TW533476B - Manufacturing method of alternating phase shift mask - Google Patents

Abstract

A manufacturing method of alternating phase shift mask comprises the following steps: providing a substrate having a light-pervious layer formed thereon a conductive layer provided thereon a light-shielding layer; forming a first and a second trenches on the light-shielding layer to expose the conductive layer; depositing a first photoresist layer; performing an electron beam exposure and development on the first photoresist layer and using the first photoresist layer as a mask to etch the conductive layer exposed by the first trench to expose the light-pervious layer; removing the first photoresist layer and depositing a second photoresist layer; using the conductive layer as a mask to carry out exposure and development on the second photoresist layer from the side of the light-pervious layer; using the second photoresist layer as a mask to etch the light-pervious layer and removing the second photoresist layer; and removing the conductive layer exposed by the second trench to expose the light-pervious layer.

Description

533476

Ph The H series is about a manufacturing method of an alternating phase shift mask (Ultei ^ ung Phase Shlft Mask), and particularly about a method of using surface ultraviolet exposure and conductive phase shift layer I, system, raw material, soil ^, sand gift (The Ik method of the dual-slot parent-type phase-shift mask can reduce misaUgnment. Manufacturing = to U figure shows a traditional dual-slot alternate-phase-shift mask system. First 'Shikou Section 1A As shown in the figure, a substrate is provided, which has a light-transmitting quartz layer 11, a light-shielding chrome layer 12, and a photoresist layer 13. The photoresist layer 13 is subjected to an E-beam according to a pattern. Exposure. Then, the photoresist layer 13 is developed 'as shown in the figure', so that the exposed parts are removed to form exposed chromium layers 12 141 and 142 in the photoresist layer 13. Then, as shown in FIG. 1C No, the chrome layer 12 is etched with the photoresist layer 丨 3 as a mask to expose the underlying quartz layer 11. Furthermore, as shown in Fig. 1D, the photoresist layer 丨 3 is removed. Next, As shown in FIG. 1E, a photoresist layer 15 is further deposited so that the photoresist layer 15 above the alignment groove 141 is exposed. At this time, the photoresist layer 15 The existence of the lack of conductive layer, so the laser beam is used to expose the photoresist layer 5. Then, as shown in Figure 1F, the photoresist layer 15 is developed > The exposed photoresist layer 15 ′ is removed and The photoresist layer 15 is a mask to perform a second etching on the quartz layer. Then, the photoresist layer 15 is removed 'as shown in Fig. 1G'. The steps from Figs. 1 to 16 can be repeated three times to etch the quartz one by one. Layer 丨 丨 to obtain a more accurate phase shift.

533476 V. Description of the invention (2) The groove 141 is shown again, and the photoresist layer 16 is deposited again, so that the concave photoresist layer 16 is aligned and exposed. The resist layer 16 is exposed. At this time, the laser beam is also used to develop the second and sixth photoresist layers: the photoresist layer 16 is removed and removed three times. The photoresist layer 16 is used as a mask to perform the final quartz layer η. As shown in FIG. Photoresist layer 16.

