CN108414452A - A kind of nanostructure magnetic measuring device - Google Patents
A kind of nanostructure magnetic measuring device Download PDFInfo
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- CN108414452A CN108414452A CN201810429274.0A CN201810429274A CN108414452A CN 108414452 A CN108414452 A CN 108414452A CN 201810429274 A CN201810429274 A CN 201810429274A CN 108414452 A CN108414452 A CN 108414452A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/218—Measuring properties of electrooptical or magnetooptical media
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/067—Electro-optic, magneto-optic, acousto-optic elements
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Abstract
The present invention relates to physical measurement techniques fields,A kind of nanostructure magnetic measuring device,Including laser,Beam splitter,Convex lens I,Photodetector,Lock-in amplifier,Prism polarizers,Convex lens II,Polarization maintaining optical fibre I,Electrooptic modulator,Polarization maintaining optical fibre II,Convex lens III,Wave plate I,Lens platform,Atomic force microscope,Probe,Sample,Magnet,Sample stage,Signal generator,Oscillograph,Wave plate II,Convex lens IV,Plane mirror,Sample,Magnet and sample stage are sequentially located at immediately below probe,Probe is truncated conical shape,The axis of through-hole I and through-hole II in probe are located at the both sides of probe round platform axis,And with probe round platform axis at 45 degree of angles,Polarization maintaining optical fibre I has slow axis and fast axle,The axis of homology of prism polarizers is parallel with the slow axis of polarization maintaining optical fibre I,The slow axis of polarization maintaining optical fibre I is located between the horizontal magnetic axis and transverse electric axis of electrooptic modulator on the angular bisector of angle,The horizontal magnetic axis of electrooptic modulator is parallel with the slow axis of polarization maintaining optical fibre II.
Description
Technical field
It is especially a kind of single come research material surface using beam interference method the present invention relates to physical measurement techniques field
A kind of nanostructure magnetic measuring device of a nanostructure magneto-optical kerr signal.
Background technology
Kerr magnetooptical effect measuring device is a kind of important means in material surface magnetism research, and operation principle is base
Kerr magnetooptical effect caused by interaction, can not only carry out monoatomic layer thickness material between Yu Youguang and magnetized medium
Magnetic detection, and can realize non-contact measurement, the magnetic order of magnetic ultrathin film, magnetic anisotropy, layer coupling and
There is important application in the research of the transformation behavior of magnetic ultrathin film etc..Kerr magnetooptical effect measuring device mainly passes through
Detect the magnetization that light intensity variation caused by polarization state variation of a branch of linearly polarized light after material surface reflection carries out sample surfaces
Observation.Prior art defect one：Traditional microscopical spatial resolutions of focusing Ke Er are determined by optical diffraction limit, at
The effect of picture is highly prone to optical element limitation, therefore is unable to get the magnetization behavioral characteristics of nanoscale.Prior art defect
Two：Certain by measuring in the method for magnetization information of interference of the two-beam in sample surfaces to obtain sample, two-beam
Light path is separately controlled, and needs to reconsolidate before detection, it is therefore desirable to more optical element, therefore obtain
The noise of signal is relatively low, prior art defect three：It, can only in the device of the kerr rotation of the interferometry sample of the prior art
Pole is measured to Kerr effect, a kind of nanostructure magnetic measuring device can solve the problems, such as.
Invention content
To solve the above-mentioned problems, the present invention is obtained using the method for two orthogonal polarization components interference with light beam
Two orthogonal polarization components of the magnetization information of sample surfaces, light share a light path, reduce the optical element in light path, improve
Signal-to-noise ratio, apparatus of the present invention by using the light beam of oblique incidence can measure Kerr effect longitudinally, laterally with pole to three
Component；In addition, apparatus of the present invention use the atomic force microscope probe with through-hole, sample surfaces nanoscale knot can be obtained
The magnetization behavioral characteristics of structure.
