584708 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明）584708 发明 Description of the invention (The description of the invention shall state: the technical field to which the invention belongs, the prior art, the content, the embodiments, and a brief description of the drawings)
【明所屬技領域]I 本發明係有關於一種利用光學顯微鏡及攝影裝置來測 定形成於透明玻璃上之圖樣之線寬的線寬測定裝置及方法 L· 1 習知技術 利用光學顯微鏡及CCD相機等二維影像感知器而測 定形成在半導體晶圓及玻璃基板上之配線圖樣等線寬之裝 10 置中’特別是用以測定並檢查形成在透明基板上之配線等 之成膜圖樣（如薄膜圖樣）之線寬及圖樣間隔的線寬測定裝 置已使用迄今。所謂透明基板，舉例言之，係指於測定檢 查時，可被照射在測定對象基板之光（如可見光、紅外線、 紫外線及X射線等）以可測定之穿透率以上進行穿透的玻璃 15 等基板（以下，稱為玻璃基板）。 最近’此種玻璃基板被作為電漿顯示器及LCD之顯 示基板而加以使用，而該玻璃基板之大小舉例言之如 lmxlm ’且有更大型化之傾向。舉例言之，形成在玻璃基 板上之薄膜圖樣係呈第2圖所示般之截面結構。玻璃基板[Technical field of Ming] I The present invention relates to a line width measuring device and method for measuring the line width of a pattern formed on a transparent glass using an optical microscope and a photographing device. L. 1 Conventional technology uses an optical microscope and a CCD camera The device for measuring line widths such as wiring patterns formed on semiconductor wafers and glass substrates, such as a two-dimensional image sensor, is especially used to measure and inspect film-forming patterns such as wirings formed on transparent substrates (such as Film pattern) Line width and line width measuring device of pattern interval have been used so far. The so-called transparent substrate refers, for example, to glass that can be penetrated by a light (such as visible light, infrared rays, ultraviolet rays, and X-rays) that is irradiated onto the substrate of the measurement target during measurement and inspection with a measurable transmittance of 15 or more. And other substrates (hereinafter referred to as glass substrates). Recently, such a glass substrate has been used as a display substrate for a plasma display and an LCD. The size of the glass substrate is, for example, lmxlm, and it tends to be larger. For example, a thin film pattern formed on a glass substrate has a cross-sectional structure as shown in FIG. 2. Glass base board
20 200之厚度約為〇 3mm〜0.7mm程度，而薄膜圖樣a、B 之厚度e ’舉例言之為1μηι程度，薄膜圖樣B之Tnab為 8μηι、BNab為ιομηχ，如前所述，形成有極為精細之圖樣 〇 以第3圖說明習知之線寬測定裝置。第3圖係一塊狀 6 584708 玖、發明說明 圖’用以顯示基本之線寬測定裝置之結構。1為待測試料 、2為基板抑制導引器、3為吸附板、4為Z軸方向機構部 (Z台）、5為X軸方向機構部（X台）、6為γ軸方向機構部 (Y台）、7為光學顯微鏡、8為攝影部、9為光源、為測 5定控制部、11係用以驅動X台5與Y台6而將控制信號 賦予X台5及γ台6之χγ台控制部、15為用以驅動z 台4並調整焦點位置而將控制信號賦予z台4之z台控制 部、12為監視器、71為物鏡、72為中間透鏡、73為聚光 透鏡、74為分光鏡。 10 待測試料1係以形成在玻璃基板及其表面之金屬薄膜 等配線（或薄膜）圖樣而構成者。且，攝影部8為CCD相機 荨ITV相機，而監視器^ 2係一由CRT、TFT及LCD等所 構成之顯示裳置。 如第3圖所示，自光源9輸出之光通過集光透鏡73、 15分光鏡74、物鏡71❿照射於搭載在吸附板3之待測試料i 之所欲部分上。光學顯微鏡7係使藉該已被照射之光而反 射之待測試料1所欲部分的反射光透過物鏡71與中間透鏡 Μ而在攝影部8上成像。攝影部8取得該像並轉換為電性 仏號，猎此攝得測定物試料i上之所欲部分（如薄膜圖樣） 20，再作為影像信號輸出至測定控制部10。測定控制部1〇 可將收取之影像信號加以演算處理，並以電性測定所欲部 分之線寬尺寸’再輸出至監視器12。監視器12係用以顯 不測定物試料1之影像及線寬之測定值。測定控制部10則 可控制χγ台控制部Π與Z台控制部15。 、 7 玖、發明說明 X軸方向機構部5與γ軸方向機構部6為便於攝影吸 附板3上以基板抑制導引器2固定之待測試料！的所欲部 分，而依XY台控制部11之控制被驅動。舉例言之，吸附 板3係結合至真空裝置上，使玻璃基板吸附於吸附板3並 固定。另，Z軸方向機構部4係設置成相對測定物試料ι 呈垂直，並依Z台控制部15之控制來調整同樣地設置成 垂直之光學顯微鏡7的焦點位置。 如前述，一般而言，第3圖之線寬測定裝置被利用於 測定形成在玻璃基板上之成顧樣（如使蒸鍍祕刻為預定 形狀之薄膜圖樣）之線寬及圖樣間隔，並檢查形成在玻璃基 板上之成膜圖樣之良否。 絲以弟4圖簡單地說明基本尺寸測定處理之原理。 第4(a)圖係顯示-監視器u之攝影部8所攝得之待測 試料ι的影像例示。第4(b)圖則係針對第4⑷圖之影像而 顯不亮度-像素特性（亮度波形）之一例。 第4(a)圖中，掃描線Li橫跨形成在待測試料丨上之 樣 500 〇 如第4⑷、⑻圖所示，攝影部8所攝得之待測試料i 之所欲部分’如水平掃财Li上之亮度分布可作為對應掃 4田線L]之景彡像信號N分解之各像素位置及對各個亮度之 觉度-像素雜_得。於此，N為轉抑線方向 數。 ' 基本之尺寸測定之處理方法係藉亮 ^ 精儿度-像素特性（亮度 波开d求出尺寸。於第4圖之例示中 7冗度分布中最大亮 584708 玖、發明說明 度位准51為100%，最小亮度位准52為〇%，並令相當於 中間亮度位准5〇%之亮度位准53之第a個像素與第b個像 素間之位置差為獅。此外，若令係由用於攝影之顯微鏡 7的―及攝影部8至測定試料2間之待攝體距離所 5決定之係數為k’則圖樣500之線寬X可藉式（1)求出。 X-kxNab ...... (1) 於此，帛4⑷圖之圖樣500以外之部分則為玻璃基板 本身’其反射率甚低，約為4%程度。 習知之線寬測定裝置中，來自照明器等光源9之光係 10透過集光透鏡73至分光鏡74，再透過物鏡71而被照射至 待攝體之待測試料1。 待測試料1之反射光係於物鏡71被擴大，再透過中間 透鏡。72而入射至攝影部8。攝影部8將入射之光轉換為: 1像U虎後輸出至測定控制部1()。測定控制部⑺係將輸入 15之影像信號加以影像處理，並算出待測試料ι所欲部分之 〜像、測疋條件、χγζ位置資訊及線寬測定結果等，再轉 換為監視器12可顯示之袼式而輸出至監視器12。 監視器12係用以顯示待測試料】之測定對象所欲部分 2之影像、測定條件、ΧΥΖ位置情報及線寬測定結果等：刀 ^待測"式料1係搭載於由X軸方向機構部5、γ軸方向 機構部6及吸附板3所構成之χγ台，以基板抑制導弓ι : 2 &位’並以吸附板3吸附之，再進而固定基板。 ΧΥ台係藉Χ軸方向機構部5朝水平X方向移動，並 藉Υ軸方向機構部6而朝γ方向移動，使待測試料玉之所 9 584708 玖、發明說明 欲部分配合於光學顯微鏡7之光軸線上而定位。z軸方向 機構部4可朝垂直z(光軸）方向移動，進而將測定對象 測定對象處定位在光學顯微鏡7之焦點位置上。 測定控制部10具有CPU(圖中未示），以進行線寬測定 5裝置之控制。舉例言之，測定控制部10係將控制信號送至 XY台控制部11並移動吸附板3，使待測試料丨之所欲部 分與光學顯微鏡7之光軸一致。藉此，χγ台控制部u可 控制吸附板3之位置。另，舉例言之，測定控制部1〇係將 控制信號送至Z台控制部15，而控制z軸方向機構部4之 10 位置。 依待測試料1圖樣之截面形狀，攝影部8所攝影像之 亮度波形將如第2圖所示。第2圖之亮度波形2〇1係用以 顯示反射光之亮度波形者，而該反射光係：來自玻璃基板 200令形成有薄膜圖樣側（上側）之光L1照射於該玻璃基版 15 200及形成於該玻璃基板200上之2種圖樣（圖樣A、圖樣 B)時之反射光。 測定線寬時有必要測量形成在玻璃基板2〇〇之圖樣a 及B的截面（特別係玻璃基板200與圖樣A及B之玻璃基 板200之接觸部分）之寬度、長度等尺寸或面積。 -0 圖樣B可藉照射光，而以式（1)測定出上邊之長度 尺寸TNab之亮度波形2〇1的凸部ab間之長度。但，下 邊（與玻璃基板200接觸之底部位置）部分之長度BNab則因 亮度波形201之亮度差微小而檢測困難。 同樣地，圖樣A中，上邊之長度TNab雖可藉檢測亮 10 584708 玖、發明說明 度波形201之凹部a、b而以式（1)測出’但相當於下邊之 部分（底部位置）之長度BNab則無法自亮度波形2〇1取得， 故而無法測定。 且’即使於圖樣A與B中之任一者，其上部具有其他 5 圖樣及構造物時均無法正確測定。 如前述，測定薄膜圖樣之尺寸及面積之理由，亦如已 於第2圖說明者，因薄膜圖樣之尺寸大約僅有5μιη〜ΐ5μιη 程度，厚度則約Ιμιη〜5μιη程度，極為精細，故考慮與玻 璃基板間之接著強度之問題及具電極般之配線時其電阻將 10被尺寸及面積左右，因此乃需盡可能正確地測出正確之尺 寸及面積。 【發明内容3 為達成前述目的，本發明之線寬測定裝置係把即將 形成於透明玻璃基板上之成膜圖樣搭載於χγ台上，再由形 15 成有成膜圖樣之玻璃基板側之裏面進行圖樣之測定。 即，本發明之線寬測定方法係利用線寬測定裝置進 行者，該線寬測定裝置係由以下部分所構成，即：固定台 ’係用以支持已形成有被測定物之測定基板者；照明機構 ’係用以照明該被測定物者；攝影裝置，係透過光學顯微 20 鏡攝影該測定基板者；及信號處理部，係用以處理來自該 攝影裝置之影像信號，並測量該被測定物之尺寸者；其中 ’該攝影裝置係配置於該測定基板中形成有該被測定物之 側的相反側，且藉該照明機構而由該測定基板側照明該被 11 584708 玖、發明說明 測定物’使其反射光經由該測定基板以藉該攝影裝置進行 攝影。 且本發明之線寬測定方法中，形成有該被測定物之 測定基板為形成有濾色器之液晶基板或TFT基板。 5 此外’本發明之線寬測定裝置其係由以下部分所構 成’即：固定台，係用以支持已形成有被測定物之測定基 板；照明機構，係用以照明該被測定物者；攝影裝置，係 透過光學顯微鏡攝影該測定基板者；及信號處理部，係用 以處理來自該攝影裝置之影像信號，並測量該被測定物之 10尺寸者；其中，前述攝影裝置及照明機構係設置於該測定 基板中形成有該被測定物之侧的相反側，且藉該照明機構 而由該測定基板侧照明該被測定物，使其反射光經由該測 定基板以藉該攝影裝置進行攝影。 此外’本發明之線寬測定裝置更具有用以驅動支持該 15 測定基板之固定台或該攝影裝置之機構部。 此外’本發明之線寬測定裝置係將支持該測定基板之 固定台構成為可使該測定基板大致呈縱方向者。 另’本發明之線寬測定裝置中，該形成有被測定物之 測定基板為形成有濾色器之液晶基板或TFT基板。 20 即’本發明之線寬測定方法係藉一以光學顯微鏡及攝 影裝置測定透明玻璃基板上之被測定物之微小寸法的線寬 測定裝置，以由該玻璃基板裏侧測定該被測定物者。 另’本發明之線寬測定方法係將該透明之玻璃基板設 12 584708 玖、發明說明 置成、力略縱向，以由4破蹲基板裏側測定該被測定物者。 /此外，本發明之線寬測定裝置係以一線寬測定襄置進 订測疋者’而該線寬測定I置具有用以投影透明基板上之 被測定物的光學顯微鏡，及用以攝影該被投影之被剛定物 並轉換為影像信號之攝影部，再將該影像信號演算處理以 測定該被測定物之線寬者；其更具有用以將該透明基板保 持成約略垂直之台，且該光學顯微鏡係由該透明基板之 側投影被測定物。 圖式簡單說明 第1圖係一塊狀圖，用以顯示本發明一實施例之線寬 之基本結構。 裝置 第2圖係用以說明習知之測定方法者。 第3圖係-塊狀圖，用以顯示基本之線寬測定裝置結構。 第4圖_以簡單說明尺寸測定處理之原理者。 15 第5圖係用以說明本發明之啦方法者。 ^ 6 ^_以習知方法所攝影像之-例者。 第7圖係用以顯示以本發明之方法所攝影像之一例者。 第8圖顯示以f知方法所攝影像之一例者。 20 第圖係用以顯示以本發明之方法所攝影像之一例者。 第10圖係〜& a 裝置之A本奸構狀圖，用以顯示本發明其他實施例之線寬測定 式】 【實施冷 發明之實施形態 本發明之^ + 貫苑例係將形成有薄膜圖樣之破璃基板搭 13 坎、發明說明 載於XY纟，再由基板表侧形成有薄膜圖樣之基板的未形 成薄膜基板之基板側（基板晨側）照射照明光以進行測定者 。士使用第3圖所示之習知農置並由基板之裏面側進行測定 時，基板表側（形成有薄膜圖樣之側）若與吸㈣3接觸， 則積體電路之所緣圖樣將損壞，因而必須使基板表側與吸 附板3保持不接觸。 因此，本發明之一實施例中，係將待測試料1設置呈 大致縱方向，再將待測試料！之基板裏側（未形成有薄膜圖 樣之側）的周邊吸附固定住，並將光學顯微鏡配置於待測試 10料1之裏側，再由基板裏側進行測定。藉此，如第5圖所 示，可測定台形下邊（底部位置）之寬度。 雖亦可考慮如第3圖之習知裝置般地將基板番河面來進 行測量，但將周邊部吸附固定而將玻璃基板2〇〇平面配置 時，因玻璃基板200之大小為lmxlm且厚度為〇3m〜 I5 〇.7m程度，故玻璃基板2〇〇之中央部分將響曲（變形）數十 〜數百μηι程度。而該變形之比例⑽曲之大小）若與欲測定 之薄膜圖樣的尺寸程度相同或更大，或比光學顯微鏡7之 焦點深度為大，則將難以正確測量。因此，本發明之一實 施例中，係將固定基板之ΧΥ台設置成縱向。 1〇 第1圖係一塊狀圖’用以顯示本發明之-實施例之線 寬測定裝置的基本結構。 將待測試料1搭載於由吸附板3,及基板抑制導引器2， 所構成之ΧΥ台上。待測試料！係以基板抑制導引器2，定 位，以吸附板3,吸附待測試料！之周邊部後，再固定於 14 584708 玖、發明說明 XY台。XY台係安裝於固定台13上，並設置成使待測試 料1大致呈垂直。The thickness of 20 200 is about 0.3 mm to 0.7 mm, and the thickness e of the thin film pattern a, B is about 1 μηι, for example, the Tnab of the thin film pattern B is 8 μηι, and the BNab is ιο μηχ. Fine pattern 〇 The conventional line width measuring device will be described with reference to FIG. 3. Figure 3 is a block 6 584708 玖, description of the invention Figure ′ is used to show the structure of a basic line width measuring device. 1 is the material to be tested, 2 is the substrate suppression guide, 3 is the suction plate, 4 is the Z-axis direction mechanism portion (Z stage), 5 is the X-axis direction mechanism portion (X stage), and 6 is the γ-axis direction mechanism portion. (Y stage), 7 is an optical microscope, 8 is a photographing unit, 9 is a light source, 5 is a measurement control unit, 11 is used to drive X stage 5 and Y stage 6, and control signals are given to X stage 5 and γ stage 6 The χγ stage control unit, 15 is the z stage control unit that drives the z stage 4 and adjusts the focus position to give a control signal to the z stage 4, 12 is the monitor, 71 is the objective lens, 72 is the intermediate lens, and 73 is the condenser The lens, 74 is a beam splitter. 10 The material to be tested 1 is formed by wiring (or thin film) patterns such as metal thin films formed on the glass substrate and its surface. Moreover, the photographing section 8 is a CCD camera or an ITV camera, and the monitor ^ 2 is a display device composed of a CRT, a TFT, and an LCD. As shown in FIG. 3, the light output from the light source 9 is irradiated on a desired portion of the material to be tested i mounted on the adsorption plate 3 through a collecting lens 73, a 15 beam splitter 74, and an objective lens 71 ′. The optical microscope 7 allows the reflected light of a desired portion of the test specimen 1 reflected by the irradiated light to pass through the objective lens 71 and the intermediate lens M to form an image on the photographing section 8. The photographing unit 8 obtains the image and converts it to an electric 仏, hunts