CN208420681U - A kind of nanostructure magnetic measuring device - Google Patents
A kind of nanostructure magnetic measuring device Download PDFInfo
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- CN208420681U CN208420681U CN201820674547.3U CN201820674547U CN208420681U CN 208420681 U CN208420681 U CN 208420681U CN 201820674547 U CN201820674547 U CN 201820674547U CN 208420681 U CN208420681 U CN 208420681U
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Abstract
The utility model relates to physical measurement techniques fields, a kind of nanostructure magnetic measuring device, including laser, beam splitter, convex lens I, photodetector, lock-in amplifier, prism polarizers, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, wave plate I, lens platform, atomic force microscope, probe, sample, magnet, sample stage, signal generator, oscillograph, wave plate II, convex lens IV, plane mirror, sample, magnet and sample stage are sequentially located at immediately below probe, probe is truncated conical shape, the axis of through-hole I and through-hole II in probe are located at the two sides of probe rotary table axis, and with probe rotary table axis at 45 degree of angles, polarization maintaining optical fibre I has slow axis and fast axle, the axis of homology of prism polarizers is parallel with the slow axis of polarization maintaining optical fibre I, polarization maintaining optical fibre The slow axis of I is located between the horizontal magnetic axis and transverse electric axis of electrooptic modulator on the angular bisector of angle, and the horizontal magnetic axis of electrooptic modulator is parallel with the slow axis of polarization maintaining optical fibre II.
Description
Technical field
The utility model relates to physical measurement techniques field, it is especially a kind of using beam interference method come research material table
A kind of nanostructure magnetic measuring device of the single nanostructure magneto-optical kerr signal in face.
Background technique
Kerr magnetooptical effect measuring device is one of material surface magnetism research important means, its working principle is that base
Kerr magnetooptical effect caused by interaction, can not only carry out monoatomic layer thickness material between Yu Youguang and magnetized medium
Magnetic detection, and can realize non-contact measurement, the magnetic order of magnetic ultrathin film, magnetic anisotropy, layer coupling and
There is important application in the research of the transformation behavior of magnetic ultrathin film etc..Kerr magnetooptical effect measuring device mainly passes through
Detect the magnetization that light intensity variation caused by the polarization state after a branch of linearly polarized light reflects on the surface of the material changes carries out sample surfaces
Observation.Prior art defect one: traditional microscopical spatial resolution of focusing Ke Er determined by optical diffraction limit, at
The effect of picture is highly prone to optical element limitation, therefore is unable to get the magnetization behavioral characteristics of nanoscale.Prior art defect
Two: certain by measuring two-beam interfering in the method for magnetization information to obtain sample in sample surfaces, two-beam
Optical path is separately controlled, and needs to reconsolidate before detection, it is therefore desirable to more optical element, therefore obtain
The noise of signal is relatively low, prior art defect three:, can only in the device of the kerr rotation of the interferometry sample of the prior art
Pole is measured to Kerr effect, a kind of nanostructure magnetic measuring device can solve problem.
Utility model content
To solve the above-mentioned problems, the utility model using with light beam two orthogonal polarization components interference method come
The magnetization information of sample surfaces is obtained, two orthogonal polarization components of light share an optical path, reduce the optical element in optical path,
Improve signal-to-noise ratio, utility model device by using the light beam of oblique incidence can measure Kerr effect longitudinally, laterally and
Pole is to three components；In addition, utility model device uses the atomic force microscope probe with through-hole, sample table can be obtained
The magnetization behavioral characteristics of face nano-scale structures.
