1221328 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種被動對準式雷射封裝，特別是指一種 -,銲接製程’就將所有元組件—次封裝成完整糊雷射 封衣，兀全無需晶粒裝定、金線連接與光纖對準等製程，增 加雷射封裝產量與製程簡易之被動對準式雷射封裝。8 【先前技術】 雷射封裳為光纖通訊的主角之―，現有雷射封裝製作程 序繁雜’以常見的TO型式的雷射二極體為例：首先，步驟 一在取得雷射二極體晶粒後， 頊光將晶粒利用晶粒裝定機 銲接於一 το型式的Φ i+ A t u h ㈣基座上’步驟二再用金線銲接機打 L接電流接點至雷射基座針腳與外界溝通，步驟三再用封 蓋機將TO封裝上蓋封住雷射其 . 步驟四再用三軸雷射銲 接機或光固合膠，固定#織纟 一本 d纖與TG型式雷射封裝，尤其最後 ^驟必須將雷射接通電流 ^, 土山田射先源，此雷射光源間 接作為與光纖對準之用，由於姐、、住丨> 夕 準光纖必須使用精密機械式 夕軸向平台，微調光纖與 士 度二間上的對準，遂名為 主動對準式雷射封裝，此蟲 驟不僅費時且設備昂貴，一次1221328 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a passive alignment laser package, and in particular refers to a-, soldering process, which encapsulates all the component components into a complete paste laser jacket. , Wuquan does not need die mounting, gold wire connection and optical fiber alignment processes, which increases laser packaging output and simple passive laser alignment. 8 [Previous technology] Laser sealing is the main character of optical fiber communication. The existing laser package manufacturing process is complicated. Take the common TO type laser diode as an example: First, step one is to obtain the laser diode. After the die, Kuangguang welded the die to a το type of Φ i + A tuh using a die setter. The second step was to use a gold wire welding machine to make an L contact to the laser base pin. Communicate with the outside world. Step 3: Use a capping machine to seal the TO package top cover to seal the laser. Step 4: Use a three-axis laser welding machine or light cement to fix the #woven fabric and a TG fiber laser. Packaging, especially in the last step, the laser must be connected to the current ^, the first source of Doyama field radiation, this laser light source is indirectly used to align with the optical fiber, because the optical fiber must use precision mechanical type The axial platform is used to fine-tune the alignment between the optical fiber and Shidu Second, so it is called an active alignment laser package. This worm step is not only time-consuming and expensive, once
製各只做一個雷射封I τ衣很難大量製造。 由此可見，上述習用物 . 仍有诸多缺失，實非一良善之 π冲者，而亟待加以改良。 。。 本案發明人鑑於上述習用 被動對準式雷射封裝所衍生 5 的各項缺點，乃亟思加以改良創新，並終夕 研究後，終於成功研發完成本件被動紫夕、年苦心孤詣潛心 【發明目的】 ：準式雷射封装。 本發明之目的在於提供一種被動對 +式雷射封裝，係利 用矽晶圓的可塑性，簡化雷射封裝 ” 細 私，提供光纖通訊廉 知且可大量製造的訊號光源。 【發明内容】 可達成上述發明目的之被動對準式雷射封襄，包括有： 、-矽晶片載台’該矽晶片載台短邊—端設有光訊號V型 溝槽’而矽晶片載台之長邊設有定位v型溝槽，另外，光訊 號V型溝槽兩旁共有若干銲接墊，而 丈证V型溝槽一側則設 有二訊號接線，各訊號接線上分収有電極銲接塾及 -訊號線銲接墊，再者，該光訊號V型溝槽與定位V型溝槽 之T型交接處設有—反射鏡作為光訊號轉向裝置，且該反射 鏡貼於定位V型溝槽之斜邊； 一矽晶片蓋子，該矽晶片蓋子上具有光訊號¥型溝槽與 疋位V型溝槽，且該矽晶月蓋子對應矽晶片載台上所設之銲 接墊數目及位置處亦設有若干銲接墊，而在定位¥型溝槽一 側設有一嵌孔作為雷射二極體嵌合定位之用，嵌孔上有一 N 型電極銲接墊並連接著訊號接線，而該訊號接線由嵌孔將訊 该:連接至石夕晶片蓋子表面的訊號線銲接墊； 一雷射二極體，該雷射二極體上有一發光主動區，並且 接上訊號接線D緊接連上P型電極銲接墊，另於雷射二極體 背面有一 N型電極銲接墊；以及 若干光纖，為可容置㈣asaq台 * 型溝槽尹。 〃、日日片蓋子上的 【實施方式】 本發明所提供之被動對準式雷射 發晶《1 曰故知t X丨 ’、和用早晶成長之 夕曰曰®因曰a袼排列所成的不同晶向，在 溶液時，會產生不η、# Ϋ '特疋之化學蝕刻 … 不问速率的餘刻效果之非等向性餘刻；雖块 大心石夕晶圓各種結構型態的微細加工已是相 ❹ 術，但，本發明利用此一特點，設 " 鈿 ’ °又"製作出獨創的結構型態 、，且合，可以將雷射封裝簡易成 祜m t 我裟私就可以達成普遍 使用的雷射封裝方法所能達到的目的。 —及®四所示’本發明所提供之被動對準式雷 士封裝’主要包括有一矽晶片載台卜—矽晶月蓋子13、一 雷射二極體24及^光纖29，财晶片載台丨係利用非等 向性姓刻做出兩個互相垂直並各自平行於石夕晶片載台丨長邊 :、知故的V型溝槽，分別是於短邊只有-端th 口光訊號v型 溝:2與於長邊有兩端出口定位v型溝槽3，且光訊號” 位V型溝槽3兩者的深度剛好可讓光纖2 9置入 ’、間、(光織29圓心高度為與矽晶片載台】表面高度等高）， 並在光σΐ1喊V型溝槽2兩旁共有四個銲接墊4、5、6、7，而 定位V 5L溝槽3 -侧有兩條訊號接線8與9，訊號接線8上 有一 Ρ型電極銲接墊10，訊號接線9上有一訊號線銲接墊 1221328 11，最後，在光訊號V型溝槽2 接處有一反射鏡12作為光訊聚^ 定位V型溝槽3之斜邊上。 與定位V型溝槽3之τ型交 轉向裝置，此反射鏡1 2貼於 請參閱圖二及圖四所示5 ★ 。