The steps in the figure can be repeated four times, and the etching is shifted from the 1EfG phase. I tried U to get a more accurate answer. Because of the two types of exposure equipment used in the above-mentioned traditional dual-groove alternating phase method (the difficulty of the production of the displacement mask of the electron beam mask). _ 加 又 槽 父Alternative phase shift: The present invention provides a double-groove alternating phase (electron walking =, which can reduce the exposure step and only use-a kind of exposure and electron beam) to reduce the alignment error. Η: One purpose is to provide An alternate multi-fabrication method includes the following steps. A substrate is provided, and the substrate has a permeable i-layer, a conductive layer on the light-transmitting layer, and a light layer. A first and a light-shielding layer are formed on the light-shielding layer. The second concave rod, the conductive layer is exposed. A first photoresist layer is deposited. The first one is:: = exposes and develops the electron beam, and exposes the light-transmitting layer with the first photoresist layer. Remove the first-resistance first barrier layer. From the side of the light-transmitting layer and using the conductive layer as a mask 0503-6415TWF (N)-TSMC2001-0169; Vincent.ptd Page 5 533476 5. Description of the invention (3) exposing and developing the second photoresist layer, and etching the light transmitting layer with the second photoresist layer The second photoresist layer is removed. The exposed conductive layer exposes the light-transmitting layer. The present invention uses a photomask substrate with a conductive phase shift layer to perform a double-groove parent = type. The production of phase shift masks uses its conductive properties and the mask during back exposure, so that the exposure step can be performed using only electro-luminescence equipment, and the back exposure has sub-steps to reduce alignment errors. $ € Example Figure 2Q shows the manufacturing method of the alternate-phase dual-groove phase in the present example. "First": = So *, provide a substrate 'including-translucent stone central layer 21, ~ V electrical phase shift layer 27 (For example, the chromium layer 22 and a photoresist layer 23 of Mos. ^ Rou Jiu u ΐ ΐ！:! 26 as shown in the figure 'exposing and displaying the photoresist layer 23 with an electron beam to form the exposed chromium layer 22 The grooves 241 and 242. ', —then, as shown in FIG. 2C', the photoresist layer 23 is used as a mask to the chromium layer. Further, the exposed chromium layer 22 is removed to expose the conductive underneath. The phase shift layer f ′ is as shown in FIG. 2D, and the photoresist layer 23 is removed. Next, as shown in FIG. Xiandan, two or two resist layer 25 and exposed using the electronic groove 241. ,, and shirts so as to be formed separately from the chromium layer 22, and then, as shown in the second ", the μ resist layer 25 is a mask to the cover (iv)

533476

The exposed light-conducting phase-shifting layer 27 underneath the light-transmitting layer 241 is exposed to dry-etch the layer 2 1. 'Removing the photoresist layer 25. ’Another photoresist layer 2 6 is deposited, and the light guide phase is used to guide the light phase of your child 9 7 4T, and the purple side is used to guide the light guide phase of your child ’s light 9 7 4 and rit Τ Μ

r is not used to develop the photoresist layer 26 and dry-etch the quartz layer 21 exposed by the photoresist. Furthermore, as shown in FIG. 2G, the photoresist is removed and then, as shown in FIG. 2 (a), an outer line is deposited from one side of the quartz layer 21 to conduct a back exposure for the light guide phase 26. Then, As shown in FIG. 2I, the photoresist layer 2 and the layer 26 are used as a mask to expose the quartz layer 21 exposed to the groove 241. Furthermore, as shown in FIG. 2J, the photoresist layer 26 is removed. The steps in Figures 2h to 2J can be repeated three times to sequentially etch the quartz layer in the groove 241 to obtain a more accurate phase shift. Then, as shown in FIG. 2K, a photoresist layer 28 is deposited. Then, as shown in FIG. 2L, the photoresist layer 28 is “etched back” to remove the photoresist layer 28 above the conductive phase shift layer 27, leaving only the light filling the groove 2 4 1 Resist layer 2 8. Further, as shown in FIG. 2M, the conductive phase shift layer 27 in the groove 242 is dry-etched with the chromium layer 22 and the photoresist layer 28 as masks, and removed. Then, as shown in FIG. 2N, the photoresist spread 28 filling the groove 1 41 is removed. · Θ Then, as shown in FIG. 20, a photoresist layer 29 is deposited, and ultraviolet light is used to expose the photoresist layer 29 from the side of the quartz layer 21 with the conductive phase shift layer 27 as a mask. , So that the photoresist layer 29 of the alignment grooves 241 and 242 is exposed.

