200410148 A7 B7 五、發明説明（1 ) 登J月領域 本發明係關於一種攜帶型之記憶卡，特別是關於一種通 用串列匯流排之記憶卡。 t明背景 由於快閃記憶體具有非揮發性、消耗功率少、輕薄短小 易於攜帶且可以電氣方式改寫的優點，因此近年來快閃記 憶體雙到使用者廣泛地使用。快閃記憶體的用途之一為作 為快閃記憶卡之儲存媒體。如圖丨所示，一習知使用於通 用串列匯流排（Universal Series Bus，USB)之快閃記憶卡1、〇包 含至少一快閃記憶體1 2、一用以控制該快閃記憶體1 2讀/ 寫資料USB控制器14及一 USB連接器16，且藉由一 USB 介面30連接至一主控元件（h〇st device) 2 〇。該主控元件2 〇 亦包含一相對應的U S B控制器2 4及一 U S B連接器2 2。該 快問記憶卡1 0經由控制線丨8控制該快閃記憶體丨2之資料 讀/寫時序及電力供應，且經由位址/資料線丨9讀/寫該 快閃記憶體1 2。 習知之快閃記憶卡絕大部分係採用N AND型快閃記憶體 做為儲存媒體，但是由於N A N D型快閃記憶體之價格一直 處於南價格狀態，使得快閃記憶卡的成本難以調降。此 外目削N A N D型快閃記憶體的存取時間（access time)约為 5 0 n s (約 2 0 M b p s )，編程時間（pr〇gram time)約為 2 〇 〇 u s 至 5 00us ’ 雖足夠使用於USB1」il 5MBps(Byte per Second)的傳输速率，然而對於USB2.0之60MBps傳輸速 度而言卻明顯在功效上顯示不足之處。 Γ ·' H:\Hu\Hyg\麗臺科技\8〇938\80938.(1(^ . 5 " ____ 本紙張尺度咖中國國家標準(CNS) A4規格(210X297公爱) —一 1—：-- 200410148 A7 B7 五、發明説明（2 ) 由於傳統的NAND型快閃記憶體並無法適用於高速之 U S B 2 · 0規格，因此並無法滿足市場上對於可攜式電子產 品之高速規格需求。 曼明之簡要說明 本發明之主要目的係為解決習知技藝之問題而提供一種 攜帶型之記憶卡，以降低成本及提升記憶卡之存取速度。 為達成上述目的，本發明揭示一種攜帶型之記憶卡，使 用在一支持U S B規格之主控元件中。該記憶卡包含至少一 用以讀/寫資料之隨機存取記憶體、一電連接於該隨機存 取記憶體之資料轉換器、一藉由控制該資料轉換器進行該 隨機存取記憶體讀/寫資料之微控制器 '及電連接於該主 控元件及該資料轉換器間之U S B連接器。此外，本發明之 ?己憶卡亦可包含一提供隨機存取記憶體進行自我資料更新 (self-refresh)所需電力之電池、及一控制電池充/放電之電 源控制器。該資料轉換器係將支援U S b之資料格式轉換成 隨機存取記憶體之資料格式，及/或將隨機存取記憶體之 資料袼式轉換成支援USB之資料格式。該隨機存取記憶體 可為雙重傳輸率動態隨機存取記憶體（DDR SDRAM)或同步 動態隨機存取記憶體（SDRAM)。 相較於習知技藝，本發明之記憶卡由於採用隨機存取憶 體做為資料讀/寫之儲存媒體，因此具有下列優點： 1 ·由於隨機存取記憶體之資料存取速度遠高於習知技藝 之N AND型怏閃記憶體，因此本發明之記憶卡存取速 度將大幅提昇，超越目前使用之USB2.0規格，且可200410148 A7 B7 V. Description of the invention (1) The field of landing on the moon This invention relates to a portable memory card, and more particularly to a universal serial bus memory card. Bright background Because flash memory has the advantages of non-volatile, low power consumption, light weight, short size, easy to carry, and can be rewritten electrically, flash memory has been widely used by users in recent years. One use of flash memory is as a storage medium for flash memory cards. As shown in Figure 丨, a conventional flash memory card used in a universal serial bus (Universal Series Bus, USB) 1. It includes at least one flash memory 1 2. One is used to control the flash memory 1 2 Read / write data USB controller 14 and a USB connector 16 and are connected to a host device 2 through a USB interface 30. The main control element 20 also includes a corresponding USB controller 24 and a USB connector 22. The quick memory card 10 controls the data read / write timing and power supply of the flash memory 丨 2 via a control line 丨 8 and reads / writes the flash memory 12 via an address / data line 丨 9. Most of the conventional flash memory cards use N AND type flash memory as the storage medium, but because the price of N A N D type flash memory has always been at a low price, it is difficult to reduce the cost of flash memory cards. In addition, the access time of the NAND flash memory is about 50 ns (about 20 M bps), and the programming time (pr0gram time) is about 2000us to 500us. Used for USB1 "il 5MBps (Byte per Second) transmission rate, but for USB2.0 60MBps transmission speed, it clearly shows insufficient performance. Γ '' H: \ Hu \ Hyg \ Litai Technology \ 8〇938 \ 80938. (1 (^. 