淼明所提供之被動對準式雷 射封裝中，該矽晶片蓋子13介曰 亦疋利用非等向性蝕刻做出兩 個形式與矽晶片載台1上相同之 i溝槽，为別為光訊號v 型溝槽14與定位v型溝槽I ^ 如同矽晶片載台」上相同之It is difficult to manufacture a large number of laser-seal I τ clothings. It can be seen that there are still many shortcomings in the above-mentioned conventional objects. They are not a good π-pusher, and need to be improved. . . In view of the above-mentioned shortcomings derived from the conventional passive alignment laser package, the inventor of this case was eager to improve and innovate. After research, he finally successfully developed and completed this passive purple evening and painstaking effort. [Objective] : Quasi-laser package. The purpose of the present invention is to provide a passive pair + laser package, which uses the plasticity of silicon wafers to simplify the laser package. It is private and provides a signal light source with low-cost optical fiber communication and can be manufactured in large quantities. [Summary of the Invention] Achievable The above-mentioned passive alignment laser sealing device for the purpose of the invention includes:-a silicon wafer stage 'the short side of the silicon wafer stage-an optical signal V-shaped groove is provided at the end' and the long side of the silicon wafer stage is arranged There are positioning V-shaped grooves. In addition, there are several welding pads on both sides of the V-shaped groove of the optical signal, and there are two signal wirings on one side of the V-shaped groove of the certification. Each signal wiring has electrode welding 塾 and-signal. Wire soldering pads, and the T-shaped junction between the V-shaped groove of the optical signal and the positioning V-shaped groove is provided with a reflector as an optical signal steering device, and the reflector is attached to the hypotenuse of the positioned V-shaped groove ; A silicon chip cover, which has optical signal ¥ -shaped grooves and V-shaped grooves on the silicon chip cover, and the silicon crystal moon cover is also provided at the number and position corresponding to the solder pads provided on the silicon wafer stage. Several solder pads, and A recessed hole is used for the positioning of the laser diode. The recessed hole has an N-type electrode pad and is connected to the signal wiring. The signal wiring is signaled by the recessed hole: the signal connected to the surface of the cover of the Shixi chip Wire welding pad; a laser diode, the laser diode has a light-emitting active area, and is connected to the signal wiring D and then a P-type electrode pad, and an N-type electrode on the back of the laser diode Welding pads; and a number of optical fibers, which can accommodate ㈣asaq stage * -shaped grooves. 实施, [Embodiment] on the cover of Japanese and Japanese films [Passive alignment type laser crystals provided by the present invention "1 故知 知 t X丨 ', and the different crystal orientations formed by the arrangement of early crystal growth due to the arrangement of a 袼, when in solution, chemical etching that does not have η, # Ϋ' special 'will be produced ... regardless of the rate effect The non-isotropic remnant; although the microfabrication of various structural types of a large core stone wafer is already a relative technique, the present invention uses this feature to design "" 钿 '° 又 " Structure, and the combination, can easily encapsulate the laser into 祜 mt The private can achieve the purpose that the commonly used laser packaging method can achieve.