574741 A7 B7 五、發明説明（） 發明領域： (請先閲讀背面之注意事項再填寫本頁) 本發明係有關於一種步進光罩（Stepping Reticle)之檢 測圖案及檢測方法，特別是有關於一種U型框（U-Frame) 光罩之檢測圖案及檢測方法。 發明背景： 在半導體製程技術不斷地追求突破的同時，高構裝密 度、線寬尺寸微小化、低成本為眾所企望的目標，而達成 這些目標的關鍵步驟，首推製程中被公認為最具挑戰性、 難度也最高的微影技術。隨著微影技術日新月異的發展， 雖然新機台、新材料、新製程不斷推陳出新。但為因應可 攜式電子元件日益提升的需求量，以及電子產品不斷朝輕 薄短小的趨勢發展，使得微影技術的發展面臨愈來愈嚴苛 的挑戰。在可預見之未來，符合摩爾定理（Moore’s Law)之 預測，即每一晶片上電晶體數目每1 8個月增加二倍，或每 三年增加四倍，之可能性將愈趨微小。 經濟部智慧財產局員工消費合作社印製 微影技術在半導體製程中具有關鍵性之影響，微影技 術之良窳決定了元件之品質、良率、以及成本。微影技術 發展至今，目前的主流為光學微影技術以及電子束微影技 術等。針對上述之微影技術而言，大多數半導體廠的主力 機台有步進-重複機（SteP-and_Repeat)以及步進，掃描機 (Step-and-Scan)二種，其中步進-重複機簡稱步進機 (Stepper) ’而步進-掃描機則簡稱掃描機（Scanner)。 運用步進機或知描機進行微影製程時，利用4倍、5 本紙張尺度適用中國國家標準(CNS)A4規格(2丨0><297公釐) 574741 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 倍、或1 0倍等的光罩’以相對之比例縮小4倍、5倍、或 1 0倍等之步進機’將光罩上之圖案予以縮小。並以步進的 方式在晶圓上形成1個個的照射景域（ExP〇sure Field)，或 稱照射射域（Exposure Shot)，逐步地完成每一晶片所需之 曝光步驟。 當利用步進式的機台進行第一層材料層的微影製程 時，若機台的程式產生錯誤，或輸入的步進尺寸不正確， 顯影後之轉移圖案將會有偏移現象產生，而導致圖案轉移 失敗。然而’由於第一層材料層底下並無其他層形狀可依 據，因此一旦轉移圖案產生偏移’將難以直接憑藉目視而 得知，更無法獲知轉移圖案的偏移量。 當第一層材料層之圖案轉移產生錯誤，卻又沒有即時 察覺錯誤的發生’而讓整個製程持續進行，到最後不但會 降低製程的可靠度，並影響元件的品質，嚴重的話甚至會 導致製成的成品無法使用’而影響製程良率。 發明目的及概述： 鑒於上述習知進行第一層材料層之微影製程時，無法 提供有效的方法來檢查轉移圖案是否準確落在所需位置， 更無法獲知轉移圖案的偏移量。因此，無法即時捕捉到微 影製程的錯誤，而降低良率。 本發明之主要目的之一為提供一種U型框光罩之檢測 圖案，其係由一對圖案所構成，其中此檢測圖案的第—組 圖案係配置在U型框佈局之右下端’而第二組圖案貝彳酉己置 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公楚) '"""— ........... ......卜：」·——裝.........訂.........線 (請先閲讀背面之注意事項再場寫本頁) 經濟部智慧財產局員工消費合作社印製 574741 A7 -------_____ 五、發明說明（） 在u型框佈局之左上端。在進行完步進式曝光，並經顯影 後可直接檢查第一 u型框轉移圖案之右下端的第一組圖 案與第二U型框轉移圖案之左上端的第二組圖案接合所形 成之接合圖案。從接合圖案即可輕易看出轉移圖案是否有 偏移現象，並獲得轉移圖案的偏移量。 本發明之另一目的為提供一種利用u型框光罩之檢測 圖案來進行轉移圖案之檢測的方法0透過特別設計，且分 別植佈在U型框光罩之U型框的左上端以及右下端的一對 檢測圖案。在以此u型框光罩進行曝光以及顯影後，將分 另J位於不同u型框轉移圖案且構成一對之接合圖案，與原 先之檢測圖案進行比對。整個檢測流程相當簡單，且不須 運用到額外的裝置，亦不會增加製程的複雜度，即可獲得 良好的檢測結果。 本發明之再一目的就是因為本發明所提供之U型框光 罩之檢測圖案及檢測方法，可即時檢測出第一層材料層之 圖案轉移的情形。並可馬上根據檢測結果判斷是否須進行 機台程式以及步進尺寸的修正。因此，可提高製程的可靠 度’ k升產品品質’並改善製程良率。 根據以上所述之目的，本發明更提供了一種U型框光 罩之檢測圖案，其係植佈在U型框光罩之U型框佈局上， 且此ϋ型框光罩之檢測圖案至少包括：一第一組圖案至少 包括一第一圖案、複數個第二圖案、以及一第三圖案，且 這些第二圖案以第一圖案為中心，並以一第一預設距離平 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐) · -- ......-«.....裝.........訂.........線 (請先閱讀背面之注意事項再填寫本頁) 574741 經濟部智慧財產局員工消費合作社印製 A 7 B7 五、發明說明（） 均分佈在第一圖案的兩側，而第三圖案為一階梯狀圖案， 〃中此階梯狀圖案至少包括複數個階梯，且這些階梯位於 同一直線上，而每一相鄰之階梯之間具有一第二預設距 離，第二組圖案至少包括一第四圖案、複數個第五圖案、 以及複數個第六圖案，且這些第五圖案以第四圖案為中 心，並以一第三預設距離平均分佈在第四圖案的兩側，其 中第一圖案之寬度、第二圖案之寬度、第四圖案之寬度、 、及第五圖案之寬度皆相同，且每一相鄰之第六圖案之間 具有一第四預設距離。運用上述之ϋ型框光罩進行步進式 曝光並經顯影後，在正常情況下，第一組圖案之第一圖 案與第二組圖案之第四圖案可正好接合成一直線，且第一 組圖案之第三圖案的底部可正好與第二組圖案之第六圖案 的頂端接合。 根據以上所述之目的，本發明更提供了一種υ型框光 罩之檢測圖案，其係植佈在υ型框光罩之υ型框佈局上， 且此U型框光罩之檢測圖案至少包括：一第一組圖案至少 包括一第一圖案以及一第二圖案；以及一第二組圖案至少 I括第二圖案以及一第四圖案，其中第一組圖案之第二 圖案與第二組圖案之第四圖案構成一第一方形框圖案，且 第組圖案之第一圖案與第二組圖案之第三圖案構成一第 二方形框圖案。運用上述之U型框光罩進行步進式曝光， 並經顯影後，在正常情況下，第一組圖案之第一圖案與第 二組圖案之第三圖案可正好接合成第二方形框圖案，而第 6 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) ......":」.....裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁} 574741 A7574741 A7 B7 V. Description of the invention () Field of the invention: (Please read the precautions on the back before filling out this page) The present invention relates to a detection pattern and detection method for a stepping reticle, especially related to A detection pattern and a detection method for a U-Frame photomask. Background of the Invention: While the semiconductor process technology is constantly pursuing breakthroughs, high packaging density, miniaturization of line width dimensions, and low cost are the desired goals. The key steps to achieve these goals are recognized as the most important in the first-line process. The most challenging and difficult lithography technology. With the rapid development of lithography technology, new machines, new materials and new processes are constantly being introduced. However, in response to the increasing demand for portable electronic components, and the continuous development of electronic products toward the trend of thinness and shortness, the development of lithography technology is facing increasingly severe challenges. In the foreseeable future, it is in line with Moore ’s Law ’s prediction that the number of transistors on each chip will double every 18 months, or quadruple every three years, and the probability will become smaller. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Lithography technology has a key influence in the semiconductor manufacturing process. The quality of lithography technology determines the quality, yield and cost of components. Since the development of lithography technology, the current mainstream is optical lithography technology and electron beam lithography technology. For the above-mentioned lithography technology, the main machines of most semiconductor factories include step-and-repeat and step-and-scan. Among them, step-and-scan Stepper is referred to as stepper 'and step-scanner is referred to as scanner. When using a stepper or tracing machine for the lithography process, 4 times and 5 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0 > < 297 mm) 574741 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative prints A7 B7 V. Description of the invention () A photomask with a magnification of "10" or "10 times" is used to reduce the relative proportion of the stepper by 4x, 5x, or 10x. Zoom out. Then, one exposure field (Exposure Field), or Exposure Shot, is formed on the wafer in a stepwise manner, and the exposure steps required for each wafer are gradually completed. When a stepping machine is used for the lithography process of the first material layer, if the program of the machine generates an error or the step size is incorrectly entered, the transfer pattern after development will have a shift phenomenon. As a result, the pattern transfer fails. However, 'because there is no other layer shape under the first material layer, once the transfer pattern is shifted', it will be difficult to know directly by visual inspection, and it is impossible to know the shift amount of the transfer pattern. When the pattern transfer of the first material layer generates