TWI231595B - Substrate structure integrated with passive component - Google Patents

Abstract

A substrate structure for assembled semiconductor integrated with at least a passive component is proposed, wherein the substrate structure includes a plate with an upper surface and a bottom surface in opposition to the upper surface, and a plurality of passive components provided on at least either surface of the plate. Also, the plate is able to provide with a plurality of recesses corresponding to the passive components, and is able to receive at least an electronic element in the recesses. Furthermore, a heat sink is provided to the plate for improving the dissipating performance and electrodes are provided on the same surface or different surfaces of the passive components. And an insulating layer formed with a circuit structure can be provided on the plate. By this arrangement, the substrate structure for assembled semiconductor can be made into a module form so as to achieve desired electrical design.

Description

1231595 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a semiconductor carrier board structure capable of supporting passive components, and more particularly to a carrier board that integrates and houses most passive components in a semiconductor structure. Modular structure. [Previous Technology] With the vigorous development of the electronics industry, electronic products have gradually entered the direction of multi-function and high-performance R & D. In order to meet the high accumulation degree of semiconductor devices (

Integration) and miniaturization (Miniaturization) packaging requirements, capacitors and other passive ball grid arrays to seek 'the density of electronic components and electronic circuits on semiconductor devices must be highly integrated'. It is necessary to integrate, for example, resistive elements (Capacitors) and inductors (Passive components) on the semiconductor device. ‘Either the flip chip type (BGA), Or semiconductor devices based on wire bonding are usually formed with patterned conductive lines on the surface of the substrate, and then passive components for eliminating noise or electrical compensation are added to the substrate before packaging. The passive components are electrically connected to the semiconductor wafer, so that the packaged semiconductor wafer meets the requirements of electrical characteristics. The conventional conventional technology is to place the passive components on a substrate and not occupied by the semiconductor wafer. In the area of extra layout, such as US Patent Nos. 5, 6 9 6, 0 3, 5, 9 0 5, 6 3 9 and 6, 3 2 0, 75 7 etc. Shi mode. U.S. Patent No. system using such a high-density multi-wafer interconnects (High density multichip interconnect, HDMI) as the plate member sandwiched

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ι · ι Page 6 1231595 V. Description of the invention (2) (Interposer), the HDMI board is sandwiched between the passive component (or active component) and the integrated circuit. It is implemented by using the substrate area with a layout panel carrying a substrate of a passive printed circuit board. This will increase the high performance requirements of the entire conductor package, increasing the number of passive components on the substrate surface, forcing the complexity of the package. . Do not attach it to the substrate, which not only causes complexity with the process, but also makes the heterogeneity 'uneconomical. When one is damaged, the increase in the manufacturing cost of the entire device and the product's moving element hinder the substrate and most of the welding systems. The placement of additional substrates outside the area where the passive component placement sheets are placed will reduce the substrate surface The position of the pad will cause these passive layout restrictions and it will be further filled with U.S. Patent Nos. 5,683, 928 and i between multi-layer circuit board layers. Because of this layout element, it must be added as a general product. Therefore, the package size of the substrate with a larger size needs to be larger. As the number of semi-passive components will relatively accommodate most semiconductor wafers at the same time and increase in volume, it will also make the process more. At the same time, these passive components are divided into A and circuit layout (Routabi 1 ity) overall packaging process If it has a larger number of times, if the passive components and substrates are scrapped and cannot be used, it will lead to reliability problems. At the same time, in order to avoid problems such as the electrical connection between the connected terminals, it is transmitted to the corner position of the substrate or the semiconductor crystal area. However, the flexibility of the layout of the passive components is limited, and the number of Hui components is limited in consideration of the layout. In order to avoid the need for ^ shrinking ^ circuit board space on the surface of the circuit board, it is also recommended to place membrane passive components, such as

1231595 V. Description of the invention (3) 1 055, 15 No. 1 and so on revealed that in the multi-layer circuit board manufacturing process, Yu J, first screen-printed on the surface of an organic insulating layer, Guangcheng-new stack resist etching (Photoresist- etching), etc. 4 and / or light. The method of forming a passive passive element is formed by the temple method. Although the placement of the membrane-shaped passive components between the layers can avoid the problem of layout restrictions on the surface of the board: the board is not installed because the passive components are installed. For the circuit, the hybrid, the same demand as the resistance value of the electric power $ i $ shipping day, so for not = stacking the multilayer circuit board = to :::: The integration method that must be reset will make the substrate Integral = a passive component of this kind | large complexity and not cost-effective 冓 U requires a relatively process, ": ΐ: ίThe current trend of electronic products requiring multi-function and high electrical properties Under the trend of accumulation, the current density of semiconducting sub-circuits is extravagant. How can this not be met in the near future-clothing and electronics and electronic devices to enhance electronics? Semiconductor package, single: electrical functions, circuit layout and manufacturing cost and inventory cost [Abstract] κ Feng Mu is an issue that needs to be solved. In view of the above-mentioned conventional technology, it can provide a passive passive device. Yuan Feng Dao = Ming Zhi The main purpose is to integrate the structure with multiple load-bearing plates in a simple process, and use it to directly form a carrier substrate for semiconductor fabrication and the fabrication process of semiconductor substrates. 4. Description of the invention (4)-The passive component is connected to provide electrical design requirements for carrying semiconductors. Another object of the present invention is to provide a semiconductor carrier board structure capable of supporting passive components that can save manufacturing costs. The present invention Another object is to provide a semiconductor carrier board capable of supporting passive components which can increase the flexibility of the circuit layout of the semiconductor package substrate. In order to achieve the disclosure and other purposes, the semiconductor carrier board structure capable of supporting passive components of the present invention The system includes: a support plate having an upper surface and a relatively lower surface; and a plurality of passive elements, which are arranged on any surface of the support plate and formed with electrodes for conduction. A heat sink is connected to the lower surface to provide better heat dissipation efficiency. The semiconductor carrier board structure is modularized to provide electricity for semiconductors. The requirements are set according to the ancient requirements. 5 Passive components can be remotely adhered to any surface of the support plate or Cavity on the surface of the passive component, or sintered passive components. Materials and any method of directly forming a passive component, forming a passive component on any surface of the support plate or a recess on the surface. The electrodes formed on the passive component can be optionally located on the same side of the surface of the passive component. Or different sides, depending on the type of the passive element and the way in which the type of passive element is arranged on the support plate. In the case of ceramic passive components, the ceramic passive components can be attached on the surface. An adhesive layer adheres to the support plate, or adheres to the support plate in a sintered manner. When the support plate is a metal material T, the ceramic-type passive element may be provided on any surface of the support plate or Xi ^

