^106 A7^ 106 A7
本發明係關於一種攜帶型之記憶卡，特別是關於一種通 用串列匯流排之記憶卡。 背景 由於快閃記憶體具有非揮發性、消耗功率少、輕薄短小 易於攜帶且可以電氣方式改窝的優點，因此近年來快閃記 憶體受到使用者廣泛地使用。快閃記憶體的用途之一為作 為决閃$己丨思卡之儲存媒體。如圖1所示，一習知使用於通 用串列匯流排（Universal Series Bus，USB)之快閃記憶卡Γ 0包 含至少一快閃記憶體1 2、一用以控制該快閃記憶體丨2讀/ 寫資料USB控制器14及一 USB連接器16，且藉由一 USB ;丨面3 〇連接至一主控元件（host device) 2 0。該主控元件2 〇 亦包含一相對應的U S B控制器2 4及一 U S B連接器2 2。該 快閃記憶卡1 0經由控制線丨8控制該快閃記憶體1 2之資料 讀/窝時序及電力供應，且經由位址/資料線丨9讀/窝該 快閃記憶體1 2。 習知之快閃記憶卡絕大部分係採用N AND型快閃記憶體 做為儲存媒體，但是由於N AND型快閃記憶體之價格一直 處於高價格狀態，使得快閃記憶卡的成本難以調降。此 外，目前NAND型快閃記憶體的存取時間（access time)約為 5 〇 n s (約 2 0 M b p s )，編程時間（program time)約為 2 0 0 u s 至 50〇us，雖足夠使用於uSBl.l 之 1.5MBps( Byte Per Second)的傳輸速率，然而對於USB2.0之60MBps傳輸速 度而1卻明顯在功效上顯示不足之處。 H:\Hu\Hygj臺科技\8〇938\8〇938.doc - 5 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 578106 A7 B7 五、發明説明（2The present invention relates to a portable memory card, and more particularly to a universal serial bus memory card. Background Since flash memory has the advantages of non-volatile, low power consumption, light weight, short size, ease of portability, and electrical modification, flash memory has been widely used by users in recent years. One use of flash memory is as a storage medium for flash memory. As shown in FIG. 1, a conventional flash memory card used in a universal serial bus (Universal Series Bus, USB) Γ 0 includes at least one flash memory 1 2, one for controlling the flash memory 丨2 read / write data USB controller 14 and a USB connector 16 and are connected to a host device 20 through a USB interface; The main control element 20 also includes a corresponding USB controller 24 and a USB connector 22. The flash memory card 10 controls the data read / write timing and power supply of the flash memory 12 via the control line 丨 8, and reads / writes the flash memory 12 via the address / data line 丨 9. Most of the conventional flash memory cards use N AND type flash memory as the storage medium, but because the price of N AND type flash memory is always at a high price, it is difficult to reduce the cost of flash memory cards. . In addition, the current access time of NAND-type flash memory is about 50ns (about 20 M bps), and the programming time is about 200 us to 50us, although it is sufficient to use The transfer rate of 1.5MBps (Byte Per Second) in uSBl.l, but 1 for USB2.0's 60MBps transfer speed, but it obviously shows insufficient performance. H: \ Hu \ Hygj 台 科技 \ 8〇938 \ 8〇938.doc-5-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 578106 A7 B7 V. Description of the invention (2
由於傳統的NAND型快閃記憶體並無法適用於高速之 U S B 2 · 0規格，因此並無法滿足市場上對於可攜式電子產 品之高速規格需求。 發明之簡專說明 本發明之主要目的係為解決習知技藝之問題而提供一種 攜帶型之記憶卡，以降低成本及提升記憶卡之存取速度。 為達成上述目的，本發明揭示一種攜帶型之記憶卡，使 用在一支持U S B規格之主控元件中。該記憶卡包含至少一 用以謂/寫資料之隨機存取記憶體、一電連接於該隨機存 取圮憶體之資料轉換器、一藉由控制該資料轉換器進行該 隨機存取記憶體讀/寫資料之微控制器、及電連接於該主 控元件及該資料轉換器間之U S b連接器。此外，本發明之 記憶卡亦可包含一提供隨機存取記憶體進行自我資料更新 (self-refresh)所需電力之電池、及一控制電池充/放電之電 源控制器。該資料轉換器係將支援U S b之資料格式轉換成 隨機存取記憶體之資料格式，及/或將隨機存取記憶體之 資料格式轉換成支援USB之資料格式。該隨機存取記憶體 可為雙重傳輸率動態隨機存取記憶體（DDR SDRAM)或同步 動態隨機存取記憶體（SDRAM)。 相較於習知技藝，本發明之記憶卡由於採用隨機存取憶 體做為資料讀/寫之儲存媒體，因此具有下列優點： 1 ·由於隨機存取記憶體之資料存取速度遠高於習知技藝 之NAND型快閃記憶體，因此本發明之記憶卡存取速 度將大幅提昇’超越目前使用之USB2.0規格，且可 H.\Hu\Hyg\麗臺科技\8〇938\80938.献 .g . 