TW577994B - Method of using electro-optic measurement system to measure magnetic field and using magneto-optic measurement system to measure electric field - Google Patents

Method of using electro-optic measurement system to measure magnetic field and using magneto-optic measurement system to measure electric field Download PDF

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TW577994B
TW577994B TW91117506A TW91117506A TW577994B TW 577994 B TW577994 B TW 577994B TW 91117506 A TW91117506 A TW 91117506A TW 91117506 A TW91117506 A TW 91117506A TW 577994 B TW577994 B TW 577994B
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magnetic field
electric field
scope
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measurement method
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Kuen-Wey Shieh
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Prec Instr Dev Ct Nat
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Abstract

The present invention provides a method where electro-optic measurement system is capable of measuring the magnetic field in addition to the electric field. The invented method also can be used in a magneto-optic measurement system that is capable of measuring the electric field in addition to the magnetic field. Furthermore, this new method can be used in any electric field or magnetic field measurement system, and is not confined in electro-optic or magneto-optic measurement system.

Description

五、發明說明(1) •發明領域 本發明係提供9二插古 應用於一雷伞旦,種方法可同時量測電場與墙 電場。電先置測系、统量測磁場或是以磁光量現 發明背景 電光:針量測^統的緣由及特點: 號,合:二:以 ''金屬探針量測-待測電路 敷使;ί:電路的操作頻率越來越高時,此 且…探=因是該金屬探針必須接觸該 量測ί法!i形成量測上的誤差。因此 里則方法的發展至為重要。 近:電光量測系統的發展,即是為解決上 ’,要因為電光量測系統中所使用的電来 輸入阻抗之特點。該電光量測系2 •里于藉由以下列詳細說明,俾得一更深入之了) 基本的工作原理·· 可為二探針系統是利用一晶體之電光特性 了為Ι^Τ3〇3,UNb03 KH2P03,K02P04 等。a 受到一外加電場作用時,其折射率將產生變虽 場,尤指 系統量測 之電壓信 方法則不 測電路, 該待測電 高頻信號 問題的新 體具有高 本工作原 匕類晶體 類晶體 由光學 577994 五 發明說明(2) _ 糸統的量測技術’因而可吾曰 J里測出此類晶體折射率的纟ji儿 置,進而推論得之外加電場之向量。 刃夂化 當該電光晶體受到外加電場作用時,其折 的關係為如下: 干/、电% n^CE) = nij(0) + rijkEk + SiiklEkE, +···· ⑴ 其中ri ik是線性(或稱為P o c k 1 e s )電光係數 (electro - optic coefficient)。在本号务明中,只考慮 P 〇 c k 1 e s電光係數的效應。 而P 〇 c k e 1 s電光係數所成的t e n s 〇 r則稱為 electro-optic tensor。又該折射率的變化量與該外加電 場之關係如下:V. Description of the invention (1) • Field of the invention The present invention provides nine two-insertion arches used in a thunder umbrella. This method can simultaneously measure the electric field and the wall electric field. Electricity first measurement system, magnetic field measurement or magneto-optical measurement. Background electro-optic: the reason and characteristics of the needle measurement system: No., combined: two: `` Metal probe measurement-the circuit under test is applied ; Ί: When the operating frequency of the circuit is getting higher and higher, and ... probing = because the metal probe must contact the measuring method! i forms a measurement error. Therefore, the development of the Lee method is very important. Nearly: The development of the electro-optical measurement system is to solve the above problem, because of the characteristics of the input impedance due to the electricity used in the electro-optic measurement system. The electro-optic measurement system 2 • The following detailed descriptions have been used to gain a deeper understanding.) Basic working principle. · The two-probe system can use the electro-optical characteristics of a crystal as ^^ 3〇3 , UNb03 KH2P03, K02P04 and so on. a When subjected to an external electric field, its refractive index will produce a variable field, especially the voltage measurement method of the system measurement does not measure the circuit. The new body of the problem of the high-frequency signal to be measured has a high original working crystal type. The crystal is described by optics 577994, five inventions (2) _ the traditional measurement technology of the system, so we can measure the refractive index of such crystals, and then infer the vector of the added electric field. Edge-cutting When the electro-optic crystal is subjected to an external electric field, the relationship between its breakage is as follows: dry /, electrical% n ^ CE) = nij (0) + rijkEk + SiiklEkE, + ···· ⑴ where ri ik is linear (Or Pock 1 es) electro-optic coefficient. In this issue, only the effect of the P o c k 1 e s electro-optic coefficient is considered. The t e n s 〇r formed by the electro-optic coefficient of P 0 c k e 1 s is called an electro-optic tensor. The relationship between the change in the refractive index and the applied electric field is as follows:

(2)(2)

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五、發明說明(3) -在不同方向所看到的電光晶體折射率可用一折射率橢 球方程式(The equation of The index elUps〇i 來 描述。 … 根據一雷射光的行進方向及折射率橢球,可以決定該 雷射光在晶體傳播的特徵波(eigenwave)及特徵值 (eigenvalue)。進而決定該電光晶體的〜(〇rdinary refractive index)以及〜(extra〇rdinary refractive i ndex )。當該電光晶體受到外加電場作用時,該折射率 橢球會產生伸縮形變(compressed stretched _ef0rmati〇n)及旋轉形變(rotati〇nal def〇rmati〇n )° 以下針對探針的幾何結構介紹如下。目前大致可分成 全反射式(total internal reflection)及高反射式 (high ref lection )兩種,其結構如第一圖所示。在第 一圖(a)中,該雷射光在晶體的各個切面上產生全反射, 經過3次全反射S!、S2、Sa,雷射光沿著與入射光平行的路 徑反射回去。而在第一圖(b)中,雷射光正面入射該晶體 的底部且從其底部正面反射回來。比較這兩種結構,該全 f射式的電光交互作用區域較大,所以會有較強的電光訊 號。但其缺點是其空間解析度(spatial resolution)較 差’這是因為相對於高反射式的結構中,其空間解析度只 為雷射光的光點大小(spot size)。該全反射式的另一 項缺點是3個全反射面的加工甚為不易,如果3個面的定位 及拋光處理不當,雷射光很難從晶體切面反射回來。V. Description of the Invention (3)-The refractive index of electro-optic crystals seen in different directions can be described by the equation of the index elUpsoi... According to the direction of laser light travel and the refractive index ellipse The sphere can determine the characteristic wave (eigenwave) and characteristic value (eigenvalue) of the laser light propagating in the crystal. Then, determine the (ordinary refractive index) and ~ (extra0rdinary refractive i ndex) of the electro-optic crystal. When the electro-optic When the crystal is subjected to an external electric field, the refractive index ellipsoid will produce a compressed stretched (efefrmatino) and a rotational deformation (rotational defomatio). The following describes the geometric structure of the probe as follows. It is divided into two types, total internal reflection and high ref lection, and its structure is shown in the first figure. In the first figure (a), the laser light generates a total Reflection, after three total reflections S !, S2, Sa, the laser light is reflected back along a path parallel to the incident light. In the first figure (b), the laser light is positive The bottom of the crystal is incident and reflected back from the front of the bottom. Comparing the two structures, the fully f-emission type electro-optic interaction area is larger, so there will be a stronger electro-optical signal. However, its disadvantage is its spatial resolution ( The spatial resolution is poor. This is because compared to the highly reflective structure, the spatial resolution is only the spot size of the laser light. Another disadvantage of this total reflection type is that of three total reflection surfaces. Processing is very difficult. If the positioning and polishing of the three surfaces are not performed properly, the laser light is difficult to reflect from the crystal cut surface.

