CN112802772A - Monitoring method of semiconductor process - Google Patents
Monitoring method of semiconductor process Download PDFInfo
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- CN112802772A CN112802772A CN201911105743.4A CN201911105743A CN112802772A CN 112802772 A CN112802772 A CN 112802772A CN 201911105743 A CN201911105743 A CN 201911105743A CN 112802772 A CN112802772 A CN 112802772A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Abstract
The invention provides a monitoring method of a semiconductor process, which comprises the following steps. The process parameters are set at a first condition. And carrying out a first process to form a first film layer on the first wafer, wherein the first film layer does not cover the edge region of the first wafer. And shooting the first wafer with the first film layer by using an image acquisition device to obtain a first wafer image. And carrying out image recognition on the first wafer image to obtain first data. And judging whether the position of the first film layer deviates or not according to the first data.
Description
Technical Field
The present invention relates to semiconductor process, and more particularly to a method for monitoring a semiconductor process.
Background
The edge region is generally left blank in semiconductor processes. However, the remaining film's neutrality and the size or uniformity of the blank area cannot be effectively monitored.
Disclosure of Invention
The invention provides a monitoring method of a semiconductor process, which can effectively monitor the neutrality of a film layer and the size and uniformity of a blank area.
The invention provides a monitoring method of a semiconductor process, which is characterized in that a first film layer is formed on a first wafer, wherein the first film layer does not cover a crystal edge area of the first wafer. And shooting the first wafer with the first film layer by using an image acquisition device to obtain a first wafer image. And carrying out image recognition on the first wafer image to obtain first data. And judging whether the position of the first film layer deviates or not according to the first data.
According to an embodiment of the present invention, the image capturing device includes a camera of a charge coupled device or a complementary gold oxide semiconductor camera.
According to an embodiment of the present invention, the image capturing device includes a camera of a charge coupled device or a complementary gold oxide semiconductor camera.
According to an embodiment of the present invention, the first data includes a position offset of the first film layer along an X-axis and a position offset of the first film layer along a Y-axis.
According to an embodiment of the present invention, the method for monitoring a semiconductor process further includes inputting the first data into a static process control map.
According to an embodiment of the present invention, the monitoring method of the semiconductor process further includes: judging whether the position of the first film layer on the first wafer deviates or not according to the first data, and maintaining the process parameter at the first condition when the first data is within a preset threshold range so as to perform a second process on a second wafer; and when the first data exceeds the preset threshold range, performing batch automatic machine adjustment or manual machine adjustment, and setting the process parameters in a second condition to perform a second process on a second wafer.
According to an embodiment of the invention, the first process includes placing the first wafer in a chemical vapor deposition machine with a shielding ring for shielding the wafer edge to perform a deposition process.
According to an embodiment of the present invention, the material of the first film layer includes silicon carbide, silicon nitride and silicon oxide.
According to the embodiment of the invention, the first process comprises an edge washing process of the first wafer with the deposited film.
According to an embodiment of the present invention, the deposited film includes a copper plating film and a copper seed layer.
According to an embodiment of the present invention, the method for monitoring a semiconductor process further includes forming a barrier layer on the first wafer before forming the deposited film.
Based on the above, the invention can effectively monitor the neutrality of the film layer and the size and uniformity of the edge margin area by taking a picture through the image acquisition device and digitizing the obtained image.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1A is a schematic view of a processing tool according to an embodiment of the invention;
FIG. 1B is a schematic diagram showing a partial cross-section of the process chamber of FIG. 1A;
FIG. 1C is a schematic diagram showing a wafer image with uniform white regions;
FIG. 1D is a schematic diagram showing a wafer image with non-uniform white regions;
FIG. 2 is a schematic diagram of a method for monitoring a semiconductor process according to an embodiment of the present invention;
FIG. 3 is a diagram of an X-axis static process control according to an embodiment of the present invention;
FIG. 4 is a block diagram illustrating a machine control system;
fig. 5A and 5B are schematic cross-sectional views illustrating a method for fabricating a semiconductor layer according to another embodiment of the present invention.
Detailed Description
In the semiconductor process, some films are easy to lift at the edge of the wafer, so when forming such films, a shadow ring (shadow ring) can be directly installed in the deposition machine to shield the edge of the wafer, so that the film will not be deposited on the edge of the wafer. Alternatively, a blanket deposited film covering the entire wafer may be formed first, and then the deposited film at the edge of the wafer may be removed to leave the edge region blank.
However, the position of the film layer left blank in the edge bead region may vary according to the process parameters, and if the process parameters are not properly controlled (e.g., the horizontal or vertical position of the wafer is offset from the position of the shadow ring, or the nozzle position or flow rate of the edge bead cleaning machine), the edge bead blank may not be uniform.
