TWI221022B - Semiconductor optoelectrical processing device for reducing light refraction - Google Patents

Abstract

A semiconductor optoelectrical processing device for reducing light refraction comprises a shell body with a glass lid, a semiconductor chip installed inside the shell body and a thixotropic optical gel. The semiconductor chip has an active surface corresponding to the glass lid. The thixotropic optical gel is filled between the active surface of the semiconductor chip and the glass lid of the shell body in order to reduce light refraction and diffraction happened in the gap between the semiconductor chip and the glass lid.

Description

1221022

[Technical field to which the invention belongs] The present invention relates to a semiconductor optoelectronic processor for reducing light refraction ', and more particularly to an image display processor for reducing light refraction. [Previous technology] A more common semiconductor optoelectronic processor is the image display used in a rear projector. For example, it is used in a digital light source processor [Digi tal Light

Digital micromirror device [Processing device, DLP]

Micfomio'ior Device (DMD) or liquid crystal silicon substrate display device [Liquid Crystal ON Silicon, LCOS], which should have good

Light processing characteristics to achieve large-size and fine-screen display, and the conventional semiconductor optoelectronic processor has a semiconductor wafer, which is hermetically assembled in a housing, the cover of the housing and the glass cover There is a gap between the semiconductor wafers, and the gap is filled with air or in a vacuum state. The refractive index of the glass cover is about 15, and the refractive index of air is about 1.003. Because of the difference in refractive index between the two, As a result, the semiconductor optoelectronic processor will generate light diffraction and light refraction, which will cause the output light source and image to be reflected incorrectly, which will affect the image display screen. [Summary of the Invention] The main purpose of the present invention is to provide a semiconductor optoelectronic processor that reduces light refraction. A thixotropic optical colloid (thixotropic L · optical, gel) is used to form an active surface of a semiconductor wafer and a Between the glass covers of the housing, the problems of light diffraction and light refraction between the glass cover and the semiconductor wafer are reduced. A semiconductor optoelectronic processor for reducing light refraction according to the present invention includes

1221022 V. Description of the invention (2) A casing, a semiconductor wafer and a thixotropic optical gel, wherein the casing has a substrate and a glass cover, wherein the substrate can be a ceramic circuit substrate. Fixing the semiconductor wafer 'the semiconductor wafer has an active surface and a corresponding back surface' wherein the rear surface of the semiconductor wafer is provided on the substrate of the housing 'the active surface of the semiconductor wafer corresponds to a glass cover, and the contact A denatured optical glue system is formed between the semiconductor wafer and the glass cover. Preferably, the thixotropic optical glue system has a refractive index between 丨 and a range of 14 to 1.5. The refractive index is particularly preferred to reduce the problems of light diffraction and light refraction that occur between the housing and the semiconductor wafer. [Embodiment] With reference to the drawings, the present invention will be described by the following embodiments. According to a first specific embodiment of the present invention, please refer to FIG. 1. A semiconductor optoelectronic processor 100 for reducing light refraction includes a housing, a semiconductor wafer 120, and a thixotropic optical colloid 130. [thixotropic optical gel], wherein the housing 110 includes a substrate 111 and a glass cover 112. The substrate 111 may be a ceramic circuit substrate. The substrate 111 has a top surface 111a and a bottom surface 111b. The substrate 111 It is used to fix and electrically connect the semiconductor wafer 120. In this embodiment, a frame wall 1 13 is fixed around the substrate 111, which forms a crystal-capacitor chamber with the top surface 11a of the substrate 111. 11, the crystal chamber 11 4 is located on the top surface 111 a of the substrate 111 to accommodate the semiconductor wafer 1 2 0, and the frame wall 11 3 can be combined with the glass cover 11 2 [glass 1 id], The glass cover 11 2 is mounted on the substrate 111

Page 91221022 5. The top surface 111a of the description of the invention (3) is used to seal the crystal-capacitive chamber 11 4. The semiconductor wafer 120 has an active surface 121 and a corresponding back-surface 122. In this embodiment, the active surface 121 of the semiconductor wafer 120 can be provided with a glass substrate 123, and the glass substrate 123 has a ITO [Indium Tin Oxide] conductive layer 124, so that the semiconductor wafer 120 and the glass substrate 123 are assembled into a digital micromirror device (DMD), a liquid crystal substrate substrate cell [Liquid Crystal On Silicon cell, LCOS cell] or other semiconductor optoelectronic components, in which the back surface 122 of the semiconductor wafer 120 is provided on the substrate 111 of the housing 110, and the semiconductor wafer 120 can be epoxy adhesive 1 4 3 is adhered to the substrate 111. The active surface 1 2 1 of the semiconductor wafer 1 2 0 corresponds to the glass cover 11 2, and the active surface 121 of the semiconductor wafer 1 2 0 is formed with a plurality of micro-electromechanical devices. Mirror structure [mirrior], pixel element [pixel element] or sensing element [not shown], or the micro-electromechanical element of the above-mentioned micro-mirror structure can also be used on a glass substrate 123 The surface facing the active surface 1 2 1 of the semiconductor wafer 120 is electrically connected to the semiconductor wafer 1 2 0 and the substrate 111 by a plurality of electrical connection elements 1 4 1. The electrical connection elements 1 4 1 are As a fresh line, preferably, a ground element 142 is used to electrically connect the IT0 conductive layer 124 of the glass substrate 123 to the substrate 111. The thixotropic optical colloid 13 0 fills the space between the semiconductor wafer 丨 2 0 and the β glass cover 11 2, so that there is no difference between the main surface 121 of the semiconductor wafer 1 2 q and the glass cover 112. Diffraction and light refraction can occur due to vacuum or air. Preferably, the thixotropic optical colloid 丨 3 〇 system has a median 1221022

