TWI669566B - Photomask Applied For Stitching Photolithography Process, Halftone Photomask And Related Manufacturing Method - Google Patents

Abstract

The invention discloses a photomask for a splicing lithography process, which is used to transfer a layout diagram to a substrate, wherein the layout diagram includes repeating side-by-side pattern units. The photomask includes a light-transmitting substrate, a light-shielding layer, and a halftone layer. The surface of the light-transmitting substrate defines at least one exposure area, at least one light-shielding area, and a splicing line as a boundary between the exposure area and the light-shielding area. The light-shielding layer is disposed on the surface of the light-transmitting substrate and at least in the light-shielding area, and the projection range of the light-shielding layer on the surface of the light-transmitting substrate is different from the range of the light-shielding area. Part of the halftone layer is provided in the exposure area and its pattern corresponds to the pattern unit of the layout. When a photomask is applied to a splicing lithography process, a plurality of exposures are performed using a splicing line as a splicing boundary to form a transfer pattern that is spliced to each other and corresponds to a pattern unit.

Description

Photomask, halftone photomask used for splicing lithography process and manufacturing method thereof

The invention relates to a halftone mask and a manufacturing method of the halftone mask, in particular to a halftone mask used in a stitching lithography process and a related manufacturing method.

The diameter of wafers currently used in semiconductor and lithography processes is about 200 millimeters (mm) to 300 millimeters. The maximum exposure area for a single exposure of a traditional photomask is about 26 mm x 33 mm. The lithography pattern is the smallest on the wafer. The feature size is about 0.35 microns. When it is necessary to make a wafer whose size exceeds the maximum exposure area (such as a wafer of an X-ray image sensor), it is necessary to use a stitching lithography process to perform multiple exposure lithography, and then stitch the lithography patterns to complete the large-size wafer. Production. However, in the conventional technology, defects are likely to occur at the splicing place of the lithographic pattern, which causes problems such as short circuits, open circuits, or electrical changes in the fabricated electronic components. Therefore, the industry must continue to study related technologies to improve the splicing lithographic process.

According to an embodiment of the present invention, a photomask for a splicing lithography process is provided for transferring a layout image to a substrate through a splicing lithography process, wherein the layout image includes a pattern unit, and the pattern units are repeatedly arranged side by side on the layout. Figure inside. The photomask includes a light-transmitting substrate, a light-shielding layer, and a halftone layer. The surface of the light-transmitting substrate defines at least one exposure area, at least one splicing line, and at least one light-shielding area. The line is the boundary between the exposure area and the shading area. The light-shielding layer is disposed on the surface of the light-transmitting substrate and at least in the light-shielding area. The projection range of the light-shielding layer on the surface of the light-transmitting substrate is different from the range of the light-shielding area. The half-tone layer is provided between the light-shielding layer and the light-transmitting substrate. Some of the half-tone layers are located in the light-shielding area, some of the half-tone layers are located in the exposure area, and the pattern of the half-tone layers in the exposure area corresponds to Pattern unit. When a photomask is used in a splicing lithography process, the photomask is used for multiple exposure steps, and the stitching line of the photomask is used as the stitching boundary of the exposure step to form a plurality of splicing on the substrate corresponding to the pattern unit. Transfer pattern.

According to an embodiment of the present invention, a photomask for a splicing lithography process is further provided, which is used to transfer a layout diagram to a substrate through a splicing lithography process, wherein the layout diagram includes at least a first pattern unit And a second pattern unit, and the first pattern unit is repeated side by side in the layout diagram. The photomask includes a light-transmitting substrate, a light-shielding layer, and a halftone layer. An exposed area, a peripheral light-shielding area, and an interval light-shielding area are defined on the surface of the light-transmitting substrate. The exposure area includes at least a first exposure area unit and a second exposure area unit. The peripheral light-shielding area is located on the outer edge of the light-transmitting substrate. It surrounds the exposure area, and the interval light-shielding area is located at least between the first exposure area unit and the second exposure area unit. The light-shielding layer is disposed on the surface of the light-transmitting substrate and at least in the peripheral light-shielding area and the interval light-shielding area. The halftone layer is disposed between the light-shielding layer and the light-transmitting substrate, and the pattern of a part of the halftone layer located in the first exposure area unit corresponds to the pattern of the first half of the halftone layer located in the second exposure area unit. On the second pattern unit. When the photomask is applied to the splicing lithography process, the method includes performing a plurality of first exposure steps by using a first exposure area unit of the photomask and performing at least one second exposure step by using a second exposure area unit to form each other on the substrate. The plurality of first transfer patterns corresponding to the first pattern unit and at least one second transfer pattern corresponding to the second pattern unit are spliced, and when the first exposure step is performed, the second exposure area unit is covered so that it cannot be disabled. Light is transmitted, and when the second exposure step is performed, the first exposure area unit is covered to prevent light transmission.

According to an embodiment of the present invention, a manufacturing method of a photomask for a splicing lithography process is also provided. The photomask is used to transfer a layout image to a substrate through a splicing lithography process. The layout image includes a pattern unit. , And the pattern units are repeated side by side in the layout diagram. The manufacturing method includes first providing a light-transmitting substrate, the surface of which is defined with at least one exposure area, at least one splicing line, and at least one light shielding area, wherein the splicing line is a boundary between the exposure area and the light shielding area. Next, a patterned half-tone layer and a patterned light-shielding layer are formed on the light-transmitting substrate. The half-tone layer is located between the light-transmitting substrate and the light-shielding layer. Part of the half-tone layer is located in the light-shielding area. The tone layer is located in the exposure area, and the pattern of a part of the halftone layer located in the exposure area corresponds to the pattern unit, and the light shielding layer is at least located in the light shielding area, and the projection range of the light shielding layer on the surface of the light-transmitting substrate is different from the light shielding The extent of the zone. When the photomask is applied to the splicing lithography process, the photomask is used for a plurality of exposure steps, and the stitching line of the photomask is used as the stitching boundary of the exposure step to form a plurality of splicing on the substrate corresponding to the pattern unit. Transfer patterns.

