TW540126B - Method of monitoring edge bevel rinse and wafer edge exposure - Google Patents
Method of monitoring edge bevel rinse and wafer edge exposure Download PDFInfo
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540126 五、發明說明(1) 發明之領域 本發明係提供一種檢測晶邊清洗(edge bevel rinse, EBR)以及晶邊曝光(wafer edge exp〇sure,ffEE)異常的方 法’進而可監測機械手臂(main arm)的傳送精確度。 背景說明 在半 幾乎都是 染的機會 用來偵測 與一些包 輸系統。 送到晶圓 斷,用來 論上如果 偵測出大 輸系統無 不會有誤 導體製程中 以自動化的 。基於這個 設備中所置 括用來傳輸 這些經由晶 傳輸系統中 作為機械手 晶圓偵測裝 量晶片在設 誤,以確保 差〇 度的考量 以避免任 體設備中 定位的晶 臂(ma i η 測所得之 圓傳輸.系 指示的依 度達到要 並將信號 製程設備 ,因為 設備來 考量, 放晶圓 晶片之 圓偵測 ,然後 臂下一 置本身 備中的 晶片被 有潔淨 傳輸, 在半導 的正確 機械手 裝置偵 透過晶 個動作 的靈敏 定位, 傳輸至 ’ 晶片 何造成 ,都設 圓偵測 arm )的 信號, 統的運 據。因 求,便 傳達至 之後的 的傳輸 晶片污 有一些 裝置, 晶圓傳 皆會被 算、判 此,理 能正確 晶圓傳 定位都 的邏實;::時,卻容易因為種種如晶圓傳輸系統 素,而影響晶Π::、ϋ械:差以及零件損耗等之因 -?傳輸至製程设備後之定位。當晶片被傳540126 V. Description of the invention (1) Field of the invention The present invention provides a method for detecting abnormalities of edge bevel rinse (EBR) and wafer edge exposure (wafer edge exposure (ffEE)), thereby monitoring a robot arm ( main arm). Background note Almost all chances of infection are used to detect and some containment systems. It is sent to the wafer to break. It is used to say that if the large transmission system is detected, there will be no errors. The conductor process is automated. Based on the equipment included in this device, the wafers used to detect the loading wafers as robotic wafers in the crystal transfer system are set to ensure that the difference of 0 degrees is avoided to avoid the positioning of the crystal arms (ma i η The measured circle transmission is the required degree of instruction and the signal processing equipment is taken into consideration because of the equipment. The circle detection of the wafer wafer is placed, and then the wafer in the arm itself is cleanly transmitted. The correct robotic device of the guide detects the sensitive positioning through the movement of the crystal, and transmits it to the signal of the chip, which is set to the circle detection arm. Due to the requirements, there are some devices that are transmitted to the subsequent transmission wafer contamination. The wafer transmission will be counted and judged. It is reasonable to correctly position the wafer transmission. ::: But it is easy because of all kinds of wafers. Transmission system factors, which affect the factors such as crystal Π ::, ϋ: poor, and parts loss-? Positioning after transmission to process equipment. When the chip is passed
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五、發明說明(2) 輸至製程設備後之定位不夠正確時,往往會影響到完成後 結構的正確性。由於在精密的半導體製程當中,不僅每_ 層結構與上、下層結構的相對位置極為重要,同層、结$ $ 不同元件間之相對位置亦非常重要,所以定位若不正確將 造成製程上的問題,尤其是在定義(define)各結構形狀: 位置的黃光製程(photolithography process)中,此種定 位不正確的問題更是造成直接的影響。此外,若是在運送 及傳遞晶片的過程中’發生任何定位不準或移動位移的_ 形,更有可能會影響後續製程,甚至導致晶片損毀的狀月 況0 以習知之黃光製程為例,配備有多個機械手臂的_貫 作業光阻覆蓋顯影(t r a c k )機台,往往必需被安排以_定 頻率的預防保養(preventative maintenance,PM),以避 免發生由於定位不準確而產生的品質問題·。而預防保養中 的檢查(check)以及校正(calibration)等程序,所耗費的 時間相當可觀,設備必需掛當(down),嚴重影響產能。 眷 請參考圖一,圖一為習知黃光製程之流程圖30。如圖 一所示,首先提供至少一已完成部份結構(未顯示)之半導 體晶片(步驟10),半導體晶片的尺寸可以為2 0 0mm或是 3 0 0mm。