TW561316B - Positive-type photoresist composition for far violet rays exposure - Google Patents

Positive-type photoresist composition for far violet rays exposure Download PDF

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Publication number
TW561316B
TW561316B TW089122075A TW89122075A TW561316B TW 561316 B TW561316 B TW 561316B TW 089122075 A TW089122075 A TW 089122075A TW 89122075 A TW89122075 A TW 89122075A TW 561316 B TW561316 B TW 561316B
Authority
TW
Taiwan
Prior art keywords
group
acid
general formula
cns
ministry
Prior art date
Application number
TW089122075A
Other languages
English (en)
Chinese (zh)
Inventor
Kenichiro Sato
Yutaka Adegawa
Toshiaki Aoai
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW561316B publication Critical patent/TW561316B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D498/04—Ortho-condensed systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW089122075A 1999-10-20 2000-10-20 Positive-type photoresist composition for far violet rays exposure TW561316B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29878299A JP3955419B2 (ja) 1999-10-20 1999-10-20 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (1)

Publication Number Publication Date
TW561316B true TW561316B (en) 2003-11-11

Family

ID=17864159

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089122075A TW561316B (en) 1999-10-20 2000-10-20 Positive-type photoresist composition for far violet rays exposure

Country Status (3)

Country Link
JP (1) JP3955419B2 (ja)
KR (1) KR100760252B1 (ja)
TW (1) TW561316B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3912767B2 (ja) * 2001-06-21 2007-05-09 富士フイルム株式会社 ポジ型感光性組成物
KR100481667B1 (ko) * 2001-08-07 2005-04-08 주식회사 이엔에프테크놀로지 안료분산 포토레지스트용 현상액
KR100732300B1 (ko) * 2005-06-02 2007-06-25 주식회사 하이닉스반도체 이머젼 리소그래피용 포토레지스트 중합체 및 이를함유하는 포토레지스트 조성물
KR100733230B1 (ko) * 2005-06-02 2007-06-27 주식회사 하이닉스반도체 이머젼 리소그래피용 광산발생제 및 이를 함유하는포토레지스트 조성물
US7534548B2 (en) 2005-06-02 2009-05-19 Hynix Semiconductor Inc. Polymer for immersion lithography and photoresist composition
JP6100986B2 (ja) * 2006-10-30 2017-03-22 三菱レイヨン株式会社 重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
JP2000338672A (ja) * 1999-05-25 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物

Also Published As

Publication number Publication date
KR100760252B1 (ko) 2007-09-19
JP3955419B2 (ja) 2007-08-08
KR20010040136A (ko) 2001-05-15
JP2001117234A (ja) 2001-04-27

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MM4A Annulment or lapse of patent due to non-payment of fees