1234194 玖、發明說明： 【發明所屬之技術領域】 本發明是有關於一種反向感光壓印圖案轉移製程， 尤才曰一種可使用蝕刻良好之模板（不需透明，不限材料） 使用在透明基材之圖_移應用，可降低模板製作 本’以及不用限定模板材料。 【先前技術】 奈米技術為今日最熱門的研究領域之一，太 將帶來新-波的工業革命，對經濟和社會帶； 擊。世界各國對奈米技術的研發經費補助呈現倍數辦 長’而奈純術之制在於：不損失其他特性下: 奈米技術，系統或設備的尺寸將會大幅縮小。 曰 而由於奈米電子可加快電腦速度，未來藉由將 儲存於分子的新技術研發，可大幅增加電子設備的儲存 容量。奈米化學、奈米生物和奈米物理也為醫藥科學、 能源環境及光學領域等等領域開啟另—扇窗。 干 因此許多相關單位及業者’已經開發出可 ⑽⑽解析度價格低廉的奈米壓印微影技術（n^1234194 发明, Description of the invention: [Technical field to which the invention belongs] The present invention relates to a reverse photosensitive imprint pattern transfer process. In particular, it can be used as a template that can be etched well (no need for transparency, no material restrictions). Substrate map_moving application can reduce the template production cost and no need to limit the template material. [Previous Technology] Nanotechnology is one of the hottest research fields today, and it will bring a new-wave industrial revolution, which will bring economic and social impact. Various countries around the world have given multiple grants for research and development funding for nanotechnology. The system of nanotechnology is that without losing other characteristics: With nanotechnology, the size of the system or equipment will be greatly reduced. In other words, because nanoelectronics can accelerate the speed of computers, the development of new technologies for storing molecules in the future can greatly increase the storage capacity of electronic devices. Nano-chemistry, nano-bio and nano-physics also open another window for the fields of medical science, energy environment and optics. Therefore, many related units and operators ’have developed nano-imprint lithography technology (n ^
Imprint Lithography ， NIL)。 且該奈米壓印蝕刻技術(NIL)應用於半 列 圖案轉印中亦逐漸受到重視。而這種技術與刻^八 類似，先以傳統微蝕刻（光罩，雷； 刀 卞束，聚焦離子束等） 1234194 $術將所要轉印的圖案（負片）製板於某種模板材料（通 系為矽晶圓）上，然後以一種高分子壓克力材料（J^MA一Imprint Lithography, NIL). Moreover, the application of the nano-imprint etch technology (NIL) in the half-row pattern transfer has also received increasing attention. This technique is similar to engraving. First, traditional micro-etching (photomask, thunder; knife beam, focused ion beam, etc.) is used to plate the pattern (negative film) to be transferred to a certain template material ( Through a silicon wafer), and then a polymer acrylic material (J ^ MA 一
Polymethyl methacrylate，）當作「印泥」也就是「阻 杬層（RESIST)」塗佈在元件基板材料上；再利用特殊的 儀杰，施以精確控制的壓力及溫度，將模板壓印在元件 基板上的高分子壓克力材料（PMMA)上，如此，即可使 核板上的圖案（正片）轉印到高分子壓克力材料（) 接著、、二過乾式餘刻如電漿姓刻（Plasma dch i ng)或 子式钕刻（RIE，Reactive ionic etching)進行钱 刻’就可得到所需的圖案。 來便有相關業者以奈米壓印微影技術在4吋晶圓 上製造出奈米級的金屬氧化物半導體（M〇SFET)元件。 另卜亦有使用备、外光交聯型（uv—curing)方式進行 微影技術，且已有相當不錯的成績。 而針對以备、外光父聯型（uv—curing)方式進行微影 技：，主要就是要使得在微影製程之中能使用較低溫度 進仃圖案轉移，並且經由⑽ss—linki叫的高分子物質 斤化成的阻抗層也較—般非⑽ss—⑽㉟式的高分 子阻抗層對於㉟刻的阻抗為佳，且此技術可得到與模板 圖案相同深寬比的轉移圖形。這種微影製程如第6圖所 示： '其中該第6圖中之阻抗層（etching barrier) 5 3 即為crQSS-linking型式的高分子阻抗層；而此類高分 1234194 子一般稱為光阻劑。 然而’在上述技術中需要使用透明模板 (Template)，材料一般使用石英及玻璃。而製造透明模 板目前最常使用的有二種方式·· 乾式#刻：例如反應性離子蝕刻（Reactive Etching，RiE)，該反應性離子蝕刻乃是結合電漿態 中反應物的化學活性與引起離子撞擊的物理影響來 達到蝕刻的一項技術。其係以加速獲得能量的正離子 來撞擊試片，屬於異向性㈣程序（anis〇tr〇pic etching process)(如第7圖所示）。該反應性離子 J (Reactive Ion Etching，RIE)結合物理及化 ΐ機制’經由改變通人氣體的组成量（氣體加成效 ^gas-adchtive effeet)㈣擇對光阻及欲㈣ 雔=的速率t匕因此兼具南度異向性及高姓刻選擇比 優點。如此可得到高深寬比且細微的蝕刻線路圖 2 I::為目前半導體工業所廣泛採用之技術。 .氫氟酸敍刻；此為傳統對氧化石夕⑽) 對刻所採用’其利用玻璃材料 生進行此技術因為為等向性触刻 生，有側㈣刻之副反應發 生，使侍蝕刻圖形不如齡 所以，頦八乂 ％太 式蝕刻，間接影響解析度。 乾式關在碰以心式關。不過， 璃此類氧化矽類材料時，因為 1234194 氧化矽的化學活性非常低，所以，以乾式蝕刻製作模板 時的㈣速率只能達到1個小時，數百奈米的深度，、所 =叙叹要製造一片深5微米的透明模板則需要數十小 呀，在XI期間，蝕刻阻抗層同樣接受蝕刻源的攻擊，有 可此會剝落。而用濕式蝕刻（氫氟酸）則解析度受限，並 且有安全上之考量。 w 【發明内容】 “因此，本發明之主要目的係在於，可使用蝕刻良好 '板（不而透明，不限材料）使用在透明基材之圖案 移應用，可降低模板製作成本。 〃 本毛月之另-目的係在於，可利用感光壓印dk 圖案轉移之方式達到大幅減少製作模板的困難 :模‘夺也此在感光物質圖案轉移技術中不再受限於透 可使感光性材料之壓印圖 而限制。 