The technical scheme adopted by the utility model is
A kind of nanostructure magnetic measuring device mainly include laser, beam splitter, convex lens I, photodetector,
Lock-in amplifier, prism polarizers, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, wave plate
I, lens platform, atomic force microscope, probe, sample, magnet, sample stage, signal generator, oscillograph, wave plate II, convex lens
The wavelength of IV, plane mirror, laser are adjustable to 800 nanometer ranges at 400 nanometers, and xyz is rectangular coordinate system in space, x/y plane is
Horizontal plane, zx plane and horizontal plane, atomic force microscope are located at below lens platform, and probe is located under atomic force microscope
Side, the probe are atomic force microscope probe and are truncated conical shape, and the upper bottom surface diameter of the rotary table is 3 microns, bottom surface
Diameter is 1.5 microns, and the rotary table axis direction and horizontal plane, sample, magnet and sample stage are being sequentially located at probe just
Lower section, wave plate I are half-wave plate, and wave plate II is quarter wave plate, have through-hole I and through-hole II, the through-hole I, through-hole in the probe
The axis of II and the axis of probe rotary table are respectively positioned in zx plane, and the axis of the through-hole I and through-hole II are located at probe circle
Two sides of platform axis and with the probe rotary table axis at 45 degree of angles, photodetector and lock-in amplifier cable connection, letter
Number generator, oscillograph distinguish cable connection sample stage, and polarization maintaining optical fibre I has slow axis and fast axle, the axis of homology of prism polarizers
Parallel with the slow axis of polarization maintaining optical fibre I, the slow axis of polarization maintaining optical fibre I is located at angle between the horizontal magnetic axis and transverse electric axis of electrooptic modulator
On angular bisector, the horizontal magnetic axis of electrooptic modulator is parallel with the slow axis of polarization maintaining optical fibre II, through-hole I and through-hole II in the probe
Diameter be 200 nanometers, the polarization maintaining optical fibre I length be 2 meters, the polarization maintaining optical fibre II length be 9 meters.Laser issues
Light successively after beam splitter, prism polarizers, convex lens II, polarization maintaining optical fibre I, into electrooptic modulator, light is in electric light tune
It is to polarize outside in-plane polarization and face, and each component adds phase (t)=φ that two orthogonal polarized components are formed in device processed0Cos (ω t), the phase time difference of two light components are τ, and light beam enters polarization maintaining optical fibre II after coming out from electrooptic modulator, light
Two orthogonal polarized components are transmitted along the fast axle and slow axis of polarization maintaining optical fibre II respectively, after light leaves polarization maintaining optical fibre II, are successively led to
It crosses convex lens III, wave plate I, lens platform, atomic force microscope, through-hole I and reaches sample surfaces, and reflected for the first time, for the first time
Reflected light successively passes through through-hole II, atomic force microscope, lens platform, wave plate II, convex lens IV and reaches plane mirror, and second of quilt
Reflection, second of reflected light successively pass through convex lens IV, wave plate II, lens platform, atomic force microscope, through-hole II and reach sample table
Face, and third time is reflected by sample surfaces, third time reflected light successively passes through through-hole I, atomic force microscope, lens platform, wave plate
I, convex lens III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, then it is inclined by beam splitter
After turning, enter photodetector by convex lens I, two polarized components of third time reflected light occur dry at photodetector
It relates to, two orthogonal polarization components of the light transmitted respectively along the slow axis and fast axle of polarization maintaining optical fibre II, after polarization maintaining optical fibre II output
Corresponding Jones matrix is expressed asWithAfter wave plate I, two cross-polarizations of the light
The corresponding Jones matrix of component is changed intoWithWherein For phase angle, definitionTo indicate that light beam returns to Jones of electrooptic modulator whole process after two secondary reflections by sample surfaces
The phase meter of matrix, two orthogonal polarization components of light obtained in photodetector is shown as
Component of the phase difference in x, y, z direction is respectively αx、αy、αz,
Fourier analysis is carried out to photoelectric current obtained in photodetector, the single order that lock-in amplifier obtains photoelectric current is humorous
Wave component:
With the second harmonic component:
Consider symmetry, αKIt is reduced toWherein ω is the time dependent phase of electrooptic modulator
The angular frequency of φ (t), IincIt is the light intensity of the light of laser transmitting, γ is that light beam passes through following optical element beam splitter, rib twice
Mirror polarizer, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, convex lens IV, and by sample
Surface reflection twice after light intensity remaining proportion, J1And J2It is single order respectively and second order is Bessel equation, αKIt is sample magnetization component
Linear equation, the sample magnetization component m in x, y, z directionx、my、mzTo αKContribution depend on
Optical element etc. in the reflection coefficient of sample, optical path.
Pole corresponds to the component in the magnetized direction z to Kerr effect, and longitudinal Kerr effect corresponds to point in the magnetized direction y
Amount, transverse Kerr effect correspond to the component in the magnetized direction x, since sample magnetization component is under different Crystals in Symmetry operations
Transformation it is different, it should select suitable P1And P2And the optical element in optical path so that pole to or vertical or horizontal magneto-optic
The contribution of Kerr effect accounts for major part.