第6頁 577994 五、發明說明(4) 至於雷射光源部份,可分為脈衝式雷射(pulse laseO 及連續式雷射(continuous wave laser)。該脈 衝式雷射一般使用""於取樣型(samp 1 ing)的量測系統,其基 本=作原理如第二圖所示。當該脈衝雷射出光的瞬間了 ^ ,里測到此瞬間的待測信號。如此一點一點的取樣,則能 1測到整個信號的波形,唯一的差別是此測得的信號頻率 低t該待測信號。其意義是能以較低頻的脈衝訊號量測到 較同頻的待測訊號。一般而言,超快雷射(ultra laser)的脈衝重複率(pulse repetiti〇n rate)都甚 高’所以可以量測到甚高頻的待測信號。相對於脈衝雷射 的f連續波雷射。常見的半導體雷射為CW laser。其特 性是成本低,可用來檢測弦波式的待測信號,但無法量測 如同第二圖中的重複性的任意信號。下面則就二維電光量 測糸統架構做一介紹。 二維電光量測系統架構: 二維量測系統是指當其探針放置在一待測物上方時, 該系統量測到該探針所在位置,與該待測物平行的二維電 場分量。根據陳蔚軒等(W· Η· Chen,w. K. Ku〇, s. L.Page 6 577994 V. Description of the invention (4) As for the laser light source, it can be divided into pulse laser (pulse laseO and continuous wave laser). The pulse laser is generally used " " For a sampling type (samp 1 ing) measurement system, the basic principle is as shown in the second figure. When the pulse laser emits light at an instant ^, the signal under test at this instant is measured. So little by little Point sampling can measure the entire signal waveform. The only difference is that the frequency of the measured signal is low and the signal to be measured. The meaning is that the signal of the same frequency can be measured with a lower frequency pulse signal. Measurement signal. Generally speaking, the pulse repetiti rate of ultra-fast lasers is very high, so very high-frequency signals can be measured. Compared to the f of pulsed lasers, Continuous wave laser. A common semiconductor laser is a CW laser. Its characteristic is low cost. It can be used to detect a sine wave type signal to be measured, but it is impossible to measure any signal like the repetitive signal in the second figure. An introduction to the two-dimensional electro-optical measurement system architecture. Measurement system architecture: The two-dimensional measurement system refers to the two-dimensional electric field component parallel to the object under measurement when the probe is placed above the object under measurement. According to Chen Weixuan (W · Η · Chen, w. K. Ku〇, s. L.

Huang, Υ· T· Huang, and Η·Ζ· Cheng, n〇n-Wafer 2DHuang, ΥT Huang, and ΗZ Cheng, n〇n-Wafer 2D

Electric-Field-Vector Mapping Using One^Beam Electro-Optic Probing Technique,1' Technical Digest oj CLEO’ 5 68 ( 2 00 0 ))提出以一束雷射光量測二電場分 里的系統架構。此系統是同時利用—電光晶體的伸縮形變 ΙΙΗΙΙΙ^^Ι 第7頁 577994Electric-Field-Vector Mapping Using One ^ Beam Electro-Optic Probing Technique, 1 'Technical Digest oj CLEO ’5 68 (2 0 0 0)) proposed a system architecture for measuring two electric field fractions with a beam of laser light. This system is used at the same time-telescopic deformation of electro-optic crystal ΙΙΙΙΙΙ ^^ Ι page 7 577994

五、發明說明(5) 及旋轉形變來測得兩個電場分量,其系統架構如第三_ & 示。在第三圖中,光源為波長632.8nm之一紅光半導體+ 射,該雷射光經遞3二45G反射鏡反射後再經過一偏振器田 (polarizer ),改變該雷射光的偏振狀態,再經過—顯 微鏡的聚焦作用入射至一電光晶體。此電光晶體為_全~反 射式的幾何結構。由於該電光晶體受到待測電場的作^, 產生一折射率的變化’進而改變了由晶體所反射出的雷射· 光的偏振狀態。該反射雷射光又經過一補償器 (compensator),其作用是調整其相位延遲(phase 籲etardation)使在一光檢測器(photo detector)所接 受到的信號為最強。Wo 11 as ton prism的作用是將雷射分 解為偏振正交的二束光,此二束光射入差動式的光檢測刀 器。而該差動的接收器為減低共模雜訊mQde noise ),亦同時增強電光信號的強度。 Εζ)及偏振 在5亥糸統中’電光信號I 〇與二維電場分量(e 器的角度中的數學關係式為: Χ W轉Θ咖解㈣⑹Κ ⑴ t 右㈣。,y〇=ac〇s(祕娘;而㈣5。,Α:邱n⑽△⑹乂 4 /此藉著改t,即可分別得到Εχ和匕兩個分量。第四圖 值與理論值的比較。此時待測物—電路板,中間刻 兩邊加上父流電壓彳§號。電光探針置於溝槽上 方。此時將偏振片的角度定在咖,由以(溝上上分V. Description of the invention (5) and rotation deformation to measure two electric field components. The system architecture is shown in the third example. In the third figure, the light source is a red light semiconductor + with a wavelength of 632.8nm. The laser light is reflected by a 32 × 45G mirror and then passes through a polarizer to change the polarization state of the laser light. Through-the focusing action of the microscope is incident on an electro-optic crystal. This electro-optic crystal has a _full ~ reflective geometry. Since the electro-optic crystal is subjected to the action of the electric field to be measured, a change in refractive index is generated ', which further changes the polarization state of the laser light reflected by the crystal. The reflected laser light passes through a compensator, and its function is to adjust its phase delay to make the signal received by a photo detector the strongest. The function of Wo 11 as ton prism is to decompose the laser into two beams of orthogonal polarization, and the two beams of light enter the differential light detection knife. The differential receiver reduces common mode noise (mQde noise) and also enhances the strength of the electro-optical signal. The mathematical relationship between the angle of the electro-optical signal I 0 and the two-dimensional electric field component (the angle of the device) in the 50 Hz system is as follows: χ W turns Θ coffee solution ㈣⑹ ⑴ ⑴ t right ㈣. s (秘 娘; and ㈣5., Α: Qiu n⑽ △ ⑹ 乂 4 / By changing t, we can get two components Εχ and dagger respectively. The comparison between the fourth graph value and the theoretical value. At this time, the test object —Circuit board, add the parent current voltage 彳 § on both sides of the middle engraving. The electro-optical probe is placed above the groove. At this time, the angle of the polarizer is set at the coffee,

