588115 五、發明說明（I ) [發明的詳細說明] 本發明關於一種製造物理蒸氣析出的蒸鍍源的方法。 該蒸鍍源由本來的濺鍍靶(該濺銨靶具有一種鋁成份及一種 或數種其他成份）、及〜個背板(該背板由一種導熱性較該 耙的導熱性更好的材料製成)構成。其中該由粉末狀起始材 料構成的背板與該濺鍍靶的粉末狀成分共同以相疊成層的 粉末段加壓’然後滲透的情形下在該個別成份的熔點以下 的溫度作成形而製造，直到其密度達到理論密度的至少 98%爲止。 物理蒸氣析出用的噴灑耙(sputter Target)在今日廣泛用 於製造各種不同的層。其應用從製各種大不相同的基材料 用的耐磨損及耐腐蝕的覆層一直到層疊的複合材料，特別 是用在半導體-與電子工業者。由於其使用範圍廣泛，故須 析出各種大不相同的施覆材料。 如果不同的材料要同時噴霧上去，而這些材料在用傳 統的方式形成合金時，會形成脆的中間金屬相，因而這種 合金實際上不再能夠作冷成形或熱成形且也只能用高成本 作切屑方式加工時，就大有問題。因此要由這種合金製造 濺鍍靶，乃是極爲困難或者甚至不可能者。 舉例而言’由鋁與鈦構成的合金就屬於這種有問題的 材料，且只能用有利的方式用上述的方法加工成濺鍍靶。 這種方法見於奧地利專利案AT PS 338 752。 濺鍍靶一般在濺鍍設備中用機械方式固定在水冷式的 銅底座上，以將表面溫度降低。在此，在大多情形中，這 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公* ) (請先閱讀背面之注意事項再填寫本頁)588115 V. Description of the invention (I) [Detailed description of the invention] The present invention relates to a method for manufacturing an evaporation source for physical vapor deposition. The evaporation source consists of an original sputtering target (the ammonium sputtering target has an aluminum component and one or several other components), and ~ a backing plate (the backing plate is made of a material having better thermal conductivity than the rake) Made of materials). Wherein, the back plate composed of a powdery starting material and the powdery components of the sputtering target are jointly formed by pressing powder layers stacked on top of each other and then infiltrated at a temperature below the melting point of the individual component. Until its density reaches at least 98% of the theoretical density. Sputter targets for physical vapor deposition are widely used today to make a variety of different layers. Its applications range from abrasion and corrosion resistant coatings for a wide variety of base materials all the way to laminated composite materials, especially for the semiconductor and electronics industry. Due to its wide range of applications, it is necessary to precipitate a wide variety of coating materials. If different materials are sprayed up at the same time, and these materials form alloys in the traditional way, they will form a brittle intermediate metal phase. Therefore, this alloy can no longer be cold-formed or hot-formed and can only be used. There is a big problem when it comes to chip machining. It is therefore extremely difficult or even impossible to make a sputtering target from this alloy. For example, an alloy composed of aluminum and titanium belongs to this kind of problematic material, and can be processed into a sputtering target by the above-mentioned method in an advantageous manner. This method is found in the Austrian patent AT PS 338 752. Sputter targets are generally mechanically fixed to a water-cooled copper base in a sputtering equipment to reduce the surface temperature. Here, in most cases, these 3 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 * 297 public *) (Please read the precautions on the back before filling this page)
588115 B7 五、發明說明（^ ) (請先閱讀背面之注意事項再填寫本頁) 很嚴苛，且在鍍覆時會造成問題。對於電子業方面的應用 ，舉例而言，使用由鋁與組、銳、或釔成的材料組合，而 對於光學及磁性記憶媒，則多使用由鋁與鎳與鉻構成的材 料組合。 還有在作磨損防護方面的用途(其中有一種材料成分作 乾潤滑劑的作用），舉例而言，係用鋁與錫、鋅、銀、鎢、 鉬(往往還有配合附加的鈦成份)的材料組合。 爲了要在所有這些嚴格的材料組合在鍍覆時儘量避免 上述的問題，故目前被迫將蒸鍍速度限制，俾使表面溫度 不致升得太高。 要使這些嚴格的濺鍍靶的表面溫度即使在高鍍覆速度 時也能降低，而不必改變構造高度，其一種可能的方式， 係將該濺鍍靶在其與該水冷式的銅底座的接觸的區域的部 分設以一個由良導熱性材料製的背板，並將此背板與該銅 底座以機械方式連接。 製造這種蒸鍍源的方法(其中該背板藉軟銲或擴散結合 與該濺銨靶連接)的例子見於國際專利案W0 00/22185或在 美國專利案US 5,397,050。 在如此所製的蒸鍍源的場合，其缺點在爲：在靶與背 .板之間會產生一個熱傳導性不良的過渡區，該過渡區不能 確保熱最適當地從該濺鍍靶導離到該背板中再導離到該受 冷卻的銅底座中。 