CN111416586A - Load structure and radio frequency amplifier formed by same - Google Patents
Load structure and radio frequency amplifier formed by same Download PDFInfo
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- CN111416586A CN111416586A CN202010258430.9A CN202010258430A CN111416586A CN 111416586 A CN111416586 A CN 111416586A CN 202010258430 A CN202010258430 A CN 202010258430A CN 111416586 A CN111416586 A CN 111416586A
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Abstract
The invention discloses a load structure for a radio frequency amplifier, which comprises N parallel R L C circuits which are sequentially connected in series, wherein a first connecting end of a first parallel R L C circuit is used as a first connecting end of the load structure, a second connecting end of an Nth parallel R L C circuit is used as a second connecting end of the load structure, and a third connecting end of the load structure is connected with a first connecting end of a second parallel R3526C circuit
The second connection end of each parallel R L C circuit is connected with a power supply voltage, the parameter of the Mth parallel R L C circuit device and the (N-M +1) th parallel R L C circuit device form a first-stage R L C parallel resonance network, the parameters of the same-type devices in the same-stage R L C parallel resonance network are the same, and the load structure has the advantages that the power supply voltage is reduced, the load structure is stable, the load
Compared with the prior art, the load structure and the radio frequency amplifier formed by the load structure can bring about at least 4.4 dB-6.3 dB to the voltage gainThe invention can at least bring 2.5 times of improvement to the bandwidth and at least bring 2.6 times of improvement to the gain flatness under the same gain.
Description
Technical Field
The present invention relates to the field of communications, and in particular, to a load structure for a radio frequency amplifier. The invention also relates to a radio frequency amplifier formed by the load structure.
Background
The radio frequency amplifier can be divided into two parts, namely an active amplifying tube and a load, wherein the active amplifying tube can be a MOSFET or a BJT and the like according to different processes, the load part is responsible for providing certain impedance, and the prior art mostly adopts a single-stage R L C parallel resonant network as shown in figure 1.
In the design of the radio frequency amplifier in the prior art, a single-stage R L C parallel resonant network is mostly adopted as a load, but the single-stage R L C parallel resonant network is a narrow-band system and is difficult to meet the system with higher requirements on gain, bandwidth and gain flatness, such as an ultra-wideband communication system.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention aims to provide a load structure for a radio frequency amplifier, which can improve the bandwidth and gain flatness.
Another technical problem to be solved by the present invention is to provide a radio frequency amplifier having the load structure.
The gain, bandwidth and gain flatness of the rf amplifier are mainly determined by the gain and load impedance of the active amplifier tube. The gain of the active amplifier tube is determined by the type of device, size and bias point selected for the design. The main design idea of the invention is to optimize the load impedance part of the radio frequency amplifier.
To solve the above technical problem, the present invention provides a load structure for a radio frequency amplifier, comprising:
n parallel R L C circuits connected in series in sequence, the first connection end of the first parallel R L C circuit is used as the first connection end of the load structure, and the Nth parallel R L C circuitAs a second connection of the load structure, a
The second connection end of each parallel R L C circuit is connected with a power supply voltage;
wherein, the Mth parallel R L C circuit device parameter and the (N-M +1) th parallel R L C circuit device form a first-stage R L C parallel resonance network, the same device parameter in the same-stage R L C parallel resonance network is the same, the load structure has
Stage R L C is connected in parallel with the resonant network, N is a multiple of 2, and N is more than M.
Optionally, the load structure is further improved, and the same device parameters of different levels of R L C parallel resonant networks are different.
Optionally, the load structure is further improved, and N is 4 or 6.
Optionally, the load structure is further improved, and the parallel R L C circuit is composed of an inductor, a resistor and a capacitor connected in parallel.
The invention provides a radio frequency amplifier having a load structure as defined in any one of the preceding claims, comprising:
the first connection end of the load structure is connected with the first output end (OUTN) of the radio frequency amplifier, and the second connection end of the load structure is connected with the second output end (OUTP) of the radio frequency amplifier;
the first connection end of the active amplification structure is connected with the first input end (INN) of the radio frequency amplifier, the second connection end of the active amplification structure is connected with the second input end (INP) of the radio frequency amplifier, the third connection end of the active amplification structure is connected with the first output end (OUTN) of the radio frequency amplifier, and the fourth connection end of the active amplification structure is connected with the second output end (OUTP) of the radio frequency amplifier.
Optionally, the rf amplifier is further improved, and the active amplification structure includes:
the first transistor is connected with the third connecting end of the active amplification structure at the first connecting end, connected with the second connecting end of the active amplification structure at the second connecting end and connected with the ground at the third connecting end;
a second transistor, wherein a first connection end of the second transistor is connected with the fourth connection end of the active amplification structure, a second connection end of the second transistor is connected with the first connection end of the active amplification structure, and a third connection end of the second transistor is connected with the ground;
optionally, the rf amplifier is further improved, and the first transistor is a MOSFET or a BJT.
Optionally, the rf amplifier is further improved, and the second transistor is a MOSFET or a BJT.
The MOSFET, metal-oxide semiconductor field effect transistor, abbreviated as MOSFET, includes NMOS and PMOS.
BJTs, bipolar junction transistors, including PNP and NPN.
A R L C parallel resonant network common to rf amplifiers is shown in fig. 1, and its impedance may be expressed as
When in use
The impedance reaches a maximum value, as shown in fig. 4 (the result of presetting the value of R L C).
If multiple stages of R L C parallel resonant networks are connected in series, as shown in FIG. 2, the impedance can be expressed as
When in use
At this time, the impedance has a peak, and the curve is as shown in fig. 5 (there are 3 series-connected R L C parallel resonant circuits, preset the result under the R L C value)The improvement is great. In practical design, optimization among gain, bandwidth and gain flatness is a process of mutual constraint and continuous compromise. For example, increasing the gain tends to narrow the bandwidth, which may cause deterioration of the gain flatness, and the like. The actual design process needs to be valued according to the specific requirements of different systems.
The radio frequency amplifier of the present invention adopts a multi-stage R L C parallel resonant network series structure as a load, and the bandwidth and gain flatness improvement effect can be shown in fig. 10, wherein fig. 10 is used to illustrate the improvement of voltage gain by the load architecture of the present invention, fig. 10 shows 1-stage to represent the voltage gain curve when a single-stage R L C parallel resonant network is used as a load, 2-stage to represent the voltage gain curve when the load structure of the present invention (N-4) is used as a load, and 3-stage to represent the voltage gain curve when a new load structure (N-6) is used as a load, as can be seen from the simulation result in fig. 10, the load structure of the present invention brings at least 4.4-6.3 dB improvement of voltage gain.
Fig. 11 illustrates the improvement of bandwidth and gain flatness by using a voltage gain (25dB) as a reference, where 1-stage in fig. 11 represents a voltage gain curve when a single-stage R L C parallel resonant network is used as a load, 2-stage represents a voltage gain curve when the load structure of the present invention (N ═ 4) is used as a load, and 3-stage represents a voltage gain curve when the load structure of the present invention (N ═ 6) is used as a load.
Compared with the prior art, the load structure and the radio frequency amplifier formed by the load structure can at least bring 4.4-6.3 dB of improvement to voltage gain, or can at least bring 2.5 times of improvement to bandwidth and at least bring 2.6 times of improvement to gain flatness under the same gain.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
fig. 1 is a schematic diagram of a prior art single-stage R L C parallel resonant network structure.
Fig. 2 is a schematic diagram of a conventional single-stage R L C parallel resonant network rf amplifier.
Fig. 3 is a schematic structural diagram of a radio frequency amplifier using a conventional multi-stage R L C parallel resonant network.
Fig. 4 is a schematic diagram of the impedance effect of the rf amplifier shown in fig. 2.
Fig. 5 is a schematic diagram illustrating the impedance effect of the rf amplifier shown in fig. 3.
Fig. 6 is a schematic structural diagram of a load structure according to a first embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a load structure according to a second embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a radio frequency amplifier according to a first embodiment of the present invention.
Fig. 10 is a schematic structural diagram of a radio frequency amplifier according to a second embodiment of the present invention.
Fig. 9 is a schematic diagram of the effect of improving the bandwidth and gain flatness of the rf amplifier according to the present invention.
FIG. 11 is a schematic diagram of the effect of the load structure of the present invention on improving the bandwidth and gain flatness with reference to the voltage gain (25 dB).
Description of the reference numerals
C1 and C2 … … Cn represent different capacitances
L1, L2 … … L n represent different inductances
R1 and R2 … … Rn represent different resistances
M1 denotes a first transistor
M2 denotes a second transistor
A-F represent different electrical nodes
1-stage, 2-stage, 3-stage represent different curves.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art.