The technical solution adopted in the present invention is：
A kind of nanostructure magnetic measuring device mainly include laser, beam splitter, convex lens I, photodetector,
Lock-in amplifier, prism polarizers, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, wave plate
I, lens platform, atomic force microscope, probe, sample, magnet, sample stage, signal generator, oscillograph, wave plate II, convex lens
The wavelength of IV, plane mirror, laser is adjustable to 800 nanometer ranges at 400 nanometers, and xyz is rectangular coordinate system in space, x/y plane is
Horizontal plane, zx planes and horizontal plane, atomic force microscope are located at below lens platform, and probe is located under atomic force microscope
Side, the probe is atomic force microscope probe and is truncated conical shape, and the upper bottom surface of the round platform is 3 microns a diameter of, bottom surface
A diameter of 1.5 microns, the round platform axis direction and horizontal plane, sample, magnet and sample stage are being sequentially located at probe just
Lower section, wave plate I are half-wave plate, and wave plate II is quarter wave plate, has through-hole I and through-hole II, the through-hole I, through-hole in the probe
The axis of II and the axis of probe round platform are respectively positioned in zx planes, and the axis of the through-hole I and through-hole II are located at probe circle
Both sides of platform axis and with the probe round platform axis at 45 degree of angles, photodetector and lock-in amplifier cable connection, letter
Number generator, oscillograph distinguish cable connection sample stage, and polarization maintaining optical fibre I has slow axis and fast axle, the axis of homology of prism polarizers
Parallel with the slow axis of polarization maintaining optical fibre I, the slow axis of polarization maintaining optical fibre I is located at angle between the horizontal magnetic axis and transverse electric axis of electrooptic modulator
On angular bisector, the horizontal magnetic axis of electrooptic modulator is parallel with the slow axis of polarization maintaining optical fibre II, the through-hole I in the probe and through-hole II
Diameter be 200 nanometers, the polarization maintaining optical fibre I length be 2 meters, the polarization maintaining optical fibre II length be 9 meters.Laser is sent out
Light successively after beam splitter, prism polarizers, convex lens II, polarization maintaining optical fibre I, into electrooptic modulator, light is in electric light tune
It is to be polarized outside in-plane polarization knead dough, and each component adds phase (t)=φ that two orthogonal polarized components are formed in device processed0The phase time difference of cos (ω t), two light components are τ, and light beam enters polarization maintaining optical fibre II after being come out from electrooptic modulator, light
Two orthogonal polarized components are transmitted along the fast axle and slow axis of polarization maintaining optical fibre II respectively, after light leaves polarization maintaining optical fibre II, are led to successively
It crosses convex lens III, wave plate I, lens platform, atomic force microscope, through-hole I and reaches sample surfaces, and reflected for the first time, for the first time
Reflected light passes through through-hole II, atomic force microscope, lens platform, wave plate II, convex lens IV and reaches plane mirror, and second of quilt successively
Reflection, second of reflected light pass through convex lens IV, wave plate II, lens platform, atomic force microscope, through-hole II and reach sample table successively
Face, and third time is reflected by sample surfaces, third time reflected light passes through through-hole I, atomic force microscope, lens platform, wave plate successively
I, convex lens III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, then it is inclined by beam splitter
After turning, enter photodetector by convex lens I, two polarized components of third time reflected light occur to do at photodetector
It relates to, respectively along two orthogonal polarization components of the light of the slow axis and fast axle of polarization maintaining optical fibre II transmission, after polarization maintaining optical fibre II outputs
Corresponding Jones matrix is expressed asWithAfter wave plate I, two cross-polarizations of the light
The corresponding Jones matrix of component is changed intoWithWherein For phase angle, definitionTo indicate that light beam returns to Jones of electrooptic modulator whole process after two secondary reflections by sample surfaces
The phase meter of matrix, two orthogonal polarization components of the light obtained in photodetector is shown asPhase difference exists
The component in x, y, z direction is respectively αx、αy、αz, Fourier analysis is carried out to the photoelectric current obtained in photodetector, locking phase is put
Big device obtains an order harmonic component of photoelectric current：
With the second harmonic component：It examines
Consider symmetry, αkIt is reduced toWherein ω is the angular frequency of the time dependent phase (t) of electrooptic modulator
Rate, IincIt is the light intensity of the light of laser transmitting, γ is that light beam passes through following optical element beam splitter, prism polarizers, convex twice
Lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, convex lens IV, and reflect two by sample surfaces
The remaining proportion of light intensity, J after secondary1And J2It is single order respectively and second order is Bessel equation, αkIt is the linear side of sample magnetization component
Journey, the sample magnetization component m in x, y, z directionx、my、mzTo αkContribution depend on Sample
Optical element etc. in reflectance factor, light path.
Pole corresponds to the component in the magnetized directions z to Kerr effect, and longitudinal Kerr effect corresponds to point in the magnetized directions y
Amount, transverse Kerr effect correspond to the component in the magnetized directions x, since sample magnetization component is under different Crystals in Symmetry operations
Transformation it is different, it should select suitable P1And P2And the optical element in light path so that pole to or vertical or horizontal magneto-optic
The contribution of Kerr effect accounts for major part.
