TWI236164B - Nitride device and method for manufacturing the same - Google Patents

Abstract

A nitride device and a method for manufacturing the same are disclosed. The present invention comprises the following steps. First, provide a substrate, and locate a buffer layer on the substrate. Next, locate an undoped GaN layer on the buffer layer. Then, locate a semiconductor epitaxial structure on the undoped GaN layer. Finally, form a P<+>-GaN layer on the semiconductor epitaxial structure, wherein UDMHy or organic metal with N are used as the source of N, and hydrogen or the mix of nitrogen and hydrogen are used as the carrier gas.

Description

1236164 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a nitride, an organometallic chemical gas and a method for manufacturing the same, especially a nitride element. Pre-porous phase> formed by MOCVD [prior art] A semiconductor light-emitting element, such as

Diode; LED), which is made of a semiconductor material body (Li "t EmiUing, which can convert electrical energy into light energy, n, and n kilograms, made of conductive light-emitting elements not only the body i: 之; = state light source. By ☆ This feature of κ is fast, shock-resistant, and has a long life.] The driving voltage is low, and the response rate is thin, short, and small. Therefore, it is compatible with various applications and light and sub-products. It has become quite popular in daily life. The focus of the report is on light-emitting elements made of nitrogen, gallium nitride, gallium nitride, GaN), and two or two nitride light-emitting elements. Most of these U-shine conductors are grown on non-lightning boards, and other light-emitting components use conductive ^ apphire) -based gem substrates as an insulator, ... Trouble in blue Therefore, the electrodes were fabricated from electrodes of 0 t, 彳, and ^ g i. The conductor layers are individually contacted ’to complete the production of such and n-type + luminescence-techniques. When the crystals of osmium nitride semiconductor materials are crystallized, the hydrogen atom = foot = dopant, but most of the dopants will be purified by radon. Therefore, the nitride lice compound first polar body must be made in the living environment after the completion of the production of 1236164 V. Description of the invention (2) 'doped thermal method of the conductive material to be activated, after a period of repetition, thereby reducing the After the conventional fabrication, the disadvantage of this method is that the gallium nitride is from 400C to 10000C from high impedance. The other method is to switch to nitrogen gas. The non-conducting nitrogen of gallium needs to be controlled to reduce the temperature and change the temperature. The tempering (Annealing) step ’is used to increase the nitriding concentration. -Generally, through the addition annealing step of high temperature furnace tube, microwave oven, etc. 'After the light-emitting diode is placed in time, the atoms in the material will enter. After the law system is completed, the epitaxial machine is taken out, and the epitaxial wafer is put into a bipolar junction, and then tempered in a nitrogen environment, and the gallium nitride heated by the furnace becomes a low impedance ρ When the type Mg is mixed with grains, an additional tempering must be added. After the epitaxial growth is completed, the gas in the growth cavity is equal to eight and the cooling rate is controlled so that the magnesium is doped with gallium. It becomes conductive P-type gallium nitride. Its disadvantages are ratification, and the long temperature of A in the long cavity will mean that it is difficult to control accurately. [Summary of the Invention] Another object of the present invention is to provide a nitride element and a method to increase the stability of mass production. / According to the above object of the present invention, a nitride element is proposed. Therefore, the objective method of the present invention can omit the other objective method of the present invention. What does not need to control the temperature reduction is to provide a fire step. Is to provide a speed, can directly plant nitride elements and nitride elements and their cooling. Manufacturing method Manufacturing method package 1236164 V. Description of the invention (3) ~ ^-Including two: Ϊ Ϊ, a buffer layer is located on the substrate, an undoped nitride is located on the buffer layer, and a semiconductor epitaxial structure is located The undoped nitrogen layer and a high-concentration gallium nitride layer are located in the semiconductor epitaxial junction. According to a preferred embodiment of the present invention, the material of the substrate is transparent buffer: the material is gallium nitride 'and the nitride The element is preferably a hair: element such as a light-polar body. In addition, the high-concentration gallium nitride layer may be of a p-type, and its thickness is preferably from 100 to 800 A, more preferably from 50 A. According to another purpose, a nitride device is proposed as follows. First, a substrate is provided, and then a plate is formed. Next, the formation of an undoped gallium nitride layer is performed here: the formation of the semiconductor epitaxial structure is undoped with nitride. m forms a high-concentration gallium nitride layer at the time of this semiconductor epitaxial structure # ίThe formation of this high-concentration gallium nitride layer on the semiconductor structure is based on the use of unsymmetric mihydrazine (uDMHy) Or the contained organic metal is used as: = 纟, source, and the use of hydrogen or a mixture of nitrogen and hydrogen as the carrier gas and the mixture of lice rolling can be 1 to 2 〇 ...... Invention comparison The best implementation is {row, the material of the substrate is a transparent sapphire such as a light-emitting diode, etc., and the thickness of the high-concentration gas is preferably 100 A to 800 A, and more preferably 500 A. Layered gallium structure stone, pieces, and square buffer structure

