TWI225714B - Electrode structure for a light-emitting device - Google Patents
Electrode structure for a light-emitting device Download PDFInfo
- Publication number
- TWI225714B TWI225714B TW92134469A TW92134469A TWI225714B TW I225714 B TWI225714 B TW I225714B TW 92134469 A TW92134469 A TW 92134469A TW 92134469 A TW92134469 A TW 92134469A TW I225714 B TWI225714 B TW I225714B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- electrode structure
- contact
- finger
- item
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
Description
1225714 曰 案號 921344RQ 五、發明說明(1) 一、 【發明所屬之技術領域】 本發:係有關於光電元件的電 -種以六邊形為架構所形成之光電元件的電:::有關於 二、 【先前技術】 由於氮化鎵(GaN)具有寬的能帶間隙(在a 3· 4eV)且其發光範圍在藍光波,:,溫下Eg-- 合作為短波長發光元件的材料,丄:::化鎵非常適 银、 材4之一。經過不斷的研究及發展, 基之術^可,虱化鎵穩定的成長於藍寶石(sapphire) 二制、,並且若再經由適當的磊晶以及電極的安排,即 可衣造出短波長的發光元件。 如第一圖所示’係一習知發光元件之電極的概略結構 俯視圖。第一電極11 〇在外加電壓時,電流會經由與其相 連接的接觸墊流入此發光元件内,並藉由順向穿越其内部 P/N接面時所引發少數載子的重新組合而產生能量發光, 之後電流會經由不同的路徑(例如··電流路徑11 2、11 4以 及116等)匯流至第二電極120,並透過與第二電極120相連 接的接觸墊流出此發光元件。然而,電流從第一電極11 0 匯流至第二電極1 2 〇的路徑並非都是等距離的電流路徑, 也因此造成非均勻電流分布的現象,並導致此發光元件發 光亮度不均勻的情況產生。例如:邊緣電流路從11 2及11 6 的電流密度因路徑距離較長的關係,所以會比中心電流路1225714 Case No. 921344RQ V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention: Electricity related to the photovoltaic element-a kind of electricity of the photovoltaic element formed with a hexagonal structure :: Yes About II. [Previous technology] Because gallium nitride (GaN) has a wide band gap (at a 3 · 4eV) and its light emission range is in the blue light wave, Eg at temperature-cooperation as a material for short-wavelength light-emitting elements , 丄 ::: Gallium carbide is very suitable for silver and metals. After continuous research and development, the basic technology can be stabilized, and the gallium lice can grow sapphire sapphire (sapphire) system steadily, and if appropriate epitaxial and electrode arrangements, you can make short-wavelength light emission element. As shown in the first figure, 'is a schematic plan view of an electrode of a conventional light-emitting element. The first electrode 11 〇 When a voltage is applied, a current flows into the light-emitting element through a contact pad connected to the first electrode 11, and energy is generated by recombination of minority carriers caused by passing through the internal P / N junction in a forward direction. After the light is emitted, the current will converge to the second electrode 120 through different paths (for example, the current paths 11 2, 11 and 116, etc.), and flow out of the light emitting element through the contact pad connected to the second electrode 120. However, the paths from which the current flows from the first electrode 110 to the second electrode 12 are not all equidistant current paths, which also causes a phenomenon of non-uniform current distribution and causes uneven brightness of the light-emitting element. . For example: the current density of the edge current path from 11 2 and 11 6 is longer than the center current path due to the longer path distance.