紙張尺度適财®國賴準(CNS)鐵格(21()χ297公董）-*----Because traditional NAND flash memory is not suitable for high-speed USB 2 · 0 specifications, it cannot meet the high-speed specifications of portable electronic products on the market. Brief description of the invention The main purpose of the present invention is to provide a portable memory card to solve the problems of conventional techniques, so as to reduce the cost and increase the access speed of the memory card. In order to achieve the above object, the present invention discloses a portable memory card for use in a main control element supporting the USB specification. The memory card includes at least one random access memory for predicating / writing data, a data converter electrically connected to the random access memory, and a random access memory by controlling the data converter. A microcontroller for reading / writing data, and a US b connector electrically connected between the main control element and the data converter. In addition, the memory card of the present invention may also include a battery that provides random access memory with power required for self-refresh, and a power controller that controls the charging / discharging of the battery. The data converter converts a data format supporting USB to a data format of random access memory, and / or a data format of random access memory to a data format supporting USB. The random access memory can be a dual-rate dynamic random access memory (DDR SDRAM) or a synchronous dynamic random access memory (SDRAM). Compared with the conventional technique, the memory card of the present invention has the following advantages because the random access memory is used as a storage medium for data reading / writing, and the data access speed of the random access memory is much higher than The NAND-type flash memory of the known technology, so the access speed of the memory card of the present invention will be greatly improved. 80938.G.g. Paper Standards ® Choi Lai-Jun (CNS) Tiege (21 () χ297 Public Director)-* ----
裝 訂Binding
578106 A7 _______B7 五、發明説明（3 ) 適用在未來更高速之IEEE 1 3 94規格。 2 .由於P过機存取憶體之晶粒成本遠小於N a n d型快閃記 憶體，且市場上已有數量眾多之隨機存取憶體製造 商，因此可以較低價格取得製造記憶卡所泰 a 1而《隨機存 取憶體，且供貨來源亦較為穩定。 遷式之簡單諸明 本發明將依照後附圖式來說明，其中： 圖1係習知快閃記憶卡之功能方塊圖； 圖2係本發明記憶卡之第一實施例之功能方塊圖；及 圖3係本發明記憶卡之第二實施例之功能方塊圖。 元件符號說明 10 習知快閃記憶卡 12 快閃記憶體 14 U S B控制器 16 U S B連接器 18 控制線 19 位址/資料線 20 主控元件 22 U S B連接器 24 u S B控制器 30 記憶卡 32 動態隨機存取記憶體 34 資料轉換器 36 u S B連接器 3 8 微控制器 40 唯讀記憶體 42 電源控制器 44 電池 46 開關 50 主控元件 52 U S B控制器 54 U S B控制器 60 記憶卡 H:\Hu\Hyg\ 麗臺科技\8093 8\8093 8.doc -7-578106 A7 _______B7 V. Description of the invention (3) The IEEE 1 3 94 specification applicable to higher speeds in the future. 2. Since the die cost of P memory access memory is much smaller than that of N and flash memory, and there are already a large number of random access memory manufacturers on the market, it is possible to obtain memory cards for lower prices. Thai a 1 and "random access memory, and the supply source is also relatively stable. The simplicity of the transfer method The present invention will be described in accordance with the following drawings, wherein: FIG. 1 is a functional block diagram of a conventional flash memory card; FIG. 2 is a functional block diagram of a first embodiment of the memory card of the present invention; And FIG. 3 is a functional block diagram of the second embodiment of the memory card of the present invention. Component symbol description 10 Known flash memory card 12 Flash memory 14 USB controller 16 USB connector 18 Control line 19 Address / data line 20 Main control component 22 USB connector 24 u SB controller 30 Memory card 32 Dynamic RAM 34 data converter 36 u SB connector 3 8 microcontroller 40 read-only memory 42 power controller 44 battery 46 switch 50 main control element 52 USB controller 54 USB controller 60 memory card H: \ Hu \ Hyg \ Leadtek \ 8093 8 \ 8093 8.doc -7-
