TWI221910B - Apparatus for inspecting display, method for inspecting display and method for inspecting parasitic capacity - Google Patents
Apparatus for inspecting display, method for inspecting display and method for inspecting parasitic capacity Download PDFInfo
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1221910 A7 B7 五、發明説明(1 發明背景 本發明相關於一種用以檢 示器之方法及用以檢查寄生 相關於一種用於偵測一顯示 總電容量之比率的技術。 查顯示器之裝置、用以檢查顯 电谷量之方法,尤其,本發明 像素附隨之儲存電容量相對於 眾所皆知,在如液晶顯示器乏趣 — 、兩―以丄一 類的顯不器中,像素附隨 之電谷器與寄生電容器之電容量比率是決定顯示特性的重 :因數。精確測量的電容量比率帶來非常有效的資訊,可 取佳化面板設計或顯示缺陷的因果分析。 然而,此類電容器或寄生電容器通常具有。」pF以下的 電谷里值。因此’當探針等等與其接觸以進行測量時,此 類接觸會招致電容量變化,進而妨礙測量精確值。基於此 原因,边今,已藉由改變各種參數來偵測電容器與寄生電 容器的電容量總和,並且已依據此類偵測結果以理論與經 驗方式來評估寄生電容量,比率。 但是,由於傳統檢查方法只偵測電容器與寄生電容器的 電容量總和,所以無法實際上查明電容器與寄生電容器之 哪一項會實際上造成顯示缺陷。另外,近年來已採用主動 利用寄生電容器分伟的影像顯示方法《在此背景下,精確 评估寄生電容值已變成採用此類顯示方法的必要條件。 發明概要 本發明已考慮到此類技術問題,並且本發明的主要目的 是提供一種實行精確評估個別像素附隨之寄生電容量比率 的技術。 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1221910 A7 ________Β7_ 五、發明説明(2 ) 另外,本發明目的是提供一種實行分開評估一像素附隨 之各種寄生電容量比率的技術。 考慮到前述的目的,本發明提供一種配備一像素電極及 一用於控制將一電壓信號供應至該像素電極之開關的顯示 器檢查裝置,該顯示器檢查裝置包括:一信號輸出,用於 將所要供應之一電壓信號輸出至該像素電極;一光強度偵 測器’其能夠偵測位於一相對應於該顯示器上之該像素電 極之部位上的光強度;以及像素電壓偵測裝置,用於在該 開關從ON(開啟)狀態轉變成OFF(關閉)狀態情況下,依據該 光強度的變化量來獲得像去電壓的變化量。 換言之,會預先調查在該開關被切換成ON(開啟)狀態下 介於像素電壓與其相對應之光強度之間的關係,因此在該 開關從ON(開啟)狀態轉變成OFF(關閉)狀態情況下,可依據 該事件下之該光強度的變化量來獲得像素電壓的變化量。 另外’依據電荷守恆定律,,當該開關轉變成OFF(關閉)狀態 時’由於像素電壓變化可歸因於像素電極附隨的寄生電容 量’所以可從像素電壓的變化量來計算得出寄生電容量相 對於總電容量的比率。請注意,如本文中說明的顯示器包 括非發光顯示器或發光顯示器的一部份,如建構顯示幕的 基板產品。另外,顯示器包括液晶顯示器、發光二極體、 電漿顯示器、場致發光顯示器、有機場致發光顯示器及用 於保持像素上電壓的其他保持型顯示器。 另外,在本文中,開關係由開關元件所構成,並且配備 一掃描信號供應器,用於供應一由用於控制該開關元件之 -6 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1221910 A71221910 A7 B7 5. Description of the invention (1 Background of the invention The present invention relates to a method for detecting an indicator and a technique for inspecting parasitics and a technique for detecting a ratio of a displayed total capacitance. A device for inspecting a display, The method for checking the valley of the display power, in particular, the storage capacity of the pixel attached to the present invention is relatively well known. In a display device such as a liquid crystal display, which is not interesting, the pixel attached is The capacitance ratio of the electric valley device and the parasitic capacitor is the factor that determines the display characteristics: the factor. The accurately measured capacitance ratio brings very effective information, which can be used to optimize the panel design or cause and effect analysis of display defects. However, this type of capacitor Or parasitic capacitors usually have. ”Electric valleys below pF. Therefore, when a probe or the like comes into contact with it for measurement, such contact can induce changes in capacity, which hinders accurate measurement. For this reason, today , The total capacitance of capacitors and parasitic capacitors have been detected by changing various parameters, and theoretical and empirical methods have been used based on such detection results. To evaluate the parasitic capacitance and ratio. However, since the conventional inspection method only detects the sum of the capacitances of the capacitor and the parasitic capacitor, it is impossible to actually determine which of the capacitor and the parasitic capacitor would actually cause display defects. In addition, in recent years In the past, an image display method that actively uses parasitic capacitors has been adopted. "In this context, accurate evaluation of parasitic capacitance values has become a necessary condition for adopting such display methods. SUMMARY OF THE INVENTION The present invention has considered such technical problems, and the present invention The main purpose is to provide a technology that accurately evaluates the ratio of individual pixels to the accompanying parasitic capacitance. -5- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1221910 A7 ________ Β7_ V. Description of the invention (2) In addition, the object of the present invention is to provide a technique for separately evaluating a pixel with various parasitic capacitance ratios. In view of the foregoing object, the present invention provides a pixel electrode and a voltage signal for controlling a voltage signal. A display inspection device for a switch supplied to the pixel electrode, the display The device inspection device includes: a signal output for outputting a voltage signal to be supplied to the pixel electrode; and a light intensity detector capable of detecting a position corresponding to the pixel electrode on the display Light intensity; and a pixel voltage detection device for obtaining a change amount of image de-voltage according to a change amount of the light intensity when the switch is changed from an ON state to an OFF state. The relationship between the pixel voltage and its corresponding light intensity when the switch is switched to the ON state will be investigated in advance. Therefore, when the switch is switched from the ON state to the OFF state, The change amount of the pixel voltage can be obtained according to the change amount of the light intensity under the event. In addition, 'according to the law of conservation of charge, when the switch transitions to the OFF state', the change in the pixel voltage can be attributed to the pixel electrode The accompanying parasitic capacitance 'so the ratio of the parasitic capacitance to the total capacitance can be calculated from the change amount of the pixel voltage. Please note that displays as described in this article include non-light-emitting displays or parts of light-emitting displays, such as substrate products that construct display screens. In addition, the display includes a liquid crystal display, a light emitting diode, a plasma display, an electroluminescence display, an organic electroluminescence display, and other hold-type displays for holding a voltage on a pixel. In addition, in this article, the open relationship is composed of a switching element, and is equipped with a scanning signal supplier for supplying a -6 for controlling the switching element-This paper size applies the Chinese National Standard (CNS) A4 specification ( 210X 297 mm) 1221910 A7
關)信號所組成的掃描信號,並且能夠在〇ff(關 能由__ 雜^就的位準,因此,在⑽(關閉)狀 2…精由調整蔹掃描信號的電壓位準來改變要供應至 ^於一閘極與—源極之間的寄生電容量的電壓。—般而士 ,精由將-絕緣膜夾在中間所形成之寄生電容量的電容量 會按照供應的電壓而改變。因此,藉由採用此類建構,可 按照供應的電壓來掌控閘極源極寄生電容量的特性。請注 意,本文中提出的OFF(關閉)狀態不一定是完全〇ff(關 閉)狀J,而疋還包含有非常低電流流動的低電流區域。. 此外,在此情況下,如果掃描信號供應器的建構能夠調 整要供應至配備於該像素電極四周之掃描線的電壓(其中 會將掃描信號供應至該像素電極),則可防止配備於該像素 電極四周之其他掃描線的電場影響。另外在此項建構中, 如果鄰接該像素電極配置的掃描線建構儲存電容量的電極 ,則可藉由控制相關掃描線的電壓來改變供應至該儲存電 容量的電壓。在此情況下,藉由測量顯示器的光強度,就 可按照如上文所述的原理來計算儲存電容量相對於總電容 量的比率。 另外’如果信號輸出能夠控制電壓信號的ON/off(開/ 關)操作,則關於介於信號輸出(信號線)與像素電極之間的 寄生電谷量也可計算相對於總電容量的比率。 另外’如果信號輸出能夠調整要供應至配備於該像素電 極四周之信號線的電壓(其中會將電壓信號供應至該等信 號線),則可控制要供應至鄰接信號線的電壓,所以可使所 本纸張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 發明説明(4 ) 要別量之像素之鄰接信號線的電場影響降至最低限度。此 外還把夠计算介於鄰接信號線與該像素電極之間的寄生 電容量比率。 另外,本發明也可被理解成一種顯示器檢查裝置,其被 設計以將電壓供應至—像素電極,以在_相對應於該像素 I極的位置上呈現_給定電壓級’該顯示器檢查裝置包括 •电壓-發光性關係量測區段,用於測量介於當此類像素 電壓是固定值纟像素電壓與顯示器範圍外_相對應於該像 素電極之位置之發光性之間的關係;一電壓變化量測區段 ,用於參考該電壓-發光性關係量測區段中偵測結果,依據 一相對應於該像素電極之位置之發光性變化,從給定電壓 計算該像素電極之像素電壓的變化量,其中當使用該給定 電壓充電該該像素電極時會發生發光性變化;以及一寄生 電容量計算區段,用於依據該變化量來計算一像素附隨的 寄生電容量。 , 在此情況下,依據寄生電容量計算結果,可計算該寄生 電容量的直接值或該寄生電容量相對於總電容量的比率。 另外,在此項建構中,如果該電壓-發光性關係量測區段 被設計以分別測量發光性,假使在將互異的複數種電壓供 應至該像素電極以找出一介於該電壓與該發光性之間關係 呈現線性的區域時,則可精確獲得介於該像素電極與該發 光性之間的關係,而不會有測量錯誤影響❶請注意,在此 狀況下,關於像素電極與發光性之間的關係,該電壓·發光 性關係量測區段將相對於發光性的像素電壓儲存至儲存區 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Off) signal is composed of scanning signals, and can be at the level of 0ff (off can be __ miscellaneous level, so in ⑽ (closed) state 2 ... fine adjustment of the voltage level of the 蔹 scan signal to change the The voltage supplied to a parasitic capacitance between a gate and a source. In general, the capacitance of the parasitic capacitance formed by sandwiching an insulating film in between will change according to the supplied voltage. Therefore, by adopting this kind of construction, the characteristics of the gate-source parasitic capacitance can be controlled according to the supplied voltage. Please note that the OFF (off) state proposed in this article is not necessarily completely FF (off). In addition, 疋 also contains a low-current region where very low current flows. In addition, in this case, if the construction of the scanning signal supplier can adjust the voltage to be supplied to the scanning line provided around the pixel electrode (which will The scanning signal is supplied to the pixel electrode), it can prevent the influence of the electric field of other scanning lines provided around the pixel electrode. In addition, in this construction, if the scanning line configured adjacent to the pixel electrode is constructed and stored, The capacity electrode can change the voltage supplied to the storage capacity by controlling the voltage of the relevant scanning line. In this case, by measuring the light intensity of the display, the storage can be calculated according to the principle described above The ratio of the capacitance to the total capacitance. In addition, if the signal output can control the ON / OFF operation of the voltage signal, the amount of parasitic valley between the signal output (signal line) and the pixel electrode The ratio to the total capacitance can also be calculated. In addition, 'If the signal output can adjust the voltage to be supplied to the signal lines provided around the pixel electrode (where a voltage signal will be supplied to these signal lines), you can control the The voltage supplied to the adjacent signal lines, so that the paper size can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm). Description of the invention (4) The influence of the electric field of the adjacent signal lines with a certain number of pixels is minimized In addition, the ratio of the parasitic capacitance between the adjacent signal line and the pixel electrode can be calculated. In addition, the present invention can also be understood as a display Indicator inspection device, which is designed to supply voltage to a pixel electrode to present _ a given voltage level at a position corresponding to the pixel's I pole. The display inspection device includes a voltage-luminescence relationship measurement Section for measuring the relationship between when such pixel voltage is a fixed value, the pixel voltage and the luminosity outside the display range corresponding to the position of the pixel electrode; a voltage change measurement section for With reference to the detection result in the voltage-luminescence relationship measurement section, a change in the pixel voltage of the pixel electrode is calculated from a given voltage based on a change in luminescence corresponding to the position of the pixel electrode, where when using the A luminous change occurs when the pixel electrode is charged at a given voltage; and a parasitic capacitance calculation section is used to calculate a parasitic capacitance accompanying a pixel according to the change amount. In this case, according to the parasitic capacitance As a result of the capacity calculation, a direct value of the parasitic capacitance or a ratio of the parasitic capacitance to the total capacitance can be calculated. In addition, in this construction, if the voltage-luminescence relationship measurement section is designed to measure luminosity separately, if a plurality of different voltages are supplied to the pixel electrode to find a voltage between the voltage and the When the relationship between the luminosity is linear, the relationship between the pixel electrode and the luminosity can be accurately obtained without measurement error. Please note that in this case, the pixel electrode and the luminescence The voltage / luminosity relationship measurement section stores the pixel voltage relative to the luminosity to the storage area -8-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)