0503-6415TWF (N); TSMC2001-0169; Vincent.ptd Page 7 533476 V. Description of the invention (5) Furthermore, 'as shown in f 2P', the photoresist layer 29 is used as a mask to the grooves 241, 242. The exposed quartz layer 21 is dry-etched. Lihou ’, as in the second Q picture, the family has thousands of pounds, and the dream team has 1 m of ox sirloin, and the pounds remove the photoresist layer 29. Among them, the steps of Figures 20 to 2 Q can be repeated four times to say a .91 3, „', ... said that the quartz layer 21 in the grooves 241 and 242 is etched gradually, in order to obtain a more accurate The phase shift is as follows: The present invention uses a mask substrate (blank), so that when the 4 private layer (MoSiO) is also π α accounted for φ1, it is also used to etch the quartz layer once. The use of electron beam exposure eliminates the "exposure of women and men." In addition to the difference in alignment between different exposure equipment, it is also dry, and the conductive phase shift layer is used as a mask for UV exposure. The method has the effect of automatic alignment and further reduces the alignment error. The progress has been reduced. However, the present invention has been disclosed as above with a preferred embodiment, but it is to limit the present invention. Anyone skilled in this technique can use God and the range β '. The scope of protection shall be determined by the scope of the attached patent application. x

533476

Hereinafter, an embodiment of a crossover method according to the present invention will be described with reference to the drawings: Schematic diagram of phase shift reticle. Brief description of the manufacture of the shift reticle. Figures 1A to 1J show a conventional dual-groove alternating phase fabrication method; Figures 2A to 2Q show the manufacturing method of the dual trench alternate phase in this embodiment. Second special cover [Symbol description] 11, 2 Bu quartz layer; 12, 22 ~ chrome layer; 13, 15, 16, 23, 25, 26, 28, 29 ~ photoresist layer; 141, 142, 241, 242 ~ concave Slot; 2 7 ~ conductive phase shift layer.

Claims (1)

533476 / 'Application for patent scope 1 · An alternating step: providing a substrate with a conductive layer, and exposing the conductive layer of the light-shielding layer; depositing a first pair of first light beams and the layer being a masking layer; Phase ': a photoresist layer formed on the base and a conductive layer, and the manufacturing method of the first light-transmitting army includes the following steps:?: Translucent |, which has a light-shielding layer on the translucent layer; First and second grooves, which expose and develop the order electron beam, and expose the light transmission and deposit a second photoresist layer with the conductive layer of the first concave center exposure path; The layer is a mask for the second photoresist layer. The first photoresist layer is removed from one side of the light-transmitting layer, and the light is developed. 苐 The photoresist layer is a mask. # 虫 刻 The light-transmitting layer and removing the second The light and the two grooves benefit the light-transmitting layer of the base resist layer and the photoresist layer benefit the conductive layer of the third exposure path to expose the light-transmitting layer. The alternate phase shift mask described in item 1 further has a third photoresist layer, and the method further includes exposure and development 'and forming the first and second grooves with the third photoresist layer; And 0, the photoresist layer of the alternating phase shift mask described in item 2 is exposed using an electron beam. In addition to the application of the first law, the steps are as follows: The third light is engraved to cover the third application of the law, of which -6415TWF (N); TSMC2001 0169; Vincent.ptd Page 10 533476 6. Apply for a patent The scope of manufacture is 4 parties; as described in the first item of Shen Jiu Yiyuan Garden, and the external type is as follows: The use of photoresistance thickness gauges and line exposure. Manufacture ^ Deposition of the alternating phase shift mask described in the first core-the fourth step is as follows: perform the guiding ... mask the fourth resist layer and the fourth photoresist layer A resist layer.蚀刻 The mask is used to etch the light-transmitting layer and remove the fourth light. 6 · Alternative phase shift light manufacturing method as described in item 5 of the declared patent scope. The second photoresist layer is exposed using ultraviolet light. 7. The method of manufacturing the alternating phase shift light I as described in item 1 of the scope of the patent application, wherein the light-transmitting layer is a quartz layer. 8 · The alternating phase shift light manufacturing method described in item 1 of the scope of patent application ', wherein the light shielding layer is a final layer. 9 · The method of manufacturing an alternating phase shift mask as described in item 1 of the scope of the patent application, wherein the conductive layer is a 〆SiO2 layer. Of 0503-6415TWF (N); TSMC2001-0169; Vincent.ptd page 11