577994577994

別S得Ex和Ez。之 第四圖中可看出 的一致性。 後’改變^值,量剩到相對應的10,由 此實驗值與數學式(3)計算出的理論值 V· · 以上是用一束光量測二 偏振片的角度設為0Q及45。。 雷射光量二維電場分量,其 中’二束雷射光同時射入電 別設定在0Q及45G。與第四圖 時量到二維電場分量,但其 二套信號檢測電路。 維電場分量,此系統中需要將 而另一習知方法則是利用二束 系統如第五圖所示。在第五圖 光晶體中,其對應的偏振器分 作比較’第五圖之優點是可同 代價是光路系統較為複雜且需 三維電光量測系統架構·· 根據郭文凱等(^}(.1(11〇,3.1}11^1^,1\3·Don't get Ex and Ez. The consistency can be seen in the fourth figure. After changing the value of ^, the amount remains to the corresponding 10, from the experimental value and the theoretical value V calculated by mathematical formula (3). The above is the angle of the two polarizers measured with a beam of light set to 0Q and 45 . . The amount of laser light is a two-dimensional electric field component, in which two laser beams are simultaneously incident on electricity, and are set at 0Q and 45G. As shown in the fourth figure, two-dimensional electric field components are measured, but two sets of signal detection circuits are used. Dimensional electric field components are needed in this system. Another conventional method is to use a two-beam system as shown in Figure 5. In the fifth photonic crystal, the corresponding polarizer is compared. The advantage of the fifth photo is that the optical path system is more complicated and requires a three-dimensional electro-optical measurement system architecture. According to Guo Wenkai et al. (11〇, 3.1) 11 ^ 1 ^, 1 \ 3 ·

Horng, and L.C.Chang MTwo-Dimensional Mapping of Electric-Field Vector by Electro-optic Prober,,, Optics Comm·, 149,55-60 ( 1 998 ))在二維量測系統的 ,礎上’發展二維電光量測系統系統,如第六圖所示。此 系統中二束雷射光沿不同路徑射入電光晶體,同時也沿著 不同路徑反射,如第七圖所示。由三束光的信號變化可由 聯立方程式解出三維電場分量。 ^傳統上’電磁量測系統只能量測待測物的電場或磁 =,尚無法同時量測電場及磁場。職是之故,本發明鑒於 f头技=之缺失,乃思及改良發明之意念,發明出本案之 以電光$測系統量測磁場及以磁光量測系統量測電場之Horng, and LCChang MTwo-Dimensional Mapping of Electric-Field Vector by Electro-optic Prober ,,, Optics Comm., 149, 55-60 (1 998)) on the basis of the two-dimensional measurement system, the development of two-dimensional The electro-optic measurement system is shown in Figure 6. In this system, two laser beams enter the electro-optic crystal along different paths, and are also reflected along different paths, as shown in Figure 7. From the signal changes of the three beams of light, three-dimensional electric field components can be solved by simultaneous equations. ^ Traditionally, the electromagnetic measurement system can only measure the electric or magnetic field of the object to be measured. It is not yet possible to measure the electric and magnetic fields simultaneously. Therefore, in view of the lack of f-head technology, the present invention considers and improves the idea of the invention, and invented the case of measuring the magnetic field with the electro-optical $ measuring system and measuring the electric field with the magneto-optical measuring system.

577994 五、發明說明(7) .方法』。 發明概述 本發明之目的係 量得待測物之電場與」一:,使τ電光探針系統可同峙 得待測物之電場與磁場野,或疋使磁光探針系統可同時量 根據本發明之楚 測系統測量-待測元;利用電場探針量 IPR針在該待測元件 匕3下列步驟:該 m ^ ^ 千上/0 一方向做調變,量測嗲ϋ、3丨L e %,並產生一電場調變 =別該待測物之電 部分;以及利用哕雷ί:; ϊΐ出该電场調變訊號之交流 物之磁場。電场調變訊號之交流部分計算出該待測 根據上述之構想,其中場 光探針车絲〜1。+ * τ里,則糸統係為一電 =統(electro—optic pr〇bing system) / 根據上述之構想 維電場之一。 根據上述之構想 維磁場之一。 根據上述之構想 根據上述之構想,其中該方向係包含X,y,z方向。 其中該電場係為一三維電場以及 礤 其中該磁場係為一 你 其中該電場探針量測系統更包含/ =通濾波器(low pass filter,LPF),係用以檢 J場調變訊號之直流部分,肖直流部分即為該待測物之電577994 V. Description of the invention (7). Method ". Summary of the invention The purpose of the present invention is to measure the electric field of the object to be measured and "a: to enable the τ electro-optical probe system to simultaneously obtain the electric and magnetic fields of the object to be measured, or to enable the magneto-optical probe system to measure The measurement system of the present invention measures-the element to be measured; the electric field probe is used to measure the IPR needle in the following steps of the component under test: the m ^ ^ thousand on / 0 direction modulation, measuring 嗲 ϋ, 3 丨Le e%, and generate an electric field modulation = the electric part of the object to be measured; and use the thunder ί :; to extract the magnetic field of the AC object's modulated signal. The AC part of the electric field modulation signal is calculated to be the one to be measured. According to the above concept, the field light probe wire ~ 1. + * τ, then the system is an electro-optic system (electro-optic prObing system) / according to the above-mentioned concept to maintain one of the electric fields. One of the dimensional magnetic fields according to the above concept. According to the above idea, according to the above idea, wherein the direction includes X, y, and z directions. The electric field is a three-dimensional electric field, and the magnetic field is a magnetic field. The electric field probe measurement system further includes a low pass filter (LPF), which is used to detect the modulation signal of the J field. DC part, Xiao DC part is the electricity of the DUT

