593124 五、發明說明（l) 【發明的應用範圍】 本發明是關於一種懸浮微結構及其製造方法，特別是 關於一種應用於紅外線成像器與感測器之懸浮微結構及其 製造方法。 【發明的背景】 積體電路技術發展初期，即已有人利用犧牲層技術來 製作碎基微結構。後來則逐漸發展出以犧牲層的觀念製作 懸浮微結構；犧牲層的觀念被廣泛地應用在面型加工技術 (Surface Micromachining)等微機電系統製程發展上。 紅外線感測器係偵測紅外線（波長〇· 7〜1〇〇〇 Vm)電磁 波之元件，基本物理機制為利用材料特性隨入射紅外線或 熱幅射而改k的性質做為偵測紅外線或熱幅射的指標。在 製作紅外線感測器與成像器之懸浮微結構的製程中y可以 運用犧牲層 構。但是， 對某些犧牲 可能造成犧 浮微結構容 各種方法以 號為3 6 1 3 6 ) 方式使支撐 接。在懸浮 構所產生的 為了避 的方法來製造具有紅外線感測材料之懸浮微結 犧牲層厚度的控制會對懸浮微結構造成影響， 層材料而§ ’如犧牲層太厚（約大於2微米）， 牲層剝落，犧牲層太薄（小於丨微米）則會使懸 易接觸到基板。目前大部分的製程皆必需使^ 避免這些問題。如美國第53 0 0 9 1 5 (再發證案 號專利中所述之懸浮微結構，係以對角線的 =浮微結構的一對接腳和基板的接觸點加以連 ，結構離基板的距離很小的時候，此懸浮微結 -力谷易使懸洋微結構彎曲而接觸到基板。 免懸浮微結構彎曲並與基板接觸，美國第593124 5. Description of the invention (l) [Scope of application of the invention] The present invention relates to a suspension microstructure and a manufacturing method thereof, and particularly to a suspension microstructure applied to an infrared imager and a sensor and a manufacturing method thereof. [Background of the Invention] In the early days of the development of integrated circuit technology, some people have used sacrificial layer technology to make broken microstructures. Later, the concept of sacrificial layers was gradually developed to make suspended microstructures; the concept of sacrificial layers was widely used in the development of micro-electromechanical system processes such as surface micromachining. Infrared sensor is a component that detects infrared (wavelength 0.7 ~ 1000Vm) electromagnetic waves. The basic physical mechanism is to use the characteristics of the material to change the nature of k with incident infrared or thermal radiation to detect infrared or heat. Radiation indicator. In the manufacturing process of the suspended microstructure of the infrared sensor and the imager, a sacrificial layer can be used. However, some sacrifice may cause sacrifice of floating microstructure capacity. Various methods connect the support with the number 3 6 1 3 6). The control of the thickness of the sacrificial layer of the suspended microjunction with infrared sensing material produced in the suspended structure to avoid the influence of the thickness of the suspended microstructure on the layer material and § 'If the sacrificial layer is too thick (about 2 microns) If the sacrificial layer is peeled off, the sacrificial layer is too thin (less than 丨 micron), so that the suspension can easily contact the substrate. Most current processes must avoid these problems. For example, the suspension microstructure described in US Patent No. 53 0 9 1 5 (Re-issued patent) is connected by a pair of pins with a diagonal = floating microstructure and the contact points of the substrate. When the distance is small, this suspended microjunction-Ligu easily bends the suspended ocean microstructure and contacts the substrate. Free of suspended suspended microstructures and contact with the substrate.
