TWI226858B - Thin sheet conductive film and production of the same - Google Patents

Thin sheet conductive film and production of the same Download PDF

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TWI226858B
TWI226858B TW88101662A TW88101662A TWI226858B TW I226858 B TWI226858 B TW I226858B TW 88101662 A TW88101662 A TW 88101662A TW 88101662 A TW88101662 A TW 88101662A TW I226858 B TWI226858 B TW I226858B
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Taiwan
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conductive
conductive film
metal
thin
film structure
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TW88101662A
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Chinese (zh)
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Guo-Ji Ling
Bing-Jung Jeng
Jr-Ping Jang
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Univ Fu Jen Catholic
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Abstract

This invention relates to a thin sheet conductive film, particularly to one with low resistance and high transmittance. This invention mainly employs optical interference principles among film layers to obtain a transparent, conductive multi-layer film. At least one metal film and at least one conductive non-metal film are laminated over a substrate. The metal film is a metal, metal mixture or its alloy, consisting of one selected from the followings: Cr, Al, Ti, platinum and Au. The conductive non-metal film consists of one selected from the following, an oxide, nitride, carbide, boride, semiconductor and its mixture, organic and high molecular polymer or its chemical compounds. An interface layer may be added between the metal film and the non-metal film. The interface layer may be a conductive metal, half-metal, conductive non-metal or its mixture. Since this invention includes at least one metal film, it is able to reduce resistance to obtain excellent conductivity, while implementing optical interference principles among film layers to obtain provide the thin sheet with the effect of high transmittance.

Description

經濟部中央標準局員工消費合作社印製 1226858Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 1226858

本發明係有關一種薄板型導電膜,尤其是指一種具有 低電P且及古 阿穿透率(transmittance) 之薄板型導電膜。本發 明主要县、笛 夕 &運用膜層間的光學干涉原理所設計出的透明導電 多層膜,1 ^ I 丹係於一基板上堆疊形成至少/層之金屬膜層及 ^ —層之導電非金屬膜層,該金屬膜層係金屬、金屬混 合物或装人1 一 、β金所形成,如鉻、鋁、鈦、白金、銀及金等金 ^ 、任一組合物;該導電非金屬膜層係選自具導電之氧 化物、氣〆The present invention relates to a thin-plate type conductive film, and more particularly to a thin-plate type conductive film having a low electric P and a transmittance. In the present invention, the transparent conductive multi-layer film designed by using the principle of optical interference between film layers in the main county, Di Xi & 1 ^ Dan is stacked on a substrate to form at least / layer of metal film layer and ^-layer of non-conductive Metal film layer, the metal film layer is formed of metal, metal mixture, or β gold, such as chromium, aluminum, titanium, platinum, silver, gold and other gold ^, any composition; the conductive non-metal film The layer system is selected from conductive oxides and gas

乳11物、碳化物、硼化物、半導體及其混合物、有 機^私/及古/V 同为子聚合物所組合中之任何一種或其化合物。同 日寺 上 ;5玄金屬膜層與非金屬膜層間亦可加一介面層,該介面 層係可為導電金屬、半金屬、導電非金屬或其混合物。因 v具一金屬骐層而可降低電阻以得到良好的導電率,並 曰 予干〉V原理之設計而使膜層具高穿透率等功效。 背景說明: 近來由於可攜帶型顯示器或筆記型電腦已廣泛運用, 故平板顯示器,如液晶顯示器(LCD)、薄膜電致發光顯示 & (TFEL)、電漿顯示板(PDP)等業已逐漸取代傳統陰極射 線官(CRT) ’成為新一代顯示裝置。其中又以液晶顯示器 最受嗎目。此類顯示器功率消耗較低,在電視螢幕及顯示 器的表現更可進一步取代陰極射線管。該液晶顯示器的構 成係在二片平行導電面板中間注入一液晶(liquid crystal) 再加上其他裝置而形成,其中該導電面板上設計有字母或 阿拉伯數字或點矩陣等圖案並利用該液晶之電光效應使得 上述圖案可選擇性顯示出來。 由於液晶之分子係沿著外加電埸方向排列,故其光軸 -2- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)Milk 11, carbides, borides, semiconductors and mixtures thereof, organic / private / and ancient / V are all sub-polymers or any combination thereof. On the same temple, an interface layer can also be added between the 5 metal film layer and the non-metal film layer. The interface layer can be conductive metal, semi-metal, conductive non-metal or a mixture thereof. Because v has a metal hafnium layer, the resistance can be reduced to obtain good conductivity, and the design based on the principle of V> V makes the film layer have high transmittance and other effects. Background: Recently, as portable displays or notebook computers have been widely used, flat-panel displays such as liquid crystal displays (LCD), thin-film electroluminescence displays (TFEL), and plasma display panels (PDP) have gradually been replaced. The traditional cathode ray officer (CRT) has become a new generation display device. Among them, LCD monitors are the most popular. The power consumption of such displays is low, and the performance of TV screens and monitors can further replace cathode ray tubes. The structure of the liquid crystal display is formed by injecting a liquid crystal (liquid crystal) in the middle of two parallel conductive panels and adding other devices. The conductive panel is designed with patterns such as letters or Arabic numerals or a dot matrix and uses the electro-optic of the liquid crystal. The effect allows the aforementioned patterns to be selectively displayed. Since the molecules of the liquid crystal are arranged along the direction of the external electron beam, the optical axis of the liquid crystal is -2- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm)