] 7405 全懋 .ptd Page 9 1231595 V. Description of the invention (5)-In the recess of the surface, the electrodes formed on the passive element can be selected on the same side or different sides of the surface of the passive element; when the support When the plate is a ceramic support plate, the ceramic passive component can be set in any surface or recess on the surface of the support plate, but since the ceramic support plate cannot conduct electricity, the electrodes of the ceramic passive component can only be selected Located on the same side of the surface of the passive element. In the case of a wafer-type passive component, the wafer-type passive component can be adhered to the support plate by an adhesive layer formed on the surface. When the support plate is made of any metal or ceramic material today, the wafer-type passive element can be provided on any surface of the support plate or a recess on the surface. In the case of a passive component that directly forms the passive component material to the aforementioned support plate, the passive component may be provided on any surface of the support plate or a recess on the surface. When the passive element material is to be formed directly on the surface of the support plate, 'a layer of passive element material can be coated' or by means of Sputtering, Electroplating, or Chemical Vapor Deposition, etc. The passive component material is deposited on the support plate, and a required passive component is formed on the support plate by a patterning process; of course, the passive component material can also be directly formed in the recess of the support plate. Wherein, when the supporting plate is made of metal, the electrodes on the passive element can be formed on the same side or different sides of the surface of the passive element. When the supporting plate is made of ceramic, only the passive plate can be selected. The same side of the component surface. '' Alternatively, an insulating layer may be formed on the supporting board on which the passive components are connected, and a patterned circuit is formed in the insulating layer, so that the patterned wire ^ can be electrically connected to the supporting board. Electrode of the passive component

1231595 V. Description of the invention (6) Electrical design requirements for supporting semiconductors. In addition, at least one opening may be formed in the insulating layer for receiving electronic components such as semiconductor wafers. The support board can optionally have an opening for carrying electronic components formed therein, and a heat dissipation element can be connected to the surface without the passive element, so that the semiconductor carrier board can adjust its position by the passive element on the support board. Provides electrical design for carrying semiconductors, and provides better heat dissipation efficiency of semiconductor devices through this heat sink, effectively improving the electrical and heat dissipation functions of semiconductor devices. Since the semiconductor carrier board structure capable of supporting passive elements in this case only needs a simple process, the passive element can be set in the semiconductor carrier board capable of supporting passive elements. In this way, passive components can be directly formed on the semiconductor carrier board to provide the electrical design requirements for carrying the semiconductor, and combined with the related supporting board and packaging processes, there will be supporting boards and electronic components that form passive elements, With the combination of heat dissipation components, not only can existing technologies such as Buiid_up or Lamination be used to stack one or more layers of circuit structures. Structure.

Therefore, the semiconductor carrier board structure that can accommodate passive components in this case has a simple manufacturing process and can simultaneously eliminate the need for manufacturing substrates and packaging processes to cooperate with the formation of passive το 'to solve the lack of known technology and simplify the process. It can save the manufacturing cost and increase the flexibility of the circuit layout of the semiconductor package substrate. The following is a description of specific embodiments of the present invention through specific embodiments.

17405 Quan 懋 .ptd Page 1 1231595 V. Description of the invention (7), those skilled in the art understand other advantages of the present invention Specific embodiments are implemented based on different viewpoints and should be modified and changed. [Embodiment] The following examples are not limited to any single point of view and are not based on the actual size. Please refer to the semiconductor carrier board diagrams in Figures 1A to 1 for the relative lower surface first. The passive component 1 3 5 including the support plate 11 1 1 a is placed on the support plate 11 and the table component 13 is placed on the support plate. The content and the effect can be easily revealed by the contents disclosed in this manual. The present invention may also have other different behaviors or applications, and various details in this specification may also be used to carry out various systems without departing from the spirit of the present invention to further explain the viewpoint of the present invention in detail, but also the scope of the present invention. In addition, the drawings of the present invention are merely dimensional descriptions, that is, they do not reflect the relevant structure. Figure 1G is a schematic cross-sectional view of the first embodiment of the passive component structure 1 of the present invention. As shown in FIG. 1A, a supporting plate 11 has an upper surface 11 3 and, as shown in FIG. 1B, the supporting plate structure 1 mainly includes a plurality of supporting plates 11 and a plurality of surfaces provided on the supporting plate 11 of course. The passive component 13 is not limited to the setting surface 11a, and it can also lib the lower surface of the passive support plate 11 according to actual needs. As shown in FIG. 1B, the passive component 1 3 that has been prepared is selected to be directly adhered to the support plate 11. The passive component 1 3 can be a surface-mounted technology (SMT) passive component or a wafer-type passive component. The material of the support plate may be metal or ceramic. In this embodiment, the passive element 13 can be selected as a passive element 13 such as a capacitor, a resistor, or an inductor, and is fixed by, for example, a surface bonding technology.