Referring to fig. 2, in the embodiment of the invention, in steps S10 and S12, process parameters are set, and a film layer with a blank edge region is formed on the wafer. Then, step S14 is performed to acquire an image of the film layer on the wafer by the image acquisition device. Then, in step S16, the image is subjected to image recognition processing to obtain offset data of the relative position between the film layer and the wafer. Then, step S18 is performed to determine whether the position of the film is shifted according to the obtained data. If there is no deviation, the process of the next wafer is performed according to the originally set conditions. If there is a deviation, it is determined whether the machine is abnormal, step S20. If not, the batch automatic tuning is performed to readjust the process conditions, step S22. If the machine is abnormal, the manual adjustment is performed to readjust the process conditions. In this embodiment, the image capturing device may be, for example, a Charge Coupled Device (CCD) camera or a Complementary Metal Oxide Semiconductor (CMOS) camera. The image recognition processing of the image may be performed by a processor of the machine control system, for example.
Referring to fig. 1, a processing tool 100, such as a chemical vapor deposition tool, includes a plurality of process chambers (or process chambers) 12, 14, 16, a central transfer chamber 18, a transfer chamber 20, and an atmospheric chamber 22. The process chambers 12, 14, 16 are, for example, deposition chambers. The central transfer chamber 18 couples the process chambers 12, 14, 16 and the transfer chamber 20. The transfer chamber 20 couples the central transfer chamber 18 and the atmospheric chamber 22. The central transfer chamber 18 is at a higher vacuum than the transfer chamber 20, and the transfer chamber 20 is at a higher vacuum than the atmospheric chamber 22.
The process tool 100 further includes a plurality of robots 36. Robot 36 includes vacuum robot 30, transfer robot 32, and atmospheric robot 34, disposed in central transfer chamber 18, transfer chamber 20, and atmospheric chamber 22, respectively.
The wafer 10 is typically placed in a wafer carrier 24 prior to entering the deposition tool. The wafer carrier 24 is a typical component used to store, transport and process semiconductor wafers 10. In the present embodiment, the process tool 100 further includes an image capturing device 60. The image capture device 60 may be mounted in the central transfer chamber 18, the transfer chamber 20, or the atmospheric chamber 22. In some embodiments, the image capture device 60 may be mounted on the robot 36 (e.g., directly above the vacuum robot 30, the transfer robot 32, or the atmospheric robot 34). The image capture device 60 may also be mounted outside the process tool 100.
Referring to fig. 1A and 2, in step S10, process conditions are set. Various parameters of the process tool 100 are set to a first condition prior to performing the deposition process. Based on the set first condition, the atmospheric robot 34 in the atmospheric chamber 22 retrieves the wafer 10 from the wafer carrier 24 and then transfers the wafer to the vacuum robot 30 via the transfer robot 32. The vacuum robot 30 then places the wafer 10 in the process chamber 12.
Referring to fig. 1A and 1B, in the present embodiment, the chamber walls of the process chambers 12, 14, 16 are provided with a shadow ring 42 corresponding to the susceptor 40. The shadow ring 42 corresponds to the edge region ER of the wafer 10 placed on the susceptor 40.
Referring to fig. 1B and 2, in step S12, a film forming process is performed in the process chamber 12 according to the set first condition. A film layer 50 is formed on the wafer 10 not shielded by the shielding ring 42; the edge region ER shielded by the shielding ring 42 does not form the film 50, but is blank in the edge region ER. The material of the membrane layer 50 may be, for example, silicon carbide, silicon nitride or silicon oxide.
Referring to fig. 1B and 1D, the size of the gap P affects the size of the gas flow field G, and further affects the area of the film 50 and the blank region of the edge region ER. The pitch P can be controlled by adjusting the height (Z-axis) of the susceptor 40. In addition, the horizontal tilt of the susceptor 40 may cause a different gap P between the wafer 10 and the shadow ring 42, which may result in an undesirable offset or dimension and profile of the film 50.
Referring to fig. 1A, 1C, 1D and 2, after the film 50 is formed in the process chamber 12, the wafer 10 in the process chamber 12 is taken out by the vacuum robot 30. In step S14, the image capturing device 60 is used to take a picture of the wafer 10 to collect an image of the wafer 10 with the film 50 (referred to as a wafer image). The image capturing device 60 can capture images from directly above the wafer 10 or from a specific angle to obtain a top view image or a specific angle image of the wafer 10 with the film 50.