第10頁 577994Page 10 577994

五、發明說明(8) 根據上述之構想,其中該電場探名 包穷休計S測糸統更包八 鎖相放大=(lock-in amplifier),係用以檢測3〜 場調變訊號之交流,分。 @電 根據f發明之第二構想在於提供一種利用 測系統測罝一待測元件之磁場之方法,包含下列步針重 定該探針,並沿一方向移動該待測元件做調變,^測^固 測物之電場’並產生-電場調變訊號;檢出該電場調。寺 號之交流部分;以及利用該電場調變訊號之交流部 出該待測物之磁場。 刀叶昇 根據上述之構:想,其中該電場探針量測系統係 光探針系統(electro-optic probing system )。 電 根據上述之構想 維電場之一。 根據上述之構想 維磁場之一。 根據上述之構想 根據上述之構想,其中該方向係包含χ,y,z方。 其中該電場係、為―三維電$二二 其中該磁場係為一i維磁場以及 其中該電場探針量測系統更包八 低通遽波器(low pass filter, LPF、,尨田、, 3 一 J 你用以》檢測φ a 電場調變訊號之直流部分,該直流部分 、出讀 |乃即為该待測物 場。 电 根據上述之構想,其中該電場探針量測系統更 鎖相放大器(lock - in amplifier),孫田〜认、· B〜 1系用以檢測出該 場調變訊號之交流部分。 Λ電 根據本發明之第三構想在於提供一種利用磁場探針量V. Description of the invention (8) According to the above-mentioned concept, the electric field detection package includes a full-time measurement system and an eight-phase lock-in amplifier (lock-in amplifier), which is used to detect 3 ~ field modulation signals. Exchange, points. @ 电 The second idea of the invention is to provide a method for measuring the magnetic field of a component under test using a measurement system, including the following steps to reset the probe, and moving the component under test in one direction for modulation. ^ The electric field of a solid object is detected and an electric field modulation signal is generated; the electric field modulation is detected. The exchange part of the temple; and the exchange part using the electric field to modulate the signal to output the magnetic field of the object to be measured. Blade Ye Sheng According to the above-mentioned structure: It is thought that the electric field probe measurement system is an electro-optic probing system. Electricity According to the above concept, one of the electric fields is maintained. One of the dimensional magnetic fields according to the above concept. According to the above idea, according to the above idea, wherein the direction includes χ, y, and z squares. The electric field system is a three-dimensional electric $ 22, where the magnetic field system is an i-dimensional magnetic field, and the electric field probe measurement system further includes eight low pass filters (LPF ,, Putian ,, 3 One J you use to detect the DC part of the φ a electric field modulation signal. The DC part, read out | is the field of the object to be measured. Electricity According to the above concept, the electric field probe measurement system is more locked. Phase amplifier (lock-in amplifier), Sun Tian ~, B ~ 1 are used to detect the AC part of the field modulation signal. Λ Electric according to the third concept of the present invention is to provide a magnetic field probe

第11頁 577994 五、發明說明(9) .測系統測量一待測元件之電場之方法,包含下列步驟:咳 j針測元件上沿一方向做調變,量測該待測物之磁 二二調變訊號;檢出該磁場調變訊號之交流 =電i 場調變訊號之交流部分計算出該待測 根據上述之構想,其中該磁場探針量測系 光探針系統(magneto-optic probing system) ’。、 上述之構想’其中該方向係包含χ,y,z方向。 •維ΐϊΐΐ之構想,其中該電場係為-三維電場以及- 一維=2之構想,"該磁場係為-三維磁場以及- “ ΐ ϊ ϋ之構想’其中該磁場探針量測系統更包含-磁場調變訊號之直流部☆,該直流丄: = :::: 場。 灿 述之構想’其中該磁場探針量測系統更包含一 鎖相放大器(l〇ck-ln amplifier),係用以 设調變訊號之交流部分。 、彳出違磁 根據本發明之第四構想在於一種利用磁場探 統測量-待測元件之電場之方法,包含下列步冑.^糸 探針,並沿一方向移動該待測元件做 旦如固疋該 之磁場,並產生一磁場調變訊號;檢出兮二,該待測物 流部分,以及利用該磁場調變訊號之交流部分計Page 11 577994 V. Description of the invention (9). The method for measuring the electric field of a component under test by the measuring system includes the following steps: adjust the direction of the needle measurement component in one direction, and measure the magnetic properties of the component under test. Two modulation signals; the AC that detected the magnetic field modulation signal = the AC portion of the electric field modulation signal was calculated. The test to be tested was based on the concept described above, where the magnetic field probe measurement is an optical probe system (magneto-optic probing system) '. The above conception, wherein the direction includes χ, y, and z directions. • The concept of Weiye, where the electric field is-the three-dimensional electric field and-one-dimensional = 2, " the magnetic field is-three-dimensional magnetic field and-"ΐ ΐ ϋ ϋ 的 'Concept' where the magnetic field probe measurement system is more Including the DC part of the magnetic field modulation signal ☆, the DC 丄: = :::: field. Canshu's idea 'where the magnetic field probe measurement system further includes a phase-locked amplifier (10ck-ln amplifier), It is used to set the AC part of the modulation signal. To detect the demagnetization According to the fourth concept of the present invention, a method for measuring the electric field of a component to be measured using a magnetic field probe system includes the following steps: Move the component under test in one direction to fix the magnetic field, and generate a magnetic field modulation signal; when the second phase is detected, the logistics part under test, and the AC component using the magnetic field modulation signal are calculated.

第12頁 577994Page 12 577994

五、發明說明(ίο) 測物之電場。 根據上述之構想’其中該磁場探針量測系統係為一磁 光探針系統(megrrfcto-optic probincr ^ 、 system; 〇 根據上述之構想’其中該方向係包含 根巧上述之構想’其中該電場係為一三維電場以°及° 一 一維電場之^—。 根據上述之構想 二維磁場之一。 其中該磁場係為一 三維磁場以及一 量測系統更包含一 ,係用以檢測出該 即為該待測物之磁 根據上述之構想,其中該磁場探針 低通渡波器(low pass filter,LPF) 磁場調變訊號之直流部分,該直流部分 針量測系統更包含一 係用以檢測出該磁 明,俾得一更深入之 根據上述之構想,其中該磁場探 鎖相放大器(lock-in amplifier) 場調變訊號之交流部分。 本案得藉由以下列圖示與詳細說 了解。 ϋ 圖示簡單說明 ϊ = 習知全反射式電光晶體的幾何剖面圖; Ϊ:ί t 高反射式電光晶體的幾何剔面圖; 第一圖U)係習知雷射光源之待測訊號示音圖; 第二圖(b)係習知雷射光源之取樣訊號示音圖;V. Description of the Invention (ίο) The electric field of the measured object. According to the above conception, wherein the magnetic field probe measurement system is a magneto-optic probe system (megrrfcto-optic probincr ^, system; 〇 According to the above conception, wherein the direction includes the above-mentioned concept, where the electric field It is a three-dimensional electric field with ° and ° a one-dimensional electric field. One of the two-dimensional magnetic fields according to the above concept. The magnetic field is a three-dimensional magnetic field and a measurement system further includes one, which is used to detect the That is, the magnetism of the object to be tested is based on the above-mentioned concept, wherein the magnetic field probe low-pass filter (LPF) magnetic field modulates the DC part of the signal, and the DC part needle measurement system further includes a system for Detect the magnetism, and get a deeper idea based on the above, where the magnetic field probes the AC part of the field-modulated signal of the lock-in amplifier. This case can be understood by the following diagram and details Ϋ Brief description of the diagram ϊ = Geometric sectional view of a conventional total reflection electro-optic crystal; Ϊ: ί t Geometrical cut-away view of a highly reflective electro-optic crystal; First picture U) is the treatment of a conventional laser light source The sound signal diagram of the measurement signal; The second image (b) is the sample signal sound diagram of the conventional laser light source;