經濟部中央標準局員工消費合作社印製 1226858 A7 B7___ 一 五、發明説明(2 ) (optical axial)的方向係順著該外加電埸的方向,使得外 來光線可沿著該具有外加電埸之液晶區域之光軸方向輸 出’而使其對應面板之圖案顯示出來;反觀不具有外加電 埸之液晶區域,則無任何光線輸出。實際上,該導電面板 上置有若干條材質為氧化銦錫(Indium Tin Oxide,以下簡 稱為IΤ Ο)之透明電極,其一般為1 8公分長、寬2 7 0微米、 厚0.2微米以配合6 4 0 X 4 8 0點矩陣。又因該條狀I τ 〇透明電 極本身具有至少20Ω/□之電阻率(resistivity)故電極兩端具 有一些壓降(voltage)之差異,使得位於電極兩端内之液 晶所受電埸強度也跟著有些許差異,如此導致畫面品質不 良及整體功率消耗等缺點。 為解決前述問題’如在美國專利公報公告號第5,7 〇 2, 8 7 1號所揭露的改良式IT 0結構(如第一圖所示)將可達到降 低整個透明導電電極之電阻率。圖一中S代表基底其材質 是玻璃或透明塑膠,10為透明導電之ITO圖案,在該IT〇之 側邊設有鎳(Ni)12及金(Au)14二膜層,且藉由鎳和金具有 非常低之電阻率使得ITO兩端之壓降差異得以降低,並藉 此達到改良晝面品質之功效。 此種習知金屬膜層並未經任何之光學干涉處理,基本 上是不透光,所以此類金屬膜所佔之面積受到限制,否則 會影響光線穿透之量,其對光線穿透率實有待進一步改盖 之必要。 改良技術及運用手段 有鑑於習用導電膜之上述種種缺失,本發明人因而著 手構思,經苦心研究後,終有本發明產生。其係於一基板 _3_ 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐)-— (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 1226858 A7 B7___ 15. The description of the invention (2) (optical axial) is in the direction of the external electric chirp, so that the external light can follow the liquid crystal with the external electric chirp. The area's optical axis direction output 'causes its corresponding panel pattern to be displayed; on the other hand, if there is no liquid crystal area with an external battery, no light is output. In fact, the conductive panel is provided with a number of transparent electrodes made of indium tin oxide (hereinafter referred to as ITO), which are generally 18 cm long, 270 microns wide, and 0.2 microns thick to match 6 4 0 X 4 8 0 point matrix. Because the strip-shaped I τ 〇 transparent electrode itself has a resistivity of at least 20 Ω / □, there are some voltage drops across the electrode, so that the intensity of the electric field received by the liquid crystal located at both ends of the electrode also follows. There are some differences, which leads to shortcomings such as poor picture quality and overall power consumption. In order to solve the foregoing problem, the improved IT 0 structure (as shown in the first figure) as disclosed in US Patent Publication No. 5,7 〇 02, 8 71 will reduce the resistivity of the entire transparent conductive electrode. . In Figure 1, S represents a substrate whose material is glass or transparent plastic, 10 is a transparent conductive ITO pattern, and two layers of nickel (Ni) 12 and gold (Au) 14 are provided on the side of the IT0, and nickel is used. Wajin has a very low resistivity, so that the difference in voltage drop across the ITO can be reduced, thereby achieving the effect of improving the quality of the daytime surface. This kind of conventional metal film layer has not been subjected to any optical interference treatment, and is basically opaque, so the area occupied by such metal films is limited, otherwise the amount of light penetration will be affected, and its light transmission rate There is a need for further changes. Improved technology and application method In view of the above-mentioned various defects of the conventional conductive film, the inventor set out to conceive it. After painstaking research, the present invention finally came into being. It is based on a substrate _3_ This paper size applies to China National Standard (CNS) A4 (210x297 mm)-(Please read the precautions on the back before filling this page)