1236164 V. Description of the invention (4) ~~ One [Embodiment] The present invention discloses a nitride element and a method for manufacturing the same, on a P-type gallium vaporized layer 'by using dimethyl hydrazine or a nitrogen-containing organic The metal is ammonia (NH3) to grow a high-concentration p-type gallium nitride layer. This article and its manufacturing method do not need to be tempered, and can directly reduce the stability of mass production. In order to make the description of the present invention more detailed and complete, reference may be made to the following descriptions and the illustrations in FIGS. 1 to 4. Please refer to FIG. 1. FIG. 1 is a cross-sectional view of a p-type GaN according to a preferred embodiment of the present invention. When manufacturing the p-type gallium nitride of the present invention, a substrate 100 is first provided, wherein the substrate 100 is preferably a transparent material, and the material of the substrate 100 may be an oxide inscription (A 1 200, and more preferably Sapphire. Next, the substrate 100 is subjected to a thermal cleaning step in the inverse cavity. This w cleaning step may preferably be performed in a hydrogen (L) environment at a temperature of 110 (rc) to clean the substrate 1 00. After the thermal washing step of the substrate i 00 is completed, the temperature is reduced to 500 ct by a method such as low-temperature organometallic chemical vapor deposition, and the growth buffer layer 102 is covered on the substrate 100, wherein the buffer layer 102 The material is better. Next, the temperature is increased to 105 ° C, and an undoped gallium nitride layer is grown = overlying the buffer layer 102, and then a "type gallium nitride layer 106" is overlaid on the substrate. On the gallium layer 104. The thickness of this undoped gallium nitride layer 丨 Q4 = good = 1 / / m, and the n-type gallium nitride layer i 06 is preferably silicon-doped, n-type The thickness of the gallium layer 106 is preferably 2 // m. When the n-type gallium nitride layer 丄 06 is formed, a fiber-growth multiple quantum well (Multl Quant㈣, MQW) light-emitting layer 1 is formed. 8. Next, P-type aluminum gallium nitride growth layer U0 on the multiple quantum well light emitting layer Shu 〇8, where such p-type aluminum gallium nitride layer is preferred 11〇

Page 10 1236164 V. Description of the invention (5) Magnesium doping, and the thickness of the p-type aluminum gallium nitride layer 1 1 0 may be 2000 A. Then, a p-type gallium nitride layer 1 12 is grown on the p-type aluminum gallium nitride layer 1 丨, wherein the p-type gallium nitride layer 1 12 is preferably doped with magnesium, and the p-type gallium nitride layer / 丨 '2 The thickness may preferably be 0.2 // m. Finally, a high-concentration gallium nitride layer (p-GaN) 114 is grown on the p-type gallium nitride layer 1 12 as a contact layer, and the thickness thereof is 100 A to 100 A. 8 0 0 A, and a thickness of 5 0 A is more preferred. When growing this high-concentration gallium nitride layer 114, dimethyl hydrazine is used instead of ammonia as the source of &amp; and the carrier gas can be hydrogen or a mixed basin of nitrogen and hydrogen. For 1 to 2. "/

Next, take out the grown wafer and take it out of the reaction chamber, without going through the tempering step, and directly make the crystal grains. First use inductively coupled plasma (I ^ c ^ ctive Coupled Plasma · 'ICP) etching technology to remove some high-concentration gallium nitride layers 丨 4, some p-type GaN layers 丨 丨 2, Part of the P-type aluminum gallium nitride nitride layer 110 and part of the multiple quantum well light emitting layer 108,

