TWD166703S - light emitting diode crystal - Google Patents

light emitting diode crystal

Info

Publication number
TWD166703S
TWD166703S TW103302900F TW103302900F TWD166703S TW D166703 S TWD166703 S TW D166703S TW 103302900 F TW103302900 F TW 103302900F TW 103302900 F TW103302900 F TW 103302900F TW D166703 S TWD166703 S TW D166703S
Authority
TW
Taiwan
Prior art keywords
gallium nitride
emitting diode
nitride layer
light emitting
substrate
Prior art date
Application number
TW103302900F
Other languages
Chinese (zh)
Original Assignee
聯勝光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 聯勝光電股份有限公司 filed Critical 聯勝光電股份有限公司
Priority to TW103302900F priority Critical patent/TWD166703S/en
Publication of TWD166703S publication Critical patent/TWD166703S/en

Links

Abstract

【物品用途】;本創作施加電壓後會發光,而可作為發光源使用。;【設計說明】;請參閱各圖面所示,本創作為發光二極體晶粒,其包含一基板與堆疊於該基板上的一氮化鎵層與堆疊於該氮化鎵層上的一電極層,其中該氮化鎵層的區域略小於該基板,而該電極層具如圖所示之外形。[Item Usage]; This creation will emit light when voltage is applied and can be used as a light source. ;[Design Description];Please refer to the drawings. This invention is a light-emitting diode die, which includes a substrate, a gallium nitride layer stacked on the substrate, and a gallium nitride layer stacked on the gallium nitride layer. An electrode layer, wherein the area of the gallium nitride layer is slightly smaller than the substrate, and the electrode layer has a shape as shown in the figure.

TW103302900F 2014-05-15 2014-05-15 light emitting diode crystal TWD166703S (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103302900F TWD166703S (en) 2014-05-15 2014-05-15 light emitting diode crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103302900F TWD166703S (en) 2014-05-15 2014-05-15 light emitting diode crystal

Publications (1)

Publication Number Publication Date
TWD166703S true TWD166703S (en) 2015-03-21

Family

ID=89711493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103302900F TWD166703S (en) 2014-05-15 2014-05-15 light emitting diode crystal

Country Status (1)

Country Link
TW (1) TWD166703S (en)

Similar Documents

Publication Publication Date Title
EP3401970A4 (en) Quantum dot light-emitting diode substrate with bonding layer and preparation method therefor
TWD178232S (en) Portion of a high bay led device
TWD170851S (en) Portion of light emitting diode (led) package
BR112016024795A2 (en) organic LED with surface modification layer
TWD166713S (en) Sealing member for substrate tray
WO2016013894A3 (en) Organic compound and organic electroluminescent device comprising same
TWD164809S (en) Part of light emitting diode chip
TWD163754S (en) Part of light emitting diode chip
WO2015099477A3 (en) Organic compound and organic light-emitting diode device using same
TWD173887S (en) Part of light emitting diode chip
TWD166703S (en) light emitting diode crystal
TWD166702S (en) light emitting diode crystal
TWD173073S (en) Portion of light emitting diode package
TWD176421S (en) Portion of light emitting diode package substrate
TWD170854S (en) Part of light emitting diode filament
TWM475703U (en) Organic light emitting diode
TWD163758S (en) Semiconductor light emitting device
TWD163756S (en) Semiconductor light emitting device
TW201613140A (en) Semiconductor light emitting device and light emitting apparatus
TWD163759S (en) Semiconductor light emitting device
TWD173703S (en) Portion of light emitting diode moudle
TWD175100S (en) Light emitting diode package
TWD168809S (en) Part of light emitting diode filament
TWD168811S (en) Part of light emitting diode filament
TWD170853S (en) Part of light emitting diode filament