573147 A7 五、發明說明（， 本發明係關於一種薄膜電晶體顯示器面板及其製法， 係提供製程簡單且具良好光、電特性之顯示器面板製法。 4膜電θ曰體顯示器（TFT-display)與其他薄膜電晶體 顯不器最主要相異處在於使用具有主動矩陣式驅動電路的 面板’该主動矩陣式驅動電路係形成於薄膜電晶體顯示器 的其中一玻璃基板上，稱為薄膜電晶體面板（TFT—display Pannel)，其中每一薄膜電晶體可分別構成顯示器之一圖 素，藉由控制該圖素顯示現明亮狀態。 又，薄膜電晶體面板依薄膜材料不同可分為非晶矽及 多晶矽薄膜電晶體面板兩種，而其中以多晶矽材料形成電 ^膜電晶㈣電氣特性較佳，如#電晶體的電子遷移率將 是形成在非晶矽材料上的一百倍左右，因此，目前高階薄 膜電晶體面板大多使用多晶矽材料，以供薄膜電晶體形 成。 早期製作薄膜電晶體面板，因限制玻璃材質的基板無 法承受高溫製程，因此，先於玻璃基板上沈積一非晶矽 膜，再進行雷射退火（Excimer Laser Annealing; EL幻 製程，使該非晶矽材料結構結晶化以形成多晶矽膜，再進 订薄膜電晶體生成製程，然而，該雷射退火製程因玻璃基 板無法承受過高的熱度，所形成的多晶矽膜的晶粒半徑較 小且均勻性差，因此，造成表面粗糙度高，容易令生成電 晶體的閘極絕層產生洩漏電流，而降低薄膜電晶體面板的 良率。 是以，為改善前揭缺點有人致力於製作高品質的多晶 $氏張尺度刺中關緖準（CNS)A4規格（21ϋ χ 29/公爱） -------- (請先閱讀背面之注意事項再填寫本頁) -------訂---------線· 573147 A7 五、發明說明（> ) =五：的則提出整個薄膜電晶體面板製 面板製法，其包括下列^為目則―種可施行的薄膜電晶體 提供一第一基板（5〇); 形成一透明絕緣層（51)於第一基板（5〇)上. :成-半導體薄膜（52)於一第一透明 5 =正面’係用以定義源、汲極（5川（52 動區（未標號）於半導體薄膜（5 2 ). 膜（5形成-第二:明絕緣層（53)，係覆蓋該半導體薄 極絕緣層（未"f應+導體薄膜（5 2 )的部份作為閑 極（56)仏虎）’又該閉極絕緣層上形成有一間極電 t成第-金屬層（5 8)，係形成於該間極電極（$ b >»之上，作為掃描金屬線之用； 『成-第三透明絕緣層（54) ’係 形成-保護層（55)，係覆蓋於第三透明絕緣層 上’供晝素電極（5 7)形成於其上，該晝素電 極（5 7)係與第二金屬層（5 9)電連接； …以上’因該第一基板（5 〇 )可形成良好電 性 =體π件（薄膜電晶體、儲存電容），故可形成可靠度 佳的驅動電路’以下，則進一步說明該等驅動電路如何轉 载至適合的基板上，進而構成一完整的薄膜電晶體顯器示 (請先閱讀背面之注意事項再填寫本頁) ·%·573147 A7 V. Description of the invention (The present invention relates to a thin film transistor display panel and a manufacturing method thereof, and provides a manufacturing method of a display panel with a simple manufacturing process and good light and electrical characteristics. 4 film electric θ-body display (TFT-display) The main difference from other thin film transistor displays is the use of a panel with an active matrix drive circuit. The active matrix drive circuit is formed on one of the glass substrates of a thin film transistor display and is called a thin film transistor panel. (TFT—display pannel), in which each thin film transistor can constitute a pixel of the display, and the pixel is controlled to display the bright state. Moreover, the thin film transistor panel can be divided into amorphous silicon and There are two types of polycrystalline silicon thin-film transistor panels. Among them, the polycrystalline silicon material is used to form the electro-membrane transistor. The electrical characteristics are better. For example, the electron mobility of the transistor will be about one hundred times that of the amorphous silicon material. Therefore, Currently, most high-level thin-film transistor panels use polycrystalline silicon materials for thin-film transistor formation. Early production of thin-film transistor panels Due to the limitation of glass substrates that cannot withstand high temperature processes, an amorphous silicon film is deposited on the glass substrate and then laser annealing (Excimer Laser Annealing; EL) is performed to crystallize the amorphous silicon material structure to form polycrystalline silicon. Film, and then the thin film transistor production process is ordered, however, because the laser annealing process cannot withstand excessive heat, the polycrystalline silicon film formed has a small crystal radius and poor