^ Until the exposed portion of the n-type GaN layer 106. Subsequently, a 1 1 f electrode layer 1 1 6 ′ is formed on the high-concentration gallium nitride layer ιΐ 4 by using, for example, an EVaporation method, and a contact current J is formed on a part of the transparent electrode layer 1 1 6 and A contact electrode 120 is formed on a part of the n-type GaN layer 106, and P is made into the whole light-emitting diode, as shown in FIG. 2. Among them, the transparent electrode 116 and the contact electrode 118 preferably have a nickel (Ni) / gold (Au) structure, and the branch moxibustion electrode 1 2 0 preferably has a titanium (τ 丨) / aluminum / nickel / gold structure. Consider Figure 3, which shows the use of different gases as the carrier gas and nitrogen atoms.

Page 11 1236164 V. Description of the invention (6) Source, the result of growing a high-concentration gallium nitride layer. Sample A uses ammonia as the source of nitrogen atoms to grow a high-concentration gallium nitride layer; Sample B uses dimethyl hydrazine instead of ammonia as the source of nitrogen atoms, where the carrier gas is hydrogen; sample C is used Dimethyl hydrazine replaces ammonia as the source of nitrogen atoms. The carrier gas is a mixed gas of nitrogen and hydrogen. The ratio is 1: 1. In the grain process, sample A must go through the tempering step first, and samples B and C need not go through the tempering step. Comparing these three samples, it can be found that the results of the three are similar, so the method of manufacturing the nitride element of the present invention can indeed save the tempering step. Please refer to FIG. 4 again, which shows the use of dimethyl hydrazine versus the working voltage of the light emitting diode (V f) when using dimethyl hydrazine instead of ammonia to grow a high-concentration gallium nitride layer. ). As shown in the figure, when the amount of dimethyl hydrazine used is too small, the working voltage of the light-emitting diode will be high, and when the amount of dimethyl hydrazine is increased to more than 2 0 0 0 sccm, the light will be emitted. The working voltage of the diode can be reduced to 3.1 V, so the method for manufacturing a nitride element of the present invention can provide a high-brightness, high-quality light-emitting diode. As can be seen from the above-mentioned preferred embodiments of the present invention, the application of the present invention has the following advantages. First, when growing a high-concentration gallium nitride layer, the carrier gas in the reaction chamber can be hydrogen or a mixture of nitrogen and hydrogen. Therefore, after the high-concentration gallium nitride layer is grown, the magnesium atoms and the The source of gallium atoms does not need to switch all the carrier gas to nitrogen. Second, the use of dimethyl hydrazine instead of ammonia can reduce the probability of the combination of magnesium atoms and hydrogen atoms. Therefore, the tempering step can be omitted for the epitaxial wafer, and the temperature can be directly reduced without controlling the cooling rate. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to be limited thereto.

Page 12 1236164

Page 1236164 Brief description of the drawings [Simplified description of the drawings] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings, The detailed description is as follows: FIG. 1 is a cross-sectional view showing a p-type gallium nitride according to a preferred embodiment of the present invention. Fig. 2 is a sectional view showing a light emitting diode according to a preferred embodiment of the present invention. Figure 3 shows the results of using different gases as the source of the carrier gas and nitrogen atoms to grow the nitrided layer with a local concentration. Figure 4 is a graph showing the effect of the amount of difluorenyl hydrazine on the operating voltage (Vf) of the light-emitting diode when using difluorenyl hydrazine instead of ammonia to grow a high-concentration gallium nitride layer. [Simple description of element representative symbols] 1 0 0: substrate 1 0 2: buffer layer 1 0 4: undoped gallium nitride layer 1 0 6: n-type gallium nitride layer 108: multiple quantum well light emitting layer 1 1 0: P-type aluminum gallium nitride layer 1 1 2: p-type gallium nitride layer 1 1 4: high-concentration gallium nitride layer

Page 14 1236164 Brief description of the drawings 1 1 6: Transparent electrode layer 1 1 8: Contact electrode 1 2 0: Contact electrode 1111 Page 15

Claims (1)