Apparatus of the present invention use the atomic force microscope probe with through-hole, can obtain sample surfaces nano-scale structures
Magnetization information, secondly, the present invention obtains sample surfaces using the method for two orthogonal polarization components interference with light beam
Magnetization information, two polarized light components share a light path, avoid light beam separation and collect again, can be relatively easy where
Ensure that two light beams with same paths, and reduce the optical element in light path so that signal less by sample and
The moving influence of optical element, improves signal-to-noise ratio in interferometric loop.
It is using a kind of method that nanostructure magnetic measuring device measures：
The method for measuring longitudinal Kerr effect：
For the fast axle of one, adjustment wave plates I with the directions y at 22.5 degree, the fast axle of adjustment wave plate II is consistent with the directions y so that
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to be scanned in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope, lens platform, wave plate I, the convex lens of probe successively
It is deflected by beam splitter after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, at this
Under the conditions of, one order harmonic component of light intensityLongitudinal kerr rotation
rpAnd rsThe respectively reflectivity of P polarization light and S-polarization light in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
Pole is measured to Kerr effect method：
For the fast axle of one, adjustment wave plates I with the directions y at 22.5 degree, the fast axle of adjustment wave plate II is consistent with the directions y so that
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to be scanned in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope, lens platform, wave plate I, the convex lens of probe successively
It is deflected by beam splitter after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, at this
Under the conditions of, one order harmonic component of light intensityPole is to kerr rotationrpAnd rsRespectively P polarization light and S-polarization light sample surfaces reflectivity,
Eight, are by formulaKerr rotation is calculated.
Measure transverse Kerr effect method：
One, removes wave plate I, and the fast axle of adjustment wave plate II is with the directions y at 45 degree so that after wave plate I, incident light
The corresponding Jones matrix of two orthogonal polarization components isWith
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to be scanned in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope, lens platform, wave plate I, the convex lens of probe successively
It is deflected by beam splitter after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, at this
Under the conditions of, one order harmonic component of light intensityLateral kerr rotation
rpAnd rsThe respectively reflectivity of P polarization light and S-polarization light in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
The beneficial effects of the invention are as follows：
In the device of the kerr rotation of the interferometry sample of the prior art, the interferometric loop of light path has certain area,
Apparatus of the present invention carry out interferometry by two orthogonal polarized components of the same light beam instead of two independent light beams, excellent
Putting is：Relatively easy where ensure that two light beams with same paths, make by avoiding light beam separation with collecting again
Signal less in by sample and interferometric loop optical element moving influence.
Description of the drawings
It is further illustrated with reference to the figure of the present invention：
Fig. 1 is schematic diagram of the present invention.
In figure, 1. lasers, 2. beam splitters, 3. convex lens I, 4. photodetectors, 5. lock-in amplifiers, 6. prisms polarization
Device, 7. convex lens II, 8. polarization maintaining optical fibre I, 9. electrooptic modulators, 10. polarization maintaining optical fibre II, 11. convex lens III, 12. wave plate I,
13. lens platform, 14. atomic force microscope, 15. probes, 16. samples, 17. magnet, 18. sample stages, 19. signal generators, 20.
Oscillograph, 21. wave plate II, 22. convex lens IV, 23. plane mirrors.
