TWI232174B - A film of yttrla-alumina complex oxide, a method of producing the same, a sprayed film, a corrosion resistant member, and a member effective for reducing particle generation - Google Patents

A film of yttrla-alumina complex oxide, a method of producing the same, a sprayed film, a corrosion resistant member, and a member effective for reducing particle generation Download PDF

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TWI232174B
TWI232174B TW91114037A TW91114037A TWI232174B TW I232174 B TWI232174 B TW I232174B TW 91114037 A TW91114037 A TW 91114037A TW 91114037 A TW91114037 A TW 91114037A TW I232174 B TWI232174 B TW I232174B
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film
item
oxide
phase
scope
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Hirotake Yamada
Tsuneaki Ohashi
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Ngk Insulators Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11Oxides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An object of the invention is to provide a film of an yttria-alumina complex oxide having a high peel strength of the film to a substrate. A mixed powder of powdery materials of yttria and alumina is sprayed on a substrate to form a sprayed film made of an yttria-alumina complex oxide. Preferably, the powdery material of yttria has a 50 percent mean particle diameter of not smaller than 0.1 mum and not larger than 100 mum, and the powdery material of alumina has a 50 percent mean particle diameter of not smaller than 0.1 mum and not larger than 100 mum. Preferably, the yttria-alumina complex oxide contains at least garnet phase, and may further contain perovskite phase.

Description

12321741232174

【發明所屬之技術領域】 &本發明係關於一種氧化釔—氧化鋁複合氧化 ===,氧化紀-氧化複合氧化物膜,炫射膜 構件及低粒子構件。 獏的製 耐蝕性 【先前技術】 靜、t而要ί級潔淨狀態的半導體製造裝置中,沉積用翁 夺氣俨:二氣體、及潔淨用氣體,係使用氣系氣體、、及氣 ㈡:函糸腐姓性氣體。譬如在熱CVD裝 广[Technical field to which the invention belongs] & The present invention relates to an yttrium oxide-alumina composite oxide ===, an oxide-oxidized composite oxide film, a dazzling film member and a low particle member. Corrosion resistance of plutonium [prior art] In a semiconductor manufacturing device that is in a state of cleanliness that requires a clean state, the deposition gas is used for deposition: two gases, and a cleaning gas, which uses a gaseous gas and a gaseous gas: Letters of rotten name sex gas. For example, in thermal CVD

、、糸腐蝕性虱體所構成的半導體潔淨氣體。此 氣體IK:!階段中,亦將WF6 AH,12等㈣腐餘性 孔驵使用為成膜用氣體。 反岸ί ί二】PVD成膜步驟、或姓刻步驟中’隨化學 iiέ ί ΐ 副生成物將沉積於晶座、電極、胎 面的:m虽通稱「冷壁式」t置的情況時,目為腔壁 面的 >凰度較低,因此在腔壁 積物雖在適當時機下利用,易,儿積隸。该等沉 若沉積物.增加的;= = ΐ進行潔淨處理,但是 率等不良情形發生。 後將*致製程變動或降低良Semiconductor clean gas made of corrosive lice. In this gas IK :! stage, WF6 AH, 12 and other rotten holes are also used as the gas for film formation. Anti-shore ί 2] PVD film formation step, or last name engraving step 'with chemical iiέ' ΐ 副 by-products will be deposited on the crystal seat, electrode, tread: m is generally called the "cold wall" t case Since the degree of cavity wall surface is relatively low, although the accumulation in the cavity wall can be used at an appropriate time, it is easy to use. Such sediments, such as sediments, have increased; = = ΐ cleaned, but adverse conditions such as rate occurred. Will result in process changes or reductions

防止此種粉粒掉落的古、土 躲r eh + ·、备的方法,已知有如對金屬板施行珠 加卫、或玻璃珠等研磨(blast)加工, 精由使表面呈粗糙狀態而提高保持力的方法。The ancient and earthy methods to prevent such powder particles from falling are known as blast processing such as bead guarding or glass beads on metal plates. The surface is made rough Ways to improve retention.

7066-4891-PF(N);Tcshiau.ptd 第5頁 1232174 五、發明說明(2) 【發明内容 【發=欲解決之課題】 的構件广腔體製造裝置用構件(譬如:收容於裝置内 較高耐餘^,且^上,最/形成對鹵氣體或其電浆具 收容於裝署 、λ s 私定狀態的被覆膜。此外,當在 本案申枝:m f腔内壁面上沉積著副生成物時, 中,便有揭:藉由在寺願_'110136號說明書 俾可抑生而:r對自氣體的電聚具較ΐ二'Γ, 點的情況。即,ρ & ^ ^,即便此膜中亦將產生如下問題 龜裂的情況。此可能在炼射膜上產生 產生龜裂龜裂的情況。若出現此種在膜内 粉粒,且將降低對較容易從基板上脫落而產生 產品,“二::r=::r性’因此非屬較佳的 再者,本發明之課題在於提供一 且可長時間穩定使用的低粒子構件。種具沉積物保持力’ 再者,本發明之課題在於 持於表面上’且不易因其而產生由積物可堅固的保 可減少裝置維修保固時間的低粒子;^物所引發的微粉’ 【解決課題之手段】 。7066-4891-PF (N); Tcshiau.ptd Page 5 1232174 V. Description of the invention (2) [Summary of the invention [issue = problem to be solved] Component for a wide-cavity manufacturing device (eg, housed in the device High resistance to ^^, and ^, the top / formation of the halogen gas or its plasma tool is contained in the installation, λ s private state of the coating. In addition, when applied in this case: deposition on the inner wall of the mf cavity When writing the by-products, it was revealed that by the description of the temple wish _'110136 俾 can be suppressed and: r has a relatively large 'Γ' point for the self-gathering of the gas. That is, ρ & amp ^ ^, Even in this film, the following problems will occur. This may cause cracks and cracks on the film. If this kind of powder particles appear in the film, it will reduce the relative ease. The product comes off from the substrate, and "two :: r = :: r" is not a good choice. The problem of the present invention is to provide a low-particle component that can be used stably for a long time. Seed deposits Retention force 'Furthermore, the problem of the present invention is to hold on the surface', and it is not easy to produce the retention force. Low particles with less equipment maintenance warranty time; fine powder caused by materials ’[means to solve the problem].

7066-4891-PF(N);Tcshiau.ptd 第6頁 1232174 五、發明說明(3) 第一態樣的發明係相關藉由將氧化釔粉末與氧化鋁粉 末,混合粉末溶射於基體上,而所形成氧化釔—氧化鋁複 合氧化物所構成的熔射膜之方法。 再者’本發明係依上述方法所獲得的氧化紀—氧化銘 複合氧化物膜。 再者,本發明的氧化釔-氧化鋁複合氧化物膜,係包 含有石權石相之氧化記—氧化鋁複合氧化物,與鈣鈦礦相 之氧化釔-氧化鋁複合氧化物,且經χ線繞射測量所獲得鈣 欽礦相之(420)面的峰值強度yal(420),與石榴石相之 (420 )面的峰值強度YAG(42〇)的比率YAL(42〇)/YAG(42〇)在 0.05以上、且ι·5以下。 再者’本發明之由氧化釔—氧化鋁複合氧化物所構成 的炼射膜,係無長度3 Am以上,寬度〇· 1 以上的龜裂 者。 再者’本發明係具備有:基體與氧化釔—氧化鋁複合氧 化物膜的耐钱性構件,其中氧化釔—氧化鋁複合氧化物係 包含f石榴石相之氧化釔-氧化鋁複合氧化物,與鈣鈦礦 相之氧化釔-氧化鋁複合氧化物,且經χ線繞射測量所獲得 約欽礦相之( 420 )面的峰值強度YAL(42〇),與石榴石相"之 (420 )面的峰值強度YAG(42〇)的比率yal(42〇)/yag(42〇) 0.05以上、且1.5以下。 再者,本發明係具備有··基體與熔射膜的耐蝕性構 件,其中上述熔射膜係由氧化釔-氧化鋁複合氧化物所構 成且無長度3//m以上,寬度〇·ι 以上的龜裂者。7066-4891-PF (N); Tcshiau.ptd Page 6 1232174 V. Explanation of the invention (3) The invention of the first aspect is related to the method of dissolving yttrium oxide powder and alumina powder, and mixing the powder onto the substrate, and Method for forming a thermal spray film composed of yttrium oxide-alumina composite oxide. Furthermore, the present invention is an oxide-oxidized composite oxide film obtained by the above method. In addition, the yttrium oxide-alumina composite oxide film of the present invention comprises the oxide of a stone-stone phase-alumina composite oxide, and the yttrium oxide-alumina composite oxide of a perovskite phase, and The ratio of the peak intensity yal (420) of the (420) plane of the perovskite phase to the peak intensity YAG (42〇) of the (420) plane of the garnet phase obtained by χ-ray diffraction measurement. YAL (42〇) / YAG (42) is 0.05 or more and ι · 5 or less. Furthermore, the spray film made of the yttrium oxide-alumina composite oxide of the present invention is free of cracks having a length of 3 Am or more and a width of 0.1 or more. Furthermore, the present invention includes a money-resistant member including a substrate and an yttrium oxide-alumina composite oxide film, wherein the yttrium oxide-alumina composite oxide is an yttrium oxide-alumina composite oxide containing an f-garnet phase. Yttrium oxide-alumina composite oxide with perovskite phase, and measured by X-ray diffraction measurement, the peak intensity of the (420) plane of the Jochenite phase is YAL (42〇), which is the same as that of the garnet phase. The ratio yal (42〇) / yag (42〇) of the peak intensity YAG (42〇) of the (420) plane is 0.05 or more and 1.5 or less. Furthermore, the present invention is provided with a corrosion-resistant member having a substrate and a thermal spray film, wherein the thermal spray film is made of yttrium oxide-alumina composite oxide, has a length of 3 // m or more, and a width of 0 · ι Above the crackers.