-And the "passive alignment NVC package provided by the present invention" shown in Figure 4 mainly includes a silicon wafer carrier-silicon crystal moon Cover 13, a laser diode 24, and a fiber 29. The wafer carrier is made of two non-isotropic engraved planes that are perpendicular to each other and parallel to the Shixi wafer carrier. The V-shaped grooves are only-end th port optical signal v-shaped grooves on the short side: 2 and V-shaped groove 3 positioned on the long side with two ends of the exit, and the optical signal is "V-shaped groove 3". The depth of the fiber is just enough for the optical fiber 29 to be inserted into the optical fiber 29 (the height of the center of the optical fiber 29 is the same as the surface height of the silicon wafer stage), and there are four solder pads 4 on both sides of the V-shaped groove 2 at the light σΐ1. , 5, 6, 7, and positioning V 5L groove 3-There are two signal wirings 8 and 9 on the signal wiring 8, there is a P-type electrode pad 10 on the signal wiring 8, and a signal wire welding pad 1221328 11 on the signal wiring 9, and finally A reflecting mirror 12 is located at the junction of the optical signal V-shaped groove 2 as an optical signal and is positioned on the hypotenuse of the V-shaped groove 3. The τ-type cross steering device for positioning the V-shaped groove 3, the mirror 1 2 is attached to Please refer to Fig. 2 and Fig. 4 5 ★. In the passive alignment laser package provided by Miaoming, the silicon chip cover 13 also uses anisotropic etching to make two i-channels which are the same as those on the silicon wafer stage 1. The optical signal v-groove 14 is the same as the position of the v-groove I ^
四個鲜接塾16、17、18、lq，+ ^ 19在疋位V型溝槽3 —側，有一 嵌孔2 0作為雷射二極體3〗叔人Four freshly connected 塾 16,17,18, lq, + ^ 19 is on the side of the V-shaped groove 3 on the 疋 position, there is an embedded hole 20 as the laser diode 3 〖Uncle
篮dl敗合定位之用，嵌孔20上有一 N 型電極銲接墊21並逯；&荃1 ^ ^ ^ · 亚運接者矾5虎接線22，而訊號接線22由嵌For the purpose of positioning the basket dl, the embedded hole 20 is provided with an N-type electrode welding pad 21 and & Tsuen 1 ^ ^ ^ · Asian Games receiver Alum 5 tiger wiring 22, and the signal wiring 22 is embedded by
孔2。將訊號連接至矽晶片蓋子13表面的訊號線銲接墊μ。 晴參閱圖三及圖四所示，本發明所提供之被動對準式雷 射封裝中’該雷射二極體24上有一發光主㈣25，並且接 上戒號接線26緊接連上ρ型電極銲接塾27，另於雷射二極 體背面有一 Ν型電極銲接墊28。 睛參閱圖一、二三四及圖五所示，本發明所提供之被動 對丰式雷射封農係將兩條截斷一定長度的光纖29置放於定 位V型溝槽32的兩端，放入後的光纖29圓心高度設計與矽 晶片載台1與發晶片蓋子13表面等高，接著將作為光訊號 輪出之光纖29置放於光訊號ν型溝# 2上，再將雷射二極 體24的發光面朝上嵌入矽晶片蓋子丨3的嵌孔2〇上，此時 田射—極體24上的N型電極銲接墊28與矽晶片蓋子13上 、1兒極銲接墊24面對面接合，然後將矽晶片蓋子1 3連 同田射一極體24兩者同時翻轉180度，使石夕晶片載台}與 '曰曰片盍子13的光訊號V型溝槽2、14與定位V型溝槽3、 15兩兩相對，再將矽晶片蓋子往矽晶片載台1方向推進 直至兩者緊密接合，當矽晶片載台i與矽晶片蓋子Μ緊密 接合後，兩者所有銲接墊4與16、5與17、6與18、7與19、 27與以及11與23,再加上28與21，總共7對兩兩面對 、、‘接墊此時再使用烊接設備同時加熱所有銲接墊使其 融接，而整個過程只經過—次焊接製程，光是此優點，就可 ^簡化雷射封裝製程的難度。雷射二極體24動藉著訊號接 線8、9注入電流，使發光主動區25發射出雷射光，雷射光 =反射鏡12改變前進方向，然後雷射光將可導人光纖W ^完完整的光訊號發送行程，上述中，切晶片载台^ 與矽晶片蓋子13的光訊號V型溝槽2、14與定位v型溝槽3、 15兩兩相對時，兩兩互相垂直的v型溝槽2、3、Η、^不 僅控制了石夕晶片載台1與石夕晶片蓋子13的平面位置定位， 也控制了兩者的接合面傾斜誤差，也就切晶片載台… :片蓋子13在三維空間軸以及z軸的擺置位置，藉 者V型溝槽2、3、14、15與光纖29達到精確空間定位，由 於雷射二極體24置放的丧孔2〇區域定義，在製程上，是與 1221328 V型溝槽14、15同時設計在一起的，同理，反射鏡12的位 置也是與V型溝槽2、3 „.設計在—起的，於是，當石夕晶 月載台！與石夕晶片蓋子U完成緊密接合時，同時也表示， 雷射二極體24,反射鏡12與裸光纖31可以形成固定的相對 位置。 【特點及功效】 本發明所提供之被動對準式雷射封裝，與前料證案及 其他習用技術相互比較時，更具有下列之優點： 1. 本發明可以簡化雷射封裝製程困難度，降低生產成本。 2. 本發明可以捨棄昂貴的打金線設備與精密多軸向焊接 設備，降低設備投資成本。 3. 本發明由於結構設計單純，沒有多於零㈣，組裝失 誤的機率降低，可以提高產品的良率。 4·本發明可以同時間批量製造，提高生產數量，有別於 習用技術一次只能製作一個的低產出效率。 5.本發明可以降低人事成本，由於製㈣胃，人貢可以 減少，間接減少人為操作失誤所造成的浪費。 :“羊細說明係針對本發明之—可行實施例之具體說 ::惟該實施例並非用以限制本發明之專利範圍，凡未脫離 專利範圍中。 寺…更，均應包含於本案之 綜上所述，太查 能較習 本案不但在技術思想上確屬創新，並 10 1221328 用物品增進上述多項功效·應已充分符合新穎性及進步性之 法定發明專利要件，爰依法提出申請，懇請 貴局核准本件 發明專利申請案，以勵發明，至感德便。 【圖式簡單說明】 請參閱以下有關本發明一較佳實施例之詳細說明及其附 圖，將可進一步瞭解本發明之技術内容及其目的功效；有關 該實施例之附圖為： 圖一為矽晶片載台之立體外觀圖； 圖二為矽晶片蓋子之立體外觀圖； 圖三為該雷射二極體之透視放大圖； 圖四為該被動對準式雷射封裝之立體分解圖；以及 圖五為該被動對準式雷射封裝之立體外觀圖。 