17405 懋 .ptd Page 12 1231595 V. Description of the invention (8) It is set on the upper surface 11 a of the support plate 11. As shown in the figure, the passive element 13 and the support plate 11 are adhered to each other with an adhesive layer 15. An electrode is formed on a surface of the passive element 13 that is not adhered to the support plate 11. 1 3 a 〇 Although the electrode 1 3 a formed on the upper surface of the passive element 13 (that is, the surface not bonded to the support plate 11) is taken as an example in this embodiment, the electrode 1 3 a is formed on the same side surface of the passive element 13, but it should be noted that when the support plate 11 is a metal support plate, the electrodes 1 3 a on the passive element 13 may be optionally formed on The same side or different sides of the surface of the passive element 13; when the material of the support plate 11 is ceramic, only the same side of the surface of the passive element 13 can be selected. Therefore, the electrodes 1 a may also be formed on different side surfaces of the passive element 13 instead of being limited to those described in this embodiment. In addition, as shown in FIG. 1C, a ceramic-type passive component 13 is selectively connected to the support plate 11. The material of the support plate may be metal or ceramic, and the passive component 13 may be selected such as A low temperature cofired ceramic (LTCC) technology, a high temperature sintering method, or other appropriate technology and sintering (Fus e) are formed on the upper surface 1 1 a of the support plate 1 1. Furthermore, in this embodiment, the passive component material can also be directly formed on the side support plate 1 1 ', wherein the material of the support plate may be metal or Taurman, and the passive component 1 3 is selected to be provided on the support plate 1 1 on the surface 1 1 a. When the passive element material is to be directly formed on the upper surface 1 1 a of the support plate 1 1, a layer of passive element material may be coated on the upper surface 1 1 a of the support plate 1 1

17405 全懋 .ptd Page 13 1231595 V. Description of the invention (9) After the 'passive components' are formed by a patterning process such as exposure, etching or laser trimming 1 3 on the support plate 1丨 the upper surface 11 a °, and when the support plate 丨 丨 is a metal support plate, the electrode 1 3 a on the passive element 13 can be formed on the same side or different sides of the surface of the passive element 13 ; When the supporting plate 11 is ceramic, it can only be selected on the same side of the surface of the passive component 13. 1. The passive component 1 3 is a passive component material that can be selected from resistive, capacitive or inductive materials. If the passive element 3 is an electric 2 ^ piece, then use a remote system such as silver powder (S i 1 ver ρ 〇wder) or 'carbon particles (Carbon part i cl e) dispersed in the resin, ruthenium oxide (Ru ^) 'Spread with glass powder in a binder (Binder) and then solidify to form /, or such as nickel-chromium (Ni-Cr), nickel-phosphorus (Ni-P), nickel-tin (Ni-Sn) ", chromium Resistive materials such as aluminum (Cr-A1) and titanium nitride (TaN) alloys are deposited on the upper surface of the support plate 丨 丨 a. If the passive element 13 is a capacitor element, a dielectric capacitor material selected from a group having a large dielectric constant may be used. Such high-dielectric capacitor materials are made of polymers such as yanbazi materials, ceramic materials, ceramic powders, and the like. They may be, for example, barium titanate (β arium — titanate), osmium titanate L '(Lead -Zirc0nate —titanate), amorphous hydrogenated carbon, or its powder is dispersed in a binder (Binder) or barium strontium titanate to form a thick film capacitor material or chemical vapor phase Deposition (CVD) forms a thin film electrical material on the upper surface 1 1 3 of the support plate 1 1. If the passive element 13 is an inductive element, first a magnetic film is formed on 1231595 V. Description of the invention (10) A spiral coil is formed on the surface of a conductive fg layer. The soft magnetic film can be sputtered and spin-coated ( spin coating) or printing. Series such as Mn-Zn ferrite, Ni-Mn-Zn ferrite or magnetite, etc., can be sputter-deposited ); And ferrite-resin paste (ferrite-res in paste) added can be deposited by printing. The ferrite magnet-resin paste may be a ferrite-zinc ferrite magnet (M n — z n f r r i t e). It can be formed by money key, spin coating or printing. Departments such as manganese-ferrite magnets (Mn-znferrite), nickel-manganese-zinc ferrite magnets (Ni-Mn-Zn ferrite) or ferric oxide (magnetite), etc. can be sputter-deposited ), And ferrite magnet-resin paste (ferrite_resin paste) can be deposited by printing. The ferrite magnet-resin paste may be a Mn-Zn ferrite powder dispersed in the resin. The above-mentioned spiral coil is formed on the surface of the support plate 11 by using an organic insulating layer as an adhesive layer. The technical means for directly making the passive element 3 on the surface of the support plate 丨 is known, and will not be repeated here. The above ceramic sintering type is related to the position of the electrode directly forming the passive element, which is related to the material of the support plate. When the material of the support plate 11 is ceramic, it can only be remotely located on the same side of the surface of the passive element 13 as in the first As shown in Figure C ', when the support plate 11 is a metal support plate, the electrodes 1 3 a on the passive element 13 may be formed on the same side of the surface of the passive element 13 (as shown in Figure 1C). ) Or different sides (as shown in Figure 1D).

17405 Quan 懋 .ptd Page 15 1231595 V. Description of the invention (11) As shown in 1 E to 1 G, the passive component 1 3 of the present invention is not limited to the surface provided on the support plate 1 1, and it may be According to actual requirements, the passive element 13 is connected to the surface recess Π 0 of the support plate 11. The semiconductor carrier board structure capable of receiving passive components of the present invention includes a metal or ceramic support plate 11 and a plurality of driven components 13 formed in the support plate. Wherein, a plurality of recesses 1 1 0 are formed on the upper surface 1 1 a of the support plate 11, and the passive element 13 may be a capacitor element, a resistance element or an inductance element, and may be formed in the recess 11 10. . The passive components 1 3 formed in the recess 1 10 can be formed by surface adhesion technology (as shown in Fig. 丨), sintering technology or direct formation (as shown in Fig. 1 F). When the passive component material is to be directly buried in the recess 丨 i 〇 on the surface of the support plate 11, the passive component material can be buried in the surface of the support plate 11 by using methods such as electroplating, chemical vapor deposition or coating. In the recessed part 1 10, a desired passive element is formed in the recessed part 1 10. Of course, the electrodes 1 3 a formed on the passive element 13 may also be formed on the same side or different sides of the passive element 13. The end depends on the type of the support plate 1 1. When 1 is a metal support plate, the electrodes on the passive element 13 3a can be formed on the same side (as shown in FIG. 1F) or different sides (as shown in FIG. 1G) of the passive element 13 surface. ); When the support plate 11 is a ceramic support plate, it can only be selected on the same side of the surface of the passive element i 3 (as shown in FIG. 1F), and is not limited to the one described in this embodiment. In this way, only a simple process is needed to integrate passive components such as resistors, capacitors or inductive components into the support for semiconductor packaging.

