TW544767B - Manufacturing method of attenuate-rim PSM - Google Patents

Abstract

This invention discloses a manufacturing method of attenuate-rim PSM. Firstly, a light-pervious substrate is provided, which has a phase shift layer, and a mask layer. Then, the mask layer is patterned to expose the surface of the phase shift layer. Subsequently, the phase shift layer is etched isotropically to form a reversed T shape trench in the mask layer and the phase shift layer. a photoresist layer is formed globally to fill up the reversed T shape trench. A development process is carried out using the mask layer as a mask to remove part of the photoresist layer and leave only the photoresist layer beneath the mask layer. The light-pervious substrate is etched to a specific thickness forming a light-previous region by using the patterned mask layer and the residual photoresist layer as masks. Finally, the residual photoresist layer and the mask layer are removed.

Description

544767

The present invention relates to a method for manufacturing a phase shift photomask, and in particular, to a method for manufacturing a phase-difference composite phase shift photomask. '' Field of invention: Related technical description:

In the lithography imaging technology, as the size of the integrated circuit is continuously reduced, the requirements for the accuracy of the pattern exposure are also getting higher and higher. However, the reduction in size will cause an optical proximity effect when using a mask for exposure, destroying the accuracy of the pattern. Therefore, many techniques have been proposed to improve the accuracy of imaging. One of the widely used technologies is the application of phase shift mask (PSM). With the increasing demand for thinning, the phase shift mask can use the original organic stage without changing the process to achieve the purpose of improving the resolution and increasing the depth of focus. In addition to phase shift masks! In addition to front-line lithography and deep UV lithography, it can also be used for very short UV lithography and even X-ray lithography.

Because phase shift masks can effectively mitigate the negative effects of optical proximity effects, many different types of phase shift masks have also been generated by continuous improvement. It can be roughly divided into the following types: alternate phase shift mask (alternate PSM), phase shift layer only phase shift mask (shifter only PSM), edge type phase shift mask (rim pSM), frame-type phase shift Photomask (outrigger PSM), light reduction phase shift mask (attenuated PSM), and edge light reduction composite phase shift mask (attenuat e_r & PSM). Among them, the edge dimming composite phase shift photomask combines the advantages of the light dimming photomask and the edge line photomask. The light dimming area can eliminate diffraction of 2 or 3 levels farther from the central maximum light by interference. .

0503-7730TWFl; TSMC200M752,1753; felicia.ptc Page 4 544767 ___ Case No. 91117361_ Year, month, day, day, day, day, day, month, month, month, month, month, month, month, month, five, day, day, month, month, month, month, month, month, day, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, month, five, description of the invention. Top view and cross-sectional view of a light reduction composite phase shift mask. The reference number 20 is a light-transmitting substrate, and a phase shift layer 22 is provided on the surface of the light-transmitting substrate 20. The trench I is a light-transmitting area, and the reference S is an edge phase displacement area. Figure 1c shows a schematic diagram showing the relationship between the mask space and the amplitude intensity of the electric field after exposure. The amplitude intensity of the light-transmitting region I is the strongest ', while the light-transmittance of the phase-shift layer 22 is low and the eye angle system is 180 degrees, and the amplitude of the phase-shift region s is slightly stronger and the eye angle 1 80 degrees. The subsequent electric field amplitude and light intensity obtained on the wafer are shown in Figures 1 D and 1 E, respectively. The edge-dimming composite phase shift mask can focus the exposure of the transparent area on the wafer and reduce its line width. The following describes one of the manufacturing methods of the conventional edge-light-reduction composite phase shift photomask with reference to FIGS. 2A to 2D. First, referring to FIG. 2A, a light-transmitting substrate 100 made of, for example, quartz is provided, and its light transmittance is about 100%. With a suitable deposition procedure, for example: chemical vapor deposition (chemical vapor deposition 1 CVD; CVD), a phase shift layer and a mask layer 104 are sequentially formed on the substrate 1 above. 〇 surface. The material of the phase shift layer 102 is, for example, molybdenum silicon oxynitride (MoSiON), and its light transmittance is usually about 6%. Xikou masks often use metal chromium (Cr) as the light-shielding layer to define the mask pattern. Because the process is more convenient, the material of the mask layer 104 above can be a metal inscription. The luminosity is usually about 0%. Next, please refer to FIG. 2B. For example, a spin coating method is used to block the surface of the mask layer 104, and a patterning process is performed after performing appropriate lithography and shirt display procedures. Resistance 106.

