CN108269835A - Display base plate and preparation method thereof, display device - Google Patents
Display base plate and preparation method thereof, display device Download PDFInfo
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- CN108269835A CN108269835A CN201810054290.6A CN201810054290A CN108269835A CN 108269835 A CN108269835 A CN 108269835A CN 201810054290 A CN201810054290 A CN 201810054290A CN 108269835 A CN108269835 A CN 108269835A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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Abstract
The present invention provides display base plates and preparation method thereof and display device.The display base plate includes the viewing area being set on substrate, include at least one PMOLED in the bending region of viewing area, since PMOLED does not utilize thin film transistor (TFT) to drive, display performance is influenced so as to effectively prevent thin film transistor (TFT) by caused electrical variation is bent, further, include organic insulator between substrate and first OLED cell, the organic insulator includes organic material, since organic material is for inorganic material, with good strain elasticity, the ability resistant to bending in bending region can be improved.Using the production method of display base plate provided by the invention, the display life of viewing area can be effectively improved.The display device provided by the invention for including above-mentioned display base plate, the bending region of viewing area include at least one PMOLED, can to avoid being bent because of thin film transistor (TFT) caused by display performance change.
Description
Technical field
The present invention relates to display technology field more particularly to display base plate and preparation method thereof, display devices.
Background technology
OLED (Organic LightEmitting Diode, Organic Light Emitting Diode) is also known as organic electroluminescent, has
Electromechanical laser display or organic luminous semiconductor, OLED display technologies are due to self-luminous, wide viewing angle, high contrast, low consumption
It the advantages that and being thinned, is more and more widely paid close attention to.
According to the difference of type of drive, OLED can be divided into PMOLED, and (Passive Matrix OLED, passive type driving have
Machine light emitting diode) and two kinds of AMOLED (Active Matrix OLED, active driving Organic Light Emitting Diode).With in glass
For the array of display (display unit that may include multiple array arrangements) set on glass substrate, PMOLED array of display it is same
The same nature electrode of row display unit be it is shared, and the same nature electrode of same row display unit be also it is shared,
It is shone by the display unit to the control of row-column electrode its intersection, PMOLED has simple in structure, driving lead
The characteristics such as less, peripheral circuit occupied area is few；And AMOLED array of display is equipped in each display unit with switch work(
Can thin film transistor (TFT), and connect the peripheral drive circuit of thin film transistor (TFT) and array of display whole system is integrated in same base
On plate, AMOLED has the characteristics such as response speed block, high contrast, energy saving.
Flexible display technologies currently based on OLED are to make AMOLED array of display on flexible substrates, still, are being passed through
It crosses after repeatedly bending, the service life of bending region display unit can reduce.
Invention content
The technical problem to be solved by the present invention is in OLED display, the AMOLED of bent area is after bending due to film
The problem of electrical variation of transistor leads to service life reduction.
To solve the above problems, the present invention provides a kind of display base plate, including substrate, it is set to showing on the substrate
Show area and the power source drive unit outside the viewing area, the viewing area includes bending region, which is characterized in that institute
It states bending region and includes at least one PMOLED, the PMOLED is included in first set on the substrate in the bending region
OLED cell, the PMOLED are electrically connected with the power source drive unit.
Optionally, organic insulator, the organic insulator packet are included between the substrate and first OLED cell
Include organic material.
Optionally, the viewing area further includes non-bending region, and the non-bending region includes at least one AMOLED, institute
It states AMOLED and is included in the second OLED cell set on the substrate in the non-bending region, the substrate and the 2nd OLED
Include thin film transistor (TFT) between unit, the AMOLED is electrically connected with the power source drive unit.
Optionally, the thin film transistor (TFT) is included in the active layer set on the substrate of the non-bent area, gate electrode, source
Electrode and drain electrode, the drain electrode are electrically connected with second OLED cell.
Optionally, barrier metal layer and source and drain metal are included between the substrate of the bent area and first OLED cell
Layer, the barrier metal layer formed with the gate electrode using same film-forming process, the Source and drain metal level and the source electrode and/
Or the drain electrode is formed using same film-forming process.
Optionally, organic insulator is included between the substrate and first OLED cell, the organic insulator is set
It is placed between the barrier metal layer and the Source and drain metal level.
The present invention also provides a kind of display device, including above-mentioned display base plate.
The present invention also provides the production method of above-mentioned display base plate, including：It is made on the substrate in the bending region
At least one PMOLED, the PMOLED are included in the first OLED cell formed on the substrate in the bending region, and make institute
The power source drive unit for stating PMOLED and display base plate connects.
Optionally, the viewing area further includes non-bending region, and the production method is additionally included in the non-bending region
Substrate on make at least one AMOLED, and the AMOLED is made to be connect with the power source drive unit.
Optionally, PMOLED is made on the substrate in the bending region and is made on the substrate in the non-bending region
AMOLED includes the following steps：
Thin film transistor (TFT) is formed on the substrate in the non-bending region, the thin film transistor (TFT) includes active layer, grid electricity
Pole, source electrode and drain electrode, and barrier metal layer and Source and drain metal level are formed on the substrate in the bending region, the grid electricity
Pole is formed with the barrier metal layer using same film-forming process, the source electrode and the drain electrode and Source and drain metal level profit
It is formed with same film-forming process；Form planarization layer, the planarization layer covers the source electrode, the drain electrode and described
Source and drain metal level；And form first OLED cell and described non-on the planarization layer surface in the bending region
The planarization layer surface for bending region forms the second OLED cell, and causes second OLED cell and drain electrode electricity
Connection.
