TW573362B - Two layer mirror for LCD-on-silicon products and method of fabrication thereof - Google Patents

Description

573362 V. Description of the invention (1)

[Field of the invention J This invention — # + si 1 icon) of the device ^, the second is related to the liquid crystal display on silicon (LCD-on-layer mirror liquid crystal ^ indication in ^ f is particularly relevant-a kind of The method of manufacturing the pixels on the background of the invention [7]. A liquid crystal display is a silicon mirror that reflects light, and the top metal layer of the pixel is a step electrode. Aluminum is usually used: The ash that controls the top liquid crystal display material is compatible with integrated circuit manufacturing. 丄 Because it has a high reflectivity, and its crystal grains are usually too large, and the inferior layer is too thick (&gt; 2〇_) , Then its Angstrom), then the light revolves around the spleen to reflectivity. If the aluminum layer is too thin (<2 0 0 0 transistor operation. Moreover, the hole under the effect of &amp; 7 due to photoelectric effect will usually be produced on the layer: an electrical connection of the top metal pixel Interposer

The beauty application filed by the Klm person is that the method of forming a plurality of silicon-on-insulator patents No. 5, 486, 485 illustrates a method of using a transistor in a reflective gull (“sllicon-〇n_insulator”. ", In the pattern under the flat reflective surface

In the United States, Kim et al. Applied a three-characterization step to manufacture liquid a 5, 946, 547, which illustrates a method for making a 'rt device when a liquid crystal display device is manufactured. When the reflection type is on the opposite side of the conductive layer after the daylight, the reflection layer such as Ming can be damaged by the shape pixel electrode. On the back of the substrate to avoid light penetration

Miyawaki et al. Applied a method for manufacturing an image display device.

573362

V. Description of the invention (2)) The transistor and the interconnection layer are formed at Mθ a ^ ^ ^ ^ 2 on the insulating layer passing through the liquid crystal layer (near the surface of the other insulating layer of the liquid crystal layer) In order to provide a u layer near the transistor, it is allowed to increase the %% plus the opening ratio, reduce the interaction between adjacent images, and increase the S / N ratio.

U.S. Patent No. 5,471,330, filed by Sarma, describes a liquid crystal display pixel and a method for forming the same, where each = a thin film transistor with a pixel electrode. The silicon doping is completed; the conductivity and light transmittance of the silicon of the pixel electrode are sufficiently increased. 2: The tin oxide (IT0) layer is not required for this pixel electrode. [Summary of the Invention] Therefore, an object of the present invention is to provide a pixel on a liquid crystal display on Shi Xi, and a method for manufacturing a pixel on a liquid crystal display on Shi Xi using a thin inscription layer.

Another object of the present invention is to provide a pixel of a liquid crystal display device on Shi Xi, and a pixel of a liquid crystal display device having a flat upper surface which is not affected by any defects in the underlying via holes. Method Two Another object of the present invention is to provide a pixel of a liquid crystal display on Shi Xi, and to produce a liquid crystal display having an aluminum mirror surface with increased reflectance by depositing a thin aluminum layer with fine grains. Method for pixels on silicon 0 Another object of the present invention is to provide pixels on a liquid crystal display device on silicon, and a method for manufacturing a mirror layer for preventing light from penetrating through aluminum and avoiding photoelectricity.

Page 5-~-573362 Five-effect method Description of the invention (3) _ It should affect the LCD of the bottom transistor interface. The resolution of the pixels on the evening. Another object of the present invention is to provide a liquid crystal display, and a method for manufacturing a graphic display on silicon, which is allowed to fall on the pixel. This method is used to increase the amount of liquid pictures / shadows. There are larger and / or clearer other purposes that will be revealed below. It has been found that the above and other objects of the present invention can be, in particular, a substrate system having an upper stone layer is provided. Yakumo Yoshiyuki is formed in this silicon layer. An opaque conductive layer is filled with vias and vias. The opaque conductive layer is deposited on the opaque conductive layer and is deposited on the opaque conductive layer, so as to form a liquid pixel device of ^ 7J \ 3§ jh rjh μ. In addition, the via hole can be formed by a metal deposition process and a deposition method of theta bismuth. Before the deposition of the reflective layer, an opaque layer was deposited and flattened. A liquid crystal display was developed on silicon ^ ^ ^ / The human heart group Su Mengjin has a substrate with an upper silicon layer. The upper The silicon layer is composed of a plug and a non-transparent conductive material. A flat opaque layer φ is formed on the upper silicon layer and the opaque conductive plug, and a flat anti-L, 'on the flat opaque conductive layer. "Brief description of 糸 located in the drawing] The characteristics and advantages of the 里 JS # surface on the silicon # 里 〜 衣 罝 on the silicon for the liquid crystal display according to the present invention and the method for manufacturing it will be improved by the following cooperation It is clearly understood that the same reference numerals represent the elements, areas and parts of the inch map, as well as the similar or similar

