TW557493B - Cleaning machine with dual-nozzle inert-gas spurting tube - Google Patents

Abstract

A kind of cleaning machine with dual-nozzle inert-gas spurting tube is provided in the present invention. The spurting tube includes at least small-diameter nozzle and large-diameter nozzle. The small-diameter nozzle is used for spurting concentrated inert gas to blow out the contamination particles in the wafer circuit pattern openings to the upper surface of wafer. The large-diameter nozzle is used for spurting diffused inert gas so as to follow the concentrated inert gas to blow the contamination particles on the upper surface of wafer outside the wafer.

Description

557493 V. Description of the invention (1) Field of the invention: The present invention relates to a machine for cleaning wafers, particularly a cleaning machine with a double nozzle nozzle for completely removing contaminated particles on the surface of a wafer. Background of the Invention: In the ultra large integrated circuit (ULSI) process, wafer cleaning technology and cleanliness are one of the most important factors affecting the quality of the device and its reliability, especially When the process technology is advanced to the sub-micron area of 0.15 mm or less, the component density reaches tens of millions to one billion or more, and the manufacturing process exceeds hundreds of steps. Therefore, in the process, a very clean wafer surface is usually required to make such a sophisticated and complex product. In view of this, 'how to clean wafers to achieve the need for ultra-cleanliness' is one of the most important and rigorous steps in the current ULSI semiconductor factory process. 〇The purpose of wafer cleaning is mainly to remove contamination on the wafer surface. ), Such as particles (particies), organic compounds (organic compunds), and metal ions (metal ion). For example, when the thickness of the gate oxide layer is less than 丨 00 angstroms, in the fabrication process, it is necessary to carefully consider the micro-roUghness of the wafer surface and the native oxide layer (native 〇xide ) In order to meet the semiconductor device's requirements for the electrical parameters and characteristics of the ultra-thin gate oxide layer, thereby improving the quality and reliability of the device. Generally speaking, a wafer is entering a furnace for expansion.

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Scattered or oxidized _ & two w need to go through the chemical two deposition or after the etching process' this wafer to remove contaminants: = ti and high-purity deionized water washing strips, to say, only make the round Afterwards, a dehumidification and drying process is performed. That is, semiconductor electronics L cattle: ί: ί to very high cleanliness, the electrical characteristics of the produced / required (the main source of eleCtriCal dyes, Λ / if the pollutants are removed, and these pollutants and Rong cry ΐ: Environment, machine equipment ", gas, chemicals, the first picture-a variety of pollution sources to electricity" This picture reveals the machine 10. When it is located in the turn, by the acid tube (medium motion outside the movement, also The liquid is transferred to the outside of the wafer by the circular motion after using this loading procedure. Please refer to the cleaning tank 12 in the photo resist impurity stage 10 (shown in the figure) and grab it. The circular pendulum that extends to the top of the cleaning tank 1 and 2 indicated by the arrow in the figure above is named ST-2 50. The acidic solution is removed to remove lithographic engraved or ion-implanted debris. 5 0 acid solution A removable photoresist wafer is transferred to the chuck (undistributed groove 1 3 side wall opening 1 5 arm) 16 except that it will do the chemical in the model solution if it will be sprayed from the pipe diameter Composition, the optical centrifugal force attached to the upper surface of the wafer will be doped After the photoresist is applied, the wafer is subjected to a high-purity deionized water (de-ion water) cleaning procedure. The method is the same as described above, and the high-purity deionized water sprayed from the deionized water pipe 8 is used. To further clean the rotating wafer, and remove the ST-25 0 solution remaining after the foregoing pickling step. After completing these two steps, use the nitrogen blown from the nitrogen tube 20 to blow.