17405 Quan 懋 .ptd Page 16 1231595 V. Description of the invention (12) In the support plate 11 ', a passive element 13 which is an electrical conduction can be directly formed. Subsequently, it is possible to apply existing technologies such as layering or stacking to stack one or more layers of circuit structures, and the semiconductor carrier board structure 1 that can support passive components can be applied to ball grid array, flip chip and wire bonding In the semiconductor package structure, in addition, a heat sink (not shown) may be adhered to the surface of the support plate where passive components are not connected, so as to improve the heat dissipation efficiency of subsequent semiconductor structures. Please refer to Figs. 2A to 2F and Figs. 2A to 2F ', which are schematic cross-sectional views of the second embodiment of the semiconductor carrier board structure capable of supporting passive components according to the present invention. As shown in FIGS. 2A to 2C, the structure of the semiconductor carrier plate capable of supporting passive components in the second embodiment of the present invention is substantially the same as that disclosed in the first embodiment, and the difference is that the support plate 11 is connected on the surface. After the passive component 13 is provided, an insulating layer 20 is formed on the support plate 11 on which the passive component 13 is housed, and a patterning process can be used to form a patterned circuit structure 2 1 in the insulating layer. And enable the circuit structure 21 to be electrically connected to the electrode 13a of the passive element 13. Wherein, the material of the insulating layer 20 may be composed of organic materials, fiber-reinforced organic materials, or organic materials reinforced (P artic 1 e-reinforced), such as ethoxy resin (E ρ ox yresin) Po 1 yimide, cis-butyric acid diimide / Bismaleimide triazine-based resin, C yanateester and so on. The circuit structure 21 can be manufactured by forming a metal conductive layer, such as a copper layer, on the insulating layer 20, and reusing the contacts.

Π405 全懋 .ptd Page 17 1231595 V. Description of the invention (13) ~ --- The engraving technology is used to form a circuit patterned circuit layer. This circuit layer can also be formed in a patterned plating resist layer by electroplating. Circuit, in addition, the circuit ... structure is not limited to layers. The support plate 11 may be a metal or ceramic material, and the passive it member 13 may be formed on the surface by means of adhesion, sintering, or direct fabrication. 2. The structure of the semiconductor carrier plate capable of supporting passive components as shown in FIGS. 2A to 2C ′ is substantially the same as that disclosed in FIGS. 2A to 2C, and the difference is only formed in the insulating layer 20. At least one opening 22 allows the support plate 11 to close one side of the insulating layer opening 22, so that an electronic component such as a semiconductor wafer or the like is disposed in the insulating layer opening 22 afterwards. Among them, 4 support plates 11 may be metal or ceramic materials, and passive components 丨 3 may be formed in the recess u 〇 by means of adhesion, sintering, or direct fabrication. As shown in FIGS. 2D to 2F, the structure of the semiconductor carrier plate capable of receiving passive components is similar to that disclosed in the first embodiment, and the difference lies on the upper surface 1 1 of the support plate 1 1 a is formed with a plurality of recesses 1 1 0, so that the passive element 13 is selectively formed in the recesses Π 0, and then an insulating layer 20 is formed on the surface of the support plate 11 on which the passive elements are placed, and can be used A patterning process is performed to form a patterned circuit structure 21 in the insulating layer, and the circuit structure 21 can be electrically conducted to the electrode 1 3 a of the passive element 13. As shown in Figures 2D to 2F, the structure of the semiconductor carrier board that can accommodate passive components shown in the figure is roughly the same as that disclosed in Figures 2D to 2F. Fu Wu 円 #, 日 日 + 问 处 is only in the insulation At least one opening 22 is formed in the layer 20, and the support panel worker can close one side of the insulating layer opening 22, so as to provide subsequent electrons such as semiconductor wafers and the like in the edge opening 2 2 element. f 2 '% with the

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1231595 V. Description of the invention (14) The support plate 11 may be a metal or ceramic material, and the passive component 13 may be formed in the recessed portion 11 by being adhered, sintered, or directly made. In addition, a heat sink (not shown) can be adhered to the surface of the support plate where the insulating layer is not connected to improve the heat dissipation efficiency of subsequent semiconductor structures. Please refer to Figures 3A to 3F, which are A schematic cross-sectional view of a third embodiment of a semiconductor carrier board structure capable of supporting passive components according to the present invention. As shown in FIGS. 3A to 3C, the structure of the semiconductor carrier plate capable of receiving passive components in the third embodiment of the present invention is substantially the same as that disclosed in the first embodiment, and the difference lies in the support plate 1 1 At least one opening 1 1 1 is formed in the opening, so that electronic components can be accommodated later, and on the surface of the supporting plate 1 1, most passive components i 3 must be connected by means of adhesion, sintering or direct production, and when The support plate 11 is made of metal, and the electrodes 1 3a on the passive element 13 can be formed on the same side or different sides of the surface of the passive element 13 as shown in FIGS. 3D to 3F. The structure of the semiconductor carrier board with the passive components is similar to that disclosed in the first embodiment. The difference is that at least one opening 1 1 1 is formed in the support plate 1 1 so that electronic components can be accommodated in the subsequent steps. In addition, a plurality of recessed portions 1 1 0 are formed on the support plate 11 for receiving the passive elements 13. The support plate 11 may be made of metal or ceramic material, and the passive element 13 may be formed in the recess portion 10 by means of adhesion, sintering, or direct fabrication. Please refer to FIGS. 4A to 4F, which are schematic cross-sectional views of a fourth embodiment of a semiconductor carrier board structure capable of supporting passive components according to the present invention.

