TW550730B - Semiconductor manufacturing method and apparatus - Google Patents

Semiconductor manufacturing method and apparatus Download PDF

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Publication number
TW550730B
TW550730B TW091109971A TW91109971A TW550730B TW 550730 B TW550730 B TW 550730B TW 091109971 A TW091109971 A TW 091109971A TW 91109971 A TW91109971 A TW 91109971A TW 550730 B TW550730 B TW 550730B
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Taiwan
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gas
anion
concentration
substrate
water
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TW091109971A
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Chinese (zh)
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Toshiaki Fujii
Shin Yokoyama
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Ebara Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ventilation (AREA)
  • Electrostatic Separation (AREA)
  • Disinfection, Sterilisation Or Deodorisation Of Air (AREA)
  • Treating Waste Gases (AREA)

Abstract

The present invention provides a semiconductor manufacturing method and apparatus capable of reducing oxidation of the surface of semiconductor wafers using a simple means which comprehensively controls pollutants which facilitate oxidation and contaminants which decrease wafer-yield at the same time. The method of manufacturing semiconductors according to this invention processes the substrate while exposing the substrate surfaces to an anion-enriched gas. The apparatus for manufacturing semiconductors according to this invention comprises a gas passage for delivering gas for process, a gas adjustment device composed of a gas detection device disposed upstream from the gas passage and an anion-generation device disposed downstream thereof, and a supply means for delivering the anion-enriched gas to the surfaces of the substrate.

Description

550730 五、發明說明（1) ^--- [技術領域] 液 本發曰f =關半導體之製造，特別是有關在半導體 晶/Λ端/ι +導體製造方法及裝置。 [背景技#T ] =3^ ’通常係在稱為潔淨室（clean room)之 f調整空，境之空間内所，故在作業環境中之空 ，ί淨係5㊉ί要。兹就半導體工廠（潔淨室）之習用之空 氣清淨技術，參照第8圖 等骽 篦8圖中，玄从也 如以說明0 i本咚相拙； 外上氣1首先通過預濾機（Prefilter)2， 被去除粗粒子，接荖A ^ % m ^ 後，使用中性能收塵機：調機3進行”及J度之調整 ^ ^ m t, 1 ^HEPAC ^ νΛ V "/；? 5f 係以去除微粒子為 而如此之構成雖對微粒 〜a(向致含塵空氣）過濾機，去除微細粒 子。由如此之空氣清淨裝置，潔淨室内即可維持在微粒子 濃度級1 0,00 0。另外，第8圖中、，符號7-1、7-2為排風 機，而箭頭表示空氣流向。 由於習用之潔淨室中之空氣清淨， 目的，故構成為如第8圖之方式，而如 子之去除有效，惟對翁_狀有害成份 矛、則無效。 1化藉二年來’在+ 2僅微粒子(粒子狀物質）， =質化、精岔化之進展，認為不關涔染。 氣體狀物質亦已對半導體造成相淨寞用收塵機（例如， 然而，第8圖所示之習用之=氣）過濾機等）僅能去除 HEPA過濾機，ULpA(過大蜜含麈有害成份則未經去除而 微粒子，而來自室外空氣之氣體膊550730 V. Description of the Invention (1) ^ --- [Technical Field] Liquids f = Guan semiconductor manufacturing, especially related to semiconductor crystal / Λ terminal / ι + conductor manufacturing method and device. [Background technology #T] = 3 ^ 'It is usually located in a clean room (clean room) to adjust the space and the environment, so in the operating environment, the net is 5 points. For the conventional air cleaning technology of the semiconductor factory (clean room), please refer to Figure 8 and Figure 8 for details. Xuan Cong also explained as follows: 0 i This is the first time; the external gas 1 first passes through the prefilter (Prefilter ) 2, after removing coarse particles, use A ^% m ^, then use a medium-performance dust collector: adjust 3 "and adjust the J degree ^ ^ mt, 1 ^ HEPAC ^ νΛ V "/;? 5f The structure is based on the removal of fine particles. Although it is a filter for fine particles ~ a (toward dusty air), it removes fine particles. With such an air cleaning device, the clean room can be maintained at a fine particle concentration level of 10,000. In addition, in Figure 8, the symbols 7-1 and 7-2 are exhaust fans, and the arrows indicate the direction of air flow. Because the air in the conventional clean room is clean, the purpose is, so it is structured as shown in Figure 8, and The removal of the seeds is effective, but it is not effective for the spear, which is a harmful component of the Weng _ shape. In the past two years, the only two particles (particulate matter) in the + 2 +, the progress of qualitative and refined, is not considered to be related. Gaseous substances have also caused phase separation in semiconductors (eg, however, Figure 8 = Of the conventional air) filter, etc.) can only be removed HEPA filter, ULPA (stag large honey containing fine particles and harmful components are not removed, from the outdoor air and the gas buck

313678.ptd 550730 、發明說明（2) 被導=潔淨室内。如此之氣體狀有害成份可例舉如：汽車 之f、來自作為民生用品廣泛使用之高分子樹脂製品之 脫亂/發，氣）所起因之稱為碳化氫（Η · C ·))之氣體或如 ΝΗ 3(氨）等之鹽基性（碱性）氣體等。 、^其中’碳化氫（Η· C.)係由於其氣體狀有害成份即使在 通t之空氣（室内空氣及室外空氣）中之極低濃度亦會引起 巧染，、故有必要完全去除。又，最近，來自潔淨室之構成 ^料或製造裝置、使用器具之高分子樹脂類之碳化氫 Η · c ·)之脫氣被認為是碳化氫（H · C.)之發生源而成為問 題〇 題313678.ptd 550730, description of the invention (2) Guided = clean room. Examples of such gas-like harmful components include: gas of automobiles (f), gas / carbon from polymer resin products widely used as consumer goods, gas called hydrocarbon (Η · C ·)) Or a basic (alkaline) gas such as NH 3 (ammonia). Among them, ‘hydrocarbon (Η · C.) Is due to its gas-like harmful components, even if the extremely low concentration in the air (indoor air and outdoor air), will cause the dyeing, so it is necessary to completely remove it. In addition, recently, degassing of hydrocarbons (Η · c ·) from polymer materials such as structural materials, manufacturing equipment, and appliances using clean rooms has been considered as a source of hydrocarbons (H · C.) and has become a problem. 〇 Question

=乎室内之作業所產生之此等氣體狀物質，亦會成 二二’、即/在通常之潔淨室内，以氣體狀物質之發生原 夕:4 ^ <室外空氣所導入之氣體狀物質（未被潔淨室月 内^ 子去除過據機所去除，以致從室外空氣導入潔淨 > > +之外尚加上潔淨室内所產生之氣體狀物質之故， ::〇内之氣體狀物質之濃度將較室外空氣為高，以致 木+導體基板之可能性較高。 起美ί ί粒狀之巧染物質附著於半導體基板表面，則將= These gaseous substances produced by indoor operations will also form 22 ', that is, the occurrence of gaseous substances in ordinary clean rooms: 4 ^ < gaseous substances introduced by outdoor air (It has not been removed by the clean room within the month, so that clean air is introduced from the outdoor air > > + In addition to the gaseous substances generated in the clean room, the gaseous form of :: 〇 The concentration of the substance will be higher than the outdoor air, so that the possibility of wood + conductor substrate is higher. KIMEI ί Grainy cleverly dyed substance adheres to the surface of the semiconductor substrate, then

ίίΪί面之電路（圖案）之斷線或短路而有缺陷。又， 轧體狀有宝成份，胜 表面，則議接=碳化氮(H.C·)附著於半導體基 (resist)間之親和性增大，而對例如基板與抗姓層 與抗餘層間之親和性^卜應性）有不良影響。並且，如基 蝕層間之穷厶性右又：： 則對抗蝕層之膜厚或基板與 " 不良影響。又，亦有碳化氫（H· C·)會The circuit (pattern) of ίίίί is broken or short-circuited and defective. In addition, if the rolled body has a precious component and wins the surface, it is suggested that the affinity between nitrogen carbide (HC ·) attached to the semiconductor substrate (resist) increases, and for example, the affinity between the substrate and the anti-surname layer and the anti-residue layer Sex ^ Buying sex) have adverse effects. And, if the poorness between the underlying layers is right:: It will have an adverse effect on the film thickness of the resist layer or the substrate. There is also a hydrocarbon (H · C ·) meeting

550730 五、發明說明（3) 起半導體基板表面之氧化膜之耐壓劣化（可靠性低落）之問 題。在此，接觸角係指因水而潤濕之接觸角之意，係表示 基板表面之污染程度之指標。亦即’如對基板表面附著疏 水性（油性）之污染物質，則其表面將水滴彈回而難於潤 濕。於是’與基板表面之水滴間之接觸角將增大。因而， 如接觸角大則污染度高，而接觸角小則污染度低。又， NH3將帶來銨鹽之生成而引起半導體基板上之混濁（解相不 佳）。 由此原因，包括微粒子，上述之氣體狀污染物質將使 半導體製品之生產性（良率）下降。 特別是，屬於氣體狀有害成份之上述氣體狀物質係由 上述之發生原因而產生，加之，最近由於省能源之觀點， 為增加潔淨室空氣之循環而使用之故，潔淨室中之氣體狀 物質之濃度即被濃縮以致成為較室外空氣為高之濃度，結 果，附著於基板上而污染其表面。 以因應此等污染之對策而言，本發明人等遂提出有使 用光電子或光觸媒之各種空間之潔淨化方法。 例如’使用光電子之微粒子狀物質之去除方法，可列 舉出·日本特公平3一 5859號公報、特公平6-74909號公 ^方特公平8 —211號公報、特公平7- 1 2 1 367號公報所記載 列Ϊ Ϊ。又，使用光觸媒之氣體狀有害成份之去除方法可 日本特許286341 9號公報、特許299 1 963號公報所 料方ΐ。再者。由光電子與光觸媒之併用而同時去除 一，及氣體狀物質之方法可列舉出：特許2 6 2 3 2 9 〇號公550730 V. Description of the invention (3) The problem of deterioration of the withstand voltage (low reliability) of the oxide film on the surface of the semiconductor substrate. Here, the contact angle refers to a contact angle which is wet with water, and is an index indicating the degree of contamination on the substrate surface. In other words, if water-repellent (oily) pollutants are attached to the surface of the substrate, the surface bounces water droplets and is difficult to wet. Therefore, the contact angle between 'and the water droplet on the substrate surface will increase. Therefore, if the contact angle is large, the pollution degree is high, and when the contact angle is small, the pollution degree is low. In addition, NH3 will cause the formation of ammonium salts and cause turbidity (poor phase dissolution) on the semiconductor substrate. For this reason, including fine particles, the above-mentioned gaseous pollutants will reduce the productivity (yield) of semiconductor products. In particular, the above-mentioned gaseous substances, which are gaseous harmful components, are caused by the above-mentioned causes. In addition, recently, from the viewpoint of energy saving, they are used to increase the circulation of clean room air. The concentration is concentrated so as to be higher than that of outdoor air, and as a result, it adheres to the substrate and contaminates its surface. In view of countermeasures against such pollution, the present inventors have proposed a method for cleaning various spaces using photoelectrons or photocatalysts. For example, 'Removal method of fine particles using photoelectrons can be listed in Japanese Patent Publication No. 3-5859, Japanese Patent Publication No. 6-74909, Japanese Patent Publication No. 8-211, Japanese Patent Publication No. 7- 1 2 1 367 No. Ϊ Ϊ recorded in the bulletin. Further, a method for removing a gaseous harmful component using a photocatalyst can be obtained from Japanese Patent No. 286341 9 and Japanese Patent No. 299 1 963. Again. The method of using photoelectron and photocatalyst to remove one at the same time, and the method of gaseous substances can be listed as: Patent No. 2 6 2 3 2 9 0

550730 五、發明說明（4) 報所記載之方法 然而，今後，如隨著 ， 工之製品），則由於晶思者^導體製品之商品質化（精緻加 佈線來講，有其限制之故，面八上之圖案在現狀下之A1(鋁） 亦即，在今後之超大 今後可能變換為Cu (銅）佈線。 則之縮小化下，以現電路（ULSI)中之佈線、設計規 組合來講，由於佈線延遲1佈線與Sl〇2(氧化矽）絕緣膜之 用C u佈線及低介電係數 、間會長之故，今後將有必要使 時間。在此情形，Cu松M 〇W k)之層間絕緣膜以縮短延遲 化之影響。亦即，以^抖將較習用之Μ或W(鎢）容易受氧 微粒子之去除即是，枪人，半導體製造環境下僅需要注意 化晶圓表面(佈線表面控:=狀物質，特別是對氧 以促進晶圓表)質之控制將愈形重要。 他返β日圓表面之氧化之物質而言，可舉出潔淨室空 氣中之水份及有施J羋出深命至工 ^ ^ ^ Λ X ^ ,機物（H· C·)，惟水份係按45至50% (RH(相 协Γ:/子、< 潔淨室内，故其控制有困難。其原因，係由 2 π ^ β潔淨至内作業之故，如過度降低空氣中之水份， J可此對作業人員之健康有不良影響。 因，’希望出現一種能藉由潔淨室内之水份及包括H. C·之物質之控制，以控制（抑制）晶圓表面之氧化之新穎之 方法。 本發明’有鑑於上述情況，係以提供能以簡單之機構 f可控制晶圓表面之氧化之同時，能全面控制促進氧化之 /亏染物質以及招致晶圓之良率之低降之污染物質之半導體 製造方法及裝置為課題。550730 V. The method described in the description of the invention (4) However, in the future, such as the following, the quality of the product of the conductor product (refined plus wiring, there are limitations) The current pattern of A1 (aluminum) on the surface of the eighth, that is, may be converted to Cu (copper) wiring in the future. In the future, the combination of wiring and design rules in the current circuit (ULSI) will be reduced. In terms of wiring delay 1 wiring and the use of Cu wiring (Silicon Oxide) insulating film, low dielectric constant, and long time, it will be necessary to make time in the future. In this case, Cu loose M 0W k) interlayer insulation film to reduce the effect of retardation. That is to say, the conventional M or W (tungsten) is more easily removed by oxygen particles than the conventional ones. In the semiconductor manufacturing environment, you only need to pay attention to the wafer surface (wiring surface control: = substance, especially The control of oxygen to promote wafer quality will become increasingly important. As far as the oxidized substances on the surface of the β yen are concerned, the moisture in the air of the clean room and the deep-dead work ^ ^ ^ ^ X ^, the machine (H · C ·), but water The proportion is 45 to 50% (RH (associated Γ: / 子, < clean room, so its control is difficult. The reason is from 2 π ^ β to internal operation, such as excessively reducing the Moisture, J can have an adverse effect on the health of the operator. Because, 'I hope that a kind of water in the clean room and substances including H.C. can be controlled to control (inhibit) the oxidation of the wafer surface A novel method. In view of the above, the present invention is to provide a simple mechanism that can control the oxidation of the wafer surface, and at the same time, can comprehensively control the promoted / defective substances and the yield of the wafer. A method and a device for manufacturing a low-contamination semiconductor are a subject.