Specific implementation mode
If Fig. 1 is schematic diagram of the present invention, the lower left corner has xyz three-dimensional marks, and xyz is rectangular coordinate system in space, xy is flat
Face is horizontal plane, zx planes and horizontal plane, a kind of nanostructure magnetic measuring device include mainly laser 1, point
Beam device 2, convex lens I 3, photodetector 4, lock-in amplifier 5, prism polarizers 6, convex lens II 7, polarization maintaining optical fibre I 8, electricity
Optical modulator 9, polarization maintaining optical fibre II 10, convex lens III11, wave plate I 12, lens platform 13, atomic force microscope 14, probe 15,
Sample 16, magnet 17, sample stage 18, signal generator 19, oscillograph 20, wave plate II21, convex lens IV22, plane mirror 23 swash
The wavelength of light device 1 is adjustable to 800 nanometer ranges at 400 nanometers, and atomic force microscope 14 is located at 13 lower section of lens platform, probe 15
Positioned at the lower section of atomic force microscope 14, the probe 15 is atomic force microscope probe and is truncated conical shape, the round platform it is upper
Basal diameter is 3 microns, a diameter of 1.5 microns of bottom surface, the round platform axis direction and horizontal plane, sample 16, magnet
17 and sample stage 18 be sequentially located at the underface of probe 15, wave plate I 12 is half-wave plate, and wave plate II21 is quarter wave plate, the spy
Axis with through-hole I and through-hole 15 round platform of II, the through-hole I, the axis of through-hole II and probe in needle 15 is respectively positioned on zx planes
It is interior, the axis of the through-hole I and through-hole II be located at the both sides of 15 round platform axis of probe and with 15 round platform axis of the probe
Line is distinguished cable and is connected at 45 degree of angles, photodetector 4 and 5 cable connection of lock-in amplifier, signal generator 19, oscillograph 20
Sample stage 18 is connect, polarization maintaining optical fibre I 8 has slow axis and fast axle, the axis of homology of prism polarizers 6 flat with the slow axis of polarization maintaining optical fibre I 8
Row, the slow axis of polarization maintaining optical fibre I 8 are located between the horizontal magnetic axis and transverse electric axis of electrooptic modulator 9 on the angular bisector of angle, electric light
The horizontal magnetic axis of modulator 9 is parallel with the slow axis of polarization maintaining optical fibre II 10, and the diameter of through-hole I and through-hole II in the probe 15 are equal
It it is 200 nanometers, 8 length of polarization maintaining optical fibre I is 2 meters, and 10 length of polarization maintaining optical fibre II is 9 meters.The light that laser 1 is sent out
Successively after beam splitter 2, prism polarizers 6, convex lens II7, polarization maintaining optical fibre I 8, into electrooptic modulator 9, light is in electric light
Formed in modulator 9 two orthogonal polarized components be polarized outside in-plane polarization knead dough, and each component plus phase (t)=
φ0The phase time difference of cos (ω t), two light components are τ, and light beam enters polarization maintaining optical fibre II after being come out from electrooptic modulator 9
10, two orthogonal polarized components of light are transmitted along the fast axle and slow axis of polarization maintaining optical fibre II 10 respectively, and light leaves polarization maintaining optical fibre II
After 10, passes sequentially through convex lens III11, wave plate I 12, lens platform 13, atomic force microscope 14, through-hole I and reach 16 table of sample
Face, and reflected for the first time, first reflection light passes through through-hole II, atomic force microscope 14, lens platform 13, wave plate II successively
21, convex lens IV22 reaches plane mirror 23, and second is reflected, and second of reflected light passes through convex lens IV22, wave plate successively
II 21, lens platform 13, atomic force microscope 14, through-hole II reach sample surfaces, and third time is by 16 surface reflection of sample, the
Triple reflection light passes through through-hole I, atomic force microscope 14, lens platform 13, wave plate I 12, convex lens III11, polarization maintaining optical fibre successively
II 10, electrooptic modulator 9, polarization maintaining optical fibre I 8, convex lens II7, prism polarizers 6, then by beam splitter 2 deflect after, through excess convexity
Lens I 3 enters photodetector 4, and two polarized components of third time reflected light interfere at photodetector 4, respectively
Two orthogonal polarization components of the light transmitted along the slow axis and fast axle of polarization maintaining optical fibre II 10 are right after the outputs of polarization maintaining optical fibre II 10
The Jones matrix answered is expressed asWithAfter wave plate I 12, two of the light are orthogonal inclined
The corresponding Jones matrix of the component that shakes is changed intoWithWherein It is fixed for phase angle
JusticeTo indicate that light beam returns to the whole process of electrooptic modulator 9 after two secondary reflections by sample surfaces
Jones matrix, the phase meter of two orthogonal polarization components of the light obtained in photodetector 4 is shown asPhase difference exists
The component in x, y, z direction is respectively αx、αy、αz, Fourier analysis is carried out to the photoelectric current obtained in photodetector 4, locking phase is put
Big device 5 obtains an order harmonic component of photoelectric current：
With the second harmonic component：It examines
Consider symmetry, αkIt is reduced toWherein ω is the angle of the time dependent phase (t) of electrooptic modulator 9
Frequency, IincIt is the light intensity of the light of laser transmitting, γ is that light beam passes through following optical element beam splitter 2, prism polarizers twice
6, convex lens II 7, polarization maintaining optical fibre I 8, electrooptic modulator 9, polarization maintaining optical fibre II 10, convex lens III11, convex lens IV22, and
By 16 surface reflection of sample twice after light intensity remaining proportion, J1And J2It is single order respectively and second order is Bessel equation, αkIt is sample
The linear equation of product magnetization component, the sample magnetization component m in x, y, z directionx、my、mzTo αkContribution depend onOptical element etc. in the reflectance factor of sample, light path.