According to an embodiment of the present invention, a method for manufacturing a halftone mask is further provided. First, a light-transmitting substrate is provided and a predetermined area of a film detection mark is defined thereon. Then, a half-tone layer and a light-shielding layer are sequentially formed on the surface of the light-transmitting substrate. Then, a first patterning process is performed on the half-tone layer and the light-shielding layer, a light-shielding pattern is defined in a central part in the predetermined area, and a part of the light-shielding layer and a part of the half-tone layer outside the light-shielding pattern in the predetermined area are removed. . Then, a second patterning process is performed on the light-shielding layer. A half-light-shielding pattern is defined in a central portion of the predetermined area, and a part of the light-shielding layer in the half-light-shielding pattern is removed to expose a half-tone layer in the half-light-shielding pattern. The light-shielding pattern is smaller than the light-shielding pattern, and after the second patterning process, the light-shielding layer in the predetermined area is defined as the light-shielding mark portion of the film detection mark, and a part of the half-tone layer exposed by the light-shielding layer in the predetermined area is defined as film detection. The halftone mark part of the mark. Then, it is detected whether the center point of the halftone mark portion and the center point of the light-shielding mark portion overlap, and if there is no overlap, it is judged that an error occurs in the production of the halftone mask.

10‧‧‧Layout

10a‧‧‧ Linear element

10b‧‧‧hole element

100, 200‧‧‧ Mask

100’‧‧‧ lithography pattern

102‧‧‧ Transparent substrate

104‧‧‧ Halftone Layer

106‧‧‧ shading layer

108‧‧‧ linear pattern

1081‧‧‧The first lithography linear pattern

1082‧‧‧Second lithography linear pattern

110‧‧‧ dummy pattern

1101‧‧‧The first lithographic dummy pattern

1102‧‧‧Second lithographic dummy pattern

112‧‧‧ opening

202‧‧‧film inspection mark

204‧‧‧Planned area

206‧‧‧Shading pattern

208‧‧‧Semi-shielded pattern

300‧‧‧First mark definition diagram

302‧‧‧Shadow Marker Pattern

350‧‧‧Second Mark Definition

352‧‧‧ Halftone Marker Pattern

A‧‧‧Area

D1‧‧‧ first direction

D2‧‧‧ Second direction

DE‧‧‧ repeated exposure area

DP‧‧‧Dummy Pattern Department

d1‧‧‧distance

EP‧‧‧ Extension

HM‧‧‧Halftone Marking Department

L1‧‧‧ length

MR‧‧‧Mark range department

R1‧‧‧Exposure area

R11‧‧‧First exposure zone unit

R12‧‧‧Second exposure zone unit

R13, R14, R15, R16, R17, R18, R19‧‧‧ exposure zone unit

R2‧‧‧ shade area

R2a‧‧‧peripheral shading area

R2b‧‧‧ Interval shading area

SM‧‧‧ Shading Mark Department

SP‧‧‧Shading Department

ST‧‧‧Splicing line

ST’‧‧‧ base stitching line

U1, U2, U3, U4, U5, U6, U7, U8, U9‧‧‧ pattern units

W1, W2, W3, W4, W5‧‧‧Width

FIG. 1 is a schematic diagram of an original layout diagram to be transferred to a substrate surface through a lithography process.

FIG. 2 is a partially enlarged schematic diagram of a pattern unit according to the first embodiment of the present invention.

3 to 5 are schematic diagrams of a photomask used for a splicing lithography process and a manufacturing method thereof according to the first embodiment of the present invention.

FIG. 6 is a partial schematic view of a lithographic pattern formed by a photomask used for a splicing lithographic process according to the first embodiment of the present invention.

FIG. 7 is a partially enlarged schematic diagram of a photomask used for a splicing lithography process according to a second embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a photomask used for the splicing lithography process according to the second embodiment of the present invention along the section line C-C 'of FIG. 7. FIG.

FIG. 9 is a partially enlarged schematic diagram of the third embodiment of the present invention corresponding to the pattern unit of FIG. 1.

FIG. 10 is a partially enlarged schematic diagram of a photomask used for a splicing lithography process according to a third embodiment of the present invention.

FIG. 11 is a schematic cross-sectional view of a photomask used for the splicing lithography process according to the third embodiment of the present invention, taken along the section line D-D 'of FIG. 10. FIG.

FIG. 12 is a schematic diagram of a photomask used for a splicing lithography process according to a fourth embodiment of the present invention.

13 to 17 are schematic diagrams of a photomask used for a splicing lithography process and a manufacturing method thereof according to a fourth embodiment of the present invention.

In order to make a person skilled in the art who is familiar with the technical field of the present invention can further understand the present invention, the preferred embodiments will be enumerated below, and the accompanying drawings will be described in detail to explain the photomask of the present invention, its manufacturing method, and the desired achievement efficacy.

Please refer to FIG. 1 to FIG. 5, wherein FIG. 1 is a schematic diagram of an original layout diagram to be transferred to a substrate surface through a lithography process, and FIG. 2 is a first embodiment of the present invention corresponding to the pattern unit of FIG. 1 Partially enlarged schematic diagrams, FIG. 3 to FIG. 5 are schematic diagrams of a photomask applied to a splicing lithography process and a manufacturing method thereof according to the first embodiment of the present invention, wherein FIG. 3 is a first embodiment of the present invention for the splicing lithography The photomask of the manufacturing process, FIG. 4 is a partially enlarged schematic diagram of the photomask used for the splicing lithography process of the present invention corresponding to the area A shown in FIG. 3, and FIG. 5 is the photomask of the present invention for the splicing lithography process. A schematic cross-sectional view taken along section line BB 'in FIG. 3. The present invention provides a photomask for a splicing lithography process, which is used to transfer the layout 10 shown in FIG. 1 to a substrate through the splicing lithography process. Among them, the layout diagram 10 shown in FIG. 1 refers to the layout diagram of the entire circuit or electronic component of a chip in the product, which includes a plurality of repeating patterns side by side in the layout diagram 10, and the first diagram is represented by the pattern unit U1 These repeating patterns are pattern units. It is worth mentioning that when transferring the layout plan 10 to the substrate, the stitching lithography process is used to repeat the pattern of the pattern unit U1 at different positions on the substrate and stitch these patterns together, so the length or area of the layout plan 10 It is not limited to the size of a single exposure area in the lithography process. For example, when the layout plan 10 is to be transferred to a substrate with a length or area larger than a single irradiation area of a stepper or scanner in a general lithography process, multiple lithography processes (or exposure processes) are performed multiple times. (Or exposure step), and the entire layout pattern 10 is transferred to the substrate completely by the stitching technique. In other words, the photomask described in this embodiment is particularly suitable for the stitching lithography process to make the length or area larger than that of the general lithography process. The layout of the area that can be completed by a single irradiation is transferred to the substrate, for example, the lithographic pattern unit U1 is repeatedly exposed and stitched side by side, but it is not limited to this. As shown in FIG. 2, in this embodiment, the pattern unit U1 includes at least one linear element 10 a extending along the first direction D1 to the boundary of the pattern unit U1, wherein FIG. 2 uses three linear elements 10 a as an example. Specifically, during the splicing lithography process, the pattern units U1 of the lithography on the substrate will be side by side with each other, so that the linear elements 10a in adjacent lithography patterns are spliced into a linear pattern that exceeds a single exposure area. This is to make a single pattern longer than a single pattern Element U1 size linear element, but not limited to this.