段,因此該電壓變化量測區段 光性之間的關係。 可很容易參考介於電壓與發 關元株㈣丨為將給定電壓供應至像素電極係藉由開 2 ’,並且-掃描信號供應器被提供,用以供應一 t號以控制該開關元件的⑽驗(開/關)操作。在此情 A-j果3掃描仏號供應器被設計以將該掃描信號構成 將:複數種互異電壓所組成的信號,其中電壓範圍介於 件=件徹低轉變成0N(開啟)狀態的電壓將該開關元 赵錄^轉變成0 F F (關閉)狀態的電壓之間,然後可將該等複 電壓供應至閘極_源極寄生電容量,藉此能夠仔細調查 閘極-源極寄生電容量的特性。 尤其在本建構中,如果該寄生電容量計算區段被設計, =依據得自介於該掃描信號之該等複數種電壓與來自給定 电壓之像素電極變化量之間關係之具有線性的部份,來計 算該開關元件之閘極.祕寄生電容量相對於像素總電容 量的比率’然後在排除液晶電容率變化(相當於所供應電壓 的變化)影響的數字中可獲得寄生電容量相對於總電容量 的比率,得自介於閘極電壓與像素電極電壓變化量之間的 關係0 另外,本發明也可被理解成一種用以檢查顯示器之方法 ,該方法包括下列步驟:(A)調查介於供應至—像素電極的 電壓-顯示器中之—部位的發光性之間的關係,該部位相 對應於該像素電極;(B)使用給定電壓充電該像素電極 ;(C)偵測該顯示器的發光性,該發光性相對應於在步 -9- 1221910 A7 B7 五、發明説明(6 驟(B)中充電的該像素電極;依據介於發光性與電壓之 間的關係,從在步驟(C)中偵測的發光性來評估該像素電極 的實際電壓’該關係係在步驟中調查得知;以及從 一介於步驟(B)中供應的給定電壓與步驟(D)中評估的電壓 之間的電壓差,評估一像素附隨之寄生電容量相對於該像 素總電容量的比率。在此情況下,可在步驟之前先執行 步驟(B)及(C)。 另外’ ·如〜果該方法被設計,以依據一開關元件的 ΟΝ/OFF(開/關)操作來處理步驟中充電的該像素電極的 判斷,其中該開關元件係由一由複數個位準互異之矩形脈 波所組成的掃描信號控制,然後可調查該閘極-源極寄生電 容量的特性變化,其相對應於該供應電壓。 在此情況下,一由位準逐漸改變之矩形脈波之陣列所組 成的波形被當作該掃描信號使用,因此能夠很容易調查該 閘極-源極寄生電容量的.特性變化,其相對應於該供應電 壓。 另外,本發明也可被理解成一種用以檢查寄生電容量之 方法’其中該寄生電容量係介於一配置在一顯示器面板内 之像素電極與配置在該像素電極四周之一掃描線和一信號 線之任一線路之間,該方法包括:步驟(A),以互相獨立方 式控制要供應至該掃描線及該信號線的電壓,該掃描線及 該信號線被配置在該像素電極四周,以及在控制電壓情、兄 下,測量該顯示器中一相對應於該像素電極之部位中的發 光性變化;以及步驟(B),調查一存在於該像素電極與該掃 10- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)Segment, so this voltage change measures the relationship between the optical properties of the segments. It is easy to refer to the voltage between the voltage and the voltage source. For supplying a given voltage to the pixel electrode system, turn on 2 ', and a -scanning signal supplier is provided to supply a t number to control the switching element. Check (on / off) operation. In this case, the AJ3 Scanner No. supplier is designed to form the scan signal into a signal composed of a plurality of mutually different voltages, in which the voltage range is between the voltage of a piece = a low and a voltage of 0N (on) The switch element is changed to a voltage of 0 FF (off) state, and then the complex voltage can be supplied to the gate-source parasitic capacitance, so that the gate-source parasitic capacitance can be carefully investigated. Capacity characteristics. Especially in this construction, if the parasitic capacitance calculation section is designed, = according to the linear part obtained from the relationship between the plurality of voltages between the scan signal and the pixel electrode change from a given voltage To calculate the gate of the switching element. The ratio of the parasitic capacitance to the total capacitance of the pixel 'is then obtained by excluding the effect of changes in the liquid crystal permittivity (equivalent to the change in the supplied voltage). The ratio of the total capacitance is obtained from the relationship between the gate voltage and the pixel electrode voltage change. In addition, the present invention can also be understood as a method for inspecting a display. The method includes the following steps: (A ) Investigate the relationship between the voltage supplied to-the pixel electrode-the luminosity of a part in the display, the part corresponding to the pixel electrode; (B) charge the pixel electrode with a given voltage; (C) detect Measure the luminosity of the display, which corresponds to the pixel electrode charged in step -9-1221910 A7 B7 5. Invention description (6 step (B); The relationship between the voltages is evaluated from the luminescence detected in step (C) to evaluate the actual voltage of the pixel electrode. The relationship is learned in the step; and from a given value supplied in step (B) The voltage difference between the voltage and the voltage evaluated in step (D) to evaluate the ratio of the parasitic capacitance attached to a pixel to the total capacitance of the pixel. In this case, step (B) can be performed before the step. And (C). In addition, if the method is designed to process the judgment of the pixel electrode charged in the step according to the ON / OFF operation of a switching element, wherein the switching element is The scanning signal is controlled by a plurality of rectangular pulse waves with different levels, and then the characteristic change of the gate-source parasitic capacitance can be investigated, which corresponds to the supply voltage. In this case, a The waveform formed by the quasi-gradually changing rectangular pulse wave array is used as the scanning signal, so it is easy to investigate the change in the characteristics of the gate-source parasitic capacitance, which corresponds to the supply voltage. In addition, this The invention can also be understood as a method for checking the parasitic capacitance. 'The parasitic capacitance is between a pixel electrode arranged in a display panel and a scanning line and a signal line arranged around the pixel electrode. Between any lines, the method includes: step (A), controlling the voltages to be supplied to the scanning line and the signal line in an independent manner, the scanning line and the signal line are arranged around the pixel electrode, and Control the voltage, and measure the change in luminescence in a part of the display corresponding to the pixel electrode; and step (B), investigate the existence of the pixel electrode and the scan 10- This paper size applies to China Standard (CNS) A4 size (210X 297 mm)
1221910 A7 ______B7 五、發明説明(7 ) 描線和該信號線之任一線路間之寄生電容量相對於總電容 量的比率。 如上文所述,藉由以獨立方式改變位於被檢查之像素電 極四周之佈線的電壓,就可以獨立方式調查形成於各別掃 描線或信號線與像素電極之間的寄生電容量。 另外,如果該方法被設計,以使步驟(A)之後執行的步 驟(B)被遞迴數次,然後可在改變測量條件的情況下,精確 獲得寄生電容量比率。 另外,在用以檢查寄生電容量之方法中,可調查介於像 素電極與信號線間之寄生電容量相對於總電容量的比率, 其方式為在使用給定電壓充電像素電極的狀態中,在改變 供應至信號線之電壓的情況下來測量發光性變化。 此外,在儲存電容量係形成於像素電極之一部份與另一 電極之間的情況下,可調查儲存電容量相對於總電容量的 比率’其方式為在使用給定電壓充電像素電極的狀態中, 在改變供應至另一電極之電壓的情況下來測量發光性變 化。因此’可精確調查非寄生電容量之部位相對於總電容 量的比率。 另外’在用以檢查寄生電容量之方法中,在供應至掃描 線與k號線之任一線路的電壓是固定電壓狀態中測量發光 性變化’該等掃描線與該等信號線不是應控制所供應電壓 的掃描線與信號線,因此該方法可排除測量方面的負面影 響’這些影響可歸因於其他掃描線或其他信號線的電壓。 圖式簡單說明1221910 A7 ______B7 V. Description of the invention (7) The ratio of the parasitic capacitance to the total capacitance between the trace and any one of the signal lines. As described above, by independently changing the voltage of the wirings located around the pixel electrodes under inspection, it is possible to independently investigate the parasitic capacitances formed between the respective scan lines or signal lines and the pixel electrodes. In addition, if the method is designed so that step (B) performed after step (A) is repeated several times, then the parasitic capacitance ratio can be accurately obtained with changing measurement conditions. In addition, in the method for checking the parasitic capacitance, the ratio of the parasitic capacitance to the total capacitance between the pixel electrode and the signal line can be investigated in a state in which the pixel electrode is charged with a given voltage, The change in luminescence is measured with the voltage supplied to the signal line changed. In addition, in the case where the storage capacitance is formed between a portion of the pixel electrode and the other electrode, the ratio of the storage capacitance to the total capacitance can be investigated. This is done by charging the pixel electrode with a given voltage. In the state, a change in luminescence is measured while changing a voltage supplied to another electrode. Therefore, it is possible to accurately investigate the ratio of the non-parasitic capacitance portion to the total capacitance. In addition, 'in the method for checking the parasitic capacitance, the luminous change is measured when the voltage supplied to any line of the scanning line and the k-line is a fixed voltage' These scanning lines and these signal lines are not to be controlled The scan lines and signal lines of the supplied voltage, so this method can eliminate the negative effects of measurement. These effects can be attributed to the voltage of other scan lines or other signal lines. Simple illustration
裝 訂Binding
% 本紙張尺度制規格(_297公董) 1221910 五、發明説明(8 為了更瞭解本發明及其優點,詩i去 細說明。. 1占4考配合附圖說明的詳 圖1顯示根據本發明一項具體實施例之顯示器裝 的原理圖。 一衣罝 圖2顯示圖1所示之顯示器檢查裝置所要檢查之液晶單元 基板之主要部份的同等電路圖。 圖3顯示圖丨所示之顯示器檢查裝置中之控制單元之詳細 建構的方塊圖。 圖4顯示本發明顯示器檢查方法原理的圖式,這是供應至 液晶單元基板之信號實例的波形圖。 圖5顯示本發明顯示器檢查方法原理的圖式,圖式中包括 用於呈現當充電像素電極時與相對應像素相關之部位中之 透射光強度變化的圖式(上半部),以及在此情況下所供應 之掃描信號與顯示信號的波形圖(下半部)。 圖6顯示根據本發明顯”示器檢查方法之用於測量介於像 素電壓與透射光強度之間關係之程序的流程圖。 圖7顯示圖6之步驟S9中所製作之介於像素電壓(橫座標 軸)與透射光電壓(縱座標軸)之間關係的圖式。 圖8顯示圖6之步驟S11中所製作之用於呈現介於透射光 電壓與像素電壓之間關係之資料表的原理圖。 圖9顯示本發明顯示器檢查方法程序的流程圖,用於計算 像素附隨之寄生電容量或儲存電容量相對於像素總電容量 的比率。 圖10顯示用於解說圖9所示之程序細節的圖式,其中包括 -12 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) •以圖表呈現步驟S17及S19測量結果的資料表(下半部); 用於呈現步驟S22中使用之介於透射光電壓與像素電壓之 間關係的圖式(左上部);以及用於呈現步驟S23至S25中使 用之介於測量條件變化量與像素電壓變化量之間關係的圖 式(右上部)。 圖11顯示在依據圖9所示之程序測量閘極-源極寄生電容 量比率之後,供應至液晶單元基板之信號之實例的波形圖。 圖12顯示在依據圖9所示之程序測量信號線·像素電極寄 生電容量比率之後,供應至液晶單元基板之信號之實 波形圖。 圖13顯示在依據圖9所示之程序測量儲存電容量比率之 後,供應至液晶單元基板之信號之實例的波形圖。 田圖14顯示在依據圖9所示之程序測量閘極·源極寄生電容 置比率又後’供應至液晶單元基板之信號之另一實例的波 形圖。 發明較佳具體實施例 曰下又中將依據附圖所示的具體實施例來詳細說明本發 圖1顯示根據本發明-項具體實施例之顯示 的原理建構圖。 一衮置‘ 顯示器檢查裝置丨係用來(例如)檢查建構液晶顯于 顯::區段的液晶單元基板2,並且該顯示器檢查袈置包括 ”至*3’可用來放置液晶單元基板2;信號供應器( 號供應器;信號輸出)4’用來將電壓信號供應至放置^ A7 B7 五、發明説明(1〇 ) 座3上的液晶單元基板2 ;光強度偵測器5 ,用來測量液晶單 元基板2上的光強度;光源6,其被配備在相對於放置在臺 座3上之液晶單元基板2之對稱於光強度偵測器5的位置上 ,光源控制器7,用於控制光源6的操作;以及控制單元8 ,用於控制信號供應器4,並且會將光強度偵測器5的偵測 結果輸入至控制單元。 首先’說明要經過顯示器檢查裝置1檢查的液晶單元基板 2。 一一 圖2顯示液晶單元基板2之同等電路的部份建構。如圖2 所示,液晶單元基板2包括··複數條信號線1〇和掃描線丨丨(圖 中只有顯示其一部份),用於以往义和y方向互相交叉的方式 來共同構成矩陣排列;以及開關元件(開關)12和像素電極 13,其被配置在信號線1 〇與掃描線〖丨的交又點上。 開關元件12係由當作三端子裝置的薄膜電晶體(tft)所 構成’並且包括源極電極14、閘極電極15及汲極電極16。 另外’像素電極13會連接到汲極電極16。像素電極13係由 顯示電極17與儲存電容量電極19所組成,其中顯示電極^ 係用於將電壓供應至圖中未顯示的液晶材料,而儲存電容 量電極19係用於建構被配備在介於顯示電極丨7與鄰接連接 像素电極13之知r描線11的和r描線11的儲存電容量(下文 中將此類的鄰接型掃描線11稱為「儲存電容量線18」)。 顯示電極17被配置圖中未顯示之共同電極的對面·",並且 液晶層(圖中未顯示)被配置在介於顯示電極17與共同電極 之間’而對位膜分別被插入在介於液晶層與顯示電極丨了之 -14-% Specifications of this paper (_297 Gong Dong) 1221910 V. Description of the invention (8 In order to better understand the invention and its advantages, poem i will go into detail. The schematic diagram of the display device of a specific embodiment. Figure 2 shows the equivalent circuit diagram of the main part of the liquid crystal cell substrate to be inspected by the display inspection device shown in FIG. 1. FIG. 3 shows the inspection of the display shown in FIG. Block diagram of the detailed construction of the control unit in the device. Figure 4 shows the principle of the display inspection method of the present invention, which is a waveform diagram of an example of the signal supplied to the substrate of the liquid crystal unit. Figure 5 shows the principle of the display inspection method of the present invention. In the figure, the diagram includes a diagram (upper half) for presenting a change in transmitted light intensity in a portion associated with a corresponding pixel when the pixel electrode is charged, and a scanning signal and a display signal supplied in this case. Waveform diagram (bottom half). Figure 6 shows the procedure for measuring the relationship between pixel voltage and transmitted light intensity according to the display inspection method of the present invention. Flowchart. Fig. 7 shows the relationship between the pixel voltage (horizontal axis) and transmitted light voltage (ordinate axis) produced in step S9 of Fig. 6. Fig. 8 shows the graph produced in step S11 of Fig. 6. Schematic diagram of a data table used to represent the relationship between transmitted light voltage and pixel voltage. Figure 9 shows a flowchart of the method of the display inspection method of the present invention, which is used to calculate the pixel-associated parasitic capacitance or storage capacitance relative to The ratio of the total capacitance of the pixel. Figure 10 shows a diagram for explaining the details of the program shown in Figure 9, including -12 paper sizes applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). A data table presenting the measurement results of steps S17 and S19 (lower half); a diagram for presenting the relationship between transmitted light voltage and pixel voltage (upper left) used in step S22; and for presenting steps S23 to The diagram used in S25 is the relationship between the change in measurement conditions and the change