第6頁 1225714 --案號92134469__年月日 修正___ 五、發明說明(2) 徑1 1 4的電流密度低,因此發光元件在其邊緣部分的發光 免度就不及在其中心部分的發光亮度。此外,電流密度分 布不均,亦是造成發光元件可靠度不佳的主要原因之一。 為了提升發光元件的發光亮度,氮化鎵(GaN)發光元 件已逐漸轉向高功率及大面積元件發展,如第二圖所示, 係另一種在高功率半導體元件常見之指插狀電極的概略結 構俯視圖。第一電極1 5 〇垂直連接相互平行的延伸電極 1 5 〇 - 1與1 5 0 - 2形成一所謂的指狀電極結構。而第二電極 160亦垂直連接相互平行的延伸電極16〇 — 1、ι⑽— a與 =成另一指狀電極結構。由於兩指狀電極形成 =且平行的電極結構,其各延伸電極與相鄰延伸= =距均為㈣’因此’電流從延伸電極流到相鄰延伸電 部為等距離的電流路徑’藉此平均發光元件内各 伸ΐ:?:密度及發光強度。然而上述的指插狀結構在延 第會隨著與電極的距離增加而變纟,例如: B點到弟-電極! 50的阻抗大於A點到第 ^ 這意味著流到B點的電流強度會比流到八點的金=^。 因此在延伸電極B點附近的電流密度也合、々丨L、又小, ^ T^· Jtt Γ-! 卩比A點附近的雷'、、六 ,山度低,因而造成B點附近的發光強度也就電肌 近的發光強度弱。 4對的比Δ點附 签於以上所述之發光元件電極結構的 生產時的限制,實有需要持續發展 、:f貫传 叹艮結構以克服4Page 6 1225714-Case No. 92134469 __Year Month Day Amendment ___ V. Description of the invention (2) The current density of the diameter 1 1 4 is low, so the luminous immunity of the light emitting element at its edge portion is not as good as that of its center portion. Luminous brightness. In addition, uneven current density distribution is also one of the main reasons for the poor reliability of light emitting devices. In order to improve the luminous brightness of light-emitting elements, gallium nitride (GaN) light-emitting elements have gradually shifted to the development of high-power and large-area elements. As shown in the second figure, it is the outline of another finger-type electrode common in high-power semiconductor elements. Top view of structure. The first electrode 150 is perpendicularly connected to the extending electrodes 150 and 1 which are parallel to each other to form a so-called finger electrode structure. The second electrode 160 is also vertically connected to the extending electrodes 16-1, ι-a and = which are parallel to each other to form another finger electrode structure. Because the two-finger electrode is formed as a parallel electrode structure, each extension electrode and the adjacent extension = = the distance is ㈣ ', so' the current flow from the extension electrode to the adjacent extension electric part is an equal distance current path ' Each extension in the average light-emitting element:?: Density and luminous intensity. However, the above-mentioned finger-like structure will change as the distance from the electrode increases, for example: point B to brother-electrode! 50 impedance is greater than point A to ^ This means the intensity of the current flowing to point B It will be better than gold flowing to eight o'clock = ^. Therefore, the current density near the extension electrode B is also small, 々 丨 L, and small. ^ T ^ · Jtt Γ-! The luminous intensity is also weak near the electric muscle. The 4-pair ratio Δ point is attached to the above-mentioned limitation of the light-emitting element electrode structure during production, and there is a need for continuous development.
12257141225714
前技藝中的各項缺失。所以,如何等距兩電極間的電流路 徑、如何平均電極與延伸電極間的距離阻抗以及如何的 局才能^用標準製程以滿足高功率發光元件的不同需求, 二2技朴項域必然會遭遇的問題,也是本發明所要解決的 修正 三、【發明内容】 於上述之發明背景中,知藝中之 極結構會有電汽分希 ^ 的電 明利用六邊开;;::及距離阻抗不同等問題。本發 邊形為架構:平面之幾何特性’提供-種以六 技藝中的諸:缺點。兀件的電極結構,藉此改良習知 本發明的目的之_為,茲 _ > 成的電極結構,χ # a 邊形為架構所形 距。 構卩使苐一電極至第〔電極間的t流路徑等 Α μ ^毛明之另一目的為,藉由一種以六邊形Α π & 念的電極結構’其每一相鄰 架構所形 電極與延伸電極間的距離阻抗。 