uniformity, resulting in high surface roughness It is easy to cause leakage current in the gate insulation layer of the transistor, and reduce the yield of the thin-film transistor panel. Therefore, in order to improve the previous defects, some people are committed to making high-quality polycrystalline silicon scales. Standard (CNS) A4 (21ϋ χ 29 / Public Love) -------- (Please read the precautions on the back before filling out this page) ------- Order ------- -Line · 573147 A7 V. Description of the invention (>) = 5: The method of making the entire thin-film transistor panel is described, which includes the following ^ for the purpose of providing a first substrate for a thin-film transistor that can be implemented ( 5〇); forming a transparent insulating layer 51) on the first substrate (50) .: Cheng-semiconductor film (52) on a first transparent 5 = front side 'is used to define the source and drain (5 chuan (52 active region (not labeled) on the semiconductor) Thin film (5 2). The film (5 is formed-the second: the bright insulation layer (53), which covers the semiconductor thin electrode insulation layer (not " fying + conductor thin film (5 2) as the idler electrode (56 ) 仏 虎) 'An inter-electrode t-metal layer (5 8) is formed on the closed-pole insulating layer, which is formed on the inter-electrode ($ b > ») for scanning metal lines. "The formation-third transparent insulating layer (54) 'is a formation-protective layer (55), which covers the third transparent insulating layer.' A day element electrode (5 7) is formed thereon, and the day element electrode ( 5 7) is electrically connected to the second metal layer (5 9);… above 'because the first substrate (50) can form good electrical properties = body π pieces (thin film transistors, storage capacitors), it can form a reliable The following is a good description of the degree of driving circuit. How to drive the driving circuit to a suitable substrate to form a complete thin film transistor display (please read the back first Notes on filling out this page) *% *
------訂---------線I -I J I · 本纸張尺度適用中國國家標準（CNS)A4規格⑵〇x 297公爱）------ Order --------- Line I -I J I · This paper size is applicable to China National Standard (CNS) A4 specification⑵〇x 297 公 爱)
面板： ) 鍵合一第二基板（6 鍵合該第二基板（6 0) 移除第一基板（5 〇 鍵合一透明基板（6 移除第二基板（6 〇 露，如第五圖D所示； 〇 )，係於保護層（5 7)上再 ’如第五圖B所示； )，如第五圖C所示； 1 ); )，使該圖素電極（5 7 )外 以至此，完成一具有良好電氣特性之薄膜電晶體顯示哭 =板的製作，由於_電路另外於適合成長半導體元件的 、一基板上預先製作完成，再移轉回透明基板或反射型基 反（第二基板）上，亦即，先於石夕基板（第一基板）上形 成之半導體元件轉移至玻璃或塑膠基板（第二基板）上， 7玻璃或塑膠基板上擁有與在碎基板上相同特性之半導體 兀件’以及擁有朗透光性或_之特透光性及摺曲性， 而構成良好光電特性之薄膜電晶體顯示面板。 上述薄膜電晶體顯示面板製法雖可製作高可靠度的驅 動電路，然而，於實際施行仍有缺點，如下列所述··又 1 ·步驟複I隹：至少需使狂基板達到轉载的功效。 2·光學元件無法與半導體元件整合於第二基板上， 前揭顯示器面板的透明電極形成於該第二基板的最上端， 無法整合光學元件於同一基板上，故僅能形成於另一美板 上，因此，當顯示器面板模組組裝時，兩基板即衍生對位 準度的問題。 3 ·畫素電極之外露面為不平坦面··由於晝素電極經 本纸張尺度適用中國國家標準(CNS)A4規格（210 x 297"公爱） 573147 A7 -、發明說明 由m刻製程形成’故其表面無法達到完全的平坦 面，故會產生尖端放電造成畫面出現不正常光點 嚮顯示品質。 〜 是以’上述製程仍存在製程步驟複雜、高成 題，不具實用性，故而此種轉載方式的薄膜電晶體顯示二 面板應可再進一步改善，以降低其製程成本。 為此’本發明的主要目的係提供一種低成本且 的薄膜電晶體顯示器面板製法，有效地將半導體元件與 學70件製㈣合實施，無後續精密對準光、電學元件基板 ㈣題，X，本發明之畫素電極具有平坦的外露表面:可 提南晝面顯示品質。 