五、發明說明(4) 再者’第二態樣的發 低粒構件,且依下示公j係具備基體與基體上表面層的 積率α為50以上、且7〇〇以斤计。异得的平均單位面積之表面 «=(依氪吸附法的表 。… (cm)) X (表面層總體密户積率(cm2/g)) χ (表面層厚度 本發明者想到並施行 ) 合粉末溶射於基體上,而形=化釔粉末與氧化鋁粉末之混 物所構成的熔射膜。結果^ f由氧化釔-氧化鋁複合氧化 高剝離強度的膜。 ^現可穩定的形成對基體具較 在依此方式所獲得的 拉 中,並未發現顯著的龜妒 釔—氧化鋁複合氧化物膜 即便接觸到腐蝕性物質^對基體的剝離強度亦較高, 外,當對此膜施行熱處理::ί產生剝離或粉粒。此 體的剝離強度,即便在』之::::更加提昇膜對基 件,成功發現可進行微件=後的入處理條 此提昇組件的表面積率孔孔革比車乂 -的多孔質層。藉 著沉積物,並可減少沉積應工固的保持 二態ΐ的發明」,可製造具既定以:::^如後述的「第 二較佳且 態中,氧化紀粉末_平均粒徑為" //m上且1〇〇㈣以下。藉此 勹u· i 加改::腐=物質(㈣系氣體電聚)的且更 者’就攸更加提昇膜對基體的粘著力之觀點而言, 1232174 ""丨 _ 丨__—一 五、發明說明(5) 氧化纪粉末的50%平均粒徑最好在〇· 5 以上,尤以在3 # m以上者為佳。此外,就從更加提昇膜對基體的粘著力之# 觀點而言,氧化釔粉末的5〇%平均粒徑最好在8〇 以 尤以在5 0 # 以下者為佳,更以在丨〇 # m以下者為更佳。 在較佳實施形態中,氧化鋁粉末的5〇%平均粒 二上’且1〇。^以下。藉此便可更加抑制龜裂::〇更1 加改善對腐蝕性物質(如:鹵系氣體電漿)的耐蝕性。更 童仆i ϊ:就從更加提昇膜對基體的粘著力之觀點而t, 乳化鋁柘末的50%平均粒徑最好在〇3“m以上,尤以/ m以上者為佳。此外^ ^ ^ ^ ^ ^ ^ ^ 在3 // ^ ^ 就攸更加提幵膜對基體的粘著力之 :,氧化紀粉末的50%平均粒徑最好在8” , 尤以下者為佳,更以在1()_以下者為更佳。 未存:二==化r…5°%平均粒徑⑽),係當 二次粒子存在弗月况日“更為-次粒子的粒徑,但是當有 _存在的6況時便為二次粒子的粒徑。 是,匕氧化銘粒子的比率並無特別的限制。但 外的第亦可含有除氧化紀粉末與氧化銘粉末以 -氧化鋁複合氧:鉍。λ類第三成分最好屬於對後述氧化釔 致造成不良么者物膜,石權石相、物相之結晶相不 物的石梅石相;;欽;:子!於在氧化記-氧化銘複合氧化 成分。此類成,,礦相中,取代氧化釔或氧化紹之類的 貝战刀,如下所例示。 第9頁 7066-4891-PF(N);Tcshiau.ptd 1232174 五、發明說明(6)V. Description of the invention (4) Furthermore, the second aspect of the invention is a low-granularity structure, and the following formula shows that the product ratio α of the base body and the upper surface layer of the base body is 50 or more, and the weight is 700 kg. The surface of the different average unit area «= (Table according to the adsorption method .... (cm)) X (overall density of the surface layer (cm2 / g)) χ (thickness of the surface layer invented by the inventor) The composite powder is sprayed on the substrate, and the shape is a thermal spray film composed of a mixture of yttrium powder and alumina powder. Results ^ f The film with high peel strength was oxidized by yttrium oxide-alumina composite. ^ Now stable formation of the substrate is better than in the pull obtained in this way, and no significant turtle yttrium-alumina composite oxide film is found even when it comes into contact with corrosive substances ^ The peeling strength of the substrate is also high In addition, when the film is subjected to heat treatment: ί produces peeling or powder particles. The peeling strength of this body, even in the "::::" enhances the membrane to the substrate, and successfully found that the widget can be processed afterwards. The surface area ratio of this component is improved. . By the invention of the deposit, the invention of maintaining the two-state plutonium, which can reduce the deposition stress, can be manufactured with the predetermined "::: ^" in the second preferred state, the average particle size of the oxidized period is " // m and below 100 %. In this way, u · i is modified :: rot = substance (the gaseous polymerization of the system) and more, 'the viewpoint of improving the adhesion of the film to the substrate more In terms of, 1232174 " " 丨 _ 丨 __— 15. Description of the Invention (5) The average particle size of 50% of the oxidized powder is preferably above 0.5, especially above 3 # m. In addition, from the viewpoint of further improving the adhesion of the film to the substrate, the 50% average particle diameter of the yttrium oxide powder is preferably 80 or more, more preferably 50 0 or less, and more preferably # m or less is more preferred. In a preferred embodiment, 50% of the alumina powder has an average particle size of 2 'and 10' or less. By this, cracking can be more suppressed :: 〇1, 1 improves the Corrosion resistance of corrosive substances (such as halogen-based gas plasma). More child-friendly i: From the viewpoint of further improving the adhesion of the film to the substrate, t, 50% of the emulsified aluminum powder is flat. The average particle diameter is preferably at least 0.3 m, particularly preferably at least m. In addition, ^ ^ ^ ^ ^ ^ ^ ^ In 3 // ^ ^, you can improve the adhesion of the film to the substrate: the average particle size of 50% of the oxide powder is preferably 8 ", especially the following, It is more preferable to be below 1 () _. Not existent: two == rr… 5 °% average particle size ⑽), when the secondary particles exist, the "more-secondary particle size" , But when there are 6 conditions, it is the particle size of the secondary particles. However, there is no particular limitation on the ratio of the oxidized particles. However, it may contain oxidized powder and oxidized powder with-alumina complex oxygen: bismuth. The third component of the lambda type is preferably a stone plum stone phase that does not cause any adverse effect on the yttrium oxide described later; the stone phase and the crystal phase of the material phase; Qin; Zizi! Yu compound in the oxidative mind-oxidizing inscription. In this type of mineral phase, shell blades such as yttrium oxide or strontium oxide are replaced as shown below. Page 9 7066-4891-PF (N); Tcshiau.ptd 1232174 V. Description of the invention (6)

La2 03、Pr2 03、Nd2 03、Sm2 03、Eu2 03、Gd2 03、Tb2 03、 〜〇3、Ho2〇3、Er2 03、Tm2 03、Yb2 03、La2 03、MgO、CaO、La2 03, Pr2 03, Nd2 03, Sm2 03, Eu2 03, Gd2 03, Tb2 03, 〜〇3, Ho2〇3, Er2 03, Tm2 03, Yb2 03, La2 03, MgO, CaO,

Sr〇、Zr02、Ce02、Si02、Fe2 03、B2 03。 在熔射混合粉末之際,可直接熔射此混合粉末。或 者’亦可對混合粉末添加枯合劑與溶劑,並利用喷霧乾燥 法進行造粒而熔射造粒粉末。 在熔射混合粉末之際,最好於低壓狀態下進行熔射處 里々此壓力隶好在1 〇 〇 T 〇 r r以下。藉此可更加減少溶射膜 的氣孔’並可更加提升最終膜的耐钱性。 在較佳實施形態中,可對熔射膜施行熱處理,藉此便 可更加提升膜對基體的剝離強度。 此熱處理溫度最好在1 3 〇 〇 為佳。可認為若熱處理溫度到 本體材質與耐蝕膜材質之間產 剝離強度。 C以上,尤以在丨4 〇 〇以上 達1 3 0 0 °c的話,將較容易在 生反應層,結果便提昇膜的 件本體;====特別的限制,僅要屬於不使梢 >、 ,服度的便可,就此觀點而言,最杯y-onnn 以下。若提高熔射膜的熱處理溫度, 時’在-經生成的反應層附近處,;產之 溫度最:在18〇。。。以下。此外,就從抑熱處理 觀點而έ ,最好在1700。(:以下。 、產生龜裂的 本發明的膜係可連續存在於基體表面 必-定要橫跨基體既定面整面連續的形成。譬::括J:未Sr0, Zr02, Ce02, Si02, Fe2 03, B2 03. When spraying the mixed powder, the mixed powder can be directly sprayed. Alternatively, a mixed agent and a solvent may be added to the mixed powder, and the powder may be granulated by spray-drying to spray-granulate the powder. When spraying the mixed powder, it is best to perform the spraying at a low pressure. The pressure is preferably less than 100 T ○ r r. Thereby, the pores of the dissolution film can be further reduced, and the money resistance of the final film can be further improved. In a preferred embodiment, the heat-spraying film can be heat-treated, thereby further improving the peeling strength of the film from the substrate. The heat treatment temperature is preferably 13,000. It is considered that if the heat treatment temperature reaches the peeling strength between the body material and the corrosion-resistant film material. Above C, especially above 1400 and reaching 1 3 0 ° C, it will be easier to generate the reaction layer, and as a result, the body of the film will be improved; ==== special restrictions, as long as it does not make the tip >,, can be served, from this point of view, the most cup below y-onnn. If the heat treatment temperature of the thermal spray film is increased, the temperature is near the reaction layer formed; the production temperature is the highest: 180 °. . . the following. In addition, from the viewpoint of heat treatment suppression, it is best to be 1700. (: The following.) The film system of the present invention that has cracks can continuously exist on the surface of the substrate. It must be formed continuously across the entire surface of a predetermined surface of the substrate. For example: including J: not

1232174 五、發明說明(7) =基if:面上非連續的產生,或形成複數島狀層狀物的情 在的情況:膑亦包括有在基體既定面上點狀存在或分散存 在較佳實施形態中,本發明的膜係實質的無龜裂者, 特別係指無長度3 “ m以上、官声〇 二 種微小龜裂的有益,可利用^度7111以上龜裂的膜。此 1 Z…:了利用知描型電子顯微鏡,依1 0 0 0倍 上的化率硯祭膜而進行確認。 基體的材質並益4i ¢.) ΛΑ iro J. » 對電1容哭:二:Ϊ 制。但是’ ·好未含有可能 于電水谷杰内的製程產生不良 言,最好為:鋁或氮化鋁、氧化;二7^ 此硯點而 合物或固熔體、氧化鍅、氧羊、呂,、軋化釔之化 體。 乳化釔與虱化釔之化合物或固熔 膜對基體的剝離強度係根 , 直徑設定為直徑φ 5· 2mm而進行测旦/ # 亚將粘著面的 基體亦可為多孔質。此外,,、里。 面粗糙度Ra可在1 // m以上,介 土體表面的中心線平均表 外可1 〇 提高膜對基底的粘著性,並 · 2 “ m以上。藉此便可 的現象。 抑制隨膜之剝離而產生粉粒 氧化釔-氧化鋁複合氧化物 譬如可選擇自下示者。 裡頰亚無特別的限制, (1) Y3Al5012(YAG:3Y2〇3 · 5A1 〇 λ 含有氧化紀與氧化铭為3 · 5 2 3 曰曰 結構。 ’ 率’並具有石榴石結 (2) YA103(YAL:Y2〇3 . A1 〇 λ 2 3)。句鈦礦結晶結構。1232174 V. Description of the invention (7) = base if: the discontinuity on the surface, or the formation of multiple island-like layers: 膑 also includes the existence of dots or dispersion on the predetermined surface of the substrate. In the embodiment, the film system of the present invention is substantially non-cracked, and particularly refers to a film having no length of 3 "m or more and two kinds of official cracks. It is possible to use a film with a crack of more than 7111. This 1 Z ...: I used a tracing type electron microscope to confirm the sacrifice film at 1000 times the chemical conversion rate. The material of the substrate is 4i ¢.) ΛΑ iro J. »I ’m crying for electricity 1: Two: Ϊ system. But '· It does not contain any bad words that may be produced in the process of Dian Sui Jie, preferably: aluminum or aluminum nitride, oxidation; 2 ^ This complex point or solid solution, thorium oxide, Oxygen sheep, Lu, and rolled yttrium. The peeling strength of the matrix of emulsified yttrium and yttrium yttrium compound or solid solution film is rooted, and the diameter is set to a diameter of φ 5 · 2mm. The facing substrate can also be porous. In addition, the surface roughness Ra can be more than 1 // m, the surface of the soil body The center line average outer Table 1 billion can improve adhesion to the substrate film, and · 2 "m or more. This can be a phenomenon. Inhibition of powder formation due to film peeling Yttrium oxide-alumina composite oxide For example, the following can be selected. There is no particular limitation on Lichia, (1) Y3Al5012 (YAG: 3Y2〇3 · 5A1 〇λ contains the structure of the oxidized period and the oxidized name is 3 · 5 2 3. It has a "rate" and has a garnet knot (2) YA103 (YAL: Y203. A1 〇λ 2 3). The crystal structure of titanium ore.

12321741232174

〇)Υ4Α 12 02 (ΥΑΜ··2Υ2〇3 · ai2o3)。單斜晶系。 小人在較佳實施形態中,氧化釔—氧化鋁複合氧化物膜至 少含有石榴石相。此外,在較佳實施形態中,氧化釔—氧 化鋁複合氧化物膜係含有石榴石相與鈣鈦礦相。此情況 下,可更加提昇膜對基體的剝離強度,且較不易產生龜 裂。 特別佳者為氧化釔-氧化鋁複合氧化物包含有石榴石 相與鈣鈦礦相,且經X線繞射測量所獲得鈣鈦礦相之(42〇) 面的峰值強度YAL(420 ),與石榴石相之( 420 )面的峰值強 度YAG(420 )的比率(YAL(420 )/YAG( 420 )),在〇·05 以上、 且1 · 5以下。 (YAL(420 )/YAG(420 ))若在0.05以上的話特別佳,或 者在0 · 5以下的話將特別佳。 本發明的膜、及膜與基體間之層積體,具有優越的耐 蝕性,特別係對_系氣體與_系氣體電漿具較高的耐蝕 發揮本發明耐餘性構件之耐蝕性的對象,有如熱CVD 裝置等半導體製造裝置。在此種半導體製造裝置中,採用 由齒素氣體電漿所構成的半導體潔淨氣體。本發明之耐钱 性構件不僅在鹵素氣體電漿中具耐蝕性,即便在混合齒氣 體與氧氣體之氣體的電漿環境中亦具有耐蝕性。此"” 鹵素氣體可例示如:C1F3、NF3、CF4、WF6、BC1等。 再者’第二態樣的發明係提供一種低粒構件,乃具備 有:基體,與基體上表面層的低粒構件,且平均單位面積〇) Υ4Α 12 02 (ΥΑΜ ·· 2Υ2〇3 · ai2o3). Monoclinic system. In a preferred embodiment of the villain, the yttrium oxide-alumina composite oxide film contains at least a garnet phase. In a preferred embodiment, the yttrium oxide-aluminum oxide composite oxide film contains a garnet phase and a perovskite phase. In this case, the peeling strength of the film to the substrate can be further improved, and cracks are less likely to occur. Particularly preferred is a yttrium oxide-alumina composite oxide containing a garnet phase and a perovskite phase, and the peak intensity YAL (420) of the (42) plane of the perovskite phase obtained by X-ray diffraction measurement, The ratio (YAL (420) / YAG (420)) to the peak intensity YAG (420) of the (420) plane of the garnet phase is 0.05 or more and 1.5 or less. (YAL (420) / YAG (420)) is particularly preferred if it is 0.05 or more, or particularly preferred if it is 0.5 or less. The film of the present invention and the laminated body between the film and the substrate have excellent corrosion resistance, and particularly have high corrosion resistance to the _ series gas and the _ series gas plasma. The object which exerts the corrosion resistance of the residual component of the present invention There are semiconductor manufacturing equipment such as thermal CVD equipment. In such a semiconductor manufacturing apparatus, a semiconductor clean gas composed of a tooth gas plasma is used. The money-resistant member of the present invention has corrosion resistance not only in a halogen gas plasma, but also in a plasma environment in which a tooth gas and an oxygen gas are mixed. This "quot" halogen gas can be exemplified as: C1F3, NF3, CF4, WF6, BC1, etc. Furthermore, the second aspect of the invention is to provide a low-granular component, which includes: a substrate, and a low surface layer on the substrate. Granular components and average unit area