接著利用機械手臂將半導體晶片傳輸至一 一貫化 (i η 1 i n e )的光阻覆蓋顯影機台(步驟1 2 ),然後於一旋轉 塗佈平台上進行一光阻旋塗(spin-on)製程(步驟14),以V. Description of the invention (2) When the positioning is not correct after input to the process equipment, it often affects the correctness of the structure after completion. Because in the precise semiconductor manufacturing process, not only the relative position of each layer structure and the upper and lower structure is extremely important, but also the relative positions of different components in the same layer and junction are very important, so incorrect positioning will cause The problem, especially in the definition of the structure shape: the position of the photolithography process, the problem of this incorrect positioning is even more direct. In addition, if any “inaccurate positioning or moving displacement” occurs during the process of conveying and transferring the wafer, it is more likely to affect the subsequent process and even cause the wafer to be damaged. Taking the conventional yellow light process as an example, The photo-resistance covering development (track) machine equipped with multiple robotic arms often has to be arranged with preventive maintenance (PM) at a fixed frequency to avoid quality problems due to inaccurate positioning ·. However, procedures such as check and calibration in preventive maintenance take considerable time, and the equipment must be down, which severely affects production capacity. Please refer to Figure 1, which is a flowchart 30 of the conventional Huangguang process. As shown in FIG. 1, at least one semiconductor wafer having completed structure (not shown) is first provided (step 10). The size of the semiconductor wafer may be 200 mm or 300 mm. Next, the semiconductor wafer is transferred to a uniform (i η 1 ine) photoresist-covering developing machine using a robot arm (step 12), and then a spin-on is performed on a spin-on coating platform. ) Process (step 14) to
第7頁 540126 五、發明說明(3) 於半導體晶片之上形成一光阻層。接著,進行一被稱為晶 邊清洗(edge bevel rinse,EBR)的清洗製程(步驟16)。 請參考圖二,圖二為晶邊清洗製程(步驟1 6 )的示意 圖。如圖二所示’晶邊清洗製程是先將喷嘴(n〇zzle)5(^ 位於一個等待(standby)位置52,等待位置52係位於半導 體晶片54正上方投影位置55以外之區域,再將半導體晶片 54以定速旋轉,並使喷嘴5〇於一甲位置56以及一乙位置58 之間往覆(back and forth)移動。其中,甲位置56亦位於 半導體晶片5 4正上方投影位置5 5以外之區域,乙位置5 8則 位於半導體晶片5 4正上方投影位置5 5以内之區域,喷嘴5 〇 係從甲位置56經由半導體晶片54的邊緣投影位置57,而移 動至乙位置5 8,再經由半導體晶片的邊緣投影位置5 7,而 移動至甲位置5 6。半導體晶片的邊緣投影位置5 7與乙位置 58之間的距離d,即為晶邊清洗的範圍,同時喷嘴5〇與半 導體晶片5 4的表面約呈4 5度角。 然後利用另一機械手臂,將半導體晶片輸送至一熱墊 板(11〇七01&16)之上,以進行一硬烤(^&1^1^]^)製程(步 驟18)。進行硬烤製程的目的,在於將光阻層内之溶劑 (solvent)從光阻層驅除,使光阻層從原來的液態,成為 ,態的薄膜’並使得光阻層對晶片表面的附著(adhesi 能力加強,以便利後續的製程。完成後依序進行一曝光製 程(exposure,步驟20)以及一顯影製程(devel〇pment,步Page 7 540126 V. Description of the invention (3) A photoresist layer is formed on the semiconductor wafer. Next, a cleaning process called edge bevel rinse (EBR) is performed (step 16). Please refer to FIG. 2, which is a schematic diagram of a crystal edge cleaning process (step 16). As shown in Figure 2, the crystal edge cleaning process is to first locate the nozzle 5 (^ at a standby position 52, the waiting position 52 is located outside the projection position 55 directly above the semiconductor wafer 54, and then The semiconductor wafer 54 rotates at a constant speed and moves the nozzle 50 back and forth between a position A and a position 58. Among them, the position A is also located at the