an error without realizing the occurrence of the error, the entire process will continue. In the end, it will not only reduce the reliability of the process, but also affect the quality of the components. The finished product cannot be used, which affects the process yield. SUMMARY OF THE INVENTION In view of the foregoing, when performing the lithography process of the first material layer in the above-mentioned conventional method, it is impossible to provide an effective method to check whether the transfer pattern accurately falls at a desired position, and it is impossible to know the shift amount of the transfer pattern. Therefore, errors in the lithography process cannot be captured in real time, and the yield is reduced. One of the main objects of the present invention is to provide a detection pattern of a U-shaped frame mask, which is composed of a pair of patterns, wherein the first group of patterns of the detection pattern is arranged at the lower right end of the U-shaped frame layout. The second set of patterns is designed to fit the Chinese National Standard (CNS) A4 specification (210X 297). '&Quot; " "-........... ... ... Bu ： ”· ——Install ......... Order ......... line (please read the precautions on the back before writing this page) Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the Consumer Cooperative 574741 A7 -------_____ V. Description of the invention () The upper left end of the u-shaped frame layout. After performing stepwise exposure, and after development, the first set of patterns at the lower right end of the first U-shaped frame transfer pattern and the second set of patterns at the upper left end of the second U-shaped frame transfer pattern can be directly inspected and formed. Of the bonding pattern. It can be easily seen from the bonding pattern whether the transfer pattern is shifted, and the shift amount of the transfer pattern can be obtained. Another object of the present invention is to provide a method for detecting a transfer pattern by using a detection pattern of a U-shaped frame mask. Through a special design, and respectively planted at the upper left and right sides of the U-shaped frame of the U-shaped frame mask A pair of lower detection patterns. After exposure and development with this u-shaped frame mask, the transfer patterns that are respectively located in different u-shaped frames and constitute a pair of bonding patterns are compared with the original detection pattern. The entire testing process is quite simple and does not require the use of additional equipment or increase the complexity of the process to obtain good testing results. Another object of the present invention is that the detection pattern and detection method of the U-shaped mask provided by the present invention can detect the pattern transfer of the first material layer in real time. And can immediately judge whether the machine program and step size correction need to be performed based on the test results. Therefore, it is possible to improve the reliability of the process ' kL product quality ' and improve the process yield. According to the above-mentioned object, the present invention further provides a U-frame mask detection pattern, which is planted on the U-frame layout of the U-frame mask, and the detection pattern of the ϋ-frame mask is at least Including: a first set of patterns includes at least a first pattern, a plurality of second patterns, and a third pattern, and these second patterns are centered on the first pattern and the paper is flat with a first preset distance Standards are applicable to China National Standard (CNS) A4 (210 × 297 mm). ..Line (please read the notes on the back before filling this page) 574741 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A 7 B7 V. Description of the invention () are distributed on both sides of the first pattern, while the third pattern It is a step-like pattern. The step-like pattern in 〃 includes at least a plurality of steps, and these steps are located on the same straight line. Each adjacent step has a second preset distance. The second set of patterns includes at least A fourth pattern, a plurality of fifth patterns, and a plurality of sixth patterns, and the fifth patterns are centered on the fourth pattern Heart, and distributed evenly on both sides of the fourth pattern with a third preset distance, wherein the width of the first pattern, the width of the second pattern, the width of the fourth pattern, and the width of the fifth pattern are the same, and There is a fourth predetermined distance between each adjacent sixth pattern. After the stepwise exposure using the above-mentioned frame-shaped mask and development, under normal circumstances, the first pattern of the first group of patterns and the fourth pattern of the second group of patterns can be directly combined into a straight line, The bottom of the third pattern of the one set of patterns may be just engaged with the top of the sixth pattern of the second set of patterns. According to the above-mentioned purpose, the present invention further provides a detection pattern of a υ-shaped frame mask, which is planted on the υ-shaped frame layout of the υ-shaped frame mask, and the detection pattern of the U-shaped frame mask is at least Including: a first set of patterns includes at least a first pattern and a second pattern; and a second set of patterns includes at least a second pattern and a fourth pattern, wherein the second pattern of the first set of patterns and The fourth pattern of the second group of patterns constitutes a first square frame pattern, and the first pattern of the second group of patterns and the third pattern of the second group of patterns form a second square frame pattern. Using the U-shaped mask described above for stepwise exposure, and after development, under normal circumstances, the first pattern of the first group of patterns and the third pattern of the second group of patterns can be directly joined to form a second square Frame pattern, and the 6th paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) ...... ": .......... install ... ........ line (Please read the notes on the back before filling out this page) 574741 A7