5 " ____ This paper size is China National Standard (CNS) A4 specification (210X297 public love) — one 1 — : --- 200410148 A7 B7 V. Description of the Invention (2) Because the traditional NAND flash memory is not applicable to the high-speed USB 2 · 0 specification, it cannot meet the high-speed specifications of portable electronic products on the market. . Man Ming's brief description The main purpose of the present invention is to provide a portable memory card in order to solve the problems of conventional technology, in order to reduce the cost and increase the access speed of the memory card. In order to achieve the above purpose, the present invention discloses a portable type The memory card is used in a main control component supporting the USB specification. The memory card includes at least one random access memory for reading / writing data, a data converter electrically connected to the random access memory, A microcontroller for reading / writing data in the random access memory by controlling the data converter and a USB connector electrically connected between the main control component and the data converter. In addition, the invention The memory card can also contain a A battery that provides random access memory with power required for self-refresh, and a power controller that controls battery charge / discharge. The data converter converts the data format that supports US b into random access The data format of the memory, and / or the method of converting the data of the random access memory to a data format supporting USB. The random access memory can be a dual transfer rate dynamic random access memory (DDR SDRAM) or synchronous Dynamic random access memory (SDRAM). Compared with the conventional art, the memory card of the present invention has the following advantages because it uses random access memory as a storage medium for data reading / writing, and has the following advantages: 1) Because of random access The data access speed of the memory is much higher than the N AND flash memory of the conventional technology, so the memory card access speed of the present invention will be greatly improved, surpassing the current USB2.0 specification, and can
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適用在未來更高速之IEEE1394規格。 2 ·由於隨機存取憶體之晶粒成本遠小於n aNd型快閃記 憶體，且市場上已有數量眾多之隨機存取憶體製造 商，因此可以較低價格取得製造記憶卡所需之隨機存 取憶體，且供貨來源亦較為穩定。 凰式之簡單說明 本發明將依照後附圖式來說明，其中·· 圖1係習知快閃記憶卡之功能方塊圖； 圖2係本發明記憶卡之第一實施例之功能方塊圖；及、 圖3係本發明記憶卡之第二實施例之功能方塊圖。 元件符號說明 10 習知快閃記憶卡 12 快閃記憶體 14 U S B控制器 16 U S B連接器 18 控制線 19 位址/資料線 20 主控元件 22 U S B連接器 24 U S B控制器 30 記憶卡 32 動態隨機存取記憶體 34 資料轉換器 3 6 u S B連接器 3 8 微控制器 40 唯讀記憶體 42 電源控制器 44 電池 46 開關 50 主控元件 52 U S B控制器 54 U S B控制器 60 記憶卡 H:\Hu\Hyg\ 麗臺科技\80938\80938.£1〇〇 -7- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 200410148 A7 -—________Β7_ 五、發明説明（4 ) 62動態隨機存取記憶體 66 USB連接器 7 〇 控制單元 7 4 電池 8 〇 主控元件 84 U S B控制器 64 資料轉換器 68 快閃記憶體控制器 7 2 電源控制器 7 6 開關 8 2 U S B控制器 較佳實施例說明 本發明將在此參考圖式更加詳細地說明，並敘述本發明 之較佳實施例。圖2係本發明記憶卡之第一實施例之功能 方塊圖。如圖2所示，一载有隨機存取記憶體3 2做為儲存 媒體之記憶卡3 0，可搭配在支援u s B之主控元件5 0之使 用。薇記憶卡3 0包含用以儲存資料之隨機存取記憶體3 2、 電連接於該隨機存取記憶體3 2之資料轉換器3 4、藉由控制 資料轉換器3 4以該讀/寫隨機存取記憶體3 2之微控制器 3 8、及電連接於主控元件5 〇及資料轉換器3 4間之u s b連 接器3 6。此外，本發明之記憶卡3 〇亦可包含提供隨機存取 兄憶體3 2進行自我資料更新所需電力之電池4 6、及控制電 池4 4充/放電之電源控制器4 2。 資料轉換器34係用以將支援USB之資料格式轉換成隨機 存取記憶體之資料格式，及/或將隨機存取記憶體之資料 格式轉換成支援USB之資料格式。上述之隨機存取記憶體 3 2可為雙重傳輸率動態隨機存取記憶體（DDR SDRAM)或同 步動態隨機存取記憶體（SDRAM)。該主控元件50包含USB 連接器5 2及U S B控制器5 4。U S B連接器5 2可與記憶卡3 0 H:\Hu\Hyg\ 麗臺科技\80938\80938.(1〇(： 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 200410148Applies to the higher speed IEEE1394 standard in the future. 