591277 五、發明說明（1) 本發明是有關於一種電容器（C a p a c i t 〇 r )結構，且特 別是有關於一種用於薄膜電晶體液晶顯示器（Th i n F i 1 m591277 V. Description of the invention (1) The present invention relates to a capacitor (C a p a c i t 〇 r) structure, and more particularly to a capacitor for thin film transistor liquid crystal display (Th i n F i 1 m
Transistor-Liquid Crystal Display，TFT-LCD)之晝素 儲存電容器結構。 薄膜電晶體液晶顯示器主要由薄膜電晶體陣列基板、 A色濾光陣列基板和液晶層所構成，其中薄膜電晶體陣列 基板是由多個以陣列排列之薄膜電晶體，以及與每一薄膜 電曰曰體對應配置之晝素電極（Pixel Electrode)所組成。 而上述之薄膜電晶體包括閘極、源極與汲極，其係用來作 為液晶顯示單元的開關元件。 溥膜電晶體元件的操作原理與傳統的半導體元件 類似，都是具有三個端子（閘極、源極以及汲極）的元件， 通¥ 4膜電晶體元件有非晶石夕與多晶石夕材質兩類，而其中 非晶矽薄膜電晶體屬於較為成熟之技術。而在製作薄膜電 晶體的過程中，通常會同時製作儲存電容器，以用來作為 電荷寫入。 第1圖所示，其繪示為習知一畫素結構之上視圖；第2 圖所示，其繪示為第1圖中之儲存電容器由，之剖面示 意圖。 請同時參照第1圖與第2圖，一畫素結構係由一掃瞄配 線1 0 2與一資料配線1 〇 4控制，且此畫素結構包括一薄膜電 曰曰體106、一畫素電極118以及一儲存電容。 其中薄膜電晶體1 〇 6之源極1 〇 5係與資料配線1 〇 4電性 連接’薄膜電晶體1 0 6之閘極1 〇 3係與掃目苗配線1 〇 2電性連Transistor-Liquid Crystal Display (TFT-LCD) daylight storage capacitor structure. The thin film transistor liquid crystal display is mainly composed of a thin film transistor array substrate, an A-color filter array substrate, and a liquid crystal layer. The thin film transistor array substrate is composed of a plurality of thin film transistors arranged in an array, and It consists of a pixel electrode that is arranged correspondingly to the body. The above thin film transistor includes a gate electrode, a source electrode, and a drain electrode, which are used as switching elements of a liquid crystal display unit. The operation principle of 溥 membrane transistor is similar to that of traditional semiconductor devices. They are three-terminal (gate, source, and drain) elements. There are four types of membrane transistors: amorphous and polycrystalline. There are two types of materials, and amorphous silicon thin film transistors are more mature technologies. In the process of making a thin film transistor, a storage capacitor is usually made at the same time for writing as a charge. As shown in FIG. 1, it is a top view of a known pixel structure. As shown in FIG. 2, it is a cross-section of the storage capacitor in FIG. Please refer to FIG. 1 and FIG. 2 at the same time. A pixel structure is controlled by a scanning wiring 102 and a data wiring 104, and the pixel structure includes a thin-film electric body 106 and a pixel electrode. 118 and a storage capacitor. Among them, the source of the thin film transistor 106 is electrically connected to the data wiring 1 and is electrically connected to the gate electrode of the thin film transistor 106 and the wiring is electrically connected to the scanning wire 1 0.