欲達上述目的所使用之主要技術手段係將晝素電極直 接形成在-第-基板的上端面，於其上進行半導體元件製 程，待完成良好電氣等性之半導體元件後，可再向上依序 形光學元件（如色轉換層、彩色據光片、偏光層等），再 取一第二透明基板覆蓋於基板的上端面，爾後，將第一A 板移除使晝素電極直接外露，故該晝素電極 二 光、顯影及_等黃光製程以開出晝素電極/因此，= 素電極具有相當平坦的外露面；因半導體元件完成後，因 旦素電極於下層’故上半導體元件上層可繼續製作光 件，因此’無另外鍵合光學元件之基板的對準問題，是 以，本發明係為-僅具有簡單製程且低成本的製程。 為使貴冑查委員能進一步瞭解本發明整 架構’兹附圖式說明，分述如后： 之“及 ^氏張尺度規格（210 x @公楚· ^-9--------^---------線 (請先閱讀背面之注意事項再填寫本頁)Panel:) Bond a second substrate (6 Bond the second substrate (60)) Remove the first substrate (50 Bond a transparent substrate (6 Remove the second substrate (60)), as shown in Figure 5 As shown in D; 〇), tied to the protective layer (5 7) and then 'as shown in the fifth figure B;), as shown in the fifth figure C; 1);), the pixel electrode (5 7) So far, a thin-film transistor display panel with good electrical characteristics has been completed. Since _circuit is additionally fabricated on a substrate that is suitable for growing semiconductor elements, it is then transferred back to a transparent substrate or reflective substrate. (Second substrate), that is, the semiconductor element formed on the Shixi substrate (the first substrate) is transferred to the glass or plastic substrate (the second substrate). A semiconductor element having the same characteristics and a thin-film transistor display panel having excellent light-transmitting properties or special light-transmitting properties and bending properties constitute a good photoelectric property. Although the above-mentioned thin film transistor display panel manufacturing method can produce a highly reliable driving circuit, there are still disadvantages in practical implementation, as described below .... 1) Steps are repeated. I: At least it is necessary to achieve the effect of reprinting the substrate. . 2. The optical element cannot be integrated with the semiconductor element on the second substrate. The transparent electrode of the front display panel is formed on the uppermost end of the second substrate. The optical element cannot be integrated on the same substrate, so it can only be formed on another beautiful board. Therefore, when the display panel module is assembled, the two substrates cause a problem of alignment. 3 · The exposed surface outside the pixel electrode is uneven. · As the day electrode is applied to the Chinese National Standard (CNS) A4 specification (210 x 297 " public love) 573147 A7 through the paper scale, the invention description is formed by the m-engraving process. 'Therefore, the surface cannot reach a completely flat surface, so a tip discharge will occur, causing the screen to display abnormal light spots to the display quality. ~ It is because the above-mentioned process still has complicated process steps and high problems, and it is not practical. Therefore, the thin film transistor display panel of this reprinting method should be further improved to reduce its process cost. To this end, the main purpose of the present invention is to provide a low-cost and thin-film transistor display panel manufacturing method, which effectively combines semiconductor components with 70 