593124 五、發明說明（2) 62 624 1 7號專利提出了 一種使懸浮微結構保持平行於基板 的紅外線感測器。同樣以對角線的方式使支撐懸浮微結構 的一對接腳和基板的接觸點加以連接，再透過接腳的特殊 設計來使懸浮微結構保持平行。其接腳支撐懸浮微結構的 懸’。卩分係為一雙層結構（b丨m 〇 r P h )，雙層結構間所產生 的應力差異會使懸臂產生一定程度的微翹曲；因此，將懸 臂分為内部區域和外部區域，其外部區域和内部區域於反 方向么別產生的微翹曲角度將達成平衡。使懸臂和懸浮微 結構的銜接點能平行於基板，進而使懸浮微結構與基板保 持平行。然而，這種結構需要精密的加工技術來劃分懸臂 的内外區域，同時增加了製造上的難度。 【發明之目的與概述】 繁於以上習知技術的問題，本發明的目的在於提供一 種應用於紅外線成像器與感測器之懸浮微結構及其製造方 法。將支撐懸浮微結構的一對接腳形成於同一側，並以雙 層或多層結構製造懸臂，即可利用雙層或多層結構間的應 力差使懸臂形成向上翹曲。可確保懸浮微結構不會與基板 產生接觸，由於懸臂係向上產生微翹曲，能使犧牲層厚度 小至約1微米。因此，可應用現有之互補式金氧半導體製 程（Complementary Metal Oxide Semiconductor， CMOS) 來進行量產，尤其可以運用半導體製程中的金屬層作為犧 牲層，使製程簡化；自然有助於降低設備和製造的成本。 為達上述目的’本發明所提供之應用於紅外線成像器 與感測器之懸浮微結構’包含有··一基板，其具有提供電593124 V. Description of Invention (2) 62 624 1 Patent No. 7 proposes an infrared sensor that keeps the suspended microstructure parallel to the substrate. Similarly, a pair of pins supporting the suspended microstructure are connected diagonally to the contact points of the substrate, and the special design of the pins is used to keep the suspended microstructure parallel. Its pins support the suspension of the suspended microstructure. The unitary system is a double-layered structure (b 丨 m οr Ph), and the difference in stress between the double-layered structures will cause the cantilever to slightly warp; therefore, the cantilever is divided into an inner area and an outer area. The micro-warping angles generated by the outer and inner regions in the opposite direction will reach a balance. The interface between the cantilever and the suspended microstructure can be parallel to the substrate, and the suspended microstructure and the substrate can be kept parallel. However, this structure requires precise machining technology to divide the inner and outer areas of the cantilever, and at the same time increases the difficulty in manufacturing. [Objective and Summary of the Invention] The problems of the conventional technology, the object of the present invention is to provide a suspension microstructure applied to an infrared imager and a sensor, and a manufacturing method thereof. By forming a pair of pins supporting the suspended microstructure on the same side, and manufacturing a cantilever with a two-layer or multi-layer structure, the stress difference between the two-layer or multi-layer structure can be used to warp the cantilever upward. It can ensure that the suspended microstructure does not come into contact with the substrate. The micro-warping of the cantilever system can make the thickness of the sacrificial layer as small as about 1 micron. Therefore, the existing complementary metal oxide semiconductor (CMOS) process can be applied for mass production. In particular, the metal layer in the semiconductor process can be used as a sacrificial layer to simplify the process; naturally, it can help reduce equipment and manufacturing. the cost of. To achieve the above-mentioned object, the “suspended microstructure applied to the infrared imager and the sensor” provided by the present invention includes a substrate, which has a power supply
593124 五、發明說明（3) =$通之金屬電極與紅外線訊號讀取電路； #係連接於基板之金屬電極，此對同側接 部分，此懸臂係由雙層或多層結構所形 1多層結構間的應力差使懸臂形成向上翹曲 :、、、、广層、。構，則上層結構係拉應力，通常使 做為感測材料之電極）；下層結構係壓應 ^電材料；以及一懸浮微結構，係連接於同 上’亚稭由此同侧接腳與懸臂支撐來懸浮於 ，接腳係位於同側且懸臂呈現向上翹曲狀， 微結構能懸浮於基板表面。593124 V. Description of the invention (3) = Metal electrode and infrared signal reading circuit of $ 通; #Metal electrode connected to the substrate, the pair of same-side connection parts, this cantilever is formed by a double-layer or multilayer structure 1 multilayer The difference in stress between the structures causes the cantilever to warp upwards: ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,- Structure, the upper structure is tensile stress, which is usually used as an electrode of the sensing material); the lower structure is a compression material; and a suspended microstructure is connected to the same side of the same sub-pin and cantilever The support comes to suspend, the pins are located on the same side and the cantilever is warped upward, and the microstructure can be suspended on the surface of the substrate.