7066-4891-PF(N);Tcshiau.ptd7066-4891-PF (N); Tcshiau.ptd

1232174 五、發明說明(9) 之表面積率α為50以上、700以下。 依照此種低粒子構件的話,去所甚 粉沉積於低粒子構件表面上之時= 持於表面層的細孔中’而不易從表面層上掉落崎 果,便可2制隨粉粒的掉落或飛散而所5ί起的$ 並可減少清洗沉積物的時間。 本 平均單位面積之表面積率“係依下式定義。 Ί氧吸附法的表面積率(cmVg))x ( (cm)) X (表面層總體密度(g/cm3)) 千又 表面min ’ 表示表面層之平均單位面積的 衣囬槓丰扣‘之一種。此表面積值譬如可 算出。詳言之,乃意味著在不考慮表面層的:面前= 下’層之表面狀態滑順時的表面層之表面積: 依虱吸附法的表面積率(cmVg)係意味著(平重旦 位⑷的表面積率)。~,表面層在平均單位重下二 此外,若:H 何種程度細微的細孔。 卜右將表面層厚度(cm)乘上表面層她體 面層1平I早位重量的表面積率(cm2/g))乘上(表 (平均單位表面藉表的面本積的重量(g/cm2))的話,便可計算出 以,f 積的表面積率(⑽2/⑽2))。此便“。所 附力,=:m面積1cm2中’具有何種程度的氣體吸 外,所謂總體密度係指重量除。另 伯里里I示以a 3開虱孔與閉氣孔之體 第13頁 7066-4891-PF(N);Tcshiau.ptd 12321741232174 V. Description of the invention (9) The surface area ratio α is 50 or more and 700 or less. According to such a low particle component, when the powder is deposited on the surface of the low particle component = it is held in the pores of the surface layer ', and it is not easy to drop the fruit from the surface layer. Falling or flying away can reduce the amount of time spent cleaning the sediment. The surface area ratio of the average unit area is defined according to the following formula. The surface area ratio of the oxygen adsorption method (cmVg) x ((cm)) X (overall surface layer density (g / cm3)). The average unit area of the layer is a kind of clothes return bar buckle. This surface area value can be calculated, for example. In detail, it means that the surface layer when the surface state of the surface layer is smooth when the surface layer is not considered: front = lower Surface area: The surface area ratio (cmVg) according to the lice adsorption method means (the surface area ratio of flat denier). ~, The surface layer is lower than the average unit weight. In addition, if: H, the degree of fine pores. Bu right multiplies the thickness of the surface layer (cm) by the surface layer, the surface area ratio of her decent layer, the weight of the surface in the early stage (cm2 / g)), and multiplies it by the table (the average unit surface weight of the surface area borrowed by the table (g / cm2)), the surface area ratio (以 2 / 以 2) of the product of f can be calculated. The attached force is the degree to which gas is absorbed by 'in an area of 1 cm2 in m. The so-called overall density refers to the weight divided. In addition, Bury I shows a body with lice holes and closed pores with a 3 7066-4891-PF (N); Tcshiau.ptd 1232174

五、發明說明(10) 積的密度。 猎由將此種平均 计在基體表面 保持於表面層的 就從此觀點而 附著的表面積將 上亦將厚厚的沉 此外,因為表面 面層的保持力亦 置的防吸附板等 參照表3、表4)5. Description of the invention (10) Product density. The surface area adhered from this point of view by holding such an average meter on the surface of the substrate on the surface layer will also be thick. In addition, because of the holding force of the surface layer, see Table 3. Table 4)

S5 早位 上, 開氣 言, 縮小 積, 層的 將變 施行 的情 在本發明中,α必須設定在5 〇以上。 面積之表面積率α屬於較大的表面層 便可將副生成物、粉粒吸附、附著、 孔上,而可抑制粉粒的掉落或飛散。 將α設在1 0 0以上的話將更佳。 當α較小的情況時,因為副生成物可 ’即便副生成物產生量相同,在表面 結果便將導致副生成物較容易掉落。 目苗釘效應將變小,因此副生成物對表 小。α 5 0以上在相較於係利用濺鍍裳 一般研磨修整(後述的比較例C 1、c 2 · 況下,將明顯的偏大。 在此可認為因為即便表面層的平均單位面積之表 =變大,應吸附録或副生成物的表面積理所t然的= ::此在防士粉粒掉落或飛散的觀點上理應具優點。 二疋丄貫際上,若平均單位面積之表面積率α超過7〇〇的 。,得知反將造成微粉的掉落、分散量增加。此乃因為— :ϊ Ϊ700的話’當對表面層施加熱循環時,構成表面广 :陶…將出現微觀的破損,反倒成為微粉源 日 至^。從此觀點而言,α最好在50 0以下’尤以在3〇〇以下: 表面層的開氣孔率最好在10容積% 積%為更佳。藉此便可促進表面層的副 以上,尤以在1 5 生成物或微粉的 容 保In the early stage of S5, open the air, reduce the product, and the layers will change. In the present invention, α must be set to 50 or more. The surface area ratio α of the area belongs to a large surface layer, so that by-products and particles can be adsorbed, adhered, and pores, and the particles can be prevented from falling or scattering. It is more preferable to set α to 100 or more. When α is small, even if the amount of by-products is the same, the on-surface result will cause the by-products to fall more easily. The seedling nail effect will be smaller, so the by-products will be smaller. α 5 0 or more is significantly larger than the case of general polishing and trimming using sputtering (comparative examples C 1 and c 2 described later). This is considered to be because the table of average unit area of the surface layer is even larger. = Becomes larger, the surface area of the appendices or by-products should be taken as a matter of course = :: This should have advantages in terms of preventing powder particles from falling or scattering. In general, if the average unit area is The surface area ratio α is more than 700. It is known that it will cause the fine powder to fall and increase the amount of dispersion. This is because-: ϊ Ϊ700 'When the thermal cycle is applied to the surface layer, the surface is wide: ceramic ... will appear Microscopic damage, on the contrary, becomes the source of fine powder. From this point of view, α is preferably less than 50,000 ', especially less than 300. The open porosity of the surface layer is preferably 10% by volume and more preferably% by volume. .This can promote the surface layer above, especially the storage of 15 products or fine powder.

1232174 五 發明說明(11) 越30容積%的\好,表@\\的開氣孔率在3Q容積%以下。若超 度將降低,^ Λ/Λ 耐錄將降低,且機械強 致產生龜列 表s本身便將成為粉塵產生源,亦將導 ii反而有增加微粉量的傾向。 表面層的開氣孔率血關盔 率/閉氣孔率)最好在10以上。因率的比率(開氣孔 或微粉的保持吸附產生作 將二=未對副生成物 0.05〜5。_。藉由採用此:二“:孔徑為 或微粉對開氣孔率中的保持吸:。了更加促進副生成物 再者’若從其他觀點探討的話, 一 裝置的設計規格具相同者大::係以與應製造 者為佳。 才、·,田孔仏取好在0.05 以上 原因乃因為形成細微溝準的曰圓田达土 在大氣壓下進行保管、搬Ϊ = = Π時依〜環境1 〜或水分。當將此晶圓供應給㈣或成口:;巧渠 的情況時,為確保製成的辑定w 战骠夸下一步驟製毛 中所吸附的$ a、隹彳-@ 〜 便必項將晶圓細微溝i1232174 V Description of the invention (11) The more 30 vol%, the better, the open porosity of table @ \\ is below 3Q vol%. If the overshoot will be reduced, ^ Λ / Λ will be reduced, and the mechanically generated tortoise list s itself will become a dust generation source, which will also increase the amount of fine powder. The surface porosity (open porosity, closed porosity / closed porosity) is preferably 10 or more. The ratio of the ratios (maintaining adsorption of open pores or micropowders will be caused by two = no by-products 0.05 to 5. _. By using this: two ": pore size or micropowder to maintain open pores in open porosity: ... Promote the by-products further, 'If you look at it from another point of view, the design specifications of a device are the same :: It is better to be the same as the manufacturer. The reason why Tian Kongzheng is better than 0.05 is because The micro-ditch that is formed is said to be stored and moved under atmospheric pressure. == Π 时 依 ~ 〜1 ~ or moisture. When this wafer is supplied to ㈣ or into the mouth :; in the case of Qiaoqu, it is Make sure that the edited w is made, and the $ a, 隹 彳-@ ~ that are adsorbed in the next step of the woolen fabric will be finely grooved.

τ尸/r及附的成分進仃脫氣。處理腔的排 統(排氣管大小或氣體流動方式),&可;。㈡:: 脫教之方々、社"% -丄心 。 代細微溝渠中進; 肌乱 < 万式進订设计者乃屬通常狀況。 微溝渠指標的設計規格具相同程度 : 之膜表面上空著的話,亦不致對製程造成不Γ:ί本:Γτ corpse / r and attached components are degassed. Process chamber layout (exhaust pipe size or gas flow mode), &OK;. ㈡ :: Fang 々, she "%-丄 heart. On behalf of the subtle grooves; dyslexia < million styles of designers is a normal situation. The design specifications of the micro-ditch index have the same degree: if the film surface is left empty, it will not cause any damage to the manufacturing process. Γ: ί 本: Γ

五、發明說明(12) 外’因為通常容哭沾 積的觀點而言,:=面積大於晶圓面積’因此就從總面 度,但是最:細孔徑可與設計規格相同程 表面^膜ίΐΪ3生成物或微粉的保持吸附之觀點, 佳。 于在50 以上,尤以00 以上為 制微=生面,對基體的剝離強度’藉此而抑 以下,尤以丄層厚度最好設定在__ 下,ί鉦二:材貝,在目的用途中具有所需耐蝕性的前提 雙槎自:人制。在較佳實施形態中,表面層材質可 ί化物Λ稀土族疋素的氧化物、含鹼土族的氧化物、 反=、亂化物、氣化物、氯化物、合金、該等固溶體、 及混&物等所構成的組群中。更具體而言,可例示如下。 蓳青石(cordierite)、鑽石、氮化矽、氮化鋁、說化 鎮、氟化輕、氟化I呂。 蓳青石係礦物的名稱,具有理論組成 2Mg〇-2Al2〇3-5Si〇2組成,但亦有固熔Fe成分或鹼成分的情 況。嚴密而言,雖為該組成的低溫相名稱,但是通常高、、σ 2:稱之為蓳青石。在此將主要由董青石所構成者當二二 蓳青石係因為在成分中含有Mg〇,因此具優越的耐蝕 性’同時若MgO源採用滑石(礦物名稱,3Mg〇_4Si〇2_H 〇)的 話,因為在熱處理時呈液狀化的滑石將移動於周^ ^子的V. Description of the invention (12) Outside 'Because of the common point of view, the area is greater than the wafer area', so the total surface area, but the most: the pore diameter can be the same as the design specifications. From the viewpoint of keeping adsorption of the product or fine powder, it is preferable. Above 50, especially with 00 or more as the micron = green surface, the peeling strength of the substrate is reduced to the following, especially the thickness of the layer is best set under __, 钲 2: material, for the purpose The premise of having the required corrosion resistance is double: self-made. In a preferred embodiment, the material of the surface layer may be a compound of a rare earth tritium oxide, an alkaline earth oxide, a reverse compound, a chaotic compound, a gaseous compound, a chloride, an alloy, such solid solutions, and In a group of & objects. More specifically, it can be exemplified as follows. Cyanite (cordierite), diamond, silicon nitride, aluminum nitride, chemical town, fluorinated light, fluorinated. The name of the ocherite mineral has a theoretical composition of 2Mg〇-2Al2〇3-5Si〇2, but may also include a solid Fe component or an alkali component. Strictly speaking, although it is the name of the low-temperature phase of this composition, it is usually high, σ 2: it is called ocherite. Here, mainly composed of Dong Qingshi, the two eriocyanite series has excellent corrosion resistance because it contains Mg〇 in the composition. At the same time, if talc is used as the MgO source (mineral name, 3Mg〇_4Si〇2_H 〇) , Because the talc liquefied during the heat treatment will move around the ^ ^