in pixel voltage (upper right). Figure 11 shows the gate-source parasitic capacitance ratio measured according to the procedure shown in Figure 9. An example waveform of a signal supplied to the liquid crystal cell substrate is shown in FIG. 12. FIG. 12 shows a real waveform of the signal supplied to the liquid crystal cell substrate after the signal line-pixel electrode parasitic capacitance ratio is measured according to the procedure shown in FIG. Fig. 13 is a waveform diagram showing an example of a signal supplied to a liquid crystal cell substrate after measuring a storage capacitance ratio according to the procedure shown in Fig. 9. Fig. 14 shows a measurement of gate and source parasitics according to the procedure shown in Fig. 9. The waveform diagram of another example of the signal provided by the capacitor to the liquid crystal cell substrate. The preferred embodiment of the invention will be described in detail below according to the specific embodiment shown in the drawings. The principle construction diagram of the display of a specific embodiment of the present invention. A set 'display inspection device is used to (for example) inspect the LCD panel 2 of the constructed LCD: section, and the display inspects the arrangement. Including "to * 3 'can be used to place the liquid crystal cell substrate 2; signal supply (signal supply; signal output) 4' is used to supply voltage signals to the place ^ A7 B7 2. Description of the invention (10) The liquid crystal cell substrate 2 on the base 3; a light intensity detector 5 for measuring the light intensity on the liquid crystal cell substrate 2; a light source 6, which is provided opposite to the base 3 At the position of the liquid crystal cell substrate 2 which is symmetrical to the light intensity detector 5, the light source controller 7 is used to control the operation of the light source 6; and the control unit 8 is used to control the signal supply 4, and the light intensity is detected. The detection result of the detector 5 is input to the control unit. First, the liquid crystal cell substrate 2 to be inspected by the display inspection device 1 will be described. Fig. 2 shows a partial construction of an equivalent circuit of the liquid crystal cell substrate 2. As shown in FIG. 2, the liquid crystal cell substrate 2 includes a plurality of signal lines 10 and scan lines 丨 丨 (only a part of which is shown in the figure), which are used to form a matrix in a manner in which the sense and y directions cross each other. Arrangement; and a switching element (switch) 12 and a pixel electrode 13 which are arranged at intersections of the signal line 10 and the scanning line 〖丨. The switching element 12 is composed of a thin film transistor (tft) as a three-terminal device, and includes a source electrode 14, a gate electrode 15, and a drain electrode 16. In addition, the 'pixel electrode 13 is connected to the drain electrode 16. The pixel electrode 13 is composed of a display electrode 17 and a storage capacitor electrode 19, where the display electrode ^ is used to supply voltage to a liquid crystal material not shown in the figure, and the storage capacitor electrode 19 is used to construct The storage capacitances of the r-line 11 and the r-line 11 are connected to the display electrode 7 and the pixel electrode 13 adjacently (hereinafter, such an adjacent scanning line 11 is referred to as a "storage capacitance line 18"). The display electrode 17 is disposed opposite to a common electrode not shown in the drawing, and a liquid crystal layer (not shown) is disposed between the display electrode 17 and the common electrode, and the alignment films are respectively inserted in the media. In the liquid crystal layer and the display electrode 丨 -14-
1221910 A7 B7 五、發明説明(11 間及介於液晶層與共同電極之間。 在如上文所述的液晶單元基板2中,會將電壓信號供應至 信號線10。電壓信號係經由開關元件12供應至像素電極13 ,其中會依據供應至掃描線11的掃描信號Vgate來執行開關 元件12的ΟΝ/OFF(開/關)控制,藉此將給定電壓供應至顯示 電極17。此時,會將共同信號電壓供應至面對顯示電極17 的共同電極,藉此由於介於共同電極與顯示電極17之間的 電位差而發生液晶層反轉(操作)。 在具有如上文所述之建構的液晶單元基板2中,如上文所 述,「閘極-源極」寄生電容量Cgs必然被形成於掃描線u 與像素電極13之間;以及「信號線-像素電極」寄生電容量 Cis必然被形成於信號線10與像素電極13之間。 接著,說明顯示器檢查裝置1的信號供應器4。 如圖1所示’信號供應器4包括:信號產生器21 ;以及一 組探針,這是由用於共同·»電極的探針(下文中稱為「共同電 極探針」)22、用於掃描線的探針(下文中稱為「掃描線探 針」)23及用於信號線的探針(下文中稱為r信號線探針」)24 所組成,這些探針以串聯方式連接信號產生器21。 k號產生器2 1係用來依據來自於控制單元$的控制信號 來產生要供應至液晶單元基板2之共同電極、掃描線丨丨及信 號線10的電壓信號。另外,還配備共同電極探針22的電極 22a,以便可同時連接臺座3上之液晶單元基板2的共同電極 ,並且經由電極22a將信號產生器21供應的共同電壓信號供 應至共同電極。1221910 A7 B7 V. Description of the invention (11 cells and between the liquid crystal layer and the common electrode. In the liquid crystal cell substrate 2 as described above, a voltage signal is supplied to the signal line 10. The voltage signal is transmitted through the switching element 12 It is supplied to the pixel electrode 13, where ON / OFF control of the switching element 12 is performed according to the scan signal Vgate supplied to the scan line 11, thereby supplying a given voltage to the display electrode 17. At this time, the A common signal voltage is supplied to a common electrode facing the display electrode 17, whereby a liquid crystal layer inversion (operation) occurs due to a potential difference between the common electrode and the display electrode 17. In a liquid crystal having a structure as described above, In the unit substrate 2, as described above, the "gate-source" parasitic capacitance Cgs is necessarily formed between the scan line u and the pixel electrode 13; and the "signal line-pixel electrode" parasitic capacitance Cis is necessarily formed Between the signal line 10 and the pixel electrode 13. Next, the signal supplier 4 of the display inspection device 1 will be described. As shown in FIG. 1, the 'signal supplier 4 includes: a signal generator 21; and a set of probes. This is composed of a probe for a common electrode (hereinafter referred to as a "common electrode probe") 22, a probe for a scan line (hereinafter referred to as a "scan line probe") 23, and a signal for Line probes (hereinafter referred to as r signal line probes) 24, these probes are connected in series to the signal generator 21. The k-number generator 21 is used to control the signal from the control unit $. To generate voltage signals to be supplied to the common electrode, scan line, and signal line 10 of the liquid crystal cell substrate 2. In addition, the electrode 22a of the common electrode probe 22 is also provided so that the liquid crystal cell substrate on the pedestal 3 can be connected at the same time 2 and a common voltage signal supplied from the signal generator 21 to the common electrode via the electrode 22a.
12219101221910
另外,掃描線探針23包括三個電極23a。這三個電極23a 被=式,以便連接裝設在臺座3上之液晶單元基板2上排列 之掃描線11的三條鄰接信號線,並且可經由電極23a將信號 產生器21產生的掃描信號Vgate供應至這三條掃描線u。因 此,可經由掃描線探針23將信號同時供應至掃描線u及其 鄰接掃描線11(即,儲存電容量線18)。 清注意,信號產生器2 1的建構能夠將掃描信號Vgate個別 供應至掃描線探針23的三個電極23a。 另外,掃描線探針24總共包括六個電極24a。這六個電極 24a被形式,以便同時連接裝設在臺座3上之液晶單元基板2 上排列之掃描線1 〇的六條鄰接信號線,並且可經由電極24a 將信號產生器21產生的顯示信號vsig供應至這六條掃描線 10。清注意’仏號產生器21的建構能夠將顯示信號vsig個 別供應至這六個電極24a ^ 掃描線探針23及信號線探針24可被放置,以便將其電極 23a與24a連接至裝設在臺座3上之液晶單元基板2上的的預 期掃描線11或預期信號線1〇。 接著,說明光源6。 光源6被配置在液晶單元基板2的背面,藉此使光源6發射 的光線穿透液晶單元基板2,並且反射至光強度偵測器5。 請注意,圖中未顯示的遮光板或圖中未顯示的隔板被配置 在介於光源6與液晶單元基板2之間接近液晶單元基板2的 位置,以便防止光源6照射非所要測量之像素的像素。 請進一步注意,當所要檢查的液晶單元基板2屬於反射型 -16- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1221910 A7 ___________Β7 五、發明説明(13 ) 基板時’最好將光源6配置在液晶單元基板2的正面(即,與 光強度偵測器5同一面上)。另外,當要檢查發光型時,則 不一定需要配置光源6。 接著,說明光強度偵測器5。 如圖1所示,光強度偵測器5包括場確認望遠鏡26、中繼 透 1¾ 27、限度遮罩(limit mask)28及光乘法器管(photomultiplier tube)29。並且,光強度偵測器5的建構方式為,可偵測穿透 液晶單元基板2内一給定位置中一個或數個像素之來自於 光源6的光強度,並且可將所偵測值轉換成要輸出至控制單 元8的電壓。此處,可使用光電管、光二極體、光電晶體等 等來取代光乘法器管29。 接著,說明控制單元8。 如圖1所示,控制單元8包括電腦31、RS232C連接埠32及 A/D轉換器(ADC)電路板33。 如圖3所示,電腦31包括CPU(像素電壓變化偵測裝置)34 及儲存區段35。如圖3所示,CPU 34包括電壓-發光性關係 量測區段36、電壓變化量測區段37及寄生電容量計算區段 38 〇 電壓-發光性關係量測區段36的建構能夠經由RS232C連 接埠32輸出用於控制信號產生器21的控制信號,以便將所 要的電壓信號從信號產生器21輸出至掃描線11、信號線10 及共同電極。另外,在此情況下,電壓·發光性關係量測區 段36被設計,以便將藉由將光強度偵測器5輸出的電壓提供 給A/D轉換器電路板33中的A/D轉換所獲得的數位信號輸 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1221910In addition, the scanning line probe 23 includes three electrodes 23a. These three electrodes 23a are set to connect three adjacent signal lines of the scanning lines 11 arranged on the liquid crystal cell substrate 2 installed on the pedestal 3, and the scanning signal Vgate generated by the signal generator 21 can be passed through the electrode 23a. Supply to these three scan lines u. Therefore, signals can be supplied to the scanning line u and its adjacent scanning line 11 (i.e., the storage capacity line 18) simultaneously via the scanning line probe 23. It is to be noted that the signal generator 21 is configured to individually supply the scanning signal Vgate to the three electrodes 23a of the scanning line probe 23. In addition, the scanning line probe 24 includes a total of six electrodes 24a. These six electrodes 24a are formed so as to simultaneously connect six adjacent signal lines of the scanning lines 10 arranged on the liquid crystal cell substrate 2 mounted on the pedestal 3, and the display generated by the signal generator 21 can be transmitted through the electrodes 24a. The signal vsig is supplied to these six scan lines 10. Note that the construction of the horn generator 21 can individually supply the display signal vsig to the six electrodes 24a. The scanning line probe 23 and the signal line probe 24 can be placed in order to connect their electrodes 23a and 24a to the installation. The expected scanning line 11 or the expected signal line 10 on the liquid crystal cell substrate 2 on the pedestal 3. Next, the light source 6 will be described. The light source 6 is disposed on the back surface of the liquid crystal cell substrate 2 so that the light emitted by the light source 6 passes through the liquid crystal cell substrate 2 and is reflected to the light intensity detector 5. Please note that a light shielding plate not shown in the figure or a spacer not shown in the figure is arranged near the liquid crystal cell substrate 2 between the light source 6 and the liquid crystal cell substrate 2 in order to prevent the light source 6 from irradiating pixels not to be measured Pixels. Please further note that when the liquid crystal cell substrate 2 to be inspected is of a reflective type-16- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1221910 A7 ___________B7 V. Description of the invention (13) The light source 6 is arranged on the front surface of the liquid crystal cell substrate 2 (that is, on the same surface as the light intensity detector 5). When the light emission type is to be checked, the light source 6 does not necessarily need to be arranged. Next, the light intensity detector 5 will be described. As shown in FIG. 1, the light intensity detector 5 includes a field confirmation telescope 26, a relay lens 1 27, a limit mask 28, and a photomultiplier tube 29. In addition, the light intensity detector 5 is constructed in such a manner that it can detect the light intensity from the light source 6 penetrating one or several pixels in a given position in the liquid crystal cell substrate 2 and can convert the detected value This is the voltage to be output to the control unit 8. Here, instead of the light multiplier tube 29, a photo tube, a photodiode, a photo crystal, or the like may be used. Next, the control unit 8 will be described. As shown in FIG. 1, the control unit 8 includes a computer 31, an RS232C port 32 and an A / D converter (ADC) circuit board 33. As shown in FIG. 3, the computer 31 includes a CPU (pixel voltage change detection device) 34 and a storage section 35. As shown in FIG. 3, the CPU 34 includes a voltage-luminescence relationship measurement section 36, a voltage change measurement section 37, and a parasitic capacitance calculation section 38. The voltage-luminescence relationship measurement section 36 can be constructed by The RS232C port 32 outputs a control signal for controlling the signal generator 21 so as to output a desired voltage signal from the signal generator 21 to the scanning line 11, the signal line 10, and the common electrode. In addition, in this case, the voltage-luminescence relationship measurement section 36 is designed to supply the voltage output from the light intensity detector 5 to the A / D conversion in the A / D converter circuit board 33. The obtained digital signal output -17- This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) 1221910