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第8頁 550730 五、發明說明（5) [發明之揭示] 其特：Ϊ決ΐ述課冑，本發明提供—種半導體製造方法， 將由陰離子產生裝置所得之陰離子富化氣體 ve i〇n enriched gas)用於半導體製造過 表=之氧化抑制之下，進行半導體基板之處理。基 ^二，本發明之一實施例’係有關半導體之制、& 法，其特徵為：在使基板表面曝露 ==方 將-預處 本發明中，陰離子富化氣體， 陰離子漆^除彳粒子及/或化學污染物之清淨氣體，通過 Γ . 裝置以進行調整者較佳。在此’化學污染物可 為4自離子成份、叙嫵榀、士_牡 > 一鍤。本 兔、登A私 仃網登者較佳。在此，化學污染物1 子成份、無機物、有機物而成之群中之一種。本 中離=子富化氣體，係、以將微=度在等二°: 丄下:氣成：:農=二_下、有機物 佳。 通過陰離子產生裝置以進行凋各 又，在本發明之1^ 搞爭導艘之 之 製造裝置，其特：：：：施例'’將提供流路； 由該氣體流路之上”；有通過被處理氣雜”“τ游 部份所配置之陰離子產=置之氣體清淨：：化氟體調 整裝置、及將所得ί以，成之陰板表面 供給手段。 U離子昌化氣體供給矣多 [發明之最佳實施形態] 本發明，係在潔洚它— 你/夕雜 中’當進行基板之各種處：：導體製造過擇f在其有高度 裡處理作業之際，發現如在Page 8 550730 V. Description of the invention (5) [Disclosure of the invention] Special feature: The present invention provides a semiconductor manufacturing method that enriches the anion-enriched gas ve i〇n obtained from the anion generating device. Gas) is used for semiconductor substrate processing under oxidation suppression. Basically, one embodiment of the present invention is related to the semiconductor manufacturing method, which is characterized in that: exposing the substrate surface == square will-pre-treat the present invention, the anion rich gas, anion paint It is preferred that the clean gas of the tritium particles and / or chemical pollutants is adjusted by the Γ. Device. Here, the 'chemical contamination may be a 4 ion component, a sulfonium compound, a glutinous compound, and a compound. The rabbit and the A private network are preferred. Here, the chemical pollutant 1 is one of a group consisting of a sub-component, an inorganic substance, and an organic substance. The intermediate ion is a rich gas, so that the micro-degree is equal to two degrees: 丄 下: 气 成 :: 农 = 二 二 下, organic matter is good. The anion generating device is used to carry out the process. In 1 ^ of the present invention, the manufacturing device of the leading ship is characterized by ::: The embodiment `` will provide a flow path; from above the gas flow path ''; there is Purified gas is provided by the anion production = gas disposed in the treated gas impurity and "τ swim part": a fluoridation gas adjustment device, and a method for supplying the obtained surface of the negative plate. U ion-changing gas supply 矣[The best embodiment of the invention] The present invention is based on cleaning it-you / in the miscellaneous' when carrying out various aspects of the substrate :: conductor manufacturing process selection f.

313678.ptd 第9頁 550730 五、^,(6) — 含有=I亦即，極低之微粒子濃度及化學污染物質濃# 板下i:;離子之氣體(亦即，陰離子富化氣體)中 提升半導=理，即可抑制該處理中之基板之氧化，由車導 體製品，體製品之良率以製造可耐高性能化之要求！ 而致元成本發明。 卞 虞 基 孑 本私 ^ ° 產生、^明之陰離子富化氣體調整方法’係可分 分別加ί ΐ離子產生前之氣體之清淨化之各階段。以 Μ說明。 鱿陰離子產生方法 富化ϋ發明人等之研究確認，由於將基板曝霧在陰離 「陰離中’即可抑制基板表面之氧化之事實。在此 質，例子」係指對氧氣等親電子性物質上附著有 數個次t，對帶有陰離子之氧氣分子上再附著有1個 &份子夕QiWu八、从.•从1 - a ·· 意 電孑之 物 戒旅 再 數個水佟习φ方陪離千之氧氣分子上再附著有1 者，以乃子之s〇2_(H2〇)等之小離子（水合物離子）之 、 可訪、(Η2〇)η、Ν〇3·(Η2〇)η等之 C0X-、N0X-為核心者，办 心^本發明有關之厂陰離子」。 將視丰、卩制基板表面之氧化所需之陰離子之足夠的濃度’物質“導體之用途、種類、對半導體所要求之性能、共存 以上而變動，唯一般為1，000個/mL以上，較佳為5, 〇〇〇個 ’更隹為10, 000個/mL以上，最佳為50, 〇〇〇個/以以 上。合適之陰離子濃度可視半導體之用途、種 > ΛΛ At： u . r/T 要求 二月b、，、存物質等，適當進行預備試驗以決定。為何可 由陰離子田化氣體而抑制基板表面之氧化之理由至^尚未 月瞭’惟可推定為可能是陰離子將對基板表面賦與還作313678.ptd Page 9 550730 Five, ^, (6) — Contains = I, that is, extremely low concentration of fine particles and chemical pollutants # Under the plate i :; ionic gas (that is, anion-rich gas) By improving the semiconductivity, the oxidation of the substrate in this process can be suppressed, and the requirements for high performance can be made by the yield of car conductor products and body products! And Yuanyuan cost inventions.基 Yu Ji 孑 The method of adjusting the anion-enriched gas generated and produced by the private party ’can be divided into various stages of purifying and purifying the gas before the generation of tritium ions. Described by M. The research of the squid anion generation method, Fu Hua, and the inventors confirmed that due to the fact that the substrate is exposed to the mist "in the shade", the fact that the surface of the substrate can be inhibited from being oxidized. In this case, an example "refers to electrophilic oxygen such as oxygen Sexual substances are attached t several times, and an anion-containing oxygen molecule is attached to one more & Zixi Xi QiWu VIII, from. • from 1-a ·· Electrical goods or a few water 佟There is one more attached to the oxygen molecule of Xi fang Fangqian, and the small ions (hydrate ions) such as s〇2_ (H2〇), etc., are accessible, (Η2〇) η, Ν〇3 · (Η2〇) CoX-, NOX-, etc. as the core, care ^ plant anions related to the present invention. " It will vary depending on the sufficient concentration of the anion required for the oxidation of the surface of the substrate, the substrate, and the use, type, and performance of the semiconductor, and the coexistence of the conductor. The only one is 1,000 or more mL. It is preferably 5,000 pieces, more preferably 10,000 pieces / mL or more, and most preferably 50,000 pieces or more. The appropriate anion concentration can be determined by the use and species of the semiconductor > ΛΛ At: u r / T requires February, February, February, and other substances to conduct appropriate preliminary tests to determine. The reason why the surface oxidation of the substrate can be inhibited by the anion field gas is not yet reached, but it can be presumed that it may be an anion. Assignment to substrate surface

313678.ptd 第10頁 550730 五、發明說明（7) 〜 ------—------ 用之故。 另外，氣體中之险雜 子，並測定其離子之;^子之濃度，可由在電場中流通離 陰離子濃度測定器，右;移動度而計測。如此之氣體中之 氣離子計數器，83 4㈣=之旦科學（股）製之商品名··空 產生陰離子之方、、表 光電子之方法（日本特耸^ γ列舉：本發明人等所提案之使用 公報）、使用放電之方I么平8一！〇616號、特許3 1 39 5 9 1號 線照射之方法等。以下'、使用水破碎之方法 '使用放射 明。 就各種陰離子產生方法加以說 H :依光電子之险雜 使用光電子之陰離衣子生方\ 存在下，對光電子釋 方法，係視情況，在電場之 照射紫外線以產生料=;卜=等之紫⑷ 者。此時，可在對光電子^形成陰離子 電極（陽極）以形成電場， 」风馬對向側汉置 光電子之產峰。田= 由此可加速從光電子釋出材料之 由光雷+ Μ 41 使用光電子之陰離子產生裝置，係 = 紫外線燈等之紫外線產生源'、及視情 /電％没疋用電極所構成。以供給氣體而言，除空氣之 外’可使用Ν2 (氮氣）等之惰性氣體。 以光電子釋放材料者而言，祗要是能因紫外線之照射 即可釋出光電子者均可使用，而光電性功函數（w〇rk function)愈小者愈佳。從效果或經濟性之面來看，較佳 為 Ba(鎖）、si (認）、Ca(#5)、Y(紀）、Gd(iL)、La(鑭）、313678.ptd Page 10 550730 V. Description of the invention (7) ~ ---------------- The reason for using it. In addition, the concentration of dangerous ions in the gas and the ions of the ions can be measured by flowing the anion concentration detector in the electric field, right; the degree of movement. Such a gas ion counter in a gas, 83 4 = = trade name of the Danish Scientific Co., Ltd., a method of generating anions in space, and a method of surface photoelectron (Japanese special tower ^ γ enumeration: proposed by the present inventors, etc. Use bulletin), use the discharge method I flat 8 one! 〇616, Patent No. 3 1 39 5 9 No. 1 and other methods of irradiation. The following ", the method of using water to break" using radiometer. Let's talk about various anion generation methods H: Depending on the dangers of photoelectrons, the use of photoelectron Yin Li Yi Zi Fang \ In the presence of the photoelectron release method, depending on the situation, the ultraviolet light is irradiated in the electric field to generate materials =; bu = etc. ⑷ 者. At this time, an anion electrode (anode) can be formed on the photoelectron to form an electric field. Tian = This can accelerate the release of materials from photoelectrons. It consists of light thunder + M 41, an anion generating device using photoelectrons, an ultraviolet generation source such as an ultraviolet lamp, and an optional electrode. As the supply gas, in addition to air, an inert gas such as N2 (nitrogen) can be used. In terms of photoelectron release materials, anyone who can release photoelectrons due to ultraviolet radiation can use it, and the smaller the photoelectric function, the better. In terms of effect or economy, Ba (lock), si (recognition), Ca (# 5), Y (period), Gd (iL), La (lanthanum),

313678.ptd 第丨丨頁 550730 五、發明說明（9) :出：ίϊ之般本之特紫:卜：穿透性物質中’附加有能 4-243540號公報）質（日本特公平7一9 3098號、特開平 (a 97Λ#, Ti〇^ ^ ^ ^ - 4 y 1 9 5虎公報）。由於此種形離系 =:ΐ=:子釋出材料有不良影響。質=ΐ 之;類又除所共存之 亦極理想。 視裝置之種類、所要求之性能等， 等、ί::Ϊ 2料之形狀’可按照板狀、褶狀、網狀 ί。^中，如氟體之穿透形態或裝置之種類而適當選 光電^放出材2狀之光電子釋出材料，使氣體從網狀 ==;:::面=表*’而不形成電場即可進 又，由於如使視所適用之裝置之情況亦極理想。 光電子釋出裝置可，乂罨于樟出材枓一體化，則 相。該一體化，可j孓化故，視所適用之情況亦極理 “材料而做到由例如，…線燈之表面附加光電子 i)卜、0 #//"^ 6-749 1 ° π田夕I /使用來看，以紫外線最為理想。 釋出材料能釋夕出J=了 ^是因其照射而使光電子 ώ之電子者均可採用，從小型化來看，較佳313678.ptd p. 丨 550730 V. Description of the invention (9): Out of the original: Special purple: Bu: penetrating substance 'with the addition of No. 4-243540 bulletin] quality (Japanese special fair 71 No. 9 3098, JP Kai (a 97Λ #, Ti〇 ^ ^ ^-4 y 1 9 5 Tiger Bulletin). Due to this type of dissociation system =: ΐ =: The release material has an adverse effect. Quality = ΐ In addition to the coexistence, it is also ideal. Depending on the type of device and the required performance, etc., ί :: Ϊ 2 The shape of the material can be in the shape of a plate, pleated, or mesh. ^ In such as fluorine The shape of the body's penetration or the type of device is appropriately selected. The photoelectron release material in the shape of the photoelectric ^ discharge material 2 is used to make the gas from the mesh == ;; ::: surface = table * 'without forming an electric field. If the situation of the applicable device is also ideal, the optoelectronic release device can be integrated with the material from the camphor tree, then the integration. The integration can be changed, and it is also very reasonable depending on the applicable situation. "Material can be achieved by, for example, adding photoelectrons to the surface of a line lamp. I) Bu, 0 # // " ^ 6-749 1 ° π 田 夕 I / In terms of use, ultraviolet light is the most ideal. Evening out the ^ J = optoelectronic ώ is because the irradiation of the electron can be caught, the miniaturization point of view, preferred

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第13頁 550730 五、發明說明（11) ^ 如，因水在空氣中噴霧時所產生之液滴之喷霧帶電，而可 產生陰離子。藉由瀑布效應之陰離子產生機構’其情況如 下。水分子係電性偏至陰陽之極性分子，而在水表面則陽 極側配向為外側（配向偶極子（d i po 1 e ))。由於陰離子多被 吸引到該配向偶極子上之故，形成有電性二重層’而如對 此部份賦與高壓等之能量時，則會產生陰極帶電之空氣。 亦即，由於水表面係陽極之故，與之鄰接之空氣將成為陰 極而如對水施加高壓使其微細化，則將產生陰極離子化之 空氣。其次，必要時，使該空氣氣化蒸發，則可去除多餘 之共存水份之故，將形成經陰離子富化之空氣° A-4 :依放射線放射之陰離子產生方法 放射線照射法，係對空氣照射放射線以產生陰離子 者。能在該方法使用之放射線，祗要是因放射線源而能產 生離子者即可使用任一種放射線，而可採用x光照射法、 α線照射法、r線照射法、石線照射法等。其中’由操作 性簡易而言，以X線照射法、α線照射法、7線照射法較 佳，尤以X光照射法為理想。X光照射法，係使用對氣體分 子照射X光而得之離子者，通常，對金屬靶照射加速電子 束，使所得之X線碰撞氣體分子，藉以使空氣離子化。 本發明方法中特別適用之使用柔和X光（soft X-ray) 之離子化之機構，可以是如下所述。空氣分子將吸收所照 射之X光，亦即光子（photon)(波長〇·2至03nm)並進行電離 (ionize)，亦即離子化。由於經電離之電子具有高運動能 量之故，與中性之電子·分子之間之碰撞而使此等電離。Page 13 550730 V. Description of the invention (11) ^ For example, anion can be generated because the spray of the droplets generated when water is sprayed in the air is charged. The case of the anion generating mechanism by the waterfall effect is as follows. Water molecules are polar molecules that are electrically polarized to yin and yang, while on the water surface, the anodic side is aligned to the outside (alignment dipole (d i po 1 e)). Because anions are often attracted to the alignment dipole, an electrical double layer is formed. If high-voltage energy is applied to this part, air charged with the cathode is generated. That is, since the water surface is an anode, the air adjacent to it will become a cathode, and if high pressure is applied to the water to make it finer, the cathode ionized air will be generated. Second, if necessary, the air is vaporized and evaporated to remove excess co-existing water. Anion-enriched air will be formed. A-4: Anion generation method based on radiation. Radiation irradiation method is for air. Those who irradiate radiation to generate anions. For the radiation that can be used in this method, anyone who can generate ions due to the radiation source can use any type of radiation. X-ray irradiation, α-ray irradiation, r-ray irradiation, and stone-ray irradiation can be used. Among them, from the standpoint of ease of operation, the X-ray irradiation method, the α-ray irradiation method, and the 7-ray irradiation method are preferable, and the X-ray irradiation method is particularly preferable. The X-ray irradiation method uses ions obtained by irradiating gas molecules with X-rays. Generally, a metal target is irradiated with an accelerated electron beam, and the obtained X-rays collide with gas molecules, thereby ionizing air. The ionizing mechanism using soft X-ray particularly suitable in the method of the present invention may be as follows. Air molecules will absorb the irradiated X-rays, that is, photons (wavelength 0.2 to 03 nm) and ionize, that is, ionize. Because ionized electrons have high kinetic energy, they collide with neutral electrons and molecules to ionize them.