As shown in fig. 6, the present invention provides a first embodiment of a load structure for a radio frequency amplifier, comprising:
n parallel R L C circuits connected in series in sequence, wherein the first connection end of the first parallel R L C circuit is used as the first connection end A of the load structure, the second connection end of the Nth parallel R L C circuit is used as the second connection end B of the load structure, and the third connection end
A second connection terminal (i.e. the first terminal) of a parallel type R L C circuit
The first connection end of each parallel type R L C circuit) is connected with a power supply voltage VDD;
wherein, the Mth parallel R L C circuit device parameter and the (N-M +1) th parallel R L C circuit device form a first-stage R L C parallel resonance network, the same device parameter in the same-stage R L C parallel resonance network is the same, the load structure has
The level R L C parallel resonance network, N is the multiple of 2, N > M in the actual design, in view of design difficulty and chip area, the value of N should not be too big.
In this embodiment, N is 4, that is, 2 stages of parallel resonant networks are formed, and it should be noted that, for the division of the parallel resonant networks into stages, each stage of parallel resonant network of the present invention is composed of 2 parallel R L C circuits with identical structures and parameters.
In this embodiment, the first-stage parallel resonant network includes two parallel R L C circuits with identical structures and parameters, and each parallel R L C circuit is composed of a first resistor R0, a first capacitor C0, and a first inductor L0 connected in parallel.
The second-stage parallel resonant network comprises two parallel R L C circuits with identical structures and parameters, and each parallel R L C circuit is composed of a second resistor R1, a second capacitor C1 and a second inductor L1 which are connected in parallel.
Wherein, R0 is not equal to R1, C0 is not equal to C1, L0 is not equal to L1;
as shown in fig. 7, the present invention provides a second embodiment of a load structure for a radio frequency amplifier, comprising:
n parallel R L C circuits connected in series in sequence, wherein the first connection end of the first parallel R L C circuit is used as the first connection end of the load structure, the second connection end of the Nth parallel R L C circuit is used as the second connection end of the load structure, and the third connection end of the Nth parallel R L C circuit is used as the second connection end of the load structure
The second connection end of each parallel R L C circuit is connected with a power supply voltage VDD;
wherein, the Mth parallel R L C circuit device parameter and the (N-M +1) th parallel R L C circuit device form a first-stage R L C parallel resonance network, the same device parameter in the same-stage R L C parallel resonance network is the same, the load structure has
The level R L C parallel resonance network, N is the multiple of 2, N > M in the actual design, in view of design difficulty and chip area, the value of N should not be too big.
In this embodiment, N is 6, that is, 3 stages of parallel resonant networks are formed, and it should be noted that, for the division of the parallel resonant networks into stages, each stage of parallel resonant network of the present invention is composed of 2 parallel R L C circuits with identical structures and parameters.
In this embodiment, the first-stage parallel resonant network includes two parallel R L C circuits with identical structures and parameters, and each parallel R L C circuit is composed of a first resistor R0, a first capacitor C0, and a first inductor L0 connected in parallel.
The second-stage parallel resonant network comprises two parallel R L C circuits with identical structures and parameters, and each parallel R L C circuit is composed of a second resistor R1, a second capacitor C1 and a first diode L1 which are connected in parallel.
The third-stage parallel resonant network comprises two parallel R L C circuits with identical structures and parameters, and each parallel R L C circuit consists of a third resistor R2, a third capacitor C2 and a third inductor L2 which are connected in parallel.
Wherein, R0 ≠ R1 ≠ R2, C0 ≠ C1 ≠ C2, and L0 ≠ L1 ≠ L2;
it will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals refer to like elements throughout the drawings. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Other words used to describe the relationship between elements or layers (e.g., "between … …" and "directly between … …", "adjacent to … …" and "directly adjacent to … …", "on … …" and "directly on … …", etc.) should be interpreted in the same manner.
Further, it will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of exemplary embodiments according to the present invention.
As shown in fig. 8, the present invention provides a first embodiment of the rf amplifier constituted by the first embodiment of the load structure, including:
the first connection end A of the load structure is connected with the first output end OUTN of the radio frequency amplifier, and the second connection end B of the load structure is connected with the second output end OUTP of the radio frequency amplifier; in this embodiment, the load structure N is 2, that is, a 2-stage parallel resonant network is formed;
the first connection end C of the active amplification structure is connected to the first input end INN of the rf amplifier, the second connection end D thereof is connected to the second input end INP of the rf amplifier, the third connection end E thereof is connected to the first output end OUTN of the rf amplifier, and the fourth connection end F thereof is connected to the second output end OUTP of the rf amplifier.