Page 5 557493 V. Description of the invention (3) Dry wafer 'blows out the contaminated particles located on the opening of the wafer circuit pattern. However, it is worth noting that the nitrogen tube 20 does not perform a circular oscillating motion as described above, but first moves to the center area of the wafer, and then ejects nitrogen from the diameter of the tube, and simultaneously goes to the periphery of the wafer. mobile. Such an operation mechanism coupled with the rotation motion of the wafer itself can not only spin-dry the liquid in the previous steps and blow dry the wafer, but also blow the photoresist debris remaining in the opening of the circuit pattern onto the wafer. The surface is then purged out of the wafer. Please refer to the third figure, because the nitrogen sprayed from the nitrogen tube 20 is moved from the center of the wafer 14 to the periphery of the wafer 14 (that is, from the left to the right of the nitrogen tube 20 in the figure) (as shown by the diagonal arrow), Therefore, the photoresist debris on the right side of the nitrogen tube 20 can be effectively removed. However, such a result causes the photoresist debris on the left side of the wafer 4 to remain on the upper surface of the wafer 14. Therefore, how to effectively remove these residual photoresist debris to greatly improve the process yield, it becomes One of the important topics in the half-body industry. SUMMARY OF THE INVENTION The present invention aims to provide a cleaning machine tube which can be located on the upper surface of a wafer. This machine includes cleaning and the second invention with a double nozzle. A machine for cleaning wafers is provided. A groove, a distribution groove, a first nozzle, a second nozzle,

Page 6 557493 V. Description of the invention (4) Three nozzles. This opening is used to make the crystal solution to remove particles] to clean the wafer liquid. The third spray blunt gas blows the gas dry, and the upper surface of the gas is blown into the crystal in a trailing manner, and is removed in the circle of the distribution groove. First-surface, tube, wafer. Outside the wafer, the large diameter and the small diameter. The distribution tank is extended outside, cleaning process, wafer table, and the nozzle is removed. There is a small one, the circuit diagram, the nozzle is a nozzle, and the side wall has an opening so that the nozzle is located above the cleaning tank via ′. Cleaning tank, sequence, and the first nozzle is used to spray polymer particles on the acid surface (ρ 〇 1 ymer is used to spray high-purity deionized water, the remaining diameter of the chemical solution tube in the semiconductor process nozzle and large The nozzle with a small diameter is used to eject the contaminated particles in the opening of the concentrated blunt case to the wafer to spray the diffused blunt on the upper surface of the wafer to contaminate the dirt on the upper surface of the wafer; Detailed description of the double elimination in this book, please describe. Please explain the details of the three nozzles in the side wall of the package, package, and tool: The invention provides a machine for cleaning wafers, with blunt nozzles and nozzles to promote wafers. The upper surface is stained to improve the process yield. For details of the present invention, refer to the fourth figure. This figure shows the cleaning machine 40 including the cleaning tank 50, the distribution tank 52, and the first nozzle with a small-diameter nozzle 58 and a large-diameter nozzle. The 60th distribution tank 52 is connected to the side wall of the cleaning tank 50, and has an opening 62 'so that the first spray state can extend outward from the distribution tank 52 through the opening 62. The movement of the dye particles on the cleaning machine is described in detail below. Each component, second nozzle 56 Three nozzles, and on the distribution tank 5 2 two nozzles 5 6 and the first to the cleaning tank 50 0