8177twf.ptd 第4頁 591277 五、發明說明（2) 接，而薄膜電晶體1 0 6之源極1 〇 7係與一畫素電極丨1 8電性 連接。畫素電極11 8係對應薄膜電晶體1 〇 6配置。而儲存電 容器108係配置在畫素電極jig之下方。 習知一晝素結構中之儲存電容器丨〇 8係利用^共用配 線（Common Li ne)l 10以及覆蓋在部分共用配線η〇上之— 導電層11 2以形成一儲存電容。其中共用配線丨丨〇係為於形 成掃瞄配線102與閘極1〇7時所同時形成的一部份，其係作 為儲存電容器108之下電極。導電層112係為於形成資料配 線104與源極/汲極103、1〇7時所同時形成的一部份，其 作為儲存電容器1 0 8之上電極。 ' ☆此外，在共用配線11 〇與導電層112之間更配置有一電 :二？層111 ’其係為於形成薄膜電晶體1 0 6之閘絕緣層時 二2形成的κ分。而在導電層112上則是覆蓋有一保才 θ /在保痩層1 1 4中更包括形成有-開口 1 1 6，其中 開口 1 1 6係暴露出導電層1彳？ 达 八 1 “ p + n + 1 2其係用來使配置在保護層 114上之晝素電極118能與導電層U2電性連接。 然而，倘若儲存雷&盟〇 容介電層⑴品質不佳或"Vi他=料配線10 4之間因為電 器108與資料配線104之/他I程因素，導致儲存電容 構產4古黜缺P々，間舍生短路時，將會使得此書辛社 構產生π點缺陷 '然而，對於習 -京、、口 計，當儲存電容器1 08鱼資 子電合斋π構之設 党點缺陷時，將無法對其進行修補。纟纟^路而產生 因此，本發明的目 結構，當儲存電容器與資料：生!電容器 玍短路而導致亮點缺陷 mu 8l77twf.ptd 第5頁 591277 五、發明說明（3) 時，仍可以利用雷射修 々' 本發明的另一目的e #式對其進行修補。 =與資料配線發生短路二=二種畫素結構，當館存電容 ^補，以使畫素仍能正常冗點缺陷時，能輕易的將其 點比率。 Φ運作，進而提升顯示面板之零亮 書辛本：明提出-種畫素儲存電容哭社 —素且此晝素係配置在一谷时、、，°構，其係對應於一 =鄰的二資料配線之間。此二^，相鄰的二掃目苗配線與 電極、-上電極以及配：：儲存電容器結構包括—下 ::層1中下電極係配置於=下電極之間之-電容 。與連接於耦合部兩端之數：且下電極係由-耦 ’而此數個分支結構係位於ς ( ranch)結構所構 ::配線彼此交錯（Cross)配置。、電十斗容配線之下方，+並且與資 D之上。而上電極係配置於介 "“曰係覆蓋於下電 :下電極之耦合部配置。此外，：金土’且上電極係對應 匕括—保護層，其係覆蓋於 :儲存電容器結構更 有-開口並暴露出上電極：其中保護層中具 之一晝素電極能藉由此開口盥上、配置於保護層上方 :存電容器與資料配線發生短4極。當此晝素 素儲存電容器中發生短路之分支社 j用每射切除此畫 發生；路之分支結構仍可使此畫；^正後，未 本發明提出-種晝素結構，其：：之運作。 郴的二掃瞄配線與相鄰的二唆之 基板上之相 括-薄膜電晶體、一畫素結構以及己此畫素結構包 儲存電容器。其中此 第6頁 8l77twf.ptd 591277 五、發明說明（4) ---- 薄膜電晶體係由其中一掃瞄配線與其中一 晝素電極係對應薄膜電晶體配置。而儲存電—t控制。 晝素電極之下方，儲存電容器包括一下電極置在 及配置在下電極與上電極之間之一電容介電層。复I極以 極係配置在基板上，且下電極係由一耦合部盥ς下電 部兩端之數個分支結構所構成，而數個分支二^於耦合 方，Μ且與資料配線彼此交錯配▲。電a , 里於下電極之上。而上電極係配置在電容介 且上電極係對應下電極之耦合部 Υ曰 層令ΐϋί —保護層，覆蓋於上電極之上，其中此保護 辛電^ ί Γ 並暴露出上電極，其係用來使上電極虚查 I電極電性連接。者 σ 个從丄电位興旦 時，可利用+ Μ + ^ 褚存電合态與貧料配線發生短路 處。在刀Π存電容器中發生短路之分支結構 構維持正常之運作。务生紐路之分支結構仍可使此畫素結 本發明之畫素儲存電士 生時，可利用雷射修補的ϋ冓之設計，當亮點缺陷發 储存電容器有無法修補=除，因此，可改善習知之 本發明之晝素結構， 之數個分支結構的設於其儲存電容器之下電極兩端 =射修補的方式切除，以^§發生亮點缺陷時，可利用 提升面板之零亮點率。旦素結構仍能正常運作，進而 為讓本發明之上 顯易懂’下文特舉一車二二，目的、特徵、和優點能更明 貝施例，並配合所附圖式，作詳 8l77twf.ptd 591277 五、發明說明（5) 細說明如下： 圖式之標示說明： 1 0 0、2 0 0 :晝素結構 1 0 2、2 0 2 :掃瞄配線 1 0 3、2 0 3 :閘極 1 0 4、2 0 4 :資料配線 1 0 5、2 0 5 :源極 1 0 6、2 0 6 :薄膜電晶體 1 0 7、2 0 7 :汲極 I 0 8、2 0 8 :儲存電容器 II 0、2 1 0 :共用配線（下電極） 11 1、21 1 :介電層 112、212 :導電層（上電極） I 1 4、2 1 4 :保護層 II 6、2 1 6 :開口 118、218:晝素電極 實施例 第3圖，其繪示為依照本發明一較佳實施例之一晝素 結構之上視圖；第4圖所示，其繪示為第3圖中之儲存電容 器結構由I I至I I ’之剖面示意圖。 請同時參照第3圖與第4圖，本發明之畫素結構係由一 掃瞄配線2 0 2與一資料配線2 0 4控制，且此晝素結構包括一 薄膜電晶體20 6、一晝素電極218以及一儲存電容器2 08。 其中薄膜電晶體2 0 6之源極2 0 5係與資料配線204電性8177twf.ptd Page 4 591277 V. Description of the invention (2) The thin-film transistor 106 source 1 107 is electrically connected to a pixel electrode 1-8. The pixel electrode 118 is arranged corresponding to the thin film transistor 106. The storage capacitor 108 is disposed below the pixel electrode jig. A conventional storage capacitor in a day-to-day structure uses a common wiring 10 and a conductive layer 112 covering a portion of the common wiring η〇 to form a storage capacitor. The common wiring is a part formed at the same time as the scan wiring 102 and the gate 107 are formed, and it serves as the lower electrode of the storage capacitor 108. The conductive layer 112 is a part formed at the same time when the data wiring 104 and the source / drain electrodes 103 and 107 are formed, and serves as an electrode