經濟部中央標準局員工消費合作社印製 1226858 A7 B7 五、發明説明(3 ) 上堆疊形成至少一層之金屬膜層及至少一層之導電非金屬 膜層,以達成良好的導電率,並藉光學干涉原理之設計而 使膜層具高穿透率等功效,而得以廣泛運用於發光二極體 (LED)、電致發光(EL)光源、平板光源,如:日常用的白色 平板燈源、室内外廣告用彩色平板燈源、警示用平板燈源、 儀器用平板燈源及背光板等等用途。 發明概述: 本發明主要目的係提供一種兼具較低電阻率,並具極 高穿透率之薄板型導電膜結構及其製法。 本發明主要是運用膜層光學干涉原理所設計出的透明 導電多層膜,其係於一基板上堆疊形成至少一層之金屬膜 層及至少一層之導電非金屬膜層,該金屬膜層係金屬、金 屬混合物或其合金所形成,如鉻、銘、鈦、白金、銀及金 等金屬或其任一混合物;該導電非金屬膜層係選自具導電 之氧化物、氮化物、碳化物、硼化物、半導體及其混合物、 有機物及高分子聚合物所組合中之任何一種或其化合物。 同時於該金屬膜層與非金屬膜層間亦可加一介面層,該介 面層係由金屬、半金屬、導電非金屬或其混合物。因至少 具一金屬膜層而可降低電阻以得到良好的導電率,並藉光 學干涉薄膜膜堆之設計,而形成不同厚度之膜層,以具高 光學穿透率等功效。 附圖說明: 第一圖為習知薄板型導電膜結構。 第二圖為本發明第一實施例之薄板型導電膜結構。 -4- 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 1226858 A7 B7 V. Description of the Invention (3) At least one metal film layer and at least one conductive non-metal film layer are stacked on top of each other to achieve good conductivity, and by optical interference The design of the principle enables the film to have high transmittance and other effects, and can be widely used in light emitting diode (LED), electroluminescence (EL) light sources, and flat light sources, such as: daily white flat light sources, indoor Color flat light source for external advertising, flat light source for warning, flat light source for instrument and backlight panel, etc. Summary of the Invention: The main object of the present invention is to provide a thin-plate type conductive film structure with low resistivity and extremely high transmittance, and a method for manufacturing the same. The invention is mainly a transparent conductive multilayer film designed by using the principle of film optical interference, which is formed on a substrate to form at least one metal film layer and at least one conductive non-metal film layer. The metal film layer is a metal, Formed by a metal mixture or its alloy, such as chromium, titanium, titanium, platinum, silver and gold, or any mixture thereof; the conductive non-metallic film layer is selected from conductive oxides, nitrides, carbides, boron Any one or a combination of compounds, semiconductors and mixtures thereof, organic substances and high molecular polymers. At the same time, an interface layer may be added between the metal film layer and the non-metal film layer, and the interface layer is made of metal, semi-metal, conductive non-metal or a mixture thereof. Because it has at least one metal film layer, the resistance can be reduced to obtain good conductivity, and the optical interference thin film film stack is designed to form film layers of different thicknesses to have high optical transmission and other effects. BRIEF DESCRIPTION OF THE DRAWINGS: The first figure is a conventional thin-plate conductive film structure. The second figure is a thin-plate type conductive film structure according to the first embodiment of the present invention. -4- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