由於在該濺鍍靶的表面溫度高了幾度已會對噴霧性質 方面產生不良影響，故這種具不良導熱性的過渡區要設法 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 588115 A7 五、發明說明（+ ) 避免。 (請先閱讀背面之注意事項再填寫本頁) 因此本發明的目的在於提供一種製造物理蒸氣析出的 蒸鍍源的方法，其中該含有鋁成分的濺鍍靶可和背板連接 而不形成導熱性不良的過渡區。 這種目的依本發明達成之道，係將該同樣地由粉末狀 起始材料構成的背板與該濺鍍靶的粉末狀成分共同以相疊 成層的粉末段加壓，然後作成形。 用此方式與方法，在靶材料與背板之間造成一種出色 的結合，而不會形成導熱性不良的過渡區，因此，可使高 溫從該濺鍍靶的表面導離到該背板中再到達該水冷式的銅 底座中。由於該具水冷式的銅底座的濺鍍靶一般用螺合或 夾緊而固定，因此宜將該濺鍍靶的一些部段(這些部段本來 ^不再：能作濺鍍)做成背板形式，因此當構造高度相同時， 和I不具有背板的濺鍍靶相比來，有同樣多的有效地可蒸鍍 的材料可供使用。 爲了使靶材料與背板接合得特別牢，該靶要有L利地由 至少15%原子的鋁構成。可使本發明以特別有利的方式實 施的濺鍍靶係爲由15%原子的鋁及85%原子的鈦構成的靶 〇 適用於做蒸鍍源背板的特別有利的材料爲具有出色的 導熱性的純鋁。由於鋁較軟，因此與該水冷式銅底座作機 械方式連接可造成低熱阻的良好過渡區。此外，如果 在該祀材料的範圍中作濺鍍且因此使該背板某一部分也一 被濺鑛’則對於該噴霧的層的損壞並不會太大。但除了銘 6 用中國 iii?.(CNS)A4 規格 ϋϋ). ----- 588115 A7 _____B7_______ 五、發明說明（（） 外，其他具有良好導熱性的材料也適合。 (請先閱讀背面之注意事項再填寫本頁) 在壓坯(Pressling)成形時要達成材料的滲透(FlieJ3en)的 一種證實有效的方法，係在該鍛壓機(Schmiedepresse英z forging press)中使用锻壓法。 如果靶由鋁-鈦製造，例如15%原子的鋁與85%原子的 鈦，則事實顯示，該鍛壓方法宜在400°C〜450 °C之間 進行。 連續壓製(Strangpressen)係另一種在材料 之下儘重 有利地將壓坯成形的方法。 本發明的這種製造方法的變更方式在於：不同構造高 度濺鑛靶可從壓製的條帶(Strang)切出。 本發明在以下利用製造實施例詳細說明： [實例1] 一種盤狀的蒸鍍源，其直徑63mm，總高度33mm，由 一個高20mm的濺鍍靶(它由50%原子的鋁及50%原子的鈦 構成)及一個高12mm與此濺鍍靶牢接的背板(它由鋁製成) 構成，此蒸鍍源依本發明的方法如下製造。將平均顆粒尺 寸30//m的濺鍍靶用的鋁粉與鈦粉在一個搖晃攪拌機 .(Taumelmischer)中混合。 在一個油壓式壓機的一個分枝的壓機陰模 (Pressmatritze)中[此壓機陰模就該蒸鍍源的終尺寸而言，具 有足夠的多餘尺寸]，將該壓機陰模的下部首先用平均顆粒 尺寸30//m的純鋁粉充滿，並將充塡的粉堆刷平。然後把 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 588115 A7 ____B7_ ____ 五、發明說明（l) 該壓機陰模的上部放上去，並用該混合的鋁-鈦粉充塡’再 將充塡的粉堆刷平，並將充塡的粉堆刷平，並將該陰模的 充塡材料冷壓成一種具有其理論密度的94%的一種坯料 (Griinling) 0 將該壓坯在一個具有半開放的型鐵（Gesenk英； forming die)的鍛壓機中以約200°C的型鐵溫度在總共五道 通道中在將該個別成份作滲透或揉捏(Verkneten)的情形下 作後壓縮。 爲此，該壓坯在後壓縮之前以及在個別的壓縮步驟之 間在一個預熱爐中加熱到400°C〜450°C之間的溫度。由 於成形時間短且成形溫度低’故不需作防氧化的保護，故 後壓縮作業可在未知的狀態達成。 最後，利用機械方式加工將此蒸鍍源做成終尺寸。 在該濺鍍靶的材料與該背板的材料之間的過渡區前方 製造一種組織吸收部(Gefiigeaufnahme)。 第1圖顯示這種過渡區域的一百倍放大圖。 可明顯看出在該濺鍍靶的材料與背板的材料之間的絕 對均勻的過渡，而不會形成熱傳導性較低的妨礙性的間層 [實例2] 爲了作比較目的，製造一個盤形蒸鍍源，它具有與實 例1相同的尺寸。與實例1不同者，該蒸鍍源完全由一種 由50%原子的鋁及50%原子的鈦構成的濺鍍靶所構成，且 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁)588115 B7 V. Description of the Invention (^) (Please read the precautions on the back before filling this page) It is very strict and will cause problems during plating. For applications in the electronics industry, for example, a combination of materials consisting of aluminum and group, sharp, or yttrium is used, while for optical and magnetic memory media, a combination of materials consisting of aluminum and nickel and chromium is used. There are also uses for wear protection (one of which has a material component as a dry lubricant), for example, aluminum and tin, zinc, silver, tungsten, molybdenum (often with an additional titanium component) Material combination. In order to avoid the above-mentioned problems during plating in all these strict material combinations, it is currently forced to limit the evaporation rate so that the surface temperature does not rise too high. One possible way to reduce the surface temperature of these strict sputtering targets even at high plating speeds without changing the structural height is to place the sputtering target between the sputtering target and the water-cooled copper base. A part of the contact area is provided with a back plate made of a good thermally conductive material, and the back plate and the copper base are mechanically connected. Examples of methods for making such an evaporation source, in which the back plate is connected to the ammonium sputtering