1232174 發明說明⑽--^~ ---— 孔隙中:因此滑石的形體便成為孔隙。藉由選擇滑石 料粒徑或熱處理的條件,便可將α值控制於適當範圍内y 鑽石主要係利用CVD法可在表面上形成膜。因為鑽石 本身具有角錐狀或長方體形狀,因此藉由控制本身的步 狀:大小,便可選擇《值。除此之外,即便預先使Si等金 屬元素混入膜内,然後利用NFg等氟系電漿,僅將金屬元孟 素蝕刻去除,亦可控制α值。當鑽石之情況時,基材印 選擇氮化矽、氮化鋁、s i、碳、氧化鋁。 取 亦可將氮化矽形成表面的細孔構造。譬如,將以y 〇 與Al2〇3為燒結助劑的氮化矽燒結體,在cF4 + 〇2等氣系^3許 中’依1 0 0〜3 0 0 °C施行熱處理的話,因為僅選擇餘刻氮化 石夕,因此便可獲得由Y2〇3-Al2〇3-Si〇2系氧化物、或X鼠 Y - A 1 - S i - N - 0系的氮氧化物所構成的細孔構造。或者,在 KOH:NaOH=l : l(mol比)的30 0 °C溶融鹼中施行熱處理的%, 因為可選擇溶解粒界相,因此可獲得以氮化矽為 a 土體的細 孔構造。 如上述,本案的細孔構造,不僅可利用熔射法,此外 亦可利用凝膠法、PVD、CVD、或從溶液的析出5 ^ 叫久應、漿劑 塗布法等而形成細孔構造。另外,亦可為對表屑# > t w . ^ 9她行蝕刻 處理,而在表層附近形成細孔構造的方法。 特別佳的實施形態係表面層由含釔的化合物所構成。 此類化合物最好為如:氧化釔、含氧化釔的固熔體 入11232174 Description of the invention ⑽-^ ~ ----- In the pores: Therefore, the shape of talc becomes pores. By selecting the particle size of talc or the conditions of heat treatment, the α value can be controlled within an appropriate range. Diamonds are mainly formed on the surface by the CVD method. Because the diamond itself has a pyramidal or cuboid shape, you can choose the value by controlling its own step size: size. In addition, even if a metal element such as Si is mixed in the film in advance, and then a fluorine-based plasma such as NFg is used to remove only the metal element by etching, the α value can be controlled. In the case of diamond, the substrate is printed with silicon nitride, aluminum nitride, silicon, carbon, and aluminum oxide. It is also possible to form a surface pore structure of silicon nitride. For example, if a silicon nitride sintered body with y 〇 and Al 2 O 3 as a sintering aid is heat-treated in a gas system such as cF4 + 〇 2 Xu Zhong 'according to 100 ~ 3 0 0 ° C, because only By choosing the remaining nitride nitride, you can obtain a fine oxide composed of Y2〇3-Al2〇3-Si〇2 series oxide, or X-rat Y-A 1-S i-N-0 series oxide. Hole structure. Alternatively,% of heat treatment is performed in a 30 ° C molten alkali with KOH: NaOH = 1: l (mol ratio). Because the grain boundary phase can be selected for dissolution, a pore structure with silicon nitride as a soil can be obtained. . As described above, the pore structure of the present case can be formed not only by the thermal spray method, but also by the gel method, PVD, CVD, or precipitation from a solution. Alternatively, it is also possible to form a pore structure near the surface layer by performing an etching treatment on the surface chips # > t w. ^ 9. A particularly preferred embodiment is a surface layer composed of a yttrium-containing compound. Such compounds are preferably such as: yttrium oxide, solid solution containing yttrium oxide

化釔的複合氧化物、三氟化釔。具體而言,可例示如a L 化釔、锆-氧化釔固熔體、稀土族氧化物-氧化釔固^體、Compound oxide of yttrium, yttrium trifluoride. Specifically, for example, a yttrium oxide, a zirconium-yttrium oxide solid melt, a rare earth oxide-yttrium oxide solid body,

7066-489l-PF(N);Tcshiau.ptd 第17頁 五、發明說明(14) A12〇3、2Y9〇q 3Υ2〇3、YF3、Y〜A1 -(〇) —F、Y2Zr2〇7、y ai2〇3 ° 2 更佳者乃表面層係由利用將 的混合粉末溶射於基體上,而所形乙粉末與氧化鋁粉末 合氧化物所構成者。故,此表面層所虱化釔-氧化鋁複 一實施態樣之發明中所說明的氧9貝可直接轉用上述第 膜。 、〔氧化紹複合氧化物 即,最好氧化釔粉末的50%平 100 //m以下,氧化鋁粉末的50%平均..1 以上、 100 /ζπ!以下,且炼射膜經施行熱處理過徑Z。0.1 以上二 化釔-氧化鋁複合氧化物膜至少含 "外,最好氧 氧化釔-氧化鋁複合氧化物膜包含石二石,。更佳者乃 且經X線,射測量所獲得鈣鈦礦相之(4 的峰鈦廣相 YAU420 ),與石榴石相之(420 )面 旳嗶值強度 比率 YAL(420 )/YAG(420 )在 0. 05 以上、且j 5度^(。42〇)的 當低粒子構件屬於應曝露於耐腐蝕性物=的情況 時,财腐錄物質可例示如下。π 化物、 氧、氣、氯化硼、chf3、cif3、SFe、Nf3、HBr、TiCl 、 WF6、SiCl4、氫、及該等混合氣體。載送氣體亦有混4合著 He、N2、Ar 的情況。 , 在本發明中’基體材質在相較於表面層材質之下,亦 可具對腐蝕性物質屬於較低耐蝕性者。針斜點 明。如第1(a)圖戶斤*,低粒子構件i係具有形 成於基體2表面2a上的表面層3。從表面層3表面3a朝向基 第18頁 7066-4891.PF(N);Teshiau.ptd 1232174 五、發明說明(15) 體2表面2a連通 體2對開氣孔率。:係開氣孔的内壁面’2b係基 細孔徑。因為:3: = : :1氣孔4係如前述具有較小的 深比較幻的::某種程度的厚度’因此具有細長(寬 i(b) 示若= 广觸腐触性物質的話’便如第 腐敍前的輪靡缘Γ僅/1’而形成實線狀態。虛線係 開氣孔6之内層7之表面7 a遭受腐1虫,就連 豆中,#料盆μ ”基體2之露出面2b亦將遭受到腐蝕。 話(較容率μ對表面層7之姓刻速率的 編號8所示相對較便將從基體2的表面2a產生如元件 前端。相斜於/ 的但是,此孔8係連通於開氣孔6 r , “ ; ,開氣孔6内壁面6 a之蝕刻速率相對性的 果,腐蝕後的開氣孔之扣一 L 、 , J扪欠化、、、口 細長)。此對抑制來自比典幾乎未變’反將變大(變較 頗具優點的構造。谷朱文腐蝕之基體2的粉塵產生上 基體的材質# | 〇 * 對電漿容器内的f程產:限制。但是,最好未含有可能 言,最好為呂或氮化在呂不/影響的元素。就此觀點而 合物或固炫體、氧化_ \乳化紹、氧化1呂與氧化紀之化 體。在特別佳的實施ίΐΓ匕錯與氧化紀之化合物或固炼 氧化釔~ IUb & # ^ 怨中,基體係由氧化鋁、尖晶石、 成。…匕紹设合乳化物、錯、或該等複合氧化物所構 在較佳實施形態中,於形成表面層之後,再對表面層7066-489l-PF (N); Tcshiau.ptd Page 17 V. Description of the invention (14) A12〇3, 2Y9〇q 3Υ2〇3, YF3, Y ~ A1-(〇) —F, Y2Zr207, y ai2 03 ° 2 is more preferably a surface layer composed of a mixed powder obtained by dissolving a mixed powder onto a substrate, and a shaped powder of B and an alumina powder. Therefore, the oxygen 9 shells described in the invention of the yttrium-alumina composite embodiment of this surface layer can be directly transferred to the above-mentioned second film. [The oxide composite oxide is preferably 50% of yttrium oxide powder and 100 / m or less, 50% of alumina powder on average: 1 or more and 100 / ζπ! Or less, and the heat-treated film has been heat-treated. Trail Z. Above 0.1, the yttrium oxide-alumina composite oxide film contains at least " except, preferably, the yttrium oxide-alumina composite oxide film contains two stones. The better one is the X-ray and radiographic measurements of the perovskite phase (peak titanium broad phase YAU420 of 4) and the (420) plane beep value intensity ratio YAL (420) / YAG (420) of the garnet phase. ) Above 0.05 and j 5 degrees ^ (. 42〇) When the low particle member is to be exposed to a corrosion-resistant substance, the material that can be corrupted can be exemplified as follows. π compounds, oxygen, gas, boron chloride, chf3, cif3, SFe, Nf3, HBr, TiCl, WF6, SiCl4, hydrogen, and these mixed gases. The carrier gas may be mixed with He, N2, and Ar. In the present invention, the substrate material may have a lower corrosion resistance to corrosive substances than the surface layer material. The needle is pointed obliquely. As shown in Fig. 1 (a), the low particle member i has a surface layer 3 formed on the surface 2a of the substrate 2. From the surface layer 3 surface 3a toward the base page 18 7066-4891.PF (N); Teshiau.ptd 1232174 V. Description of the invention (15) The body 2 surface 2a communicates with the open porosity of the body 2. : The inner wall surface of the open pores'2b is a base pore diameter. Because: 3: =:: 1 The pores 4 are as described above with a smaller depth. The illusion is: a certain degree of thickness' so it has a slenderness (width i (b), which means that if it is a wide-touch material, then it ’s For example, before the Rotten Margin Γ was only / 1 'and formed a solid line state. The dotted line is the surface 7 a of the inner layer 7 of the open air hole 6 suffered 1 rot, even in beans, # 料 盆 μ The exposed surface 2b will also be subject to corrosion. (Comparative volume ratio μ is shown as number 8 of the surface layer 7 engraving rate, which will be relatively relatively generated from the surface 2a of the substrate 2 as the front end of the component. However, This hole 8 is connected to the open air hole 6 r, "; the relative etch rate of the inner wall surface 6 a of the open air hole 6 is the result of the relative etch rate. . This pair inhibits the structure that is almost unchanged from the code, but will become larger (which has a more advantageous structure. Gu Zhuwen corrodes the dust of the substrate 2 to produce the material of the upper substrate # | 〇 * For the production process in the plasma container: Restriction. However, it is better not to contain elements that may be said, and it is better to be Lv or nitriding in Lv. / In this regard, the compound or solid body, oxygen _ \ Emulsified Shao, oxidation 1 Lu and the oxidized age of the incarnation. In a particularly good implementation ίΐΓ skimmer and oxidized age compounds or solidified yttrium oxide ~ IUb &# ^ In the complaint, the base system consists of alumina, spinel, In a preferred embodiment, after the formation of the surface layer, the surface layer is formed by combining the emulsion, the complex, or the composite oxide.

7066-4891-PF(N);Tcshiau. ptd 第19頁 1232174 五、發明說明(16) 施加壓縮應力 層產生粉塵。 控制表面 別的限制。最 合粉末炫射於 熱處理。上述 變化,因而隨 若再對溶射膜 而更加體積收 乃本發明者所 其他的方 理’特別係應 機械加工亦可 此方法有如熱處理。藉此便可抑制從表面 層平均 好如前 基體上 混合粉 此體積 施行熱 縮,結 發現到 法,可 用選擇 進行α 單位面 述,將 而形成 末因為 變化, 處理之 果便將 的現象 例示如 性腐I虫 值的增 積之表面積率α的方法並無特 氧化紀粉末與氧化鋁粉末的混 炫射膜,其次再對熔射膜施行 在溶射時將反應而使體積產生 便將產生多數個氣孔。然後, 後’再施行結晶相的相變態, 增加開氣孔’而增大α值。此 〇 利用酸性溶液或電漿的蝕刻處 的餘刻處理。即便利用先端的 加控制。 【實施方式】 (實驗Α) 祖& ί備具有表1中所示各平均粒徑(5〇%平均粒徑)的各原 ’二、。其中,在表1中所示的各平均粒徑之中,平均粒 徑二〇·5 、5 "m各氧化釔粒子(譬如:Α卜A3)均屬7066-4891-PF (N); Tcshiau. Ptd page 19 1232174 V. Description of the invention (16) Applying a compressive stress layer generates dust. Control surface other restrictions. The most suitable powder shines in heat treatment. The above-mentioned changes, so that the volume of the film can be further increased as the film is re-applied. The other method of the present inventor's is that it should be machined, and this method can be like heat treatment. In this way, it is possible to suppress the heat shrinkage of the volume from the surface layer as well as the mixed powder on the former substrate. The result is that the method can be used to describe the α unit, which will cause changes in the final cause. The phenomenon will be exemplified. For example, the method of increasing the surface area ratio α of the sexual rot I value does not have a mixed film of special oxidation age powder and alumina powder. Secondly, the melt spray film is subjected to a reaction during dissolution and the volume will be generated. Most air holes. Then, the phase transition of the crystalline phase is performed again, and the pores are increased to increase the value of α. In this case, an acid solution or a plasma etching treatment is used. Even if you use the advanced plus control. [Embodiment] (Experiment A) Zu & A. Each element having an average particle diameter (50% average particle diameter) shown in Table 1 was prepared. Among the average particle diameters shown in Table 1, the average particle diameters of 2 · 5, 5 " m and each of the yttrium oxide particles (for example: AAB A3) belong to

;人粒彳工,其他的氧化記粒子(譬如:A 4〜A 8 )的平均粒徑 9貝;I屬於二:欠粒徑。另,平均粒徑0.1 //m、0.3#m、4//m、 f m各氧化鋁粒子(譬如:A1~A4)均屬於一次粒徑,其他 的氧化鋁粒子(譬如:A5〜A8)的平均粒徑則屬於二次粒徑。 在表1之例A1〜A8中,將氧化釔粒子與氧化鋁粒子依重Human granules, other oxide particles (such as: A 4 ~ A 8), the average particle size is 9 shells; I belongs to two: under particle size. In addition, the average particle diameters of 0.1 a / m, 0.3 # m, 4 // m, and fm alumina particles (such as A1 ~ A4) belong to the primary particle size, and other alumina particles (such as: A5 ~ A8) The average particle size is a secondary particle size. In Examples A1 to A8 of Table 1, the yttrium oxide particles and the alumina particles are weighted.