1226858 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(4 ) 第三圖 為本發明第二實施例之薄板型導電膜結構。 第四圖 為本發明第三實施例之薄板型導電膜結構。 第五圖為本發明第四實施例之薄板型導電膜結構。 第六圖為二膜層導電膜之穿透率與波長關係圖。 第七圖為三膜層導電膜之穿透率與波長關係圖。 第八圖為五膜層導電膜之穿透率與波長關係圖。 第九圖為九膜層導電膜之穿透率與波長關係圖。 第十圖為另一九膜層導電膜之穿透率與波長關係圖。 第一最佳實施例之詳細說明: 本發明主要係利用金屬材質具有非常低的電阻率,以 解決前述之在電極兩端產生壓降差異之問題,但是由於金 屬對大部份波長而言是不透明的,意即金屬對大部份光的 穿透率是很低的,如此就無法達到成為顯示器之目的。本 發明乃針對此一問題提出一個有效之方法,即本發明運用 光學干涉原理設計出包含金屬之多層膜,使其兼具低電阻 率和高穿透率等功效。首先,請參閱第二圖,其中膜層1為 基板,材質可為玻璃或透明塑膠類材料;膜層2 為導電非 金屬膜層,其材質多為具導電之氧化物,如ITO,或氮化 物,如TiN、TaN,或具導電之碳化物,如TaC,或硼化物, 如TiB,或具導電之半導體及其混合物,如Si、Ge、GaAs 或有機物(organic)及高分子聚合物(polymer)等;而膜層4 則為金屬的材質,該金屬膜層係金屬、金屬混合物或其合 金所形成,如鉻、铭、鈦、白金、銀及金等金屬或其任一 5- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁)1226858 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (4) The third figure is a thin-plate type conductive film structure according to the second embodiment of the present invention. The fourth figure is a thin plate type conductive film structure according to a third embodiment of the present invention. The fifth figure is a thin-plate type conductive film structure according to a fourth embodiment of the present invention. The sixth figure is the relationship between the transmittance and wavelength of the two-layer conductive film. The seventh graph is a graph of the transmittance and wavelength of the three-layer conductive film. The eighth figure is a graph of the transmittance and wavelength of the five-layer conductive film. The ninth figure is a graph of the relationship between the transmittance and wavelength of the nine-layer conductive film. The tenth figure is a relationship diagram of the transmittance and wavelength of another nine-layer conductive film. Detailed description of the first preferred embodiment: The present invention mainly uses the metal material to have a very low resistivity to solve the aforementioned problem of the difference in voltage drop across the electrodes. Opaque, which means that the metal has a very low transmittance to most light, so it cannot achieve the purpose of being a display. The present invention proposes an effective method to solve this problem, that is, the present invention uses the principle of optical interference to design a multilayer film containing metal, so that it has both low resistivity and high transmittance. First, please refer to the second picture, in which the film layer 1 is a substrate and the material can be glass or transparent plastic materials; the film layer 2 is a conductive non-metal film layer, and the material is mostly a conductive oxide such as ITO or nitrogen Compounds such as TiN, TaN, or conductive carbides, such as TaC, or borides, such as TiB, or conductive semiconductors and mixtures thereof, such as Si, Ge, GaAs or organics and polymers ( polymer), etc .; and the film layer 4 is made of metal. The metal film layer is formed of metal, metal mixture, or alloy thereof, such as chromium, metal, titanium, platinum, silver, and gold or any of its Paper size applies Chinese National Standard (CNS) A4 (210X 297 mm) (Please read the precautions on the back before filling this page)

