TW578208B - Phase shifting lithographic process - Google Patents

Abstract

A first phase shift mask is prepared, which comprises thereon a first phase shift clear area, a second phase shift clear area situated adjacent to the first phase shift clear area, a vertical control chrome line section disposed at a boundary between the first phase shift clear area and the second phase shift clear area, and a horizontal opaque area connected to the vertical control chrome line section in an orthogonal manner. A first exposure process is implemented to expose the photoresist layer to light transmitted from clear areas of the first phase shift mask so as to form a vertical fine line image corresponding to the vertical control chrome line section disposed at a boundary between the first phase shift clear area and the second phase shift clear area, a horizontal unexposed area connected to the vertical fine line image in an orthogonal manner, and a peripheral unexposed line pattern. A second phase shift mask is prepared, which comprises thereon a third phase shift clear area, a fourth phase shift clear area situated adjacent to the third phase shift clear area, a horizontal control chrome line section disposed at a boundary between the third phase shift clear area and the fourth phase shift clear area, and a vertical opaque area connected to the horizontal control chrome line section in an orthogonal manner for shielding the vertical fine line image on the photoresist layer. A second exposure process is implemented to expose the photoresist layer to light transmitted from clear areas of the second phase shift mask so as to form a horizontal fine line image corresponding to the horizontal control chrome line section disposed at a boundary between the third phase shift clear area and the fourth phase shift clear area.

Description

578208 V. Description of the invention (1) The technical field to which the invention belongs The present invention relates to a semiconductor lithography process (lithographic process) 'especially a projection optical (lithography process) combined twice Double exposure technology and two Phase Shift Masks (PSM) can effectively solve the phase conflict (phase conf 1 i ct) problem of two similar tiny components, and simplify the component pattern of the 45 degree angle Photomask making. The two-phase displacement photomask of the present invention is placed in the same position during two exposure steps without the need for relative displacement or rotation. Prior technology In the integrated circuit manufacturing process, the lithography process has long been an indispensable technology. At the same time, the lithography process is also one of the main factors limiting the critical size of the component. Through the lithography process, semiconductor manufacturers can smoothly and accurately transfer electronic circuit layout patterns onto semiconductor wafers. The lithography process is mainly to first form the designed pattern such as a circuit pattern or a layout pattern of the planting area on one or more photomasks, and then use exposure to step and scan the pattern on the photomask. A stepper & scanner is transferred to the semiconductor wafer. At present, the more mature lithography technology is the use of optical lithography technology. The light sources used include KrF laser (248nm) 'ArF laser (193nm), F2 laser (157nm), and EUV (extreme UV). KrF Thunder

Page 8 578208 V. Description of the invention (2) The radiation exposure technology is the most mature, and the more advanced non-op ti lithography technology, such as e-bearn, is still in the development stage. As non-optical lithography technology is not mature and the cost is too high, in order to extend the life cycle of UV lithography equipment and use existing UV lithography equipment to make nano- or sub-nano-level components, many resolution enhancement technologies (Resolution Enhancement Technique (RET) was proposed. In addition to reducing the cost of wafer manufacturers, these RET methods can also improve the performance of the lithography process. For example, Kevin G. Kemp in US Patent No. 5,308,741, owned by Motorola, Inc., discloses a method of using double exposure The lithography method with one (or two) phase shift masks uses a second exposure to horizontally shift or rotate the phase shift mask relative to the wafer to form a desired miniature pattern on the wafer. However, because this method involves the second exposure, the mask needs extremely precise positioning to be able to achieve it correctly. Small displacements (X-axis direction, Y-axis direction, or rotation), so its implementation is more complicated and practical. And the range of error still needs to be further proved: besides, the method proposed by Yi Po cannot effectively solve the phase conflict (phase conf 1 ict) problem of two similar # 小 70 件. In 1999, Yao_Ting Wang et al. In Numerical Department τ u ；; 〇 〇 τ ... ^ Α

Technologies,! Nc., Hereinafter referred to as Ντ] There is a US patent No. 5,858, 580, which discloses a kind of

578208 V. Description of the invention (3) The technology of reducing the component size to the minimum by using a wavelength light source, which uses an alternating phase shift mask (Alt-PSM) combined with double exposure lithography technology. In US Patent No. 5,8,58,580, the double exposure lithography technique requires the use of a single-phase trimming mask in addition to the use of an alternate phase shift mask. (Ϊ́ rim mask) to complete the graphics transfer. However, the Optical Proximity Correction (OPC) technology using an alternating phase shift mask still has some disadvantages, including those in the phase shifted and non-phase shifted regions. The problem of transmissio imbalance caused by light and manufacturing defects on alternating phase shift masks. In addition, the method proposed by Wang Yaoding et al. In U.S. Patent No. 5,888,580 is also unable to effectively solve the phase conflict problem of two similar micro-components.

