TW556330B - Resin-molded package with cavity structure - Google Patents

Resin-molded package with cavity structure Download PDF

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Publication number
TW556330B
TW556330B TW91109650A TW91109650A TW556330B TW 556330 B TW556330 B TW 556330B TW 91109650 A TW91109650 A TW 91109650A TW 91109650 A TW91109650 A TW 91109650A TW 556330 B TW556330 B TW 556330B
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TW
Taiwan
Prior art keywords
substrate
cover
joint surface
resin
cavity structure
Prior art date
Application number
TW91109650A
Other languages
Chinese (zh)
Inventor
Hiroyuki Shoji
Original Assignee
Nec Compound Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP2001137611A external-priority patent/JP2002334944A/en
Application filed by Nec Compound Semiconductor filed Critical Nec Compound Semiconductor
Application granted granted Critical
Publication of TW556330B publication Critical patent/TW556330B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A package includes: a substrate having a ridged peripheral portion and a center portion defined by and lower in level than the ridged peripheral portion. A semiconductor chip is mounted on the center portion. A plurality of lead is electrically coupled to the semiconductor chip and penetrates the substrate outwardly from the center portion. The package also includes a cap defining a cavity space which accommodates the semiconductor chip. The cap has a cap bonding face bonded with a substrate bonding face of the ridged peripheral portion. The cap bonding face and the substrate bonding face are higher in level than the center portion.

Description

556330 五、發明說明(1) 【發明背景— 1、發明領域 本發明有關一種樹脂模劁私壯 種樹脂模製封裝,:具有:裝,更明確地說…^ 低。 體凌置日守,其引線電感降 2、相關技術說明 已知具有空穴結構的陶瓷封合 電常數與寄生電容之故,1 %a降低+導體裴置之介 3亥陶竞封裝的缺點係其成本高而以ρ 裝置。 另一方面,由於具有空穴結構的樹脂模製封# & 低而且便s,其相當具有吸引 ==敦成本較 樹脂基板,其上安裝一半導體製封裝包括- 脂蓋與一半導體曰L = ?曰曰;’以及-樹脂蓋,該樹 干导體日日片共同界定一空穴,如此該 可以=該空穴空間·。該樹脂蓋黏附於該樹脂基:。 失為if超南頻半導體裝x,降低其電感以抑制高頻損 好:由此該電ί,,儘可能使其引線長度愈短愈 好由,點來看,以無引線型空穴結構封裝為佳。 “二ii利第2600689號與曰本專利第31 27584號揭示該 構封裝。該無引線型空穴結構封裝包括-二曰2二了*裝於該樹脂基板上的半導體晶#、數條引 Ϊ亦鱼基板上面貫穿至下面水平,而且經由金屬 線亦,、料導體晶片耦纟,以及一蓋,其黏附於該樹脂基556330 V. Description of the invention (1) [Background of the invention-1. Field of the invention The present invention relates to a resin mold package, a resin mold package, which has: packaging, more specifically ... ^ low. The body ’s resistance is reduced, and its lead inductance is reduced. 2. Related technical descriptions. Knowing the ceramic sealing electrical constant and parasitic capacitance of the cavity structure, 1% a reduction + conductor Pei Zhizhishen 3 disadvantages of the ceramic package Because of its high cost, it is installed with ρ. On the other hand, because the resin mold package with a cavity structure is low and convenient, it is quite attractive == less cost than a resin substrate, and a semiconductor package mounted thereon includes a grease cap and a semiconductor. =? 曰 曰; 'And-resin cover, the trunk conductor sun and the sun sheet together define a cavity, so you can = the cavity space ·. The resin cover is adhered to the resin base :. If it is an ultra-southern frequency semiconductor device x, reduce its inductance to suppress high-frequency losses. Therefore, the electricity should be as short as possible as long as possible. From the point of view, the leadless hole structure Packaging is better. "Ei Li No. 2600689 and Japanese Patent No. 31 27584 disclose the structured package. The leadless type cavity structure package includes-two or two * semiconductor crystals mounted on the resin substrate, and several leads. The upper surface of the substrate is penetrated to the lower level, and the metal substrate is coupled through the metal wire, and a cover is adhered to the resin base.

第5頁 556330 五、發明說明(2) 一 = =導;;U 有該無引線型空穴 封^,其中該長引線係自封裝側面向外突出,而且^聖 、十波外侧向下彎曲。 而且八在該 揭示於前述兩個日本專利中 封裝具有下列共同缺點。 &上述無引線型空穴結構 首先,上述封裝係經由一焊接法 = 該電路板的導電圖案之丄SI . 以!二亥封裝放置於-裝滿焊劑的焊錫容器中ΐ行 :能會進入該空穴内。若該樹 二 外4合勿進入该空穴内。甚辞 進-步與該半導體曰…:劑進入該空穴’並且 導體展置的電特徵與性能減弱。 千 ':須=劑進入該空穴…預防或 »亥二八,令邊樹脂基板之平坦且水平 板的底部水平極A右呻山IU 士 丁上衣面水十同於该基 平上袅面盥ΐ為有 確使該樹脂基板的平坦且水 劑上表面有充分高度。此意指該樹脂基板 上表面貫穿樹脂基板需要較長引線,以便自基板 # m a icP &表面或底部水平。該長引線電感大,使 付難不當的超高頻半導體裝置高頻損失。 人。為ί吝1亥樹脂基板的平坦且水平上表面係與該蓋接 a ^ 供该半導體晶片與接合線用之充分空穴空 間須具有足夠高度。其導致該封裝的總厚度或長 第6頁 556330 五、發明說明(3) 度很大。 第三,該使用自會ϊ知壯边 、 該樹脂基板的平坦且水平2表=2 2遠蓋與該樹脂基板。 脂基板不對準。該封裝尺 θ =成位移或該蓋與該樹 米,厚度約0 · 5微米。此種 》如’其直徑約2微 形狀缺陷。該封裝的缺、不^'準會使該封裝外部 路。 之具谷易與金屬線斷 在上述狀況下,愛亚旅a . 穴結構之新穎封裝。而要^展一種沒有上述問題的具有空 【發明概述】 穴結ξϊ新is】目的係提供-種沒有上述問題的具有空 之新ί ϊ ΐ另外目的係提供一種電感降低的具有空穴結構 新賴封裝。另外目的係提供總高度降低的具有空穴結構之 裝,t ί:目的係提供一種具有空穴結構之新穎封 共避免焊劑進入該空穴。 裝,ί ί:f f目的係提供一種具有空穴結構之新穎封 ί盍與基板之間具有自動對準特性。 周圍部種封裝,包括:-基板,其具有-隆起 界定,2 /、中央部分,該令央部分係由該隆起周圍部分 ’且其水平低於該隆起周圍部分。將一半導體晶片 556330 五、發明說明(4) 安裝在該中央部分上。數條引線與該半導體晶片電耦合, 並自該中央部分向外貫穿該基板。該封裝亦包括一蓋,其 界定容納該半導體晶片的空穴空間。該蓋具有蓋接合面, 其係與該隆起周圍部分的基板接合面接合。該蓋接合面與 基板接合面的水平高於該中央部分。 安裝有該半導體晶片之中央部分的上表面水平低於該 隆起周圍部分上面。此結構特性可以有利地避免焊劑進入 ,穴的不良現象。換句話說,該隆起周圍部分係作為環繞 安裝有半導體晶片之中央部分的焊劑障壁,其中該焊劑障 壁有助於避免該焊劑進入空穴。其不會造成該封裝 裝置的電特徵與性能減弱。 述結構特性 央部分的上 向外貫穿該 會降低其電 半導體裝置 述結構特性 穴空間下, 的總高度。 外,該蓋的 接合面與該 產生自動對 準功能使得 需要任何過 上 此該中 央部分 度變小 制南頻 上 充分空 該封裝 此 該蓋的 面,以 自動對 法,不 亦能有效地減少該中央部分的厚度,如 下表面之間距離縮短’因而使得自該中 基板的引線長度減至最小。此等引&長 感。此等引線的電感降低使得更容易抑 的不良高頻損失。 :以進-步在確保容納料導體晶片的 有效降低該蓋高度。如此可以有效縮減 板的接合面彼此喷合,而且 基板的接合面各者均包括至少一 準该蓋與該基板的自動對 ^ 可以使用自動組裝機器進種 高之人工精確度。上述J仃自動組裝方 556330 五 、發明說明(5) 屬^ 形狀無缺陷。該封 \、線不會產生任何不良的斷路 大量製造,並改善最終產物的產率。 一。~ ^ 由下列說明將可明白本發明上述與其他目的、特性及 ΪΆ:形狀無缺陷。該封裝的無缺陷外部形狀使該金 以大量;ί生任何不ί的斷路。上述自動對準功能亦能用 里I造,並改善最終產物的產率- 由下列扣Da…一 α人丄w "" · · 優點 【較佳貫施例之詳細說明】 一基板,其 分係由該隆 平低於該隆 表面的半導 ,而且此等 一蓋,其界 接合面,其 該蓋接合面 水平低於該 地避免焊劑 分係作為焊 上表面,其 不會造成該 本發明第一實施樣態係一種封裝,包括·· ^有一隆起周圍部分與一中央部分,該中央部 已周圍部分界定,而且該中央部分的上表面水 圍部分的上面;一安裝在該中央部分之上 數i ϋ丄數條引線’其與該半導體晶片電耦合 〜二線自該中央部分向外貫穿該基板;以及 ^,納該半導體晶片的空穴空間,該蓋具有蓋 =其、,隆起周圍部分的基板接合面接合,而且 一基,接合面的水平高於該中央部分。 隆起片?中央部分上表面之 不當地表此結構特性可以有利 中匕|;被繞安裝有半導體晶片的中央部分 封穿丰/ 免烊劑進入該空穴。如此 Πϊϊ的電特徵與性能減弱。 厚度,如此 而使得自中 減少中央;分::工::有效縮減中央部分的 表面與下表面間的距離,因 第9頁 556330 五、發明說明(6) 央部分向外貫穿 縮減會降低其電 高頻半導體裝置 上述結構特 分空穴空間下, 封裝的總高度。 此外,該蓋 且該蓋的接合面 平面,以產生自 種自動對準功能 方法’不需要任 使該封裝外部形 金屬線不會產生 用以大量製造, 較佳情況係 包括一環形延伸 準該蓋與該結構 準,則該蓋的接 疋该向内向下傾 此使該蓋的接合 自動對準功能使 法,不需要任何 該封裝外部形狀 屬線不會產生任 :基板”線長度減至最小。引線的長度 之 此專引線的電感降低得以更容易抑制 的不良高頻損失。 ^另外得以在確保容納該半導體晶片的充 有效降低該蓋高度。如此可以有效縮減該 的接合面與 與該基板的 動對準該蓋 使得可以使 何過高之人 狀無缺陷。 任何不良的 並改善最終 ,該蓋的接 之向内向下 的自動對準 合面與該基 斜平面會導 面與該基板 得可以使用 過高之人工 無缺陷。該 何不良的斷 該基板 接合面 與該基 用自動 工精確 該封裝 斷路。 產物的 合面與 傾斜平 功能。 板的接 引該蓋 的接合 自動組 精確度 封裝的 路。上 的接合面 各者均包 板的自動 組裝機器 度。上述 的無缺陷 上述自動 產率。 該基板的 面。此結 若該蓋與 合面不會 與該基板 面變得彼 裝機器進 。上述自 無缺陷外 述自動對 彼此p齒合,而 括至少一非水 對準功能。此 進行自動組裝 自動對準功能 外部形狀使該 對準功能亦能 接合面 構提供 該基板 彼此响 精確對 此喃合 行自動 動對準 部形狀 準功能 各者均 自動對 不對 合,但 準,因 。此種 組裝方 功能使 使該金 亦能用Page 5 556330 V. Description of the invention (2) One = = lead; U has the leadless hole seal ^, wherein the long lead is protruding outward from the side of the package, and the outer side of the sacred and ten waves is bent downward . Also, the package in this disclosure in the aforementioned two Japanese patents has the following common disadvantages. & The above-mentioned leadless cavity structure First, the above package is via a soldering method = 丄 SI of the conductive pattern of the circuit board. The Erhai package is placed in a solder container full of flux: it can enter the cavity. Do not enter the cavity if the tree is outside and outside. In a word, step-by-step with the semiconductor ...: the agent enters the hole 'and the electrical characteristics and performance of the conductor are weakened. Thousands': must = agent enter the cavity ... prevent or »Hil 28, make the side of the resin substrate flat and the bottom of the horizontal plate level A right Yanshan IU Shiding shirt surface water is the same as the base flat surface The toilet was made sure that the resin substrate was flat and the liquid medicine had a sufficient height on the upper surface. This means that the upper surface of the resin substrate needs a longer lead through the resin substrate so as to be level from the surface or bottom of the substrate #m a icP &. This long lead has a large inductance, which causes high-frequency losses in an unsuitable UHF semiconductor device. people. In order to connect the flat and horizontal upper surface of the resin substrate to the cover, a sufficient cavity space for the semiconductor wafer and the bonding wire must have a sufficient height. This results in the total thickness or length of the package. Page 6 556330 V. Description of the invention (3) The degree is large. Third, the user will know the strong edges, the flatness and horizontality of the resin substrate, and the surface and the resin substrate. The grease substrate is misaligned. The package rule θ = into displacement or the cover and the tree, the thickness is about 0.5 micrometers. Such a shape defect such as' its diameter is about 2 micrometers. The lack of this package will not make the package external. The Guyi and the metal wire are broken. Under the above conditions, Aia Lua's novel packaging of the cavity structure. Instead, it is necessary to develop a new type with voids that does not have the above-mentioned problem. [Summary of the Invention] The aim is to provide a new type with voids that does not have the above problems. Lai package. In addition, the purpose is to provide a device having a cavity structure with a reduced total height. The purpose is to provide a novel seal having a cavity structure to prevent flux from entering the cavity. The purpose is to provide a novel seal with a cavity structure and an automatic alignment feature between the substrate and the substrate. The peripheral package includes:-a substrate having a ridge definition, 2 /, a central portion, the order portion is formed by the perimeter portion of the ridge and its level is lower than the perimeter portion of the ridge. A semiconductor wafer 556330 V. Description of the invention (4) is mounted on the central portion. A plurality of leads are electrically coupled to the semiconductor wafer and pass through the substrate outwardly from the central portion. The package also includes a cover that defines a cavity space that houses the semiconductor wafer. The cover has a cover bonding surface which is bonded to a substrate bonding surface of a portion around the bulge. The cover bonding surface and the substrate bonding surface are higher in level than the central portion. The upper surface of the central portion on which the semiconductor wafer is mounted is lower than the upper portion of the peripheral portion of the bump. This structural characteristic can advantageously avoid the undesirable phenomenon of flux entering and cavitation. In other words, the raised perimeter portion serves as a solder barrier surrounding the central portion on which the semiconductor wafer is mounted, wherein the solder barrier helps prevent the flux from entering the cavity. It does not cause the electrical characteristics and performance of the package to be degraded. Said structural characteristics The penetration of the central part upwards and outwards will reduce its electrical semiconductor device. Said structural characteristics The total height under the cavity space. In addition, the joint surface of the cover and the automatic alignment function make it necessary to fully empty the surface of the package that covers the cover at a frequency that is smaller than the central part to reduce the frequency. Reducing the thickness of the central portion shortens the distance between the surfaces as follows, thus minimizing the length of the leads from the middle substrate. These quotes & long sense. The reduced inductance of these leads makes it easier to suppress poor high frequency losses. : To further reduce the height of the cover by ensuring that the material conductor wafer is contained effectively. In this way, the bonding surfaces of the boards can be effectively sprayed together, and each of the bonding surfaces of the substrate includes at least an automatic alignment of the cover and the substrate. ^ An automatic assembly machine can be used to implant a high degree of manual precision. The above-mentioned J 仃 automatic assembly side 556330 V. Description of the invention (5) The shape is not defective. The sealing line and wire will not produce any bad disconnection. It will be manufactured in large quantities and improve the yield of the final product. One. ~ ^ The above and other objects, characteristics, and features of the present invention will be understood from the following description: The shape is not defective. The package's defect-free external shape allows the gold to generate a large amount of open circuit. The above-mentioned automatic alignment function can also be made using the I, and improve the yield of the final product-from the following button Da ... -α person 丄 w " " · Advantages [detailed description of preferred embodiments] a substrate, Its system consists of the semi-conductor which is lower than the surface of the ridge, and the cover joint surface of the cover is lower than the surface of the cover. This avoids the flux branch as the welding upper surface, which will not cause the A first embodiment of the present invention is a package comprising: a bulged peripheral portion and a central portion, the central portion has been delimited by the surrounding portion, and the upper surface of the central portion is above the water surrounding portion; The upper part is connected to the semiconductor wafer through a plurality of leads, which are electrically coupled to the semiconductor wafer, and the second wire runs through the substrate outward from the central portion; and 纳, to hold the cavity space of the semiconductor wafer, the cover has a cover = its, The substrate joint surface around the bulge is joined, and the level of the joint surface is higher than the central portion. Raised piece? Improper expression of the structural characteristics on the upper surface of the central part can be beneficial. The central part is mounted around the central part on which the semiconductor wafer is mounted. In this way, the electrical characteristics and performance of Πϊϊ are weakened. Thickness, so that the center is reduced from the center; points :: work :: effectively reduce the distance between the surface of the central part and the lower surface, because page 9 556330 V. Description of the invention (6) The reduction of the central part will reduce the The above structure of the electric high-frequency semiconductor device specifically divides the total height of the package under the cavity space. In addition, the cover and the plane of the joint surface of the cover to generate a self-aligning function method 'do not require any external metal wires of the package to be produced for mass manufacturing, and preferably includes a ring-shaped extension. The cover is in line with the structure, then the connection of the cover should be tilted inwardly so that the automatic alignment function of the cover's joints does not need any external shape of the package. The line does not produce any: substrate "line length is reduced to Minimal. The length of the lead reduces the inductance of the dedicated lead, making it easier to suppress bad high-frequency losses. ^ In addition, it can effectively reduce the height of the cover while ensuring that the semiconductor wafer is fully charged. This can effectively reduce the bonding surface and the The dynamic alignment of the base plate makes the high-shaped human shape defect-free. Any defect and improvement in the end, the automatic alignment of the cover inward and downward and the base oblique plane will guide the surface and the The substrate must be able to use too high artificial defect-free. What is wrong to break the substrate joint surface and the substrate using an automatic method to precisely open the package. The joint surface of the product and Oblique flat function. The board is connected to the cover. The automatic assembly of the cover is accurately packaged. Each of the joints on the board is covered by the automatic assembly machine. The above-mentioned defect-free automatic yield. The surface of the substrate. As a result, the cover and the mating surface will not be mounted on the same machine as the substrate surface. The above-mentioned self-defective externally automatically aligns with each other, and includes at least a non-water alignment function. This performs automatic assembly and automatic alignment The external shape of the function enables the alignment function to also join the surface structure to provide the substrates with each other accurately. The shape of the automatic alignment section can be adjusted automatically. Each of the quasi-functions is automatically misaligned, but it is accurate. This kind of assembly side function Make the money available

第10頁 556330 五、發明說明(7) 以大2造該::ϊ最終產物的產率。 高度。如4三内向下傾斜平面在焊劑障壁外側提供最大 二合面=焊劑很難到達介於該蓋的接合面與該基板 基板的接合面此避免該焊劑經由該蓋的接合面與該 ="面間的界面進入該空穴内。 包括ί ϊ 1ί :ΐ況係,該蓋的接合面與該基板的接合面各者 平面與水平且平坦表面的組合。此結 該基板不對準::J=j 5之:動對準功能。若該蓋與 此嚙合,作是"f的接合面與該基板的接合面不會彼 確對準ml 下傾斜平面會導引該蓋與該基板精 。此m的接合面與該基板的接合面變得彼此 ti組m對:功能使得可以使用自動組裝機器進行 # m ^ / 不需要任何過咼之人工精確度。上述自動 裳外部形狀無缺陷。該封裝的無缺陷外部 功能亦能用以大量製造,並改善最終產物的4動對皁 均包nr兄係,該蓋的接合面與該基板的接合面各者 之向外向下傾斜平面。此結構提供自ΐ 準,;ϋ:!的自動對準功能。若該蓋與該基板不對 是兮*與該基板的接合面不會彼此嚙合,但 此ϋ -卜下傾斜平面會導引該蓋與該基板精確對準,因 自與該基板的接合面變得彼此喃合。此Ξ 法,不需要任何過高之人工精確度。上述自動^功= 556330Page 10 556330 V. Description of the invention (7) Make the big 2 :: ϊ Yield of final product. height. For example, the downwardly inclined plane within the three-three plane provides the largest junction surface on the outside of the solder barrier. It is difficult for the solder to reach the bonding surface between the cover's joint surface and the substrate. This prevents the flux from passing through the cover's joint surface and the = " The interface between the faces enters the cavity. Including ί ϊ 1 ΐ: It is a combination of a plane and a horizontal and flat surface each of the joint surface of the cover and the joint surface of the substrate. At this point, the substrate is misaligned :: J = j 5 of 5: dynamic alignment function. If the cover engages with this, the joint surface of " f and the joint surface of the substrate will not be aligned exactly with each other. The inclined plane will guide the lid and the substrate. The bonding surface of this m and the bonding surface of the substrate become each other. Ti Group m pair: The function enables the use of an automatic assembly machine for # m ^ / without any excessive manual precision. The outer shape of the above automatic skirt is flawless. The non-defective external function of the package can also be used for mass production, and to improve the final product's four-action soap package nr sibling, the joint surface of the cover and the joint surface of the substrate are inclined downward and outward. This structure provides auto-calibration; ϋ:! 'S auto-alignment function. If the cover and the substrate are not correct, the joint surface with the substrate will not mesh with each other, but this ϋ-tilted inclined plane will guide the cover to accurately align with the substrate, because the joint surface with the substrate changes. Have to murmur each other. This method does not require any artificial accuracy that is too high. The above automatic work = 556330