2 · Since the die cost of the random access memory is much smaller than that of n aNd-type flash memory, and there are already a large number of random access memory manufacturers on the market, it is possible to obtain the required memory card at a lower price. Random access memory, and the supply source is relatively stable. Simple description of the Phoenix style The present invention will be described in accordance with the following drawings, in which: Fig. 1 is a functional block diagram of a conventional flash memory card; Fig. 2 is a functional block diagram of a first embodiment of the memory card of the present invention; And, FIG. 3 is a functional block diagram of the second embodiment of the memory card of the present invention. Explanation of component symbols 10 Known flash memory card 12 Flash memory 14 USB controller 16 USB connector 18 Control line 19 Address / data line 20 Main control component 22 USB connector 24 USB controller 30 Memory card 32 Dynamic random Access memory 34 Data converter 3 6 u SB connector 3 8 Microcontroller 40 Read-only memory 42 Power controller 44 Battery 46 Switch 50 Master control component 52 USB controller 54 USB controller 60 Memory card H: \ Hu \ Hyg \ Litai Technology \ 80938 \ 80938. £ 1〇00-7- This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) 200410148 A7-________ Β7_ V. Description of the invention (4) 62 News RAM 66 USB connector 7 〇 Control unit 7 4 Battery 8 〇 Main control element 84 USB controller 64 Data converter 68 Flash memory controller 7 2 Power controller 7 6 Switch 8 2 DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in more detail with reference to the drawings, and the preferred embodiments of the present invention will be described. Fig. 2 is a functional block diagram of the first embodiment of the memory card of the present invention. As shown in Fig. 2, a memory card 3 0 containing a random access memory 32 as a storage medium can be used with a main control element 50 supporting u s B. Wei memory card 30 contains random access memory 3 for storing data 2. Data converter 3 electrically connected to the random access memory 3 2 4. Controls the data converter 34 to read / write The microcontroller 38 of the random access memory 32 and the usb connector 36 which is electrically connected between the main control element 50 and the data converter 34. In addition, the memory card 30 of the present invention may also include a battery 46 that provides random access to the memory 32 to update the self-data, and a power controller 42 that controls the charging / discharging of the battery 44. The data converter 34 is used for converting a data format supporting USB to a data format of a random access memory and / or converting a data format of the random access memory into a data format supporting USB. The above-mentioned random access memory 32 may be a dual transfer rate dynamic random access memory (DDR SDRAM) or a synchronous dynamic random access memory (SDRAM). The main control element 50 includes a USB connector 52 and a USB controller 54. U S B connector 5 2 can be used with memory card 3 0 H: \ Hu \ Hyg \ Leadtek \ 80938 \ 80938. (1〇 (: This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) 200410148