313678.ptd 第15頁 550730 五、發明說明（13) 格，有時較理想 從陰離子富化氣體去除所產生之臭氧之方法，可例 舉、·將陰離子產生後之氣體，使用周知之〇3處理劑處理之 方法。可為此目的而使用之周知之03處理劑可例舉： Μη(鐘系觸媒。以在本發明中可使用之&處理劑而言，較 佳為氣體中共存之產生陰離子之減少較小之物質、形狀 者例如 了使用成型為蜂窩狀或網狀之二氧化系觸媒， 例如，Mn〇2/Ti〇2 —c、Mn〇2/Zr〇 —c等。 竿、 下列第1表中，表示上述各陰離子產生法之特徵。表 中之記號係各方法有關之相對性比較，〇為良好、△為稍 劣之意。 第1表：各種陰離子產生法之特徵 對大型化 之適用性 對小型化 之適用性 陰離子產 生量·濃度 氧化抑制 效果·陰離 子之純度 安全性 光電子法 △ △至〇 Δ 〇] 〇 放電法 〇 〇 〇 △至〇 〇 水破碎法 〇 Δ 〇 △至〇 〇~ 放射線照 射法 〇 〇 〇 △至〇 △ 1—~~— 從上述表可知，例如，光電子法雖對大型化之適 杈差，惟因係無臭氧而無污染之陰離之故具有氧化抑 佳效果，又放射線照射法雖對大型化·小型化之適用性及313678.ptd Page 15 550730 V. Description of the invention (13) Sometimes, it is better to remove the ozone generated from anion-enriched gas. For example, you can use the well-known gas after the anion is generated. Method of processing agent treatment. The well-known 03 treatment agents that can be used for this purpose can be exemplified: Μη (Bell catalysts. For the & treatment agents that can be used in the present invention, it is preferred that the reduction of anion generation coexisting in the gas is smaller than For small substances and shapes, for example, use is made of a catalyst formed in a honeycomb shape or a network shape, such as Mn〇2 / Ti〇2-c, Mn〇2 / Zr〇-c, etc. Rod, the following first The table shows the characteristics of each of the above anion production methods. The symbols in the table are relative comparisons of each method. 0 is good and △ is slightly inferior. Table 1: The characteristics of various anion production methods are applicable to large-scale Applicability of miniaturization to miniaturization Anion generation concentration concentration inhibitory effect Anion purity safety Photoelectron method △ △ to 〇Δ 〇] 〇 Discharge method 〇〇〇 △ ～ 〇 water breaking method 〇 △ 〇 △ 至 〇〇 ~ Radiation irradiation method 〇〇〇 △ ～ 〇 △ 1— ~~ — As can be seen from the above table, although the photoelectron method is not suitable for large scale, it has oxidation inhibition because it is ozone-free and pollution-free. Good effect, put again Applicability of the ray irradiation method to large-scale and miniaturization, and

313678.ptd 第17頁 550730 .發明說明（14) 陰 中 途 法 離子產生量極具優勢，惟在安全性方面較差 ，在考慮上述各種陰離子產生法本^月 :所需要之性能等之下，可適當選==離= 上述陰離子產生法中，私租—、 後施行加濕，或依水破碎法；=法J =子產生 :之=其他方式者為大之事實離：=離 %，或在放電法中不施行加渴時 九電子法 ^ ^ ^ /Λ^ ^ 或依水破碎法產生陰離子時所形成之陰子離後子=，， 5nm程度。並且，由本發明人等之 ^ ^徑為3至 坪細原因不清楚，惟可能是如下 Z 之事只。其 中心分子（例如，氧分子）具有負：二？即’陰離子係 著）在其周圍，惟具有該吸著水：，而水/子吸著（附 者，將由於基板之氧化抑制到某程度 途、裝置之規模、所需要之賴执少枝，议果因而，視用 法或依水破碎法之陰離子產生‘較帶加濕之放電 本發明中，係使基板曝露在如此方 富化氣體之下進行基板之處理者，惟斤陰離子 化氣體之利用目的地，亦即在 在陰離子富 陽電極’並在電場中吸引陰離；ς::,:向設置 更為有效。此乃因陰離子之移：速板；制上 或構造等之情況’其消費較多之故。 、之形狀313678.ptd Page 17 550730. Description of the invention (14) The amount of ions produced by the anion method is very advantageous, but it is poor in safety. Taking into account the various anion production methods described above: the required performance, etc., Appropriately selected == Lit = In the above-mentioned anion production method, private rent—, followed by humidification, or water-crushing method; = method J = sub-production: the fact that the other methods are large Nine electron method ^ ^ ^ / Λ ^ ^ when thirst is not applied in the discharge method or the anion formed by the anion when the anion is generated by the water-crushing method =, about 5nm. In addition, the reason why the diameter of the ^^^ by the inventors is 3 to 细 is not clear, but it may be the following thing Z only. Its central molecule (for example, an oxygen molecule) has a negative: two? That is, 'anion system' is around it, but it has the adsorption water: and water / ion adsorption (attachment, it will inhibit the oxidation of the substrate to a certain extent, the scale of the device, and the number of dependencies required. Therefore, depending on the usage or the anion produced by the water-crushing method, the discharge is more humidified. In the present invention, the substrate is exposed to such a rich gas for the substrate treatment, but the anionized gas Utilizing the destination, that is, attracting the anion in the anion-rich anode electrode and in the electric field; ς ::, :: direction is more effective. This is because of the shift of the anion: the speed plate; the system of manufacture or construction, etc. The reason for more consumption.

313678.ptd 550730 五、發明說明（15) 本發明中，係如上述之 富化氣體者，惟如氣體中人 1仇陰離子以形成陰離子 子將被污染物質所消費。{ y =物貝，則所產生之陰離 中，則由於所產生之陰離子微粒子狀物質存在氣體 成荷電粒子之故，陰離子 .2將移轉到該微粒子而形 在抑制基板氧化之陰離子曲、、因此’用於有效活用 半導體基板，會因微粒子=二將減少。又，一般周知， 生污染並使良率急速下降^彳事匕I污染物質之存在而顯著產 如c 12(氯氣）般之酸性氣體，貝再者，如氣體中殘留有 生作業，則雖亦會形成c i二氣此氣體施行陰離子產 子可能具有氧化力之故，2不專么f人陰離子，惟如此之陰離 之抑制」之g的。因而，S ==本發明之「基板之氧化 物質後，再進行陰離子產：處=充分去除如此之化學污染 子及離子成份、無機物本J::J佳為2預先去除有微粒 體，通過上述之陰離子產 專之化學性污染物質之氣 言，本發明中，供給陰 、以產生陰離子。具體而 早：奠声’、、""離子產生裝置之氣體，較佳為料初 4級(氣體1ft3(立方英幻中之粒子個數Λ準 ;:乂“)100以下，較佳為10以下，更佳為二離 『成^辰度在1<Mg/m3以下，較佳為5"g/m3以下、特佳離^ #，m以下，有機物濃度在丨〇 " g/m3以下、較佳為在$ /、、、 g/m3以下、特佳為2 // g/m3以下。在此，「離子成份」係指 如 N0X、s〇x、HC1、HF、ci2、F2、HBr、Br2之酸性氣體、以曰 及如氨、胺等之碱性氣體。313678.ptd 550730 V. Description of the invention (15) In the present invention, it is the person who enriches the gas as described above, but if the gas is an anion, it will be consumed by polluted substances. {y = matter shell, in the anion generated, because the produced anionic microparticle-like substance has gas as a charged particle, the anion .2 will be transferred to the microparticle to form an anion curve that inhibits the oxidation of the substrate, Therefore, 'for the effective use of semiconductor substrates, the number of particles will be reduced due to the number of particles. In addition, it is generally known that pollution occurs and the yield rate drops sharply. The presence of polluting substances significantly produces acidic gas such as c 12 (chlorine). Moreover, if raw operations remain in the gas, although Ci gas will also be formed. This gas may have oxidizing power for the production of anions. 2 is not specialized for human anions, but the inhibition of such anions. Therefore, S == "anion production of the substrate after the anion production, then anion production: place = fully remove such chemical contamination and ionic components, inorganic substances. J :: J Jiawei 2 in advance to remove particulates, through the above In the present invention, the anion is a chemical pollution substance. In the present invention, the anion is supplied to generate anions. Specific and early: the gas of the ion generating device, preferably the fourth level of the material. (Gas 1ft3 (the number of particles in the cubic magic fantasy: 准 quasi ;: 乂 ") 100 or less, preferably 10 or less, more preferably two-off" Chen ^ Chen degree below 1 < Mg / m3, preferably 5 & quot Below g / m3, especially good ^ #, below m, organic matter concentration is below 〇 " below g / m3, preferably below $ / ,,, below g / m3, especially preferably 2 // g / m3 Hereinafter, the "ionic component" means an acidic gas such as NOX, sox, HC1, HF, ci2, F2, HBr, and Br2, and an alkaline gas such as ammonia and amine.

313678.ptd 第19頁 550730 五、發明說明（16) 如上所說明，本挤明+ ^从认 生裝置之氣體施予污毕：：去”為預先將供給陰離子產 可大分ί 理所進行之污染物質去除處理， 理。兹就各處理加以說明如下及化予m物質去除處 β·微粒子去除處理 本發明中施予陰離子產生虚 子捕集到等級1〇〇以下，較佳為 乳體，為預先將微粉 可達成此清淨度者，則可採用，/ ，寺佳為1以下，如 除手段。本發明中可採用之微粒子去除手段可η: 之方法、或使用本發明人等別外所提案之光電子之 Β - 1 :依過濾機之微粒子去除手段 本^明中可作為微粉子去除手段χ之過據 ULPA過濾機、ΗΕΡΑ過濾機、中性能過滤機、靜電過濾313678.ptd Page 19 550730 V. Description of the invention (16) As explained above, this condensed + ^ from the gas of the recognition device to the pollution completion: "go" is carried out in advance to supply anion production can be Oita The pollutant removal treatment is described below. Each treatment is described below. The β · microparticle removal treatment is performed at the material removal site. In the present invention, the anion generation is applied to capture the pupae to a level of 100 or less, preferably a milk body. If the fine powder can achieve this cleanliness in advance, you can use, /, Sijia is 1 or less, such as the removal method. The fine particle removal means that can be used in the present invention can be η: method, or use other places such as the inventor Proposal Photoelectron B-1: According to the microparticle removal method of the filter, it can be used as a micropowder removal method in the description. ULPA filter, ZEPA filter, medium performance filter, electrostatic filter

中周知之過遽機，可使用此等中之1種或組合W _ Β-2·依光電子之微粒子去除手段 本手段，係本發明人等另外在日本特公平6 749〇9 號、特公平7- 1 2 1 369號、特公平8—211號、特公22 號等中所提案之使用光電子以進行微粒 子之去除之方法。本方法，係與上述之使用光電子以產 陰離子之方法同樣方式’產生陰離子，再由所產生之陰 子使微粒子帶電、並使用電極等以捕集並去除荷電微粒子If you know about the machine, you can use one or a combination of these. W _B-2 · Photoelectron particle removal method This method is the inventor's special Japanese Patent No. 6 749009, special Japanese The methods proposed in 7- 1 2 1 369, JP 8-211, JP 22, etc. use photoelectrons to remove particles. This method is the same as the method described above using photoelectrons to generate anions, and anion is generated. The generated anions are used to charge the particles, and an electrode is used to capture and remove the charged particles.

HI IHI 313678.ptd 第20頁 550730 五 者 係 捕 料 種 '發明說明（17) 。亦即，本發明中可用之依光電子 ^ ~~~ ::電子釋出材料、紫外線源、電極材=子去除手段， 术材料所構成。光電子釋出材料、紫蚪、荷電微粒子 ，可使用上述之依光電子之陰離子產^源、電極材 材料。 方法中所述之各 荷電微粒子之捕集材料，一 中之集塵板、集塵電極等、各種 $常之荷電裝置 式者，惟亦可有效使用如鋼絲織（ r電過濾機方 ”一二wool)電極般之絲絨狀構造者。 7 (electret)材料亦很適用。 徑篮 =子釋出材料、電極材料、荷電微粒子捕集材料之 適‘組合，可按照被清淨空間之形狀、構造、所需性能、 經濟性等適當決定。例如，光電子釋出材料和電極之位置 及形狀，可按包圍紫外線源、並能將紫外線源、光電子釋 出材料 電極材料以及荷電微粒子捕集材料作成一體化以 有效利用從紫外線源釋出之紫外線、I為使光電子之釋出 及依光電子之微粒子之荷電與捕集有效進行，而考慮形 狀、效果、經濟性等予以適當決定。例如，將棒狀或圓筒 狀之紫外線燈作為紫外線源使用時，如作成紫外線往燈之 圓周方向按放射狀放射，並儘量將此圓周方向之放射狀之 紫外線多照射到光電子釋出材料上，則光電孑之釋出量會 增多。因而’以在將光電子釋出材料配置在與紫外線燈相 對向之圓周方向，並在其對向面設置光電子釋出用之電極 較佳。HI IHI 313678.ptd page 20 550730 The five are the species of catch 'Invention note (17). That is, the photoelectron ^ ~~~ available in the present invention :: an electron emission material, an ultraviolet light source, an electrode material = a sub-removal means, and a technical material. As the photoelectron release material, aster, and charged particles, the above-mentioned photoelectron-based anion source and electrode material can be used. The collection materials of each of the charged particles described in the method, such as the dust collecting plate, the dust collecting electrode, etc., and various types of conventional charging devices, but it can also be effectively used such as wire weaving (r electric filter side). Two wool) electrode-like velvet-like structure. 7 (electret) material is also very suitable. Diameter basket = the appropriate combination of material, electrode material, and charged particle collection material, according to the shape and structure of the cleaned space The required properties, economical performance, etc. are appropriately determined. For example, the position and shape of the photoelectron release material and the electrode can be surrounded by the ultraviolet source, and the ultraviolet source, the photoelectron release material electrode material, and the charged particle collection material can be integrated into one. The conversion is performed by making effective use of the ultraviolet light emitted from the ultraviolet light source, and I, in order to effectively release the photoelectrons, and depending on the charge and capture of the photoelectron microparticles, and make appropriate decisions in consideration of shape, effect, and economy. When a cylindrical ultraviolet lamp is used as an ultraviolet source, if the ultraviolet rays are made to radiate in the circumferential direction of the lamp, and try to use this circumferential direction as much as possible The radiation of ultraviolet rays on the photoelectron emission material will increase the amount of photoelectron emission. Therefore, the photoelectron emission material is arranged in the circumferential direction opposite to the ultraviolet lamp, and on the opposite side. It is better to provide electrodes for photoelectron emission.