形狀無缺陷。該封裝的無缺陷外部形狀使該金 生任何不良的斷路。上述自動對準功能亦能用 以大置製造,並改善最終產物的產率。 此 向外向 斜平面 下傾斜 下傾斜 管現象 合面間 使得該 此確保 外,該 下傾斜 之内圍 平面之 平面在 之故, 的界面 部分焊 該焊劑 基板的向 平面之内 具有一内 内圍,以 焊劑障壁 焊劑一部 ’該基板 劑很難沿 不會進入 外向下傾斜平面之内圍位於該蓋之 圍内側,如此該基板的向外向下傾 部延伸區,其另外自該蓋的向外向 向内且向上方向延伸。此等向外向 内部處提供最大高度。假設因毛細 分通過介於該基板接合面與該蓋接 的向外向下傾斜平面之内部延伸區 著内部延伸區以向内方向爬升。如 空穴内。 一亦較佳情況係,該蓋之接合面與該基板之接合面的第 括至少一裱形延伸之凸面,而其第二者包括一環形 I並且與該凸面嚙合之凹面。具有嚙合凸面與凹面的此 甚、Γ 1提供自動對準該蓋與該基板的自動對準功能。若該 合=該基板不對準,則該蓋的接合面與該基板的接合面不 二1f嚙合,但是該嚙合凸面與凹面的組合會導引該蓋盥 精確對準,目此使該蓋的接合面與該基板的接合面 應ί 嚙合。此種自動對準功能使得可以使用自動組裝 上4行自動組裝方法,不需要任何過高之人工精確度。 2動對準功能使該封裝外部形狀無缺陷。該封裝的無 白部形狀使該金屬線不會產生任何不良的斷路。上述 、準功能亦能用以大量製造,並改善最終產物的產Defect-free shape. The defect-free external shape of the package causes the metal to make any undesirable disconnections. The above-mentioned automatic alignment function can also be used for large-scale manufacturing and improve the yield of the final product. The outwardly inclined plane is inclined downward and the downwardly inclined tube phenomenon makes it necessary to ensure that the outer surface of the downwardly inclined inner plane is there, and the interface part is welded to the inner surface of the solder substrate with an inner inner plane. The solder barrier is a part of the flux. The substrate is difficult to be located on the inside of the cover along the inner circumference that will not enter the outer downward inclined plane. Therefore, the outward downward downward extension of the substrate extends from the direction of the cover. Extend outwards and inwards. These provide the maximum height outwards. It is assumed that the capillary extends through the internal extension of the outwardly-downward inclined plane between the substrate joint surface and the cover, and climbs inward due to the capillary. Such as inside the cavity. A further preferred case is that the joining surface of the cover and the joining surface of the substrate include at least one convexly extending convex surface, and the second one includes a circular I-shaped concave surface that is engaged with the convex surface. With the engagement of convex and concave surfaces, Γ 1 provides an automatic alignment function for automatically aligning the cover and the substrate. If the combination = the substrate is misaligned, the joint surface of the cover is engaged with the joint surface of the substrate, but the combination of the convex and concave surfaces will guide the lid to accurately align, so that the lid ’s The joint surface should engage with the joint surface of the substrate. This auto-alignment function makes it possible to use the auto-assembly four-row auto-assembly method without any need for excessive manual precision. The 2-motion alignment function makes the external shape of the package defect-free. The white-free shape of the package prevents the metal wires from causing any undesirable disconnection. The above-mentioned quasi-functions can also be used for mass production and improve the production of the final product.

556330556330

率。 此外,假設因毛細管現 於該基板接合面與該蓋接合 面的組合有助於截獲該部分 空穴内。特佳情況係,該蓋 接合面包括該凹面,而且該 接合面,如此該凹面尺寸大 使得容易將該部分焊劑截獲 不會進入該空穴内。 例如,該凸面可能包括 凹面包括一壞形延伸並且與 此實例中,該蓋的接合面可 的接合面可能包括該圓形凹 包括該圓形凹槽,而該基板 起。 象之故,該焊劑一部分通過介 面間的界面,該嚙合凸面與凹 焊劑。如此避免該焊劑進入該 的接合面包括凸面,而該基板 基,的接合面寬度大於該蓋的 於該凸面。此一額外結構特性 在邊凹面内。如此確保該焊劑 一環形延伸之圓形隆起,而該 =圓形隆起嚙合之圓形凹槽。 能包括該圓形隆起,而該基板 槽。或者,該蓋的接合面可能 的接合面可能包括該圓形隆rate. In addition, it is assumed that the combination of the capillary tube existing on the substrate joint surface and the lid joint surface helps to intercept the part of the cavity. It is particularly preferable that the joint surface of the cover includes the concave surface, and the joint surface has such a large size that it is easy to intercept the part of the flux and not enter the cavity. For example, the convex surface may include a concave surface including a bad shape extension, and in this example, the engaging surface of the cover may include the circular depression including the circular groove, and the substrate. For some reason, part of the flux passes through the interface between the interfaces, the meshing convex surface and the concave flux. This prevents the solder from entering the joint surface including the convex surface, and the width of the joint surface of the substrate base is larger than the convex surface of the cover. This additional structural feature is within the concave side. This ensures that the flux has a circular ridge extending in a ring shape, and the = circular ridge engaging the circular groove. Can include the circular hump and the substrate groove. Or, the joint surface of the cover may include the circular bulge

例如,該凸面可能包括 凹面包括一产取 來肜延伸之錐形隆起, 此實例中,缽說仏 雖t隆起喃合之錐形凹;Η μ盒的接合面可能包括贫雜For example, the convex surface may include a concave surface including a conical ridge that extends from 肜. In this example, 钵 said that although t bulges and conical depressions; 的 μ box junctions may include impurities

的接合面可能白扛斗从w η振亥錐形隆起,而該J 包括該錐形四搞 .^ . ™盖的接合面3 該錐形隆起可u ϋ w j ^ y面了此包括錐形隆走 能選擇性包括1形凹槽。 隆起而该錐形凹槽 具有該喷合 與该基板的自動 自動對準該蓋 不對準,則該 隆起與凹槽組合的結構提供 對準功能。若該蓋與該基板The joint surface may be a white carrying bucket with a conical bulge from w η Zhenhai, and the J includes the conical ridge. ^. The joint surface of the ™ cover 3 The conical bulge may be u ϋ wj ^ y and this includes a cone The bulge can optionally include a 1-shaped groove. The structure of the combination of the ridge and the groove provides an alignment function when the tapered groove has a misalignment between the spraying and the substrate automatically aligning the cover. If the cover and the substrate

556330 五、發明說明(ίο) 蓋接合面與該基板接合面不會彼此4合,但 與凹槽組合也會引導該蓋與該基板精確對準,因而 接合面與該基板接合面彼此喃合。此種自動 ,二, 可以使用自動組裝機器進行自動組裝方法,不需:::: 高之人工精確度。上述自動f+、、Ι τ·/τ & ^ $ μ & 可k 勒對準功能使该封裝外部形妝Α 缺陷。該封裝的無缺陷外部形狀使該金屬線二 不良的斷路。上述自動對準功能亦能用以大量ίί:: 善最終產物的產率》 里’並改 此外:假設-部分焊劑因毛細管現象之 板接合面與該蓋接合面間的界面,該响合隆起與凹=有亥^ 於截獲該部分焊劑。如此;j I ^ 〜’保該焊劑不會進入該凹槽肉。 特佳情況係,該蓋接合面包衽兮略把 扛兮ηπ播括忒隆起而该基板接合面包 括该凹槽,而且該基板接合面寬度大於該蓋接合面, 該凹槽的尺寸大於該隆起。tf_ s k 士 獲該凹槽内的谭劑部分。此】: = ; =使得容易截 此現象避免该焊劑進入該空穴。 此外,該錐形隆起或者可以選擇性包括-梯形隆起, =錐:凹槽可選擇性包括-梯形凹槽。該梯形隆凹 槽的組合使得容易在該梯形隆起與 ^ 一部分塗覆黏合劑。 I刀田甲至/ 較佳情況係,這幾你2丨& & 士 A W、 伸至該基板底部周s。:上表面傾斜延 步縮短自中央部分二卜伸亦有助於進- 卜貝穿0亥基板的此等引線長度。此等 引線長度進一步縮短進一牛 一牛隊^ # π $ + θ 步降低其電感。此等引線電感進 步降低使付更谷易抑制高頻半導體裝置的高頻損失。556330 V. Description of the Invention (ίο) The cover joint surface and the substrate joint surface will not merge with each other, but the combination with the groove will also guide the cover and the substrate to be accurately aligned, so the joint surface and the substrate joint surface are fused with each other . This kind of automatic, two, can use the automatic assembly machine for automatic assembly method, without the need for ::: high manual accuracy. The above-mentioned automatic f +, I τ · / τ & ^ $ μ & Klein alignment function makes the package shape A defective. The non-defective external shape of the package causes the metal wire 2 to be disconnected poorly. The above-mentioned automatic alignment function can also be used for a large number of ί :: Good yield of the final product "and change: In addition-suppose-the interface between the solder joint surface of the plate and the lid joint surface due to capillary phenomenon, the ringing hump With concave = there is 亥 in intercepting the part of the flux. In this way, j I ^ ~ 'guarantee that the flux will not enter the grooved meat. In a particularly preferred case, the cover engaging bread is slightly raised and the substrate joining surface includes the groove, and the width of the substrate joining surface is greater than the cover engaging surface, and the size of the groove is larger than the protrusion. . tf_ s k get the tanner part in the groove. This]: =; = makes it easy to intercept this phenomenon to prevent the flux from entering the cavity. In addition, the tapered ridge may optionally include a trapezoidal ridge, = cone: the groove may optionally include a trapezoidal groove. The combination of the trapezoidal ridges and recesses makes it easy to apply an adhesive to the trapezoidal ridges and a portion. I knife field A to / better case, these two you &A; taxi A W, extended to the bottom periphery of the substrate s. : The obliquely extending upper surface shortens the length of the lead from the central part to the length of the lead. These lead lengths are further shortened by one cow and one cow ^ # π $ + θ to reduce their inductance. These lead inductances are further reduced, making it easier for Fanggugu to suppress high-frequency losses in high-frequency semiconductor devices.

ΙΗ 第14頁 556330 五、發明說明(11) 較佳情況係,該蓋包括一平坦主體與一周, , = 蓋接合面。此結構特性在確保容納:亥;導: 空間下’進一步降低該蓋高度。如此可以 進一步縮減該封裝的總高度。 本舍明的第二實施樣態係一種封裝,包括·一 , 其具有周圍部分以及由該周圍部分所界定 =反而 且該中空部分的上表面水平低於該周圍部分了^部分丰^ ΐίί:該中空部分上表面;數物,其與該 丰導體曰曰片電輕合,而且此等引線貫穿該基板 部分上表面傾斜延伸至該基板底部周圍;以及一 了 = 2:該半導體晶片的空穴空間,該蓋包括一平坦主;斑 二該周園部分具有蓋接合面,該蓋接:面與基 板接&面摻合,而且該蓋接合面與該基板接合 面’該蓋接合面與該基板接合面彼:嚙 接"面與該基板接合面各包括至少-非水平 安裝有該半導體晶片的中处 周圍部分的頂冑。此社構刀之上表面水平低於該 空穴。換句話說,助於避免焊劑不當進入該 片之中空部分的焊齊=部:::為環繞安裝有半導體晶 進入該空穴。如此不合4二,、中该焊劑障壁可以避免焊劑 能減弱。 9 ^"成該封裝半導體裝置電特徵與性 上述結構特性亦有利 此縮減該中央部分上下&另双减夕中央部为的厚度,如 下面之間的距離,因而使得自中央部ΙΗ Page 14 556330 V. Description of the Invention (11) Preferably, the cover includes a flat body and one circle, and == the joint surface of the cover. This structural characteristic is to ensure that the height of the cover is further reduced under the condition of accommodating: Hai; guide: space. This can further reduce the overall height of the package. The second embodiment of the present invention is a kind of package, including one, which has a surrounding portion and is defined by the surrounding portion = and the upper surface level of the hollow portion is lower than that of the surrounding portion. ^ 部分 丰 ^ ΐί: The upper surface of the hollow portion; a number of objects that are electrically connected to the abundance of the conductor; and these leads extend obliquely through the upper surface of the substrate portion and extend around the bottom of the substrate; and a = 2: empty of the semiconductor wafer In the cavity space, the cover includes a flat main body; and the second part of the peripheral circle has a cover joint surface, the cover connection: the surface and the substrate interface are mixed, and the cover interface and the substrate interface The bonding surface with the substrate: the engaging surface and the bonding surface of the substrate each include at least a non-horizontal mounting portion of the semiconductor wafer with a central periphery. The upper surface level of this social knife is lower than the cavity. In other words, it helps to prevent the solder from entering the hollow part of the chip, which is improperly soldered, so as to surround the cavity with semiconductor crystals. If this is not the case, the flux barrier can prevent the flux from weakening. 9 ^ " Electrical characteristics and properties of the packaged semiconductor device The above structural characteristics are also beneficial. This reduces the thickness of the central portion above and below and reduces the thickness of the central portion, such as the distance between the lower portions, so that the distance from the central portion

第15頁 556330 五、發明說明(12) 分向外貫穿該基板的引線長度縮減至最小。此等引線 度變小會降低其電感。此等引線的電感降低使得容易 高頻半導體裝置的不良高頻損失。 1制 上述結構特性可以在確保容納該半導體晶片的充八外 穴空間下,進一步降低該蓋高度。如此可以進一步縮二 封裝的總高度。 $ &Page 15 556330 V. Description of the invention (12) The length of the lead wire that runs outward through the substrate is reduced to a minimum. These smaller leads will reduce their inductance. The reduction in the inductance of these leads makes it easy to suffer high-frequency losses of high-frequency semiconductor devices. The above-mentioned structural characteristics can further reduce the height of the cover while ensuring that the semiconductor wafer is filled with eight holes. This can further reduce the overall height of the package. $ &

此外,該蓋接合面與該基板接合面彼此嚙合,該 合面與該基板接合面各者包括至少一非水平平面, J 自動對準該蓋與該基板的自動對準功能。此種自 = :“吏得可以使用自動組裝機器進行自動組裝方法,不= i壬高之人工精確度。上述自動對準功能使該封裝外ΐ 士任的斷路。上述自動對準功能亦能用以大量$產 乂 ’並改善最終產物的產率。 表 較佳情況係,該蓋接合面盥美 -環形延伸之向内向下傾斜平面:』::=2至少 該蓋與該基板之自動對準功能。若兮供自動對準 」该盍的接合面與該基板的接合面不會 f上 向内向下傾斜平面會導引該叢 曰,但疋该 合面與該基板的接合面變得彼此喃合此】= 不需要任何過高之人工精確度表丁自動組裝方法’ 裝外部形狀無缺陷。該封裝的無缺 ^對準功能使該封 不會產生任何不良的斷路。上自;形狀使該金屬線 乩自動對準功能亦能用以大 556330 五、發明說明(13) 里製造’並改善最終產物的產率。 士外,該向内向下傾斜平面在該焊劑障壁外部處提供 最大高度。如此使該焊劑报難到達該蓋接合面與基板接^ 面間之界面,因而避免焊劑經由該蓋接合面與基板接合二 間之界面進入該空穴。 ,亦較佳情況係,該蓋接合面與該基板接合面各包括产 ϊίΐ!,傾斜平面與水平且平坦表面。此種結構提供自: =準该盍與該基板之自動對準功能。若該蓋與該基板不 ^ 則該蓋的接合面與該基板的接合面不會彼此嚙合,但 是該向=向下傾斜平面會導引該蓋與該基板精確對準,^ 此使該蓋的接合面與該基板的接合面變得彼此嚙合。此 自動對準功能使得可以使用自動組裝機器進 法,不需要任何過高之人工精確度。上述自動 斷路。上述自動對準功能亦能用 以大1製造,並改善最終產物的產率。 亦較佳情況係,該蓋接合面與基板接合面各 ,延伸之向夕卜向下傾斜平面。此種結構提供自動對準嗜^ Κίί之自動對準功能。若該蓋與該基板不對準,“ 盍的接合面與該基板的接合面不會彼此嚙合,但 二 向下傾斜平面會導引該蓋與該基板精確料,因此 的接合面與該基板的接合面變得彼此嚙合。此種 : 功能使得可以使用自動組裝機器進行自不蛩 要任何過高之人工精確度。上述自動對準功=封::In addition, the cover bonding surface and the substrate bonding surface are engaged with each other, and each of the bonding surface and the substrate bonding surface includes at least one non-horizontal plane, and the automatic alignment function of the cover and the substrate is automatically aligned. This kind of self- =: "You can use an automatic assembly machine to perform an automatic assembly method, not the high manual accuracy of i. The above-mentioned automatic alignment function allows the package to be disconnected. The above-mentioned automatic alignment function can also It is used to produce a large amount of product and improve the yield of the final product. The preferred case is that the cover's joint surface is beautiful-a circularly extending inwardly inclined surface: ": == at least the cover and the substrate are automatically Alignment function. If it is for automatic alignment, the joint surface of the 盍 and the substrate will not tilt upwards and downwards. The plane will guide the cluster, but the joint surface of the 面 and the substrate will change. You have to confuse each other] = no need for any excessively high manual precision automatic assembly method of the watch 'the external shape is flawless. The package's flawless alignment function prevents the package from producing any undesired disconnections. The shape is such that the automatic alignment function of the metal wire 乩 can also be used for manufacturing 556330 V. Invention description (13) and improve the yield of the final product. Outside the taxi, the inwardly sloping plane provides the maximum height outside the solder barrier. This makes it difficult for the flux to reach the interface between the cover joint surface and the substrate interface, and thus prevents the flux from entering the cavity through the interface between the cover joint surface and the substrate interface. It is also preferable that the cover joint surface and the substrate joint surface each include a production plane, an inclined plane, and a horizontal and flat surface. This structure is provided by: = The automatic alignment function of the quasi-chirp and the substrate. If the cover and the substrate are not ^, the joint surface of the cover and the joint surface of the substrate will not mesh with each other, but the direction = downward inclined plane will guide the cover to accurately align with the substrate, so that the cover The bonding surface of the substrate and the bonding surface of the substrate become engaged with each other. This automatic alignment function makes it possible to use the automatic assembly machine method without any excessive manual precision. The above is automatically disconnected. The above-mentioned auto-alignment function can also be used to make a large one and improve the yield of the final product. It is also preferable that the cover joint surface and the substrate joint surface each have a plane extending downward and downward. This structure provides an automatic alignment function. If the cover is not aligned with the substrate, the joint surface of the 盍 and the substrate will not engage with each other, but the two inclined planes downward will guide the cover and the substrate accurately, so the joint surface and the substrate's The joint surfaces become intermeshing each other. This type of function makes it possible to use an automatic assembly machine for self-reliance without any excessively high manual accuracy.