Display base plate provided by the invention, bending region on substrate set at least one PMOLED, the PMOLED
It is electrically connected with the power source drive unit of display base plate, the thin film transistor (TFT) being electrically connected so as to bend region that can be not provided with OLED,
Can effectively avoid thin film transistor (TFT) influences OLED luminescent properties by caused electrical variation is bent.
Further, organic insulator, the organic insulator are provided between substrate and first OLED cell
Including organic material, since organic material is for inorganic material, there is good strain elasticity, bent area can be improved
The ability resistant to bending in domain.
The production method of above-mentioned display base plate provided by the invention makes at least one on the substrate in bending region
PMOLED, the PMOLED include the first OLED cell formed over the substrate, are not formed easily by curved in bending region
The thin film transistor (TFT) influenced is rolled over, display life can be effectively improved.
The display device provided by the invention for including above-mentioned display base plate includes at least one in the bending region of viewing area
PMOLED, it is possible to prevente effectively from the display performance caused by thin film transistor (TFT) is bent changes.
Description of the drawings
Fig. 1 is the floor map of the display base plate viewing area of the embodiment of the present invention.
Fig. 2 is the diagrammatic cross-section on A-B directions in Fig. 1.
Fig. 3 is that the embodiment of the present invention makes PMOLED in bending region and shows in the flow that non-bending region makes AMOLED
It is intended to.
Reference sign：
100- display base plates；101- substrates；10- bends region；The non-bending regions of 20-；200-PMOLED；300-
AMOLED；The first OLED cells of 210-；The second OLED cells of 310-；320- driving circuits；102- buffer layers；104- active layers；
106- gate electrodes；106'- barrier metal layers；108a- source electrodes；108b- drain electrodes；108'- Source and drain metal levels；105- gate insulators
Layer；107- interlayer insulating films；109- organic insulators；110- planarization layers；The 211- first anode；The first organic light emissions of 212-
Layer；The first cathodes of 213-；311- second plates；The second organic luminous layers of 312-；The second cathodes of 313-；The first confining layers of 120-；
121- first limits unit；Pole unit is isolated in 122-；The second confining layers of 130-；131- second limits unit；132- thirds limit
Unit；140- encapsulated layers.
Specific embodiment
For the purpose of the present invention, technical solution and advantage is more clearly understood, develop simultaneously embodiment referring to the drawings,
Display base plate to the present invention and preparation method thereof and display device are described in further detail.It should be noted that attached drawing is adopted
With very simplified form and using non-accurate ratio, only to convenience, the embodiment of the present invention is lucidly aided in illustrating
Purpose.
Term " first " " second " in the specification and in the claims etc. is used between similar element distinguish,
And it is not necessarily for describing certain order or time sequencing.It is appreciated that in the appropriate case, these terms so used can replace
It changes, such as may be such that invention as described herein embodiment can be different from as described herein or shown other and sequentially grasp
Make.Similar, if method described herein includes series of steps, and the sequence of these steps presented herein not must
Must be the unique order that can perform these steps, and the step described in some can be omitted and/or some are not described here its
He can be added to this method at step.If the component of the embodiment of the present invention is identical with the component in other icons in figure, although
These components can all be recognized easily in all figures, but in order to make the explanation of icon apparent, this specification will not be by institute
The label for having identical component is marked in each figure.
A kind of flexible display technologies based on OLED are to make array of display on flexible substrates, including multiple displays
Unit, each display unit may include one or more AMOLED, and AMOLED passes through the film crystal that is formed on substrate
Pipe and driving circuit driving OLED shine, and (i.e. Active control) is controlled so as to fulfill to the independent switch of each display unit.
But using the oled display substrate that the above method is formed after bending repeatedly, bending region compared to non-bending region,
Display performance declines.Inventor it has been investigated that, the above-mentioned display base plate based on AMOLED array of display is used for when being bent
Electrically there is different degrees of decline in the thin film transistor (TFT) of control OLED display unit.Inventor further study show that, by
Include the active layer formed on substrate, gate electrode, source electrode, drain electrode and for making these electrodes in thin film transistor (TFT)
The inorganic layer of insulation, and the tensile modulus of elasticity of inorganic material is larger, i.e. the stress caused by bending is larger, thus easily leads
Fracture, especially active layer are caused, since its thickness is smaller, after being broken due to bending so that between source electrode and drain electrode
Conducting channel changed, so as to greatly affected the electrical of thin film transistor (TFT), lead to the display of OLED display unit
Hydraulic performance decline.
Based on the studies above, the embodiment of the present invention provides a kind of display base plate and forming method thereof and a kind of display device.
The present embodiment introduces a kind of display base plate first.Fig. 1 is the flat of 100 viewing area of display base plate of the embodiment of the present invention
Face schematic diagram.Display base plate 100 includes substrate 101 in the present embodiment, and viewing area, the viewing area packet are provided on substrate 101
Bending region 10 (being represented with dotted line frame) and non-bending region 20 are included, is both provided in bending region 10 and non-bending region 20 aobvious
Show unit, these display units can specifically include one or more pixels of array of display that make on the substrate 101, with into
Row image is shown.It should be noted that, although the bending region 10 of 100 viewing area range of display base plate is basically illustrated in Fig. 1
Region 20 is bent, and bend the part intermediate region that region 10 is illustrated as 100 viewing area of display base plate, but this field skill with non-
Art personnel should be appreciated that the present embodiment emphasis illustrates the display unit for bending region 10, the bent area of display base plate 100
Domain can also include the part of non-display area, also, the bending region 10 of display base plate 100 can also include the both ends of viewing area
Region.