I I I I I 馨 I I I 訂 線 574741 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 型框佈局步進特徵圖； 第3圖為繪示本發明之第一較佳實施例之U型框光罩 的檢測圖案的放大示意圖； 第4圖為繪示在正常情況下，本發明之第一較佳實施 例之U型框光罩的檢測圖案的接合圖案放大圖； 第5圖為繪示在χ軸產生偏移的一種轉移情況下，本 發明之第一較佳實施例之U型框光罩的檢測圖案的接合圖 案放大圖； 第ό圖為繪示在χ軸產生偏移的另一種轉移情況下， 本發明之第一較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖； 第7圖為繪示在γ軸產生偏移的一種轉移情況下，本 發明之第一較佳實施例之U型框光罩的檢測圖案的接合圖 案放大圖， 第8圖為繪示在Υ軸產生偏移的另一種轉移情況下， 本發明之第一較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖； 第9圖為繪示本發明之第二較佳實施例之υ型框光罩 的檢測圖案的放大圖； 第1 0圖為繪示在正常轉移情況下，本發明之第二較佳 實施例之U型框光罩的檢測圖案的接合圖案放大圖； 第11圖為續*不在X轴產生偏移的一種轉移情況下’本 發明之第二較佳實施例之υ型框光罩的檢測圖案的接合圖 8 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 裝.........訂.........線 (請先閲讀背面之注意事項再塡寫本頁) 574741 A7IIIII Xin III Line 574741 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Step diagram of frame layout; Figure 3 is a U-shape showing the first preferred embodiment of the present invention Enlarged schematic diagram of the detection pattern of the frame mask; FIG. 4 is an enlarged view showing the bonding pattern of the detection pattern of the U-shaped frame mask according to the first preferred embodiment of the present invention under normal circumstances; FIG. 5 is a drawing An enlarged view of a bonding pattern of a detection pattern of a U-shaped mask in the first preferred embodiment of the present invention is shown in a case where a shift occurs on the χ-axis; FIG. In another transfer case, an enlarged view of a bonding pattern of a detection pattern of a U-shaped mask of the first preferred embodiment of the present invention; FIG. 7 is a diagram showing a transfer case in which a shift occurs in the γ axis of the present invention The enlarged view of the bonding pattern of the detection pattern of the U-shaped frame mask of the first preferred embodiment. FIG. 8 is a diagram illustrating another first transition of the present invention in the case of a shift in the Z axis. Of detection pattern of U-shaped mask Figure 9 is an enlarged view showing a detection pattern of a υ-shaped frame mask according to the second preferred embodiment of the present invention. Figure 10 is a second view showing the second aspect of the present invention in a normal transfer case. The enlarged view of the bonding pattern of the detection pattern of the U-shaped frame mask of the preferred embodiment; FIG. 11 is a continuation * Without a shift in the X-axis shift, the 'U-shaped frame of the second preferred embodiment of the present invention' Photomask detection pattern connection Figure 8 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) Installed ......... Order ... line (please first (Read the notes on the back and rewrite this page) 574741 A7
經濟部智慧財產局員工消費合作社印製 五、發明説明（） 案放大圖； 第12圖為繪示在χ軸產生偏移的另一種轉移情況下， 本發明之第二較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖； 第13圖為繪示在γ軸產生偏移的一種轉移情況下，本 發明之第二較佳實施例之U型框光罩的檢測圖案的接合圖 案放大圖；以及 第14圖為續^示在γ軸產生偏移的另一種轉移情況下’ 本發明之第二較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖。 圖號對照說明： 50 U形框佈局 52 左上端 54 右下端 60 U型框轉移圖案 62 u型框轉移圖案 64 u型框轉移圖案 66 U型框轉移圖案 70 右下端 72 左上端 100 檢測圖案 102 第一組圖案 104 第二組圖案 106 第一圖案 108 第二圖案 110 第三圖案 112 第四圖案 114 第五圖案 1 16 第六圖案 118 第一預設距離 120 寬度 122 寬度 124 第三預設距離 126 寬度 128 寬度 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ......Ρ I 丨—一.....^.........β.........線 (請先閲讀背面之注意事項再塡寫本頁) 574741 A7 B7 五、發明説明（） 130 第 二 預 設 距 離 132 第 四 預 設 距 離 134 寬 度 150 接 合 圖 案 152 第 一 組 轉 移 圖 案 154 第 二 組 轉 移 圖 案 156 第 一 圖 案 158 第 二 圖 案 160 第 三 圖 案 162 第 四 圖 案 164 第 五 圖 案 166 第 六 圖 案 168 多 餘 圖 案 200 檢 測 圖 案 202 第 一 組 圖 案 204 第 二 組 圖 案 206 第 一 圖 案 208 第 二 圖 案 210 第 圖 案 212 第 四 圖 案 220 接 合 圖 案 221 第 一 方 形 框 圖 案 222 第 一 組 轉 移 圖 案 223 第 二 方 形 框 圖 案 224 第 二 組 轉 移 圖 案 226 第 一 圖 案 228 第 - 圖 案 229 寬 度 230 第 三 圖 案 232 第 四 圖 案 234 多 餘 圖 案 發明' 洋細 說 1明 : (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本發明揭露一種U型框光罩之檢測圖案以及檢測方 法，其中檢測圖案包括兩組圖案，將這兩組圖案分別植佈 在U型框光罩上之U型框佈局的右下端以及左上端，經曝 光顯影後，進行光阻圖案之檢查。為了使本發明之敘述更 加詳盡與完備，可參照下列描述並配合第1圖至第1 4圖 之圖示。 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 574741 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 目則，在積體電路的製作過程中，1；型框佈局係一種 使用率相當高的佈局型式。為了改善以步進式曝光機台進 行第一層材料層之曝光的準確度，本發明提供一種配置在 U 框光罩上之U型框佈局中的檢測圖案，以及應用此檢 測圖案進行步進式曝光機台之步進尺寸的檢查。 叫參第1圖’其係繪示本發明之較佳實施例之u 型框光罩的U型框佈局圖。1；型框佈局5〇通常係為不透光 區域，且可用以配置多種製程輔助圖案。本發明之檢測圖 案就是分別植佈在U型框佈局50之左上端52以及右下端 54上。請參照第2圖，當以具有u型框佈局之光罩（未 繪示）進行步進式曝光時，經顯影後所形成之U型框轉移圖 案60、u型框轉移圖案62、υ型框轉移圖案64、以及。 型框轉移圖案66接合在一起。其中，υ型框轉移圖案6〇 之右邊框與U型框轉移圖案66之左邊框互相堆疊，^型框 轉移圖案62之右邊框與υ型框轉移圖案64之左邊框互相 堆疊。因而，使得U型框轉移圖案64之左上端了：與^^型 框轉移圖案60之右下端7〇產生接合。因此，本發明即是 利用U型框佈局50進行步進式曝光所產生之特性，來達到 檢測步進尺寸的目的。 請參照度3圖’其係繪示本發明之第一較佳實施例之υ 型框光罩的檢測圖案的放大示意圖。檢測圖案1 〇 〇係由第 一組圖案102以及第二組圖案104所構成，為配合目前廣 泛使用之正型光阻，第一組圖案102以及第二組圖案1〇4 π 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .....Γ .....裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 574741 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 皆為不透光之圖案。其中，第一組圖案102至少包括第一 圖案106、複數個第二圖案108、以及第三圖案110，而第 二組圖案則至少包括第四圖案1 1 2、複數個第五圖案1 1 4、 以及複數個第六圖案1 1 6。 這些第二圖案108以第一圖案106為中心，平均分佈 在第一圖案106之兩側，且第二圖案108與相鄰之第二圖 案1 08或第一圖案1 06皆相距第一預設距離1 1 8。此外， 這些第五圖案114以第四圖案112為中心，平均分佈在第 四圖案112之兩側，且第五圖案114與相鄰之第五圖案114 或第四圖案1 1 2皆相距第三預設距離1 24。第三圖案1 1 0 為具有複數個階梯之階梯狀圖案，其中每一個相鄰之階梯 間的高度差為第二預設距離 1 3 0，且每一個階梯之底部都 位於同一直線上。而第六圖案1 1 6則以第四預設距離1 3 2 平均分佈。 在此實施例中，第一圖案106之寬度120、第二圖案 108之寬度122、第四圖案112之寬度126、以及第五圖案 114之寬度128皆相同。另一方面，第一圖案106之寬度 120、第二圖案108之寬度122、第四圖案Π2之寬度126、 第五圖案114之寬度128、第一預設距離118、第二預設距 離1 3 0、以及第三預設距離1 24之大小可依檢測所需之準 確程度予以變化。舉例而言，若欲獲得較高之檢測準確度， 則可將第一預設距離1 1 8與第三預設距離1 24之間的差距 縮減。此外，第二圖案108、第五圖案114、第六圖案116、 12 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ......-.....裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 574741 五 經濟部智慧財產局員工消費合作社印製 A 7 __B7__ ___—1 、發明説明（） 以及第三圖案11 0之階梯狀圖案之階梯的數目，可依所需 之檢測範圍予以增刪。 請先參照第9圖，其係繪示本發明之第二較佳實施例 之U型框光罩的檢測圖案的放大圖。檢測圖案200至少包 括第一組圖案202以及第二組圖案204，且第一組圖案202 係至少由第一圖案206以及第二圖案208所組成，而第二 組圖案204則係至少由第三圖案210以及第四圖案212所 組成。