on the storage capacitor 108. '☆ In addition, there is a power supply between the common wiring 11 〇 and the conductive layer 112: two? The layer 111 'is a κ component formed when the gate insulating layer of the thin film transistor 106 is formed. And the conductive layer 112 is covered with a protection layer θ / the protection layer 1 1 4 further includes-openings 1 1 6, where the openings 1 1 6 expose the conductive layer 1 彳? Up to 8 "p + n + 1 2 It is used to make the day element electrode 118 disposed on the protective layer 114 be electrically connected to the conductive layer U2. However, if the storage ray & Poor or " Vi = = wiring between material 10 and 10 due to electrical and electronic wiring 108 and data wiring 104 / other factors, resulting in storage capacitor structure 4 lack of P, when a short circuit occurs, this will make this Shuxin Society structure produces π-point defects' However, for Xi-Beijing, and Gongji, when the storage capacitors of 108 Yuzizidianhezhai structure are set up, they cannot be repaired. 纟 纟 ^ Therefore, the objective structure of the present invention, when storing capacitors and data: capacitors short circuit and cause bright spot defects mu 8l77twf.ptd page 5 591277 5. Invention description (3), you can still use laser repair 'Another purpose of the present invention is to repair it using the formula #. = Short-circuit with the data wiring. Two = Two pixel structures. When the storage capacitor of the library is compensated so that the pixels can still be normally redundant, it can be easily removed. The ratio of its points. Φ operation, and then improve the display panel of the zero bright book Xin Ming: Ming The output-type pixel storage capacitor is crying. The element is arranged in a valley, and the structure corresponds to the two data wirings of one = adjacent. The two ^, adjacent two-scan Memiao wiring and electrodes,-upper electrode and distribution :: storage capacitor structure includes-lower :: layer 1 in the lower electrode is arranged between = lower electrode-capacitance. And the number connected to both ends of the coupling part: and lower The electrode system is -coupled, and these branch structures are located in a ranch structure :: the wiring is arranged in a cross configuration. The electrical wiring is below the electrical wiring, the + is above the asset D. The electrode system is arranged in the medium " "It is covered in the power down: the coupling part of the lower electrode is arranged. In addition, the "golden soil" and the upper electrode system correspond to a protective layer, which covers: the storage capacitor structure has an opening and exposes the upper electrode: one of the protective layers in the protective layer can pass through this opening Lay it on and place it on top of the protective layer: the storage capacitor and data wiring are short 4 poles. When the short-circuited branch of the celestin storage capacitor is cut off with each shot, the branch structure of the road can still make the painting; after the positive, the present invention does not propose a kind of celestial structure, which is: Operation. The scan line of the second scan line