B7 B7 4 五、發明説明（ 6 4 資料轉換器 6 8 快閃記憶體控制器 72電源控制器 7 6開關 8 2 U S B控制器 62動態隨機存取記憶體 66 USB連接器 7 〇 控制單元 7 4 電池 8 0 主控元件 84 U S B控制器 故佳實施例說明 本發明將在此參考圖式更加詳細地說明，並敘述本發明 之較佳實施例。圖2係本發明記憶卡之第一實施例之功能 万塊圖。力圖2所示，一載有隨機存取記憶體3 2做為儲存 媒體义記憶卡30，可搭配在支援USB之主控元件5〇之使 用。該記憶卡3 0包含用以儲存資料之隨機存取記憶體3 2、 電連接於該隨機存取記憶體32之資料轉換器34、藉由控制 '貝料轉換器3 4以該讀/寫隨機存取記憶體3 2之微控制器 38、及電連接於主控元件5〇及資料轉換器34間之usb連 接器3 6。此外’本發明之記憶卡3 〇亦可包含提供隨機存取 冗憶體3 2進行自我資料更新所需電力之電池4 6、及控制電 池4 4充/放電之電源控制器4 2。 資料轉換器3 4係用以將支援U S B之資料格式轉換成隨機 存取記憶體之資料格式，及/或將隨機存取記憶體之資料 格式轉換成支援U S B之資料格式。上述之隨機存取記憶體 3 2可為雙重傳輸率動態隨機存取記憶體（DDR SDRAM)或同 步動態隨機存取記憶體（SDRAM)。該主控元件50包含USB 連接器52及USB控制器54。USB連接器52可與記憶卡3〇 H:\Hu\Hyg\麗臺科技\80938\80938.(1〇〇 - 8 _ 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 5 五、發明説明（ 之連接态36電連接，並分別由USB控制器54及微控 制器38將資科由隨機存取記憶體32讀出並傳送至主护元件 心或將資料由主控元件50傳送至記憶卡3g並窝入隨機 存取記憶體3 2中。 同步動』P退機存取記憶體之輸出輸入的訊號及時脈訊號 係由微控制器38產生，且由於記憶體晶片上的時脈和中央 處理器的時脈同步，所以在執行指令和傳送資訊時，同步 化的同步動態隨機存取記憶體可以節省許多時間，增加系 統的整體效能。 由於隨機存取記憶體32係採用電容儲存資料，而電容需 不斷充私X保持 > 料的正確，因此本發明利用電源控制器 4 2以&制開關4 6《切換，使t池4 4放電給隨機存取記憶 體3 2以利進行自我資料更新（self-refresh)。當記憶卡3 〇與 王& 7L件5 0 (具有電源供應）電連接後，電源控制器4 2隨 即切換開關46，使電池44自主控元件5〇進行充電。當記 憶卡3 0與主控元件5 〇分開後，電源控制器42傳遞一自我 資料更新訊號給隨機存取記憶體32，並切換開關“使電池 44進入放電模式。該隨機存取記憶體32具有獨立且内建的 育料更新電路，藉由電池44之供電而於一定時間内對其内 部電容做自我充電，以確保儲存資料之正確。該微控制器 38另包含一唯讀記憶體4〇，用以儲存其韌體。 圖3係本發明記憶卡之第二實施例之功能方塊圖。如圖3 所示，本發明之載有隨機存取記憶體62以做為儲存媒體之 記憶卡60，可搭配支援USB之主控元件8〇之使用。記憶 H:\Hu\Hyg\ 麗臺科技\80938\80938.<1〇<: -9- 578106 A7 ____B7 五、發明説明（6 ) 卡6 0包含用以儲存資料之隨機存取記憶體6 2、控制資料讀 窝之控制單元7 0及用以連接控制單元7 〇及主控元件§ 〇之 U S B連接器6 6。該記憶卡6 0亦包含一電池7 4，以提供隨 機存取記憶體6 2在進行自我資料更新時所需之電力。該控 制單元7 0包含連接於隨機存取記憶體6 2之資料轉換器 6 4、連接於資料轉換器6 4之快閃記憶體控制器6 8及控制 該電池7 4充/放電之電源控制器7 2。 主控元件80包含USB連接器82及USB控制器84。USB 連接器8 2係電連接於記憶卡6 〇之u S B連接器6 6，並分別 由ϋ S B控制器8 4及記憶卡6 0之控制單元7 0將資料由隨機 存取記憶體6 2讀出並傳送至主控元件7 〇，或將資料由主控 元件7 0傳送至記憶卡6 〇並寫入隨機存取記憶體6 2中。資 料轉換器ό 4係用以將支持ϋ S Β之資料格式轉換成隨機存取 冗憶體之資料格式，及/或將隨機存取記憶體之資料格式 轉換成支援U S B之資料格式。此外，同步動態隨機存取記 憶體所需之時脈訊號係由資料轉換器6 4產生（亦可用外部 電路產生）。電源控制器7 2係藉由控制開關7 6之切換，使 電池7 4放電給隨機存取記憶體6 2以利進行自我資料更新。 相較於習知技藝，本發明之記憶卡由於採用隨機存取憶 體做為資料讀/寫之儲存媒體，因此具有下列優點： 1 ·由於隨機存取記憶體之資料存取速度遠高於習知技藝 之N AND型快閃記憶體，因此本發明之記憶卡存取速 度將大幅提昇，超越目前使用之USB2.0規格，且可 適用在未來更高速之IEEE1394規格。 H:\Hu\Hyg\ 麗臺科技\80938\8〇938(1〇(： _1〇 本紙張Xi通用中國國祕半(CNS) Μ規格㈣χ撕公董)--- 578106B7 B7 4 V. Description of the invention (6 4 Data converter 6 8 Flash memory controller 72 Power controller 7 6 Switch 8 2 USB controller 62 Dynamic random access memory 66 USB connector 7 〇 Control unit 7 4 Battery 8 0 Main control element 84 USB controller The description of a preferred embodiment of the present invention The present invention will be described in more detail with reference to the drawings, and a preferred embodiment of the present invention will be described. FIG. 2 is a first embodiment of the memory card of the present invention The function is shown in the figure. As shown in Fig. 2, a random access memory 32 is included as a storage medium 30, which can be used with a USB-enabled main control component 50. The memory card 30 contains Random access memory 3 for storing data 2. Data converter 34 electrically connected to the random access memory 32, by controlling the 'shell material converter 3 4' to read / write the random access memory 3 Microcontroller 38 of 