可達到節省傳統製造透明 本發明之再一目的在於， 案轉移製程不受模板是否透明 本發明之又一目的在於， 模板之時間。 為達上述之目的，本發明传一 轉移製程，係取一表面且古反向感光壓印圖 光阻;i &圖案之模4反’將液態 先阻抗層，塗佈於上述模板表面之凹凸圖案上 鑛有導㈣叙透縣材，細該㈣基材 + 膜之一面附著於上叙㈣感級抗層上，I後^ 1234194 由透明基材未設置導電薄膜之另一面照射，待液態感光 阻抗層聚合固化後，將模板與透明基材以及固化之液態 感光阻抗層離形；如此，即可完成將模板上之圖案轉移 至液態感光阻抗層上，可使用蝕刻良好之模板（不需透 月不限材料）使用在透明基材之圖案轉移應用，可降低 模板製作成本，以及不用限定模板材料。 【實施方式】 立請參閱『第i〜5圖』所示，係本發明製程之方塊示 $圖、本發明步驟一、二之示意圖、本發明步驟三之示 意圖、本發明步驟四之示意圖、本發明之離形狀態示意 圖々圖所示·本發明係一種反向感光壓印圖案轉移製 程，係包括下列步驟： 、 ^步驟一：取一表面具有凹凸圖案1 1之模板1，該 祆板1係不限疋其材料，而該模板1上之凹凸圖案11 係可以乾式姓刻之方式所製A，且該模板丄係可為一透 明狀或為不透明狀； 步驟二：請參照第2圖所示，係將液態感光阻抗層 f :塗佈於上述模板1表面之凹凸圖案1 1上，而該液 :感光F且k層2係可以旋塗之方式塗佈於模板1之凹凸 H11上’且該液態感光阻抗層2係可為紫外光交聯 ^ UJV curing); “, 明參照第3圖所示，取一鑛有透明導電薄 膜3 1之透明基材3，而該透明基材3可為透光性無機 1234194 材料^或為透光性高分子材料，並以該透明基材3具有 ‘電薄膜3 1之一面附著於上述之液態感光阻抗層2 步驟四··請參照第4圖所示，係以-光源4由透明 二材2未叹置導電薄膜3丄之另—面照射，待該液態感 、阻抗層2聚合固化後’將模板1與透明基材3以及固 化之液態感光阻抗層2離形（如第5圖所示）；如此，即 可f由上述之各步驟完成將模板1上之圖案1i轉移至 液態感光阻抗層2上；如是，藉由上述之步驟構成—全 :之反向感光壓印圖案轉移製程，可以蝕刻良好之模： 1(不需透明’不限材料）使用在透明基材3之圖 ’可降低模板i製作成本，並可利用該製程達 固荦製作模板1的固難度，同時也能在感光物質 =轉移技術中不再受限於透光模板，且可使該圖案轉 2 模板1是否透明而㈣，“可達到節省傳 衣造透明模板之時間，其中，可參考附件一附件：^ 本發明之製程完成後之實例圖示。 一為 准以上所述者，僅為本發明之較佳實施例而已，冬 定本發明實施之範圍；故’凡依本發明申； :圍及發明說明書内容所作之簡單的等效變化與修 ，^應仍屬本發明專利涵蓋之範圍内。 10 1234194 【圖式簡單說明】 第1圖，係本發明製程之方塊示意圖。 第2圖，係本發明步驟一、二之示意圖。 第3圖，係本發明步驟三之示意圖。 第4圖，係本發明步驟四之示意圖。 第5圖，係本發明之離形狀態示意圖。 第6圖，習用之微影製程示意圖。 第7圖，乾式蝕刻之示意圖。 第8圖，濕式蝕刻之示意圖。 附件一，係本發明之實例圖示。 附件二’係本發明之另一貫例圖不。 附件二，係本發明之再一實例圖示。 【元件標號對照】 模板1 圖案1 1 液態感光阻抗層2 透明基材3 導電薄膜3 1 光源4 阻抗層分佈5 透明模板51 1234194 離形處理5 2 阻抗層5 3 轉移層5 4 壓印6 曝光7 紫外光照射7 離形8 殘餘層蝕刻9 轉移層独刻1 異向性姓刻1 等向性蝕刻1Polymethyl methacrylate,) is used as "printing mud", that is, "resistance layer", coated on the component substrate material; and then using a special instrument to apply precisely controlled pressure and temperature, the template is imprinted on the component substrate On the polymer acrylic material (PMMA) on the surface, in this way, the pattern (positive film) on the core board can be transferred to the polymer acrylic material (). (Plasma dch i ng) or sub-type neodymium etching (RIE, Reactive ionic etching), the desired pattern can be obtained. In the future, some related manufacturers used nano-imprint lithography technology to fabricate nano-scale metal oxide semiconductor (MOSFET) devices on 4-inch wafers. In addition, there are also lithography techniques using the preparation and external light cross-linking (uv-curing) method, and have achieved quite good results. For lithography in the prepared and external light-curving (uv-curing) mode: the main purpose is to enable lower temperature to be used for pattern transfer in the lithography process, and to pass the high-level 叫 ss-linki The resistance layer formed by molecular substances is also better than the non-⑽ss-⑽㉟-type polymer resistance layer for the engraved resistance, and this technology can obtain a transfer pattern with the same aspect ratio as the template pattern. This lithography process is shown in Figure 6: 'Where the resisting barrier 5 3 in Figure 6 is a polymer resistance layer of the crQSS-linking type; and such high score 1234194 is generally called Photoresist. However, in the above technology, a transparent template is needed, and quartz and glass are generally used as materials. There are currently two methods used to make transparent templates: Dry type engraving: for example, reactive ion etching (Reactive Etching, RiE), which is a combination of chemical activity and The physical effect of ion impact is a technique to achieve etching. It hits the test piece with positive ions accelerating to obtain energy, which is an anisotropic etching process (as shown in Figure 7). The reactive ion J (Reactive Ion Etching, RIE) combines the physical and chemical mechanisms 经由 by changing