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550730 五、發明說明（18) C.離子成份、化學性污染物質之去除 為褚，本發明中施予陰離子產生處理之氣體，較佳 I ^ 除如C1〔 Nox、S〇x般之酸性氣體、如氨等之鹼性 二· i ^離子成伤、或無機物、有機物等之化學性污染物550730 V. Description of the invention (18) C. The removal of ionic components and chemical pollutants is Chu. In the present invention, the gas treated with anion generation is preferred. I ^ Except for acid gases such as C1 [Nox, S0x] And basic pollutants such as ammonia, etc., or chemical pollutants such as inorganic and organic substances

=體而f、，較佳為作成離子成份濃度為1〇Μ…I 一 f g/m以下、特佳為2 # g/m3以下；有機物濃度為10 #g/…以下、較佳為^g/m3以下、特佳為以g/m3以下。10 如此之污染物質去除手段可使用該技術中周知之方法 如’可使用依吸著材料之方法、I光觸媒之方法等 各種方法加以說明如下。 亂 C 1依吸著材料之化學性污染物質之去除手段 本發明中，依吸著材料之化學性污染物質之去除手 段，係在產生陰離子富化氣體時用以捕集並去除 中之如 NUx、HC1、HF、cl2、F2、HBr、Br2^^【 體、以及如氨、胺般之碱性氣體者，而以吸著材料而古、； 要是能有效吸著上述各種酸性及碱性氣體至低 二， 者即可。以此種吸著材料而t，周知有4膠（sit材料 iel)立2石、氧化銘、活性礙、離子交換纖&維 專，/、中，由於活性碳及離子交換纖維之效果之維 可適用在本發明中。特別是，離子交換纖維係依 應而能捕集染物質到低濃冑，由於潔淨度予反 故，2用途適用之…以活性碳而言，可；；= 份而適添附有酸或鹼之添附活性碳。 …捕來成 般而 '' β材料之形狀係可按適當形狀使用，惟= Body and f, preferably to make the concentration of the ion component is 10M ... I-fg / m or less, particularly preferably 2 # g / m3 or less; organic matter concentration is 10 #g / ... or less, preferably ^ g / m3 or less, particularly preferably g / m3 or less. 10 Such a method for removing pollutants can be described using various methods known in the art, such as a method of using a sorption material, a method of photocatalyst, and the like. Membrane C 1 Removal means of chemical pollutants by absorbing materials In the present invention, the removal means of chemical pollutants by absorbing materials is used to capture and remove such as NUx when anion-rich gas is generated. , HC1, HF, cl2, F2, HBr, Br2 ^^ [, and alkaline gas such as ammonia, amine, and so on, but the material is ancient; if it can effectively absorb the above-mentioned various acid and alkaline gases At least the second lowest. With this adsorbent material, it is well known that there are 4 glue (sit material iel), 2 stones, oxide inscription, activity barrier, ion exchange fiber & dimensional, and medium, due to the effect of activated carbon and ion exchange fiber. Dimensions are applicable in the present invention. In particular, ion-exchange fibers are able to capture dyeing materials to low-concentration radon in response. Due to the cleanliness that is reversed, 2 uses are applicable ... In terms of activated carbon, it can be;; = parts are suitable for adding acids or alkalis. Added activated carbon. … Into the general shape ”The shape of the β material can be used in an appropriate shape, but

IM 313678.ptdIM 313678.ptd

第22頁 550730 五、發明說明（19) 言’纖維狀、蜂窩狀之形狀者圓段 想。 考因壓力損失較低之故較理 離子交換纖維，係在天然 合體等之支撐體表面，支撐有陽雜或a成纖維或者此等混 體或者併有陽離子交換基和交換體或陰離子交換 交換纖維，可適用利用接枝聚匕二發二中可用，離子、 J 2是利用放射性接枝聚合法所製造之離子 :之ΐ:如依放射線接枝聚合法，則可利用種種材質及形 < f材以形成離子交換纖維之故。 纖維：士述天然纖維而言可適用羊毛、竭絲等，而以合成 合物作：：適$ ’以烴糸聚ΐ物作為素材者、以含氟系聚 騰'iit材者、或者ϋ醇、聚酿胺、聚醋、聚丙烯 乙埽一 * m维素等:上❹2 Ή合物可使用：聚 聚笨乙：丙烯、聚異丁-稀、'丁烯等之脂肪族系聚合物、 埽基jf P二聚α—甲基苯乙稀等之芳香族系聚合物、聚乙 又，=燒等之脂環式系聚合物、或者此等共聚合物。 埽 二含既系聚合物可使用：聚四氟乙烯、聚二氟乙 物、二，-四氟乙稀共聚合物、四氟乙烯—六氟丙烯共聚合 言=乙稀-六氟丙稀共聚合物等。以任何一種素材而 觸面離子交換體用之支撑體者祗要是與氣體流間之接 積較大，阻力較小之形狀而能容易 ，且機Page 22 550730 V. Description of the invention (19) Those who say 'fibrous, honeycomb-shaped shapes are round segments. The reason is that the ion exchange fiber is more reasonable because of the lower pressure loss. It is on the surface of the support of natural composites. It supports cation or a fiber or these mixtures or has cation exchange group and exchange body or anion exchange exchange. Fiber, which can be used by grafting poly daggers. The ions and J 2 are ions produced by the radioactive graft polymerization method: ΐ: If the radiation graft polymerization method is used, various materials and shapes can be used. f material to form ion exchange fibers. Fiber: Natural fibers can be applied to wool, exhaust silk, etc., and synthetic compounds are used: suitable for those who use hydrocarbons and polymers as materials, those with fluorine-based polymers, or Alcohols, polyamines, polyacetate, polypropylene acetamidine * m vitamins, etc .: Shang ❹2 adducts can be used: polystyrene: polyacrylic, polyisobutyl-dilute, 'butene, etc. aliphatic polymerization Compounds, aromatic polymers such as fluorenyl jf P dimerized α-methylstyrene, etc., alicyclic polymers such as polyethylene, or such copolymers.埽 The two existing polymers can be used: polytetrafluoroethylene, polydifluoroethylene, di-tetrafluoroethylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymerization = ethylene-hexafluoropropylene Copolymers and more. If any kind of material is used to contact the support for the ion exchange body, if the contact with the gas flow is large, the shape of the resistance is small, and the machine can be easily.

550730 五、發明說明 械性強度 小之材料 下，製造 與聚丙烯 對於 而可使用 用鲮基、 有體；一 或併有上 換體等。 酸、甲基 烯、醯氧 化合物、 乙烯基咪 代磺酸、 離子交換 在二乙烯 (20) 較大、 者即可 業者可 之複合 可導入 種種陽 續酸基 級至三 述陽離 具體而 丙烯酸 基苯乙 乙烯基 唾、丙 磺酸等 基之纖 基苯、 無纖維屑之脫 適用，考慮使 適當選擇、惟 材料為理想。 此等素材之離 %子交換體或 、鱗酸基、酚 、級胺基及四級 +交換基及陰 言’在上述纖 '乙烯基苯磺 烯、羥基苯乙 吡啶、2 -曱基- 落及產生較小，熱 用用途、經濟性“、、3較 ^ ^ 〖生、致果等之 通常以使用聚？4寻您 乙烯或聚乙烯 子交換體，並盔姓 Μ ^ “、、特別限制， 3離子父換體。例如，可使 銨灵耸子交換基含 =陰離子基含有體； ==父換基之兩種之離子交 酸、笨乙松使例如，丙烯 本乙烯、鹵甲基苯乙 烯、胺基I乙稀等之苯乙烯 醛、乙二醇二曱 之共存下 本發 換纖維之 按照纖維 之陽離子 理對象氣 在纖維 明中作 纖維徑 之種類 交換基 體中之 烯腈等進行接 進行反應，以 維狀離子交換 二乙稀基苯、 基丙烯酯等之 上進行接枝聚 為化學污染物 為 1至 1000// in 、用途等適當 及陰離子交換 被去除成份之 5一乙烯基吡啶、2一曱基—L ，二合後、視需要使硫酸氯 得具有陽離子交換基或陰 體。又，亦可使上述單體， 丁二烯、乙二醇、二乙烯 具有2個以上之雙鍵之單體合。 貝用吸著材料適用之離子交 、較佳為5至20 0 # m、而可 決定。又，離子交換纖維中 基之種類及導入量，可視虛 種類或濃度決定。例如，預550730 V. Description of the invention For materials with small mechanical strength, it can be used with polypropylene for the use of fluorene-based, solid body; Acids, methylenes, oxo compounds, vinyl imidsulfonic acids, and ion exchange are relatively large in diethylene (20), which can be compounded by the industry and can be introduced into a variety of maleic acid groups. Acrylic styrene ethyl vinyl salivary, propane sulfonic acid and other fiber-based benzene, without fiber shavings are suitable for application, considering appropriate selection, but the material is ideal. The ion exchangers of these materials, or phosphono, phenol, amine, and quaternary + exchange groups and the word "in the above-mentioned cellulose" vinylbenzenesulfene, hydroxyphenethylpyridine, 2-fluorenyl- The production and production are small, the heat use, economical ",, 3 more ^ ^ 〖Health, fruit, etc. are usually used poly? 4 find your ethylene or polyethylene sub-exchange body, and helmet name M ^" ,, Specially restricted, 3-ion parent body. For example, the ammonium ether exchange group can contain an anion group containing body; == two kinds of ionic cross-acids of the parent group, benzylpyrene, for example, propylene ethylene, halomethylstyrene, amine I ethylene In the coexistence of styraldehyde and ethylene glycol, the fiber exchanged according to the cationic physical properties of the fiber is used as the fiber diameter of the fiber exchange in the fiber to exchange the enenitrile in the matrix. Graft polymerization on ion-exchange diethylbenzene, propylene acrylate, etc. Chemical contamination is 1 to 1000 // in, suitable use, etc. and anion exchange removed components 5-vinylpyridine, 2-fluorenyl —L. After the combination, if necessary, make chlorine sulfate with a cation exchange group or an anion. In addition, the above monomers, butadiene, ethylene glycol, and diethylene monomers having two or more double bonds may be combined. The ion exchange suitable for the sorbent material is preferably 5 to 200 # m, and can be determined. The type and amount of the substrate in the ion exchange fiber can be determined depending on the virtual type or concentration. For example,

550730 五、發明說明（21) 先測定·評估氣體中之被去除 子交換基之種類及量即可 成份，並使用與其相符之離 例如，如欲去昤給她氣體時， 可使用具有陽離子交換基者、欲去除酸性氣體時，可使用 具有陰離子交換基者、欲處理混合有兩者之氣體時，則可 使用具有陽離子及陰離子兩種之交換基之纖維。 以對離子交換纖維之氣體之流動方式而言，如對過濾 · 布狀之離子交換纖維按氣體成垂直相交之方式流動較有 效。對離子交換纖維流動氣體之流速，可進行預備試驗而 適當決定之，惟由於離子交換纖維之氣體成份之去除速度 快速之故，通常以SV (空間速度）計，可以1，0 0 0至 1 0 0, 0 0 0 (h—1)程度使氣體流動。如離子交換纖維使用如本 發明人等曾經提出之利用放射線接枝聚合法所製造者，則 效果特高之故，可適用（曰本特公平5 - 9 1 2 3號、特公平 5-67235號、特公平5-43422號、特公平6-24626號等）。藉 由放射線接枝聚合而使離子交換基導入纖維素材（支樓 體），則因對支撐體之放射線之照射將均勻照射到最内 部，而離子交換體將在廣闊之面積按高密度堅固地附加上 去之故，離子交換容量將增大。因而，低濃度之氣體成份 亦可以快速高效率去除。又，藉由放射線接枝聚合之離子 交換纖維之製造具有：可使用接近製品之形狀之素材進行 製造、能在室溫下製造、能在氣相中進行製造、可設定接 枝率為較大值、可形成不純物較少之吸著過濾器、等之f 點。因而，由於在利用放射線接枝聚合法所製造之離子父 換纖維上，按均勻且高密度方式大量附加有能發揮氣體成550730 V. Description of the invention (21) First measure and evaluate the type and amount of the removed exchangeable group in the gas, and use the corresponding ion. For example, if you want to remove the gas to her, use cation exchange If you want to remove acid gas, you can use an anion exchange group, and if you want to treat a gas mixed with the two, you can use a fiber with two types of cation and anion exchange groups. In terms of the gas flow mode of the ion exchange fiber, it is more effective to filter the cloth-shaped ion exchange fiber in such a way that the gas intersects vertically. The flow rate of the gas flowing through the ion exchange fiber can be appropriately determined by preliminary tests, but because the gas component of the ion exchange fiber is removed at a high speed, it is usually measured in SV (space velocity), which can be 1, 0 0 0 to 1 0 0, 0 0 0 (h-1) to make the gas flow. If ion-exchange fibers are manufactured by using the radiation graft polymerization method as previously proposed by the inventors, the effect is particularly high, and it can be applied (say Ben-Tex Fair No. 5-9 1 2 3, No. 5-67235 Number, special fair number 5-43422, special fair number 6-24626, etc.). The ion exchange group is introduced into the fiber material (branch body) by radiation graft polymerization, and the radiation of the support body will be evenly irradiated to the innermost part, and the ion exchange body will be solid and solid at a high density in a wide area. In addition, the ion exchange capacity will increase. Therefore, low-concentration gas components can be removed quickly and efficiently. In addition, the production of ion-exchange fibers by radiation graft polymerization has the following characteristics: it can be manufactured using materials close to the shape of the product, it can be manufactured at room temperature, it can be manufactured in the gas phase, and the grafting rate can be set to be large Value, can form f-points with less impurities, sorption filters, etc. Therefore, since the ion-exchange fiber manufactured by the radiation graft polymerization method is uniformly and densely added in a large amount, it can exert a gaseous effect.

550730 五、發明說明（22) 份之吸著功能之部份之離子交換體之故， 速度快速，吸著量較多。再|，可形成壓力^份之吸著 濾材料。 知失較低之過 又，視所需規格，由破璃及氟樹脂所形 ^ 例如，將氟樹脂作為黏合劑之玻璃纖維過濾 吸著剡 本發明中之化學污染物質去除用材料。如：：亦可適用為 對氣體狀之有機物、及粒子狀物質之同 J濾布，係 特許258280 6號）。 ％有效（曰本 C-2 :使用光觸媒之化學性污染物質之去 使用光觸媒以去除氣體中之化學污染晰 多又 3用於待去除之氣體成份含有如酞酸醋般之，係 日守。如D0P(鄰苯二甲酸二辛） 有機物（H.C.) 分子量H.C.，係如吸著在基面之時鄰會基引—起甲酸醋般之高 . 亦即可罪度之下降等生產性及良率tnr胳> 故，需要去除。 '"半之下降之 匸=為光觸媒者，祗要是能被光照射所激勵， 可俅=換為如％及10等般對基板形成安定之形刀 材料係右4 i以光觸媒而5，由於半導體 明中。、如二虐：：易取：’加工性亦* ’故極適用於本發 。、如^慮效果及經濟性時，較佳為以（碼）、^(鍺）、550730 Fifth, the invention explains that (22) part of the ion-exchanger with adsorption function is fast and has a large adsorption capacity. Again, a pressure filter material can be formed. The loss of knowledge is relatively low. Depending on the required specifications, it is shaped by broken glass and fluororesin. For example, glass fiber filtration using fluororesin as a binder. Adsorption 剡 The material for removing chemical pollutants in the present invention. For example: It can also be applied to the same J filter cloth for gaseous organic matter and particulate matter, which is No. 258280 6). % Effective (Japanese C-2: Use of photocatalysts for chemical pollutants. Use photocatalysts to remove chemical contamination from gases. 3) The gas components to be removed contain phthalic acid-like vinegar. Such as D0P (dioctyl phthalate) organic matter (HC) molecular weight HC, such as when the absorption on the base surface will lead to the base-as high as formic acid vinegar. That is to say, the degree of productivity and good decline Therefore, it needs to be removed. '&Quot; Half of the drop 匸 = is a photocatalyst, if it can be excited by light irradiation, 换 = change to a stable shape of the substrate such as% and 10 The material is right 4 i with photocatalyst and 5, because the semiconductor is bright., Such as secondary abuse :: Easy to take: 'Processability is also *', so it is very suitable for the hair. When the effect and economy are considered, it is preferred With (code), ^ (germanium),

Sb(銻）Cu、A1、Sn、Ga(鎵）、In、P、AS(砷）、 C〇(2 :、Cd(鎘）、S(硫）、Te(錄）、Ni (鎳）、Fe(鐵）、 —種丨^⑽（絡）Hb之任 或此專化合物或者合金或者氧化物，此等可以單獨Sb (antimony) Cu, Al, Sn, Ga (gallium), In, P, AS (arsenic), C0 (2 :, Cd (cadmium), S (sulfur), Te (record), Ni (nickel), Any of Fe (iron), ^^ (complex) Hb or this special compound or alloy or oxide, these can be separate

550730 五、發明說明（23) 或複合2種以上使用。 例如，元素可舉：Si、Ge、Se、化合物可舉：Alp、550730 5. Description of the invention (23) or more than 2 types of compound. For example, the elements are: Si, Ge, Se, and the compounds are: Alp,

AlAg 、 GaP 、 AlSb ' GaAs 、 InP 、 GaSb 、 InAs ' InSb 、AlAg, GaP, AlSb 'GaAs, InP, GaSb, InAs' InSb,