Referring to fig. 1C, 1D and 2, in step S16, the processor performs image recognition processing on the wafer image acquired by the image acquisition device 60 to obtain data of the relative position between the film layer 50 on the wafer image and the wafer 10. In step S18, the processor may determine whether the position of the film 50 on the wafer 10 is shifted according to the obtained data. In some embodiments, the processor may include executing a static artwork generation program. The static process control map (shown in fig. 3) may be generated by an offset of X and an offset of Y between the center of the film 50 and the center of the wafer 10. In addition, after the image capturing device 60 obtains the wafer 10 deposited with the film 50 at this time, the defect map system may be further used to draw a profile of the film 50 on the wafer 10, so as to further determine whether the offset of the film 50 belongs to the X-axis offset or the Y-axis offset.
The static process control map may include an X-axis static process control map (as shown in fig. 3) and a Y-axis static process control map (not shown). The data and the predetermined threshold range in the X-axis static process control map and the Y-axis static process control map can determine the offset degree of the X-axis and Y-axis positions of the film 50 on the wafer 10. The ideal offset is 0.
Referring to fig. 2 and 3, when the collected data values are within the predetermined threshold values T1 and T2, which indicates normal operation, good centering of the film 50, and uniform blank regions in the edge regions, as shown in fig. 1C, the film formation process for the next wafer 10 can continue according to the original first condition, step S12. When the collected data value exceeds the predetermined threshold T1 and T2, it indicates that the position deviation exceeds the tolerable level, the neutrality of the film 50 is poor, and the white space of the edge region is not uniform, as shown in fig. 1D.
FIG. 3 is an X-axis static process control diagram. This manages the X-axis offset of three wafers in each lot of the figure. In fig. 3, points a1, a2, a3 represent the X-axis offset of the deposited film on three wafers in the same lot a. The values at points a1, a2, a3 are all within the predetermined thresholds T1 and T2, which indicate that the operation is normal and the deposition process for the next batch B can be continued according to the conditions of batch A. In fig. 3, points B1, B2, and B3 represent the X-axis offsets of the deposited films on three wafers on the X-axis on lot B. The values of the points b1 and b2 are within the preset threshold value T1. The value at point B3 exceeds the predetermined threshold T1, indicating an abnormality, and the deposition process for the next lot C cannot be continued according to the process conditions for lot B.
The X-axis static process control map and the Y-axis static process control map respectively contain image data of a plurality of deposition processes in the same process chamber. I.e., the wafer image of the wafer 10 with the film layer 50 where the deposition process was performed on a different wafer 10. The deviation trend of the position of the film 50 on the wafer 10 can be determined according to the current data and the previous data. When the data have a tendency to shift in the same direction, even if the data do not exceed the predetermined threshold values T1 and T2, it is possible to indicate that an abnormality occurs. For example, a continuous rise or a continuous fall represents a tendency of "about to" cause an abnormality, and thus the abnormality can be early warned by the tendency.
Referring to fig. 2, in step S20, when the collected data value exceeds the predetermined threshold range, that is, the position offset exceeds the range, the machine control system may automatically determine whether the machine is abnormal (HW) according to the collected data value.
Referring to fig. 2, in step S22, if the equipment is not abnormal, the system can perform batch (run to run) automatic dispatch without stopping the machine. The batch automatic adjusting machine can adjust the process condition of the system from the first condition to the second condition, and then continue the deposition process of the next wafer, so that the crystal edge area has more uniform blank areas. The factors adjusted and corrected by the batch automatic tuning include a program (recipe), a machine parameter (EC), a robot transfer offset (robot offset) to adjust and correct the height (Z-axis) of the susceptor 40, the level of the susceptor 40, the flow field distribution, the plasma distribution, the deviation of the shadow ring 42, and the like. For example, a robot may be calibrated to transfer a wafer into the process chamber 12 at a preferred location.
Referring to fig. 2, in step S24, if the machine is abnormal, the machine is stopped first and then manually adjusted, the process condition of the system is readjusted from the first condition to another second condition, and the deposition process of the next wafer 10 is continued. After the deposition under the second condition is completed, the offset can be converted by the CCD, and the next wafer is fed back by the offset. The second condition can correct or compensate the deviation caused by the first condition, so that the position correction of the deposited film formed subsequently is within the preset threshold value range, namely, the deposited film has better neutrality, and the crystal edge area has uniform blank area.
In the above embodiment, the processor of the machine control system may calculate the offset data of the relative position between the film 50 on the image and the wafer 10, and then compare the offset data with the predetermined threshold. However, in other embodiments, the captured image may be directly compared to a control image (e.g., the wafer image of FIG. 1C) stored in the processor without any film offset.