As shown in FIGS. 3 to 5, the present invention provides a photomask 100 for a splicing lithography process, which is used to transfer the pattern unit U1 in the layout diagram 10 to a substrate. The photomask 100 includes a light-transmitting substrate 102, a half-tone layer 104, and a light-shielding layer 106. Wherein, at least one exposure region R1, at least one splicing line ST, and at least one light-shielding region R2 are defined on the surface of the light-transmitting substrate 102, and the splicing line ST is a boundary between the exposure region R1 and the light-shielding region R2. The material of the light-transmitting substrate 102 includes quartz, but is not limited thereto. The halftone layer 104 is disposed on the surface of the light-transmitting substrate 102. A portion of the halftone layer 104 is disposed in the light-shielding region R2, and a portion of the halftone layer 104 is disposed in the exposure region R1 and is located in the exposure region R1. The pattern corresponding to the pattern unit U1, that is, the halftone layer 104 located in the exposure area R1 is used to define the pattern corresponding to the pattern unit U1. During the lithography process, the halftone layer 104 pattern in the exposure region R1 is transferred to the substrate by exposing the exposure region R1. The light transmittance of the halftone layer 104 of the present invention ranges from about 3% to about 20%, such as 6%. Examples of the material of the halftone layer 104 include chromium oxynitride (CrON), chromium oxide (CrO), molybdenum silicon nitride oxide (MoSizOxNy), or amorphous carbon and silicon nitride (SiN), but not limited thereto. The light-shielding layer 106 is disposed on the surface of the light-transmitting substrate 102 and the half-tone layer 104, that is, the half-tone layer 104 is disposed between the light-shielding layer 106 and the light-transmitting substrate 102. The light-shielding layer 106 is provided at least in the light-shielding region R2, and according to the present invention, the projection range of the light-shielding layer 106 on the surface of the light-transmitting substrate 102 is different from the range of the light-shielding region R2. In other words, the shape or area of the light-shielding layer 106 does not vary. Exactly the same shape or area as the light-shielding region R2. The light transmittance of the light shielding layer 106 is 0%, and the material is, for example, chromium (Cr), but is not limited thereto. According to the present invention, when the photomask 100 is applied to the splicing lithography process, the photomask 100 is used for multiple exposure steps, and the stitching line ST of the photomask 100 is used as the stitching boundary of the exposure step to form mutual splicing on the substrate. And corresponding to the plurality of transfer patterns of the pattern unit U1. In detail, in this embodiment, since the pattern unit U1 includes a linear element 10a as shown in FIG. 2 extending to the boundary of the pattern unit U1, a part of the halftone layer 104 in the exposure area R1 of the photomask 100 includes at least one The linear pattern 108 extends along the first direction D1 and is connected to the splicing line ST, corresponding to the linear element 10a. As shown in FIG. 4, this embodiment Take the halftone layer 104 as an example in which the exposure region R1 includes three linear patterns 108. Furthermore, please refer to FIG. 4 and FIG. 5 at the same time. The part of the halftone layer 104 located in the light-shielding region R2 includes a light-shielding portion SP and a dummy pattern portion DP, where the dummy pattern portion DP includes at least one dummy pattern 110 and is located in the light-shielding Between the portion SP and the linear pattern 108, and both ends of the dummy pattern 110 are connected to the linear pattern 108 and the light-shielding portion SP, respectively. According to the present invention, the width W1 of the dummy pattern 110 in a second direction D2 is substantially the same as the width of the linear pattern 108 in the second direction D2. Therefore, it can also be considered that the dummy pattern 110 is a linear pattern 108 in the first direction D1. Extension in which the second direction D2 and the first direction D1 intersect. In this embodiment, the two are perpendicular to each other as an example. The length L1 of the dummy pattern 110 in the first direction D1 ranges from about 0.08 micrometers (μm) to about 0.4 micrometers. In this embodiment, 0.2 micrometers are taken as an example, but not limited thereto. In other words, it can be considered that the linear pattern of the linear pattern 108 is designed to extend in the first direction D1 by 0.2 micrometers to the light-shielding portion SP of the halftone layer 104. It should be noted that the length L1 of the dummy pattern 110 in the first direction D1 may be determined according to the tolerance of the lithography machine, for example, it may be half of the tolerance of the lithography machine. For example, when the allowable error of the lithography machine is reflected on the photomask as 0.4 micrometer, the length L1 of the dummy pattern 110 in the first direction D1 may be designed as 0.2 micrometer, but not limited thereto. On the other hand, the light-shielding portion SP of the halftone layer 104 and the projection of the light-shielding layer 106 on the surface of the light-transmitting substrate 102 at least partially overlap. In this embodiment, the pattern of the light-shielding portion SP near the linear pattern 108 and the dummy pattern 110 is near. Approximately the same as the light-shielding layer 106, that is, the projections of the two on the surface of the light-transmitting substrate 102 are substantially the same, and have the same pattern or area, and the light-shielding layer 106 and the light-shielding portion SP are smaller than the light-shielding area R2. Furthermore, the light shielding layer 106 exposes the dummy pattern portion DP, that is, the projections of the light shielding layer 106 and the dummy pattern portion DP on the surface of the light-transmitting substrate 102 do not overlap. The light-shielding portion SP and the light-shielding layer 106 cover most of the light-shielding area R2 and are used to block light from passing through the photomask 100. In addition, compared with the dummy pattern 110 of the dummy pattern portion DP, the width of the light shielding portion SP in the second direction D2 is larger than the width W1 of the dummy pattern 110 in the second direction D2. In short, according to this embodiment, since the halftone layer 104 of the exposure region R1 has a linear pattern 108, the halftone layer 104 of the light-shielding region R2 is specifically designed to have a dummy pattern portion DP and a light-shielding portion SP, and the dummy pattern portion The width of the dummy pattern 110 of the DP pair It should correspond to the linear pattern 108, which is an extended pattern of the linear pattern 108, and is located between the linear pattern 108 and the adjacent light-shielding layer 106, and the light-shielding portion SP and the light-shielding layer 106 are separated from the splicing line ST by a distance, which is a dummy The length L1 of the pattern 110.

