TW584984B - A multi-band electronic circuit - Google Patents

Abstract

This invention is related to a multi-band electronic circuit and its design methodology. The application frequency band is switched from one band to another by changing the capacitance between the input and output terminals of a transistor. Compared with the prior art, our invention does not need off-chip inductor/capacitor or additional wire bonding, which is helpful to the enhancement of the yield and throughput and the reduction of cost.

Description

584984 玖 Y description age of invention (the description of the invention should be stated ... the technical field to which the invention belongs, the prior art, the content, the embodiments, and the drawings are briefly explained) [Technical field to which the invention belongs] The present invention relates to a new multi-band Electronic circuit (a muti-band electronic circuit) and design method thereof. In particular, a change in feedback capacitance between the output end and the input end of a transistor is used to achieve a frequency band switching amplifier and a design method thereof. '' [Previous technology] The wireless communication industry has evolved to a state of multiple standards / multiple services, such as wireless local area networks (Wireless

Local Area Network (WLAN) uses 2.4 GHz, 5.2 GHz, 5.7 GHz frequency bands, GSM mobile phones use 0.9 GHz, 1.8 GHz, 1.9 GHz frequency bands, and Global Positioning System (G 丨 ob System GPS) uses the 1.5 GHz band. Therefore, it is better to integrate multiple standards in the same transceiver chip, that is, to design and manufacture a multi-band transceiver. The main challenge in designing a multi-band transceiver is to improve the capabilities of the communications transceiver while using a minimum of extra circuitry. The strategy of low noise amplifiers in more than ten band transceivers is to design a low noise amplifier that meets that frequency band for a certain frequency band. In other words, to design a tri-band transceiver that can use the 0.9 GHz, 1.8 GHz, and 1.9 GHz bands, two more low-noise amplifiers are needed to respond to three different frequencies. Therefore, when designing a low-noise amplifier, the related gain, noise figure, input impedance, and output impedance are all designed for a specific frequency band. As a result, the area and power consumption of the entire circuit of the multi-band transceiver is much larger than that of the single-band transceiver. Take the conventional superheterodyne receiver with integrated multi-band applications shown in the first figure as an example: antenna 100, frequency band selection filter 101, low noise amplifier 103, and image cancellation filter 1 〇4 to the channel selection filter 107 is an independent receiving path of the application frequency band 1. From the antenna 10, the band selection filter 11, the low noise amplifier 112, the image removal filter 113 to the channel selection filter 116, it is an independent receiving path for the application frequency. From the antenna 118, the band selection filter 119, the low noise amplifier 121, the image removal filter 122 to the channel selection filter 125, it is an independent receiving path for the application frequency band three. ^ The independent receiving path of frequency band 1 is used for explanation. After the signal is received by antenna 100, it first passes the frequency and selection filter 101 to filter out the frequency band other than the application frequency band 1, and then passes through the low noise amplifier of the next stage. 103 to amplify the signal and reduce the increase in noise. Next, the image noise filter 104 removes noise at the image frequency. After the frequency is reduced, the channel selection filter 10 卞 selects one of the application frequency bands. The next part is the circuit shared by the application frequency band 1, the application frequency band 2, and the application frequency band 3. After confirming the signal as an application frequency band, the frequency is reduced and the analog-to-digital converter 128 is used to digitize the signal. The signal processing 129 processes a digitized signal. As can be seen from the above description, when integrating receivers for multi-band applications, the traditional approach is to design the application circuits of each band separately and then put them all together. The low-noise amplifier for the key circuits in the receiver must also be designed for different frequency bands. In this way, the area and power consumption of the entire circuit will inevitably increase. In the previously published papers, for integrated circuits of multi-band applications, this method is adopted (that is, different low-noise amplifiers are used to handle different frequency bands). You can refer to Shi Yi, T. Antes And C. Conkling's paper published on Microwave RF in December 1996 · "RF chip set fits multimode cellular / PCS handsets,". II. S. Wu's and Β Razavi's in December 1998 Paper published on IEEE JSSC: A 900_MHz / 1.8-GHz CMOS receiver for dual-band applications. [J Continuation Page (Inventive Description Page is insufficient, please note and use Continued Page 7 Invention Description_Page 3, R. Magoon, I. Koullias, L. Steigerwald, W. Domino, N. Vakillian , E. Ngompe, M. Damgaard, K. Lewis, and A. Molna, published in the February 2001 issue of ISSCC Digest of Technical papers: "A triple-band 900/1800/1900 MHz low- power image-reject front-end for GSM, ". 