經濟部中央標準局員工消費合作社印製 1226858 A7 B7___ 五、發明説明(5 ) ^ ^ 混合物。而該膜層2、4之位置得以立換者。 · 第二最佳實施例之詳細說明: 請再參閱第三圖,該膜層1為基板,材質可為玻璃或透明 塑膠類材料;膜層2為導電非金屬膜層,其材質多為具導 電之氧化物,如ITO,或氮化物,如TiN、TaN,或具導電 之碳化物’如TaC,或硼化物,如TiB,或具導電之半導體 及其混合物,如Si、Ge、GaAs或有機物(orSanic)及高分子 聚合物(polymer)等;該膜層4則為金屬的材質,該金屬膜 層係金屬、金屬混合物或其合金所形成,如鉻、鋁、鈦、 白金、銀及金等金屬或其任一混合物;而於膜層2、4之間 鍍上一膜層3為介面層,該膜層3可使用金屬、半金屬、 導電非金屬或其混合物或其合金材質,如Cr,Al,或半導體 及其混合物如Si,Ge,GaAs等為材料。而該膜層2、4之位置 得以互換者。 第三最佳實施例之詳細說明: 請再參閱第四圖所示,其係由膜層2及膜層4構成一基本 膜層單元’然後依此該基本膜層單元鑛成數層至數十層膜 堆如2 - 4膜堆組,以組成設計之導電多層膜,其中各層厚 度可隨實際需要而改變,且藉由該重覆之金屬層可達到降 低整體電阻率之功效。又該膜層2或膜層3亦可以是上述材 質之混合層且該膜層2與膜層3之重疊順序可交換。又本發 明之各膜層形成方法可以用濺鍍法(sputtering),蒸鍍法 (evaporation),化學氣相沈積法(CVD)或物理氣相沈積法 (PVD)鍍製成。其中,該化學氣相沈積法,可為熱化學氣 相沈積法、電漿輔助化學氣相沈積法及金屬有機化學或離 -6· 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇χ297公釐) " (請先閱讀背面之注意事項再填寫本頁}Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 1226858 A7 B7___ V. Description of Invention (5) ^ ^ Mixture. The positions of the film layers 2 and 4 can be changed. · Detailed description of the second preferred embodiment: Please refer to the third figure again. The film layer 1 is a substrate, and the material can be glass or transparent plastic. The film layer 2 is a conductive non-metallic film layer. Conductive oxides, such as ITO, or nitrides, such as TiN, TaN, or conductive carbides, such as TaC, or borides, such as TiB, or conductive semiconductors and mixtures thereof, such as Si, Ge, GaAs, or Organic material (orSanic), polymer (polymer), etc .; the film layer 4 is made of metal, and the metal film layer is formed of metal, metal mixture or alloy thereof, such as chromium, aluminum, titanium, platinum, silver and Metals such as gold or any mixture thereof; and a film layer 3 is plated between the film layers 2 and 4 as an interface layer, and the film layer 3 can be made of metal, semi-metal, conductive non-metal or its mixture or alloy material, Materials such as Cr, Al, or semiconductors and their mixtures such as Si, Ge, GaAs, etc. are used. The positions of the film layers 2 and 4 can be interchanged. Detailed description of the third preferred embodiment: Please refer to FIG. 4 again, which is composed of a film layer 2 and a film layer 4 to form a basic film layer unit. Layer film stacks, such as 2-4 film stacks, are designed to form conductive multilayer films, where the thickness of each layer can be changed according to actual needs, and the effect of reducing the overall resistivity can be achieved by the repeated metal layer. The film layer 2 or the film layer 3 may also be a mixed layer of the above materials, and the overlapping order of the film layer 2 and the film layer 3 may be exchanged. The method for forming each film layer of the present invention can be formed by sputtering, evaporation, chemical vapor deposition (CVD), or physical vapor deposition (PVD). Among them, the chemical vapor deposition method may be a thermal chemical vapor deposition method, a plasma-assisted chemical vapor deposition method, and a metal organic chemistry or ion-6. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇 χ297 mm) " (Please read the notes on the back before filling in this page}

