TWI237332B

TWI237332B - Wafer structure

Info

Publication number: TWI237332B
Application number: TW93104546A
Authority: TW
Inventors: Chung-Hsiung Ho
Original assignee: Advanced Semiconductor Eng
Priority date: 2004-02-24
Filing date: 2004-02-24
Publication date: 2005-08-01
Also published as: TW200529331A

Abstract

A wafer structure mainly includes a substrate, a plurality of chips, a passivation layer and a plurality of reinforcing structures. Chips are disposed on the substrate and each chip has a plurality of bonding pads thereon. The passivation layer is covered on the surface of these chips, and having a plurality of openings exposing each of bonding pads respectively. In addition, the reinforcing structure is formed on the surface of these chips or bonding pads, such as a metallic material to reinforce the periphery surface of a chip or a bonding pad. Therefore, the configuration of a chip or a bonding pad can be prevented from deformation.

Description

12373321237332

發吸」所屬技術領Μ f發明是有關於一種晶圓結構，且特別是有關於一種避免晶片之形狀產生變形或銲墊之形狀產生變形之晶圓結先前技術在半^體產業中’積體電路（Integrated Circuits，主要分為三個階段··晶圓（wafer)的製造、積 ϊ電)的製作以及積體電路（ic)的封裝（packaK) ΐ 1二Γ ’裸晶片（d i e )係經由晶圓製作、電路設計、光 I ·程以及切割晶圓等步驟而完成，而每一顆由晶圓切，2形成的裸晶片，經由裸晶片上之銲墊（Bonding j )，承載l§( Carrier)電性連接，以形成一晶片封裝結構。此晶片封裝結構又可區分為：打線接合（wire 〇n ing )型態之晶片封裝結構、覆晶接合（flip chip on ing)型態之晶片封裝結構以及捲帶自動接合 automatic bonding)之晶片封裝結構等三大類。圖繪示習知一種晶圓結構及其晶片的放大示意田1二參考第1圖，晶圓10 0係由多數個晶片11 〇所構成，而曰曰圓100經由切割之後可形成多數個獨立分開之晶片。晶片110之内部具有多個主動元件（未繪示）及多層之金屬内連線層（未繪示），其依序形成於一矽 (Silicon)基材之表面上，且晶片11()之最外層表面還配置有多數個銲墊112 ,其中銲墊112藉由金屬内連線層與主動元件相電性連接。此外，請參考第2圖，其繪示第丨圖之The invention of the "Fu Su" technology belongs to a wafer structure, and in particular to a wafer structure that avoids the deformation of the shape of the wafer or the shape of the pads. The previous technology has been used in the semi-finished industry. Integrated Circuits, which are mainly divided into three stages: • Wafer (fabrication) and fabrication of integrated circuits (ICs); packaging (packaK) of integrated circuits (IC) 二 '' bare chip (die) It is completed through the steps of wafer fabrication, circuit design, optical I-process, and dicing wafer. Each bare wafer formed by wafer cutting and 2 is carried by the bonding pads (Bonding j) on the bare wafer. l§ (Carrier) is electrically connected to form a chip package structure. This chip packaging structure can be further divided into: wire packaging type wire packaging structure, flip chip on ing type wafer packaging structure, and tape automatic packaging Structure and other three categories. The figure shows a conventional wafer structure and an enlarged schematic diagram of the wafer. Referring to FIG. 1, the wafer 100 is composed of a plurality of wafers 110, and the circle 100 can be formed into a plurality of independent pieces after being cut. Separate wafers. The chip 110 has a plurality of active elements (not shown) and a plurality of metal interconnect layers (not shown), which are sequentially formed on the surface of a silicon substrate, and the wafer 11 () A plurality of bonding pads 112 are also disposed on the outermost surface, and the bonding pads 112 are electrically connected to the active device through a metal interconnect layer. In addition, please refer to Figure 2, which shows