target by soldering or diffusion bonding, are found in international patent WO 00/22185 or in US patent US 5,397,050. In the case of the evaporation source prepared in this way, the disadvantage is that a transition region with poor thermal conductivity will be generated between the target and the back plate. This transition region cannot ensure that the heat is most appropriately conducted away from the sputtering target to The backplane is guided away into the cooled copper base. Because the surface temperature of the sputtering target is a few degrees higher, it will have an adverse effect on the spray properties. Therefore, this transition zone with poor thermal conductivity must be managed. 5 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 588 115 A7 V. Description of the invention (+) Avoid. (Please read the precautions on the back before filling this page) Therefore, the object of the present invention is to provide a method for manufacturing a vapor deposition source in which physical vapor is deposited, wherein the sputtering target containing an aluminum component can be connected to the back plate without forming heat conduction Sexual transition area. This object is achieved according to the present invention by pressing the back plate, which is also composed of a powdery starting material, together with the powdery component of the sputtering target in a layered powder section and then forming. With this method and method, an excellent combination is created between the target material and the back plate without forming a transition region with poor thermal conductivity, so that high temperature can be conducted from the surface of the sputtering target to the back plate. Reach into the water-cooled copper base. Since the sputtering target with a water-cooled copper base is generally fixed by screwing or clamping, it is appropriate to make some sections of the sputtering target (these sections are no longer ^ no longer able to be used for sputtering). Plate form, so when the construction height is the same, there are as many effectively vaporizable materials available as compared to a sputtering target without a backing plate. In order for the target material to be particularly securely bonded to the backing plate, the target should advantageously be composed of at least 15% atomic aluminum. The sputtering target that enables the present invention to be implemented in a particularly advantageous manner is a target composed of 15% atomic aluminum and 85% atomic titanium. A particularly advantageous material suitable for use as a vapor source backing plate has excellent thermal conductivity Sexual pure aluminum. Because aluminum is relatively soft, mechanical connection to this water-cooled copper base can result in a good transition zone with low thermal resistance. In addition, if sputtering is performed in the range of the target material and therefore a part of the back plate is also sputtered ', the damage to the sprayed layer will not be too great. But in addition to Ming 6 used in China iii ?. (CNS) A4 specifications ϋϋ). ----- 588115 A7 _____B7_______ 5. Description of the invention ((), other materials with good thermal conductivity are also suitable. (Please read the back of the first Note: Please fill in this page again.) A proven method to achieve material penetration (FlieJ3en) during press molding is to use the forging method in the forging press (Schmiedepresse). If the target Manufactured from aluminum-titanium, such as 15% atomic aluminum and 85% atomic titanium, the fact shows that the forging method should be carried out between 400 ° C ~ 450 ° C. Continuous pressing (Strangpressen) is another The following method is advantageous for forming the compacted compact. The method of changing the manufacturing method of the present invention lies in that the splatter targets with different structure heights can be cut out from the pressed strips. The present invention uses the following manufacturing examples Detailed description: [Example 1] A disc-shaped evaporation source with a diameter of 63mm and a total height of 33mm is composed of a 20mm high sputtering target (which is composed of 50% atomic aluminum and 50% atomic titanium) and a high 12mm back plate attached to this sputtering target ( It is made of aluminum), and the evaporation source is manufactured according to the method of the present invention. The aluminum powder and the titanium powder for a sputtering target having an average particle size of 30 // m are mixed in a shaking mixer (Taumelmischer). In a branched press mold of a hydraulic press (Pressmatritze [the negative mold of the press has enough extra dimensions in terms of the final size of the evaporation source]), The lower part is first filled with pure aluminum powder with an average particle size of 30 // m, and the filled powder pile is brushed flat. Then 7 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 588115 A7 ____B7_ ____ 5. Description of the invention (l) Put the upper part of the female mold of the press and fill it with the mixed aluminum-titanium powder, and then brush the filled powder pile, and flatten the filled powder pile. And the cold-filled material of the female mold is cold-pressed into a billet (Griinling) with a theoretical density of 94%. 0 The billet is placed in a forging press with a semi-opened iron (Gesenk; forming die). The individual components are infiltrated or formed at a temperature of about 200 ° C in a total of five channels. Post-compression in the case of kneading (Verkneten). For this purpose, the compact is heated to a temperature between 400 ° C and 450 ° C in a preheating furnace before and after the individual compression steps. Because the forming time is short and the forming temperature is low, no oxidation protection is required, so the post-compression operation can be achieved in an unknown state. Finally, this evaporation source is made to a final size by mechanical processing. A tissue absorption part (Gefiigeaufnahme) is made in front of the transition area between the material of the sputtering target and the material of the back plate. Figure 1 shows a hundred-fold magnification of this transition area. It can be clearly seen that an absolutely uniform transition between the material of the sputtering target and the material of the backing plate does not form an interfering layer with low thermal conductivity [Example 2] For comparison purposes, a disc was manufactured The shape of the evaporation source is the same as that of Example 1. Different from Example 1, the evaporation source is completely composed of a sputtering target composed of 50% atomic aluminum and 50% atomic titanium, and 8 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 public love) (Please read the notes on the back before filling this page)