门之概念,平均 柜據以上所述之目的,本發 — 電極結構’包括:一第一電極,…電極:光電元件的Missing items in the previous art. Therefore, how to equidistant the current path between the two electrodes, how to average the distance impedance between the electrode and the extension electrode, and how to use the standard process to meet the different needs of high-power light-emitting elements, the technical field of the second and second technology will inevitably encounter The problem is also the amendment to be solved by the present invention. [Summary of the Invention] In the above-mentioned background of the invention, the pole structure in the art will have electric power of ^^^, which uses six sides to open ;; :: and distance impedance Different issues. The shape of the frame is the geometric characteristics of the plane. It provides a variety of techniques: disadvantages. The electrode structure of the element is used to improve the conventional electrode structure. The purpose of the present invention is to make the electrode structure, and the χ # a edge is the distance of the structure. Another purpose of the structure is to make the flow path from the first electrode to the second electrode Α μ ^ Mao Ming by using an electrode structure with hexagonal A π & Impedance of the distance between the electrode and the extension electrode. The concept of the door, the average cabinet According to the purpose described above, the present-electrode structure 'includes: a first electrode, ... electrode: the
觸部八,一才曰狀邓为、一第一連接部分與至少 刀母~第一指狀部分具有一第一端與—The contact part eight is a Deng Wei, a first connecting part and at least the knife ~ the first finger part has a first end and-
麵 第8頁 1225714 曰 第一連接部分 一端與第一連 包括複數個彼 至少一第二接 一第四端,其 狀部分之間, 觸部分插入於 之第二電極定 之間,每一六 ,每兩第二指 之四個共邊, 邊延伸至每一六邊形單元之幾何中心1225714 on page 8 means that one end of the first connection portion and the first connection include a plurality of at least one second to one fourth end, the shape portion, the contact portion is inserted between the second electrode set, each six, Every two second fingers have four co-edges, with the edges extending to the geometric center of each hexagonal cell
i號 921344BQ 五、發明說明(4) 中此等第一端連接至 interpose)於任一第 二電極,此第二電極 、一弟一連接部分與 部分具有一第三端與 於相鄰之任兩第一指 二連接部分,第二接 部分之間。其中上述 上述之複數個第二端 其他六邊形單元緊鄰 =成每一六邊形單元 遠形s - 早疋之其他兩個 修― 第一接觸部分插入( 部分之間;以及一第 此平行的第二指狀部分 觸部分,每一第二指狀 中任一第二指狀部分位 且此等第三端連接至第 任一第三端與第二連接 義複數個六邊形單元於 邊形單元以四個共邊與 狀部分與第二連接部分 且每一第二端由每一六 L實施方式】 細描ΐΐΓ月白士勺—些實施例會詳細描述如下。然而,除了詳 本發明的範ΓΓ月還可以f泛地在其他的實施例施行,且 ’軌圍不党限定,其以之後的專利範圍為準。 示内分ί =更清楚的描述及更容易理解本發曰月,圖 相關尺度之比:ΐ Γ照其相對尺寸繪圖1些尺寸與豆他 繪出,,二已經被誇張;不相關之細節部分也未二全 ^求圖示的簡潔。 也禾兀玉i. No. 921344BQ 5. In the description of the invention (4), these first ends are connected to any of the second electrodes, and the second electrode, the first connection part and the part has a third end connected to any adjacent electrode. Two first fingers are connected between two connecting parts, and the second connecting part is between the two. Wherein the above-mentioned plural other hexagonal elements at the second end are close to each other = to form a hexagon of each hexagonal element s-the other two repairs of the early ―-the first contact part is inserted (between the parts; and the first parallel Touch the second finger part of each, any second finger part of each second finger position and these third ends are connected to the first third end and the second connection meaning a plurality of hexagonal units in The polygonal unit has four common edges and shaped portions and a second connecting portion, and each second end is composed of every six L.] A detailed description of ΐΐΓ 月白 士 勺 —Some embodiments will be described in detail below. However, in addition to the detailed text The scope of the invention can also be implemented in other embodiments in general, and the rails are not limited by the party, which is subject to the scope of the subsequent patents. Indications = Clearer description and easier to understand Month, the ratio of the scales of the picture: ΐ Γ draws some dimensions according to its relative size and draws them, and the two have been exaggerated; the irrelevant details are not complete. Seek the simplicity of the illustration.