1236164 6. Scope of patent application 1. A nitride device including at least: a substrate; a buffer layer on the substrate; an undoped gallium nitride (G a N) layer on the buffer layer; a semiconductor epitaxial The structure is located on the undoped gallium nitride layer; and a high concentration gallium nitride layer is located on the semiconductor epitaxial structure. 2. The nitride element according to item 1 of the scope of patent application, wherein the substrate is a transparent substrate. 3. The nitride element according to item 1 of the scope of patent application, wherein the material of the substrate is alumina (A 1 20 3). 4. The nitride element according to item 1 of the scope of patent application, wherein the material of the substrate is sapphire. 5. The nitride device according to item 1 of the scope of patent application, wherein the material of the buffer layer is nitrided. 6. The nitride element according to item 1 of the scope of the patent application, wherein the semiconductor epitaxial structure includes at least one of the following stacked sequentially: an n-type gallium nitride layer on the undoped gallium nitride layer; a multiple A quantum well (MQW) light-emitting layer is located on the n-type nitrided layer; a p-type gallium nitride (A 1 G a N) layer is located on the multiple quantum well light-emitting layer; Page 16 1236164 6. Scope of Patent Application and A P-type GaN layer is located on the P-type aluminum gallium nitride layer. 7. The nitride device according to item 1 of the scope of patent application, wherein the high-concentration gallium nitride layer is p-type. 8. The nitride device according to item 1 of the scope of patent application, wherein the thickness of the high-concentration gallium nitride layer is preferably 100 A to 800 A. 9. The nitride device according to item 1 of the scope of patent application, wherein the thickness of the high-concentration gallium nitride layer is more preferably 500 A. 10. A method for manufacturing a nitride device, at least comprising: providing a substrate; forming a buffer layer on the substrate; forming an undoped gallium nitride layer on the buffer layer; forming a semiconductor epitaxial structure on Forming an undoped gallium nitride layer on the undoped gallium nitride layer; 11. The method for manufacturing a nitride device according to item 10 of the scope of the patent application, wherein the step of forming a high-concentration gallium nitride layer on the semiconductor epitaxial structure uses dimethylhydrazine (Unsymmetric Dimethylhydrazine) UDMHy) as a source of nitrogen atoms. Page 17 1236164 VI. Patent Application Range 1 2 _ The method for manufacturing a nitride device as described in Item 10 of the patent application range, wherein the step of forming a high-concentration gallium nitride layer on the semiconductor epitaxial structure The system uses a nitrogen-containing organic metal as a source of nitrogen atoms. 1 3. The method for manufacturing a nitride device as described in item 10 of the scope of patent application, wherein the step of forming a high-concentration gallium nitride layer on the semiconductor epitaxial structure uses hydrogen as a carrier gas. 14. The method for manufacturing a nitride device according to item 10 of the scope of the patent application, wherein the step of forming a high-concentration gallium nitride layer on the semiconductor epitaxial structure uses a mixed gas of nitrogen and hydrogen as Carrier gas. 1 5 · The method for manufacturing a nitride element as described in item 14 of the scope of the patent application, wherein the ratio of the mixed gas of nitrogen and hydrogen may be 1 to 2. 16. The method for manufacturing a nitride element as described in item 10 of the scope of patent application, wherein the material of the substrate is alumina (A 1 20 3). 1 7. The method for manufacturing a nitride element as described in item 10 of the scope of patent application, wherein the material of the substrate is sapphire. 1 8. The method for manufacturing a nitride device according to item 10 of the scope of patent application, wherein the material of the buffer layer is gallium nitride. Page 18 1236164 VI. Patent application scope 19 · The method for manufacturing a nitride element as described in item 10 of the patent application scope, wherein the step of forming the semiconductor epitaxial structure includes at least: forming an n-type gallium nitride layer On the undoped gallium nitride layer; forming a multiple quantum well light emitting layer on the n-type gallium nitride layer; forming a p-type GaN gallium layer on the multiple quantum well light emitting layer; and forming a A P-type GaN layer is formed on the P-type aluminum gallium nitride layer. 20 · The method for manufacturing a nitride device as described in item 10 of the scope of patent application, wherein the high-concentration gallium nitride layer is of a p-type. 21. The method for manufacturing a nitride device according to item 10 of the scope of the patent application, wherein the thickness of the high-concentration gallium nitride layer is preferably 100 Å to 800 Å. 2 2. The method for manufacturing a nitride device according to item 10 of the scope of the patent application, wherein the thickness of the high-concentration gallium nitride layer is more preferably 500 A.