on the substrate of the second scan line includes a thin film transistor, a pixel structure, and the pixel structure including the storage capacitor. Among them, this page 8l77twf.ptd 591277 V. Description of the invention (4) ---- The thin film transistor system is configured by one of the scanning wirings and one of the thin film electrode systems corresponding to the thin film transistor system. And stored electricity-t control. Below the day electrode, the storage capacitor includes a capacitive dielectric layer with the lower electrode disposed between and disposed between the lower electrode and the upper electrode. The complex I pole is arranged on the substrate in a polar system, and the lower electrode system is composed of a plurality of branch structures at both ends of a coupling section and a lower power section, and the plurality of branches are coupled to the coupling side, and M and the data wiring are connected to each other. Staggered ▲. Electric a is inside the lower electrode. The upper electrode is arranged on the capacitor and the upper electrode corresponds to the coupling portion of the lower electrode. The protective layer covers the upper electrode, where the protective electrode is exposed and the upper electrode is exposed. Used to make the upper electrode falsely check the I electrode's electrical connection. When σ rises from the pseudo potential, + M + ^ can be used to make a short circuit with the lean wiring. The short-circuited branch structure in the storage capacitor maintains normal operation. The branch structure of Wusheng New Road can still make this pixel structure. When the pixel of the present invention is stored in electricity, you can use the laser repairing design. When the bright spot defect occurs, the storage capacitor cannot be repaired. Therefore, The conventional daylight structure of the present invention can be improved. Several branches of the structure are disposed under the storage capacitor, and the two ends of the electrode are cut off. In the case of a bright spot defect, the zero bright spot rate of the panel can be improved. . The dentin structure can still work normally, so as to make the present invention easier to understand. 'The following is a description of the car, the purpose, characteristics, and advantages can be more clearly illustrated, and with the accompanying drawings, detailed 8l77twf .ptd 591277 V. Description of the invention (5) The detailed description is as follows: Symbols of the drawings: 1 0 0, 2 0 0: daytime structure 1 0 2, 2 0 2: scanning wiring 1 0 3, 2 0 3: Gate 1 0 4, 2 0 4: Data wiring 1 0 5, 2 0 5: Source 1 0 6, 2 0 6: Thin film transistor 1 0 7, 2 0 7: Drain I 0 8, 2 0 8 : Storage capacitor II 0, 2 1 0: Common wiring (lower electrode) 11 1, 21 1: Dielectric layer 112, 212: Conductive layer (upper electrode) I 1 4, 2 1 4: Protective layer II 6, 2 1 6: Openings 118, 218: FIG. 3 of the embodiment of the day element electrode, which is shown as a top view of the day element structure according to a preferred embodiment of the present invention; FIG. 4 shows that it is shown as FIG. 3 The schematic diagram of the cross section of the storage capacitor structure from II to II '. Please refer to FIG. 3 and FIG. 4 at the same time. The pixel structure of the present invention is controlled by a scanning wiring 202 and a data wiring 204, and the daylight structure includes a thin film transistor 20 6 and a daylight pixel. The electrode 218 and a storage capacitor 208. The source of the thin film transistor 2 0 5 and the data wiring 204 are electrically