Please refer to FIG. 1. FIG. 1 shows the method proposed by NT I. To expose two similar micro-element patterns 10 on a photoresist layer, the required phase shift mask (PSM) layout 20 and the trimming mask are required. (Trim Mask) Layout 3 0. As shown in FIG. 1, the pattern of two similar micro-elements includes a vertical thin line pattern 101, a horizontal thin line pattern 102, a vertical thin line pattern 104, and a horizontal thin line pattern 103, of which vertical The thin line pattern i 〇 丨 is connected to the horizontal thin line pattern 1 〇 2 'vertical thin line pattern 〇 04 is connected to the horizontal thin line pattern 1 0 3 to form a symmetrical pattern close to the one shown in the figure. Vertical thin line pattern 101, horizontal thin line pattern 102, vertical thin line pattern 104, and horizontal

578208

The line width of the fine line pattern 103 is assumed to be d! ', For example, D is between 0.01 micrometer and 0 micrometer. The distance between the two horizontal thin line patterns 102 and 103 is, for example, 25 between 0.2 μm and 2.5 μm. If a pattern 10 is to be exposed on a positive photoresist layer (not shown in 2), according to the design rule proposed by NTT: Then, a phase shift mask layout 20 and a trim mask layout 3 are required. The phase shift mask layout 20 includes a control chromium line (contr01, chrome) 201, a control chromium line 202, a control chromium line 203, a control chromium line 204, and an opaque area 206. To make a vertical thin line pattern! 〇 丄 imaging requires a 0-degree light transmission area 210 and a 180-degree phase shift light transmission area 212 to produce phase contrast. Similarly, in order to image the vertical thin line pattern 104, the phase shift mask layout 20 needs to have a 10-degree light-transmitting area 2 1 4 and a 180-degree phase-shift light-transmitting area 2 1 2 to produce a relative ratio. However, as shown in the area 250, in this way, the horizontal thin line pattern 102 and the horizontal thin line pattern 103 cannot be imaged (because there is no comparison in the area 2 丨 2). Please refer to FIG. 2. FIG. 2 shows another conventional method proposed by NT I in 2002. 'To expose a micro-element pattern 4 on a photoresist layer, a phase shift mask (PSM) is required. Layout 50 and trim mask layout 60. As shown in FIG. 2, the micro-element pattern 40 includes a vertical thin line pattern 401 and a horizontal thin line pattern 402 which are orthogonally connected to each other. If a pattern 40 is to be exposed on a positive photoresist layer (not shown), a phase shift mask layout 50 and a trimming mask layout 60 are required, respectively. Among them, the phase shift mask layout 4 0 includes a control chromium line 5 0 1, a control chromium line 5 0 2, and a 0-degree transmission

Page 11 578208 V. Description of the invention (5) Light area 5 0 5 a and 50 5 b and 180 degree phase shift light transmission area 5 0 6 a and 506 b, and opaque area 509.0 light transmission Area 505 pain 505 b can be compared with the light-transmissive area 506 a with a phase shift of 180 degrees, so it can form a horizontal thin line on the photoresist layer (not shown) through the destructive interference of the exposure light source Pattern 402, the same, the 0 degree transparent area 505 flag 180 degree phase shifted light transmitting area 506b generates a relative ratio, so the destructive interference of the exposure light source can be applied to the photoresist layer (not significant) No) A vertical thin line pattern 4 0 1 is formed thereon. However, because the 0 ° transparent area 50 5b and the 180 ° phase shift transparent area 506b also have a relative ratio: a small thin line pattern with a 45 ° angle will be generated at the corner 550. This 45 product The tiny thin line pattern must be removed at the second exposure by using a k-fill mask 6 0 'with a missing 6 5 0 at a 45-degree angle. But this — this makes the production of photomasks very complicated, resulting in increased costs. ^ From the above, it can be seen that the conventional semiconductor optical lithography technology with phase shift masks has not been satisfactory in terms of implementation quality and performance, and 拄 has further improved. SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to provide an optical lithography method 'combining a double exposure technique and a dual-phase shift mask, which can effectively solve the conflict problem between two similar micro-elements.

