TWI232497B - Mask - Google Patents

Abstract

A mask is provided for a wafer. The wafer is put into a manufacturing device to set a plurality of parameters. In addition, the mask is covered on the wafer, the mask has an opening exposed some portion of the wafer. With changing the relative position of the opening of the mask and the wafer, the other portions of the wafer can be exposed in the opening of the mask in order to operate different parameter setting.

Description

1232497 V. Description of the invention (1) 1 The technology of the _ belongs to the question ΓΓ is about a kind of mask, and especially about a kind of mask used to adjust the parameter setting of the wafer. Just prior technology The semiconductor industry is one of the fastest growing high-tech industries in recent years, and the photolithography process is currently one of the irreplaceable processes. Before the semiconductor ==, including the source of the active 7L element and the drain electrode's ion implanted metal interconnect layer (Interc_ection iayer), the circuit pattern or 疋 is defined by the lithography process, which is usually Dozens of steps can be completed. In addition, in the subsequent semiconductor manufacturing process, the scoop = bump process or the production of the ball-bottom metal layer (UBM) must also transfer the pattern to the photoresist to define the bumps. The position of the bit or bottom metal layer. Regardless of the front-end process or the rear-end process, the exposure machine or related equipment used in the film production process deeply affects the process capability of the entire system. The entire lithography process is roughly divided into three major steps, namely resist coating, exposure and development. When performing the lithography process, the necessary elements in addition to the light source, In addition to a photo mask and a photoresist, a developing solution (deVeloper) for development is required. Among them, the thickness of the photoresist covering the wafer is related to the viscosity of the photoresist, and whether the photoresist is evenly distributed on the wafer will affect the quality of the subsequent exposure. Once the thickness of the photoresist is inconsistent or too large, the pattern of the photomask will be incomplete or overexposed when it is transferred. 1 Page 5 ^ l] 896twf .ptd 1232497 V. Description of the invention (2) '~ ~~ 'trap. In addition, in the exposure step, the ultraviolet (ltra-V10let Light) light source or deep ultraviolet light source used by the exposure machine must also adjust the appropriate reduction ratio in order to match the photomask = the thickness of the photoresist Kiss ☆, so as to be able to i on the photoresist; It is not easy to control the above-mentioned exposure conditions by performing y solution. It is difficult to control the intensity of the ideal exposure light source and the ideal exposure time of the second system. J: The exposure parameter settings of 疋 use different test bases. This consumes a lot of ㈣ wafers for testing, which makes the cost of testing high. The wafer therefore, 'the object of the present invention is to provide a mask that is suitable for certain applications. The purpose of exposing a part of the wafer s ′ and setting different parameters is to provide a kind of semiconductor process equipment, which is applicable. Q-B said that different parameter settings are performed on the circle to reduce the above-mentioned purpose of the covered invention of the test. The present invention proposes a kind of mask suitable for covering the army. Right as the process equipment is in the process of adjusting process parameters. Α% μ mask, there is an opening to expose part of the surface of the wafer, and its τ is changed from the opening of the wafer to the other surface of the wafer. Align £ to expose the opening of the mask

1232497 V. Description of the invention (3)

In order to achieve the objective of the present invention &, the present invention * exports: prepared, suitable for-crystal; this semiconductor processing equipment has known equipment, -mask and 'mask revolving frame, "process equipment can be adjusted process parameters To set multiple parameters. In addition, the mask is covering the crystal 2

The mask is disposed between the process equipment and the wafer 'and the mask has an opening that exposes a part of the surface of the wafer. In addition, the "mask rotation rack is used to carry the mask and surround the mask opening on the wafer", where the relative position of the opening and the wafer is changed, so that the mask opening is blown out of the wafer. surface. In order to achieve the above-mentioned object of the present invention, the present invention proposes a method for parameter setting using a part of a surface of a wafer, which is suitable for setting different parameters on a wafer. First, a mask is provided. The mask has an opening, and a part of the surface of the wafer is exposed in the opening. The receiver 'changes the relative position of the opening of the mask and the wafer so that the opening sequentially exposes other surfaces of the wafer. The present invention uses a mask which can divide the wafer into a plurality of regions. Each area can be set for different exposure parameters for different exposure parameters. Therefore, multiple exposure settings can be made on the same wafer to reduce the number of crystals, circles and 3 used in the test, and reduce the test cost. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below, and in conjunction with the accompanying drawings, the detailed description is as follows: Please refer to FIGS. 1 and 2, It respectively illustrates a preferred embodiment of the present invention.