入至電壓·發光性關係量測區段36。另外,如下文所述,電 壓-發光性關係量測區段36的建構能夠將供應至信號線ι〇 之顯示信號Vsig的電壓(像素電壓)與關於a/d轉換器電路 板33輸出之光強度的數位信號相關,並且能夠將此類關係 當作資料表儲存至儲存區段35。 同樣地,電壓變化量測區段37的建構能夠經由尺3232(:連 接槔32輸出用於控制信號產生器21的控制信號,以便將所 要的電壓信號從信號產生器21輸出至掃描線u、信號線1〇 及共同電極。另外,電壓變化量測區段37被設計,以便在 A/D轉換器電路板33中將光強度偵測器5輸出的電壓轉換 成數位信號’並且輸入所轉換的數位信號。另外,如下文 所述’電壓變化量測區段37被建構,以便能夠··針對依據 從信號產生器21輸出至掃描線11的掃描信號vgate來電性 充電像素電極13的情況下,依據光強度偵測器5的輸出來偵 測一相對應於液晶單元基板2上之像素電極13之部位的光 強度(發光性);以及利用此類光強度變化來計算像素電極 13上的電壓如何變化。依據計算結果,電壓變化量測區段 37被設計以便利用儲存於儲存區段35中關於像素電壓與光 強度之間關係的資料表。 寄生電容量計算區段38被設計,以將電壓變化量測區段 37中計算的像素電極變化視為像素附隨的寄生電容量屬性 ’因此可藉由使用如下文所述的預先決定公式來計算像素 附隨之寄生電容量與像素總電容量的電容量比率。 接著’說明藉由使用顯示器檢查裝置1之檢查方法的原 -18 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂Enter the voltage-luminescence relationship measurement section 36. In addition, as described below, the voltage-luminescence relationship measurement section 36 is constructed so that the voltage (pixel voltage) of the display signal Vsig supplied to the signal line ι0 and the light output from the a / d converter circuit board 33 Intensity of digital signals is correlated, and such relationships can be stored as a table into the storage section 35. Similarly, the construction of the voltage change measurement section 37 can output a control signal for controlling the signal generator 21 via the ruler 3232 (: connection 槔 32) so as to output a desired voltage signal from the signal generator 21 to the scanning line u, The signal line 10 and the common electrode. In addition, the voltage change measurement section 37 is designed to convert the voltage output from the light intensity detector 5 into a digital signal in the A / D converter circuit board 33 and input the converted signal. In addition, as described below, the 'voltage change measurement section 37 is structured so as to be able to ················ the case of electrically charging the pixel electrode 13 according to the scanning signal vgate outputted from the signal generator 21 to the scanning line 11 , Detecting the light intensity (luminescence) of a portion corresponding to the pixel electrode 13 on the liquid crystal cell substrate 2 according to the output of the light intensity detector 5; and using such light intensity changes to calculate the light intensity on the pixel electrode 13 How the voltage changes. According to the calculation result, the voltage change measurement section 37 is designed to use a data table stored in the storage section 35 on the relationship between the pixel voltage and the light intensity. The parasitic capacitance calculation section 38 is designed to treat the pixel electrode change calculated in the voltage change measurement section 37 as the parasitic capacitance attribute accompanying the pixel. Therefore, it can be determined by using a predetermined formula as described below. Calculate the capacitance ratio of the pixel-associated parasitic capacitance to the total capacitance of the pixel. Next, the original description of the inspection method by using the display inspection device 1-18-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Staple
1221910 A71221910 A7
理。 如圖2所示,顯示器檢查裝置丨檢查液晶單元基板2之像素 電極13上寄生的閘極-源極寄生電容量Cgs和信號線-像素 電極寄生電容量Cis,以及形成的儲存電容量〇。現在:,假 設將如圖4所示的掃描信號Vgate、顯示信號…匕及補償驅 動信號Vs分別同時供應至掃描線丨丨、信號線1〇及儲存電容 量線18。此處,掃描信號Vgate、顯示信號Vsig及補償驅動 信號Vs都是矩形脈波。掃描信號Vgate被設計成由用於將開 關元件12轉變成ON(開啟)狀態的電壓乂§1與用於將開關元 件12轉變成〇FF(關閉)狀態的電壓vg3所組成的信號。另外 ’補償驅動信號Vs係由電壓Vg3及低於電壓Vg3之其他電壓 Vg2所組成,並且顯示信號Vsig被設計成由用於將開關元件 12轉變成ON(開啟)狀態的電壓Vgl與要供應至像素電極13 的目標電壓Vsl與用於將像素電極13轉變成OFF(關閉)狀態 的電壓Vs2所組成的信號〜 、 當經由掃描線11將電壓Vgl供應至開關元件12時,開關 元件12被切換至〇N(開啟)狀態,藉此將像素電極13充電至 同時供應至信號線10之顯示信號Vsig的目標電壓ysi。之後 ’當掃描信號Vgate從電壓Vgl下降至電壓Vg3時,則開關 元件12被切換至〇FF(關閉)狀態。在此事件中,由於會在像 素内保存電荷,因此以下公式(1)表達的關係生效: [公式1]Management. As shown in FIG. 2, the display inspection device inspects the gate-source parasitic capacitance Cgs and signal line-pixel electrode parasitic capacitance Cis parasitic on the pixel electrode 13 of the liquid crystal cell substrate 2 and the formed storage capacitance. Now: Suppose that the scan signal Vgate, the display signal, ..., and the compensation drive signal Vs shown in Fig. 4 are simultaneously supplied to the scan line 丨, the signal line 10, and the storage capacitor line 18, respectively. Here, the scanning signal Vgate, the display signal Vsig, and the compensation driving signal Vs are all rectangular pulse waves. The scan signal Vgate is designed as a signal composed of a voltage 乂 §1 for switching the switching element 12 to the ON state and a voltage vg3 for switching the switching element 12 to the 0FF state. In addition, the compensation driving signal Vs is composed of a voltage Vg3 and other voltages Vg2 lower than the voltage Vg3, and the display signal Vsig is designed by a voltage Vgl for converting the switching element 12 to an ON state and a voltage to be supplied to The signal composed of the target voltage Vsl of the pixel electrode 13 and the voltage Vs2 for turning the pixel electrode 13 to the OFF state ~ When the voltage Vgl is supplied to the switching element 12 via the scanning line 11, the switching element 12 is switched To the ON state, thereby charging the pixel electrode 13 to the target voltage ysi of the display signal Vsig which is simultaneously supplied to the signal line 10. After that, when the scan signal Vgate drops from the voltage Vgl to the voltage Vg3, the switching element 12 is switched to the OFF state. In this event, since the charge is stored in the pixel, the relationship expressed by the following formula (1) takes effect: [Formula 1]
Vpixel =: Vsl-IM (Vgl-Vg3) (Vg2-Vg3) - cOT (Vsl-Vs2) ---(1) -19 - 本紙張尺度適用中國國家標準(CNS) A4规格(210 X 297公釐)Vpixel =: Vsl-IM (Vgl-Vg3) (Vg2-Vg3)-cOT (Vsl-Vs2) --- (1) -19-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) )
裝Hold
k 1221910 A7 ------一 ―_B7 五、發明説明(16 ) -- 此處’ Vpixel標示當開關元件12被切換至〇FF(關閉)狀態 時像素電極13的實際電壓,而Call標示像素附隨的總電容量 ’即’(Cs + CLC + Cgs + Cis)。請注意,Clc標示介於像素 電極13與共同電極間之液晶單元的電容量。 在公式(1),由於已知目標電壓Vsi及電壓Vgl、Vg2、Vg3 和Vs2 ’所以如果可測量像素電極電壓Vpixel,則應可獲得 各自寄生電容量或儲存電容量(^相對於總電容量Call的比 率,即,Cgs/Cal卜Cs/Call及Cis/CaU,例如,藉由個別改 變電壓Vg2、Vg3及目標電壓Vsl,以及藉由測量在此情況 下介於像素電壓Vpixel與目標電壓Vs之間電位差的變化。 附帶說明’如上文所述之顯示檢查裝置1的建構能夠將所 期望電壓供應至液晶單元基板2上的掃描線丨丨、信號線1〇 及共同電極’並且能夠測量在此情況下之液晶單元基板2 上的光強度。因此,會預先將像素電極13固定在給定電壓 ’並且測量液晶單元基板2上之像素電極13相對應部位的光 強度’藉此顯示器檢查裝置1可理解介於像素電壓Vpixel與 光強度之間的關係。另外,會改變掃描信號Vgate、顯示信 號Vsig及補償驅動信號\^的電壓,並且觀念在此情況下之 像素電極13相對應部位的光強度變化,藉此顯示器檢查裝 置1可偵測歸因於寄生電容量或儲存電容量Cs之每項電容 量的像素電壓Vpixel變化。然後,從每個所供應信號的電 壓變化與像素電壓Vpixel變化之間的關係,可獲得各自寄 生電容量或儲存電容量Cs對總電容量Call的比率。 以下是前面說明内容的具體實例。 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1221910 A7 ____ B7 五、發明説明(17 ) 圖5所示的曲線圖實例(其中縱座標軸標示時間,而橫座 標轴標示光強度),為在將顯示信號Vsig及掃描信號Vgate 供應至像素電極13及與其連接之開關元件12的情況下光強 度的時間變化。圖式下面顯示在此情況下所供應之掃描信 號Vgate及顯示信號Vsig的波形。 如圖5所示,當掃描信號vgate從OFF(關閉)狀態上升至 ON(開啟)狀態且顯示信號Vsig上升至〇N(開啟)狀態時,會 暫時遞增相關像素的光強度(在圖5所示的曲線圖中,以向 下移動的線條來標示光強度遞增)。之後,當掃描信號Vgate 被切換至OFF(關閉)狀態時,會遞減相關像素的光強度。另 外,當顯示信號Vsig從ON(開啟)狀態下降至OFF(關閉)狀態 ,會更加遞減相關像素的光強度。 此處,假設已預先測量介於像素電壓Vpixel與光強度之 間的關係,則降低掃描信號Vgate之前的光強度導出與該狀 況相關之像素電壓13的喺素電壓VT1,而降低掃描信號 Vgate之後的光強度導出與該狀況相關之像素電壓丨3的像 素電壓Vt2。另外,按照前面提及的公式(1),評估在降低 掃描信號Vgate情況下像素電極Vti - \^2的減少額與閘極_ 源極寄生電容量Cgs有關。因此,可計算閘極-源極寄生電 谷量Cgs相對於總電容量call的比率Cgs/Call,其方式為將 像素電極VT1 - Vn的減少額除降低掃描信號Vgate情況下 的知描信號Vgate電壓變化量。 同樣地,可計算信號線-像素電極寄生電容量Cis相對於 總電容量Call的比率Cis/Call,其方式為將像素電極Vpixel _______ -21 - 本紙張尺度適财國國家標準(CNS) A4規格(21GX297公嫠) ' ______ A7 五、發明^ρ—一·~ 的減少額除降低顯厂、丄 ,雖然圖中未顯不信號Vsig情況下的電壓減少額。此外 驅動信號Vs的電=、’但是要供應至儲存電容量線U之補償 化量,藉此可計箕被改變,並且測量在此情況下的電壓變 鱼。 倚存電容量Cs相對於總電容量call的比 囚此 ^ , . L ^ 對每個像素來執行此類測量,就可測量螢 曰沾杳《,量與儲存電容量CS的分佈。另外,藉由從液 曰9、際值等等以自Cal1獲得CL。,也可獲得寄生電容量與 儲存電容量Cs的實際值。 、下文中將說明針對執行根據本發明之顯示器檢查方 法(寄生電容量檢查方法),顯示器檢查裝置丨的實際運作。 圖6顯示藉由使用顯示器檢查裝置1來測量位於液晶單元 基板2上之像素相關位置上的像素電壓與透射光強度之間 關係之程序的流程圖。此處,允許將共同電極探針22接觸 於共同電極,並且信號線探針24及掃描線探針23被定位, 以使探針接觸於相對應於所要測量之像素的信號線丨〇及掃 描線11。另外,光強度偵測器5被配置在液晶單元基板2上 面相對應於所要測量之像素的位置《然後,控制單元8的 CPU 34内的電壓-發光性關係量測區段36開始進行測量。 在此情況下,電壓-發光性關係量測區段36先設定用於靜 態驅動像素的驅動電壓(步驟S1)。此外,靜態驅動代表將 給定電壓供應至像素電極13,同時使開關元件12維持 ON(開啟)狀態的動作。換言之’在步驟S1,設定要供應至 像素電極13的電壓。請注意,電壓包括複數種電壓’其相 -22- 本紙張尺度適財S S家標準(CNS) A4规格x 1221910 A7 _— —__B7__ 五、發明説明(19 ) 對應於從起始電壓級至最終電壓級逐步設定的複數個給定 電壓級。另外,電壓-發光性關係量測區段36先設定用於靜 態驅動像素的驅動波形(步驟S2)。 接著’電壓-發光性關係量測區段36驅動像素並且測量其 光強度。針對前文所述,先從相對應於步驟S2中設定之複 數個電壓的電壓級中設定起始電壓級,以使像素起始相關 顯不(步驟S3)。然後,電壓_發光性關係量測區段36控制信 號產生器21以使用起始電壓級來靜態驅動像素(步驟S4)。 即’將用於將開關元件12轉變成〇N(開啟)狀態的信號輸出 至掃描線11 ’將用於顯示如步驟S3中設定之起始電壓級的 電壓供應至信號線10〇在此情況下,會預先將固定電壓供 應至接觸於掃描線n之掃描線探針23的電極,而不是供應 至相對應於要測量光強度之像素的掃描線1丨,以便將像素 的開關元件12轉變成0FF(關閉)狀態。此外,會預先將特定 電壓供應至接觸於信號線10之信號線探針24的電極,而不 疋供應至相對應於要測量光強度之像素的信號線1 〇,以使 來自光源6的光線不會穿透與信號線10相關的像素。 接著,電壓·發光性關係量測區段36按預先決定的資料數 目,來測量穿透液晶單元基板2而入射光強度偵測器5的透 射光光強度’即,透適A/D轉換器電路板33從光強度偵測 器5輸出的電壓(步驟S5)。另外,計算資料平均數,以計算 相對應於透射光強度的電壓(步驟S6)。 接著,電壓·發光性關係量測區段36判斷在步驟84至86 執行的測量是否相當於在步驟S 1中設定之複數種電壓的最 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公复)------ 1221910 A7 B7 五、發明説明(2〇 終電壓級(步驟S7)。由於本實例係在起始電壓級下測量的 案例,所以會在步驟S8+設定所要測量的後續電壓級,並 且程序再次回到步驟S 4 ^ 之後’針對複數級電壓級來執行步驟34至S7,並且使用 最終電壓級完成測量時,程序進行到步驟S9。在步驟S9中 ,結式標繪與供應至信號線1〇之寫入電壓(像素電壓 Vpixel)相關的透射光電壓。換言之,藉由在圖7所示的圖表 中標繪結果以解說像素電壓Vpixel與透射光電壓%之間的 關係,就可獲得如圖7所示之像素電壓Vpixel與透射光電壓 VT的關係曲線。 另外,基於測量精確度目的,執行計算以決定可得出線 性近似值的間隔(具有直線性的區段),藉此獲得如圖7中的 鏈線條所標示之像素電壓Vpixel與透射光電壓ντ的關係直 線(步驟S10)。依據前面所述,製作如圖8所示之用於表達 介於透射光強度L與像素,電壓Vpixel之間關係的資料表(步 驟S11),並且儲存至儲存區段35中,以此方式完成介於透 射光強度L與像素電壓Vpixel之間關係的測量。 接者’說明用於依據如圖6中流程圖所示之程序所決定之 介於透射光強度L與像素電壓Vpixel之間的關係,獲得像素 中寄生電容量與儲存電容量Cs相對於總電容量call的比 率。 先參考圖9來說明用於獲得閘極-源極寄生電容量cgs相 對於總電容量Call之比率的程序。 首先,CPU 34的電壓變化量測區段37設定用於驅動像素 -24· 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1221910 A7 ______B7_ 五、發明説明(21 ) 的驅動電壓及驅動波形(步驟S 12及S 13)。確切而言,例如 ,使顯示信號Vsig被設定為固定電壓Vsl,掃描信號Vgate 被設定為由同等於電壓Vgl的矩形脈衝及同等於電壓Vg3 的矩形脈衝所組成的信號,如圖11所示。另外,補償驅動 信號Vs被設定成為由固定電壓Vg3所組成的信號。請注意 ’電壓Vg3的值等於用於將開關元件12切換至off(關閉)狀 態的電壓值。 接著,電壓變化量測區段37設定測量條件(步驟S14)。此 處,在步驟S12及S13中設定的驅動波形之中,藉由將掃描 信號Vgate的電壓Vg3改變成複數種電壓所獲得的驅動波形 被設定為測量條件。 另外,電壓變化量測區段37設定起始驅動條件(步驟 S 1 5)。在此情況下,來自步驟s 14中設定之複數種測量條件 之一被選定當作驅動條件波形。 此外,電壓變化量測區段37藉由使用步驟S 1 5中設定的驅 動波形來執行像素驅動(步驟S16)’並且同時開始從光強度 偵測器5擷取資料(步驟S 17)。之後,終止驅動像素(步驟 S18),並且終止從光強度偵測器5擷取資料(步驟S19) ^在 此情況下,由於掃描信號Vgate包含同等於電壓Vgl的矩形 脈衝及同等於電壓Vg3 6¾矩形脈衝,所以從光強度偵測器5 擷取的資料分別相當於電壓Vgl及電壓Vg3。 接著,電壓變化量測區段37判斷藉由執行步驟Si7至S19 的測量是否當作最終測量條件(步驟S20)。由於本實例係在 起始驅動條件下測量的案例,所以此處程序進行至步驟S21 -25· 本紙張尺度適用巾S ®家標準(CNS) A4^(21G X 297公爱) ~ ' 1221910 A7k 1221910 A7 -------------- B7 V. Description of the invention (16)-Here, 'Vpixel indicates the actual voltage of the pixel electrode 13 when the switching element 12 is switched to the 0FF (closed) state, and Call indicates The total capacitance of the pixel is 'ie' (Cs + CLC + Cgs + Cis). Note that Clc indicates the capacitance of the liquid crystal cell between the pixel electrode 13 and the common electrode. In formula (1), since the target voltage Vsi and voltages Vgl, Vg2, Vg3, and Vs2 are known, if the pixel electrode voltage Vpixel can be measured, the respective parasitic capacitances or storage capacitances (^ relative to the total capacitance) should be obtained. The ratio of Call, that is, Cgs / Cal, Cs / Call, and Cis / CaU, for example, by individually changing the voltages Vg2, Vg3, and the target voltage Vsl, and by measuring in this case between the pixel voltage Vpixel and the target voltage Vs Changes in the potential difference between them. Incidentally, the construction of the display inspection device 1 as described above can supply a desired voltage to the scanning lines, the signal lines 10, and the common electrode on the liquid crystal cell substrate 2 and can measure the The light intensity on the liquid crystal cell substrate 2 in this case. Therefore, the pixel electrode 13 is fixed at a given voltage in advance and the light intensity corresponding to the pixel electrode 13 on the liquid crystal cell substrate 2 is measured. 