TWI227014B - Method to control the life of reading times in an optical disc and its control layer - Google Patents
Method to control the life of reading times in an optical disc and its control layer Download PDFInfo
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- TWI227014B TWI227014B TW92131834A TW92131834A TWI227014B TW I227014 B TWI227014 B TW I227014B TW 92131834 A TW92131834 A TW 92131834A TW 92131834 A TW92131834 A TW 92131834A TW I227014 B TWI227014 B TW I227014B
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Abstract
Description
五、發明說明(1) 【發明所屬之技術領域】 本發明所屬之技術領域主要在於 軟體等預錄式光碟之製作。 π U㈣ 【先前技術】 自攸1982 年第一代CD-DA(Compact Disc-Digital Audio) 二碟】世以來’並經過這些年間不斷 外,由於其製造成本低上要=此 ㊁樂ΐΐ由ί=ΐ!年限長等優點,不僅迅速席捲整個 盥音質,因而’也因光碟片更能輸出優質的畫面 ;-項很視=蓬勃發展'然而在光碟 預錄式⑶及,光碟帶來不利的影響。 雖况曰慧財產榷的保護,在今日 行的市售光碟片, 曰過被接叉,但由於現 (妒)片案去 ,、肴限制讀取次數的功能,影 (衣)片業者的利潤依然無法藉 ,、 來反應。長期以來,影(製)片堂二f 一人數(租片次數) 種不合理現象。因此—種能夠限制,2:業者間存在-為包括世界著名影·(製)片業者在:一人丈的光碟片已成 製片等,之強烈需求。〃在内,例如:華納、環球 而實際之作法則可大略分為硬 較為容易,但從過去電腦遊戲敕體的二::砉軟體法雖然 設計限制讀取次數之軟體程式』角在光碟上 又皮解的可能性卻很高。 1227014 五、發明說明(2) ' --- 1 ,碟製片業者普遍認為’唯有從光碟片硬體上做根本的防 :,才是最好解決之道。因此在美國專利第58 1 5484號 妄I先揭示以對光敏感的化合物為塗層的做法來控制光 田2 η卩,這種光碟使用前被密封於膠袋中,一旦破密封起 卍1f先透明之類似光阻劑般的塗層則與光線空氣或是 5應’成為不透明的遮蔽層,使光碟反射率 降低,造成後續無法正常讀取。 之ϊ ΐ在Ϊ國ί利6343063號中更進-步以腐蝕銘反射層 =雷射;=碟壽命’其主要特色在…層後方 與反應’損毁=之==正 揭露以透氣性高之::上代:用不透氣之密封膠袋外,亦 並在基板背面預先封貼=基板(PC substrate) 掀開膠布使用後,利用透:之膠T的方式,讓使用者在 層外,再增加—層比紹揭露可在光碟中,除銘反射V. Description of the invention (1) [Technical field to which the invention belongs] The technical field to which the present invention belongs is mainly the production of pre-recorded optical discs such as software. π U㈣ [Previous technology] Since 1982, the first generation of CD-DA (Compact Disc-Digital Audio) 2 discs] Since the beginning of the world, and after these years, because of its low manufacturing cost, it has to be = This ㊁ 乐 ΐΐ 由 ί = ΐ! Long life and other advantages, not only quickly swept the entire bathroom sound quality, so 'because the optical disc can output high-quality pictures;-very much look at = vigorous development' However, in the optical disc pre-recording type ⑶, the optical disc brings disadvantages influences. Although the protection of the intellectual property is still unknown, the commercially available optical discs have been cut off, but due to the current (jealous) film case, and the function of limiting the number of readings, the film (clothing) film industry ’s Profits still cannot be borrowed to reflect. For a long time, the film (production) film hall II f number of people (number of rental films) is an unreasonable phenomenon. Therefore-the kind that can be restricted, 2: the existence of the industry-there is a strong demand for the world-renowned film ((production) film industry: the one-person-sized optical disc has been produced, etc. 〃Including, for example: Warner, Universal, and the actual practice can be roughly divided into harder and easier, but from the past two of the computer game corpus :: 砉 Software method Although the software program is designed to limit the number of reads, the angle is on the disc But the possibility of peeling is very high. 1227014 V. Description of the invention (2) '--- 1, the disc producers generally believe that ‘the only way to prevent this problem is to do basic defense from the disc hardware. Therefore, U.S. Patent No. 58 1 5484 first disclosed the use of a light-sensitive compound as a coating to control Guangtian 2 η 卩. This optical disc was sealed in a plastic bag before use. The transparent