In the present embodiment, the display unit for bending region 10 and the setting of non-bending region 20 can be according to the difference of type of drive
It is distinguished, specifically, each display unit in bending region 10 includes a passive organic light-emitting diode (hereinafter referred to as
PMOLED 200) rather than bending region 20 each display unit include an active organic light-emitting diode (hereinafter referred to as
AMOLED 300).In another embodiment, the part display unit in bending region 10 includes PMOLED 200, and further include
AMOLED 300.PMOLED 200 and AMOLED 300 described in the present embodiment can be used to represent to set on display base plate 100
The minimum recurring unit for being used for showing image, also, in Fig. 1, the PMOLED 200 of display base plate 100 and AMOLED 300
It is on the substrate 101 parallel to each other and equally distributed rows and columns distribution, but in other embodiments, PMOLED 200
It can also be arranged on the substrate 101, and what is formed can also be mutual with other regularity or non-regularity with AMOLED 300
Mutually not parallel ranks.
PMOLED 200 and 300 control methods of AMOLED are described below.
On the one hand, the PMOLED 200 that bending region 10 is set may include the first OLED cell 210, since it belongs to passive
(or passive) drives, and directly the PMOLED 200 for bending region 10 can be driven by PMOLED drivers.PMOLED drives
Device can directly connect for example, by row scan module and column scan module with the electrode of the first OLED cell 210 of PMOLED 200
Connect, for example, row scan module may be structured to scanning signal be applied to connect with PMOLED 200 anode line (L1 in such as Fig. 1,
L2, L3, L4..., thick line represent), column scan module is configured to for data-signal to be applied to the moon connecting with PMOLED 200
Polar curve (in such as Fig. 1 C1, C2 ...).
On the other hand, the AMOLED 300 that non-bending region 20 is set may include the second OLED cell 310 and for driving
The driving circuit 320 of dynamic second OLED cell 310, driving circuit 320 include carrying out shutdown control to the second OLED cell 310
The thin film transistor (TFT) (TFT) of system.Also, the second OLED cell 310 and driving circuit 320 are available to be set to display base plate
AMOLED drivers outside 100 viewing areas are controlled, for example, AMOLED drivers may include that scanner driver and data are driven
Dynamic device, wherein, scanner driver may be structured to scanning signal and be applied to scan line (or the grid being connect with driving circuit 320
Line, such as G1, G2, G3, G4... in Fig. 1), data driver may be structured to data-signal being applied to be connected with driving circuit 320
The data line (D1, D2 in such as Fig. 1, D3, D4 ...) connect.It should be noted that though it is shown that the driving line intersected in Fig. 1
Road, but these lines are only used for the display unit arrangement in schematically illustrate bending region 10 and non-bending region 20 and to differences
The control method of region display unit, it is impossible to be equal to the plane pattern of viewing area on substrate 101 in practice.
Driving circuit 320 in the present embodiment, on the substrate 101 for setting or being formed in each 300 region of AMOLED,
And connect with the second OLED cell 310 of same AMOLED 300, for other setting signals independent or with display base plate 100
The second OLED cell 310 in co- controlling AMOLED 300 shines, and driving circuit 320 includes at least a such as film crystal
The active parts of (TFT) is managed, in an alternative embodiment of the invention, driving circuit 320 can include such as two thin film transistor (TFT)s
With a capacitance (2T1C structures), so as to the shutdown that preferably controls the second OLED cell 310 in AMOLED 300 luminous with
And the characteristics such as brightness holding, however, the present invention is not limited thereto.
In the present embodiment, PMOLED drivers and AMOLED drivers can belong to the power supply control of display base plate 100 singly
A part for member, also, PMOLED drivers and AMOLED drivers can be set to other than the viewing area of display base plate 100
Region, PMOLED drivers and AMOLED drivers can be set in the form of IC chip and can be directly mounted at thereon
It is provided in the substrate 101 of PMOLED300 and AMOLED200, PMOLED drivers and AMOLED drivers can be mounted on flexibility
On printed circuit film, it can adhere to or be formed directly on substrate 101 in the form of carrier package part (TCP).PMOLED drives
Dynamic device and AMOLED drivers individually addressing can control the position of some PMOLED 200 and some AMOLED 300
It puts, inputs driving current to the PMOLED 200 or AMOLED 300 being correspondingly arranged in the position so that the first OLED cell 210
Or second OLED cell 310 shine.
Although it should be noted that as shown in Figure 1, the first OLED cell 210 and the second OLED cell 310 in the present embodiment
Light-emitting area (being represented with rectangular shadow region) it is identical, however, those skilled in the art should understand that, in a display base plate 100
In, the light-emitting area of the first OLED cell 210 and the second OLED cell 310 can also be different.Also, for multiple in Fig. 1
Spacing between PMOLED 200 and multiple AMOLED 300 is, for example, less than 100 microns, but the essence of the spacing and manufacturing equipment
The resolution ratio of degree and display base plate 100 is related.For multiple first OLED cells 210 and multiple second OLED cells 310,
Light color can be gone out with different by the make forming different luminous organic materials.When being set to different location
The first OLED cell 210 and the second OLED cell 310 with respectively independent or can by colored filter (or color converting layer)
The light of RGB three primary colours is sent out, colored display can then be realized by the power control unit of display base plate 100, the present invention is unlimited
In this.
Fig. 2 is the diagrammatic cross-section on A-B directions in Fig. 1.A specifically, PMOLED Fig. 2 shows A-B directions
200 and the diagrammatic cross-section perpendicular to 101 surface direction of substrate of an AMOLED 300.Below in conjunction with Fig. 1 and Fig. 2 to display
Substrate 100 and preparation method thereof is described in detail.It will be appreciated by those skilled in the art that it may be provided on display base plate 100
Multiple same or similar PMOLED 200 and AMOLED 300, by formed or set on the substrate 101 include it is at least one
The bending region of PMOLED 200 and the non-bending region including at least one AMOLED 300, by a plurality of 200 Hes of PMOLED
The region of AMOLED 300 may finally form display base plate 100 as viewing area.According to following to 200 He of PMOLED
The description of one AMOLED 300, the display base plate 100 about the present invention will be apparent from.