1 can understand the relationship between the pixel voltage Vpixel and the light intensity. In addition, the voltage of the scan signal Vgate, the display signal Vsig, and the compensation drive signal will be changed, and In this case, the light intensity of the corresponding portion of the pixel electrode 13 changes, whereby the display inspection device 1 can detect the change in the pixel voltage Vpixel of each of the capacitances due to the parasitic capacitance or the storage capacitance Cs. Then, From the relationship between the voltage change of each supplied signal and the pixel voltage Vpixel change, the ratio of the respective parasitic capacitance or storage capacitance Cs to the total capacitance Call can be obtained. The following are specific examples of the contents described above. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1221910 A7 ____ B7 V. Description of the invention (17) Example of the graph shown in Figure 5 (where the vertical axis indicates time and the horizontal axis indicates light Intensity) is the time change of the light intensity when the display signal Vsig and the scanning signal Vgate are supplied to the pixel electrode 13 and the switching element 12 connected thereto. The scanning signal Vgate and display supplied in this case are shown below the figure The waveform of the signal Vsig. As shown in FIG. 5, when the scan signal vgate rises from the OFF state to the ON state and the display signal Vsig rises In the ON state, the light intensity of the relevant pixel will be temporarily increased (in the graph shown in Figure 5, the light intensity increase is indicated by a downward moving line.) After that, when the scanning signal Vgate is switched to OFF In the (off) state, the light intensity of the relevant pixel is decremented. In addition, when the display signal Vsig drops from the ON state to the OFF state, the light intensity of the relevant pixel is further decreased. Here, it is assumed that it has been measured in advance The relationship between the pixel voltage Vpixel and the light intensity is to reduce the light intensity before the scan signal Vgate to derive the pixel voltage VT1 of the pixel voltage 13 related to the condition, and to reduce the light intensity after the scan signal Vgate to derive the condition. The pixel voltage Vt2 of the associated pixel voltage 3. In addition, according to the aforementioned formula (1), it is estimated that the reduction amount of the pixel electrode Vti-\ ^ 2 when the scanning signal Vgate is reduced is related to the gate-source parasitic capacitance Cgs. Therefore, the ratio Cgs / Call of the gate-source parasitic valley Cgs to the total capacitance call can be calculated by dividing the reduction amount of the pixel electrode VT1-Vn by the scan signal Vgate when the scan signal Vgate is reduced. Amount of voltage change. Similarly, the ratio Cis / Call of the signal line-pixel electrode parasitic capacitance Cis to the total capacitance Call can be calculated by changing the pixel electrode Vpixel _______ -21-This paper is compliant with the National Standard for Finance (CNS) A4 specifications (21GX297 public 嫠) '______ A7 V. Invention ^ ρ—a · ~ In addition to the reduction of the display, 显, although the voltage reduction in the case of no signal Vsig is not shown in the figure. In addition, the electric power of the driving signal Vs =, ', but the amount of compensation to be supplied to the storage capacity line U, whereby the voltage can be changed, and the voltage change in this case can be measured. Relying on the ratio of the storage capacitance Cs to the total capacitance call ^,. L ^ By performing such measurements on each pixel, the distribution of the amount and storage capacitance CS can be measured. In addition, CL was obtained from Cal1 by using a value of 9, a median value, and the like. The actual value of parasitic capacitance and storage capacitance Cs can also be obtained. In the following, the actual operation of the display inspection device 丨 for performing the display inspection method (parasitic capacitance inspection method) according to the present invention will be explained. Fig. 6 shows a flowchart of a procedure for measuring the relationship between the pixel voltage and the transmitted light intensity at a pixel-related position on the liquid crystal cell substrate 2 by using the display inspection device 1. Here, the common electrode probe 22 is allowed to contact the common electrode, and the signal line probe 24 and the scanning line probe 23 are positioned so that the probe contacts the signal line corresponding to the pixel to be measured and scanned. Line 11. In addition, the light intensity detector 5 is arranged on the liquid crystal cell substrate 2 at a position corresponding to the pixel to be measured. Then, the voltage-luminescence relationship measurement section 36 in the CPU 34 of the control unit 8 starts measurement. In this case, the voltage-luminescence relationship measurement section 36 first sets a driving voltage for statically driving the pixel (step S1). In addition, the static driving represents an operation of supplying a given voltage to the pixel electrode 13 while maintaining the switching element 12 in an ON state. In other words', in step S1, a voltage to be supplied to the pixel electrode 13 is set. Please note that the voltage includes a plurality of voltages. Its phase -22- This paper size is suitable for SS Home Standard (CNS) A4 specifications x 1221910 A7 _ — —__ B7__ 5. The description of the invention (19) corresponds to the voltage level from the start to the final A plurality of given voltage levels are set step by step. In addition, the voltage-luminescence relationship measurement section 36 first sets a driving waveform for statically driving a pixel (step S2). The ' voltage-luminescence relationship measurement section 36 then drives the pixel and measures its light intensity. For the foregoing description, first set the initial voltage level from the voltage levels corresponding to the plurality of voltages set in step S2, so that the initial correlation of the pixels is displayed (step S3). Then, the voltage-luminescence relationship measurement section 36 controls the signal generator 21 to statically drive the pixel using the initial voltage level (step S4). That is, 'output a signal for changing the switching element 12 to ON state (on) to the scanning line 11' and supply a voltage for displaying the initial voltage level as set in step S3 to the signal line 10 in this case Next, a fixed voltage is supplied in advance to the electrode of the scanning line probe 23 that is in contact with the scanning line n, instead of being supplied to the scanning line 1 corresponding to the pixel to be measured for light intensity, so that the switching element 12 of the pixel is transformed 0FF (closed) state. In addition, a specific voltage is supplied in advance to the electrode of the signal line probe 24 that is in contact with the signal line 10, instead of being supplied to the signal line 10 corresponding to the pixel to be measured for light intensity, so that the light from the light source 6 Pixels related to the signal line 10 are not penetrated. Next, the voltage-luminescence relationship measurement section 36 measures the transmitted light intensity of the incident light intensity detector 5 through the liquid crystal cell substrate 2 according to a predetermined number of data, that is, the transmissive A / D converter. The voltage output from the circuit board 33 from the light intensity detector 5 (step S5). In addition, the average number of data is calculated to calculate a voltage corresponding to the intensity of transmitted light (step S6). Next, the voltage-luminescence relationship measurement section 36 judges whether the measurement performed in steps 84 to 86 corresponds to the maximum of the plurality of voltages set in step S1. -23- This paper size applies Chinese National Standard (CNS) A4 Specifications (210X 297 public reply) ------ 1221910 A7 B7 V. Description of the invention (20 final voltage level (step S7). Since this example is a case measured at the initial voltage level, it will be in step S8 + The subsequent voltage level to be measured is set, and the program returns to step S 4 ^ again to perform steps 34 to S7 for the complex voltage level, and when the measurement is completed using the final voltage level, the program proceeds to step S9. In step S9 The graph plots the transmitted light voltage related to the write voltage (pixel voltage Vpixel) supplied to the signal line 10. In other words, the results are plotted in the graph shown in FIG. 7 to explain the pixel voltage Vpixel and the transmitted light voltage The relationship between% can be obtained as shown in the relationship between the pixel voltage Vpixel and the transmitted light voltage VT shown in Figure 7. In addition, for the purpose of measurement accuracy, calculations are performed to determine the interval between which a linear approximation can be obtained. (Segment with linearity) to obtain a straight line between the pixel voltage Vpixel and the transmitted light voltage ντ as indicated by the chain lines in FIG. 7 (step S10). A data table for expressing the relationship between the transmitted light intensity L and the pixel and the voltage Vpixel (step S11), and stored in the storage section 35 to complete the intermediate between the transmitted light intensity L and the pixel voltage Vpixel Measurement of the relationship. The receiver's description is used to obtain the parasitic capacitance and the storage capacitance Cs in the pixel according to the relationship between the transmitted light intensity L and the pixel voltage Vpixel, which is determined according to the procedure shown in the flowchart in FIG. 6. Ratio to total capacitance call. First, a procedure for obtaining the ratio of the gate-source parasitic capacitance cgs to total capacitance Call will be described with reference to FIG. 9. First, the voltage change measurement section 37 of the CPU 34 Set for driving pixels-24. This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1221910 A7 ______B7_ V. Driving voltage and driving waveform of invention description (21) (steps S 12 and S 13 ) Specifically, for example, the display signal Vsig is set to a fixed voltage Vsl, and the scan signal Vgate is set to a signal composed of a rectangular pulse equal to the voltage Vgl and a rectangular pulse equal to the voltage Vg3, as shown in FIG. 11 In addition, the compensation driving signal Vs is set to a signal composed of a fixed voltage Vg3. Note that the value of the 'voltage Vg3 is equal to the voltage value for switching the switching element 12 to the off state. Next, the voltage change measurement The segment 37 sets measurement conditions (step S14). Here, among the driving waveforms set in steps S12 and S13, the driving waveform obtained by changing the voltage Vg3 of the scan signal Vgate to a plurality of voltages is set as a measurement condition. In addition, the voltage change measurement section 37 sets an initial driving condition (step S 1 5). In this case, one of a plurality of measurement conditions set from step s14 is selected as the driving condition waveform. Further, the voltage change measurement section 37 performs pixel driving by using the driving waveform set in step S15 (step S16) 'and simultaneously starts acquiring data from the light intensity detector 5 (step S17). After that, the driving of the pixels is terminated (step S18), and the data acquisition from the light intensity detector 5 is terminated (step S19). ^ In this case, since the scanning signal Vgate includes a rectangular pulse equal to the voltage Vgl and a voltage equal to Vg3 6¾ The rectangular pulses, so the data extracted from the light intensity detector 5 are equivalent to the voltage Vgl and the voltage Vg3, respectively. Next, the voltage change measurement section 37 judges whether the measurement by performing steps Si7 to S19 is regarded as the final measurement condition (step S20). Since this example is a case of measurement under initial driving conditions, the procedure here proceeds to steps S21 -25. This paper size is suitable for towels S ® Home Standard (CNS) A4 ^ (21G X 297 public love) ~ '1221910 A7