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第17頁 556330 五、發明說明(14) =t 2 f缺陷。該封裝的無缺陷外部形狀使該金屬線不會 、土 if : : t的斷路。上述自動對準功能亦能用以大量製 造,並改善最終產物的產率。 於紡^外丄較佳情況係該基板的向外向下傾斜平面内圍位 外:下it二:向下傾斜平面的内圍内側,如此該基板的向 的::=面之内圍具有一内部延伸區,其另外自該蓋 S i 平面之内圍,以向内且向上方向延伸。此 設因毛二I Γ ί平面在:劑障壁内部處提供最大高度。假 與該蓋接:面間ΐ Ϊ面焊::f分通過介於該基板接合面 邻征彳由r从 、1面,5亥基板的向外向下傾斜平面之内 =伸區::該部分焊劑很難沿著内部延伸 爬升。如此確保該焊劑不會進入空穴内。 括至= = 之;蓋接合面與基板接合面之第-者包 面,而且與該凹面喃合。呈有:人:者匕括壞形延伸之凹 與該基板之自動對準功能。若該蓋 彼此嚙合,但是节喃人& 面與該基板的接合面不會 基板精確對準,°因此;該蓋的::的組f會導引該蓋與該 得彼此嚙合。此種自動對M, 〇面與该基板的接合面變 器進行自動組裝方法,$需J = !以使用自動纪裝機 動對準功能亦能用以大量的斷路。上述自 里,並改善最終產物的產率。 556330 五、發明說明(15) 於該= 卜垃;設因毛細管現象之故,該焊劑-部分通過介 面的面與該蓋接合面間的界面,該嗜合凸面斑凹 空穴内:c該部分焊劑。如此避免該焊劑進:該 接合面包括該接合面包括凸面,而該基板 接合面,如“凹二::基板的接合面寬度大於該蓋的 使得容易將# ^、面尺寸大於该凸面。此一額外結構特性 悍劑截獲在該凹面内。如此峰保該焊劑 凹面:能包r環形延伸之圓形隆起,而該 此實例圓形隆起响合之圓形凹槽。 包=圓=括該圓形凹槽。或者,該丄 起。只圓幵/凹槽’而該基板的接合面可能包括該圓形隆月匕 凹面:ΐ丄能包環形延伸之錐形隆起,而該 此實例中,兮‘:且…亥錐形隆起嚙合之錐形凹槽。 的接合面可能包括該錐形凹# mu’而該基板 包括該錐形凹#,而該基板的接接合面可能 能選擇性包括一¥形凹槽。隆起,而该錐形凹槽可 具有該嚙合隆起盥凹樺t 該蓋與該基板的自動對準二供自動對準 則該蓋接合面與該基板接合面不會彼:::基合 556330 五、發明說明(16) 槽組=會引導該蓋與該基板精確對 該盍接δ面與該基板接合面彼此喝合。此種自=== 使得可以使用自動組裝機器進行自動組裝 =人工精確度。上述自動對準功能使該封ϊίΐί 斷路。上述自動對準功能亦能用生 並改善最終產物的產率。 里Ixe 此外,假設一部分焊劑因毛細管現象 板接合面與該蓋接合面間的界面,該嚙人 通j該基 η截獲該部分焊劑。如此確保該焊;4進 =;=,而且該基板接合面寬度大於該蓋; ^截獲該凹槽内的焊劑部分。此現象避免該焊劑進^該空 而該::凹可:選擇性包括-梯形隆起, 槽的组選擇性包括一梯形凹槽。該梯形隆起與凹 一 Α、、 &吏侍各易在該梯形隆起與凹槽平坦部分舍中至少 一"卩分塗覆黏合劑。Page 17 556330 V. Description of the invention (14) = t 2 f defect. The non-defective external shape of the package prevents the metal wire from being broken by if:: t. The automatic alignment function described above can also be used for mass production and improve the yield of the final product. In the case of spinning, the outer edge of the substrate is inclined outwardly and downwardly from the plane. The lower part of it is the inner side of the inner surface of the downwardly inclined plane. The inner extension area is further enclosed from the inner plane of the cover S i to extend inwardly and upwardly. This design provides a maximum height at the inside of the agent barrier. If it is connected to the cover: surface to surface Ϊ surface welding:: f points pass through the adjacent surface of the substrate joint surface, from r, 1 surface, within 5 ° of the substrate's outward downward slope plane = extension area :: the Part of the flux is difficult to climb along the interior extension. This ensures that the flux does not enter the cavity. Enclose it to = =; the first surface of the cover joint surface and the substrate joint surface, and the concave surface. Presented by: human: the dagger extends the recess of the bad shape and the automatic alignment function of the substrate. If the lids are engaged with each other, but the joint surface of the joint and the substrate will not be accurately aligned with the substrate, therefore, the group f of the lid will guide the lid and the mating to each other. This kind of automatic assembly method for the M, 〇 plane and the junction surface of the substrate assembly method, $ J =! To use the automatic alignment machine automatic alignment function can also be used for a large number of open circuits. This improves the yield of the final product. 556330 V. Description of the invention (15) In this = Bu La; because of the capillary phenomenon, the flux-partially passes the interface between the surface of the interface and the joint surface of the cover. Flux. This prevents the flux from entering: the joint surface includes the joint surface including a convex surface, and the substrate joint surface, such as "Concave 2 :: The width of the substrate's joint surface is larger than that of the cover, making it easy to make # ^, face size larger than the convex surface. This An additional structural characteristic of the flux is captured in the concave surface. In this way, the flux concave surface can be protected: a circular ridge extending in a ring shape can be included, and the circular groove in this example is a circular groove. Circular groove. Or, the ridge. Only the cymbal / groove 'and the joint surface of the substrate may include the concave surface of the circular bulge: the cone-shaped ridge extending in a circular shape, and in this example Xi ': And ... the conical grooves of the cone-shaped ridge engagement may include the conical recess #mu' and the substrate includes the conical recess #, and the joint interface of the substrate may be selectively It includes a ¥ -shaped groove. A bulge, and the tapered groove may have the engaging ridge. The cover and the substrate are automatically aligned. Two for automatic alignment. The cover joint surface and the substrate joint surface do not: :: 基 合 556330 5. Description of the invention (16) Slot group = will guide The cover and the substrate accurately match the δ-plane and the substrate-joining surface of each other. This self-=== makes it possible to use an automatic assembly machine for automatic assembly = manual precision. The automatic alignment function described above makes the seal ϊ ΐ ΐ ΐ Open circuit. The above-mentioned automatic alignment function can also be used to improve the yield of the final product. In addition, suppose that a part of the flux is due to the interface between the joint surface of the plate and the joint surface of the cover due to capillary phenomenon. This part of the flux. This ensures the welding; 4 into =; =, and the width of the substrate joint surface is larger than the cover; ^ Intercept the flux part in the groove. This phenomenon prevents the flux from entering ^ the empty and the :: concave can : Selectivity includes-trapezoidal ridges, and the group of grooves optionally includes a trapezoidal groove. The trapezoidal ridges and recesses are at least one in the flat portion of the trapezoidal ridges and grooves. Separately coated with adhesive.

根μ絲將參考圖式詳細說明本發明之第一實施例。圖1係 結槿t發明第一實施例之具有空穴結構的新穎封裝之内部 …橫剖面放大圖。圖2係圖1所示之具有空穴結構的新穎The first embodiment of the present invention will be described in detail with reference to the drawings. Fig. 1 is a cross-sectional enlarged view of the inside of a novel package having a cavity structure according to the first embodiment of the invention. Figure 2 is a novel structure with a cavity structure shown in Figure 1.

556330 五、發明說明(17) 封裝之平面圖 具有空穴結構的封裝1 〇包括一樹脂基板1 6、一半導體 曰曰 ”盒2 0。該樹脂基板1 6更包括一晶粒墊1 2與四條 、且的引線1 4。该樹脂基板1 6包括厚度縮減的中空部分21 ί 。該隆起周圍部分22環繞該厚度縮減之 中=4 7刀21裱形延伸。該厚度縮減的中空部分21之上表面 水平低於該隆起周圍部分2 2頂部。該隆起周圍部 為焊劑的障壁’使焊劑不會進入該厚度縮減之中;』:作 將晶 中。該晶 上表面大 在平面圖 墊12係模 在該 墊12周圍 線14各自 16,至該 出。各引 水平外部 該高 旁。該高 縮減中空 屬線與半 性設置 表面水 導體晶 墊1 2位 結合在 四條引 向外延 中空部 的底部 水平内 在該厚 平與該 片1 8係 於樹脂 該厚度 線14係 伸。在 分21的 周圍, 部部分 粒墊1 2選擇 粒墊1 2的上 致相同。半 中,該晶粒 製而成,並 平面圖中, 的四個方向 該厚度縮減 樹脂基板16 線14包括高 部分。 水平内部部 水平内部部 部分21的上 導體晶片1 8 '人π曰 /用ς wv 丁 厚度縮減中 安裝在該晶 基板1 6的中 縮減中空部 以徑向並分 橫剖面圖中 上表面貫穿 更自該底部 、中間傾斜 空部分21 空部分21的 粒墊1 2上。 央。該晶粒 分21内。 別以該晶粒 ,這四條引 樹脂基板 周圍向外突 部分與低 分位於該厚度縮減中空部分2丨上表面 ^具有—上露出表面3Q,其自該厚度 表面露出。該上露出表面30經由一金 電連接。該低水平外部部分位於該核 556330556330 V. Description of the invention (17) The plan view of the package The package 1 with a cavity structure 10 includes a resin substrate 16 and a semiconductor box “20”. The resin substrate 16 further includes a die pad 12 and four And the leads 1 4. The resin substrate 16 includes a hollow portion 21 with reduced thickness. The raised portion 22 surrounds the reduced thickness = 4 7 knives 21 are frame-shaped extensions. The reduced thickness hollow portion 21 is over The surface level is lower than the top of the perimeter of the ridge 2 2. The perimeter of the ridge is a barrier to the flux 'so that the flux will not enter the thickness reduction; ": the crystal is formed. The upper surface of the crystal is larger than the plan view of the 12-die mold Lines 14 around the pad 12 are 16 to the exit. Each lead is horizontally outside the high side. The high-reduction hollow line and the semi-planar surface water-conductor crystal pad 12 are combined at the bottom of the four leads to the outer hollow portion. The horizontal inner thickness is the same as that of the sheet 18 and the thickness line 14 of the resin. Around the center 21, the grain pads 12 and the grain pads 12 are selected to be the same. Into and in plan view The four directions of the thickness reduction resin substrate 16 and the line 14 include the high portion. The horizontal inner portion of the upper conductor wafer 1 of the horizontal inner portion 21 is mounted on the crystal substrate 16 during the thickness reduction. The middle hollow portion is divided into radial and cross sections, and the upper surface penetrates from the bottom and the middle inclined hollow portion 21 on the grain pad 12 of the hollow portion 21. The central portion. The grains are divided into 21. Do not use the grains The four protruding resin substrates are located on the upper surface of the thickness-reduced hollow portion 2 and the low points are located on the upper surface of the thickness-reduced hollow portion 2. The upper exposed surface 3Q is exposed from the thickness surface. The upper exposed surface 30 is electrically connected via gold. The low-level outer part is located in the core 556330

ϊϊί】 而且位於該高水平内部部分的外侧。 的底部露出。該中間傾斜部分係逐漸向外向下傾斜,= 南水平内部部分與低水平外部部分間提供平順連接。= 線14係模製而成,並結合在樹脂基板16内。ϊϊί] Also located outside the high-level inner portion. The bottom is exposed. The middle sloping part gradually slopes outwards and downwards, providing a smooth connection between the south horizontal inner part and the low horizontal outer part. = The wire 14 is molded and incorporated in the resin substrate 16.

該隆起周圍部分22環繞該厚度縮減之中空部分21 延伸。隆起周圍部分22包括一内壁、與該内壁相對的外壁 和-平坦表面,以及一向内向下傾斜平面。該向内向下傾 斜平面在該内壁與該平坦表面之間接合。該向内向下傾斜 平面在忒内壁外與该平坦表面内延伸。該平坦面係在該向 内向下傾斜平面與該外壁間接合。該平坦表面在該向内向 下傾斜平面外與该外壁内延伸。該向内向下傾斜平面的平 面圖呈圓形帶狀。該向内向下傾斜平面具有均勻傾斜角 度。由幾何觀點來看,該向内向下傾斜平面的立形狀相當 於圓錐形内面一部分,換言之,短截頂圓錐的内面。該向 内向下傾斜平面使基板具有與蓋20接合之接合面28。The raised peripheral portion 22 extends around the thickness-reduced hollow portion 21. The raised peripheral portion 22 includes an inner wall, an outer wall opposite to the inner wall, and a flat surface, and an inwardly and downwardly inclined plane. The inwardly and downwardly inclined plane joins between the inner wall and the flat surface. The inwardly and downwardly inclined plane extends outside the inner wall of the palate and inside the flat surface. The flat surface engages with the outer wall at the inwardly and downwardly inclined plane. The flat surface extends out of the inwardly and downwardly inclined plane and inwardly of the outer wall. The plan view of the inwardly downward inclined plane is a circular band. The inwardly and downwardly inclined plane has a uniform inclination angle. From a geometric point of view, the vertical shape of the inwardly and downwardly sloping plane is equivalent to a part of the inner surface of the cone, in other words, the inner surface of the truncated cone. This inwardly and downwardly sloping plane allows the substrate to have a bonding surface 28 to which the cover 20 is bonded.

將蓋接合或黏附於基板接合面2 8,該基板接合面包括 树知基板16的隆起周圍部分22之向内向下傾斜平面,因而 忒樹月曰基板1 6與該蓋2 0共同界定容納半導體晶片1 8之空穴 24。該空穴亦有助於降低寄生電感。該蓋2〇包括一碟形主 體23與一隆起周圍部分25,其環繞該碟形主體23的周圍環 形延伸。該碟形主體23通常既平且較薄。該隆起周圍部分 25係向下且向該樹脂基板16隆起。 該隆起周圍部分25包括一内壁、一與該内壁相對的外The cover is bonded or adhered to the substrate bonding surface 28, which includes the inwardly and downwardly inclined plane of the raised peripheral portion 22 of the substrate 16; therefore, the tree substrate 16 and the cover 20 jointly define a housing for the semiconductor The cavity 24 of the wafer 18. This hole also helps reduce parasitic inductance. The cover 20 includes a dish-shaped main body 23 and a raised peripheral portion 25 that extend in a ring shape around the periphery of the dish-shaped main body 23. The dish-shaped body 23 is generally both flat and thin. The raised peripheral portion 25 is raised downward and raised toward the resin substrate 16. The raised peripheral portion 25 includes an inner wall and an outer wall opposite to the inner wall.

第22頁 556330 五、發明說明(19) · 壁及一向内向下傾斜面,其先決條件係該蓋2 〇與基板1 6接 -, 合,而且該内壁面朝下。該向内向下傾斜面在内壁與外壁 間接合。該向内向下傾斜面在内壁外且外壁内之間延 伸。由仰視圖來看,該向内向下傾斜面呈圓形帶狀。由幾 何觀點來看,該向内向下傾斜面的立體形狀相當於一圓錐 形外面一部分,換言之,短截頂圓錐的外面。 蓋2 0的向内向下傾斜面提供一蓋接合面2 6,其經調整 且與樹脂基板1 6的基板接合面2 8嚙合。蓋接合面2 6具有均 勻傾斜角度,其與上述基板接合面28的均勻傾斜角度相 同,如此蓋接合面26與基板接合面28緊密接觸並嚙合。如 詳細圖解,該蓋接合面2 6的寬度可以選擇性略窄於基板接 合面28。 該蓋接合面2 6在樹脂基板1 6的隆起周圍部分2 2平坦表 面内部延伸。蓋接合面26的内部内圍在基板接合面28的内 圍外側延伸。介於該蓋接合面2 6與基板接合面2 8間的接合 界面係自树脂基板1 6最上面水平向下延伸。如此有助於縮 減封裝1 0的總高度或厚度。 上述封裝1 0具有下列優點。 該厚度縮減中空部分2 1有助於形成容納半導體晶片丨8 _ 之空穴24 ’同時樹脂基板丨6與蓋2〇的高度或厚度分別縮 減’因此該封裝的總高度或厚度變小。 、,女裝有半導體晶片18的厚度縮減中空部分21之上表面 j平低於該樹脂基板1 6之隆起周圍部分22的最上面。此種 結構特性有利於避免焊劑不當地進入空穴24。換言之,該Page 22 556330 V. Description of the invention (19) · The prerequisites for the wall and an inwardly inclined surface are that the cover 20 is connected to the substrate 16 and the inner wall is facing downward. The inwardly downward sloping surface engages between the inner wall and the outer wall. The inwardly downward sloping surface extends between the inside and outside of the inner wall. Viewed from a bottom view, the inwardly and downwardly inclined surface is in the shape of a circular band. From a geometrical point of view, the three-dimensional shape of the inwardly and downwardly sloping surface is equivalent to a part of the outer surface of a cone, in other words, the outer surface of a truncated cone. The inwardly and downwardly inclined surface of the cover 20 provides a cover engaging surface 26 which is adjusted and engaged with the substrate engaging surface 2 8 of the resin substrate 16. The cover joint surface 26 has a uniform inclination angle, which is the same as the uniform inclination angle of the above-mentioned substrate joint surface 28, so that the cover joint surface 26 and the substrate joint surface 28 are closely contacted and engaged. As illustrated in detail, the width of the cover joint surface 26 can be selectively narrower than that of the substrate joint surface 28. The lid joint surface 26 extends inside the flat surface of the raised peripheral portion 2 2 of the resin substrate 16. The inner periphery of the lid joint surface 26 extends outside the inner periphery of the substrate joint surface 28. The bonding interface between the lid bonding surface 26 and the substrate bonding surface 28 is horizontally extended downward from the uppermost surface of the resin substrate 16. This helps reduce the overall height or thickness of the package 10. The above package 10 has the following advantages. The thickness-reduced hollow portion 21 helps to form a cavity 24 ′ accommodating a semiconductor wafer 丨 8 _ while reducing the height or thickness of the resin substrate 丨 6 and the cover 20 respectively, so that the total height or thickness of the package becomes smaller. The upper surface j of the hollow portion 21 where the thickness of the semiconductor wafer 18 is reduced is lower than the uppermost portion 22 of the resin substrate 16 surrounding the bulge. This structural feature is useful to prevent the flux from entering the cavity 24 improperly. In other words, the

第23頁 556330Page 23 556330

隆起周圍部分22係作為焊劑障壁,其環繞著安裝有半導體 晶片1 8之厚度縮減中空部分2 1。該隆起周圍部分22的焊劑 障壁可以避免焊劑進入空穴24。如此不會造成該封裝半導 體裝置的電特徵與性能減弱。 、 此外’該蓋接合面26與基板接合面28的向内向下傾斜 平面在該隆起周圍部分2 2的焊劑障壁外側提供最大高度1 其使焊劑難以到達介於該蓋接合面26與該基板接合面28間 的界面’因而避免焊劑經由蓋接合面26與基板接合面28 ^ 之界面進入空穴24。 曰 上述結構特性亦有利於有效地縮減該厚度縮減中空部 分2 1的厚度,如此縮小該厚度縮減中空部分2丨的上下表面 間之距離’因而使得自厚度縮減中空部分2丨上表面延伸 至該樹脂基板16底部周圍之引線長度變小。引線14的長 度縮減會降低其電感。引線14的電感降低使得容易 頻半導體裝置的不良高頻損失。 此外’各條引線1 4包括中間傾斜部分。該傾斜延伸亦 有利於更進一孫縮減貫穿樹脂基板16的引線14長度。引線 14的進一步縮減長度會進一步降低其電感。引線的進一步 降低電感使得容易進一步抑制該高頻半導體裝置的高頻損 ^述結構特性可能在確保容納該半導體晶片丨8的空穴 2^充分空間下,有效縮減該蓋2〇高度。如此可以有效縮 该封裝的總高度。 此外’該蓋接合面26與基板接合面28彼此緊密嚙合,The raised peripheral portion 22 serves as a solder barrier and surrounds the thickness-reduced hollow portion 21 where the semiconductor wafer 18 is mounted. The solder barrier of the raised peripheral portion 22 prevents the solder from entering the cavity 24. This will not cause the electrical characteristics and performance of the packaged semiconductor device to deteriorate. In addition, the inwardly and downwardly inclined plane of the cover joint surface 26 and the substrate joint surface 28 provides a maximum height outside the solder barrier of the perimeter portion 2 2 which makes it difficult for the flux to reach the substrate between the cover joint surface 26 and the substrate. The interface between the faces 28 'thus prevents the flux from entering the cavity 24 via the interface between the cover joining surface 26 and the substrate joining surface 28'. Said above-mentioned structural characteristics are also conducive to effectively reducing the thickness of the thickness-reduced hollow portion 21, thus reducing the distance between the upper and lower surfaces of the thickness-reduced hollow portion 2 丨 and thus extending from the thickness-reduced hollow portion 2 丨 the upper surface to the The lead length around the bottom of the resin substrate 16 becomes smaller. A reduction in the length of the lead 14 reduces its inductance. The decrease in the inductance of the lead wire 14 makes it easy to cause poor high-frequency losses in the semiconductor device. In addition, each of the leads 14 includes a middle inclined portion. This oblique extension also helps to further reduce the length of the lead wire 14 passing through the resin substrate 16. Further reduction in the length of the lead 14 further reduces its inductance. The further reduction of the inductance of the leads makes it easy to further suppress the high-frequency loss of the high-frequency semiconductor device. The structural characteristics may effectively reduce the height of the cover 20 while ensuring a sufficient space to accommodate the holes 2 in the semiconductor wafer. This effectively reduces the overall height of the package. In addition, the cover joint surface 26 and the substrate joint surface 28 are closely meshed with each other,