projection position 5 directly above the semiconductor wafer 54. The area other than 5 is located at position B. 5 is located directly above the semiconductor wafer 5 4 at the area within projection position 5 5. The nozzle 50 is moved from the position A to the position 57 through the edge of the semiconductor wafer 54 to the position B. Then, it moves to the A position 56 by the edge projection position 57 of the semiconductor wafer. The distance d between the edge projection position 57 of the semiconductor wafer and the B position 58 is the range of crystal edge cleaning, and the nozzle 5 It is at an angle of about 45 degrees with the surface of the semiconductor wafer 54. Then, the semiconductor wafer is transported onto a thermal pad (1107 & 16) by another robot arm for a hard roasting (^ & 1 ^ 1 ^] ^) process (step Step 18). The purpose of the hard baking process is to remove the solvent in the photoresist layer from the photoresist layer, so that the photoresist layer is changed from the original liquid state into a thin film of the state, and the photoresist layer is aligned with the wafer. Surface adhesion (adhesi capability is enhanced to facilitate subsequent processes. After completion, an exposure process (exposure, step 20) and a development process (developerment, step
540126 五、發明說明(4) 二以二?阻牟層中形成所需要的圖案。最後進行-顯 :大的ί驟24),以確定形成於光阻層中之圖案 的大小…位置均無誤。當然於硬烤製 次的晶片傳輸。 向匕3許多 進行晶邊清洗的目的,在於將半導體晶片邊緣内大約 1.5mm之光阻層洗淨。加入這一道製程,可有效避免於 成之後,,導體晶片被輸送至熱墊板時,機 械被液態的光阻所污染。此外,纟其他後績製程中 (甚至非黃光製程),亦常需使 手臂來僂铪束逡棘曰!^需使用附有爪子(clamp)的機械 阻層抓破==,爪子容易將半導體晶片邊緣的光 層抓破,以至於產生微粒(particle),造 於加入晶邊清洗製程,這個問題也得以被解決。’、— 導體黃光製程卻面臨一個問題.,即為了保證半 =;曰二:傳輸至每一個(process unit)時的定位正確丰 花的脖Η調权機械手臂’而每次調校好幾個機械手臂所 種二造^產能的損失。解決此問胃,就2 時丄ΪΪ ί 的監測方式’以於黃光製程 r避J: 送位置的精確1,達到警示的效果,才540126 V. Description of the invention (4) Two to two? A desired pattern is formed in the resist layer. Finally, perform-display: big step 24) to determine the size ... location of the pattern formed in the photoresist layer. Of course, for hard-boiled wafers. The purpose of the crystal edge cleaning to the dagger 3 is to clean the photoresist layer of about 1.5 mm in the edge of the semiconductor wafer. Adding this process can effectively prevent the machine from being contaminated by the liquid photoresist when the conductor wafer is transported to the thermal pad after completion. In addition, in other post-production processes (even non-yellow light processes), it is often necessary to use the arm to pinch the spine! ^ Need to use a mechanical barrier with a claw (clamp) to scratch ==, the claw is easy to The optical layer on the edge of the semiconductor wafer was scratched, so that particles were generated, and the crystal edge cleaning process was added. This problem was also solved. ', — The conductor yellow light process is facing a problem. In order to ensure half =; said two: the correct positioning of Fenghua's neck adjustment robot arm when transmitting to each (process unit), and adjust several times at a time. The loss of production capacity of two robotic arms. To solve this problem, the monitoring method at 2 o’clock is based on the yellow light process r to avoid J: the exact position of 1 is sent to achieve the warning effect.