Please refer to Figure 2C ^ The above patterned first #Resistance 10 is 0503-7730TWFl; TSMC200i-i752,1753; felicia.ptc Page 5 544767 Case number 91117361 V. Description of the invention (3)

In the mask, the above-mentioned mask layer (104, μ, +, +) is used to illuminate the phase shift layer 102 until the surface of the transparent substrate 100 is exposed, and a groove 300 is formed. Next, referring to FIG. 2D, after the above patterned first photoresist 106 is removed by the program of Nan and Guangren, a second photoresist 108 is formed by spin coating, for example, to Fill the groove 300 and cover the surface of the patterned mask layer 104a. Next, referring to FIG. 2E, a lithography process is performed. The photomask is placed in an exposure machine, and the position of the light-transmitting area is aligned and aligned accurately within the above-mentioned groove 300 interval. Note that in this positioning step, it must be quite accurate. Next, please refer to FIG. 2F, implement a developing process, and use a suitable developer to make the lithographic pattern appear to form a patterned second photoresist 1 0 8 a 〇 Then, refer to FIG. 2G and use the above The patterned second photoresist 108a performs an appropriate anisotropic etching process for the mask, so that the surface of the transparent substrate 100 is etched to a certain thickness to form a transparent region 40 (). Finally, please refer to the second figure, and remove the patterned second photoresist 108a and the patterned mask curtain layer 104a, respectively, so as to complete the manufacture of the edge-dimming composite phase shift mask. However, as described above, in the conventional manufacturing method of the edge-light reduction composite phase shift photomask, it is necessary to precisely position and position the light transmission area by the exposure machine. With the increase of the semiconductor element accumulation and the reduction of the element size, the sizes of the light-transmitting area and the edge phase shifting area have been miniaturized. Therefore, the alignment and positioning process of the mask pattern is quite complicated, difficult to control, and must be quite accurate. .

〇5〇3-773〇TWF1; TSMC20〇M752,1753; felicia.ptc Page 6 544767 No. 5-1 91117361 Pass, invention; ^^ ~ ^ ~ §- Provide ff: this; To solve the above problems The main purpose of the present invention is to describe a method for manufacturing a quasi-a-edge light-reducing composite phase shift mask, which is based on the steps of t, and saves the exposure position without going west. The photomask should be placed on the reader again. The invention is summarized as follows: The purpose of the mask is to provide a kind of edge-light reduction composite phase shift light (I) method in order to simplify the manufacturing process. Nine = the method of the first edge-dimming composite phase shift photomask disclosed in the invention, which is mainly characterized by: first, after defining a light transmitting area, c then specifically touching the phase shift layer, and third, When the substrate is finally etched, a photoresist is used to protect the side wall of the phase shift layer, and a surface layer is used to protect the surface of the phase shift layer, so that the phase shift layer can not be etched. In order to achieve the above-mentioned object, the present invention proposes a first method for manufacturing a phase-difference composite phase shift photomask. The steps of this method mainly include: providing a light-transmitting substrate; sequentially forming a phase shift layer and a mask. Layer on the surface of the substrate; patterning the mask layer until the surface of the phase shift layer is exposed; isotropically engraving the phase shift layer to form an inverted τ-shaped depression between the mask layer and the phase shift layer A comprehensive photoresist layer is formed to fill the inverted τ-shaped groove; using the above-mentioned cover layer as a cover, a developing process is performed to remove part of the above photoresist layer, leaving only the underside of the above cover layer The aforementioned photoresist layer; using the patterned mask layer and the remaining photoresist as a mask, engraving the transparent substrate to a certain thickness to form a light transmitting region with a phase angle of 180 degrees; and removing the remaining Photoresist and the cover layer