1226858 A7 B7五、發明説明(6) 子輔助蒸鍍氣相沈積法。又,該物理氣相沈積法,’可為熱 電阻蒸鍍法、熱電阻電漿或離子輔助蒸鍍法、電子鎗蒸鍍 法、電子鎗電漿或離子輔助蒸鍍法、濺射鍍膜法、濺射電 漿或離子輔助蒸鍍法、電弧電漿鍍膜法。為使製程簡化而 適合大量生產,本實施例之最佳層數為2-20層。又,該膜 層2及膜層4間鍍上一膜層3 為介面層以構成一基本膜層單 元。 第四最佳實施例之詳細說明: 為使第二圖之導電多層膜間的介面得以保護,並使對 較高頻之電訊號反應快速及更進一步降低電阻率,我們在 該導電多層膜之至少一側或一端上方蒸鑛上金屬、半金 屬、導電非金屬或或其混合物或其合金的膜層5 ,如第五 圖所示。比較第二圖與第五圖可以發現當對膜層2 施加一 壓降時,第二圖之電流將沿著膜層2之非金屬膜兩端向中 央流動,因受導電非金屬膜之電阻影響,當電流由導電非 金屬膜兩端流向中央時,其電流則有逐漸減小之缺失。然 經濟部中央標準局員工消費合作社印製 B 金、 半 A 、 五 屬第 金如 上, 鍍5 增層 方膜 上的 端物 一 合 或混 側其 一 或 少金 至 合 之、 膜屬 層金 多非 導導 該、 在屬 XL 由合層 藉其膜 係或屬 徑物金 路合非 流混電 電其導 其或向 , 屬流 時金流 示非電 所電使 圖導再 導 層體 阻的 央 中 ’ 膜 央由 中經 向以 屬☆ 1 兩電 之5 低層 率膜 屬 金 半 其 整 高 提 有 具 更 圖 二 第 比 圖 五 第 故 層 膜 層 多 他 其 到 通 或 側 一 少 至 之 膜 層 多 外 另 ο 效 功 之 率 一f色 物 化 氮 物 化 氧 之 電 導 具 用 可 亦 物 合 混 其 及 體 導 層半 膜 、 之物 鍍化 物 化 加 方 硼 合 組 所 物 合 聚 子 分 高 及 物 機 有 (請先閱讀背面之注意事項再填寫本頁)1226858 A7 B7 V. Description of the invention (6) Sub-assisted vapor deposition. The physical vapor deposition method may be a thermal resistance vapor deposition method, a thermal resistance plasma or ion assisted vapor deposition method, an electron gun vapor deposition method, an electron gun plasma or ion assisted vapor deposition method, a sputtering coating method, or a sputtering method. Radio plasma or ion-assisted vapor deposition, arc plasma coating. In order to simplify the process and be suitable for mass production, the optimal number of layers in this embodiment is 2-20 layers. In addition, a film layer 3 is plated between the film layer 2 and the film layer 4 as an interface layer to constitute a basic film layer unit. Detailed description of the fourth preferred embodiment: In order to protect the interface between the conductive multilayer films of the second figure, and to respond quickly to higher frequency electrical signals and further reduce the resistivity, we have A film layer 5 of metal, semi-metal, conductive non-metal, or a mixture or alloy thereof is distilled on at least one side or above one end, as shown in the fifth figure. Comparing the second graph with the fifth graph, it can be found that when a voltage drop is applied to the film layer 2, the current in the second graph will flow to the center along the two ends of the non-metal film of the film layer 2, because of the resistance of the conductive non-metal film Influence, when the current flows from both ends of the conductive non-metallic film to the center, the current will gradually decrease. However, the staff of the Central Standards Bureau of the Ministry of Economic Affairs printed the gold, semi-A, and fifth genus of the cooperative as above, and plated 5 end layers on the square film. The metal is non-conductive, and the metal XL is connected by its membrane system or the metal alloy of the road. The non-current mixed electricity is conducted or directed. When the metal is flowing, the gold current shows the non-electricity of the electricity to make the conductive layer. The central resistance of the body resistance's membrane is from the middle to the meridian ☆ 1 The two electric powers 5 The low-layer rate membrane is made of gold and its height is increased. The second layer is more than the second layer. On the side, there are as few layers as possible, and on the other side. The efficiency of the work is a matter of color. Nitrogen, oxygen, and oxygen can be mixed with the conductive layer of the conductive layer. Wuhezizi high and machine (please read the precautions on the back before filling this page)

本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 1226858 A7 B7 五、發明說明() 圖號說明 S··基材;1·.基板;2·.導電非金屬膜層;3.·介面層;4..金 屬膜層;5··膜層;1〇..透明導電之ITO; 12、14··膜層 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) 1226858 A7 B7 V. Description of the invention () Drawing number description S ·· substrate; 1. substrate; 2. conductive non-metallic film layer; 3 Interface layer; 4. Metal film layer; 5. Film layer; 10 .. Transparent conductive ITO; 12, 14 ... Film layer (Please read the precautions on the back before filling this page) Wisdom of the Ministry of Economic Affairs The paper size printed by the Property Cooperative's Consumer Cooperative is applicable to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