578208 V. Description of Invention (6)

To achieve the above object, the present invention provides an optical lithography method for forming a tiny thin line pattern on a photoresist layer on a wafer, and the tiny thin line pattern includes a vertical thin line pattern and a horizontal thin line pattern orthogonally connected. In the vertical thin line pattern, the optical lithography method includes the following steps: providing a first phase shift mask layout including a first phase shift transmission area, and a first phase shift transmission area adjacent to the first phase shift transmission area; A two-phase shifted light-transmitting area, a vertical control chrome line pattern is provided at the boundary of the first phase-shifted light-transmissive area and the second phase-shifted light-transmissive area, and a horizontal opaque area is orthogonally connected to the vertical control. A pattern of chrome lines; a first exposure process is performed to irradiate the first phase shift mask layout with the light passing through the first phase shift transparent region and the second phase shift transparent region 'on the photoresist layer Forming the vertical thin line pattern, a horizontal unexposed area orthogonally connected to the vertical thin line pattern, and a peripheral unexposed thin line pattern; providing a second phase shift mask layout, It includes a third phase-shifted transmission region, a fourth phase-shifted transmission region adjacent to the third phase-shifted transmission region, a horizontally controlled chrome line pattern disposed in the third phase-shifted transmission region, and the first The boundary of the four-phase shifting light-transmitting area and a vertical opaque area are orthogonally connected to the horizontal control chrome line pattern to shield the vertical thin line pattern; and a second exposure process is performed to make light irradiate the second Phase shift mask layout. The light passes through the third phase shift light transmission area and the fourth phase shift light transmission area to form the horizontal thin line pattern orthogonally connected to the vertical thin line pattern on the photoresist layer.

Page 13 578208 V. Description of the invention (7) In order to make the review committee of Bei step closer and the technical content, please refer to the characteristic map of g, ^. However, the drawings are for reference and explanation only. For those with restrictions. It is not used to implement the embodiment of the present invention. Please note the preferred embodiment, and the actual photoresist pattern of the present invention should be explained based on the other semi-instructions. Film production process, and various light sources. Such as the close thin line light vertical thin line pattern flat thin line pattern 1 1 0 4 orthogonal 11 0 2 and below horizontal meters or only δ months See Figure 3, the same-^, Cl nc ii λ, ~ Figure 2, · ,,, The present invention is not a good example of the present invention, and the scheme is only one of the present inventions, which is equivalent to 2 inventions. The invention of this invention In April this year, μ, the scope of the claims shall prevail. Weifang ί ί ί: 2 only shows part of the photomask layout 2 and ίίΙΙ used in the process or chip should be of the second type: those who change Cf in the reference to this issue, should belong to the scope of the present invention The invention is particularly suitable for various projections: and one of the purposes of the invention is to form two phases = case i1. , Wherein the minute thin line pattern 11〇ΐΓ;, orthogonal to the vertical thin green pattern 1101, ill, the vertical thin line pattern 1 104 and the vertical thin line flat thin line pattern 1103. Horizontal Fine Map 103 Thin Line Patterns 1103 are close to each other, with a pitch of only page 578208

0 · 1 to 1 · 0 microns There are no restrictions on the gate pattern or conductance, and its. The etched line width of the tiny thin line pattern can reach the light case 11 0 can be used as a mask, or other source wavelength limit or V. Description of the invention (8) A few micrometers, such as fine polycrystalline fragmentation, and the limit here under. According to the present invention, 'if one light P and JS, resist, in the preferred embodiment, positive light i) \ (^ 1 photoresistor or negative husband η., Two phase shift photoresist photoresist layers need to be prepared in advance Can be applied in a conventional manner and combined with the second exposure.