Please refer to FIG. 6, which is a partial schematic view of a lithographic pattern formed by a photomask used for a splicing lithographic process according to the first embodiment of the present invention. As shown in FIG. 6, in this embodiment, the lithographic pattern 100 'is formed by using the photomask 100 to perform multiple exposure steps at different positions. Specifically, in the two exposure steps, a common adjacent base splicing line ST ′ (corresponding to the splicing line ST shown in FIG. 4) is used as the boundary of the exposure area, thereby stitching the adjacent exposure areas to form a lithography. Pattern 100 '. In other words, the exposure using the photomask 100 to form the lithographic pattern 100 ′ includes at least one photolithography process (ie, one exposure step each) on each side of the substrate splicing line ST ′. The upper stitching line ST corresponds to the base stitching line ST ′ as the exposure boundary of the exposure area R1. For example, in one exposure step, a first lithographic linear pattern 1081 corresponding to the linear pattern 108 and a first lithographic dummy pattern 1101 corresponding to the dummy pattern 110 are formed on the left side of the base splicing line ST ′, and the first lithographic linear pattern is The pattern 1081 is adjacent to the base stitching line ST ′, and the first lithographic dummy pattern 1101 is located to the right of the base stitching line ST ′, that is, the base stitching line ST is located at the first lithographic linear pattern 1081 and the first lithographic dummy pattern 1101. Junction. In another lithographic process, a second lithographic linear pattern 1082 and a second lithographic dummy pattern 1102 are formed on the right side of the base splicing line ST '. The second lithographic linear pattern 1082 is located on the base splicing line ST'. And the second lithographic dummy pattern 1102 is located on the left side of the base stitching line ST '. Therefore, the overlapping portion of the second lithographic linear pattern 1082 and the first lithographic dummy pattern 1101 on the substrate indicates repeated exposure in two exposure steps, and the first lithographic linear pattern 1081 and the second lithographic dummy pattern on the substrate are repeatedly exposed. The overlapping portion 1102 is also repeatedly exposed in the two exposure steps, which is the repeated exposure area DE. In this embodiment, the first lithographic dummy pattern 1101 and the second lithographic dummy pattern 1102 in the lithographic pattern 100 'are corresponding to the dummy pattern 110 in the photomask 100. Due to the length of the dummy pattern 110 in the first direction D1, The L1 range is, for example, about 0 μm to 0.2 μm, Then, in the case of a 1 / 4-size lithography process, the lengths of the first lithographic dummy pattern 1101 and the second lithographic dummy pattern 1102 in the first direction D1 are about 0 micrometers to about 0.05 micrometers, so The length of the repeated exposure region DE in the first direction D1 is the sum of the two, that is, the range is about 0 micrometers to about 0.1 micrometers, but not limited thereto. The present invention uses the aforementioned stitching line ST as the boundary of the element pattern exposure region R1 for repeated exposure, and is specifically designed to have a dummy pattern 110 in the light-shielding region R2, so that the lithographic pattern 100 'corresponding to the linear pattern 108 of the mask 100 can be reduced. The error. For example, when the lithographic pattern 100 'corresponding to the linear pattern 108 includes a metal wire pattern, the chance of short circuit or disconnection when the metal wire pattern is spliced can be reduced, and the electrical performance of the metal wire can be improved, thereby improving repeated exposure. Accuracy of the lithographic pattern 100 'of the area DE.

It can be known from the above that, according to the present invention, a method for fabricating a photomask for a splicing lithography process includes providing a light-transmitting substrate 102, the surface of which is defined with an exposure area R1, a light-shielding area R2, and an area between the light-exposing area R1 and the light-shielding area R2. The splicing line ST at the boundary then forms a patterned half-tone layer 104 and a patterned light-shielding layer 106 on the light-transmitting substrate 102. The half-tone layer 104 is located between the light-transmitting substrate 102 and the light-shielding layer 106 and is located on the exposure. The pattern of a part of the halftone layer 104 in the region R1 corresponds to the pattern unit U1. The light-shielding layer 106 is provided at least in the light-shielding region R2, and the projection range of the light-shielding layer 106 on the surface of the light-transmitting substrate 102 is different from the range of the light-shielding region R2. It is worth noting that when the pattern unit U1 in the layout diagram 10 to be transferred to the substrate includes a linear element 10a extending along the first direction D1 to the boundary of the pattern unit U1, it is formed in the exposure when the photomask 100 is manufactured. Part of the halftone layer 104 in the region R1 includes a linear pattern 108 corresponding to the linear element 10a extending along the first direction D1 and connected to the splicing line ST, and part of the halftone layer 104 in the light-shielding region R2 further includes a light-shielding portion SP And the dummy pattern portion DP, wherein the dummy pattern portion DP includes at least one dummy pattern 110 located between the light-shielding portion SP and the linear pattern 108 as an extension of the linear pattern 108, and both ends thereof are respectively connected to the linear pattern 108 and the light-shielding portion SP. In addition, the width of the light shielding portion SP in the second direction D2 is greater than the width of the dummy pattern 110 in the second direction D2. For example, the light shielding portion SP and the light shielding layer 106 are on the surface of the light-transmitting substrate 102. The projections at least partially overlap. Furthermore, the projected area of the light-shielding layer 106 on the surface of the light-transmitting substrate 102 in this embodiment is smaller than the light-shielding region R2, and the dummy pattern portion DP is exposed, so that the dummy pattern 110 can be lithographically onto the substrate during the lithography process. With the design of the dummy pattern part DP, a repeated exposure area DE can be formed during the stitching lithography process, so as to improve the lithography effect of the linear elements near the stitching place after the lithography.

The photomask used in the splicing lithography process and the manufacturing method of the present invention are not limited to the embodiments described above, and may have other embodiments or modified embodiments. For clarity and simplicity of description, the same components in subsequent embodiments or modified embodiments will be labeled with the same reference numerals. In order to simply compare the differences between the first embodiment and its variations, and the differences between the first and other embodiments, the differences in the different embodiments or variations will be described later, and the same parts The features will not be repeated.