1225714 92134469 五、發明說明(5) 月 Θ 修正 -電ί發供了 一種光電元件的電極結構,包括··-第 分、一 Μ —、一電極包括複數個彼此平行的第一指狀部 弟 連接部分與至少一第一接總都八,益一势 Lb 第::與一第二端,其中-:連:』 -端與第接;部分插入(interP〇se)於任-第 包括複;個;::二;:;”;=第二電極,此第二電極 至少一第二接觸部分,狀二、-第二連接部分與 -第四端,其中任一第一沪f /曰“分具有-第三端與 狀部分之間,且此等ί = 部分位於相鄰之任兩第一指 觸部分插入於任—第三;::ί接至第二連接部分,第二接 之第二雷 W —而人弟一連接部分之間。其中上述 之間,每一:邊:^個/、邊形單元於上述之複數個第二端 鄰,每兩第===第四個六邊形單元緊 元之四個共邊,且每—第:2f 刀組成每-六邊形單 個邊延伸至每—六邊形d:;:邊形單元之其他兩 構示係本發明之一較佳實施例的電極结 ,及至少-個第- ㈣之間。在本實H曰狀部分⑽底端與第-連接部分 例中,兩個矩形的第-接觸部分係 第10頁 12257141225714 92134469 V. Description of the invention (5) Month Θ Correction-Electricity provided an electrode structure of a photovoltaic element, including ...- th-point, 1M-, an electrode including a plurality of first fingers in parallel with each other The connection part and the at least one first connection are always eight, Yiyi potential Lb. The :: and a second end, where-: connected: "-end and the connection; part insertion (interPosion) in any-the first includes the complex ;;;: 二;:; "; = Second electrode, this second electrode has at least one second contact portion, like second, -second connection portion and -fourth end, any one of the first f / "分 有-between the third end and the shaped part, and these ί = part is located between any two first finger touch parts inserted in any-the third; ::: connected to the second connection part, the second connection The second thunder W — while the brother one is connected between the parts. Among the above, each: edge: ^ /, the edge unit is adjacent to the plurality of second end neighbors above, and every two fourth === the fourth hexagon unit has four coedges, and each —Section: 2f The knife constitutes a single side of each-hexagon extending to each—hexagon d:;: The other two configurations of the hexagonal unit are electrode junctions of a preferred embodiment of the present invention, and at least one -In between. In the example of the bottom part of the H-shaped part and the-connecting part, the two-contact parts of the rectangle are page 10 1225714
分別間隔地插入第一指狀部分3丨〇底端,並 墊(contact pad)的部分,在此須強調的是^成金屬接觸 的第一接觸部分並非僅侷限於矩形之幾何本貫施例中 其他幾何形狀取代。 "狀,其亦可以 第二電極包括複數個彼此平行的第二 一個連接此等第二指狀部分34〇底端的 。卩分340、 及至少-個第二接觸部分36〇。其中, J接部分350以 34〇的頂端平行穿插於相鄰之任個第一指;^狀部为 ,而第二接觸部分3 6 0可插入於任一第一 ^分310之間 與第二連拯邻八πη々叫+丄 禾—才日狀部分340底端 -拔總之間。在本實施例中,兩個圓祀的繁 ^二=部分36 0分別位於兩側第二指狀部分34〇的底端並斑 ,:連:妾部分3 5 0連接,以形成金屬接觸墊的部分,同理、 =接觸部分並非僅侷限於圓形之幾何形狀 具他幾何形狀取代。 八力J Μ 380於此箄第一於壯却\ 義複數個六邊形單元37〇、 每一4第私狀。卩/刀31 〇頂端之間,如第三Β圖所示。 ::六邊形單元370、380以四個共邊(例如:兩相鄰且 ^第二指狀部分34G以及連接此兩第二指狀部分34〇 喜λ 7*連接部分350 )與其他六邊形單元370、380緊鄰,且 =1個相鄰^同方向的第二指狀部分34〇也可與第二接觸部 施例一 1六邊1單元370、38 0的四個共邊。在本實 母一 /、邊形單元3 7 0的四個共邊包括〇〜工個第二接 1225714 ___^月 日 條正 五、發明說明(7) ' ' " "" 觸部分36 0 ;而每一六邊形單元38〇的四個共邊包括1個第 二接觸部分360。此外,每一第一指狀部分31 〇的頂端由每 一相對應六邊形單元370、38〇之其他兩個邊延伸至每一相 對應六邊形單元3 7 0、3 8 0之幾何中心。 換句話說,上述之各指狀部分、連接部分以及接觸部 刀=描述,均係以連續之六邊形為架構而排列。請再次參 考第三B圖,以複數個六邊形單元37〇與38〇相連的複數個 頂點分別做為複數個第二指狀部分34〇的底端,並依任兩 相鄰六邊形單tl37◦之共邊以及任兩相鄰六邊形單元38〇之 共邊形成複數個第二指狀部分34〇,唯形成於六邊形單元 jo之共邊的第二指狀部分34〇,其方向與形成於六邊形單 :38 0之共邊的第二指狀部分34〇相反。然後由與此第 =分340底端相連接的六邊形單元37〇與38〇之共邊形成 340—Λ接Λ分3 50。第一指狀部分3 1 〇則位於第二指狀部分 〇底鈿所在之六邊形單元370的相對頂點處。而第一接 第二Λ觸部分36G則可選擇於六邊形單元m 勺頂點處t成。此外,帛_指 形單·之間所形成大小相同 相:、邊 點處形成,唯苴方6你;鱼 咬❿早凡之對角頂 310相反 向與六邊形單元370上的第一指狀部分 最後在複數個六邊形置 q , > %〜早70 7 0與3 8 〇所形忠的士敫屯 上,每兩相鄰且同方向的第?成的-整千' ^弟一才曰狀口p分3 4 0之間均有一與 1225714 案號 92134469 五、發明說明(8) $平行的第一指狀部分310,·換句話說,每兩相鄰的第一 =狀邛分3 1 〇之間也相對的會有一與其平行的第二指狀部 刀340。由於六邊形單元37〇、380每個邊的邊長相等且第 才曰狀部分3 1 0與第二指狀部分3 4 0間的距離近似相等,因 此透過適當的布局(layout)將第一接觸部分33〇及第二接 分3 6 0安插於六邊形單元370、38〇的頂點,可使得兩 二虽間的電流路徑近似等距,更可平均電極與延伸電極間 =阻抗。