Page 7 557493 V. Description of Invention (5) Fang. The first nozzle 5 4 ′ is used to eject an acidic solution of the type called S T-2 50 to remove polymer particles located on the surface of the wafer by using chemical components contained in the solution. When the wafer is transferred to the cleaning tank 50 in the machine table 40 and picked up by a gripper (c h u c k) (not shown in the figure) located therein, the wafer is rotated. At the same time, the first nozzle 54 above the cleaning tank will perform a circular swing motion as shown by the arrow in the figure (that is, the nozzle of the first nozzle 54 will swing back and forth between the center and the edge of the wafer), and The ST-2 50 acidic solution is sprayed from the nozzle to remove the polymer particles attached to the surface of the wafer during the semiconductor process by using the chemical components contained therein. After that, the S T _ 2 50 acidic solution containing polymer particles is thrown out of the wafer by the centrifugal force of the wafer rotating motion. Then still refer to the fourth figure. The second nozzle shown in the figure is used to spray high-purity deionized water to dilute the ST-25 acid solution remaining on the wafer, and further clean the wafer surface and remove the pollution generated in the semiconductor process. Thing. The method is the same as described above. It uses a deionized water pipe to swing back and forth between the center and the edge of the wafer, and cleans the rotating wafer with the high-purity deionized water sprayed from it, and then rotates the wafer. The centrifugal force of the motion throws the residual τ-2 50 bath solution and the high-purity deionized water used in this procedure to the outside of the wafer. The third nozzle 'is used to blow out the inert gas to dry the wafer. Among them, the third nozzle has dual nozzles, which are a small-diameter nozzle 5 8 and a large-diameter nozzle 60, and the inert gas emitted is nitrogen. The small-diameter mouthpiece 58 is used to spray a concentrated (f oc c s e d) blunt gas to open the circuit pattern on the upper surface of the wafer.

557493 V. Contamination particles in the description of the invention (6) are blown out to the upper surface of the wafer. However, it is worth noting that this third nozzle does not perform a circular swing motion as described above, but first moves its nozzle to the center area of the rotating wafer, and then simultaneously sprays blunt gas and moves toward the edge of the wafer. And blow out the contaminated particles in the circuit pattern opening on the upper surface of the wafer to the upper surface of the wafer, and then blow it out of the wafer. In other words, in addition to rotating the wafer itself, this procedure can throw the liquid used in the previous steps to the wafer. It can also dry the wafer with blunt gas and leave it on the top surface of the wafer or The contamination particles in the pattern are blown to the upper surface of the wafer, and then blown out of the wafer. The large-diameter nozzle 60 is used to spray spread blunt gas on the upper surface of the wafer, and to concentrate the blunt gas sprayed from the small-diameter nozzle 58 to blow the contaminated particles remaining on the upper surface of the wafer. Scan out of the wafer. Among them, the aforementioned small-diameter and large-diameter systems are parallel and parallel to each other, and the range of the blunt gas ejected from the large-diameter nozzle 60 on the upper surface of the wafer is greater than the bluntness ejected by the small-diameter nozzle 58.气 范围。 Gas range. In a preferred embodiment, the diameter of the small-diameter nozzle 58 is 1 to 2 mm, and the diameter of the large-diameter nozzle 60 is 4 to 5 mm, and the small-diameter and large-diameter are welded together. Ways are connected side by side. It is worth noting that, because the large-diameter nozzle 60 is juxtaposed with the small-diameter nozzle 5 8, its operation mode is the same as the small-diameter nozzle 5 8, that is, it will first move to rotate with the small-diameter nozzle 58. The central area of the wafer is then sprayed with a diffusion inert gas on the wafer to more completely remove the contaminated particles remaining on the upper surface of the wafer. In other words, as shown in the fifth figure, the diffuse inert gas discharged from the large-diameter nozzle 60 can follow the concentrated inert gas discharged from the small-diameter nozzle 5 8 and will still remain on the upper surface of the wafer 64. The contaminated particles are more effectively removed from the wafer.

Page 9 557493 V. Description of the invention (7) In addition to the effective removal of ST-2 50 acidic solution, the method of the present invention can be greatly improved because the contaminated particles on the upper surface of the wafer are completely removed. Yield of semiconductor process to increase production capacity. Although the present invention is explained as above with a preferred example, it is not intended to limit the spirit and the inventive substance of the present invention, but only to this embodiment. Therefore, all modifications made without departing from the spirit and scope of the present invention should be included in the scope of patent application described below.