As shown in Fig. 2, display base plate 100 includes substrate 101, the viewing area being set on substrate 101, viewing area includes curved
Folding area domain 10 and non-bending region 20, include PMOLED 200 in bending region 10, include AMOLED in non-bending region 20
300。
In the present embodiment, substrate 101 is flexible substrate, it may include plastic material, plastic material can be from following material
The organic material selected in the group of composition：Polyether sulfone (PES), polyacrylate (PAR), polyetherimide (PEI), poly- naphthalene diformazan
Ethyl glycol ester (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimides (PI),
Makrolon (PC), cellulose triacetate (TAC) and cellulose-acetate propionate (CAP), they are the organic materials of insulation.
Buffer layer 102 may be provided at or be formed on the substrate 101.Buffer layer 102 can provide flat at the top of substrate 101
Smooth surface, and can stop foreign substance or moisture infiltration across substrate 101.In certain embodiments, buffer layer 102 can wrap
Include such as inorganic material of silica, silicon nitride, silicon oxynitride, aluminium oxide, aluminium nitride, titanium oxide or titanium nitride and/or such as
The organic material of polyimides, polyester or acrylic, and may include the stacked body of above-mentioned multiple material or using above-mentioned more
The stacked body of kind material is formed.It is easily broken off when being bent due to the buffer layer 102 that inorganic material is formed, in order to avoid produced
Crack growth influence the reliability of display base plate, in preferred embodiment, only can set or be formed buffering in non-bending region 20
Layer 102, and it is not provided with or is formed buffer layer 102 in bending region 10.It, can be curved when buffer layer 102 includes organic material
Folding area domain 10 and non-bending region 20 all set or are formed buffer layer 102.
Using SEMICONDUCTING THIN FILM TECHNOLOGY, the driving circuit 320 of AMOLED 300 can be formed in non-bending region 20, wherein
Thin film transistor (TFT) may include active layer 104, gate electrode 106, source electrode 108a and drain electrode 108b.
Hereinafter, the setting that wherein active layer 104, gate electrode 106, source electrode 108a and drain electrode 108b sequences will be described
Or it is formed as the thin film transistor (TFT) of top-gated polar form.However, the present invention is not limited thereto, each of such as bottom gate polar form can also be used
The thin film transistor (TFT) of type.
Active layer 104 may include semi-conducting material, such as non-crystalline silicon or polysilicon, however, the present invention is not limited thereto, it is active
Layer 104 may include a variety of materials, and in certain embodiments, active layer may include organic semiconducting materials etc..
In certain embodiments, active layer may include oxide semiconductor material, for example, active layer may include from such as
Zinc, indium, gallium, tin, cadmium and germanium 12 race's metallic elements, 13 race's metallic elements and 14 race's metallic elements and combinations thereof in the material that selects
The oxide of material.
Gate insulating layer 105 be may be provided at or be formed on active layer 104.Gate insulating layer 105 makes gate electrode 106 with having
Active layer 104 insulate.Gate insulating layer 105 can be the inorganic materials for including such as silica and/or silicon nitride individual layer or
Multilayer.
Gate electrode 106 be may be provided at or be formed on gate insulating layer 105.Gate electrode 106 may be connected to AMOLED 300
Gate line, wherein, via the gate line to thin film transistor (TFT) apply conduction and cut-off signal.
Gate electrode 106 may include the metal material of rather low resistance.Gate electrode 106 may be configured as or be formed as including for example
The single-layer or multi-layer of at least one of aluminium, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, molybdenum, titanium, tungsten and copper.
Interlayer insulating film 107 be may be provided at or be formed on gate electrode 106.Interlayer insulating film 107 make source electrode 108a and
Each and gate electrode 106 in drain electrode 108b insulate.Interlayer insulating film 107 may be configured as or be formed as including inorganic material
Single-layer or multi-layer.In a preferred embodiment, for example, inorganic material can be metal oxide or metal nitride.In other realities
It applies in example, inorganic material may include silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, tantalum oxide, hafnium oxide or oxidation
Zirconium etc..
Source electrode 108a and drain electrode 108b be may be provided at or are formed on interlayer insulating film 107.Source electrode 108a and leakage
Electrode 108b may be configured as or be formed as including aluminium, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, molybdenum, titanium, tungsten and copper
At least one of single-layer or multi-layer.Source electrode 108a and drain electrode 108b can be formed using same patterning process, and
Source region and the drain region of active layer 104 are electrically connected to by the contact hole for being set to interlayer insulating film 107 and gate insulating layer 105.
In the present embodiment, above-mentioned thin film transistor (TFT) is set or is formed on the substrate 101 in non-bending region 20, and in bent area
On the substrate 101 in domain 10, since that set or be formed is PMOLED 200, so can not be set for example, by the method for etching
Put or formed above-mentioned thin film transistor (TFT), be particularly due to using inorganic material formed active layer 104, gate insulating layer 105 and
Its ability resistant to bending of interlayer insulating film 107 is poor, is easily broken off when being bent, it is therefore preferable that in embodiment, in bending region 10
Substrate 101 on, can utilize and it is non-bending region 20 gate electrode 106, source electrode 108a and the same film forming of drain electrode 108b
Technique and same patterning process set or are formed barrier metal layer 106', Source and drain metal level 108' in bending region 10, so as to have
Conducive to being electrically connected between AMOLED 300 and between AMOLED 300 and power source drive unit, barrier metal layer 106' and source and drain
Metal layer 108' can utilize the pattern identical with the gate electrode of thin film transistor (TFT) 106, source electrode 108a and drain electrode 108b and
Technique sets or is formed, i.e., for barrier metal layer 106' and Source and drain metal level 108', can utilize viewing area all setting or shape
Light shield into AMOLED 300 is made.However, it is desirable to explanation, be set to bending region 10 barrier metal layer 106' and
Source and drain metal level 108' is not used to driving PMOLED200, thus in an other embodiment, can not be set in bending region 10
It puts and is can be designed as between barrier metal layer 106' and Source and drain metal level 108', AMOLED 300 and power source drive unit around bending
Area 10 is electrically connected.