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Page 19, 1231595 V. Description of the invention (15) As shown in FIGS. 4A to 4C, the structure of the semiconductor carrier plate capable of supporting passive components in the fourth embodiment of the present invention is substantially the same as that disclosed in the third embodiment, At different places, at least one opening 11 is formed in the support plate 11 and a side of the support plate 11 is not provided with a passive element 13 and a heat sink 30 is connected with an adhesive layer 3 1. Allow the heat sink 30 to close one side of the opening 1 1 1 of the support plate, so that at least one electronic component such as a semiconductor wafer can be directly connected to the heat sink 30 and stored in the support plate ii. Inside the opening 111. The support plate 11 may be made of metal or ceramic material, and the passive component 13 may be formed on the surface by means of adhesion, sintering, or directly made. In addition, if the support plate 11 is metal, the support plate 11 may be connected to the heat sink. 30-body molding, and the structure of the heat sink 30 is not limited to those shown in this embodiment. Other heat sinks such as fins formed to increase the heat dissipation area can also be applied in the present invention. As shown in FIGS. 4D to 4F, the structure of the semiconductor carrier plate capable of receiving passive components is similar to that disclosed in the third embodiment, and the difference is that at least one opening 111 is formed in the support plate 11, A plurality of recessed portions 11 0 are formed on the support plate 11 to which passive components 13 can be connected, and a heat sink 3 0 is connected to one side of the support plate 11 without passive components 13. The heat sink 30 can close one side of the opening 1 1 1 of the support plate, so that at least one electronic component such as a semiconductor wafer can be directly connected to the heat sink 30 and stored in the support plate. 1 inside the opening. The support plate 11 may be a metal or ceramic material, and the passive element 13 may be formed in the recess 110 by means of adhesion, sintering, or direct fabrication. Because of the semiconductor carrier board structure capable of bearing passive components of the present invention 1

17405 全懋 .ptd Page 20 1231595 V. Description of the invention (16) Not only can the passive element 1 3 be integrated, but also the heat sink 30 can be connected to integrate the passive element 13, the heat sink 30, and the electronic component ( (Not shown), to provide the electronic component with appropriate shielding effect (Shielding), to protect the electronic component from external electromagnetic interference (Electromagnet interference: Ε Μ I) Under the trend, an effective number of passive components 13 and many electronic components such as semiconductor wafers are provided in a semiconductor package structure. The above 'are only specific embodiments of the present invention, but the present invention is not limited by this embodiment and should be self-evident, that is, the present invention is subject to other changes. Furthermore, the present invention can also arbitrarily integrate the aforementioned ^ ^ 1 ^ 2. For example, a passive element can be placed on the upper surface of the support plate or in a recess thereof, and can be used in pots, margins, and ## & It forms a patterned circuit structure, and the "metastatic line structure" can be electrically conductive. From the > + α, of course, it can also be a # + package "玍 Toad to the edge" The electrodes of the passive element ..., the lower surface of the supporting plate is connected with a scattered g, said that the two-sided insulating layer or the supporting plate of the supporting plate is provided with a political ... piece, and should be a storage space. "I selectively have at least one opening, so that the form of" Rhyme "Ming I ^ I% free from the semiconductor carrier board structure of multi-layer electrical failure f f2 pieces can avoid tedious, and the conventional ^ ^ placement The electrical characteristics such as the process value caused by the film-like passive component are paid at the time: '', * The manufacturing cost caused by the resistance value and capacitance according to different design requirements is large :: redesign, increase the cost of stacking the multilayer circuit board, etc. Questions: Material management problems, material packaging, and package substrates and printing. For the electrical functions required (for example, semi-conducting design, and-) electrical functions, complete the required circuit in advance. Structural combination and can carry

1231595 V. Description of the invention (17) Where the electronic components of the chip are reduced, the passive element of the present invention can be applied with a metal support plate. It can also be used to integrate and accommodate most passive components on the support plate with a simple process. In the middle, 俾 # forms the electrical design of the passive components that can be electrically connected. Therefore, the present invention can be used to solve various problems caused by the limitation of passive elements in the conventional technology, and the position and number of linear and linear settings. The structure of the same semiconductor carrier board is more suitable, and the circuit layout of the electronic device in the wire-type semiconductor package structure ° In addition, although the component is described as an example in the above embodiment, the idea must be plural Electronic components, the passive element needs to be changed, instead of using the passive components at the two ends of the implementation board as the limiting element and the capacitive element to indicate the 'actual number and relative position, which are limited by the actual specific embodiment . In order to explain the principle of the present invention and its effects, anyone skilled in the art can use the size of a semiconductor package substrate. Furthermore, the structure of the semiconductor carrier board can not only be a ceramic support board. In other words, it can be directly combined with the substrate and packaging process, such as electric capacitors, capacitors or inductive components, to complete the layout and number of semiconductor carrier board structural components provided by it to carry semiconductor dynamic components, or other needs. When a bomb is provided, the passive element of the present invention can be used in a ball grid array type, a flip-chip type, and does not affect the semiconductor package. The supporting plate carries an electron. However, the supporting plate can also be used to support the component. The setting position and quantity must also be set on the branch as shown in the example. In the previous drawings, only a part of the process for electrically manufacturing the resistive element and the capacitive element is designed instead of the words. The above embodiments are merely examples, not intended to limit the present invention. Any violation of the spirit and scope of the present invention

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17405 Quan 懋 .ptd Page 23 1231595 Brief description of the drawings [Simplified description of the drawings] Figures 1 A to 1 G are the intentions of the structure of the semiconductor carrier board capable of receiving passive components according to the first embodiment of the present invention. 2A to 2F and 2A 'to 2F' are schematic diagrams of a structure of a semiconductor carrier board capable of supporting passive components according to the second embodiment of the present invention; and FIGS. 3A to 3F are capable of supporting the third embodiment of the present invention. Schematic diagrams of the structure of a semiconductor carrier board for passive components; and FIGS. 4A to 4F are schematic diagrams of the structure of a semiconductor carrier board that can support passive components according to a fourth embodiment of the present invention. 1Semiconductor load-bearing plate structure