12312TWF.PTD 第5頁 1237332 五、發明說明（2) 晶片的局部剖面圖。為避免晶片110之表面受到雜質污染以及外力的破壞，晶圓100還具有一保護層（passivation layer ) 120，其覆蓋於晶片1 10之表面上。另外，保護層 1 2 0具有多數個開口 1 2 2，分別暴露出晶片1 1 0之每一銲墊 1 1 2，其中銲墊1 1 2可作為晶片1 1 0對外電性連接一承載器 (未繪示）之接點。值得注意的是，晶片1 1 0之銲墊1 1 2的形狀係由微影 (photolithography )製程定義而成，其形狀例如為一圓形、多邊形或一四邊形，而銲墊1 1 2常受到後續熱酸洗處理而產生熱變形，使得銲墊112之邊緣或形狀產生扭曲變形、或不規則變形等缺陷。此外，獨立分開之晶片1 1 0也會在後續高溫處理的步驟中而產生熱變形，使得晶片1 1 〇之邊緣或形狀同樣產生扭曲變形、或不規則變形等缺陷。一旦晶片或銲墊的形狀產生變形，容易導致保護層與晶片之間或保護層與銲墊之間產生脫層，影響晶片的可靠度。此外，保護層之開口的形狀產生變形時，對於後績凸塊長成的形狀影響很大，若相鄰之兩凸塊因變形而相互接觸時，則會造成訊號短路。發明内容因此，本發明的目的就是在提供一種晶圓結構，具有強化結構，其形成於晶片之表面或銲墊之表面上，以強化晶片以及銲墊之結構。本發明的另一目的就是在提供一種晶圓結構，具有強化結構，其形成於保護層之開口的周圍表面上，以強化開12312TWF.PTD Page 5 1237332 V. Description of the invention (2) Partial sectional view of the wafer. In order to prevent the surface of the wafer 110 from being contaminated by impurities and damaged by external forces, the wafer 100 further has a passivation layer 120 covering the surface of the wafer 110. In addition, the protective layer 12 has a plurality of openings 1 2 2 to expose each of the bonding pads 1 1 2 of the wafer 1 10 respectively, wherein the bonding pads 1 12 can be used as the wafer 1 1 10 to electrically connect a carrier to the outside. (Not shown) contacts. It is worth noting that the shape of the pads 1 2 of the wafer 1 10 is defined by the photolithography process, and the shape is, for example, a circle, a polygon, or a quadrangle, and the pads 1 1 2 are often subjected to Subsequent thermal pickling treatment causes thermal deformation, which causes defects such as distortion or irregular deformation of the edges or shapes of the pads 112. In addition, the separately separated wafer 1 10 will also be thermally deformed in the subsequent high temperature processing step, so that the edges or shape of the wafer 1 10 will also have defects such as distortion or irregular deformation. Once the shape of the wafer or pad is deformed, it is easy to cause delamination between the protective layer and the wafer or between the protective layer and the pad, which affects the reliability of the wafer. In addition, when the shape of the opening of the protective layer is deformed, it has a great influence on the shape of the subsequent bumps. If two adjacent bumps contact each other due to deformation, it will cause a short circuit. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a wafer structure having a reinforcing structure formed on a surface of a wafer or a surface of a pad to strengthen the structure of the wafer and the pad. Another object of the present invention is to provide a wafer structure with a reinforced structure, which is formed on the surrounding surface of the opening of the protective layer to strengthen the opening.

12312TWF.PTD 第6頁 1237332 五、發明說明（3) 口之結構。本發明的另一目的就是在提供一種晶圓結構，具有強化結構，其形成於保護層之表面上，以強化晶片之結構。為達本發明之上述目的，本發明提出一種晶圓結構，主要係由一基材、多數個晶片、一保護層以及多數個強化結構所構成。晶片配置於基材上，而晶片之表面配置有多數個銲墊。保護層覆蓋於這些晶片之表面上，而保護層具有多數個開口，分別暴露出每一銲墊。此外，強化結構係形成於晶片之表面上或銲墊之表面上，以避免晶片之形狀或銲墊之形狀產生變形。為達本發明之上述目的，本發明提出一種晶圓結構，主要係由一基材、多數個晶片、一保護層以及多數個強化結構所構成。晶片配置於基材上，而晶片之表面配置有多數個銲墊。保護層覆蓋於這些晶片之表面上，而保護層具有多數個開口，分別暴露出每一銲墊。此外，強化結構係、 “形成於保護詹之開口的周圍表面上，以避免開口之形狀產生變形。依照本發明的一實施例所述，上述之強化結構例如為多數個凸狀物，其突起於晶片之周圍表面或銲墊之周圍表面上，且強化結構的材質例如為金屬。此外，在另一實施例中，強化結構的材質與保護層之材質相同，而強化結構例如為多數個凸狀物或多數個凹狀物，其突出或凹陷於保護層之表面。，本發明因採用強化結構於每一晶片之周圍表面，以確12312TWF.PTD Page 6 1237332 V. Description of the invention (3) Structure of mouth. Another object of the present invention is to provide a wafer structure with a reinforced structure, which is formed on the surface of the protective layer to strengthen the structure of the wafer. To achieve the above object of the present invention, the present invention provides a wafer structure, which is mainly composed of a substrate, a plurality of wafers, a protective layer, and a plurality of reinforced structures. The wafer is disposed on a substrate, and the surface of the wafer is provided with a plurality of pads. A protective layer covers the surface of these wafers, and the protective layer has a plurality of openings, each of which exposes each pad. In addition, the reinforcement structure is formed on the surface of the wafer or on the surface of the pad to avoid deformation of the shape of the wafer or the shape of the pad. To achieve the above object of the present invention, the present invention provides a wafer structure, which is mainly composed of a substrate, a plurality of wafers, a protective layer, and a plurality of reinforced structures. The wafer is disposed on a substrate, and the surface of the wafer is provided with a plurality of pads. A protective layer covers the surface of these wafers, and the protective layer has a plurality of openings, each of which exposes each pad. In addition, the reinforcing structure is “formed on the surrounding surface of the opening to protect Zhan ’s opening to prevent the shape of the opening from being deformed. According to an embodiment of the present invention, the above-mentioned reinforcing structure is, for example, a plurality of protrusions with protrusions. The material on the surrounding surface of the wafer or the surrounding surface of the bonding pad is, for example, a metal. In addition, in another embodiment, the material of the reinforcing structure is the same as that of the protective layer, and the reinforcing structure is, for example, a plurality of protrusions. Or a plurality of recesses, which protrude or recess on the surface of the protective layer. The present invention uses a reinforced structure on the surface of each wafer to ensure that