According to a preferred embodiment of the present invention, when performing the (= not / not) table: using, the displacement mask layout 70 is used, and the phase mask layout 8 is used before the first warm-up. . Please note, this; exposure; phase: when the light is shifted (when the same crystal cube is exposed), the two phases ^ ^ are exposed at exactly the same position at the:-, and the photomask and the second cover of the wafer are related) J = = Ϊ: The phase shift reticle layout 70 and 80 are aligned: stacked exposure 'without shifting. Phase Inscriptions Canganli / 1 8Π Sound Phase Child S, the first mask layout 70 and 80 are 0 degrees (180 degrees phase = first mask. Only the eye mask is shifted. The horror board 70 contains opaque vertical control chromium. The line pattern 7〇1 has a line width of ^, and the main 1 controls the line width of the vertical thin line pattern 11 〇 丨. In other embodiments of the present invention, the opaque control chrome line pattern 70 丨 may also be omitted. Phase shift light The cover layout 70 also includes an opaque horizontal trimming pattern 702, which is related to the vertical control ^

The line pattern 7 0 1 is orthogonally connected to cover the subsequent photoresistive area where a horizontal thin line pattern 11 02 is to be formed, and the line width is D4 (DA to DO. Phase shift mask layout '7 0 also includes an opaque vertical Control the chrome line pattern 704, its line width is the same

Page 15 578208 V. Description of the invention (9) is D 3, which is mainly used to control the line width of the vertical thin line pattern 11 0 4 and an opaque horizontal trimming pattern 7 0 3, which is the same as the vertical control chrome line pattern 7 0 3 Orthogonal connection 'is used to shield the subsequent photoresist area where a horizontal thin line pattern 11 03 is to be formed. In other embodiments of the present invention, the opaque control chromium line pattern 704 may be omitted. In addition, the phase shift mask layout 70 also includes a 0-degree phase-change light-transmitting region 7 1 0 and a 180-degree phase-change light-transmitting region 7 1 2. The light passing through the 0-degree phase-changing light-transmitting region 7 1 0 will maintain the original phase state, and the 180-degree phase-changing light-transmitting region 7 丨 2 light will have the original phase state f 1 8 0 degrees The phase shift thereby generates a relative ratio at the boundary between the light-transmitting region 7 1 0 and the light-transmitting region 7 1 2. The destructive interference between light having a difference between 0 ° and 180 ° is used to form an image on the photoresist layer. For example, when the two phase masks and the crystals are exposed at the best time of 70, the perpendicularity of the vertical light of the exposure image is 1 0 05 〇 Erming's position during the first exposure and the second exposure. At the exact same position, the position of each light and the second mask 各 无 has not changed, that is, in the relative position of the second mask and the crystal > circle and the first exposure example is performed. The relative positions are the same. The first light beam obtained in accordance with the present invention: at the time of sub-exposure 'is used in a phase shift mask layout 100 including an unexposed / light pattern 100 as shown. The vertical thin line pattern 1001 of the first photoresistive thin line pattern 1001, the unexposed area 1 0 02 connected to the unexposed straight thin line pattern 1004, the unexposed unexposed area b, and the unexposed t Straight thin line pattern 1004 The unexposed thin line i3 on the through edge and the unexposed thin line pattern 1 1 on the periphery are formed in the light-transmitting area 71 0 and the transparent

Page 16 578208 V. Description of the invention (ίο) The light boundary 7 1 2 is connected to the vertical thin line pattern 1 001 and the vertical thin line pattern 1 0 04 at the father boundary, which will be used in the second exposure step. The displacement mask 80 was removed. The phase shift mask layout 80 includes an opaque horizontal control chrome line pattern 802, which is mainly used to control the line width of the horizontal thin line pattern 丨 〇2, an opaque vertical trimming ^ case 801, which is related to the horizontal control The chromium line pattern 802 is orthogonally connected to shield the unexposed photoresistive region of the vertical thin line pattern 1001 that has been formed in the photoresist layer in the previous exposure step. Phase shift mask layout 8 〇 It also contains an opaque horizontal control chrome line pattern 803, which is mainly used to control the line width of the horizontal thin line pattern 1103, and an opaque vertical trim pattern 804, which is in line with the horizontal control chrome line pattern. 80 3 is orthogonally connected to shield the unexposed photoresist region of the vertical thin line pattern 1004 which has been formed in the photoresist layer in the previous exposure step. The phase shift mask layout 80 also includes a 0 degree phase change transmission area 810, a 180 degree phase change transmission area 81 2 and a 0 degree phase change transmission area 8 1 4. The light passing through the 0 degree phase changing light transmission area 8 1 0 will maintain the original phase state, and the 180 degree phase changing light transmission area 8 1 2 light will have a difference of 180 degrees from the original phase state. Phase shift, thereby generating a relative ratio at the boundary between the light-transmitting area 8 1 0 and the light-transmitting area 8 1 2 (or the light-transmitting area 81 2 and the light-transmitting area 814). 'Using light with a difference between 0 degrees and 180 degrees The destructive interference between the two layers is imaged on the photoresist layer to form an unexposed horizontal thin line pattern 101 and an unexposed horizontal thin line pattern 1 103. Compared with the conventional technique, a phase shift mask and a single phase (non-phase