CdS、CdSe、ZnS、MoS2、WTe2、Cr2Te3、MoTe、（]u2S、WS2 等，氧化物可舉Ti02、Bi 203、CuO、Cu20、ZnO、m^)03、' In03、Ag20、PbO、SiTi03、BaTi03、Co3〇4、Fe2〇3、Ni〇 等。又，視適用對方之情況，可將金屬材料予以燒成以在 金屬材料表面形成光觸媒。例如，可將T i材料在丨〇 〇 〇下 燒成’並在金屬材料表面形成Ti〇2以製造光觸媒（特開平 1 1 -9 0236號）。又，如對上述光觸媒材料上，添加(白 金）、Ag、Pd(鈀）、Ru(釕）〇2、c〇3〇4般之物質使用時， 於可促進因光觸媒所引起之H.c•分解作用之故較理相。此 等添加劑可以-種或組合複數種使用。添 觸媒之0 · 0 1至1 0重量％，而始、天4仏供 、中苟尤 性浐篝谁扞fi借泰物質之種類或所需要之 此等進盯預備貝驗以適當選擇適 添加之方法可使用：含浸法度。.又、’添加劑之 練法等之物理性技術。 ：、賤鍍沈積法、混 光觸媒之設置形離，总π ‘， 之空間中之固定化、對氣體二叙為對被處理氣體所流動 固定化之方式，或使流路中之牆壁面上之 方式。光觸媒之固定化，體所流動之空間中之 狀、線狀、紡絲狀、網狀先觸媒塗佈在板狀、絲 材料，或以此等材料包裏赤。狀、膜狀、片材狀等適當 可將任意之光觸媒材料對^咨住並固定在裝置内。例如， 一、金屬、氟樹脂、破填材 313678.ptd 550730 五、發明說明（24) 料’適當使用溶膠-凝膠（S〇1-gel)法、燒結法 '沈積法、 賤鍛法等周知之附加手段使其固定化。使光觸媒固定化之 材料而言，一般以纖維狀、網狀、蜂窩狀之形狀，其壓力 損失較低之故較理想。例如，可使用溶膠—凝膠法/將 Ti〇2(二氧化鈦）附加到玻璃纖維者，或將穿透 恭日日击々尸祕士 \ β 、不狩開干7〜2 5 6 0 89號）作為本 七月中之乳體中之化予污染物質去除用手段 本發明中，作為對光觸媒施行光照射 是因對'朵網碰> 土 光源者’抵*要 疋U對先觸媒之光妝射而光觸媒能 限定，而W松田闽千尤觸媒作用者均無 之分解，传叮t ^ :總、’源。亦即，因光觸媒作用之Η. C· 吸收波長:m 媒照射由光觸媒之種類所決定之光 ^ I - “之下使被處理氣體接觸光觸媒而進行。 列。光觸媒材料之主要光吸收波長區域，係如下所 δι:<1, 100 (m) ；Ge:<l, 825 (nm) ;Se：<590 (nm) ; A 1 A s : < 5 1 7 (nm) ; A 1 S b : < 8 2 7 (nm) ； G a A s : < 8 8 6 (nm) ； I η P : < 9 9 2 (nm) ; I n S b : < 6, 8 8 8 (nm) ; I nCdS, CdSe, ZnS, MoS2, WTe2, Cr2Te3, MoTe, () u2S, WS2, etc. The oxides can be Ti02, Bi 203, CuO, Cu20, ZnO, m ^) 03, 'In03, Ag20, PbO, SiTi03, BaTi03, Co304, Fe203, NiO and the like. In addition, if applicable, the metal material may be fired to form a photocatalyst on the surface of the metal material. For example, the T i material can be fired at 丨 00 00 ′ and Ti02 formed on the surface of the metal material to manufacture a photocatalyst (Japanese Patent Application Laid-Open Nos. 1 1 to 9 0236). In addition, the use of materials such as (platinum), Ag, Pd (palladium), Ru (ruthenium) 02, and c0330 as the photocatalyst material can promote Hc • decomposition due to photocatalyst. The reason is more reasonable. These additives may be used singly or in combination. Add catalysts from 0 · 0 1 to 10% by weight, and the beginning and the end of the day will be provided, and the special nature will be maintained. Whoever defends the types of materials used by Thailand or the required preparation for these inspections can be appropriately selected. Suitable methods can be used: impregnation method. Also, physical techniques such as the training of additives. :, Base plating deposition method, mixed photocatalyst setting, total π ', the immobilization in the space, the second method for gas, the method for immobilizing the flow of the processed gas, or the wall surface in the flow path Way. The photocatalyst is immobilized, and the shape, thread, spinning, and mesh of the space in which the body flows is coated on the plate-shaped, silk material, or covered with these materials. The shape, film shape, sheet shape, etc. are suitable, and any photocatalyst material can be held and fixed in the device. For example, 1. Metal, fluororesin, broken filler 313678.ptd 550730 5. Description of the invention (24) Material 'appropriate use of sol-gel (S〇1-gel) method, sintering method' deposition method, base forging method, etc. Known additional means to immobilize it. Materials for immobilizing photocatalysts are generally fibrous, net-like, and honeycomb-shaped, and their pressure loss is relatively low. For example, you can use the sol-gel method / those who attach Ti〇2 (titanium dioxide) to the glass fiber, or pass through the sun to kill the corpse clerk \ β, do not hunt to dry 7 ~ 2 5 6 0 89 ) As a means to remove contaminated substances in the milk body in the middle of July In the present invention, the light irradiation as a photocatalyst is due to the impact of the 'dot net touch> earth light source' * It is necessary to use the first catalyst The light makeup can be shot and the photocatalyst can be limited, but none of the W Matsuda Minqianyou catalysts can be decomposed. That is, due to the role of photocatalysts. C. Absorption wavelength: m The medium is irradiated with light determined by the type of photocatalyst ^ I-"Under the treatment of the gas to be contacted with the photocatalyst. Column. The main light absorption wavelength region of photocatalyst materials , As follows: < 1, 100 (m); Ge: < l, 825 (nm); Se: < 590 (nm); A 1 A s: < 5 1 7 (nm); A 1 S b: < 8 2 7 (nm); G a A s: < 8 8 6 (nm); I η P: < 9 9 2 (nm); I n S b: < 6, 8 8 8 (nm); I n

As: <3， 7 5 7 (nm) ;CdS:<52〇 (nm) ；CdSe :<730 (nm) ; Μ o S 2 ： < 5 8 5 (nm) ； Z n S : < 3 3 5 (nm) ; T i O 2 : < 4 1 5 (nm) ; Z n 〇：< 4 〇〇（) ； Cu20 ： < 6 2 5 (nm) ; P b O : < 5 4 〇 (nm) ; B i 2〇3 : < 3 9 0 (nm)。 為進行對光觸媒之照射所用之光源，祗要是能具有光 觸媒之光吸收區域之波長者即可，而可適當使用周知者， 例如可使用太陽光、紫外燈等。以紫外線源而言，通常As: < 3, 7 5 7 (nm); CdS: < 52〇 (nm); CdSe: < 730 (nm); M S 2: < 5 8 5 (nm); Z n S: < 3 3 5 (nm); T i O 2: < 4 1 5 (nm); Z n 〇: < 4 〇〇 (); Cu20: < 6 2 5 (nm); P b O: < 54 (nm); B i 2 03: < 390 (nm). In order to irradiate the photocatalyst with a light source, it is only necessary to have a wavelength capable of absorbing the light in the photocatalyst region, and a well-known person may be used as appropriate, such as sunlight or ultraviolet light. For UV sources, usually

313678.ptd 第28頁 550730 五、發明說明（25) --- 可適當使用水銀燈 '氫放電管、氙（Xe)放電管、萊遥 \Lyman)放電管等。以光源之具體性形態而言，可使a用殺 菌燈、黑光燈、螢光化學燈、UV — B(中波紫外線 燈氙燈等。其中，殺菌燈（主波長254nm)，係由於因可 增強對光觸媒之有效照射光量之故可增強光觸媒作用、 臭氧二可簡單安裝、廉價且保養、管理、維護較容易、ς、 能較高，等理由而特別適用。對光觸媒之照射量，一 0·05 至 50mW/cm2，較佳為 〇1至1〇1^/〇1112。 又… H· C·可依吸著材料，例如活性碳之使用而捕集， ，吸=材=時，有吸著容量及轉效之問題。亦即，如產 氣體濃度高時，由於在短時間内吸著容量會飽和之故 新時費工，又有因轉效之捕集物流出所引起之二次污丄， ，題。相對於此，光觸媒並無H· c•之堆積，而能長時=… 定分解Η _ C之故，在本發明中可作為H _ c，等之化 九= 質去除之極佳手段。 ^乐物 其次，在本發明中，就陰離子生成上重要之 加以說明。 物，辰度 氣體中之水份，將在本發明之陰離子生成機構中扮广 重要角色。因而，由於氣體中之水份濃度之控制，可言= 率製得基板之氧化抑制上有效之陰離子。 μ 特別是依光電子法及放電法之陰離子之生成機構， 能是因所產生之電子藉由與電子親和性較大之水份子二 份子間之電子附著或凝聚化（clustering)，而形成〇 f ^ )η、〇-(Η20)η、ΟΗ-^Ο)^之陰離子凝聚。此等反應，係^313678.ptd page 28 550730 5. Description of the invention (25) --- Mercury lamps' hydrogen discharge tubes, xenon (Xe) discharge tubes, Laiyao \ Lyman) discharge tubes, etc. can be used appropriately. In terms of the specific form of the light source, a germicidal lamp, black light, fluorescent chemical lamp, UV-B (medium-wave ultraviolet lamp xenon lamp, etc.) can be used. Among them, the germicidal lamp (main wavelength 254nm) is because it can enhance The effective irradiation of light to the photocatalyst can enhance the photocatalyst effect, ozone can be easily installed, cheap and easy to maintain, manage, maintain, maintain high, etc. It is particularly suitable for reasons such as exposure to the photocatalyst, a 0 · 05 to 50 mW / cm2, preferably 〇1 to 1〇1 ^ / 〇1112. And ... H · C · can be captured according to the use of absorbing materials, such as activated carbon, absorbing = material = when there is absorbing The problem of capacity and transfer efficiency. That is, if the concentration of the produced gas is high, the absorption capacity will saturate in a short period of time, so it will take time and labor, and there will be secondary pollution caused by the conversion of the capture stream.丄,,. In contrast, photocatalysts have no accumulation of H · c •, but can be used for a long time =… definite decomposition C _ C, in the present invention can be used as H _ c, etc. = mass removal An excellent means. ^ Fun thing Secondly, in the present invention, it is important to describe the anion generation The water content of the substance and the Chen gas will play an important role in the anion generating mechanism of the present invention. Therefore, due to the control of the water concentration in the gas, it can be said that the oxidation inhibition of the substrate produced by the method is effective Anion. Μ, especially the anion generating mechanism based on the photoelectron method and the discharge method, can be formed by the generated electrons being attached or clustered by the electrons between the halves of the water molecules with greater electron affinity. 0f ^) η, 0- (Η20) η, 0Η- ^ 0) ^ anion condensed. These reactions are

313678.ptd 550730 五、發明說明（26) 示如下0 〇2+ e — 〇2— 02—+ H20 — 〇2_(H20) H20 -> 02-(H20)n 從上述之式可知，藉由電子而接受電荷之水份將成陰 離子。因而，如有與氣體中之水份濃度相對應之電子供給 (e 1 e c f r ο n d ο n a t e )時，則不需要水份濃度之控制。然 而，如產生電子之濃度低時，則成為將釋出對晶圓有害之 具有所謂氧化作用之水份之情況，而對晶圓有不良影響。 如此之有害水份之存在，可由曝露在氣氛中之晶圓表面之 氧化狀態，例如檢查自然氧化膜之形成狀況等而掌握。如 此方式檢測到有害水份之存在時，以施行除濕到適當濃度 為止較佳。在以去除有害水份為目的之除濕情形下，係將 氣體之相對濕度除濕到45± 5%程度，較佳為30%以下， 更佳為20%以下。氣體之除濕可適當採用周知之方法，在 本發明中則一般在陰離子產生之前施行較理想。 以本發明中可採用之除濕手段而言，可使用冷卻式、 吸著式、吸收式、壓縮式、膜分離式等周知之方式者，而 按本發明之適用部份或裝置之規模、形狀、使用條件、例 如依在大氣壓下或在加壓下等之條件適當施行預備試驗， 而可採用上述之1種或組合2種以上使用。在此，除濕手段313678.ptd 550730 5. The description of the invention (26) is shown as follows: 0 〇2 + e — 〇 02 — + H20 — 〇 2_ (H20) H20-> 02- (H20) n From the above formula, we can know that The water that accepts the charge as an electron will become an anion. Therefore, if there is an electron supply (e 1 e c f r ο n d ο n a t e) corresponding to the water concentration in the gas, the control of the water concentration is not required. However, if the concentration of the generated electrons is low, it may cause the so-called oxidizing water which is harmful to the wafer, and adversely affect the wafer. The existence of such harmful moisture can be grasped by the oxidation state of the wafer surface exposed to the atmosphere, such as checking the formation of a natural oxide film. When the presence of harmful moisture is detected in this way, it is better to perform dehumidification to an appropriate concentration. In the case of dehumidification for the purpose of removing harmful moisture, the relative humidity of the gas is dehumidified to about 45 ± 5%, preferably 30% or less, and more preferably 20% or less. The dehumidification of the gas can be performed by a well-known method. In the present invention, it is generally preferred to perform the dehumidification before the anion is generated. As for the dehumidifying means that can be used in the present invention, known methods such as a cooling type, an absorption type, an absorption type, a compression type, and a membrane separation type can be used, and according to the scale and shape of the applicable part or device of the present invention And conditions of use, such as performing a preliminary test as appropriate under conditions such as atmospheric pressure or pressure, and one or more of the foregoing may be used in combination. Here, dehumidifying means

313678.ptd 第30頁 550730 五、發明說明（27) _ 通常以採用數月至半年以上可長期 —^ /土，杖芯丨日 、入欠η上的从 疋維持除濕性能者較 仏 特別疋’ ν部式、吸著式或膜分離式者較簡易而有 效。以冷卻式之除濕手段而言，由於構造小型且效率高， 故，採用電子除濕方式、冷卻盤管（cooli118 c〇il)方式車乂 ,田相 二、，Λ益, 丄妗簡易且效率高之 理想，而以吸者式之除濕手段而言，由於 ^ ^ ^ . 於田、仓/ - ^、月iβ &么下能長時間繼續 故，抓用進仃除濕和除濕器本身之再生l — 、 除濕之方式（固定式、旋轉式）較理想。在吸=^除濕手， 中可用之除濕材料可例舉··矽膠、沸石，沽^碳、活性氧 化鋁、過氯酸鎂、氯化鈣、氯化鈣、•一父f黏土 f孔 體、構造狀活性碳、多孔質碟酸铭等。#纟θ氧化铭父聯 黏土多孔體，係將層狀石夕酸鹽層間之交換丨生&離子使用3 有鋁之多核金屬氫氧化離子進行交換，炎將=加熱脫水 者。又，構造狀活性碳，係將聚乙稀醇雜J , • 1 ^ 1k m V I；乂下之》皿度使其活 vinyl formal)進行碳化處理，在850 C以 ^ 说公子師〔molecular 化所得者。多孔質磷酸鋁，係稱為所細々 ^ ^ , sleves^者，係將氳氧化紹、勃姆石之有機碱等 石等之氧化銘水合物及碌酸，使用如> 又，依水破碎之陰離子產生法中 機 霧）而產生所謂水霧之故，必須使用脫女段以去除有宏之 (eliminator)、加熱盤管等周知之除滋 "之 水份0 、、 愈子耋以空間所泪! J定 上述之除濕，係通常在氣體中之地，如電流 之電流值計為〇 · 1 p A以下時所進行者’才 之熱離解性模板劑並使其反應而製得者由於因水破碎（嗔313678.ptd Page 30 550730 V. Description of the invention (27) _ Generally, it can be used for several months to more than half a year, which can be used for a long period of time. ^ / Soil, rod core, day, indebted η to maintain dehumidification performance is more special. 'ν part type, adsorption type or membrane separation type is simple and effective. As for the cooling type dehumidification means, because of its small structure and high efficiency, the electronic dehumidification method and the cooling coil (cooli118 coil) method are adopted. 田田 田 二, 益 益, 丄 妗 is simple and efficient. Ideally, in terms of the suction-type dehumidification method, since ^ ^ ^. Yutian, Cang /-^, Yue iβ & can continue for a long time, so use the dehumidifier and regeneration of the dehumidifier itself l —, Dehumidification (fixed, rotary) is ideal. Examples of dehumidifying materials that can be used in suction = ^ dehumidification hands include silica gel, zeolite, carbon, activated alumina, magnesium perchlorate, calcium chloride, calcium chloride, and a parent f clay f pores. , Structure-like activated carbon, porous disc acid name, etc. # 纟 θ Oxide Minglian Clay porous body is used to exchange the exchange of layered fossilate ions and ions with 3 polynuclear metal hydroxide ions with aluminum. The inflammation will be heated and dehydrated. In addition, the structure-like activated carbon is made of polyvinyl alcohol J, • 1 ^ 1k m VI; His Majesty ’s degree is used to make it a living vinyl formal), and the carbonization treatment is performed at 850 C. The winner. Porous aluminum phosphate, which is referred to as 々 ^^, sleves ^, is oxidized hydrates and sulfonic acids such as thorium oxide, organic alkali such as boehmite, etc., and is crushed by water For the so-called water mist generated by the anion generation method), the female part must be used to remove the well-known water eliminators such as eliminator and heating coils. The water content is 0, and the more water is used. Tears! J determined that the above dehumidification is usually performed in a place in the gas, such as when the current value of the current is below 0.1 p A, and it is made by reacting the thermally dissociable template agent. Due to broken water (嗔