I辆85|I vehicles 85 | Α8 Β8 C8 D8 (1999年八月修正) 六、申請專利範圍 1. 一種薄板型導電膜結構,包括: 一非導電透明玻璃或塑料基板; 一位於該基板的一表面上的導電膜,該導電膜爲複數 導電層所構成,其中該等導電層可以是金屬性或非金屬性 物質,但其中位於該基板的該表面的第一層導電層爲該金 屬性物質; 其中該導電膜所包含的各導電層的厚度、順序及可見 I光平均光學折射率被安排成在光學干涉原理下,使得該電 導電膜具有60%-95%的可見光平均穿透率。 2. 如申請專利範圍第1項的薄板型導電膜結構,其中 該導電膜的複數導電層爲2η層,η爲大於等於1及小於10的 整數,其中奇數層導電層爲相同或不相同的金屬性物質, 及偶數層導電層爲相同或不相同的非金屬性物質。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 3. 如申請專利範圍第2項中的薄板型導電膜結構,其 中該金屬性物質爲單一金屬或金屬合金,及該非金屬性物 質係選自具導電性之氧化物、氮化物、碳化物、硼化物、 半導體、有機物或高分子聚合物、其中之任何一種或多種 的混合物所組成的族群。 4·如申請專利範圍第3項的薄板型導電膜結構,其中 該金屬性物質爲金、銀、銅、鉻、鋁、鈦或其等的合金。 -Τ---------- 1Π . 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) 1226858 ABCD (1999年八月修正) 經濟部中央標隼局員工消費合作社印製 六、申請專利範圍 5. 如申請專利範圍第4項的薄板型導電膜結構,其中 該金屬性物質爲銀或銀與其它金屬的合金。 6. 如申請專利範圍第3項的薄板型導電膜結構,其中 該非金屬性物質爲摻雜有錫或鋅的銦氧化物、碳化矽 (SiC)、摻雜的類鑽、Sn02、ln203、ZnO、CdO、或 Cd0-Sn02。 7. 如申請專利範圍第6項的薄板型導電膜結構,其中 該非金屬性物質爲摻雜有錫的銦氧化物(ΙΤΟ)或碳化矽 (SiC) 〇 8. 如申請專利範圍第7項的薄板型導電膜結構,其中 該金屬性物質爲銀或銀與其它金屬的合金。 9·如申請專利範圍第1項的薄板型導電膜結構,其中 該導電膜所包含的導電層的每一層的厚度介於1 nm至200 nm之間。 10.如申請專利範圍第1項的薄板型導電膜結構,進 一步包括位於該等導電層間的一層或數層導電介面層,以 增加層與層之間結合性,並且該導電介面層的厚度及可見 光平均光學折射率不會使該透明導電膜平板的可見光平均 穿透率產生實質上的降低。 -II- 本紙張尺度適用中國國家榇準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 1226858 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 11·如申請專利範圍第10項的薄板型導電膜結構,其 中該導電介面層爲金屬、金屬合金或摻雜的半導體。 12·如申請專利範圍第1項的薄板型導電膜結構,進 一步包括位於該基板與該導電膜間的一層或數層導電或非 導電介面層,以增加兩者間的結合性,並且該導電或非導 電介面層的厚度及可見光平均光學折射率不會使該透明導 電膜的可見光平均穿透率產生實質上的降低,其中當該介 面層是單層時,則該介面層可以是導體也可以是非導體; 當該介面層是多層時,則較靠近該導電膜的是導電介面 層,較靠近該基板的是非導電介面層。 13·如申請專利範圍第12項的薄板型導電膜結構,其 中該導電介面層爲金屬、金屬合金或摻雜的半導體。 14.如申請專利範圍第12項的薄板型導電膜結構,其 中該非導電介面層係選自不導電之氧化物、氮化物、氟化 物、碳化物、有機物、高分子聚合物,及其中之任何一種 或數種之混合物所組成的族群。 --------^I-^IIΦ-----訂------$11- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X^2:7公釐)Α8 Β8 C8 D8 (Amended in August 1999) 6. Scope of patent application 1. A thin-plate conductive film structure includes: a non-conductive transparent glass or plastic substrate; a conductive film on a surface of the substrate, the conductive The film is composed of a plurality of conductive layers, wherein the conductive layers may be metallic or non-metallic materials, but the first conductive layer on the surface of the substrate is the metallic material; wherein the conductive film contains The thickness and order of each conductive layer and the average optical refractive index of visible light are arranged under the principle of optical interference, so that the electrically conductive film has an average visible light transmittance of 60% -95%. 2. For example, the thin-plate type conductive film structure of the scope of patent application, wherein the plurality of conductive layers of the conductive film are 2η layers, η is an integer greater than or equal to 1 and less than 10, and the odd number of conductive layers are the same or different The metallic substance and the even-numbered conductive layers are the same or different non-metallic substances. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) 3. If the thin-plate conductive film structure in item 2 of the patent application scope, where the metallic substance is a single metal or a metal The alloy and the non-metallic substance are selected from the group consisting of conductive oxides, nitrides, carbides, borides, semiconductors, organics, or high molecular polymers, and mixtures of any one or more thereof. 4. The thin-plate type conductive film structure according to item 3 of the application, wherein the metallic substance is gold, silver, copper, chromium, aluminum, titanium, or an alloy thereof. -Τ ---------- 1Π. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 1226858 ABCD (Amended in August 1999) Printed by the Consumers' Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs 6. The scope of patent application 5. The thin-plate type conductive film structure according to item 4 of the scope of patent application, wherein the metallic substance is silver or an alloy of silver and other metals. 