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Claims (1)

1231595 Scope of patent application 1 · One can bear 60% of the price 2 · If the medium plate is connected to supply capacity 3. Rushen bearing power element 4. Rushen bearing sintering. 5. If you apply for a gold and multiple electrodes, please make a special structure, and if you are asked to make a special piece of metal, please ask for a special structure, and ask for a special structure, either one of them. If you apply for a special board structure, a semiconductor carrier board structure with passive components includes: a support plate; and a passive component that is placed on the support plate and shaped for conduction. The semiconductor bearing capable of receiving passive components according to the first item of the invention, wherein at least one recessed part of the support plate may be formed on the surface of the support plate to move the component. The semiconductor structure capable of supporting passive components according to item 1 or 2, wherein the electrodes of the passive components can be formed on one of the same side surface and different side surfaces. The passive semiconductor device structure capable of supporting passive components according to item 1 or 2 of the scope of interest, wherein the passive component can be a passive component that can be placed on the support plate according to item 4 of the scope of interest by using surface adhesion and direct formation of passive component materials. The semiconductor is carried therein, and the passive device material can be formed on the support plate by a deposition and coating method and a patterning process. The structure of the semiconductor carrier plate with passive components includes a support plate; a passive component is provided on the support plate and is formed for conduction; and a heat sink is connected to the support plate. The semiconductor carrier capable of receiving passive components according to Item 6 wherein the surface of the support plate may be formed with at least one recess to 17405 懋 .ptd Page 25 1231595 6. Scope of patent application Provides the capacity to accommodate passive components. 8. For the semiconductor carrier board structure that can support passive components according to item 6 or 7 of the scope of patent application, the electrodes of the passive component may be formed on one of the same side surface and different side surfaces of the passive component. 9. For a semiconductor carrier board structure capable of supporting passive components, such as the scope of patent application No. 6 or 7, wherein the passive component can be installed on the support plate by surface adhesion, sintering, and directly forming the passive component material. 10. The semiconductor carrier board structure capable of supporting passive components according to item 9 of the scope of patent application, wherein the passive component material can be formed on the support by any method of deposition and coating and through a patterning process. On the board. 1 1. A semiconductor carrier board structure capable of supporting passive components, comprising: a metal support plate, the metal support plate having at least one opening; and a plurality of passive components, which are disposed on the support plate and formed with Electrodes for conduction. 12. The semiconductor support board structure capable of receiving passive components according to item 11 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the support board for receiving the passive components. 1 3. If the semiconductor carrier board structure capable of supporting passive components according to item 11 or 12 of the scope of patent application, the electrodes of the passive components may be formed on the same side surface and different side surfaces of the passive component. One. 1 4. The semiconductor carrier board structure capable of receiving passive components according to item 11 or 12 of the scope of patent application, wherein the passive component can be surface-adhered. 17405 Quan 懋 .ptd Page 26 1231595 6. Scope of patent application, sintering, and direct formation of passive component materials are set on the support plate. 15. The semiconductor carrier board structure capable of supporting passive components according to item 14 of the scope of the patent application, wherein the passive component material can be formed on the support plate by any method of deposition and coating and through a patterning process. on. 1 6 · A semiconductor carrier board structure capable of receiving passive components, comprising: a metal support board, and the metal support board has at least one opening to be closed 1 7 · such as a carrier board for 18. Passive body support 19 · If you apply body support, burn the board 20 · If you apply a plurality of passive electrodes on the board to guide a heat sink, please hold the support board for a patented structure, which contains a passive element for a patented carrier board The structure and the components are the same. Patented carrier board structure, structure, and direct patented structure, in which the components are arranged on the support board and are shaped; and are connected to the support board so that the One side of the heat sink opening. Passive of item 16 ′ The surface of the support plate can be shaped. Item 16 or 17 can be placed therein, the side surface of the passive element and different side surfaces Item 16 or 17 can be placed therein, the passive element forms the passive element material of item 19 Passive can be accommodated. The semiconductor of the passive element material is a semiconductor element with at least one recessed passive element, and one of the semiconductive electrodes can be formed thereon. The semi-conductor of the passive component can be surface-adhesive. The semiconductor support provided on the support component can be deposited and coated. Page 27 17405 All thoughts. Ptd 1231595 VI. Patent application scope Any one of the cloth 21 · — A pattern that can bear a number of patterns to be formed on the support plate. The structure of the semi-conductor carrier board includes: · with electrode surface characteristics 2 2 · If the carrier is 2 3 · Such as the body quilt 2 4. If the body has an insulating surface, it leads to the application-specific board structure for the accommodation application The plate moving element applies for the sintering and loading of the special bearing plate. Apply for a special method and set a passive element as a passive plate on the support plate for conducting the edge layer, and the insulation is the passive element in the range of passive elements. The scope of the 21st or 22nd structure of the benefit range, wherein, in the same side surface of the quilt and in the 21st or 22nd, the quilt is a passive element and is set; and the 21th electrode of the electrode formed in the layer may be formed. The structure of the supporting plate is in the range of the structure, and the supporting plate is directly placed on the supporting plate, and the supporting plate in the shape of a passive component has a patterned circuit structure to supply power. The semiconductor bearing surface on which the passive component is placed may have at least one The electrode of the recessed part which can receive the passive element can be formed on one of the same side surfaces. The semi-driving element that can accept passive components can be set on the support plate 2 5 using surface adhesive materials. · As any 2 6 of the carrier structure cloth. A semiconductor support capable of supporting passive components, wherein the passive component material can be formed on the support plate by a deposition and coating method and a patterning process. The structure of a semiconductor carrier plate with passive components includes: a support plate; and a passive component, which is arranged on the support plate and has a shape 17405 Quan 懋 .ptd Page 28 1231595 _______ VI. The scope of patent application is to have electrodes for conduction; an insulation layer is formed on the surface of the support plate on which passive components are placed, and a pattern is formed in the insulation layer. The circuit structure is electrically connected to the electrode of the passive component with power supply; and a heat sink is connected to one side of the support plate where the insulating layer is not formed. 