CN108847389B - Method for improving first wafer effect in plasma etching process - Google Patents
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- CN108847389B CN108847389B CN201810604582.2A CN201810604582A CN108847389B CN 108847389 B CN108847389 B CN 108847389B CN 201810604582 A CN201810604582 A CN 201810604582A CN 108847389 B CN108847389 B CN 108847389B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Abstract
The invention provides a method for improving the first wafer effect in a plasma etching process, which comprises the steps of collecting data of crystal grains of a previous batch of wafers through an advanced process control system, calculating process parameters of a cleaning process according to the collected data to clean a reaction chamber, comparing the difference between the groove appearance of the first wafer in a later batch of wafers and a target appearance after the later batch of wafers are subjected to plasma etching operation in the reaction chamber, feeding a comparison result back to the advanced process control system, judging whether the process parameters of the cleaning process need to be corrected by the advanced process control system, and if so, correcting the process parameters of the cleaning process by the advanced process control system and cleaning the reaction chamber by adopting the corrected process parameters. The invention can improve the first effect of the wafers in the subsequent batches.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for improving a first chip effect in a plasma etching process.
Background
With the continuous reduction of the critical dimension of the integrated circuit, the requirement of the integration level of the microelectronic device is also continuously increased, and an advanced plasma etching process is introduced for the manufacturing process of the wafer. During the introduced plasma etching process, the reactive gas is dissociated under the excitation of the radio frequency current to generate active plasma, and the active plasma reacts with the wafer to generate granular polymers, which form residues in the reaction chamber and are continuously accumulated in the reaction chamber. These residues cannot be removed by conventional post-cleaning processes, resulting in large particle counts and high defect rates, which affect product quality. To reduce this effect, different batches of wafers are cleaned before etching by using a cleaning process to remove residues in the reaction chamber, such as: wafer-less Auto Clean (WAC), i.e. using fluorine-containing gas nitrogen trifluoride (NF)3) Removing inorganic polymer by using oxygen (O)2) The organic polymer is removed.
Generally, in order to ensure that a subsequent batch of wafers does not have defects, the conventional cleaning process cleans the reaction chamber for a fixed cleaning time, but mostly results in excessive cleaning, so that the reaction chamber is too clean, and when a subsequent batch of products is subjected to groove etching, due to excessive cleaning of the reaction chamber, the angle of the shape of the groove after the groove etching of a first wafer of a subsequent batch of wafers is large, so that a defect is generated in the subsequent filling process, which is simply referred to as a first wafer effect.
Disclosure of Invention
An objective of the present invention is to provide a method for improving the first wafer effect in a plasma etching process, so as to improve the defect generated after the first wafer of the subsequent batch of wafers is subjected to the plasma etching process, i.e., improve the first wafer effect of the subsequent batch of wafers.
In order to achieve the above object, the present invention provides a method for improving the first-wafer effect in a plasma etching process, comprising: step S1: carrying out plasma etching operation on the previous batch of wafers in a reaction chamber of a plasma etching machine; step S2: the advanced process control system collects data of the crystal grain quantity of the previous batch of wafers and calculates the process parameters of the cleaning process according to the collected data; step S3: cleaning the reaction chamber according to the calculated process parameters; step S4: carrying out plasma etching operation on the wafers of the next batch in the reaction chamber; step S5: comparing the difference between the groove morphology of the first wafer in the batch of wafers and the target morphology, and feeding back the comparison result to the advanced process control system; step S6: according to the feedback result, the advanced process control system judges whether the technological parameters of the cleaning process of the reaction chamber need to be corrected or not; if so, the apc system modifies the process parameters of the cleaning process for the reaction chamber and performs step S7; if not, go to step S8; step S7: cleaning the reaction chamber by adopting the corrected process parameters; step S8: the reaction chamber is cleaned along with the process parameters in step S3.
Optionally, in step S6, when the angle of the trench profile of the first wafer of the next batch of wafers is greater than the angle of the target profile and is greater than or equal to 0.5 degrees, the apc system corrects the process parameters of the cleaning process for the reaction chamber; when the angle of the groove morphology of the first wafer of the later batch of wafers is smaller than the angle of the target morphology and less than 0.5 degree, the advanced process control system does not need to correct the process parameters of the cleaning process of the reaction chamber.