第24頁 556330 五、發明說明(21) 該傾斜面或非水 動對準該蓋20與 對準功能使得可 不需要任何過高 裝10外部形狀無 屬線不會產生任 以大量製造,並 隆起周圍部分22 在基板接合面28 合面28間之接合 伸。如此有助於 而且蓋接合面26與基板接合面28各者包括 平面,其中因蓋20本身重量之故,造成自 該樹脂基板1 6的自動對準功能。此種自動 以使用自動組裝機器進行自動組裝方法, 之人工精確度。上述自動對準功能使該封 缺陷。該封裝1 0的無缺陷外部形狀使該金 何不良的斷路。上述自動對準功能亦能用 改善最終產物的產率。 此外,該蓋接合面26在樹脂基板16的 平坦表面内侧延伸。該蓋接合面26的内圍 内圍外侧延伸。介於蓋接合面26與基板接 界面係自該樹脂基板1 6最上面水平向下延 縮減封裝1 0的總高度或厚度。 : 3传枢兹/Λ考圖/詳細說明根據本發明之第二實施例。圖 ^ X Λ Λ .0" / ^"" ",J ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 、,、σ構杈面放大圖。此第二實施例之封裝與本 歹之封裝不同處在於嚙合基板與蓋接合面。貝 曰H ^有空穴結構的封裝40包括一樹脂基板42、一半導體 m 一蓋44。該樹脂基板42更包括—晶粒塾12與四條 斑隆ΪΙΪ14。該樹脂基板42包括一厚度縮減中空部分43 中* i ί圍t分45。該隆起周圍部分45環繞著該厚度縮減 二σ ^刀43環形延伸。該厚度縮減中空部分43的上表面水Page 24 556330 V. Description of the invention (21) The inclined surface or non-hydraulic alignment of the cover 20 and the alignment function makes it possible to avoid any excessive installation. 10 The external shape of the line does not produce any mass production and bulge. The peripheral portion 22 extends from the joint surface 28 to the joint surface 28 of the substrate. This is helpful and each of the cover bonding surface 26 and the substrate bonding surface 28 includes a flat surface, and the automatic alignment function from the resin substrate 16 is caused by the weight of the cover 20 itself. This kind of automatic uses the automatic assembly method to perform the automatic assembly method, the manual precision. The automatic alignment function described above makes the seal defective. The defect-free external shape of the package 10 breaks the metal badly. The above-mentioned automatic alignment function can also be used to improve the yield of the final product. In addition, the lid joint surface 26 extends inside the flat surface of the resin substrate 16. The inner periphery of the lid joint surface 26 extends outside the inner periphery. The interface between the lid joint surface 26 and the substrate is horizontally downward from the uppermost surface of the resin substrate 16 to reduce the total height or thickness of the package 10. : 3 Chuanshuzi / Λ Kotu / Detailed description of the second embodiment according to the present invention. Figure ^ X Λ Λ .0 " / ^ " The package of this second embodiment differs from the package of this embodiment in that it engages the substrate and cover joint surfaces. The package 40 having a cavity structure includes a resin substrate 42, a semiconductor m, and a cover 44. The resin substrate 42 further includes the crystal grains 12 and the four ridges 1 to 14. The resin substrate 42 includes a reduced-thickness hollow portion 43 of the hollow portion 43. The raised peripheral portion 45 extends annularly around the thickness-reducing sigma blade 43. Water on the upper surface of the reduced thickness hollow portion 43

第25頁 556330 五、發明說明(22) 平低於該隆起周圍部分45的最上面 作為焊劑障壁,使焊劑不會進入厚 該隆起周圍部分45環繞著隆起 該隆起周圍部分45包括内壁、與該 坦表面、一向内向下傾斜面與一平 接合在該向内向下傾斜面與該内壁 内壁外側與該向内向下傾斜面内侧 平高於該厚度縮減中空部分43的上 該平坦表面。 该向内向下傾斜面接合在該平 間。該向内向下傾斜面係在該平坦 内側延伸。該平坦表面係接合在該 壁之間。該平坦表面在該向内向下 側延伸。該平坦高地的平面圖呈圓 傾斜角度。該向内向下傾斜面的平 内向下傾斜面具有均勻傾斜角度。 =向下傾斜面的立體形狀相當於一 °之’短截頂圓錐的内面。該向内 接合用之第一基板接合面46。該平 a之第二基板接合面48。該第一與 之組合提供該結合基板接合面。 蓋44係與第一及第二基板接合 其中第一及第二基板接合面46及48 向内向下傾斜面與隆起周圍部分4 5 。該隆起周圍部分45係 度縮減中空部分43内。 周圍部分43環形延伸。 内壁相對之外壁和一平 坦高地。該平坦高地係 之間。該平坦高地在該 延伸。該平坦高地的水 表面,但是其水平低於 坦南地與該 高地外側與 向内向下傾 傾斜面外側 形帶狀,其 面圖呈圓形 以幾何觀點 圓錐形内面 向下傾斜面 坦南地亦提 第二基板接 平坦表面之 該平坦表面 斜面與該外 與該外壁内 橫剖面圖無 帶狀。該向 來看,該向 一部分,換 提供與蓋4 4 供與蓋44接 合面46和48 面4 6及4 8接合或黏附, 分別包括樹脂基板4 2的 ,因而該樹脂基板4 2與Page 25 556330 V. Description of the invention (22) Leveling lower than the uppermost part of the perimeter of the hump 45 as a solder barrier, so that the flux does not enter thick. The perimeter of the hump 45 surrounds the hump. The flat surface, an inward downward inclined surface, and a flat surface are joined to the inward downward inclined surface, the outer side of the inner wall and the inner downward inclined surface, which are flatter than the upper surface of the thickness-reduced hollow portion 43. The inwardly downward sloping surface engages the floor. The inwardly downward sloping surface extends on the flat inner side. The flat surface is bonded between the walls. The flat surface extends inwardly and downwardly. The plan view of the flat upland is circularly inclined. The inwardly downwardly inclined plane has a uniformly downwardly inclined plane. = The three-dimensional shape of the downwardly sloping surface is equivalent to the inner surface of a short truncated cone. The first substrate bonding surface 46 for the inward bonding. The flat a second substrate bonding surface 48. The first and the combination provide the bonding substrate bonding surface. The cover 44 is bonded to the first and second substrates, wherein the first and second substrate bonding surfaces 46 and 48 are inclined inwardly and downwardly, and the peripheral portion 4 5 is raised. The raised peripheral portion 45 is reduced in the hollow portion 43. The peripheral portion 43 extends in a ring shape. The inner wall is opposite the outer wall and a flat height. The flat highlands are between. The flat high ground extends at the. The water surface of the flat upland, but its level is lower than that of Tanandi, the outer side of the highland, and the inward-downward sloping surface of the sloping surface. The shape of the surface is circular. From the geometric point of view, the cone-shaped sloping surface faces down the sloping surface. It is also mentioned that the second substrate is connected to a flat surface and the flat surface inclined surface and the outer and inner cross-sectional views of the outer wall have no band shape. From this perspective, a part of this orientation is provided for joining or adhering with the cover 4 4 and the cover 44 with the joint surfaces 46 and 48 surfaces 46 and 48 respectively including the resin substrate 4 2, so the resin substrate 4 2 and

第26頁 556330 五、發明說明(23) 该蓋44共同界定容納半導體晶片18之空穴 助於降低寄生電感。蓋44包括—碟形主體47* =穴亦有 部分49,其環繞該碟形主體47的周圍環形延;申-J起周圍 體47通常既平且㈣。該隆 ,碟形主 脂基板42隆起。 岡丨刀49係向下且向該樹 該隆起周圍部分49包括内壁、與 -平坦底㊆,以及一向内向下傾斜面,作==卜壁及 “與樹脂基板42接合,而且内壁朝下。該;括底' =蓋 向内向下傾斜面之間接合。該平坦底面在: 側與該向内向下傾斜面内側延伸。由仰 卜 下傾斜面呈圓形帶狀1向内向下傾斜面係在該平= 與忒外壁之間接合。由仰視圖時’該向内向下傾斜面呈圓 形帶狀。由幾何觀點來看,該向内向下傾斜面的立體形狀 相s於一圓錐形外面一部分,換言之,短截頂圓錐的外 面。Page 26 556330 V. Description of the invention (23) The cover 44 collectively defines the cavity containing the semiconductor wafer 18 and helps reduce parasitic inductance. The cover 44 includes a dish-shaped body 47 * = a cavity also having a portion 49 which extends in a ring shape around the circumference of the dish-shaped body 47; the surrounding body 47 is usually flat and flat from Shen-J. This ridge, the dish-shaped main grease substrate 42 bulges. The knife 49 is directed downward and toward the tree. The surrounding area 49 of the bulge includes an inner wall, a flat bottom, and an inclined surface inward and downward, as the wall and "joined with the resin substrate 42, with the inner wall facing downward. The bottom bracket = joint between the inwardly and downwardly inclined surface of the cover. The flat bottom surface extends at: the side and the inwardly downwardly inclined surface. The downwardly inclined surface is shaped like a circular belt by the lower and lower inclined surface. The flat surface is joined to the outer wall of the ridge. From the bottom view, the inward downward slope is a circular strip. From a geometric point of view, the three-dimensional shape of the inward downward slope is like a cone. Part, in other words, the outside of the truncated cone.

蓋44的向内向下傾斜面提供第一蓋接合面5〇,其與樹 脂基板42的第一基板接合面46對準並喃合。蓋44的平坦底 面提供第二蓋接合面5 2,其與樹脂基板4 2的第二基板接合 面48對準並喃合。第一蓋接合面5〇具有一均勻傾斜角度, 其與上述第一樹脂基板4 6的均勻傾斜角度相同,如此第一 蓋接合面50與第一基板接合面46緊密接觸並嚙合。第二蓋 接合面52沒有傾斜角度,其與上述第二基板接合面48相 同,因此第二蓋接合面52與第二基板接合面48緊密接觸並 嚙合。如詳細圖解,第二蓋接合面52的寬度可以選擇性比The inwardly and downwardly inclined surface of the cover 44 provides a first cover engaging surface 50 which is aligned with and fused with the first substrate engaging surface 46 of the resin substrate 42. The flat bottom surface of the cover 44 provides a second cover-engaging surface 52, which is aligned with the second substrate-engaging surface 48 of the resin substrate 42 and fused. The first cover engaging surface 50 has a uniform inclination angle, which is the same as the above-mentioned uniform inclination angle of the first resin substrate 46, so that the first cover engaging surface 50 and the first substrate engaging surface 46 are closely contacted and engaged. The second cover-engaging surface 52 has no inclination angle, and is the same as the above-mentioned second substrate-engaging surface 48. Therefore, the second cover-engaging surface 52 and the second substrate-engaging surface 48 are in close contact and mesh with each other. As illustrated in detail, the width of the second cover joint surface 52 may be selectively

第27頁 556330 五、發明說明(24) 第一基板接合面4 8窄。 上述封裝4 0提供下列優點。 與第-實施例相同的是,該厚度縮減中空部 = 體晶片18的空穴24,同時樹脂基板42 = 小的间度或厚度分別縮》咸’因此該封裴的總高度或厚度變 :&者安裝有半導體晶片18之厚度縮減中空部分 以隆起周圍部分45的焊劑障壁可以避免焊劑進入空穴 如此不會造成該封裝半導體裝置的電特徵與性能減 壁 43 24 弱 产施例相同的&,安裝有半導體晶片18的厚 $鬥目邱八=°卩/刀43之上表面水平低於該樹脂基板42之隆起 二αA的最上面。此種結構特性有利於避免焊劑不當 辟0 = 乂4。換言之,該隆起周圍部分45係作為焊劑障 θ下:ϊ ί 7實施例相同的是,該第-蓋接合面50的向内 m r m ^ ^ f 基板接合面46在該隆起周圍部分45之焊 劑P早壁外側處提供 古 ,,i 篦一莫拔人二c ,、被大间度。如此使該焊劑很難到達介於 弟一蓋接合面50愈楚 ^ ± κ ,^ ^ ^ ^ /、第一基板接合面46之間的界面,因而避 進入空穴24。 盍接a面50與第一基板接合面46的界面 亦Si第一*售1 # y 減少該厚度縮減的A,上述結構特性亦能有效地 縮減中空部分43上;:”刀43的厚度’如此縮減介於該厚度 縮減中空部分43上I表面之間的距離,因而縮減自該厚度 表面延伸至該樹脂基板42底部周圍的引Page 27 556330 V. Description of the invention (24) The first substrate bonding surface 48 is narrow. The above-mentioned package 40 provides the following advantages. The same as the first embodiment, the thickness is reduced by the hollow portion = the cavity 24 of the body wafer 18, while the resin substrate 42 = the small interval or thickness is reduced, so the total height or thickness of the seal is changed: & The thickness of the hollow portion of the semiconductor wafer 18 is reduced to bulge the solder barrier of the surrounding portion 45 to prevent the flux from entering the cavity so that the electrical characteristics and performance of the packaged semiconductor device are not reduced. 43 24 & The thickness of the upper surface of the semiconductor substrate 18 with the thickness of Doubu Qiu Ba = ° 卩 / knife 43 is lower than the uppermost surface of the resin substrate 42's ridges αA. This kind of structural characteristics is conducive to avoid improper flux. 0 = 乂 4. In other words, the raised peripheral portion 45 serves as a flux barrier θ: 7 The same as in the seventh embodiment, the inward mrm ^ ^ f of the first cover joint surface 50 of the substrate joint surface 46 on the raised peripheral portion 45 is the flux P On the outer side of the early wall, there are ancient, i, one mob, two c, and quilt. This makes it difficult for the flux to reach the interface between the first and second joint surfaces 50, ^ ± κ, ^ ^ ^ ^ /, and the first substrate joint surface 46, thereby avoiding entering the cavity 24. The interface between the a-side 50 and the first substrate joint surface 46 is also the first Si * Sale 1 # y to reduce the thickness reduction A, the above structural characteristics can also effectively reduce the hollow portion 43 ;: "The thickness of the knife 43 ' In this way, the distance between the I-surfaces on the thickness-reduced hollow portion 43 is reduced, so that the lead extending from the thickness surface to the periphery of the bottom of the resin substrate 42 is reduced.

第28頁 556330 五、發明說明(25) 電威5 ί f :引線14的長度縮短會降低其電感。引線14的 電戊容易抑制該高頻半導體裝置的高頻損失。 充分*二G 特性能進一步在確保容納該半導體晶片18的 減兮封^ A工間下’有效降低該蓋高度。如此可以有效縮 成遠封裝的總高度。 密啮2外’第一蓋接合面50與第-基板接合面46彼此緊 該傾;面:與第-基板接合面46各包括 動對準丄 ④中因蓋44本身重量之故,造成自 對準功=蚀…该樹脂基板42的自動對準功能。此種自動 不兩要r/侍:以使用自動組裝機器進行自動組裝方法, 裝二外二j 3:之人工精確度。上述自動對準功能使該封 i $ 1 ^ 4、、、缺陷。該封裝40的無缺陷外部形狀使該金 以大量;造的斷路。上述自動對準功能亦能用 八里i每,並改善最終產物的產率。 密喊2外而ί ί :蓋接合面52與第二基板接合面48彼此緊 括-面戈j二蓋接合面52與第二基板接合面48各包 -A :接= 使得容易在該第二蓋接合面52與第 二,板接合面48至少一者上塗覆黏合 脂基板42。如此有助於改善封裝 接口羞44與祕 I三實施例: 茲將參考圖式詳細說明根據本發明 r 内部結構橫剖面放大圖。此第三實施例之封裝:賴第封一裝實之施 556330 五、發明說明(26) 例中之封裝的不同處在於基板與蓋接合面。 曰H 有空^結構的封裝6〇包括一樹脂基板62、一半導體 : 與一蓋64。該樹脂基板62更包括一晶粒墊12與四條 「盘且線14。該樹脂基板62包括-厚度縮減中空部分厂 法、隆处起周圍部分65。該隆起周圍部分65環繞著該厚度縮 =工部分63環形延伸。該厚度縮減中空部分㈡的上表 ίΓί於該隆起周圍部分65的最上面。該隆起周圍部分65 =作為焊劑障壁’使焊劑不會進人厚度縮減中空部分Μ ,隆起周圍部分65環繞著隆起周圍部分63環 =周圍部分65包括内壁、與該内壁相對之外壁以:一 2卜向下傾斜面。該向外向下傾斜面係在内外壁之 ;二=卜向下傾斜面在該内壁外側與該外壁 :。 傾斜面的平面圖呈圓形帶狀。: :的立體形狀相當於一圓錐形一部分u向c 截頂圓錐的外面。胃向外向下傾斜面 == 板接合面66。 /、蓋接合之基 該蓋64與基板接合面66接合或黏附 面66包括樹脂基板62之隆起周圍部分65的向合 面,因而该樹脂基板62與該蓋64共同界定容^ '曰 18之空穴24。㉟空穴亦有助於降低 、’。=:片 碟形主體67與-隆起周圍部分69,其環^⑽包括- 周圍環形延伸。該碟形主體67通常 形主體67的 巾兄十且較薄。該隆起周Page 28 556330 V. Description of the invention (25) Electric wire 5 ί f: Shortening the length of the lead wire 14 will reduce its inductance. The electric charge of the lead 14 easily suppresses the high-frequency loss of the high-frequency semiconductor device. The sufficient * two G characteristics can further effectively reduce the height of the cover while ensuring that the semiconductor wafer 18 is housed in a reduced space. This effectively reduces the overall height of the remote package. The first cover joint surface 50 and the first substrate-joint surface 46 are tightly tilted toward each other. Surface: Each of the first substrate-joint surfaces 46 and the first substrate-joint surface 46 includes a dynamic alignment. Alignment work = etch ... The automatic alignment function of the resin substrate 42. This kind of automatic does not require r / server: the automatic assembly method is to use an automatic assembly machine, and the manual precision of the second and second j 3 :. The above automatic alignment function makes the seal i $ 1 ^ 4,, and defects. The defect-free outer shape of the package 40 causes the gold to be broken. The above-mentioned automatic alignment function can also be used to improve the yield of the final product. Shout 2 outside and cover: The cover joint surface 52 and the second substrate joint surface 48 are tightly coupled to each other-each of the two cover joint surfaces 52 and the second substrate joint surface 48 is packaged -A: then = makes it easy to At least one of the second cover joint surface 52 and the second plate joint surface 48 is coated with an adhesive grease substrate 42. This helps to improve the package interface 44 and the third embodiment. The enlarged cross-sectional view of the internal structure according to the present invention will be described in detail with reference to the drawings. The package of this third embodiment: the first package and the implementation of the package 556330 V. Description of the invention (26) The difference in the package in the example is the joint surface of the substrate and the cover. The package 60 with a free structure includes a resin substrate 62, a semiconductor: and a cover 64. The resin substrate 62 further includes a die pad 12 and four "pan and wires 14." The resin substrate 62 includes-a thickness reduction hollow part factory method, and a raised portion 65. The raised portion 65 surrounds the thickness reduction = The working portion 63 extends in a ring shape. The thickness-reduced hollow portion ㈡'s upper surface is on the top of the bulge surrounding portion 65. The bulging surrounding portion 65 = acts as a solder barrier 'so that the flux does not enter the thickness reducing hollow portion M, and the perimeter of the bulging The part 65 surrounds the bulge and the surrounding part 63 ring = the surrounding part 65 includes an inner wall and an outer wall opposite to the inner wall: a 2 b downward inclined surface. The outward downward inclined surface is tied to the inner and outer walls; 2 = b inclined downward The plane is outside the inner wall and the outer wall: The plan view of the inclined surface is a circular band. :: The three-dimensional shape is equivalent to the outer part of a truncated cone of u to c. The inclined surface of the stomach downwards == plate joint面 66。 /, the base of the cover joint The cover 64 is joined or adhered to the substrate joint surface 66 or the adhesive surface 66 includes a facing surface of the raised peripheral portion 65 of the resin substrate 62, so the resin substrate 62 and the cover 64 jointly define the contents ^ ' 18 的 孔 24. ㉟void also helps to reduce, '. ==: the plate-shaped body 67 and-the bulging peripheral portion 69, the ring ^ ⑽ includes-the surrounding ring extends. The dish-shaped body 67 is generally shaped as the main body 67 The towel brother is ten and thin. The uplift week

第30頁 556330 五、發明說明(27) 圍部分69係向下且向該樹脂基板62隆起。 該隆起周圍部分69包括内壁、與該内壁相對的外壁以 及向外向下傾斜面,其先決條件係蓋64與樹脂基板62接 合,而且該内壁朝下。該向外向下傾斜面係在該内外壁之 間接合。該向外向下傾斜面在該内壁外側以及該外壁内側 之間延伸。以仰視圖時,該向外向下傾斜面呈圓形帶狀。 以幾何觀點來看,該向外向下傾斜面的立體形狀相當於圓 錐形一部分的内面,換言之,相當於短截頂圓錐的内面。 蓋64的向外向下傾斜面提供一蓋接合面68,其與樹脂 基板62的基板接合面66對準並嚙合。該蓋接合面68具有一 均勻傾斜角度,其與上述基板接合面⑽的均勻傾斜角度相 同因此蓋接合面68與基板接合面66緊密接觸並响合。 如评細圖解, 接合面6 6窄。換句 面66的外圍裡面, 66的内圍外面。 可能選擇性比基板 外圍位在基板接合 圍位在基板接合面 該蓋接合面68的寬度 話說’蓋接合面68的 同時蓋接合面68的内 上述封裝6 0提供下列優點。 該厚度縮減中空部分63有助於形成容納半導體晶片1 8 :空▲穴24 ’同時該樹脂基板62與蓋64的高度或厚度:小, 因此該封裝的總高度或厚度變小。 安裝有半導體晶片18之厚度縮減中空部⑽的上表面 ίΐίϊ樹脂基板62之隆起周圍部分65的最上面。此種社 構特性有助於避免焊劑進入空穴24内。換 、、° 圍部分65係作為障壁,其環繞安裝有半導體晶片】8之J周Page 30 556330 V. Description of the invention (27) The surrounding portion 69 is downward and protrudes toward the resin substrate 62. The bulging peripheral portion 69 includes an inner wall, an outer wall opposite to the inner wall, and an outwardly inclined surface. The prerequisite is that the cover 64 is connected to the resin substrate 62 with the inner wall facing downward. The outwardly and downwardly inclined surface is joined between the inner and outer walls. The outward-downward inclined surface extends between the outside of the inner wall and the inside of the outer wall. In a bottom view, the outwardly downwardly inclined surface is in the shape of a circular band. From a geometric point of view, the three-dimensional shape of the outwardly downwardly sloping surface corresponds to the inner surface of a part of a circular cone, in other words, the inner surface of a truncated cone. The outwardly downwardly inclined surface of the cover 64 provides a cover engaging surface 68 which is aligned with and engages with the substrate engaging surface 66 of the resin substrate 62. The cover joint surface 68 has a uniform inclination angle, which is the same as the uniform inclination angle of the above-mentioned substrate joint surface ⑽. Therefore, the cover joint surface 68 and the substrate joint surface 66 are in close contact with each other. As shown in the detailed diagram, the joint surface 6 6 is narrow. In other words, the inside of the face 66 is outside, and the inside of the face 66 is outside. It may be more selective than the substrate. The periphery of the substrate is located on the substrate. The width of the cover interface 68 is the same as that of the cover surface 68. The above package 60 provides the following advantages. The thickness-reduced hollow portion 63 contributes to the formation of the semiconductor wafer 1 8: hollow ▲ cavity 24 ′. At the same time, the height or thickness of the resin substrate 62 and the cover 64: small, so the total height or thickness of the package becomes smaller. The upper surface of the thickness-reduced hollow portion 半导体 on which the semiconductor wafer 18 is mounted is the uppermost portion of the raised peripheral portion 65 of the resin substrate 62. This structural characteristic helps to prevent the flux from entering the cavity 24. The surrounding area 65 is used as a barrier, which surrounds the semiconductor wafer.