月匕避免過於頻繁的調校動作。 T 發明概述Moon Dagger avoids too frequent adjustments. T invention overview
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因此’本發明之目 (main arm)的方法,應 中,以解決上述問題。 的在於提供一種監測機械手臂 用在光阻覆蓋顯影機台(track)之 之最佳實施例中’本發明即係利用一種檢測 日日邊 >月洗(edge bevel rinse, EBR)以及晶邊曝光(wafer exposure, WEE)異常的方法,來監測機械手臂(main arm)的傳送精確度。首先提供一晶片,且該晶片之上包含 有複數個與該晶片之圓心相距一第一距離之對稱標記 (mark) ’接著將該晶片表面塗佈一光阻層,然後利用一晶 邊清洗(edge bevel rinse,EBR)裝置來清洗該光阻層, 以於該晶片之上形成一圓形光阻層圖案,並使得該圓形光 阻層圖案之各外緣(〇 u t e r e d g e)距離該晶片之圓心至少一 第二距離,最後對該晶片進行烤乾、曝光以及顯影等製 程’並進行一顯影後檢查步驟,以測量該第一距離與各該 第,一距離之差值。 本發明之主要特徵在於利用一具有標記的晶片來進行 光阻塗佈後的晶邊清洗製程,如此一來,不僅能藉由標記 與剩餘光阻層的相對位置來判別晶片.在設備中的定位是否 有誤,進而確認機械手臂的傳送精確度,以節省不必要的 調校動作所花費的時間。同時,又可以提供一個再檢查 I (doub 1 e check)的方法,以防止顯影後檢查步驟執行有錯 I誤時,未即時把關,因而大量產品繼續製造流程,造成重Therefore, the method of the "main arm" of the present invention should be adopted to solve the above problems. The purpose of the invention is to provide a monitoring robot arm which is used in a photoresist-covered developing machine in a preferred embodiment. The present invention uses a method to detect the sun and the sun's edge > edge bevel rinse (EBR) and crystal edges An abnormal method of wafer exposure (WEE) to monitor the transmission accuracy of the main arm. First, a wafer is provided, and the wafer includes a plurality of symmetrical marks that are at a first distance from the center of the wafer. The wafer surface is then coated with a photoresist layer and then cleaned with a crystal edge ( edge bevel rinse (EBR) device to clean the photoresist layer to form a circular photoresist layer pattern on the wafer, and make the outer edges of the circular photoresist layer pattern (〇uteredge) away from the wafer. The center of the circle is at least a second distance, and finally the wafer is subjected to processes such as baking, exposure, and development, and a post-development inspection step is performed to measure a difference between the first distance and each of the first and first distances. The main feature of the present invention is to use a wafer with a mark to perform the crystal edge cleaning process after photoresist coating. In this way, not only can the wafer be judged by the relative position of the mark and the remaining photoresist layer. Whether the positioning is wrong, and then confirm the transmission accuracy of the robotic arm, to save time spent unnecessary adjustment. At the same time, a method of re-checking I (doub 1 e check) can be provided to prevent the inspection steps after development from being performed incorrectly. If the check is not performed immediately, a large number of products continue to be manufactured, causing serious problems.
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時,機械手臂被液態的光阻 製程中(甚至非黃光製程), 片以及半導體晶片邊緣的光 (particle)〇 所污染。同時避免在其他後續 機械手臂的爪子(clamp)將控 阻層抓破,以至於產生微粒 二後利用另一機械手f,將控片α及半導體晶片輸送 ^ 一熱塾板(hot Plate)之上,以進行一硬烤(hard 裝程(步驟108)。進行硬烤製程的目的,在於將光阻層内 ,溶劑(sol verity從光阻層驅除,使光阻層從原來的液 態,成為固態的薄膜,並使得光阻層對晶片表面的附著 (adhesion)能力加強,以便利後續的製程。完成後,依序 進行一曝光製程(exp〇sure,步驟11〇)以及一顯影製程 (development,步驟112),以於光阻層中形成所需要的圖 案。最後進行一顯影後檢查(ADI,步驟114),以確定形成 於光阻層中之圖案的大小與位置均無誤。同時於顯影後檢 查時,可依控片在進行黃光製程前,已完成於其上的結 構,以及已進行的製程,來作不同目的的檢查或測量 (measurement)。當然,於硬烤製程完成後,黃光製程完 成前,另可包含有數個機械手臂輸送動作。 當控片以及半導體晶片被傳輸至旋轉塗佈平台的定位 非常準確時’於晶邊清洗製程後,控片上剩餘之圓形光阻 層的圓心將會與控片以及半導體晶片的圓心同心,不至於 有偏移的情形。