(U S B連接态3 6電連接，並分別由u s B控制以4及微控 制器38將資料由隨機存取記憶體32讀出並傳送至主控元件 50，或將資料由主控元件5〇傳送至記憶卡3〇並寫入随機 存取記憶體3 2中。 同步動』6^機存取$憶體之輸出輸人的訊號及時脈訊號 係由微控制器38產生’ 1由於記憶體晶片上的時脈和中央 處理器的時脈同步’所以在執行指令和傳送資訊時，同步 化的同步動態P遺機存取記憶體可以節省許多時間，增加系 統的整體效能。 、 由於隨機存取記憶體3 2係採用電容儲存資料，而電容需 不斷充屯以保持;貝料的正確，因此本發明利用電源控制器 42以控制開關46之切換，使電池44放電給隨機存取記憶 體3 2以利進行自我資料更新（self_refresh)。當記憶卡3 〇與 主控元件5 0 (具有電源供應）電連接後，電源控制器4 2隨 即切換開關46，使電池44自主控元件5〇進行充電。當記 憶卡3 0與主控元件5 〇分開後，電源控制器4 2傳遞一自我 資料更新訊號給隨機存取記憶體3 2，並切換開關4 6使電池 4 4進入放電模式。該隨機存取記憶體3 2具有獨立且内建的 資料更新電路，藉由電池4 4之供電而於一定時間内對其内 部電容做自我充電，以確保儲存資料之正確。該微控制器 3 8另包含一唯讀記憶體4 0，用以儲存其韌體。 圖3係本發明記憶卡之第二實施例之功能方塊圖。如圖3 所示，本發明之載有隨機存取記憶體6 2以做為儲存媒體之 記憶卡6 0，可搭配支援U S B之主控元件8 0之使用。記憶(The USB connection state 36 is electrically connected, and is controlled by us B and 4 and the microcontroller 38 to read data from the random access memory 32 and transfer it to the main control element 50, or to send data from the main control element 5. It is sent to the memory card 30 and written into the random access memory 32. Synchronous operation "6 ^ machine accesses the output of the $ memory body. The input signal and the pulse signal are generated by the microcontroller 38 '1 due to the memory The clock on the body chip is synchronized with the clock of the central processing unit ', so when executing commands and transmitting information, the synchronized synchronous dynamic P legacy machine accesses memory can save a lot of time and increase the overall performance of the system. The access memory 32 uses a capacitor to store data, and the capacitor needs to be continuously charged to keep it; the material is correct, so the present invention uses the power controller 42 to control the switch 46 to discharge the battery 44 to the random access memory. The body 3 2 facilitates self-refresh. When the memory card 3 〇 is electrically connected to the main control element 50 (with power supply), the power controller 4 2 then switches the switch 46 to enable the battery 44 to autonomously control the element 5 〇 Perform charging. After the memory card 30 is separated from the main control element 50, the power controller 42 sends a self-data update signal to the random access memory 32, and switches the switch 46 to put the battery 44 into the discharge mode. The random access The memory 32 has an independent and built-in data update circuit, and self-charges its internal capacitance within a certain time by the power of the battery 44 to ensure the correctness of the stored data. The microcontroller 38 also includes a The read-only memory 40 is used to store its firmware. Fig. 3 is a functional block diagram of the second embodiment of the memory card of the present invention. As shown in Fig. 3, the present invention contains a random access memory 6 2 to As a storage medium, the memory card 60 can be used with a USB-enabled main control element 80. Memory
H:\Hu\Hyg\ 麗臺科技\80938\80938.(|〇〇 本紙張尺度適用中國國家標準(CNS) A4规格(210X297公釐) 200410148H: \ Hu \ Hyg \ Leadtek \ 80938 \ 80938. (| 〇〇 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 200410148
卡60包含用以儲存資料之隨機存取記憶_、控制資料讀 寫之控制單元70及用以連接控制單元7〇及主控元件8〇之 USB連接器66。該記憶卡6〇亦句冬 r a含一電池7 4，以提供隨 機存取記憶體62在進行自我資料更新時所需之電力。該控 制單元70包含連接於隨機存取記憶體Q之資料轉換器 64、連接於資料轉換器64之快閃記憶體控制器68及控制 該電池7 4充/放電之電源控制器7 2。 主控元件80包含USB連接器82&USB控制器^。usb 連接器82係電連接於記憶卡6〇<Usb連接器66，並分別 由USB控制器84及記憶卡6〇之控制單元7〇將資料由隨機 存取記憶體62讀出並傳送至主控元件7〇，或將資料由主控 元件7 0傳送至e己憶卡6 〇並寫入隨機存取記憶體6 2中。資 料轉換器64係用以將支持USB之資料格式轉換成隨機存取 記憶體之資料格式，及/或將隨機存取記憶體之資料格式 轉換成支援U S B之資料格式。此外，同步動態隨機存取記 憶體所需之時脈訊號係由資料轉換器64產生（亦可用外部 電路產生）。電源控制器7 2係藉由控制開關7 6之切換，使 電池7 4放電給隨機存取記憶體6 2以利進行自我資料更新。 相較於習知技藝’本發明之記憶卡由於採用隨機存取憶 體做為資料讀/寫之儲存媒體，因此具有下列優點： 1 ·由於隨機存取記憶體之資料存取速度遠高於習知技藝 之N A N D型快閃記憶體，因此本發明之記憶卡存取速 度將大幅提昇，超越目前使用之U S B 2 · 0規格，且可 適用在未來更高速之IEEE1394規格。 \ ΗΛΗιΛΗ^\麗臺科技\80938\80938.(1(^ · 10 - 本紙取〜及通用中@國家標竿(CNS) Α4規格(21GX 297公釐)" 一嶋 200410148 A7 B7 五、發明説明（7 ) 2 .由於隨機存取憶體之晶粒成本遠小於N AND型快閃記 憶體，且市場上已有數量眾多之隨機存取憶體製造 商，因此可以較低價格取得製造記憶卡所需之記憶 體，且供貨來源亦較為穩定。 本發明之技術内容及技術特點巳揭示如上，然而熟悉本 項技術之人士仍可能基於本發明之教示及揭示而作種種不 背離本發明精神之替換及修飾。因此，本發明之保護範圍 應不限於實施例所揭示者，而應包括各種不背離本發明之 替換及修飾，並為以下之申請專利範圍所涵蓋。 