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五、發明說明(17) 量比5 7. 1 : 4 2 · 9比率進行混合。氧化釔與氧化鋁的莫耳比 率為3 ·· 5。在例A1〜3中,將氧化釔粉末與氧化鋁粉末採用 球磨機進行濕式混合,並利用喷霧乾燥機進行造粒,而择 得平均粒徑40 //m的顆粒。在例A4〜A8中,將氧化釔粉末與 氧化鋁粉末進行乾式混合。 'V. Description of the invention (17) Amount ratio 57.1: 4 2 · 9 ratio is mixed. The molar ratio of yttrium oxide to alumina is 3 ·· 5. In Examples A1 to 3, yttrium oxide powder and alumina powder were wet-mixed by a ball mill and granulated by a spray dryer to select particles having an average particle diameter of 40 // m. In Examples A4 to A8, yttrium oxide powder and alumina powder were dry-mixed. '

準備由尺寸5 0 X 5 0 X厚度2mm的平板狀氧化鋁所構成 的基體(氧化鋁純度99· 7%)。採用速爾賽美的克公司(公司 名,音譯)產製的電漿溶射機,將上述混合粉末電聚溶身于 於基體上。在溶射時,依40升/分流量流動著氬氣,並依 1 2升/分流量流動著氫氣。溶射輸出設定為4 〇 kW,溶射距 離設定為120πιπι。 在例Α9中,僅將氧化記-氧化鋁石榴石粉末(平均粒徑 40 # m),依上述條件電漿溶射於基體上。相關所獲得各例 的膜,實施以下的測量。 & (結晶相的鑑定) 利用X線繞射裝置鑑定結晶相。所以,計算出 Y A L (4 2 0 ) / Y A G ( 4 2 0 )。測量條件如下示。A substrate (alumina purity of 99.7%) made of flat alumina having a size of 50 × 50 × 2 and a thickness of 2 mm was prepared. A plasma dissolver manufactured by Sulcemic Corporation (company name, transliteration) was used to electrolyze the mixed powder onto the substrate. During dissolution, argon flows at a flow rate of 40 liters / minute, and hydrogen flows at a flow rate of 12 liters / minute. The dissolution shot output is set to 40 kW, and the dissolution shot distance is set to 120 μm. In Example A9, only the oxide-alumina garnet powder (average particle size 40 # m) was plasma-sprayed onto the substrate under the above conditions. The obtained films were subjected to the following measurements. (Identification of Crystal Phase) The crystal phase was identified using an X-ray diffraction device. Therefore, Y A L (4 2 0) / Y A G (4 2 0) is calculated. The measurement conditions are shown below.

CuK a 、 50kV 、 300mA 、 2 0=20-70 。 理學電機公CuK a, 50kV, 300mA, 20 = 20-70. Rigaku Electric

使用裝置:旋轉配對陰極型χ線繞射裝置 司產製「RINT」」 、 (剝離強度) 如下示進行測量。 1 ·將成膜後的試料(層積體) 2mm(包含膜厚)的尺寸。Device used: Rotary paired cathode type X-ray diffraction device "RINT" manufactured by the company. (Peel strength) Measured as shown below. 1. The size of the sample (layered body) after film formation is 2 mm (including film thickness).

1232174 五、發明說明(18) 2 ·將裁斷過的試料,利用丙_ 淨。 進订5刀鐘的超音波洗 3·準備附有枯著劑的A1大頭釘 名 音譯)產製)。此粘著區域形 钿铋件尼卡公司(公司 4·在成膜面上粘著大頭釘。y 直极φ 5· 2mm的圓形。 5 ·钻著著試料的大頭釘安壯、 往上拉提直到膜剝落為止。從^具上,並利用自檢器 計算剝離強度(剝離強度=剝^ ^洛時的荷重及粘著面積 時,將在粘著劑部位處剝沒=重/大頭釘粘著面積)。此 (龜裂之有無) 之式料的值視為測量值。 在耐I虫試驗裝置内安壯— 實施。在C12氣體中(關閉:各例的試料,並依其次條件 氣體流量係30 0ccm,载送:二器1將各試料保持2小時。C12 體壓力設定為0· 1 torr,奸氣也(氬氣)流量為100sccm。氣 輸出。相關各試料,測量琪施+加㈣0^、偏壓電壓31〇W的 重量變化。 *露試驗前後的各重量,並計算1232174 V. Description of the invention (18) 2 · The cutting sample shall be made of Cingjing. Order 5 knives for ultrasonic washing 3. Prepare A1 tack with bulking agent (Transliteration). This adhesion area is shaped by a bismuth piece from Nika Corporation (company 4. A tack is adhered to the film-forming surface. Y Straight φ 5.2 mm in a circular shape. 5 • The stud with the sample is strong and upward Pull until the film is peeled off. From the tool, calculate the peel strength using the self-tester (peel strength = peeling load and adhesion area at the time of peeling), it will be peeled off at the adhesive part = weight / big Nail adhesion area). The value of this formula (with or without cracks) is regarded as the measured value. It is robust in the I-resistant test device-implemented. In C12 gas (closed: the sample of each case, and the next Conditional gas flow is 30 0ccm. Carrying: Two devices 1 hold each sample for 2 hours. C12 body pressure is set to 0 · 1 torr, and the gas flow (argon) is 100 sccm. Gas output. For each sample, measure Qi Weight change after applying + 0㈣, bias voltage 31 ° W. * Respective weight before and after the test, and calculate

7066-4891-PF(N);Tcshiau.ptd 第22頁 1232174 五、發明說明(19) 丫2〇3粉末 平均粒徑 (^m) Al2〇3粉末的 平均粒徑 (fim) 峰値強度比 YAL(420)/ YAG(420) 剝離 強度 MPa 龜裂之 有無 耐触試驗 重量增加 mg/hr 其他 A1 0.1 0.1 I 0.000 8 Μ 〆、、、 0.0 A2 0.5 03 0.597 12 Μ 0.0 A3 5 4 0.324 30 Μ 0.0 A4 20 20 0.203 10 Μ 0.0 A5 50 50 0.108 12 Μ 0.1 A6 80 80 0.07 11 Μ y\ι\ 0.1 A7 100 100 0.05 10 Μ 0.1 荼半YAM相 A8 120 120 13 Μ 0.7 A9 僅 YAG 粉末(40μηη) 0.00 3 有 卜12 由 末溶射於基體上,在溶射膜内並未發現有鈣鈦礦相。但 是,剝離強度比較低,可發現龜裂,且耐蝕試驗後的重量 增加亦較大。在A1〜A8中溶射混合粉末,其剝離強度較 大,且亦未發現龜裂。特別係若將氧化釔粉末粒徑設定為 〇/心100_,將氧化銘粉末粒徑設定為〇 3_~1〇〇_ =特=強度將在1〇MPa以上’且無觀察到龜裂,❹ 吝ίΑ8中’氧化記粉末與氧化紹粉末的粒徑 Ϊ的=,亚Λ ΑΜ相。在Αδ中,剝離強度雖設為比較 (實二卻將發現耐钱性將降低若干。 針對例Α1〜Α9的各例被霜絲 小時大氣中施行熱處理。Λ材科針f 1 500 下,於3 實驗A相同的評估 、、灸針對各例的膜,進行如同 汁怙結果如表2所示。7066-4891-PF (N); Tcshiau.ptd Page 22 1232174 V. Description of the invention (19) The average particle size of Ya 2 03 powder (^ m) The average particle size of Al 2 0 3 powder (fim) Peak-intensity ratio YAL (420) / YAG (420) Peel strength MPa Cracking resistance test Weight increase mg / hr Other A1 0.1 0.1 I 0.000 8 Μ 、, 0.0 0.0 A2 0.5 03 0.597 12 Μ 0.0 A3 5 4 0.324 30 Μ 0.0 A4 20 20 0.203 10 Μ 0.0 A5 50 50 0.108 12 Μ 0.1 A6 80 80 0.07 11 Μ y \ ι \ 0.1 A7 100 100 0.05 10 Μ 0.1 YAM phase A8 120 120 13 Μ 0.7 A9 YAG powder only (40 μηη) 0.00 3 Youbu 12 was sprayed on the substrate from the end, and no perovskite phase was found in the spray film. However, the peel strength was relatively low, cracks were found, and the weight increased after the corrosion resistance test. The mixed powder was spray-sprayed in A1 to A8, and its peeling strength was large, and no crack was found. In particular, if the particle size of yttrium oxide powder is set to 0 / core 100_, and the particle size of oxidized oxide powder is set to 0_3 ~~ 100__ = special = strength will be above 10 MPa 'and no cracks are observed, ❹ The particle size of the 'oxidation record powder and the oxide powder in ΑΑ8 is , =, sub Λ ΑM phase. In Δδ, although the peel strength is set to be comparative (the second one, it will be found that the money resistance will be slightly reduced. For each of the examples A1 to A9, the heat treatment is performed in the atmosphere when the frost silk is small. 3 Experiment A The same evaluation, moxibustion was performed on the membrane of each case, and the results were as shown in Table 2.

1232174 五 '發明說明(20) 【表2】 丫2〇3粉末的 平均粒徑 (幽 ΑΙ2Ο3粉末的 平均粒徑 (j^m) 熱處理溫度 CC) 峰値強度比 YAL(420)/ YAG(420) 剝離 強度 MPa 龜裂之 有— ΓΟ,、、、 耐蝕試驗 重量增加 mg/hr B1 0.1 0.1 ~1500~ 0.000 3 有 07 B2 0.5 0.3 1500 0.206 43 m 0.0 B3 5 4 1500 0258 48 Μ 0.0 B4 20 20 1500 0.653 52 Μ 0.0 B5 50 50 1500 0.996 45 Μ 0.1 B6 80 80 1500 1.257 48 無 0.1 B7 100 100 1500 1.385 45 Μ 0.1 Βδ 120 120 H 1500 1.516 40 Μ 0.8 "Β9 僅丫AG 粉末(40μιτ〇 1500 0.00 3 有 1.0 由表2中得知,在例B9中,在溶射膜内並未發現有約 鈦礦相。但是,剝離強度比較低,可發現龜裂,且耐蝕試 驗後的重量增加亦較大。在B1〜B8中溶射混合粉末,其剝 離強度較大,且亦未發現龜裂。其中,在B丨中,於熱處理 後’觀察到剝離強度的降低與龜裂。特別係若將氧化紀粉 末粒徑設定為0· 5 /zm〜100 ,將氧化鋁粉末粒徑設定為 〇· 3 /zm〜100 //m的話,剝離強度將非常高至4〇〇MPa以上, 且無觀察到龜裂。 在B4〜B8中,在熱處理後,yal相的峰值強度將明顯的 增加。此傾向特別在B 6、B 7、B 8中更為明顯。在b 8中,雖 峰值強度比YAL(420 )/YAG( 420 )超過1.5,但是並未發現龜 裂’剝離強度並沒有如何的降低。但是,耐餘後的重量增 加將變大。此可認為乃隨膜之結晶相的不同所致。 如上所述’依照本發明的話,可提供_種膜對基體之 剝離強度較咼的氧化紀-氧化紹複合氧化物膜。1232174 Five 'invention description (20) [Table 2] The average particle diameter of YA 2 03 powder (average particle diameter of ΑΑΙ02 03 powder (j ^ m) heat treatment temperature CC) peak intensity ratio YAL (420) / YAG (420 ) Peeling strength MPa There is cracking — Γ〇 ,,,,, and corrosion resistance test weight increase mg / hr B1 0.1 0.1 ~ 1500 ~ 0.000 3 Yes 07 B2 0.5 0.3 1500 0.206 43 m 0.0 B3 5 4 1500 0258 48 Μ 0.0 B4 20 20 1500 0.653 52 Μ 0.0 B5 50 50 1500 0.996 45 Μ 0.1 B6 80 80 1500 1.257 48 None 0.1 B7 100 100 1500 1.385 45 Μ 0.1 Βδ 120 120 H 1500 1.516 40 Μ 0.8 " B9 YA AG powder only (40 μττ1500 0.00 3 There is 1.0 It is known from Table 2 that in Example B9, no about titanite phase was found in the dissolution film. However, the peel strength is relatively low, cracks can be found, and the weight increase after the corrosion resistance test is also large. The spray-mixed powders in B1 ~ B8 have large peel strength and no cracks were found. Among them, in B 丨, the decrease in peel strength and cracks were observed after heat treatment. Especially if the oxidation age The particle size of the powder is set to 0.5 / zm ~ 100, and the alumina powder particles are When the diameter is set to 0.3 / zm to 100 // m, the peel strength will be very high above 400 MPa, and no cracking is observed. In B4 to B8, the peak strength of the yal phase after heat treatment will be Significant increase. This tendency is particularly evident in B 6, B 7, and B 8. In b 8, although the peak intensity is more than 1.5 than YAL (420) / YAG (420), no cracking or peeling is found. The strength does not decrease. However, the weight increase after the endurance will increase. This can be considered to be due to the difference in the crystalline phase of the film. As described above, according to the present invention, a kind of film can be provided to the substrate. The peeling strength of the oxide-shao oxide composite oxide film is relatively high.