578208 V. Description of the invention (11) Displacement) Trimming process of trimming photomask and double exposure technology. The present invention uses two phase shift photomasks and double exposure technology to form the desired two phases on the photoresist layer. It is close to the tiny thin line pattern 110, and the design of the phase shift mask layout does not have a conflict problem. In addition, it also solves the problem of the need to make another 45-degree angle trimming mask for the conventional technique. Furthermore, the two exposures of the present invention are matched with two pieces of phase shift masks. When each mask is exposed to the same crystal cube, it is positioned at the same position without relative displacement with the wafer. Simpler. All the above advantages show that the present invention has fully complied with the statutory requirements of industrial availability, novelty, and progress as stipulated by the Patent Law. The application was filed in accordance with the Patent Law. Please check and approve the patent in this case. The above description is only a preferred embodiment of the present invention, and any equivalent changes and modifications made in accordance with the scope of the patent application of the present invention shall fall within the scope of the patent of the present invention.

Page 578208 Simple explanation of the diagram Simple diagram of the diagram Figure 1 shows the method proposed by NT I, in order to expose a pattern of two similar tiny components on a photoresist layer, the phase shift mask layout and Trimming the photomask layout. Figure 2 shows another method proposed by NTI in 2002:-conventional method. To expose a tiny element pattern on a photoresist layer, the phase shift photomask layout and trimming are required. Photomask layout. Figure — Shows the present invention one by one_ A preferred embodiment. Schematic symbol description 10 Similar micro-element patterns 20 Phase-shift mask layout 30 Trimming mask layout 40 Micro-element patterns 50 Phase-shift mask layout 60 Trimming mask layout 70 phase shift mask layout 80 phase shift mask layout 101 vertical thin line pattern 102 horizontal thin line pattern 103 horizontal thin line pattern 104 vertical thin line pattern 201 control chrome line 202 control chrome line 203 control chrome line 204 control chrome line 206 opaque area 210 0 degree light transmission area 2 1 0 212 1 8 0 degree phase shift light transmission area 214 0 degree light transmission area 401 vertical thin line pattern 402 horizontal thin line pattern

Page 19 578208

Simple illustration on page 20 501 Control chrome wire 502 Control network 5 5 5a 0 degree transparent area 5 0 5b 0 degree transparent area 5 0 6a 1 8 0 degree transparent area 5 0 6b 1 8 0 degree transparent Area 509 opaque area 550 corner 650 45 degree angle corner 701 opaque vertical control chrome line pattern 702 opaque horizontal control chrome line pattern 703 opaque horizontal control chrome line pattern 704 opaque vertical control chrome line Pattern 710 0 degree phase change light transmission area 712 1 8 0 degree phase change light transmission area 801 Opaque vertical trim pattern 802 Opaque horizontal control chrome line pattern 803 Opaque horizontal control chrome line pattern 804 Opaque vertical trim Pattern 810 0-degree phase change transmission area 812 1 8 0-degree phase change transmission area 814 0-degree phase change transmission area 1001 Unexposed vertical thin line pattern 1002 Unexposed area 1003 Unexposed area 1004 Unexposed vertical thin line pattern 1005 Peripheral unexposed thin line pattern 1101 Vertical thin line pattern 1102 Horizontal thin line pattern 1103 Horizontal thin line pattern 1104 Vertical thin line pattern

Claims (1)