27. The semiconductor carrier board structure capable of receiving passive components according to item 26 of the patent application scope, wherein at least one recessed portion may be formed on the surface of the supporting board for receiving the passive components. 2 8 · If the semiconductor device board structure capable of supporting passive components according to item 26 or 27 of the patent application scope, wherein the electrodes of the passive component may be formed on the same side surface and different side surfaces of the passive component One. 2 9 _ If a semiconductor carrier board structure capable of supporting passive components can be placed on the support of item No. 26 or 27 of the patent application scope, wherein the passive component can be installed on the support by surface adhesion, sintering, and directly forming the passive component material. On the board. 3 0 If the semiconductor device board structure capable of supporting passive components according to item 29 of the patent application, 'wherein, the passive component material can be formed in the method by any method of deposition and coating and patterning process. Support plate. 3 1 · A semiconductor carrier board structure capable of bearing passive components, comprising: a metal support plate; a plurality of passive components are provided on the support plate and formed with electrodes for conduction; and a patterned structure The insulation layer of the circuit structure is formed on the bearing 17405 全懋 .ptd Page 29 1231595 VI. The scope of the patent application is placed on the surface of the support board with passive components, the patterned circuit structure can be selectively electrically connected to the electrodes of the passive components, and the insulation layer has at least one penetration An opening, and the support plate closes one side of the opening of the insulating layer. 32. The semiconductor carrier board structure capable of receiving passive components according to item 31 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the supporting board for receiving the passive components. 3 3. If the structure of the semiconductor carrier plate capable of supporting passive components according to item 31 or 32 of the scope of patent application, the electrodes of the passive components may be formed on the same side surface and different side surfaces of the passive component. One. 3 4. If the semiconductor carrier board structure capable of supporting passive components according to item 31 or 32 of the scope of patent application, the passive components can be installed on the support by surface adhesion, sintering, and directly forming passive component materials. On the board. 35. The semiconductor carrier board structure capable of supporting passive components according to item 34 of the scope of patent application, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. 3 6. —A semiconductor carrier board structure capable of bearing passive components, comprising: a metal support plate; a plurality of passive components are arranged on the support plate and formed with electrodes for conduction; a patterned circuit The insulating layer of the structure is formed on the surface of the support plate on which the passive element is housed. The patterned circuit structure can be selectively electrically connected to the electrode of the passive element, and the insulating layer has Π405 全懋 .ptd Page 30 1231595 6. The scope of the patent application has at least one through opening so that the support plate closes one side of the opening of the insulation layer; and a heat sink is connected to the support plate and is not formed. There is an insulation layer on one side. 37. The semiconductor carrier board structure capable of receiving passive components according to item 36 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the supporting board for receiving the passive components. 3 8 · If the semiconductor device board structure capable of supporting passive components according to item 36 or 37 of the patent application scope, wherein the electrodes of the passive components may be formed on the same side surface and different side surfaces of the passive component One. 39. The semiconductor carrier board structure capable of supporting passive components according to item 36 or 37 of the scope of patent application, wherein the passive component can be installed on the support by surface adhesion, sintering, and directly forming the passive component material. On the board. 4 (K such as the semiconductor carrier board structure that can support passive components in item 39 of the scope of patent application, in which passive component materials can be formed in the method by any method of deposition and coating and through a patterning process. Support board. 4 1. A semiconductor carrier board structure capable of supporting passive components, comprising: a ceramic support board; and a plurality of passive components, which are arranged on the support board and formed with electrodes for conduction. 4 2. The semiconductor carrier board structure capable of receiving passive components according to item 41 of the scope of patent application, wherein at least one concave portion may be formed on the surface of the support plate for receiving the passive components. 17405 Quan 懋 .ptd Page 31 1231595 VI. Patent application scope 4 3. If the patent application scope item 4 1 or 42 is a semiconductor carrier board structure capable of bearing passive components, wherein the electrodes of the passive components are formed in the The same side surface of the passive element. 44. For example, a semiconductor bearing plate structure capable of receiving passive components in the scope of patent application No. 41 or 42, wherein the passive component can be installed on the support plate by surface adhesion, sintering, and directly forming the passive component material. 45. For example, a semiconductor carrier board structure capable of supporting passive components according to item 44 of the scope of patent application, wherein the passive component material can be formed on the support plate by any method of deposition and coating and through a patterning process. on. 4 6. A semiconductor carrier board structure capable of bearing passive components, comprising: a ceramic support plate; a plurality of passive components provided on the support plate and formed with electrodes for conduction; and a heat sink, Tethered on the support plate. 4 7. The semiconductor carrier board structure capable of receiving passive components according to item 46 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the carrier plate for receiving the passive components. 48. The semiconductor load bearing plate structure capable of receiving passive components according to item 46 or 47 of the scope of patent application, wherein the electrodes of the passive component are formed on the same side surface of the passive component. 49. If the semiconductor device supporting plate structure capable of receiving passive components according to item 46 or 47 of the scope of patent application, the passive component can be installed on the support by surface adhesion, sintering, and directly forming the passive component material. 17405 Quan 懋 .ptd Page 32 1231595 6. Scope of Patent Application Board. 50. The semiconductor carrier board structure capable of supporting passive components according to item 49 of the scope of patent application, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. 5 1. A semiconductor carrier board structure capable of receiving passive components, comprising: a ceramic support plate having at least one opening; and a plurality of passive components 'set on the support plate' and formed There are electrodes for conducting. 52. The semiconductor carrier board structure capable of receiving passive components according to item 51 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the supporting board for receiving the passive components. 53. The semiconductor carrier plate structure capable of receiving passive components according to item 51 or 52 of the patent application scope, wherein the electrodes of the passive component are formed on the same side surface of the passive component. 54. If the semiconductor device board structure capable of supporting passive components according to item 51 or 52 of the scope of patent application, the passive components can be installed on the support by surface adhesion, sintering, and directly forming passive component materials. On the board. 