❿上述所謂之適當的布局係依據電流分散及 等因素的考量,例^ : 一般打線(bonding)的線 :在=流的規格上係小於高功率發光元件所實議 二Γ二1由增加接觸部分與線材的方式將電流分散 卩;::流過大而燒斷;然而,過多的接觸部分則會使 兀彳所發射的光線被阻擋而造成發光元件發光效率 ::低…基於以上兩個因素的考量而適當的取 ,:Ξ:ί ’ ΐ其:接觸部分的個數並不限定須相互對稱 個部分的個數可多於第二接觸部分的 數,也可以少於第二接觸部分的個數。 〔如/综合^丄述之較佳實施例,本發明所強調的是發光元件 _° · \先二極體(Ught Emitting Diode; LED))兩電 點間的距離相等之概: 利用六邊形任-相鄰頂 產…,X “ “二改良電極與延伸電極間因 1225714 案號 92134469 Λ_η 修正 五、發明說明(9) 邊形相互對稱的幾何圖案,使整個晶片平面做最有效的面 積利用,藉以改進發光元件因非對稱性之電極結構所導致 的面積利用問題。換句話說,在發光元件小單位内平均電 流密度與發光強度以及在大尺寸晶片面積利用的考量下, 六邊形的電極結構均能符合上述條件之要求並且也是本發 明的精神所在。 以上所述僅為本發明之較佳實施例而已,並非用以限 定本發明之申請專利範圍;凡其他為脫離本發明所揭示之 精神下所完成之等效改變或修飾,均應包含在下述之申請 專利範圍。Insert the bottom end of the first finger-shaped portion 3 and the contact pad separately at intervals. It should be emphasized here that the first contact portion that makes the metal contact is not limited to the rectangular geometric embodiment. In other geometric shapes. " It may also be that the second electrode includes a plurality of second ones parallel to each other and connected to the bottom end of these second finger portions 34. Cent 340, and at least one second contact portion 36. Among them, the J-connecting portion 350 is interspersed in parallel with any first finger at the top of 34 °; the second contact portion is, and the second contact portion 3 60 can be inserted between any of the first ^ 310 and the first Er Lian Zheng neighbors eight πη howl + Xunhe-between the bottom end of the sun-like portion 340 and the total. In this embodiment, the two circles of the circle are respectively located at the bottom of the second finger portion 34 on both sides and are spotted, and the ::: 妾 section 3 50 are connected to form a metal contact pad. In the same way, the contact part is not limited to the geometric shape of a circle but replaced by another geometric shape. Eight force J Μ 380 is here first Yu Zhuang but a number of hexagonal units 37〇, 4th each.卩 / 刀 31 〇 Between the top, as shown in the third B picture. :: Hexagonal units 370, 380 with four common edges (for example: two adjacent and second finger portions 34G and connecting the two second finger portions 34. Hi λ 7 * connecting portion 350) with the other six The edge units 370 and 380 are close to each other, and = 1 adjacent second finger portions 340 in the same direction may also be co-edges with the four contacting portions of the first contact example 1 six sides 1 unit 370, 380. In the real mother's first and fourth, the four common sides of the edge unit 3 7 0 include 0 ~ a second connection 1225714 ___ ^ month day article five, the description of the invention (7) '' " " " 36 0; and the four common sides of each hexagonal unit 38 0 include a second contact portion 360. In addition, the top of each first finger-shaped portion 31 ° extends from the other two sides of each corresponding hexagonal unit 370, 380 to the geometry of each corresponding hexagonal unit 3 7 0, 3 8 0 center. In other words, the above-mentioned finger parts, connection parts, and contact parts are all arranged on the basis of continuous hexagons. Please refer to the third figure B again. The plurality of vertices connected to the plurality of hexagonal cells 37 and 38 are used as the bottom ends of the plurality of second finger portions 34 and are used as any two adjacent hexagons. The co-edge of single t37o and the co-edge of any two adjacent hexagonal cells 38o form a plurality of second finger portions 34o, but only the second finger-shaped portion 34 co-edges of the hexagonal unit jo. , Whose direction is opposite to that of the second finger-shaped portion 34 of the co-edge of the hexagonal single: 38 0. Then, the common sides of the hexagonal