Further, it in preferred embodiment, between barrier metal layer 106' and Source and drain metal level 108', also sets up or is formed
Organic insulator 109, organic insulator 109 is so that the Source and drain metal level 108' and Source and drain metal level 108' in bending region 10 are exhausted
Edge, certainly, can also be in substrate when being not provided with or formed barrier metal layer 106' and Source and drain metal level 108' in bending region 10
Organic insulator 109 is set or formed on 101 so as to increase the bending resistance in bending region 10.Organic insulator 109 includes
Organic material, such as polymaleic anhydride aminostyryl (PASMa), polymethyl methacrylate (PMMA) or polystyrene (PS)
It is one or more in grade high molecular materials, but not limited to this, organic insulator 109 may also include the polymer with phenolic group and spread out
Biology, acrylic polymer, acid imide polymer, fragrant ether polymer, acylamide polymer, fluorine-based polymer, to two
Toluene Type of Collective object, vinyl alcohol polymer or their mixture etc., organic insulator 109 can include various with good
The organic material of good strain elasticity.Organic insulator 109 can be formed for example, by the techniques such as spin coating or inkjet printing (IJP).
In another embodiment, thickness can also be set in the setting of 200 regions of PMOLED or formation in bending region 10
Inorganic material layer (can include the material identical with gate insulating layer 105 or interlayer insulating film 107) bends region 10 to improve
Barrier metal layer 106' and Source and drain metal level 108' adhesive force and improve barrier metal layer 106' and Source and drain metal level 108' with
The electrical connectivity in other regions.
After above-mentioned source electrode 108a, drain electrode 108b and Source and drain metal level 108' is formed, it can be formed above it flat
Smoothization layer 110, planarization layer 110 may be configured as or be formed as covering the thin film transistor (TFT) in non-bending region 20 and bending region
10 Source and drain metal level 108', planarization layer 110 can also cover remaining 101 surface of substrate for being provided with thin film transistor (TFT), from
And solve due to level error (step difference) caused by thin film transistor (TFT), organic insulator 109, interlayer insulating film 108 etc., it is flat
Bending region 10 and non-bending 20 gap that may be present of region can also be filled by changing layer 110.Planarization layer 110 may be configured as or
Be formed as the single-layer or multi-layer for including organic material.Organic material may include such as polymethyl methacrylate (PMMA) or polyphenyl
The polymers for general use of ethylene (PS), polymer derivant, acrylic polymer, acid imide polymer, the virtue with phenolic group
Ether polymer, acylamide polymer, fluorine-based polymer, paraxylene Type of Collective object, vinyl alcohol polymer or they
Mixture etc., selectively, planarization layer 110 can by the compound stacked body setting of inorganic insulation layer and organic insulator or
It is formed.
After planarization layer 110 is formed, it can be respectively formed in the bending region 10 of viewing area and non-bending region 20
First OLED cell 210 and the second OLED cell 310, to respectively constitute PMOLED 200 and AMOLED 300.In the present embodiment,
The anode and cathode of first OLED cell 210 and the second OLED cell 310 are by same film-forming process and same patterning process
It is formed, and organic luminous layer therein can also be formed by identical mask process, utilize the deposition position of organic luminous layer
Difference, the first OLED cell 210 and the second OLED cell 310 can be the Organic Light Emitting Diodes for having different luminescent colors
(OLED)。
Specifically, the first OLED cell 210 may include setting gradually on 110 surface of planarization layer in bending region 10 successively
Or formed the first anode 211, the first organic luminous layer 212 and the first cathode 213, and the second OLED cell 310 may include according to
Secondary second plate 311, the second organic luminous layer for setting gradually or being formed on 110 surface of planarization layer in non-bending region 20
312 and second cathode 313, wherein, second plate 311 is by being set to the contact hole and thin film transistor (TFT) of planarization layer 110
Drain electrode 108b is electrically connected.
The first anode 211 and second plate 311 can be formed by same patterning process, 211 and second sun of the first anode
Pole 311 may include metal or transparent conductive oxide (such as ITO, i.e. indium tin oxide), in the present embodiment, display base plate 100
Substrate 101 can be directed towards to the bottom emitting type of 100 outside light extraction of display base plate.In bottom emitting type shows equipment, the first sun
Pole 211 and second plate 311 include transparent material or are formed by transparent material.In another embodiment, display base plate 100 can
To be the top emission type along the light-emitting directions separate with substrate 101, in top emission type shows equipment, the first anode 211 and the
Two anodes 311 are formed by opaque material, it may include the non-transparent material of such as metal.
In the present embodiment, the first anode 211 of the PMOLED 200 of the same a line in bending region 10 being set to is electric mutually
Connection, and the first cathode 213 of the PMOLED 200 of same row is electrically connected to each other, in another embodiment, bending region 10
PMOLED 200 can set or be formed as the first anode 211 to be electrically connected to each other, and corresponding first cathode 213 is electric exhausted
Edge；It is non-bending region 20, the second plate 311 of multiple AMOLED 300 can set or be formed as electrical isolation and it is multiple
The second cathode 313 of AMOLED 300 is electrically connected.