8177twf.ptd 第8頁 591277 五、發明說明（6) --------- 5妾而:ί 3 :曰曰體2〇6之閘極203係與掃瞄配線202電性連 Γ 體206之汲極207係與晝素電極218電性ΐ :妾，構218係對應於薄膜電晶 218之下方。 儲存電谷态208係配置在晝素電極 9^，明之畫素結構中之儲存電容器208係利用一共用 配線21 0以及覆蓋扁卹八以扣 ^ 々用 成一儲存雷衮在/刀共用配線210上之導電層212以形8177twf.ptd Page 8 591277 V. Description of the invention (6) --------- 5 妾: ί 3: The gate 203 of the body 2 06 is electrically connected to the scanning wiring 202Γ The drain electrode 207 of the body 206 and the day electrode 218 are electrically ΐ: 妾, and the structure 218 corresponds to below the thin film transistor 218. The storage state 208 is arranged on the day element electrode 9 ^, and the storage capacitor 208 in the bright pixel structure uses a common wiring 21 0 and covers the flat shirt to buckle ^ 々 is used as a storage lightning 衮 / knife common wiring 210 The conductive layer 212 is shaped like
Lit, 共用配線210係為於形成掃目苗配線202 =極203時所同時形成的一部份，其材質 咖 =配咖係作為儲存電容器2〇8之下電極。導電二 資料配線204與源極"及極2〇5、2 ; 念的-部份，其材質例如為金 门:形 電容器208之上電極。 竹作马儲存 接發明之共用配線210係由-叙合部21〇a與連 耦σ。卩210a兩端之數個分支結構21〇b所構成，且 個分支結構21 Ob係位於資料配線2〇4之下方，並與資 9=〇4彼此交錯配置。而導電層212係配置於部分、：用配-己 之上方’ 1導電層212係對應於共用配線⑴之輕用人配部線 盥〇:配置。因此’此儲存電容器2〇8主要是利用導電層2。 人，、用配線210之耦合部21〇a以形成一儲存電容。曰 — 此外，在共用配線210與導電層212之間更配置 容介電層211，其係為形成薄膜電晶體2〇6 二電 同時W的-部份，電容介電層211之材質例\^層守所 矽、氧化矽、五氧化二鈕、二氧化钽或氧化鈦。 8177twf.ptd 591277 五、發明說明（7) 另外二在導電層2 1 2上則是覆蓋有一保護層2 1 4，其材’ 質例如為氮化矽。在保護層2丨4中更包括形成有一開口 2 1 6，暴露出導電層2 1 2，其中開口 2丨6主要係用來使配置 在保護層214上方之晝素電極218能與導電層212電性連 接。 當儲存電容器2〇8與資料配線2 〇4之間產生短路之情形 時，便可於儲存電容器2〇8中發生短路之分支結構以⑽處 ^雷射將其切除。在切除之後，儲存電容器2 〇 8中共用配 未發/短路之分支結構21㈣仍可使料電容器2〇8 t H 此在以雷射將發生短路處切除之後，不作可 因短路而產生的亮點缺陷，•可= 晝素結構之儲存電容之運作^曰〜…、用配線210上其他 厂=1上所述，本發明具有下列優點： “ 7C點缺陷 可改善習知 發生i务明之畫素儲存電容器結構之設計 之儲存雷交哭古包、+ 的方式切除，因此 存電合杰有無法修補之問題。 2.本發明之書素έ士 端之數個分支結構：二=儲存電容器之下電極兩 用雷射修補的方式切除:m党點缺陷時’可利 而提升面板之零亮點率。使旦素結構仍能正常運作，進 雖然本發明已以較佳麻 ，定本發明，任何熟習此c口上，然其並非用以 和範圍内，當可作些,:者，在不脫離本發明之精神 —干之更動與潤飾，因此本發明之保護 591277 五、發明說明（8) 範圍當視後附之申請專利範圍所界定者為準。 8177twf.ptd 第11頁 111· 591277 圖式簡單說明 第1圖為習知一畫素結構之上視圖； 第2圖為第1圖中之儲存電容器由I至Γ之剖面示意 圖； 第3圖為依照本發明一較佳實施例之一晝素結構之上 視圖；以及 第4圖為第3圖中之儲存電容器由II至ΙΓ之剖面示意 圖。Lit, the common wiring 210 is a part formed at the same time when the scanning wire 202 = the pole 203 is formed, and the material is the same as the lower electrode of the storage capacitor 208. The conductive two data wiring 204 and the source " and the electrodes 205, 2; and the-part, the material is, for example, the electrode on the gate: capacitor 208. The shared wiring 210 connected to the invention of the bamboo farm is connected by the coupling section 21a and the coupling σ.