其中，第一組圖案202中之第二圖案208與第二組 圖案204中之第四圖案212可組合而成方形框圖案，真第 一組圖案202中之第一圖案206與第二組圖案204中之第 三圖案2 1 0亦可組合而成方形框圖案。由於，檢測圖案2G() 為相當簡單且易於辨識之圖案，因此很輕易地便可判別出 檢測圖案200是否產生偏移。 請參照第1圖至第14圖，運用檢測圖案1 〇〇、檢測圖 案200、或兩者之組合，來進行步進式曝光機台，例如步 進機以及掃描機等，之步進尺寸的檢測，係為顯影後檢查 (After Developer Inspection; ADI)。首先，在半導體之基 材，例如裸晶圓，上依序覆蓋第一材料層以及光阻層，其 中光阻層之材料係選用正形光阻。接著，提供至少包括有 U型框佈局50(見第1圖）之u型框光罩，並利用此^型框 光罩以及步進式曝光機台對上述之光阻層進行步進式曝 光。藉以將U型框光罩上之u型框佈局50，以步進的方式 一次次地複製到光阻層上。其中，ϋ型框佈局5〇之右下端 13 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐) .....Γ·」.....裝.........訂.........線 1請先閲讀背面之注意事項存填寫本頁) 574741 五 經濟部智慧財產局員工消費合作社印製 A7 B7 發明説明（ 已植佈有第3圖之檢測圖案1〇〇的第一組圖案1〇 圖之檢測圖案200的第一組圖案2〇2、或同時植佈有 兩者。而且，U型框佈局50之左上端已植佈有第3圖之二 測圖案刚的第二组圖案104、或第9圖之檢測圖案^ 的第二，组圖案204、或同時植佈有這兩種圖案。 此時，對上述之光阻層進行顯影步驟，藉以在光阻層 上形成如第2圖所示之u型框轉移圖案mi龍轉移圖 案62、U型框轉移圖案64、以及u型框轉移圖案66。由 於，這些u型框轉移圖案係從u型框光罩上之1；型框佈局 50轉移而得。因此，每一個u型框轉移圖案之右下端形成 有由例如檢測圖案100之第一組圖案1〇2、或檢測圖案2〇c 之第一組圖案202、或上述兩者之組合等，所轉移之第一 組轉移圖案。而且，每一個ϋ型框轉移圖案之左上端形成 有由例如檢測圖案100之第二組圖案1〇4、或檢測圖案2〇c 之第二組圖案2 04、或這兩種圖案之組合等，所轉移之第 二組轉移圖案。在第2圖中，ϋ型框轉移圖案60之右下端 70上的第一組轉移圖案與υ型框轉移圖案64之左上端72 上的第二組轉移圖案接合在一起，而形成接合圖案。以下 為本發明之檢測圖案1 00以及檢測圖案2〇〇，所形成的幾 種接合圖案。 第4圖所繪示為在正常情況下，本發明之第一較佳實 施例之U型框光罩的檢測圖案的接合圖案放大圖。在步進 式曝光機台之步進尺寸無誤下，接合圖案15〇的第一組轉 14 本紙張尺度適用中國國家標準(CNS)A4規格(2丨0Χ 297公釐) ...........裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁)_ A7 B7 574741 五、發明説明（） 移圖案152與第二組轉移圖案154正好接合。也就是說， 第一組轉移圖案152之第一圖案156的底部正好與第二組 轉移圖案154之第四圖案162的頂部碰觸，且第一組轉移 圖案152之第二圖案16〇的底部正好與第二組轉移圖案154 之第六圖案166的頂部碰觸。另外，第一圖案丨56與第四 圖案162形成一直線。 第5圖所緣不為在χ軸產生偏移的一種轉移情況下， 本發明之第一較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖。第5圖係表示第一組轉移圖案152向右偏移， 或者是第二組轉移圖案154向左偏移，而使得第一圖案156 與第四圖案162無法對準成一直線。另外，第6圖所繪示 為在X軸產生偏移的另一種轉移情況下，本發明之第一較 佳實施例之U型框光罩的檢測圖案的接合圖案放大圖。第 6圖係表示第一組轉移圖案152向左偏移，或者是第二組 轉移圖案154向右偏移，而使得第一圖案156與第四圖案 1 62無法成一直線排列。上述之兩種偏移情況，皆可根據 第一圖案156與第四圖案162之間的距離，獲得步進尺寸 的偏移量。 第7圖所繪示為在Y軸產生偏移的一種轉移情況下， 本發明之第一較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖。第7圖係表示接合圖案150之第一組轉移圖 案152向下偏移，或者是其第二組轉移圖案154向上偏移 的情況，在此為偏移量約為接合圖案150之第三圖案160 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ......-:.....裝.........訂.........線 (請先閱讀背面之注意事項再«寫本頁} 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 574741 A7 -——* -----— R7______ 五、發明説明（） 的 ^梯的南度°由於，在本發明中所使用之光阻為正 型光阻，+ l 弟 園之檢測圖案1 0 0不透光。因此，檢測圖 案⑽之第二圖案U0與其第六圖案116間之透光區域重 叠的區域所對應之光阻，會被曝光，而使得接合圖案⑸ 之第一圖案i60的底部部分被顯影掉。再請參照第8圖， 其係、.曰不在Y轴產生偏移的另一種轉移情況下本發明之 第較佳實施例之U型框光罩的檢測圖案的接合圖案放大 圖。第8圖係表示接合圖案150之第一組轉移圖案152向 上偏移’或者是其第二組轉移圖案154向下偏移的情況， 而使彳于接合圖案150之第一組轉移圖案152與其第二組轉 移圖案154之間形成一段未曝光區域。此未曝光區域並不 會被顯影掉，而在接合圖案15〇之第一組轉移圖案152與 其第二組轉移圖案154之間形成多餘圖案ι68。上述之兩 種偏移情況，皆可根據接合圖案丨5〇之第三圖案丨60被移 除的高度，獲得步進尺寸的偏移量。 由上述之說明可知，本發明之第一較佳實施例能將步 進尺寸的偏移量予以量化，並根據所需之準確度，設計檢 測圖案間之相對尺寸。另一方面，本發明為了能快速並有 效地檢測出，步進式曝光機台是否有偏移的情況。因此， 另外設計了一組圖案，即第9圖所示之檢測圖案200，來 幫助線上工作人員判斷步進式曝光機台之程式或步進尺寸 是否有錯誤產生。 請參照第1 0圖，其係繪示在正常轉移情況下，本發明 本紙張尺度適用中國國家標準(CNS)A4規格(Μ0/ a”公釐) ......-« .....裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁} 574741 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 之第二較佳實施例之U型框光罩的檢測圖案的接合圖案放 大圖。在步進尺寸無誤下，接合圖案220中，第一組轉移 圖案222之第一圖案226與第二組轉移圖案224之第三圖 案230會接合成第二方形框圖案223，而第一組轉移圖案 222之第二圖案228與第二組轉移圖案224之第四圖案232 則接合成第一方形框圖案2 2 1。 第1 1圖所繪示為在X軸產生偏移的一種轉移情況下， 本發明之第一較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖。第U圖為表示第一組轉移圖案222向右偏 移，或者是第二組轉移圖案224向左偏移的情形。因而導 致接合圖案220之第一圖案226與其第三圖案230無法接 合成方形框圖案，且同時使接合圖案220之第二圖案228 與第四圖案232無法接合成另一方形框圖案。另一方面， 第12圖所繪示則為在X軸產生偏移的另一種轉移情況下， 本發明之第二較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖。第12圖係表示接合圖案22 0之第一組轉移圖 案222向左偏移，或者是其第二組轉移圖案224向右偏移。 同樣使得接合圖案220之第一圖案226與其第三圖案230 不能接合形成方形框圖案，而接合圖案220之第二圖案228 與其第四圖案23 2亦無法接合成另一方形框圖案。 第13圖所繪示為在Y軸產生偏移的一種轉移情況下， 本發明之第二較佳實施例之U型框光罩的檢測圖案的接合 圖案放大圖。第13圖係表示接合圖案220之第一組轉移圖 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 574741 經濟部智慧財產局員工消費合作社印製 A 7 B7 五、發明説明（） 案222產生向下偏移’或者是其第二組轉移圖案224產生 向上偏移的情況。在此實施例中，偏移量大於接合圖案22〇 之第二圖案228的寬度229(見第10圖）。由於，在此實施 例中’同樣採用正型光阻來作為光阻層之材料，且第9圖 之檢測圖案200不透光。因此，同樣會使得檢測圖案2〇0 之第二圖案208完全與其第四圖案212間之透光區域重 疊。上述之重疊區域所對應到之光阻被曝光，使得檢測圖 案200所轉移形成之接合圖案220的第二圖案228被顯影 掉，而消失。另外，請參照第14圖，其係繪示在γ軸產生 偏移的另一種轉移情況下，本發明之第二較佳實施例之u 型框光罩的檢測圖案的接合圖案放大圖。第14圖係表示接 合圖案220之第一組轉移圖案222向上偏移，或者是其第 二組轉移圖案224向下偏移的情況，因而在接合圖案22〇 之第一組轉移圖案222與其第二組轉移圖案224之間產生 未曝光區域。由於此未曝光區域並不會被顯影掉，而在# 合圖案220之第一組轉移圖案222與其第二組轉移圖案224 之間形成多餘圖案234。 由於本發明之第二較佳實施例之檢測圖案2〇〇，其圖_ 簡單明瞭’對線上工作人員而言’相當容易就可察覺步進 尺寸是否有錯誤產生。此外，檢測圖案200之方形框圖案 以及方形框圖案之間的距離可依檢測製程之需求而定 舉 例而言，若想利用檢測圖案200進行步進偏移晋夕、、a|田 里消J量 時，可以一特定距離配置多個同心的方形框圖案，便可達 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) .......——·.....裝.........訂.........線 (請先閱讀背面之注意事項再填寫本頁} 574741 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 到量化偏移程度。 本發明之一優ft料、3 + 定點就疋在提供一種ϋ型框光罩之檢測圖Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. An enlarged view of the invention description. Figure 12 shows another example of the shift in the x-axis shift, U of the second preferred embodiment of the present invention. An enlarged view of the bonding pattern of the detection pattern of the frame mask. FIG. 13 is a drawing showing the detection pattern of the U-frame mask of the second preferred embodiment of the present invention in a case where a shift occurs in the γ axis. An enlarged view of the bonding pattern; and FIG. 14 is an enlarged view of the bonding pattern of the detection pattern of the U-shaped mask of the second preferred embodiment of the present invention, which is continued in another transition case where the γ axis is shifted. Comparative description of drawing numbers: 50 U-shaped frame layout 52 upper left end 54 lower right end 60 U-shaped frame transfer pattern 62 u-shaped frame transfer pattern 64 u-shaped frame transfer pattern 66 U-shaped frame transfer pattern 70 lower right end 72 upper left end 100 detection pattern 102 First set of patterns 104 Second set of patterns 106 First pattern 108 Second pattern 110 Third pattern 112 Fourth pattern 114 Fifth pattern 1 16 Sixth pattern 118 First preset distance 120 Width 122 Width 124 Third preset Set distance 126 Width 128 Width This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) ...... Ρ I 丨 — 一 ......... ^ ......... β ......... line (please