components, without subsequent precision alignment of optical and electrical component substrate problems, X The pixel electrode of the present invention has a flat exposed surface: it can improve the display quality of the southern day. The main technical means used to achieve the above purpose is to directly form a day element electrode on the upper end surface of the -th-substrate, and perform a semiconductor element manufacturing process thereon. After the semiconductor element with good electrical properties is completed, it can be sequentially upward. Shape optical element (such as color conversion layer, color light sheet, polarizing layer, etc.), and then take a second transparent substrate to cover the upper end surface of the substrate, and then remove the first A plate to expose the day element directly, so The daylight electrode has two light, development, and other yellow light processes to open the daylight electrode. Therefore, the light electrode has a relatively flat exposed surface. After the semiconductor device is completed, the semiconductor device is on the lower layer because of the semiconductor electrode. The upper layer can continue to make optical parts, so 'there is no problem with the alignment of the substrate to which the optical element is additionally bonded. Therefore, the present invention is a process with only a simple process and a low cost. In order to allow the investigating committee members to better understand the overall structure of the present invention, the description of the drawings is described as follows: "and ^ 's Zhang scale specifications (210 x @ 公 楚 · ^ -9 -------- ^ --------- line (please read the precautions on the back before filling this page)
(1 1 )保護層 (1 3)畫素電極 (1 4 a )閘極絕緣層 (16)絕緣層 (1 8)外接電極 (2 0)第二基板 (5 1 )第一透明絕緣層 (5 2 1 )源極 (5 3 )第二透明絕緣 (5 5 )保護層 (5 7)透明電極 (5 9 )第二金屬層 (6 1 )透明基板 層 573147 五、發明說明（7) (一） 圖式部份：(1 1) Protective layer (1 3) Pixel electrode (1 4 a) Gate insulating layer (16) Insulating layer (1 8) External electrode (2 0) Second substrate (5 1) First transparent insulating layer ( 5 2 1) Source electrode (5 3) Second transparent insulation (5 5) Protective layer (5 7) Transparent electrode (5 9) Second metal layer (6 1) Transparent substrate layer 573147 V. Description of the invention (7) ( A) Schematic part:
第一圖A〜D :係太八aD ’、务月第一較佳實施例的流程圖。 第二圖：係本㈣第二較佳實施例。 第二圖·係本發明證一 弟二較佳實施例，其揭示光學元件為偏 光片的結構。 第四圖：係本發明第四較佳實施例。 第五圖A〜D :得抑田切 乐白用溥膜電晶體顯示器的流程圖。 (二） 圖號部份： (10)第一基板 (12)半導體薄膜 (14)透明絕緣層 (1 5 )閘極電極 (1 7)保護層 (19)光學元件 (5 0)基板 (5 2)半導體薄膜 (5 2 2 )汲極 (5 4)第三透明絕緣層 (5 6)閘極電極 (58)第一金屬層 (60)第二基板 本發明係提供一種低成本薄膜電晶體顯示 法，並且具有良好光、電特性的光、電㈣（高反= 率、無漏電流）。 卞遷矛夕 本紙張尺度_巾晒家料(5¾)A4規格(2107^^7 (請先閱讀背面之注意事項再填寫本頁) > --------訂·-------1 573147 A7 五、發明說明（ 首先凊參閱第一圖 雷曰㈣旨千# 係為本發明之一薄膜 電日日體顯不态面板製程，包括有·· 提供一基板（1 〇 )，直 等材質基板； -了為矽、塑膠、玻璃、石英 形成一保護層（T T 1 ^ 、 其Γ )，係形成保護層（1 1 )於該 1Τ( ?