Utility model device uses the atomic force microscope probe with through-hole, can obtain sample surfaces nanoscale
The magnetization information of structure, secondly, the utility model is obtained using the method that two orthogonal polarization components with light beam are interfered
The magnetization information of sample surfaces, two polarized light components share an optical path, avoid light beam separation and collect again, can be opposite
Relatively easily guarantee that two light beams with same paths, and reduce the optical element in optical path so that signal less by
The moving influence of optical element, improves signal-to-noise ratio in sample and interferometric loop.
Utilize a kind of method that nanostructure magnetic measuring device measures are as follows:
The method for measuring longitudinal Kerr effect:
At 22.5 degree, the fast axle for adjusting wave plate II is consistent with the direction y for the fast axle of one, adjustment wave plate I and the direction y, so that
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to scan in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser, so that the laser beam that laser issues enters the through-hole I of probe, laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position, so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third time reflected lights successively pass through through-hole I, atomic force microscope, lens platform, the wave plate I, convex lens of probe
It is deflected after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers by beam splitter, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, at this
Under the conditions of, one order harmonic component of light intensity
Longitudinal kerr rotationrpAnd rsRespectively P-polarized light and S polarized light
In the reflectivity of sample surfaces；
Eight, are by formulaKerr rotation is calculated.
Pole is measured to Kerr effect method:
At 22.5 degree, the fast axle for adjusting wave plate II is consistent with the direction y for the fast axle of one, adjustment wave plate I and the direction y, so that
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to scan in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser, so that the laser beam that laser issues enters the through-hole I of probe, laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position, so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third time reflected lights successively pass through through-hole I, atomic force microscope, lens platform, the wave plate I, convex lens of probe
It is deflected after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers by beam splitter, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, at this
Under the conditions of, one order harmonic component of light intensity
Pole is to kerr rotationrpAnd rsRespectively P-polarized light and S polarized light
In the reflectivity of sample surfaces,
Eight, are by formulaKerr rotation is calculated.
Measure transverse Kerr effect method:
One, removes wave plate I, and the fast axle for adjusting wave plate II and the direction y are at 45 degree, so that after wave plate I, incident light
The corresponding Jones matrix of two orthogonal polarization components isWith
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to scan in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser, so that the laser beam that laser issues enters the through-hole I of probe, laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position, so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third time reflected lights successively pass through through-hole I, atomic force microscope, lens platform, the wave plate I, convex lens of probe
It is deflected after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers by beam splitter, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, at this
Under the conditions of, one order harmonic component of light intensityLateral kerr rotation
rpAnd rsThe respectively reflectivity of P-polarized light and S polarized light in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
The beneficial effects of the utility model are:
In the device of the kerr rotation of the interferometry sample of the prior art, the interferometric loop of optical path has certain area,
Utility model device replaces two independent light beams to carry out interference survey by two orthogonal polarized components of the same light beam
Amount, advantage is: relatively easy where guaranteeing that two light beams are passed with same optical path by avoiding light beam separation with collecting again
It broadcasts, so that signal is less by the moving influence of optical element in sample and interferometric loop.
Detailed description of the invention
It is further illustrated below with reference to the figure of the utility model:
Fig. 1 is utility model diagram.
In figure, 1. lasers, 2. beam splitters, 3. convex lens I, 4. photodetectors, 5. lock-in amplifiers, 6. prisms polarization
Device, 7. convex lens II, 8. polarization maintaining optical fibre I, 9. electrooptic modulators, 10. polarization maintaining optical fibre II, 11. convex lens III, 12. wave plate I,
13. lens platform, 14. atomic force microscope, 15. probes, 16. samples, 17. magnet, 18. sample stages, 19. signal generators, 20.
Oscillograph, 21. wave plate II, 22. convex lens IV, 23. plane mirrors.