573362 V. Description of the invention (4) [Brief description of drawing number] 6 Dielectric metal dielectric layer 8 Interconnect 1 0 Substrate 1 1 Dielectric metal dielectric 1 2 Dielectric hole 1 4 Barrier layer 1 4 a Mirror surface 1 4 b Mirror surface 1 6 Conductive layer 1 6 a Opaque guide 1 6 b Opaque guide 1 8 Depression 2 0 Surface 2 0 0 Substrate 2 0 2 Via hole 2 0 4 Depression 2 0 6 Barrier metal layer 2 0 8 Barrier layer Depression 2 1 0 Aluminum layer 2 1 2 Aluminum layer depression 2 1 4 Optical interface layer 2 1 6 Depression 2 2 Reflective layer _

Page 7 573362 V. Description of the invention (5) 2 2 a Part 2 2 b Part 2 4 Surface 2 4 a Mirror 2 4 b Mirror 2 6 a Mirror element 2 6 b Mirror element 2 8 Optical interface layer 3 0 Follow-up Last name engraved 3 2 a Mirror 3 2b Mirror [Detailed description of the preferred embodiment] Unless otherwise specified, all structures and layers can be formed or completed by conventional methods well known in the art. [Method well known to the inventors] Fig. 1 illustrates a method for forming a mirror element on a silicon of a liquid crystal display known to the inventors. A via hole 202 is formed in the upper layer of silicon dioxide on the substrate 200. The via hole 20 2 has a dent or depression 20 4 caused by the formation of the via hole 20 2 in the upper surface thereof. The depression 204 is transferred to the barrier metal layer 206 formed on the substrate 200 and the via hole 202, and becomes the barrier layer depression 208. The aluminum layer 2 10 formed on the barrier layer 206 also has a barrier layer recess 208 that becomes an aluminum layer recess 2 1 2. ^ Optical interface layer 21 formed on the exposed edge of the aluminum layer and above the upper surface

573362

The surface layer of the recessed 2 1 6 aluminum layer also has the same 212 as the optical world. The surface of the surface is marked by the surface element structure, that is, the structure of the grains: the present invention is formed by two or more elemental metals such as field effect, and the barrier layer of titanium is thick. Not = the beams are all made by the LCD on the mirror element on Shi Xi. However, in the mirror of this liquid crystal display on silicon, the right aluminum layer 2 10 is too thin, that is, less than about 2000 angstroms, and the light beam of A will penetrate the Ming layer 210. In addition, if the ming layer 21 is too thin, and is 2000 angstroms, the light beam labeled f will be scattered due to the larger size. For this ice, the force σ a ^ affects the reflection i. The layer depression 212 will be based on the preferred embodiment of the depression.] As shown in FIG. I, FIG. 5 and FIG. 5, the manufacturing system of the liquid crystal display: mirror pixels is exemplified. Of course, only two pixels can be manufactured according to the present invention. Figure 6 shows a cross-sectional view of a metal dielectric layer 6 and an interconnect 8. The w-layer 6 and the interconnection system are located above a substrate having a device (FETs and wires for interconnecting the device). As shown in FIG. 2, a metal dielectric (_111 is etched, and the interlayer hole 12 is formed. The barrier layer 14 is formed on the surface of the intermetal dielectric (IMD) layer n to cover the wall surface of the interlayer hole 12. The barrier layer 4 is preferably a metal layer composed of titanium / nitrogen, and may also be composed of cobalt nitride. The metal barrier has a thickness of about 200 to 2000 angstroms, and preferably 600 to 100. 〇〇Å transparent conductive layer (such as an intermediate conductive layer) (^ was formed in 573362 V. Description of the invention (7)