578208 1. A micro-line pattern is provided, the light provides displacement, light transmission, light transmission, and transparency. The cover is laid out, and the phase shift is horizontal, and the surrounding area is not exposed. The vertical fine opaque cover layout is used, and the phase shift is transparently connected to the optical lithographic thin line pattern and a horizontal lithographic square-to-one-phase area, the _ area, and the first area. The light penetrates the light area, and the light fine line of the exposure area is a second phase area, the _ area, and the orthogonal phase line pattern of the first area; a second exposure of the light through the light area, the vertical thin method, and the The micro-line pattern method includes a displacement photomask adjacent to the first vertical control two-phase displacement and connected to the vertical light process, and the first photoresistor orthogonally connected to the photoresistor; the displacement photomask is adjacent to the first horizontally controlled four-phase displacement contact. In the water and light process, pass the third to the photoresist line pattern. A small thin line drawing is orthogonally connected to the following step layout. One phase shift chromium line pattern light-transmitting area directly controls chromium so that the photo-photographic shift transparent layer is formed in the vertical layout. The three-phase shift chromium line pattern light-transmitting area is formed. Plane-controlled chromium causes the light to form a circle of light on the translucent layer. The light includes a vertical line that includes a light-transmitting area at the junction of the first line pattern. The first light area is projected on the vertical thin line pattern. Contains a light-transmitting region disposed at the first boundary, a line pattern, and radiating the second light region to form a vertical thin line on the horizontal fine resistance layer. A first phase, a second phase, a phase displacement, and a water phase displacement. Light and the second line pattern, and the fourth and second phases of the one-third phase and the two-phase displacement and a vertical line to shield the phase-shifted light and the fourth line pattern are positive 578208 6. Application for patent scope 2. Such as application for patent scope The method according to item 1, wherein the peripheral unexposed thin line pattern is correspondingly formed in the first phase-shifted transparent region and the second phase-shifted transparent region Sector. 3. The method according to item 1 of the scope of patent application, wherein the peripheral unexposed thin line pattern is removed in the second exposure process. 4. The method according to item 1 of the scope of patent application, wherein the horizontal thin line pattern falls within the horizontal unexposed area. 5. The method according to item 1 of the scope of patent application, wherein the second phase shift mask layout is positioned at the same relative position of the first phase shift mask layout as the wafer. 6. The method according to item 1 of the scope of patent application, wherein the phase difference between the first phase-shifted transparent region and the second phase-shifted transparent region is 180 degrees. 7. The method according to item 6 of the scope of patent application, wherein the first phase-shifted transmission region is a 0-degree phase-shift region, and the second phase-shifted transmission region is a 180-degree phase-shift region. 8. The method according to item 1 of the scope of patent application, wherein the difference between the third phase-shifted transmission region and the fourth phase-shifted transmission region is 180 degrees. Page 22 578208 VI. Patent application scope 9. A method for manufacturing a semiconductor element, comprising the following steps: providing a semiconductor wafer with a photoresist layer on it; providing a first phase shift mask provided on the semiconductor At a predetermined position above the wafer, the first phase shift mask includes at least a first phase shift transmission region, a second phase shift transmission region adjacent to the first phase shift transmission region, and a first opaque region. Light area; performing a first exposure process to irradiate light to the first phase shift mask, the light passing through the first phase shift light transmitting region and the second phase shift light transmitting region to form on the photoresist layer A first thin line pattern, an unexposed area are orthogonally connected to the first thin line pattern, and a peripheral unexposed thin line pattern; a second phase shift mask is provided at the predetermined position, and the second phase shift light The cover includes a third phase-shifted transparent region, a fourth phase-shifted transparent region adjacent to the third phase-shifted transparent region, and a second opaque region to shield the first thin line pattern; And performing a second exposure process to make the light irradiate the second phase shift mask, the light passes through the third phase shift transmission area and the fourth phase shift transmission area to form a second on the photoresist layer The thin line pattern is orthogonally connected to the first thin line pattern. 10. The manufacturing method as described in item 9 of the scope of patent application, wherein there are a plurality of lenses between the semiconductor wafer and the first phase shift mask. Page 23 578208 VI. Patent application scope 11. The manufacturing method as described in item 9 of the patent application scope, wherein the peripheral unexposed thin line pattern is correspondingly formed in the first phase shift light transmission area and the second phase shift The junction of light-transmitting areas. 1 2. The manufacturing method according to item 9 of the scope of patent application, wherein the peripheral unexposed thin line pattern is removed in the second exposure process. 1 3. The manufacturing method according to item 9 of the scope of patent application, wherein the second thin line pattern falls within the unexposed area. 1 4. The manufacturing method according to item 9 of the scope of patent application, wherein the difference between the first phase-shifted light-transmitting region and the second phase-shifted light-transmitting region is 180 degrees. 1 5. The manufacturing method as described in item 9 of the scope of patent application, wherein the difference between the third phase-shifted light-transmitting region and the fourth phase-shifted light-transmitting region is 180 degrees 0 Page 24