而當控片或半導體晶片被傳輸至旋轉塗佈At the same time, the robot arm was contaminated by particles (particles) on the edge of the wafer and semiconductor wafer during the liquid photoresist process (even non-yellow process). At the same time, the claws (clamps) of other subsequent robotic arms are prevented from scratching the control layer, so that after the generation of particles two, the other robotic hand f is used to transport the control sheet α and the semiconductor wafer ^ a hot plate To perform a hard baking process (step 108). The purpose of the hard baking process is to remove the solvent (sol verity) from the photoresist layer in the photoresist layer, so that the photoresist layer is changed from the original liquid state to The solid-state film enhances the adhesion of the photoresist layer to the wafer surface to facilitate subsequent processes. After completion, an exposure process (expOsure, step 11) and a development process are sequentially performed. (Step 112) to form a desired pattern in the photoresist layer. Finally, a post-development inspection (ADI, step 114) is performed to determine that the size and position of the pattern formed in the photoresist layer are correct. For post-inspection, you can check or measure different purposes according to the structure that the control film has completed before the yellow light process, and the process that has been performed. Of course, after the hard-bake process is completed, Before the completion of the yellow light process, it can also include several robotic arm conveying actions. When the wafer and the semiconductor wafer are transferred to the spin coating platform, the positioning is very accurate. After the wafer edge cleaning process, the remaining circular photoresist on the wafer The center of the layer will be concentric with the center of the wafer and the semiconductor wafer, so there will be no deviation. When the wafer or semiconductor wafer is transferred to the spin coating,
第12頁 540126 五、發明說明(8) 平台時的定位有誤時,於晶邊、、杳、味制众μ „ ^ m ^ ^ μ ^ u日日違,肖冼製程後,偏移的現象將 會發生。目為控片之上已被刻上明顯對 號,故於顯影後檢查時,即可萨由於志矛丨二^下限直綠忑 1 4糟甶檢查剩餘光阻層與上下 限直線記號的相對位置,來監測嫵只 + π州機械手臂傳送的精確度。 如圖四A^t示,當機械手劈;^ a 丁牙運作正常時, 餘之圓形光阻層2 0 2的邊緣,將合你认抓仏 ^ ^ 將會位於距離控片2 0 0邊緣1 · 5fflm處,也就是正好在上下限吉硷七〇占0/^, , t 广欧罝線圮號2 0 4的中央。當機械 手臂的傳輸定位有問題時,控片200上剩餘之圓形光阻層 2 02的位置將會偏移,而造成如圖四B的結果,以上的現象 是在晶邊清洗製程(步驟106)時,清洗機構本身的動作正 碟無誤的前提下。 然而本發明亦可用來監測晶邊清洗機構的運作。如圖 四C所示’當機械手臂的定位正常,而晶邊清洗過寬(超過 設定值)時’控片2 0 0上剩餘之圓形光阻層2 0 2的邊緣,會 較正常情況下更靠近控片2 〇 〇的圓心。又如圖四D所示,當 機械手臂的定位正常,而晶邊清洗過窄(小於設定值)時, 控^ 2 0 0上剩餘之圓形光阻層2 0 2的邊緣,會較正常情況下 ,靠近控片20 0的邊緣。如圖所示.,當機械手臂的傳輸 定位有問題,且晶邊清洗過寬時,控片2 〇 〇上剩餘之圓形 光阻層2 0 2不但偏移,半徑亦變小。而如圖四ρ所示,當機 械手臂的傳輸定位有問題,且晶邊清洗過窄時,控片2 0 0 上剩餘之圓形光阻層2 〇 2不但偏移,半徑亦變大。Page 12 540126 V. Description of the invention (8) When the positioning of the platform is wrong, the crystal edge, 杳, and taste make the μ μ ^ ^ m ^ ^ μ ^ u Day after day, after Xiao Cheng's process, the offset The phenomenon will occur. The eye is marked with a clear check mark on the control film, so when the inspection is performed after the development, you can use the spear 丨 2 ^ lower limit straight green 忑 1 4 to check the remaining photoresist layer and the upper The relative position of the lower limit line mark is used to monitor the transmission accuracy of the robot + π state robot arm. As shown in Figure 4A ^ t, when the manipulator splits; ^ a when the dentition is operating normally, the remaining photoresist layer 2 The edge of 0 2 will match your grasp. ^ ^ Will be located at the distance of the edge of the control piece 2 0 5fflm, which is exactly at the upper and lower limit of 硷 70, which accounts for 0 / ^, t. The center of No. 2 0 4. When there is a problem with the positioning