it to capture a desired portion (such as a thin film pattern) 20 on the measurement sample i, and outputs the image to the measurement control unit 10 as an image signal. The measurement control unit 10 may perform calculation processing on the received video signal, and electrically measure the line width dimension of a desired portion 'and output it to the monitor 12. The monitor 12 is used to display the measured values of the image and line width of the sample 1. The measurement control section 10 can control the χγ stage control section Π and the Z stage control section 15. , 7 玖, description of the invention The X-axis direction mechanism portion 5 and the γ-axis direction mechanism portion 6 are for testing the material to be tested fixed on the suction plate 3 with the substrate suppression guide 2! The desired portion is driven by the control of the XY stage control portion 11. For example, the adsorption plate 3 is coupled to a vacuum device so that the glass substrate is adsorbed on the adsorption plate 3 and fixed. In addition, the Z-axis direction mechanism section 4 is provided perpendicular to the sample to be measured, and the focal position of the optical microscope 7 which is also vertically set is controlled by the control of the Z stage control section 15. As described above, in general, the line width measuring device of FIG. 3 is used to measure the line width and pattern interval of a finished pattern (such as a thin film pattern that is engraved into a predetermined shape) formed on a glass substrate, and The quality of the film-forming pattern formed on the glass substrate was checked. The figure below briefly explains the principle of the basic sizing process. Figure 4 (a) shows an example of the image of the sample under test taken by the camera 8 of the monitor u. Figure 4 (b) is an example of the brightness-pixel characteristics (luminance waveform) displayed on the image in Figure 4 (b). In FIG. 4 (a), the scanning line Li is formed across the sample to be tested 500. As shown in Figures 4 and 4, the desired portion of the material to be tested i taken by the photographing unit 8 is as shown in FIG. The brightness distribution on the horizontal scanning property Li can be obtained as each pixel position of the scene image signal N corresponding to the scanning field line L] and the perception of each brightness-pixel noise. Here, N is the number of turning lines. '' The basic processing method for size measurement is to use the brightness ^ precision-pixel characteristics (brightness wave opening d to obtain the size. In the example shown in Figure 4, the maximum brightness in the 7 redundancy distribution is 584708. It is 100%, the minimum brightness level 52 is 0%, and the position difference between the a-th pixel and the b-th pixel of the brightness level 53 equivalent to 50% of the intermediate brightness level is lion. In addition, if The coefficient of the line width X of the pattern 500 is determined by the coefficient k determined by the microscope distance 7 for the photography 7 and the distance between the photographic part 8 and the measurement sample 2 to obtain the formula 500. X- kxNab ...... (1) Here, the part other than the pattern 500 in the 帛 4⑷ drawing is the glass substrate itself. Its reflectance is very low, about 4%. In the conventional line width measuring device, it comes from lighting. The light system 10 of the light source 9 such as an instrument passes through the collecting lens 73 to the beam splitter 74, and then passes through the objective lens 71 and is irradiated to the object 1 to be tested. The reflected light of the object 1 to be tested is enlarged by the objective lens 71, and then It passes through the intermediate lens. 72 and enters the imaging unit 8. The imaging unit 8 converts the incident light into: 1 image U tiger and outputs it to the measurement control unit 1 (). The measurement control unit is to process the image signal of the input 15 and calculate the image, measurement conditions, χγζ position information, and line width measurement results of the desired part of the material to be tested, and then convert it to the monitor 12 for display. This method is output to the monitor 12. The monitor 12 is used to display the image 2 of the desired part 2 of the measurement object], the measurement conditions, the position information of the XYZ, and the measurement result of the line width, etc .: knife ^ to be measured " The formula 1 is mounted on a χγ stage composed of the X-axis direction mechanism portion 5, the γ-axis direction mechanism portion 6, and the adsorption plate 3, and the substrate is guided by the substrate to suppress the guide bow: 2 & The substrate is further fixed. The XY stage is moved in the horizontal X direction by the X-axis direction mechanism portion 5, and is moved in the γ direction by the y-axis direction mechanism portion 6, so that the material to be tested is Jade House 9 584708. Positioned on the optical axis of the optical microscope 7. The z-axis direction mechanism section 4 can be moved in the vertical z (optical axis) direction, thereby positioning the measurement object at the focal position of the optical microscope 7. The measurement control section 10 With CPU (in the figure (Shown) to control the line width measurement device 5. For example, the measurement control section 10 sends a control signal to the XY stage control section 11 and moves the adsorption plate 3 so that the desired portion of the material to be tested and the optical microscope The optical axis of 7 is the same. With this, the χγ stage control unit u can control the position of the adsorption plate 3. In addition, for example, the measurement control unit 10 sends a control signal to the Z stage control unit 15 to control the z-axis direction Position 10 of the mechanical part 4. Depending on the cross-sectional shape of the pattern of the test material 1, the luminance waveform of the image taken by the photographing part 8 will be as shown in Fig. 2. The luminance waveform 2 of Fig. 2 is used to display the reflected light. Brightness waveform, and the reflected light is: the light from the glass substrate 200 with the thin film pattern side (upper side) formed on the glass base plate 15 200 and the two patterns formed on the glass substrate 200 (pattern A, Pattern B). When measuring the line width, it is necessary to measure the width, length, and other dimensions or areas of the cross sections of the patterns a and B formed on the glass substrate 2000 (particularly the contact portions between the glass substrate 200 and the glass substrate 200 of the patterns A and B). -0 Pattern B can measure the length of the upper side by the formula (1) by irradiating light, and the length between the convex portions ab of the luminance waveform 201 of the size TNab. However, the length BNab of the lower portion (the bottom position in contact with the glass substrate 200) is difficult to detect because the brightness difference of the brightness waveform 201 is small. Similarly, in the pattern A, although the length TNab on the upper side can be measured by the formula (1) by detecting the recesses a and b of the bright 10 584708 玖, the invention description waveform 201, but it is equivalent to the lower part (bottom position). Since the length BNab cannot be obtained from the luminance waveform 201, it cannot be measured. In addition, even if any of the patterns A and B has other patterns and structures on the upper portion, it cannot be accurately measured. As mentioned above, the reason for measuring the size and area of the film pattern is also as explained in Figure 2. Because the size of the film pattern is only about 5 μm to ΐ 5 μm, and the thickness is about 1 μm to 5 μm, which is very fine, so The problem of the bonding strength between the glass substrates and the resistance of the electrode-like wiring will be about 10 size and area, so it is necessary to measure the correct size and area as accurately as possible. [Summary 3] In order to achieve the aforementioned object, the line width measuring device of the present invention mounts a film-forming pattern to be formed on a transparent glass substrate on a χγ stage, and then forms the inside of the glass substrate side with the film-forming pattern from 15 The pattern is measured. That is, the line width measurement method of the present invention is performed by using a line width measurement device. The line width measurement device is composed of the following parts, that is, a "fixed table" is used to support a measurement substrate on which a measurement object has been formed; The 'illuminating mechanism' is used to illuminate the person to be measured; a photographing device is used to photograph the measurement substrate through an optical microscope 20 lens; and a signal processing unit is used to process the image signal from the photographic device and measure the subject Those who measure the size of the object; 'The photographing device is arranged on the side opposite to the side where the object to be measured is formed in the measuring substrate, and the measuring device is illuminated by the side of the measuring substrate by the lighting mechanism. The measurement object 'passes reflected light through the measurement substrate to be imaged by the imaging device. In the line width measurement method of the present invention, the measurement substrate on which the object to be measured is formed is a liquid crystal substrate or a TFT substrate on which a color filter is formed. 5 In addition, the "line width measuring device of the present invention is composed of the following parts", that is: a fixed table for supporting the measurement substrate on which the object to be measured has been formed; an illumination mechanism for illuminating the object to be measured; The photographing device is for photographing the measurement substrate through an optical microscope; and the signal processing section is for processing an image signal from the photographing device and measuring the size of the object to be measured; wherein the aforementioned photographing device and lighting mechanism are It is arranged on the measurement substrate opposite to the side on which the object to be measured is formed, and the object to be measured is illuminated from the measurement substrate side by the illumination mechanism, and the reflected light passes through the measurement substrate to be photographed by the imaging device. . In addition, the line width measuring device of the present invention further has a mechanism section for driving a fixed table supporting the 15 measuring substrate or the photographing device. In addition, the line width measuring device of the present invention is a structure in which a fixed base supporting the measuring substrate is configured so that the measuring substrate can be oriented substantially in the vertical direction. In the line width measuring device of the present invention, the measurement substrate on which the object to be measured is formed is a liquid crystal substrate or a TFT substrate on which a color filter is formed. 20 That is, the "line width measuring method of the present invention is a line width measuring device for measuring the micrometer of an object to be measured on a transparent glass substrate with an optical microscope and a photographing device, and the person measuring the object from the back side of the glass substrate . In addition, the method of measuring the line width of the present invention is to set the transparent glass substrate 12 584708 玖, the description of the invention, the force is slightly vertical, and the object to be measured is measured from the inside of the 4 broken substrate. / In addition, the line width measuring device of the present invention is based on a line width measurement, and the line width measurement device is provided with an optical microscope for projecting an object to be measured on a transparent substrate, and for photographing the line width measurement device. The projected part that has just been fixed and converted into an image signal, and then the image signal is calculated and processed to determine the line width of the object to be measured; it also has a stage for maintaining the transparent substrate to be approximately vertical, And the optical microscope projects the object to be measured from the side of the transparent substrate. Brief Description of Drawings Figure 1 is a block diagram showing the basic structure of the line width according to an embodiment of the present invention. Device Fig. 2 is a diagram for explaining a conventional measurement method. Fig. 3 is a block diagram showing the structure of a basic line width measuring device. Fig. 4_ A person who briefly explains the principle of the sizing process. 15 Figure 5 is used to illustrate the method of the present invention. ^ 6 ^ _ Examples of images taken by conventional methods. FIG. 7 is a view showing an example of an image taken by the method of the present invention. FIG. 8 shows an example of an image taken by the f-known method. 20 The diagram is an example of an image taken by the method of the present invention. Fig. 10 is an A configuration diagram of a device of & a, which is used to display the line width measurement formula of other embodiments of the present invention. The glass substrate of the thin film pattern is placed on 13 ohms, and the description of the invention is carried in XY 纟, and then the illumination side is irradiated with illumination light from the substrate side (substrate morning side) of the non-thin film substrate on which the thin film pattern is formed on the substrate side. When a person uses the conventional farming equipment shown in Figure 3 to measure from the back side of the substrate, if the front side of the substrate (the side where the thin film pattern is formed) contacts the suction 3, the physical pattern of the integrated circuit will be damaged, so It is necessary to keep the front side of the substrate and the suction plate 3 out of contact. Therefore, in one embodiment of the present invention, the material to be tested 1 is set in a generally longitudinal direction, and then the material to be tested is set! The periphery of the back side of the substrate (the side where the thin film pattern is not formed) is adsorbed and fixed, and the optical microscope is arranged on the back side of the material to be tested 1, and then measured from the back side of the substrate. Thereby, as shown in Fig. 5, the width of the lower side (bottom position) of the table can be measured. Although it is also possible to measure the substrate Panhe surface like the conventional device shown in FIG. 3, when the glass substrate 200 is arranged in a planar manner by fixing and fixing the peripheral portion, the size of the glass substrate 200 is lmxlm and the thickness is 〇3m ~ I5 〇.7m, so the central part of the glass substrate 2000 will tune (deform) tens to hundreds of μm. If the proportion of the distortion is the same as or larger than the size of the film pattern to be measured, or larger than the focal depth of the optical microscope 7, it will be difficult to measure correctly. Therefore, in one embodiment of the present invention, the X-axis stage of the fixed substrate is arranged in the vertical direction. 10 Figure 1 is a block diagram 'for showing the basic structure of a line width measuring device according to an embodiment of the present invention. The material to be tested 1 is mounted on an X-axis table composed of an adsorption plate 3 and a substrate suppression guide 2. Materials to be tested! It is based on the substrate suppression guide 2 and positioned to attract the plate 3 and the material to be tested! After the peripheral part, it is then fixed at 14 584708 玖, description of invention XY stage. The XY stage is mounted on the fixed stage 13 and is arranged so that the material 1 to be tested is substantially vertical.
待測試料1之基板中，第1圖之左側係形成有用以測 定之薄膜圖樣之面（表側），而右側則為未形成有用來測量 5之薄膜圖樣之面（裏側）。其他之結構、測定、演算處理、 及顯示4均與第3圖所示之習知裝置相同而省略其說明。In the substrate of Test Material 1, the left side of Fig. 1 forms the surface (front side) for measuring the thin film pattern, while the right side is the side (inside) where the film pattern for measuring 5 is not formed. The other structure, measurement, calculation processing, and display 4 are the same as those of the conventional device shown in FIG. 3, and descriptions thereof are omitted.
自光源9輸出之光係透過集光透鏡73、分光鏡74及 物鏡71，而照射在已搭載於吸附板3,之待測試料（玻璃基 板）1之未开> 成有薄膜圖樣之面的所欲部分。所照射之光將 10於玻璃基板1與薄膜圖樣a，b反射，進而透過光學顯微 鏡7而被攝影部8攝影。 依待測試料1之薄膜圖樣之欲測定部分（測定圖樣）之 截面形狀’攝影部8所攝之測定圖樣之影像的亮度波形 5〇1將如第5圖所示。 15 ’収圖案之線寬測定必須測量待測試料1之圖樣a及The light output from the light source 9 is transmitted through the collecting lens 73, the beam splitter 74, and the objective lens 71, and irradiates the unopened material (glass substrate) 1 of the material to be tested (glass substrate) 1 already mounted on the adsorption plate 3 > The desired part. The irradiated light is reflected on the glass substrate 1 and the thin film pattern a, b, and then transmitted through the optical microscope 7 to be photographed by the photographing section 8. The luminance waveform 501 of the image of the measurement pattern taken by the photographing section 8 according to the cross-sectional shape of the portion to be measured (measurement pattern) of the film pattern of the test material 1 will be shown in FIG. 5. 15 ’Measurement of the line width of the received pattern must measure the pattern a and