第31頁 556330 五、發明說明(28) 度縮減中空部分6 3。該隆起周圍部分6 5的焊劑障壁可以避 免焊劑進入空穴2 4内。如此使該封裝半導體裝置的電特徵 與性能不會減弱。 此外’蓋接合面6 8的寬度可能比基板接合面6 6窄。換 曰之’蓋接合面6 8的外圍在基板接合面6 6的外圍内側,而 蓋接合面68的内圍在基板接合面66的内圍外側。此結構特 性加強了自動對準功能。若蓋64未對準地放置在樹脂基板 62上’該寬基板接合面66會頂住蓋接合面68,並使蓋64盥 樹脂基板62自動對準。 μP.31 556330 V. Description of the invention (28) Degree of reduction of hollow part 63. The solder barriers around the ridges 65 prevent the solder from entering the cavities 24. In this way, the electrical characteristics and performance of the packaged semiconductor device are not impaired. In addition, the width of the cover bonding surface 68 may be narrower than that of the substrate bonding surface 66. In other words, the outer periphery of the lid joint surface 68 is inside the outer periphery of the substrate joint surface 66, and the inner periphery of the lid joint surface 68 is outside the inner periphery of the substrate joint surface 66. This structural feature enhances the automatic alignment function. If the cover 64 is placed on the resin substrate 62 out of alignment, the wide substrate joining surface 66 will abut against the cover joining surface 68 and automatically align the cover 64 with the resin substrate 62. μ

上述結構特性亦有助於有效縮減厚度縮減中空部分63 的厚度,如此使厚度縮減中空部分63上下表面間的距離變 ^,因而可以縮短自厚度縮減中空部分63上表面延伸至樹 月旨巧62底部周圍的引線14長度。引線“的長度縮短會降 低其電感。引線14電感降低使得容易抑制高頻半 的不良高頻損失。 體晶片18的空穴24 。如此得以有效降 上述結構特性可以在確保容納半導 充分空間之下,進一步降低蓋64的高度 低該封裝之總高度。 此夕卜The above structural characteristics also help to effectively reduce the thickness and thickness of the hollow portion 63, so that the distance between the upper and lower surfaces of the thickness-reduced hollow portion 63 becomes ^, so that it can be shortened from the upper surface of the thickness-reduced hollow portion 63 to the tree moon purpose 62 The length of the lead 14 around the bottom. The shortened length of the lead wire will reduce its inductance. The reduced inductance of the lead wire 14 makes it easy to suppress the bad high frequency loss of the high frequency and half. The cavity 24 of the body wafer 18. This can effectively reduce the above structural characteristics while ensuring sufficient space to accommodate the semiconductor. Then, the height of the cover 64 is further lowered to lower the total height of the package.

且蓋接人而合面68與基板接合面66彼此緊密嚙合 面,由:蓋64: ί板接合面66各包括該傾斜面或非水』 板62之自動對準量之故’造成自動對準蓋64與樹月 動組裝機二動對準功能使得可以❸ 確度。上? “自動裝方法’丨需要任何過高之人J ,L 對準功能使該封裝6 0外部形狀無缺陷,And the cover is in contact with the mating surface 68 and the substrate bonding surface 66, which are closely meshed with each other. The cover 64: the plate bonding surfaces 66 each include the inclined surface or the non-water plate. The two-action alignment function of the quasi-cover 64 and Shuyue moving assembly machine makes it possible to achieve accuracy. on? "Automatic assembly method" 丨 needs any person who is too high J, L alignment function makes the package 60 external shape without defects,

第32頁 556330 五、發明說明(29) 封裝60的無缺陷外部形狀使該金屬線不會產生任何不良的 斷路。上述自動對準功能亦能用以大量製造,並改盖^終 產物的產率。 °^ 此外,該基板接合面6 6具有一内部延伸區,其自蓋接 合面68的内圍以向内向上方向進一步延伸。該連向外向下 傾斜平面在焊劑障壁外侧提供彼最大高度。假設因毛二管 現象之故,該焊劑一部分通過基板接合面66與蓋接合面Μ 間之界面,基板接合面6 6的内部延伸區使得該部分 難沿著内部延伸區以向内方向爬升。 aPage 32 556330 V. Description of the invention (29) The defect-free external shape of the package 60 prevents the metal wire from causing any undesirable disconnection. The above-mentioned automatic alignment function can also be used for mass production, and it can change the yield of the final product. In addition, the substrate bonding surface 66 has an inner extension region, which further extends from the inner periphery of the cover bonding surface 68 in an upward direction. The sloping outwardly inclined plane provides that maximum height outside the solder barrier. It is assumed that due to the capillary phenomenon, a part of the flux passes through the interface between the substrate joint surface 66 and the cover joint surface M. The internal extension area of the substrate joint surface 66 makes it difficult for the portion to climb inward along the internal extension area. a

簋四實施例: y茲將參考圖式詳細說明根據本發明之第四實施例。廟 5係根據本發明第四實施例之具有空穴結構的新穎封之 内部結構橫剖面放大圖。此第四實施例之 " 例中之封裝的不同處在於基板與蓋接合面々第—貫施 具有空穴結構的封裝70包括一 晶片18與一蓋74。 一組之引線14。該 與隆起周圍部分75 中空部分73環形延 平低於該隆起周圍 作為焊劑障壁,使 該隆起周圍部 該隆起周圍部分75 樹脂基 該樹脂基板72更包括一 樹脂基板7 2包括一厚度 。該隆起周圍部分75環 伸。該厚度縮減中空部 部分75的最上面。該隆 焊劑不會進入厚度縮減 分75環繞著隆起周圍部 包括内壁、與該内壁相 晶粒墊1 2與四 縮減中空部分 繞著該厚度縮 分73的上表面 起周圍部分7 5 中空部分73内 分7 3環形延伸 對之外壁以及24th Embodiment: A fourth embodiment according to the present invention will be described in detail with reference to the drawings. Temple 5 is an enlarged cross-sectional view of the internal structure of a novel seal having a cavity structure according to a fourth embodiment of the present invention. The difference in the package of the " example " of this fourth embodiment is that the substrate and the cover are bonded to each other. The package 70 having a cavity structure includes a chip 18 and a cover 74. A group of leads 14. The ring-shaped flattening with the perimeter portion 75 of the hollow portion 73 is lower than the perimeter of the ridge as a solder barrier, so that the perimeter portion of the ridge, the perimeter portion of the ridge 75 is resin-based, the resin substrate 72 further includes a resin substrate 72, and includes a thickness. The perimeter of the bulge 75 is extended. The thickness-reduced hollow portion 75 is the uppermost portion. The bulge flux does not enter the thickness reduction section 75. It surrounds the perimeter of the bulge including the inner wall, and the crystal pads 12 and four reduced hollow sections are formed around the upper surface of the thickness reduction section 73. The hollow section 73 surrounds the inner wall. Inner division 7 3 annular extension to outer wall as well

556330556330

圓形凹槽。該圓形凹槽係位 該圓形凹槽的平面圖呈圓形 呈拱形。以幾何觀點來看f 一圓環的下半部。該圓形凹 合面7 6。 於内壁外側與外壁内側之間。 帶狀。該圓形凹槽的橫剖面圖 該圓形凹槽的立體形狀相當於 槽提供與蓋7 4接合用之基板接 蓋74 包括樹脂 脂基板72 空穴亦有 隆起周圍 形延伸。 分79係向 隆起 一圓形隆 該内壁朝 起的仰視 斜面的立 附,該基板接合面7 6 圓形凹槽,因而該樹 晶片18之空穴24。該 括一碟形主體77與一 環繞該碟形主體77環 較薄。該隆起周圍部 内壁相對之外壁以及 月曰基板7 2接合,而且 之間接合。該圓形隆 來看,該向内向下傾Round groove. The circular groove is circular. The plan view of the circular groove is circular and arched. From the geometric point of view, the lower half of the f-ring. The circular concave surface 7 6. Between the outside of the inner wall and the inside of the outer wall. Ribbon. A cross-sectional view of the circular groove. The three-dimensional shape of the circular groove is equivalent to that of the groove. The substrate is provided for joining with the cover 74. The cover 74 includes a resin substrate 72. The cavity also has a bulge-shaped extension. The 79 points are bulged to a circular bulge, and the inner wall faces up. The sloping surface is attached. The substrate joint surface 7 6 is a circular groove, so the cavity 24 of the tree wafer 18. The dish-shaped body 77 and the ring surrounding the dish-shaped body 77 are thinner. The inner wall of the bulging peripheral portion is bonded to the outer wall and the base plate 72, and is bonded to each other. Looking at the circular bulge,

係與基板接合面76接合或黏 基板72之隆起周圍部分75的 與蓋74共同界定容納半導體 助於降低寄生電感。蓋74包 部分79,該隆起周圍部分係 该碟形主體7 7通常既平坦且 下且朝向樹脂基板72隆起。 周圍部分79包括内壁、與該 起’其先決條件係蓋7 4與樹 下。邊圓形隆起係在内外壁 圖呈圓形帶狀。以幾何觀點 體形狀相當於圓環的下半部The substrate 74 is bonded to or adhered to the bulging peripheral portion 75 of the substrate 72, and the cover 74 defines the accommodating semiconductor to help reduce parasitic inductance. The cover 74 covers the portion 79, and the perimeter of the bulge is generally flat and downward and bulges toward the resin substrate 72. The surrounding portion 79 includes an inner wall, and its preconditions are covered 74 and under the tree. The side-circle bulges are in the shape of circular bands on the inner and outer walls. From a geometric point of view, the volume corresponds to the lower half of the ring

蓋74的圓形隆起提供蓋接合面78,其與樹脂基板72之 基板接合面76對準並嚙合。蓋接合面78具有一曲率,其大 體上與上述基板接合面76的中央區相同,如此蓋接合面 78與基板接合面76緊密接觸並嚙合。 如詳細圖解,蓋接合面7 8的寬度比基板接合面7 6窄。 基板接合面76具有一内部延伸區,其係自蓋接合面78的内 圍,以向内且向上方向進一步延伸。假設因毛細管現象,The circular protrusion of the cover 74 provides a cover engaging surface 78 which is aligned with and engages with the substrate engaging surface 76 of the resin substrate 72. The lid joint surface 78 has a curvature which is substantially the same as the central region of the above-mentioned substrate joint surface 76, so that the lid joint surface 78 and the substrate joint surface 76 are in close contact and engaged with each other. As illustrated in detail, the width of the lid bonding surface 78 is narrower than that of the substrate bonding surface 76. The substrate bonding surface 76 has an internal extension region which extends from the inside of the cover bonding surface 78 so as to further extend inward and upward. Suppose that due to capillary phenomena,

第34頁 556330 五、發明說明(31) 該焊劑一部分通過基板接合面76與蓋接合面78 基板接合面76的内部延伸區使得該部分焊劑报^ f面, 部延伸區爬升。如此確保焊劑不會進入該介二 /σ耆該内 上述封裝70提供下列優點。 二八内。 該厚度縮減中空部分73有助於形成容納 之空穴24,同時樹脂基板72與蓋74的高度或,曰曰片18 減,如此降低該封裝的總高度或厚度。 又刀別縮 女裝半導體晶片18之厚度縮減中空部分μ 平低於樹脂基板72的隆起周圍部分75 f2 、 表面水 =起周圍部分75係作料劑之障壁,其環繞著安^本J 劑障壁可以避免焊劑進入空穴24。如 導體裝置的電特徵與性能減弱。 /、波半 此外,基板接合面76的圓形凹禅合并從上 以及所使用黏合劑的過多部留住該焊劑 劑的過多部分進入…,並且用黏合 上。 处光黏附在+導體晶片1 8 上述結構特性亦可以有效降假呤后& 的厚度,因此縮短厚度縮ί中ί 輸 離,使得自厚度縮減中空部分73】;7面3土:表,的距 底部周圍之引線14長度縮短^線14 : $⑷日基板72 2高=的電感降低使得容易抑制高Page 34 556330 V. Description of the invention (31) A part of the flux passes through the internal extension area of the substrate joint surface 76 and the cover joint surface 78. The substrate joint surface 76 causes the part of the flux to report on the f side, and the partial extension area climbs up. In this way, it is ensured that the solder does not enter the dielectric / σ? The aforementioned package 70 provides the following advantages. Within twenty-eight. The thickness-reduced hollow portion 73 helps to form the cavity 24 to be accommodated, and at the same time, the height of the resin substrate 72 and the cover 74 or the sheet 18 is reduced, thus reducing the total height or thickness of the package. The thickness of the female semiconductor wafer 18 is reduced by reducing the thickness of the hollow portion μ, which is lower than the raised peripheral portion 75 f2 of the resin substrate 72, and the surface water = the surrounding portion 75 is a barrier for the agent, which surrounds the barrier It is possible to prevent the flux from entering the cavity 24. For example, the electrical characteristics and performance of the conductor device are weakened. /, Half wave In addition, the circular concave shape of the substrate joint surface 76 merges from above and the excessive portion of the adhesive used keeps the excessive portion of the flux from entering, and is adhered with the adhesive. Adhesion of the light to the + conductor wafer 1 8 The above structural characteristics can also effectively reduce the thickness of the pseudo-pigment & thus shorten the thickness reduction and reduce the loss, so that the hollow portion is reduced from the thickness. The length from the lead 14 around the bottom is shortened ^ Line 14: $ ⑷ 日 Substrate 72 2 High = The inductance is reduced to make it easy to suppress the high

第35頁 556330 五、發明說明(32) 右八ΐ Ϊ結構特性可以在確保容納半導體晶片18的空穴24 “二1 I ’進一步降低蓋74的高⑨。如此得以有效降 低该封裝之總高度。 ^ ^ ^蓋接合面78與基板接合面76彼此緊密嚙合,而 基ί接合面76包括圓形隆起與圓形凹槽, ^自動f+i a身重量之故,造成蓋74自動對準樹脂基板72 此種自動對準功能使得可以使用自動組 f機為進仃自動組裝方法,不需要任何過高之人工精確 二t ί : 2對準功能使該封裝7°外部形狀無缺陷。該封 "上:; 、=外部形狀使該金屬線不會產生任何不良的斷 :的i;自動對準功能亦能用以大量製造,並改善最終產 -面=右蓋ί合面78的寬度比基板接合面76窄。基板接 部延伸區二其自該蓋接合面78的内圍,以 邱八ϋ其i °延伸。假没因毛細管現象之故,該焊劑一 邰刀通過基板接合面76與蓋接合面78間之界面,該美 ;:7向延伸區使得該部分焊劑不會沿著該内;延伸 "° 方向爬升。如此確保焊劑不會進入空穴内。 第五實施例二 禆摘兹姑將士參恭考圖式詳細說明根據本發明之第五實施例。圖 係根據本發明第五實施例之具有空穴結構的新穎 内部結構橫剖面放大圖。此第五實施例之封裝與第一、 例中之封裝的不同處在於基板與蓋接合面。Page 35 556330 V. Description of the invention (32) The right ΐ ΐ structural characteristics can ensure that the cavity 24 "two 1 I 'of the semiconductor wafer 18 is further reduced to further reduce the height of the cover 74. This can effectively reduce the overall height of the package ^ ^ ^ The lid joint surface 78 and the substrate joint surface 76 are closely meshed with each other, and the base joint surface 76 includes a circular hump and a circular groove. ^ Automatic f + ia weight causes the lid 74 to automatically align with the resin Substrate 72 This automatic alignment function makes it possible to use an automatic assembly machine for the automatic assembly method, without any need for excessive manual precision. The alignment function makes the package 7 ° external shape without defects. "Upper:;, = The external shape does not cause any bad breaks in the metal wire: i; the automatic alignment function can also be used for mass production, and improve the width of the final product-surface = right cover helical surface 78 It is narrower than the substrate joint surface 76. The substrate joint extension area 2 extends from the inner periphery of the cover joint surface 78 by Qi Baqi and i °. Without a capillary phenomenon, the flux passes through the substrate joint surface with a trowel. The interface between 76 and the cover joint surface 78, the beauty;: 7 向 延Zone so that the part of the flux does not climb along the direction of the extension "°". This ensures that the flux does not enter the cavity. Fifth Embodiment 2 The second embodiment of the present invention will be described in detail with reference to the drawings. The fifth embodiment. The figure is an enlarged cross-sectional view of a novel internal structure with a cavity structure according to the fifth embodiment of the present invention. The difference between the package of the fifth embodiment and the package of the first and the embodiment is that the substrate and the cover are joined surface.

556330 五、發明說明(33) 具有空穴結構的封裝8 0包括一樹脂基板g 2、一半導體 晶片18與一蓋84。該樹脂基板82更包括一晶粒墊12與四條 一組之引線1 4。該樹脂基板8 2包括一厚度縮減中空部分8 3 與隆起周圍部分85。該隆起周圍部分85環繞著該厚度縮減 中空部分8 3環形延伸。該厚度縮減中空部分8 3的上表面水 平低於該隆起周圍部分8 5的最上面。該隆起周圍部分85係 作為焊劑障壁,使焊劑不會進入厚度縮減中空部分83内。556330 V. Description of the invention (33) The package 80 having a cavity structure includes a resin substrate g2, a semiconductor wafer 18, and a cover 84. The resin substrate 82 further includes a die pad 12 and four sets of leads 14. The resin substrate 8 2 includes a reduced thickness hollow portion 8 3 and a raised peripheral portion 85. The raised peripheral portion 85 extends annularly around the thickness-reduced hollow portion 83. The level of the upper surface of the thickness-reduced hollow portion 8 3 is lower than the uppermost portion of the raised peripheral portion 85. The raised peripheral portion 85 serves as a solder barrier so that the solder does not enter the thickness-reduced hollow portion 83.