read the precautions on the back before copying this page) 574741 A7 B7 V. Description of the invention (130) Second preset distance 132 Fourth preset distance 134 Width 150 Joint pattern 152 The first set of transfer patterns 154 The second set of transfer patterns 156 The first pattern 158 The second pattern 160 The third pattern 162 The fourth pattern 164 The fifth pattern 166 The sixth pattern 168 The redundant pattern 200 Detection pattern 202 The first set of patterns 204 The second set of patterns 206 The first pattern 208 The second pattern 210 The first pattern 212 The fourth pattern 220 The bonding pattern 221 The first square frame pattern 222 The first group of transfer patterns 223 The second square frame pattern 224 The second group of transfer patterns 226 first pattern 228 first-pattern 229 width 230 third pattern 232 fourth pattern 234 excess pattern invention 'foreign details 1 clear: (Please read the precautions on the back before filling out this page) Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau, the present invention discloses a detection pattern and a detection method of a U-shaped mask, wherein the detection pattern includes two sets of patterns, and the two sets of patterns are respectively planted on the U-shaped mask. The lower right and upper left ends of the frame layout are inspected for photoresist patterns after exposure and development. In order to make the description of the present invention more detailed and complete, reference may be made to the following descriptions and the illustrations of FIGS. 1 to 14. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 574741 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () In the production process of integrated circuits, 1; Frame layout is a type of layout with a very high usage rate. In order to improve the accuracy of the exposure of the first material layer by the step-type exposure machine, the present invention provides a detection pattern in a U-frame layout arranged on a U-frame mask, and applies the detection pattern for stepping Inspection of the step size of the exposure machine. Called Part 1 'is a layout diagram of a U-shaped frame of a U-shaped frame mask according to a preferred embodiment of the present invention. 1; The frame layout 50 is usually an opaque area, and can be used to configure a variety of process auxiliary patterns. The detection patterns of the present invention are planted on the upper left end 52 and lower right end 54 of the U-shaped frame layout 50, respectively. Please refer to FIG. 2. When stepwise exposure is performed with a mask (not shown) with a u-shaped frame layout, the U-shaped frame transfer pattern 60, u-shaped frame transfer pattern 62, and υ-shaped are formed after development. Frame transfer pattern 64 as well. The frame transfer patterns 66 are joined together. Among them, the right frame of the υ-shaped frame transfer pattern 60 and the left frame of the U-shaped frame transfer pattern 66 are stacked on each other, and the right frame of the ^ -shaped frame transfer pattern 62 and the left-shaped frame of the υ-shaped frame transfer pattern 64 are stacked on each other. Therefore, the upper left end of the U-shaped frame transfer pattern 64 is caused to be joined with the lower right end 70 of the ^^-shaped frame transfer pattern 60. Therefore, the present invention uses the characteristics of the U-shaped frame layout 50 for stepwise exposure to achieve the purpose of detecting the step size. Please refer to FIG. 3, which is an enlarged schematic diagram showing a detection pattern of a υ-shaped frame mask according to the first preferred embodiment of the present invention. The detection pattern 100 is composed of a first group of patterns 102 and a second group of patterns 104. In order to match the positive photoresist widely used at present, the first group of patterns 102 and the second group of patterns 104 π This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ..... Γ ..... installed ......... order ......... line ( (Please read the notes on the back before filling this page) 574741 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () All are opaque patterns. The first group of patterns 102 includes at least a first pattern 106, a plurality of second patterns 108, and a third pattern 110, and the second group of patterns includes at least a fourth pattern 1 1 2 and a plurality of fifth patterns 1 1 4 and a plurality of sixth patterns 1 1 6. These second patterns 108 are centered on the first pattern 106 and are evenly distributed on both sides of the first pattern 106, and the second pattern 108 and the adjacent second pattern 108 or the first pattern 106 are spaced apart from each other by a first preset. Distance 1 1 8. In addition, these fifth patterns 114 are centered on the fourth pattern 112 and are evenly distributed on both sides of the fourth pattern 112, and the fifth pattern 114 and the adjacent fifth pattern 114 or the fourth pattern 1 1 2 are separated from each other by a third The preset distance is 1 to 24. The third pattern 1 1 0 is a step-like pattern having a plurality of steps, wherein the height difference between each adjacent step is a second preset distance 1 3 0, and the bottom of each step is located on the same straight line. The sixth patterns 1 1 6 are evenly distributed at the fourth preset distance 1 3 2. In this embodiment, the width 120 of the first pattern 106, the width 122 of the second pattern 108, the width 126 of the fourth pattern 112, and the width 128 of the fifth pattern 114 are the same. On the other hand, the width 120 of the first pattern 106, the width 122 of the second pattern 108, the width 126 of the fourth pattern Π2, the width 128 of the fifth pattern 114, the first preset distance 118, and the second preset distance 1 3 The sizes of 0 and the third preset distance 1 24 can be changed according to the accuracy required for detection. For example, if a higher detection accuracy is desired, the gap between the first preset distance 1 1 8 and the third preset distance 1 24 can be reduced. In addition, the second pattern 108, the fifth pattern 114, the sixth pattern 116, and 12 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ......-... ....... Order ... line (please read the precautions on the back before filling this page) 574741 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A 7 __B7__ ___— 1 、 Description of the invention () and the number of steps of the step-like pattern of the third pattern 110 can be added or deleted according to the required detection range. Please refer to FIG. 9 first, which is an enlarged view showing a detection pattern of a U-frame mask of a second preferred embodiment of the present invention. The detection pattern 200 includes at least a first group of patterns 202 and a second group of patterns 204, and the first group of patterns 202 is composed of at least a first pattern 206 and a second pattern 208, and the second group of patterns 204 is It is composed of at least a third pattern 210 and a fourth pattern 212. The second pattern 208 in the first group of patterns 202 and the fourth pattern 212 in the second group of patterns 204 can be combined to form a square frame pattern. The first pattern 206 and the first pattern 206 in the first group of patterns 202 The third pattern 2 1 0 in the two sets of patterns 204 can also be combined to form a square frame pattern. Since the detection pattern 2G () is a relatively simple and easy-to-recognize pattern, it can be easily determined whether the detection pattern 200 is shifted. Please refer to Fig. 1 to Fig. 14. Use the detection pattern 100, the detection pattern 200, or a combination of the two to perform a stepwise exposure machine, such as a stepper and a scanner. Inspection is after developer inspection (ADI). First, a semiconductor material, such as a bare wafer, is sequentially covered with a first material layer and a photoresist layer, and the material of the photoresist layer is a regular photoresist. Next, provide a U-frame mask including at least a U-frame layout 50 (see Fig. 1), and use this ^ -frame mask and a step exposure machine to perform stepwise exposure to the photoresist layer described above. . The U-shaped frame layout 50 on the U-shaped mask is then copied to the photoresist layer in a step-by-step manner. Among them, the 框 -shaped frame layout of the lower right end of the 50 size 13 paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) ..... Γ. ... Order ......... Line 1 Please read the precautions on the back and fill in this page) 574741 Printed by A5, B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, A7 B7 Invention Description The first set of patterns of the detection pattern 100 in the figure 10 The first set of patterns 002 of the detection pattern 200 in the figure or both are planted at the same time. Moreover, the upper left end of the U-shaped frame layout 50 has been planted. The second group of patterns 104 in Figure 3bis, or the second, group of patterns 204 in Figure 9, or both of these patterns are planted. At this time, the above light The resist layer is subjected to a developing step to form a u-shaped frame transfer pattern milong transfer pattern 62, a U-shaped frame transfer pattern 64, and a u-shaped frame transfer pattern 66 on the photoresist layer as shown in FIG. The frame transfer pattern is transferred from 1 on the U-shaped frame mask; the frame layout 50 is transferred. Therefore, the lower right end of each U-shaped frame transfer pattern is formed with, for example, the first 100 Group pattern 102, or the first group pattern 202 of the detection pattern 20c, or a combination of the above, etc., is the first group of transfer patterns transferred. Furthermore, the upper left end of each of the frame transfer patterns A second set of transfer patterns transferred by, for example, the second set of patterns 104 of the detection pattern 100, the second set of patterns 204 of the detection pattern 20c, or a combination of the two patterns is formed. In FIG. 2, the first set of transfer patterns on the lower right end 70 of the ϋ-shaped frame transfer pattern 60 and the second set of transfer patterns on the upper left end 72 of the 型 -shaped frame transfer pattern 64 are joined together to form a bonding pattern. The following are several types of bonding patterns formed by the detection pattern 100 and the detection pattern 200 of the present invention. Figure 4 shows the U-shaped frame light of the first preferred embodiment of the present invention under normal circumstances. Enlarged view of the bonding pattern of the detection pattern of the hood. With the correct step size of the stepping exposure machine, the first group of bonding patterns 15 to 14 This paper size applies to China National Standard (CNS) A4 specifications (2 丨 0 × 297 mm) ........... install ......... order ... (Please note this page and fill in this page again) _ A7 B7 574741 V. Description of the invention () The shift pattern 152 is just joined with the second set of transfer patterns 154. That is to say, the bottom of the first pattern 156 of the first set of transfer patterns 152 is exactly the same as the first The top of the fourth pattern 162 of the two sets of transfer patterns 154 touches, and the bottom of the second pattern 16 of the first set of transfer patterns 152 touches the top of the sixth pattern 166 of the second set of transfer patterns 154. In addition, The first pattern 56 and the fourth pattern 162 form a straight line. Figure 5 is not an enlarged view of the bonding pattern of the detection pattern of the U-shaped mask of the first preferred embodiment of the present invention in a case where the x-axis shifts. FIG. 5 shows that the first group of transfer patterns 152 is shifted to the right, or the second group of transfer patterns 154 is shifted to the left, so that the first pattern 156 and the fourth pattern 162 cannot be aligned. In