,其中在步驟S14中設定之緊接測量條件的後續測量條件被 選定當作像素驅動條件,並且程序再次回到步驟S16。 同樣地,針對在步驟S14中設定的所有測量條件重複步騾 S 16至S 19的程序,並且當在步驟S2〇中判斷一項測量條件是 最終測量條件時,則程序進行至步驟S22。在此情況下,請 注意,掃描信號Vgate之電壓Vg3的變化被設定為各自測^ 條件;因此,從光強度偵測器5擷取的資料將反映複數個電 壓Vg3〇 •.〜 在步驟S22 ’首先將關於各自測量條件變化量的透射光強 度變化量轉換成像素電壓Vpixel的變化量。即,依據步驟 S16至S19的測量,一個掃描信號Vgate&括複數種電壓(Vgl 及Vg3)。此處,兩種電壓Vgl& Vg3*別是用於將開關元件 12轉變成ON(開啟)狀態的電壓及用於將開關元件12轉變成 OFF(關閉)狀態的電壓。藉由掃描信號卩#“的電壓將電壓 Vgl偏移成電壓Vg3,使開^關元件12&〇N(開啟)狀態轉變成 off(關閉)狀態;同時,由於像素電極13上發生閘極·源極 寄生電容量Cgs而導致電壓變化。此類電壓變化被觀察為位 於相對應於液晶單元基板2上相關像素之位置上之透射光 的光強度變化。因此,此處為了計算寄生電容量比率,會 從光強度變化量回溯計算像素電極丨3上的電廢變化量。 確切而言’如圖10的下半部所示,首先依此假設:在測 量條件c 1、c2等等下,當掃描信號的電壓為Vg丨時,則透過 A/D轉換器電路板33從光強度偵測器5輸出的透射光電壓 被標示為VT1—el、VT1__C2等等;以及同樣地,當掃描信號 -26 - ^紙張尺度適用中國國家標準(CNS) A4規格(210X 297公复)~ ---^In which, the subsequent measurement conditions immediately after the measurement conditions set in step S14 are selected as the pixel driving conditions, and the program returns to step S16 again. Similarly, the procedures of steps S16 to S19 are repeated for all the measurement conditions set in step S14, and when it is judged in step S20 that one measurement condition is the final measurement condition, the program proceeds to step S22. In this case, please note that the change of the voltage Vg3 of the scanning signal Vgate is set to the respective measurement conditions; therefore, the data retrieved from the light intensity detector 5 will reflect the plurality of voltages Vg3. At step S22 'First, the amount of change in transmitted light intensity with respect to the amount of change in the respective measurement conditions is converted into the amount of change in the pixel voltage Vpixel. That is, according to the measurements in steps S16 to S19, one scan signal Vgate & includes a plurality of voltages (Vgl and Vg3). Here, the two voltages Vgl & Vg3 * are a voltage for changing the switching element 12 to an ON state and a voltage for changing the switching element 12 to an OFF state. The voltage Vgl is shifted to the voltage Vg3 by the voltage of the scan signal 卩 # ", so that the on-off element 12 & ON (on) state is changed to the off (off) state; at the same time, because a gate occurs on the pixel electrode 13 The source parasitic capacitance Cgs causes a voltage change. Such a voltage change is observed as a change in light intensity of transmitted light at a position corresponding to a relevant pixel on the liquid crystal cell substrate 2. Therefore, in order to calculate the parasitic capacitance ratio here , The amount of electrical waste change on the pixel electrode 3 will be calculated retrospectively from the change in light intensity. To be precise, as shown in the lower half of FIG. 10, first assume that: under the measurement conditions c 1, c2, etc., When the voltage of the scanning signal is Vg 丨, the transmitted light voltage output from the light intensity detector 5 through the A / D converter circuit board 33 is labeled as VT1-el, VT1__C2, etc .; and similarly, when the scanning signal is -26-^ Paper size is applicable to Chinese National Standard (CNS) A4 (210X 297 public copy) ~ --- ^
裝 irIr
1221910 A7 _ R7 五、發明説明(23 )1221910 A7 _ R7 V. Description of the invention (23)
Vgate的電壓為Vg2時,則透射光電壓輸出被標示為ντ2』 、Vt2—d等等。然後,依據每個測量條件ci、c2等等,參考 在步驟sn中獲得之介於透射光電壓ντ與像素電壓Vpixel 之間關係的資料表,獲得像素電壓的變化量,即以 |Vpixel-Vsl|表達之介於目標電壓vsl與實際像素電壓 Vpixel之間的電壓差。 圖10的左上部份顯示此類程序原理。圖中所示的v-T曲線 呈現介於透射光電壓VT與像素電壓Vpixel之間的關係,並 且在步驟S11製作資料表模型。在此情況下,為了在測量條 件cl下獲得電壓|Vpixel-Vsl|的變化量,在V-T曲線上獲得 像素電壓Vpixel及目標電壓Vs 1,以使這兩個電壓分別相當 於透射光電壓VT1—C1及VT2一a。並且就這一點而言計算 |Vpixel-Vsl|值。之後,針對測量條件^、c3等等,重複類 似於前面的程序。 接著,CPU 34的寄生電容量計算區段3 8結式標繪相對於 測量條件c卜c2等等之掃描信號Vgate之電壓| Vg 1 · Vg3丨變化 量的像素電壓|Vpixel-Vsl|的變化量(步驟S23)。換言之,假 設掃描信號Vgate的電壓|Vgl-Vg3|變化量被表達 成(delta)Vg-Cl、(delta)Vg-C2等等,如圖1〇的下半部所示 ,則此處會在圖10的右上部中標繪相對應於值(delta)Vg_cl 、(delta)Vg 一 C2等等的|Vpixel-Vsl|電壓量。在此方式中, 獲得如圖所示之介於|Vpixel-Vsl|與Vgl-Vg3之間的關係曲 線。 接著’針對以此方式獲得之介於|Vpixel-Vsl丨與Vgl-Vg3 -27- ^紙張尺度適财g ®家標準(CNS) A视格(210 X 297公釐) "~ 1221910 五、發明説明(24 ) (間的關係曲線來計算線性近似值間隔La(步驟s24)。這歸 因於以下事實:液晶的電容率通常會因反轉狀態而改變, 並且液晶的電容量會依據像素電位變化而改變。因此,口 有供應至寄生電容量的電壓係在特^範圍内改變時,前面 提及的公式⑴才會生效》換言之,為了藉由使用前面提及 的公式⑴來獲得介於閘極-源極寄生電容量Cgs相對於總電 容量Cali的比率Cgs/CaU,需要獲得介於|Vpixe丨·Vsi |與 Vgl-Vg3之.閉·的關係呈現直線性的區域。基於此原因,在 本具體實施例中’從在步驟S23中獲得之丨Vpixel_Vsi丨與 Vgl-Vg3的關係曲線來尋找線性近似值間隔La。 之後,寄生電谷量計算區段3 8藉由使用線性近似值間隔 La的斜率來計算閘極_源極寄生電容量Cgs相對於總電容量When the voltage of Vgate is Vg2, the transmitted light voltage output is marked as ντ2 ″, Vt2—d, and so on. Then, according to each measurement condition ci, c2, etc., referring to the data table between the transmitted light voltage ντ and the pixel voltage Vpixel obtained in step sn, obtain the change amount of the pixel voltage, that is, | Vpixel-Vsl | Expressed as the voltage difference between the target voltage vsl and the actual pixel voltage Vpixel. The upper left part of Figure 10 shows the principle of such a program. The v-T curve shown in the figure shows the relationship between the transmitted light voltage VT and the pixel voltage Vpixel, and a data table model is made in step S11. In this case, in order to obtain the variation of the voltage | Vpixel-Vsl | under the measurement condition cl, the pixel voltage Vpixel and the target voltage Vs 1 are obtained on the VT curve, so that these two voltages are equivalent to the transmitted light voltage VT1— C1 and VT2 a. And the | Vpixel-Vsl | value is calculated at this point. After that, for the measurement conditions ^, c3, etc., the procedure similar to the previous one is repeated. Next, the parasitic capacitance calculation section 38 of the CPU 34 plots the voltage of the scanning signal Vgate with respect to the measurement conditions c, c2, etc. | Vg 1 · Vg3 丨 the change in the pixel voltage | Vpixel-Vsl | Amount (step S23). In other words, assuming that the voltage | Vgl-Vg3 | of the scanning signal Vgate is expressed as (delta) Vg-Cl, (delta) Vg-C2, etc., as shown in the lower half of FIG. The amount of | Vpixel-Vsl | corresponding to the values (delta) Vg_cl, (delta) Vg_C2, etc. are plotted in the upper right of FIG. In this way, the relationship curve between | Vpixel-Vsl | and Vgl-Vg3 is obtained as shown in the figure. Then 'for the pixel obtained in this way between Vpixel-Vsl 丨 and Vgl-Vg3 -27- ^ paper size suitable financial standard (CNS) A vision grid (210 X 297 mm) " ~ 1221910 five, Description of the invention (24) The relationship curve between (to calculate the linear approximation interval La (step s24). This is due to the fact that the permittivity of the liquid crystal usually changes due to the inversion state, and the capacitance of the liquid crystal depends on the pixel potential Therefore, when the voltage supplied to the parasitic capacitance changes within the special range, the aforementioned formula ⑴ will take effect. In other words, in order to obtain The ratio Cgs / CaU of the gate-source parasitic capacitance Cgs to the total capacitance Cali needs to obtain a region where the closed relationship between | Vpixe 丨 · Vsi | and Vgl-Vg3 shows a linearity. For this reason In this specific embodiment, the linear approximation interval La is found from the relationship curve between Vpixel_Vsi and Vgl-Vg3 obtained in step S23. After that, the parasitic electrical valley calculation section 38 uses the linear approximation interval La Slope to calculate gate_source A parasitic capacitance with respect to the total capacitance Cgs
Call的比率Cgs/Call(步驟S25),並且將結果儲存至儲存區段 35中(步驟S26)。 雖然則面說明用於獲得閘極_源極寄生電容量cgs相對於 總電容量Call之比率的程序,但是以上將參考圖9來說明用 於獲彳于k號線-像素電極寄生電容量Cis的程序。首先,類 似於獲得閘極-源極寄生電容量Cgs相對於總電容量Call之 比率的案例,CPU 34的電壓變化量測區段37設定用於驅動 像素的驅動電壓及驅動波形(步驟S12及s 13)。在此情況下 ’例如圖12所示,掃描信號Vgate被設定為在特定週期中其 電壓從Vg3上升至Vgl的矩形脈波,並且顯示信號vsig被設 定為由電壓Vs2與Vsl所組成且週期短於掃描信號Vgate週 期的矩形脈波。另外,補償驅動信號Vs被設定成為由固定 -28 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1221910 A7 __B7_ 五、發明説明(25 ) 電壓Vg3所組成的信號。如上文所述,電壓Vg3的值等於用 於將開關元件12切換至OFF(關閉)狀態的電壓值。 接著,電壓變化量測區段37設定測量條件(步驟s 14)。此 處,顯示信號Vsig之Vsl位準變化的複數種驅動波形被設定 為測量條件。 另外,電壓變化量測區段37設定起始驅動條件(步驟 S 15)。在此情況下,來自步驟S14中設定之複數種驅動波形 之一被指定。- 之後,電壓變化量測區段37藉由使用步驟S15中指定的驅 動波形來執行像素驅動(步驟S 16),並且同時開始從光強度 偵測器5擷取資料(步驟S 17)。此處,在掃描信號Vgate從電 壓Vgl下降至Vg3之後,開關元件12被轉變成OFF(關閉)狀 態,藉此像素電壓Vpixel會按照顯示信號Vsig的電壓(Vsl 和Vs2)變化而改變。因此,將執行關於相對應於像素電壓 Vpixel變化之像素之透射.光強度變化的測量。 之後,終止驅動像素(步驟S 1 8),並且終止從光強度偵測 器5擷取資料(步驟S19)。 接著,電壓變化量測區段37判斷藉由執行步驟S17至S19 的測量是否當作最終測量條件(步驟S2〇)。由於本實例係在 起始驅動條件下測量的案例,所以此處程序進行至步驟S21 ’其中在步驟S14中設定之緊接測量條件的後續測量條件被 選定當作像素驅動條件,並且程序再次回到步驟S 16。 同樣地,針對在步驟S14中設定的所有測量條件重複步驟 S 16至S 19的程序,並且當在步驟S20中判斷測量條件是最終 -29 -_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1221910 ·Α7 ------- Β7__ 五、發明説明(26 ) 測量條件時,則程序進行至步驟S22。在此情況下,請注意 ’顯示信號Vsig之電壓Vsl的變化被設定為各自測量條件; 因此’從光強度偵測器5擷取的資料將反映複數個電壓 Vsl 〇 在步驟S22,將關於各自測量條件變化量的透射光強度變 化量轉換成像素電壓Vpixel的變化量。此處使用類似於計 算閘極-源極寄生電容量Cgs相對於總電容量Call之比率之 案例的程序α即,在特定測量條件下,將開關元件丨2轉變 成off(關閉)狀態之後,隨即依據顯示信號Vsi^々電壓從 Vsl偏移成Vs2以將透射光電壓從Vti_c1偏移成Vt2_c2(當掃 描信號Vgate是Vg3時)的情況下,會參考在步驟S11獲得之 透射光電壓VT與像素電壓Vpixel的資料表來獲得相對應於 此類偏移的|Vpixel-Vsl|。之後,還針對其他測量條件來重 複類似於前面的程序。 接著’依據各自測量條件,CPU 34的寄生電容量計算區 段38結式標繪相對於顯示信號Vsig之電壓|Vsl-Vs2|變化量 的像素電壓|Vpixel_Vsl|變化量(步驟S23)。這同等於將圖1〇 的右上部中顯示的電壓變化量從|VgHg3|變換至 |Vsl-Vs2|。藉此獲得介於|Vpixel-Vsl|與Vsl-Vs2之間的關 係曲線。 接奢’針對以此方式獲得之介於|Vpixei-Vsl|與Vsl-Vs2 之間的關係曲線來計算線性近似值(步驟S24)。之後,寄生 電容量計算區段3 8藉由使用線性近似值的斜率來計算信號 線-像素電極寄生電容量Cis相對於總電容量cau的比率 •30- 本紙張尺度適财Η @家標準(CNS) A4規格(21G X 297公董)' - 1221910The ratio of Call is Cgs / Call (step S25), and the result is stored in the storage section 35 (step S26). Although the procedure for obtaining the ratio of the gate-source parasitic capacitance cgs to the total capacitance Call is explained, the above will be described with reference to FIG. 9 for obtaining the parasitic capacitance Cis of the k-line-pixel electrode. program of. First, similarly to the case of obtaining the ratio of the gate-source parasitic capacitance Cgs to the total capacitance Call, the voltage change measurement section 37 of the CPU 34 sets the driving voltage and driving waveform for driving the pixels (steps S12 and s 13). In this case, for example, as shown in FIG. 12, the scan signal Vgate is set to a rectangular pulse whose voltage rises from Vg3 to Vgl in a specific period, and the display signal vsig is set to be composed of the voltages Vs2 and Vsl with a short period A rectangular pulse wave for the period of the scan signal Vgate. In addition, the compensation drive signal Vs is set to a signal composed of a fixed voltage -28-this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1221910 A7 __B7_ V. Description of the invention (25) Voltage Vg3. As described above, the value of the voltage Vg3 is equal to the voltage value for switching the switching element 12 to the OFF state. Next, the voltage change measurement section 37 sets measurement conditions (step s 14). Here, a plurality of driving waveforms in which the Vsl level of the display signal Vsig changes is set as a measurement condition. In addition, the voltage change measurement section 37 sets an initial driving condition (step S15). In this case, one of the plurality of driving waveforms set from step S14 is specified. -After that, the voltage change measurement section 37 performs pixel driving by using the driving waveform specified in step S15 (step S16), and simultaneously starts acquiring data from the light intensity detector 5 (step S17). Here, after the scan signal Vgate drops from the voltage Vgl to Vg3, the switching element 12 is turned to the OFF state, whereby the pixel voltage Vpixel changes in accordance with the voltages (Vsl and Vs2) of the display signal Vsig. Therefore, the measurement of the change in transmission and light intensity of a pixel corresponding to a change in the pixel voltage Vpixel will be performed. After that, the driving of the pixels is terminated (step S 1 8), and the data acquisition from the light intensity detector 5 is terminated (step S19). Next, the voltage