經濟部智慧財產笱員工消費合作社印製 569338 A7 . _B7 五、發明説明（i ) 本發明是關於電漿處理方法及裝置，特別是關於適合 使用電漿蝕刻處理半導體晶圓等的基板的電漿處理方法及 裝置。 【發明背景】 【習知技藝之說明】 用以維持鈾刻性能的技術已知如日本特開平9- 1 29594 號公報所記載的，藉由對第一電極施加功率使在包含反應 氣體的氣體中使電漿（Plasma)產生，電漿的發光分析、電 漿中的物質的質量分析、電漿的自偏壓（Self-bias)電壓的 計測、電漿的阻抗的計測等，利用這些的至少一種方法檢 測蝕刻中的電漿狀態，依照所檢測的電漿狀態的變化控制 偏壓電壓，以獲得鈾刻的均句性（U n i f 〇 r m i t y)高，圖案 (Pattern)尺寸以及圖案剖面形狀優良的控制性的技術。 另一方面伴隨著半導體元件的微細化，使1 // m以下 的加工尺寸的元件加工爲可能的技術習知已知例如如日本 特開平1 1 -297679號公報所記載的，在配設於真空容器內 的試樣台配置試樣，對真空容器內供給處理氣體使其電漿 化，與電漿生成獨立地對試樣台施加100kHz以上的頻率 的局頻偏壓，以100Hz〜10kHz的頻率調變（Modulate)高頻 偏壓，對同一蝕刻速度所得到的連續高頻偏壓電壓的Vpp 値，開關控制給予比該Vpp値大的値的Vpp値的高頻偏 壓電壓，以進行試樣的表面加工的方法。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公羡） 一 ---- -4 - ----------裝 II-----1T------^ (請先閲讀背面之注意事項再填寫本頁) 569338 經濟部智慧財產笱員工消費合作社印製 A7 B7__五、發明説明（2 ) 【發明槪要】 近年來伴隨著半導體元件的高速化，LSI(大型積體電 路，Large Scale Integrated Circuit)的加工尺寸現在爲 〇·1 // m水準（Level)。元件的電極或配線部分的加工精度需要 ± 0.0 1 // m 以下。 另一方面在使用電漿的蝕刻裝置有每一片晶圓加工尺 寸微小地變動的問題。例如在鈾刻裝置因真空容器的內壁 狀態等使電漿受到影響。即在鈾刻Si晶圓的情形，Si的 反應生成物逐漸附著於內壁，據此內壁表面狀態變化或發 生附著物由壁再放出等電漿組成變動。其結果若一片一片 連續處理晶圓的話，即使經常保持氣體的流量或壓力等的 晶圓的處理條件於一定，每一片晶圓的加工線寬也會發生 微小的偏移。近年來伴隨著元件的微細化，由於在0.1 // m水準的加工尺寸中於〇. 5 // m水準的加工尺寸不成爲問 題的此尺寸變動，故滿足要求加工精度困難的問題已顯在 化。 解決這種問題的方法之一有實施單一晶片淸洗（Single wafer cleaning)，在處理室內淸洗每一片晶圓的方法。但 是，本方法成爲降低產能（Throughput)的要因，並且不能 說對所有的電漿處理有效。而且，其他方法可考慮每一片 晶圓或每數片晶圓一邊修正處理條件，一邊進行電漿處理 。這種方法有如前述的習知技術所示的反饋控制 (Feedback control)的方法。 在如前述透過來自電漿的種種資訊控制偏壓電壓的習 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ' -5- (請先閲讀背面之注意事項再填寫本頁) '裝· 訂 線 經濟部智慧財產局員工消費合作社印製 569338 A7 B7 __ 五、發明説明（3 ) 知技術中，有因偏壓電壓的變更使蝕刻時的選擇性變化而 不適合罩幕（Mask)或底層膜的厚度薄的試樣的情形。 而且，在開關控制高頻偏壓電壓的習知技術中，依照 處理中的製程處理的變化控制高頻偏壓電壓的開關的點未 被考慮，與前述一樣在透過來自電漿的種種資訊控制偏壓 電壓即開關的電壓値（Vpp)的情形下，與連續偏壓比較雖 然對選擇比的影響少，但是在與微細化到0.1 // m水準以 下的元件所使用的薄的底層膜的選擇比中，可以說尙未充 分。 本發明的目的爲提供在加工尺寸爲1 // m以下的元件 加工中，不使產能降低，抑制每一片晶圓的加工尺寸的變 動，可再現性佳地加工晶圓的電漿處理方法及裝置。 上述目的可藉由在獨立控制對電漿的生成與基板的偏 壓施加，電漿處理基板的方法中，週期地時間調變施加於 試樣台的高頻電壓的輸出（振幅），且藉由處理的每一片基 板或每複數片基板變更週期的時間調變的負載比（Duty ratio)(施加有一週期所佔的大電壓的時間的比例）而達成 〇 而且，上述目的可藉由在真空容器內使電漿發生，並 且對配設於真空容器內的試樣台施加高頻電壓，處理配置 於試樣台的基板的電漿處理裝置中，具備： 連接於試樣台的高頻電源； 週期地開關調變來自高頻電源的高頻電壓的調變手段 ;以及 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ' -- ^1T^ (請先閱讀背面之注意事項再填寫本頁) -6 - 經濟部智慧財產局員工消費合作社印製 569338 A7 B7 五、發明説明（4 ) 對處理的每一片基板或每複數片基板，變更開關的負 載比的控制手段，而達成 而且，負載比的變更爲測定晶圓加工後的線寬，若由 規定値偏移的話，在修正該値的方向變更負載比。或者監 控與電漿發光等加工尺寸有相關的裝置狀態，若監控量由 正常値偏移的話，變更負載比使其進入正常範圍。 此外，爲了使鈾刻特性之一（例如加工尺寸）穩定化， 監控裝置狀態的變動而反饋於蝕刻的條件的方法需要藉由 變更某條件，防止其他蝕刻特性（例如蝕刻速度的晶圓內 面均勻性）變化。在本發明時間調變施加於試樣的高頻電 壓的輸出（振幅），藉由變更其負載比僅變更入射離子量與 原子團（Radical)附著量，不帶給電漿組成、電漿分布等其 他的蝕刻特性影響，可抑制加工尺寸的變動。 【圖式之簡單說明】 圖1是顯示本發明所適用的電漿處理裝置的一例的全 體構成圖。 圖2(a)、（b)是顯示圖1的裝置中的蝕刻裝置部的詳 細構成的縱剖面圖。 圖3是顯示施加於使用圖2所示的裝置時的試樣的高 頻電壓的開關的負載比與CD增益、選擇比以及均勻性的 鈾刻特性的關係圖。 圖4(a)、（b)是顯示被蝕刻處理的試樣的剖面形狀的 測定（監控）値的一例的圖。 本紙張尺度適用中國國家標準（ CNS ) A4規格（210X 297公釐） ----------裝 I:-----1T------^ (請先閱讀背面之注意事項再填寫本頁) -7- 569338 A7 B7 五、發明説明（5 ) 圖5是顯示使用圖2的裝置的處理的控制方法的流程 圖。 圖6是顯示電漿處理室中的CD增益的初期値與監控結 果所得到的N片處理後的CD增益特性的例子圖。 圖7是顯示顯示第二實施例的蝕刻裝置部的構成的縱 剖面圖。 圖8是顯示使用圖7的裝置的處理的控制方法的流程 圖。 圖9是顯示本發明的第三實施例的控制方法的流程圖 〇 圖1 0是顯示本發明的第四實施例的高頻電壓的施加方 法的圖。 圖11是顯示圖10的實施例的控制方法的流程圖。 圖12(a) (b) (C)是顯示圖10的高頻功率中的高 頻電壓的負載比與CD增益、高頻電壓的振幅與選擇比以及 高頻電壓的負載比與蝕刻速度的關係圖。 圖1 3是顯示第五實施例的控制方法的流程圖。 圖1 4是顯示本發明所適用的電漿處理裝置的其他例的 全體構成圖。 圖1 5是顯示本發明所適用的電漿處理裝置的其他例的 全體構成圖。 【符號說明】 1:真空處理裝置’ (請先閲讀背面之注意事項再填寫本頁) 訂 0— 經濟部智慈財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- 569338 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（β ) 6 2a〜2d:電漿處理室 3:真空傳送室 4a、4b:真空隔絕室 5:傳送裝置 6:傳送機器人 7 : 晶圓匣盒台 8 :晶圓匣盒 9 :檢查裝置 10、10a:控制裝置 11:轉平邊對準 20、20a、20b:真空處理室 21:電介質窗 22:天線 23:同軸導波管 24:整合器 25、72、81:高頻電源 2 6:磁場線圈 27、 27a、27b:下部電極 28、 28a、28b:高頻偏壓電源 29: ESC電源 3 0:排氣口 3 1:氣體供給裝置 3 2:晶圓 3 3 :高頻電壓波形 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝·Printed by the Intellectual Property of the Ministry of Economic Affairs and Employee Cooperatives 569338 A7. _B7 V. Description of the Invention (i) The present invention relates to a plasma processing method and device, particularly a plasma suitable for plasma etching of semiconductor wafers and other substrates. Processing method and device. [Background of the Invention] [Explanation of Known Techniques] A technique for maintaining uranium etching performance is known as described in Japanese Patent Application Laid-Open No. 9-1 29594. By applying power to a first electrode, a gas containing a reactive gas is introduced. Plasma generation, plasma luminescence analysis, plasma mass analysis, plasma self-bias voltage measurement, plasma impedance measurement, etc. At least one method detects the plasma state during the etching, and controls the bias voltage according to the detected change in the plasma state to obtain a high U nf ommity, pattern size, and pattern cross-sectional shape Excellent controllable technology. On the other hand, with the miniaturization of semiconductor elements, it is possible to process elements with a processing size of 1 // m or less. It is known that, for example, as described in Japanese Patent Application Laid-Open No. 1 1-297679, it is arranged in a vacuum. Samples are placed in the sample stage in the container, and the processing gas is supplied to the vacuum vessel to be plasmatized. A plasma frequency of 100 kHz or more is applied to the sample stage independently of the plasma generation, and the frequency is 100 Hz to 10 kHz. Modulate the high-frequency bias voltage. For the continuous high-frequency bias voltage Vpp 値 obtained at the same etching rate, switch control is applied to give a high-frequency bias voltage of 値 Vpp 値 greater than the Vpp 値. Methods of surface processing. This paper size is applicable to China National Standard (CNS) A4 specification (210X297). ---- -4----------- Installation II ----- 1T ------ ^ (Please read the precautions on the back before filling out this page) 569338 Printed by Intellectual Property of the Ministry of Economic Affairs / Employee Consumer Cooperative A7 B7__V. Invention Description (2) [Invention Summary] In recent years, with the rapid growth of semiconductor devices, LSI (Large Integrated Circuit, Large Scale Integrated Circuit) The processing size is now 0 · 1 // m level (Level). The processing accuracy of the electrode or wiring part of the component needs to be ± 0.0 1 // m or less. On the other hand, an etching apparatus using a plasma has a problem that the processing size of each wafer varies slightly. For example, in the uranium engraving device, the plasma is affected due to the condition of the inner wall of the vacuum container. That is, in the case of uranium-etched Si wafers, the reaction products of Si are gradually attached to the inner wall, and accordingly, the state of the surface of the inner wall is changed, or the plasma composition is changed due to changes in the adhesion of the inner wall. As a result, if wafers are continuously processed one by one, the processing line width of each wafer may be slightly shifted even if the processing conditions of the wafer, such as the gas flow rate and pressure, are constantly maintained. With the miniaturization of components in recent years, since the machining size at the level of 0.5 // m at the level of 0.1 // m has not changed as a problem, the problem of difficulty in meeting the required machining accuracy has become apparent. Into. One method to solve this problem is to perform single wafer cleaning, and to clean each wafer in a processing chamber. However, this method has been a factor in reducing throughput and cannot be said to be effective for all plasma treatments. In addition, other methods may consider performing plasma processing while modifying processing conditions for each wafer or several wafers. This method is a feedback control method as shown in the aforementioned conventional technique. As mentioned above, the paper size of the book that controls the bias voltage through various information from the plasma is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) '-5- (Please read the precautions on the back before filling this page) Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and Printing 569338 A7 B7 __ 5. Description of the Invention (3) In the known technology, the selective change in etching due to the change of the bias voltage is not suitable for the mask (Mask ) Or in the case of a thin sample of the base film. Moreover, in the conventional technique of switching and controlling the high-frequency bias voltage, the point of controlling the switch of the high-frequency bias voltage according to the change of the process in the process is not considered, and it is controlled through various information from the plasma as described above. In the case of a bias voltage, that is, the switching voltage 値 (Vpp), although it has less effect on the selection ratio compared to continuous bias, it has a thin underlayer film used for components that are miniaturized to a level below 0.1 // m The selection ratio can be said to be insufficient. An object of the present invention is to provide a plasma processing method for processing wafers with a high reproducibility without reducing production capacity, suppressing variations in the processing size of each wafer, and processing reproducible wafers in the processing of components having a processing size of 1 // m or less. Device. The above purpose can be achieved by independently controlling the generation of the plasma and the application of the bias voltage to the substrate. In the method of plasma processing the substrate, the output (amplitude) of the high-frequency voltage applied to the sample stage is periodically adjusted, and the The duty ratio (the ratio of the time for which a large voltage is applied for one cycle) is changed by changing the cycle time of each substrate or each substrate being processed. Furthermore, the above purpose can be achieved in a vacuum. A plasma processing device that generates plasma in a container and applies a high-frequency voltage to a sample stage arranged in a vacuum container to process a substrate disposed on the sample stage includes: a high-frequency power source connected to the sample stage ; Periodically switch to modulate high-frequency voltage from high-frequency power; and this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) '-^ 1T ^ (Please read the note on the back first Please fill in this page again for details) -6-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 569338 A7 B7 V. Description of the invention (4) Change the load of the switch for each substrate or multiple substrates processed Control means, and to reach, the duty ratio is changed to the measured linewidth after wafer processing, if a predetermined offset Zhi words, the duty ratio is changed in a direction of correcting the Zhi. Or monitor the device status related to the processing size such as plasma luminescence. If the monitored amount is shifted from normal to normal, change the load ratio to bring it into the normal range. In addition, in order to stabilize one of the uranium etching characteristics (for example, processing size), a method of monitoring the change in the state of the device and feeding back the conditions of the etching needs to change certain conditions to prevent other etching characteristics (such as the inner surface of the wafer at an etching rate). Uniformity). In the present invention, the output (amplitude) of the high-frequency voltage that is applied to the sample is time-modulated. By changing its load ratio, only the amount of incident ions and the amount of atomic radicals (Radical) are changed. The effect of the etching characteristics can be suppressed, and variations in processing dimensions can be suppressed. [Brief description of the drawings] Fig. 1 is a diagram showing the overall configuration of an example of a plasma processing apparatus to which the present invention is applied. 2 (a) and 2 (b) are longitudinal sectional views showing a detailed configuration of an etching device portion in the apparatus of FIG. 1. FIG. Fig. 3 is a graph showing a relationship between a load ratio of a high-frequency voltage switch applied to a sample when the apparatus shown in Fig. 2 is used, and a CD gain, a selection ratio, and a uniform uranium etch characteristic. Figures 4 (a) and 4 (b) are diagrams showing an example of measurement (monitoring) of the cross-sectional shape of a sample to be etched. This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X 297 mm) ---------- Installation I: ----- 1T ------ ^ (Please read the Please fill in this page again for precautions) -7- 569338 A7 B7 V. Description of Invention (5) FIG. 5 is a flowchart showing a control method of processing using the device of FIG. 2. Fig. 6 is a diagram showing an example of CD gain characteristics after N-chip processing obtained from the initial gain of the CD gain in the plasma processing chamber and the monitoring results. Fig. 7 is a longitudinal sectional view showing the configuration of an etching apparatus portion according to a second embodiment. Fig. 8 is a flowchart showing a control method of processing using the apparatus of Fig. 7. Fig. 9 is a flowchart showing a control method of the third embodiment of the present invention. Fig. 10 is a diagram showing a method of applying a high-frequency voltage according to the fourth embodiment of the present invention. FIG. 11 is a flowchart showing a control method of the embodiment of FIG. 10. FIG. 12 (a) (b) (C) shows the load ratio and CD gain, the amplitude and selection ratio of the high frequency voltage, and the load ratio and the etching rate of the high frequency voltage in the high frequency power of FIG. relation chart. FIG. 13 is a flowchart showing a control method of the fifth embodiment. Fig. 14 is an overall configuration diagram showing another example of a plasma processing apparatus to which the present invention is applied. Fig. 15 is an overall configuration diagram showing another example of a plasma processing apparatus to which the present invention is applied. [Symbol description] 1: Vacuum processing device '(please read the precautions on the back before filling this page) Order 0—printed on the paper standard of the China National Standards (CNS) A4 specification (printed on the paper) 210X297 mm) -8- 569338 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (β) 6 2a ~ 2d: Plasma processing chamber 3: Vacuum transfer chamber 4a, 4b: Vacuum isolation chamber 5: Conveying device 6: Conveying robot 7: Cassette box table 8: Cassette box 9: Inspection device 10, 10a: Control device 11: Turn flat edge alignment 20, 20a, 20b: Vacuum processing chamber 21: Dielectric window 22 : Antenna 23: Coaxial waveguide 24: Integrator 25, 72, 81: High-frequency power supply 2 6: Magnetic field coil 27, 27a, 27b: Lower electrodes 28, 28a, 28b: High-frequency bias power supply 29: ESC power supply 3 0: Exhaust port 3 1: Gas supply device 3 2: Wafer 3 3: High-frequency voltage waveform The paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page)
、1T 線 -9 - 經濟部智慧財產局員工消費合作社印製 569338 A7 B7__ 五、發明説明（7 ) 34:發光監視器 71:誘導線圈 82:上部電極 100:蝕刻條件調整部 【較佳實施例之詳細說明】 以下使用各圖說明適用本發明的實施例。 [實施例] 首先藉由圖1到圖6說明本發明的實施例1。在本實 施例1每一片或每複數片晶圓測定利用蝕刻處理的晶圓加 工尺寸，依照該値變更蝕刻條件。鈾刻條件在此情形下開 關調變施加於基板的晶圓之高頻電壓，且使開關的負載比 (一週期所佔的開時間的比例）變化。據此，抑制加工尺寸 的變動。 圖1是顯示用以實施實施例1中的本發明的電漿處理 方法的電漿處理裝置的全體構成圖。真空處理裝置1在此 情形下由四個電漿處理室2a〜2d與真空傳送室3與真空隔 絕室（Lock chamber)4a、4b構成。在真空傳送室3的周圍 配置有電漿處理室2a、2b以及真空隔絕室4a、4b。電漿 處理室2a〜2d例如蝕刻室，電漿處理室2c、2d例如灰化 (Ashing)室。在真空處理裝置1的真空隔絕室4a、4b側配 置有具有傳送機器人6的傳送裝置5,再者，夾著傳送裝 置5配置有可配置複數個晶圓匣盒（Cassette)8的晶圓匣盒 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) »裝· 訂 -10- 569338 A7 B7 五、發明説明（8) 台7。而且，在傳送裝置5的周圍配設有真空處理裝置1 以及對準器（Aligner)ll以及檢查裝置9。由檢查裝置9所 得到的測定結果被取入控制裝置1 0，以測定結果爲基礎 在控制裝置1 0的蝕刻條件調整部1 00中調整在電漿處理 室2a、2b的晶圓的處理條件。此外，控制裝置1 〇例如由 具備CPU或記憶體、程式、外部記憶裝置以及輸入輸出 手段等的電腦構成，以控制真空處理裝置1。其中，蝕刻 條件調整部100根據測定結果，藉由試樣或每批（Lot)單 位實行變更高頻偏壓的負載比等的兩次運轉的對比控制的 程式，或保持對此控制所需的各種資料等的記憶裝置等來 實現。 此處，晶圓匣盒8被收容於密閉的容器，藉由傳送裝 置5的傳送機器人（R〇bot)6傳送。傳送機器人6的移動空 間被保持於潔淨的氣體環境較佳，晶圓匣盒8與對準器 11之間、對準器11與真空隔絕室4a、4b之間，或者晶 圓匣盒8與真空隔絕室4a、4b之間、真空隔絕室4a、4b 與檢查裝置9之間由潔淨室（Clean room)內的環境隔離較 佳。此外，對於潔淨室內的環境的潔淨度高的情形，不進 行前述隔離也可以。 在上述電漿處理裝置中，在真空處理裝置1被蝕刻處 理的晶圓藉由傳送機器人6由真空隔絕室4a或4b傳送到 測長掃描型電子顯微鏡（以下稱爲[測長SEM])等的測定加 工線寬的檢查裝置9。在檢查裝置9利用測長SEM測定來 自加工線寬的設計値的粗量（以下稱爲[CI)增益（Gain)])。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 -線 經濟部智慧財度苟員工消費合作社印製 -11 - 經濟部智慧財產笱員工消費合作社印製 569338 A7 B7 五、發明説明（9 ) 此測定依照需要以每一片晶圓或每預定片數的晶圓來進行 ，該資料被儲存於控制裝置1 〇內的記憶裝置。而且，CD 增益具有預定的容許値，用以使初期鈾刻條件即批處理開 始時的蝕刻處理條件收斂於此容許値內而設定。此處，連 續處理幾片晶圓若CD增益超過容許値時，將此資料訊號 傳送到控制裝置1 〇內的蝕刻條件調整部100，藉由蝕刻 條件調整部1 00自動調整條件使CD增益收斂於容許値內 ，利用控制裝置10變更/調整在真空處理裝置的電漿處理 室2a或2b的蝕刻處理條件。 圖2(a)是顯示真空處理裝置1的電漿處理室2a、2b 的的縱剖面圖。此實施例中的真空處理裝置1是由天線放 射電磁波，藉由與磁場的相互作用生成電漿的ECR(電子 環繞共振式，Electron Cyclotron Resonance)方式的電漿鈾 刻裝置。在電漿處理室的真空處理室20的上部經由電介 質（Dielectric)窗21配置有A1製的天線22。在天線22經 由同軸導波管23以及整合器24連接有使UHF電磁波（例 如頻率450MHz)產生的高頻電源25。電介質窗21可透過 來自高頻電源25的電磁波。在真空處理室20的外周部捲 繞安裝有用以在真空處理室20內形成磁場的磁場線圈 26(此情形爲兩段線圏）。 在真空處理室20內面對天線22配設有用以配置試樣 的晶圓32的試樣台的下部電極27。在電介質窗2 1與下 部電極27之間形成有空間，在此空間生成有電漿。在下 部電極27連接有用以對電漿中的離子給予對晶圓32的入 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------奸衣 — J-----1T------^ (請先閱讀背面之注意事項再填寫本頁) -12- 569338 A7 B7 五、發明説明（10) 射能量的高頻偏壓電源28，與用以使晶圓32靜電吸附於 下部電極27的ESC電源29。對於高頻偏壓電源28並無 特別限制，惟通常使用200kHz到20MHz的範圍。此情形 高頻偏壓電源28的頻率使用400kHz。 而且，藉由高頻偏壓電源28施加於下部電極的高頻 電壓的電壓波形33例如如圖2(b)所示，開關控制高頻的 輸出，令開期間與閉期間爲一週期，以反覆任意的週期例 如1kHz來控制。此開關控制以每一試樣或批單位、其他 適當的單位以兩次運轉的對比控制（Run to run)來進行佳 〇 此外，取代藉由兩次運轉的對比控制開關控制高頻的 輸出，以切換控制高頻電壓的振幅大的値（蝕刻進行的範 圍的値）與小的値（蝕刻不進行的範圍的値）佳。此情形的 高頻偏壓施加方法例如以使一週期內不同的高頻偏壓電壓 分成時間11與時間t2週期地施加。 在真空處理室20的下部配設有排氣口 30，連接有省 略圖示的排氣裝置。31爲供給處理氣體到真空處理室20 內的氣體供給裝置，連接於設於電介質窗21的多數個氣 體供給孔（省略圖示）。 在如上述構成的電漿處理裝置，由高頻電源25輸出 的UHF電磁波經由整合器24以及同軸導波管23由天線 22部透過電介質窗21供給到真空處理室20內。另一方 面由磁場線圈2 6造成的磁場形成於真空處理室2 0內。藉 由電磁波的電場與磁場線圏的磁場的相互作用，可使導入 本紙張尺度適用中國國家標準（CNS ) Α4規格（21〇Χ 297公釐） :裝I r (請先閲讀背面之注意事項再填寫本頁)1T line-9-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 569338 A7 B7__ V. Description of the invention (7) 34: Light-emitting monitor 71: Induction coil 82: Upper electrode 100: Etching condition adjustment section [preferred embodiment Detailed Description] Hereinafter, embodiments to which the present invention is applied will be described using the drawings. [Embodiment] First, Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 6. In each of the first embodiment or each of the plurality of wafers, the wafer processing size was measured by etching, and the etching conditions were changed in accordance with the specifications. In this case, the uranium etching condition switches the high-frequency voltage of the wafer applied to the substrate and changes the load ratio of the switch (the ratio of the on-time occupied by one cycle). This suppresses variations in processing dimensions. Fig. 1 is a diagram showing the overall configuration of a plasma processing apparatus for implementing a plasma processing method of the present invention in a first embodiment. In this case, the vacuum processing apparatus 1 is composed of four plasma processing chambers 2a to 2d, a vacuum transfer chamber 3, and a vacuum lock chamber 4a, 4b. Plasma processing chambers 2a and 2b and vacuum isolation chambers 4a and 4b are arranged around the vacuum transfer chamber 3. The plasma processing chambers 2a to 2d are, for example, an etching chamber, and the plasma processing chambers 2c and 2d are, for example, an ashing chamber. A transfer device 5 having a transfer robot 6 is arranged on the vacuum isolation chambers 4 a and 4 b of the vacuum processing apparatus 1. Furthermore, a wafer cassette capable of arranging a plurality of cassettes 8 is placed across the transfer device 5. The paper size of the box is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) »Binding · Order -10- 569338 A7 B7 V. Description of the invention (8) Taiwan 7 . A vacuum processing device 1, an aligner 11 and an inspection device 9 are arranged around the conveying device 5. The measurement result obtained by the inspection device 9 is taken into the control device 10, and the processing conditions of the wafers in the plasma processing chambers 2a and 2b are adjusted in the etching condition adjustment section 100 of the control device 10 based on the measurement result. . The control device 10 is configured by, for example, a computer including a CPU or a memory, a program, an external memory device, and input / output means to control the vacuum processing device 1. Among them, the etching condition adjustment unit 100 executes a program of contrast control for two operations such as changing a load ratio of a high-frequency bias by a sample or a lot unit based on a measurement result, or maintains a control required for the control. It is realized by a memory device of various materials and the like. Here, the wafer cassette 8 is stored in a closed container and is transferred by a transfer robot (Robot) 6 of the transfer device 5. The moving space of the transfer robot 6 is preferably maintained in a clean gas environment, between the wafer cassette 8 and the aligner 11, between the aligner 11 and the vacuum isolation chambers 4a, 4b, or between the cassette 8 and It is preferable that the vacuum isolation chambers 4a, 4b, the vacuum isolation chambers 4a, 4b, and the inspection device 9 are isolated by the environment in a clean room. In addition, in the case where the cleanliness of the environment in the clean room is high, the aforementioned isolation may not be performed. In the above-mentioned plasma processing apparatus, the wafer subjected to the etching processing in the vacuum processing apparatus 1 is transferred by the transfer robot 6 from the vacuum isolation chamber 4a or 4b to a length-measuring scanning electron microscope (hereinafter referred to as [length-measuring SEM]) and the like. Inspection device 9 for measuring the processing line width. In the inspection device 9, the thickness (hereinafter referred to as "[CI] gain") of the design roll from the processing line width is measured by a length measurement SEM. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Order-Printed by the Ministry of Economy, Wisdom and Finance, Employee Consumption Cooperatives-11-Wisdom of Economy Printed by the property and employee consumer cooperatives 569338 A7 B7 V. Description of the invention (9) This measurement is performed on each wafer or a predetermined number of wafers as required. The data is stored in a memory device in the control device 10 . In addition, the CD gain has a predetermined allowable plutonium, and is set so that the initial uranium etching conditions, that is, the etching process conditions at the start of the batch process, are converged within the allowable plutonium. Here, when several wafers are processed continuously if the CD gain exceeds the allowable threshold, this data signal is transmitted to the etching condition adjustment section 100 in the control device 10, and the etching condition adjustment section 100 automatically adjusts the conditions to make the CD gain converge. Within the tolerance range, the control device 10 is used to change / adjust the etching processing conditions in the plasma processing chamber 2a or 2b of the vacuum processing apparatus. FIG. 2 (a) is a longitudinal sectional view showing the plasma processing chambers 2 a and 2 b of the vacuum processing apparatus 1. The vacuum processing device 1 in this embodiment is a plasma uranium engraving device of an ECR (Electron Cyclotron Resonance) method that emits electromagnetic waves from an antenna and generates plasma by interaction with a magnetic field. An antenna 22 made of A1 is arranged on the upper part of the vacuum processing chamber 20 of the plasma processing chamber via a dielectric window 21. A high-frequency power source 25 for generating UHF electromagnetic waves (e.g., a frequency of 450 MHz) is connected to the antenna 22 via the coaxial waveguide 23 and the integrator 24. The dielectric window 21 can transmit electromagnetic waves from the high-frequency power source 25. A magnetic field coil 26 for forming a magnetic field in the vacuum processing chamber 20 is wound around the outer periphery of the vacuum processing chamber 20 (in this case, a two-line coil). In the vacuum processing chamber 20, a lower electrode 27 of a sample stage on which a wafer 32 for arranging a sample is disposed is disposed facing the antenna 22. A space is formed between the dielectric window 21 and the lower electrode 27, and a plasma is generated in this space. Connected to the lower electrode 27 to give the ions in the plasma to the wafer 32. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) --------- rape. — J ----- 1T ------ ^ (Please read the precautions on the back before filling out this page) -12- 569338 A7 B7 V. Description of the invention (10) High-frequency bias power 28 with radio energy, and An ESC power source 29 for electrostatically attaching the wafer 32 to the lower electrode 27. There is no particular limitation on the high-frequency bias power supply 28, but a range of 200 kHz to 20 MHz is generally used. In this case, the frequency of the high-frequency bias power source 28 is 400 kHz. In addition, as shown in FIG. 2 (b), the voltage waveform 33 of the high-frequency voltage applied to the lower electrode by the high-frequency bias power source 28 is switched to control the high-frequency output so that the open period and the closed period become one cycle. It is controlled by repeating an arbitrary period, for example, 1 kHz. This switch control is performed with each sample or batch unit and other appropriate units with two-run contrast control (Run to run). In addition, instead of controlling the high-frequency output by the two-run contrast control switch, It is preferable to switch and control a large 値 (値 in a range in which etching is performed) and a small 値 (値 in a range in which etching is not performed) to control the amplitude of the high-frequency voltage. The high-frequency bias voltage applying method in this case is, for example, applying the high-frequency bias voltages of different periods in a cycle into time 11 and time t2. An exhaust port 30 is provided in the lower portion of the vacuum processing chamber 20, and an exhaust device (not shown) is connected. Reference numeral 31 denotes a gas supply device for supplying a processing gas into the vacuum processing chamber 20, and is connected to a plurality of gas supply holes (not shown) provided in the dielectric window 21. In the plasma processing apparatus configured as described above, the UHF electromagnetic wave output from the high-frequency power source 25 is supplied to the vacuum processing chamber 20 through the dielectric window 21 from the antenna 22 through the integrator 24 and the coaxial waveguide 23. On the other hand, a magnetic field caused by the magnetic field coil 26 is formed in the vacuum processing chamber 20. Through the interaction of the electric field of the electromagnetic wave and the magnetic field of the magnetic field line, the size of this paper can be applied to the Chinese National Standard (CNS) A4 specification (21〇 × 297mm): Ir (please read the precautions on the back first) (Fill in this page again)
、1T 經濟部智慧財產^員工消費合作社印製 -13- 經濟部智慧財產局員工消費合作社印製 569338 A7 _____B7 _______ 五、發明説明（^) 真空處理室20內的鈾刻氣體有效地被電漿化。藉由此電 漿使下部電極27上的晶圓32被實施預定的蝕刻處理。對 於蝕刻處理，藉由高頻偏壓電源28控制入射到晶圓32的 電漿中的離子的入射能量，以獲得所希望的蝕刻處理。 圖3是顯示由實驗求出使用此電漿處理裝置蝕刻處理 的多晶矽配線的CD增益、選擇比以及底層氧化膜的鈾刻 速度的晶圓面內均勻性與高頻偏壓的負載比的關係的結果 。此外，CD增益是意味者CD的增加量，選擇比是多晶 矽與底層氧化膜的鈾刻速度的比。 通常在電晶體的閘極加工需要對底層膜的數nm左右 的薄的氧化膜選擇性地鈾刻多晶矽。因此除了 CD增益外 ，與底層氧化膜的選擇比以及底層氧化膜的鈾刻速度的均 勻性很重要。此外，成爲圖3的資料的基礎之蝕刻條件， 其處理氣體使用 Cl2(18cc)、HBr(82cc)、〇2(3cc)的混合， 令處理氣體的壓力爲0.4Pa。而且，令高頻偏壓電源28的 輸出爲35W，以功率一定來控制。在開關控制高頻時，使 一週期的平均爲35W而變更功率的尖峰値。例如在負載 比爲50%藉由使功率的尖峰値爲連續輸出70W時的尖峰 値的輸出而控制，使平均値爲35W。 由圖3得知使高頻偏壓的輸出爲一定，即在使開關的 平均功率爲一定下控制負載比的情形下，CD增益依存於 負載比而變化。即得知在負載比1〇〇%(即連續偏壓）CD增 益大，而若減小負載比値的話，CD增益變小。此乃因功 率一定的情形與負載比1 〇〇%時比較若減小負載比値的話 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) -14- 569338 A7 B7 12 五、發明説明 圓存 晶依 對不 的乎 子幾 χΐ rE 離性 的勻 中均 漿與 電比 予擇 給選 對知 故得 大且 變而 幅 。 振大 的變 壓量 電能 頻射 高入 ， 的 經濟部智慧財產笱員工消費合作社印製 於負載比。即若使高頻偏壓的輸出（功率）爲一定開關調變 施加於試樣的高頻變更其負載比的話，可不變更對配線的 加工造成大影響的選擇比以及底層氧化膜的蝕刻速度的均 勻性，換言之可不降低選擇比以及均勻性的性能而僅變更 CD增益。 如果依照本發明，藉由利用如圖3所示的負載比的特 性，進行兩次運轉的對比控制，可抑制試樣的加工尺寸的 變動。 關於此點以下具體地說明。圖4是顯示在閘極材料的 Poly-Si膜3 12上蝕刻處理具有罩幕311的試樣的情形的 剖面形狀。圖4(a)爲目標形狀（CD値爲LI)，（b)爲因蝕刻 特性的變化等使處理形狀變粗的情形（CD値爲L2)的例子 。試樣的加工尺寸的變動量（L2-L1)是藉由負載比反饋控 制維持於預定値以下。 圖5是以檢查裝置9測定由被處理的晶圓之中第N 片的晶圓，根據被測定的加工線寬的CD增益，利用控制 裝置1 0的蝕刻條件調整部1 00控制比第N片晶圓還後處 理的第N-m(m=l、2.·.)片的晶圓的負載比的兩次運轉的對 比控制，此情形負載比反饋控制的流程圖。利用檢查裝置 9的測長SEM進行以蝕刻處理裝置蝕刻處理的第N片晶 圓的CD的計測（502)。求出此CD値與目標値的差（圖4的 變動量L2-L 1)(504)，判定變動量是否在規格値以內（506) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------^衣 — :-----1T------^ (請先閱讀背面之注意事項再填寫本頁) -15- 經濟部智慧財產局員工消費合作社印製 569338 A7 B7 五、發明説明（13) ，若在規格値以內的話以該負載（Duty)控制的設定値處理 下一個新的第N + m片的晶圓（508)。若變動量偏移規格値 的話，變更負載比（510)，處理下一個新的第N + m片的晶 圓（508)。第N + m片的蝕刻處理的終了使用鈾刻終點判定 裝置來進行（512)。 圖6是顯示電漿處理中的CD增益的初期値與監控結 果所得到的N片處理後的CD增益特性的例子。如圖6所 示CD增益具有預定的容許値（規格値），初期蝕刻條件即 批處理開始時的蝕刻處理條件是使CD增益收斂於此容許 値內而設定。另一方面連續處理幾片晶圓例如Si晶圓後 ，Si的反應生成物逐漸地附著於電漿處理室的內壁，據 此，內壁表面狀態變化。其結果電漿受到影響，即使蝕刻 條件相同CD增益也變化。因此，CD增益超過容許値的 情形將此資料訊號傳送到控制裝置1 〇內的蝕刻條件調整 部1 00，藉由鈾刻條件調整部1 00自動設定條件使CD增 益收斂於容許値內，利用控制裝置1 〇變更/調整在真空處 理裝置的電漿處理室2a或2b的蝕刻處理條件。 此變更/調整量如圖6而求出。例如在初期値CD目標 値爲0.23// m，那時的負載比被設定爲50%。得知當CD 變動量的規格爲± 5nm時，在蝕刻後的CD變動量變粗到 7nm的情形下，由預先資料化的圖6的特性若負載比約減 小10%的話，CD增益減小7nm。因此，藉由負載比反饋 控制設定負載比爲40%，處理下一片晶圓。藉由此負載比 的反饋控制，可使下一片晶圓的CD値返回到目標値的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） --------------II------^ (請先閲讀背面之注意事項再填寫本頁) -16- 經濟部智慧財產局員工消費合作社印製 569338 A7 ______ B7_ 五、發明説明（14) 〇· 23 // m 〇 如圖6所示的CD增益與負載比的關係若處理的晶圓 的構造或蝕刻條件變更的話變化。因此，實際上需要預先 製作儲存對應各處理的資料的資料庫，或者每一晶圓的處 理儲存資料構築資料庫，可藉由控制裝置10而利用。 此外，即使是連續地施加高頻加大其功率的方法，因 離子能量變大故可減小形狀的粗度即CD增益。但是，在 此情形因僅離子能量變大無加速離子的偏壓的斷開（Off) 期間，故氧化膜的蝕刻速度也同時增加，選擇比變小，產 生底層氧化膜削去的問題。 以上如果依照本一實施例的話，對因藉由晶圓處理的 反覆所產生的真空處理室內的電漿組成變化或變動造成的 每一晶圓的加工線寬的微小的偏移，藉由依照CD增益値 反饋控制高頻偏壓電源的負載比，可使晶圓的加工線寬爲 最佳値，可滿足所要求的加工精度。據此，具有可抑制每 一晶圓的加工尺寸的變動，可再現性佳地加工。 而且，負載比的變更因可使數nm單位的CD增益的 調整容易，故適合於每一片晶圓的加工尺寸的變動成爲問 題的0.1 // m〜0.05 // m水準的微細的半導體元件的加工。 而且，兩次運轉的對比控制在晶圓加工後的CD增益 値超過容許範圍前，若CD增益値開始出現變化的話，根 據儲存於前述的蝕刻條件調整部1 〇〇的資料，經常維持高 頻偏壓的負載比而進行前饋控制（Feed forward control)也 可以。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） t-IT^ (請先閱讀背面之注意事項再填寫本頁) -17- 經濟部智慧財產局員工消費合作社印製 569338 A7 _____B7_ 五、發明説明（15) 而且，測定加工尺寸的裝置以測長SEM爲一般，但 是測長SEM因由上觀察形狀，其形狀細即多晶矽的寬比 光阻（Resist)的尺寸還小的情形，有無法測定多晶矽的寬 的問題。取代測長SEM求出加工線寬的偏移或變化的方 法有測定配線的電阻求出來自加工尺寸的設計値的偏移的 方法，或由光的反射或繞射推定配線的形狀的方法等。檢 查裝置9使用這些方法，對蝕刻條件施加反饋控制或前饋 控制以調整負載比的話，使加工形狀變細的情形的修正爲 可能。 而且，兩次運轉的對比控制即測定加工尺寸調整蝕刻 條件的製程即使每一片晶圓或每複數片一次其製程的設定 爲可能，但是若此爲依照晶圓的處理狀態而設定的話佳。 而且，蝕刻條件調整部100伴隨著CD增益的變動而 調整的蝕刻條件至少爲負載比，除了負載比外，微調整氣 體壓力或氣體組成等的其他條件也可以。 [實施例2] 其次，藉由圖7以及圖8說明本發明的第二實施例。 在圖7中與圖2同符號顯示同一構件省略說明。本實施例 與圖2的實施例不同的點爲取代檢查裝置9配設監控電漿 光的手段，依照電漿生成狀態的變化以控制負載比等。即 對應成爲真空處理室20的處理空間的電漿生成部，配設 採電漿光的採光窗，配設測定經由光纖連接於採光窗而採 光的電漿光的發光光譜的發光監視器34，使藉由發光監 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----------一裝 I"-----、玎------0 (請先閲讀背面之注意事項再填寫本頁) -18- 經濟部智慧財產局員工消費合作社印製 569338 A7 B7 五、發明説明（16) 視器34測定的發光光譜電氣訊號化而輸入到控制裝置 1 Oa ° 蝕刻的形狀每一片晶圓變化的原因有氯化Si等的反 應生成物附著於真空處理室20內壁，使電漿的狀態改變 。例如附著於內壁的反應生成物被再放出而附著於晶圓 32的話，CD增益變大。同時對光的波長測定電漿發光強 度。即若測定發光光譜的話，對應於反應生成物的增加的 變化被測定。變化的樣相因氣體組成或被蝕刻的物質而不 同，惟預先測定CD增益與電漿的發光光譜的關係，將此 資料輸入蝕刻條件調整部1 00。在蝕刻條件調整部1 00將 發光監視器34的輸出變化變換成負載比的調整量，藉由 控制裝置10a變更高頻偏壓電源28的負載比。 如此在控制裝置1 0a的鈾刻條件調整部1 〇〇，預先輸 入發光光譜與CD增益的關係的資料而記憶，或者每一晶 圓的處理儲存資料。 在如上述構成的裝置，每一晶圓處理藉由發光監視器 34測定電漿的發光光譜，藉由蝕刻條件調整部丨〇〇使CD 增益收斂於容許範圍以選定或算出小的負載比或大的負載 比，由控制裝置1 0a將調整高頻偏壓電源28的負載比與 功率的輸出尖峰値（振幅）的訊號傳送到高頻偏壓電源28， 以調整高頻偏壓電源28的負載比以及尖峰電壓。據此， 藉由控制裝置10a配合每一*晶圓處理的發光光譜變動，可 即時（Real-time)地調整來自高頻偏壓電源的高頻偏壓的負 載比。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----------11"^-----1T------^ (請先閱讀背面之注意事項再填寫本頁) -19- 569338 A7 B7 經濟部智慧財產局員工消費合作杜印製 五、發明説明（17) 以上的處理流程顯示於圖8。若蝕刻開始的話（802)， 計測來自發光監視器34的値（804)，求出該計測値對前次 的監控値變化多少（806)。判定求出的變化量對前次監控 値是否在容許範圍內（808)，若在範圍內的話可原封不動 地不變更條件進行處理。在808的步驟當判定爲範圍外時 ，進行高頻偏壓的開關的反覆的負載控制即變更負載比的 控制（810)。這些控制後，對於晶圓的蝕刻處理尙未終了 的情形（812)，繼續監控値的計測（804)，反覆上述流程。 然後在步驟8 1 2中若判定蝕刻的終了的話，傳出/回收晶 圓，再者若預定片數的晶圓處理終了的話，完成處理 (814” 以上，如果依照本第2實施例，因可依照發光光譜換 言之依照CD增益値調整高頻偏壓電源的負載比，故與前 述的實施例一樣可使晶圓的加工線寬爲最佳値，可滿足要 求的加工精度。據此，與前述第一實施例一樣具有可抑制 每一片晶圓的加工尺寸的變動，可再現性佳地加工的功效 。而且，適合於每一片晶圓的加工尺寸的變動成爲問題的 0.05 // m〜0.1 // m水準的微細的半導體元件的加工。 此外，電漿的發光光譜的訊號當作某特定波長的訊號 強度而處理也可以，且作爲多變數解析手法使用一般已知 的主値解析法，變換成以與CD增益具有最相關的主成分 或幾個主成分的合成求出的參數而處理也可以。 而且，在此實施例雖然使用電漿的發光光譜，但是表 示電漿蝕刻裝置的狀態的監控量，除了電漿的發光光譜外 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 569338 A7 B7 五、發明説明（18) ，也可考慮使用電漿以及電源電路的阻抗或高頻偏壓電源 28的電壓波形高度等。 [實施例3] 其次說明本發明的第三實施例。對於像電漿的發光光 譜或上述的其他監控値在可電漿處理的範圍急遽變化的情 形，裝置的硬體的變化例如因藉由電漿的電路上的零件的 磨耗或劣化等造成的異常被認定，故此情形首先不使處理 中的晶圓不良而謀求偏壓電壓的適當化，因此，用以使開 關控制時的定功率控制的功率値變化使其最佳化而控制的 話佳。此外，此實施例的裝置構成除了蝕刻條件調整部 1 〇〇外，其餘與第二實施例相同。 此實施例3中的蝕刻條件調整部1 〇〇的控制流程如圖 9所示。若蝕刻開始的話（902)，計測來自發光監視器34 的値（904)，求出該計測値對前次的監控値變化多少（906) 。判定求出的變化量是否爲對前次監控値的設定値（容許 値）的範圍內（908)，若在範圍內的話進行通常的高頻偏壓 的開關的反覆的負載（Duty)控制（910)。這些控制後，對於 蝕刻尙未終了的情形（912)，繼續監控値的計測（904)，反 覆上述流程。然後若判定蝕刻終了的話，完成蝕刻傳出/ 回收晶圓（914)。另一方面在步驟908判定爲範圍外的情 形，即求出的變化量超過對前次監控値的設定値（容許値） 的範圍的話，裝置的硬體的變化例如因藉由電漿的電路上 的零件的磨耗或劣化等造成的異常可被考慮。此情形在可 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） ---------^ — r (請先閲讀背面之注意事項再填寫本頁)1T Printed by the Intellectual Property of the Ministry of Economic Affairs ^ Printed by the Employee Consumption Cooperative -13- Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 569338 A7 _____B7 _______ V. Description of the Invention (^) The uranium-etched gas in the vacuum processing chamber 20 is effectively plasma Into. The wafer 32 on the lower electrode 27 is subjected to a predetermined etching process by the plasma. For the etching process, a high-frequency bias power source 28 is used to control the incident energy of ions incident on the plasma of the wafer 32 to obtain a desired etching process. FIG. 3 shows the relationship between the in-plane uniformity of the wafer and the load ratio of the high-frequency bias, showing the CD gain, selection ratio, and uranium etch rate of the underlying oxide film of the polycrystalline silicon wiring etched by the plasma processing apparatus. the result of. In addition, the CD gain is the increase in CD, and the selection ratio is the ratio of polycrystalline silicon to the uranium etch rate of the underlying oxide film. Generally, the gate processing of a transistor requires selective uranium etching of polycrystalline silicon for a thin oxide film of a few nm in thickness of the underlying film. Therefore, in addition to the CD gain, the selection ratio to the underlying oxide film and the uniformity of the uranium etch rate of the underlying oxide film are important. In addition, as the etching conditions on which the data of FIG. 3 are based, a mixture of Cl2 (18cc), HBr (82cc), and 02 (3cc) was used as the processing gas, and the pressure of the processing gas was set to 0.4 Pa. In addition, the output of the high-frequency bias power supply 28 was set to 35 W, and the power was controlled with a constant power. When the switch controls high frequency, the average peak value of one cycle is 35 W, and the peak value of the power is changed. For example, when the duty ratio is 50%, the peak value 功率 of the power when the continuous output is 70W is controlled to make the average value 35 35W. From Fig. 3, it is known that when the output of the high-frequency bias is constant, that is, when the load ratio is controlled with the average power of the switch being constant, the CD gain varies depending on the load ratio. That is to say, the CD gain is larger at a load ratio of 100% (that is, continuous bias), and if the load ratio 减小 is decreased, the CD gain becomes smaller. This is due to the situation of a certain power compared with the load ratio of 100%. If the load ratio is reduced, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) gutter (please read the precautions on the back first) (Fill in this page again.) -14- 569338 A7 B7 12 V. Description of the invention The existence of the circular crystal depends on the number of children. Χΐ rE Frame. Zhenda ’s variable-voltage electrical energy is frequently emitted, and the intellectual property of the Ministry of Economic Affairs / Employee Consumer Cooperatives is printed on the load ratio. That is, if the output (power) of the high-frequency bias is adjusted by a certain switch to adjust the high-frequency applied to the sample and the load ratio is changed, the selection ratio that has a great influence on the processing of the wiring and the etching rate of the underlying oxide film can be changed. Uniformity, in other words, it is possible to change only the CD gain without lowering the performance of the selection ratio and uniformity. According to the present invention, by using the characteristics of the load ratio as shown in Fig. 3 to perform a contrast control of two runs, it is possible to suppress variations in the processing size of the sample. This point will be specifically described below. Fig. 4 is a cross-sectional view showing a state in which a sample having a mask 311 is etched on the Poly-Si film 31 of the gate material. Figure 4 (a) shows the target shape (CD 値 is LI), and (b) shows an example of a case where the processed shape becomes thicker due to changes in etching characteristics (CD 値 is L2). The variation (L2-L1) of the processing size of the sample is maintained below a predetermined value by feedback control of the load ratio. FIG. 5 uses the inspection device 9 to measure the Nth wafer among the processed wafers, and uses the etching condition adjustment unit 100 of the control device 10 to control the Nth wafer based on the CD gain of the measured processing line width. Contrast control of two runs of the Nm (m = 1, 2 ...) wafer load ratio after post-processing of the wafer. This is a flowchart of load ratio feedback control in this case. The length measurement SEM of the inspection device 9 is used to measure the CD of the N-th wafer circle etched by the etching processing device (502). Calculate the difference between the CD 値 and the target 图 (fluctuation amount L2-L1 in Figure 4) (504), and determine whether the variation amount is within the specification 値 (506) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 Mm) --------- ^ 衣 —: ----- 1T ------ ^ (Please read the notes on the back before filling out this page) -15- Intellectual Property Bureau, Ministry of Economic Affairs Printed by the Employee Consumption Cooperative 569338 A7 B7 V. Description of the invention (13), if it is within the specification 値, the next new N + mth wafer (508) will be processed with the setting controlled by the duty (Duty). If the amount of variation deviates from the specification 値, the load ratio is changed (510), and the next new N + mth wafer is processed (508). The end of the etching process of the N + m-th wafer is performed using a uranium etching end point determination device (512). Fig. 6 shows an example of CD gain characteristics after N-chip processing obtained by initial stage gain of CD gain in plasma processing and monitoring results. As shown in Fig. 6, the CD gain has a predetermined allowance (specification), and the initial etching conditions, that is, the etching conditions at the start of the batch process, are set so that the CD gain converges within the allowable range. On the other hand, after several wafers such as Si wafers are processed continuously, the reaction products of Si gradually adhere to the inner wall of the plasma processing chamber, and accordingly, the state of the inner wall surface changes. As a result, the plasma is affected, and the CD gain changes even under the same etching conditions. Therefore, if the CD gain exceeds the allowable radon, this data signal is transmitted to the etching condition adjustment unit 100 in the control device 10, and the uranium etching condition adjustment unit 100 automatically sets the conditions to make the CD gain converge within the allowable radon. The control device 10 changes / adjusts the etching processing conditions in the plasma processing chamber 2a or 2b of the vacuum processing apparatus. This change / adjustment amount is obtained as shown in FIG. 6. For example, in the initial stage, the 目标 CD target 値 is 0.23 // m, and the load ratio at that time is set to 50%. It is known that when the specification of the CD variation amount is ± 5 nm, and when the CD variation amount after etching becomes coarse to 7 nm, if the characteristic of FIG. 6 that is documented in advance is reduced by about 10%, the CD gain decreases. 7nm. Therefore, the load ratio feedback control is used to set the load ratio to 40% to process the next wafer. Through the feedback control of this load ratio, the CD 値 of the next wafer can be returned to the target 値. The paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ---------- ---- II ------ ^ (Please read the notes on the back before filling out this page) -16- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 569338 A7 ______ B7_ V. Description of Invention (14) 〇 · 23 // m 〇 The relationship between the CD gain and the load ratio shown in FIG. 6 changes if the structure of the processed wafer or the etching conditions change. Therefore, in practice, it is necessary to make a database storing data corresponding to each process in advance, or to construct a database of process storage data for each wafer, which can be used by the control device 10. In addition, even if a method of continuously applying a high frequency to increase its power, the ion gain becomes large, so that the thickness of the shape, that is, the CD gain can be reduced. However, in this case, since only the ion energy becomes larger and the off-bias (Off) period does not accelerate the bias of the ions, the etching rate of the oxide film also increases at the same time, the selection ratio becomes smaller, and the problem that the underlying oxide film is peeled off occurs. If the above is in accordance with this embodiment, a slight shift in the processing line width of each wafer caused by changes or changes in the plasma composition in the vacuum processing chamber caused by repeated wafer processing can be achieved by following The CD gain / feedback control the load ratio of the high-frequency bias power supply, which can optimize the processing line width of the wafer, and can meet the required processing accuracy. This makes it possible to suppress variations in the processing size of each wafer and to process with high reproducibility. In addition, the change of the load ratio makes it easy to adjust the CD gain in units of a few nanometers, so it is suitable for fine semiconductor devices of the level of 0.1 // m to 0.05 // m that are suitable for variations in the processing size of each wafer. machining. In addition, the contrast control of the two runs before the CD gain 晶圆 after wafer processing exceeds the allowable range, if the CD gain 値 starts to change, the high frequency is always maintained according to the data stored in the etching condition adjustment section 100 described above. It is also possible to perform feed forward control with a biased load ratio. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) t-IT ^ (Please read the precautions on the back before filling this page) -17- Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 569338 A7 _____B7_ V. Description of the invention (15) Moreover, the length measurement SEM is generally used as the device for measuring the processing size, but the length measurement SEM observes the shape from above, and the shape is thin, that is, the width of the polycrystalline silicon photoresist is small. There is a problem that the width of polycrystalline silicon cannot be measured. Instead of measuring the length or width of the processing line, the method of calculating the shift or change in the line width includes a method of measuring the resistance of the wiring to obtain a shift from the design dimension of the processing size, or a method of estimating the shape of the wiring by reflection or diffraction of light, etc. . The inspection device 9 uses these methods to adjust the load ratio by applying feedback control or feedforward control to the etching conditions, thereby making it possible to correct the situation where the processed shape becomes thinner. In addition, the comparison control of two runs, that is, the process of measuring the size of the process and adjusting the etching conditions, is possible even if the setting of the process is possible for each wafer or multiple wafers, but it is better to set it according to the processing state of the wafer. In addition, the etching conditions adjusted by the etching condition adjusting section 100 as the CD gain fluctuates are at least a load ratio. In addition to the load ratio, other conditions such as gas pressure and gas composition may be finely adjusted. [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Figs. 7 and 8. In FIG. 7, the same components as those in FIG. 2 are shown with the same reference numerals, and description thereof is omitted. This embodiment is different from the embodiment of FIG. 2 in that instead of the inspection device 9 being provided with a means for monitoring the plasma light, the load ratio is controlled according to the change in the plasma generation state. That is, a plasma generation unit corresponding to a processing space of the vacuum processing chamber 20 is provided with a lighting window for collecting plasma light, and a light emitting monitor 34 for measuring a light emission spectrum of the plasma light which is connected to the lighting window through an optical fiber. The paper size of the monitor is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ---------- one-pack I " -----, 玎 ------ 0 (Please read the notes on the back before filling this page) -18- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 569338 A7 B7 V. Description of the invention (16) The luminescence spectrum measured by the sight 34 is electrically signaled and input to the control Device 1 Oa ° The shape of each wafer changes due to reaction products such as Si chloride attached to the inner wall of the vacuum processing chamber 20, which changes the state of the plasma. For example, if the reaction product attached to the inner wall is re-emitted and attached to the wafer 32, the CD gain is increased. At the same time, the light emission intensity of the plasma was measured for the wavelength of light. That is, when the emission spectrum is measured, a change corresponding to an increase in the reaction product is measured. The changed sample phase differs depending on the gas composition or the material being etched, but the relationship between the CD gain and the plasma emission spectrum is measured in advance, and this data is input to the etching condition adjustment section 100. In the etching condition adjustment unit 100, the output change of the light-emitting monitor 34 is converted into an adjustment amount of the load ratio, and the load ratio of the high-frequency bias power supply 28 is changed by the control device 10a. In this way, in the uranium-etching condition adjustment unit 100 of the control device 10a, data on the relationship between the emission spectrum and the CD gain is input and stored in advance, or the data is stored and processed for each crystal circle. In the device configured as described above, the luminescence spectrum of the plasma is measured by the light emission monitor 34 for each wafer process, and the CD gain is converged to an allowable range by the etching condition adjustment section. The small load ratio or With a large load ratio, the control device 10a transmits a signal for adjusting the load ratio of the high-frequency bias power source 28 and the power output spike (amplitude) to the high-frequency bias power source 28 to adjust the frequency of the high-frequency bias power source 28. Load ratio and spike voltage. Accordingly, the control device 10a can adjust the load ratio of the high-frequency bias from the high-frequency bias power supply in real-time by coordinating the fluctuation of the emission spectrum processed by each wafer. This paper size is applicable to China National Standard (CNS) A4 (210X297mm) ---------- 11 " ^ ----- 1T ------ ^ (Please read the note on the back first Please fill in this page for more information) -19- 569338 A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumption Cooperation by Employees. V. Description of Invention (17) The above processing flow is shown in Figure 8. If the etching is started (802), 値 from the light emitting monitor 34 is measured (804), and how much the measurement 値 changes from the previous monitoring 値 is determined (806). It is determined whether the obtained change amount is within the allowable range (808) of the previous monitoring. If it is within the range, it can be processed without changing the conditions. When it is determined in step 808 that it is out of range, repeated load control of the high-frequency bias switch, that is, control of changing the load ratio is performed (810). After these controls, for the case where the etching process of the wafer is not finished (812), the measurement of 値 is continued to be monitored (804), and the above process is repeated. Then, if it is judged that the etching is finished in step 8 1 2, the wafer is transferred out / recovered, and if the wafer processing of a predetermined number of wafers is finished, the process is completed (814 ”or more. If according to the second embodiment, because The load ratio of the high-frequency bias power supply can be adjusted according to the emission spectrum, in other words, according to the CD gain, so the processing line width of the wafer can be optimized as in the previous embodiment, and the required processing accuracy can be satisfied. The aforementioned first embodiment also has the effect of suppressing the variation of the processing size of each wafer and processing with good reproducibility. In addition, the variation of the processing size suitable for each wafer is a problem of 0.05 // m ~ 0.1 // m-level processing of fine semiconductor elements. In addition, the signal of the plasma's emission spectrum can be treated as the signal intensity of a specific wavelength, and the commonly-known principal chirp analysis method is used as a multivariate analysis method. It may be processed by converting into a parameter obtained by a principal component or a combination of several principal components that have the most correlation with the CD gain. In this embodiment, a plasma emission spectrum is used. , But the monitoring quantity indicating the state of the plasma etching device, in addition to the plasma emission spectrum outside the binding line (please read the precautions on the back before filling this page) This paper size applies Chinese National Standard (CNS) A4 specifications (210X297) (Centi) -20- 569338 A7 B7 5. Description of the invention (18), it is also possible to consider the use of plasma and impedance of the power supply circuit or the voltage waveform height of the high-frequency bias power supply 28. [Embodiment 3] Next, the invention will be described. The third embodiment: For the situation that the plasma emission spectrum or other monitoring mentioned above changes rapidly in the plasma-processable range, the hardware of the device changes, for example, due to the wear of the parts on the circuit of the plasma or The abnormality caused by deterioration is recognized. Therefore, in this case, the bias voltage should be appropriately optimized without making the wafer under processing defective. Therefore, the power of constant power control during switch control is changed to optimize it. It is good to control. In addition, the device configuration of this embodiment is the same as that of the second embodiment, except for the etching condition adjustment section 100. The adjustment of the etching conditions in this embodiment 3 The control flow of 100 is shown in Fig. 9. If etching is started (902), 値 from the light-emitting monitor 34 is measured (904), and how much the measurement 値 changes from the previous monitoring 値 is determined (906). Is the calculated amount of change in the range (908) of the setting 値 (allowable) of the previous monitor (if it is within the range), and if it is within the range, the normal high-frequency bias switch is repeatedly loaded (Duty) controlled (910) After these controls, for the case where etching is not finished (912), continue to monitor the measurement of radon (904) and repeat the above process. Then, if it is judged that the etching is finished, complete the etching transfer / recover wafer (914). On the other hand, if it is determined to be out of range in step 908, that is, if the calculated change amount exceeds the range of the setting 値 (allowable 对) for the previous monitoring, the change in the hardware of the device is caused by, for example, the circuit of the plasma. Abnormalities caused by wear or deterioration of the parts can be considered. In this case, the Chinese paper standard (CNS) Α4 specification (210 × 297 mm) is applicable to this paper size. --------- ^ — r (Please read the precautions on the back before filling this page)
、1T 線 經濟部智慧財產笱員工消費合作社印製 -21 - 569338 經濟部智慧財產局員工消費合作社印製 A7 _B7_五、發明説明（19) 電漿處理的範圍，首先不使處理中的晶圓不良而使應謀求 偏壓電壓的適當化的開關控制時的輸出値即功率値變化， 使其最佳化而控制（9 1 6)。若即使進行這種控制也連續地 超過對監控値的設定値（容許値）的範圍的話（918)，因可考 慮裝置或處理條件有某些異常，故輸出警報（Ala:rm)(920) ，使其等待線上操作者所發的具體的處置。 此情形令監控値的變化量與高頻偏壓的輸出値的關係 以及用以輸出警報的條件爲資料預先輸入，或藉由儲存每 一處理的資料使其資料化而進行。 [實施例4] 其次說明本發明的第四實施例。在實施例1雖然如圖 2(b)所示開關控制高頻電壓，但是在本實施例將一週期內 分割成三個以上的區域如時間Tl、T2...Tm而設定，並且 將各個高頻的施加功率（或振幅）設定成PI、P2... Pm而控 制。 使用圖1 0〜圖1 2說明此實施例。圖1 〇是顯示此情形 將一週期內分割成三個次區域的情形。圖11是顯示使用 圖10所示的高頻功率處理的情形的流程。首先，決定令 每一週期的分割數（m)爲m = 3，Tl、T2、T3以及對應T1、 T2、T3的PI、P2、P3(1102)，開始蝕刻處理。例如設定 P1爲100W、P2爲10W、P3爲30W。對於CD値、選擇比 、蝕刻速度，藉由前述測定檢查裝置等測定完成餓刻處理 的晶圓（1104、1106、1108)，根據測定的結果若在規格値 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公羡) '' •22- (請先閱讀背面之注意事項再填寫本頁) •裝· 、11 線 經濟部智慧財產局員工消費合作社印製 569338 A7 B7_ 五、發明説明（2〇) 以內的話（111 2)不變更任何條件，完成控制値的設定 (1114)，處理下一片晶圓，惟若變動量偏移規格値的話， 設定變更次區域的T1、T2、T3以及P1、P2、P3的任一 個（1116)，處理下一片晶圓。 例如如圖1 0將一週期分割成三個區間的話，可得到 如圖1 2的特性。振幅最大的區間T 1爲控制最大離子能量 的區間，此區間的比例成爲CD的支配因子。因此，如圖 12(a)控制區間T1的比例以調整CD。而且’藉由小小地 變更振幅最小的區間T2的振幅’換言之變更施加功率， 如圖12(b)使選擇比的微調整爲可能。當然變更其他區間 的振幅選擇比也改變，惟此情形選擇比的變動大很難控制 ，且CD等也同時改變。因此，對於CD等極力抑制對其 他的要因的影響，以進行選擇比的微調整’稍微改變區間 T2的振幅較適合。而且，具有中間振幅的區間T3可利用 於Poly-Si的蝕刻速度的調整。因此，區間T3的振幅設 定爲比晶圓的沉積所產生的臨界値稍微高’雖然影響 Poly-Si的蝕刻速度，惟需要對氧化膜速率極力不給予影 響而調整振幅。以此調整的基礎如圖12(c)藉由變更區間 T3的比例，可控制P〇iy-Si的蝕刻速度。1. Printed by the Intellectual Property of the Ministry of Economics and the Consumer Consumption Cooperative of the 1T Line -21-569338 Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of the invention (19) The scope of plasma processing is not to make the crystal The roundness is poor, and the output (ie, power) at the time of switching control that requires an appropriate bias voltage is changed to optimize and control it (9 1 6). If the range of the setting 値 (allowable 値) of the monitoring 进行 is continuously exceeded even if such control is performed (918), an alarm may be output (Ala: rm) because some abnormalities in the device or processing conditions may be considered (920) To make it wait for the specific treatment issued by the online operator. In this case, the relationship between the amount of change of the monitor 与 and the output 高频 of the high-frequency bias and the conditions for outputting the alarm are inputted in advance, or by storing each processed data to make it data. [Embodiment 4] Next, a fourth embodiment of the present invention will be described. Although the high-frequency voltage is controlled by the switch as shown in FIG. 2 (b) in the first embodiment, in this embodiment, one or more periods are divided into three or more regions such as time T1, T2 ... Tm, and each The high frequency applied power (or amplitude) is controlled by setting PI, P2 ... Pm. This embodiment will be described using FIGS. 10 to 12. Fig. 10 shows the situation where the period is divided into three sub-regions. FIG. 11 is a flowchart showing a case where the high-frequency power processing shown in FIG. 10 is used. First, it is determined that the number of divisions (m) per cycle is m = 3, T1, T2, T3 and PI, P2, and P3 (1102) corresponding to T1, T2, and T3, and the etching process is started. For example, set P1 to 100W, P2 to 10W, and P3 to 30W. For the CD 値, selection ratio, and etching speed, the wafers (1104, 1106, 1108) that have been processed by the above-mentioned measurement and inspection device are measured. If the results of the measurement are in accordance with the specifications, the Chinese paper standard (CNS) ) A4 specifications (210X297 public envy) '' • 22- (Please read the precautions on the back before filling out this page) • Installation · Printed by the 11th line of the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperatives 569338 A7 B7_ V. Description of the invention ( 2〇) If it is less than (111 2), complete the setting of control 完成 (1114) without changing any conditions, and process the next wafer. However, if the amount of variation deviates from the specification 设定, set T1, T2, T3, and Any of P1, P2, and P3 (1116) processes the next wafer. For example, if a period is divided into three intervals as shown in Fig. 10, the characteristics shown in Fig. 12 can be obtained. The interval T 1 with the largest amplitude is the interval for controlling the maximum ion energy, and the ratio of this interval becomes the dominant factor of CD. Therefore, as shown in Fig. 12 (a), the proportion of the interval T1 is controlled to adjust the CD. Furthermore, "by changing the amplitude of the interval T2 with the smallest amplitude" in other words, changing the applied power, as shown in Fig. 12 (b), makes it possible to finely adjust the selection ratio. Of course, changing the amplitude selection ratio in other sections also changes, but in this case, the change in the selection ratio is difficult to control, and CD and so on also change at the same time. For this reason, it is suitable to change the amplitude of the interval T2 slightly by suppressing the influence of other factors such as CD and fine-adjusting the selection ratio '. The interval T3 having an intermediate amplitude can be used to adjust the etching speed of Poly-Si. Therefore, the amplitude of the interval T3 is set to be slightly higher than the critical threshold value generated by wafer deposition. Although the etching speed of Poly-Si is affected, it is necessary to adjust the amplitude without affecting the oxide film rate as much as possible. The basis of this adjustment is shown in Fig. 12 (c). By changing the ratio of the interval T3, the etching speed of Poi-Si can be controlled.
具體上在第N片處理後CD如圖12U)若僅△ CD變動 的話，使CD返回到目標値僅變更T1的比例△ T1，處理 下一片晶圓。選擇比如圖12(b)若僅偏移△ S的話’僅變 更期間T 2的振幅△ P 2而處理下一片晶圓的話’可保持選 擇比於目標値。同樣地若P〇iy-Si的蝕刻速度僅偏移△ R 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------^ — u-----IT------^ (請先閱讀背面之注意事項再填寫本頁) -23- 經濟部智慧財產局員工消費合作社印製 569338 A7 ___B7_ 五、發明説明（21 ) 的話，如圖12(c)僅變更區間T3的比例△ T3，以保持 Poly-Si的鈾刻速度於目標値。 即使是本實施例，在大致保持其他因子於一定下，可 變更僅希望控制的因子的控制的寬也並未那麼大。但是， 在以相同條件大量地處理相同製品的情形下，本來形狀等 不變化。此處，因以發生極小的經時變化調整爲目的，故 本發明發揮功效。 [實施例5] 其次，說明本發明的第五實施例。本實施例是在處理 中變更次區域的數（m)，獨立地控制一週期內的時間T 1、 T2... Tm與高頻的施加功率P1、Ρ2·._ Pm的任一個或兩方。 由圖1 3說明此實施例的處理流程。首先，初期設定 是設定時間ΤΙ、T2、T3以及施加功率PI、P2、P3( 1 302) ，開始鈾刻（1 304)。蝕刻開始後計測蝕刻中的電漿發光強 度的監控値（ 1 306)。求出對監控値的變化量（ 1 308)，判定 變化量是否爲容許範圍以內（1 3 1 0)，若在容許範圍內的話 ，在該條件下進行藉由負載比反饋控制的蝕刻處理（1 3 1 2) 。若鈾刻終了的話（1314)，傳出/回收晶圓（1316)。在1310 的步驟中若由容許範圍偏移的話，變更次區域的數 (m)(1318)，進行時間 Tl、T2...Tm 與施加功率 PI、P2...Pm 的設定（ 1 320)，變更負載比進行處理。對於這種設定變更 被反覆複數次也無法順利處理的情形（1322)輸出警報 ( 1 324)。因若處理的晶圓的構造或蝕刻條件變更的話變更 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 批衣 訂 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 569338 A7 B7 五、發明説明（22) 量變化，故實際上需要預先製作儲存對應於各處理的資料 的資料庫，或者每一晶圓的處理儲存資料構築資料庫。 此外，在本實施例雖然敘述關於監控蝕刻中的電漿發 光強度而控制的方法，惟如圖5所示的實施例，藉由檢查 裝置檢查鈾刻終了後的晶圓，依該測定資料爲基礎進行步 驟1 3 1 0的判定也可以。而且，步驟1 3 1 0的判定條件如圖 1 1所示的實施例，用以針對CD値、選擇比、蝕刻速度進 行判定也可以。 [實施例6] 其次，說明本發明的第六實施例。本實施例是改變實 施例 1的 ECR電漿裝置，以使用感應耦合型電漿 (Inductively coupled plasma)源的電漿處理裝置，高頻電壓 的開關控制爲開關控制電漿生成用的高頻電壓。由圖14 說明此實施例。藉由高頻電源72對配設於真空處理室 20a外側的感應線圈71開關控制、施加13.56MHz的高頻 ，在真空處理室20a內使電漿產生。在設置有試樣的下部 電極27a連接有用以使離子加速的高頻偏壓電源28a。 在高頻電源72的接通（On)期間於電漿中產生離子’ 藉由偏壓用的高頻偏壓電源28a使離子被加速垂直入射於 晶圓，以進行晶圓的垂直蝕刻。在高頻電源72的斷開 (Off)期間電漿中的離子消滅，垂直方向的蝕刻停止’同 時包含於氣體中的反應生成物擴散沉積於晶圓。即產生與 開關控制施加於下部電極27a的高頻電壓相同的效果。藉 本紙張尺度適用中國國家標準（CNS ) A4規格（210'〆297公釐） ---------:批衣—，-----1T------0 (請先閱讀背面之注意事項再填寫本頁) -25- 569338 A7 B7 五、發明説明（23) 由此效果可維持均勻性或選擇比’可控制鈾刻的形狀（CD) 〇 高頻電源72的開關控制可與前述第一至第五實施例 所示的同樣地控制。而且，當然在實施例的裝置中開關控 制施加於下部電極27a的高頻電壓也可以。 [實施例7] 其次，說明本發明的第七實施例。本實施例是電漿處 理裝置以電容耦合方式的電漿處理裝置。由圖15說明此 實施例。在真空處理室20b內配設有兩片平行平板電極， 在上部電極82連接有電漿產生用的高頻電源81，在配置 有晶圓的下部電極27b連接有離子加速用的高頻偏壓電源 2 8b。在本實施例中與第六實施例一樣，開關控制任意高 頻電源，如前述第一至第五實施例所示地進行控制佳。 以上如果依照本發明的這些實施例，具有不使產能降 低，抑制每一片晶圓的加工尺寸的變動，可再現性佳地加 工晶圓。 此外，在這些實施例的蝕刻處理的資料使其記憶於電 漿處理裝置的控制裝置內也可以，且使其記憶於控制半導 體製造線的上位控制裝置也可以。而且，藉由利用網際網 路的網路連接半導體製造廠與製造裝置製造廠，以利用儲 存於製造裝置製造廠的資料也可以。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） t衣--^ (請先閲讀背面之注意事項再填寫本頁)Specifically, the CD after the Nth wafer is processed is shown in FIG. 12U) If only △ CD changes, return the CD to the target, and change only the proportion of T1 △ T1 to process the next wafer. If, for example, Fig. 12 (b) is shifted by ΔS only, 'only the amplitude ΔP 2 of the period T 2 is changed and the next wafer is processed', the selection ratio can be kept to the target value. Similarly, if the etching speed of Poiy-Si is only shifted by △ R, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) --------- ^ — u ----- IT ------ ^ (Please read the precautions on the back before filling this page) -23- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 569338 A7 ___B7_ V. Description of the invention (21), as shown in Figure 12 ( c) Only the ratio Δ T3 of the interval T3 is changed to maintain the uranium engraving speed of Poly-Si to the target plutonium. Even in the present embodiment, the width of the control that can be changed by controlling only the factors that are desired to be controlled is not so large, while keeping other factors approximately constant. However, when the same product is processed in large quantities under the same conditions, the original shape and the like do not change. Here, the purpose of the present invention is to make adjustments with the aim of making extremely small changes over time. [Embodiment 5] Next, a fifth embodiment of the present invention will be described. In this embodiment, the number of sub-regions (m) is changed during processing, and any one or both of the time T 1, T 2, ... T m and the applied power P 1, P 2. square. The processing flow of this embodiment will be described with reference to FIG. 13. First, the initial setting is to set the times T1, T2, and T3 and the applied powers PI, P2, and P3 (1 302) to start uranium engraving (1 304). After the start of the etching, the plasma emission intensity monitoring during the etching was measured (1 306). Calculate the amount of change in the monitor (1 308), determine whether the amount of change is within the allowable range (1 3 1 0), and if it is within the allowable range, perform an etching process controlled by load ratio feedback under these conditions ( 1 3 1 2). If the uranium is finished (1314), the wafer is transferred out / recovered (1316). If the allowable range is shifted in step 1310, the number of sub-regions (m) is changed (1318), and the time Tl, T2 ... Tm and the applied power PI, P2 ... Pm are set (1 320) , Change the load ratio for processing. An alarm (1 324) is output when such a setting change cannot be successfully handled repeatedly (1322). If the structure or etching conditions of the processed wafers are changed, the paper size will be changed to Chinese National Standard (CNS) A4 (210X297 mm). A batch of clothes stitching lines (please read the precautions on the back before filling this page) Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 569338 A7 B7 V. Description of the invention (22) The quantity changes, so in fact it is necessary to make a database that stores the data corresponding to each process in advance, or to construct data for each wafer's processing and storage data Library. In addition, although a method for controlling the plasma luminous intensity during etching is described in this embodiment, the embodiment shown in FIG. 5 uses an inspection device to inspect the wafer after the uranium etching is completed. According to the measurement data, It is also possible to perform the determination of step 1 3 1 0 on the basis. In addition, the determination conditions of step 1310 are as shown in the embodiment shown in FIG. 11, and it is also possible to determine the CD 値, the selection ratio, and the etching rate. [Embodiment 6] Next, a sixth embodiment of the present invention will be described. This embodiment is a modification of the ECR plasma device of Embodiment 1. A plasma processing device using an inductively coupled plasma source is used to switch the high-frequency voltage on and off to control the high-frequency voltage for plasma generation. . This embodiment will be described with reference to FIG. 14. The induction coil 71 disposed outside the vacuum processing chamber 20a is switched and controlled by a high-frequency power source 72, and a high frequency of 13.56 MHz is applied to generate plasma in the vacuum processing chamber 20a. A high-frequency bias power source 28a for accelerating ions is connected to the lower electrode 27a provided with the sample. Ions are generated in the plasma during the On period of the high-frequency power source 72. The high-frequency bias power source 28a for bias is used to accelerate the ions into the wafer perpendicularly to perform vertical etching of the wafer. During the off time of the high-frequency power source 72, the ions in the plasma are eliminated, and the etching in the vertical direction is stopped. At the same time, the reaction product contained in the gas is diffused and deposited on the wafer. That is, the same effect as the high-frequency voltage applied to the lower electrode 27a by the switch control is produced. Borrowed from this paper standard, it is applicable to China National Standard (CNS) A4 specification (210'〆297 mm) ---------: Approval—, -1T ------ 0 (Please (Please read the notes on the back before filling this page) -25- 569338 A7 B7 V. Description of the invention (23) This effect can maintain the uniformity or select the ratio of 'controllable uranium engraved shape (CD)' The switch control can be controlled in the same manner as that shown in the aforementioned first to fifth embodiments. It is needless to say that in the apparatus of the embodiment, the high-frequency voltage applied to the lower electrode 27a may be controlled by switching. [Embodiment 7] Next, a seventh embodiment of the present invention will be described. This embodiment is a plasma processing apparatus in which the plasma processing apparatus is capacitively coupled. This embodiment will be described with reference to Fig. 15. Two parallel flat electrodes are arranged in the vacuum processing chamber 20b. A high-frequency power source 81 for plasma generation is connected to the upper electrode 82, and a high-frequency bias voltage for ion acceleration is connected to the lower electrode 27b where the wafer is arranged. Power supply 2 8b. In this embodiment, like the sixth embodiment, the switch controls an arbitrary high-frequency power source, and the control is preferably performed as shown in the foregoing first to fifth embodiments. As described above, according to the embodiments of the present invention, it is possible to process a wafer with high reproducibility without reducing the productivity, suppressing the variation in the processing size of each wafer. The etching process data of these examples may be stored in the control device of the plasma processing apparatus, or may be stored in a higher-level control device that controls the semiconductor manufacturing line. Furthermore, it is also possible to use the data stored in the manufacturing equipment manufacturing plant by connecting the semiconductor manufacturing plant and the manufacturing equipment manufacturing plant by a network using the Internet. This paper size applies to China National Standard (CNS) A4 (210X297 mm) t-shirt-^ (Please read the precautions on the back before filling this page)
、1T 線 經濟部智慧財產¾員工消費合作社印製 -26-Line 1T Line Intellectual Property of the Ministry of Economics ¾ Printed by Employee Consumer Cooperatives -26-