The substrate 10 is filled with via holes 12 which are lined with a barrier metal. The conductive layer 16 is an intermediate conductive layer that is sufficiently hard to be processed by chemical mechanical polishing (CMP) or other planarization processes, and is also dense enough to prevent light from penetrating it. An opaque conductive layer 16 having a thickness of about 5000 to 30000 angstroms is deposited on the surface of the IMD layer 11, and preferably it has a thickness of about 800 to 150000 angstroms on the IMD layer 1 1 On the surface. The conductive layer 16 may be composed of tungsten, titanium, titanium nitride, chromium, silver, or nitride, and is preferably tungsten. The conductive layer 6 is not composed of aluminum. The opaque conductive layer 16 may be a single material 'deposited in a step as shown in FIG. In addition, as shown in FIG. 6, the opaque conductive layer is composed of a lower plug 15 and an upper opaque conductive layer 16a, 16b. The lower plug 15 and the opaque conductive layer may be composed of the same material or two different materials. A first layer will be filled with the interposer. Holes 1 2 'lined by the barrier layer to form the plug 15. Secondly, the inventor deposited a second layer (thickness as described above) on the dielectric metal dielectric layer Η, and blanket-typely covered the dielectric metal dielectric layer and the plug. • In addition, the intermediate conductive layer 16 includes a recess 18, which is transferred to the recess (not shown in the figure) formed on the interlayer hole 丨 2 caused by the filling of the interlayer hole 12. As shown in FIG. 3, in an important step of the present invention, the conductive layer 16 is preferably polished and flattened by chemical mechanical polishing, recessed 18 and forming an optically flat upper surface 20 (preferably about 50). 0 to 2000 angstroms). % The thin reflective layer 22 is then deposited on the optical flatness of the conductive layer 16 573362 V. Description of the invention (8) The upper surface 20 is up to a thickness of about 2000 angstroms. It is composed of gold, and it should be noted that the optical properties of the upper surface 20 are shown in Fig. 4. The similar part of the reflective layer 22 to the conductive layer is 1 4 a 3. For example, a photoresist layer is engraved at 30 places on the device and is reflected as shown in Figure 5 and protects the interface layer 28. The product can be formed on the silicon by transparent coating of the topmost layer such as 0N (ONNON, ONONON) Although the present invention is intended to limit the thickness of the hair from 300 to 200 Angstroms, and preferably about 1,000, the reflective layer 22 can be made of Shao, Ming copper alloy or Ming; ε copper is aluminum. The upper surface 24 of the reflective layer 22 will maintain the flatness of the conductive layer 16. 'The device is characterized to form an upper metal layer, which is 16 (becoming a separate mirror pixel 26a, 26b), 14b; 20a, 20; 22a, 22b; 24a, 24b (not shown in the figure) can be deposited and subsequently described. The photoresist layer is then stripped and removed. 'The optical interface layer 28 can then be deposited to enhance the exposed Mirror surfaces 24a, 24b; 32a, 32b. Optics (that is, an oxide layer is located on a nitride layer), five more ON pairs or other can enhance the reflection of light. This completes the double mirror liquid crystal display of the present invention. = Exemplary embodiments have been exemplified and illustrated, but they are not 'the scope is defined by the scope of the following patent applications

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Claims (1)

573362 VI. Scope of patent application A method for manufacturing a pixel device for a liquid crystal display on silicon, comprising the steps of: an opaque conductive charge having an upper layer and an interlayer hole; the opaque conductive and reflective The layer is sunk 2 · If the patent application layer is selected from the crane and titanium groups 3 · If the patent application is, aluminum copper alloy or 4 · If the patent application is transparent conductive layer about 5 · If the patent application is transparent conductive layer Approx. 6 · If the patent application is transparent, the conductive layer system is 7 · If the patent application is as thick as 2000 Angstroms. 8 · If the patent application range is up to 2000 Angstroms. 9 · If a patent-applicable substrate is provided; formed in the silicon layer; an electrical layer is deposited on the silicon layer to planarize the via hole filling layer; and deposited on the opaque conductive layer. The method around item 1, wherein the opaque conductive, titanium nitride, chromium, silver, silicon, and nitride are selected. The method of item 1, wherein the reflective layer is selected from the group consisting of an aluminum-aluminum-silicon-copper alloy. The method surrounding item 1, wherein the flattened thickness is not 500 to 500 Angstroms. The method around item 1, wherein the flattened thickness is not 500 to 2000 Angstroms. The method around item 1, wherein the planarized surface is not planarized by chemical mechanical polishing. The method around item 1, wherein the reflective layer is about 300. The method around item 1, which applies the reflective layer, about 100%. The method around item 1, wherein the reflective layer is made of aluminum. Page 13 573362 6. Scope of patent application It is composed of about 300 to 2000 Angstroms thick. 1 · The method according to item 1 of the scope of patent application, wherein the reflective layer is composed of aluminum and is about 100 to 2000 Angstroms thick. 1 1 · The method of claim 1 includes the steps of forming a barrier layer on the silicon layer and lining the via hole before the opaque conductive layer is deposited. 1 2 The method according to item 1 of the scope of patent application, comprising the step of forming an optical interface layer on the reflective layer. 1 3 · The method according to item 1 of the scope of patent application, including the step of forming an optical interface layer on the reflective layer; the optical interface layer is selected from the group consisting of ON and multiple # layers ON. 14 · A method for manufacturing a pixel device for a liquid crystal display on silicon, comprising the steps of: a substrate having an upper silicon layer is provided; a via hole is formed in the silicon layer; a plug is formed In the via hole, it is composed of a first opaque conductive layer; a second opaque conductive layer is deposited on the silicon layer and the first opaque conductive layer plug; the opaque conductive layer is planarized ; And a reflective layer is deposited on the opaque conductive layer. 15 · The method according to item 14 of the scope of patent application, wherein the first opaque conductive layer is selected from the group consisting of tungsten, titanium, titanium nitride, chromium, silver, cobalt, and cobalt nitride, and The second opaque conductive layer is not Page 14 573362 six 16 17 18 19 20 21 22 23 24 25 26 The scope of patent application is the same as that of the first network, silver, if applied for aluminum, copper, aluminum, etc. If applying for up to 2000 angstroms, for example, for applying up to 2000 angstroms, for example, for applying for a conductive layer, and for applying a conductive layer via, for example, apply for a transparent guide, for example, apply for a opaque conductive layer, and The method of item 14 in the range of the group consisting of cobalt and cobalt nitride, in which the method of item 14 in the range of group consisting of gold or onyx copper alloy, wherein the conductive layer is about 500 to 5 0 0 0 Aihou &lt; Ligan 14 method, in which the conductive layer is about 500 to 2 0 0 Ai thick t method in the 14th range, wherein chemical mechanical polishing and planarization . The method of benefit range 14 is thick. The method of profit range item 14 is thick. The method of item 14 of the profit range is about 300 to 2000 angstroms. The method of the range 14 is about 100 to 2000 Angstroms. The method of the range 14 is about 100 Å. Before the deposition, a barrier layer is formed at this step. The method of item 14 of the effective range, wherein the electrical layer is composed of the same material. The method of item 14 of the effective range includes, titanium, and the reflection group is selected. # 中 此 反射 Where the reflection is, the reflection includes the first silicon nitride layer on the silicon layer, and the titanium layer can be selected. Tanned Tan Tanned Opaque Layer About 30 0 Layers About 1000 Layers Made In Lu Layers Made By An Opaque And Lined With The Second Interface Layer Page 573 362 Step on the reflective layer. 27. The method according to the item "in the scope of patent application, including the step of forming an optical interface layer on the reflective layer; the optical interface layer is selected from the group consisting of ON and multiple ON. 28.-a type of liquid crystal display in silicon The above device includes: a substrate having an upper silicon layer; a plug located in the upper silicon layer, the plug consisting of an opaque conductive material; a flat opaque conductive layer, which is deposited on the upper silicon layer Layer and the opaque conductive layer plug; and a flat reflective layer on the flat opaque conductive layer. 29 The device according to item 28 of the patent application, wherein the opaque conductive plug is made of tungsten, titanium, nitrogen Titanium, chromium, silver, cobalt, and cobalt nitride are selected from the group, and the flat, opaque conductive layer is different from the opaque conductive plug, and consists of tungsten, titanium, titanium nitride, chromium, Silver, Ming, and Cobalt Nitride are selected. 30. The device of claim 28, wherein the opaque conductive plug is integrated with the flat opaque conductive layer, and is composed of Yan, titanium, titanium nitride, chromium, silver, cobalt, and cobalt nitride are selected from the group of materials selected from the group consisting of tungsten, titanium, titanium nitride, chromium, silver, cobalt, and cobalt nitride. 31. The device according to item 28 of the patent application, wherein the reflective layer can be selected from the group consisting of wire, copper alloy or aluminum-silicon-copper alloy. 32. The device according to item 28 of the patent application, wherein the surface is flat Not % 16 I I &quot; 1-573362 6. Scope of patent application The transparent conductive layer is about 500 to 5000 Angstroms thick. 3 3 · The device according to item 28 of the scope of patent application, wherein the planarized opaque conductive layer is about 500 to 2000 Angstroms thick. 34. The device according to item 28 of the scope of patent application, wherein the flat opaque conductive layer is planarized by chemical mechanical polishing. 35. The device according to item 28 of the patent application range, wherein the reflective layer is about 300 to 2000 angstroms thick. 36. The device according to item 28 of the scope of patent application, wherein the reflective layer is about 100 to 2000 angstroms thick. 37. The device according to item 28 of the patent application range, wherein the reflective layer is composed of aluminum and is about 300 to 2000 angstroms thick. 38. The device according to item 28 of the scope of patent application, wherein the reflective layer is composed of aluminum and is about 100 to 2000 Angstroms thick. 39. The device of claim 28, including a barrier layer on the silicon layer and lining the via hole. 40 · The device according to item 28 of the scope of patent application includes an optical interface layer on the reflective layer. 41. The device according to item 28 of the scope of patent application, including an optical interface layer on the reflective layer; the optical interface layer is selected from the group _ that includes ON and multiple ONs. Page 17