0503-7730TWF1; TSMC2001-1752,1753; fel icia.ptc Page 7 η Modification V. Description of the Invention (5) Above, f ^ Don't mention 'The above-mentioned transparent substrate is composed of quartz, ^ phase The displacement layer is composed of silicon nitride oxide (MOSon), and the upper cover layer is composed of metallic chromium (cr). In addition, the above-mentioned mask layer is engraved by a dry etching method. As for the above-mentioned second phase shift layer, the dry-etching method was used. Etching the transparent substrate is performed by a dry etching method. The transparent coating i: advance: into the above-mentioned patterned photoresist system using a spin coating method (sPin ^ hair = also proposed a second edge-light reduction composite phase shift mask & method 'The steps of this method are mainly Includes: Liang provides a light-transmitting substrate. Then, sequentially forms: two covers: layer ;: surface of the above-mentioned light-transmitting substrate. Then, patterning 2 covers / openings to expose the surface of the phase shift layer. Then, VL u The phase shift layer is etched isotropically to form an inverted T-shaped concave portion on the mask layer of the mask layer. Finally, with the above name, the non-isotropic surname Carved the basement that was not covered by the above military curtain layer to —— 疋 木 廋 to form a light-transmitting area with a phase angle of 180 degrees. · The manufacturer proposed the third type of edge-dimming composite phase shift photomask. The method of making 仏 is mainly composed of the following steps: gray sound, first grave J for a transparent substrate. Then, a phase shift layer, a mask layer, and a photoresist layer are formed on the surface of the substrate in order. ^, The above-mentioned photoresist layer is formed-opening to expose the surface of the mask layer. ^ In the case, isotropic etching is performed along the above-mentioned opening. The mask layer is used to form an inverted τ-shaped groove between the layer and the mask layer portion. Then, the photoresist layer is a mask, and the layer that is not blocked by the photo is blocked by anisotropy. The 544767 91117361 Λ_η covering the light is described above. 5. Description of the invention (6) --- Next, the phase shift layer and the substrate 'make the above substrate to a certain depth. Finally, remove the cover layer and phase shift. Layer 'to expose part of the above substrate surface. Remove the photoresist < use the above mask layer as a mask, and etch the non-underlying mask layer Example: Example 1 Please refer to Figures 3A to 311 below for details. A cross-sectional view of the manufacturing process illustrates a preferred embodiment of the present invention. First, referring to FIG. 3A, a light-transmitting substrate 300 made of a material such as quartz (Uuartz) is provided, and its light transmittance is about 100%. With a suitable deposition procedure, for example: chemical vapor deposition (CVD), a phase shift layer 302 and a mask layer 300 are formed in sequence> the above-mentioned substrate 300 surface. The material of the phase shift layer 302 is, for example, molybdenum oxynitride silicon (MOSon), and its light transmittance is usually about 6%. Conventional photomasks often use metallic chromium (Cr) with a light transmittance of about 0% as the light-shielding layer defining the photomask pattern. Therefore, for convenience, the material of the above-mentioned mask layer 304 can be used with The metal chromium of the same material as the shading layer in other areas of the cover can maintain the consistency of the process. Next, it is preferable to form a first photoresist 306 on the surface of the mask layer 304 by using a spin coating method. Then, in May, referring to Figure 3B, an appropriate lithography (^ ith ^ graphy) procedure was performed to define a light-transmitting area 300, and then a = ^ developing procedure was performed to The defined pattern of the light-transmitting area 3000 is displayed to form a patterned first photoresist 306a. ^ 妾 着 ‘明 指 图 3C 图’ Using the above patterned first photoresist 3 06a 544767

_ Case No. 91117361 Fifth, the invention (7) is a mask, and an appropriate etching process is performed, for example, dry etchi. The mask layer 30 is etched until the surface of the phase shift layer 302 is exposed. So far, a patterned mask layer 304a is formed. θ Next, referring to the 3D picture, first remove the above-mentioned patterned first photoresist 3 0 6a with an appropriate acid solution, and then use the patterned mask layer 30 ° as a mask to implement a description of the etching process, such as In dry etching, the phase shift layer 302 is isotropically etched, and the angle of attack of the etching gas is adjusted so that the phase shift layer 302 is not only etched longitudinally, and its thickness is reduced to the surface of the substrate 300 to form a Patterned phase shift layer 30 &. With the above, an inverted T-shaped opening 3000a is formed in the phase shift layer 302 and the mask layer 304. Next, referring to FIG. 3E, it is preferable to form a second photoresist 30 8 by using a spin coating method to fill the inverted τ-shaped groove 300 〇a and cover the patterned mask uniformly. Layer 30 ″ surface. Next, please refer to FIG. 3F, using the above patterned mask layer 30 ”as the mask, and engraving the above-mentioned second photoresist 308 which is not masked by the patterned mask layer 304a, Until the surface of the substrate 30Q is exposed, a residual second photoresist is left under the patterned mask layer 304a. Next, please refer to FIG. 3G, using the patterned mask layer 30 "and the residual second photoresist 308a as masks, and perform an appropriate etching, such as dry etching, to" transmit the above-mentioned transparent substrate 3 0 0 ". A certain depth d is etched, and the remaining transparent substrate 300 with a certain thickness forms a transparent region. In this process, the residual second photoresist 308a can protect the sidewall portion of the patterned phase shift layer 302a > ' The patterned mask layer 3 04a can protect the patterned phase shift.

