TW578365B - A multi-band electronic circuit - Google Patents

Abstract

This invention is related to a multi-band electronic circuit and its design methodology. The application frequency band is switched from one band to another by changing the bias current or bias voltage of a transistor. Compared with the prior art, our invention does not need off-chip inductor/capacitor and additional wire bonding, which is helpful to the enhancement of the yield and throughput and the reduction of cost.

Description

578365 V. Description of the invention (i) [Technical field to which the invention belongs] The present invention relates to a new type of multi-band amplifier (Multi_band Low Noise Amplifier) electronic circuit and a design method thereof, especially a $ 1 bias current or Amplified state electronic circuits and design methods for achieving frequency band switching by changes in bias voltages are used to effectively simplify the complexity of low noise amplifier electronic circuit design. [Previous Technology] The wireless communication industry has evolved to a variety of standards / multiple services, such as Wireless Local Area Network (9 W / AN) using 2.4 GHz, 5. 2 GHz, 5. 7 GHz Frequency bands, GSM mobile phones use 0.9 GHz, 1.8 GHz, and 1.9 GHz frequency bands, while Global Position System (GPS) uses 1.5 GHz frequency bands. Therefore, it is better to integrate multiple standards in the same transceiver chip, that is, to be able to design and make multi-band transceivers. The main challenge in designing a multi-band transceiver is to improve the capabilities of the communicator while using a minimum of extra circuitry, such as a low-noise amplifier. The strategy for designing multi-band transceivers is to design a low-noise amplifier for a certain frequency band. In other words, to design a tri-band transceiver that can use 0.9 GHz '1.8 GHz' 1. 9 GHz band, three low-noise amplifiers must be designed to respond to three different frequencies. Therefore, the amplifier ’s associated gain, noise index (NolteFi =), input impedance, and output impedance are all designed for a specific frequency band. In this way, the area and power consumption of the entire circuit of the multi-band transceiver 578365 Invention Description (2) is much larger than the single-band transceiver. Take the traditional integrated multi-band receiver as shown in the first figure as an example: from antenna 〇〇〇, band selection filter 丨 〇J three low noise amplifier 1 0 3, image removal filter 丨 〇4 to channel selection filter Device 1 07 is an independent receiving path of the application frequency band 1. From the antenna 丨 〇9, the band selection filter 110, the low noise amplifier 丨 2, and the image cancellation filter 丨 j 3 to the channel selection filter 116, it is an independent receiving path for the application frequency band 2. From the antenna 11 8, the band selection filter 丨 9, the low-noise amplifier 丨 2 丨, the image cancellation filter 1 2 2 to the channel selection filter 丨 2 5 are independent receiving paths for the application frequency band 3. '' Take the independent receiving path of the application frequency band one for illustration. After the signal is received by the antenna 100, it first passes the frequency band selection filter 1101 to filter out the frequency band other than the application frequency band 1, and then passes through the low-noise amplifier of the next stage. To amplify the signal and reduce the increase in noise. Next, the image cancellation filter 104 removes noise at the image frequency. After the frequency is reduced, the channel filter 107 selects a channel in the application frequency band 1. The next part is the circuit common to frequency band 1, application frequency band 2, and application frequency band 3. After confirming that it is a certain application frequency band, the frequency is down-converted and the analog-digital ~ converter 128 is used to digitize the signal. Digital Signal Processing 129 Digitized signals. ♦ ~ Reason It can be seen from the description of ^ ^ that the integration of reception in multi-band applications The traditional approach is to design the application circuits of each frequency band separately, and then search for it all. The low-noise amplifier for the key circuit in the receiver must also be designed in the same frequency band. In this way, the area and power of the entire circuit will not increase significantly. In previously published papers, only the application

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The circuits are all used in this way (that is, different low-noise amplifiers are used to handle different frequency bands), you can refer to: 1. Γ Antes and C. Conkling in Microwave RF in December 1996 Papers published on the "..." rf chip set fits, multimode cel lular / PCS handsets, n. 2. Papers published on 8.111 and 8823 ¥ 1 in December 1998 on 1 £££ jssc: "A 900—ΜΗζ / 1 · 8—GHz CM0S receiver for dual-band applications, ". 3. R. Magoon, I. Koullias, L.

Papers by Steigerwald, W. Domino, N. Vakillian, E. Ngompe, M. Damgaard, K. Lewis, and A. Molna, February 2001, ISSCC Digest of Technical papers: nA triple -band 90 0/1 80 0/1 900 MHz low-power image-reject front-end for GSM, M 04. K. L. Fong's paper published in ISSCC Digest of Technical papers in February 1999 : NDual-band high-linearity variable-gain low-noise amplifiers for wireless applications, ". Recently H. Hashemi and A. Hajimiri published a paper on IEEE Transactions on Microwave Theory and Techniques in January 2002: '' ConcurrentMulti band Low-Noise Amplifiers-Theory, Design, and App 1 i ca ti ons, n use the same low-noise amplifier to process multi-band signals. This multi-band low-noise amplifier can use the same low-noise amplifier

Page 9 578365 V. Description of the invention (4) The communication amplifier meets the requirements of different frequency bands, so the integration in multi-band applications can simplify the design of the transceiver (there is no need to design multiple different low-noise Λ amplifiers). In this way, the area of the entire system circuit can be reduced and the power consumption is reduced. The reduction in area and power consumption is very advantageous for the commercialization of Dilu.

The design method of low noise amplifier proposed by H. Hashemi and a, Hajimiri is different from that of traditional low noise amplifier. Please refer to the second figure. The design method of the traditional low-noise amplifier is to use the source inductor 20 7 to generate the required resistance for input impedance matching (usually 50?), And then use the inductor 2 0 1 'to make it and the gate into the gate. The extreme total input capacitance is resonant at the desired frequency band. At the output end, a common cavity formed by an inductor 204 and a capacitor 208 is used to select a desired frequency band.

For the design method of the multi-band low noise amplifier proposed by H. Hashemi and A. Ha Jimir, please refer to the third figure. At the input terminal 'in addition to the conventional inductor 31 which can generate the resistance (usually 50W) required for input impedance matching and the inductor 30 which can achieve resonance in the desired frequency band', it also adds a parallel combination of inductors 〇1 and capacitor 302. The purpose is to add another resonance frequency to achieve the function of multi-band input matching. At the wheel output, in addition to the conventional two-cavity cavity consisting of an inductor 3 1 2 and a capacitor 3 1 3, a series combined inductor 3 07 and a capacitor 3 06 are also added. The purpose is also to add another resonance frequency to achieve the function of selecting the desired multiple frequency bands. In short, H. Hashemi and A. Hajimiri achieved the function of multi-band applications by increasing the number of inductors and capacitors. There are many disadvantages to this design approach.

578365 V. Description of the invention (5), ----- First of all, this design shares five inductors f, 30, inductor 307, inductor 310, and inductor 312, and the second imperial inductor 30: t. 3 0 4 is the inductance outside the chip) and three capacitors (package, inductor 3 0 1 and inductor 306 and capacitor 313, where capacitor 302 is the design of the capacitor 302 outside the chip and the capacitor low noise amplifier (please refer to The second s' is compared to the inductance: 201, 204, 20 7 and the capacitance of a person on a chip: 208, the customer has two inductors and two capacitors. Because of the inductance, a & 'The power of the number of Puxi bud valleys is σ, and it uses inductors and capacitors outside the chip (much larger than the area of the electric salt and thunder on the chip). The area of the entire circuit becomes larger. γ / ~ is very large, and the %% right stroke method integrates the entire design on the same chip. Crystal M / You'll say that the extra wiring and wiring of the inductor outside the moon increases the cost and reduces the audible sound * " 乂, The degree of crime, which is very detrimental to the mass production and commercialization of integrated circuits. When noise amplifiers are used, the use of inductors is usually minimized. This is because the inductance occupies a large area, and the second reason is that the quality factor of the inductor on the chip is not high, which will cause the noise index. In the case of a and δ ten low noise amplifiers, it is generally necessary to avoid the use of inductors as much as possible. However, the methods proposed by emi · Hashemi's and A · Hajimiri's increase the use of inductors. Therefore, there is a great need for Increase the area and the number of components without additional wiring and wiring, but can still handle multi-band amplifiers. [Abstract] The object of the present invention is to provide a multi-band amplifier electronic circuit and its design method, which can be achieved by using only a single amplifier. Input resistance of multiple frequency bands

Page 11 578365 V. Description of the invention (6) Anti-matching, and does not increase the area, the number of components, or additional wiring or wiring. In order not to increase the area, the number of components, or to make additional wiring or wiring, the present invention proposes to change the bias operating conditions (operating voltage or operating current) of the transistor in the amplifier to change the base-emitter or base of the transistor in the amplifier. Capacitance between collector and collector (if the transistor used is bipolar transistor, bipolar junction transistors or heterojunction

bipolar transistors); or the gate of the transistor in the amplifier; the capacitance between the electrode or the gate and the drain (if the transistor used is a field effect transistor). Take the bipolar transistor as an example to see the total input capacitance of the base, including base-emitter capacitance and Miller capacitance (which is caused by the base-collector capacitance), both of which will be biased. As a function of the voltage operating current (or bias operating voltage) changes the base operating voltage (or base operating current) of this bipolar transistor, it will change the collector current, or directly change the collector of the bipolar transistor. Change the total input capacitance seen into the base terminal. In this way, the 2/2 resonant frequency composed of the total input capacitance of the base terminal and the inductor connected to the base terminal will vary with the operating conditions of the amplifier transistor (i.e., I # voltage or bias operating current). change.

The input end can match the input impedance to different gain, miscellaneous, and different frequency bands, and the impedance can be matched in 4 pairs. Because of this issue: Month X uses the signal index and the output impedance of 0. There must be a bias operation on the circuit.

On the output side, the circuit structure 1 vibrating cavity can be used to reach the temple generated by J 捃 捃 3 ~ ^ Valley, inductance. Page 12, V. Description of the invention (7) Voltage or bias operation Thunder & For Xi The know-how can achieve the multi-band impedance matching function, so the phase wire and wiring Γ do not need to increase the area and the number of components, nor do they need to make the present invention μ μ easy to understand. The following description and other purposes, features And the advantages can be more clearly as follows: [4] The preferred embodiment, and in conjunction with the attached drawings, will be described in detail [Embodiment] The physical function t creation tool 2 · 4/5 · 2/5 · 7 GHZ multi-band office & Example ^ i circuit diagram. In this multi-band low-noise amplifier, as mine, two: change the switch to change the base operation of the first transistor 408 of the amplifier + L = the collector operation current of the first transistor 408 of the amplifier is also Two: Let's change the total input voltage of the base of the first-stage transistor ^ IN / CIN and the inductor 404 connected to the base, forming a resonance cavity to achieve gain, noise index, and input impedance. . #Under the operating current condition, that is, the switch is connected to the current source 403. At this time, the collector current 405 of the second-stage transistor in this embodiment will be 3.8 mA, and the inductance connected to the base 4 0 4 The resonant cavity composed of the total input capacitance c I n seen at the base of the first-level transistor can achieve input impedance matching at 2.4 GHz (WLAN wireless area network IEEE 802 · 1 lb). Under operating condition two, that is, the switch is connected to the current source 401. At this time, in this embodiment, the collector current 405 of the first-stage transistor will be 3 mA, and the inductor 40 connected to the base and the The resonant cavity composed of the total input capacitance c 丨 N at the base of the first-stage transistor can achieve input impedance matching at 5.2 / 5.7 GHz (WLAN wireless local area network IEEE ^ 211a). In the output part 4 1 4 we used the feedback resistor 578365 V. Description of the invention (8) = 0 to achieve output impedance matching. When no output impedance matching is required, the output impedance matching is achieved without using the feedback resistor 410. The resistors 407 and 2 are loads for the first-stage transistor and the second-stage transistor, respectively. Reality :: Although the electricity T is negative, it is also possible to use an inductive or capacitive load if necessary. 1i 1 The main point is that the input can achieve multi-band impedance matching. The fifth picture shows the photo of the wafer from the beginning. Since we only use one inductor (404) 丄, ^ is the inductor made on the chip, so not only the entire circuit can be completely implemented on the earlier chip, but the circuit area is very small, only 355 _ X 1 55 nun. This is very beneficial for commercialization. ^ For the performance of this multi-band low noise amplifier in gain, please refer to Figures 6A and 6B. Under the operating conditions (the collector of the first-stage transistor is 3.8 mA at 405), the gain of this multi-band low-noise amplifier at 2 · 4 GHz (S21) has reached 14 ″ dB (the higher the better ), And under operating condition two (collector current 405 of the first-stage transistor is 3.0 mA), the gain (S21) of this multi-band low-noise amplifier at 5 · 2/5 · 7 GHz has reached respectively 1 4 · 3 dB and 1 3 · 5 dB (the higher the better). For the performance of this multi-band low noise amplifier in terms of input and output impedance matching, please refer to Figures 7A and 7B. Under operating conditions (collector current 405 of the first-stage transistor is 3 · 8 mA), the matching privacy of this multi-band low-noise amplifier for input impedance (usually expressed as input return loss 丨 叩 return loss S11 No) 'from 1.5 GHz to 3 GHz are all below -15 dB (the lower the better) ° The degree of matching to the output impedance (usually expressed as output ire turn l0ss S22) is also quite equivalent Not bad (about 10 dB). Super-heterodyne receiver

Page 14 578365 V. Description of the invention (9) The matching degree of the output impedance (S22) is important. If it is used in direct frequency reduction (direct conversio 〇r zer〇—IF) or low intermediate frequency receiver (Low IF), it is not important whether the output impedance is matched or not. Under operating condition two (the collector current of the first-stage transistor is 4 〇5 is 3 · 〇 ^ A,), the degree of matching (S11) of this multi-band low-noise amplifier to the input impedance is between 5.15 GHz and Below 5 · 3 5 GHz are below -22 dB (lower is better), between 5 · 725 GHz and 5. 8 25 GHz are lower than -π · 5 d B (lower is better) . The matching degree of the output impedance is also quite good. field

For the performance of this multi-band low noise amplifier on the noise index, please refer to Figure 8. Under operating conditions (collector current 405 of the first-stage transistor is 3.8 111 eight), the noise index at 2.4 0112 is 3.18 (16 (lower is better), and under operating condition two (first-stage transistor) The collector current of the crystal is 3.0 mA (3.0 mA). The noise index of this multi-band low-noise amplifier at the 5 · 2 GHz and 5 · 7 GHz is 3 · 4 2 d B and 3 · 2 1 d B (the lower the The better). Generally for 802.11 · and 802.11 · 1 lb wireless local area network (WLAN) applications, the noise index of the low-noise amplifier is only less than 5 dB, and the input (output) foldback loss is less than -1 0 dB is enough. So we can say that according to the embodiment of this creation: 2 · 4/5 · 2/5 · 7 GHz multi-band low noise amplifier, which has about gain, noise index, input impedance and The performance of the output impedance matching degree has quite good results in three frequency bands of 2.4 GHz, 5. 2 GHz, and 5. 7 GHz. In fact, the main technical content of the present invention will be Presented at the International Solid State Circuit Conference in May. This conference is the highest level of circuit conferences.

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V. Description of the invention (10) Compared with the conventional multi-band low-noise amplifier, this creation uses only a single amplifier to achieve input impedance matching in multiple frequency bands, without increasing the area, the number of components, or the need for additional wiring, Wiring. Although the present invention has been defined in terms of the preferred embodiments. Anyone who is familiar with this technique and scope can make a variety of more scopes as the attached patent application examples are disclosed above, but it is not intended for artists' to move and retouch without departing from the spirit of the present invention, so the present invention The protection scope shall prevail.

Page 16 578365 Brief description of the diagram. Figure-Figure: Known multi-band chip integration method for multi-band applications. The second figure is the circuit diagram of the conventional low-noise amplifier. Third figure = Hash-A and HajimiriA's low-noise amplifier circuit. * * 7 GHz multi-band low-noise GHz multi-band GHz multi-band The fourth figure is the circuit diagram of the creative embodiment (2.4 / 5.2 / 5 signal amplifier). The fifth figure is a photo of the chip of the creative example (2.4 / 5.2 / 5: ^ low noise amplifier). The sixth figure A is the performance of the creative embodiment (2 · 4 / 5. 2/5 segment low noise amplifier) under the operating conditions. The sixth figure B is the gain performance of the creative embodiment (2.4 / 5.2 / 57 Zhongda H) under operating conditions ^. Zhenchang low first A: put the cost: = ΓΚ2 · 4 / 5.2 / 5 · 7 GHz multi-band low noise characteristics ii table ^ conditions, the seventh figure of the input return fold loss vs. frequency Example (2.4 / 5.2 / 5.7 GHz multi-band low-noise characteristics. The eighth plot of output foldback loss vs. frequency under known operating conditions is implemented in 2.4 / 5.2 / 5.7 GHz multi-band low-noise. Noise index frequency 578365 under the second and second conditions. Reference part number> Wave filter filter filter signal filter filter amplifier filter filter filter filter filter signal diagram simple explanation < Figure 1 0 0 Antenna 1 0 2 Bandpass filter 1 0 4 Mirror cancellation I 0 6 Local vibration 108 Bandpass filter II 0 Band selection 11 2 Low noise 11 4 Bandpass filter 11 6 Channel selection 1 1 8 Antenna 1 2 0 Bandpass filter 1 2 2 Mirror cancellation 1 2 4 Local oscillator 1 2 6 Bandpass filter 1 2 8 Analog-to-digital converter 2 0 0 Input 2 0 2 Bias 204 Inductor 206 Transistor 208 Capacitor 3 0 0 Input Terminal 302 capacitor 3 0 4 wire inductance 1 0 1 band selection filter 1 0 3 low noise amplifier 1 0 5 band pass filter 1 0 7 channel selection filter I 0 9 Antenna 111 Bandpass filter II 3 Image cancellation filter 11 5 Local oscillation signal 11 7 Bandpass filter 11 9 Band selection filter 1 2 1 Low noise amplifier 123 Bandpass filter 125 Channel selection filter 1 2 7 Frequency signal 1 2 9 Digital signal processing 2 0 1 Inductor 2 0 3 Voltage source 2 0 5 Transistor 20 7 Inductor 2 0 9 Output 3 0 1 Inductor 3 0 3 Bias 3 0 5 Pad «

Page 18 578365 Brief description of the diagram 306 capacitor 307 inductor 308 field effect transistor 309 field effect transistor-310 inductor 312 inductor 1 313 capacitor 314 output 400 input 401 current source 402 capacitor 403 current source 404 inductor 405 collector current 406 Voltage source 407 Resistor 408 Transistor 409 Capacitor 410 Resistor 411 Power supply i 412 Resistor (R2) 413 Transistor 414 Output

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Claims (1)

578365 Patent application range 2345678 10 11 Circuit impedance change. If the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the designee, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant, the claimant. Method, please special method, please special method, please special method, please special method, please special method, please specifically connect to the electrical frequency band to switch to another circuit design method, the pressure changes, so that the transistor input at least ~ The frequency range is reached through the inductor of the crystal. The range of interest is the range of the range of interest, the range of interest, the range of electricity, the range of electricity, the range of profit, and the range of profit. Among them, the electric power range includes the electric power range of the first term, the first term, the second term, the second term, the second term, the fourth term, the sixth term, the sixth term, the sixth term, the seventh term, and the fifth term. The multi-band discharge of the tenth item of the transistor is a multi-band discharge of a bipolar transistor and the multi-band discharge of a field effect transistor is a current. Many frequency bands are depressurized to voltage. The multi-band amplifier's wheel-in end is the multi-band amplifier bias. The base is the multi-band amplifier. The multi-band amplifier is the collector. The multi-band amplifier is the multi-band amplifier. The multi-band amplifier is the multi-band amplifier. The body of the circuit. Large electrical body. Large-scale electric current Large-scale electric current base. Amplifier current. Amplifier current. Large-scale electrical base, large-scale electrical circuit design, sub-circuit design, sub-circuit design, sub-circuit design, sub-circuit design, sub-circuit design, sub-circuit design, sub-circuit design, etc. Page 20 578365 6. Method of patent application calculation, in which the transistor bias is the base voltage. 1 2. The design method of the electronic circuit of the multi-band amplifier according to item 3 of the patent application, wherein the transistor bias is a current. 1 3. The design method of the electronic circuit of the multi-band amplifier according to item 3 of the patent application, in which the transistor bias is a voltage. 14. The design method of the electronic circuit of the multi-band amplifier according to item 12 of the patent application scope, wherein the input terminal of the transistor is a gate terminal. 15. The design method of the electronic circuit of the multi-band amplifier as described in item 14 of the patent application scope, wherein the transistor bias is a sink-source current. 16. The design method of the electronic circuit of the multi-band amplifier according to item 13 of the patent application, wherein the transistor bias is the gate voltage. 17. A multi-band amplifier electronic circuit composed of a first bipolar transistor, a second bipolar transistor, a first resistor, a second resistor, a third resistor, an inductor and a capacitor; a first bipolar transistor The emitter of the crystal and the second bipolar transistor are grounded; the inductor is connected to the base terminal of the first bipolar transistor; one end of the first resistor is connected to the collector terminal of the first bipolar transistor; The other end of the first resistor is connected to a power source; the collector terminal of the first bipolar transistor is also connected to one end of the capacitor; the other end of the capacitor is connected to the base of the second bipolar transistor; One end of the second resistor is connected to the collector terminal of the second bipolar transistor; the other end of the second resistor is connected to the power source; one end of the third resistor is the base phase of the second bipolar transistor Connected; the other end of the third resistor is connected to the collector of the second bipolar transistor; and the first bipolar transistor is changed by the bias of the first bipolar transistor Page 21 578365 6. The drain terminal of the scope of the patent application is connected; the other end of the first resistor is connected to the power source; the drain terminal of the first field effect transistor is also connected to one end of the capacitor; One end is connected to the base of the second field effect transistor; one end of the second resistor is connected to the drain terminal of the second field effect transistor; the other end of the second resistor is connected to a power source; the first One end of the three resistors is connected to the gate of the second field effect transistor; the other end of the third resistor is connected to the collector of the second field effect transistor; by the bias of the first field effect transistor, The input impedance of the first field effect transistor and the inductance are switched from a certain resonance frequency band to another resonance frequency band, so as to achieve switching of multiple frequency bands. > 2 6. The electronic circuit of the multi-band amplifier according to item 25 of the patent application range, wherein the change of the first field effect transistor bias is the change of the current bias. 27. The electronic circuit of the multi-band amplifier according to item 25 of the patent application range, wherein the change of the first field transistor bias is a change of the voltage bias. 28. The electronic circuit of the multi-band amplifier according to item 26 of the patent application, wherein the change of the current bias is the change of the drain-source current bias. 29. The electronic circuit of the multi-band amplifier according to item 27 of the patent application, wherein the change of the voltage bias is the change of the gate voltage bias. Page 23