TWI232565B - Semiconductor chip-carrying substrate and its manufacturing method - Google Patents

Abstract

The present invention provides a semiconductor chip-carrying substrate and its manufacturing method. Plural first through holes are opened at the metal substrate that is provided with the upper and the lower conduction layers; and these through holes are stuffed to form plural plug pillars. Then, the second drilling process is conducted onto these plug pillars to form a protection layer on each hole wall of the first through holes. After that, a through hole conduction layer is formed on the protection layer so as to make both the upper and the lower parts of each through hole conduction layer contact with the upper and the lower conduction layers, respectively. Thus, the present invention provides a kind of dual-face connection-type metal substrate on which chips can be mounted directly to reach the effects of high heat dissipation, elongating lifetime of chip and increasing LED brightness.

Description

1232565

[Technical field to which the invention belongs] Insertion is related to a semiconductor die substrate, especially a metal substrate structure and method that can be connected on both sides and can be connected on both sides [prior art] With the circuit connection of integrated circuits The high degree of integration of dots and the widespread use of semiconductor grains make the heat dissipation structure of semiconductor elements even more important. Take light-emitting diode (LED) as an example. Because of its colorful, energy saving, long life and high safety, it has been widely used in lighting; however, LED components generally have poor heat dissipation. problem. As shown in the first figure, a conventional light emitting diode device with a heat dissipation structure is a packaged light emitting diode element 10 that is adhered to a nameplate 12 using surface mount technology (SMT) so that The aluminum plate 12 is used to enhance heat dissipation; however, this method must first connect the LED die 14 and printed circuit board PCB 16 to form a complete light-emitting diode element IQ, and then emit light. The diode element 10 is adhered to the single-sided circuit 20 of the aluminum plate 12 with a solder paste 18. This method not only increases the production cost and material cost, but also the heat dissipation path of the LED die 14 must pass through the printed circuit board made of plastic or ceramics, and then the heat can be dissipated through the aluminum plate 12, and still has the lack of poor heat dissipation effect; Due to the poor heat dissipation of the LED die 14, its luminous intensity and service life will be affected. In addition, the aluminum plate 12 is only suitable for single-sided connection, that is, the aluminum plate 12 can only be used as a heat sink of the light emitting diode element 10, and cannot be used.