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五、發明說明(21) (貝驗例c) 在Γ 1 λ這表I表4中所示實驗例c 1〜c 1 6的各構件。其中, 修整,質氧化銘燒結體’利用#80磨粒進行研磨 片。在工為約400㈣厚度,而形成自立膜試驗 150 0 V τ、隹—,使平均粒徑4〇以1"的YAG粉末在1 60 0 °C或 利用#δ〇 仃^結,而獲得各燒結體。然後’將各燒結體 2用# 8。磨:進行研磨修整,其协 又 而形成自立膜試驗片。 ㈣Η在C16-中,分別在長15〇隨、寬15〇随、厚5_的基 ’如同貫驗A般的形成溶射膜。然後,將在實驗 4、C8〜16中所獲得的溶射膜施行熱處理。針對各試驗 片,分別測量上述峰值強度比、剝離強度、龜裂之有無、 耐蝕試驗結果、氣孔率、氪吸附法的表面積率(CM /g)、 平均膜厚、α、水銀擠入容積、細孔徑、粉粒數量。V. Description of the invention (21) (Bei test example c) Each component of the experimental examples c 1 to c 1 6 shown in Table I and Table 4 in Γ 1 λ. Among them, the trimmed, sintered body with a high quality oxide was polished with # 80 abrasive particles. A thickness of about 400 ㈣ is used to form a self-supporting film test of 150 0 V τ, 隹 —, and the average particle size of the YAG powder is 40 ° C at 1 60 0 ° C or by using # δ〇 仃 ^ 结. Sintered body. Then, each sintered body 2 is # 8. Grinding: Grinding and dressing are performed to form a self-supporting film test piece. CIn C16-, a solvent-ejecting film is formed on the basis of a length of 150 °, a width of 15 °, and a thickness of 5 ′, as in A. Then, the spray coatings obtained in Experiment 4 and C8 to 16 were heat-treated. For each test piece, the above-mentioned peak intensity ratio, peeling strength, presence or absence of cracks, corrosion resistance test results, porosity, surface area ratio (CM / g) of the rubidium adsorption method, average film thickness, α, mercury intrusion volume, Fine pore size and powder number.

Kr法的表面積率係採用Kr氣體吸附多點bet法。表面 層的總體面積設定為4 g / c m3。 (水銀擠入容積、細孔徑) 採用水銀播入式孔度計測量孔隙尺寸1 n m〜2 〇 〇 # m範 圍。因為細孔仕有分布’因此在表4中記載主峰值存在的 直徑範圍。水銀的表面張力值採用485erg/cm2,接觸角採 用130 ° 。 (氣孔率) 利用阿基米得法求取。針對C7〜C16,從利用相同方法 所求得的表觀比重與總體比重,確認到氣孔真正的由開氣The surface area ratio of the Kr method is the Kr gas adsorption multi-point bet method. The total area of the surface layer is set to 4 g / c m3. (Mercury squeeze-in volume, pore size) The mercury pore size porosimeter was used to measure the pore size in the range of 1 n m to 2 # 0 # m. Because the pores have a distribution ', Table 4 describes the diameter range in which the main peak exists. The surface tension of mercury is 485erg / cm2, and the contact angle is 130 °. (Porosity) Calculated by Archimedes' method. For C7 ~ C16, from the apparent specific gravity and the overall specific gravity obtained by the same method, it is confirmed that the pores are truly opened by gas.

7066-4891-PF(N);Tcshiau.ptd 第25頁 1232174 五、發明說明(22) 孔所構成。 (粉粒數量) 將使用於比較例C1中的氧化鋁粉35g,懸浮於 100〜lOOOcc純水中,然後在於其中浸潰C1〜C16的各試料之 後,於大氣中、1 2 0 °C下進行乾燥。重複此項操作直到變 成懸浮為止’藉此而使幾乎整量沉積於試驗片上。再將表 面層塗敷面朝向下側的狀態下,施加5 0次的室溫〜2 0 0 °C熱 循環,然後計數設置於下方S i晶圓上的粉粒數目。 【表3】 雛 丫2〇3粉未的 平均粒徑 (㈣ ai2〇3粉未的 平均粒徑 (Am) 熱處理 CC) 峰値強度比 YAL(420)/ YAG(420) 剝離 強度 (MPa) 龜裂之 有無 C1 比較例 燒結氧化雜 硏廳整 — 20 1S00t 下 ms 0 — 無 C2 比較例 燒結YAG 硏廳整 僅YAG粉未 (40 ym) isoot 下 ms 0 — 無 C3 比較例 燒結YAG 僅YAG粉未 (40 pm) 15001 下 ms 0 — 無 C4 比較例 YAG合成粉 熔討 僅YAG粉未 (卿m) 1600^0 0 4 有 C5 赁施例 混合粉培射 20 20 無熱處理 0.243 10 無 C6 赁施例 混合_射 20 20 無熱處理 0.210 10 無 C7 «施例 混合粉链射 20 20 無熱處理 0.195 11 無 C8 «施例 混合_射 20 20 1400 0.597 23 無 C9 «施例 混合_射 20 20 1400 0.541 19 無 C10 實施例 混合粉懷射 20 20 1400 0.553 30 無 C11 «施例 混合粉ί容射 20 20 1600 0備 52 無 C12 實施例 混合粉培射 20 20 1600 0.784 57 無 C13 實施例 混合粉培射 20 20 1600 0.792 53 無 C14 «施例 混合粉培射 50 50 1600 0.732 80 無 C15 赁施例 混合粉姥射 50 50 1600 0.718 62 無 C16 赁施例 混合_射 50 50 1600 0.696 87 無7066-4891-PF (N); Tcshiau.ptd Page 25 1232174 V. Description of the invention (22) Hole. (Number of powder particles) 35 g of alumina powder used in Comparative Example C1 was suspended in 100 to 1000 cc of pure water, and then each sample of C1 to C16 was impregnated therein, and then in the air at 120 ° C Allow to dry. This operation is repeated until it becomes suspended ', whereby almost the entire amount is deposited on the test piece. With the surface coating side facing downward, a 50-cycle thermal cycle from room temperature to 200 ° C was applied, and the number of particles set on the lower Si wafer was counted. [Table 3] The average particle size of the young 203 powder (㈣ ai203) (the average particle diameter of the heat treatment (Am) heat treatment CC) Peak intensity ratio YAL (420) / YAG (420) peel strength (MPa) Cracked with or without C1 Comparative Example Sintered Oxidation Complex — 20 1S00t at ms 0 — No C2 Comparative Example Sintered YAG Punch Only YAG Powder (40 ym) isoot ms 0 — No C3 Comparative Example Sintered YAG YAG Only Powder (40 pm) 15001 ms 0 — No C4 Comparative Example YAG Synthetic Powder Discussion Only YAG Powder (Qing m) 1600 ^ 0 0 4 With C5 Lease Example Mixed Powder Spraying 20 20 Without Heat Treatment 0.243 10 Without C6 Lease example mix _ shot 20 20 without heat treatment 0.210 10 without C7 «example mix powder chain shot 20 20 without heat treatment 0.195 11 without C8« example mix _ shot 20 20 1400 0.597 23 without C9 «example mix _ shot 20 20 1400 0.541 19 No C10 example mixed powder shot 20 20 1400 0.553 30 No C11 «example mixed powder shot volume 20 20 1600 0 preparation 52 no C12 example mixed powder shot 20 20 1600 0.784 57 no C13 example mixed Powder training 20 20 1600 0.792 53 without C14 «Example mixed powder training 50 50 1600 0. 732 80 None C15 Rental Example Mixed Powder Shot 50 50 1600 0.718 62 None C16 Rental Example Mixed Shot 50 50 1600 0.696 87 None

7066-4891-PF(N);Tcshiau.ptd 第26頁 1232174 五、發明說明(23) L少 耐触試驗 重量增加 mg/hr 氣孔率 % 平均 膜厚 (_ 表囱 積率 a 水銀擠入 容積_ 細孔徑 範圍 粉粒數量 C1 比較例 47 <1 28 400 4 一 多數 C2 比較例 0.0 <1 9 400 1 一 多敍 C3 比較例 1.3 10 9,317 400 1,491 0.08-2.5 多數 C4 比較例 1.0 4 710 60 17 0.004-4 多數 C5 實施例 0.0 5 1,173 123 58 0.05-8 200 Μ C6 實施例 0.0 6 1,191 212 101 0.05-8 50個 C7 寳施例 0.0 5 1J57 430 199 0.05-8 50個 C8 實施例 〇."〇 11 1,256 99 50 0.05-8 〇個 C9 實施例 0.0 13 1J92 196 33 0.05-8 一〇個 C10 實施例 0.0 13 1,183 408 193 0.05-8 0個 C11 寳施例 0.0 18 1,333 110 59 0.05-14 〇個 C12 實施例 0.0 I 17 1,304 194 101 0.05-14 0個 C13 賨施例 0.0 18 1,298 417 217, 0.05-14 〇個 C14 實施例 0.0 17 1,382 111 61 0.2-20 〇個 C15 實施例 0.0 16 1,370 220 121 02-20 〇個 C16 實施例 0.0 16 1,404 406 228 02-20 〇個7066-4891-PF (N); Tcshiau.ptd Page 26 1232174 V. Description of the invention (23) L less touch resistance test weight increase mg / hr porosity% average film thickness (_ table volume ratio a mercury squeezed volume _ Pore size range Number of particles C1 Comparative example 47 < 1 28 400 4 One majority C2 Comparative example 0.0 < 1 9 400 1 One more C3 Comparative example 1.3 10 9,317 400 1,491 0.08-2.5 Most C4 Comparative example 1.0 4 710 60 17 0.004-4 Most C5 examples 0.0 5 1,173 123 58 0.05-8 200 μC6 examples 0.0 6 1,191 212 101 0.05-8 50 C7 treasure examples 0.0 5 1J57 430 199 0.05-8 50 C8 examples 〇. &Quot; 〇11 1,256 99 50 0.05-8 0 C9 examples 0.0 13 1J92 196 33 0.05-8 10 C10 examples 0.0 13 1,183 408 193 0.05-8 0 C11 treasure examples 0.0 18 1,333 110 59 0.05-14 0 C12 examples 0.0 I 17 1,304 194 101 0.05-14 0 C13 賨 Examples 0.0 18 1,298 417 217, 0.05-14 0 C14 examples 0.0 17 1,382 111 61 0.2-20 0 C15 examples 0.0 16 1,370 220 121 02-20 0 C16 examples 0.0 16 1,404 406 228 02-20 0

在Cl、C2中,因為屬於密緻質燒結體,因此並無微粉 保持能力’多數微粉將從燒結體上掉落於晶圓上。在C 3 中’因為YAG燒結不足’因此α將變得非常大。此乃因為 燒結不足,而存在多數細微開氣孔的緣故所致。此情況Among Cl and C2, since they are dense sintered bodies, they have no fine powder holding ability. Most of the fine powders will fall from the sintered body onto the wafer. In C 3 'because YAG is insufficiently sintered', α becomes very large. This is due to insufficient sintering and the existence of most fine pores. This situation

下’在熱循環後,微粉反將多數掉落。在C 4中,表面層 α將變小,微粉將多數掉落。所謂多數大概指“MO個/ 以上。在本發明例的c 5〜c 1 6中,抑制微粉掉落於晶圓上 特別在C8〜C16中最佳。此可認為氣孔率大sC5〜C7的緣赵 所致。就剝離強度觀點而言,cu〜Cl6特別佳。 f f發明實施例中,C5〜C16均屬於將氧化釔粉末與 銘粉末的混合粉末,進行炫射而產生溶射膜。在⑵、Down 'After the heat cycle, the fine powder will drop most of them. In C 4, the surface layer α will become smaller and the fine powder will mostly fall. The so-called majority probably refers to "MO number / more. In c 5 to c 1 6 of the present invention, the suppression of fine powder on the wafer is particularly best among C8 to C16. It can be considered that the porosity is large sC5 to C7 Caused by Zhao. From the standpoint of peel strength, cu ~ Cl6 is particularly good. Ff In the examples of the invention, C5 ~ C16 are all mixed powders of yttrium oxide powder and Ming powder, which are dazzled to produce a dissolution film. In ⑵ ,