該隆起周圍部分85環繞著隆起周圍部分83環形延伸。 a亥隆起周圍部分85包括内壁、與該内壁相對之外壁以及一 V形凹槽。該V形凹槽係在内外壁之間接合。該v形凹槽在 該内壁外側與該外壁内側延伸。該v形凹槽的平面圖呈圓 形帶狀。該V形凹槽的橫剖面圖呈v形。該v形凹槽提供與 蓋84接合之基板接合面86。 蓋84係與基板接合面86接合或黏附,該基板接合面“ 包括樹脂基板82之隆起周圍部分85的V形凹槽,因而該樹 脂基板82與蓋84共同界定容納半導體晶片18之空穴24。 忒二八亦有助於降低寄生電感。蓋84包括一碟形主體Μ與 :隆起周圍部分89,該隆起周圍部分係環繞該碟形主體87 環形延伸。該碟形主體87通常既平坦且較薄。該隆起周圍 部分89係向下且朝向樹脂基板82隆起。 一隆起周圍部分89包括内壁、與該内壁相對之外壁以及 > v形隆起,其先決條件係蓋84與樹脂基板82接合,而且 :亥内壁朝下。該v形隆起係在内外壁之間接合。該V形隆起 位於内壁外側與外壁内側U。該V形隆起的仰視圖呈圓The raised peripheral portion 85 extends annularly around the raised peripheral portion 83. The helical perimeter 85 includes an inner wall, an outer wall opposite to the inner wall, and a V-shaped groove. The V-shaped groove is joined between the inner and outer walls. The v-shaped groove extends outside the inner wall and inside the outer wall. The plan view of the V-shaped groove is a circular band. The cross section of the V-shaped groove is V-shaped. The v-shaped groove provides a substrate-engaging surface 86 to which the cover 84 is engaged. The cover 84 is bonded or adhered to the substrate bonding surface 86, which includes the V-shaped groove of the bulged surrounding portion 85 of the resin substrate 82. Therefore, the resin substrate 82 and the cover 84 jointly define the cavity 24 for receiving the semiconductor wafer 18 28 also helps to reduce parasitic inductance. The cover 84 includes a dish-shaped body M and: a raised peripheral portion 89 that extends in a ring around the dish-shaped body 87. The dish-shaped body 87 is generally flat and Thinner. The raised perimeter portion 89 is downward and bulged toward the resin substrate 82. A raised perimeter portion 89 includes an inner wall, an outer wall opposite to the inner wall, and a > v-shaped bulge, and its prerequisite is that the cover 84 is engaged with the resin substrate 82. And: the inner wall of the hay is facing down. The v-shaped ridge is connected between the inner and outer walls. The V-shaped ridge is located outside the inner wall and inside the outer wall U. The bottom view of the V-shaped ridge is round

第37頁 556330 五、發明說明(34) 形帶狀。 蓋84的V形隆起提供蓋接合面88,其與樹脂基板82之 基板接合面86對準並嚙合。蓋接合面88具有一角度,其大 體上與上述基板接合面86的角度相同,如此蓋接合面88與 基板接合面86緊密接觸並嚙合。 如詳細圖解,蓋接合面8 8的寬度比基板接合面8 6窄。 基板接合面86具有一内部延伸區,其係自蓋接合面88的内 圍,以向内且向上方向進一步延伸。假設因毛細管現象, 該焊劑一部分通過基板接合面86與蓋接合面88間之界面, 基板接合面8 6的内部延伸區使得該部分焊劑很難沿著該内 部延伸區爬升。如此確保焊劑不會進入該空穴内。 上述封裝8 0提供下列優點。 該厚 之空穴24 減,如此 安裝 平低於樹 性可以有 隆起周圍 體晶片1 8 劑障壁可 導體裝置 此外 以及所使 ,同時樹脂基板82與蓋84的高度或厚度分別縮 降低該封裝的總高度或厚度。 、 半導體晶片1 8之厚度縮減中空部分83的上表 脂基板82的隆起周圍部分85最上面。 利地避免焊劑不當地進入空穴24内。換!:構: 部分85係作為焊劑之障f,其環;: 之厚度縮減中空部分83。該 J有2 以避免焊劑進入空穴24。如此不合】二:8的焊 的電特徵與性能減弱。 4成忒封裝半 基板接合面86的V形凹槽會截腾式上 用黏合劑的過多部分,'"召住該焊劑 避免该知劑與所使用黏合Page 37 556330 V. Description of the invention (34) Band-shaped. The V-shaped ridge of the cover 84 provides a cover engaging surface 88 which is aligned with and engages with the substrate engaging surface 86 of the resin substrate 82. The cover bonding surface 88 has an angle which is substantially the same as the angle of the above-mentioned substrate bonding surface 86, so that the cover bonding surface 88 is in close contact with the substrate bonding surface 86 and is engaged. As illustrated in detail, the width of the lid bonding surface 88 is narrower than that of the substrate bonding surface 86. The substrate bonding surface 86 has an internal extension region which extends from the inside of the cover bonding surface 88 so as to further extend inward and upward. It is assumed that due to the capillary phenomenon, a part of the flux passes through the interface between the substrate bonding surface 86 and the cover bonding surface 88, and the internal extension of the substrate bonding surface 86 makes it difficult for the solder to climb along the internal extension. This ensures that the flux does not enter the cavity. The aforementioned package 80 provides the following advantages. The thickness of the cavity 24 is reduced, so the mounting level can be lower than the tree, and there can be bumps around the body wafer. The agent barrier can be a conductive device. In addition, the height and thickness of the resin substrate 82 and the cover 84 are reduced, respectively. Total height or thickness. The thickness of the semiconductor wafer 18 is reduced to the upper surface of the raised peripheral portion 85 of the upper surface of the hollow substrate 83. Advantageously, the flux is prevented from improperly entering the cavity 24. change! : Structure: The part 85 is used as the barrier f of the flux, and its ring;: The thickness is reduced to the hollow part 83. The J has 2 to prevent the flux from entering the cavity 24. So disagreeable] The electrical characteristics and performance of the 2: 8 weld are weakened. 40% of the package half of the substrate, the V-shaped groove of the substrate bonding surface 86 will intercept the excessive use of adhesive, '" hold the flux to avoid the adhesive and the adhesive used

第38頁 556330Page 556 330

劑的過多部分進入該空穴 上0 並且避免黏附在半導體晶片1 8Excessive part of the agent enters the cavity 0 and avoids sticking to the semiconductor wafer 1 8

的厚Ϊ = Ϊ性亦可以有效降低該厚度縮減中空部分 離,厘=厚度縮減中空部分83上下表面間的距 底部周:m广減中ί部分83上表面延伸至樹脂基板8: 電成:引绩1 4 “ 4長度細短。引線1 4的長度縮短會降低1 不良高=的電感降低使得容易抑制高頻半導體裝D 體晶片18的空穴24 。如此得以有效降The thickness Ϊ = Ϊ can also effectively reduce the separation of the thickness reduction hollow portion, centimeter = the distance between the upper and lower surfaces of the thickness reduction hollow portion 83 from the bottom circumference: m wide reduction middle portion 83 upper surface extends to the resin substrate 8: Introduction 1 4 "4 The length is short. Shortening the length of the lead 14 will reduce 1 Defective high = lower inductance makes it easy to suppress the holes 24 of the high-frequency semiconductor package D body wafer 18. This effectively reduces

上述結構特性可以在確保容納半導 充分空間之下,進一步降低蓋84的高度 低該封裝之總高度。 #此外’蓋接合面8 8與基板接合面8 6彼此緊密嚙合,而 且蓋f合面88與基板接合面86包括ν形隆起與ν形凹槽,其 =因蓋84本身重量之故,造成蓋84自動對準樹脂基板82的 自動對準功能。此種自動對準功能使得可以使用自動組裝 機器進行自動組裝方法,不需要任何過高之人工精確度。 上述自動對準功能使該封裝8 〇外部形狀無缺陷。該封裝8 〇 的無缺陷外部形狀使該金屬線不會產生任何不良的斷路。The above structural characteristics can further reduce the height of the cover 84 and the total height of the package while ensuring a sufficient space for accommodating the semiconductor. #Additionally, the cover joint surface 8 8 and the substrate joint surface 86 are closely meshed with each other, and the cover joint surface 88 and the substrate joint surface 86 include a ν-shaped protrusion and a ν-shaped groove, which is caused by the weight of the cover 84 itself. The cover 84 automatically aligns with the automatic alignment function of the resin substrate 82. This automatic alignment function makes it possible to use an automatic assembly machine for an automatic assembly method without any need for excessive manual precision. The automatic alignment function described above makes the package 80 free from defects in external shape. The defect-free external shape of the package 80 allows the metal wire to not cause any undesirable disconnection.

上述自動對準功能亦能用以大量製造,並改善最終產物的 產率。 此外,蓋接合面88的寬度比基板接合面86窄。基板接 合面86具有一内部延伸區,其自該蓋接合面88的内圍,以 向内且向上方向延伸。假設因毛細管現象之故,該焊劑一 部分通過基板接合面8 6與蓋接合面8 8間之界面,該基板接The automatic alignment function described above can also be used for mass production and improve the yield of the final product. The width of the lid bonding surface 88 is narrower than that of the substrate bonding surface 86. The substrate joint surface 86 has an inner extension region extending from the inner periphery of the cover joint surface 88 inwardly and upwardly. It is assumed that due to the capillary phenomenon, the flux partially passes through the interface between the substrate bonding surface 86 and the cover bonding surface 88, and the substrate bonding

第39頁 556330 五、發明說明(36) 合面86的内部延伸區使得該部分烊劑不合VL — 區以向向内方向爬井 5=1丨不曰七者該内部延伸 ㈣升。士口此讀保焊劑不會進入空穴内。 第六實 效將參考圖式詳細說明根據 — 7係根據本發明篦丄给^ v, 尽毛月之第/、貫施例。圖 内部結構橫剖面放大 的新穎封裝之 例中之封奘认丁 m占 弟/、實施例之封裝與第一實施 裝的不同處在於基板與蓋接合面。 曰η 空二結構的封裝9°包括一樹脂基板92、-半導體 :组之引:1了4二該樹脂基板92更包括一晶粒墊12與四條 盎隆起_ ® 基板92包括—厚度縮減中空部分93 中空H ^ t 該隆起周圍部分95環繞著該厚度縮減 邓刀93缞形延伸。該厚度縮減中空部分93的上表水 ΙίΐΪί起周圍部分95的最上面。該隆起周圍部分95係 為知劑障壁,使焊劑不會進入厚度縮減中空部分”内。 ^ 該隆起周圍部分95環繞著隆起周圍部分93環形延伸。 5亥隆起周圍部分95包括内壁、與該内壁相對之外壁以及一 梯形凹槽。該梯形凹槽係在内外壁之間接合。該梯形凹槽 在該内壁外側與該外壁内側延伸。該梯形凹槽的平面圖^ 圓形帶狀。該梯形凹槽的橫剖面圖呈梯形。該梯形凹槽提 供與蓋94接合之基板接合面96。 曰 作為基板接合面96的梯形凹槽更包括一向内向下傾斜 面、平坦底面與向外向下傾斜面。該向内向下傾斜面係在 外壁與平坦底面之間接合。該向内向下傾斜面位於該平坦Page 39 556330 V. Description of the invention (36) The internal extension area of the joint surface 86 makes this part of tincture not compatible with the VL — area to climb the well inward 5 = 1 丨 not seven of which the internal extension rises. This mouth protects the solder flux from entering the cavity. The sixth effect will be explained in detail with reference to the drawings. According to the 7th series, according to the present invention, the first and second embodiments of the present invention will be described. In the example of the novel package with an enlarged cross-section of the internal structure, the seal is recognized as m / z. The package of the embodiment differs from the first embodiment in the joint surface of the substrate and the cover. The package of η space 2 structure 9 ° includes a resin substrate 92, -Semiconductor: Group lead: 1 2 4 This resin substrate 92 further includes a die pad 12 and four ridges _ ® substrate 92 includes-thickness reduction hollow The portion 93 is hollow H ^ t The perimeter portion 95 of the hump extends around the thickness-reduced Deng knife 93 in a U-shape. The upper surface water of the thickness-reduced hollow portion 93 rises to the top of the surrounding portion 95. The perimeter portion 95 of the hump is a barrier for the flux so that the flux does not enter the thickness-reduced hollow portion. ^ The perimeter portion 95 of the hump extends annularly around the perimeter portion 93 of the hump. Opposite the outer wall and a trapezoidal groove. The trapezoidal groove is joined between the inner and outer walls. The trapezoidal groove extends outside the inner wall and the inner wall of the outer wall. The plan view of the trapezoidal groove is a circular band. The trapezoidal groove The cross-sectional view of the groove is trapezoidal. The trapezoidal groove provides a substrate joint surface 96 that is engaged with the cover 94. The trapezoidal groove as the substrate joint surface 96 further includes an inwardly inclined surface, a flat bottom surface, and an outwardly downwardly inclined surface. The inward downward slope is joined between the outer wall and the flat bottom surface. The inward downward slope is located on the flat surface

第40頁 556330 五、發明說明(37) 底面外侧與外壁内側之間。該向内向下傾斜面具有一均句 傾斜角度。該平坦底面係在該向内向下傾斜面與該向外向 下傾斜面之間接合。該平坦底面位於該向外向下傾斜面外 侧與該向内向下傾斜面内側之間。該平坦底面具有一水平 面。該向外向下傾斜面在内壁與平坦底面之間接合。該向 外向下傾斜面位於該平坦底面内侧與該内壁外側之間。該 $外向下傾斜面具有一均勻傾斜角度。該向内向下傾斜面 提供第一基板接合面96a。該平坦底面提供第二基板接合 面96b。該向外向下傾斜面提供第三基板接合面96ε。上述Page 40 556330 V. Description of the invention (37) Between the outside of the bottom surface and the inside of the outer wall. The inward tilting mask has a uniform tilt angle. The flat bottom surface is joined between the inwardly downwardly inclined surface and the outwardly downwardly inclined surface. The flat bottom surface is located between the outside of the outwardly downwardly inclined surface and the inside of the inwardly downwardly inclined surface. The flat bottom mask has a horizontal plane. The outwardly sloping surface engages between the inner wall and the flat bottom surface. The outward downward slope is located between the inside of the flat bottom surface and the outside of the inner wall. The $ outside tilting mask has a uniform tilting angle. This inwardly and downwardly inclined surface provides a first substrate bonding surface 96a. This flat bottom surface provides a second substrate bonding surface 96b. The outwardly downwardly inclined surface provides a third substrate bonding surface 96ε. Above

基板接合面96更包括第一至第三基板接合面96&、96b盥 96c。 ’、 f 94係與基板接合面96接合或黏附,該基板接合面96 ^括樹脂基板92之隆起周圍部分95的梯形凹槽,因而該樹 =基板92與蓋94共同界定容納半導體晶片18之空穴24。該 空穴亦有助於降低寄生電感。蓋94包括一碟形主體97與一 隆起周圍部分99,該隆起周圍部分係環繞該碟形主體97環 开=延伸。該碟形主體97通常既平坦且較薄。該隆起周圍部 分99係向下且朝向樹脂基板92隆起。 隆起周圍部分99包括内壁、與該内壁相對之外壁以及 f梯f隆起,其先決條件係蓋94與樹脂基板92接合,而且 該内壁朝下。該梯形隆起係在内外壁之間接合。該梯形隆 起位於内壁外侧與外壁内側之間。該梯形隆起的仰視圖呈 圓形帶狀。 蓋94的梯形隆起提供蓋接合面98,其與樹脂基板”之The substrate bonding surface 96 further includes first to third substrate bonding surfaces 96 &, 96b and 96c. ', F 94 is bonded or adhered to the substrate bonding surface 96, which includes the trapezoidal groove of the bulging surrounding portion 95 of the resin substrate 92, so the tree = the substrate 92 and the cover 94 together define the space for accommodating the semiconductor wafer 18.孔 24。 24 holes. This hole also helps reduce parasitic inductance. The cover 94 includes a dish-shaped body 97 and a raised peripheral portion 99, and the raised peripheral portion is looped = extended around the dish-shaped body 97. The dish-shaped body 97 is generally both flat and thin. The bulging peripheral portion 99 is bulged downward and toward the resin substrate 92. The bulging peripheral portion 99 includes an inner wall, an outer wall opposite to the inner wall, and a f-step f bulge, and its precondition is that the cover 94 is joined to the resin substrate 92 with the inner wall facing downward. The trapezoidal ridges are joined between the inner and outer walls. The trapezoidal ridge is located between the outside of the inner wall and the inside of the outer wall. The bottom view of the trapezoidal hump is a circular band. The trapezoidal elevation of the cover 94 provides a cover joint surface 98, which is in contact with the resin substrate "

556330 五、發明說明(38) 基板接合面96對準並嚙合。蓋接合面98具有一角度,其大 體上與上述基板接合面96的角度相同,如此蓋接合面98與 基板接合面96緊密接觸並嚙合。 作為蓋接合面98的梯形隆起更包括一向内向下傾斜 面、一平坦底面與一向外向下傾斜面。該向内向下傾斜面 係在外壁與平坦底面之間接合。該向内向下傾斜面位於該 平坦底面外侧與外壁内侧之間。該向内向下傾斜面具有一 均勻傾斜角度,該傾斜角度與梯形凹槽9 6之向内向下傾 斜面相同。該平坦底面係在該向内向下傾斜面與該向外向 下傾斜面之間接合。該平坦底面位於該向外向下傾斜面外 側與該向内向下傾斜面内侧之間。該平坦底面具有一水平 面。該向外向下傾斜面在内壁與平坦底面之間接合。該向 外向下傾斜面位於該平坦底面内側與該内壁外側之間。該 向外向下傾斜面具有一均勻傾斜角度,其與梯形凹槽9 6之 傾斜角度相同。該向内向下傾斜面提供第一蓋接合面 98a。該平坦底面提供第二蓋接合面98b。該向外向下傾斜 面提供第三蓋接合面98c。上述蓋接合面98更包括第一至 第三蓋接合面98a、9 8b與98c。該第一蓋接合面98a係與第 一基板接合面96a嚙合。第二蓋接合面98b係與第二基板接 合面96b嚙合。第三蓋接合面98c係與第三基板接合面96c 喃合。 如詳細圖解,蓋接合面98的寬度比基板接合面9 6窄。 基板接合面96具有一内部延伸區,其係自蓋接合面98的内 圍,以向内且向上方向進一步延伸。假設因毛細管現象,556330 V. Description of the invention (38) The substrate joint surface 96 is aligned and engaged. The cover bonding surface 98 has an angle which is substantially the same as the angle of the above-mentioned substrate bonding surface 96, so that the cover bonding surface 98 is in close contact with the substrate bonding surface 96 and engages. The trapezoidal protrusion as the cover engaging surface 98 further includes an inwardly inclined surface, a flat bottom surface, and an outwardly inclined surface. The inwardly and downwardly inclined surface joins between the outer wall and the flat bottom surface. The inward downward slope is located between the outside of the flat bottom surface and the inside of the outer wall. The inwardly and downwardly inclined mask has a uniform inclination angle, which is the same as the inwardly and downwardly inclined surface of the trapezoidal groove 96. The flat bottom surface is joined between the inwardly downwardly inclined surface and the outwardly downwardly inclined surface. The flat bottom surface is located between the outside of the outwardly downwardly inclined surface and the inside of the inwardly downwardly inclined surface. The flat bottom mask has a horizontal plane. The outwardly sloping surface engages between the inner wall and the flat bottom surface. The outward downward slope is located between the inside of the flat bottom surface and the outside of the inner wall. The tilting mask outwardly and downwardly has a uniform tilting angle, which is the same as the tilting angle of the trapezoidal groove 96. This inwardly and downwardly inclined surface provides a first cover engaging surface 98a. This flat bottom surface provides a second cover engaging surface 98b. The outwardly downwardly sloping surface provides a third cover engaging surface 98c. The cover engaging surface 98 further includes first to third cover engaging surfaces 98a, 98b, and 98c. The first cover joint surface 98a is engaged with the first substrate joint surface 96a. The second cover joint surface 98b is engaged with the second substrate joint surface 96b. The third cover bonding surface 98c is coupled to the third substrate bonding surface 96c. As illustrated in detail, the width of the lid bonding surface 98 is narrower than the substrate bonding surface 96. The substrate bonding surface 96 has an internal extension region which extends from the inside of the cover bonding surface 98 to extend inwardly and upwardly. Suppose that due to capillary phenomena,