卩 210a is composed of several branch structures 21ob at both ends, and the branch structures 21 Ob are located below the data wiring 204, and are arranged alternately with the data 9 = 0. The conductive layer 212 is disposed on a part of the substrate: 配 is used above the substrate ′ 1 The conductive layer 212 is a portion of the light-duty personal distribution line corresponding to the common wiring: configuration. Therefore, the storage capacitor 208 mainly uses the conductive layer 2. The coupling portion 21a of the wiring 210 is used to form a storage capacitor. — In addition, a capacitive dielectric layer 211 is further arranged between the common wiring 210 and the conductive layer 212, which is a part of a thin film transistor 206 which is simultaneously and simultaneously W, and a material example of the capacitor dielectric layer 211 \ ^ Layer detention silicon, silicon oxide, pentoxide, tantalum dioxide or titanium oxide. 8177twf.ptd 591277 V. Description of the invention (7) The other two are covered with a protective layer 2 1 4 on the conductive layer 2 1 2. The material ’is, for example, silicon nitride. The protective layer 2 丨 4 further includes an opening 2 1 6 formed to expose the conductive layer 2 1 2. The opening 2 丨 6 is mainly used to enable the daylight electrode 218 disposed above the protective layer 214 to communicate with the conductive layer 212. Electrical connection. When a short circuit occurs between the storage capacitor 208 and the data wiring 2 04, the branch structure where the short circuit occurred in the storage capacitor 208 can be removed with a laser beam. After the removal, the storage capacitor 2 08 shared with the un-issued / short-circuited branch structure 21㈣ can still make the capacitor 2 0 8 t H. This is not a bright spot that can be caused by a short circuit after the short-circuit is removed by laser. Defects, • May = Operation of storage capacitors with day-to-day structure ^ ~ ~, using wiring 210 on other plants = 1 as described above, the present invention has the following advantages: "7C point defects can improve the pixels that are known to occur. The design of the storage capacitor structure is cut off in the way of storage thundercry gubao, +, so there is a problem that the storage power can not be repaired. 2. The book structure of the present invention has several branch structures: two = storage capacitor The lower electrode dual-purpose laser repair method is used to cut off: when the m-point defect is used, the panel's zero-brightness rate can be improved, so that the denier structure can still operate normally. Although the present invention has been better lined, the present invention, any Familiar with this c mouth, but it is not used in and within the scope, when you can do something, do not depart from the spirit of the present invention-change and retouch, so the protection of the present invention 591277 V. Description of the invention (8) Scope When attached Please refer to the definition of the patent scope. 8177twf.ptd Page 11 111 · 591277 Brief description of the diagram Figure 1 is a top view of a conventional pixel structure; Figure 2 is the storage capacitor in Figure 1 from I to A cross-sectional view of Γ; FIG. 3 is a top view of a daytime structure according to a preferred embodiment of the present invention; and FIG. 4 is a cross-sectional view of the storage capacitor from II to IΓ in FIG. 3.
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