…本發明更提供一種應用於紅外線成像器 洋微結構製造方法；可配合現有之互補式金 j設備來製造上述之微結構。其步驟包含有 —，板，其表面係具有電極金屬與紅外線訊 定義另一金屬電極層形成金屬電極和犧牲層 和犧牲層表面形成介電層，其介電層並於金 ^開口，在金屬電極和介電層表面沉積 為感測材料之電極），與紅外線感測材料層、 沉積並定義紅外線吸收層；定義紅外 3 f 一對同側接腳及懸臂，此懸臂係由介 戶:：成的雙層或多層結構所形成，且金屬層 ::連接；乡工外線感測微結構則連接於該 ^卩，去除預先定義於基板表面之犧牲層 感測微結構及其同侧之懸臂與接腳，同U 一對同侧接 腳各連結有一 成，藉由雙層 狀，例如，若 用金屬材料 力’通常使用 側接腳的懸臂 基板表面，由 得以確保懸浮 與感測器之懸 氧半導體製程 :首先，提供 號讀取電路； •’於金屬電極 屬電極的頂端 一金屬層（做 、介電層，也 線咸測懸浮微 電層和金屬層 與金屬電極達 對同側之懸臂 :釋放紅外線 由雙層或多層… The present invention further provides a method for manufacturing an infrared imager microstructure; it can be used with existing complementary gold j equipment to manufacture the above microstructure. The steps include-, a plate, the surface of which has an electrode metal and infrared signal to define another metal electrode layer to form a metal electrode and a sacrificial layer and a dielectric layer on the surface of the sacrificial layer. The surface of the electrode and dielectric layer is deposited as the electrode of the sensing material), and the infrared sensing material layer is deposited and defines the infrared absorbing layer; the infrared 3 f pair of pins and cantilever on the same side are defined, this cantilever is made by the user :: 成Formed by a double-layer or multi-layer structure, and a metal layer :: connection; a rural labor external sensing microstructure is connected to the ^ 该, removing the sacrificial layer sensing microstructure previously defined on the substrate surface and the cantilever and Pins, one pair of U-side pins on the same side, with a double layer, for example, if a metal material is used to force the surface of the cantilever substrate of the side pins, the suspension and the suspension of the sensor can be ensured. Oxygen semiconductor manufacturing process: First, provide the number reading circuit; • a metal layer on the top of the metal electrode (a dielectric layer, a dielectric layer, and a suspended microelectric layer and a metal layer and a metal electrode) Cantilever on the same side: release infrared rays by double or multiple layers
第6頁 593124 五、發明說明（4) 的應力差異使懸臂產生向上微 空成為懸浮微結構。 曲進而使微結構懸 其中，由於本發明的結構特+ 1微米左右，可直接利用互補式寺:氧使半犧二^ 電極層來作為犧牲層’即可節省 犧肚衣程中的金屬 程的步驟。 衣作犧牲層以及光微影製 有關本發明的特徵與實作，兹 砰細說明如下： 口 |忭取佳貝施例 【較佳實施例說明】 含請”，圖’其為本發明實施例之結構示意圖，包 基板10，其具有提供電性導通之金屬電極11 · 一 ，係、對應連接於該對金屬電如以達成電i 7通’輯同側接卿係具有—懸臂21，係由上q 層所組成的雙層結構’藉由雙層結構間的應； &成向上翹曲狀；以及—懸浮微結構3〇，其中^ ^紅外線感測材料，懸浮微結構3 0係經由懸臂2 1連接於 ^接腳20並藉由此同側接腳2〇的支撐來懸浮於基板1〇表 ，由於接腳20係位於同侧且懸臂21呈現向上翹曲狀，得 Μ確保懸浮微結構30能懸浮於基板1〇表面。其中，接人於 基板的接腳結構，請參考第2圖，其為本發明實施例之^接、 腳與懸臂結構示意圖。接腳2〇係對應連接於基板上的金屬 電極11以達成電性導通，其同侧接腳20係包含有一懸臂 2 1、’在此圖中係由上層金屬層23和下層介電層22所組成的 雙層結構所形成，上層金屬層2 3係作為拉應力層，下層介 593124 五、發明說明（5) 電層22則作為壓應力層，使懸臂2〗呈現向上翹曲的形狀。 本發明所提供之懸浮微結構的懸臂可由上層金屬層和 下層介電層所組成的雙層結構或是上層介電層、中層金 層與下層介電層所紐成的多層結構來形成，·藉由雙^ 層結構間的應力差使其產生向上微翹曲的特性，因^能運 用小於]微米的犧牲層來製造懸浮微。 ;選=鉻氣化I伽金屬；介電層=二 擇虱化矽、、氧化矽或是氮化矽。尤1 導體製程中的金屬電極層來作 思、·*〜用現有之半 簡化紅外線成像器蛊感測哭縣/自，如此’即可大量 可節省製程設備的成W微結構製程步驟，同時 浮微了;二:；外線成像器與感… 及設備來製造上述之微結構。；式金氧半導體製程 實施例的製作流程圖，其步驟勺i亏弟d圖，其為本發明 電極與電路之基板（步驟110) 有、，·+首先，提供包含有 形成金屬電極和犧牲層（步驟120"L檟義—金屬電極層 基板達成電路導通；再於金屬帝’/、金屬電極係用以與 層（步驟130)，其介電層並於金y·和犧牲層表面形成介電 口；在金屬電極和介電声 包,°勺頂端形成一開 1 40 )，以做為感測材料二電極T =〒疋義一金屬層（步驟 結構（步驟150);定義懸臂與’H包含感測材料之微 之微結構（1 6 0 );最後，去除 :了&義包含感測材料 層釋放微結構及其同側之懸、、定義於基板表面之犧牲 ，、接腳U形成懸浮微結構 593124 五、發明說明（6) (步驟1 7 0 )，藉由同侧懸臂之雙層或多層結構的應力差異 使懸臂產生向上微翹曲，進而使微結構懸空成為懸浮微結 構。 【發明功效】 本發明結構上之重要特點為利用微翹曲的同側懸臂來 支撐懸浮微結構，使得用以製造懸浮微結構的犧牲層厚度 能降低至1微米左右。進而能配合現有之互補式金氧半導 體製程及設備來製造上述之微結構；利用互補式金氧半導 體製程來製作懸浮微結構的優點是：可直接利用國内半導 體廠的製程設備從事研究製造，大大的減低設備的投資及 維護費用。 、 一般工業標準的互補式金氧半導體製程主要是用來製 作積體電路（1C)晶片，而非用來製作微感測器等微懸浮結 構。因此，在工業標準的互補式金氧半導體製程中，除 製作廠商願意更改其製造程序及參數，否則各種薄膜的沉 積（deposition)順序、材質及厚度都是固定不變的。、/ 以，利用工業標準的互補式金氧半導體製程來製作應 紅外線成像器與感測器之微懸浮結構，將受到其桿^制作 程序和參數的限制，因此在整個設計過 須將= 種的限制因辛者詹推本 ，^ ^ 肩將每些種 至Λ Ρ Λ 發明可降低絲層的厚度 屬電極層來作為犧牲層。