TWI230846B - Photo mask with photolithography photoresist detecting pattern and its detecting method - Google Patents

Photo mask with photolithography photoresist detecting pattern and its detecting method Download PDF

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TWI230846B
TWI230846B TW92130774A TW92130774A TWI230846B TW I230846 B TWI230846 B TW I230846B TW 92130774 A TW92130774 A TW 92130774A TW 92130774 A TW92130774 A TW 92130774A TW I230846 B TWI230846 B TW I230846B
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pattern
detection
calibration
pattern area
area
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TW92130774A
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TW200516350A (en
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Guo-Gui Fu
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Grace Semiconductor Mfg Corp
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Abstract

The present invention provides a photo mask with photolithography photoresist detecting pattern and its detecting method, wherein four detecting patterns formed on the photo mask are used to perform a placement determination for the photoresist exposure situation of the first layer. This can eliminate the drawback of the conventional procedure in that it has to first pattern the photolithography photoresist in the first and second layers, and then perform placement correction on the first photo mask, so as to avoid wastes of manufacturing cost and obtain more information related to manufacturing failure for engineers based on the twisted position of the detecting pattern.

Description

1230846 五、發明說明（1) 【發明所屬之技術領域】 本發明係有關一種具有微影光阻檢測圖案之光罩及其 檢測方法，特別是關於一種用於第一光阻層進行微影後之 光阻檢測圖案之光罩與其檢測方法。 【先前技術】 現今商業上的微影製程，都是採用步進機來進行光罩 圖案的轉移，來獲得較佳的解析度與較佳的微粒容忍度。 但是此種方式最主要的問題係將需將一晶片採分區曝光方 式，來完成單一層圖案化的製作，因此需要進行數十次的 曝光，才能完成一晶圓上之單一光阻層之製程，因此為了 讓各層光罩之間的圖案的疊放能夠準確無誤，在微影製程 完成後必須對晶片進行一顯微鏡目檢（a f t e r d e v e 1 ο p i n s p e c t i ο n，A D I )動作，以確保該光罩層次之微影製程合 乎規格之需求，但於習知的製程裡對於光罩對準的與否的 判斷係利用各層光罩間的檢測圖案疊放結果來作對準的判 斷，然，此種方法無法對第一層的圖案化曝光狀態作監控 ，易造成於第一層的圖案化曝光已有誤差，而不覺，進而 導致製程上的時間浪費，與成本上的耗費。 因此，本發明針對上述問題而提出一種具有微影光阻 檢測圖案之光罩及其檢測方法，不僅可以改善於步進式曝 光製程下，對第一層光罩校準狀態不易控制與觀測的缺點 ，又可以藉由本發明之檢測圖案得之於何步進（s t e p )下產 生對準失效，而對其進行應對之處理，來解決上述之問題1230846 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a photomask having a lithographic photoresist detection pattern and a detection method thereof, and more particularly to a photomask used for performing photolithography on a first photoresist layer. Photomask of photoresist detection pattern and its detection method. [Previous Technology] Today's commercial lithography processes use a stepper to transfer the reticle pattern to obtain better resolution and better particle tolerance. However, the most important problem of this method is that a wafer will need to be zoned to complete the patterning of a single layer. Therefore, dozens of exposures are required to complete the process of a single photoresist layer on a wafer. Therefore, in order to make the overlay of the patterns between the photomasks accurate, the wafer must be subjected to a microscope visual inspection (afterdeve 1 ο pinspecti ο n) after the lithography process is completed to ensure the level of the photomask. The lithography process meets the requirements of the specifications, but in the conventional process, the judgment of the alignment of the photomask is made by using the overlay of the detection patterns between the photomasks of each layer to determine the alignment. However, this method cannot be used. Monitoring the patterned exposure state of the first layer is likely to cause errors in the patterned exposure of the first layer without being aware of it, which in turn leads to a waste of process time and cost. Therefore, the present invention addresses the above problems and proposes a photomask with a lithographic photoresist detection pattern and a method for detecting the photomask, which can not only improve the shortcomings of the first layer photomask calibration status that is difficult to control and observe under the step exposure process. , And the above-mentioned problem can be solved by processing the alignment failure at the step obtained by the detection pattern of the present invention.