V. Description of the invention ⑵ As the substrate of SMD LED directly. In order to solve the problem, a semiconductor crystal is proposed. Therefore, the present invention is directed to the above-mentioned carrier substrate and a manufacturing method thereof. [Summary of the invention] The substrate of the present invention can only provide a single body crystal of the present invention to directly and directly dissipate heat using a hole material and a drilled metal substrate. The main purpose of the external metal force is to provide a secondary drilling hole in the metal substrate. The control of the process in order to make 'thereby overcoming the shortcomings of the metal substrate known in the plug hole surface connection type is to provide the implantation of this metal material without the need to heat through the board as is conventional, and Effectively improve a semiconducting method, and issue a continuum on the ink. Difficulties and substrates for supporting double-sided connection holes of printed electrical heat-dissipating semiconductor crystal grains with appropriate plug holes on a metal substrate, so that semiconducting semiconductors can be used to make the circuit board pass through the bulk crystal grains. Another goal is to provide a double-sided connection type metal substrate to achieve the effect of extending LED life and increasing brightness. In order to achieve the above-mentioned object, the present invention first provides a metal substrate, each of which is provided with an upper and a lower conductive layer on opposite surfaces thereof, and then a plurality of via holes are formed on the metal substrate, wherein each via hole penetrates the metal The substrate is provided with a protective layer on the hole wall of each via, and then a via conductive layer is formed on the protective layer. The detailed descriptions are provided below with specific examples and accompanying drawings to make it easier to understand the purpose, technical content, features and effects of the present invention. 0 1232565 V. Description of the invention (3) [Embodiment] Use of metal The purpose of the substrate is to enhance heat dissipation. The thermal conductivity of metal is better than that of ceramics and plastic. When a metal substrate is used as a carrier plate for a semiconductor wafer such as an LED wafer, it can smoothly dissipate the heat generated when the LED emits light into the air. . The second to ninth figures are cross-sectional views of the steps of the present invention in the process of manufacturing a semiconductor die carrier substrate. Please refer to FIG. 7 for a schematic diagram of the present invention. A semiconductor die carrier substrate 30 includes a The metal substrate 32, which is commonly used as a shao board, is provided with an upper and a lower bonding pad layer 34, 34 'on each of the two opposite surfaces, so that the two upper and lower conductive layers 36, 36 pass through the two bonding adhesive layers 34, 34. 'Respectively bonded to the two surfaces of the metal substrate 32' The one conductive layer 36, 36 is usually a copper layer; in addition, the metal substrate 32 is provided with a plurality of through-holes 38 penetrating therethrough. A protective layer 40 and a through-hole conductive layer 42 are sequentially formed. The protective layer 40 is composed of an epoxy resin, and the through-hole conductive layer 42 is usually a bond copper layer. The lower conductive layers 36, 36 are in contact. In the fabrication of the semiconductor die carrier substrate 30, it is necessary to overcome the difficulty of drilling the via hole ink after the via hole 38 is inserted in the via hole and keeping the via hole ink from cracking and falling off. Methods can overcome this problem. After understanding the overall structure of the present invention, the layers of the present invention and their manufacturing methods will be described in detail. Please refer to the second to ninth figures. First, as shown in the second figure, a metal substrate 32 is provided. An aluminum plate is commonly used. The two opposite surfaces of the metal substrate 32 have been covered with two upper and lower conductive layers 36, 34 through two bonding adhesive layers 34, 34 '. 36, which is usually a copper layer; then tail page 7 1232565

The first drilling operation is performed as shown in the third circle. This step is to drill the metal substrate 32 to form a plurality of first through holes 38 and positioning holes 39. The plugging operation is not performed as shown in the fourth figure. The steps are to fill the first through holes 38 with ink to fill the stuffed ink. After baking and curing and brushing, a plurality of plugs 44 ′ are formed, wherein the ink is a ring with excellent adhesion to the metal substrate 32. For oxygen-based resin materials, the second drilling operation is performed as shown in the fifth figure. The holes 44 are drilled to form a plurality of second through-holes 46. The diameter of the second through-holes 46 is It is smaller than the first through hole 38, so that after the second drilling, a protective layer 40 made of resin material is formed on the hole wall of each first through hole 38. Since the hardness of the above-mentioned plugging ink after curing is as high as 9H or more, in order to avoid cracks in the ink during drilling, the drilling pad must be made of a higher hardness material, and the urea board for general drilling cannot be used. 4FR4 (FR4 refers to C-Stage with plastic glass, collectively referred to as cloth). It is a phenolic resin board. In addition, the best one-person drilling speed is controlled at 丨 · 4 to 丨 · 6 m / s, and the better speed is controlled at 35 to 45 krpm. It is better that it is 24 to 26 m / S. With this drilling condition and appropriate ink, the plug hole column 44 will not crack or fall off when drilling. After the protective layer 40 is completed on the first through holes 38, the copper plating operation is continued as shown in the sixth figure, and then the through holes are formed on the walls of the second through holes 46 (the protective layer 40). Layer 42 and copper plating layers 47 are also formed on the surfaces of the upper and lower conductive layers 36 so that the upper and lower conductive layers of each through hole are in contact with the upper and lower conductive layers 36 and 36 respectively.