577994 五、發明說明(11) 第二圖(C )係習知雷射并 一 第三圖係習知一光束二」’、之測得訊號不意圖; -第四圖係習知電舡作;:f電光量測系統示意圖; 值比較示意圖; 化相對於偏振片角度的理論值與實驗 第五圖係習知一光束二 第六圖係習知二光束二ί電光量測系統示意圖; 第七圖係習知三束光光量測系統示意圖; 圖; 电光晶體中沿不同路徑的傳播示意 第八圖係習知電光探針 參九圖係習知磁光探針二:糸統之方塊示意圖; 5十圖係本案較佳實二則糸統之方塊示意圖;以及 方塊示意圖。 加入調變後電光探針量測系統之 較佳實施例說明 體4::U光t針是藉著晶體的電光效應,即當晶 π , π & =姐Γ、用時,晶體的折射率會發生微量的變 :恭一以及信號處理檢測出此微量變化,進而反 笔# J:场!!強ΐ及相位。同理,磁光探針是藉著晶體的 ,,丨屮::批二:曰曰體叉到外加磁場作用時,經量測系統檢 广出日:體折射率的微量變化,反推磁場。根據一種調變 (modulation)技術(K· w· Shieh t,Meth〇d f〇r577994 V. Description of the invention (11) The second picture (C) is a conventional laser and the third picture is a conventional one. The measured signal is not intended;-the fourth picture is a conventional electric operation. ;: f schematic diagram of electro-optical measurement system; schematic diagram of value comparison; theoretical values and experiments with respect to the angle of the polarizer. The fifth diagram is a conventional two-beam two electro-optical measurement system; Figure 7 is a schematic diagram of a conventional three-beam light-optical measurement system; Figures; Schematic diagrams of propagation along different paths in an electro-optic crystal Figure 8 is a conventional electro-optic probe See Figure 9 is a conventional magneto-optical probe Schematic diagram; Figure 50 is a block diagram of the second system of this case; and a block diagram. The preferred embodiment of the electro-optic probe measurement system after the modulation is added. The body 4 :: U optical t-pin is based on the electro-optic effect of the crystal, that is, the refraction of the crystal when the crystal π, π & = sister Γ. The rate will change slightly: Kyoichi and signal processing detect this slight change, and then reverse # J: Field !! In the same way, the magneto-optical probe is based on the crystal. 屮 :: batch 2: when the body fork is applied to the external magnetic field, it is detected by the measurement system. . According to a modulation technique (K · W · Shieh t, Meth〇d f〇r

Measuring Magnetic Field Based 〇n Electro-Optic Probing Technique and Measuring Electric FieldMeasuring Magnetic Field Based 〇n Electro-Optic Probing Technique and Measuring Electric Field

第14頁 577994Page 14 577994

Based on Magnetic Probing Technique,” If pending.),在電光探針的所在位置做調 AP^ = nt 光信號傳至電腦敗^簡單的計算,即能同 ^ 1仟的電 場。第八圖是電光探針量測系統的示意圖== 標是(X,y, Z),而量測系統的輸出是( 7在的座 三維向量電場Ex, £y, Ez。 ,y,z)所在的 /Ex為例,若在x方向做調變,則輸出為卜一咖 ,右△«〇 , mEx可以數學式(4)來表示 (4)Based on Magnetic Probing Technique, "If pending.), Adjust the AP at the location of the electro-optic probe. ^ = Nt The optical signal is transmitted to the computer. Simple calculation, that is, the same electric field as ^ 1 仟. The eighth figure is electro-optical Schematic diagram of the probe measurement system == The standard is (X, y, Z), and the output of the measurement system is (3, the three-dimensional vector electric field Ex, £ y, Ez., Y, z) where / Ex For example, if the modulation is performed in the x direction, the output is Bu Yi Jia, and the right △ «〇, mEx can be expressed by mathematical formula (4) (4)

Ex(x +A sin wmty y9 z)« Ex(x, y,z) +A sin wj 呢(之’’Z) 同理Ex (x + A sin wmty y9 z) «Ex (x, y, z) + A sin wj

Ey (x + A sin γ} z); "^) + Asin w dEy{x,y,z) (5) m dx +Δ sin yvmt,y, z)^ ^) + Asin w it ^Ε:(χ,γ,ζ) 1 dx (6) 以數學式(5 )為例,輸出%中的直流信號為Ey (X,y,z ),即電場的y分量’而交流部分則有y分量電場對χ 的偏導數dEy(X^y>Z) °Ey (x + A sin γ) z); " ^) + Asin w dEy {x, y, z) (5) m dx + Δ sin yvmt, y, z) ^ ^) + Asin w it ^ Ε: (χ, γ, ζ) 1 dx (6) Take the mathematical formula (5) as an example, the DC signal in the output% is Ey (X, y, z), that is, the y component of the electric field 'and the ac component has a y component Partial derivative of electric field to dEy (X ^ y > Z) °

CX 如第九圖所示,經由低通濾波器(low pass Π 1 ter (LPF))可將直流信號Ey(x,y,z)檢出;而經由鎖相放大器 (l〇ck-in amplifier),可將交流信號的振幅CX As shown in the ninth figure, the DC signal Ey (x, y, z) can be detected through a low-pass filter (low pass Π 1 ter (LPF)); and through a lock-in amplifier (10ck-in amplifier) ), The amplitude of the AC signal

第15頁 577994Page 15 577994

• UmPlitude)檢出。 Π理在y及z方^向作調變,在第九圖則能得到 AdEi(x,y,z) Δ ^ > hj^x9y,zAEi (x, y , Z )。 根據馬克斯威爾方程式(Maxwell Equations), (7) ▽ X E = - 展開則得• UmPlitude). Π is adjusted in the y and z directions, and AdEi (x, y, z) Δ ^ > hj ^ x9y, zAEi (x, y, Z) can be obtained in the ninth figure. According to Maxwell Equations, (7) ▽ X E =-

Hx: 1 (¾. -Jwu dy -警) Hy: 1(¾ -j\niv dz dx’ Η, 1 (¾ dEx、 -yvw v dx (8) 其中)=7^1,>^==2;/,f是待測電磁場的工作頻率,#是導 <1係數。將探針位置做調變如能得到的 ,代 入數學式(8)即能得到三維磁場。 dj 然在第九圖中,鎖相放大器(lock - in amplifier) 的輸出是△馬^),而不是。以標準待測物Hx: 1 (¾. -Jwu dy-警) Hy: 1 (¾ -j \ niv dz dx 'Η, 1 (¾ dEx, -yvw v dx (8) where) = 7 ^ 1, > ^ == 2; /, f is the operating frequency of the electromagnetic field to be measured, # is the coefficient of the guide < 1. If the position of the probe is adjusted, it can be obtained by substituting into the mathematical formula (8) to obtain a three-dimensional magnetic field. In the figure, the output of the lock-in amplifier is ΔM ^) instead of. Standard test object