313678.ptd 第31頁 550730 五、發明說明（28) 在0. 1 P A以上時，則較佳為進行對氣體之加濕以生成附加 有多量水分子之陰離子。加濕作業，係可採用依水份之加 熱器之加熱、依氣化、超音波之喷霧、依膜之供給等，依 該技術中周知之手段施行。在此，如依加濕而對氣體添加 水份時，未參與陰離子之生成之多餘之水份，以如上述方 式依脫去機或加熱盤管等之除濕手段予以去除者較佳。 如上所述，適當採用加濕手段及除濕手段，即可以適 當之水份濃度形成氧化抑制上有效之負離子富化氣體。亦 即，藉由適當之水份濃度之控制，即可將適當量之水份作 為陰離子源有效利用。 另外，為使產生陰離子以形成陰離子富化氣體之用之 氣體，而可使用如N2或Ar (氬）等惰性氣體，惟此等惰性氣 體一般係乾燥者，而由於不能直接有效進行陰離子之生成 之故，而以依上述之加濕手段進行水份之添加者較佳。究 竟添加多少量之水份添加，則可依陰離子產生法、所需規 格等適當進行預備試驗後決定。 其次，參照圖面之下，說明本發明之半導體製造裝置 之幾種具體形態。 第1圖，係表示在半導體工廠（潔淨室、等級10, 000) 中在半導體基板上之特定製程。本發明可適用在第1圖所 示之各特定製程處理。亦即，本發明之半導體製造裝置， 係由如下所說明之陰離子富化氣體調整裝置、及將由該裝 置所調整之陰離子富化氣體在第1圖所示之各種特定製程 之半導體處理裝置中供給基板表面之供給手段所構成。例313678.ptd page 31 550730 V. Description of the invention (28) When it is above 0.1 PA, it is preferred to humidify the gas to generate anions with a large amount of water molecules. Humidification can be carried out by means of heating by a water heater, vaporization, ultrasonic spraying, film supply, etc., according to well-known means in the technology. Here, if moisture is added to the gas by humidification, the excess moisture that does not participate in the generation of anions is preferably removed by dehumidifying means such as a descaler or a heating coil, as described above. As described above, by appropriately using the humidifying means and the dehumidifying means, an appropriate moisture concentration can be used to form a negative ion-enriched gas effective for oxidation inhibition. That is, by controlling the appropriate water concentration, an appropriate amount of water can be effectively used as an anion source. In addition, in order to generate anion to form an anion-enriched gas, an inert gas such as N2 or Ar (argon) can be used, but these inert gases are generally dry, and because anion generation cannot be directly and effectively performed For this reason, it is preferable to add water by the humidifying means described above. The exact amount of water to be added can be determined after appropriate preliminary tests according to the anion generation method and required specifications. Next, several specific forms of the semiconductor manufacturing apparatus of the present invention will be described with reference to the drawings. Figure 1 shows a specific process on a semiconductor substrate in a semiconductor factory (clean room, class 10,000). The present invention is applicable to each specific process shown in FIG. That is, the semiconductor manufacturing apparatus of the present invention is provided by an anion-rich gas adjustment device described below, and the anion-rich gas adjusted by the device is supplied to a semiconductor processing device of various specific processes shown in FIG. 1. It is constituted by the supply means on the substrate surface. example

313678.ptd 第32頁 550730 五、發明說明（29) 如，將具備有以下所說明「 及「將所調整之陰離子皆务離子畐化氣體調整裝置 段」之裝置，與可在第軋_體供給基板表面之供給手 燥」之過程使用之「將/所不之「基板之清淨化及乾 燥基板表面之裝置」之：合嘴J =上以空氣洗淨及乾 行基板之清淨化與乾燥。 9在抑制基板之氧化下進 第2圖中，矣千士· 除手段及依過濾'機之微粒子依去吸r著手材/之化學咖 裝置、及依放電法之降離除手奴而成之清淨氣體調整 之-狀態之陰離子富：氣 所構成之有關本發明 如此之裝i，即可調整尨笪調整裝置之概略構成圖。使用 份之陰離子富化氣體(為等子級下而不含有化學污染成 1圖所示之各特定製造子；：半0^ 本實施例中所調製之& 將4導體基板表面曝蕗於 半導體基板之污染防I子畐化氣體之下進行，即可達成 、、爭官第Λ圖所田示之陰離子富化氣體調整裝置a，係、由為對节 染物用之嗯签从ΐ機為去除潔淨室空氣中之化學污 潔淨室空5 r室材枓（離子交換纖維及活性碳）21、為去除從 工轧等級10，000)中之微粒子及排風機20所發生之 -；立子，之除塵過濾機（ULpA過濾機）22、為產生陰離子用 之放^部（電量放電）23、為去除從放電部㈡所產生之w用 之〇3分解·去除材料24所構成。圖中，25-1表示因排風機 20而導入陰離子富化氣體調整裝置A之空氣之流動、25-2 表不、經由陰離子富化氣體調整裝置A所調整之陰離子富化313678.ptd Page 32 550730 V. Description of the invention (29) For example, it will be equipped with the following description "and" the adjusted anion shall be an ionized gas deionizing gas adjustment device section "device, and the The process of "supplying hand dryness on the surface of the substrate" used in the "device for cleaning and drying the substrate surface": the nozzle J = the air is cleaned and the substrate is cleaned and dried. . 9 In the second picture, the oxidation of the substrate is suppressed, and the removal method and the filter of the particles of the filter are used to absorb the material and the chemical coffee device, and the discharge method is used to remove the slave. Regarding the clean gas adjustment, the state of the anion-rich: gas is related to the present invention, so that the general configuration diagram of the adjustment and adjustment device can be adjusted. Use parts of anion-enriched gas (for the equivalent sub-levels without chemical contamination to each specific manufacturing factor shown in Figure 1): half 0 ^ Modified in this example & Expose the surface of the 4 conductor substrate to Contamination prevention of semiconductor substrates can be carried out under the tritium gas, and the anion-rich gas adjustment device a shown in Figure Λ can be achieved. In order to remove the chemical pollution in the clean room air, clean room space 5 r room material (ion exchange fiber and activated carbon) 21, to remove particles and bleeder 20 from the work roll grade 10,000- It is composed of a dust removal filter (ULpA filter) 22, a discharge unit (electric discharge) 23 for generating anions, and a 03 decomposition / removal material 24 for removing w generated from the discharge unit ㈡. In the figure, 25-1 indicates the flow of air introduced into the anion-rich gas adjustment device A due to the exhaust fan 20, and 25-2 indicates the anion-richness adjusted by the anion-rich gas adjustment device A.

313678.ptd 第33頁 550730 五、發明說明（30) 氣體之流動、26表示陰離子。第2圖之放電部23中，23^ 表示針狀之放電電極' 23-2表示對向電極。 第2圖所不之陰離子富化氣體調整裝置，因排風 所導入之潔淨室空氣（微粒子濃度為等級1〇, 〇〇〇、而陰離 子濃度為100個/mL以下者），首先，將通過化學污染物 ΐ ϊ ϊ ΐ材21及微粒子去除過濾、機2 2而被清淨化為微粒子 7為等級10以τ、離子成份濃度Α有機 f子之產生，並依臭氧分解.去除材料24去 ，氣即可提供陰離子濃度為1〇〇,〇〇〇個/(^上、 =下級，二、：：成份濃… 资驴六、乳濃度為〇.〇lppm以下之潔淨之陰離子舍斗 =體。將此陰離子富化氣體，用 -離子田化 基板曝露用之氣體，即可淮并各種1程中之 可進行經防止微粒子污染及化：5軋：抑制之同時’亦 第3圖表示由依吸著材料/:粒以：二導體製造處理。 ::整裝1、及依光電子法之 ：口：：淨氣 ，本發明之其他形態之陰離子富化氣體構成之有 成圖。第3圖中，對與第2圖同樣 =裝置之概略構 參照符號表示，並省略其說明。 牛，係附以相同 與、· = 3圖所不之陰離子富化氣體調 染物去除吸著材料21及微粒 置A二備有··由化 、;月淨化裝置、及由光電子釋 除='機22所構成之 形成用t極29所構成之陰離子產^ 7晋=卜線燈28、電場 第3圖所示之陰 _ 313678.ptd _ 第34頁 550730 離 氣 五、發明說明（31) ~ '----^_ 子調整裝置A中，由排風機所導 ，將=;學污染物去除吸著材料21及微粒子去除至; :U ϊ Γ淨化為微粒子濃度為等級10以下、離子成； 生ΐ置在=濃度均為2" g/m3以下後，被導入陰離子產77 照射紫外線，即可釋* 微粒子濃度為C度為10, _個/mL以上、 為2/z g/m3以下之、絮 I、離子成份濃度及有機物濃度均 電子法時，由於I、=陰離子富化氣體。在此’如依光 所示般之臭氧去2 =故，通常不需要如第2圖 整置A所調整之陰離早& t由弟3圖之陰離子富化氣體調 為基板曝露用之\ 备化氣體，在第1圖之各種製程中作 時，亦可進行經m p可進行基板之氧化抑制之同 處理。、方止微粒子污染及化學污染之半導體製造 第4圖表示由· 段及依光電子法之與4又吸著材料之化學污染物質去除手 裝置、及與第3圖；立子去除手段所構成之清淨氣體調整 構成之有關本發明W之#依光電子法之陰離子產生裝置所 之概略構成圖。if岡八占他形態之陰離子富化氣體調整裝置 附以相同參照符號表θ厂、，對與第3圖同樣之構成構件，係 化學污染物去除/著離子2ι畐化氣體調整裝置A具備有由：由 線燈4 2、電場彤点 ，由光電子釋出材料41、紫外 構成之微粒子^ ^丰，極43以及荷電微粒子捕集材料44所 ’于、午#又而成之清淨氣體調整裝置 '及由光313678.ptd Page 33 550730 V. Description of the invention (30) The flow of gas, 26 represents anion. In the discharge section 23 in FIG. 2, 23 ^ indicates a needle-shaped discharge electrode 23 ′ indicates a counter electrode. The anion-enriched gas adjusting device shown in Fig. 2 is the clean room air introduced by the exhaust air (the concentration of fine particles is level 10,000 and the concentration of anion is 100 / mL or less). First, it will pass Chemical pollutants ΐ ϊ ΐ ΐ 21 21 and fine particles are removed and filtered, and machine 2 2 is cleaned into fine particles 7 as a grade 10 with τ, ionic component concentration Α organic f particles are generated and decomposed by ozone. Remove material 24 to go, Gas can provide anion concentration of 100,000, / (^ upper, = lower, two, ::: concentrated ingredients ... 驴 六, clean anion with milk concentration below 0.001ppm = body . This anion-enriched gas is exposed to the ion-ionized substrate, which can be used to prevent and contaminate microparticles in a variety of processes: 5 rolling: at the same time as inhibition. Also shown in Figure 3. Material /: Grain: Two-conductor manufacturing process. :: Package 1, and according to the photoelectron method: Mouth :: Net gas, the other form of the anion-rich gas of the present invention is formed. Figure 3, Same reference as in Figure 2 It is shown, and its description is omitted. Cattle, attached with the same and, == 3 anion-rich gas-dye removing and adsorbing material 21 and microparticles A, which are not shown in the figure. And anion production consisting of photoelectron release = 'machine 22 and t pole 29 for formation formation ^ 7 Jin = Bu wire lamp 28, the yin shown in Figure 3 _ 313678.ptd _ page 34 550730 out of gas V. Description of the invention (31) ~ '---- ^ _ In the sub-adjustment device A, guided by the exhaust fan, the chemical pollutants are removed from the adsorbent material 21 and the fine particles are removed to: U ϊ Γ is purified into fine particles Concentration is below grade 10, ion formation; after the biogas is set to = concentration is less than 2 " g / m3, it is introduced into anion to produce 77, and it can be released by irradiation with ultraviolet rays * The concentration of microparticles is C degree 10, _number / mL or more When the electron concentration is below 2 / zg / m3, the floc I, ion component concentration, and organic matter concentration are all electron methods, because I, = anion-enriched gas. Here, as shown by the light, the ozone goes to 2 =, so usually It is not necessary to adjust the yinlizao as shown in Figure 2 to set A. The anion-rich gas in Figure 3 is used for substrate exposure. The gas can be processed in various processes in Figure 1. It can also be used for the same treatment of substrate oxidation inhibition by mp. Semiconductor manufacturing to prevent fine particle pollution and chemical pollution. Figure 4 shows the · by paragraph and by the optoelectronic method Figure 4 shows a schematic diagram of a device for removing chemically contaminated substances from adsorbed materials, and Figure 3; a schematic diagram of the clean gas adjustment structure formed by the stand removal means in accordance with the present invention. The same reference symbol table θ is attached to the anion-enriched gas adjustment device in the form of ifoka Hachizana, and the same components as in FIG. 3 are equipped with a chemical pollutant removal / ionization gas adjustment device A. It consists of: a line lamp 4 2. an electric field point, a fine particle composed of photoelectron release material 41, ultraviolet light, a pole 43, and a charged particle collection material 44. Device 'and by light