12312TWF.PTD 第7頁 1237332 五、發明說明（4) 保晶片之邊變形〇此外銲墊之邊緣形〇另外上以確保而產生熱變為讓本顯易懂 > 下細說明如下實施方式第复 —ϋ 施例生熱變圍表面的影響 =3圖繪示本發明第一實施例之一種晶圓結片的放大示意®。請參考第3圖，晶圓2〇〇稱及其曰曰 210以及浴-、 Q 百多數個晶片 ^A ( )，而晶圓200經由切割之後可形成多數個獨立分開之晶片210。基材例如為矽後了^ 基材’而晶片2"1 0之内部具有多個主動元件’未 _ c 0 n 多層之金屬内連線層（未繪示），其依序形//基y及面上，且晶片210之最外層表面還配置有多數個'鋒^塾其中銲墊2 12藉由金屬内連線層與主動元件相電性 ’ 此外明參考苐3圖之晶片的放大示意圖。為避免晶之表面受到雜質污染以及外力的破壞，晶圓2〇〇還=一保護層2 2 0，其覆蓋於晶片2 1 0之表面上。另外，保護/ 2 2 0具有多數個開口 2 2 2，分別暴露出晶片2 1 〇之每二曰 2 1 2 ’其中銲墊2 1 2可作為晶片2 1 0對外電性連接一承載器 1237332 五、發明說明（5) (未緣示）之接點。請參考第3圖，在晶片2 1 0之保護層2 2 0上，每一晶片 2 1 0上可分別形成一強化結構2 3 0，以避免晶片2 1 0在後續高溫處理的步驟中產生熱變形。此強化結構230之材質例如為金屬或與保護層2 2 0相同之材質，其可利用微影蝕刻的技術形成多數個凸狀物（或凹狀物）230a、230b、 230c、230d於每一晶片210之周圍表面上。此凸狀物（凹狀物）230a、230b、230c、230d例如為一直角邊框，對應位於晶片210之四個角落區域214上，用以強化晶片210之結構。此外，四個凸狀物（或凹陷物）230a、230b、 230c、230d (或數量更多）亦可全部相連而形成一環形凸環，或部分相連以形成一半環形凸環，其環繞於晶片2 1 0 之周圍表面，用以強化晶片2 1 0之結構。當然，強化結構 230之數量或形狀可依照晶片210之形狀而改變。請參考第3A圖，其繪示另一種強化結構的示意圖。在 ‘本實施例中，〜费1匕，結構的材質亦可'與銲墊242之材質相同，其可利用微影蝕刻的技術同時定義出一環狀凸環244 (或環狀排列的凸狀物）與這些銲塾242，而環狀凸環244 環繞於晶片240的周圍表面，且被保護層250覆蓋著，用以強化晶片2 4 0之結構。此外，保護層2 5 0還具有多數個開口 2 5 2，分別暴露其所對應之銲墊242。第二實施例請參考第4綠示本發明第二實施例之一種晶圓結構，其具有強化結構之銲墊的俯視示意圖。晶片3丨〇之表面配12312TWF.PTD Page 7 1233332 V. Description of the invention (4) Keep the edge of the wafer deformed 〇 In addition, the edge shape of the solder pad 〇 In addition, the heat generated to ensure that this display is easy to understand > The following detailed description of the following embodiment Complex—ϋ The influence of the heat-generating surrounding surface in the example = 3 shows an enlarged schematic diagram of a wafer die according to the first embodiment of the present invention. Please refer to FIG. 3, the wafer 200 is called 210, and the number of wafers is 100, and the wafer 200 can be formed into a plurality of independently separated wafers 210 after dicing. The substrate is, for example, a silicon substrate ^ substrate ', and the chip 2 " 1 0 has multiple active elements inside it; __c 0 n multilayer metal interconnect layers (not shown), which are sequentially shaped / based y and the surface, and the outermost surface of the chip 210 is also provided with a plurality of 'fronts ^ 塾 Among them, the pad 2 12 is electrically connected to the active component through the metal interconnect layer'. Also refer to the enlargement of the wafer shown in Figure 3 schematic diagram. In order to prevent the surface of the crystal from being contaminated by impurities and damaged by external forces, the wafer 2000 also has a protective layer 2 2 0 that covers the surface of the wafer 2 10. In addition, the protection / 2 2 0 has a plurality of openings 2 2 2, each of which exposes the wafer 2 1 2 each 2 1 2 ′, wherein the bonding pad 2 1 2 can be used as the wafer 2 1 0 to electrically connect to a carrier 1233332. Fifth, the description of the invention (5) (not shown) contacts. Please refer to FIG. 3, on the protective layer 2 2 0 of the wafer 2 10, a strengthening structure 2 3 0 can be formed on each wafer 2 10 separately to avoid the occurrence of the wafer 2 1 0 in the subsequent high-temperature processing step. Thermal deformation. The material of the reinforcing structure 230 is, for example, metal or the same material as the protective layer 2 2 0. It can use a photolithographic etching technique to form a plurality of convex objects (or concave objects) 230a, 230b, 230c, 230d in each On the surrounding surface of the wafer 210. The convex objects (concave objects) 230a, 230b, 230c, and 230d are, for example, rectangular frames, correspondingly located on the four corner regions 214 of the wafer 210 to strengthen the structure of the wafer 210. In addition, the four protrusions (or depressions) 230a, 230b, 230c, 230d (or more) can also be all connected to form an annular convex ring, or partly connected to form a half annular convex ring, which surrounds the wafer The surrounding surface of 2 1 0 is used to strengthen the structure of the wafer 2 1 0. Of course, the number or shape of the reinforcing structures 230 may be changed according to the shape of the wafer 210. Please refer to FIG. 3A, which illustrates a schematic diagram of another reinforced structure. In the present embodiment, the material of the structure can be the same as that of the welding pad 242. The lithographic etching technology can be used to simultaneously define a ring-shaped convex ring 244 (or a ring-shaped convex ring). Objects) and these solder pads 242, and the annular convex ring 244 surrounds the peripheral surface of the wafer 240 and is covered by the protective layer 250 to strengthen the structure of the wafer 240. In addition, the protective layer 2 50 also has a plurality of openings 2 5 2, which respectively expose corresponding pads 242. Second Embodiment Please refer to the fourth green diagram of a wafer structure according to a second embodiment of the present invention, a schematic plan view of a pad having a reinforced structure. Surface matching of wafer 3 丨〇