556330 五、發明說明(39) 该焊劑一部分通過基板接合面9 基板接合面96的内部延伸區使接合面98間之界面’ 部延伸區㈣。如此確保4=分焊劑很難沿著該内 上述封裝90提供下列;:不會進入該空穴内。 該厚度縮減中空部分9 3右#认^ 之空穴24,同時樹脂基板92與蓋$:::5晶片」8 減,如此降低該封裝的總高度或厚度二又5 ?刀別縮 安襄半導體晶片18之厚声給、、士 a ^ 平低於樹脂基板92的隆起周旱i = 性可以有利地避免焊劑不當地進人空穴24内。換士 =^ 圍部广95係作為焊劑之障·,其環繞著安“半; :::18之厚度縮減中空部分93。該隆起周圍部分: 口:二;免焊劑進入空穴24。如此不會造成該封裝ί 導體破置的電特徵與性能減弱。 干 1及2 I ’基板接合面96的梯形凹槽會截獲或留住該焊劑 = = =部免該焊劑與所使用= 上。 進亥二八,並且避免黏附在半導體晶片1 8 ^述結構特性亦可以有效降低該厚度缩減中空部分9 3 Ϊ,二1因此縮短厚度縮減中空部分93上下表面間的距 ㈣周Ξ自厚度縮減中空部分93上表面延伸至樹脂基㈣ 愈Υ之引線1 4長度縮短。引線1 4的長度縮短會降低其 ^ ^引線1 4的電感降低使得容易抑制高頻半導體 不艮向頻損失。 第43頁 556330556330 V. Description of the invention (39) A part of the flux passes through the internal extension area of the substrate joining surface 9 and the substrate joining surface 96 so that the interface between the joining surfaces 98 is partially extended. This ensures that 4 = it is difficult for the sub-flux to provide the following along the above package 90; it will not enter the cavity. The thickness of the hollow portion 9 3 is reduced to the right 24, while the resin substrate 92 and the cover $ ::: 5 are reduced by 8 ”, so that the total height or thickness of the package is reduced by 2 to 5 mm. The thickness of the semiconductor wafer 18 is lower than the height of the resin substrate 92, which can prevent the flux from entering the cavity 24 improperly. Changshi = ^ Weibu Guang 95 is used as a barrier to the flux, which surrounds the thickness of the "half; ::: 18 to reduce the hollow portion 93. The surrounding part of the bulge: Mouth: two; flux-free into the cavity 24. So It will not cause the electrical characteristics and performance of the package to be broken. The trapezoidal grooves of the dry 1 and 2 I 'substrate junction surface 96 will intercept or retain the flux = = = part of the flux and used = on. It can also reduce the thickness of the hollow portion 9 3 Ϊ, which can effectively reduce the thickness of the hollow portion 9 3 述, and avoid the adhesion to the semiconductor wafer 1 8 ^ The structural characteristics can also reduce the distance between the upper and lower surfaces of the hollow portion 93. Reducing the length of the upper surface of the hollow portion 93 extending to the resin-based lead wire 14 is shortened. The shortened length of the lead wire 14 will reduce its ^^ The reduction in the inductance of the lead wire 14 makes it easy to suppress the high frequency semiconductor loss. Page 43 556330

上述結構特性可以在確保容納 充分空間之下,進一步降低蓋94的 低該封裝之總高度。 半導 古危 體晶片18的空穴24 。如此得以有效降 此外 且蓋接合 槽,其中 板92的自 動組裝機 確度。上 封裝9 0的 斷路。上 產物的產 面98 Ϊ:面98與基板接合面96彼此緊密嚙合,而 =2板接ΐ面96包括梯形隆起與梯形凹 動餅it本身重*之故,造成蓋94自動對準樹脂基 ,對準功能。此種自動對準功能使得可以使用自The above-mentioned structural characteristics can further reduce the overall height of the package 94 lower than the package 94 while ensuring sufficient space for accommodation. Cavities 24 of the semiconducting ancient body wafer 18. This effectively reduces the accuracy of the cover assembly slot, of which the plate 92 is automatically assembled. Open circuit on package 90. The production surface 98 of the above product: The surface 98 and the substrate joint surface 96 are closely meshed with each other, and the = 2 plate connection surface 96 includes a trapezoidal ridge and a trapezoidal concave moving cake. It is heavy *, which causes the cover 94 to automatically align with the resin base , Alignment function. This automatic alignment function makes it possible to use

器進行自動組裝方法,不需要任何過高之人工精 述自動對準功能使該封裝9 〇外部形狀無缺陷。該 無缺陷外部形狀使該金屬線不會產生任何不良的 述自動對準功能亦能用以大量製造,並改善最終 率。 此外’蓋接合面98的寬度比基板接合面96窄。基板接 合面96具有一内部延伸區,其自該蓋接合面98的内圍,以 向内且向上方向延伸。假設因毛細管現象之故,該焊劑一 部分通過基板接合面9 6與蓋接合面9 8間之界面,該基板接 合面9 6的内部延伸區使得該部分焊劑不會沿著該内部延伸 區以向向内方向爬升。如此確保焊劑不會進入空穴内。The automatic assembly method of the device does not require any overly manual manual elaboration of the automatic alignment function, so that the package 90 has no defect in the external shape. The non-defective external shape enables the metal wire to be produced without any undesirable features. The auto-alignment function can also be used for mass production and improve the final rate. In addition, the width of the lid joint surface 98 is narrower than that of the substrate joint surface 96. The substrate joint surface 96 has an inner extension region extending from the inner periphery of the cover joint surface 98 inwardly and upwardly. It is assumed that due to the capillary phenomenon, a part of the flux passes through the interface between the substrate bonding surface 96 and the cover bonding surface 98, and the internal extension area of the substrate bonding surface 96 prevents the part of the flux from going along the internal extension area to the Climb inward. This ensures that the flux does not enter the cavity.

此外,該第二基板接合面96b與第二蓋接合面98b之組 合使得容易在第二基板接合面96b與第二蓋接合面98b至少 一者上塗覆黏合劑,以接合蓋94與樹脂基板92。如此有助 於改善封裝9 0之生產性。 第七實施例:In addition, the combination of the second substrate bonding surface 96b and the second cover bonding surface 98b makes it easy to apply an adhesive to at least one of the second substrate bonding surface 96b and the second cover bonding surface 98b to bond the cover 94 and the resin substrate 92. . This helps to improve the productivity of the package 90. Seventh embodiment:

第44頁 556330Page 556 330

^兹將參考圖式詳細說明根據本發明之第七實施例。圖 8係根據本發明第七實施例之具有空穴結構的新穎封裝之 内部結構横剖面放大圖。此第七實施例之封裝與第一實施 例中之封裝的不同處在於基板與蓋接合面。A seventh embodiment according to the present invention will be described in detail with reference to the drawings. Fig. 8 is an enlarged cross-sectional view of the internal structure of a novel package having a cavity structure according to a seventh embodiment of the present invention. The difference between the package of the seventh embodiment and the package of the first embodiment is the joint surface of the substrate and the cover.

、 具有空穴結構的封裝1 0 0包括一樹脂基板1 〇 2、一半 導體晶片18與一蓋1〇4。該樹脂基板丨〇2更包括一晶粒墊12 t四條一組之引線14。該樹脂基板丨02包括一厚度縮減中 =邓为103與隆起周圍部分1〇5。該隆起周圍部分1〇5環繞 f。亥厚度縮減中空部分1 〇 3環形延伸。該厚度縮減中空部 分103的上表面水平低於該隆起周圍部分1〇5的最上面。該 隆起周圍部分1 05係作為焊劑障壁,使焊劑不會進入厚度 縮減中空部分1 〇 3内。 該隆起周圍部分105環繞著隆起周圍部分1〇3環形延 伸4,起周圍部分1 〇 5包括内壁、與該内壁相對之外壁 以及圓形隆起。該圓形隆起在内外壁之間接合。該圓形 隆起位於内壁外側與外壁内側之間 J = …的橫剖面圖呈梹形。該圓形隆起 k供與蓋104接合用之基板接合面1〇6。 10R勺蓋二基板接合面106接合或黏附,該基板接合面 而^"樹/美H板102之隆起周圍部分105的圓形隆起,因 Κ Ϊί!?與蓋104共同界定容納半導體晶片18之空 寄電4。蓋104包括-碟形 主體107與一隆起周圍部分1〇9 ^ 07 〇 i ^ ^ ^ ^ ^ ^ τ邊释形主體107通常既平坦且較A package 100 having a cavity structure includes a resin substrate 102, a half of the conductor wafer 18, and a cover 104. The resin substrate 002 further includes a die pad 12 t and four sets of leads 14. The resin substrate 02 includes a thickness reduction medium = Deng Wei 103 and a portion around the bulge 105. The perimeter of the hump 105 surrounds f. The thickness of the hollow portion is reduced to 103 in a ring shape. The upper surface level of the thickness-reduced hollow portion 103 is lower than the uppermost portion of the raised peripheral portion 105. The perimeter of the bulge 105 serves as a solder barrier so that the solder does not enter the thickness-reduced hollow portion 103. The raised peripheral portion 105 surrounds the raised peripheral portion 103 in an annular extension 4, and the raised peripheral portion 105 includes an inner wall, an outer wall opposite to the inner wall, and a circular raised portion. The circular bulge is joined between the inner and outer walls. The circular bulge is located between the outside of the inner wall and the inside of the outer wall. The cross section of J = ... is 梹 -shaped. The circular bump k is a substrate bonding surface 106 for bonding to the lid 104. The 10R spoon lid has a substrate joint surface 106 that is bonded or adhered. The substrate joint surface is a round bulge of the perimeter 105 of the ridge of the tree / beauty H plate 102. Because of the joint definition with the cover 104, the semiconductor wafer 18 is contained. Zhikong Post 4. The cover 104 includes a dish-shaped body 107 and a raised peripheral portion 109 ^ 07 〇 i ^ ^ ^ ^ ^ ^ The side-release body 107 is generally flat and relatively flat.

556330 五、發明說明(42) 薄。該隆起周圍部分1 〇 9係向下且朝向樹脂基板1 〇 2隆起。 凹槽周圍部分109包括内壁、與該内壁相對之外壁以 及一圓形凹槽,其先決條件係蓋1〇4與樹脂基板丨〇2接合, 而且該内壁朝下。該圓形凹槽係在内外壁之間接合。該圓 形凹槽位於内壁外側與外壁内側之間。該圓形凹槽的仰視 圖呈圓形帶狀。 蓋1 0 4的圓形凹槽提供蓋接合面丨〇 8,其與樹脂基板 102之基板接合面1〇6對準並嚙合。蓋接合面1〇8具有一曲 2,其大體上與上述基板接合面106的中央區相同,如此 蓋接^面1 08與基板接合面1 〇6緊密接觸並嚙合。如詳細圖 解,蓋接合面108的寬度比基板接合面1〇6窄。基板 ⑽具有-内部延伸區,其係自蓋接合“= 内且向下方向進一步延伸。 上述封裝1 0 0提供下列優點。 β亥厚度縮減中空部分103有助於形成容納半導體晶片 m ’同時樹脂基板m與蓋104的高度或厚度分別 鈿減丄如此降低該封裝的總高度或厚度。 又刀 安裝半導體晶片18之厚度縮減中空部分1〇 樹:基咖的隆起周圍部分m最上面表面 構特性可以有利地避免焊劑不當地進入空穴24内。拖ί π为干导體日日片1 8之厚度縮減中空部 部分m的焊劑障壁可以避免焊劑進二:周圍 造成該封裝半導體裝置的電特徵與性能如此不會556330 V. Description of the invention (42) Thin. The bulging peripheral portion 109 is bulged downward and toward the resin substrate 102. The peripheral portion 109 of the groove includes an inner wall, an outer wall opposite to the inner wall, and a circular groove. The prerequisite is that the cover 104 is engaged with the resin substrate 1002, and the inner wall faces downward. The circular groove is joined between the inner and outer walls. The circular groove is located between the outside of the inner wall and the inside of the outer wall. The bottom view of the circular groove is a circular band. The circular groove of the cover 104 provides a cover joint surface 08, which is aligned with and engages with the substrate joint surface 106 of the resin substrate 102. The cover joint surface 108 has a curve 2 which is substantially the same as the central region of the above-mentioned substrate joint surface 106, so that the cover joint surface 08 and the substrate joint surface 106 are in close contact and mesh with each other. As illustrated in detail, the width of the lid joint surface 108 is narrower than the substrate joint surface 106. The substrate ⑽ has an internal extension region, which is further extended from the inside of the cover to the inside. The above package 100 provides the following advantages. The β-thickness reduction of the hollow portion 103 contributes to the formation of the resin accommodating the semiconductor wafer m ′ and the resin The height or thickness of the substrate m and the cover 104 are reduced, respectively, so that the overall height or thickness of the package is reduced. The thickness of the semiconductor wafer 18 is reduced, and the hollow portion 10 is reduced. It can be advantageously avoided that the flux improperly enters the cavity 24. Dragging π is the thickness of the dry conductor plate 18 and reducing the solder barrier of the hollow portion m can prevent the flux from entering the second: the electrical characteristics of the packaged semiconductor device caused by the surrounding With performance so not

556330 五、發明說明(43) 上述j吉構特性亦可以有效降低該厚度縮減中空部分 103的厚度’因此縮短厚度縮減中空部分1〇3上下表面間的 距離,使得自厚度縮減中空部分1〇3上表面延伸至樹脂基 板1〇2底部周圍之引線14長度縮短。引線14的長度縮短會 3 :引線1 4的電感降低使得容易抑制高頻半導體 裝置的不良尚頻損失。 晶片18的空穴24 如此得以有效 上述結構特性可以在確保容納半導體 充分空間之下’進一步降低蓋丨〇4的高度。 降低該封裝之總高度。556330 V. Description of the invention (43) The above-mentioned j-structure characteristics can also effectively reduce the thickness of the thickness-reduced hollow portion 103 '. Therefore, the distance between the upper and lower surfaces of the thickness-reduced hollow portion 103 is shortened, and the thickness-reduced hollow portion 103 is reduced. The length of the lead 14 extending from the upper surface to the periphery of the bottom of the resin substrate 102 is shortened. The shortening of the length of the lead wire 14 leads to a reduction in the inductance of the lead wire 14 and makes it easy to suppress the low frequency loss of the high-frequency semiconductor device. The cavity 24 of the wafer 18 is thus effective. The above structural characteristics can further reduce the height of the cover 04 while ensuring a sufficient space to accommodate the semiconductor. Reduce the overall height of the package.

,外,蓋接合面1 〇 8與基板接合面丨〇 6彼此緊密嚙合, 而且蓋接合面108與基板接合面1〇6包括圓形凹槽與圓形隆 起其中因蓋本身重量之故,造成蓋丨〇4自動對準樹脂 基板1 0 2的自動對準功能。此種自動對準功能使得可以使 用自動組裝機器進行自動組裝方法,不需要任何過高之人 t精確度。上述自動對準功能使該封裝丨〇 〇外部形狀無缺 陷。該封裝1 00的無缺陷外部形狀使該金屬線不會產生任 何不良的斷路。上述自動對準功能亦能用以大量製造,並 改善最終產物的產率。 篇八實施 y兹將參考圖式詳細說明根據本發明之第八實施例。圖 9係4根據本發明第八實施例之具有空穴結構的新穎封裝之 内部結構橫剖面放大圖。此第八實施例之封裝與第一實施 例中之封裝的不同處在於基板與蓋接合面。In addition, the lid joint surface 108 and the substrate joint surface 106 are closely meshed with each other, and the lid joint surface 108 and the substrate joint surface 106 include circular grooves and circular bulges, which are caused by the weight of the lid itself. Cover 丨 〇4 Automatic alignment function of resin substrate 102. This automatic alignment function makes it possible to use an automatic assembly machine for an automatic assembly method, without requiring any excessively high human accuracy. The above-mentioned automatic alignment function makes the package shape free of defects. The defect-free external shape of the package 100 prevents the metal wire from causing any undesirable disconnection. The automatic alignment function described above can also be used for mass production and improve the yield of the final product. Chapter Eight Implementation The eighth embodiment according to the present invention will be described in detail with reference to the drawings. Fig. 9 is an enlarged cross-sectional view of the internal structure of a novel package having a cavity structure according to an eighth embodiment of the present invention. The difference between the package of the eighth embodiment and the package of the first embodiment is the joint surface of the substrate and the cover.

556330 五、發明說明(44) 具有空穴結構的封裝1 1 〇包括一樹脂基板1 1 2、一半導 體晶片18與一蓋114。該樹脂基板112更包括一晶粒塾12與 四條一組之引線14。該樹脂基板112包括一厚度縮減中办" 部分113與隆起周圍部分115。該隆起周圍部分115環繞^ 該厚度縮減中空部分1 1 3環形延伸。該厚度縮減中空部分 113的上表面水平低於該隆起周圍部分115的最上面隆 起周圍部分11 5係作為焊劑障壁,使焊劑不會進入厚声 減中空部分113内。 n 該隆起周圍部分11 5環繞著隆起周圍部分丨丨3環形延 伸。該隆起周圍部分115包括.内壁、與該内壁相對之外壁 以及一v形隆起。該v形隆起係在内外壁之間接合。該v形 隆起位於該内壁外側與該外壁内側之間。該V形隆起的平^ 面圖呈圓形帶狀。該V形隆起的橫剖面圖呈V形。該v形 起提供與蓋114接合之基板接合面116。 蓋11 4係與基板接合面1丨6接合或黏附,該基板接合 116包括樹脂基板112之隆起周圍部分115的¥形凹槽,= 該樹脂基板112與蓋114共同界定容納半導體晶片18之* ^ 24。該空穴亦有助於降低寄生電感。蓋114包括一碟形=八 體U 7與-隆起周圍部分! ! 9,該隆起周圍部分係環繞 形主體117環形延伸。該碟形主體117通常既平坦且較,、 該隆起周圍部分119係向下且朝向樹脂基板112隆起。/ 。 凹槽周圍部分11 9包括内壁、與該内壁相對之外壁 及一v形凹槽,其先決條件係蓋114與樹脂基板丨12接合, 556330 五、發明說明(45) 而且該内壁朝下。該V形凹槽係在内外壁之間接合。該v形 凹槽位於内壁外側與外壁内側之間。該V形凹槽的仰視圖 呈圓形帶狀。 蓋1 1 4的V形隆起提供蓋接合面1 1 8,其與樹脂基板丨】2 之基板接合面116對準並嚙合。蓋接合面118具有一角度, 其大體上與上述基板接合面116的中央區相同,如此蓋接 ^面1 1 8與基板接合面丨丨6緊密接觸並嚙合。如詳細圖解, 蓋接合面118的寬度比基板接合面116窄。基板接合面116 具有一内部延伸區,其係自蓋接合面118的内圍,以向内 且向下方向進一步延伸。 上述封裝1 1 〇提供下列優點。 0亥厚度鈿減中空部分113有助於形成容納半導體晶片 空穴24,同時樹脂基板112與蓋114的高度或厚度分別 縮減丄如此降低該封裝的總高度或厚度。 ,裝半導體晶片18之厚度縮減中空部分113的上表面 L=樹脂基板1 1 2的隆起周圍部分1 1 5最上面。此種結 構特f可以有利地避免焊劑不當地進入空穴24内。換言 F有ί ^ ^圍部分11 5係作為焊劑之障壁,其環繞著安 ^分m 曰ti片18之厚度縮減中空部分113。該隆起周圍 造=Λ 壁可以避免焊劑進入空穴24。如此不會 ;半導體裝置的電特徵與性能減弱。 in的//構特性亦可以有效降低該厚度縮減中空部分 距離,使^自因短/度縮減中空部分113上下表面間的 又^減中空部分11 3上表面延伸至樹脂基556330 V. Description of the invention (44) The package 1 1 0 having a cavity structure includes a resin substrate 1 1 2, a half of the semiconductor wafer 18 and a cover 114. The resin substrate 112 further includes a crystal grain 12 and four sets of leads 14. The resin substrate 112 includes a thickness reduction central office portion 113 and a raised peripheral portion 115. The raised peripheral portion 115 surrounds the thickness-reduced hollow portion 1 1 3 and extends in a ring shape. The level of the upper surface of the thickness-reduced hollow portion 113 is lower than that of the uppermost bulge-peripheral portion 115 of the bulge-surrounding portion 115 as a flux barrier, so that the flux does not enter the thick-reduction hollow portion 113. n The perimeter of the ridge 11 5 extends in a ring shape around the perimeter of the ridge 3. The raised peripheral portion 115 includes an inner wall, an outer wall opposite to the inner wall, and a V-shaped raised. The v-shaped ridges are joined between the inner and outer walls. The v-shaped ridge is located between the outside of the inner wall and the inside of the outer wall. The plan view of the V-shaped hump is a circular band. The cross section of the V-shaped hump is V-shaped. The v-shape provides a substrate bonding surface 116 to which the cover 114 is bonded. The cover 11 4 is bonded or adhered to the substrate joint surface 1 丨 6, and the substrate joint 116 includes a ¥ -shaped groove of the bulging and surrounding portion 115 of the resin substrate 112. The resin substrate 112 and the cover 114 jointly define a space for accommodating the semiconductor wafer 18 * ^ 24. This hole also helps reduce parasitic inductance. The cover 114 includes a dish-shaped = eight-body U 7 and a bulging surrounding portion! !! 9. The perimeter of the hump extends annularly around the main body 117. The dish-shaped body 117 is generally flat and relatively flat, and the raised peripheral portion 119 is raised downward toward the resin substrate 112. /. The groove surrounding part 119 includes an inner wall, an outer wall opposite to the inner wall, and a v-shaped groove. The prerequisite is that the cover 114 is joined to the resin substrate 556. 5. Description of the invention (45) and the inner wall faces downward. The V-shaped groove is joined between the inner and outer walls. The v-shaped groove is located between the outside of the inner wall and the inside of the outer wall. The bottom view of the V-shaped groove is a circular band. The V-shaped ridge of the cover 1 1 4 provides a cover joint surface 1 1 8 which is aligned with and engages with the substrate joint surface 116 of the resin substrate 丨] 2. The cover bonding surface 118 has an angle which is substantially the same as the central region of the above-mentioned substrate bonding surface 116, so that the cover bonding surface 1 1 8 is in close contact with and meshes with the substrate bonding surface 丨 6. As illustrated in detail, the width of the lid bonding surface 118 is narrower than that of the substrate bonding surface 116. The substrate bonding surface 116 has an internal extension region extending from the inner periphery of the cover bonding surface 118 to extend inwardly and downwardly. The above package 1 10 provides the following advantages. The thickness of the hollow portion 113 is reduced to help form the cavity 24 for accommodating the semiconductor wafer, and the height or thickness of the resin substrate 112 and the cover 114 are reduced, thereby reducing the total height or thickness of the package. The upper surface of the hollow portion 113 in which the thickness of the semiconductor wafer 18 is reduced L = the raised peripheral portion 1 1 5 of the resin substrate 1 1 2 is the uppermost. Such a structure can advantageously prevent the flux from improperly entering the cavity 24. In other words, F has the surrounding portion 11 5 as a barrier of the flux, which surrounds the thickness of the thin portion 18 and reduces the hollow portion 113. The formation of a wall around the bump prevents the flux from entering the cavity 24. This is not the case; the electrical characteristics and performance of semiconductor devices are reduced. The in // structural properties of in can also effectively reduce the thickness and reduce the distance of the hollow portion, so that the distance between the upper and lower surfaces of the hollow portion 113 is shortened due to the shortness / degree, and the upper surface of the hollow portion 113 is extended to the resin base.