2 and a USB connector 3 6 electrically connected between the main control element 50 and the data converter 34. In addition, the memory card 3 of the present invention may also include a random access memory 3 2 Batteries for power required for self-data update 4 6 and control batteries 4 4 Charge / discharge power controller 4 2. Data converter 3 4 is used to convert the data format supporting USB to the data format of random access memory, and / or the data format of random access memory to Supports USB data format. The above-mentioned random access memory 32 can be a dual transfer rate dynamic random access memory (DDR SDRAM) or synchronous dynamic random access memory (SDRAM). The main control element 50 includes a USB connection Device 52 and USB controller 54. The USB connector 52 can be used with the memory card 30H: \ Hu \ Hyg \ Litai Technology \ 80938 \ 80938. (100- 8 _ This paper standard applies to China National Standard (CNS) A4 specification (210X 297 mm) 5 5. Description of the invention (The connection state 36 is electrically connected, and the USB controller 54 and the microcontroller 38 respectively read the asset from the random access memory 32 and transfer it to the main protection The component core or the data is transferred from the main control component 50 to the memory card 3g and embedded in the random access memory 32. Synchronous motion "P offline access to the memory input and output signals and pulse signals are from the microcontroller 38, and due to the clock on the memory chip and the clock of the CPU Synchronization, so when executing commands and transmitting information, the synchronized synchronous dynamic random access memory can save a lot of time and increase the overall performance of the system. Since the random access memory 32 uses capacitors to store data, the capacitors need to be continuously charged. The private X keeps the correct information, so the present invention uses the power controller 4 2 to switch & make the switch 4 6 "to switch the t pool 4 4 to the random access memory 3 2 to facilitate self-data update (self -refresh). When the memory card 3 0 is electrically connected to the Wang 7L piece 50 (with power supply), the power controller 42 switches the switch 46 and causes the battery 44 to charge the autonomous control element 50. When the memory card 30 is separated from the main control element 50, the power controller 42 transmits a self-data update signal to the random access memory 32, and switches "to put the battery 44 into a discharge mode. The random access memory 32 It has an independent and built-in breeding material update circuit, which uses the power of the battery 44 to self-charge its internal capacitance within a certain period of time to ensure that the stored data is correct. The microcontroller 38 also includes a read-only memory 4 〇, used to store its firmware. Figure 3 is a functional block diagram of the second embodiment of the memory card of the present invention. As shown in Figure 3, the present invention contains a random access memory 62 as the memory of the storage medium The card 60 can be used with the USB-enabled main control component 80. Memory H: \ Hu \ Hyg \ Leadtek \ 80938 \ 80938. ≪ 1〇 <: -9- 578106 A7 ____B7 5. Description of the invention ( 6) The card 60 includes a random access memory 6 for storing data 2. A control unit 70 for controlling data