Please refer to FIG. 7 to FIG. 8. FIG. 7 is a partially enlarged schematic view of a photomask used for the splicing lithography process according to the second embodiment of the present invention. The portion shown corresponds to the area A in FIG. 3 and FIG. 8 FIG. 7 is a schematic cross-sectional view of a photomask used in the splicing lithography process according to the second embodiment of the present invention, taken along the section line CC ′ of FIG. 7. Compared with the first embodiment shown in FIG. 4, the projection area of the light-shielding portion SP on the surface of the light-transmitting substrate 102 in this embodiment is larger than the projection area of the light-shielding layer 106 on the surface of the light-transmitting substrate 102, that is, the light-shielding layer 106. The boundary adjacent to the splicing line ST is shifted outward along the first direction D1 by a distance d1, which is equal to the width of the exposed light shielding portion SP. In other words, in the first direction D1, there is a distance d1 between the light shielding layer 106 and the dummy pattern 110, and the distance d1 in this embodiment is, for example, about 0.4 micrometers to about 2 micrometers, but not limited thereto. Since the sidewalls of the patterned light-shielding layer are generally prone to defects when making a photomask, for example, uneven sidewalls will affect the quality of the lithographic pattern formed by the subsequent photomask. Therefore, this embodiment is designed to shield the photomask 100 from light. All or part of the inner boundary of the layer 106 is shifted to the outside by a distance d1, so that the distance between all or part of the light shielding layer 106 and the dummy pattern part DP or the stitching line ST can be reduced, which can reduce defects in the sidewall of the light shielding layer 106 and cause damage to the dummy pattern 110. Affect, or affect subsequent lithographic patterns. A variation of this embodiment In the halftone layer 104 of the photomask 100, the dummy pattern portion DP is not provided. Therefore, the inner edge of the light shielding portion SP of the halftone layer 104 is immediately adjacent to the splicing line ST, and there is still a distance d1 between the light shielding layer 106 and the splicing line ST. That is, the light-shielding layer 106 exposes the half-tone layer 104 with the same width as the distance d1 in the light-shielding region R2. This design also shifts the inner edge of the light-shielding layer 106 to the outside, which can avoid the sidewalls caused by the light-shielding layer 106 during production. Defects affect the lithography effect in the exposed area R1.

Please refer to FIG. 9 to FIG. 11, where FIG. 9 is a partially enlarged schematic diagram of the third embodiment of the present invention corresponding to the pattern unit of FIG. 1, and FIG. 10 is a light used for the splicing lithography process according to the third embodiment of the present invention. A partially enlarged schematic view of the mask corresponds to the area A in FIG. 2, and FIG. 11 is a schematic cross-sectional view of the photomask used for the splicing lithography process according to the third embodiment of the present invention, taken along the section line D-D ′ in FIG. 10. . In this embodiment, the pattern unit U1 of the layout diagram 10 to be transferred includes hole elements 10b, and FIG. 9 uses nine hole elements 10b as an example. Therefore, a part of the halftone layer 104 of the photomask 100 in the second embodiment of the present invention also includes at least one opening 112 corresponding to the hole element 10b. Furthermore, in this embodiment, in accordance with the pattern design of the halftone layer 104 in the exposure area R1, the light shielding layer 106 further includes an extension portion EP located in the exposure area R1 and disposed between the opening 112 and the splicing line ST. Among them, in the direction of the shortest distance from the opening 112 to the splicing line ST (that is, the first direction D1 in FIG. 10), the extension EP has a width W2, that is, the inner edge of the light shielding layer 106 is directed inward by the splicing line ST. The width W2 is shifted, and the width W2 ranges from about 0.4 micrometers to about 4.0 micrometers, such as 2.0 micrometers, but is not limited thereto.

According to this embodiment, the manufacturing method of the photomask used for the splicing lithography process of the present invention is different from the first embodiment in that when the pattern unit U1 includes the hole element 10b, that is, in the exposure area R1 of the photomask 100 When the halftone layer 104 includes an opening 112 corresponding to the hole element 10b, when the photomask 100 is manufactured, the light shielding layer 106 is designed so that its inner edge is shifted into the exposure region R1, that is, the patterned light shielding is formed. The layer 106 will include an extension EP located in the exposure area R1 and disposed between the opening 108b and the stitching line ST. Between the holes 112 and the light shielding layer 106. The design that the inner edge of the light-shielding layer 106 is moved from the stitching line ST to the exposure area R1 can improve the problem of photoresistance loss caused by light leakage at the stitching during the previous lithographic process, thereby improving the lithographic effect and enabling After the process, a sufficient thickness of photoresist can be retained near the splicing place, which improves the accuracy of the lithography process and the yield of the components.

Please refer to FIGS. 12 to 16 and also refer to FIG. 1, where FIG. 12 is a schematic view of a photomask used for a splicing lithography process according to a fourth embodiment of the present invention, and FIGS. 13 to 17 are A schematic diagram of a photomask used in the splicing lithography process and its manufacturing method according to the fourth embodiment, wherein FIG. 13 and FIG. 14 are diagrams of the film detection marks of the photomask used in the splicing lithography process in the fourth embodiment of the present invention, respectively. Enlarged cross-section and top view. As shown in FIG. 12, the photomask 200 in this embodiment is used to transfer the layout plan 10 shown in FIG. 1 to a substrate through a splicing lithography process, wherein the photomask 200 is a half-tone photomask, and the layout plan 10 includes at least one The first pattern unit and a second pattern unit. The first pattern unit is repeatedly arranged side by side in the layout plan 10, and the element patterns in the first pattern unit and the second pattern unit are different. For example, the layout diagram 10 shown in FIG. 1 includes the pattern units U1, U2, U3, U4, U5, U6, U7, U8, U9, and the element patterns and distributions of these pattern units are different. The pattern units U1 is repeated side by side in the middle area of the floor plan 10, and other pattern units are located in the peripheral area of the floor plan 10. Similar to the first embodiment, the mask 200 in this embodiment includes a light-transmitting substrate 102, a half-tone layer 104, and a light-shielding layer 106. The light-transmitting substrate 102 defines an exposure area R1, a peripheral light-shielding area R2a, and an interval light-shielding area R2b on the surface of the light-transmitting substrate 102. In order to make the figure clear and easy to interpret, the exposure area R1 in FIG. 12 is represented by a dot-like dot pattern. The peripheral light-shielding region R2a is located on the outer edge of the light-transmitting substrate 102 and surrounds the exposure region R1, and the interval light-shielding region R2b is located between the exposure region units of the exposure region R1 so that the exposure region units are separated from each other. The exposure area R1 includes at least a first exposure area unit R11 and a second exposure area unit R12, which respectively correspond to the pattern unit U1 and the pattern unit U2 in the layout diagram 10. The spaced-apart light shielding area R2b is at least located in the first exposure area unit R1a and the first exposure area unit R1a. The two exposure area units R1b are separated from each other. The pattern of the interval light-shielding region R2b in this embodiment is a "well" shape, and the exposure region R1 is divided into nine Block exposure area unit, so the exposure area R1 also includes other exposure area units R13, R14, R15, R16, R17, R18, R19, corresponding to the pattern units U3, U4, U5, U6, U7, U8, U9 in the layout diagram 10, respectively , But not limited to this. The light-shielding layer 106 of this embodiment is disposed at least in the peripheral light-shielding region R2a and the interval exposure region R2b, and the half-tone layer 104 is disposed between the light-shielding layer 106 and the light-transmitting substrate 102, and is simultaneously located in the exposure region R1 and the peripheral light-shielding. Area R2a and interval exposure area R2b. Moreover, the pattern of the partial halftone layer 104 located in the first exposure region unit R11 corresponds to the first pattern unit, for example, the pattern unit U1 shown in FIG. 1 is located in the partial halftone layer 104 of the second exposure region unit R12. The pattern corresponds to the second pattern unit, for example, the pattern unit U2 shown in FIG. 1, and the rest may be deduced by analogy. When the photomask 200 is applied to the splicing lithography process, it includes performing a plurality of first exposure steps by using the first exposure area unit R11 of the photomask 200 and performing at least one second exposure step by using the second exposure area unit R12. A plurality of first transfer patterns corresponding to the first pattern unit and at least one second transfer pattern corresponding to the second pattern unit are formed on the substrate to splice each other, and during the first exposure step, the first and second transfer patterns on the mask 200 are covered. An area other than the exposure area unit R11, such as the second exposure area unit R12 and the exposure area units R13, R14, R15, R16, R17, R18, and R19, so that they cannot transmit light, and during the second exposure step, The areas other than the second exposure area unit R12 on the reticle 200 are covered, for example, the first exposure area unit R11 and the exposure area units R13, R14, R15, R16, R17, R18, R19, so as to prevent light transmission.