cells 37 and 38, which are connected to the bottom end of the third point 340, form 340—Λ then Λ point 3 50. The first finger portion 3 1 0 is located at the opposite vertex of the hexagonal unit 370 where the second finger portion 0 is located. The first and second Λ contact portions 36G may be selected at the apex of the hexagonal unit m. In addition, the 指 _ finger-shaped sheets form the same size between each other: the edge points are formed, but the square is 6 you; the fish bite ❿ Early Fan's diagonal top 310 is opposite to the first on the hexagonal unit 370 The finger-shaped part is finally placed on a plurality of hexagons q, >% ~ As early as 70 7 0 and 3 8 0 in the form of a loyalty to the taxi, every two adjacent and in the same direction?的 成-千千 '^ Brother Yicai said that there is one and 1225714 between the points 3 and 0. Case No. 92134469 V. Description of the invention (8) $ parallel first finger portion 310, in other words, each There is also a second finger-shaped knife 340 parallel to the two adjacent first-shaped points 3 10. Since the sides of each side of the hexagonal units 37 and 380 are equal in length and the distance between the first and second finger portions 3 1 0 and the second finger portion 3 40 is approximately equal, the first A contact portion 33 ° and a second connection point 360 are inserted at the vertices of the hexagonal cells 370 and 38 °, so that the current paths between the two pairs are approximately equidistant, and the average distance between the electrode and the extended electrode = impedance. ❿The above-mentioned appropriate layout is based on the consideration of current dispersion and other factors. For example, ^: General bonding wire: It is smaller than the high-power light-emitting element in the specification of = current. Γ 2 1 is increased by contact. Partially disperses the current with the wire method ::: The flow is too large and burns out; however, too much contact will cause the light emitted by the vulture to be blocked and cause the luminous efficiency of the light emitting element :: low ... based on the above two factors It is appropriate to take into consideration: ί: ί 'ΐ Its: The number of contact parts is not limited. The number of parts that must be symmetrical to each other can be more than the number of the second contact part, or less than the number of the second contact part. Number. [As in the preferred embodiment described in / synthesis, the emphasis of the present invention is on the light-emitting element _ ° · \ first diode (Ught Emitting Diode; LED)) The distance between the two electrical points is equal: the use of six sides Responsibility-adjacent top production ..., X "" Because of 1225714 case number 92134469 between the two improved electrodes and extension electrodes Λ_η Amendment V. Description of the invention (9) The geometric patterns of the symmetric polygons make the entire wafer plane the most effective area Use to improve the area utilization problem of the light-emitting element due to the asymmetric electrode structure. In other words, the hexagonal electrode structure can meet the requirements of the above conditions under the consideration of the average current density and luminous intensity in a small unit of the light-emitting element and the utilization of a large-sized wafer area, which is also the spirit of the present invention. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application of the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following The scope of patent application.