addition, FIG. 6 is an enlarged view of the bonding pattern of the detection pattern of the U-shaped mask of the first preferred embodiment of the present invention in another case where the X axis is shifted. FIG. 6 shows that the first group of transfer patterns 152 is shifted to the left, or the second group of transfer patterns 154 is shifted to the right, so that the first pattern 156 and the fourth pattern 162 cannot be aligned in a line. In both of the above-mentioned offset cases, the step size offset can be obtained according to the distance between the first pattern 156 and the fourth pattern 162. FIG. 7 is an enlarged view of a bonding pattern of a detection pattern of a U-shaped mask in a first preferred embodiment of the present invention in a case where a shift occurs in the Y axis. FIG. 7 shows the case where the first group of transfer patterns 152 of the bonding pattern 150 is shifted downward, or the second group of transfer patterns 154 of the bonding pattern 150 is shifted upward. Here, the third pattern is about the third pattern of the bonding pattern 150. 160 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) ......-: ..... install ......... order ... .Line (Please read the notes on the back before «write this page» Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by 574741 A7 -—— * -----— R7______ 5 2. The south degree of the ladder in the description of the invention (°) Because the photoresist used in the present invention is a positive photoresist, the detection pattern 1 0 of the garden is opaque. Therefore, the detection pattern The photoresist corresponding to the area where the light-transmitting area between the two patterns U0 and the sixth pattern 116 overlaps will be exposed, so that the bottom part of the first pattern i60 of the bonding pattern 显影 is developed. Please refer to FIG. 8 again, This is the connection of the detection pattern of the U-shaped mask of the first preferred embodiment of the present invention in a case where the Y-axis is not shifted. The enlarged view of the combined pattern. FIG. 8 shows the case where the first group of transfer patterns 152 of the bonding pattern 150 is shifted upwards or the second group of transfer patterns 154 of the bonding pattern 150 is shifted downward, so that the first pattern of the bonding pattern 150 is shifted downward. An unexposed area is formed between the group of transfer patterns 152 and its second group of transfer patterns 154. This unexposed area is not developed, and the first group of transfer patterns 152 and its second group of transfer patterns 154 are bonded to the pattern 15 An extra pattern ι68 is formed between the two. In the above two types of offsets, the offset of the step size can be obtained according to the removed height of the third pattern 60 of the bonding pattern 丨 50. From the above description, The first preferred embodiment of the present invention can quantify the shift amount of the step size, and design the relative size between the detection patterns according to the required accuracy. On the other hand, the present invention aims to quickly and effectively detect Whether the stepping exposure machine is shifted. Therefore, a set of patterns, namely the detection pattern 200 shown in Figure 9, was designed to help online staff determine the program of the stepping exposure machine. Or whether there is an error in the step size. Please refer to FIG. 10, which shows that under normal transfer conditions, the paper size of the present invention is applicable to the Chinese National Standard (CNS) A4 specification (M0 / a ”mm) .. ....- «..... installed ......... order ......... line (Please read the precautions on the back before filling out this page) 574741 Intellectual Property of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau A7 B7 V. Enlarged view of the joining pattern of the detection pattern of the U-shaped mask of the second preferred embodiment of the invention (). Under the correct step size, in the joining pattern 220, the first The first pattern 226 of the group of transfer patterns 222 and the third pattern 230 of the second group of transfer patterns 224 are joined to form a second square frame pattern 223, and the second pattern 228 of the first group of transfer patterns 222 and the second group of transfer patterns 224 The fourth pattern 232 is connected to the first square frame pattern 2 2 1. FIG. 11 is an enlarged view of a bonding pattern of a detection pattern of a U-shaped mask in a first preferred embodiment of the present invention in a case where a shift occurs in the X axis. Fig. U shows the case where the first group of transfer patterns 222 is shifted to the right, or the second group of transfer patterns 224 is shifted to the left. Therefore, the first pattern 226 and the third pattern 230 of the bonding pattern 220 cannot be combined into a square frame pattern, and the second pattern 228 and the fourth pattern 232 of the bonding pattern 220 cannot be combined into another square frame pattern. On the other hand, FIG. 12 is an enlarged view of a bonding pattern of a detection pattern of a U-shaped mask in a second preferred embodiment of the present invention in a case where another shift occurs in the X axis. Fig. 12 shows that the first group of transfer patterns 222 of the bonding pattern 220 is shifted to the left, or the second group of transfer patterns 224 thereof is shifted to the right. Similarly, the first pattern 226 and the third pattern 230 of the bonding pattern 220 cannot be joined to form a square frame pattern, and the second pattern 228 and the fourth pattern 23 2 of the bonding pattern 220 cannot be combined into another square frame pattern. FIG. 13 is an enlarged view of a bonding pattern of a detection pattern of a U-shaped mask in a second preferred embodiment of the present invention in a case where a shift occurs in the Y axis. Figure 13 shows the first set of transfer patterns of the bonding pattern 220. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) .......... Order ... .Line (please read the precautions on the back before filling this page) 574741 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A 7 B7 V. Description of the invention () Case 222 caused downward shift 'or its second group transfer The pattern 224 is shifted upward. In this embodiment, the offset is greater than the width 229 of the second pattern 228 of the bonding pattern 22 (see FIG. 10). Because, in this embodiment, a positive type photoresist is also used as the material of the photoresist layer, and the detection pattern 200 in FIG. 9 is opaque. Therefore, the light transmission area between the second pattern 208 of the detection pattern 2000 and the fourth pattern 212 is also completely overlapped. The photoresist corresponding to the above-mentioned overlapping area is exposed, so that the second pattern 228 of the bonding pattern 220 transferred and formed by the detection pattern 200 is developed and disappears. In addition, please refer to FIG. 14, which is an enlarged view of a bonding pattern of a detection pattern of a u-shaped frame mask in a second preferred embodiment of the present invention in a case where another shift occurs in the γ-axis. FIG. 14 shows the case where the first group of transfer patterns 222 of the bonding pattern 220 is shifted upward, or the second group of transfer patterns 224 of the bonding pattern 220 is shifted downward. Unexposed areas are generated between the two sets of transfer patterns 224. Since this unexposed area is not developed, a redundant pattern 234 is formed between the first group of transfer patterns 222 of the #combination pattern 220 and its second group of transfer patterns 224. Since the detection pattern 200 of the second preferred embodiment of the present invention is simple and clear, 'for online workers,' it is quite easy to detect whether there is an error in the step size. In addition, the square frame pattern of the detection pattern 200 and the distance between the square frame patterns can be determined according to the needs of the detection process. For example, if you want to use the detection pattern 200 for step offset Jin Xi,, a | 田里 消 J When measuring, you can configure multiple concentric square box patterns at a specific distance, and you can reach the size of this paper to apply Chinese National Standard (CNS) A4 specification (210X 297 mm). ..Install ......... order ......... line (please read the precautions on the back before filling out this page) 574741 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 5 2. Description of the invention () To the extent of the quantization offset. One of the excellent materials of the present invention, 3 + fixed point is just to provide a detection chart of a frame-shaped mask.
案，其係由兩組圏案所組成，其中第-組圖案係配置在U 型框佈局之右下端’而第二組圖案則配置在U型框佈局之 左上端。以上述之π k 《 框光罩進行步進式曝光後，進行顯 景’後檢測’直接目視第一組圖案以及第二組圖案所形成之 接合圖案，而可以輕易檢查出圖案轉移是否成功。若有偏 移現象’則可由接合圖案判斷其偏移量。 本發月之另優點就是在提供一種U型框光罩之檢測 方法，其係利用特別設計之檢測圖案來檢查轉移圖案，並 將兩組圖案構成之檢測圖案分別佈植在U型框光罩之u型 框的右下端以及左上端。經曝光以及顯影&，即可利用兩 組圖案所構成之接合圖案進行檢查。因此，本發明之檢測 方法相當容易，不但不須運用到額外的裝置，更不會增添 製程的複雜度。 本發明之再一優點就是因為本發明所提供之u型框光 罩之檢測圖案及檢測方法，可即時檢測出第一層材料層之 圖案轉移的情形，並可馬上根據檢測所得之結果進行機台 程式以及步進尺寸的修正。因此，可有效提高製程的可靠 度，達到提升產品品質以及改善製程良率的目的。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 19 本紙張尺度適用中國國家標準(CNSM4規格(210X297公釐) '~ ---' ...........裝.........訂.........線 (請先閲讀背面之注意事項再塡、寫本頁) 574741 A7 B7 五、發明説明（） 變或修飾，均應包含在下述之申請專利範圍内。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 20 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐)The scheme is composed of two sets of schemes, in which the first set of patterns is arranged at the lower right end of the U-shaped frame layout and the second set of patterns is arranged at the upper left end of the U-shaped frame layout. After performing stepwise exposure with the above-mentioned π k "frame mask, perform the post-detection of the scene to directly visualize the bonding patterns formed by the first group of patterns and the second group of patterns, and you can easily check whether the pattern transfer success. If there is a shift phenomenon ', the amount of shift can be judged by the bonding pattern. Another advantage of this month is to provide a U-frame mask detection method, which uses specially designed detection patterns to check the transfer pattern, and the detection patterns composed of the two sets of patterns are respectively planted in the U-frame light. The lower right and upper left ends of the u-shaped frame of the cover. After exposure and development &, a joint pattern composed of two sets of patterns can be used for inspection. Therefore, the detection method of the present invention is quite easy. It does not need to use additional equipment, and it does not increase the complexity of the process. Another advantage of the present invention is that the detection pattern and detection method of the u-shaped frame mask provided by the present invention can detect the pattern transfer of the first material layer in real time, and can immediately perform the machine based on the detection results. Table program and step size correction. Therefore, the reliability of the process can be effectively improved, and the purposes of improving product quality and improving process yield can be achieved. As will be understood by those familiar with this technology, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Efficacy 19 This paper size applies the Chinese national standard (CNSM4 specification (210X297 mm) '~ ---' ........... install ......... order ... ..... line (please read the precautions on the back before writing this page) 574741 A7 B7 V. Description of the invention () Changes or modifications should be included in the scope of patent application below. (Please read the back first Please fill in this page before printing.) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. 20 This paper size applies to China National Standard (CNS) A4 (210X 297 mm).