544767 _Case No. 9m73fi1 _ -1 Day ______ V. Invent the surface part of the layer (3) 0 2 a, so as to ensure that the patterned phase shift layer 3 0 2 a is not left uncut. If the material of the transparent substrate 300 is quartz, CF4 * CHF3 or the like can be used as the etching gas. Finally, referring to the third figure, for example, the above-mentioned remaining second photoresist 308a and the above-mentioned patterned mask layer 30 4a are respectively removed with an appropriate acid solution. Thus, an edge-dimming composite phase shift photomask is manufactured. Embodiment 2 Hereinafter, another preferred embodiment according to the present invention will be described with reference to the cross-sectional views of the processes of FIGS. 4A to 4FH. First, referring to FIG. 4A, a light-transmitting substrate 400 made of, for example, quartz is provided, and its light transmittance is about 100%. With a suitable deposition process, for example, chemical vapor deposition (c h e m 丨 c a 1 v a p 0 Γ deposition; CVD), a phase shift layer 402 and a mask layer 404 are sequentially formed on the surface of the substrate 400. The material of the phase shift layer 40 is, for example, MoSi ON, and its light transmittance is usually about 6%. Conventional photomasks often use metallic chromium (Cr) with a light transmittance of about 0% as the light-shielding layer defining the photomask pattern. Therefore, for convenience, the material of the above-mentioned photomask layer 400 can be used with light. The metal chromium of the same material as the shading layer in other areas of the cover can maintain the consistency of the process. Next, it is preferable to form a photoresist 406 on the surface of the mask layer 404 by using a spin coating method. Then, please refer to FIG. 4B, execute an appropriate lithography procedure to define a light transmitting area 4000, and then perform a develop procedure to apply the defined transparency. The 400 area pattern of the light area appears, forming a patterned photoresist 40.

Page 11 544767

2. According to Figure 4C of the U, use the patterned photoresist-the screen is applied with an appropriate etching process, such as dry etch, and the mask layer 4 is etched until the phase 402 surface is exposed. Then, a patterned mask layer 40 and a 4000 are formed. Then, referring to FIG. 4D, first remove the patterned first photoresist 2 06a with an appropriate acid solution, and then pattern the mask layer with the above pattern. 4 ″ is a mask, and the phase shift layer 4 is isotropically etched along the opening 400, such as dry etching. By adjusting the angle of the attack of the etching gas, the 2 f phase shift layer 2 02 is not only It is etched longitudinally to reduce its thickness, and a portion of its side wall is etched laterally until the surface of the substrate 400 is exposed to form a patterned phase shift layer 402a. An inverted τ-shaped groove 4 OOOa is formed through the above-mentioned portion of the mask layer 4 04 and the phase shift layer 4 02. Next, please refer to FIG. 4E, using the above-mentioned mask layer 404a as a mask, perform an appropriate etching, such as dry etching, and anisotropically etch the substrate 400 not covered by the above-mentioned mask layer 404a to a certain depth d, and the remaining transparent substrate 400 of a certain thickness forms a transparent region with a phase angle of 180 degrees. During this process, the mask layer 404a can protect the patterned phase shift layer 402a, and can ensure that the patterned phase shift layer 402a is not etched. If the material of the transparent substrate 200 is quartz, CF4 or CHF3 can be used as the etching gas. Finally, please refer to FIG. 4F, for example, to remove the cover layer 4 0 4a with an appropriate acid solution. That is, an edge light-reduction composite phase shift photomask is manufactured.