五、發明說明(46) ί;二底雷部:Λ之引線14長度縮短。引線“的長度縮短會 裝置的“高m4的電感降低使得容易抑制高頻半導體 充八ΐ ί結構特性可以在確保容納半導體晶川的空穴24 = ΐ下1進一步降低蓋114的高度。如此得以有效 降低该封裝之總高度。 此卜蓋接合面118與基板接合面11 6彼此緊密嚙合, :且==118與基”合面116包括ν形凹槽與¥形隆 Α柘2的白盖2 14本身重I之故’ *成蓋11 4自動對準樹脂 土板㈣動對準功能。此種自動對準功 用^裝機器進行自動組裝方法1需要任何過高之使人 工精確度。上述自動對準功能使該封裝11〇外部形狀無缺 陷。§亥封裝11 0的無缺陷外部形狀使該金屬線不會產生任 。上述自動對準功能亦能用以大量製造,並 改善最終產物的產率。 雖然前文以數個較佳實施 等實施例僅用以說明本發明, 案之後’熟悉本技術者很容易 變更,皆屬本發明隨附之申請 例描述本發明,但需明白此 其無限制意義。閱讀本申請 明白凡依本發明所做的任何 專利範圍之内。 556330 圖式簡單說明 圖1係根據本發明第一實施例之具有空穴結構的新穎 封裝之内部結構橫剖面放大圖。 圖2係圖1所示之具有$穴結構的新賴封裝之平面圖£ 圖3係根據本發明第二實施例之具 封裝之内部結構橫Μ放。 ^ 圖4係根據本發明第三實施例之具有空穴結構 封裝之内部結構橫剖面放大圖。 、 圖5係根據本發明第四實施例之具有空穴結構 封裝之内部結構橫剖面放大圖。 圖6係根據本發明第五實施例之具有空穴結構的新穎 封裝之内部結構橫剖面放大圖。 、 圖7係根據本發明第六實施例之具有空穴結構的新穎 封裝之内部結構橫剖面放大圖。 圖8係根據本發明第七實施例之具有空穴結構的新穎 封裝之内部結構橫剖面放大圖。 圖9係根據本發明第八實施例之具有空穴結構的新穎 封裝之内部結構橫剖面放大圖。V. Description of the invention (46) ί; Second bottom mine: The lead 14 of Λ is shortened in length. The shortening of the length of the lead wire will reduce the inductance of the device with a high m4, which makes it easy to suppress high-frequency semiconductor charging. The structural characteristics can further reduce the height of the cover 114 while ensuring that the cavity of the semiconductor wafer is 24 = ΐ1. This effectively reduces the overall height of the package. This cover-engaging surface 118 and the substrate-engaging surface 11 6 are closely meshed with each other, and: == 118 and the base "combining surface 116 includes a v-shaped groove and a white cover 2 of the shape-shaped Α 2 2 which weighs I ' * Cover 11 4 Automatic alignment function for automatic alignment of the resin clay plate. This automatic alignment function ^ The machine for automatic assembly method 1 requires any manual accuracy that is too high. The above automatic alignment function makes the package 11 〇The external shape is defect-free. § The package's 110-dimensional defect-free external shape prevents the metal wire from producing any defects. The above-mentioned automatic alignment function can also be used for large-scale manufacturing and improve the yield of the final product. Examples such as the preferred implementation are only used to illustrate the present invention. After the case, 'familiar persons skilled in the art can easily change it, which is an application example accompanying the present invention to describe the present invention, but it must be understood that it has no limitative meaning. Read this application to understand It is within the scope of any patent made in accordance with the present invention. 556330 Brief Description of Drawings Figure 1 is an enlarged cross-sectional view of the internal structure of a novel package with a cavity structure according to the first embodiment of the present invention. Show Figure 3 is a plan view of a newly constructed package. Figure 3 is a cross-section of an internal structure with a package according to a second embodiment of the present invention. Figure 4 is a cross-section of the internal structure of a package with a cavity structure according to a third embodiment of the present invention. Enlarged view. Fig. 5 is an enlarged cross-sectional view of the internal structure of a package with a cavity structure according to a fourth embodiment of the present invention. Fig. 6 is a cross-sectional view of the internal structure of a novel package with a cavity structure according to a fifth embodiment of the present invention. 7 is an enlarged cross-sectional view of an internal structure of a novel package having a cavity structure according to a sixth embodiment of the present invention. FIG. 8 is a diagram of a novel package having a cavity structure according to a seventh embodiment of the present invention. Cross-sectional enlarged view of the internal structure. FIG. 9 is an enlarged cross-sectional view of the internal structure of a novel package having a cavity structure according to an eighth embodiment of the present invention.

【符號說明】 10 封裴 10 0 封裝 102 樹脂基板 10 3中空部分 104 蓋[Notation] 10 seals 10 0 packages 102 resin substrates 10 3 hollow parts 104 covers

第51頁 556330 圖式簡單說明 105 隆起周圍部分 106 基板接合面 107 碟形主體 108 蓋接合面 109 周圍部分 110 封裝 112 樹脂基板 113 中空部分 114 蓋 115 隆起周圍部分 116 基板接合面 117 碟形主體 118 蓋接合面 119 周圍部分 12 晶粒墊 14 引線 16 基板 18 半導體晶片 20 蓋 21 中空部分 22 隆起周圍部分 23 碟形主體 24 空六 25 隆起周圍部分P.51 556330 Brief description of drawings 105 Raised peripheral part 106 Substrate joint surface 107 Dish-shaped body 108 Cover joint surface 109 Peripheral section 110 Package 112 Resin substrate 113 Hollow section 114 Cover 115 Raised peripheral section 116 Substrate joint surface 117 Dish-shaped body 118 Cover joint surface 119 Peripheral part 12 Die pad 14 Lead 16 Substrate 18 Semiconductor wafer 20 Cover 21 Hollow part 22 Raised peripheral part 23 Dish-shaped body 24 Air-six 25 Raised peripheral part

第52頁 556330 圖式簡單說明 26 蓋接合面 2 8 接合面 3 0 上露出表面 32 下露出表面 40 封裝 42 樹脂基板 43 中空部分 44 蓋 45 隆起周圍部分 46 第一基板接合面 47 碟形主體 48 第二基板接合面 49 隆起周圍部分 50 第一蓋接合面 52 第二蓋接合面 60 封裝 62 樹脂基板 63 中空部分 64 蓋 65 隆起周圍部分 66 基板接合面 67 碟形主體 6 8 蓋接合面 69 隆起周圍部分Page 52 556330 Brief description of the drawing 26 Cover joint surface 2 8 Joint surface 3 0 Upper exposed surface 32 Lower exposed surface 40 Package 42 Resin substrate 43 Hollow portion 44 Cover 45 Bulging surrounding portion 46 First substrate joining surface 47 Dish-shaped body 48 Second substrate joint surface 49 Raised peripheral portion 50 First lid joint surface 52 Second lid joint surface 60 Package 62 Resin substrate 63 Hollow portion 64 Cover 65 Raised peripheral portion 66 Substrate joint surface 67 Dish body 6 8 Lid joint surface 69 Raised Surrounding part

第53頁 556330 圖式簡單說明 70 封裝 72 樹脂基板 73 中空部分 74 蓋 75 隆起周圍部分 76 基板接合面 77 碟形主體 78 蓋接合面 79 隆起周圍部分 80 封裝 82 樹脂基板 83 中空部分 84 蓋 85 隆起周圍部分 86 基板接合面 87 碟形主體 88 蓋接合面 89 隆起周圍部分 90 封裝 92 樹脂基板 93 中空部分 94 蓋 95 隆起周圍部分 96 基板接合面Page 53 556330 Brief description of the diagram 70 Package 72 Resin substrate 73 Hollow portion 74 Cover 75 Swell surrounding portion 76 Substrate bonding surface 77 Dish body 78 Cover joint surface 79 Swell surrounding portion 80 Package 82 Resin substrate 83 Hollow portion 84 Cover 85 Swell Peripheral section 86 Substrate joint surface 87 Dish-shaped body 88 Cover joint surface 89 Swell peripheral section 90 Package 92 Resin substrate 93 Hollow section 94 Cover 95 Swell peripheral section 96 Substrate joint surface

第54頁 556330 圖式簡單說明 9 6a 第一基板接合面 96b 第二基板接合面 96c 第三基板接合面 97 碟形主體 98 蓋接合面 98a 第一蓋接合面 98b 第二蓋接合面 98c 第三蓋接合面 99 隆起周圍部分 _Page 54 556330 Brief description of the drawings 9 6a First substrate joining surface 96b Second substrate joining surface 96c Third substrate joining surface 97 Dish body 98 Cover joining surface 98a First cover joining surface 98b Second cover joining surface 98c Third Cover joint surface 99 around the bulge _

第55頁Page 55

Claims (1)

556330 _案號91109650 年月日 修正_ 六、申請專利範圍 連向外向下傾斜平面。 7、 如申請專利範圍第3項之具有空穴構造之樹脂模製 封裝,其中該蓋接合面與基板接合面中之第一者包括至少 一環形延伸之凸面,而其第二者包括一環形延伸而且與該 凸面σ齒合之凹面。 8、 如申請專利範圍第7項之具有空穴構造之樹脂模製 封裝,其中該凸面包括一環形延伸之圓形隆起,而該凹面 包括一環形延伸而且與該圓形隆起σ齒合之圓形凹槽。 9、 如申請專利範圍第8項之具有空穴構造之樹脂模製 封裝,其中該蓋接合面包括該圓形隆起,而該基板接合面 包括該圓形凹槽。 1 0、如申請專利範圍第8項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面包括該圓形凹槽,而該基板接合 面包括該圓形隆起。 11、如申請專利範圍第7項之具有空穴構造之樹脂模 製封裝,其中其中該凸面包括一環形延伸之錐形隆起,而 該凹面包括一環形延伸而且與該錐形隆起嚙合之錐形凹 槽。 1 2、如申請專利範圍第11項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面包括該錐形隆起,而該基板接合 面包括該錐形凹槽。 1 3、如申請專利範圍第1 1項之具有空穴構造之樹脂模 製封裝,其中其中該蓋接合面包括該錐形凹槽,而該基板 接合面包括該錐形隆起。556330 _Case No. 91109650 Amendment_ Sixth, the scope of patent application Even tilt the plane outwards and downwards. 7. For a resin molded package with a cavity structure, such as in claim 3, wherein the first of the cover bonding surface and the substrate bonding surface includes at least one annularly extending convex surface, and the second one includes an annular shape A concave surface that extends and conforms to the convex surface σ. 8. The resin molded package with a cavity structure as claimed in item 7 of the scope of the patent application, wherein the convex surface includes a circular protrusion extending in a ring shape, and the concave surface includes a circle extending in a circle and conforming to the circular protrusion σ.形 槽。 Shaped groove. 9. The resin-molded package having a cavity structure as claimed in claim 8, wherein the cover joint surface includes the circular bulge, and the substrate joint surface includes the circular groove. 10. The resin-molded package having a cavity structure according to item 8 of the application, wherein the cover joint surface includes the circular groove, and the substrate joint surface includes the circular bump. 11. The resin-molded package with a cavity structure as claimed in claim 7 in which the convex surface includes a circularly extending conical ridge, and the concave surface includes a circularly extending cone that engages with the conical ridge. Groove. 1 2. The resin-molded package having a cavity structure according to item 11 of the application, wherein the cover joint surface includes the tapered bump, and the substrate joint surface includes the tapered groove. 13. The resin-molded package having a cavity structure as described in claim 11 in the patent application range, wherein the cover joint surface includes the tapered groove and the substrate joint surface includes the tapered ridge. 第57頁 556330 案號 91109650 年 月 曰 修正 六、申請專利範圍 1 4、如申請專利範圍第1 1項之具有空穴構造之樹脂模 製封裝,其中該錐形隆起包括一 V形隆起,而該錐形凹槽 包括一V形凹槽。 1 5、如申請專利範圍第11項之具有空穴構造之樹脂模 製封裝,其中該錐形隆起包括梯形隆起,而該錐形凹槽包 括梯形凹槽。 1 6、如申請專利範圍第1項之具有空穴構造之樹脂模 製封裝,其中此等引線係自該中央部分上表面傾斜至該基 板底部周圍。Page 57 556330 Case No. 91109650 Amendment VI. Patent application scope 14 4. A resin-molded package with a cavity structure such as item 11 of the patent application scope, wherein the tapered ridge includes a V-shaped ridge, and The tapered groove includes a V-shaped groove. 15. The resin-molded package having a cavity structure according to item 11 of the application, wherein the tapered protrusion includes a trapezoidal protrusion, and the tapered groove includes a trapezoidal groove. 16. The resin-molded package having a cavity structure as described in the first item of the patent application scope, wherein the leads are inclined from the upper surface of the central portion to around the bottom of the substrate. 1 7、如申請專利範圍第1項之具有空穴構造之樹脂模 製封裝,其中該蓋包括一平坦主體與一具有蓋接合面之周 圍部分。 1 8、一種具有空穴構造之樹脂模製封裝,包括: 一基板,其具有一周圍部分與中空部分,該中空部分 係由該周圍部分所界定,而且該中空部分的水平低於該周 圍部分的最上面; 一半導體晶片’其安裝在該中空部分的上表面上,17. The resin-molded package having a cavity structure as described in claim 1, wherein the cover includes a flat body and a surrounding portion having a cover joint surface. 18. A resin molded package having a cavity structure, comprising: a substrate having a surrounding portion and a hollow portion, the hollow portion being defined by the surrounding portion, and the level of the hollow portion being lower than the surrounding portion Topmost; a semiconductor wafer 'mounted on the upper surface of the hollow portion, 數條引線,其與該半導體晶片電耦合,而且此等引線 貫穿該基板,並自該中空部分的上表面傾斜至該基板底部 周圍;以及 一蓋,其界定一容納該半導體晶片之空穴,該蓋包括 一平坦主體與一周圍部分,其具有一蓋接合面與該隆起周 圍部分的基板接合面接合,而且該蓋接合面與該基板接合 面之水平高於該中空部分的上表面,該蓋接合面與該基板A plurality of leads that are electrically coupled with the semiconductor wafer, and that the leads penetrate the substrate and are inclined from the upper surface of the hollow portion to around the bottom of the substrate; and a cover that defines a cavity that houses the semiconductor wafer, The cover includes a flat body and a peripheral portion, and the cover has a cover engaging surface that is engaged with the substrate engaging surface of the raised peripheral portion, and the level of the cover engaging surface and the substrate engaging surface is higher than the upper surface of the hollow portion. Cover joint surface and the substrate 第58頁 556330 _案號91109650_年月曰 修正_ 六、申請專利範圍 接合面彼此嚙合,而且該蓋接合面與基板接合面各包括至 少一非水平面。 1 9、如申請專利範圍第1 8項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面與基板接合面各包括一環形延伸 之向内向下傾斜平面。 2 0、如申請專利範圍第1 8項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面與基板接合面各包括一傾斜平面 與環形延伸之水平且平坦表面的組合。 2 1、如申請專利範圍第1 8項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面與基板接合面各包括一環形延伸 之連向外向下傾斜平面。 2 2、如申請專利範圍第1 8項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面與基板接合面中的第一者包括至 少一環形延伸之凸面,而其第二者包括一環形延伸而且與 該凸面嚙合之凹面。 2 3、如申請專利範圍第2 2項之具有空穴構造之樹脂模 製封裝,其中該凸面包括 一環形延伸之圓形隆起,而該凹面包括一環形延伸而且與 該圓形隆起嚙合之圓形凹槽。 24、如申請專利範圍第23項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面包括該圓形隆起,而該基板接合 面包括該圓形凹槽。 2 5、如申請專利範圍第2 3 有空穴構造之 製封裝,其中該蓋接合面包括該圓形凹槽,而該基板接合P.58 556330 _Case No. 91109650_ Year Month Amendment_ 6. Scope of patent application The joint surfaces are engaged with each other, and the cover joint surface and the substrate joint surface each include at least one non-horizontal plane. 19. The resin-molded package with a cavity structure as described in claim 18, wherein the cover joint surface and the substrate joint surface each include an inwardly inclined downward plane extending in a ring shape. 20. The resin-molded package having a cavity structure as described in claim 18, wherein the cover joint surface and the substrate joint surface each include a combination of an inclined plane and a horizontal and flat surface extending in a ring shape. 2 1. The resin-molded package having a cavity structure as described in claim 18, wherein the cover joint surface and the substrate joint surface each include an annularly extending connecting surface that slopes downward and outward. 2 2. The resin-molded package with a cavity structure as described in claim 18, wherein the first of the cover joint surface and the substrate joint surface includes at least one annularly extending convex surface, and the second one includes A concave surface extending annularly and engaging the convex surface. 2 3. The resin-molded package with a cavity structure as described in claim 22, wherein the convex surface includes a circular protrusion extending in a ring shape, and the concave surface includes a circle extending into the ring shape and meshing with the circular protrusion.形 槽。 Shaped groove. 24. The resin-molded package having a cavity structure as claimed in claim 23, wherein the cover joint surface includes the circular bump, and the substrate joint surface includes the circular groove. 25. The package with a cavity structure as described in the patent application No. 23, wherein the cover bonding surface includes the circular groove, and the substrate is bonded 第59頁 556330 _案號91109650_年月曰 修正_ 六、申請專利範圍 面包括該圓形隆起。 2 6、如申請專利範圍第2 2項之具有空穴構造之樹脂模 製封裝,其中其中該凸面包括一環形延伸之錐形隆起,而 該凹面包括一環形延伸而且與該錐形隆起嚙合之錐形凹 槽。 2 7、如申請專利範圍第2 6項之具有空穴構造之樹脂模 製封裝,其中該蓋接合面包括該錐形隆起,而該基板接合 面包括該錐形凹槽。 2 8、如申請專利範圍第2 6項之具有空穴構造之樹脂模 製封裝,其中其中該蓋接合面包括該錐形凹槽,而該基板 接合面包括該錐形隆起。 2 9、如申請專利範圍第2 6項之具有空穴構造之樹脂模 製封裝,其中該錐形隆起包括一 V形隆起,而該錐形凹槽 包括一 V形凹槽。 3 0、如申請專利範圍第2 6項之具有空穴構造之樹脂模 製封裝,其中該錐形隆起包括梯形隆起,而該錐形凹槽包 括梯形凹槽。Page 59 556330 _Case No. 91109650_ Year Month Amendment_ Sixth, the scope of patent application The surface includes the circular bulge. 26. The resin-molded package having a cavity structure as described in claim 22, wherein the convex surface includes a circularly extending conical ridge, and the concave surface includes a circularly extending and meshing with the conical ridge. Conical groove. 27. The resin-molded package having a cavity structure according to item 26 of the patent application, wherein the cover joint surface includes the tapered bump, and the substrate joint surface includes the tapered groove. 28. The resin-molded package having a cavity structure according to item 26 of the patent application, wherein the cover joint surface includes the tapered groove, and the substrate joint surface includes the tapered bump. 29. The resin-molded package with a cavity structure according to item 26 of the patent application, wherein the tapered protrusion includes a V-shaped protrusion, and the tapered groove includes a V-shaped groove. 30. The resin-molded package having a cavity structure as described in claim 26, wherein the tapered protrusion includes a trapezoidal protrusion, and the tapered groove includes a trapezoidal groove. 第60頁Page 60
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