the composition of the gas (gas-adchtive effeet) to select the rate of photoresistance and desire 雔 = Therefore, the sword has both the advantages of Nandu anisotropy and high surname selection ratio. In this way, a high-aspect-ratio and fine-etching circuit diagram 2 I :: is a technology widely used in the semiconductor industry. . Hydrofluoric acid engraving; this is the traditional method for oxidizing stone oxide.) The technique used for engraving is to use glass material for this technology. Because it is isotropic touch engraving, side reactions of side engraving occur, making the etching The figure is not as good as the age, so the type of etching is 28%, which indirectly affects the resolution. Dry off in touch off with heart off. However, when using silicon oxide materials such as glass, the chemical activity of 1234194 silicon oxide is very low. Therefore, the rate of rubidium can only reach 1 hour when the template is made by dry etching, with a depth of several hundred nanometers. Sigh, it takes dozens of hours to make a transparent template with a depth of 5 micrometers. During XI, the etching resistance layer is also attacked by the etching source, but it may peel off. With wet etching (hydrofluoric acid), the resolution is limited and there are safety considerations. w [Contents of the invention] "Thus, the main purpose of the present invention is to use well-etched 'plates (but not transparent, unlimited materials) for pattern transfer applications on transparent substrates, which can reduce template production costs. Another part of the month-the purpose is to use photo-imprint dk pattern transfer to greatly reduce the difficulty of making templates: molds are no longer limited in the pattern transfer technology of photosensitive materials. It is possible to save the traditional manufacturing transparency. Another object of the present invention is that the process of transferring the plan is not affected by whether the template is transparent or not. Another object of the present invention is the time of the template. The transfer process is based on the photoresist of one surface and the ancient reversed photo imprint; the pattern of the i & pattern is reversed, and the liquid first impedance layer is coated on the uneven pattern on the surface of the template. Material, one side of the substrate + the film is attached to the above-mentioned sensor-level anti-resistance layer, and after I 1234194 is irradiated from the other side of the transparent substrate without a conductive film, and the liquid photoresistance layer is gathered After curing, the template is separated from the transparent substrate and the cured liquid photoresistance layer; in this way, the pattern on the template can be transferred to the liquid photoresistance layer. A well-etched template can be used (no need to pass through the moon and unlimited) Material) The pattern transfer application used on the transparent substrate can reduce the template production cost and eliminate the need to limit the template material. [Embodiment] Please refer to [Figures i ~ 5] for a block diagram of the process of the present invention. 