TWI228063B - Laser trimming method and device for non-light-transmitting chip - Google Patents

Abstract

The present invention relates to a laser trimming method and device for non-light-transmitting chip. The invented device includes a platform that is controlled to move, an upper side laser device and a lower side electronic microscope photographing device. A chip is placed on a bore of the platform with a non-light-transmitting layer of a back side of the chip facing upward and a light-transmitting layer of a front side facing downward. The lower side electronic microscope photographing device is used to observe upward the light-transmitting layer of the chip for showing the arrangement, configuration, and position of each unit of the epitaxial layer. The upper side laser device is then employed to perform downward cutting on the non-light-transmitting layer of back side of the chip and the epitaxial layer to separate each individual die thereby realizing high efficiency cutting operation for mass production.

Description

1228063 V. Description of the invention (1) The invention belongs to the technical field of the present invention] An opaque crystal, especially a high position for opaque wafers [Previous technology] At present, all light is emitted on a wafer. The type crystal is an epitaxial layer. On the table, make the wafer device observe the arrayed wafers of each unit to a predetermined position, and cut out the traditional type crystal and laser cutting frequency memory wafers to become opaque layers for the positive laser cutting of the electronic cutting wafers above Good results of the cutting process resulting in crystal grains [Summary of the Invention] Diodes (L form countless cuts into individual pieces. The front side is the electric laser cutting plus the front side is facing the shape of the front side of the wafer. The independent grains are used. Back processing. But in the giant, the back side of the wafer photomicrograph is required to install a light-transmissive layer, the method requires a very low rate, making ED) densely packed grain electrode layer, the process may face down or back for operation The above aspects are the former high-efficiency gemstone layer must be placed upside down. The epitaxial layer is energy-intensive and mass-produced. Laser cutting method and device efficiency. Laser cutting method and its mounting and memory manufacturing process. The unit uses the backside as a gemstone layer, and in the middle, 'places the wafer on a work plane' and uses the electron micrograph above to show the personnel of the epitaxial layer inside the crystal moon. Dynamically adjust the work platform and laser beam to cut the wafer downward, and place it on the light-transmitting layer. It is suitable for observing high-brightness light-emitting diodes from the top and adding an opaque metal layer. And the laser beam goes down and the back opaque layer. However, this will damage the performance of the chip, which is a serious bottleneck.

2095-4902.ptd 坌 A 百 1228063___ 5. Description of the invention (2) The purpose of the present invention is to provide an opaque wafer laser cutting method and its device, which mainly use an electron microphotographic device directly below to observe The light-transmitting layer of the wafer shows the arrangement shape of each early element of the stupid crystal layer inside the wafer; it is then cut with the laser beam directly above to cut the opaque layer and the epitaxial layer on the back of the wafer, and each of them is cut to make independent The grains have reached high-efficiency cutting and mass production, which can be used in industry. '' For the purpose of disclosure, the opaque wafer laser cutting method of the present invention is to place the wafer on the center hole of the work platform so that the opaque layer on the back of the wafer faces upward and the opaque layer on the front faces downwards; Observe the light-transmitting layer of the wafer by using the electron microscope photography device directly below to display the arrangement shape and position of each unit of the epitaxial layer inside the wafer; and then cut the opacity of the back of the wafer with the laser beam directly above Layer and epitaxial layer, and each independent grain is cut out. The opaque wafer laser cutting device of the present invention includes: a controlled moving working platform, the top of which is a center hole for carrying a wafer; an upper laser device, and a laser beam of a laser generator thereof passes through a mirror And a condenser lens, and shoot the wafer directly below; and a lower electron microscopy device, which observes the epitaxial layer inside the wafer directly above the laser filter. In a feasible embodiment, it further includes an upper electron microphotographing device, which is viewed directly below through the one-way mirror and the condenser of the laser device.

Wafer. H [Embodiments] Regarding the technical means adopted by the present invention to achieve the above-mentioned objectives and their effects, viable embodiments are provided and illustrated with drawings to make the overall design more clear.

2095-4902.ptd Page 6 1228063 V. Description of the invention (3) First, please refer to FIG. 1. The opaque wafer laser cutting device of the present invention also includes a work platform (1 0) for carrying high-performance wafers and a The upper laser device (20) and the specially designed lower electron microphotographic device (30) are used to observe the epitaxial layer inside the wafer (50) in the past for operators to move and adjust the work platform (1 0). And the wafer (50) to the predetermined position, so that the laser beam directly above cuts the wafer (50), row C horizontal 1, and passing C} the arrow of the lightning C is mounted} into the hole 2} through the platform. 5 strong台 心心 影 雷 1 Control your heart. Use C 3 down flat 2 plus flat ο aerial photography filter 1 receiving middle and upper> device 2 to C and 9α map slightly over C can be born C reworking mirror} C1 is displayed in Taiwan, through rH CN1 production, and direction. Shoot CO in the first place, turn} Phase 1 {shoot} > shoot back 2 position like electricity} spin 3 with C device mine 25 heads to the C series and take 1 of 1 Taiwanese, 2 2 arrows single mirror }mine,. 3 The transition from stack to stack shows CC light. οSquare line} 彳 Mirrors want to be collected on the mirror of the platformer ’s spin} 3 上心 ο Mirror Sequence moves three to Leitu to shoot false. In the OC standard, the 5 waves are activated and placed in 3 opposite directions. The 5 set is directed to a C filter and placed}, the C is shot from 1 and the same shot is shot with the vertical,} 2 is the first positive Reverse the film to become Jinglei} and degree 02, order and such as} under the crystal and observe a ο} angle 5C1 according to} and 0 to cut slightly and look at the 12th turn C set, 4 and 5 cut out , Fangjia C1 rotary plate is installed as beam 2} c full square square} top stage C and crystal, light C6 > 6 beams of fine precision under the positive movement of the platform for the laser 2 crystal light to square 2} Acting and moving, Fang Fang Lei big C and shot, the next C direction ο work direction} set up the mirror} thunder degree and} the mirror display 3 to the horizontal 4 to set the light to learn ο the system ο the light institute C yellow vertical 1 To} light set 1 limit shot 1 set