55. The semiconductor carrier board structure capable of supporting passive components according to item 54 of the scope of patent application, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. 5 6. A semiconductor carrier board structure capable of supporting passive components, comprising: a ceramic support board, and the ceramic support board has at least one opening 17405 全懋 .ptd Page 33 1231595 VI. Scope of patent application j A plurality of passive components are provided on the support plate and formed with electrodes for conduction; and a heat sink is connected to the support plate, The heat sink closes one side of the opening of the support plate. 57. The semiconductor carrier board structure capable of receiving passive components according to item 56 of the patent application scope, wherein at least one recess may be formed on the surface of the supporting board for receiving the passive components. 5 8 · Semiconductor load-bearing plate structure capable of receiving passive components as described in the scope of patent application No. 56 or 57, wherein the electrodes of the passive component are formed on the same side surface of the passive component. 5 9 · If the semiconductor carrier board structure that can support passive components according to item 56 or 57 of the scope of patent application, the passive component can be installed on the support by surface adhesion, sintering, and directly forming the passive component material. On the board. 6 0 · The semiconductor carrier board structure capable of supporting passive components according to item 5 of the patent application scope, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. 6 1-A semiconductor carrier board structure capable of bearing passive components, including a ceramic support plate, a plurality of passive components, provided on the support plate, and formed with electrodes for conduction; and an insulation Layer is formed on the surface of the support board on which passive components are housed, and a patterned circuit structure is formed in the insulating layer to supply power 17405 懋 .ptd Page 34 1231595 6. Scope of patent application Conductive connection to the electrode of the passive element. 6 2 · The semiconductor carrier board structure capable of receiving passive components according to item 61 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the supporting board for receiving the passive components. 63. The semiconductor carrier board structure capable of receiving passive components according to item 61 or 62 of the patent application scope, wherein the electrodes of the passive component are formed on the same side surface of the passive component. 6 4 · If the patent application scope No. 61 or 62 of the semiconductor carrier board structure that can support passive components, wherein the passive components are selected on the support by surface adhesion, sintering, and direct formation of passive component materials On the board. 65. The semiconductor carrier board structure capable of supporting passive components according to item 64 of the scope of patent application, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. 6 6 · A semiconductor carrier board structure capable of bearing passive components, including: a ceramic support plate; a plurality of passive components are provided on the support plate and formed with electrodes for conduction; an insulating layer, Formed on the surface of the support board on which the passive element is housed, and a patterned circuit structure is formed in the insulating layer to electrically conduct the electrodes of the passive element; and a heat sink is connected to the support board and One side of the insulating layer is formed. 6 7 · If the application scope of the patent application No. 6 6 of the town of passive semiconductor components 17405 懋 .ptd Page 35 1231595 6. Scope of Patent Application The carrier board structure, wherein the surface of the supporting board may be formed with at least one recess for receiving passive components. 68. The semiconductor carrier plate structure capable of receiving passive components according to item 6 or 67 of the scope of patent application, wherein the electrodes of the passive component are formed on the same side surface of the passive component. 6 9. If the semiconductor device board structure capable of supporting passive components according to item 6 or 67 of the scope of patent application, the passive components can be installed on the support by surface adhesion, sintering, and directly forming passive component materials. On the board. 70. The semiconductor carrier board structure capable of supporting passive components according to item 69 of the patent application scope, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. 7 1. —Semiconductor carrier board structure capable of bearing passive components, comprising: a ceramic support plate; a plurality of passive components are provided on the support plate, and electrodes are formed for conduction, and a patterning device is provided. The insulating layer of the circuit structure is formed on the surface of the support board on which the passive element is housed. The patterned circuit structure can be selectively electrically connected to the electrode of the passive element, and the insulating layer has at least one through opening, and The support plate closes one side of the opening of the insulation layer. 72. The semiconductor carrier board structure capable of receiving passive components according to item 71 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the supporting board for receiving the passive components. 17405 Quan 懋 .ptd Page 36 1231595 6. Application for patent scope 7 3. For the semiconductor carrier board structure capable of bearing passive components such as the scope of patent application No. 7 1 or 72, wherein the electrodes of the passive component are formed in the The same side surface of the passive element. 74. The semiconductor bearing plate structure capable of receiving passive components according to the scope of patent application No. 71 or 72, wherein the passive component can be arranged on the support plate by surface adhesion, sintering, and directly forming the passive component material. 75. The semiconductor carrier board structure capable of supporting passive components according to item 74 of the scope of patent application, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. 7 6. —Semiconductor carrier board structure capable of bearing passive components, comprising: a ceramic support plate; a plurality of passive components are arranged on the support plate and formed with electrodes for conduction; a patterned circuit The insulating layer of the structure is formed on the surface of the support plate on which the passive element is housed. The patterned circuit structure can be selectively electrically connected to the electrode of the passive element, and the insulating layer has at least one through opening so that The supporting plate closes one side of the opening of the insulating layer; and a heat sink is connected to one side of the supporting plate where the insulating layer is not formed. 77. The semiconductor carrier board structure capable of receiving passive components according to item 76 of the scope of patent application, wherein at least one recessed portion may be formed on the surface of the supporting board for receiving the passive components. 17405 Quan 懋 .ptd Page 37 1231595 VI. Application for patent scope 7 8. If the patent application scope No. 76 or 7 7 is a semiconductor carrier board structure capable of receiving passive components, wherein the electrodes of the passive components are formed in the The same side surface of the passive element. 7 9. If the semiconductor carrier board structure capable of supporting passive components according to item 7 or 7 of the scope of patent application, the passive components can be installed on the support by surface adhesion, sintering, and directly forming the passive component material. On the board. 80. The semiconductor carrier board structure capable of supporting passive components according to item 7 of the scope of patent application, wherein the passive component material can be formed on the passive component material by any method of deposition and coating and through a patterning process. Support plate. II __ 17405 懋 .ptd p.38