change measurement section 37 judges whether or not the measurement by performing steps S17 to S19 is regarded as a final measurement condition (step S20). Since this example is a case of measurement under initial driving conditions, the procedure here proceeds to step S21 ', where the subsequent measurement conditions immediately after the measurement conditions set in step S14 are selected as the pixel driving conditions, and the program returns again Go to step S16. Similarly, the procedures of steps S 16 to S 19 are repeated for all the measurement conditions set in step S14, and when it is judged that the measurement conditions are final in step S20-29-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1221910 · A7 ------- Β7__ 5. Description of the invention (26) When measuring conditions, the program proceeds to step S22. In this case, please note that 'the change of the voltage Vsl of the display signal Vsig is set to the respective measurement conditions; therefore,' the data retrieved from the light intensity detector 5 will reflect the plurality of voltages Vsl. In step S22, The amount of change in transmitted light intensity of the measurement condition change amount is converted into a change amount of the pixel voltage Vpixel. Here, a program similar to the case of calculating the ratio of the gate-source parasitic capacitance Cgs to the total capacitance Call is used. That is, after switching the switching element 丨 2 to an off state under a specific measurement condition, Then, according to the display signal Vsi ^ 々 voltage shifted from Vsl to Vs2 to shift the transmitted light voltage from Vti_c1 to Vt2_c2 (when the scan signal Vgate is Vg3), reference will be made to the transmitted light voltage VT obtained in step S11 and Table of pixel voltage Vpixel to get | Vpixel-Vsl | corresponding to this offset. After that, the procedure similar to the previous one is repeated for other measurement conditions. Next, according to the respective measurement conditions, the parasitic capacitance calculation section 38 of the CPU 34 plots the pixel voltage | Vpixel_Vsl | with respect to the change amount of the voltage | Vsl-Vs2 | of the display signal Vsig | step amount (step S23). This is equivalent to transforming the amount of voltage change shown in the upper right of FIG. 10 from | VgHg3 | to | Vsl-Vs2 |. In this way, a relationship curve between | Vpixel-Vsl | and Vsl-Vs2 is obtained. Jie Xia 'calculates a linear approximation for the relationship curve between | Vpixei-Vsl | and Vsl-Vs2 obtained in this way (step S24). After that, the parasitic capacitance calculation section 38 calculates the ratio of the signal line-pixel electrode parasitic capacitance Cis to the total capacitance cau by using a slope of a linear approximation. 30- This paper is suitable for financial standards @ 家 标准 (CNS ) A4 size (21G X 297 public director) '-1221910
Cis/Call(步驟S25),並且將結果儲存至儲存區段^中(步騾 S26) 〇 接著,參考圖9以說明用於獲得儲存電容量Cs的程序。首 先,類似於獲得閘極··源極寄生電容量^以或信號線—像素電 極寄生電容量Cis相對於總電容量^丨丨之比率的案例,cpu 34的電壓變化量測區段37設定用於驅動像素的驅動電壓及 驅動波形(步驟S 12及S 13)。確切而言,例如圖13所示,使 顯示信號Vstg被設定為固定電壓信號Vsl,掃描信號Vgate 被设定為在特定週期中其電壓從Vg3上升至Vgl的矩形脈 波。另外,補償驅動信號Vs被設定為由電壓Vg2與Vg3所組 成且週期短於掃描信號Vgate週期的矩形脈衝。如上文所述 ’電壓Vg3的值等於用於將開關元件12切換至〇ff(關閉)狀 態的電壓值。 接著,電壓變化量測區段37設定測量條件(步驟s 14)。此 處’只有來自補償驅動信號Vs之Vg2值的複數種驅動波形 被設定為測量條件。 另外,電壓變化量測區段37設定起始驅動條件(步驟 S15)。在此情況下,來自步驟S14中設定之複數種驅動波形 之一被指定。 之後,電壓變化量測區段37藉由使用步驟S12和S 13中設 定的和步驟S 1 5中設定的補償驅動信號Vs的掃描信號Vgate 和顯示信號Vsig來執行像素驅動(步驟S16),並且同時開始 從光強度偵測器5擷取資料(步驟S 17)。此處,在掃描信號 Vgate從電壓Vgl下降至Vg3之後,開關元件12被轉變成 -31 -本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1221910Cis / Call (step S25), and the result is stored in the storage section ^ (step S26). Next, a procedure for obtaining the storage capacity Cs will be described with reference to FIG. 9. First, similar to the case of obtaining the gate · source parasitic capacitance ^ or the ratio of the signal line-pixel electrode parasitic capacitance Cis to the total capacitance ^ 丨 丨, the voltage change measurement section 37 of the CPU 34 is set A driving voltage and a driving waveform for driving the pixels (steps S 12 and S 13). Specifically, for example, as shown in FIG. 13, the display signal Vstg is set to a fixed voltage signal Vsl, and the scan signal Vgate is set to a rectangular pulse whose voltage rises from Vg3 to Vgl in a specific period. In addition, the compensation driving signal Vs is set as a rectangular pulse composed of the voltages Vg2 and Vg3 and the period is shorter than the period of the scan signal Vgate. As described above, the value of the voltage Vg3 is equal to the voltage value for switching the switching element 12 to the OFF state. Next, the voltage change measurement section 37 sets measurement conditions (step s 14). Here, only a plurality of types of driving waveforms from the Vg2 value of the compensation driving signal Vs are set as the measurement conditions. In addition, the voltage change measurement section 37 sets an initial driving condition (step S15). In this case, one of the plurality of driving waveforms set from step S14 is specified. After that, the voltage change measurement section 37 performs pixel driving by using the scan signal Vgate and the display signal Vsig of the compensation driving signal Vs set in steps S12 and S 13 and the step S 1 5 (step S16), and At the same time, data acquisition from the light intensity detector 5 is started (step S 17). Here, after the scanning signal Vgate drops from the voltage Vgl to Vg3, the switching element 12 is transformed into -31-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1221910
OFF(關閉)狀態,藉此像素電-Vpixei會按照補償驅動信號 Vs的電壓(Vg2*Vg3)變化而改變。因此,將執行關於相對 應於像素電壓Vpixel變化之像素之透射光強度變化的測 量。 之後,終止驅動像素(步驟S18),並且終止從光強度偵測 器5擷取資料(步驟S19p 接著,電壓變化量測區段3 7判斷藉由執行步驟s丨7至s ! 9 的測量是否當作最終測量條件(步驟S2〇)。由於本實例係在 起始驅動條件下測量的案例,所以此處程序進行至步驟S2 1 ,其中在步驟S14中設定之緊接測量條件的後續測量條件被 選定當作像素驅動條件,並且程序再次回到步驟s丨6。 同樣地,針對在步驟S14中設定的所有測量條件重複步驟 S 16至S 19的程序’並且當在步驟S2〇中判斷測量條件是最終 測量條件時’則程序進行至步驟S22。在此情況下,請注意 ’補彳貝驅動信號Vs之電壓Vg2的變化被設定為各自測量條 件;因此,從光強度偵測器5擷取的資料將反映複數個電壓 Vg2的變化。 在步驟S22 ’將關於各自測量條件變化量的透射光強度變 化量轉換成像素電壓Vpixel的變化量。此處使用類似於計 算閘極-源極寄生電容量Cgs和信號線-像素電極寄生電容 量Cis相對於總電容量〇^11之比率之案例的程序。即,在 特定測量條件下,將開關元件12轉變成0FF(關閉)狀態之後 ,隨即依據補償驅動信號的電壓從Vg2偏移成Vg3以將透射 光電壓VT從VT1_cl偏移成VT2_c2(當掃描信號Vgate是Vg3 __- 32 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)OFF state, whereby the pixel voltage -Vpixei changes according to the voltage (Vg2 * Vg3) of the compensation drive signal Vs. Therefore, a measurement will be performed on the change in transmitted light intensity of a pixel corresponding to a change in the pixel voltage Vpixel. After that, the driving of the pixels is terminated (step S18), and the data acquisition from the light intensity detector 5 is terminated (step S19p. Then, the voltage change measurement section 37 determines whether or not the measurement is performed by performing steps s7 to s! 9. As the final measurement condition (step S2〇). Since this example is a case of measurement under the initial driving condition, the procedure here proceeds to step S2 1, where the subsequent measurement conditions immediately following the measurement condition set in step S14 Is selected as the pixel driving condition, and the program returns to step s6 again. Similarly, the procedures of steps S16 to S19 are repeated for all the measurement conditions set in step S14 'and when the measurement is judged in step S20 When the condition is the final measurement condition, the program proceeds to step S22. In this case, please note that the change of the voltage Vg2 of the driving signal Vs is set as the respective measurement condition; therefore, it is extracted from the light intensity detector 5 The data obtained will reflect the changes in the plurality of voltages Vg2. In step S22 ', the transmitted light intensity changes with respect to the changes in the respective measurement conditions are converted into changes in the pixel voltage Vpixel. A procedure similar to the case of calculating the ratio of the gate-source parasitic capacitance Cgs and the signal line-pixel electrode parasitic capacitance Cis to the total capacitance ^ 11 is used. That is, under specific measurement conditions, the switching element 12 After turning to the 0FF (closed) state, the voltage of the compensation drive signal is shifted from Vg2 to Vg3 to shift the transmitted light voltage VT from VT1_cl to VT2_c2 (when the scan signal Vgate is Vg3 __- 32-This paper is for China National Standard (CNS) A4 specification (210X297 mm)
裝 ilHold il
線 1221910 A7 ---— _B7__ 五、發明説明(29 ) 時)的情況下,會參考在步驟S11獲得之透射光電壓ντ與像 素電壓Vpixel的資料表來獲得相對應於此類偏移的 IVpixel-Vsl卜之後,還針對其他測量條件來重複類似於前 面的程序。 接著’依據各自測量條件,CPU 34的寄生電容量計算區 & 38結式標输相對於補償驅動信號Vs之電壓|Vg2_Vg3丨變 化量的像素電壓|Vpixel-Vsl|變化量(步驟S23)。這同等於將 圖1〇的右-上-部中顯示的電壓變化量從|Vg1-Vg3|變換至 |Vg2-Vg3|。藉此獲得介於|Vpixei_Vsl|與Vg2-Vg3之間的關 係曲線。 接著,針對以此方式獲得之介於|Vpixel-Vsl丨與Vg2-Vg3 之間的關係曲線來計算線性近似值間隔(步驟S24)。之後, 寄生電容量計算區段38藉由使用線性近似值間隔的斜率來 計算儲存電容量Cs相對於總電容量Call的比率Cs/Call(步 驟S25),並且將結果儲务至儲存區段35中(步驟S26)。 另外,藉由改變信號線探針24及掃描線探針23的位置以 針對每個像素來執行如上文所述的測量,就可調整螢幕上 寄生電容量或儲存電容量Cs的分佈等等;以及此類資訊可 用來最佳化面板設計或顯示缺陷的因果分析。另外,藉由 特定裝置來調整介於像素電極13與共同電極之間的電容量 CLc,也可計算各自寄生電容量的實際值。 如上文所述,本具體實施例的顯示檢查裝置1包括:信號 供應器4,用以將要供應的電壓信號輸出至像素電極13; — 光強度偵測器5,其能夠偵測位於相對應於液晶單元基板2 -33 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1221910 A7 B7 五、發明説明(3〇 ) 上之像素電極13之部位上的光強度;以及cpu 14。並且在 顯示檢查裝置1中,CPU 34具有以下功能:測量介於靜態驅 動後之像素電壓Vpixel與相對應於液晶單元基板2上相對 應部位之透射光光強度(透射光電壓VT)之間的關係。計算 ^充連像素電極13時’從像素中透射光的強度變化以從目 ‘電壓Vsl來計算像素電壓Vpixel的變化量;以及依據此類 變化量來計算寄生電容量相對於總電容量的比率。由於可 從像素電極Vpixel變化量來計算寄生電容量相對於總電容 量Call的比率,所以可使用計算結果來最佳化面板設計或 簡化顯示缺陷的因果分析。 具體而言,由於信號供應器4被設計,以便能夠調整用於 控制開關元件12之掃描信號Vgate的OFF(關閉)狀態位準, 所以可藉由調整OFF(關閉)狀態中之掃描信號Vgate的電壓 位準來改變供應至閘極-源極寄生電容量的電壓。因此,可 理解與相對應於供應電壓之電容率變化相關之閘極_源極 寄生電谷量Cgs的特性變化,因而能夠更精確測量。 另外,由於信號供應器4被設計,以便能夠調整要供應至 配備於像素電極13四周之掃描線丨丨的電壓(其中會將掃描 仏號Vgate供應至像素電極13),則在測量掃描信號Vgate的 電壓變化時,可防止配備於像素電極13四周之其他掃描線 Π的電場影響。另外,由於信號供應器4被設計,藉此能夠 同時將仏號供應至儲存電容量線1 8,所以很容易測量儲存 電容量Cs相對於總電容量(:州的比率。 另外,由於信號供應器4被設計,以便能夠控制顯示信號Line 1221910 A7 ----- _B7__ 5. In the case of the description of the invention (29)), the data table of the transmitted light voltage ντ and the pixel voltage Vpixel obtained in step S11 will be referred to obtain the IVpixel corresponding to such offset. -Vsl After repeating the procedure similar to the previous for other measurement conditions. Next, according to the respective measurement conditions, the parasitic capacitance calculation area of the CPU 34 & 38 junction type inputs the pixel voltage | Vpixel-Vsl | with respect to the change amount of the voltage | Vg2_Vg3 of the compensation drive signal Vs (step S23). This is equivalent to transforming the amount of voltage change shown in the right-upper-part of Fig. 10 from | Vg1-Vg3 | to | Vg2-Vg3 |. This obtains the relationship curve between | Vpixei_Vsl | and Vg2-Vg3. Next, a linear approximation interval is calculated for the relationship curve between | Vpixel-Vsl 丨 and Vg2-Vg3 obtained in this way (step S24). After that, the parasitic capacitance calculation section 38 calculates the ratio Cs / Call of the storage capacitance Cs to the total capacitance Call by using a slope of a linear approximation interval (step S25), and stores the result in the storage section 35. (Step S26). In addition, by changing the positions of the signal line probe 24 and the scanning line probe 23 to perform the measurement as described above for each pixel, the parasitic capacitance on the screen or the distribution of the storage capacitance Cs can be adjusted, etc .; And this information can be used to optimize panel design or cause and effect analysis of display defects. In addition, by adjusting the capacitance CLc between the pixel electrode 13 and the common electrode by a specific device, the actual values of the respective parasitic capacitances can also be calculated. As described above, the display inspection device 1 of this embodiment includes: a signal supplier 4 for outputting a voltage signal to be supplied to the pixel electrode 13; — a light intensity detector 5 capable of detecting the location corresponding to