photoresist-like coating becomes an opaque shielding layer with light, air, or light, which reduces the reflectivity of the disc, resulting in subsequent failure to read normally. The ϊ 更 in the Guoli Li No. 6463063-further step with the corrosive inscription Reflective layer = laser; = disc life 'its main feature is behind the layer and the reaction' damage = = = = is exposed to high permeability :: Previous generation: Use airtight sealing plastic bag, and pre-seal on the back of the substrate = PC substrate. After opening the tape, use the transparent T method to let the user be outside the layer, and then Addition-Layer Bissau Exposure Can Be On Discs, Except Ming Reflection
Cu、Ag π Au,兩者中^ J^n〇ble)的金屬,例如: (galvanic cell ),蚀 添入電解質形成電化學電池 應而至終失去反射居^〜無反射層成為陽極並發生腐蝕反 膨服之超級吸收劑7 f =。、或是利用在吸水後體積可大幅 光碟的壽命。θ "造成光碟體積或形狀之改變而限制 雖然上述方式可 惟這些方法的共同 ,光T 5在一旦使用後壽命急遽減少, 缺點疋哥命減少的方式與時間有關,而Cu, Ag π Au, ^ J ^ noble) metals, such as: (galvanic cell), the electrolyte is added to form an electrochemical cell, and eventually it will lose its reflection ^ ~ no reflection layer becomes the anode and occurs Corrosion anti-expansion super absorbent 7 f =. Or use the volume of the disc after absorption of water to greatly increase the life of the disc. θ " Limited due to changes in the volume or shape of the disc Although the above methods are common to all these methods, the life of the optical T 5 decreases dramatically once used, the disadvantage is that the way to reduce the life of the disc is related to time, and
1227014 五、發明說明(3) :是與使用次數有關,因此一旦 ^' 者必須要在一定時間内看完或使用,對;=後’使用 付出相同之費用顯得彼不合理。 、吊使用者亦要 發明目的: 為解決上述問題,本發明主要目的 賞或使用次數為出發點來限 =—種能夠以觀 光碟片的製作方法。 片可°p的方法以及這種 【發明内容】 預錄式光碟 基板的射壓成型 四分之 由金屬 之薄膜 面並反射後,可 一雷射光 革巴材在透 而成。當 回則為二分之一 第一圖為一習知 則是利 光碟的 次數因 用光碟的 路徑中, 此受到控 表面上形成-群具 波長長度的微小凹凸狀圖案。 明基板的凹凸狀表面濺鍍」層數 替射光知、射在具有四分之一波長 產生建没性與破壞性光程差(因 波長),使”0”與” ”之資訊得以 預錄式DVD光碟片之結構示意圖, 讀取原理,在如第一圖所示的雷 设置一層光碟讀取限制層,而使 制。 王要藉由透 低落差 射層則 十奈米 之凹凸 為經過 被解讀 本發明 射光讀 光碟讀1227014 V. Description of the invention (3): It is related to the number of uses, so once ^ 'must be finished or used within a certain period of time, yes; = after ’use It seems unreasonable to pay the same cost. The user also needs to invent the purpose: In order to solve the above problems, the main purpose of the present invention is to limit the number of rewards or uses as a starting point = a method for making discs. The method can be ° p and the method of the invention. [Summary of the invention] Pre-recorded optical disc substrate injection molding A quarter of the metal film surface and reflection, can be made by laser light leather material. When it returns, it is one-half. The first picture shows a conventional method, which is to facilitate the use of the optical disc. In the path of the optical disc, a small concave-convex pattern with a wavelength length of -groups is formed on the controlled surface. The number of layers of the spattered surface of the light-emitting substrate is known for the transmitted light, and the inconsistent and destructive optical path difference (due to the wavelength) generated when the light is radiated at a quarter wavelength, so that the information of "0" and "" can be pre-recorded. Schematic diagram of the structure of a DVD-type DVD disc, the principle of reading, a layer of a disc reading restriction layer is set on the thunder as shown in the first figure, and the system is made. Wang Yao reads through the low drop, the diffusive layer of ten nanometers is interpreted for the present invention.