B的截面，即，台形形狀之下邊（底部）。 測定圖樣B時’可與習知技術相同，使下邊長度 BNab如第4圖般地進行亮度波形處理，並依式⑴而測得 " 亦可同樣地使下邊長度BNab如第4 般地進行亮度波形處理再依式（1)而測得。 第6〜9圖係由表側及裏側攝影待測試料時之影像之 ’可顯示習知技術與本發明間之差異。第6〜9圖之影像 措日立電子國際公司製之ITV相機㈤,，ccd相機购 15 584708 玖、發明說明 像素數768(H)x492(V))、畫面速度30Hz(2 : 1間隔 (interlace))}所構成之攝影部8取得。第6圖係以Μχ5〇顯 微鏡（物鏡10倍）由表側（上側）攝影TFT基板之一部份所得 影像者，第7圖係用以顯示由裏側（下）攝得之影像者。另 5 ，第8圖係以MX50顯微鏡（物鏡20倍）由表側攝影TFT基 板之一部份所得影像，第9圖則係顯示由裏側攝得之影像 者。 第6圖所示圖樣由該相片之影像就可明瞭，圖樣6〇1 中，圖樣601上更被其他圖樣膜遮蓋而無法明確讀取圖樣 10之寬度，故難以測定圖樣寬度。 相對於此，本實施例所得之第7圖之照片中，同樣之 圖樣602則可明確地被讀取，故可計測出圖樣6〇2之尺寸 〇 第8及9圖係用以比較使用習知技術及本發明之技術 15對同一玻璃基板之同一圖樣進行多數次測定時之測定不均 者。以習知技術所得之第8圖中，若以標準偏差之3倍表 示再現性則為〇·〇3μπι，以本發明之技術所得之第9圖中， 若以標準偏差之3倍表示再現性則為〇〇15μηι。即，再現 性亦有大幅改善，由此可知藉實施本發明，可再現性良好 20地且較習知測定方法更正確地計測出微細尺寸。 本發明之其他實施例更可如第1〇圖所示，呈由基板抑 制導引器、2,與吸附板3,所構成之卡g結構，可由固定台 13裝卸，藉此可與由裝著有其他待賴料！之基板抑制^ 引器2,與吸附板3,所構成之卡g 14交換，而可容易地進 16 584708 玖、發明說明 行待測試料之交換。 此外，前述實施例中，雖構成使待測試料丨位置於大 致縱向上，但即使&置於垂直；，當㈣可於焦點距離 範圍内保持某種程度之角度來設置。 5 #，帛10 ®係一塊狀圖，顯示有本發明另-實施例之 線寬測定裝置之結構。第1〇之實施例中，依XYS控制部 11之控制而驅動之X軸方向機構部5及γ軸方向機構部 6係使搭載有光學顯微鏡7之ζ軸方向機構部4作動，再 攝影待測試料1之所欲部分。此時，與第丨圖之例示者相 10同，將依χΥ台控制部u之控制，X軸方向機構部^及γ 軸方向機構部6被驅動。此時，有效於在待測試料1與其 他試料交換時使待測試料側作動。 如刖所述’為測置待測試料之所欲部分，可明瞭無論 係使待測試料側及攝影部側中任一者或二者作動均可。 15【發明之效果】 如前所述，若依本發明則可： (1)因可由基板裏側進行顯微鏡觀察，故可測定微細 之薄膜圖樣4與基板之接觸部分之線寬，而可針對液晶芙 板與渡色器基板上之線圖樣等之形成在透明基板上之成膜 20圖樣來正確地進行所需之線寬測定檢查，進而提高製造後 程序之成品率。 (2)藉將0.3〜0.7mm厚度之透明基板配置成垂直，可 使其與光學顯微鏡之焦點距離經常保持一定，即使自由作 動XY台，光學顯微鏡亦不致於與透明基板接觸而損及圖 17 584708 玖、發明說明 樣，進而可提高成品率。 (3)作為形成在lmxlm之大型化液晶基板、遽色器基 板、TFT基板等透明基板上之之成膜圖樣的檢查裝置，藉 採用使基板垂直站立而進行測定之方式，可實現裝置之小 5 型化。 【圖式簡單說明】 第1圖係一塊狀圖，用以顯示本發明一實施例之線寬測定裝置 之基本結構。 第2圖係用以說明習知之測定方法者。 10 第3圖係一塊狀圖，用以顯示基本之線寬測定裝置結構。 第4圖係用以簡單說明尺寸測定處理之原理者。 第5圖係用以說明本發明之測定方法者。 第6圖係用以顯示以習知方法所攝影像之一例者。 第7圖係用以顯示以本發明之方法所攝影像之一例者。 15 第8圖係用以顯示以習知方法所攝影像之一例者。 第9圖係用以顯示以本發明之方法所攝影像之一例者。 第10圖係一塊狀圖，用以顯示本發明其他實施例之線寬測定 裝置之基本結構。 18 584708 玖、發明說明 【圖式之主要元件代表符號表】 1...待測試料 12···監視器 2、2’…基板抑制導引器 13...固定台 3、3’...吸附板 14…卡匣 4...Z軸方向機構部 15...Z軸控制部 5...X軸方向機構部 71…物鏡 6... Y軸方向機構部 72…中間透鏡 7...光學顯微鏡 73···集光透鏡 8...攝影部 74.··分光鏡 9...光源 200…玻璃基板 10...測定控制部 201…亮度波形。 11...XY台控制部 19The cross section of B, that is, the lower side (bottom) of the mesa shape. When measuring pattern B, it can be the same as the conventional technique, so that the bottom length BNab is processed as shown in Figure 4 and the luminance waveform is measured according to the formula &. The bottom length BNab can also be performed in the same manner as in Figure 4. The brightness waveform processing is then measured according to formula (1). Figures 6 to 9 show the differences between the conventional technology and the present invention when images of the test material are taken from the front and back. The images in Figures 6 to 9 are ITV cameras made by Hitachi Electronics International, ccd cameras purchased 15 584708, invention description pixels 768 (H) x 492 (V)), screen speed 30Hz (2: 1 interval (interlace ))}. Figure 6 shows an image obtained from a part of the TFT substrate on the front side (upper side) using a MX50 microscope (10x objective lens), and Figure 7 shows the image taken from the back side (bottom). In addition, Fig. 8 is an image obtained from a part of the front-side photographing TFT substrate with an MX50 microscope (20 times the objective lens), and Fig. 9 is an image taken from the inner side. The pattern shown in Figure 6 is clear from the image of the photo. In the pattern 601, the pattern 601 is covered by other pattern films and the width of the pattern 10 cannot be read clearly, so it is difficult to determine the width of the pattern. In contrast, in the photo of the seventh image obtained in this example, the same pattern 602 can be clearly read, so the size of the pattern 60 can be measured. The eighth and nineth images are used to compare usage habits. The known technique and the technique 15 of the present invention are those whose measurement is uneven when the same pattern of the same glass substrate is measured a plurality of times. In the eighth figure obtained by the conventional technique, if the reproducibility is represented by three times the standard deviation, then 0.03 μm, and in the ninth figure obtained by the technique of the present invention, the reproducibility is represented by three times the standard deviation. It is 015 μm. In other words, the reproducibility has also been greatly improved, and it can be seen that the implementation of the present invention has good reproducibility, and more accurately measures the fine size than conventional measurement methods. As shown in FIG. 10, the other embodiment of the present invention can be a card g structure composed of a substrate restraining guide 2, and a suction plate 3, which can be attached and detached by the fixing table 13, thereby allowing the There are other things to be expected! The substrate suppressor 2 is exchanged with the card g 14 formed by the adsorption plate 3, and it can easily enter 16 584708. Description of the invention The exchange of the material to be tested. In addition, in the foregoing embodiment, although the position of the material to be tested is positioned in a substantially vertical direction, even if & is placed vertically, it can be set at an angle within a range of the focal distance. 5 #, 帛 10 ® is a block diagram showing the structure of a line width measuring device according to another embodiment of the present invention. In the tenth embodiment, the X-axis direction mechanism section 5 and the γ-axis direction mechanism section 6 driven under the control of the XYS control section 11 actuate the ζ-axis direction mechanism section 4 on which the optical microscope 7 is mounted, and then photographing is performed. Test the desired part of material 1. At this time, as in the example shown in FIG. 丨, the X-axis direction mechanism section ^ and the γ-axis direction mechanism section 6 are driven under the control of the x-axis stage control section u. At this time, it is effective to actuate the material to be tested when the material to be tested 1 is exchanged with another sample. As described in the above, it is clear that the desired portion of the material to be tested is set, and it can be understood that either or both of the material side to be tested and the photographing unit side can be operated. 15 [Effects of the invention] As described above, according to the present invention: (1) Since the microscope can be observed from the inside of the substrate, the line width of the thin film pattern 4 and the contact portion of the substrate can be measured, which can be used for liquid crystals. The film pattern 20 formed on the transparent substrate, such as the line pattern on the substrate and the color ferrule substrate, is used to correctly perform the required line width measurement and inspection, thereby improving the yield of the post-manufacturing process. (2) By arranging a transparent substrate with a thickness of 0.3 to 0.7 mm perpendicularly, the focal distance between the transparent substrate and the optical microscope can be kept constant. Even if the XY stage is freely operated, the optical microscope will not be in contact with the transparent substrate and damage Fig. 17 584708 玖, invention sample, which can improve the yield. (3) As an inspection device for a film-forming pattern formed on a transparent substrate such as a large-sized liquid crystal substrate, a chroma substrate, and a TFT substrate, by measuring the substrate vertically, the device can be small. 5 types. [Brief description of the drawings] Fig. 1 is a block diagram showing the basic structure of a line width measuring device according to an embodiment of the present invention. Fig. 2 is a diagram for explaining a conventional measurement method. 10 Figure 3 is a block diagram showing the structure of a basic line width measuring device. FIG. 4 is a diagram for briefly explaining the principle of the dimensional measurement process. Fig. 5 is a diagram for explaining the measuring method of the present invention. FIG. 6 is a diagram showing an example of an image taken by a conventional method. FIG. 7 is a view showing an example of an image taken by the method of the present invention. 15 Figure 8 shows an example of images taken by conventional methods. FIG. 9 is a diagram showing an example of an image taken by the method of the present invention. Fig. 10 is a block diagram showing the basic structure of a line width measuring device according to another embodiment of the present invention. 18 584708 发明, description of the invention [drawing table of the main components of the drawings] 1 ... to be tested 12 ... monitor 2, 2 '... substrate suppression guide 13 ... fixed stage 3, 3'. .. Suction plate 14 ... Cassette 4 ... Z-axis direction mechanism portion 15 ... Z-axis direction mechanism portion 5 ... X-axis direction mechanism portion 71 ... Objective lens 6 ... Y-axis direction mechanism portion 72 ... Intermediate lens 7 ... Optical microscope 73 ... Collecting lens 8 ... Photographing section 74 ... Beamsplitter 9 ... Light source 200 ... Glass substrate 10 ... Measurement control section 201 ... Brightness waveform. 11 ... XY stage control unit 19