7066-4891-PF(N);Tcshiau.ptd 第27頁 1232174 五、發明說明(24) 6、7中,因為並未施行熔射膜的熱處理,因此氣孔率低於 1 0 %。在C 8〜C1 6中,施行熱處理的結果,氣孔率將上升, 並超過1 0 %。 另外,在實驗C5〜16中,上述峰值強度比在0.05〜1.5 範圍内,剝離強度較高,且未發現龜裂。 (實施例C17) 將粒徑1 0 // m滑石、溶融石英、及粒徑2 5 // m氧化鋁原 料,利用曱基纖維素與水進行混練而形成漿狀。將此漿狀 物塗布於如同C4〜C16的長160mm、寬150mm、厚5mm之氧化 鋁基材上,其次在大氣中、1 4 0 0 °C下施行熱處理。重複此 步驟數次’而形成平均厚度120 /zm的蓳青石層。供計算j 值的總體密度採用2.0g/cm3。 剝♦強度為3 6 Μ P a ’且未發現龜裂。耐钱試驗重量增 加-0· 3mg/小時。氣孔率21%。平均膜厚120 //m。α值 1 3 9。水銀擠入容積〇 · 1 〇 2 c c / g。細孔徑範圍1 - 4 0 // m。微 粉數量0個。 (實施例C18) 當鑽石之情況時,將基材設定為氮化矽。製法係在粒 徑約1 // m的α型氮化矽粉末中,添加5mol%之丫2〇3與5mol0/〇 之/3型氮化矽並經混合後,在氮氣環境中,於1 8 5 0 °C下施 行密敏化。基材形狀如同C1 7。在此基材上,利用/微波CVD 法形成約5 0 // m厚度的鑽石膜。在基材周圍上配置著石英 玻璃,並於鑽石膜中混入S i與氧。其次,將基材溫度設定 在15 0〜3 0 0 °C範圍的狀態下,曝露於NF3 + Ar混合氣體的下7066-4891-PF (N); Tcshiau.ptd Page 27 1232174 V. Description of the Invention (24) 6.7, because the heat treatment of the thermal spray film is not performed, the porosity is less than 10%. In C 8 to C 16, as a result of the heat treatment, the porosity will increase and exceed 10%. In addition, in experiments C5 to 16, the above-mentioned peak intensity ratio was in the range of 0.05 to 1.5, the peeling strength was high, and no crack was found. (Example C17) A talc with a particle size of 10 // m, fused quartz, and an alumina raw material with a particle size of 2 5 // m were kneaded with amidine cellulose and water to form a slurry. This paste was coated on an aluminum oxide substrate having a length of 160 mm, a width of 150 mm, and a thickness of 5 mm, such as C4 to C16, followed by a heat treatment in the air at 1,400 ° C. This step was repeated several times' to form an obsidian layer having an average thickness of 120 / zm. The overall density used to calculate the value of j is 2.0 g / cm3. The peeling strength was 36 M Pa 'and no crack was found. The weight resistance test increased by -0.3 mg / hour. The porosity is 21%. The average film thickness is 120 // m. Alpha value 1 3 9. Mercury was squeezed into a volume of 0.12 c c / g. Fine pore size range 1-4 0 // m. 0 fine particles. (Example C18) In the case of diamond, the substrate was set to silicon nitride. The production method is to add αmole silicon nitride powder with a particle size of about 1 // m, add 5mol% of Ya2O3 and 5mol0 / 〇 / 3 of silicon nitride, and mix them in a nitrogen atmosphere at 1 Dense sensitization at 8 5 0 ° C. The shape of the substrate is like C1 7. On this substrate, a diamond film with a thickness of about 50 m is formed by a / microwave CVD method. Quartz glass is arranged around the substrate, and Si and oxygen are mixed in the diamond film. Next, set the temperature of the substrate in the range of 150 to 300 ° C and expose it to a mixture of NF3 + Ar gas.

7066-4891-PF(N);Tcshiau.ptd 第28頁 1232174__ 五、發明說明(25) 流式電漿中1 0小時,而形成細孔構造。供計算α值的總體 -密度採用2.0g/cm3。 剝離強度為14MPa,且未發現龜裂。耐蝕試驗重量增 ^ 加0 . 0 m g /小時。氣孔率1 0 %。平均膜厚5 0 // m。α值5 3。微 粉數量0個。 如上述,依照本發明的話,沉積物可堅固的保持於表 面上,藉此便可提供不易產生隨沉積物而引發微粉的低粒 子構件。7066-4891-PF (N); Tcshiau.ptd Page 28 1232174__ V. Description of the invention (25) The pore structure was formed in the flow plasma for 10 hours. For the calculation of the alpha value, the overall density is 2.0 g / cm3. The peeling strength was 14 MPa, and no crack was found. The weight of the corrosion test was increased by ^ plus 0.0 mg / hour. The porosity is 10%. The average film thickness is 5 0 // m. Alpha value 5 3. 0 fine particles. As described above, according to the present invention, the deposit can be firmly held on the surface, thereby providing a low-particle structure which is less prone to generate fine powder due to the deposit.

7066-4891-PF(N);Tcshiau.ptd 第29頁 12321747066-4891-PF (N); Tcshiau.ptd Page 29 1232174

7066-4891-PF(N);Tcshiau.ptd 第30頁7066-4891-PF (N); Tcshiau.ptd Page 30

Claims (1)