此光碟頃取限制層主要係由可被雷射光誘發之相變化 合金所構成,且此相變化合金在光碟初次被讀取前呈非晶 態結構。由於非晶態結構材料在光學上呈現與玻璃(非晶 態材料之典型代表)相似之透明特徵,因此雷射光可以順The optical disc restriction layer is mainly composed of a phase change alloy which can be induced by laser light, and the phase change alloy has an amorphous structure before the optical disc is first read. Since the amorphous structure material is optically similar to glass (a typical representative of the amorphous material), the laser light can be smooth.
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利穿過該層並讀取反射層 光讀取同時,限制層上具 受到雷射光之誘發開始產 結構。而結晶態結構之材 具有反射特徵,因此雷射 反射層上之” 〇”與”;I ”訊號 合金在產生相變化時,不 並且還需要提供額外的能 (a c ΐ i v a t i 〇 n e n e r g y )。 變化’而唯有在高能量密 相變化,故光碟壽命減少 達到發明目的。 上之〃 0"盘π 1丨丨邙雜 .μ ^ 1讯唬。然而在雷射 有非晶態結構之相變化合金,則The light passes through this layer and reads the reflective layer. At the same time as the light reading, the confinement layer is induced by laser light to start producing structures. The material with crystalline structure has reflective characteristics, so the "0" and "; I" signals on the laser reflective layer do not need to provide additional energy (a c ΐ i v a t i 〇 n e n e r g y) when the phase change occurs. Change ', but only at high energy density, so the life of the disc is reduced to achieve the purpose of the invention.上 之 〃 0 " Disk π 1 丨 丨 Miscellaneous .μ ^ 1 bluff. However, phase change alloys with an amorphous structure in the laser,
生相變化反應,轉變成為結晶態 料在光學上則呈現與金屬相似並 光無法順利穿過此限制層,使得 無法被頊取。此外,由於相變化 僅溫度要達到相變化溫度以上, 量克服反應所需的活化能 因此一般的光線並不會引起相 度的雷射光照射情況下才會產生 的方式乃與使用次數有關,因此The phase change reaction, which changes to a crystalline material, is optically similar to a metal, and light cannot pass through this confinement layer smoothly, making it impossible to be captured. In addition, since the phase change only needs to reach the temperature above the phase change temperature, the amount of activation energy needed to overcome the reaction, so the general light does not cause the phase of laser light irradiation. The method is related to the number of uses, so
在已知的許多相變化合金中,最適宜做為本發明中之 限制層者是硫屬(chalcogenide )材料。1 9 6 9年Mr. 〇VShljsky首先發現包括Se、Te及Po在内的硫屬元素,在 文到f射光照射後會有非結晶態與結晶態之間的轉換。其 I純蹄(Te )元素在常溫下具有快速結晶的特點,後續研 究亦發現在碲中添加Ge、Sn、Sb、As或Se等元素可以提高 結晶溫度與改變相變化反應速率。因此利用這些特性,可 以依照所須要的相變化變態溫度與反應速率來調整合金組 成兀素與成份。例如現今CD-RW、DVD-RAM或DVD-RW常見之 Ag~In-Sb-Te、In-Sb〜Te與Ge-Sb-Te等相變化合金一般具 有150 200 ◦之變態溫度與<i〇〇 nsec的反應速率。 不過對於本案限制層材料而言,上述相變化合金材料Among many known phase change alloys, the most suitable confinement layer in the present invention is a chalcogenide material. In 1969, Mr. VShljsky first discovered that chalcogens, including Se, Te, and Po, would undergo a transition between amorphous and crystalline states after exposure to f-ray light. Its I pure hoof (Te) element has the characteristics of rapid crystallization at normal temperature. Subsequent research also found that adding Ge, Sn, Sb, As or Se to tellurium can increase the crystallization temperature and change the phase change reaction rate. Therefore, by using these characteristics, the alloy composition and composition can be adjusted according to the required phase change metamorphosis temperature and reaction rate. For example, phase change alloys such as Ag ~ In-Sb-Te, In-Sb ~ Te, and Ge-Sb-Te, which are common in today's CD-RW, DVD-RAM, or DVD-RW, generally have a transformation temperature of 150 200 ◦ and <i A reaction rate of OOnsec. However, for the material of the limiting layer in this case, the above phase change alloy material
第12頁 1227014 五、發明說明(6) 材= 無任何訊號的基板上,直接以相變 反射層直:::=面3;:=制層直接與另-片之 層的所謂可限制讀取形成控制層緊貼反射 至於有一次以上使用壽命之光碟, 碟片轉速及變態溫度下,則 =二射光功率、 化…率來做調整。料,:::二 =才=變 ;目變:的過程有兩種主梅,一是成;::=中’ i二:;可成進長大 核很困難’但成長速率極快),例如Ag二成=制型(成Page 12 1227014 V. Description of the invention (6) Material = directly on the substrate without any signal, with a phase-change reflective layer directly: :: = surface 3; Take the optical disc that forms the control layer and reflects closely and has a service life of more than one time. At the speed and abnormal temperature of the disc, it is equal to two-shot light power and conversion rate. It is expected that ::: = 2 = cai = change; the process of changing eyes: There are two main types of plums, one is success; :: = is medium; i is difficult to grow into a large core, but the growth rate is extremely fast), For example, Ag = 20%
Ge-Sb — Te。珂者因其相變化反應,在結晶離 丄:如 間就完成’因此非常適合做為捨棄式(使;後瞬 而後者因其相變化反應屬漸進式,雖二#次-ς)先,。 始就容許有一些微量的結晶態二次相)雷射 ::, 結晶態二次相生成,但每次在雷射光讀取時,处相f 缓慢成長:些’直到結晶相面積大到足以遮蔽之二、 時’光碟壽命方告終,因此非常適合做為 用"二 控制層。 便用先碟之 為使熟悉此技藝者能夠充分地利用本發明, 下的實施例中更進-步地詳細說明本發明特點,惟 j 施例僅供說明之用,而不應視為對本發明範圍之限制:貝Ge-Sb — Te. Because of its phase change reaction, Ke Ke is separated from the crystal: complete in time, so it is very suitable as a discarding type (make; later, and the latter is a progressive type because of its phase change, although the second # 次 -ς) first, . Some traces of crystalline secondary phase are allowed at the beginning) Laser ::, The crystalline secondary phase is generated, but each time the laser light is read, the phase f slowly grows: some 'until the area of the crystalline phase is large enough The second part of the masking is the end of the life of the disc, so it is very suitable for use as the second control layer. In order to enable those skilled in the art to make full use of the present invention, the following examples will further describe the features of the present invention in detail, but the examples are for illustration only and should not be considered as Limitation of the scope of the invention: shell
1227014 五、發明說明(8) " 在後繽各爐次(合金配方)之靶材製作中,均採全粒徑分 佈之粉末而不再篩選特定之粒度範圍。 革巴材之熱壓採用美國VI公司之2 5 0噸熱壓機,因含zn 之靶材因熔點較低,為避免有成份揮發損失現象,在事先 以DgC測出炫點後,根據熔點微幅修正製程參數在溫度: 300C 35〇c ’壓力:4〇4員(直徑兩忖面積),時間:ι hr之條件下’完成厚度介於6Qmnl與645 mm把材之熱壓, 經量測每塊相變化合金靶材,其密度均可高達理論值98〇/〇 以上。 成份為Te·· 91% Sb :8% Zn :1%之過共晶靶材隨即進行 濺鍍試驗’被鍍之基材則為目前光碟片最通用之透明p c substrate。雖然相變化合金靶材因其本身較脆、且散熱 能力不如一般反射層金屬靶材,因此在濺鍍過程中一度出 現有破裂,以及濺鍍時電阻匹配不穩定與電漿偏壓不穩定 之跳動現象,惟經發現當濺鍍功率控制在3 5〜5 0 kw,真空 抽至1.5 X 10-4 torr以下,氬氣流量控制在50〜60 seem 下,情況有顯著改善。在濺鍍功率及氬氣流量條件固定 下,濺鍍膜厚可直接由濺鍍時間決定。這些剛濺鍍完之碟 片甫從濺鍍機取出時呈現透明之淡黃色,惟經過數分鐘 後,該鍍層外觀卻呈金屬般之全反射狀,顯示常溫下已自 行產生非晶態轉變至結晶態反應。由DSC熱分析曲線發現 此相變化合金之所以在常溫下自行產生非晶態轉變成結晶 態反應之主要原因在於變態溫度只有約2 5 °C,並且反應之 門檻也就是活化能亦太小所致。