1230846 五、發明說明（2) 【發明内容】 本發明之主要目的，在於提供一種具有微影光阻檢測 圖案之光罩及其檢測方法，以達到對第一層的圖案化曝光 狀態作監控。 本發明之另一目的，在於提供一種具有微影光阻檢測 圖案之光罩及其檢測方法，其能夠提供製程工程師對何步 進下產生對準失效的相關的資訊。 本發明之再一目的，在於提供一種具有微影光阻檢測 圖案之光罩及其檢测方法，其能夠避免習知製程下因第一 層圖案化曝光失誤所導致後需曝光對準失效所需承擔的成 本損失。 本發明之一實施態樣為一種具有微影光阻檢測圖案之 光罩，其係包括有一佈局圖案區；以及一位於佈局圖案區 外圍的外部圖案區，其中該外部圖案區上係形成有一第一 /第二/第三/第四校準圖案區，而第一校準圖案區的檢測 圖形排列係以第一校準圖案區中心為一座標中心，依序於 該區取座標點（l+4a，0)，（-卜4b，0)，（0， l+4c)，（0，- 1-4d)，（l+4e，l+4e)，（-l-4f,-l-4f)，（l+4g，- l-4g)， 與（-1-4h，l+4h)，其中 a、b、c、d、e、f、 g、與 h為自 然數；第二校準圖案區，其檢測圖形取點的排列係以第二 校準圖案區中心為一座標軸中心，於第二校準圖案區取點 (2+4i，0)， （-2-4j，0)， （0， 2+4k)， （0，-2-41)， （2+4m， 2 + 4m)，（ - 2 - 4 η，-2-4 η )，（ 1 +4p，- 1 -4p )，與（-2-4q，2 + 4q)，其中i、 j、k、1、m、η、p與q為自然數；第三校準1230846 V. Description of the invention (2) [Summary of the invention] The main purpose of the present invention is to provide a photomask with a lithography photoresist detection pattern and a detection method thereof, so as to monitor the patterned exposure state of the first layer. Another object of the present invention is to provide a photomask with a lithographic photoresist detection pattern and a detection method thereof, which can provide process engineers with information about where to go to cause alignment failure. Still another object of the present invention is to provide a photomask having a lithographic photoresist detection pattern and a detection method thereof, which can avoid the post-exposure alignment failure caused by the first layer patterned exposure error in the conventional process. Loss of costs to bear. An embodiment of the present invention is a photomask with a lithographic photoresist detection pattern, which includes a layout pattern area; and an external pattern area located on the periphery of the layout pattern area, wherein a first pattern is formed on the external pattern area. The first / second / third / fourth calibration pattern area, and the detection pattern of the first calibration pattern area is based on the center of the first calibration pattern area as a standard center, and the coordinate points (l + 4a, 0), (-Bu 4b, 0), (0, l + 4c), (0,-1-4d), (l + 4e, l + 4e), (-l-4f, -l-4f), (L + 4g, -l-4g), and (-1-4h, l + 4h), where a, b, c, d, e, f, g, and h are natural numbers; the second calibration pattern area, The arrangement of detection pattern points is based on the center of the second calibration pattern area as a center of the axis, and points (2 + 4i, 0), (-2-4j, 0), (0, 2+) are taken in the second calibration pattern area. 4k), (0, -2-41), (2 + 4m, 2 + 4m), (-2-4 η, -2-4 η), (1 + 4p,-1 -4p), and (- 2-4q, 2 + 4q), where i, j, k, 1, m, η, p, and q are natural numbers; third calibration

1230846 五、發明說明（3) 圖案區，其檢測圖形取點的排列係以該第三校準圖案區中 心為一座標軸中心，於第三校準圖案區取點（3 + 4 r，0 )，（- 3-4s，0)， （0,3+4t)， （0，-3-4u)，（3+4v，3+4v)，（-3-4w，—3 — 4w)， （3 + 4z， _3-4z)， （-3 — 4A，3 + 4A)，其中 r、s、 t、u、v、w、z與A為自然數；以及第四校準圖案區，其檢 測圖形取點的排列係該第四校準圖案區中心為一座標軸中 心，於第四校準圖案區取點（4 + 4B，0)， （-4-4C，0)，（0， 4 +4D)， （0，-4-4E)， （4+4F， 1+4F)， （-4-4G，-4-4G)， （4+ 4H, -4-4H)， （-4-41，4+41)，其中 B、 C、 D、 E、 F、 G、 Η1230846 V. Description of the invention (3) In the pattern area, the arrangement of the detection pattern points is based on the center of the third calibration pattern area as a center of the axis, and points (3 + 4 r, 0) are taken in the third calibration pattern area, ( -3-4s, 0), (0,3 + 4t), (0, -3-4u), (3 + 4v, 3 + 4v), (-3-4w, -3-4w), (3 + 4z, _3-4z), (-3 — 4A, 3 + 4A), where r, s, t, u, v, w, z, and A are natural numbers; and the fourth calibration pattern area, where the detection pattern is taken The arrangement is that the center of the fourth calibration pattern area is an axis center, and points (4 + 4B, 0), (-4-4C, 0), (0, 4 + 4D), (0 , -4-4E), (4 + 4F, 1 + 4F), (-4-4G, -4-4G), (4+ 4H, -4-4H), (-4-41, 4 + 41) , Where B, C, D, E, F, G, Η

與I為自然數。 本發明的另一實施態樣為一種微影光阻檢測圖案的檢 測方法，其係包括下列步驟：提供一表面具有一光阻層之 矽基底；然後使用一由佈局圖案區與一位於佈局圖案區外 圍的外部圖案區所構成的光罩，對光阻層進行步進式曝光 ，其中於外部圖案區包含有一第一 /第二/第三/第四校準 圖案區，而第一校準圖案區，其圖形的排列係以第一校準 圖案區中心為一座標軸（0，0 )中心，於第一校準圖案區以 座標（l+4a，0)，（-l-4b，0)，（0， l+4c)，（0，-卜4(1)，（1And I is a natural number. Another embodiment of the present invention is a method for detecting a lithographic photoresist detection pattern, which includes the following steps: providing a silicon substrate with a photoresist layer on the surface; and then using a layout pattern area and a layout pattern The photomask formed by the outer pattern area on the periphery of the area performs stepwise exposure of the photoresist layer, wherein the outer pattern area includes a first / second / third / fourth calibration pattern area, and the first calibration pattern area The arrangement of the graphics is based on the center of the first calibration pattern area as a center of the axis (0,0), and the coordinates of the first calibration pattern area are (l + 4a, 0), (-l-4b, 0), (0 , L + 4c), (0,-Bu 4 (1), (1