並在不需更改：二二 運用P〇Sltl〇n)順序、材質及厚度的情形下， 用見有的互補式金氧半導體製程來製作應用於紅外線成Page 6 593124 V. Description of the invention (4) The difference in stress caused the cantilever to generate upward microspace and become a suspended microstructure. The curved structure further suspends the microstructure. Because the structure of the present invention is about + 1 micron, the complementary type can be directly used: oxygen makes the semi-sacrifice electrode layer as a sacrificial layer, which can save the metal process in the sacrificial process. A step of. The clothing sacrificial layer and the photolithography system are related to the features and implementation of the present invention, which are described in detail as follows: 口 | Schematic diagram of the example, the package substrate 10 has a metal electrode 11 providing electrical continuity. First, it is connected to the pair of metal electricity such as to achieve electricity i 7 through the same side connection system has-cantilever 21, It is a double-layered structure composed of upper q layers through the application of the double-layered structure; & warping upwards; and-suspension microstructure 30, of which ^ infrared sensing material, suspension microstructure 30 It is connected to the ^ pin 20 via the cantilever 21 and is suspended on the substrate 10 by the support of the pin 20 on the same side. Since the pin 20 is located on the same side and the cantilever 21 is warped upward, M Ensure that the suspended microstructure 30 can be suspended on the surface of the substrate 10. Among them, for the pin structure connected to the substrate, please refer to FIG. 2, which is a schematic diagram of the structure of the pin, cantilever and cantilever according to the embodiment of the present invention. Pin 2 Corresponding to the metal electrode 11 connected to the substrate to achieve electrical conduction, the same The pin 20 includes a cantilever 21 1. In this figure, it is formed by a double-layer structure composed of an upper metal layer 23 and a lower dielectric layer 22, and the upper metal layer 23 is used as a tensile stress layer, and the lower layer 593124 V. Description of the invention (5) The electric layer 22 is used as a compressive stress layer, so that the cantilever 2 has an upwardly warped shape. The cantilever of the suspension microstructure provided by the present invention can be composed of an upper metal layer and a lower dielectric layer. Layer structure or a multilayer structure formed by an upper dielectric layer, a middle gold layer and a lower dielectric layer, and the upward micro-warpage characteristic is caused by the stress difference between the double-layer structures, which can be used Less than] micron sacrificial layer to make suspended micro .; select = chromium gasification I gamma metal; dielectric layer = dichroic silicon, silicon oxide or silicon nitride. Especially 1 metal electrode layer in conductor process Thinking, · * ~ Using the existing semi-simplified infrared imager to sense the crying county / self, so that 'a large number of W microstructure processing steps that can save process equipment can be saved at the same time; two :; outside line imager And sense ... and equipment to make the above microstructures; The fabrication flow chart of the metal-oxide semiconductor process embodiment is shown in the following steps. It is a substrate for electrodes and circuits of the present invention (step 110). First, provide a layer including a metal electrode and a sacrificial layer ( Step 120 " L 槚 Yi-metal electrode layer substrate to achieve circuit continuity; and the metal electrode '/, metal electrode system and layer (step 130), the dielectric layer and a dielectric layer on the surface of the gold y · and the sacrificial layer to form a dielectric口; forming an opening 1 40 on the top of the metal electrode and the dielectric acoustic package, as a sensing material, two electrodes T = a meaning of a metal layer (step structure (step 150); defining the cantilever