【主要部份代表符號】 1 矽晶片載台 2 光訊號V型溝槽 3 定位V型溝槽 4 焊接墊 5 焊接墊 6 焊接墊 7 焊接墊 8 訊號接線 9 訊號接線 10 P型電極焊接墊 11 訊號線焊接墊 ~ 12 反射鏡 13 矽晶片蓋子 14 光訊號V型溝槽 15 定位V型溝槽 16 焊接墊 17 焊接墊 „ 18 焊接墊 1221328 19 焊接墊 20 崁孔 21 N型電極焊接墊 22 訊號接線 23 訊號線焊接墊 。 24 雷射二極體 25 發光主動區 26 訊號接線 27 Ρ型電極焊接墊 28 Ν型電極焊接墊 29 光纖 12Hole 2. The signal is connected to the signal wire bonding pad μ on the surface of the silicon chip cover 13. As shown in FIG. 3 and FIG. 4, in the passive alignment laser package provided by the present invention, 'the laser diode 24 has a light emitting main pin 25, and a ring wire 26 is connected to a rhodium electrode. Welding 塾 27, and an N-type electrode welding pad 28 on the back of the laser diode. Referring to FIG. 1, FIG. 2 and FIG. 4, and FIG. 5, the passive paired laser-type laser seal farming system provided by the present invention places two cut-off optical fibers 29 of a certain length at both ends of the positioning V-shaped groove 32. The height of the center of the inserted optical fiber 29 is designed to be the same height as the surface of the silicon wafer stage 1 and the cover 13 of the transmitting chip. Then, the optical fiber 29 as the optical signal wheel is placed on the optical signal v-shaped groove # 2 and then the laser is placed. The light-emitting surface of the diode 24 is inserted upward into the insertion hole 20 of the silicon wafer cover. 3, at this time, the N-type electrode pad 28 on the field emitter-pole body 24 and the silicon wafer cover 13 and the 1-pole pad 24 Face-to-face bonding, and then flip the silicon wafer cover 1 3 together with the field emitter 24 at the same time by 180 degrees, so that the Shi Xi wafer stage} and the light signal V-shaped grooves 2, 14 and 14 of the wafer chip 13 Position the V-shaped grooves 3 and 15 opposite each other, and then push the silicon wafer cover toward the silicon wafer stage 1 until the two are tightly connected. After the silicon wafer stage i and the silicon wafer cover M are tightly connected, all of the two are welded. Pads 4 and 16, 5 and 17, 6 and 18, 7 and 19, 27 and 11 and 23, plus 28 and 21, a total of 7 pairs face to face ,, At this time, re-use pads connected devices while heating molten solder pad so that all of fused, but only after the whole process - once welding process, the advantages of this light, the laser can be difficult ^ simplified packaging process. The laser diode 24 injects current through the signal wirings 8 and 9 to cause the light emitting active area 25 to emit laser light. The laser light = the reflector 12 changes the direction of advance, and then the laser light will be guided to the optical fiber W ^ Complete Optical signal transmission stroke. In the above, when the chip carrier ^ is opposite to the optical signal V-shaped grooves 2 and 14 of the silicon wafer cover 13 and the positioning v-shaped grooves 3 and 15 face each other, the two v-shaped grooves perpendicular to each other. The slots 2, 3, Η, ^ not only control the planar position positioning of the Shixi wafer stage 1 and the Shixi wafer cover 13, but also control the inclination error of the joint surface of the two, so that the wafer stage is cut ...: 片 盖 13 In the three-dimensional space axis and the z-axis placement position, the borrower V-grooves 2, 3, 14, 15 and the optical fiber 29 achieve precise spatial positioning. Due to the definition of the area of the hole 20 in the laser diode 24, In the manufacturing process, it is