〇503-7730TWFl; TSMC2001-1752,1753; felicia.ptc Page 12 544767 -J No. 91117 邡 1_Vehicle Moon Day 倐 Fifth, description of the invention (10) Implementation of Y column 3 Please refer to Figure 5A to 5G below The figure is a process cross-sectional view illustrating a preferred embodiment of the present invention. First, referring to FIG. 5A, a light-transmitting substrate 50 made of, for example, quartz is provided, and the light transmittance is about 100%. With a suitable deposition procedure, such as chemical vapor deposition (CVD), a phase shift layer 502 and a mask layer 504 are sequentially formed on the surface of the substrate 500. The material of the phase shift layer 502 is, for example, molybdenum silicon oxynitride (MoSiON), and its light transmittance is usually about 6%. Conventional photomasks often use metallic chromium (Cr) with a light transmittance of about 0% as a light shielding layer to define the photomask pattern. Therefore, for convenience, the material of the above-mentioned mask layer 504 can be used with light. The metal chromium of the same material as the shading layer in other areas of the cover can maintain the consistency of the process. Next, it is preferable to form a photoresist 506 on the surface of the mask layer 504 by a spin coating method. Then, referring to FIG. 5B, an appropriate lithography procedure is performed to define a transparent area 5000, and then an appropriate develop procedure is performed to apply the defined transparent area The 50000 pattern appears, forming an opening 5000 and a patterned photoresist 506 &. Next, referring to FIG. 3C, an appropriate etching process is performed, for example, dry etching, and the mask layer 504 is isotropically etched along the opening 5000, and the angle of the etching gas attack is adjusted so that The upper curtain layer 5 04 is not only etched longitudinally to reduce its thickness, but also part of its side wall (sidewa 1 1) is horizontally etched until || f ψ μ, +, 士, / 刀 夏 到 路 出 上 上相Up to the surface of the displacement layer 502, a patterned mask layer 504a is formed. Through the above, the patterned mask layer 504a and the patterned photoresist 506a Μ

0503-7730TWF1; TSMC2001-1752,1753; felicia.ptc 544767 _Case No. 91117361_ Year Month Day Amendment _ V. Description of the invention (11) Shaped groove 500 0a. Next, please refer to FIG. 5D, using the patterned photoresist 50 06a as a mask, and implement an appropriate etching process, such as dry etching (dry etch i ng), to remove the unpatterned light with anisotropic etching. The phase shift layer 502, which is blocked by 506a, is the phase shift layer 502, which is located below the opening 5000, to expose a portion of the surface of the substrate 500. Next, referring to FIG. 5E, the patterned photoresist layer 5 0 6 a is removed with an appropriate acid solution. Next, referring to FIG. 5F, the patterned mask layer 50 is used as a mask, and the patterned phase shift layer 502a and the substrate 50, which are not located below the patterned mask layer 504a, are engraved, so that The above-mentioned substrate 500 is etched to a certain depth == residual phase shift layer 502b ', and the remaining transparent substrate 500 of a certain thickness forms a light-transmitting region. After 3', please refer to FIG. 5G for appropriate procedures. After removing the above-mentioned pattern = mask curtain layer 504a, an edge-light reduction composite phase shift photomask is manufactured. The advantages of the invention are shown above. The present invention has a manufacturing method of the present invention which is compared with the conventional edge-light reduction method. No alignment step is required, so there is the advantage of early and easy control between processes. The following advantages: The manufacturer of the combined phase shift mask performs complex alignment and positioning of the light transmitting area. According to the manufacturing method of the present invention, although the present invention The scope of the present invention is disclosed in a preferred embodiment. Anyone who is familiar with this, is not used to limit the Aurora m na team miT · 细 丨 面 h --- s without departing from the scope of the present invention.

0503-7730TWF1; TSMC2001 -1752,1753; f e 1 i c i a. P t c p. 14 544767 Case No. 91117361 A_η Revision V. Explanation of the invention (12) Spirit. Within the scope, various modifications and retouching can be done. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application. 1B · 0503-7730TWF1; TSMC2001-1752,1753; felicia.ptc p.15 544767 Huangli—1U17361 The simple illustration of the diagram can be more obvious and easy to understand '' For detailed explanations, for the purpose, characteristics and Advantages The following describes a preferred embodiment in conjunction with the accompanying drawings: The figure is self-explanatory: Figure 1A is a top view showing a conventional edge-difference composite phase shift mask. Fig. 1B is a cross-sectional view showing a conventional edge-diffusion composite phase shift optical army. Figure 1C is a schematic diagram illustrating the amplitude of the electric field under exposure of the edge-dimmer composite phase shift mask according to Figure 1A. Figure 1D is a schematic diagram illustrating wafer space image and electric field amplitude intensity under exposure of the edge-dimmer composite phase shift mask according to Figure 1A. Figure 1E is a schematic diagram illustrating the wafer space image and light intensity under the exposure of the edge-dimming composite phase shift mask according to Figure 1A. Fig. 2A to Fig. 2 are cross-sectional views showing the manufacturing process of a conventional edge-diffusion composite phase shift mask. Figures 3A to 3D are cross-sectional views showing the manufacturing process of a preferred embodiment of the edge-light-reduction composite phase shift mask according to the present invention. Figures 4A to 4F are cross-sectional views showing the manufacturing process of another preferred embodiment of the edge-dimmer composite phase shift mask according to the present invention. Figures 5A to 5G are cross-sectional views showing the manufacturing process of another preferred embodiment of the edge-light reduction composite phase shift mask according to the present invention. Symbol Description:

0503-77 30TWF1; TSMC20 (H -1752, 1753; fe 1 ici a. Ptc p. 16 544767 _ case number 91117361 _ year, month and day correction diagrams simply explain 20, 100, 300, 400, 500 ~ transparent substrate; 2 2, 102, 3 02, 402, 50 2 ~ phase shift layer; S ~ edge phase shift zone; I ~ light transmission zone; 1 04, 30 4, 40 4, 50 4 ~ mask layer; 106, 306 ~ 1st photoresistor; 406, 506 ~ photoresistor; 10 2a, 302a, 402, 502a ~ patterned phase shift layer; 104a, 304a, 404a, 504a ~ patterned mask layer; 106a, 306a ~ patterned first Photoresist; 40 6a, 506a ~ patterned photoresist; 3 000, 400 0, 5000 ~ transparent area; 3 0 0 0 a, 4 0 0 0 a, 5 0 0 0 a ~ inverted T-shaped opening; 3 0 8a ~ remaining second photoresist; d ~ substrate #etched depth.

Claims (1)

544767 In the method for manufacturing a light-shifting mask, the etching of the mask layer is performed by a dry etching method. Amendment 6 · The manufacturing method of the edge-dimming composite phase $ mask as described in item 1 of the scope of the patent application, wherein the isotropic etching of the above-mentioned phase shift layer is performed by a dry-etching method. 7 · The method for manufacturing an edge-light reduction composite phase shift mask according to item 1 of the scope of patent application, wherein the above-mentioned transparent substrate is etched by a dry etching method. 8. The method for manufacturing an edge-light-reducing composite phase and a photomask according to item 1 of the scope of the patent application, wherein forming the patterned first photoresist is performed by a spin coating method. 9. A method for manufacturing an edge dimming composite phase shift photomask, comprising: providing a light-transmitting substrate; sequentially forming a phase shift layer and a mask layer on the surface of the substrate; forming a patterned first photoresist on The surface of the mask layer; using the patterned first photoresist as a mask, etching the mask layer to form an opening to expose the surface of the phase shift layer; removing the patterned first photoresist; isotropic along the opening The phase shift layer is etched to form an inverted T-shaped groove between the cover layer and the phase shift layer. A second photoresist layer is formed to fill the inverted τ-shaped groove. The cover layer is used as a cover. Remove part of the second photoresist layer, ’Along the opening with anisotropic etching to leave the second under the mask layer 0503-773OTWl; TSMC200M752,1753; felicla.ptc Page 19 544767 Case No. 91117361 VI. Patent application scope Photoresist layer part; Use the patterned mask layer and residual photoresist as the mask to etch the transparent substrate to A certain depth to form a light transmitting area; and removing the remaining second photoresist and the mask layer. 1 0. The method for manufacturing an edge-light-reducing composite phase shift reticle according to item 9 of the scope of the patent application, wherein the transparent substrate is made of quartz. 1 1 · The method for manufacturing an edge-dimmer composite phase shift mask according to item 9 of the scope of the patent application, wherein the phase shift layer is composed of molybdenum oxynitride silicon (MoS i ON). 1 2 · The manufacturing method of the edge-light reduction composite phase shift photomask according to item 9 in the scope of the patent application, wherein the mask layer is made of metal chromium (Cr) 1 3 · as item 9 in the scope of patent application In the manufacturing method of the edge-light reduction composite phase shift mask, the etching of the mask layer is performed by a dry etching method. / 1 4 · The method for manufacturing an edge-light reduction composite phase-shift mask according to item 9 of the scope of the patent application, wherein the isotropic etching of the phase-shift layer is performed by a dry-contact engraving method. 