reading and a USB connector 6 6 for connecting the control unit 7 〇 and the main control element § 〇. The Memory card 6 0 also contains a battery 7 4 to provide random access memory 6 2 Power required for self data update. The control unit 70 includes a data converter 6 connected to the random access memory 6 2 and a flash memory controller 6 8 connected to the data converter 6 4 And a power controller 72 that controls the charging / discharging of the battery 74. The main control element 80 includes a USB connector 82 and a USB controller 84. The USB connector 8 2 is electrically connected to the memory card 6 and the SB connector 6 6. The data is read from the random access memory 62 and transferred to the main control element 7 by the SB controller 84 and the control unit 70 of the memory card 60, respectively, or the data is controlled by the main control element 7. 0 is transferred to the memory card 6 and written into the random access memory 62. The data converter ό 4 is used to convert the data format supporting ϋ S Β into the data format of the random access memory, and / or Converts the data format of the random access memory to a data format that supports USB. In addition, the clock signals required for synchronous dynamic random access memory are generated by the data converter 64 (also can be generated by external circuits). Power control The device 7 2 discharges the battery 7 4 by controlling the switch 7 6. The random access memory 62 facilitates self-data updating. Compared with the conventional art, the memory card of the present invention has the following advantages because the random access memory is used as a storage medium for data reading / writing, and thus has the following advantages: 1 · Since the data access speed of the random access memory is much higher than the N AND flash memory of the conventional technology, the memory card access speed of the present invention will be greatly improved, surpassing the current USB2.0 specification, and can Applies to the higher speed IEEE1394 standard in the future. H: \ Hu \ Hyg \ Leadtek Technology \ 80938 \ 8〇938 (1〇 (: _1〇 This paper Xi General China State Secret Half (CNS) M specifications ㈣χ Tearing public director) --- 578106
2 .由於隨機存取憶體之晶粒成本遠小於n AND型快閃記 憶體’且市場上已有數量眾多之隨機存取憶體製造 商，因此可以較低價格取得製造記憶卡所需之記憶 體，且供貨來源亦較為穩定。 本發明之技術内容及技術特點已揭示如上，然而熟悉本 項技術之人士仍可能基於本發明之教示及揭示而作種種不 背離本發明精神之替減㈣1此，本發明之保護範圍 應不限於實施例所揭示者’而應包括各種不背離本發明之 替換及修飾，並為以下之申請專利範園所涵蓋。天 H:\Hu\Hyg\ 麗臺科技\80938\80938.(1〇〇 -11 -2. Since the chip cost of the random access memory is much smaller than that of n AND flash memory and there are a large number of random access memory manufacturers on the market, the required memory card can be obtained at a lower price. Memory, and the source of supply is relatively stable. The technical content and technical features of the present invention have been disclosed as above, but those familiar with the technology may still make various substitutions without departing from the spirit of the present invention based on the teachings and disclosures of the present invention. Therefore, the scope of protection of the present invention should not be limited to Those disclosed in the examples should include various substitutions and modifications that do not depart from the present invention, and are covered by the following patent application parks. Day H: \ Hu \ Hyg \ Leadtek \ 80938 \ 80938. (1〇〇 -11-