It is worth noting that the photomask 200 in this embodiment further includes at least one film detection mark 202 disposed at a corner of at least one of the first exposure area unit R11 and the second exposure area unit R12. In this embodiment, the photomask 200 includes eight film detection marks 202 as an example. Among them, four film detection marks 202 are set at four corners of the first exposure area unit R11, and the other four film detection marks 202 are respectively It is set at a corner of the second exposure area unit R11, the exposure area units R14, R16, and R19, but it is not limited thereto. As shown in FIGS. 13 and 14, the film detection mark 202 includes a mark range portion MR, a light-shielding mark portion SM, and a half-tone mark portion HM, where the light-shielding mark portion SM means that the light-shielding layer 106 is provided in the film layer detection. Mark 202 In the middle part, the halftone mark part HM refers to the part of the halftone layer 104 exposed by the light shielding layer 106 in the film detection mark 202, and the mark range part MR means that the outer edge part of the entire film detection mark 202 is transparent. The range occupied by the optical substrate 102 is a plan view shown in FIG. 14. According to the present invention, the shape of the outer edge of the light-shielding mark portion SM and the halftone mark portion HM in the film detection mark 202 is substantially the same. For example, the shape of the outer edge is rectangular or square, but the size of the outer edge of the light-shielding mark portion SM is larger than The outer edge size of the halftone mark portion HM. For example, the maximum width W3 of the film detection mark 202 in this embodiment is about 45 microns, the maximum width W4 of the light-shielding mark portion SM is about 15 microns, and the maximum width W5 of the halftone mark portion HM is about 5 microns, But not limited to this. It should be noted that in the film detection mark 202, the half-tone layer 104 is provided in both the light-shielding mark portion SM and the half-tone mark portion HM but not in the mark range portion MR, and the light-shielding layer 106 is provided only in the light-shielding mark portion SM. It is not provided inside the halftone mark portion HM and the mark range portion MR.

According to the present invention, when the mask 200 is manufactured, the film detection mark 202 can be selectively manufactured together, so as to understand the manufacturing yield of the mask 200. Please refer to FIG. 15 and FIG. 16. First, a light-transmitting substrate 102 is provided, and a predetermined area 204 of a film detection mark 202 to be made is defined on the light-transmitting substrate 102, and its size is the outside of the mark range portion MR. Margin size. Then, a half-tone layer 104 and a light-shielding layer 106 are sequentially formed on the surface of the light-transmitting substrate 102 so as to cover the light-transmitting substrate 102. Next, a first patterning process is performed on the half-tone layer 104 and the light-shielding layer 106, and the light-shielding layer 106 and the half-tone layer to be removed in the predetermined area 204 are defined by using the first symbol definition diagram 300 shown in FIG. 15. 104, where the first mark definition diagram 300 includes a light-shielding mark portion pattern 302, which defines the range of the light-shielding mark portion SM, so the central portion of the first patterning process in the predetermined area 204 defines the outer edge of the light-shielding pattern 206, and A part of the light-shielding layer 106 and a part of the half-tone layer 104 other than the light-shielding pattern 206 in the predetermined area 204 are removed to form a patterned half-tone layer 104. Next, a second patterning process is performed on the light-shielding layer 106. A semi-light-shielding pattern 208 is defined in the light-shielding pattern 206 in the central portion in the predetermined area 204, and a part of the light-shielding layer 106 in the half-light-shielding pattern 208 is removed and the A cross-sectional view of the halftone layer 104 in the light-shielding pattern 208 is shown in FIG. 13. The second patterning process is profitable A semi-shielding pattern 208 is defined by using the second mark definition diagram 350 shown in FIG. 17, where the second mark definition diagram 350 includes a halftone mark portion pattern 352. In the second patterning process, the halftone mark corresponding to the halftone mark is removed. Part of the light-shielding layer 106 of the partial pattern 352 further forms a patterned light-shielding layer 106 so that the exposed half-tone layer 104 forms a half-light-shielding pattern 208. Therefore, it can be seen from the foregoing that the halftone mark portion pattern 352 is smaller than the light-shielding mark portion pattern 302. After the second patterning process, the production of the film detection mark 202 is completed, wherein the light-shielding layer 106 in the predetermined area 204 is defined as the light-shielding mark portion SM of the film detection mark 202, and the halftone exposed in the predetermined area 204 The layer 104 is defined as the halftone mark portion HM of the film layer detection mark 202. The foregoing first patterning process and the second patterning process, for example, first form a photoresist layer (not shown) on the light shielding layer 106, and then use the first mark definition diagram 300 and the second mark definition diagram 350 to electronically The beam irradiates the photoresist layer, and after development, the light shielding layer 106 and the halftone layer 104 are etched, but not limited thereto. According to the present invention, after the film detection mark 202 is produced, it can be detected whether the center point of the halftone mark portion HM and the center point of the light-shielding mark portion SM overlap. If there is no overlap, it can be judged that the production of the halftone mask 200 has occurred. The error, that is, the graphics of the first patterning process and the second patterning process do not correspond exactly. In this embodiment, the mask 200 includes eight film detection marks 202. Therefore, if the center point of the halftone mark portion HM in each of the film detection marks 202 overlaps the center point of the light-shielding mark portion SM, or there is a position difference between the two Within a predetermined error range, it can be determined that the patterns of the halftone layer 104 and the light shielding layer 106 defined in the first patterning process and the second patterning process are in good alignment, and the accuracy of the photomask 200 is confirmed. .