Page 557493 Brief description of the diagrams The above description and the many advantages of this invention can be easily understood through the following detailed description combined with the attached drawings, where: The first diagram reveals the effects of various pollution sources on electronic components; The second picture is a schematic diagram of the cleaning machine of the conventional technology, showing the connection relationship between the various components in the machine; the third picture is the schematic diagram of the nitrogen tube of the conventional technology, showing the nitrogen tube moving from the center of the wafer to the edge; The fourth figure is a schematic diagram of the cleaning machine of the present invention, showing the connection relationship between the various components in the machine; and the fifth figure is a schematic diagram of the blunt gas nozzle of the present invention, showing situation. Drawing number comparison table: Cleaning tank 1 2 Wafer 1 4 Acid tube 1 6 Nitrogen tube 20 Cleaning tank 50 First nozzle 54 Small-diameter nozzle 5 8 Opening 62 Removing photoresist impurity machine 1 0 Distribution tank 1 3 Opening 1 5 Deionized water pipe 1 8 Cleaning machine 4 0 Distribution tank 5 2 Second nozzle 56 Large diameter nozzle 6 0 Wafer 6 4

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Claims (1)

557493 VI. Application Patent Scope 1. A dual nozzle blunt gas nozzle for a wafer cleaning machine, including at least: a small-diameter nozzle, which is used to spray concentrated blunt gas and contaminate the contamination in the wafer circuit pattern opening. Particles are blown out onto the upper surface of the wafer; and a large-diameter nozzle is used to spray diffused inert gas on the upper surface of the wafer to follow the concentrated inert gas to blow the contaminated particles on the upper surface of the wafer. Scan out of the wafer. 2. The dual-nozzle blunt gas nozzle as described in item 1 of the scope of patent application, wherein the large-diameter caliber is 4 to 5 mm. 3. The dual-nozzle blunt gas nozzle as described in item 1 of the scope of patent application, wherein the diameter of the small pipe is 1 to 2 mm. 4. The dual-nozzle inert gas nozzle according to item 1 of the patent application scope, wherein the inert gas is nitrogen. 5. — Double-nozzle inert gas nozzles for wafer cleaning machines, including at least: small-diameter nozzles, which are used to emit concentrated inert gas and blow out contaminated particles in the wafer circuit pattern openings to the crystal. A round upper surface; and a large-diameter nozzle, wherein the large-diameter nozzle and the small-diameter nozzle are parallel to each other and pass through each other, and the range of the blunt gas emitted from the large-diameter nozzle on the upper surface of the wafer is larger than the small-tube diameter The concentrated inert gas sprayed from the radial nozzle is used to follow the concentrated inert gas to sweep the contaminated particles located on the upper surface of the wafer to the outside of the wafer. Page 12 557493 6. Scope of patent application 6. The double-nozzle blunt gas nozzle as described in item 5 of the scope of patent application, wherein the small pipe diameter is 1 ~ 2 mm. 7. The dual-nozzle blunt gas nozzle as described in item 5 of the patent application scope, wherein the large-diameter caliber is 4 to 5 mm. 8. The dual-nozzle inert gas nozzle as described in item 5 of the patent application scope, wherein the inert gas is nitrogen. 9. A machine for cleaning wafers, comprising at least: a cleaning tank for performing cleaning procedures on the wafer; a distribution tank having an opening on a side wall thereof, so that a nozzle passes from the distribution tank to the opening through the opening; The outer nozzle includes at least: a first nozzle for spraying an acid solution to remove polymer particles on the upper surface of the wafer by using a chemical component contained in the acid solution; a second nozzle The tube is used for spraying high-purity deionized water to clean the wafer, and at the same time the acid solution remaining on the upper surface of the wafer in the semiconductor manufacturing process is flushed away; the third nozzle is provided with double nozzles to Injecting a blunt gas to dry the wafer includes at least: a small-diameter nozzle for discharging concentrated blunt gas and blowing out contaminated particles located in the wafer circuit pattern opening to the upper surface of the wafer; and Page 13