4. The paper published by KK L. Fong on ISSCC Digest of Technical papers in February 1999. Dual-band high-linearity variable-gain low-noise amplifiers. for wireless applications, "〇 A recent paper by H. Hashemi and A. Hajimiri on IEEE Transactions on Microwave Theory and Techniques in January 2002:" Concurrent Miiltiband Low-Noise Amplifiers-Theory, Design, and Applications, ' '' The same low-noise amplifier is used to process multi-band signals. This kind of multi-band low-noise amplifier can be satisfied by using the same low-noise amplifier. The requirements of the same frequency band, so in the integration of multi-band applications, the design of the transceiver can be simplified (no need to design multiple different low-noise amplifiers). This can also reduce the area of the entire system circuit and reduce power consumption, The reduction in area and reduction in power consumption is very advantageous for the commercialization of circuits. The design method of low noise amplifiers proposed by H. Hashemi and A. Hajimiri is different from that of traditional low noise amplifiers. For the design method of the conventional low-noise amplifier, please refer to the second figure. It uses the source inductor 207 to generate the resistance (usually 50 ohms) required for input impedance matching, and then uses the inductor 201 to make it look like The total input capacitance of the gate terminal achieves resonance at the desired frequency band. At the output end, a resonant cavity formed by the inductor 204 and the capacitor 208 is used to select the desired frequency band. About $ H · Hashemi's and A · Hajimiri's For the design method of multi-band low noise amplifier, please refer to the third figure. At the input end, in addition to the conventional inductor 310 which can generate the resistance (usually 50 ohms) required for input impedance matching and the inductor 304 which can reach the desired frequency band, it also adds a parallel combination inductor 307 and Capacitance 306. The purpose is to add another resonance frequency to achieve the function of multi-band input matching. At the output terminal, in addition to the conventional parallel resonant cavity composed of an inductor 312 and a capacitor 313, a series combination inductor 301 and a valley 302 are also added. The purpose is also to increase another resonance frequency to achieve the function of selecting the desired multiple frequency bands. In short, H. Hashemi's and A. Hajimiri's use multi-band applications by increasing the number of inductors and capacitors. There are many disadvantages to this design approach. ^ First, 'd' counts another five inductors (ie, inductor 301, inductor 304, inductor 307, inductor 310, and inductor 312, where inductor 301 and inductor 304 are off-chip inductors) and three capacitors (including Capacitor 302, capacitor 306, and capacitor 313, of which capacitor 302 is an off-chip capacitor. Compared with the design of a traditional low-noise amplifier (please refer to the second figure, it has the inductance on three chips: 201, 204, 207). And capacitors on one chip: 208) Two more inductors and two capacitors are required. Due to the increase in the number of inductors and capacitors, even inductors and capacitors outside the chip are used (much larger than the area of the inductors and capacitors on the chip). The area of the entire circuit becomes large, and there is no way to integrate the entire design on the same chip. The inductors and capacitors outside the chip must be wired and wired extraly, which increases costs and reduces reliability. This is very detrimental to the mass production and commercialization of integrated circuits. When designing low-noise amplifiers, the inductance is usually minimized. One reason is that the inductor occupies a large area. One is that the inductor on the chip has a low Qualify Factor, which will cause the noise to deteriorate. Therefore, when designing a low noise amplifier, it is generally necessary to avoid the use of inductors as much as possible. The method proposed by H H ^ and A · Hajimiri is to increase the use of inductance. Therefore, there is a great need for an amplifier that does not increase the number of inductors and does not require additional wiring, but can still handle s multi-band amplifiers. 8 Continued pages (When the invention description page is insufficient, please note and use the continuation page 584984