Refractive index between 1 and 0003 and 1.5 [refractive, in which the refractive index between "4 ~ 1 · 5" is particularly preferred to reduce the glass cover 11 2 and the + body in the housing 丨 i 〇 The phenomenon of light diffraction and light refraction occurs at intervals of 1 to 20 of the wafer, and the thixotropic optical colloid 3 has a

[Q45〇Y75〇nm] Visible light absorption, which is less than 0.003 [/ 〇 / micron] 'In this embodiment, the thixotropic optical colloid 13 has thixotropic properties. The denatured optical colloid 130 can be flow-applied on the active surface 121 of the semiconductor wafer 120. When the optoelectronic processor is at rest, the thixotropic optical colloid 13 is filled densely if frozen. Formed between the active surface 12 1 and the glass cover 1 12 of the semiconductor wafer 20, since the thixotropic optical colloid 1 30 still has thixotropic properties after the processor assembly is completed, the thixotropic optical colloid 丨3 〇 = The same as the conventional transparent colloid after curing, so that the semiconductor optoelectronic processor 100 has good reworkability. Preferably, a support plate 116 is further provided in the casing. The support plate 116 supports a barrier mask 丨 15. The barrier mask 115 has an opening 117 to expose the thixotropic optical colloid 1 30, and the barrier mask 115 is used to block the thixotropic optical colloid. 130, making the thixotropic optics The body 30 does not contact the substrate 111, but still allows the thixotropic optical colloid 130 to be formed between the semiconductor wafer 120 and the glass cover 112, so as to reduce the light around the semiconductor optoelectronic processor 1000. The problem of radiation and light refraction. According to a second specific embodiment of the present invention, please refer to FIG. 2, which discloses a semiconductor optoelectronic processor 200 for reducing light refraction, which includes a housing 210, a semiconductor wafer 220 and a thixotropic optics. colloid

1221022 5. Description of the invention (5) 230, the housing 210 includes a substrate 21 1 and a glass cover 212, wherein the substrate 2 11 has a frame wall 2 1 3 integrally formed on the periphery of the top surface, and the frame wall 2 1 The 3 series can be formed with a pre-mold [pre-molding] to form a central cavity; the recessed cavity 2 1 4 or a substrate 2 1 1 to form a cavity to form the cavity. 214, and the frame wall 213 is combined with the glass cover 112 [glass 1 id]. The semiconductor wafer 220 is set in the capacitor cell 214 of the housing 210 and is electrically connected to the side substrate 211. The semiconductor wafer 220 series Depending on the requirements of the design of optoelectronic products, it can be a semiconductor optoelectronic element such as an image display chip of a projector, a sensor chip of a digital camera, a light emitting chip, and a micro-electromechanical chip. The semiconductor chip 220 has an active surface 221 and a corresponding back surface. 2 2 2 'The active surface 2 2 1 corresponds to the glass cover 21 2, and the thixotropic optical colloid 230 is filled between the active surface 221 of the semiconductor wafer 220 and the glass cover 212, and the semiconductor wafer 220 The active surface 221 can be provided Glass substrate 223. In this embodiment, the active surface 221 of the semiconductor wafer 22 is formed with redistribution lines 224 or electrical through holes (not shown). These redistribution lines 2 2 4 are electrically The active surface 221 and the back surface 222 of the semiconductor wafer 220 are turned on, so that a plurality of bumps 241 formed on the back surface 222 of the semiconductor wafer 220 are electrically connected to the active surface 221, and the semiconductors are electrically connected by the bumps 241. An underfilling material 242 is formed between the wafer 22 and the substrate 211. Preferably, an underfilling material 242 is formed between the semiconductor wafer 22 and the substrate 2 to securely bond the semiconductor wafer 22. Therefore, the semiconductor The optoelectronic processor 200 uses a structure in which the thixotropic optical colloid 23 is formed between the semiconductor wafer 220 and the glass cover 212 of the housing 210,

Page 12 1221022 5. Description of the invention (6) Features to reduce the problems of light diffraction and light refraction between the glass cover 212 and the semiconductor wafer 220. The protection scope of the present invention is subject to the attached application. Any changes and modifications made by anyone skilled in the art without departing from the scope of the present invention are covered by the scope of the present invention: He Fan. Lu