Liquid crystal cell substrate 2 -33-This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 1221910 A7 B7 V. Light intensity on the part of the pixel electrode 13 on the description of the invention (30); and cpu 14. And in the display inspection device 1, the CPU 34 has the function of measuring the pixel voltage Vpixel between static driving and the transmitted light intensity (transmitted light voltage VT) corresponding to a corresponding portion on the liquid crystal cell substrate 2 relationship. Calculate the change in the intensity of transmitted light from the pixel when the pixel electrode 13 is charged to calculate the change in pixel voltage Vpixel from the target voltage Vsl; and calculate the ratio of the parasitic capacitance to the total capacitance based on this change . Since the ratio of the parasitic capacitance to the total capacitance Call can be calculated from the amount of change in the pixel electrode Vpixel, the calculation results can be used to optimize the panel design or simplify the cause and effect analysis of display defects. Specifically, since the signal supplier 4 is designed so as to be able to adjust the OFF state level of the scanning signal Vgate for controlling the switching element 12, the scanning signal Vgate in the OFF state can be adjusted by adjusting the The voltage level changes the voltage supplied to the gate-source parasitic capacitance. Therefore, it can be understood that the characteristics of the gate-source parasitic valley value Cgs related to the change in permittivity corresponding to the supply voltage can be measured more accurately. In addition, since the signal supply 4 is designed so as to be able to adjust the voltage to be supplied to the scanning lines provided around the pixel electrode 13 (where the scan signal Vgate is supplied to the pixel electrode 13), the scanning signal Vgate is measured When the voltage is changed, the influence of the electric field of other scanning lines Π provided around the pixel electrode 13 can be prevented. In addition, since the signal supplier 4 is designed so that it can simultaneously supply the 仏 number to the storage capacity line 18, it is easy to measure the ratio of the storage capacity Cs to the total capacity (: state. In addition, due to the signal supply Device 4 is designed to be able to control the display signal
1221910 A7 _____B7___ 五、發明説明(31 )1221910 A7 _____B7___ 5. Description of the invention (31)
Vsig的ΟΝ/OFF(開/關)操作,所以可測量介於信號線1〇與像 素電極13之間的寄生電容量。 另外,由於CPU 34的電壓-發光性關係量測區段36被設計 ,以便能夠找出介於像素電壓Vpixel與透射光強度(透射光 電壓Vt)之間關係呈現直線性的區段,所以可精確獲得此類 關係’而不會有測量錯誤影響。另外,由於CPU 34的寄生 電容量計算區段3 8被設計,以便能夠找出介於掃描信號 Vgate的電壓〜變化與像素電壓Vpixel的電壓變化之間關係 呈現直線性的區段,所以可精確獲得此類關係,而不會有 測量錯誤影響。具體而言,可排除歸因於不同電壓供應所 導致的液晶電容率變化的測量錯誤。 此外,根據本發明顯示器檢查方法及寄生電容量檢查方 法,會預先測量位於以給定電壓充電之像素上的透射光強 度’以及針對個別改變位於所要檢查之像素電極丨3四周佈 線電壓來測1透射光強度變化,因此能夠個別測量像素電 極13及介於各自掃描線n與信號線1〇之間形成的寄生電容 量。 具體而言在此情況下,會位以給定電壓充電像素電極13 的狀態下當改變供應至信號線1〇的電壓時測量像素的透射 光強度,因此足以測量介於像素電極丨3與信號線丨〇之間的 寄生電容量特性,其相對應於所供應的電壓。 此外,由於可測量儲存電容量Cs相對於總電容量的比率 ,所以可精確測量非寄生電容量之部位相對於總電容量的 比率。 -35- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1221910 A7 ---------B7 五、發明説明(32 ) 雖然前面已說明本發明-項具體實施例,但是應明白本 發明不限定於前述具體實施例,而是如必要話可採用各種 其他建構。 例如,就測量透射光強度以計算寄生電容量比率而言, 要供應至掃描線11、信號線10或儲存電容量線18的信號不 限疋於圖11至13所不的信號,例如,也可應用圖14所示的 波形。 圖14所示的仏號波形疋一種由被定義為固定電壓vs2的 顯示信號Vsig與被定義為固定電壓Vg3的補償驅動信號% 由矩形脈波所組成的波形,而掃描信號Vgate會在從Vgi 至Vg3的範圍内逐漸變更其位準。 在此情況下,在如圖9所示的程序中,會在步驟S12和su 中設定如圖14所示的波形,並且在步驟S14中只會將如圖14 所示之波形的一種波形設定為測量條件。然後,執行步驟 S15至S19。在後績步驟S20中,由於測量條件僅一種類型, 所以程序從步驟S20進行到S22,並且執行後續步驟。 如圖14所示,由於測量條件包括複數個不同位準矩形脈 衝’所以不一定會重複從步驟S16至S 19的程序,但是一巡 迴私序實行以不同位準的掃描信號Vgate來測量像素透射 光強度變化。在此方法中,可縮短處理時間。 另外,就介於鄰接信號線10,(其鄰接於相對應於像素電極 13之信號線1〇)與像素電極13間之寄生電容量cis相對於總 電容量的比率不可被忽略而言(請參閱圖2),可按照與如具 體實施例中所說明之測量信號線-像素電極寄生電容量c η _ -36- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 1221910 A7 _______B7 五、發明説明(33 ) 相對於總電容量Call之比率的程序大致相同的程序,來計 算鄰接信號線-像素電極寄生電容量cis相對於總電容量 Call之比率。 明確的說’在顯示器檢查裝置1中,信號線探針24也可將 包壓仏號供應至配備於要供應顯示信號^。之該處之像素 電極13四周的信號線10。因此,可在改變要供應至鄰接信 號線10’之顯示信號Vsig,的位準時測量相對應像素的光強 ,變化,藉此可按照類似於如上文所述之計算信號線·像素 電極寄生電容量Cis相對於總電容量CaU之比率的程序,來 計算鄰接信號線-像素電極寄生電容量Cis相對於總電容量 C a 11的比率。 確切而言,根據如下文所述之具體實施例中計算信號線· 像素電極寄生電容量cis相對於總電容量的比率,會在步驟 S12和S13中將顯示信號Vsig定義為固定電壓Vsi,二不是定 義為如圖12所示的波形,,並且會將供應至鄰接信號線ι〇,的 顯示信號Vsig,設定為如圖12所示之Vsig一樣的波形。另外 ,在步驟S 14中將包含複數種Vs丨位準變化的驅動波形設定 為測量條件。然後,可按照類似於如上文所述之具體實施 例中計算信號線-像素電極寄生電容量Cis相對於總電容量 Call之比率的程序,來計算鄰接信號線·像素電極寄生電容 量Cis相對於總電容量Call的比率。 此時,液晶顯示器之顯示幕區段的液晶單元基板2被當作 上文所述之具體實施例中檢查的主體。但是,不受限於前 文所述還可執行檢查發光二極體、電漿顯示器、場致發Vsig's ON / OFF operation enables measurement of parasitic capacitance between the signal line 10 and the pixel electrode 13. In addition, since the voltage-luminescence relationship measurement section 36 of the CPU 34 is designed so as to find a section in which the relationship between the pixel voltage Vpixel and the transmitted light intensity (transmitted light voltage Vt) is linear, it is possible to Accurately obtain such relationships' without the impact of measurement errors. In addition, since the parasitic capacitance calculation section 38 of the CPU 34 is designed so as to be able to find a section in which the relationship between the voltage of the scan signal Vgate and the change in the voltage of the pixel voltage Vpixel is linear, it is accurate Get such relationships without the impact of measurement errors. Specifically, measurement errors due to changes in liquid crystal permittivity due to different voltage supplies can be ruled out. In addition, according to the display inspection method and the parasitic capacitance inspection method of the present invention, the transmitted light intensity 'located on a pixel charged with a given voltage is measured in advance, and the wiring voltage around the pixel electrode to be inspected is changed for individual changes. The transmitted light intensity changes, so that the pixel electrodes 13 and the parasitic capacitances formed between the respective scanning lines n and the signal lines 10 can be individually measured. Specifically, in this case, the transmitted light intensity of the pixel is measured when the voltage supplied to the signal line 10 is changed while the pixel electrode 13 is charged at a given voltage, so it is sufficient to measure the signal between the pixel electrode 3 and the signal. The parasitic capacitance characteristic between the lines 丨 0 corresponds to the voltage supplied. In addition, since the ratio of the storage capacitance Cs to the total capacitance can be measured, the ratio of the non-parasitic capacitance portion to the total capacitance can be accurately measured. -35- This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) 1221910 A7 --------- B7 V. Description of the invention (32) Although the invention has been described in the foregoing as a specific implementation Examples, but it should be understood that the present invention is not limited to the foregoing specific embodiments, but various other configurations may be adopted if necessary. For example, in terms of measuring the transmitted light intensity to calculate the parasitic capacitance ratio, the signals to be supplied to the scanning line 11, the signal line 10, or the storage capacitance line 18 are not limited to the signals shown in FIGS. 11 to 13, for example, also The waveform shown in FIG. 14 can be applied. The 仏 number waveform shown in FIG. 14 is a waveform composed of a display signal Vsig defined as a fixed voltage vs2 and a compensation drive signal defined as a fixed voltage Vg3. The waveform is composed of a rectangular pulse wave, and the scan signal Vgate is changed from Vgi The level is gradually changed from Vg3. In this case, in the program shown in FIG. 9, the waveform shown in FIG. 14 is set in steps S12 and su, and in step S14, only one type of waveform shown in FIG. 14 is set. Is the measurement condition. Then, steps S15 to S19 are executed. In the after-performance step S20, since the measurement conditions are only one type, the program proceeds from step S20 to S22, and the subsequent steps are performed. As shown in FIG. 14, because the measurement conditions include a plurality of rectangular pulses of different levels, the procedures from steps S16 to S 19 may not be repeated, but a scanning private sequence is performed to scan pixel transmission with different levels of scanning signals Vgate. Light intensity changes. In this method, the processing time can be shortened. In addition, the ratio of the parasitic capacitance cis to the total capacitance between the adjacent signal line 10 (which is adjacent to the signal line 10 corresponding to the pixel electrode 13) and the pixel electrode 13 cannot be ignored (please (See Figure 2), you can measure the signal line-pixel electrode parasitic capacitance c η _ -36- as described in the specific embodiment. This paper size applies to China National Standard (CNS) A4 (210X297 mm) 1221910 A7 _______B7 V. Description of the invention (33) The procedure for the ratio to the total capacitance Call is approximately the same procedure to calculate the ratio of the adjacent signal line-pixel electrode parasitic capacitance cis to the total capacitance Call. Specifically, in the display inspection device 1, the signal line probe 24 can also supply the package number 配备 to the display signal ^ provided. The signal line 10 around the pixel electrode 13 there. Therefore, the light intensity of the corresponding pixel can be measured while changing the level of the display signal Vsig to be supplied to the adjacent signal line 10 ', thereby changing the signal line and the pixel electrode parasitic power similarly as described above. A program of the ratio of the capacity Cis to the total capacitance CaU to calculate the ratio of the adjacent signal line-pixel electrode parasitic capacitance Cis to the total capacitance Ca 11. Specifically, according to the ratio of the signal line and pixel electrode parasitic capacitance cis to the total capacitance calculated in the specific embodiment described below, the display signal Vsig is defined as the fixed voltage Vsi in steps S12 and S13. It is not defined as the waveform shown in FIG. 12, and the display signal Vsig supplied to the adjacent signal line ι0 is set to have the same waveform as Vsig shown in FIG. 12. In addition, a driving waveform including a plurality of Vs 丨 level changes is set as a measurement condition in step S14. Then, a procedure similar to the calculation of the ratio of the signal line-pixel electrode parasitic capacitance Cis to the total capacitance Call in a specific embodiment as described above can be used to calculate the adjacent signal line · pixel electrode parasitic capacitance Cis relative to Ratio of total capacitance Call. At this time, the liquid crystal cell substrate 2 of the display screen section of the liquid crystal display is used as the main body to be inspected in the specific embodiment described above. However, without being limited to the foregoing, inspections of light emitting diodes, plasma displays, and field emission can also be performed.
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CN105129721A (en) * | 2015-09-10 | 2015-12-09 | 上海理工大学 | Micro actuator based on liquid crystal back flow effect, actuating device and dynamic performance measurement device of micro actuator |
CN110645959A (en) * | 2018-06-26 | 2020-01-03 | 晶翔机电股份有限公司 | Surface slope discriminating device and discriminating method thereof |
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JP2009258085A (en) | 2008-03-25 | 2009-11-05 | Epson Toyocom Corp | Pressure sensor and method for manufacturing the same |
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CN105129721A (en) * | 2015-09-10 | 2015-12-09 | 上海理工大学 | Micro actuator based on liquid crystal back flow effect, actuating device and dynamic performance measurement device of micro actuator |
CN110645959A (en) * | 2018-06-26 | 2020-01-03 | 晶翔机电股份有限公司 | Surface slope discriminating device and discriminating method thereof |
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