[Content] The purpose of the present invention is to provide a multi-band amplifier and a design method thereof, which can only match the impedance of the input impedance of the field to the field, and does not increase the number of inductors used, and does not need to be added. Quantity, do n’t wire 1 extra line, the invention refers to the double-connected body or hetero-junction bipolar transistor (Bip〇lar juncti〇n Ding Yiru,

TransistGr) The electric capacity between the base and the collector is electrically variable. = = The component with variable capacitance is connected to change the capacitance of the transistor wheel (bipolar electric base gate), and the duty ratio changes. Take the bipolar electric B0 body as an example, look at the total input capacitance of the human base terminal, which contains the base electrode, which is caused by the base-collector capacitor). At this base, the electrical transmission inductance can resonate at the desired frequency. When changing the base value of the base and collector _ external electrical connection i ΐ ΐ 兀 ΐ, the total input capacitance seen into the base terminal can be changed. In this way, by looking into the enemy ’s favor, you will lose the chance to see it. In the present invention, the capacitor is electrically connected between the base and the collector (or between the gate and the drain). The capacitor's base (or gate) end will see this capacitance being amplified, so the capacitance value of the capacitive element that is electrically connected between the base and the collector (or between the gate and the drain). Therefore, compared to the conventional art, this creation does not need to increase the inductance, and 2 "20% is smaller than § = which means that the area is also increased. Also, this creation does not require an object line. The entire circuit is made on a single chip. The advantages can be more obvious and easy to implement. [Embodiment] Please refer to the fourth figure, which is a circuit diagram of this embodiment of the 2.4 / 5.2 / 5.7 GHz multi-band processing function. A bipolar transistor is used, but a field-effect transistor is also possible. The first resistor 407 and the first resistor 412 are both 300 ohms; the third resistor 410 is 600 ohms; the DC blocking / AC planar capacitor 409 is 3pF; the emitter area of the first transistor 408 and the second transistor 413 are 12.18 square micrometers. The manufacturing process is iSMC 0.35um SiGe BiCMOS process. In this multi-band low noise amplifier, we will combine one of them in series. The switch 403 and a capacitor 415 are electrically connected between the base terminal and the collector terminal of the first-stage transistor 408 in the amplifier. By turning on or off the switch, the total of the first-stage transistor base terminal can be changed. Input capacitor CIN. CIN and The inductor 404 on the pole constitutes a resonant cavity to achieve input impedance matching. When the switch 403 is not conductive, that is, the switch 403 is open, at this time, the inductor 404 connected to the base in this embodiment and the first stage are seen. The resonant cavity composed of the total input capacitance qn at the base of the transistor can achieve input impedance matching at 5.2 / 5.7 GHz (WLAN wireless local area network IEEE 802.11a). When the switch 403 is turned on, that is, when the switch 403 is close to a short circuit, the first Since one capacitor 415 is connected in parallel between the base terminal and the collector terminal of the first-stage transistor, the total input capacitance cIN seen from the base terminal of the first-stage transistor is increased, so that the inductance 404 connected to the base terminal and the first The resonant cavity composed of the total input capacitance c1N of the base of the transistor is able to achieve input impedance matching at 2.4 GHz (WLAN wireless area network IEEE 802.11b). At the output 414 part, we use a feedback resistor 410 Achieve output impedance matching. Without output impedance matching (such as zero-IF or low-IF receiver), output impedance matching can be achieved without feedback resistor 410. Resistor 407 and resistor 412 are divided It is the load of the first-level transistor and the second-level transistor. Although the resistor is used as the load in this embodiment, it is also possible to use an inductive or capacitive load as needed. The point is that the input can achieve multi-band resistance. When the instruction sheet is not enough, please note and use the continuation invention description_gastric impedance matching. Since we only use one inductor 404, and the inductor is made on a chip, not only the entire circuit can be completely implemented on a single chip, And the circuit area is very small. This is very advantageous for commercialization. For the performance of this multi-band low-noise amplifier in terms of gain and input impedance matching, please refer to the fifth and seventh figures. Under the operating conditions (that is, when the switch is disconnected), the gain (scattering parameter Su) of this multi-band low-noise amplifier reaches 22dB and 20dB at 5.2 / 5.7GHZ (refer to the fifth figure). Under the condition that the switch is turned on, the gain (scattering parameter S ^) of this multi-band low-noise amplifier reaches 23dB at 2.4 GHz (refer to the seventh figure). Under the operating conditions (that is, when the switch is open), the degree of matching of this multi-band low-noise amplifier to the input impedance (usually based on the scattering parameters).