Specific embodiment
If Fig. 1 is utility model diagram, the lower left corner has an xyz three-dimensional mark, xyz be rectangular coordinate system in space,
X/y plane is horizontal plane, zx plane and horizontal plane, and a kind of nanostructure magnetic measuring device mainly includes laser
1, beam splitter 2, convex lens I3, photodetector 4, lock-in amplifier 5, prism polarizers 6, convex lens II7, polarization maintaining optical fibre I8,
Electrooptic modulator 9, polarization maintaining optical fibre II10, convex lens III11, wave plate I12, lens platform 13, atomic force microscope 14, probe 15,
Sample 16, magnet 17, sample stage 18, signal generator 19, oscillograph 20, wave plate II21, convex lens IV22, plane mirror 23 swash
The wavelength of light device 1 is adjustable to 800 nanometer ranges at 400 nanometers, and atomic force microscope 14 is located at 13 lower section of lens platform, probe 15
Positioned at the lower section of atomic force microscope 14, the probe 15 is atomic force microscope probe and is truncated conical shape, the rotary table it is upper
Basal diameter is 3 microns, bottom surface diameter is 1.5 microns, the rotary table axis direction and horizontal plane, sample 16, magnet
17 and sample stage 18 be sequentially located at the underface of probe 15, wave plate I12 is half-wave plate, and wave plate II21 is quarter wave plate, the spy
Axis with through-hole I and through-hole 15 rotary table of II, the through-hole I, the axis of through-hole II and probe in needle 15 is respectively positioned on zx plane
It is interior, the axis of the through-hole I and through-hole II be located at the two sides of 15 rotary table axis of probe and with 15 round platform axis of probe
Line distinguishes cable connection at 45 degree of angles, photodetector 4 and 5 cable connection of lock-in amplifier, signal generator 19, oscillograph 20
Sample stage 18, polarization maintaining optical fibre I8 have slow axis and fast axle, and the axis of homology of prism polarizers 6 is parallel with the slow axis of polarization maintaining optical fibre I8,
The slow axis of polarization maintaining optical fibre I8 is located between the horizontal magnetic axis and transverse electric axis of electrooptic modulator 9 on the angular bisector of angle, Electro-optical Modulation
The horizontal magnetic axis of device 9 is parallel with the slow axis of polarization maintaining optical fibre II10, and the diameter of through-hole I and through-hole II in the probe 15 are 200
Nanometer, the polarization maintaining optical fibre I8 length are 2 meters, and 10 length of polarization maintaining optical fibre II is 9 meters.The light that laser 1 issues successively passes through
After crossing beam splitter 2, prism polarizers 6, convex lens II7, polarization maintaining optical fibre I8, into electrooptic modulator 9, light is in electrooptic modulator 9
It is middle to form two orthogonal polarized components to polarize outside in-plane polarization and face, and each component adds phase (t)=φ0cos
(ω t), the phase time difference of two light components are τ, and light beam enters polarization maintaining optical fibre II10 after coming out from electrooptic modulator 9, light
Two orthogonal polarized components are transmitted along the fast axle and slow axis of polarization maintaining optical fibre II10 respectively, after light leaves polarization maintaining optical fibre II10, according to
It is secondary that 16 surface of sample, and first are reached by convex lens III11, wave plate I12, lens platform 13, atomic force microscope 14, through-hole I
Secondary to be reflected, first reflection light successively passes through through-hole II, atomic force microscope 14, lens platform 13, wave plate II21, convex lens
IV22 reaches plane mirror 23, and second is reflected, and second of reflected light successively passes through convex lens IV22, wave plate II21, lens
Platform 13, atomic force microscope 14, through-hole II reach sample surfaces, and third time is by 16 surface reflection of sample, third time reflected light
Successively pass through through-hole I, atomic force microscope 14, lens platform 13, wave plate I12, convex lens III11, polarization maintaining optical fibre II10, electric light tune
Device 9 processed, polarization maintaining optical fibre I8, convex lens II7, prism polarizers 6, then after being deflected by beam splitter 2, enter photoelectricity by convex lens I3
Two polarized components of detector 4, third time reflected light interfere at photodetector 4, respectively along polarization maintaining optical fibre II10
Slow axis and fast axle transmission light two orthogonal polarization components, from corresponding Jones matrix difference after polarization maintaining optical fibre II10 output
It is expressed asWithAfter wave plate I12, the corresponding Jones's square of two orthogonal polarization components of the light
Battle array is changed intoWithWherein For phase angle, definitionFor
Indicate that light beam returns to the Jones matrix of the whole process of electrooptic modulator 9 after two secondary reflections by sample surfaces, photoelectricity is visited
The phase meter for surveying two orthogonal polarization components of light obtained in device 4 is shown as
Component of the phase difference in x, y, z direction is respectively αx、αy、αz,
Fourier analysis is carried out to photoelectric current obtained in photodetector 4, lock-in amplifier 5 obtains the single order of photoelectric current
Harmonic component:
With the second harmonic component:
Consider symmetry, αKIt is reduced toWherein ω is the time dependent phase of electrooptic modulator 9
The angular frequency of φ (t), IincBe laser transmitting light light intensity, γ be light beam pass through twice following optical element beam splitter 2,
Prism polarizers 6, convex lens II7, polarization maintaining optical fibre I8, electrooptic modulator 9, polarization maintaining optical fibre II10, convex lens III11, convex lens
IV22, and by 16 surface reflection of sample twice after light intensity remaining proportion, J1And J2It is single order respectively and second order is Bezier side
Journey, αKIt is the linear equation of sample magnetization component, the sample magnetization component m in x, y, z directionx、my、mzTo αKContribution depend onOptical element etc. in the reflection coefficient of sample, optical path.