第14頁 1225714Page 14 1225714
五、【圖式簡單說明】 構 第一圖係一習知發光元件之電極的概略結構俯視圖 :二圖係另-習知發光元件之指插狀電極的概略結 第三A 圖;以及 圖係本發明之一較佳發光 兀件的電極結構俯视 第 三B圖係第三A圖加上假設之 六邊形的俯視圖 主要部分之代表符號: 11 0、1 5 0 第一電極 11 2、1 1 4、1 1 6電流路徑 120、160 第二電極 150-1 >150-2 第一電極延伸電極 第二電極延伸電極 160-1 、 160-2 、 16〇一3 310 第一指狀部分 320 苐一連接部分 3 3 0 第一接觸部分 340 第二指狀部分 350 第二連接部分 360 第二接觸部分 370、380 六邊形單元 mV. [Schematic explanation] The first diagram is a schematic plan view of the structure of an electrode of a conventional light-emitting element: the second diagram is a third diagram of the conventional structure of a finger-shaped electrode of a conventional light-emitting element; The electrode structure of a preferred light-emitting element according to the present invention is viewed from the third diagram B and the third A diagram plus the hypothetical hexagonal plan view of the main part of the symbol: 11 0, 1 5 0 first electrode 11 2, 1 1 4, 1 1 6 Current path 120, 160 Second electrode 150-1 > 150-2 First electrode extension electrode Second electrode extension electrode 160-1, 160-2, 1600-1310 First finger portion 320 First connection part 3 3 0 First contact part 340 Second finger part 350 Second connection part 360 Second contact part 370, 380 Hexagonal unit m
I 第15頁 1225714 _案號92134469_年月日 修正 圖式簡單說明 A、B A點、B點I Page 15 1225714 _Case No. 92134469_ Year, Month, Day, and Amendment Brief description of drawings A, B A, B
第16頁Page 16
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92134469A TWI225714B (en) | 2003-12-05 | 2003-12-05 | Electrode structure for a light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92134469A TWI225714B (en) | 2003-12-05 | 2003-12-05 | Electrode structure for a light-emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200406936A TW200406936A (en) | 2004-05-01 |
TWI225714B true TWI225714B (en) | 2004-12-21 |
Family
ID=34588410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92134469A TWI225714B (en) | 2003-12-05 | 2003-12-05 | Electrode structure for a light-emitting device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI225714B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI504021B (en) * | 2011-08-11 | 2015-10-11 | Lextar Electronics Corp | Semiconductor light emitting device |
TWI583021B (en) * | 2014-09-19 | 2017-05-11 | 榮創能源科技股份有限公司 | Light emitting diode grain and manufaturing method thereof |
-
2003
- 2003-12-05 TW TW92134469A patent/TWI225714B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI504021B (en) * | 2011-08-11 | 2015-10-11 | Lextar Electronics Corp | Semiconductor light emitting device |
TWI583021B (en) * | 2014-09-19 | 2017-05-11 | 榮創能源科技股份有限公司 | Light emitting diode grain and manufaturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TW200406936A (en) | 2004-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105355733B (en) | It is micro-led | |
JP5547039B2 (en) | LED with uniform current spread | |
US9508902B2 (en) | Optoelectronic semiconductor device | |
JP7001728B2 (en) | Photoelectric element | |
US20060192223A1 (en) | Nitride semiconductor light emitting device | |
CN102881797B (en) | Gallium nitride based light emitting diode with current expanding structure | |
US20150171274A1 (en) | Led structure | |
CN102176501A (en) | Vertical gallium-nitride based light emitting diode | |
JP2011109143A (en) | Light-emitting device | |
CN207800630U (en) | A kind of UV LED chip and a kind of ultraviolet LED | |
TW201248939A (en) | Light emitting device, light emitting device package, and light unit | |
CN103165781A (en) | Light emitting diode element | |
CN205488192U (en) | Nitride -based flip -chip LED chip | |
TW201220536A (en) | Semiconductor light emitting device | |
US8963184B2 (en) | Pattern substrate structure for light emitting angle convergence and light emitting diode device using the same | |
CN105742436A (en) | Light emitting diode assembly and flip chip type light emitting diode packaging assembly | |
TWI225714B (en) | Electrode structure for a light-emitting device | |
CN110164853A (en) | A kind of curved surface LED light source | |
CN105633237A (en) | Vertical light emitting diode (LED) chip | |
CN111933768B (en) | Vertical integrated unit diode chip | |
CN102479893A (en) | Optoelectronic component | |
JP2005191459A (en) | Electrode structure of light emitting device | |
CN108417680B (en) | Semiconductor LED chip with high current diffusion efficiency | |
WO2020224643A1 (en) | Formal integrated unit diode chip | |
CN201266611Y (en) | Tree-shaped GaN-based LED chip electrode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |