TW565958B - Organic light-emitting diode display structure and the manufacturing process thereof - Google Patents

Abstract

The present invention relates to an organic light-emitting diode display structure and the manufacturing process thereof. The organic light-emitting diode display structure comprises a thin-film transistor array, plural organic light-emitting diodes and plural driving chips, wherein the thin-film transistor array is formed on the upper surface of the insulating substrate. The plural organic light-emitting diodes are fabricated on the upper surface of the thin-film transistor array. The plural organic light-emitting diodes are connected to the drain or source of the corresponding thin-film transistor respectively. The plural driving chips are fabricated on the upper surface of the insulating substrate outside the area occupied by the plural organic light-emitting diodes, so as to transmit signals to the thin film transistor array and drive the selected thin film transistor.

Description

565958 V. Description of the invention The technical field to which the invention belongs: The present invention relates to an organic light emitting diode display, especially an improved design of the structure and manufacturing process of the organic light emitting diode display, so as to improve the packaging protective cover and the display glass. Adhesion between substrates, and avoid contact failure or short circuit at the contact point of the driving wafer. Previous technology: Due to the diversified trend of information equipment, the demand for flat panel displays (FPDs) is increasingly urgent, and under the current trend of thin, short and power-saving markets in the world, cathode ray tubes (Cathode Ray Tube (CRT) has been gradually replaced by flat-panel displays. At present, the technologies used in FPD mainly include the following: plasma display (PDP), liquid crystal display (Liquid Crystal Display, LCD), electroluminescent display (Electroluminescent Display), light emitting diode (Light Emitting Diode) ), Vacuum Fluorescent Display (VFD), Field Emission Display (FED), and Electrochromic Display (E1ectrochromic c Display), etc.Organic Electroluminescent Display (Organic Electroluminescent Display) Light emitting diode (〇rganic Light Emitting Diodes, 0LED) display, according to the light-emitting materials used

565958 V. Description of the invention (2) The materials can be divided into two types: one is a small molecular type, and the other is a polymer light (Polymer Light Emitting Diode, PLED). Because the door has a knife machine = light diode, (0LED) has the following characteristics: no limitation of viewing angle, low manufacturing cost, high response speed (more than 100 times of liquid crystal), power saving, DC for portable machines Drive, wide temperature range available, W 5 and 5: With the miniaturization and thinning of the hardware equipment, etc., it meets the following requirements: = 1 device characteristics *; Therefore, 0LED technology can be widely used in display two-level products, including Enlarge miniature displays, digital cameras, personal digital assistants), smart pagers and phones, virtual personal digital phones, car audio displays, and other electronic consumer products. , 3 1 machine, the key components of the diode, including indium tin oxide Tin 0Xlde 'IT0) conductive film, small molecules or ancient eight ^ purity metal materials and drivers 丨 c, etc., cutting materials, ink printing method (Applicable to polymer organic materials 1 machine materials) or spin-coating method / 1 τ 〇 transparent conductive film electrode (anode) plate all belong to). = Thermal evaporation or coating on the structure, where the organic film is made of electricity Hole note, Ί / / / belong to: the light-emitting layer and the electron transport layer. & Hole transfer layer, organic Due to organic materials and metals, some organic materials are very susceptible to contamination. • Oxygen ::: Sensory research is well documented, and it is used as an LED contact electrode for most of the effect of milk 4. One knife metal Yigu is easy to be corroded by air or its 565958 V. Description of the invention (3) Other oxygen-containing environments cause corrosion phenomena, which will cause rapid degradation of components, so when the organic light-emitting diode is completed, 'Subject to encapsulation protection. Please refer to Figures 1A to 1D, which are schematic cross-sectional views showing the steps of an active moment 0LED process of a conventional technology. First, as shown in Figure 1a, a thin film transistor (TFT) array 20, the thin film array = array 20 includes a number of TFTs, pixel electrodes (pixei eiecti_〇d spear = parent: Γ dimiao line and data line diagram # (the above components do not show ΤΐΓ the glass substrate 10, ㈣ The parts are all light-emitting layer / metal layer. The above method depends on the used material. The organic material used for the deposition is a small molecule or polymer material. As shown in Figure 1c, The main part of the polar body is crying, and it is sealed. # 士 炫 服 显 不 性-glass cover 40 for dreams :: Management 'where' Figure-C is shown on the glass substrate 10 ^ Private column, and then leave the reaction chamber, and perform a combined action, such as the K_D driver, chip and / or flexible row, line (FPC) 50 pressure panel of each pixel-non-neutral, in order to provide the organic light emitting diode Body display number. Several of them are source electrodes; ::: 4 film transistor's required operating voltage and signal), are transparent Display piano / chip (s〇urce driver 1C, not shown, usually can be connected to the bottom edge of each pixel element soil plate 0 on the broken glass surface of the board Z data line, to connect a printed circuit board page 7 565958 V. Description of the invention (4) ____ and each of them) :: ΐ (such as the second pole driving chip is set on the printed circuit board, the second array; Σ. And the right dry gate driver chip element is worthwhile. It is connected to each image crystal glass package via scan line. The gate driver chip can generally be covered by the whole surface of the glass substrate. 】. All have == on i:;: r cover 4 ° is pressed on the organic light-emitting == " The glass package 盍 40 and the glass substrate 10 have poor adhesion: easy to Luo, moreover, The driving wafers are also laminated on the film layer 30, so that the pressing of the driving wafers-a short circuit occurs. + Good 4 = This is an urgent need for the structure and manufacturing of existing organic light emitting diode displays.裎 Improve the design so as to effectively solve the above problems. Summary of the invention: The main purpose of the present invention That is to provide an improved design of the structure and process of the organic diode to display the benefits of the ancient organic ceramics, in order to improve the adhesion between the package protection seedling and the glass substrate of the repeater, and to avoid driving the chip. Point. Poor contact or short circuit.

565958 Five 'invention description (5) The present invention discloses a light-emitting structure of an organic light-emitting diode display. The device includes a thin-film transistor array, a plurality of; a machine; a light 2 driving chip ..., the thin-film transistor array. = Manufactured on the surface of the thin film, several organic light-emitting diodes are used as the polar body; don't ": the top surface of the body array" and the plurality of organic light-emitting diodes = the plurality of organic light-emitting diodes: transistor array The signal is transmitted to the film by agitation, ί ί ', and the selected film transistor is moved. i is the inn ::: top surface of a square array of organic light-emitting diode displays, = organic light-emitting diodes in the thin-film transistor should not be thin-film transistors = photodiode systems and the plurality of organic The light emitting diode occupies i; ::; r edge of the upper surface of the substrate, among which xi & * outside of the membrane film S 舻 舻 Λ several drive chips transmit signals to the thin film array To drive the selected thin film transistor. . To Xuancun implementation mode: σ month see Figure II A to Figure II β, its Λ / X ^ ^ look for the system is one of the active matrix OLED process steps that you can access in the present invention. Li Menping 乂 Jia Bega evil look ~ private profile is not intended. Shield

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The method is used as an example to explain in detail that the present invention only forms a plurality of organic light emitting diodes on a specific area of an insulating substrate. In this way, the edge substrate can be avoided to place a driving chip and a flexible drain. The line and the area used to protect the packaging cover of the organic rabbit photodiode film layer are not covered by the organic light emitting diode film layer, so that the packaging cover can be directly adhered to the insulating substrate and is not easy to drop off, and The driving chip can be directly pressed on the metal pad on the insulating substrate to solve the problem of poor contact or short circuit, and improve the process yield. First, as shown in FIG. 2A, a thin film transistor (TFT) array 2000 is fabricated on a glass substrate 100. The thin film transistor array 2000 includes a plurality of τ ρ τ, pixel electrodes ) And the scan line and lean line diagram 纵横 crisscrossed with each other (the above components are not shown), this part is the same as the previous step shown in Figure 1A. Then, as shown in FIG. 2B, in the private sequence of the organic light emitting diode film layer, a shielding cover 25 is used to set a glass packaging cover and / or a plurality of flexible wiring / driver chips. The area on the glass substrate 500 is covered, so that the organic light-emitting diode film layer 300 is only vapor-deposited on the glass substrate of the thin film transistor array = area, and the glass substrate in the remaining areas 〇 does not cover the organic light-emitting diode film layer 3Q0. Next, the shielding cover 250 is removed, and a glass cover 400 is directly set on a predetermined area of the glass substrate 1GG, as shown in FIG. The organic light-emitting diode film layer is

565958 V. Description of the invention (7) Encapsulation protection process' to prevent water vapor or oxygen from damaging the plurality of organic light emitting bodies, the organic layer and the metal layer of the body. After that, the reaction chamber is left and a step of directly pressing the driving wafer and / or the flexible wiring line 500 on the pre-field of the glass substrate 100 is performed, as shown in FIG. 2D, so as to provide the organic light emission. Operating voltage and signal required by the thin film transistor in each pixel element on the display panel of the diode. In another embodiment of the present invention, a spin coating method, an inkjet printing method, or other appropriate methods may be used to coat the organic light-emitting diode film layer 300 on the entire glass substrate, and then The glass substrate 100 that is predetermined to set the glass package cover 400 and / or the plurality of flexible wiring / drive chips 500 is made by dry etching or left off or other suitable methods. The area of the organic light emitting diode film layer 300 is removed. After that, the glass cover 400 and / or the plurality of flexible wiring / drive crystals 500 are directly set in a predetermined area of the glass substrate 100 according to the above. Among them, the method of peeling off (14.7 off) is before the organic light-emitting diode film layer 300 is coated on the entire surface of the glass substrate. Array "=: = = Organic light-emitting diode film layer: top and sticky ::: layer one factory: = night this layer thick photoresistance peeling off, the organic light-emitting diode film layer 〇 ( ) As soon as Ik arrives, you can set the broken secret nn and / or the plurality of flexible rows ^ at the flat 400 shirt t, and directly sign the glass substrate of the Japanese film 00. The broken glass cover 400 and / or the plurality of flexible cables / drives are sighed on the 100 area.

mi p. 565958 V. Description of the invention (8) Moving chip 500. In this way, the packaging cover can be directly adhered to the insulating substrate without falling off easily, and the driving chip can be directly pressed onto the metal pad on the insulating substrate to solve the problem of poor contact or short circuit. The above description uses a preferred embodiment to describe the present invention in detail, but does not limit the scope of the present invention, and those skilled in the art will understand that appropriate changes and adjustments will still be made without losing the scope of the present invention. The gist does not depart from the spirit and scope of the present invention.

Page 565958 Schematic illustrations Schematic descriptions of the schematics: The above description explains the easy to light 45 — can: be in the middle, its formula, the points attached to the description of the description of the details and details Let ’s take a look at the 4el rectangular master ’s technique and technique of internal borrowing techniques, which is shown in the figure; it is the meaning of the figure, and T ϋ is the step A5 of Figure L. Actually better than ο, the diagram clearly shows that this side is a sectional system. The steps are made by Cheng-D, D, and D. LE to Α. The two-moment diagram element description: 10, 100 glass substrate 3 0 3 0 0 Organic light-emitting diode film layer 5 0, 5 0 0 Flexible wiring / driver chip 2 0 2 0 0 Thin film transistor array 4 0, 4 0 0 Glass cover 2 5 0 Shield

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Claims (1)

6. Patent application scope h A photovoltaic device structure, including a thin-film transistor array, which is a plurality of organic light-emitting diodes ^ an upper surface of an insulating substrate; the surface, and the plurality of organic two t are made on the thin film The drain or source phase of the crystal on the transistor array = the first two-electrode system and the corresponding thin-film electrical plurality of driving chips respectively, Lizhu 2 and the insulating base and the plurality of organic light-emitting diodes outside the occupied area. . The upper surface of the native Chinese is used to drive the selected film. 2 seals, please special: 1 ,,? Item 1: The structure of the optoelectronic device described further includes-the size of the occupied area ^ the size of the package r is larger than the surface of the organic light emitting diode, and it completely covers the contact and is attached to the table on the insulating substrate . The organic light-emitting diode and the thin-film transistor array, the photovoltaic surface described in item i of the patent application scope, and the two ends of the surface brush circuit Li on the insulating substrate outside the "occupied area" are respectively connected with the The printed circuit board on the outside of the insulating substrate is connected to the wires in the insulating substrate. The photovoltaic device structure described in item 1 of the scope, wherein the == wafer is directly formed in the plurality of organic light emitting diodes. & domain outside the upper surface of the insulating substrate. Page 14 565958 6. Scope of patent application 5 · The structure of the optoelectronic device as described in item 1 of the scope of patent application: a plurality of driving chips are press-fitted to the insulation outside the area occupied by the plurality of polar bodies The top surface of the substrate. 6 · A method for manufacturing an organic light emitting diode display, including forming a thin film transistor array on an upper surface of an insulating substrate; manufacturing a plurality of organic light emitting diodes in the thin film transistor array, wherein the plurality of organic light emitting diodes The electrode system is respectively connected to the drain or source of the corresponding body; and a plurality of driving chips are fabricated on the upper surface of the insulating substrate other than the plurality of organic light emitting diodes to drive the selected body. 7. The method as described in item 6 of the scope of patent application, further comprising sealing the seedlings in the size occupied by the organic light-emitting diode, attaching to the upper surface of the insulating substrate, and completely covering the body. With the thin film transistor array. Person 8: The method described in item 6 of the scope of patent application, the f-process selected in the peeling = the step ‘use a mask ^ table life method’ to make the multiple surface areas with respect. The upper surface of the array ’does not cover the upper surface of the machine. The area occupied by the thin film transistor, the area occupied by the thin film transistor, the large size of the transistor, and the light emitting diode is in contact with the light emitting diode. 565958 VI. Applying for the patent scope 9 The method described in item 6 of the scope of the patent application, further comprising-placing a plurality of flexible cables on the insulation board like the insulating substrate # The edges of the substrate outside the area occupied by the diodes are connected to both ends of the respective flexible wirings to the insulated brush circuit board and the wires in the insulating substrate. 10. The method as described in Application 6: The method described in Item 6 of Jewelry Fan Shiwei, wherein the plurality of organic materials having-is a small molecule organic material. 11. The method described in item 6 of the scope of claim 21, wherein the plurality of organic bodies τ of the polar body u and the plurality of meaningful organic materials are a polymer. Page 16