550730 五電18巧(#)料2 7、匕 -— 之陰離子產生裳置兔m電場形成用電極29所構成 置八中，由排風機所導入：二，離子富化氣體調整裝 除。其次氣體，將：2導1入化學污染物質即被去 中，在此因對光電子釋出 杯之微粒子去除手段 ΪΠ::於此光電子而產生陰離；照= 產生 離：：氣體中之微粒子將荷電 斤產生之陰 :均，g/心下之經清淨之氣體成:二度丨有機物濃 線後，即釋出光^子f ^對光電子釋出材料27照射紫外 將第4圖之陰離子富化氣體氣體 ^陰離子畐化氣體。 富化氣體，在第卬之各種製程；作所調/之陰離子 使用’即可進行基板之氧化控 為基板曝路用之氣體 微粒：污染及化學污染之半導體製造處理亦可進行經防止 調整裝置、及丁依由水依破及碎 1 材之/: : : : J，濾機之清潔氣體 圖，圖中’對與第 概… 照符號表示並省略其說明。 成構件，係附以相同參 313678.ptd 第36頁 550730 五、發明說明（33) 取^2圖/1示之陰離子富化氣體調整裝置A具備有：由# =污染物去除吸著材料21及微粒子去除過滤機22所構2 =淨化裝置；及由水破碎喷嘴33、過剩水去除用脫去$ 34、供給水用水槽31所構成之陰離子產生裝置。第5圖 不之陰離子富化氣體調整裝置4中，由排風機所導入之 淨室空氣，通過化學污染物去除吸著材料21及微粒子去陝 過濾機22，而經清淨化到微粒子濃度為等級i 〇以下、離= 成份濃度及有機物濃度均為2 ju g/m3以下後，被導入陰離 子產生裝置，並在此經由熱交換器32而將供給水用水槽3 i 之水從水破碎喷嘴33以高壓喷霧，即可形成陰離子。由於 所形成之陰離子富化氣體含有過剩之水份之故，依脫去機 34去除過剩水份，依再熱加熱器35加熱為所需溫度。由 此，可提供陰離子濃度為2 0 0,0 00個/mL至300,〇〇〇個/mL、 微粒子濃度為等級1 0以下、離子成份濃度及有機物濃度均 為2 // g/m3以下之潔淨之陰離子富化氣體。在脫去機34所 捕集之過剩之水份將被收容在供給水用水槽3 1，在水破碎 噴嘴3 3再行利用。在此，如上述，如依光電法則無臭氧之 產生之故，通常不需要如第2圖所示般之臭氧去除材料。 將由第3圖之陰離子虽化氣體調整裝置A所调整之陰離子富 化氣體在第1圖之各種製程中作為基板曝露用之氣體，即 可進行基板之氧化控制之同時，亦可進行經防止微粒子污 染及化學污染之半導體製造處理。 另外，在依水破碎之陰離子產生法中，視條件之情 況，有與陰離子一起會產生1〇至20%程度之陽離子之情550730 Wudian 18 Qiao (#) material 2 7. The anion generation of the dagger is composed of the electric field forming electrode 29 for the rabbit. The eighth element is introduced by the exhaust fan: Second, the ion-enriched gas is adjusted and removed. Secondly, the gas will be removed by introducing 2 into the chemical pollutants. Here, due to the means for removing the particles of the photoelectron release cup ΪΠ :: here the photoelectrons generate anion; photo = generation ion :: particles in the gas The yin produced by the charged catenary: uniform, g / purified gas under the heart is: 2 degrees 丨 After the organic matter concentration line, the photon is released ^ on f ^ The photoelectron release material 27 is irradiated with ultraviolet rays to enrich the anion in Figure 4 Gas gas ^ anion tritium gas. Enriched gas in various processes of the second stage; used as an anion to adjust / control the oxidation of the substrate to gas particles for substrate exposure: semiconductor manufacturing processing of pollution and chemical pollution can also be carried out through the adjustment prevention device , And Ding Yiyu water broken and broken 1 /:::: J, the clean gas diagram of the filter, the figure 'pair and outline ... are indicated by symbols and their descriptions are omitted. The component is attached with the same reference 313678.ptd Page 36 550730 V. Description of the invention (33) Take the ^ 2 anion-rich gas adjustment device A shown in Figure / 1 with: # = Contaminant removal sorption material 21 And particle removal filter 22 constituted by 2 = purification device; and anion generating device composed of water crushing nozzle 33, excess water removal $ 34, and water supply water tank 31. In the anion-rich gas adjusting device 4 shown in FIG. 5, the clean room air introduced by the exhaust fan removes the adsorbent material 21 and the fine particles to the Shaanxi filter 22 through chemical pollutants, and is purified to the fine particle concentration of the grade i 〇 or less, ionization = component concentration and organic matter concentration are both 2 ju g / m3 or less, and then are introduced into the anion generating device, and the water supplied to the water tank 3 i is passed from the water crushing nozzle 33 through the heat exchanger 32. With high pressure spray, anions can be formed. Since the anion-rich gas formed contains excess water, the excess water is removed by the stripper 34 and heated to the desired temperature by the reheating heater 35. Therefore, it can provide anion concentration of 20,000 / 300 to 300,000 / mL, microparticle concentration of level 10 or less, ionic component concentration and organic matter concentration of 2 // g / m3 or less Clean anion-enriched gas. The excess water captured in the stripper 34 will be stored in the water supply water tank 31 and reused at the water crushing nozzle 33. Here, as described above, if no ozone is generated according to the photoelectric principle, an ozone-removing material as shown in FIG. 2 is generally not required. The anion-enriched gas adjusted by the anionizing gas adjusting device A in FIG. 3 can be used as the substrate exposure gas in the various processes in FIG. 1 to control the oxidation of the substrate and prevent fine particles. Semiconductor manufacturing process for pollution and chemical pollution. In addition, in the anion generation method broken by water, depending on the conditions, there may be cases where cations of about 10 to 20% are generated together with the anions.

313678.ptd 第37頁 550730 五 、發明說明（34) — 形。通常，如依水破碎法時會產生大 產生20 %程度之陽離子仍會被陰離子^子之故，即使 要陽離子去除手段，惟視情況，有時希^之故並不特別需 35之更下游處配置陰電極， M在再熱加熱器 馀a固商果並去除陽離子0 弟6圖表不由依吸著材料/微粒子去子 體調整裝置、及依X光照射之陰離子產生裝义濾機之清淨氣 關本發明之其他狀態之陰離子富化氣體調整置所構^成之有 成：。第6圖中，對與第2圖同樣之構成 ：：略= 之參照符號表示，並省略其說明。 係附u相同 第6圖所示之陰離子富化氣體調整裝置A呈 :污染物★除吸著材料21及微粒子去，過濾機構 月淨化裝置·，及由極微弱X光（柔和1光：波長0.2構成之 產生裝置36所構成之陰離子產生裝置。第6圖所示之陴= 子富化氣體調整裝置A中，由排風機所導入之清淨室^ 氣’通過化學污染物去除吸著材料2 1及微粒子去除過滅機 2 2 ’而經清淨化到微粒子濃度為等級丨〇以下、離子成&濃 度及有機物濃度均為2 // g/m3以下後，被導入陰離子產生 裝置’並在此對氣體照射X光，氣體分子即離子化而產生 陰離子。第6圖中，B表示因X光照射所引起之氣體分子之 離子化部。如對氣體照射X光，則會產生陰離子及陽離 子，惟陽離子將被陰電極37所去除。由此，可提供陰離子 農度為100，〇〇〇個/mL以上、微粒子濃度為等級1〇以下、離 子成份濃度及有機物濃度均為2 // g/in3以下之潔淨之陰離 子富化氣體。將由第6圖之陰離子富化氣體調整裝置人所調313678.ptd page 37 550730 V. Description of the invention (34) — shape. In general, if the cation produced by the water-crushing method will produce about 20% of cations, they will still be anions. Even if a cation removal method is required, depending on the situation, sometimes it is not necessary to use 35 or more downstream. A negative electrode is arranged at the place where M is used to reheat the heater and remove the cations. The figure 6 cannot be cleaned by the adsorbent material / particles to the proton adjustment device and the anion generating filter according to the X-ray irradiation. Gas off The other state of the present invention is that the anion-enriched gas adjustment device is composed of: In FIG. 6, the same configuration as in FIG. 2:: omitted = is indicated by the reference symbol, and description thereof is omitted. The anion-enriched gas adjustment device A shown in Fig. 6 is the same as that shown in Fig. 6: Contaminants ★ In addition to adsorbing material 21 and fine particles, the filter mechanism is purified by a monthly purification device. Anion generating device composed of 0.2 generating device 36. 陴 shown in Fig. 6 = In the sub-rich gas adjustment device A, the clean room introduced by the exhaust fan ^ gas' removes the adsorbent material through chemical pollutants 2 1 and the microparticle removal annihilation machine 2 2 ', and after purification, the microparticle concentration is below the level 丨 0, the ion concentration and the organic substance concentration are both 2 // g / m3 or less, and then introduced into the anion generating device' and When the gas is irradiated with X-rays, the gas molecules are ionized to generate anions. In Figure 6, B represents the ionized part of the gas molecules caused by X-rays. However, the cations will be removed by the negative electrode 37. As a result, it can provide an anionic agronomy of 100, 000 / mL or more, a fine particle concentration of 10 or less, an ion component concentration and an organic matter concentration of 2 // g / in3 to The anionic cleansing the enriched gas. Tuned by the anionic FIG. 6 people enriched gas adjusting means

313678.ptd 第38頁 550730 五、發明說明（35) '~一^— 整之陰離子富化氣體在第1圖之各種製種令作為Α ^ 用之氣體使用，即可進行基板之氧化抑制之同時土，反亦曝^露 行經防止微粒子污染及化學污染之半導體製造處理。、"進 另外’對氣體照射X光以產生陰離子時，視^射條件 等情況，有產生微量之臭氧之情形。如此，有產生臭氧之 可能時，如第7圖所示，以在陽離子去除用之陰電極37之 更下游配置臭氧分解·去除材料2 4以作成即使產生極微量 之臭氧仍能分解去除之方式較佳。由此，可提供陰離子濃 度為100，000個/ inL以上、微板子濃度為等級1〇以下 '離子 成份濃度及有機物濃度均為2“ g/m3以下、且臭氧濃度為 0 · 0 1 ppm以下之潔淨之陰離子富化氣體，而如將此氣體在 第1圖之各種製程中作為基板曝露用之氟體使用，即可進 行基板之氧化控制之同時，亦可進行經防止微粒子污染及 化學污染之半導體製造處理。 [實施例] 使用第2圖至第7圖所示之有關本發明之各種形態之陰 離子畐化氣體調整裝置以調製陰離子富化氣體。各裝置係 使用下列之構成者。 衣 " ①陰離子富化氣體調整裝置丨：第2圖所系構成之裝置（尺 寸約3 0 1 ) —吸著材20 :離子交換纖維：活 ：η之混床 一陰塵過滤機: ULPA過遽機 —放電部··在電極間施加3〇kv —〇3分解·去除材料：Mn〇2/Ti〇 γ 550730 五、發明說明（36) ②陰離子富化氣體調整裝置2··第3圖所示構成之裝置（尺 寸約3 0 1 ) 一吸著材20及除塵過濾機21 ••與①者相同 —备、外線燈28·殺菌燈（4¾) —光電子釋出材料··在！^〇2上按薄膜狀被覆^者 —電極29··將SUS製之網狀電極按第3圖之方式設置在燈上 方·，電場10V/cm ③ 陰離子虽化氣體調整裝置3:第4圖所示構成之裝置（尺 寸約401) —吸著材料2 0 :與上述①相同 —光電子釋出材27及41、紫外線燈28及42、電極29及43: 與上述〇相同 -荷電微粒子捕集材：板狀Cu —Zn ④ 陰離子富化氣體調整裝置4:第5圖所示構成之裝置（尺 寸約2 0 〇 1 ) =吸著2料20及過濾機21 :與上述①相同 水喷霧裝置：對水破碎喷霧33以水壓35〇kPa、水空氣比 (L/G) = l供給離子交換水31/min並喷霧 二=熱加熱器··依再熱盤管使生成水滴氣化。 5丢離子虽化氣體調整裝置5:第6圖所示 之置（尺 寸約3 0 1 ) —吸著材料20及過濾材21 :與上述①相同 —X光產生裝置36:波長〇.2至〇.311111; —陰電極37:板狀Cu〜Zn; 550730 五、發明說明（37) 對上述之陰離子富化氣體調整裝置1至3、5，以流速 3 1 /m 1 η供給潔淨室空氣（微粒子濃度等級1 〇，〇〇〇，有機物 濃度100至120 # g/m3、Νη3濃度15至2〇 # g/m3)。又，對上 述之陰離子富化氣體調整裝置4，以流速3〇1/min供給同樣 之潔淨室空氣。分別從陰離子富化氣體調整裝置1至5所得 空氣之性質列示在下列第2表。 第2表：陰離子富化氣體之性狀 裝置 清淨化方 式 陰離子產 生方式 陰離子獻 (個/mL) 微粒子濃 度個/ft3 有機物濃 度 Vg/m3 βg/m3 入口 出口 ①圖2 吸著 /ULPA 放電 ^100 100,000^ <10 <2 <1 ②圖3 吸著/ ULPA 光電子 $100 10,000$ <10 <2 <1 ③圖4 吸著/光 電子 光電子 0 8.000 至 10.000 <100 <2 <1 ④圖5 吸著 /ULPA 树碎 $100 200,000 至 300,000 <10 <1 <1 ⑤圖6 吸著 /ULPA X先照、射 100,000$ <10 <1 <1 在此’由裝置①所得之陰離子富化氣體中之〇3濃度為 O.Olppm以下。313678.ptd Page 38 550730 V. Description of the invention (35) '~ 一 ^ — The whole anion-enriched gas in the various production orders in Figure 1 is used as the gas for A ^, and the oxidation of the substrate can be inhibited. At the same time, the soil is exposed through a semiconductor manufacturing process to prevent particulate pollution and chemical pollution. In addition, when irradiating the gas with X-rays to generate anions, depending on the radiation conditions, a small amount of ozone may be generated. In this way, when there is a possibility of generating ozone, as shown in FIG. 7, an ozone decomposition / removal material 2 4 is arranged further downstream of the negative electrode 37 for cation removal, so as to be able to decompose and remove even a minute amount of ozone. Better. As a result, it is possible to provide anion concentration of 100,000 / inL or more, microplate concentration of level 10 or less, both ion component concentration and organic matter concentration of 2 "g / m3 or less, and ozone concentration of 0 · 0 1 ppm or less. Clean anion-enriched gas, and if this gas is used as a fluorine body for substrate exposure in the various processes of Fig. 1, the oxidation control of the substrate can be performed, and at the same time, particle pollution and chemical pollution can be prevented. [Semiconductor manufacturing process] [Examples] The anion-enriched gas adjusting devices according to various aspects of the present invention shown in Figs. 2 to 7 are used to prepare anion-rich gas. Each device uses the following components. " ① Anion-rich gas adjustment device 丨: Device constituted in Figure 2 (size about 3 0 1) —adsorbent material 20: ion exchange fiber: live: mixed bed of η a shading filter: ULPA Machine-discharge unit ·· Apply 30kv—〇3 decomposition and removal materials between electrodes: Mn〇2 / Ti〇γ 550730 5. Description of the invention (36) ② Anion-rich gas adjustment device 2 ·· 3 Shown Device (size about 3 0 1) a suction material 20 and dust removal filter 21 •• Same as ①—preparation, outside light 28 · sterilization lamp (4¾) —photoelectron release material ... on! ^ 〇2 Film-shaped coating ^ Electrode 29 ·· SUS mesh electrode is installed above the lamp as shown in Fig. 3 · Electric field 10V / cm ③ Anion gas adjusting device 3: Structure shown in Fig. 4 Device (size about 401) — absorbing material 2 0: same as ① above—photoelectron release materials 27 and 41, ultraviolet lamps 28 and 42, electrodes 29 and 43: same as above 〇—charged particulate collection material: plate shape Cu —Zn ④ Anion-enriched gas adjustment device 4: Apparatus with the structure shown in Figure 5 (size about 2000) = suction 2 material 20 and filter 21: same as above ① Water spray device: for water The crushing spray 33 supplies ion-exchanged water 31 / min at a water pressure of 35 kPa and a water-air ratio (L / G) = 1 and sprays 2 = a heating heater. The re-heating coil vaporizes the generated water droplets. 5 Ionized gas adjustment device 5: The position shown in Fig. 6 (size about 3 0 1) —adsorption material 20 and filter material 21: same as above ①—X-ray generation Device 36: Wavelength 0.2 to 0.311111;-cathode electrode 37: plate-shaped Cu ~ Zn; 550730 V. Description of the invention (37) The above-mentioned anion-enriched gas adjustment devices 1 to 3 and 5 are used at a flow rate of 3 1 / m 1 η Supply clean room air (fine particle concentration level 10,000, organic concentration 100 to 120 # g / m3, Nη3 concentration 15 to 20 # g / m3). In addition, the anion-rich gas described above The adjustment device 4 supplies the same clean room air at a flow rate of 301 / min. The properties of the air obtained from the anion-rich gas adjusting devices 1 to 5 are shown in Table 2 below. Table 2: Properties of anion-enriched gas device Purification method Anion generation method Anion donation (a / mL) Microparticle concentration a / ft3 Organic matter concentration Vg / m3 βg / m3 Inlet and outlet ① Figure 2 Suction / ULPA discharge ^ 100 100,000 ^ < 10 < 2 < 1 ② Figure 3 Pickup / ULPA Photoelectron $ 100 10,000 $ < 10 < 2 < 1 ③ Figure 4 Pickup / Photoelectron Photoelectron 0 8.000 to 10.000 < 100 < 2 < 1 ④Figure 5 Suck / ULPA tree broken $ 100 200,000 to 300,000 < 10 < 1 < 1 ⑤Figure 6 Suck / ULPA X first shot, shoot 100,000 $ < 10 < 1 < 1 The concentration of 03 in the anion-enriched gas obtained by the device ① was 0.01 ppm or less.