The first confining layers 120 (pillar) that bending region 10 may include setting or be formed in after the first anode 211, the
Between one confining layers 120 set or be formed in multiple first OLED cells 210, the first confining layers 120 can utilize its side wall to limit
The region that the range of deposition of first organic luminous layer 212, i.e. the first confining layers 120 accommodate (or encirclement) by it defines the
The luminous zone of one OLED cell 210.First confining layers 120 may include folding on the surface for the substrate 101 for being provided with the first anode 211
Add one or more layers, in the present embodiment, the first confining layers 120, which are included in, is provided with the bending region of the first anode 211 successively
Setting or the first restriction unit 121 formed and isolation pole unit 122.First confining layers 120 may include absorbing at least part
Material, light reflecting material or the light-scattering material of light, can also include that (such as wavelength is in the range of 380~750nm to visible ray
Light) be that translucent or opaque material or the first confining layers 120 may include such as silica, silicon nitride, nitrogen oxidation
Silicon, aluminium oxide, titanium oxide, tantalum oxide or the inorganic oxide of zinc oxide or the inorganic insulating material of inorganic nitride, may be used also
Including the opaque material such as black-matrix material.But the present invention is not limited to this.In certain embodiments, the first confining layers
120 also include being translucent or opaque material to visible ray, the light sent out to avoid the first different OLED cells 210
Line interacts.
The second confining layers 130 (pillar) that non-bending region 20 may include setting or be formed in after second plate 311,
Between second confining layers 130 set or be formed in multiple second OLED cells 310, the second confining layers 130 can utilize its side wall to limit
The range of deposition of fixed second organic luminous layer 312, i.e. the second confining layers 130 accommodate the region of (or encirclement) by it and define
The luminous zone of second OLED cell 310.In the present embodiment, the second confining layers 130, which are included in, is provided with the non-curved of second plate 311
The the second restriction unit 131 and third that folding area domain 20 sets gradually or formed limit unit 132.In the present embodiment, the 2nd OLED
Second cathode 313 of unit 310 can be electrically connected to each other, as the common electrode of multiple AMOLED 300, AMOLED drivers
By controlling the control circuit 320 of the common electrode and corresponding A MOLED 300 so as to shining to each AMOLED 300
It is controlled.
In the present embodiment, the first restriction unit 121 can set or be formed as the substrate that covering is provided with the first anode 211
101 trapezoid structure, the second restriction unit 131 and third, which limit unit 132, can set or be formed as covering to be provided with second
The trapezoid structure of the substrate 101 of anode 311 and, first limit unit 121, second limit unit 131 and third limit it is single
Member 132 may include identical material, and the first restriction unit 121 and second limits unit 131 and can pass through same figure chemical industry
Skill is formed.
Since the first OLED cell 210 belongs to PMOLED 200, shone by the addressing of PMOLED drivers and control, in order to
Convenient for multiple PMOLED 200 can independent control, in the present embodiment, the first anode 211 of multiple first OLED cells 210 is electrically connected
It connects, it is therefore, terraced to fall in the isolation pole unit 122 that the first surface of the restriction unit 121 far from substrate 101 is superposed or is formed
Shape structure, so that 211 corresponding first cathode 213 of the first anode being electrically connected to each other is electrically insulated.
First organic luminous layer 212 can set or be formed in the open area that the first confining layers 120 are limited, and first
Organic luminous layer 212 covers the first anode 211 for being set to the open area that the first confining layers 120 are limited.In addition, second has
Machine luminescent layer 312 can set or be formed in the open area that the second confining layers 130 are limited, and the second organic luminous layer 312
Covering is set to the second plate 311 for the open area that the second confining layers 130 are limited.Positioned at multiple the of different display units
One organic luminous layer 212 and the second organic luminous layer 312 can include identical or different material, such as multiple first organic
Luminescent layer 212 and multiple second organic luminous layers 312 can include material of main part (host) and dopant material (dopant).And
And before or after the first organic luminous layer 212 and the second organic luminous layer 312 deposition, can also be on the substrate 101
Viewing area deposits other organic function layers, to optimize the luminescent properties of the first OLED cell 210 and the second OLED cell 310.The
Method and structure well known in the art can be used in one organic luminous layer 212, the second organic luminous layer 312 and other organic function layers
It is formed, and the structures and methods of optimized emission performance can be selected as needed, such as the first organic luminous layer 212, second
Organic luminous layer 312 may also comprise quantum well structure.
It is organic that first cathode 213 and the second cathode 313 can set or be formed in respectively the first organic luminous layer 212 and second
The top of luminescent layer 312, the first cathode 213 and the second cathode 313 may include such as aluminium (Al), magnesium (Mg), calcium (Ca) elemental gold
Belong to or metal alloy, the first cathode 213 and the second cathode 313 can utilize same mask process (such as open mask) heavy
Product, for bending region 10, the first cathode 213 between different first OLED cells 210 is isolated pole unit 122 and disconnects, and has
It is shone respectively by control conducive to the first different OLED cells 210.In certain embodiments, the first cathode 213 and the second cathode
313 may also comprise the electron injecting layer (such as lithium fluoride, LiF) of setting thickness.
After the first cathode 213 and the second cathode 313 is formed, it can continue to set or formed encapsulated layer on its surface,
The viewing area for setting or being formed with PMOLED 200 and AMOLED 300 can be protected using encapsulated layer, reduce extraneous steam
With oxygen to the adverse effect of PMOLED 200 and AMOLED 300.In preferred embodiment, encapsulated layer is thin-film encapsulation layer, specifically
Can including organic film, either the laminated construction of inorganic film or organic film and inorganic film, the thickness of encapsulated layer are excellent
It is selected between 200nm~20 μm, can be adjusted according to the needs of selected film layer structure and reality.