91114037 ?3 牟 f 3 Μ π 91114037 ?3 牟 f 3 Μ π 申請專利範圍 1. 六 種氧化釔-氧化鋁複合氧化物膜之製造方 1 特徵在於冑氧:匕釔粉末與氧化㈣末的混合粉末溶射於、 體上’以形成氧化釔—氧化鋁複合氧化物所構成 、土 膜。 耵 2 ·如申請專利範圍第i項之方法,盆中誃 的50%平均粒徑係〇」以上、1〇〇 以下二,…刀末 3士如申請專利範圍第】項或第2項之方法,#中該 鋁粉末的50%平均粒徑係〇.1 _以上、100/zm以下/ 4.如申請專利範圍第】項或第2項之方法,其 射膜施行熱處理。 t Μ您 5·如申請專利範圍第丨項或第2 纪-氧化一銘複合氧化物係至少含有石權石相,中該乳化 申靖6專利? η紀-乳化紹複合氧化物膜’其特徵在於依 申°月專利乾圍第1項或第2項之方法所製得。 行熱7處ΐ申請專利範圍第3項之方法’其中對該溶射膜施 銘複8合項之方法,其中該氧化記-氧化 切你主)含有石榴石相。 <» 申請9專:複合氧化物膜,其特徵在於依 軛固弟8項之方法所製得。 物膜,i中申未H耗11第6項之氧化紀—氧化紹複合氧化 /、τ木具长d/zni以μ 、营〇 ί 11 l 士 乂上 見◦•Ivm以上的龜裂。 物膜,其中^6項,氧化i氧化銘複合氧化 人 、’氧化鋁複合氧化物膜,係包含有石91114037? 3 Mou f 3 Μ π 91114037? 3 Mou f 3 Μ π Application for patent scope 1. Manufacturing method of six kinds of yttrium oxide-alumina composite oxide film 1 Characterized by radon oxygen: a mixture of yttrium powder and ytterbium oxide The powder is sprayed on the body to form a soil film composed of yttrium oxide-alumina composite oxide.耵 2 · If the method of item i of the patent scope is applied, the average particle size of 50% of 誃 in the basin is above 0 ″, below 100,…. Method: The average particle diameter of 50% of the aluminum powder in # is above 0.1 mm and below 100 / zm / 4. If the method according to item [2] or item 2 of the scope of patent application, the shot film is heat treated. t Μ5. If you apply for the scope of the patent application item 丨 or the 2nd period-Oxidation Yiming composite oxide system contains at least the stone right phase, in which the emulsification application patent 6? η-emulsification composite oxide film 'its It is characterized by being manufactured according to the method of item 1 or item 2 of the patent application. The method of applying the third item in the patent application No. 7 method is to apply the method of the 8th item to the dissolution film, wherein the oxidation-oxidation-cutting method includes the garnet phase. < »Application No. 9: Composite oxide film, which is characterized by being prepared according to the method of item 8 of the conjugate. The material film, the oxidation period of the 6th item in the application of i-H in the 11th-composite oxide oxidation /, τ wooden tool length d / zni in μ, camp 0 ί 11 l Taxi See ◦ • Ivm cracks. Material film, of which ^ 6 items, oxide i oxide composite oxide, ’alumina composite oxide film, including stone 1232174 _案i虎91114037_年月曰 铬_ 六、申請專利範圍 榴石相與鈣鈦礦相,且經X線繞射測量所獲得該鈣鈦礦相 之( 420 )面的峰值強度YAL( 420 ),與該石榴石相之( 420 )面 的峰值強度YAG( 420 )的比率YAL( 42 0 )/YAG( 42 0 )在〇· 〇5以 上、且1. 5以下。 1 2·如申請專利範圍第1 〇項之氧化釔—氧化鋁複合氧化 物膜’其中該氧化釔—氧化鋁複合氧化物膜,係包含有石 權石相與詞鈦礦相,且經X線繞射測量所獲得該妈鈦礦相 之( 420 )面的峰值強度YAL(42〇),與該石榴石相之(42〇)面 的峰值強度丫人0( 420 )的比率丫八1(42 0 )/¥人6( 420 )在0.05以 上、且1 · 5以下。 1 3 · —種氧化釔—氧化鋁複合氧化物膜,其特徵在於包 含,石權石相之氧化釔—氧化鋁複合氧化物,與鈣鈦礦相 之氧化記—氧化鋁複合氧化物,且經X線繞射測量所獲得該 葡欽礦相之(420 )面的峰值強度yAL( 420 ),與該石榴石相 之(42〇)面的峰值強度YAGU20)的比率YAL(420 )/YAG(420 ) 在0.05以上、且ι·5以下。 1 4·如申請專利範圍第1 3項之氧化釔-氧化鋁複合氧化 物膜’其中未具長3#πι以上、寬0.1/zm以上的龜裂。 1 5·如申請專利範圍第丨3項或第丨4項之氧化釔-氧化鋁 複合氧化_物膜,其中利用熔射法而形成。 1 6·種溶射膜,其特徵在於由氧化釔-氧化鋁複合氧 所構成的溶射膜,乃未具長3上、寬〇 上的龜裂。 1 7·如申請專利範圍第1 6項之熔射膜,其中該氧化釔-1232174 _ 案 i 虎 91111437_ 年月 月 Chromium_ 6. The scope of patent application for the garnet phase and perovskite phase, and the peak intensity YAL of the (420) plane of the perovskite phase obtained by X-ray diffraction measurement 420), and the ratio YAL (42 0) / YAG (42 0) to the peak intensity YAG (420) of the (420) plane of the garnet phase is not less than 0.5 and not more than 1.5. 1 2. The yttrium oxide-alumina composite oxide film according to item 10 of the scope of the application patent, wherein the yttrium oxide-alumina composite oxide film includes a stone right phase and a titania phase, and is subjected to X The ratio of the peak intensity of the (420) plane of the aluminite phase to the peak intensity of the (420) plane obtained by line diffraction measurement is 0 to the peak intensity of the (42) plane of the garnet phase. (42 0) / ¥ person 6 (420) is 0.05 or more and 1 · 5 or less. 1 3 · A yttrium oxide-alumina composite oxide film, comprising: a yttrium oxide-alumina composite oxide of a stone right phase; and an oxidation record of a perovskite phase-alumina composite oxide; and The ratio YAL (420) / YAG of the peak intensity yAL (420) of the (420) plane of the lacinite phase to the peak intensity (YAGU20) of the (42〇) plane of the garnet phase obtained by X-ray diffraction measurement. (420) is 0.05 or more and ι · 5 or less. 14. The yttrium oxide-alumina composite oxide film 'according to item 13 of the scope of patent application, wherein there is no crack with a length of 3 # m or more and a width of 0.1 / zm or more. 1 5. If the yttrium oxide-alumina composite oxide film of item 丨 3 or item 4 of the scope of patent application is applied, it is formed by the spray method. 16. A type of dissolution film, which is characterized by a dissolution film composed of yttrium oxide-alumina composite oxygen, without cracks in a length of 3 and a width of 0. 17 · The thermal spray film according to item 16 of the application, wherein the yttria- 1232174 修正 案號 91114037 一· 六、申請專利範圍 氧化紹複合氧化物係包含有石榴石相與鈣鈦礦相,且經X 線繞射測量所獲得該鈣鈦礦相之(4 2 〇 )面的峰值強度 YAL(420),與該石權石相之(420)面的命值強度yag(42〇) 的比率丫人以420 )八人0( 420 )在〇.〇5以上、且15以下。 18. —種耐蝕性構件,其特徵在於具備有:基材、及氧 化釔-氧化鋁複合氧化物膜的耐蝕性構件,其中 该虱化釔-氧化鋁複合氧化物膜係包含有石榴石相盥 鈣鈦礦相,且經X線繞射測量所獲得該鈣鈦礦相之(42〇)/面 的峰值強度YAL( 420 ),與該石榴石相之(42〇)面的峰值強 度 YAGU20)的比率 YAl(420 )/YAG(42〇)在 〇〇5 以上、且 15 以下。 · 19. 如申請專利範圍第18項之耐蝕性構件,其中 長3#m以上、寬以上的龜裂。 /、 苴由二如申明ί利範圍第1 8項或第1 9項之耐餞性構件, ^。“乳化妃一氧化铭複合氧化物膜係利用溶射法而形 2:如申請專利範圍第18項或第19項之耐蝕性 其中該氧化紀—氧介叙菇人备 τ WOMPa以上。 複5乳化物膜對該基體的玻璃強度 22如申請專利範圍第2〇項之耐姓性 化釔-氧化鋁複合夤卟铷赠 丁 ,、T 4乳 上。 乳化物膜對該基體的玻璃強度在lOMPa以 ^ + 23· 一種耐蝕性構件,其特徵在於具備美 射膜的耐蝕性構件,其中 、·土 熔 τ θ蝽射膜係由虱化釔-氧化鋁複 第33頁 7066-4891-PFl(N).ptc 1232174 茶號 91114似丫 六、申請專利範圍 以上的龜 合氧化物構成,且未具長3 //m以上、寬〇.1 “爪 裂。 2 4 ·如申請專利範圍第2 3項之耐蝕性構件,其中該氧 化釔-氧化鋁複合氧化物係包含有石榴石相與鈣鈦礦相, 且經X線繞射測量所獲得該鈣鈦礦相之(4 2 〇 )面的峰值強度 YAL(420 ),與該石榴石相之( 42 0 )面的峰值強度yag( 42 0 ) 的比率YAL( 420 )/YAG( 420 )在0· 05以上、且ι· 5以下。 25 ^如申請專利範圍第23項或第24項之耐蝕性構件, 其中該氧化釔-氧化鋁複合氧化物膜對該基體的玻璃 在lOMPa以上。 又 26·如申請專利範圍第18、19、23、24項中任一項之 ,其係可曝露於*素氣體或画素氣體電衆中的 耐餘性構件。 叫 其係可曝 〇 其係可曝 2 7 ·如申請專利範圍第2 〇項之耐蝕性構件, 露於齒素氣體或_素氣體電漿中的耐蝕性構件 ^ 28·如申請專利範圍第21項之耐蝕性構件, 其係可曝 露於_素氣體或_素氣體電聚中 • 29· Μ請專利範圍第_之耐綠構構件件 路於_素軋體或_素氣體f漿中的耐則生 與基 ㉟Λ “種低粒子構件,其特徵在於具備有·美體 體上表面層的低粒構件, ·土體 且,::公式所計算得的α為50以上、且70 0以下· «二(依氪吸附法沾主s(U 0 U下, (cmh y f矣品麻,/去的表積率(Cm2/g)) X (表面声戽声 Um))X (表面層總體密度(g/cM)), 、衣甶層尽度1232174 Amendment No. 91114037 I. VI. Patent application scope The oxide oxide composite oxide system contains a garnet phase and a perovskite phase, and the (4 2 0) plane of the perovskite phase is obtained by X-ray diffraction measurement. The peak intensity YAL (420), and the ratio of the life value intensity yag (42〇) of the (420) face of the stone right stone to 420) Eight people 0 (420) is above 0.05 and 15 the following. 18. A corrosion-resistant member, comprising: a substrate and a corrosion-resistant member of a yttrium oxide-alumina composite oxide film, wherein the yttrium-alumina composite oxide film system includes a garnet phase Wash the perovskite phase, and obtain the peak intensity YAL (420) of the perovskite phase (42 °) / plane by X-ray diffraction measurement, and the peak intensity YAGU20 of the (42〇) plane of the garnet phase ) The ratio YAl (420) / YAG (42) is not less than 0.05 and not more than 15. · 19. For example, the corrosion-resistant member of the scope of patent application No. 18, which has cracks of 3 # m or more in length and width. /, 苴 by the two as stated in the scope of the 18th or 19th range of the refractory components, ^. "Emulsified Fei oxide composite oxide film is shaped by dissolution method 2: if the corrosion resistance of item 18 or 19 of the scope of patent application is applied, where the oxidation period-oxygen is described above, τWOMPa or more. Compound 5 Emulsification The glass strength of the film to the substrate is 22, such as the surname-resistant yttrium-alumina composite porphyrin, and T 4 emulsion. The emulsion film has a glass strength of 10 MPa to the substrate. ^ + 23 · A corrosion-resistant member, which is characterized by a corrosion-resistant member with an aesthetic film, in which the earth melting τ θ 蝽 film is made of yttrium-aluminum oxide, page 33, 7066-4891-PFl ( N) .ptc 1232174 Tea No. 91114 resembles a turtle turtle oxide above the scope of the patent application, and does not have a length of more than 3 // m and a width of 0.1 "claw cracks. 24. The corrosion-resistant member according to item 23 of the patent application range, wherein the yttrium oxide-alumina composite oxide system includes a garnet phase and a perovskite phase, and the perovskite is obtained by X-ray diffraction measurement The peak intensity YAL (420) of the (4 2 0) plane of the mineral phase, and the ratio YAL (420) / YAG (420) to the peak intensity yag (42 0) of the (42 0) plane of the garnet phase are at 0 · 05 or more, and ι · 5 or less. 25 ^ The corrosion-resistant member according to item 23 or item 24 of the scope of patent application, wherein the yttrium oxide-alumina composite oxide film is 10 MPa or more to the glass of the substrate. 26. If any one of items 18, 19, 23, and 24 of the scope of application for a patent, it is a surplus-resistant member that can be exposed to a pixel gas or a pixel gas. It can be exposed. It can be exposed. 27. For example, the corrosion-resistant member of the patent application No. 20, the corrosion-resistant member exposed in the tooth gas or plasma gas plasma ^ 28. Corrosion-resistant components according to item 21, which can be exposed to _ prime gas or _ prime gas electro-polymerization • 29 · M, please refer to the green scope of the patent scope _ plain rolling body or _ prime gas f slurry Nai Zesheng's "low-particle member" is characterized by having a low-grain member on the surface layer of the body, and the soil body: The α calculated by the formula is 50 or more and 70 or less. · «Second (according to the adsorption method) (under U 0 U, (cmh yf 矣 麻 麻, / go surface area ratio (Cm2 / g)) X (surface acoustic noise Um)) X (overall surface layer Density (g / cM)) 1232174 t 號 911]4的1 申請專利範圍 其中該表面層係由·人從, 族的氧化物、碳化物、氮3稀土族元素的氧化物、含驗土 該等固炼體、及混合物等氣化物 '氯化物、合金、 的。 4組群中所選擇出的材質所構成 31 ·如申请專利範 開氣孔率係10容積%以上 Ί構件,其中該表面層的32.如申請專利r丄:御以下。 表面層之開氣孔率盥閉气"、或弟31項之構件,其中該 率)係10以上。/、乳孔率的比率(開氣孔率/閉氣孔 3 3 ·如申請專利簕 表面層之主要門5 ^圍弟30項或第31項之構件 34.如申的孔徑係U5〜5”m。 表面層膜厚係;項或㈣ 夺如申請專利範圍第30項或第31項之檨杜 表面層係由含釔夕几人、 X昂6 i孭炙構件 Μ 1 + 合物所構成。 表面層係含 37·如申往直y〜虱化鋁稷a氧化物0 低粒子構件係可曝露轨圍第30項或第31項之構件,其中該 較於該表面層材質^ ^、蝕性物質中者;該基材材質係相 率。 、 ,對該腐蝕性物質具有較大蝕刻速 件俜專利範圍第36項之構件,其中該低嫌 仟係了曝路於腐蝕性 γ这低粒子構 面層材質之下,對# &貝中者,该基材材質係相較於該表 對該腐蝕性物質具有較大蝕 年 a 其中該 其中該 其中該 其中該 7066-4891-PFl(N).ptc 第35頁 1232174 六、申請專利範圍 直號 91114037 修正1232174 t No. 911] 1 of the scope of the patent application, wherein the surface layer is composed of a group of oxides, carbides, nitrogen 3 rare earth element oxides, solidified bodies including test soil, and mixtures, etc. Gases' chlorides, alloys, etc. The material selected in the 4 groups is composed of 31. · As for the patent application, the porosity is more than 10% by volume. The Ί member, of which the surface layer is 32. As the application for patent 丄: the following. The open porosity of the surface layer is a component of the closed air ", or the item of item 31, in which the rate) is 10 or more. / 、 Ratio of milk porosity (open porosity / closed porosity 3 3 · As the main door of the patent application 簕 surface layer 5 ^ the 30th or 31st member of the perimeter 34. The pore size of Rushen is U5 ~ 5 ”m The thickness of the surface layer; the surface layer or the surface layer, such as the 30th or 31st in the scope of the patent application, is composed of yttrium-containing materials, X Ang 6 i 孭 member M 1 + composition. The surface layer contains 37 · As applied to the aluminum oxide 稷 a oxide 0 low particle components can expose the 30th or 31st component of the rail, which is more than the material of the surface layer ^ ^, etch The material of the base material is the phase ratio. The component that has a large etching speed for the corrosive material (item 36 of the patent scope), where the low susceptibility is exposed to the corrosive low Below the material of the particle facet layer, the material of the base material has a larger erosive year to the corrosive substance compared to the table, which is # 7066-4891-PFl (N) .ptc Page 35 1232174 VI. Patent application scope No. 91114037 Amendment 質係3南9素\^^利^圍/38項之構件,其中該腐银性物 乳體或鹵素氣體電漿。 基^由圍f3Q項或第31項之構件,其中該 複合氧化物等之.二鋁、尖晶石、氧化釔、锆、或該等 4 物寺之中的材質所構成。 選擇自.心:專=:第=之構件,其中該基材係由 物等之中的材質所: 成乳化纪、錯、或該等複合氧化 由利4用2·將”請專利範圍第35項之構件’其中該表面層係 上,而弗=化,粉末與氧化鋁粉末的混合粉末溶射於基體 膜。y的氧化釔~氧化鋁複合氧化物所構成的熔射 由利4用3請專利範圍第41項之構件’其中該表面層係 上,而开Ϊ化釔粉末與氧化鋁粉末的混合粉末溶射於基體 =。而形成的氧化t氧化純合氧化物所構成的溶射體 44.如申請專利範圍第41項之 末的50%平均粒徑係〇·^以上、1〇〇_ί 乙粉 太的二Ϊ If專利範圍第44項之構件’其中該氧化紹粉 末的5(U平均粒徑係0. 1 以上、1〇〇 以下。 46. 如申請專利範圍第44項之構 經施行熱處理。 ,、甲為峪耵膜係 47. 如〃申請專利範圍第44項之構件,其中該氧化釔—氧 化铭複5氧化物係至少含有石榴石相。The germ line is a component of the 3-9% / ^^^ / 38 item, wherein the rotten silver substance is a milk body or a halogen gas plasma. The base ^ is composed of a member surrounding item f3Q or item 31, in which the composite oxide is composed of materials such as aluminum, spinel, yttrium oxide, zirconium, or these four materials. Select from the heart: special =: the first component, where the substrate is made of materials such as: Emulsification, Wrong, or these composite oxidation by Li 4 use 2 · will "Please patent No. 35 The component of the item 'where the surface layer is used, and the powder is mixed, and the mixed powder of powder and alumina powder is dissolved and sprayed on the base film. The member of the scope item 41, wherein the surface layer system is a mixed powder of yttrium yttrium powder and alumina powder is sprayed on the matrix =. The formed oxide 44 is composed of a homogeneous oxide of oxidized t. The 50% average particle size at the end of item 41 of the patent application range is more than or equal to 0, 〇__ the second element of the second powder If the item of the 44th scope of the patent 'where the 5 (U average) of the oxide powder The particle size is 0.1 or more and 100 or less. 46. If the structure in the scope of the application for the patent No. 44 is subjected to heat treatment,, A is a film system 47. If the structure in the scope of the 44 application for the patent, This yttrium oxide-oxide complex 5 oxide system contains at least a garnet phase. 7066-4891-PFl(N).pt 第36頁 12321747066-4891-PFl (N) .pt p. 36 1232174 48 •如申咕專利乾圍第47項之構件,苴 化鋁複合氧化物係包含右rs如命力τ 〒該乳化紀-乳 . 3有石榴石相與鈣鈦礦相,且經X線 繞射測量所獲得該鈣鈦礦相之(4 2 0 )面的峰值強度 、 以下 YAU 42 0 ),與該石榴石相之( 42 0 )面的峰值強度Y^G(42〇) 的比率YAL(420)/YAG(420)在0.05以上、且丨又48 • As the component of the 47th patent in Shengu's patent, the aluminum oxide composite oxide system contains the right rs such as the life force τ 〒 the emulsification period-milk. 3 There are garnet phase and perovskite phase, and the X-ray Ratio of the peak intensity of the (42 2) plane of the perovskite phase, YAU 42 0 below) to the peak intensity Y ^ G (42〇) of the (42 0) plane of the garnet phase, obtained by diffraction measurement. YAL (420) / YAG (420) is above 0.05, and again 第37頁Page 37
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