It should be noted that the method for making the film layer detection mark 202 and detecting the pattern corresponding to the half-tone layer 104 and the light-shielding layer 106 in this embodiment can be applied not only to the photomask of the splicing lithography process, but any two or more film layers need to be made. The mask (such as a half-tone mask) can be used to make the film detection mark 202 to understand the yield of the mask.

It can be known from the foregoing that the photomask of the present invention is applied to a splicing lithography process, and The multiple pattern units are transferred to the substrate through multiple exposure steps to define a repeating circuit pattern. The length or area of a single electronic component or wafer produced may not be limited by the size of a single exposure area. In other words, when the entire circuit layout or the size or length of an electronic component is larger than a single irradiated area of a general lithography process, the lithography pattern unit can be repeatedly exposed using the photomask for the splicing lithography process of the present invention, and a size greater than Circuits or electronic components with a single pattern unit size, such as image sensor components with a large number of pixels and a large size, or large-sized components with a single substrate containing only a single chip. The above components are exemplified by X-ray sensor chips. But it is not limited to this. In addition, the range of the light-shielding layer designed by the present invention is different from the range of the light-shielding area outside the splicing line, which can improve the yield of the splicing lithography process. For example, when the layout diagram includes linear elements, the corresponding linear pattern on the mask is extended to the light-shielding area to form a dummy pattern, and the inner edge of the light-shielding layer is shifted outward and the area of the light-shielding layer is reduced. In this case, the light shielding layer is designed to extend into the splicing line, so that the light shielding layer is closer to the opening of the halftone layer. With the above design, the lithographic effect of the lithographic pattern on the substrate after the lithographic process can be effectively improved. . On the other hand, the photomask introduced in the fourth embodiment of the present invention may have multiple exposure area units, corresponding to different pattern units in the layout, and may additionally have one or more film layer detection marks set in different exposure area units. in. After the photomask is manufactured, it can be detected whether the center point of the halftone mark portion in the film detection mark and the center point of the light-shielding mark portion overlap to determine the manufacturing yield of the photomask.

The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the scope of patent application of the present invention shall fall within the scope of the present invention.

Claims (22)