The active amplification structure includes:
a first transistor M1, a first connection end M1A of which is connected to the third connection end E of the active amplification structure, a second connection end M1B of which is connected to the second connection end D of the active amplification structure, and a third connection end M1C of which is connected to ground GND;
a second transistor M2, a first connection end M2A of which is connected to the fourth connection end F of the active amplification structure, a second connection end M2B of which is connected to the first connection end C of the active amplification structure, and a third connection end M2C of which is connected to the ground GND;
alternatively, the first transistor M1 and the second transistor M2 are MOSFETs or BJTs.
As shown in fig. 9, the present invention provides a second embodiment of the rf amplifier constituted by the first embodiment of the load structure, including:
the first connection end A of the load structure is connected with the first output end OUTN of the radio frequency amplifier, and the second connection end B of the load structure is connected with the second output end OUTP of the radio frequency amplifier; in this embodiment, the load structure N is 6, that is, a 3-stage parallel resonant network is formed;
the first connection end C of the active amplification structure is connected to the first input end INN of the rf amplifier, the second connection end D thereof is connected to the second input end INP of the rf amplifier, the third connection end E thereof is connected to the first output end OUTN of the rf amplifier, and the fourth connection end F thereof is connected to the second output end OUTP of the rf amplifier.
The active amplification structure includes:
a first transistor M1, a first connection end M1A of which is connected to the third connection end E of the active amplification structure, a second connection end M1B of which is connected to the second connection end D of the active amplification structure, and a third connection end M1C of which is connected to ground GND;
a second transistor M2, a first connection end M2A of which is connected to the fourth connection end F of the active amplification structure, a second connection end M2B of which is connected to the first connection end C of the active amplification structure, and a third connection end M2C of which is connected to the ground GND;
alternatively, the first transistor M1 and the second transistor M2 are MOSFETs or BJTs.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (8)
1. A load structure for a radio frequency amplifier, comprising:
n sequential stringsThe first connection end of the first parallel R L C circuit is used as the first connection end of the load structure, the second connection end of the Nth parallel R L C circuit is used as the second connection end of the load structure, and the second connection end of the Nth parallel R L C circuit is used as the second connection end of the load structure
The second connection end of each parallel R L C circuit is connected with a power supply voltage;
wherein, the Mth parallel R L C circuit device parameter and the (N-M +1) th parallel R L C circuit device form a first-stage R L C parallel resonance network, the same device parameter in the same-stage R L C parallel resonance network is the same, the load structure has
Stage R L C is connected in parallel with the resonant network, N is a multiple of 2, and N is more than M.
2. The load structure of claim 1 wherein the same device parameters of different levels of R L C parallel resonant networks are different.
3. The load structure of claim 1, wherein: n is 4 or 6.
4. The load structure of claim 1 wherein the parallel R L C circuit is comprised of an inductor, a resistor and a capacitor connected in parallel.
5. A radio frequency amplifier having the load structure of any one of claims 1-4, comprising:
the first connection end of the load structure is connected with the first output end (OUTN) of the radio frequency amplifier, and the second connection end of the load structure is connected with the second output end (OUTP) of the radio frequency amplifier;
the first connection end of the active amplification structure is connected with the first input end (INN) of the radio frequency amplifier, the second connection end of the active amplification structure is connected with the second input end (INP) of the radio frequency amplifier, the third connection end of the active amplification structure is connected with the first output end (OUTN) of the radio frequency amplifier, and the fourth connection end of the active amplification structure is connected with the second output end (OUTP) of the radio frequency amplifier.
6. The radio frequency amplifier of claim 5, wherein the active amplification structure comprises:
the first transistor is connected with the third connecting end of the active amplification structure at the first connecting end, connected with the second connecting end of the active amplification structure at the second connecting end and connected with the ground at the third connecting end;
and a second transistor, wherein the first connection end of the second transistor is connected with the fourth connection end of the active amplification structure, the second connection end of the second transistor is connected with the first connection end of the active amplification structure, and the third connection end of the second transistor is connected with the ground.
7. The radio frequency amplifier of claim 6, wherein: the first transistor is a MOSFET or a BJT.
8. The radio frequency amplifier of claim 6, wherein: the second transistor is a MOSFET or a BJT.
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