句 J 577994Sentence J 577994

δΕ^χ,γ,ζ) dj 。其過程如下: ’其表面的電場磁場為已 校 將 正(cal ibrat ion),貝丨j能量得 探針置於一標準待測物的表面 知 相 。調變探針位置時,得到 dj 減’並根據數學式(8)中的第一式得 網1此類信號作代數 A(dEAx,y,z) dEy(XiyjZ) (―^ (9) •數學式(9)左邊是鎖相放大器(i〇ck-iri amplifier) 輸出的結果直接相減而成,為已知;右側ΙΙχ為標準待測物 表面X分量的磁場,亦為已知。以此可求出D,由此可準確 ^dE^x, y,z) — 的將lock-in amplifier的輸出 句 變成翌『)_。經 過此校正過程,此探針量測系統便可同時測得任;何待測物 所產生的電場及磁場。 同理’第十圖是磁光探針量測系統的示意圖,系統輸 出是探針所在位置(x,y,z)的三維向量磁場扎,H” Η 。】 如同在電光探針量測系統中一般,對磁光探針的y位置2 變,可得Η“χ,y,z)及 mXw) , i * v dj 1,卜 x,y,z 〇δΕ ^ χ, γ, ζ) dj. The process is as follows: ′ The electric field and magnetic field on its surface are calibrated, and the probe is placed on the surface of a standard test object. When adjusting the position of the probe, get dj minus' and get the net 1 according to the first formula in mathematical formula (8). Such signals are used as algebra A (dEAx, y, z) dEy (XiyjZ) (― ^ (9) • The left side of the mathematical formula (9) is the result of the direct output reduction of the ioc-iri amplifier, which is known; the right side Ιχ is the magnetic field of the X component of the surface of the standard test object, which is also known. This can be used to find D, which can accurately ^ dE ^ x, y, z) — turn the output sentence of the lock-in amplifier into 翌 『) _. After this calibration process, this probe measurement system can measure any task at the same time; what electric and magnetic fields are generated by the object to be measured. Similarly, the tenth figure is a schematic diagram of a magneto-optical probe measurement system. The output of the system is a three-dimensional vector magnetic field at the position of the probe (x, y, z), H "】.] As in the electro-optic probe measurement system In general, if the y position 2 of the magneto-optical probe is changed, Η "χ, y, z) and mXw), i * v dj 1, and x, y, z can be obtained.

I 代入Maxwel1 Equation , (10)I substitute Maxwel1 Equation, (10)

VxH =加EVxH = plus E

577994 五、發明說明(15) 展開即得 £ fdH· E: E, —(S β^ε dx (11 广中 /疋介電係數(perm i t i vi ty )。將MO探斜 所传到的,^代入數學式UU即得Εχ,Ey針:變 *不揭限於電光d】:二:系統推得三維磁場的方 ,探針,亦可適用於任何形式场的方法不询限於磁 ,:電場量測系統推得三維::探針。再者,此種以 =形式的電場探針丄不:限f電光探針,可適 磁J =方法不揭限於磁光探針T;磁場量剛系統推得-讀針。 十亦可適用於任何形式的 本案量測系統量測電磁場之優點: L傳統上,欲量測待測物夺而 、先。此時探針所在的位置會=2場及磁場必須更換系 ___ .吏換系統而無法位於同一 苐18頁 577994 五、發明說明(16) 點。亦即無法量測同一 差。此誤差在低頻時尚不二:磁:二:造成量測上的誤 形明顯。尤其在料高頻電子電路^兩頻信號時則愈 情況下,以此種創新的量測的頻率日益增高的 題。 j电磁%的方法將可避免此一問 2.目前電光晶體的頻寬約為6〇GHz 為5GHz。亦即在傳統的方先曰曰體的頻寬約 可到5GHz。然而以加入調變的電光 頻率最南 場頻率將可高達60GHZ,大幅搵t ρ 系統里侍的磁 3 @ , +田^同磁場頻率的量測範圍。 3·目刖在電磁干擾(electr〇magnetic丨 腿)及天線輻射場形(radiatiQn pattern)==C,e已 近場據來推得遠場的場形。由於量測斤系統的已限有 制,只月b量到近場的電場或磁場。但 j 、·、 到電磁場,但可大幅縮短從近場轉換的 所需的記憶體空間。 野的4异時間與 4·就成本上的考量,以單一套量測系統量電 起二套系統量二個物理量而言,將可一…、眾 綜上所述,本案得由熟知此技術之人士任厂> =成本二 修飾,然皆不脫如附申請專利範圍所欲保言^ : 了而為諸般 8 第19頁 577994 -圖式簡單說明 ^ ---- 第一圖(a)係習知全反射式電光晶體的幾何剖面圖. 第一圖(b)係習知高反射式電光晶體的幾何剖面圖. 第二圖(a )係習知雷·射光源之待測訊號示意圖; 第二圖(b)係習知雷射光源之取樣訊號示意圖; 第二圖(c )係習知雷射光源之測得訊號示意圖; 第三圖係習知一光束二維電光量測系統示意圖; 第四圖係習知電光信號相對於偏振片角度的理% 值比較示意圖; _值與實驗 第五圖係習知一光束二維電光量測系統示意圖; #六圖係習知二光束二維電光量測系統示意圖; 第七圖係習知三束光在電光晶體中沿不同路徑 圖; 得播示意 第八圖係習知電光探針量測系統之方塊示意圖; 第九圖係習知磁光探針量測系統之方塊示意圖j 第十圖係本案較佳實施例加入調變後電光探 -方塊示意圖。 丁里测糸統之 圖示符號說明 光束 光束 全反射 B3 s2 2 :光束 1 ·全反射 3 ·全反射577994 V. Description of the invention (15) The result is £ fdH · E: E, — (S β ^ ε dx (11 Guangzhong / 广 dielectric constant (perm iti vi ty)). Passed by the MO survey, ^ Substitute the mathematical formula UU to get Εχ, Ey pin: change * not limited to electro-optic d]: two: the three-dimensional magnetic field method, the probe, can also be applied to any form of field method is not limited to the magnetic field The measuring system pushes three-dimensional :: probe. Furthermore, this type of electric field probe in the form of = does not: limit f electro-optical probe, suitable magnetization J = method is not limited to magneto-optical probe T; The system pushes-reads the needle. Ten can also be applied to any form of the measurement system's advantages of measuring the electromagnetic field: L Traditionally, you want to measure the object to be measured first. At this time the position of the probe will be = 2 The field and magnetic field must be replaced. The system cannot be located on the same page, page 577994. V. (16) point of the invention. That is, the same difference cannot be measured. This error is not uncommon at low frequencies: magnetic: two: caused The measurement error is obvious. Especially when the high-frequency electronic circuit ^ two-frequency signal is getting worse, with this innovative measure The problem of increasing frequency of frequency. J The method of electromagnetic% will avoid this question. 2. The current bandwidth of electro-optic crystals is about 60GHz to 5GHz. 5GHz. However, with the modulation of the electro-optic frequency, the southernmost field frequency will be as high as 60GHZ, which greatly increases the measurement range of the magnetic field frequency in the system. electr〇magnetic 丨 leg) and antenna radiation field pattern (radiatiQn pattern) == C, e has been derived from the near field to obtain the far field field pattern. Due to the limited measurement system, only the monthly b can be measured to near The electric or magnetic field of the field. But j, ·, and the electromagnetic field, but can greatly reduce the memory space required to switch from the near field. The 4 different time of the wild and 4 · in terms of cost considerations, a single set of measurement system As for the measurement of two physical quantities from two sets of electricity, one will be able to ... One, as mentioned above, this case may be made by a person familiar with this technology > = cost two modification, but it is not as good as attaching the scope of patent application Desire to swear ^: Become well and everything 8 Page 19 577994-Simple illustration of the diagram ^ ---- First picture a) A geometrical cross-section of a conventional total reflection electro-optic crystal. The first diagram (b) is a geometrical cross-section of a conventional highly reflective electro-optic crystal. The second diagram (a) is a schematic diagram of a signal to be measured by a conventional laser light source. The second picture (b) is a schematic diagram of the sampling signal of a conventional laser light source; the second picture (c) is a schematic diagram of the measured signal of a conventional laser light source; the third picture is a conventional two-dimensional electro-optical measurement system of a light beam Schematic diagram; The fourth diagram is a schematic diagram of the comparison of the theoretical% value of the electro-optical signal with respect to the angle of the polarizer; the _ value and the experiment are the fifth diagram of the conventional one-beam two-dimensional electro-optical measurement system; Schematic diagram of a two-dimensional electro-optical measurement system; The seventh diagram is a conventional diagram of three beams of light in an electro-optic crystal along different paths; the eighth diagram is a block diagram of a conventional electro-optical probe measurement system; the ninth diagram is a conventional diagram The block diagram of the magneto-optical probe measurement system j. The tenth diagram is a schematic diagram of the electro-optical detection after the modulation is added to the preferred embodiment of the present case. Dingli measuring system of the symbol description beam beam beam total reflection B3 s2 2: beam 1 · total reflection 3 · total reflection