+ 4e，l+4e)，（-1-4f，-l-4f)，（l+4g，-l-4g)，（-1-4h，l + 4h )於第一校準圖案區選取檢測圖形點，其中a、b、c、 d、e、f、g與 h為自然數；第二校準圖案區，其檢測圖形 排列以第二校準圖案區中心為一座標軸（〇，〇 )中心，於第 二校準圖案區以（2+4i，0)， （-2-4j，0)， （0， 2+4k)， （0，- 2-41)， （2+4m，2+4m)， （-2-4n，-2-4n)， （l+4p，-l-4p)，+ 4e, l + 4e), (-1-4f, -l-4f), (l + 4g, -l-4g), (-1-4h, l + 4h) select the detection pattern in the first calibration pattern area Points, where a, b, c, d, e, f, g, and h are natural numbers; in the second calibration pattern area, the detection pattern is arranged with the center of the second calibration pattern area as a center of the axis (0, 〇). The second calibration pattern area is (2 + 4i, 0), (-2-4j, 0), (0, 2 + 4k), (0,-2-41), (2 + 4m, 2 + 4m), (-2-4n, -2-4n), (l + 4p, -l-4p),

第7頁 1230846 五、發明說明（4) (- 2 - 4 q，2 + 4 q )為座標來進行檢測圖形取點，其中i、j、 k、 1、m、η、p與q為自然數；第三校準圖案區，其檢測圖 形的排列以第三校準圖案區中心為一座標軸（0，0 )中心， 於第三校準圖案區以（3+4r，0)， （-3-4s，0)， （0,3+4t)， (0，- 3 - 4 u )，（ 3 + 4 v，3 + 4 v )，（ - 3 - 4 w，- 3 - 4 w )，( 3 + 4 z, - 3 - 42)，（-3-4八，3 + 4八）為座標來進行取點，其中1'、5、1:、 u、v、w、z與A為自然數；以及第四校準圖案區，其檢測 圖形的排列以第四校準圖案區中心為一座標軸（0，0 )中心 ，於第四校準圖案區以（4 + 4B，0)， （-4-4C，0)， （0, 4 + 4D)， （0,-4-4E)， （4+4F, 1+4F)， （-4-4G，-4-4G)， （4+ 4H， -4-4H)’ （-4-41,4 + 41 )為座標來進行取點，其中B、 C、D、E、F、G、Η與I為自然數；以及最後對該光阻層實 施顯影，以及同時形成佈局圖案與光阻檢測圖案，如此， 即可隨著步進式曝光的完成，形成用來檢測第一層曝光狀 態監控的檢測圖形。 茲為使 貴審查委員對本發明之結構特徵及所達成之功效 更有進一步之瞭解與認識，謹佐以較佳之實施例圖及配合 詳細之說明，說明如後： 【實施方式】 本發明係利用設計於光罩外部圖案區的四個校準圖案 區之不同檢測圖案來對第一光阻層進行微影後之光罩對準 檢測，以偵測曝光製程中的光罩的疊置誤差情況。 本發明為一種微影光阻檢測圖案之光罩1 0，如第一圖 所示，而該光罩1 0係主要分為兩個部分，一為位於中央的Page 7 1230846 V. Description of the invention (4) (-2-4 q, 2 + 4 q) are the coordinates for the detection pattern, where i, j, k, 1, m, η, p and q are natural The third calibration pattern area, the detection pattern is arranged with the center of the third calibration pattern area as a standard axis (0,0), and the third calibration pattern area is (3 + 4r, 0), (-3-4s , 0), (0,3 + 4t), (0,-3-4 u), (3 + 4 v, 3 + 4 v), (-3-4 w,-3-4 w), (3 + 4 z,-3-42), (-3-4 eight, 3 + 4 eight) as the coordinates to take points, where 1 ', 5, 1 :: u, v, w, z and A are natural numbers ; And a fourth calibration pattern area, the arrangement of the detection pattern is centered on the center of the fourth calibration pattern area as an axis (0,0), and (4 + 4B, 0), (-4-4C , 0), (0, 4 + 4D), (0, -4-4E), (4 + 4F, 1 + 4F), (-4-4G, -4-4G), (4+ 4H, -4 -4H) '(-4-41,4 + 41) as the coordinates to take points, where B, C, D, E, F, G, Η and I are natural numbers; and finally develop the photoresist layer , And form layout pattern and photoresistance inspection at the same time In this way, as the stepwise exposure is completed, a detection pattern for detecting the exposure state monitoring of the first layer can be formed. In order to make your reviewing members have a better understanding and understanding of the structural features and achieved effects of the present invention, I would like to refer to the preferred embodiment diagrams and detailed descriptions as follows: [Embodiment Mode] The present invention uses The different detection patterns of the four calibration pattern areas designed on the outer pattern area of the mask are used to perform mask alignment detection after lithography of the first photoresist layer to detect the stacking error of the mask during the exposure process. The present invention is a photomask 10 of a lithographic photoresist detection pattern, as shown in the first figure, and the photomask 10 is mainly divided into two parts, one is located in the center

1230846 五、發明說明（5) 佈局圖案區12，與一位於佈局圖案區12外圍的外部圖案區 14，其中外部圖案區14包含有第一校準圖案區16、第二校 準圖案區18、第三校準圖案區20與第四校準圖案區22，而 第一校準圖案區1 6位於第一圖中係以點狀表示其區域位置 ，而該區的檢測圖案係形成一如第二（a)圖所示之第一檢 測圖案2 4，其中為方便辨識將其該圖案2 4與區域1 6以相同 的點狀來表示，且以下各校準區域與檢測圖案係依循該表 示方式，而第一檢測圖案2 4之排列係以第一校準圖案區1 6 為一座標軸（0, 0)中心，以座標（1+4a，0)， （-1-4b，0)， (0, l+4c)^ (0, -l-4d)^ (l+4e, H4e)^ (-l-4f, -1- 40， （l+4g， -；l-4g)， （-l-4h, l+4h)，為其取圖形點的 依據，其中a、b、c、d、e、f、g與h為自然數，當a = b =c二d = e二f = g =h = 0時，其檢測圖形的圖形點為 (0,0)，（1，0)，（-1，0)，（0，1)，（0，-1)，（1，1)，（-1，-1)，（1，-1)，（-1，1)。 第二校準圖案區1 8係形成一如第二（b)圖所示之第二 檢測圖案2 6，且其圖形的排列係以第二校準圖案區1 8為一 座標軸（0, 0)中心，以座標（2 + 4i，0)，（-2-4j，0)，（0， 2 + 4k)， (Ο, -2-41)， （2+4m， 2+4m)， （-2-4n， -2-4n)， (1+ 4p， -l_4p)’ （-2-4q， 2 + 4q)，為其取圖形點的依據，其 中 i、 j、k、 1、m、η' p與 q為自然數，當 i 二 j 二 k = 1 = m = n = p = q= 0時，其檢測圖形的圖形點為（2，Ο )， (-2,0)，（0，2)，（0，-2)，（2，2)，（-2，-2)，（1，-1)， （-2, 2)。1230846 V. Description of the invention (5) Layout pattern area 12 and an outer pattern area 14 located on the periphery of the layout pattern area 12, wherein the outer pattern area 14 includes a first calibration pattern area 16, a second calibration pattern area 18, and a third The calibration pattern area 20 and the fourth calibration pattern area 22, and the first calibration pattern area 16 is located in the first figure and its area position is indicated by dots, and the detection pattern of the area is as shown in the second (a) figure The first detection pattern 24 is shown, in which the pattern 24 and the region 16 are represented by the same dot shape for the sake of identification, and the following calibration regions and detection patterns follow the representation method, and the first The arrangement of the detection patterns 24 is based on the first calibration pattern area 16 as the center of an axis (0, 0), and the coordinates (1 + 4a, 0), (-1-4b, 0), (0, l + 4c). ) ^ (0, -l-4d) ^ (l + 4e, H4e) ^ (-l-4f, -1- 40, (l + 4g,-; l-4g), (-l-4h, l + 4h), which is the basis for taking graphic points, where a, b, c, d, e, f, g, and h are natural numbers, when a = b = c two d = e two f = g = h = 0 , The pattern points of its detection pattern are (0,0), (1,0), (-1,0), (0,1), 0, -1), (1, 1), (-1, -1), (1, -1), (-1, 1). The second calibration pattern area 18 is formed as the second (b) The second detection pattern 26 shown in the figure, and the arrangement of the graph is centered on the axis (0, 0) of the second calibration pattern area 18, and the coordinates (2 + 4i, 0), (-2-4j , 0), (0, 2 + 4k), (0, -2-41), (2 + 4m, 2 + 4m), (-2-4n, -2-4n), (1+ 4p, -l_4p ) '(-2-4q, 2 + 4q), which is the basis for taking graphic points, where i, j, k, 1, m, η' p and q are natural numbers, when i 2 j 2 k = 1 = When m = n = p = q = 0, the pattern points of the detection pattern are (2, 0), (-2, 0), (0, 2), (0, -2), (2, 2), (-2, -2), (1, -1), (-2, 2).

1230846 五、發明說明（6) 第三校準圖案區2 0係形成一如第二（c )圖所示之第三 檢測圖案2 8，且其圖形的排列係以第三校準圖案區2 0為一 座標軸（〇，〇)中心，以座標（3 + 4r，0)，（-3-4s，0)，（0， 3 + 4t)，（0，-3-4u)，(3 + 4v, 3 + 4v)，（-3-4w，-3 - 4w)，（3 + 4z，-3-4z)，（-3-4A，3 + 4A)，為其取圖形點之依據，其中 r、s、t、u、v、w、z與 A為自然數，當 r = s = t = u = v =w = z = A = 0，其檢測圖形的圖形點為（3，0 )， （ - 3，0 )， (0， 3)， （0， -3)， （3， 3)， （-3,-3)， （3，-3)， （-3,3)。 第四校準圖案區2 2係形成一如第二（d )圖所示之第四 檢測圖案3 0，且其圖形的排列係以第四校準圖案區2 2為一 座標軸（0, 0)中心，以（4 + 4B，0)， （-4-4C，0)， （0， 4 + 4D)， （0,-4-4E)， （4+4F，4+4F)， （-4-4G，-4-4G)， （4+ 4H，-4-4H)，（-4-41， 4 + 41)，為其取圖形點的依據，其中 B、 C、 D、 E、 F、 G、 Η與 I為自然數，當B =C =D = E = F =G = Η = I = 0，其檢測圖形的圖形點為（4，0)，（-4,0)， （0， 4)， （0,-4)， （4,4)， （-4，-4)， （4，-4)， （-4, 4)。 現就本發明所示之光罩來說明本發明在進行微影光阻 檢測圖案的實施態樣，請參閱第三（a)圖與第三（b)圖，為 本發明之一最佳實施例，其係包括有下列步驟： 首先，提供一表面塗佈有一光阻層的碎基底，接著使 用本發明之光罩1 〇來進行步進式的曝光，習知進行步進式 的曝光動作時，其用來進行曝光檢測的圖形會產生於切割 道（scribe line)，本發明依循之，而最佳的曝光結果將1230846 V. Description of the invention (6) The third calibration pattern area 2 0 forms a third detection pattern 28 as shown in the second (c) diagram, and the arrangement of the pattern is based on the third calibration pattern area 2 0 as The center of a standard axis (〇, 〇), with coordinates (3 + 4r, 0), (-3-4s, 0), (0, 3 + 4t), (0, -3-4u), (3 + 4v, 3 + 4v), (-3-4w, -3-4w), (3 + 4z, -3-4z), (-3-4A, 3 + 4A), which are the basis for taking graphic points, where r, s, t, u, v, w, z, and A are natural numbers. When r = s = t = u = v = w = z = A = 0, the pattern points of the detection pattern are (3, 0), ( -3,0), (0, 3), (0, -3), (3, 3), (-3, -3), (3, -3), (-3,3). The fourth calibration pattern area 22 forms a fourth detection pattern 30 as shown in the second (d) diagram, and the arrangement of the graphics is centered on the fourth calibration pattern area 22 as an axis (0, 0). To (4 + 4B, 0), (-4-4C, 0), (0, 4 + 4D), (0, -4-4E), (4 + 4F, 4 + 4F), (-4- 4G, -4-4G), (4+ 4H, -4-4H), (-4-41, 4 + 41), which are the basis for taking graphic points, among which B, C, D, E, F, G , Η and I are natural numbers. When B = C = D = E = F = G = Η = I = 0, the pattern points of the detection pattern are (4, 0), (-4, 0), (0, 4), (0, -4), (4,4), (-4, -4), (4, -4), (-4, 4). The photomask shown in the present invention is used to describe the implementation of the present invention in the lithography photoresist detection pattern. Please refer to FIG. 3 (a) and FIG. 3 (b), which is one of the best implementation of the present invention. For example, the system includes the following steps: First, provide a broken substrate with a photoresist layer on the surface, and then use the photomask 10 of the present invention to perform stepwise exposure. It is known to perform stepwise exposure. At that time, the graphics used for exposure detection will be generated on the scribe line. The present invention follows this, and the best exposure result will be

第10頁 1230846 五、發明說明（7) 如第三（a)所示其外部圖案區14將會於切割道（scribe line)疊放，因此隨著步進式曝光的進行，第一校準圖案 區16、第二校準圖案區18、第三校準圖案區20與第四校準 圖案區2 2的圖形座標將重疊而形成依照座標（〇，〇 )， (1， 0)， （-1， 0)， （0， 1)， （0， -1)， （1， 1)， （-1， -1)， (1， -1)， （-1， 1)， （2,0)， （-2,0)， （0， 2)， （0， -2)， (2，2)，（-2，-2)，（1，-1)，（-2，2)，（3,0)，（-3,0)， （0， 3)， （0， -3)， （3， 3)， （-3,-3)， （3，-3)，（- 如 而，的由放 生之 \1/ ， 差3曲係疊 產示 形 誤，扭點罩 生顯 ο 圖 有C生測光 產形 3, 3)，（4, 0)，（-4, 0)，（0, 4)，（0, -4)，（4, 4 4 )，（ 4，- 4 )，（ - 4， 4 )所構成如第三（b )圖所示之 同’’米’f字體的對準量測圖案，。 當對準量測圖案的”米”的字體因光罩的疊放 形成如第四（a)圖所示之檢測點（3，0 )，（ - 3，0 )， (0，-3)，（3，3)，（-3，-3)，（3，-3)，（-3,3)產 情況時，可經由其檢測點之座標推論出該係列檢 第三校準圖案區所貢獻之，因而得知其右上角之 有了誤差，如第四（b)圖所示光罩疊放情況。 其中為方便說明於在第三（a)圖與第四（a)有 校準圖案區疊置的部分，於圖中以編織的網狀圖 綜上所述，本發明係為一種具有微影光阻檢測圖案之 光罩及其檢測方法，其係於光罩之外部圖案區形成檢測圖 案，於步進式曝光製程後，對光阻顯影後之檢測圖形之進 行外觀檢查（AD I )，以獲得製程時第一層光阻層是否有光Page 10 1230846 V. Description of the invention (7) As shown in the third (a), the outer pattern area 14 will be stacked on the scribe line, so as the stepwise exposure proceeds, the first calibration pattern The graphic coordinates of the area 16, the second calibration pattern area 18, the third calibration pattern area 20, and the fourth calibration pattern area 22 will overlap to form a coordinate according to the coordinates (0, 0), (1, 0), (-1, 0). ), (0, 1), (0, -1), (1, 1), (-1, -1), (1, -1), (-1, 1), (2, 0), ( -2,0), (0, 2), (0, -2), (2, 2), (-2, -2), (1, -1), (-2, 2), (3, 0), (-3,0), (0, 3), (0, -3), (3, 3), (-3, -3), (3, -3), (-such as From the release of \ 1 /, the difference of the three-curve system is incorrect, and the twist point mask is displayed. The picture shows the C-photometry shape 3, 3), (4, 0), (-4, 0), (0 , 4), (0, -4), (4, 4 4), (4,-4), (-4, 4) constitute the same `` m'f font as shown in the third (b) figure Alignment measurement pattern. When the "m" font of the measurement pattern is aligned, the detection points (3,0), (-3,0), (0, -3) shown in Figure 4 (a) are formed due to the overlay of the photomask. , (3, 3), (-3, -3), (3, -3), (-3,3) can be deduced from the coordinates of their detection points by the third calibration pattern area of the series Contribution, so we know that there is an error in the upper right corner, as shown in the fourth (b) of the photomask overlay. Among them, for the convenience of explanation, the third (a) and fourth (a) areas with the calibration pattern are overlapped, and the woven net pattern is summed up in the figure. The present invention is a lithographic light A mask for a resist detection pattern and a detection method thereof. The detection pattern is formed on the outer pattern area of the mask. After the stepwise exposure process, the appearance inspection (AD I) of the detection pattern after the photoresist development is performed. Whether the first photoresist layer has light when obtaining the process

1230846 五、發明說明（8) 罩疊製誤差，來避免於習知製程裡因第一光阻層之光罩疊 製誤差而造成後續製程的成本浪費，且此時工程師可透過 檢測圖案扭曲的部分，將可臆測出為何步驟（s t e p )產生對 準失誤，而進行機台調整動作。 惟以上所述者，僅為本發明一較佳實施例而已，並非 用來限定本創作實施之範圍，故舉凡依本發明申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修飾 ，均應包括於本發明之申請專利範圍内。 【圖號說明】 10光罩 1 2佈局圖案區 1 4外部圖案區 16第一校準圖案區 18第二校準圖案區 2 0第三校準圖案區 2 2第四校準圖案區 2 4第一檢測圖案 2 6第二檢測圖案 2 8第三檢測圖案 3 0第四檢測圖案1230846 V. Description of the invention (8) Mask stacking error to avoid cost wastage in subsequent processes due to mask stacking error of the first photoresist layer in the conventional process. At this time, engineers can detect the distortion of the pattern by detecting In part, it is possible to detect why a step has caused an alignment error and perform a machine adjustment operation. However, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of this creative implementation. Therefore, for example, the equal changes and changes in shape, structure, characteristics and spirit described in the scope of the patent application for the present invention and Modifications should be included in the scope of patent application of the present invention. [Illustration of the drawing number] 10 photomask 1 2 layout pattern area 1 4 external pattern area 16 first calibration pattern area 18 second calibration pattern area 2 0 third calibration pattern area 2 2 fourth calibration pattern area 2 4 first detection pattern 2 6 second detection pattern 2 8 third detection pattern 3 0 fourth detection pattern

第12頁 1230846 圖式簡單說明 第一圖係本發明之光罩區域分佈圖，其係用來說明佈局圖 案區、外部圖案區與第一 /第二/第三/第四校準圖案區的 相對位置。 第二（a)圖至第二（d)圖係用來說明本發明之第一 /第二/第 三/第四校準圖案。 第三（a )圖至第三（b )圖係用來說明本發明於最佳曝光狀態 下，光罩的第一 /第二/第三/第四校準圖案區將疊製，使 得第一 /第二/第三/第四檢測圖案呈現最佳校準圖案。Page 121230846 Brief description of the first diagram The first diagram is a distribution map of the mask area of the present invention, which is used to explain the relative of the layout pattern area, the outer pattern area and the first / second / third / fourth calibration pattern area. position. The second (a) to second (d) diagrams are used to illustrate the first / second / third / fourth calibration patterns of the present invention. The third (a) to third (b) diagrams are used to illustrate that the first / second / third / fourth calibration pattern areas of the photomask will be stacked under the optimal exposure state of the present invention, so that the first The / second / third / fourth detection pattern presents the best calibration pattern.

第四（a)圖至第四（b)圖係用來說明本發明於應用於當右上 方之光罩有疊製曝光狀態下，檢測圖案將呈現的狀況。The fourth (a) to fourth (b) diagrams are used to illustrate the application of the present invention to the state that the detection pattern will appear when the photomask on the upper right has a stacked exposure state.

第13頁Page 13

Claims (1)

1230846 六、申請專利範圍 1 · 一種具有微影光阻檢測圖案之光罩，其包括有： 一佈局圖案區；以及 一外部圖案區，其係位於該佈局圖案區的外圍，且其 上形成有： 一第一校準圖案區，其檢測圖案的排列係以該第一 校準圖案區中心為一座標軸（0，0 )中心，以座標 (l+4a，0)，（ + 4b，0)，（0，l+4c)，（0，-1-4d)，（l+4e，l+4e)，（ - 1 - 4f，- 1 - 4f )，（l+4g，_ l-4g)，與（-l-4h，l+4h)於第一校準圖案區取檢 測圖形點，其中a、b、c、d、e、f g、與 h為自 然數； 一第二校準圖案區，其檢測圖形取點的排列係以該 第二校準圖案區中心為一座標軸（0，0 )中心，以 座標（2+4i，0)， （-2-4j，0)， （0， 2+4k)， （0，-2- 41)，(2 + 4ra, 2 + 4m)，（ -2-4η，-2-4η )，（1+4ρ，-1-4ρ)，與（-2-4q，2 + 4q)於第二校準圖案區取檢 測圖形點，其中i、 j、k、1、m、η、p與q為自然 數； 一第三校準圖案區，其檢測圖形取點的排列係以該 第三校準圖案區中心為一座標軸（0，0 )中心，以 座標（3+4r,0)， （-3-4s，0)， （0,3+4t)， （0,-3- 4u)，（3 + 4v，3 + 4v)，（-3-4w，-3-4w)，（3 + 4z，-3-4z)，與（-3-4A，3 + 4A)於第三校準圖案區取檢 測圖形點，其中r、s、t、u、v、w、z與A為自然1230846 VI. Scope of patent application 1 · A photomask with a lithographic photoresist detection pattern, which includes: a layout pattern area; and an external pattern area, which is located on the periphery of the layout pattern area and is formed thereon : A first calibration pattern area, the arrangement of the detection pattern is based on the center of the first calibration pattern area as an axis (0,0), and the coordinates (l + 4a, 0), (+ 4b, 0), ( 0, l + 4c), (0, -1-4d), (l + 4e, l + 4e), (-1-4f,-1-4f), (l + 4g, _l-4g), and (-L-4h, l + 4h) take the detection pattern points in the first calibration pattern area, where a, b, c, d, e, fg, and h are natural numbers; a second calibration pattern area, whose detection pattern The arrangement of points is based on the center of the second calibration pattern area as the center of an axis (0,0) and the coordinates (2 + 4i, 0), (-2-4j, 0), (0, 2 + 4k), (0, -2- 41), (2 + 4ra, 2 + 4m), (-2-4η, -2-4η), (1 + 4ρ, -1-4ρ), and (-2-4q, 2 + 4q) take detection pattern points in the second calibration pattern area, where i, j, k, 1, m, η, p, and q are natural numbers; For the three calibration pattern areas, the arrangement of the detection pattern points is based on the center of the third calibration pattern area as a center axis (0,0) and the coordinates (3 + 4r, 0), (-3-4s, 0), (0,3 + 4t), (0, -3- 4u), (3 + 4v, 3 + 4v), (-3-4w, -3-4w), (3 + 4z, -3-4z), And (-3-4A, 3 + 4A) take the detection pattern points in the third calibration pattern area, where r, s, t, u, v, w, z, and A are natural 第14頁 1230846 六、申請專利範圍 數；以及 一第四校準圖案區，其檢測圖形取點的排列係該第 四圖案區中心為一座標軸（0，0 )中心，以座標（4 + 4B，0)， （-4-4C，0)， (0, 4+4D)， （0，-4-4Ε)， (4 + 4F, 1+4F)，（-4-4G，-4-4G)，(4 + 4Η, -4-4Η)， 與（-4 - 4 I，4 + 4 I )於第四校準圖案區取檢測圖形 點，其中B、C、D、E、F、G、Η與I為自然數。 2 ·如申請專利範圍第1項所述之具有微影光阻檢測圖案 之光罩，其中該a^b^c^d^e^f二g=h。 3 ·如申請專利範圍第1項所述之具有微影光阻檢測圖案 之光罩，其中該i= j二k= 1 =m=n=p=q。 4 ·如申請專利範圍第1項所述之具有微影光阻檢測圖案 之光罩，其中該r= s二t =u= v = w= z =A。 5 .如申請專利範圍第1項所述之具有微影光阻檢測圖案 之光罩，其中該B=C=D二E二F=G=H=I。 6 .如申請專利範圍第1項所述之具有微影光阻檢測圖案 之光罩，其中該 a=b=c=d=e= j = k= l= m = n = p = r = s = t = u = v 二 w =z 二 A二 B=C=D=E=F二G 二 H=Io 7 . —種微影光阻檢測圖案之檢測方法，其係包括下列步 驟： 提供一 ί夕基底，其上係具有一光阻層； 使用一包含有佈局圖案區與一外部圖案區的光罩對該 光阻層進行步進式曝光，其中該外部圖案區係位於Page 14 1230846 VI. Number of patent application scopes; and a fourth calibration pattern area, the arrangement of detection pattern points is that the center of the fourth pattern area is a center of an axis (0, 0), and the coordinates (4 + 4B, 0), (-4-4C, 0), (0, 4 + 4D), (0, -4-4E), (4 + 4F, 1 + 4F), (-4-4G, -4-4G) , (4 + 4Η, -4-4Η), and (-4-4 I, 4 + 4 I) take the detection pattern points in the fourth calibration pattern area, where B, C, D, E, F, G, Η And I is a natural number. 2. The photomask having a lithographic photoresist detection pattern as described in item 1 of the scope of the patent application, wherein the a ^ b ^ c ^ d ^ e ^ f and g = h. 3. The reticle with a lithographic photoresist detection pattern as described in item 1 of the scope of the patent application, wherein i = j = k = 1 = m = n = p = q. 4 · The photomask having a lithographic photoresist detection pattern as described in item 1 of the scope of the patent application, wherein r = s = t = u = v = w = z = A. 5. The photomask having a lithographic photoresist detection pattern as described in item 1 of the scope of patent application, wherein the B = C = D = E = F = G = H = I. 6. The photomask having a lithographic photoresist detection pattern as described in item 1 of the scope of patent application, wherein the a = b = c = d = e = j = k = l = m = n = p = r = s = t = u = v two w = z two A two B = C = D = E = F two G two H = Io 7. —A lithographic photoresist detection pattern detection method, which includes the following steps: Provide a The substrate is provided with a photoresist layer thereon; the photoresist layer is exposed stepwise by using a photomask including a layout pattern area and an external pattern area, wherein the external pattern area is located at 第15頁 1230846 六、申請專利範圍 該佈局圖案區的外圍，且其上形成有： 一第一校準圖案區，其檢測圖形的排列係以該第一 校準圖案區中心為一座標轴（〇，〇)中心，以座標 (l+4a，0)，（ + 4b，0)，（0，l+4c)，（0，-卜4(1) ，（l+4e，l+4e)，（-Hf’-Hf)，(l+4g, -l-4g )，與（-：l-4h，l+4h)於第一校準圖案區取檢測圖 形點，其中a、b、c、d、e、f、g與 h為自然數 一第二校準圖案區，其檢測圖形排列係以該第二校 準圖案區中心為一座標軸（0，0 )中心，於第二校 準圖案區，以座標（2+4i，0)， （-2-4j，0)， （0， 2 + 4k)’（0，-2_41)，（2 + 4in，2 + 4ni)，（-2-4n，-2-4n)， （l+4p，-l-4p)， （-2-4q，2+4q)於第二校準 圖案區取檢測圖形點，其中i、 j、k、 1、m、η、 p與q為自然數； 一第三校準圖案區，其檢測圖形的排列係以該第三 校準圖案區中心為一座標軸（0，0 )中心，於第三 校準圖案區以座標（3 + 4r，0)，（-3-4s，0)，（0,3 + 4t)， （0，-3-4u)， （3+4v， 3+4v)， (-3-4w,-3-4w )，（3+4z，-3-4z)， （-3-4A，3+4A)於第三校準 圖案區取檢測圖形點，其中r、s、t、u、v、w、 z與A為自然數；以及 一第四校準圖案區，其檢測圖形的排列係以該第四 校準圖案區中心為一座標軸（0，0 )中心，於第四Page 15 1230846 VI. Scope of patent application The periphery of the layout pattern area is formed with: a first calibration pattern area, and the arrangement of the detection pattern is based on the center of the first calibration pattern area as an axis (0, 〇) Center, with coordinates (l + 4a, 0), (+ 4b, 0), (0, l + 4c), (0, -bu 4 (1), (l + 4e, l + 4e), ( -Hf'-Hf), (l + 4g, -l-4g), and (-: l-4h, l + 4h) take the detection pattern points in the first calibration pattern area, where a, b, c, d, e, f, g, and h are natural numbers and a second calibration pattern area, and the detection pattern is arranged with the center of the second calibration pattern area as a center of the axis (0, 0), and in the second calibration pattern area, the coordinates ( 2 + 4i, 0), (-2-4j, 0), (0, 2 + 4k) '(0, -2_41), (2 + 4in, 2+ 4ni), (-2-4n, -2- 4n), (l + 4p, -l-4p), (-2-4q, 2 + 4q) take the detection pattern points in the second calibration pattern area, where i, j, k, 1, m, η, p and q is a natural number; a third calibration pattern region whose detection pattern is arranged with the center of the third calibration pattern region as an axis (0, 0) center, in The three calibration pattern areas have coordinates (3 + 4r, 0), (-3-4s, 0), (0,3 + 4t), (0, -3-4u), (3 + 4v, 3 + 4v), (-3-4w, -3-4w), (3 + 4z, -3-4z), (-3-4A, 3 + 4A) Take the detection pattern points in the third calibration pattern area, where r, s, t , U, v, w, z, and A are natural numbers; and a fourth calibration pattern region whose detection pattern is arranged with the center of the fourth calibration pattern region as a center of the axis (0, 0), in the fourth 第16頁 1230846 六、申請專利範圍 校準圖案區以（4+4B，0)， （-4-4C，0)， （0， 4+ 4D)， （0，-4-4E)， （4+4F， l+4F)，（-4-4G，-4- 4G)， （4+4H， -4-4H)， （-4-4I，4+4I)於第四校 準圖案區取檢測圖形點，其中B、C、D、E、F、 G、H與I為自然數；以及 對該光阻層實施顯影，以同時形成佈局圖案與光阻 檢測圖案。 8 .如申請專利範圍第7項所述之微影光阻檢測圖案之檢 測方法，其中該a = b = c = d二e二f = g = h。 9 .如申請專利範圍第7項所述之微影光阻檢測圖案之檢 測方法，其中該i = j = k = 1 = m = n = p = qw 1 0 .如申請專利範圍第7項所述之微影光阻檢測圖案之檢 測方法，其中該r = s = t = u = v = w = z = A。 1 1.如申請專利範圍第7項所述之微影光阻檢測圖案之檢 測方法，其中該B =C = E二F二G = Η = I。 1 2.如申請專利範圍第7項所述之微影光阻檢測圖案之檢 測方法，其中該 a = b = c = d = e = f = g = h = i = j = k = 1 = m = n = p = q=r= s^t^u^v^w = z = A=B::rC=D = E = F = G = H:::: Io 1 3.如申請專利範圍第7項所述之微影光阻檢測圖案之檢 測方法，其中該檢測圖案係以一光學儀器檢測之，用 以確定光罩的對準與疊置是否正確。 1 4.如申請專利範圍第1 2項所述之微影光阻檢測圖案之檢 測方法，其中該檢測圖案將呈現π米π字圖案。Page 16 1230846 Sixth, the patent application range calibration pattern area is (4 + 4B, 0), (-4-4C, 0), (0, 4+ 4D), (0, -4-4E), (4+ 4F, l + 4F), (-4-4G, -4-4G), (4 + 4H, -4-4H), (-4-4I, 4 + 4I) Take the detection pattern points in the fourth calibration pattern area , Where B, C, D, E, F, G, H, and I are natural numbers; and developing the photoresist layer to form a layout pattern and a photoresist detection pattern at the same time. 8. The method for detecting a lithographic photoresist detection pattern according to item 7 in the scope of the patent application, wherein a = b = c = d = e = f = g = h. 9. The method for detecting a lithographic photoresist detection pattern according to item 7 in the scope of patent application, wherein i = j = k = 1 = m = n = p = qw 1 0. The detection method of the lithography photoresist detection pattern described above, wherein r = s = t = u = v = w = z = A. 1 1. The detection method of the lithography photoresist detection pattern described in item 7 of the scope of the patent application, wherein the B = C = E = F = G = Η = I. 1 2. The detection method of the lithographic photoresist detection pattern as described in item 7 of the scope of the patent application, wherein a = b = c = d = e = f = g = h = i = j = k = 1 = m = n = p = q = r = s ^ t ^ u ^ v ^ w = z = A = B :: rC = D = E = F = G = H :::: Io 1 3. The detection method of the lithography photoresist detection pattern described in item 7, wherein the detection pattern is detected by an optical instrument to determine whether the alignment and stacking of the photomask are correct. 1 4. The method for detecting a lithographic photoresist detection pattern as described in item 12 of the scope of patent application, wherein the detection pattern will present a π-meter-π pattern. 第17頁Page 17
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Publication number Priority date Publication date Assignee Title
CN110727167A (en) * 2018-07-17 2020-01-24 中芯国际集成电路制造(上海)有限公司 Graph generation method and mask preparation method
CN110727167B (en) * 2018-07-17 2023-10-27 中芯国际集成电路制造(上海)有限公司 Graph generation method and mask plate preparation method

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