A photomask for stitching lithography process is used to transfer a layout image to a substrate through a stitching lithography process. The layout image includes a pattern unit, and the pattern unit is repeated side by side. In the layout diagram, the photomask includes: a light-transmitting substrate, the surface of which is defined with at least one exposure area, at least one splicing line, and at least one light shielding area, wherein the splicing line is the boundary between the exposure area and the light shielding area; A light-shielding layer is disposed on the surface of the light-transmitting substrate and at least in the light-shielding area, wherein a projection range of the light-shielding layer on the surface of the light-transmitting substrate is different from a range of the light-shielding area; and a halftone layer, Between the light-shielding layer and the light-transmitting substrate, part of the half-tone layer is located in the light-shielding area, part of the half-tone layer is located in the exposure area, and part of the half-tone layer is located in the exposure area. The pattern corresponding to the pattern unit; wherein when the mask is applied to the stitching lithography process, the mask is used for multiple exposure steps, and the stitching line of the mask is used as the stitching boundary of the exposure steps. , Stitching another and forming a plurality of transfer patterns corresponding to the pattern element on the substrate. The photomask for the stitching lithography process according to claim 1, wherein a part of the halftone layer located in the exposure area includes at least one linear pattern extending along a first direction, and the linear pattern is connected to the stitching And the portion of the halftone layer located in the light-shielding area includes a light-shielding portion and a dummy pattern portion, wherein the dummy pattern portion includes at least one dummy pattern, the dummy pattern is located between the light-shielding portion and the linear pattern and is located in the Between the linear pattern and the light-shielding layer, and two ends of the dummy pattern are respectively connected to the linear pattern and the light-shielding portion, and the width of the light-shielding portion in a second direction is greater than the width of the dummy pattern in the second direction The second direction intersects the first direction, the projection of the light-shielding layer and the dummy pattern portion on the surface of the light-transmitting substrate does not overlap, and the projection of the light-shielding portion and the light-shielding layer on the surface of the light-transmitting substrate is at least Partial overlap. The photomask for the splicing lithography process according to claim 2, wherein the length of the dummy pattern in the first direction ranges from 0.08 micrometer (μm) to 0.4 micrometer, and the dummy pattern is in the second The width in the direction is substantially the same as the width of the linear pattern in the second direction. The mask for the splicing lithography process according to claim 2, wherein a projection area of the light-shielding portion on the surface of the light-transmitting substrate is larger than a projection area of the light-shielding layer on the surface of the light-transmitting substrate. The photomask for the splicing lithography process according to claim 4, wherein in the first direction, the minimum distance between the light shielding layer and the dummy pattern is 0.4 micrometers to 2.0 micrometers. The photomask for the splicing lithography process according to claim 1, wherein a part of the halftone layer located in the exposure area includes at least one opening, and the light shielding layer includes an extension portion located in the exposure area and provided Between the opening and the splicing line. The photomask for the splicing lithography process according to claim 6, wherein the width of the extension is 0.4 micrometers to 4.0 micrometers in the direction of the shortest distance from the opening to the splicing line. The photomask used in the splicing lithography process according to claim 1, wherein the light transmittance of the halftone layer ranges from 3% to 20%, and the light transmittance of the light shielding layer is 0%. A photomask for a splicing lithography process is used to transfer a layout to a substrate via a splicing lithography process. The layout includes at least a first pattern unit and a second pattern unit. A pattern unit is repeatedly arranged side by side in the layout diagram. The mask includes: a light-transmitting substrate, the surface of which is defined with an exposure area, a peripheral light-shielding area, and an interval light-shielding area, wherein the exposure area includes at least a first exposure Area unit and a second exposure area unit, the peripheral light shielding area is located at the outer edge of the light-transmitting substrate and surrounds the exposure area, and the spaced light shielding area is at least between the first exposure area unit and the second exposure area unit A light-shielding layer provided on the surface of the light-transmitting substrate and at least in the peripheral light-shielding region and the interval light-shielding region; a half-tone layer is provided between the light-shielding layer and the light-transmitting substrate and is located in the A part of the pattern of the halftone layer in the first exposure region unit corresponds to the first pattern unit, and a part of the pattern of the halftone layer in the second exposure region unit corresponds to the second pattern unit; When the mask is applied to the splicing lithography process, it includes performing a plurality of first exposure steps by using the first exposure area unit of the photomask, and performing at least one second exposure step by using the second exposure area unit, so that A plurality of first transfer patterns corresponding to the first pattern unit and at least one second transfer pattern corresponding to the second pattern unit are formed on each other, and when the first exposure steps are performed, the first transfer pattern is covered The two exposure area units prevent light transmission, and during the second exposure step, the first exposure area units are covered to prevent light transmission. The photomask used in the splicing lithography process as described in claim 9, wherein the pattern of the spaced-apart light-shielding areas is a "well" shape, and the spaced-apart light-shielded areas divide the exposure area into nine exposure area units. The photomask for the splicing lithography process according to claim 9, further comprising a film detection mark set at a corner of at least one of the first exposure area unit and the second exposure area unit, the film The layer detection mark includes a mark range portion, a light-shielding mark portion, and a half-tone mark portion, wherein in the film layer detection mark, the half-tone layer is provided on the light-shielding mark portion and the half-tone mark portion but not on the mark Range part, the light-shielding layer is provided only on the light-shielding mark part and not on the half-tone mark part and the mark range part, the shape of the outer edge of the light-shielding mark part and the half-tone mark part is substantially the same, but the light-shielding mark The outer edge size of the portion is larger than the outer edge size of the halftone mark portion. The photomask for the splicing lithography process according to claim 11, wherein the maximum width of the film detection mark is 45 microns, the maximum width of the light-shielding mark portion is 15 microns, and the maximum width of the halftone mark portion 5 microns. A manufacturing method of a photomask for a splicing lithography process. The photomask is used to transfer a layout image to a substrate through a splicing lithography process. The layout image includes a pattern unit, and the pattern unit is repeated side by side. In the layout diagram, the manufacturing method includes: providing a light-transmitting substrate, the surface of which is defined with at least one exposure area, at least one splicing line, and at least one light-shielding area, wherein the splicing line is between the exposure area and the light-shielding area; A boundary; and forming a patterned half-tone layer and a patterned light-shielding layer on the light-transmitting substrate, wherein the half-tone layer is located between the light-transmitting substrate and the light-shielding layer, and a part of the half-tone layer is disposed on In the light-shielding area, a part of the half-tone layer is provided in the exposure area, and a part of the pattern of the half-tone layer in the exposure area corresponds to the pattern unit, and the light-shielding layer is provided at least in the light-shielding area, and the The projection range of the light-shielding layer on the surface of the light-transmitting substrate is different from the range of the light-shielding area. When the photomask is applied to the splicing lithography process, the photomask is used to perform multiple exposure steps and the light is used. This splice splice boundary such as a line exposure step to form on the substrate corresponding to each other and splice the plurality of transfer patterns of the pattern unit. The method for manufacturing a photomask for a splicing lithography process according to claim 13, wherein when the pattern unit includes a linear element extending along a first direction to a boundary of the pattern unit, it is formed in the exposure area Part of the halftone layer includes at least one linear pattern corresponding to the linear element, and the linear pattern extends along the first direction and is connected to the splicing line, and part of the halftone layer formed in the light-shielding region includes a A light-shielding portion and a dummy pattern portion, wherein the dummy pattern portion includes at least one dummy pattern, the dummy pattern is located between the light-shielding portion and the linear pattern and between the linear pattern and the light-shielding layer, and two of the dummy pattern The ends are respectively connected to the linear pattern and the light-shielding portion. The width of the light-shielding portion in a second direction is greater than the width of the dummy pattern in the second direction. The second direction intersects the first direction. The light-shielding layer. It does not overlap with the projection of the dummy pattern portion on the surface of the light-transmitting substrate, and the projection of the light-shielding portion and the light-shielding layer on the surface of the light-transmitting substrate at least partially overlaps. The method for manufacturing a photomask for splicing lithography process according to claim 14, wherein the length of the dummy pattern in the first direction ranges from 0.08 μm to 0.4 μm, and the dummy pattern is in the second direction. The width of is substantially the same as the width of the linear pattern in the second direction. The method for manufacturing a photomask for the splicing lithography process according to claim 14, wherein a projection area of the light-shielding portion on the surface of the light-transmitting substrate is larger than a projection area of the light-shielding layer on the surface of the light-transmitting substrate. The method for manufacturing a photomask for splicing lithography process according to claim 16, wherein in the first direction, a distance between the light shielding layer and the dummy pattern is 0.4 micrometers to 2.0 micrometers. The method for manufacturing a photomask for the splicing lithography process according to claim 13, wherein when the pattern unit includes a hole element, a part of the halftone layer formed in the exposure area includes an opening corresponding to the A hole element, and the light-shielding layer includes an extension portion located in the exposure area and disposed between the opening and the splicing line. The manufacturing method of the photomask for the splicing lithography process according to claim 13, wherein the light transmittance of the halftone layer ranges from 3% to 20%, and the light transmittance of the light shielding layer is 0%. A method for manufacturing a half-tone photomask, comprising: providing a light-transmitting substrate, and defining a predetermined area of a film layer detection mark on the light-transmitting substrate; and sequentially and comprehensively forming on the surface of the light-transmitting substrate A half-tone layer and a light-shielding layer; performing a first patterning process on the half-tone layer and the light-shielding layer, defining a light-shielding pattern in a central portion of the predetermined area, and removing the light-shielding pattern in the predetermined area The other part of the light-shielding layer and part of the half-tone layer; a second patterning process is performed on the light-shielding layer, a half-light-shielding pattern is defined in the central part of the predetermined area, and a part of the half-light-shielding pattern is removed The light-shielding layer exposes the half-tone layer in the half-light-shielding pattern, wherein the half-light-shielding pattern is smaller than the light-shielding pattern, and after the second patterning process, the light-shielding layer in the predetermined area is defined as the film A light-shielding mark portion of the layer detection mark; a portion of the half-tone layer exposed by the light-shielding layer in the predetermined area is defined as a half-tone mark portion of the film-layer detection mark; and detecting the half-tone mark The center point of the center point of the light shielding portion overlaps token, if there is no overlap, it is determined that the production of the halftone mask error occurs. The method for manufacturing a halftone mask according to claim 20, wherein the shape of the outer edge of the halftone mark portion and the mark range portion are substantially the same. The manufacturing method according to claim 20, wherein a maximum width of the predetermined region is 45 micrometers, a maximum width of the light-shielding mark portion is 15 micrometers, and a maximum width of the halftone mark portion is 5 micrometers.