313678.ptd 第41頁 550730 五、發明說明（38) 將Si(矽）晶圓表面，曝露在上述之陰離子富化氣體調 整裝置1至5所传之陰離子富化氣體，並觀察氧化膜之生成 狀況。Si晶圓係使用高分解能xps:喜延塔（gcienta)製、 ESCA300型、以RCA洗滌後施行HF(氟酸）（0.〇5%)處理並經 純水漂洗（r i n s e )，乾燥者作為晶圓試料使用。對此晶圓 試料表面，以流速31/m in喷吹在上述之陰離子富化氣體調 整裝置1至5所得之陰離子富化氣體，在經過既定時間後測 定試料表面所形成之氧化膜之膜厚。結果如下列第3表所 示。又，作為比較例，直接原樣使用潔淨室空氣，使同樣 曰曰圓试料表面曝露在該潔淨室空氣中。其結果同樣列示在 下列第3表。 … 7 第3表：s i晶圓氧化試驗 裝置 清淨化方式 陰離子產生方式 氧^^^^度 (A) 3時間 曝露後 12時間 曝露後 ①Η 吸著/UIPA 放電 〈0.02 &lt;0.02 ② 二及著/UlST&quot; 光電子 &lt;0.02 &lt;0.02 ③ 吸著/光電子 光電子 &lt;0.02 &lt;0.02 ④ 吸著ΛΙΡΑ 树碎 &lt;0.02 &lt;0.02 ⑤ 吸著/DLPA X先照射 &lt;0.02 &lt;0.02 tbl交例：潔淨室空氣曝露 0.3 5 其次，使用陰離子富化氣體調整裝置1，改變處理條 件藉以調整氣體中之陰離子之濃度為約5 〇 〇、約丨，〇 〇 〇、約 3,000、約 5,000、約 10,〇〇〇、約3〇,〇〇〇、約 5〇,〇〇〇個 /mL ’同樣施行晶圓試料表面之曝露（曝露時間1 2小時），313678.ptd Page 41 550730 V. Description of the invention (38) The surface of the Si (silicon) wafer is exposed to the anion-enriched gas transmitted by the above-mentioned anion-enriched gas adjustment devices 1 to 5, and the formation of the oxide film is observed. situation. Si wafers use high-resolution xps: manufactured by Gcienta, ESCA300, HF (fluoric acid) (0.05%) after RCA washing, and rinsed with pure water. Wafer sample use. On this wafer sample surface, the anion-rich gas obtained by spraying the anion-rich gas from the above-mentioned anion-rich gas adjusting devices 1 to 5 at a flow rate of 31 / m in is measured for the thickness of the oxide film formed on the surface of the sample after a predetermined time has elapsed. . The results are shown in Table 3 below. As a comparative example, clean room air was used as it is, and the surface of the same round sample was exposed to the clean room air. The results are also shown in Table 3 below. … 7 Table 3: Si wafer oxidation test device, purification method, anion generation method, oxygen ^^^^ degree (A) After 3 hours of exposure after 12 hours of exposure ①Η Adsorption / UIPA discharge <0.02 &lt; 0.02 ② / UlST &quot; Optoelectronics &lt; 0.02 &lt; 0.02 ③ Adsorption / Photoelectron Optoelectronics &lt; 0.02 &lt; 0.02 ④ Adsorption ΛΙΡΑ tree fragmentation &lt; 0.02 &lt; 0.02 ⑤ Adsorption / DLPA X first irradiation &lt; 0.02 &lt; 0.02 tbl Example: Clean room air exposure 0.3 5 Secondly, using an anion-enriched gas adjustment device 1, change the processing conditions to adjust the concentration of anions in the gas to about 5,000, about 丨, 0.000, about 3,000, about 5,000, about 10,000, about 30,000, about 50,000 / mL 'the same exposure of the wafer sample surface (exposure time 12 hours),

313678.ptd 第42頁 550730313678.ptd Page 42 550730

為：ί:i ϊ ϊ生成抑制上有效之陰離子之濃度。經確認 哙離子濃度在〗，〇〇〇個/mL以上時氧化臈為&lt;0.1Α而有 1禾:在5,000個/ffiL以上時為C0.05A而有顯著之效果。 鉍確認為：在1 〇，〇 〇 〇個/mL以上時為〈〇. 〇2 A而 …貝者之效果。 [產業上利用之可能性] 由上述發現可知，本發明可發揮如下效果。 月(39) (1)對半導體製造過程之空間中供給陰離子富化氣 一，即可在抑制基板之氧化下進行各種基板之各種加工。 學、、亏當所調製陰離子富化氣體時，由於去除微粒子或化 離子而可製得不含微粒+、化學成份之潔淨之陰 氣體之故，可調製對污染安定之（具有污染防止 功能）氣體。 V木W正 子或(化3 ^調//#離子富化氣體時，由於使用經去除微粒 5或2予π染物質之氣體，而可防止所產 微粒子等之污染物質所消費。 仏離子將被 (4)在現今階段，基板之污 Ϊ =所引起者，惟今後，除此等污染物之外加之 ίϊΐ:之氧化抑制作業將成為重要事項。如依本發明， 即可獲件同時具有基板表面之氧化抑制作 险離子:么按本發明之適用對象之裝置規模、所需要之 曰、所需要之氧化抑制效果等之所需規格，而 扯争右者m α 子產生方法之故（參照第1表），可楹 供更有m用性之污染防止用氣體。For: ί: i ϊ ϊ Concentration of anions effective to inhibit formation. It was confirmed that the concentration of europium ions was in the range of ≧ 0.0 000 / mL, and the ratio of europium oxide was &lt; 0.1A and 1%: when the concentration was 5,000 / ffiL or more, C0.05A had a significant effect. Bismuth was confirmed to have an effect of <0.02 A and… at 10,000 / mL or more. [Possibility of Industrial Utilization] As can be seen from the above findings, the present invention can exert the following effects. (39) (1) Supply anion-rich gas to the space of the semiconductor manufacturing process. One can perform various processing of various substrates while suppressing the oxidation of the substrate. When the anion-enriched gas is prepared, it is possible to prepare a clean anion gas that does not contain particles + and chemical components due to the removal of particles or chemical ions. It can be adjusted to stabilize pollution (with pollution prevention function). gas. When V wood W positives or (Chemical 3 ^ tune // # ion-enriched gas), the use of a gas after removing particles 5 or 2 to prevent π dye matter can prevent consumption of contaminated materials such as produced particles. (4) At this stage, substrate fouling = caused, but in the future, in addition to these pollutants plus ϊΐ: oxidation inhibition operation will become an important matter. According to the present invention, you can obtain the same Oxidation suppression on substrate surface as dangerous ions: according to the required specifications of the device scale of the object of the present invention, the required specifications, the required oxidation suppression effects, etc., and the reason for the m α generation method ( (Refer to Table 1), it can supply more pollution-proof gas.

313678.ptd 第43頁 550730 圖式簡單說明 _ [圖式之簡單說明] 第1圖：表示半導體工廠（潔Γ ^ 之特定處理之内容之過程圖。 至）中在半導體基板上 第2圖：表示本發明中所用之制 用之裝置之一例之概略構成圖。“、、製得陰離子富化氣體 第3圖：表示本發明中所用之 q 用之裝置之其他例之概略構成圖。〜製得陰離子富化氣體 第4圖：表示本發明中所用之 用之裝置之其他例之概略構成圖。“、、j得陰離子富化氣體 第5圖··表示本發明中所用之為 s 用之裝置之其他例之概略構成圖。、知陰離子富化氣體 第6圖：表示本發明中所用之发如 用之裝置之其他例之概略構成圖。 于匕離子富化氣體 第7圖：表示本發明中所用之為製 ^ 用之裝置之其他例之概略構成圖。、于*離子富化氣體 第8圖：表示習用之半導體工礙（#^ 之空氣清淨系統之概略構成圖。 ^ /爭至）中一般使用 [元件符號說明] 1 室外空氣 預濾機 4 中性能收塵機 21 °及著材料 2 3 — 1針狀之放電電極 3 空調機 7 - ：1、7 - 2、2 0 排風機 22 除塵過濾機 23-2 對向電極 24 〇3(臭氧）分解 去除材料313678.ptd Page 43 550730 Brief description of diagrams _ [Simplified explanation of diagrams] Diagram 1: Process diagram showing the details of the specific processing of a semiconductor factory (Jie ^ ^) To the diagram on the semiconductor substrate: A schematic configuration diagram showing an example of a manufacturing apparatus used in the present invention. "、, Preparation of anion-enriched gas Fig. 3: Schematic diagram showing another example of a device for q used in the present invention. ~ Preparation of anion-enriched gas Fig. 4: Illustrated use of the present invention A schematic configuration diagram of another example of the device. ",, and j are anion-rich gas. Fig. 5 shows a schematic configuration diagram of another example of the device used in the present invention. Fig. 6 shows a schematic configuration diagram of another example of a device used in the present invention. FIG. 7 is a schematic configuration diagram showing another example of a device used for manufacturing in the present invention. Figure 8: Ion-enriched gas Figure 8: The schematic diagram of the conventional semiconductor process (# ^ air cleaning system. ^ / Zhengzhi) is generally used [component symbol description] 1 outdoor air pre-filter 4 Performance dust collector 21 ° and writing materials 2 3 — 1 needle-shaped discharge electrode 3 air conditioner 7-: 1, 7-2, 2 0 exhaust fan 22 dust filter 23-2 counter electrode 24 〇3 (ozone) Decompose and remove material

313678.ptd313678.ptd

550730 圖式簡單說明 25- 1 空 氣 流 動 25- 2 陰 離 子 富化氣 體之流動 26 陰 離 子 2Ί、 41 光 電 子 釋出材 料 2 8、4 2 紫 外 線 燈 29&gt; 43 電 場 形 成用電 極 31 供 給 水 用水槽 32 熱 交 換 器 33 水 破 石卒 喷 嘴 34 過 剩 水 去除用 脫去機 35 再 熱 加 熱器 36 極 微 弱 X光產生裝置 3 7 陰 電 極 44 荷 電 微 粒子捕 集材料 A 陰 離 子 富4匕氣 體調整裝置 B 因 X光照射所引起之氣體分子 之 離 子 化 部550730 Brief description of the diagram 25-1 Air flow 25-2 Flow of anion-enriched gas 26 Anion 2Ί, 41 Photoelectron release material 2 8, 4 2 Ultraviolet lamp 29 &gt; 43 Electric field forming electrode 31 Water supply tank 32 Heat exchange Device 33 Water-breaking stone nozzle 34 Dehydrator for removing excess water 35 Reheating heater 36 Very weak X-ray generating device 3 7 cathode electrode 44 Charged particle collection material A Anion-rich gas control device B due to X-ray irradiation Ionization of gas molecules

313678.ptd 第45頁313678.ptd Page 45

Claims (1)

550730 ^^ 91109971 六、申請專利範圍550730 ^^ 91109971 6. Scope of patent application 修正 f半導體製造方法’其係在使基板表面曝露在陰離 體：的同時，進行該基板之處理者，其中， ^二:子畜化氣體’係由於將經去除微粒子及/或化 :污木物之清淨氣體通過陰離子產生裝置以進行調整 2 ·如申請專利範 學污染物，係 群中之一種。 3 ·如申請專利範 離子富化氣體 離子成份濃度 下之氣體通過 4 ·如申請專利範 方法，其中前 1， 000個 /mL以 0 0 0個/mL以上 5 · —種半導體製 體之氣體流路 體清淨化裝置 構成之陰離子 子富化氣體供 6 ·如申請專利範 體清淨化裝置 下、離子成份 圍第1項之半導體製造方法，其中前述化 選自離子成份、無機物、有機物而成之 圍第 ，係 10// 陰離 圍第 述陰 上、 、特 造裝 •’由 及下 富化 給至 圍第 ，調 濃度 1項之半導體製造方法，其中前述陰 由於將微粒子濃度在等級1 〇 〇以下、 g/m3以下、有機物濃度在10// g/m奴 子產生裳置以進行調整者。 1項至第3項中任一項之半導體製造 富化氣體中之陰離子濃度為 較佳為5, 〇〇〇個/mL以上、更佳為10, 佳為5〇, 〇〇〇個/mL以上。 置’其特徵為：具有通過被處理氣 該氣體流路之上游部份所配置之氣 游部份所配置之陰離子產生裝置所 氣體調整裝置；以及將所得之陰離 基板表面之供給手段。 0 5項之半導體製造裝置，其中使用氣 整氣體中之微粒子濃度為等級1 G Q以 為1 0// g/m^下、有機物濃度為 UModified f Semiconductor manufacturing method 'is to expose the surface of the substrate to an isolated body: while performing the processing of the substrate, wherein ^ 2: sub-animalization gas' is due to the removal of fine particles and / or pollution: The clean gas of wood objects is adjusted by an anion generating device. 2) If the patent applies for pollutants, it is one of the groups. 3 · If the patent application ion-enriched gas passes the gas at a concentration of ionic components 4 · If the patent application method is adopted, in which the first 1,000 / mL is more than 0 0 / mL 5 ·-a kind of semiconductor body gas Anion-enriched gas composed of flow path body purification device is provided for 6 · For example, under the patent application body purification device, the semiconductor manufacturing method of the ionic component surrounds the first item, wherein the aforementioned conversion is selected from the group consisting of ionic components, inorganic substances, and organic substances. The perimeter is the 10 // yinli perimeter, which describes the upper, lower, and special equipment of the yin • “from the bottom to the top to enrich the perimeter, and adjusts the concentration of the 1st semiconductor manufacturing method, wherein the aforementioned yin is due to the concentration of fine particles in the grade Those who are below 1000, g / m3 or less, and whose organic matter concentration is 10 // g / m, produce clothes for adjustment. The anion concentration in the semiconductor manufacturing rich gas according to any one of items 1 to 3 is preferably 5,000 / mL or more, more preferably 10, and 50,000 / mL. the above. It is characterized by having a gas adjustment device including an anion generating device disposed in an upstream portion of the gas flow path through the gas to be processed, and a supply means for separating the obtained anion from the surface of the substrate. A device for manufacturing semiconductors according to item 5, in which the concentration of fine particles in the gas used is a level of 1 G, Q is 10 // g / m ^, and the concentration of organic matter is U 550730 ^ ^ _案號91109971_年丨月曰 修正_ 六、申請專利範圍 g / m奴下° 7.如申請專利範圍第5項或第6項之半導體製造裝置，其 中使用陰離子富化氣體調整裝置，調整陰離子富化氣 體之陰離子濃度為1，0 0 0個/mL以上、較佳為5，0 0 0個 /mL以上、更佳為1 0, 0 0 0個/mL以上、特佳為5 0, 0 0 0個 / m L以上°550730 ^ ^ _ Case No. 91109971_ Year 丨 Month Amendment _ 6. Application for patent scope g / m slave ° 7. For the semiconductor manufacturing device of scope 5 or 6 of the scope of patent application, anion-rich gas is used for adjustment Device to adjust the anion concentration of the anion-enriched gas to 1,000 or more per milliliter, preferably 5,000,000 per milliliter or more, more preferably 10,000 per milliliter or more, particularly good More than 5 0, 0 0 0 / m L ° 313678修正版.ptc 第2頁 2003.05.21.048313678 revision.ptc page 2 2003.05.21.048
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