第20頁Page 20

Claims (1)

3//994 六、申請專利範圍 -- 種利用電場探針量測系統測量一待測元件之磁場之方 法,包含下列步驟: 野《方 物之ϊ Ϊ針在該待,則元件上沿一方向做調變,量測該待測 物之電%,並產生—電場調變訊號; 檢出該電場調變訊號之交流部分;以及 場。利用該電場調變訊號之交流部分計算出該待測物之磁 mm: 第1項所述之量測方法,其中該電場探 、、”糸為一電光探針系統(e 1 e c t r 〇 - 〇 p t i c probmg system )。 其中該方向係 其中該電場係 其中該磁場係 其中該電場探 ^ =申請專利範圍第丨 述之量測方法 包含X, y, z方向。負 如申請專利範圍第1項所述之量測方法 為一f維電場以及—二維電場之一。 盔二_凊專利範圍第1項所述之量測方法 為二f維磁場以及一二維磁場之一。 針=請專利範圍第1項所述之量測方法,、一―休 )里^糸統更包含—低通濾波器(l〇W paSS f i 1 ter,LPF v b ?用以檢測出該電場調變訊號之直流部分.,該直流部 待測物之電場。 二θ、清專利範圍第1項所述之量測方法,其中該電場探 $測系統更包含一鎖相放大器(lock-in amplifier 係用以檢測出該電場調變訊號之交流部分。 種利用電場探針量測系統測量一待測元件之磁場之方3 // 994 VI. Application for Patent Scope-A method for measuring the magnetic field of a component under test using an electric field probe measurement system, including the following steps: The direction is adjusted, and the electric% of the object to be measured is measured, and the electric field modulation signal is generated; the AC part of the electric field modulation signal is detected; and the field. Use the AC portion of the electric field modulation signal to calculate the magnetic mm of the object to be measured: The measurement method described in item 1, wherein the electric field detection, and "" are an electro-optic probe system (e 1 ectr 〇- 〇 ptic probmg system). where the direction is where the electric field is where the magnetic field is where the electric field is detected ^ = The measurement method described in the scope of the patent application includes directions X, y, and z. The negative is as described in item 1 of the scope of patent application. The measurement method described is one of a f-dimensional electric field and a two-dimensional electric field. The measurement method described in Item 1 of the Helmet II_ 凊 patent scope is one of a two-dimensional magnetic field and a two-dimensional magnetic field. Needle = please patent The measurement method described in the first item of the scope, the 糸 system includes a low-pass filter (10W paSS fi 1 ter, LPF vb) to detect the DC of the electric field modulation signal. Part. The electric field of the object to be measured in the DC part. The measurement method described in item 1 of the patent scope of θ and Qing, wherein the electric field detection system further includes a lock-in amplifier (for detecting The AC part of the electric field modulation signal is output. Probe measuring system measures the magnetic field of a component under test 第21頁 577994 •六、申請專利範圍 -法,包含下列步驟: 固定該探針,並沿一方向移動該待測元件做調變,量 測該待測物之電場4並產生〆電場調變訊號; 檢出該電場調變訊號之交流部分;以及 利用該電場調變訊號之交流部分計算出該待測物之磁 場。 9 ·如申請專利範圍第8項所述之量測方法,其中該電場探 針量測系統係為一電光探針系統(electr〇-〇pt ic probing system )。 其中該方向係 其中該電場係 其中該磁場係、 其中該電場探 ·如申請專利範圍第8項所述之量測方法 包含X, y,z方向。 11 ·如申請專利範圍第8項所述之量測方法 為一三維電場以及一二維電場之一。 12·如申請專利範圍第8項所述之量測方法 為一二維磁場以及一二維磁場之一。 1 3 ·如申请專利範圍第g項所述之里測方法 針量測系統更包含一低通滤波器(low pass ii Iter,LPF ) 係用以檢測出該電場調變訊號之直流部分,該直流部 _分即為該待測物之電場。 4 ·如申請專利範圍第8項所述之量測方法,其中該電場探 針量測系統更包含一鎖相放大器(lock-in amplifier ),係用以檢測出該電場調變訊號之交流部分。 1 5 ·、一種利用磁場探針量測系統測量一待測元件之電場之 方法包含下列步驟··Page 21 577994 • Sixth, the scope of patent application-method, including the following steps: Fix the probe, and move the DUT in one direction for modulation, measure the electric field 4 of the DUT and generate a 〆 electric field modulation Signal; detecting the AC portion of the electric field modulation signal; and using the AC portion of the electric field modulation signal to calculate the magnetic field of the object under test. 9. The measurement method as described in item 8 of the scope of patent application, wherein the electric field probe measurement system is an electro-optic probe system (electr0-〇pt ic probing system). Where the direction is where the electric field is where the magnetic field is where the electric field is probed. The measurement method described in item 8 of the scope of the patent application includes X, y, and z directions. 11 · The measurement method described in item 8 of the scope of patent application is one of a three-dimensional electric field and a two-dimensional electric field. 12. The measurement method described in item 8 of the scope of patent application is one of a two-dimensional magnetic field and a two-dimensional magnetic field. 1 3 · As described in item g of the scope of patent application, the needle measurement system further includes a low-pass filter (low pass ii Iter (LPF)) for detecting the DC portion of the electric field modulation signal. The DC part is the electric field of the object to be measured. 4 · The measurement method as described in item 8 of the patent application scope, wherein the electric field probe measurement system further includes a lock-in amplifier, which is used to detect the AC portion of the electric field modulation signal . 1 5. A method for measuring the electric field of a component under test using a magnetic field probe measurement system includes the following steps: 第22頁 577994 六、申請專利範圍 該探針在該待測元件上沿一方向做調變,量測該待測 物之磁場,並產生一磁場調變訊號; 檢出該磁場調j變訊號之交流部分;以及 利用該磁場調變訊號之交流部分計算出該待測物之電 場。 1 6 ·如申請專利範圍第丨5項所述之量測方法,其中該磁場 探針量測系統係為一磁光探針系統(magneto-optic probing system ) 〇 1 7 ·如申請專利範圍第丨5項所述之量測方法,其中該方向 係包含X,y,z方向。 其中該電場 1 8 ·如申请專利範圍第1 g項所述之量測方法 係為一三維電場以及一二維電場之一。 其中該磁場 1 9·如申請專利範圍第1 5項所述之量測方法 係為一二維磁場以及一二維磁場之一。 