and 'H contains The micro-structure of the sensing material (160); finally, removed: the & meaning includes the release of the micro-structure of the sensing material layer and its suspension on the same side, the sacrifice defined on the substrate surface, and the pin U formation Suspension microstructure 593124 V. Description of the invention (6) (Step 170) The cantilever is slightly warped upward due to the difference in stress of the double-layer or multi-layer structure of the cantilever on the same side, and the microstructure is suspended to become a suspension microstructure. [Effect of the invention] An important feature of the structure of the present invention is to use a micro-warped cantilever on the same side to support the suspended microstructure, so that the thickness of the sacrificial layer used to manufacture the suspended microstructure can be reduced to about 1 micron. Furthermore, it can cooperate with the existing complementary metal-oxide-semiconductor manufacturing process and equipment to manufacture the above-mentioned microstructures; the advantages of using the complementary metal-oxide-semiconductor manufacturing process to produce suspended microstructures are: directly using domestic semiconductor plant process equipment for research and manufacturing, Greatly reduce equipment investment and maintenance costs. The general industry standard complementary metal-oxide-semiconductor manufacturing process is mainly used to manufacture integrated circuit (1C) chips, rather than micro-suspension structures such as micro-sensors. Therefore, in the industry-standard complementary metal-oxide-semiconductor manufacturing process, unless the manufacturer is willing to change its manufacturing procedures and parameters, the deposition order, material, and thickness of various films are fixed. 、 / In order to use the industry-standard complementary metal-oxide-semiconductor manufacturing process to make micro-suspension structures for infrared imagers and sensors, they will be limited by their production procedures and parameters. Therefore, the entire design must be The limitation is due to Zhan Zhan's introduction, ^ ^ Should each of these kinds be reduced to Λ ρ Λ invention can reduce the thickness of the silk layer belongs to the electrode layer as a sacrificial layer. And without the need to change: 22 using P0Slt10n) sequence, material and thickness, the complementary metal oxide semiconductor process can be used to produce infrared applications.
593124 五、發明說明（7) 像器與感測器之懸浮微結構。 雖然本發明之較佳實施例揭露如上所述，然其並非用 以限定本發明，任何熟習相關技藝者，在不脫離本發明之 精神和範圍内，當可作些許之更動與潤飾，因此本發明之 專利保護範圍須視本說明書所附之申請專利範圍所界定者 為準。593124 V. Description of the invention (7) Suspension microstructure of the camera and sensor. Although the preferred embodiment of the present invention is disclosed as described above, it is not intended to limit the present invention. Any person skilled in the related art can make some changes and retouching without departing from the spirit and scope of the present invention. The patent protection scope of the invention shall be determined by the scope of the patent application scope attached to this specification.
第10頁 593124 圖式簡單說明 第1圖為本發明實施例之結構示意圖； 及 第2圖為本發明實施例之接腳與懸臂結構示意圖 第3圖為本發明實施例的製作流程圖。 【圖式符號說明】 10 基板 11 金屬電極 20 接腳 21 懸臂 22 下層介電層 23 上層金屬層 30 懸浮微結構 #Page 10 593124 Brief description of the drawings Figure 1 is a schematic diagram of the structure of the embodiment of the present invention; and Figure 2 is a schematic diagram of the pins and cantilever structure of the embodiment of the present invention. Figure 3 is a manufacturing flowchart of the embodiment of the present invention. [Illustration of Symbols] 10 substrate 11 metal electrode 20 pin 21 cantilever 22 lower dielectric layer 23 upper metal layer 30 suspension microstructure #
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