雖然如此’經〇r· Schenk1227014 V. Description of the invention (8) " In the production of targets for each furnace (alloy formula) of Houbin, powders with full particle size distribution are used instead of screening specific particle size ranges. The hot pressing of Geba material is a 250 ton hot press from American VI company. Because the target material containing zn has a low melting point, in order to avoid the loss of component volatility, after measuring the dazzling point with DgC in advance, the melting point is based on the melting point. Slightly amended process parameters at temperature: 300C 35 ° c 'Pressure: 404 members (diameter area of 2mm), time: ι hr' finishes the thickness of 6Qmnl and 645 mm bar hot pressing The density of each phase change alloy target can be as high as over 98/0. The composition is Te ·· 91% Sb: 8% Zn: 1% hypereutectic target and then a sputtering test is performed. The substrate to be plated is the most common transparent PC substrate currently used for optical discs. Although the phase change alloy target is relatively brittle and has a lower heat dissipation capability than ordinary reflective layer metal targets, it once cracked during the sputtering process, and the resistance matching was unstable and the plasma bias was unstable during sputtering. The phenomenon of beating, but it has been found that when the sputtering power is controlled at 35 to 50 kw, the vacuum is reduced to 1.5 X 10-4 torr, and the argon flow rate is controlled at 50 to 60 seem, the situation has improved significantly. Under the conditions of fixed sputtering power and argon flow rate, the thickness of the sputtering film can be directly determined by the sputtering time. These freshly sputtered discs showed a transparent pale yellow color when they were taken out of the sputtering machine, but after a few minutes, the appearance of the plating layer was totally metallic like a reflection, indicating that an amorphous transition had occurred on its own at room temperature. Crystalline reaction. According to the DSC thermal analysis curve, it is found that the main reason for this phase change alloy to generate an amorphous to crystalline reaction at room temperature is that the transformation temperature is only about 25 ° C, and the threshold of the reaction is the activation energy is too small. To. Even so ’by 〇r · Schenk
第16頁 1227014Page 16 1227014
光碟片檢測儀針 析,發現在薄機常用之65〇⑽ 仍可完全遮蔽訊號’ 達到光碟片資訊過1〇〇㈣下,仍 …、法破讀取之發明目的 【實施例2】 α 0 Ϊ 91% Sb: 8% Ζη: 1%之過共晶靶材其變態溫度 (pt/u乃ρϊλΙ,活化能仍嫌太低’因此亦另外再設計兩組 τ 。」。 )成份配方分別為Te:74% Sb:25% Ζη:1%與 e· /G fb· 14% Zn: 2%之相變化合金,並依前述相同方式 之a孟溶煉杨化與革巴材製作。在濺鍍到空白碟片之前, pm及pm相變化合金則先以DSC進行熱分析,其結果顯 示在第二圖及第四圖。從第三圖可發現PTA4相變化合金之 變悲溫度順利提升至70。〇左右,ΔΗ也有73. 34 J/g。因此 由PTA4 $變化合金乾材所濺鍍之碟片,不僅在甫完成濺鍍 後’其溥膜外觀呈現透明,即使放置一個月之後仍然為透 明’此相變化合金薄膜(限制層)經[^7結構分析亦證 實為非晶態結構(第五圖(A ))。然而當以高能聚焦雷 射照射之後再進行X-ray結構分析,從第五圖(B )則可清 邊^現有屬於結晶形恶之尖峰(P e a k ),出現在由原本基材 及薄膜之非晶態曲線上,顯示有非晶態轉變至結晶態相變 化之發生。而此薄膜不僅成為全反射、不透明,經測試均 足以擔住雷射光之項取而達到訊號遮蔽功能。 至於PTA5相變化合金之變態溫度雖只有37 t:與原設計Disc analysis of the optical disc detector, found that the signal can still be completely shielded at 65 ℃, which is commonly used in thin machines. When the information of the optical disc is over 100 ℃, the invention purpose of reading the method [Example 2] α 0 Ϊ 91% Sb: 8% Zn: 1% of hypereutectic target and its metamorphic temperature (pt / u is ρϊλΙ, the activation energy is still too low ', so another two sets of τ are also designed. ") The