上端面，其材質可為氧切、氮切、 D r、 ）或類碳鑽石（Di_“ike Carbon; DLC);此外，亦可作為配向層之用； 形成一半導體薄臈（1 2 )，係於該保護層（工丄） 的上端面’其中該半導體薄膜（12)上定義出源極、汲 極及主動區（未標號）； 形成-閉極絕緣層（14a)，係先以一透明絕緣層 (1 4) t盍+導體薄膜（丄2) ’再蝕刻該透明絕緣層 (14)，僅保留對應半導體薄膜（12)的透明絕緣層 (14)，即為閘極絕緣層（14〇 ，又，該閑極絕緣 層（1 4 a )上形成—閘極電極（丄5 )，至此構 晶體元件； 形成-晝素電極（"），係於電晶體元件的保護層 (1 1 )上形成一透明電極，供作晝素電極（1 3 )之 用； 形成一絕緣層（1 6 )，係覆蓋電晶體元件及晝素電 極（1 3 )上； 1 ” 連接晝素電極（13)與半導體薄膜（12)，係以 黃光製程對絕緣層（1 6 )及閘極絕緣層（丄4 a )所對 --------II----- (請先閱讀背面之注意事項再填寫本頁) 573147 A7 五、發明說明（p) )位置開出接觸窗口 應半導體薄膜以及畫素 再以金屬製程連接源極與畫素電極（1 3) · 〈請先閱讀背面之>i意事項再填寫本頁} 形成一保護層（1 7 )，係覆蓋於該絕緣層（6 ) 之上，以形成一平坦面，如第丄圖B所示，· 形成光學元件（1 9 )於保護層（工7)之上，如第 1圖所示，係可為各種色轉換層、彩㈣七、偏光片、 增亮片、擴散片等，如1圖6及第三圖所示； 鍵合-第二基板（20)至該頂層的光學元件（1 9 )之上，係以各種鍵合方式將第二基板 人 光學元件("…其中鍵合方式係可為】二: (chrect bonding)、陽極鍵合（an〇dic b〇nding)、低 鍵合（low temperature b〇nding )、中間介質鍵合 (Intermediate bonding )、粘著鍵合（Α(ϊ}ΐαίν: bonding)、雷射熔融鍵合等，又，各種鍵合方式可分為整 接合或選擇性接合’如第1圖C所示； 移除苐I板（1 〇 )，係以研磨或I虫刻方式將該第 -基板（1 0)移除，其中該保護層（i丄）可成為移除 矽基板（10)的界線，以確實消除基板（1〇)，如第 1圖D所示。 上述製法主要將半導體電子元件（如TFT、M0S、 MIM、TFD)於一般半導體製程所使用的矽、玻璃等基板與 咼/亚製私下形成’如此以獲得良好電氣特性之電子元件， 又，光學元件於半導體元件形成後，依照不同電晶體顯示 器（液晶、有機發光二極體或高分子發光二極體）需求， ^纸張尺度適用中國國家標準（CNS)A4規格（21〇 X 2备公爱)----- 五、發明說明（牙） 繼續生成光學元件Γ 1 Q# 即可將光、電元件』體如此， 確對位的功效，又，佥1板（1〇)上，達到精 Λ柄Γ… 素電極（13)儘可能的靠近第- 基板（1 ◦)，當去除第一基板（ 3 (1 3 )即直接外露，毋需進行黃光_程，且^素電極 露面，同時得以降低製程成本。、〃千坦的外 么述第二道步驟的保護層（1 iM Β 反1 0 )徹底研磨去除，爾後，再 ?否保留而去除亦可直接省去此結構，如第： 上：，而電極（18)則直接形成於第一基板（1〇) 再者，本發明可再增加一形成 成賴（⑴步驟之後，亦即，該電 保顧（1 1 )適當位置形成之，供外接電路連接。 :參閱第四圖所示，係為本發明之第 === 冓，其大多結構與第—較佳實_ 絕緣# ( 1 6 )予疋（9 )係直接形成電晶體元件上的 、邑，，表層（16)，而其間無保護層（圖中未示） 它功本發明確實在元件及路未轉移射尤將其 二=元件與光學元件整合於同-基材上，然而 一轉載特定基板上，以使光學元件可輕易盘半導！# 準，又，畫素電極係於進行半導體元件時:、採内‘ 式而形成接近於第-基板位置，待移除第—基板即可 573147The first figures A to D are flowcharts of the first preferred embodiment of Taiba aD ', Wuyue. Second figure: This is the second preferred embodiment of the present invention. The second figure is the first and second preferred embodiments of the present invention, which reveals that the optical element is a polarizer. The fourth figure is a fourth preferred embodiment of the present invention. Fifth Figures A to D: Flowcharts of the Yida Takaku white diaphragm transistor display. (2) Part of drawing number: (10) First substrate (12) Semiconductor film (14) Transparent insulating layer (1 5) Gate electrode (17) Protective layer (19) Optical element (50) Substrate (5) 2) Semiconductor thin film (5 2 2) Drain (5 4) Third transparent insulating layer (5 6) Gate electrode (58) First metal layer (60) Second substrate The present invention provides a low cost thin film transistor Display method, light and electricity with good light and electrical characteristics (high reflectance = no leakage current). The paper size of the relocated spear _ paper towel housework (5¾) A4 size (2107 ^^ 7 (Please read the precautions on the back before filling this page) > -------- Order · --- ---- 1 573147 A7 V. Description of the Invention (First, please refer to the first picture: Lei Qianqian ## This is one of the invention's thin-film electric solar panel display process, including ... 