of the robot arm, the position of the circular photoresist layer 202 on the control sheet 200 will shift, resulting in the result shown in Figure 4B. The above phenomenon is During the crystal edge cleaning process (step 106), the action of the cleaning mechanism itself is correct. However, the present invention can also be used to monitor the crystal edge cleaning machine. As shown in Figure 4C, 'When the positioning of the robot arm is normal, and the crystal edge is too wide (beyond the set value)', the edge of the circular photoresist layer 2 0 2 on the control plate 2 0 will be It is closer to the center of the control piece 2000 than normal. As shown in Figure 4D, when the positioning of the robot arm is normal and the crystal edge is too narrow (less than the set value), the rest of the control ^ 2 0 0 The edge of the circular photoresist layer 202 is closer to the edge of the control piece 200 than normal. As shown in the figure, when the transmission positioning of the robot arm is problematic and the crystal edge is too wide, the control piece The circular photoresist layer 202 remaining on 2000 not only shifts, but also the radius becomes smaller. As shown in Figure 4ρ, when the transmission positioning of the robot arm is problematic and the crystal edges are too narrow, the control piece The circular photoresist layer 2 on 2 0 2 not only shifts, but also has a larger radius.
第13頁 540126 五、發明說明(9) 由於 阻塗佈以 剩餘光阻 誤,進而 校動作所 (double 行有錯誤 造成重大 監測晶邊 是否發生 片,來進行光 能藉由樑記與 的定位是否^ 省不必要的調 個再檢查 (ADI)步騍執 續製造流程, 法又可以用來 知晶邊清洗時 本發明係利用〜泡 及晶邊清洗製帛,、對稱襟記的晶 層的相對位置來判=此一來,不僅 花費的時間。J送精確度,以節 咖的方法,:二:以提供一 拄去而政L M防止顯影後檢查 時,未即時把關, 招土认法f * 因而大夏產品繼 Ϊ失的情形產纟。並且,本發明方 清Ϊ機構本身動作的正確性,以: 過寬或太小的情形。 相 方法, 以及晶 層的相 機械手 時,又 止顯影 繼續製 又可以 晶邊清 使用頻繁的調 有標記的晶片 此’不僅可以 片在設備中定 ’以卽癌不必 檢查(doub 1 e 有錯誤時,未 大損失的情形 洗機構本身動 機械手臂的 阻塗佈製程 與剩餘光阻 度,並確認 動作。同 方法,以防 ’大量產品 本發明方法 性,以得知 較於習知 本發明利 邊清洗製 對位置來 臂的傳送 可以提供 後檢查步 造流程, 用來監測 洗是否過 技術中 用一具 程,因 判別晶 精確度 一個再 驟執行 造成重 晶邊清 寬或太小。 校來監測 來進行光 藉由.標記 位的正確 要的調校 check 即時把關 。並且, 作的正確 以上所述僅為本發明之較佳實施例,凡依本發明申請 第14頁 540126Page 13 540126 V. Description of the invention (9) Due to the resistance of the coating to the remaining photoresist error, the correction of the operation (double line error caused a major monitoring of the crystal edge to see whether a slice occurred) for the positioning of light energy by Liang Jihe Whether or not ^ save unnecessary ADI steps to carry out the manufacturing process, and the method can also be used to know when the crystal edge is cleaned. The present invention uses ~ bubble and crystal edge cleaning to make the crystal, symmetrical crystal layer Judging by the relative position = this way, not only the time it takes. J to send the accuracy to the method of saving coffee, two: to provide a quick while LM to prevent post-development inspection, did not check immediately, recruiting Method f * Therefore, the Daxia product is lost. And the correctness of the mechanism of the present invention is correct: in the case of too wide or too small. Phase method, and phase manipulator of the crystal layer. You can stop the development and continue to make the crystals. You can use the marked wafers frequently. This 'not only can be set in the equipment.' It is not necessary to check for cancer (doub 1 e. If there is an error, there is no large loss. Wash the mechanism itself.) Moving machinery The resist coating process of the arm and the remaining photoresistance, and confirm the action. The same method, in order to prevent 