Input return loss Sn), between 5.15 GHz and 5.35 GHz are below -20 dB (lower is better) 'Between 5.725 GHz and 5.825 GHz are below -16 dB (lower The better). Under operating condition two (that is, when the switch is turned on), the matching degree (Su) of this multi-band low-noise amplifier to the input impedance is below -22 dB between 2.4GHz and 2.5GHz ( The lower the better). ^ For the performance of this multi-band low noise amplifier on the noise index, please refer to Figures 6 and 8. Under the operating conditions (ie, when the switch is disconnected), the noise index of this multi-band low-noise amplifier is 2.75dB and 3.0dB (the lower the better) at 5.2 / 5.7GHz, and under the second operating condition ( That is, when the switch is turned on), the noise index at 2.40.112 is 2.6118 (the lower the better). Generally for 802.113 and 802.11b wireless local area network (WLAN) applications, the noise index of the low-noise amplifier is only required to be less than 5 dB, and the input (output) foldback loss is less than 10 dB, and the gain is greater than 10. dB is enough. Therefore, we can say that according to the embodiment of this creation: 2.4 / 5.2 / 5.7GHz multi-band low-noise amplifier, its performance in terms of gain, noise index, and input impedance matching is 2.4 GHz, 5.2 GHz, and Both 5.7 GHz have fairly good implementation results in both bands. Moreover, if the input return loss inputreturn10ssSii is to be lowered ', the emitter of the first-stage bipolar transistor is not directly grounded, but the emitter is connected to one end of an inductor, and the other end of the inductor is then grounded. Compared with the conventional multi-band low-noise amplifier, this creation uses only a single amplifier to achieve input impedance matching in multiple frequency bands. It does not increase the number of inductors, nor does it increase the occupied area significantly. . Although a series-connected switch and capacitor are electrically connected between the transistor output and input terminals in this embodiment, a variable capacitor is also possible. In fact, the main technical content of the present invention will be published in the International Solid State Circuit Conference in February 2003. This conference is the top conference of circuit conferences. In summary, it is known that the multi-band electronic circuit created in this case has industrial applicability, novelty, and progress, which meets the requirements of invention patents. However, the above is only a preferred embodiment of this creation, and is not intended to limit the scope of implementation of this creation. That is to say, all equal changes and modifications made in accordance with the scope of the patent application for this creation are covered by the scope of this creation patent. [Schematic description] The meanings of the diagrams are as follows: The first diagram is a conventional multi-band transceiver integration method used for multi-band applications. The second diagram is a circuit diagram of a conventional low-noise amplifier. The third diagram is H.Hashemi's. And A. Hajimiri ’s multi-band low-noise amplifier circuit diagram 2] Continued page (When the invention description page is not enough, please note and use the continuation page 584984 Invention description Continued The fourth figure is the creative embodiment ( 2.4 / 5.2 / 5.7GHz multi-band low-noise amplifier) circuit diagram The fifth figure is the creative example (2 · 4/5 · 2 / 5.7 GHz multi-band low-noise amplifier) under operating conditions. Power gain and input foldback Characteristics of loss vs. frequency Figure 6 This creative example (2.4 / 5.2 / 5.7 GHz multi-band low-noise amplifier) shows the characteristics of noise index vs. frequency under operating conditions. Figure 7 shows this creative example (2.4 / 5.2 / 5.7 GHz multi-band low noise amplifier) under operating condition two Power gain and input foldback loss vs. frequency characteristics The eighth figure is the creative example (2.4 / 5.2 / 5.7GHz multi-band low noise amplifier) under operating condition two Noise index frequency Characteristic m m