1232565

Since copper plating of the aluminum metal substrate 32 directly causes the metal substrate 32 to oxidize and black due to the chemical interaction between aluminum and copper, the first through hole 38 of the metal substrate μ and the conductive layer 42 of the through hole must be first The protective layer 40 is provided, and then the copper plating operation can be performed on the metal substrate 32. After the formation of the copper through-hole conductive layers 42 ', as shown in the seventh figure, a circuit forming manufacturing operation is performed so as to produce a circuit layout 48 on the copper plating layer 47 of the metal substrate 32. At this point, the production of the main structures of the carrier substrate 30 has been completed. Among them, the circuit molding system uses a general printed circuit board manufacturing method, that is, a dry film is applied to the surface of the board using a laminator, and the dry film is used to cover the dry surface. Through the exposure method on the film, the dry film is subjected to photopolymerization, and the ^ path is smoothly transferred; then, the unpolymerized dry film is dissolved by the development process to leave a dry film layer for protecting the required circuit, and then transmitted The etching process removes unnecessary copper surface parts, and finally the film removal process is used to remove all the dry films on the board surface to leave the required wiring. After the circuit fabrication is completed, the present invention can further perform a surface treatment step as shown in FIG. 8. The surface treatment film 50 is formed by a surface treatment method of electroplated nickel gold or nickel immersion gold. The purpose of the surface treatment of electroplated nickel gold or nickelized hankin is to protect the copper surface from oxidation by a surface treatment film 50. The most important function is to provide a second solder joint for wire bonding. #Finally, cover the holes as shown in the ninth figure, and cover the second through holes 46 with a plurality of dry films 52, wherein the dry film 52 is a photosensitive polymer, so that a semiconductor wafer carrying substrate 3 is formed. 〇 的 制造。 Production. At this step

1232565 V. Description of the invention (6) The purpose of the 'cover hole' is to prevent the resin during subsequent LED die packaging from flowing through the second through hole 46 to the pad on the other side to form an insulating layer to avoid loss of soldering. Continuity function. Here, it is only necessary to cover the hole on one side of the metal substrate 32. When the above-mentioned carrier substrate 30 replaces the conventional printed circuit board as the substrate of the semiconductor die, since the thermal conductivity of metal is better than that of ceramic and plastic, it can effectively enhance the heat dissipation of the semiconductor die. The tenth figure is a structural schematic diagram of a carrier substrate using the LED substrate as an LED die according to the present invention. As shown in the figure, a groove 60 is provided on the carrier substrate 30 according to design requirements, and then a LEI) crystal is provided. The granules 54 are directly implanted on the carrier substrate 30 made of metal with silver glue 56, and then the wires are encapsulated and the resin is encapsulated to complete an LED package component 58. The heat can be dissipated by the aluminum metal of the substrate 30, thereby extending LE ]) Life and increase brightness. Therefore, the present invention utilizes the method of secondary drilling on a metal substrate, and combines appropriate plugging materials and control of drilling conditions to produce a double-sided connection substrate with a via hole to provide mounting semiconductor die. Therefore, the present invention not only overcomes the difficulty of drilling holes known in the plugging ink and can only provide a single-sided connection metal plate in the manufacturing method, thereby providing a double-sided connection type substrate, but also can be mounted on it. The semiconductor chip above achieves effective heat dissipation. The above is the description of the characteristics of the present invention through the examples. The purpose is that those skilled in the art can understand the content of the present invention and implement it based on it, rather than limiting the scope of the patent of the present invention. Equivalent modifications or modifications made by the spirit disclosed in the present invention should still be included in the application described below.

1232565 V. Description of the invention (7) In the scope of patent. Description of drawing number: 10 light emitting diode element 14 LED die 18 solder paste 30 bonding layer 36 on the substrate 34 conductive layer 38 via / first through hole 40 protective layer 44 plug 47 copper plating 50 surface Processing film 54 LED die 58 LED package element 12 aluminum plate 1 6 printed circuit board 20 single-sided circuit 32 metal substrate 34 'lower bonding layer 36' lower conductive layer 3 9 positioning hole 42 through hole conductive layer 46 second through hole 48 Circuit layout 52 dry film 56 silver glue 60 groove

Page 11 1232565 Brief description of the diagram The first diagram is a schematic diagram of a conventional light emitting diode device with a heat dissipation structure. The second to ninth figures are cross-sectional views of the steps of the present invention in the fabrication of a semiconductor die carrier substrate. The tenth figure is a schematic diagram of the structure of the carrier substrate of the present invention which is used as the carrier plate of the LED die.

Page 12

Claims (1)

1232565 6. Scope of patent application 1. A semiconductor die-bearing substrate, including: a metal substrate 'which is sequentially covered by a repertoire-the upper surface is attached to the upper surface of the metal plate-the lower surface is bonded with an adhesive layer and -The lower conductive layer; and the =: the via hole penetrates the metal substrate, and a protective layer and a through-hole conductive layer are arranged on each of the-=; The lower jaw blade is connected to the upper and lower conductive layers. 2. As described in the first half of item i of the patent application scope, the metal plate is a nameplate. + Guide board for Rilipin carrier, 3 of them are as follows: =! The semiconductor die carrier board described in item 1, wherein the protective layer is composed of epoxy resin. For example in 4: special = the semiconductor die carrier substrate described in item 1, wherein the upper and lower conductive layers are each provided with a circuit layout. 5. In the semiconductor described in item 丨 of the patent application scope, the material of the upper and lower conductive layers is copper. In the carrier substrate, the semiconductor die carrier substrate described in the first item in the first item, wherein the material of the through-hole conductive layer is copper. 7. The bearing of the semiconductor die as described in item 丨 of the scope of the patent application, wherein the conductive layers are formed by electroplating. The semiconductor die carrier substrate described in the first item of the invention is used as a carrier substrate for the development of the first diode die. Dan 9. A method for manufacturing a semiconductor die carrier substrate, including providing a metal substrate, the metal substrate including a metal plate, 1232565 6. The scope of patent application The upper surface of the board is sequentially covered with an upper surface and the lower surface of the metal plate are sequentially covered: a glue layer and an upper conductive layer, and a layer; a glue layer and a conductive layer Perform the first drilling operation, # 料 # 入 b number of first through holes; drilling the metal substrate to form a plurality of first through holes to form a plurality of plugs; The plugs are drilled to form a plurality of holes, the holes of the first through holes are smaller than the holes of the first through holes, so that a protective layer is formed on each of the walls of the holes. A plurality of through-hole conductive layers are formed on the hole walls of the second through-holes, so that the upper and lower portions of each of the through-hole conductive layers are in contact with the upper and lower portions, respectively. 10. The manufacturing method according to item 9 of the scope of patent application, wherein the board is a board. 11. The manufacturing method described in item 9 of the scope of patent application, wherein the material used for the first through hole is an epoxy resin ink. 12. The manufacturing method described in item 9 of the scope of patent application, wherein In the second drilling step, a high hardness drilling pad is used. 13. The manufacturing method according to item 12 of the scope of patent application, wherein the drilling pad is made of phenolic resin. 14. The manufacturing method according to item 9 of the scope of patent application, wherein in the step of performing the second drilling, the feed speed is 1.4 to 1.6 m / s, and the rotation speed is 35 to 45 krpm. The retracting speed is 24 to 26 m / s. 15. The manufacturing method according to item 9 of the scope of patent application, wherein ^ 32565 6 Application scope of the patent The steps of the 2m electric layer use the electroplating method. Among them, the material of the conductive layer described in item 9 of the upper and lower patent fan garden is the manufacturing method of nano, wherein the material of the conductive layer of the manufacturing method described in item 9 of the patent application scope of the through hole is steel. Table & Wanfa is conductive under formation. After forming the manufacturing method as described in item 9 of the patent scope, after = conductive layer of the through hole, it also includes a step 4 which will be = 19 ^ from the circuit forming operation to make Out the circuit layout. Yun Sheng, the manufacturing method described in item 9 of the scope of patent application, wherein the conductive layer of the through hole further includes a surface treatment step. • The manufacturing method as described in item 19 of the scope of patent application, wherein the processing method used in the table = processing step is selected from the group consisting of electroplated nickel gold and nickel immersion gold.