'a large number of products, the method of the present invention, in order to know that compared to the conventional edge cleaning system of the present invention, the position of the arm can be provided The post-checking process is used to monitor whether the washing process is used in a process, because the recrystallized edges are widened or too small because of the accuracy of the discernment of the crystals, and the recrystallized edges are too wide or too small. The correct check is checked immediately. And what is done correctly is only the preferred embodiment of the present invention. Any application according to the present invention on page 14 540126
第15頁 540126 圖式簡單說明 112 顯影製程 114 顯影後檢查 130 流程圖 200 控片 202 圓形光阻層 204 上下限直線記號Page 15 540126 Brief description of the drawing 112 Development process 114 Inspection after development 130 Flow chart 200 Control sheet 202 Circular photoresist layer 204 Upper and lower limit line marks
第17頁Page 17
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1607738A1 (en) * | 2004-06-16 | 2005-12-21 | Leica Microsystems Semiconductor GmbH | Method and system for wafer inspection |
US7413963B2 (en) | 2006-02-13 | 2008-08-19 | Touch Micro-System Technology Inc. | Method of edge bevel rinse |
CN102856224A (en) * | 2011-06-30 | 2013-01-02 | 细美事有限公司 | Method and apparatus for processing wafer edge portion |
CN103794468A (en) * | 2012-10-29 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Bevel etch method |
CN105629679A (en) * | 2016-03-22 | 2016-06-01 | 武汉华星光电技术有限公司 | Edge exposure machine and edge exposure region coding method |
CN109696798A (en) * | 2017-10-23 | 2019-04-30 | 力晶科技股份有限公司 | The maintaining method of photomask and photomask carrying platform |
CN112802772A (en) * | 2019-11-13 | 2021-05-14 | 华邦电子股份有限公司 | Monitoring method of semiconductor process |
US11887898B2 (en) | 2019-10-23 | 2024-01-30 | Winbond Electronics Corp. | Method of monitoring semiconductor process |
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2002
- 2002-03-14 TW TW91104832A patent/TW540126B/en not_active IP Right Cessation
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1607738A1 (en) * | 2004-06-16 | 2005-12-21 | Leica Microsystems Semiconductor GmbH | Method and system for wafer inspection |
US7413963B2 (en) | 2006-02-13 | 2008-08-19 | Touch Micro-System Technology Inc. | Method of edge bevel rinse |
CN102856224A (en) * | 2011-06-30 | 2013-01-02 | 细美事有限公司 | Method and apparatus for processing wafer edge portion |
CN102856224B (en) * | 2011-06-30 | 2015-10-07 | 细美事有限公司 | The processing method of wafer edge portion and device |
CN103794468A (en) * | 2012-10-29 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Bevel etch method |
CN105629679A (en) * | 2016-03-22 | 2016-06-01 | 武汉华星光电技术有限公司 | Edge exposure machine and edge exposure region coding method |
CN109696798A (en) * | 2017-10-23 | 2019-04-30 | 力晶科技股份有限公司 | The maintaining method of photomask and photomask carrying platform |
CN109696798B (en) * | 2017-10-23 | 2023-02-28 | 力晶积成电子制造股份有限公司 | Photomask and maintenance method of photomask bearing platform |
US11887898B2 (en) | 2019-10-23 | 2024-01-30 | Winbond Electronics Corp. | Method of monitoring semiconductor process |
CN112802772A (en) * | 2019-11-13 | 2021-05-14 | 华邦电子股份有限公司 | Monitoring method of semiconductor process |
CN112802772B (en) * | 2019-11-13 | 2024-06-11 | 华邦电子股份有限公司 | Method for monitoring semiconductor process |
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