〇), substrates of equal material;-forming a protective layer (TT 1 ^, its Γ) for silicon, plastic, glass, quartz, forming a protective layer (1 1) on the 1T (? Upper end surface, the material can be Oxygen cut, nitrogen cut, D r,) or carbon-like diamond (Di_ "ike Carbon; DLC); In addition, it can also be used as an alignment layer; forming a semiconductor thin layer (1 2), which is attached to the protective layer ( The upper end surface of the substrate), wherein the semiconductor film (12) defines a source electrode, a drain electrode, and an active region (not labeled); a-closed-pole insulating layer (14a) is formed by a transparent insulating layer (1 4 ) t 盍 + conductor film (丄 2) 'Re-etch the transparent insulating layer (14), leaving only the transparent insulating layer (14) corresponding to the semiconductor film (12), which is the gate insulating layer (14〇, and A gate electrode (丄 5) is formed on the idler insulating layer (1 4 a), and the crystal element is formed; and a -day electrode (") is formed on the protective layer (1 1) of the transistor element. A transparent electrode for the day element electrode (1 3); forming an insulating layer (1 6) covering the transistor element and the day element electrode (1 3); 1 "connecting the day element electrode (13) and The semiconductor thin film (12) is a pair of insulating layers (1 6) and gate insulating layers (丄 4 a) which are processed by the yellow light process -------- II ----- (Please read the back Note: Please fill in this page again) 573147 A7 V. Description of the invention (p)) The contact window should be opened at the position. The semiconductor film and pixel should be connected to the source electrode and the pixel electrode by metal process (1 3). > I will fill in this page again on the matter of interest} Form a protective layer (1 7), which is covered on the insulating layer (6) to form a flat surface, as shown in Figure 丄 B, forming an optical element ( 19) On top of the protective layer (work 7), as shown in Fig. 1, it can be various color conversion layers, color VII, polarizers, brighteners, diffusers, etc., as shown in Fig. 6 As shown in the third figure; bonding-the second substrate (20) to the top optical element (19), the second substrate is an optical element (" ... where the bonding method is It can be: two: (chrect bonding), anode bonding (an〇dic bonding), low bonding (low temperature bonding), intermediate bonding (intermediate bonding), adhesive bonding (Α (ϊ } ΐαίν: bonding), laser fusion bonding, etc. In addition, various bonding methods can be divided into integral bonding or selective bonding 'as shown in Figure 1C; Remove the 苐 I plate (1 〇), grinding Or the first substrate (1 0) is removed in an engraved manner, wherein the protective layer (i 丄) can be a boundary for removing the silicon substrate (10), so as to eliminate the substrate (10), as shown in FIG. 1 D. The above manufacturing method mainly forms semiconductor electronic components (such as TFT, MOS, MIM, TFD) on substrates such as silicon and glass used in general semiconductor manufacturing processes, and 咼 / subsystems to form privately such electronic components that have good electrical characteristics, and optical After the semiconductor device is formed, according to the requirements of different transistor displays (liquid crystal, organic light-emitting diodes