6. The thin-plate conductive film structure according to item 3 of the patent application scope, wherein the non-metallic substance is indium oxide doped with tin or zinc, silicon carbide (SiC), doped diamond-like, Sn02, ln203, ZnO , CdO, or Cd0-Sn02. 7. For example, the thin-plate type conductive film structure of the scope of patent application, wherein the non-metallic substance is indium oxide (ITO) or silicon carbide (SiC) doped with tin 〇8. The thin-plate type conductive film structure, wherein the metallic substance is silver or an alloy of silver and other metals. 9. The thin-plate type conductive film structure according to item 1 of the application, wherein the thickness of each of the conductive layers included in the conductive film is between 1 nm and 200 nm. 10. The thin-plate conductive film structure according to item 1 of the patent application scope, further comprising one or more conductive interface layers between the conductive layers to increase the bonding between layers, and the thickness of the conductive interface layer and The average visible optical refractive index does not substantially reduce the average visible light transmittance of the transparent conductive film plate. -II- This paper size is applicable to China National Standard (CNS) A4 (210X 297mm) (Please read the precautions on the back before filling this page) Order 1226858 A8 B8 C8 D8 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs System 6. Application Patent Scope 11. The thin-plate type conductive film structure according to item 10 of the application patent scope, wherein the conductive interface layer is a metal, a metal alloy, or a doped semiconductor. 12. The thin-plate conductive film structure according to item 1 of the patent application scope, further comprising one or more conductive or non-conductive interface layers between the substrate and the conductive film to increase the bonding between the two, and the conductive The thickness of the non-conductive interface layer and the average optical refractive index of visible light do not substantially reduce the average visible light transmittance of the transparent conductive film. When the interface layer is a single layer, the interface layer may be a conductor or It may be non-conductive; when the interface layer is multilayer, the conductive interface layer is closer to the conductive film, and the non-conductive interface layer is closer to the substrate. 13. The thin-plate type conductive film structure according to item 12 of the application, wherein the conductive interface layer is a metal, a metal alloy, or a doped semiconductor. 14. The thin-plate conductive film structure according to item 12 of the application, wherein the non-conductive interface layer is selected from non-conductive oxides, nitrides, fluorides, carbides, organics, high-molecular polymers, and any of them. A group of one or more mixtures. -------- ^ I- ^ IIΦ ----- Order ------ $ 11- (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 size (210 X ^ 2: 7 mm)
TW88101662A 1999-02-03 1999-02-03 Thin sheet conductive film and production of the same TWI226858B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014067233A1 (en) * 2012-10-30 2014-05-08 中国科学院长春光学精密机械与物理研究所 Preparation method for high-conductivity organic transparent conductive film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014067233A1 (en) * 2012-10-30 2014-05-08 中国科学院长春光学精密机械与物理研究所 Preparation method for high-conductivity organic transparent conductive film
CN103794728A (en) * 2012-10-30 2014-05-14 中国科学院长春光学精密机械与物理研究所 Preparation method of high-conductivity organic transparent conductive film

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