composition formula is Te: 74% Sb: 25% Zn: 1% and e · / G fb · 14% Zn: 2% phase-change alloys, and in the same manner as described above, a smelting smelting and Yangba and leather materials. Prior to sputtering onto a blank disc, the pm and pm phase change alloys were first thermally analyzed by DSC. The results are shown in Figures 2 and 4. From the third figure, it can be found that the transition temperature of the PTA4 phase change alloy is smoothly increased to 70. Around 〇, ΔΗ also has 73. 34 J / g. Therefore, the discs sputtered by PTA4 $ change alloy dry material not only 'the appearance of the film is transparent after completion of sputtering, but it is still transparent even after being left for a month'. This phase change alloy film (restriction layer) is subjected to [ ^ 7 Structural analysis also confirmed the amorphous structure (fifth figure (A)). However, X-ray structure analysis can be performed after irradiation with a high-energy focused laser. From the fifth figure (B), the edge can be cleared. ^ The existing peak of crystalline evil (Peak) appears on the original substrate and film. The amorphous curve shows that the phase change from amorphous to crystalline occurs. This film not only becomes totally reflective and opaque, but it is tested to be sufficient to support the laser light and achieve the signal shielding function. As for the PTA5 phase change alloy, the transformation temperature is only 37 t: the same as the original design
第17頁 1227014 圖式簡單說明 第一圖為一習知預錄式DVD光碟片,在雷 士 示意圖。 射先碩取下之結構 第二圖為本發明中較佳實施例之可限制 * 片,在雷射光讀取下之結構示意圖;其數光碟 反射層分別濺鍍在不同之透明基板上則::= 接膠合而成。 巾者則以緊鄰方式直 =三圖為本發明PTA4相變化合金之DSC熱分析曲缘。 ^四圖為本發明PTA5相變化合金之DSC熱分析曲線。 =圖為由PTA4相變化合金所漱鑛之薄膜(限制層),在高能 來焦雷射光(A)照射前、(B)照射後之[ray繞射分析結果。 元件代表符號簡單說明: 11 12 13 14 15 16 雷射光束 弟一透明基板 反射層 接著層 第二透明基板 印刷層 21 22 23 24 25 雷射光束 第一透明基板 反射層 接著層 弟二透明基板Page 17 1227014 Brief description of the diagram The first picture is a schematic diagram of a pre-recorded DVD disc in Nexus. The structure of the structure removed by Xia Xianshuo. The second picture is a schematic diagram of the limitable * piece of the preferred embodiment of the present invention, which is read under the laser light. The reflection layers of several optical discs are sputtered on different transparent substrates: : = Glued. Those who are in the vicinity are straight. The three pictures are the DSC thermal analysis curve of the PTA4 phase change alloy of the present invention. ^ The four figures are DSC thermal analysis curves of the PTA5 phase change alloy of the present invention. = The photo shows the [ray diffraction analysis results of the thin film (restricted layer) of the ore mined by the PTA4 phase change alloy before (A) and (B) irradiation with high-energy coke laser light). Simple description of the component representative symbols: 11 12 13 14 15 16 Laser beam Diyi transparent substrate Reflective layer Next layer Second transparent substrate Printed layer 21 22 23 24 25 Laser beam First transparent substrate Reflective layer Next layer Dier transparent substrate
第19頁 1227014 圖式簡單說明 26 印刷層 27 限制層Page 19 1227014 Simple illustration 26 Printed layers 27 Restricted layers
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