or polymer light-emitting diodes), the paper size applies the Chinese National Standard (CNS) A4 specification (21 × 2) Love) ----- V. Description of the invention (teeth) Continue to generate the optical element Γ 1 Q #, the optical and electrical elements can be combined so that the effect of the alignment is confirmed, and on the 1 plate (1〇), To achieve the precise Λ handle, the prime electrode (13) is as close as possible to the-substrate (1 ◦). When the first substrate (3 (1 3)) is removed, it is directly exposed without the need for a yellow light process, and the prime electrode Appear at the same time, can reduce the cost of the process at the same time. What ’s the second step of the protective layer (1 iM Β reverse 1 0) is completely ground and removed, and then, if it is retained or removed, the structure can be directly omitted. , Such as: Upper: and the electrode (18) is directly shaped On the first substrate (10), the present invention may further add a formation process (after the step, that is, the electrical protection (1 1) is formed in an appropriate position for external circuit connection .: See the fourth As shown in the figure, it is the first === 冓 of the present invention, and most of its structure is the same as the first-best practice_ Insulation # (1 6) 疋 疋 (9) is directly formed on the transistor element, the surface, ( 16), and there is no protective layer (not shown in the figure) during the process. The present invention does integrate the second component and the optical component on the same substrate, but the component and the optical component are not transferred. In order to make the optical element semi-conductive easily! # Quasi, also, when the pixel electrode is used to carry out semiconductor elements: the "inside" method is used to form a position close to the-substrate, you can remove the-substrate 573147
五、發明說明（ 外露，由於晝素電極的圖案已形成，故毋需經 PI^D及T「:製程，而具有相當平坦的表面，利於0LED、 的顯影品質的曰製作’因f 有效提高薄膜電晶體顯示器 基板，且牛驟疋M ’本發明完全光電元件之製作僅使用二 :且步驟明顯較習知技術簡單，而可相對減少製程成 性：性T之設計確實具有產業上的利用性、新穎 申請進步陵，並且符合發明專利之要件，羡依法具文提出 (請先閱讀背面之注意事項再填寫本頁) 1T---------. ----- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 2^公釐）V. Description of the Invention (Exposed, because the pattern of the day element electrode has been formed, there is no need to go through the PI ^ D and T ": process, and it has a fairly flat surface, which is conducive to the production of 0LED, the development quality of" LED "is effectively improved Thin-film transistor display substrate, and only two steps are required to make the complete photovoltaic device of the present invention: the steps are obviously simpler than the conventional technology, and the process performance can be relatively reduced: the design of the sex T does have industrial use The application for progress and novelty is consistent with the requirements of the invention patent, and it is proposed in accordance with the law (please read the precautions on the back before filling this page) 1T ---------. ----- This paper Standards apply to China National Standard (CNS) A4 (210 X 2 ^ mm)