To sum up described, the bending region 10 of viewing area sets or forms PMOLED 200 on the substrate 101, including
Set or be formed in first OLED cell 210 on 110 surface of planarization layer, also, the non-bent area of viewing area on the substrate 101
Domain 20 sets or forms AMOLED 300, the second OLED cell including setting or being formed in 110 surface of planarization layer
310.Wherein, the first OLED cell 210 is included in the first anode 211 that 110 surface of planarization layer sets gradually or formed, organic
212 and first cathode 213 of luminescent layer, the second OLED cell 310 are included in that 110 surface of planarization layer sets gradually or formed
Two anodes 311,312 and second cathode 313 of organic luminous layer.The PMOLED drivers electricity of PMOLED 200 and power source drive unit
Connection, and AMOLED 300 is electrically connected with the AMOLED drivers of power source drive unit, so as to PMOLED 200 and AMOLED
300 power source drive unit with display base plate 100 is connect.
The above-mentioned description to display base plate 100 is can refer to, the making side of the display base plate 100 of the present embodiment is described below
Method.The production method of the display base plate 100 of the present embodiment includes：
At least one PMOLED 200 is made on the substrate 101 in bending region 10, the substrate 101 in non-bending region 20
It is upper to make at least one AMOLED 300, and make the electricity of the PMOLED 200 and the AMOLED300 with display base plate 100
Source driving unit connection.
Fig. 3 is that the embodiment of the present invention makes PMOLED 200 in bending region 10 and makes AMOLED in non-bending region 20
300 flow diagram.As shown in figure 3, PMOLED 200 is made in bending region 10 and is made in non-bending region 20
AMOLED 300 may include following steps：
S1：Thin film transistor (TFT) is formed on the substrate 101 in non-bending region 20, thin film transistor (TFT) includes active layer 104, grid
Electrode 106, source electrode 108a and drain electrode 108b, and bending region 10 substrate 101 on formed barrier metal layer 106' and
Source and drain metal level 108', gate electrode 106 and barrier metal layer 106' are formed using same film-forming process, source electrode 108a, drain electrode
108b and Source and drain metal level 108' is formed using same film-forming process；
S2：Planarization layer 110 is formed, planarization layer 110 covers source electrode 108a, drain electrode 108b and Source and drain metal level
108'；And
S3：The first OLED cell 210 is formed on 110 surface of planarization layer in bending region 10 and in non-bending region
20 110 surface of planarization layer forms the second OLED cell 310, and causes the second OLED cell 310 and drain electrode 108b electricity
Connection.
In the present embodiment, before active layer 104 is made, one layer of buffer layer 102 can be first made on 101 surface of substrate,
101 surface of substrate in the non-bending region 20 of 102 coverings of buffer layer, bending region 10 can not form buffer layer 102, this is because
Inorganic material (if having) in buffer layer 102 is easily broken off when being bent, although being influenced on the PMOLED 200 for bending region 10
Less, but generated crack growth can influence the reliability of display base plate 100；Gate insulator is made in non-bending region 20
Layer 105 so that active layer 104 insulate with gate electrode 106, and gate electrode 106 and source electrode 108a, drain electrode 108b it
Between make interlayer insulating film 107 so that gate electrode 106 and source electrode 108a, drain electrode 108b insulation, in preferred embodiment, are bending
Region 20 also makes organic insulator 109, and organic insulator 109 can make barrier metal layer 106' and Source and drain metal level 108' insulate,
Wherein, organic insulator 109 includes organic material, and organic insulator 109 can increase the bending resistance of display base plate 100.
In step S3, the first OLED cell 210 and the 2nd OLED are made respectively in bending region 10 and non-bending region 20
Unit 310 may include following steps：
The first anode 211 is made on 110 surface of planarization layer in bending region 10, to form multiple first OLED cells
210 anode, and second plate 311 is made on 110 surface of planarization layer in non-bending region 20, to form multiple second
The anode of OLED cell 310,211 and second artistic skills 311 of the first anode can be formed using same film-forming process, also, be made
Before the first anode 211 and second plate 311, contact hole can be formed in the planarization layer 110 in non-bending region 20 so that the
Two anodes 311 are electrically connected with the drain electrode 108b of thin film transistor (TFT)；
The first confining layers 120 are made, and be formed with second plate in the bending region 10 for being formed with the first anode 211
311 non-bending region 10 makes the second confining layers 130, and the first confining layers 120 and the second confining layers 130 are respectively used to restriction the
One OLED cell 210 and the second OLED cell 310 go out optical range；First confining layers 120 may include the be sequentially overlapped first limit
Order member 121 and isolation pole unit 122, the second confining layers 130 may include the be sequentially overlapped second restriction unit 131 and third limit
Order member 132, wherein, first, which limits unit 121, second, limits unit 131 and third restriction unit 132 perpendicular to substrate 101
Section for trapezoid, and it is inverted trapezoidal that pole unit 122, which is isolated, perpendicular to the section of substrate 101.In an other embodiment, the
Two confining layers 130 also can only include second and limit unit 131.
First organic luminous layer 212 is made, and non-curved by the region that the first confining layers 120 limit in bending region 10
Folding area domain 20 makes the second organic luminous layer 312 by the region that the second confining layers 130 limit, wherein, the first organic luminous layer 212
211 surface of the first anode is formed in, the second organic luminous layer 312 is formed in 311 surface of second plate；And
The first cathode 213 is made, and in 312 surface system of the second organic luminous layer on 212 surface of the first organic luminous layer
Make the second cathode 313.