Pole corresponds to the component in the magnetized direction z to Kerr effect, and longitudinal Kerr effect corresponds to point in the magnetized direction y
Amount, transverse Kerr effect correspond to the component in the magnetized direction x, since sample magnetization component is under different Crystals in Symmetry operations
Transformation it is different, it should select suitable P1And P2And the optical element in optical path so that pole to or vertical or horizontal magneto-optic
The contribution of Kerr effect accounts for major part.
Utility model device uses the atomic force microscope probe with through-hole, can obtain sample surfaces nanoscale
The magnetization information of structure, secondly, the utility model is obtained using the method that two orthogonal polarization components with light beam are interfered
The magnetization information of sample surfaces, two polarized light components share an optical path, avoid light beam separation and collect again, can be opposite
Relatively easily guarantee that two light beams with same paths, and reduce the optical element in optical path so that signal less by
The moving influence of optical element, improves signal-to-noise ratio in sample and interferometric loop, in addition, utility model device by using
The light beam of oblique incidence, can be realized without larger change is made to optical path in device in the case where, measure Kerr effect longitudinal direction,
Laterally and pole is to three components.
Claims (3)
1. a kind of nanostructure magnetic measuring device mainly includes laser, beam splitter, convex lens I, photodetector, locking phase
Amplifier, prism polarizers, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, wave plate I, thoroughly
Dressing table, probe, sample, magnet, sample stage, signal generator, oscillograph, wave plate II, convex lens IV, is put down at atomic force microscope
The wavelength of face mirror, laser is adjustable to 800 nanometer ranges at 400 nanometers, and xyz is rectangular coordinate system in space, x/y plane is horizontal
Face, zx plane and horizontal plane, atomic force microscope are located at below lens platform, and probe is located at below atomic force microscope, institute
It states probe to be atomic force microscope probe and be truncated conical shape, the upper bottom surface diameter of the rotary table is 3 microns, bottom surface diameter is
1.5 microns, the rotary table axis direction and horizontal plane, sample, magnet and sample stage are sequentially located at the underface of probe, wave
Piece I is half-wave plate, and wave plate II is quarter wave plate,
It is characterized in that: having through-hole I and through-hole II, the axis of the through-hole I, the axis of through-hole II and probe rotary table in the probe
Line is respectively positioned in zx plane, the axis of the through-hole I and through-hole II be located at the two sides of probe rotary table axis and with it is described
Probe rotary table axis distinguishes cable at 45 degree of angles, photodetector and lock-in amplifier cable connection, signal generator, oscillograph
Sample stage is connected, polarization maintaining optical fibre I has slow axis and fast axle, and the axis of homology of prism polarizers is parallel with the slow axis of polarization maintaining optical fibre I, protects
The slow axis of polarisation fibre I is located between the horizontal magnetic axis and transverse electric axis of electrooptic modulator on the angular bisector of angle, electrooptic modulator
Horizontal magnetic axis is parallel with the slow axis of polarization maintaining optical fibre II.
2. a kind of nanostructure magnetic measuring device according to claim 1, it is characterized in that: the through-hole I in the probe
Diameter with through-hole II is 200 nanometers.
3. a kind of nanostructure magnetic measuring device according to claim 1, it is characterized in that: the polarization maintaining optical fibre I length
It is 2 meters, the polarization maintaining optical fibre II length is 9 meters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820674547.3U CN208420681U (en) | 2018-04-24 | 2018-04-24 | A kind of nanostructure magnetic measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820674547.3U CN208420681U (en) | 2018-04-24 | 2018-04-24 | A kind of nanostructure magnetic measuring device |
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| Publication Number | Publication Date |
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| CN208420681U true CN208420681U (en) | 2019-01-22 |
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|---|---|---|---|
| CN201820674547.3U Expired - Fee Related CN208420681U (en) | 2018-04-24 | 2018-04-24 | A kind of nanostructure magnetic measuring device |
Country Status (1)
| Country | Link |
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2018
- 2018-04-24 CN CN201820674547.3U patent/CN208420681U/en not_active Expired - Fee Related
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