1232497 V. Description of the invention (4) A schematic diagram of the process of using a part of the surface of a wafer to set parameters. First, a mask 110 is provided, and the mask 110 has an opening 112. The opening 1 12 is, for example, a fan-shaped opening with a radius slightly smaller than or equal to the radius of the wafer 1000, and the area of the opening 11 2 is approximately Wafer 1/8 of the total area of 1/6 or 1/6 or other proportions. Next, a part of the surface of the wafer 1000 is exposed in the opening 1 12 for parameter setting, and then the relative position of the opening 1 12 of the mask 1 1 2 and the wafer 1 100 is changed, for example, Rotate the mask clockwise or counterclockwise to rotate the mask 11 clockwise so that the opening of the mask film 11 exposes the other surface 104 of the wafer 100. The mask 11 can be arranged on a mask rotating frame (not shown), so that the opening 110 of the mask 110 can be 360 degrees around the wafer 1000, and the wafer 1 00 Divided into multiple areas (for example, 102, 104 marked in the figure) to set different parameters. In addition, the mask can also be fixed, and the wafer 1000 can be rotated by a wafer rotation base (not shown). This method can also expose the other surfaces of the wafer in the opening 112. Reference is made to Figures 3 and 4 which are schematic diagrams of a mask according to another preferred embodiment of the present invention, respectively. The mask 2 10 has an opening 2 丨 2, where the opening 2 ^ 2 is, for example, a fan-shaped opening, and a mask positioning sheet 220 can be disposed below the mask 2 丨 0. The mask positioning sheet 220 is roughly divided into a plurality of opening regions 222 (for example, six). When the mask 21 rotates clockwise or counterclockwise, its opening 212 passes through each opening region m one by one. In FIG. 3, when the opening 212 of the mask 210 is located in one of the opening areas m, a part of the surface of the wafer (not shown) is exposed for parameter setting. In Figure 4, when the opening 2 1 2 of Nakada mask 2 1 2 is transferred to another opening area 2 2 2, then

1232497 V. Description of the invention (5) Exposing the other surface of the wafer to set another parameter, and so on. The above mask can be used to adjust the parameter settings of various semiconductor process equipment. For example, in the later stage of the semiconductor process, the position where the bumps are grown or the position of the metal layer under the ball can be defined by the exposure equipment of the lithography process as the position of subsequent plating or printing bumps. First, a photoresist (not shown) is coated on the surface of a wafer 100, for example, the photoresist is coated on the wafer 100 by a spin coating method to make the photoresist The surface is flat and the thickness of the photoresist is uniform to avoid defects such as incomplete or overexposure during subsequent pattern transfer. Next, the wafer 100 is placed in an exposure device (not shown in green), and the exposure machine provides a light source with sufficient brightness, such as an ultraviolet light source or a deep ultraviolet light source, and controls an appropriate exposure time to place the photomask on The pattern is accurately transferred to the photoresist. In this embodiment, the exposure machine used is, for example, a projection exposure machine, which projects the pattern on the photomask onto the photoresist at an appropriate ratio. In addition, the depth of focus provided by the exposure machine must match the thickness of the photoresist so that a good resolution pattern can be obtained on the photoresist. β month refer to Figure 1 'Before setting the exposure parameters, first cover a mask 110 on the wafer 100, the size of the wafer can be 6 inches, 8 inches, or 12 hours, etc., and the opening 112 of the mask 110, It exposes a part of the photoresist. Since the mask 110 can block the exposure light source from being projected on other areas of the photoresist, only the exposure light source is allowed to pass through the opening 丨 2 and be projected on the area 102 defined by the opening 丨 丨 2. Next, referring to Figure 2, change the relative position of the opening of the mask 11 and the wafer 100 so that the opening of the mask 丨 丨 〇 2 exposes light.

1232497 V. Description of the invention (6) Other surfaces of resistance. Therefore, on the same wafer 100, by surrounding the opening 112 on different regions of the wafer 100, the wafer 100 can be divided into a plurality of regions 102 'for different exposure parameter settings, and The exposure test that originally required different wafers as the test substrate can be completed with only one wafer, so the number of wafers used in the test can be greatly reduced, thereby reducing test costs. In this embodiment, the opening 112 used in the mask 110 is, for example, a fan-shaped opening, and the fan-shaped opening 1 2 is rotated around the center of the wafer as the center point, and the wafer 100 is divided into a plurality of regions 102. Wherein, each region 102 is distributed in a leaf shape on the wafer 100, and the sides of the region 102 are not separated from each other. In addition, the sides of each area 02 may be connected to each other, or only one side may be connected, and the other side may not be connected. In addition, the shape of the opening 丨 2 is not limited to a fan-shaped opening, but may also be a circular opening, a rectangular opening, or a ladder = opening, and the opening 1 12 is rotated around the center of the circle of the wafer 1000 to define Different regions 102 are on the wafer 100. In addition, the surface of the opening 112 is not limited to that shown in Figures 1 and 2, and the area of the opening may be increased or decreased according to the actual exposure test. Effect 2: After covering the army 110 with an appropriate size opening, the next step is to adjust the parameters, such as controlling the intensity of the exposure and the length of the exposure time. Select an area 102 of the wafer 100 to be exposed to the opening 112. The patterns presented in the unconditional conditions will become important exposure parameter settings. For example, * 'after and again' and repeatedly change the exposure parameters, revealing one of these areas 102 in the opening 0112, so that each area 102 of the wafer 100 presents different exposure effects, thereby Get close

1232497 V. Description of the invention (7) Ideal exposure conditions. In terms of industrial use, the exposure mask disclosed in the present invention for the front-end process or the semiconductor back-end system can also be used to adjust the number or depth of active element implants on the wafer, and the number of different implants on the wafer is different. The best surname engraving technology often used on the off-circle is also available. You can also adjust the parameters of the surname engraving equipment from the same area. Process equipment such as (over etch) or incomplete surname engraving. Insects, etc., can use masks to perform multiple processes. In summary, since the present invention adopts a mask that can be used, various regions on the wafer can be set for different parameters. Therefore, the same parameters are set to reduce the number of crystals used in the test. Although the present invention has been described with a preferred embodiment to limit the present invention, anyone skilled in the art can work within the scope and spirit of the art. A little more & and the scope of the mask as the scope of the attached patent application, suitable for semiconductor testing process. In addition, the ion implantation status obtained on the source and drain regions of this case. In addition, the mask 'is not tested for excessive etching on the wafer5. Therefore, the relevant semiconductor engraving equipment and exposure equipment parameters are set to obtain the same process parameters for the most wafer divided into multiple regions. By performing the circle, the number of circles can be performed multiple times, and the test result can be reduced as above. However, it is not useful, and it does not depart from the refined decoration of the present invention. Therefore, the guarantee of the present invention shall prevail.

1232497 Brief Description of Drawings Figures 1 and 2 respectively show a schematic flow chart of a method for setting parameters using a part of a surface of a wafer according to a preferred embodiment of the present invention. 3 and 4 are schematic diagrams of a mask according to another preferred embodiment of the present invention, respectively. [Illustration of Graphical Symbols] 100 crystal 102 crystal circle part surface 104 crystal circle other surface 110 mask 112 opening 210 mask 212 opening α 220 mask positioning piece 222 opening area

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Claims (1)

1232497 VI. Scope of patent application1. A masking device adjusts the process to the position of the part of the wafer to '2'. If you apply for a special positioning piece, there are more than each of these openings. 3 · If you apply for one Scalloped opening. 4. If applying for a triangular opening. 5 · If applying for a circular opening. 6 · If applying for a trapezoidal opening. Suitable for covering a wafer as a mask for a process parameter, the mask has an opening, exposing the surface, wherein the opening is exposed by changing the phase mask of the opening and the wafer. Other surfaces of the wafer. The mask described in Item 1 further includes a mask and a plurality of opening areas, and the opening of the mask is suitable for the through area. The mask according to item 1 of the profit range, wherein the opening is the mask according to item 1 of the profit range, wherein the opening is the mask according to item 1 of the profit range, wherein the opening is the first item The mask described in the above item, wherein the opening is on a wafer. The semi-manufactured process equipment is a type of semiconductor process equipment suitable for adjusting different process parameters to the conductor process equipment. The equipment includes at least: for adjusting process parameters; A mask is provided between the process equipment and the wafer, the mask has an opening that exposes a part of the surface of the wafer; and a mask rotating frame for carrying the mask and making the mask The opening surrounds the wafer, and by changing the relative position of the opening and the wafer, the opening of the mask exposes other surfaces of the wafer. 8 · The semiconductor process equipment described in item 7 of the scope of patent application ’ . |., l896twf.ptd Page 13 1232497 VI. In the scope of the patent application, the process equipment is a dry-cut device. If the semiconductor process equipment described in the seventh scope of the patent application, the right is set to ▼ 円 不 丨Seven " · Among them, the process equipment is an ion implantation plutonium. I 0 · As in the semiconductor process equipment described in item 7 of the patent application scope, the process equipment is an exposure equipment. II. The delta opening in the semiconductor process equipment described in item 7 of the scope of patent application is a fan-shaped opening. 1 2 · The semiconductor process equipment as described in item 7 of the scope of patent application, wherein the 泫 opening is a _ triangular opening. ^ 1 3. The semiconductor process equipment as described in item 7 of the scope of the patent application, wherein the opening is a circular opening. 14. The semiconductor process equipment as described in item 7 of the scope of patent application, wherein the opening is a trapezoidal opening. 15. A method for parameter setting using a part of a surface of a wafer is suitable for setting different parameters on a wafer. The method for using a part f of a wafer for parameter setting includes at least: providing a mask A mask, the mask having an opening; a portion of the surface exposing the wafer in the opening; and changing the relative position of the opening of the mask and the wafer so that the crystal sequentially exposes the crystal , The other surface of the circle. Please refer to > Partial Table of Utilization® as described in / Please refer to Patent Range 15; Setting method ... Include a process equipment to adjust the page 14 4 < | 1896twf.Ptd