Pole corresponds to the component in the magnetized directions z to Kerr effect, and longitudinal Kerr effect corresponds to point in the magnetized directions y
Amount, transverse Kerr effect correspond to the component in the magnetized directions x, since sample magnetization component is under different Crystals in Symmetry operations
Transformation it is different, it should select suitable P1And P2And the optical element in light path so that pole to or vertical or horizontal magneto-optic
The contribution of Kerr effect accounts for major part.
Apparatus of the present invention use the atomic force microscope probe with through-hole, can obtain sample surfaces nano-scale structures
Magnetization information, secondly, the present invention obtains sample surfaces using the method for two orthogonal polarization components interference with light beam
Magnetization information, two polarized light components share a light path, avoid light beam separation and collect again, can be relatively easy where
Ensure that two light beams with same paths, and reduce the optical element in light path so that signal less by sample and
The moving influence of optical element, improves signal-to-noise ratio in interferometric loop, in addition, light of the apparatus of the present invention by using oblique incidence
Beam can realize in the case where light path makes larger change in without to device, measure Kerr effect longitudinally, laterally with pole to
Three components.
Claims (3)
1. a kind of nanostructure magnetic measuring device includes mainly laser, beam splitter, convex lens I, photodetector, locking phase
Amplifier, prism polarizers, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, wave plate I, thoroughly
Dressing table, probe, sample, magnet, sample stage, signal generator, oscillograph, wave plate II, convex lens IV, is put down at atomic force microscope
The wavelength of face mirror, laser is adjustable to 800 nanometer ranges at 400 nanometers, and xyz is rectangular coordinate system in space, x/y plane is horizontal
Face, zx planes and horizontal plane, atomic force microscope are located at below lens platform, and probe is located at below atomic force microscope, institute
It states probe to be atomic force microscope probe and be truncated conical shape, the upper bottom surface of the round platform is 3 microns a diameter of, bottom surface is a diameter of
1.5 microns, the round platform axis direction and horizontal plane, sample, magnet and sample stage are sequentially located at the underface of probe, wave
Piece I is half-wave plate, and wave plate II is quarter wave plate,
It is characterized in that：Axis with through-hole I and through-hole II, the through-hole I, the axis and probe round platform of through-hole II in the probe
Line is respectively positioned in zx planes, the axis of the through-hole I and through-hole II be located at the both sides of probe round platform axis and with it is described
Probe round platform axis distinguishes cable at 45 degree of angles, photodetector and lock-in amplifier cable connection, signal generator, oscillograph
Sample stage is connected, polarization maintaining optical fibre I has slow axis and fast axle, and the axis of homology of prism polarizers is parallel with the slow axis of polarization maintaining optical fibre I, protects
The slow axis of polarisation fibre I is located between the horizontal magnetic axis and transverse electric axis of electrooptic modulator on the angular bisector of angle, electrooptic modulator
Horizontal magnetic axis is parallel with the slow axis of polarization maintaining optical fibre II.
2. a kind of nanostructure magnetic measuring device according to claim 1, it is characterized in that：Through-hole I in the probe
Diameter with through-hole II is 200 nanometers.
3. a kind of nanostructure magnetic measuring device according to claim 1, it is characterized in that：The polarization maintaining optical fibre I length
It it is 2 meters, the polarization maintaining optical fibre II length is 9 meters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810429274.0A CN108414452A (en) | 2018-04-24 | 2018-04-24 | A kind of nanostructure magnetic measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810429274.0A CN108414452A (en) | 2018-04-24 | 2018-04-24 | A kind of nanostructure magnetic measuring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108414452A true CN108414452A (en) | 2018-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810429274.0A Withdrawn CN108414452A (en) | 2018-04-24 | 2018-04-24 | A kind of nanostructure magnetic measuring device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116500523A (en) * | 2023-06-21 | 2023-07-28 | 赫智科技(苏州)有限公司 | Mode switching device for magneto-optical Kerr measurement and magneto-optical Kerr measurement device |
-
2018
- 2018-04-24 CN CN201810429274.0A patent/CN108414452A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116500523A (en) * | 2023-06-21 | 2023-07-28 | 赫智科技(苏州)有限公司 | Mode switching device for magneto-optical Kerr measurement and magneto-optical Kerr measurement device |
| CN116500523B (en) * | 2023-06-21 | 2023-10-20 | 赫智科技(苏州)有限公司 | Mode switching device for magneto-optical Kerr measurement and magneto-optical Kerr measurement device |
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Application publication date: 20180817 |