12312TWF.PTD 第9頁 1237332 五、發明說明（6) 置有多個銲墊312 (僅繪示其一），而晶片310之表面還形成一保護層320，且保護層320具有多數個開口 322 (僅繪示其一），分別暴露每一銲墊3 1 2。此外，強化結構3 3 0可位於銲墊31 2之開口 3 2 2内部，以避免銲墊31 2在後續熱酸洗處理的步驟中產生熱變形。此強化結構3 3 0之材質例如為金屬，其可利用微影蝕刻的技術形成多數個凸狀物（或12312TWF.PTD Page 9 1233332 5. Description of the invention (6) A plurality of solder pads 312 (only one of which is shown) is disposed, and a protective layer 320 is also formed on the surface of the wafer 310, and the protective layer 320 has a plurality of openings 322 (Only one is shown), each pad 3 1 2 is exposed separately. In addition, the reinforcing structure 3 3 0 may be located inside the opening 3 2 2 of the pad 31 2 to avoid thermal deformation of the pad 31 2 in the subsequent step of hot pickling. The material of this reinforced structure 3 3 0 is, for example, metal, which can be formed into a plurality of protrusions (or

凹狀物）330a、330b、330c、330d於每一銲墊312之周圍表面上。此凸狀物（或凹狀物）330a、330b、330c、330d 例如為一直角邊框，對應位於銲墊3丨2之四個角落區域3 i 4 上’用以強化銲墊3 1 2之結構。此外，四個凸狀物3 3 0 a、 330b、330c、330d (或更多凸狀物）亦可全部相連而形成一環狀凸環（或環狀凹環），或部分相連以形成一半環狀凸環（或半環狀凹環），其環繞於銲墊312之周圍表面，用以強化銲墊3 1 2之結構。請參考第4A圖，其繪示另一種強化結構的示意圖。在本實施例中’強化結構的材質亦可與缚、墊，3 4 2之材質相 1二其I利用微影蝕刻的技術定義出一環狀凸環344 (或 ^ 於銲墊3 42的周圍表面，且暴露於保護層350之開口 3^ 2中，用以強化銲墊3 4 2之結構。Recesses) 330a, 330b, 330c, 330d on the peripheral surface of each pad 312. The convex objects (or concave objects) 330a, 330b, 330c, 330d are, for example, rectangular frames, corresponding to the four corner areas 3 i 4 of the pads 3 丨 2 to strengthen the structure of the pads 3 1 2 . In addition, the four convex objects 3 3 0 a, 330b, 330c, 330d (or more convex objects) may all be connected to form a ring-shaped convex ring (or ring-shaped concave ring), or partly connected to form a half An annular convex ring (or a semi-annular concave ring) surrounds the peripheral surface of the pad 312 to strengthen the structure of the pad 3 1 2. Please refer to FIG. 4A, which illustrates a schematic diagram of another reinforced structure. In this embodiment, the material of the reinforced structure can also be bonded to the pad. The material of 3 4 2 is the same as that of the ring. A ring convex ring 344 (or ^ The surrounding surface is exposed in the opening 3 ^ 2 of the protective layer 350 to strengthen the structure of the pad 3 4 2.

in @ I參ΐ第5圖，其繪示本發明第二實施例之另一種晶夕Γ i八具有強化結構之鮮塾的俯視示意圖。晶片4 1 0 錄1 9己置有多個多邊形之銲墊412 (僅繪示其一），而 ^ 、^周圍表面配置有多個強化結構43 0，呈環狀排且乂些強化結構4 3 0例如為頓角（大於9 〇度）邊框，in @I 参 ΐ FIG. 5 is a schematic plan view showing another crystal of the second embodiment of the present invention with a reinforced structure. The wafer 4 1 0 records 1 9 has a plurality of polygonal solder pads 412 (only one of which is shown), and ^, ^ surrounding surfaces are provided with a plurality of reinforcing structures 43 0, which are arranged in a ring shape and have some reinforcing structures 4 3 0 is, for example, a bevel (greater than 90 degrees) border,

1237332 五、發明說明（7) 其對應位於銲墊412之每一頓角414中。此外，晶片41〇之表面還形成一保護層42 0，而保護層42()具有多數個開口 42 2 (僅繪示其一），其分別暴露出每一鮮墊412。與上述之實轭例不同的是，保護層4 2 〇覆蓋於這些強化結構4 3 〇 , 但在群塾4 1 2之補強結構上’同樣可達到強化銲墊結構之目的。此外，在第5圖中，強化結構4 3 〇亦可為環狀凸環或環狀凹環，其功效同上所述，用以強化銲墊4丨2之結構。另外’請參考第5A及5B圖，其分別繪示第5圖之強化結構的局部剖面圖。強化結構係如為凸狀物43〇a，其突出於銲墊412之周圍表面，且被保護層42〇覆蓋著。其次，強化結構亦可為凹狀物430b，其凹陷於銲塾412之周圍表面，且被保護層420覆蓋著。兩者均可強化銲塾412之结構。、第三實施例請參考第6A及6B圖，其分別繪示本發明第三實施例之一種晶圓結構，其真有強化結搆之保護層的俯視圖及其局部剖面圖。晶片5 1 0之表面配置有多個銲墊5 1 2 (僅繪示其一），而晶片510之表面還形成一保護層520，且保護層 520具有多數個開口 522 (僅繪示其一），分別暴露每一銲墊5 1 2。在保護層5 2 0之開口 5 2 2的補強結構上，可分別形成一強化結構5 3 0於開口之周圍表面。此強化結構5 3 0之材質例如與保護層之材質相同，其可利用微影蝕刻的技術形成多數個凸狀物（或凹狀物）530a、530b、530c、530d於每一開口 522之周圍表面上。此凸狀物（或凹狀物）1237332 V. Description of the invention (7) It corresponds to each corner 414 of the pad 412. In addition, a protective layer 42 0 is formed on the surface of the wafer 41. The protective layer 42 () has a plurality of openings 42 2 (only one of which is shown), and each of the fresh pads 412 is exposed. Different from the actual yoke example described above, the protective layer 4 2 0 covers these reinforcing structures 4 3 0, but on the reinforcing structure of the group 4 12, the purpose of strengthening the pad structure can also be achieved. In addition, in FIG. 5, the reinforcing structure 4 3 0 may also be a ring-shaped convex ring or a ring-shaped concave ring, and its effect is the same as that described above, and is used to strengthen the structure of the pad 4 丨 2. In addition, please refer to Figs. 5A and 5B, which respectively show partial cross-sectional views of the reinforcing structure of Fig. 5. The reinforced structure is, for example, a convex object 43a, which protrudes from the surrounding surface of the pad 412, and is covered with a protective layer 42o. Secondly, the strengthening structure may also be a recess 430b, which is recessed on the surface around the welding pad 412 and is covered by the protective layer 420. Both can strengthen the structure of welding pad 412. Third Embodiment Please refer to FIGS. 6A and 6B, which respectively show a wafer structure according to a third embodiment of the present invention, a plan view of a protective layer with a reinforced structure and a partial cross-sectional view thereof. A plurality of solder pads 5 1 2 are arranged on the surface of the wafer 5 10 (only one is shown), and a protective layer 520 is also formed on the surface of the wafer 510, and the protective layer 520 has a plurality of openings 522 (only one is shown) ), Exposing each pad 5 1 2 separately. On the reinforcing structure of the opening 5 2 2 of the protective layer 5 2 0, a reinforcing structure 5 3 0 can be formed on the surrounding surface of the opening. The material of this reinforced structure 5 3 0 is, for example, the same as that of the protective layer. It can use lithography to form a plurality of convex objects (or concave objects) 530a, 530b, 530c, 530d around each opening 522. On the surface. This convex (or concave)

12312TWF.PTD 第11頁 1237332 五、發明說明（8) , 530a、530b、530c、530d例如為一直角邊框，對應位於開口 522之四個角落區域524上，用以強化開口522之結構。此外，四個凸狀物530a、530b、530c、530d (或更多凸狀物）亦可全部相連而形成一環形凸環，或部分相連以形成一半環形凸環，其環繞於開口 5 2 2之周圍表面，用以強化開口 5 2 2之結構。由以上第一、第二及第三實施例玎知，強化結構可分別位於晶片之周圍表面、銲墊之周園表面、保護層之開口的周圍表面。雖然本發明以三個較隹實施例分別描述其功效，但不限定本發明上述三個實施例係分別實施，亦可合併實施。此外，在上述三個實施例中，雖以矩形銲墊及直角邊框為例說明，然本發明之銲墊與強化結構亦可以係其他的形狀，如圓形銲墊及弧形邊框，同樣為本發明所欲保護之範圍。綜上所述，本發明之晶圓結構具有下列優點·· (1)在第一實施例中，本發明乃採用具有強化結構之晶片結構，以確保晶片之邊緣或嘗狀不易受到高溫熱處理的影響而產生熱變形。 θ ( 2 )在第二實施例中，本發明乃採用具有強化結構之銲塾結構’以確保銲墊之邊緣或形狀不易受到高酸洗處理的影響而產生熱變形。 ’ (3 )在第二實施例中，本發明乃採用具有強化結構士開口結構，以確保保護層之開口的邊緣或形狀不易受到高溫熱處理的影響而產生熱變形。雖然本發明已以一較佳實施例揭露如上，然其並非用12312TWF.PTD Page 11 1237332 V. Description of the Invention (8), 530a, 530b, 530c, 530d are, for example, rectangular frames, correspondingly located on the four corner areas 524 of the opening 522 to strengthen the structure of the opening 522. In addition, the four protrusions 530a, 530b, 530c, and 530d (or more protrusions) may be all connected to form a ring-shaped convex ring, or partly connected to form a half-ring-shaped convex ring, which surrounds the opening 5 2 2 The surrounding surface is used to strengthen the structure of the opening 5 2 2. From the above first, second, and third embodiments, it is known that the reinforcing structure can be located on the peripheral surface of the wafer, the peripheral surface of the pad, and the peripheral surface of the opening of the protective layer, respectively. Although the present invention will be described in terms of its effectiveness with three comparative embodiments, it is not limited that the above three embodiments of the present invention are implemented separately, and may be implemented in combination. In addition, in the above three embodiments, although rectangular pads and right-angled frames are used as examples, the pads and reinforced structures of the present invention can also be other shapes, such as circular pads and curved frames. The scope of the present invention. In summary, the wafer structure of the present invention has the following advantages. (1) In the first embodiment, the present invention uses a wafer structure with a reinforced structure to ensure that the edges or shapes of the wafer are not easily subjected to high temperature heat treatment. Influence and cause thermal deformation. θ (2) In the second embodiment, the present invention uses a welding pad structure with a reinforced structure to ensure that the edges or shapes of the pads are not easily affected by the high pickling treatment and cause thermal deformation. (3) In the second embodiment, the present invention adopts a reinforced structure and an opening structure to ensure that the edge or shape of the opening of the protective layer is not easily affected by the high temperature heat treatment to cause thermal deformation. Although the present invention has been disclosed above with a preferred embodiment, it is not

12312TWF.PTD 第12頁 1237332 五、發明說明（9) 以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。12312TWF.PTD Page 121237332 V. Description of the invention (9) To limit the present invention, anyone skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention, so the protection of the present invention The scope shall be determined by the scope of the attached patent application.

12312TWF.PTD 第13頁 1237332 意示大放的片晶其及構結圓晶 ,ίι 種一知習示繪圖明 1 說第單簡式圖圖第明發第本示示繪繪圖圖 2 3 第第圖面剖部局的片晶之圖晶其及構結圓晶種一之例施實的意片.示 , 有構具 - y圖另f意一二示： Ϊ Λ例。明沲結 ϋ ί 圓泰墊、一視第 a示J第俯！明會之月的繪發；構；塾別。本W結W銲分圖示化之圖 t ^ h強一!構s s Μ 有^ ί 大3 。4具5化5A 放第圖第其第強第的構結化強種結 {DlgJ 晶種二之例其構結圓晶種面剖 P 立口局的構結化強之圖圖圓面晶剖_ S «部一局之其例及施圖實視三俯第的明層發護本保示之繪構別結分化圖強· 6B有及具 6A其第，構。結圖說示標式圖 ίι ί VI ίι f /fc 11 11 2 2 11 lx 11 11 晶晶銲保開晶明 ίβ圓片塾護口圓層片晶12312TWF.PTD Page 13 1233332 Shows the large-scale tablet crystal and its structured round crystal, a kind of knowledge, drawing, and illustration. Figure 1 In the drawing, the slice crystals and the structure of the round crystal seed are shown in the example of the actual implementation. It shows that there is a structure-y and another f shows one or two: 例 Λ example. Ming 沲 ϋ ϋ Round Thai pad, first look at the first show J first look! Painting of the Moon of the Ming Dynasty; structure; farewell. This graphical representation of the W junction and W welding points t ^ h is strong! Structure s Μ 有 ^ 3. Four 5A and 5A structures with the strongest structure and strong seed structure {DlgJ example of seed two, the structure of the round seed surface profile P, the structure of the strong structure of the vertical opening, the round surface crystal Section _ S «Examples of the Ministry and the First Bureau and the actual structure of the bright layer hair protection and protection shown in Figure 3 are different. Figure 6B has 6A and 6A. Illustrate and show the standard format ίι ί VI ί f / fc 11 11 2 2 11 lx 11 11

ii

12312TWF.PTD 第14頁 1237332 圖式簡單說明 212、24 2 :銲墊 214 :角落區域 2 2 0、2 5 0 : <保護層 2 2 2、2 5 2 :開口 2 3 0 :強化結構 230a、230b、230c、230d :凸狀物（或凹狀物） 244:環狀凸環（或環狀凹環） 3 1 0 、3 4 0 ··晶片 312 、 342 :銲墊 3 1 4 :角落區域 3 2 0、3 5 0 :保護層 3 2 2、3 5 2 ··開口 3 3 0 :強化結構 330a、330b、330c、330d :凸狀物（或凹狀物） 344 :環狀凸環（或環狀凹環） 4 1 0 :晶片 4 1 2 :銲墊 414 :頓角 4 2 0 :保護層 4 2 2 :開口 4 3 0 :強化結構 4 3 0 a :凸狀物 4 3 0 b :凹狀物 5 1 0 ·晶片12312TWF.PTD Page 14 1233332 Brief description of the drawings 212, 24 2: Pad 214: Corner area 2 2 0, 2 5 0: < Protective layer 2 2 2, 2 5 2: Opening 2 3 0: Strengthened structure 230a , 230b, 230c, 230d: convex (or concave) 244: annular convex ring (or annular concave ring) 3 1 0, 3 4 0 · · wafer 312, 342: pad 3 1 4: corner Area 3 2 0, 3 5 0: protective layer 3 2 2, 3 5 2 ·· opening 3 3 0: reinforced structure 330a, 330b, 330c, 330d: convex (or concave) 344: annular convex ring (Or ring-shaped concave ring) 4 1 0: wafer 4 1 2: pad 414: corner 4 2 0: protective layer 4 2 2: opening 4 3 0: reinforced structure 4 3 0 a: convex 4 3 0 b: concave 5 1 0

12312TWF.PTD 第15頁 1237332 圖式簡單說明 512 銲墊 514 角落區域 520 保護層 522 開 530 強化結構 5 3 0a 、5 3 0b 、5 530d :凸狀物（或凹狀物）12312TWF.PTD Page 15 1237332 Brief description of the drawing 512 Pad 514 Corner area 520 Protective layer 522 Open 530 Strengthening structure 5 3 0a, 5 3 0b, 5 530d: convex (or concave)

12312TWF.PTD 第16頁12312TWF.PTD Page 16

Claims

1237332 VI. Scope of patent application 1. A wafer structure including at least: a wafer composed of a plurality of wafers, the surfaces of which are provided with a plurality of bonding pads; and a plurality of reinforced structures formed respectively on the wafers The peripheral surface of the wafer 02. The wafer structure described in item 1 of the patent application scope further includes a protective layer covering the wafers and the reinforced structures, and the protective layer has a plurality of openings, respectively, exposing the These pads. 3. The wafer structure according to item 1 of the scope of the patent application, wherein each of the reinforced structures has a plurality of protrusions, arranged in a ring shape, and respectively protrudes from a corner area of each of the wafers. 4. The wafer structure described in item 1 of the scope of the patent application, wherein each of the reinforced structures has a plurality of recesses, arranged in a ring shape, and recessed in a corner area of each of the wafers, respectively. 5. The wafer structure according to item 1 of the scope of patent application, wherein the reinforced structures are one of a ring-shaped concave ring and a ring-shaped convex ring. 6. The wafer structure described in item 1 of the scope of patent application, wherein the material of the reinforced structures is a metal. 7 · The wafer structure according to item 6 of the scope of patent application, wherein the materials of the reinforced structures are the same as those of the pads. 8. A wafer structure including at least: a wafer composed of a plurality of wafers, the surfaces of which are provided with a plurality of wafers; a protective layer covering the wafers, and the protective layer having a plurality of wafers

12312TWF.PTD Page 17 1237332 VI. Scope of patent application The openings expose the solder pads respectively; and a plurality of reinforced structures are located on the protective layer and formed on the peripheral surfaces of the wafers. 9. The wafer structure according to item 8 of the scope of patent application, wherein each of the reinforced structures has a plurality of protrusions, arranged in a ring shape, and each protrudes on the surface of the protective layer. 10. The wafer structure according to item 8 of the scope of patent application, wherein each of the reinforced structures has a plurality of recesses, arranged in a ring shape, and recessed on the surface of the protective layer, respectively. 1 1. The wafer structure according to item 8 of the scope of patent application, wherein the reinforced structures are one of a ring-shaped concave ring and a ring-shaped convex ring. 1 2. The wafer structure according to item 8 of the scope of patent application, wherein the material of the reinforced structures is a metal. 13. The wafer structure according to item 8 of the scope of patent application, wherein the material of the reinforced structures is the same as that of the protective layer. 14. A wafer structure comprising at least: a wafer composed of a plurality of wafers, a plurality of pads are disposed on the surfaces of the wafers; a protective layer covering the wafers, and the protective layer has a plurality of openings , Respectively, the pads are exposed; and a plurality of reinforcing structures are respectively formed on the peripheral surfaces of the openings of the protective layer. 1 5. The wafer structure as described in item 14 of the scope of patent application, wherein each of these reinforced structures has a plurality of convex objects, which are arranged in a ring shape in the protection structure.

12312TWF.PTD Page 18 1237332 VI. Scope of patent application The protective layer is protruded from the surrounding surface of the openings of the protective layer. 16. The wafer structure according to item 14 of the scope of the patent application, wherein each of the reinforced structures has a plurality of recesses, which are arranged in a ring shape on the protective layer and are respectively recessed in the protective layer. The surrounding surfaces of the openings. 1 7. The wafer structure according to item 14 of the scope of patent application, wherein the reinforced structures are one of a ring-shaped concave ring and a ring-shaped convex ring. 1 8. The wafer structure according to item 14 of the scope of patent application, wherein the material of the reinforced structures is a metal. 19. The wafer structure according to item 14 of the scope of patent application, wherein the materials of the reinforced structures are the same as the material of the protective layer. 20 · The wafer structure according to item 14 of the scope of patent application, wherein the reinforced structures are arranged on the pads and are not exposed to the corresponding openings. 2 h The wafer structure according to item 14 of the scope of the patent application, wherein the reinforced structures are arranged on the pads and exposed to the corresponding openings.

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