FIG. 4 is a block diagram illustrating a machine control system. Referring to FIG. 4, the tool control system A1 may control substantially all of the process sequence of the process tools. The machine control system a1 includes at least a processor a2, an image controller A3, and other control modules. The image controller a3 is connected to the external image capturing device 60 to control all actions of the image capturing device 60. The tool control system a1 may include various control modules that control various portions of a process tool (e.g., a process chamber, a robot, a nozzle of an edge bead remover, etc.), i.e., a series of control processes performed on the process tool. Finally, after the processing tool finishes depositing the film 50 on the wafer 10, the wafer 10 with the film 50 deposited thereon is moved to a predetermined position (i.e., a position ready for photographing).
Next, the processor a2 of the tool control system a1 may enable the image controller A3 to transmit a control command to the image capturing device 60 to enable the image capturing device 60 to photograph the wafer 10 deposited with the film 50. The captured wafer image is then transmitted back to the image controller A3, and the processor a2 performs image recognition processing on the image to obtain offset data of the relative position of the film 50 on the wafer image and the wafer 10.
The processor a2 may execute a static recipe generation process based on the data described above, whereby data obtained from the captured images of the plurality of wafers is used to generate a static recipe for output to the outside, such as to a display of the machine control system a1, or for printing by a printing device for an operator.
The invention takes a picture through the image acquisition device and monitors whether the position deviation of the film layer of the crystal edge margin exceeds the tolerance or not through the digitization of the obtained image by the processor. The film layer with the crystal edge left blank can be a deposition film obtained by performing deposition after shielding by a shielding ring before deposition in the above embodiment. However, the invention is not limited thereto, and the film layer with the edge margin may be a deposited film originally covering the entire wafer, and then the partial deposited film in the edge region is removed by the subsequent removal process, so as to leave the edge margin. The deposited film is, for example, a copper layer.
Referring to fig. 5A, for example, a barrier layer 112 is typically formed on a wafer 110 prior to a copper plating process. The barrier layer 112 may be a single layer or a plurality of layers, such as tantalum, titanium, tantalum nitride, titanium nitride, and the like. Next, a seed layer 114 is formed on the barrier layer 112. The material of the seed layer 114 is, for example, copper. Thereafter, a copper plating process is performed to form a copper layer 116 on the seed layer 114.
The plating process not only plates the copper layer 116 on the surface of the wafer 110, but also plates the entire edge (wafer level) WB of the wafer 110, i.e., from the top edge (wafer top edge) TE, top edge (upper level) UB, apex (apex) AX to bottom edge (bottom level) BB of the wafer, and then to the bottom edge (wafer bottom edge) BE of the wafer. However, the barrier layer 112 and the seed layer 114 do not cover the entire edge WB of the wafer 110. A portion of the lower edge BB of the wafer 110 may not be covered by the barrier layer 112 and the seed layer 114. Thus, the copper layer 116 at the lower edge BB is not formed on the barrier layer 112, but directly contacts the wafer 110 at the lower edge BB, and there is undercut (undercutting). Poor adhesion between the copper layer 116 and the wafer 110 often results in film lifting or risk of copper contamination of the tool if the barrier layer 112 is not passed.
Therefore, referring to fig. 5B, after the copper plating process is performed, an Edge Bead Removal (EBR) process is also typically performed. The edge bead process may be performed by transferring the wafer 110 to an edge bead machine in an edge bead chamber. The nozzle 200 of the edge bead remover sprays the etchant 202 from inside to outside to remove the copper layer 116 and the seed layer 114 at the edge WB of the wafer 110, so as to expose the barrier layer 112 at the edge WB of the wafer 110, leaving the copper layer 116a and the seed layer 114 a. If the width of the edge bead is too wide, or if the wafer 110 is offset from the susceptor 204 and the nozzle 200 of the edge bead machine, the entire die will be lost. Therefore, control of the process conditions of the edge washers is very important.
In the present embodiment, after forming the barrier layer 112, the seed layer 114 and the copper layer 116 on the wafer 110, the method of fig. 2 may be employed to perform the subsequent processes.
Referring to fig. 2 and 4, in step S10, process conditions are set. Before performing the edge-washing process, various parameters of the tool 100 (e.g., the edge-washing tool) are set to a first condition. Parameters described herein include, for example, recipe, tool parameters (EC), robot transfer offset to adjust and correct the height (Z-axis) of the platen 204 on which the wafer is placed, platen 204 level, gas flow, process pressure, and temperature. In step S12, according to the set first condition, the robot arm loads the wafer 110 onto the susceptor 204 of the process chamber, and removes the copper layer 116 on the edge WB of the wafer 110 by the edge washing machine.