1 5. The method for manufacturing an edge-light-reduction composite light shifting mask as described in item 9 of the scope of patent application, wherein the above-mentioned transparent substrate is etched using the $ method. ⑷ 1 6. The manufacturing method of the edge-light reduction composite type light-shifting mask according to item 9 of the scope of the patent application, wherein the patterned first photoresist-based spin coating method is performed. use 0503-7730TWF1; TSMC2001-1752,1753; felicia.ptc p.20 544767 The amendments include: 17 · A method for manufacturing an edge-dimming composite phase shift photomask, which includes providing a light-transmitting substrate; sequentially forming a phase-shifting layer and a mask layer on the surface of the transparent substrate; patterning the mask Layer to form an opening to expose the surface of the phase shifter; 9 the opening is isotropic and the phase shift layer is etched to form an inverted τ-shaped groove between the mask layer and the phase shift layer; and The mask layer is a mask, and the substrate that is not covered by the mask layer is anisotropically etched to a certain depth to form a light transmitting region with a phase angle of 180 degrees. 18 · The method for manufacturing an edge-light-reducing composite phase-shifting photomask according to item 17 of the scope of patent application, wherein the light-transmitting substrate is made of quartz. 19 · The method for manufacturing an edge-light-reduction composite phase shift mask according to item 17 in the scope of the patent application, wherein the phase shift layer is made of molybdenum oxynitride silicon (MoS i ON). 2 0. The manufacturing method of the edge-light reduction composite phase shift photomask according to item 17 of the scope of patent application, wherein the mask layer is made of metallic chromium (Cr). 21 · The manufacturing method of the edge-light-reduction composite phase shift mask described in item 17 of the scope of the patent application, wherein the isotropic #etching phase shift layer described above is performed by dry engraving. 544767 ——--- Case No. 91117361 _Year_Month__g_Amendment____. 6. Scope of Patent Application 2 2 · Manufacturing method of edge-light reduction composite phase shift photomask as described in item 17 of the scope of patent application The etching of the transparent substrate is performed by a dry etching method. 2 3 · A method for manufacturing an edge-light reduction composite phase shift photomask, including providing a light-transmitting substrate; sequentially forming a phase-shift layer, a mask layer, and a photoresist layer on the surface of the substrate; Patterning the photoresist layer to form an opening to expose the surface of the mask layer; isotropically etching the mask layer along the opening to form an inverted T-shaped groove between the photoresist layer and the mask layer portion A photoresist layer is used as a cover screen, and a phase shift layer not covered by the photoresist layer is removed by anisotropic etching to expose part of the substrate surface; the photoresist layer is removed; the cover layer is used as a cover For the curtain, the phase shift layer and the substrate not under the mask layer are etched so that the substrate is etched to a certain depth; and the mask layer is removed. 2 4 · The method for manufacturing an edge-light-reducing composite phase-shift mask according to item 23 of the scope of the patent application, wherein the light-transmitting substrate is made of quartz. 2 5 · The manufacturing method of the edge-light reduction composite phase shift mask according to item 23 of the scope of the patent application, wherein the phase shift layer is made of molybdenum oxynitride (MoS iON). / 544767 --- 91117361 _year ^ ___ g -__ VI. Scope of patent application 2 6 · The manufacturing method of edge-light reduction composite phase shift reticle as described in item 23 of the patent application, where the above-mentioned green curtain layer is Consists of metallic chromium (Cr). '2 7 · The manufacturing method of the edge-dimmer composite phase-shifting photomask as described in Item 23 of the patent application, wherein the isotropic etching of the mask layer is performed by a dry etching method. 2 8 · The method for manufacturing an edge-light reduction composite phase shift mask according to item 23 of the scope of patent application, wherein the phase shift layer is anisotropically etched by a dry etching method. 2 9 · The manufacturing method of the edge-light reduction composite phase-shifting photomask according to item 23 of the scope of the patent application, wherein the above-mentioned transparent substrate is performed by dry etching. 30. The method for manufacturing an edge-light-reducing composite phase-shift mask according to item 23 of the scope of the patent application, wherein forming the photoresist layer is performed by a spin coating method. 0503-7730WF1; TSMC2001-1752,1753; felicia.ptc p.23