2. Schematic diagrams of steps 1 and 2 of the present invention, schematic diagrams of step 3 of the present invention, schematic diagrams of step 4 of the present invention, and schematic diagrams of the released state of the present invention (shown in the figure). The present invention is a reverse photosensitive imprint pattern transfer process. The method includes the following steps: Step 1: Take a template 1 with a concave-convex pattern 11 on the surface, the fascia 1 is not limited to its material, and the concave-convex pattern 11 on the template 1 can be made by dry-type engraving. A, and the template can be transparent or opaque; Step 2: Please refer to Figure 2 to apply the liquid photoresistance layer f: on the concave surface of the template 1 Pattern 1 1 and the liquid: photosensitive F and k layer 2 can be spin-coated on the unevenness H11 of the template 1 'and the liquid photosensitive resistance layer 2 can be UV light crosslinked ^ UJV curing); ", As shown in Figure 3, a transparent substrate 3 with a transparent conductive film 31 is taken, and the transparent substrate 3 may be a transparent inorganic 1234194 material ^ or a transparent polymer material, and The transparent substrate 3 has the 'electric thin film 3' on one side and is attached to the liquid photoresistance layer 2 described above. Step 4: Please refer to FIG. 4. The light source 4 is made of a transparent two material 2 without a conductive film. 3) The other side is irradiated. After the liquid sensation and the resistance layer 2 are polymerized and cured, the template 1 is separated from the transparent substrate 3 and the cured liquid photosensitive resistance layer 2 (as shown in FIG. 5); The above steps can be completed to transfer the pattern 1i on the template 1 to the liquid photoresistance layer 2; if so, by the above steps-full: reverse photoimprint pattern transfer process, you can etch a good mold : 1 (no need to be transparent 'unlimited material') Use of 3 in a transparent substrate can reduce the production of the template i This method can be used to achieve the difficulty of making template 1. It can also no longer be limited to the light-transmitting template in the photosensitive material = transfer technology, and can make the pattern 2 whether the template 1 is transparent and ㈣. "It can save the time to transfer and make transparent templates. Among them, you can refer to the appendix of Appendix I: ^ The illustration of the example after the process of the present invention is completed. One of the above is only the preferred embodiment of the present invention, and the scope of implementation of the present invention is determined in winter; therefore, 'every application according to the present invention: simple equivalent changes and modifications made in accordance with the content of the invention and the description of the invention, ^ It should still be within the scope of the invention patent. 10 1234194 [Brief description of the drawings] Figure 1 is a block diagram of the process of the present invention. Figure 2 is a schematic diagram of steps 1 and 2 of the present invention. Figure 3 is a schematic diagram of the third step of the present invention. FIG. 4 is a schematic diagram of the fourth step of the present invention. FIG. 5 is a schematic diagram of a state of disengagement of the present invention. Figure 6 is a schematic diagram of a conventional lithography process. FIG. 7 is a schematic diagram of dry etching. FIG. 8 is a schematic diagram of wet etching. Attachment I is an illustration of an example of the present invention. Annex II 'illustrates another conventional example of the present invention. Attachment II is another illustration of the present invention. [Comparison of component numbers] Template 1 Pattern 1 1 Liquid photosensitive resistance layer 2 Transparent substrate 3 Conductive film 3 1 Light source 4 Resistance layer distribution 5 Transparent template 51 1234194 Release treatment 5 2 Resistance layer 5 3 Transfer layer 5 4 Imprint 6 Exposure 7 UV light irradiation 7 Distortion 8 Residual layer etching 9 Transfer layer engraving 1 Anisotropic engraving 1 Isotropic etching 1