Above-mentioned first organic luminous layer 212, the second organic luminous layer 312, the first cathode 213 and the second cathode 313 can be with
It is made using vacuum thermal evaporation technique.The first OLED cell 210 for being formed by above-mentioned steps and the second OLED cell 310
Layers of material and structure can profit with method known in this field, and can subsequently be formed with multiple first OLED cells 210
With make encapsulated layer on the substrate 101 of multiple second OLED cells 310, the structure and forming method of encapsulated layer can also utilize this
Structures and methods well known to field, repeat no more herein.
After the first OLED cell 210 and the second OLED cell 310 is formed, that is, form and bend region positioned at viewing area
The 10 PMOLED 200 and AMOLED 300 positioned at the non-bending region 20 in viewing area, wherein, AMOLED 300 is included in lining
According to the above method, at least one PMOLED 200 can be formed in bending region 10 for the thin film transistor (TFT) formed on bottom 101, with
And at least one AMOLED 300 is formed in non-bending region 20, so as to obtain the described display base plate 100 of the present embodiment.
The present embodiment further includes a kind of display device, and including above-mentioned display base plate 100, which is, for example, flexible aobvious
Show device, curved displays, flexible panel, bent display screen or the electronic equipment for including bending display screen, display base plate
100 include the viewing area of the display device, which includes bending region 10, include in bending region 10 at least one
PMOLED 200 (i.e. the Organic Light Emitting Diode of passive drive), PMOLED 200 are included on the substrate 101 in bending region 10
First OLED cell 210 of setting, PMOLED 200 are electrically connected with the power source drive unit of display base plate 100.So as to, due to
The display performance of PMOLED 200 is not controlled by thin film transistor (TFT), and electrical variation is generated due to being bent in thin film transistor (TFT)
When (such as variation of switching characteristic), bend the display performance of the PMOLED 200 in region 10 is not influenced by thin film transistor (TFT),
So as to be conducive to bend the stabilization of 100 display performance of display base plate in region 10, it can improve and show dress under bending operating mode
The display life put.
It is understood that above example is only unrestricted to describe technical scheme of the present invention, for any ripe
For knowing those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the skill of the disclosure above
Art content makes technical solution of the present invention possible changes and modifications or is revised as the equivalent embodiment of equivalent variations.Therefore,
Every content without departing from technical solution of the present invention, technical spirit according to the present invention are made to the above embodiment any simple
Modification, equivalent variations and modification, in the range of still falling within technical solution of the present invention protection.
Claims (10)
1. a kind of display base plate, including substrate, the viewing area being set on the substrate and outside the viewing area
Power source drive unit, the viewing area include bending region, which is characterized in that the bending region includes at least one
PMOLED, the PMOLED are included in the first OLED cell set on the substrate in the bending region, the PMOLED and institute
State power source drive unit electrical connection.
2. display base plate as described in claim 1, which is characterized in that include between the substrate and first OLED cell
Organic insulator, the organic insulator include organic material.
3. display base plate as described in claim 1, which is characterized in that the viewing area further includes non-bending region, described non-
It bends region and includes at least one AMOLED, the AMOLED is included in second set on the substrate in the non-bending region
OLED cell, includes thin film transistor (TFT) between the substrate and second OLED cell, the AMOLED drives with the power supply
Moving cell is electrically connected.
4. display base plate as claimed in claim 3, which is characterized in that the thin film transistor (TFT) is included in the non-bent area
The active layer that is set on substrate, gate electrode, source electrode and drain electrode, the drain electrode are electrically connected with second OLED cell.
5. display base plate as claimed in claim 4, which is characterized in that the substrate of the bent area and first OLED cell
Between include barrier metal layer and Source and drain metal level, the barrier metal layer formed with the gate electrode using same film-forming process, institute
Source and drain metal level is stated to be formed using same film-forming process with the source electrode and/or the drain electrode.
6. display base plate as claimed in claim 5, which is characterized in that include between the substrate and first OLED cell
Organic insulator, the organic insulator are set between the barrier metal layer and the Source and drain metal level.
7. a kind of display device, which is characterized in that including such as claim 1 to 6 any one of them display base plate.
It is 8. a kind of such as the production method of display base plate according to any one of claims 1 to 6, which is characterized in that including：
At least one PMOLED is made on the substrate in the bending region, the PMOLED is included in the lining in the bending region
The first OLED cell formed on bottom, and connect the power source drive unit of the PMOLED and display base plate.
9. the production method of display base plate as claimed in claim 8, which is characterized in that the viewing area further includes non-bent area
Domain, the production method also include making at least one AMOLED, and make described on the substrate in the non-bending region
AMOLED is connect with the power source drive unit.
10. the production method of display base plate as claimed in claim 9, which is characterized in that on the substrate in the bending region
It makes PMOLED and makes AMOLED on the substrate in the non-bending region and include the following steps：
Thin film transistor (TFT) is formed on the substrate in the non-bending region, the thin film transistor (TFT) includes active layer, gate electrode, source
Electrode and drain electrode, and barrier metal layer and Source and drain metal level are formed on the substrate in the bending region, the gate electrode with
The barrier metal layer is formed using same film-forming process, and the source electrode and the drain electrode utilize together with the Source and drain metal level
One film-forming process is formed；
Planarization layer is formed, the planarization layer covers the source electrode, the drain electrode and the Source and drain metal level；And
First OLED cell is formed on the planarization layer surface in the bending region and in the flat of the non-bending region
Smoothization layer surface forms the second OLED cell, and second OLED cell is electrically connected with the drain electrode.
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| CN111900187A (en) * | 2020-07-13 | 2020-11-06 | 淄博职业学院 | Artwork display screen and manufacturing method thereof |
| CN112259592A (en) * | 2020-10-22 | 2021-01-22 | 京东方科技集团股份有限公司 | Flexible substrate, display screen and display device |
| CN112614439A (en) * | 2020-12-22 | 2021-04-06 | 业成科技（成都）有限公司 | Display device |
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