、 .¾ H:\Hu\Hyg\庞臺科技\80938\80938.(1(^ - 1 1 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐）The card 60 includes a random access memory for storing data, a control unit 70 for controlling data reading and writing, and a USB connector 66 for connecting the control unit 70 and the main control element 80. The memory card 60 also includes a battery 74 to provide the power required by the random access memory 62 for self-data updating. The control unit 70 includes a data converter 64 connected to the random access memory Q, a flash memory controller 68 connected to the data converter 64, and a power controller 72 for controlling the charging / discharging of the battery 74. The main control element 80 includes a USB connector 82 & a USB controller. The usb connector 82 is electrically connected to the memory card 60 and the usb connector 66, and the data is read from the random access memory 62 by the USB controller 84 and the control unit 70 of the memory card 60 and transmitted to The main control element 70, or the data is transferred from the main control element 70 to the e-memory card 60 and written into the random access memory 62. The data converter 64 is used to convert a data format supporting USB to a data format of random access memory, and / or a data format of random access memory to a data format supporting USB. In addition, the clock signal required to synchronize the dynamic random access memory is generated by the data converter 64 (also can be generated by an external circuit). The power controller 7 2 discharges the battery 74 to the random access memory 62 by switching the control switch 76 to facilitate self-data updating. Compared with the conventional technique, the memory card of the present invention has the following advantages because it uses a random access memory as a storage medium for data reading / writing, and has the following advantages: 1. The data access speed of the random access memory is much higher than The NAND-type flash memory of the conventional technology, therefore, the memory card access speed of the present invention will be greatly improved, surpassing the current USB 2 · 0 specification, and applicable to the higher-speed IEEE1394 specification in the future. \ ΗΛΗιΛΗ ^ \ 丽台 科技 \ 80938 \ 80938. (1 (^ · 10-This paper is taken ~ and universal @National Standards (CNS) Α4 specifications (21GX 297 mm)) 嶋 200410148 A7 B7 V. Invention Explanation (7) 2. Since the die cost of the random access memory is much smaller than that of the N AND flash memory, and there are a large number of random access memory manufacturers in the market, the manufacturing memory can be obtained at a lower price. The memory required for the card and the source of supply are relatively stable. The technical content and technical characteristics of the present invention are disclosed above, but those familiar with the technology may still make various departures from the present invention based on the teaching and disclosure of the present invention. Spiritual substitutions and modifications. Therefore, the protection scope of the present invention should not be limited to those disclosed in the embodiments, but should include various substitutions and modifications that do not depart from the present invention, and are covered by the following patent application scope. \ Hu \ Hyg \ Pangtai Technology \ 80938 \ 80938. (1 (^-1 1-This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm)