TWD166703S - light emitting diode crystal - Google Patents
light emitting diode crystalInfo
- Publication number
- TWD166703S TWD166703S TW103302900F TW103302900F TWD166703S TW D166703 S TWD166703 S TW D166703S TW 103302900 F TW103302900 F TW 103302900F TW 103302900 F TW103302900 F TW 103302900F TW D166703 S TWD166703 S TW D166703S
- Authority
- TW
- Taiwan
- Prior art keywords
- gallium nitride
- emitting diode
- nitride layer
- light emitting
- substrate
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 229910002601 GaN Inorganic materials 0.000 abstract 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
Abstract
【物品用途】;本創作施加電壓後會發光,而可作為發光源使用。;【設計說明】;請參閱各圖面所示,本創作為發光二極體晶粒,其包含一基板與堆疊於該基板上的一氮化鎵層與堆疊於該氮化鎵層上的一電極層,其中該氮化鎵層的區域略小於該基板,而該電極層具如圖所示之外形。[Item Usage]; This creation will emit light when voltage is applied and can be used as a light source. ;[Design Description];Please refer to the drawings. This invention is a light-emitting diode die, which includes a substrate, a gallium nitride layer stacked on the substrate, and a gallium nitride layer stacked on the gallium nitride layer. An electrode layer, wherein the area of the gallium nitride layer is slightly smaller than the substrate, and the electrode layer has a shape as shown in the figure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103302900F TWD166703S (en) | 2014-05-15 | 2014-05-15 | light emitting diode crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103302900F TWD166703S (en) | 2014-05-15 | 2014-05-15 | light emitting diode crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
TWD166703S true TWD166703S (en) | 2015-03-21 |
Family
ID=89711493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103302900F TWD166703S (en) | 2014-05-15 | 2014-05-15 | light emitting diode crystal |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWD166703S (en) |
-
2014
- 2014-05-15 TW TW103302900F patent/TWD166703S/en unknown
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