And after the edge washing process is carried out in the process chamber, taking out the wafer in the process chamber through the mechanical arm. Referring to fig. 2, in step S14, the wafer is photographed by the image capturing device 60 to collect an image (referred to as a wafer image) of the wafer having the film layer (the barrier layer 112, the seed layer 114 and the copper layer 116).
Referring to fig. 2, in step S16, after the image capturing device 60 collects the wafer image with the film layer (barrier layer 112, seed layer 114 and copper layer 116), the captured wafer image is transmitted back to the image controller A3 of the machine control system a1, and the wafer image captured by the image capturing device 60 is subjected to image recognition processing by the processor a2 of the machine control system a1, so as to obtain the data of the relative position between the film layer 50 and the wafer 10 on the wafer image.
Referring to fig. 2, in step S18, the processor a2 may determine whether the position of the film (copper layer 116) on the wafer is shifted according to the obtained data. If the position is not shifted, which indicates normal operation, the film edge cleaning process for the next wafer is continued according to the original first condition, and step S12. If the position is deviated and the abnormality is indicated, the machine control system can automatically judge whether the machine is abnormal according to the collected data value.
Referring to fig. 2, in step 22, if the equipment is not abnormal, the system may perform batch automatic tuning, adjust the process condition of the system from the first condition to the second condition, and then continue the deposition process of the next wafer. The factors adjusted and calibrated by the batch automatic tuning include recipe (recipe), machine parameter (EC), robot transfer offset (robot transfer offset) to adjust and calibrate the height (Z-axis) of the susceptor 204, level of the susceptor 204, gas flow, process pressure, temperature, and the like.
Referring to fig. 2, in step S24, if the machine is abnormal, the manual adjustment is performed to readjust the process condition of the system from the first condition to the second condition to correct or compensate the offset caused by the first condition, and then the edge-cleaning process of the next wafer is continued to correct the offset of the film layer position of the next wafer within the preset threshold range.
The invention can effectively monitor the neutrality of the position of the film layer of the crystal edge margin and the size and the uniformity of the crystal edge margin area by photographing through the image acquisition device and digitizing the obtained image through the processor. If the position of the film layer deviates, whether the machine is abnormal or not can be further judged, if not, the machine can be automatically dispatched in batches, and if so, the machine can be manually dispatched. In addition, the position deviation of the film layer can be corrected in real time by real-time monitoring and real-time machine adjustment, so that the film layer of the next wafer has better neutrality and uniform blank areas.
Claims (10)
1. A method of monitoring a semiconductor process, comprising:
setting the process parameters at a first condition;
performing a first process to form a first film layer on a first wafer, wherein the first film layer does not cover a crystal edge area of the first wafer;
shooting the first wafer with the first film layer by using an image acquisition device to obtain a first wafer image;
performing image recognition on the first wafer image to obtain first data; and
and judging whether the position of the first film layer deviates or not according to the first data.
2. A method of monitoring a semiconductor process as recited in claim 1, wherein the image capture device comprises a camera of a charge coupled device or a complementary gold oxide semiconductor camera.
3. A method of monitoring a semiconductor process as recited in claim 1, wherein the first data includes an X-axis positional offset of the first film layer and a Y-axis positional offset of the first film layer.
4. A method of monitoring a semiconductor process as recited in claim 3, further comprising entering the first data into a static process control map.
5. A method of monitoring a semiconductor process as recited in claim 1, further comprising:
judging whether the position of the first film layer on the first wafer deviates or not according to the first data,
when the first data is within a preset threshold range, maintaining the process parameters at the first condition so as to perform a second process on a second wafer; and
and when the first data exceeds the preset threshold range, performing batch automatic machine adjustment or manual machine adjustment, and setting the process parameters in a second condition to perform a second process on a second wafer.
6. A method for monitoring a semiconductor process as recited in claim 1, wherein the first process includes placing the first wafer in a cvd tool having a shadow ring that shadows the wafer edge for a deposition process.
7. A method of monitoring a semiconductor process as recited in claim 6, wherein the material of the first membrane layer includes silicon carbide, silicon nitride and silicon oxide.
8. A method of monitoring a semiconductor process as recited in claim 1, wherein the first process includes performing an edge bead cleaning process on the first wafer having the deposited film.
9. A method of monitoring a semiconductor process as recited in claim 8, wherein the deposited film includes a copper plated film and a copper seed layer.
10. A method of monitoring a semiconductor process as recited in claim 9, further comprising forming a barrier layer on the first wafer prior to forming the deposited film.
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