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Description of the invention of the broken electron microphotographing device (4) Beam 'Avoid laser beam going down 0 Distribute 1 treasure C on the top} C layer to read} light} 5 references and 3 penetrations To} Effective display setting ο Make a high setting C, please ask 3 of 5 to display position 05. Cut the surface ^^ The surface C is cut, the upper layer of the crystal is set up, and the shape C is installed with the energy of light. Effective 4 penetrations, 1 row of crystal cuts} good high 1 not up to 5 and total 2 high and low C to the bottom ^ yuan} down 5 lift system hole surface} display layer single to <,. In the back of the heart, each layer of the beam is one layer of the energy-transmitting method, which belongs to the electro-transmission crystal effect. The two of the Jinfang's shots are cut} 5 under the 5 planes and the crystal cut OC fog is positive C The operator} went to add 1 slice or use 3 layers of cutting torpedo C Jingguang Li crystal correction 5 damage slice table to make it through. 5 Lei's call to C will be enough for crystal level, and the lower moving layer cannot be used alone. He will move inward and then re-transmit the drawing. He will not be on the 4th floor. Bit light, the transparent surface of the sheet through crystal grains is not radio-emissive, and the other is the opposite.} Let ZN 6 increase 1 2 square 4 C on {Mirror &gt; mirror light ο large set 1 put and C by 3 厶Oral experience 5 flat 2 work, C workers} mirror, OW shot 4 counter examples {nail placement single installation, line shadow can be taken 2 in the micro 4 display C sub-mirror and set, ,, seed x) y该 晶 ο 依 察 5. View 丨 Go straight through the next piece to the crystal connection side and go online. The light is selected by ο image selection-~ ^ shadow selection C Xu Yitai Yun, the flat film is made of 5 crystal workers 2 type inspection C system view mirror pass the square shot Add slices to ready-to-single yielders. The crystal of the wafer can not be cut through to cut the effect. The solution is high enough to emit the thunder from the beam of light. The position of the crystal is on the top view of ct tr. The micron-layer crystal display device is used to display the inner orbit of the epitaxial wafer.

2095-4902.ptd Page 8 1228063 V. Description of the invention (5) Cooperate with the laser beam directly above to cut the opaque layer and epitaxial layer on the back of the wafer, and cut the individual crystal grains without damaging them. Grain efficiency, improve yield. The above-mentioned embodiments are only for the convenience of explaining the present invention, and are not limiting. Without departing from the spirit of the present invention, various simple deformations and modifications that can be made by those skilled in this industry should still be included in the scope of patent application below. in.

2095-4902.ptd Page 9 1228063____ Brief description of the drawing Figure 1 is a front view of the laser cutting device of the embodiment of the present invention; Figure 2 is a top view of the laser device and the electron microphotograph device above in Figure 1; Fig. 3 is a top view of the laser device above Fig. 1; and Fig. 4 is a schematic diagram of the wafer laser cutting process of Fig. 1. Code description: 2) Lateral movable stage reflector collecting mirror 3 4 (1 0) Working platform (11) (1 3) Vertical movable stage (1 4) (20) Laser device (21) (2 2) Reflector (23) (25) One-way mirror (26) (3 0) Electron microscopy device (4 0) Electron microscopy device (4 2) Mirror (50) wafer (51)

(5 3) Opaque layer Rotary table (1 center L laser generator (2 4) Optical amplifier Laser filter Magnifier Light transmitting layer (5 2) Epitaxial layer

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Claims (1)

1228063 6. Scope of patent application 1. A center hole of an opaque stage. The position of the light-transmitting layer facing the light-transmitting layer of the bottom sheet; the light-distributing layer and the stupid crystal. 2. If a patent is applied for, the electric light beam. The laser is cut on the wafer so that the laser layer is directly above it, and the laser layer directly above the crystal is not crystallized. The cutting method of the first submicron cutting method is to place the wafer on the back side of the work flat with the opaque layer facing The front side square electron microphotographic device looks up to observe the arrangement shape of each unit of the epitaxial layer inside the wafer. The light beam is cut down to cut off the back of the wafer to produce individual crystal grains. The opaque wafer laser cutting method device uses the above laser filter to filter the laser. 3. A kind of controlled cutting work cutting device for opaque wafer laser cutting, including: a platform with a central hole The top ridge carries a wafer above the laser device, and the laser beam of the laser generator passes through the mirror and the collecting mirror, and is directed downward to the wafer; and a lower electron photomicrography device is passed through the laser filter. Look directly at the epitaxial layer inside the wafer. 4. As applied. Please patent. The laser cutting device for light-transmitting wafers described in item 3 above, which further includes an upper electron microphotographing device, which observes the wafer directly below the laser device through the one-way mirror and the condenser lens. . « 2095-4902.ptd Page 11