Optionally, the process parameter of the cleaning process of the reaction chamber is process time, the gas used in cleaning the reaction chamber is oxygen, the flow of the oxygen is 300-500 sccm, the pressure of the reaction chamber is 40-70 mtorr, and the temperature of the reaction chamber is 50-75 ℃.
Optionally, in a case that the flow rate of the gas used in the cleaning process, the pressure and the temperature of the reaction chamber are fixed, the following relation is satisfied between the process time of the cleaning process and the number of the dies of the previous batch of wafers: y 14.377x + 204.73;
wherein x is the crystal grain number of the previous batch of wafers; and y is the process time of the cleaning process.
Optionally, each die in the front lot of wafers has the same size, each die in the back lot of wafers has the same size as each die in the front lot of wafers, and the number of dies in the back lot of wafers is the same as the number of dies in the front lot of wafers.
Compared with the prior art, the invention has the advantages and beneficial effects that:
the invention provides a method for improving the first wafer effect in a plasma etching process, which comprises the steps of collecting data of crystal grains of a previous batch of wafers subjected to etching operation in a reaction chamber of a plasma etching machine by an advanced process control system, calculating process parameters of a cleaning process according to the collected data, cleaning the reaction chamber according to the calculated process parameters, performing plasma etching operation on a later batch of wafers in the reaction chamber, comparing the difference between the appearance of a groove of the first wafer in the later batch of wafers and a target appearance, feeding a comparison result back to the advanced process control system, judging whether the process parameters of the cleaning process of the reaction chamber need to be corrected or not by the advanced process control system according to a feedback structure, correcting the process parameters when the process parameters need to be corrected and cleaning the reaction chamber by adopting the corrected process parameters, the method can improve the defect of the first wafer in the subsequent batch of wafers after the plasma etching process, namely improve the first effect of the subsequent batch of wafers.
Drawings
FIG. 1 is a flow chart of a cleaning process APC system according to an embodiment of the present invention;
FIG. 2 is a graph of the cleaning process time required to maintain a target trench profile versus the number of grains in an embodiment of the present invention;
FIG. 3a is a trend graph of the etched trench profile and the target profile of the first wafer in the original cleaning method in the embodiment of the present invention;
FIG. 3b is a graph illustrating a trend of a profile of an etched trench versus a target profile for a first wafer during a cleaning process using an APC system in accordance with an embodiment of the present invention.
Detailed Description
As the process window for wafer processing becomes smaller and smaller, more stringent process control requirements are placed on integrated circuit device and inspection equipment manufacturers. Previous statistical process control and control methods for a parameter alone have not been able to accommodate current process technology requirements. In order to improve the production efficiency of equipment, the process production line has extensibility and flexibility, the product quality and continuity are improved, and advanced process control is increasingly focused and researched by people.
As is known in the background art, the polymer sources in the reaction chamber are: during plasma etching of a wafer, a microstructure containing a low-k dielectric material needs to be cleaned, and carbon dioxide (CO) is generally used2) Or oxygen (O)2) As reactive gases, however CO2One side effect of photoresist stripping is a carbon rich product, i.e., a polymer. In addition, in the WAC process, O is introduced by a plasma source2Or NF3And the gas which does not produce residual polymer and has strong chemical activity is used as cleaning gas for cleaning the reaction chamber of the plasma etching machine.
The inventors have also found that, during the plasma etching process of the first wafer after the cleaning process of the reaction chamber, when a proper amount of the granular polymer drops on the grooves, the angle of the groove profile of the first wafer can be relaxed, so that the first wafer can be as close to the target profile as possible. When excessive granular polymer falls on a groove circuit, the appearance of the groove of the first wafer is blurred, so that the appearance of the groove is far away from a target appearance, and the reason for the situation is that the cleaning process is insufficient, and the residue in the reaction chamber is still much, so that the first wafer has defects, and the yield of products is influenced. When a small amount of or no particle polymer falls on a groove circuit, the angle of the appearance of the groove of the first wafer of the subsequent batch of wafers is large, so that the appearance of the groove is far away from the target appearance.
Based on the research, the invention establishes the relationship between the crystal grain quantity of the wafers in each batch and the process parameters of the cleaning process of the reaction chamber through a method for improving the first wafer effect in the plasma etching process, and records and feeds back the crystal grain quantity of the wafers in the previous batch of etching process by using an advanced process control system so as to adjust the process parameters related to the cleaning process, thereby improving the first wafer effect of the subsequent batch.
The method for improving the first-wafer effect in the plasma etching process according to the present invention is further described in detail with reference to the accompanying drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
FIG. 1 is a flow chart of a cleaning process APC system according to the present embodiment. As shown, the present invention provides a method for improving the first-wafer effect in a plasma etching process, the method comprising the steps of:
step S1: the previous batch of wafers are subjected to plasma etching operation in a reaction chamber of a plasma etching machine, wherein the previous batch of wafers have the same size and each crystal grain has the same size. And each wafer in the previous batch of wafers is subjected to a plasma etching process in the same process environment of the same reaction chamber. The number of the previous batch of wafers can be one or more.
Step S2: and the advanced process control system collects the data of the crystal grain quantity of the previous batch of wafers and calculates the process parameters of the cleaning process according to the collected data. The gas used for cleaning the reaction chamber is, for example, oxygen, and the process parameters of the cleaning process include a flow rate of the gas used for the cleaning process (for example, a flow rate of oxygen), a pressure and a temperature of the reaction chamber, and a process time, wherein the flow rate of oxygen is, for example, 300 to 500sccm, the pressure of the reaction chamber is, for example, 40 to 70 mtorr, and the temperature of the reaction chamber is, for example, 50 to 75 ℃. In this embodiment, the process parameter of the cleaning process of the reaction chamber that needs to be calculated is a process time, that is, the process time is adjusted and changed under the condition that the process parameters such as the flow rate of oxygen, the pressure and the temperature of the reaction chamber are not changed, that is, under the condition that the process parameters of the cleaning process other than the process time are not changed. As can be seen from the above, the APC system performs data collection in this step.
FIG. 2 is a graph illustrating the relationship between the cleaning process time required to maintain the target trench profile and the number of grains in accordance with the present embodiment. As shown in fig. 2, in the case that the flow rate of the gas used in the cleaning process, the pressure and the temperature of the reaction chamber are fixed, the following relationship is satisfied between the process time of the cleaning process and the number of the dies of the previous batch of wafers:
y＝14.377x+204.73；
wherein x is the crystal grain number of the previous batch of wafers; and y is the required process time in the cleaning process.
Meanwhile, through a large number of experiments, the correlation between the relational expression and actual test data is shown as follows: r20.9042, it can be seen that the cleaning time calculated by this relationship has a small difference from the actual required process time.
Note that this relationship is only established when the flow rate of the gas used in the cleaning process, the pressure and the temperature of the reaction chamber are fixed.
Referring to fig. 2, the process time required for the cleaning process of the reaction chamber may be divided into three intervals, where the number of the die of the previous wafer is more than or equal to 4000 and less than 12000, and there is a strong linear relationship between the process time of the cleaning process and the number of the die under the condition that the process parameters of the cleaning process except the process time are not changed, and the process time of the cleaning process is longer as the number of the die is larger.
When the number of the crystal grains of the previous batch of wafers is less than 4000, and under the condition that the process parameters of other cleaning processes except the process time are not changed, the process time of the cleaning process is relatively fixed. When the number of dies is in the area, the number of dies per batch of wafers is preferably not less than 4000 because the residue in the reaction chamber is less and the process time of the cleaning process of the reaction chamber is fixed, which affects the production efficiency of the wafers.
When the number of the crystal grains of the wafer in the previous batch is more than or equal to 12000 and less than 16000, the process time is relatively fixed under the condition that the process parameters of other cleaning processes except the process time are not changed. When the number of dies is in the area, the residual material in the reaction chamber is always in a saturated state due to the large amount of residual material in the reaction chamber, and the excessive residual material causes poor etching and poor filling of the wafers in the subsequent batch, thereby affecting the yield of the wafers, so the number of dies in each batch of wafers is preferably not more than 12000. Therefore, the number of dies per wafer batch is preferably 4000 or more and less than 12000.
From the above, the apc system calculates the process time of the cleaning process required for the reaction chamber by using the collected number of dies of the previous lot of job wafers through a relational expression.
Although the cleaning process of the reaction chamber is improved by adjusting the process time when the process parameters of the cleaning process other than the process time are not changed, the cleaning process may be improved by adjusting the flow rate of the gas used in the cleaning process when the process parameters of the cleaning process other than the flow rate of the gas used in the cleaning process are not changed, or the cleaning process may be improved by adjusting the process time and the pressure of the cleaning process when the flow rate of the gas used in the cleaning process and the temperature of the reaction chamber are not changed, or the cleaning process may be improved by adjusting the flow rate of the gas used in the cleaning process and the pressure of the reaction chamber when the process time and the temperature of the cleaning process are not changed. Of course, there are other ways, which are not described in detail herein.
Step S3: and cleaning the reaction chamber according to the calculated process parameters. The reaction chamber is cleaned based on the calculated process parameter, such as process time. During the cleaning process, the residue in the reaction chamber is properly removed, so that the groove morphology of the first wafer in the subsequent batch of wafers is as close as possible to the target morphology.
Step S4: and carrying out plasma etching operation on the wafers of the next batch in the reaction chamber. Specifically, after the cleaning process of the reaction chamber is finished, an etching process is performed on a subsequent wafer, where the subsequent wafer is the same as a previous wafer, that is, the size of each die in the subsequent wafer is the same as the size of each die in the previous wafer, and the number of the die in the subsequent wafer is the same as the number of the die in the previous wafer.
Step S5: and comparing the difference between the groove morphology of the first wafer in the batch of wafers and the target morphology, and feeding back the comparison result to the advanced process control system. Specifically, after the etching process of the wafer in the next batch is finished, or in the etching process of the wafer in the next batch, the advanced process control system compares the groove morphology of the first wafer in the next batch with the target morphology, and feeds back the comparison result to the advanced process control system. When the angle of the groove morphology of the first wafer in the later-batch wafer is larger than the angle of the target morphology and is greater than or equal to 0.5 degrees, the deviation between the groove morphology of the first wafer in the later-batch wafer and the target morphology is larger, and when the angle of the groove morphology of the first wafer in the later-batch wafer is smaller than the angle of the target morphology and is smaller than 0.5 degrees, the deviation between the groove morphology of the first wafer in the later-batch wafer and the target morphology is smaller. As can be seen from the above, the apc system performs data feedback in this step.
Step S6: according to the feedback result, the advanced process control system judges whether the technological parameters of the cleaning process of the reaction chamber need to be corrected or not; if so, the apc system modifies the process parameters of the cleaning process for the reaction chamber and performs step S7; if not, step S8 is executed. Specifically, the advanced process control system performs data analysis on the difference between the groove profile of the first wafer in the next batch of wafers and the target profile according to the received feedback, and determines whether the process parameter (for example, the process time) of the cleaning process of the reaction chamber needs to be corrected, that is, when the angle of the groove profile of the first wafer in the next batch of wafers is larger than the angle of the target profile and is greater than or equal to 0.5 degrees, the advanced process control system corrects the process parameter (for example, the process time) of the cleaning process of the reaction chamber; when the angle of the trench profile of the first wafer in the subsequent batch of wafers is smaller than the angle of the target profile and less than 0.5 degrees, the apc system does not need to correct the process parameters (e.g., the process time) of the cleaning process for the reaction chamber.
In this embodiment, the process parameter of the cleaning process of the reaction chamber is a process time, and when the angle of the groove profile of the first wafer of the next batch is larger, it indicates that the process parameter of the cleaning process of the reaction chamber is, for example, longer or shorter, a new set of process times, that is, the process time needs to be corrected, is calculated according to the larger angle of the groove profile, and step S7 is executed; when the difference between the angle of the groove profile of the first wafer in the next wafer batch and the target profile is smaller, it indicates that the process time in the cleaning process is appropriate, and it is not necessary to calculate new process time, that is, the process time required for the cleaning process of the subsequent reaction chamber is the same as the process time of the previous cleaning process, and it is not necessary to correct the process time, then step S8 is executed.
Step S7: and cleaning the reaction chamber by adopting the corrected process parameters.
Step S8: the reaction chamber is cleaned along with the process parameters in step S3.
Fig. 3a is a trend graph of the etched trench profile and the target profile of the first wafer in the original cleaning method of this embodiment. As shown in fig. 3a, in the cleaning method used in the prior art, that is, under the condition that the process parameters of the cleaning processes except the process time are not changed, the process time required by the cleaning processes is also fixed, the difference between the trench profile of the first wafer in each batch and the target profile is large, the angle of the trench profile is large, and the difference between the trench profile of the wafers except the first wafer in each batch and the target profile is small. It can be seen that, when the reaction chamber is subjected to the cleaning process, the cleaning process is performed excessively, which causes the subsequent filling process to be poor, and affects the quality of the product.
FIG. 3b is a trend graph of the profile of the etched trench and the target profile of the first wafer in the cleaning method using the APC system according to the embodiment. As shown in fig. 3b, by adjusting the process parameters of the cleaning process of the reaction chamber by the method for improving the first wafer effect in the plasma etching process of the embodiment, the difference between the groove morphology and the target morphology of the first wafer in each batch of wafers is small, the method improves the defects generated after the plasma etching process of the first wafer in the later batch of wafers, and improves the quality of the wafers.
In the embodiment, the advanced process control system is used for collecting the crystal grain number of the previous batch of wafers and feeding the crystal grain number back to the advanced process control system, under the condition that the process parameters of other cleaning processes except the process time are not changed, the advanced process control system calculates the process time required by the cleaning process of the reaction chamber through a relational expression and cleans the reaction chamber, the next batch of wafers are subjected to plasma etching operation in the reaction chamber, the advanced process control system compares the groove appearance of the first wafer in the next batch of wafers with the target appearance, when the deviation of the comparison result is larger, the advanced process control system judges whether the process parameters of the cleaning process of the reaction chamber need to be corrected or not, if the process parameters need to be corrected, the advanced process control system corrects the process parameters of the cleaning process of the reaction chamber and cleans the reaction chamber by adopting the corrected process parameters, if no modification is required, the reaction chamber is cleaned along with the previous process parameters. Compared with the prior art, the method has the advantages that the advanced process control system is used for collecting, feeding back, analyzing and correcting the process parameters related to the cleaning process, so that the defects of the first wafer in the subsequent batches of wafers after the plasma etching process are improved, namely the first effect of the subsequent batches of wafers is improved.
In summary, the method for improving the first wafer effect in the plasma etching process of the invention can improve the defects of the first wafer in the subsequent batch of wafers after the plasma etching process.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A method for improving the first wafer effect in a plasma etching process is characterized by comprising the following steps:
step S1: carrying out plasma etching operation on the previous batch of wafers in a reaction chamber of a plasma etching machine;
step S2: the advanced process control system collects data of the crystal grain quantity of the previous batch of wafers and calculates the process parameters of the cleaning process according to the collected data;
step S3: cleaning the reaction chamber according to the calculated process parameters;
step S4: carrying out plasma etching operation on the wafers of the next batch in the reaction chamber;
step S5: comparing the difference between the groove morphology of the first wafer in the batch of wafers and the target morphology, and feeding back the comparison result to the advanced process control system;
step S6: according to the feedback result, the advanced process control system judges whether the technological parameters of the cleaning process of the reaction chamber need to be corrected or not; if so, the apc system modifies the process parameters of the cleaning process for the reaction chamber and performs step S7; if not, go to step S8;
step S7: cleaning the reaction chamber by adopting the corrected process parameters;
step S8: the reaction chamber is cleaned along with the process parameters in step S3.
2. The method of claim 1, wherein in step S6, when the angle of the trench profile of the first wafer in the subsequent batch of wafers is greater than the angle of the target profile by 0.5 degrees or more, the apc system corrects the process parameters of the cleaning process for the reaction chamber; and when the angle of the groove morphology of the first wafer in the later batch of wafers is smaller than the angle of the target morphology and is smaller than 0.5 degree, the advanced process control system does not need to correct the process parameters of the cleaning process of the reaction chamber.
3. The method of claim 1, wherein the process parameter of the chamber cleaning process is a process time.
4. The method of claim 1, wherein the gas used to clean the reaction chamber is oxygen.
5. The method of claim 4, wherein the flow rate of the oxygen gas is 300-500 sccm.
6. The method of claim 1, wherein the pressure in the reaction chamber is between 40 mtorr and 70 mtorr.
7. The method of claim 1, wherein the temperature of the reaction chamber is 50-75 ℃.
8. The method of claim 1, wherein the process time of the cleaning process and the number of dies of the previous batch of wafers satisfy the following relationship with a fixed flow rate of gas used in the cleaning process, pressure and temperature of the reaction chamber:
y＝14.377x+204.73；
wherein x is the crystal grain number of the previous batch of wafers; y is the process time of the cleaning process, and the process time unit is as follows: and second.
9. The method of improving the first-wafer effect in a plasma etch process of claim 1, wherein each die in the previous batch of wafers is the same size.
10. The method of claim 9, wherein each die in the subsequent wafer has a same size as each die in the previous wafer, and wherein the number of dies in the subsequent wafer is the same as the number of dies in the previous wafer.
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| CN111613526B (en) * | 2020-06-04 | 2021-05-11 | 无锡亚电智能装备有限公司 | Cleaning method based on wafer optimized arrangement |
| CN113823545A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Device and method for improving process deviation of multi-chamber equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6374832B2 (en) * | 1999-03-01 | 2002-04-23 | United Microelectronics Corp. | Waferless seasoning process |
| CN1743504A (en) * | 2004-09-02 | 2006-03-08 | 上海宏力半导体制造有限公司 | Method for improving reaction room performance |
| KR100688735B1 (en) * | 2005-12-28 | 2007-03-02 | 동부일렉트로닉스 주식회사 | Method for cleaning of a plasma etching chamber |
| CN101158848A (en) * | 2006-10-08 | 2008-04-09 | 上海宏力半导体制造有限公司 | Control method of intelligent detecting convert reaction chamber mode |
| CN101562122A (en) * | 2008-04-16 | 2009-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry etching method and silicon wafer etching method |
| CN105185691A (en) * | 2014-06-18 | 2015-12-23 | 上海华力微电子有限公司 | Method for eliminating first sheet effect |
| CN108054115A (en) * | 2017-11-14 | 2018-05-18 | 上海华力微电子有限公司 | The polymeric cleaners method of etching cavity |
-
2018
- 2018-06-13 CN CN201810604582.2A patent/CN108847389B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6374832B2 (en) * | 1999-03-01 | 2002-04-23 | United Microelectronics Corp. | Waferless seasoning process |
| CN1743504A (en) * | 2004-09-02 | 2006-03-08 | 上海宏力半导体制造有限公司 | Method for improving reaction room performance |
| KR100688735B1 (en) * | 2005-12-28 | 2007-03-02 | 동부일렉트로닉스 주식회사 | Method for cleaning of a plasma etching chamber |
| CN101158848A (en) * | 2006-10-08 | 2008-04-09 | 上海宏力半导体制造有限公司 | Control method of intelligent detecting convert reaction chamber mode |
| CN101562122A (en) * | 2008-04-16 | 2009-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry etching method and silicon wafer etching method |
| CN105185691A (en) * | 2014-06-18 | 2015-12-23 | 上海华力微电子有限公司 | Method for eliminating first sheet effect |
| CN108054115A (en) * | 2017-11-14 | 2018-05-18 | 上海华力微电子有限公司 | The polymeric cleaners method of etching cavity |
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| CN108847389A (en) | 2018-11-20 |
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