designed together with the 1221328 V-shaped grooves 14 and 15 at the same time. Similarly, the position of the reflector 12 is also designed with the V-shaped grooves 2 and 3. Therefore, when Shi Xi Crystal Moon Stage! When the tight joint with Shi Xi wafer cover U is completed, it also shows that the laser diode 24, the mirror 12 and bare fiber 31 can form a fixed relative position. [Features and effects] The passive alignment laser package provided by the present invention has the following advantages when compared with the previous evidence and other conventional technologies: 1 The present invention can simplify the difficulty of the laser packaging process and reduce the production cost. 2. The present invention can abandon the expensive gold wire equipment and precision multi-axial welding equipment and reduce the equipment investment cost. 3. Because the structure design of the present invention is simple, No more than zero, the probability of assembly errors is reduced, and the yield of the product can be improved. 4. The present invention can be manufactured in batches at the same time, increasing the production quantity, which is different from the low output efficiency that conventional technology can only produce one at a time. 5 The present invention can reduce personnel costs. As the stomach is made, the tribute can be reduced, which indirectly reduces the waste caused by human operation errors. "" The detailed description of the sheep is for the specific implementation of the present invention-feasible embodiment: only the implementation The examples are not intended to limit the patent scope of the present invention, and they do not depart from the patent scope. Temple ... More, all should be included in the summary of this case. Taicha can not only be more innovative in terms of technical ideas than Xi case, but also use 10 1221328 to enhance the above-mentioned multiple effects with articles. It should have fully met the novelty and progressiveness. The statutory invention patent elements are submitted in accordance with the law, and your office is urged to approve this invention patent application in order to encourage inventions and to feel good. [Brief description of the drawings] Please refer to the following detailed description of a preferred embodiment of the present invention and the accompanying drawings to further understand the technical content of the present invention and its purpose and effect; the drawings related to this embodiment are: Figure 1 Figure 3 is a perspective view of a silicon wafer stage; Figure 2 is a perspective view of a silicon wafer cover; Figure 3 is a perspective enlarged view of the laser diode; Figure 4 is a perspective exploded view of the passive alignment laser package ; And FIG. 5 is a perspective view of the passive alignment laser package. [Representative symbols of main parts] 1 Silicon wafer stage 2 Optical signal V-groove 3 Positioning V-groove 4 Welding pad 5 Welding pad 6 Welding pad 7 Welding pad 8 Signal connection 9 Signal connection 10 P-type electrode welding pad 11 Signal wire soldering pads ~ 12 Reflector 13 Silicon chip cover 14 Optical signal V-groove 15 Positioning V-groove 16 Welding pad 17 Welding pad „18 Welding pad 1221328 19 Welding pad 20 Countersink 21 N-type electrode welding pad 22 Signal Wiring 23 Welding pads for signal wires 24 Laser diodes 25 Luminous active area 26 Signal wiring 27 P-type electrode welding pads 28 N-type electrode welding pads 29 Optical fiber 12