Reference number in the drawing 100 antenna 103 low noise amplifier 106 local oscillation signal 109 antenna 112 low noise amplifier 115 local oscillation signal 118 antenna 121 low noise amplifier 124 local oscillation signal 127 intermediate frequency signal 200 input 203 voltage source 206 transistor 209 output 302 capacitor 305 pad 308 field effect transistor 312 inductor 101 band selection filter 104 mirror elimination filter 107 channel selection filter 110 band selection filter 113 mirror elimination filter 116 channel selection filter 119 frequency band Selection filter 122 Mirror elimination filter 125 Channel selection filter 128 Analog-to-digital converter 201 inductor 204 inductor 207 inductor 300 input 303 bias 306 capacitor 309 field effect transistor 313 capacitor 102 band-pass filter 105 band-pass filter 108 band-pass filter 111 band-pass filter 114 band-pass filter 117 band-pass filter 120 band-pass filter 123 band-pass filter 126 band-pass filter 129 digital signal processing 202 bias voltage 205 transistor 208 capacitor 301 inductor 304 Wiring inductance 307 inductance 310 inductance 314 output terminal

Continued pages (If the invention description page is insufficient, please note and use the continuation page

584984 Description of the invention_page 400 input 401 current source 403 electronic switch 404 inductor 406 voltage source 409 capacitor 412 resistor 415 capacitor 407 resistor 410 resistor 413 transistor 402 capacitor 405 collector current 408 transistor 411 power supply 414 output

Claims (1)