1221022 Brief description of the drawings [Schematic illustration of the first figure: a first specific embodiment 5 according to the present invention-a kind of cross-section schematic diagram of a semiconductor optoelectronic processor minus i; and Fig. 2: a second specific according to the present invention Embodiment 5 --- A schematic diagram of a cross section of a semiconductor optoelectronic processor with minus 4 〇 Simple explanation of the component symbols: 100 semiconductor optoelectronic processor 110 housing 111 substrate 111a top surface 111b bottom surface 112 glass cover 113 frame wall 114 capacitor crystal 115 barrier cover 116 Support plate 117 Opening 120 Semiconductor wafer 121 Active surface 122 Back surface 123 Glass substrate 124 Conductive layer 130 Thixotropic optical colloid 141 Welding wire 14 2 Grounding member 143 Adhesive 200 Semiconductor optoelectronic processor 210 Housing 211 Substrate 212 Glass cover 213 Frame wall 214 Capacitor cell 220 Semiconductor wafer 221 Active surface 222 Back surface 223 Glass substrate 224 Redistribution line 230 Thixotropic optical colloid 241 Bump 242 Underfilled gel chamber «Φ

Page 14

Claims (1)

1221〇22 6. Scope of patent application Patent scope], a semiconductor optoelectronic housing, which is a package of a semiconductor wafer, wherein the main semiconductor semiconductor wafer is thixotropic optical adhesive system filled in the semiconductor as in the patent application scope The housing has a semiconductor, the glass surface, wherein the plate chamber wafer is provided with a glass cover, and the processor includes: a substrate and a glass cover; a back surface having an active surface and a corresponding back wafer The moving surface is provided on the substrate of the casing, and the moving surface corresponds to the glass cover; and the body C thixotropic optical gel], between the body wafer and the glass case. The semiconductor optoelectronic processor according to the first item, wherein the capacitor chamber is formed on the top surface of the substrate, is in the capacitor chamber, and is electrically connected to the top surface based on the substrate to seal the substrate. The # Μ I crystal is the semiconductor optoelectronic processor described in item 1 of the scope of the patent application, and the thixotropic optical adhesive system has a refractive index between 1.0 003 and 15. According to the semiconductor optoelectronic processor described in item 1 of the scope of patent application, the thixotropic optical adhesive system has a refraction index between [1.4 to 1.5]. [Refractive index]. According to the semiconductor optoelectronic processor described in the first item of the patent application scope, the thixotropic optical adhesive system has a visible light absorption rate, and I a t 'τ Dan system is less than 0 03 [% / micron]. The semiconductor optoelectronic processor according to item 1 of the scope of patent application, wherein a blocking cover is provided in the shell to block the thixotropic umbrella II X Tuyou Xue colloid shot Λ medium rate 0.6 IHil ΙΗ 1221022 Do not touch the substrate. For example, the scope of the patent application also includes a plurality of electrical sheets and the substrate. ! The semiconductor optoelectronic processor according to item 1, its connecting element 'is used to electrically connect the semiconductor crystal as described in the patent application scope No. 7 jg, +, ^ (semiconductor optoelectronic virtual π described in item 1) The electrical connection elements are bonding wires. 9 'The electrical connection elements in the semiconductor optoelectronic processor described in item 7 of the scope of patent application are bumps. 10. The semiconductor described in item i of scope of patent application. Optoelectronic processor, where the substrate is a ceramic circuit board. 1 1. The semiconductor optoelectronic processor as described in item 1 of the patent application scope, wherein the active surface of the semiconductor wafer is provided with a glass substrate. 12. Rushen Patent The semiconductor optoelectronic processor according to item 11 in the scope, wherein the glass substrate is provided with a plurality of microelectromechanical elements on a surface facing the active surface of the semiconductor wafer. 13. The semiconductor optoelectronic device according to item 11 in the scope of Shen Qing patent A processor, wherein the thixotropic optical adhesive system is formed between a glass substrate on the semiconductor wafer and the glass cover. J 4. The semiconductor optoelectronic processor according to item 1 of the scope of patent application, The δH semiconductor wafer has a plurality of redistribution lines to electrically connect the active surface and the back surface of the semiconductor wafer. 丨 5. The semiconductor optoelectronic processor according to item 1 of the patent application scope, wherein the semiconductor wafer has A plurality of electrical through holes for electrically conducting the upper and lower surfaces of the semiconductor wafer. Page 16 1221022 VI. Patent Application Range 16. The semiconductor optoelectronic processor described in item 1 of the patent application range, wherein the semiconductor wafer is a digital micromirror device [D i g i t a 1 Micromirrior Device, DMD]. 17. The semiconductor optoelectronic processor according to item 1 of the scope of patent application, wherein the semiconductor wafer is a liquid crystal on silicon cell (LCOS cell).