其中該磁場 2 0 ·如申請專利範圍第1 5項所述之量測方法八,^ ^, 探針量測系統更包含一低通濾波器(1〇w pass niter, LPF ) ’係用以檢測出該磁場調變訊號之直流部分,該直 流部分即&為該待測物之磁場。 Η ·如μ申、清專利範圍第1 5項所述之量測方法,其中該磁場 〜十:^ J系、,先更包含一鎖相放大器(l〇din ampiifier )_係用以檢測出該磁場調變訊號之交流部分。 古木種用磁場探針量測系統測量一待測元件之電場之 方法,包含下列步驟: 固疋該探針, 並沿一方向移動垓待測元件做調變,量Page 22 577994 VI. Scope of patent application The probe performs modulation in a direction on the DUT, measures the magnetic field of the DUT, and generates a magnetic field modulation signal; detects the magnetic field modulation j signal The AC portion of the magnetic field modulation signal; and the AC portion of the magnetic field modulation signal to calculate the electric field of the DUT. 1 6 · The measurement method as described in item 5 of the scope of patent application, wherein the magnetic field probe measurement system is a magneto-optic probing system 〇 1 7 · As the scope of patent application The measurement method according to item 5, wherein the direction includes X, y, and z directions. The electric field 1 8 · The measurement method described in item 1g of the scope of patent application is one of a three-dimensional electric field and a two-dimensional electric field. The magnetic field 19. The measurement method described in item 15 of the scope of patent application is one of a two-dimensional magnetic field and a two-dimensional magnetic field. The magnetic field 20 is the measurement method described in item 15 of the scope of the patent application. The probe measurement system further includes a low-pass filter (10w pass niter, LPF). The DC part of the magnetic field modulation signal is detected, and the DC part is the magnetic field of the object to be measured. Η The measurement method described in item 15 of the patent application scope of μ and Qing patents, wherein the magnetic field is ~ 10: ^ J series, and first includes a phase-locked amplifier (10 din ampiifier) _ is used to detect The magnetic field modulates the AC portion of the signal. The method for measuring the electric field of a component under test using a magnetic field probe measurement system for ancient species includes the following steps: Fix the probe, and move the component under test to adjust the quantity 第23頁 577994 六、申請專利範圍 ,測該待測物之磁場,並產生一磁場調變訊號; 檢出該磁場調變訊號之交流部分;以及 利用該磁場調•變訊號之交流部分計算出該待測物 場。 义電 23·如申請專利範圍第22項所述之量測方法,其中該礤p 探針量測系統係為一磁光探針系統(megnet〇 —〇ptic句 probing system ) 〇 24·如申請專利範圍第22項所述之量測方法,其中該方 係包含X,y, ζ方向。 ° |5·如申請專利範闺第22項所述之量測方法,其中該電場 係為一三維電場以及一二維電場之一。 2 6 ·如申睛專利範圍第2 2項所述之量測方法,其中該磁場 係為一三維磁場以及一二維磁場之一。 2 7 ·如申清專利範圍第2 2項所述之量測方法,其中該磁場 探針量測系統更包含一低通濾波器(low pass filter, LPF ) ’係用以檢測出該磁場調變訊號之直流部分,該直 流部分即為該待測物之磁場。 2 8 ·如申請專利範圍第2 2項所述之量測方法,其中該磁場 針量測系統更包含一鎖相肌 ^ ’係用以檢測出該磁場調變訊號之交流名 amplifierPage 23 577994 6. Apply for a patent, measure the magnetic field of the DUT and generate a magnetic field modulation signal; detect the AC part of the magnetic field modulation signal; and use the AC part of the magnetic field modulation / change signal to calculate The object to be measured. Yidian 23. The measurement method as described in item 22 of the scope of patent application, wherein the 礤 p probe measurement system is a magneto-optical probe system (megnet〇—〇ptic sentence probing system) 〇24 · As applied The measurement method according to item 22 of the patent scope, wherein the square includes X, y, and ζ directions. ° | 5. The measurement method according to item 22 of the patent application, wherein the electric field is one of a three-dimensional electric field and a two-dimensional electric field. 2 6 · The measurement method as described in item 22 of the Shenjing patent scope, wherein the magnetic field is one of a three-dimensional magnetic field and a two-dimensional magnetic field. 2 7 · The measurement method as described in item 22 of the patent application scope, wherein the magnetic field probe measurement system further includes a low pass filter (LPF) 'for detecting the magnetic field modulation The DC part of the variable signal. The DC part is the magnetic field of the DUT. 2 8 · The measurement method described in item 22 of the scope of patent application, wherein the magnetic field needle measurement system further includes a phase-locked muscle ^ ′ is an AC name used to detect the magnetic field modulation signal 第24頁Page 24
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395250B (en) * 2004-02-10 2013-05-01 Panasonic Corp Beam measuring device, beam measuring method, beam control method and beam irradiation method
TWI509272B (en) * 2013-12-09 2015-11-21 Univ Nat Taiwan Magnetic field probe,magnetic field measurement system and magnetic field measurement method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395250B (en) * 2004-02-10 2013-05-01 Panasonic Corp Beam measuring device, beam measuring method, beam control method and beam irradiation method
TWI509272B (en) * 2013-12-09 2015-11-21 Univ Nat Taiwan Magnetic field probe,magnetic field measurement system and magnetic field measurement method
US9606198B2 (en) 2013-12-09 2017-03-28 National Taiwan University Magnetic field probe, magnetic field measurement system and magnetic field measurement method

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