miWmm 1 · A design method for multi-band ^ sub-circuits, which uses electronic circuit towels to change at least the capacitance between the wheel's output and the input of the transistor, so that the transistor's input impedance and electrical connection are connected to the At least the -inductor of the transistor input terminal is switched from a certain resonance frequency band to another resonance frequency band, thereby achieving the switching of multiple frequency bands. 2. The method for designing a multi-band electronic circuit as described in item 1 of the patent application, wherein the transistor is a bipolar transistor. 3. The design method of the multi-band electronic circuit in item 1 of Shen Qing's patent, where the transistor is a field effect transistor. 4. The design method of the multi-band electronic circuit according to item 2 of the patent application, wherein the input terminal of the transistor is the base terminal and the output terminal is the collector terminal. 5. The design method of the multi-band electronic circuit according to item 3 of the patent application, in which the input terminal of the transistor is an input terminal and the output terminal is a sink terminal. 6. The design method of the multi-band electronic circuit as described in the first item of the patent application, wherein the capacitance between the output terminal and the input terminal of the transistor is changed in series with one of the parallel connection between the output terminal and the input terminal of the transistor. This is achieved by a switch and a capacitor. 7. The design method of the multi-band electronic circuit according to item 4 of the patent application, wherein the capacitance change between the collector terminal and the base terminal of the transistor is combined in series with one of the collector terminal and the base terminal of the transistor in parallel. This is achieved by a switch and a capacitor. 8. The design method of the multi-band electronic circuit according to item 5 of the patent application, wherein the capacitance between the gate terminal and the drain terminal of the transistor is changed by series connection with one of the gate terminal and the drain terminal of the transistor in parallel. This is achieved by a switch and a capacitor. 9. The design method of the multi-band electronic circuit according to the first patent application range, wherein the capacitance change between the output terminal and the input terminal of the transistor can be changed by connecting one of the output terminal and the input terminal of the transistor in parallel. Capacitors. 10. The design method of a multi-band electronic circuit such as item 4 of the scope of patent application, wherein the capacitance change between the collector terminal and the base terminal of the transistor can be changed by connecting one of the transistor's output terminal and the input terminal in parallel. Capacitors. 11. For the design method of the multi-band electronic circuit in the fifth item of the patent application, the gate terminal of the transistor is fixed to 584984 '' 2¾. "Supplements 丨-The change in capacitance is made by the output terminal of the transistor It can be reached with the input terminal and a variable capacitor. 12. = Multi-band electronic circuit, including—transistor Zhao; one of the inductors electrically connected to the input terminal of the transistor is connected to the input terminal of the transistor and the wheel. A capacitance variable element between the output terminals; by the change of the capacitance variable element, the circuit is switched from a certain resonance to another resonance frequency. 13 · = please patent as many as 12 _Tru, its electric bipolar transistor. Second, the multi-band electronic circuit of the 12th item of the patent, where the transistor is a field effect transistor. The multi-woven electronic circuit of the 12th item of the scope of the patent application, where The capacitance variable element is a series-connected switch and a capacitor. The guaru multi-band electronic circuit of item 12 of the patent application scope, wherein the capacitance variable element is a variable capacitor. ^ Please refer to item 13 of the patent scope. Multi-band electronics Circuit, in which the wheel input terminal of the transistor is the output terminal and the collector terminal is the same. = · If the application is 17 ⑽ Lai Lu Road, its m radiation terminal is grounded. • If the multi-band electronic circuit of item 17 of the patent application, The emitter terminal of the transistor is connected to one end of an inductor, and the other end of the inductor is grounded. 20. The multi-band electronic circuit of item 14 of the patent scope is required, so that the input terminal of the transistor is closed and output. The terminal is the drain terminal. For example, the multi-band electronic circuit of the patent application No. 2Q, where the source of the transistor is grounded. • The multi-band electronic circuit of the patent application No. 2G, where the source of the transistor is connected One end of an inductor, and the other end of the inductor is grounded. 23. The multi-band electronic circuit of item 13 or item 17 or item 18 or item 19 of the patent scope of claim 2, wherein the capacitor variable element is a series One of the combination of a switch and a capacitor.% Russian_13th or 17th or 18th or frequency band electronic circuits, where the capacitance variable element is a variable capacitor. Technical application = patent scope 14 or 2 () The multi-band electronic circuit of item 21 or item 22, wherein the capacitance variable element is a series combination of a switch and a capacitor. Such as the scope of patent application for item 14 or 20 or 21 or 22 The multi-band electronic circuit of this item, of which □ continued on the next page (please note and use the continuation page if the patent application page is not enough to use) 14 i said that the capacitance f changing element is a variable capacitor. Shen Xiao Patent Scope Continued A multi-bottle J5 * 啻 工 帝 w. A a AL ^ .l One switch and a capacitor. 29 · If the multi-band electronic circuit of the 27th patent application scope is said to be the multi-band electronic circuit of the 27th patent application scope, wherein the capacitance variable element is a series combination · 'wherein the capacitance variable element is a variable Capacitor 30. If the multi-band electronic circuit of item 27 or item 28 or item 29 of the scope of patent application is applied, the emitter terminal of the first-stage bipolar transistor is first connected to the-terminal of the inductor, and the other end Ground. 31 ·-A multi-band electronic circuit, which includes a _ field effect transistor with a source ground; an inductor connected to the first field effect transistor; and an inductor connected to the second field effect transistor; The first resistor, a power source connected to the other end of the first resistor; a capacitor connected to the drain terminal of the first field effect transistor; the source grounded and 'connected to the other end of the capacitor A second field-effect transistor; a second resistor connected to the opposite end of the second field-effect transistor; a power source connected to the other end of the second resistor; connected to the gate of the second field-effect transistor A third resistance between the drain terminal and the drain terminal; and a variable capacitance element connected between the gate and the drain terminal of the first field effect transistor; the capacitance of the variable capacitance element changes from the first field The input impedance and the inductance seen by the extreme effect thyristor are switched from one resonance frequency band to another resonance frequency band, thereby achieving multi-frequency band switching. 32. The multi-band electronic circuit according to item 31 of the application, wherein the capacitance variable element is a series combination of a switch and a capacitor. 33. The multi-band electronic circuit according to item 31 of the application, wherein the capacitance variable element is a variable capacitor. 584984 ^: 1¾2¾ $ One gas supplement 50 ^ Please refer to the multi-band electronic circuit of the 31st or 32nd or 33rd patent scope, where the source terminal of the first field effect transistor is first connected to one end of an inductor, and the inductor The other end is grounded. 16