A7A7
531907 五、發明説明（） 發明領域： 本發明係有關於氮化物發光二極俨，姓 特別是有關於具 有上II下p形式之氮化物發光二極體。 發明背景： 發光二極體目前被廣泛應用在日常生活中，例如電子 看板、指示燈和感應器等方面。第丨圖所繪示為習知皿族 氣化物發光二極體之結構剖面圖。請參照第1圖，一般瓜 族氮化物發光二極體為上P下η的形式，亦即由活性層18 來區隔’上方為ρ型結構下方為η型結構。而瓜族氮化物 發光二極體的製造方法如下··在例如材質為藍寶石 (sapphire)的基板1〇上依序形成低溫的緩衝層（buffer layer)12、材質例如為亂化嫁（GaN)的η型歐姆接觸層14、 材質例如為氮化鋁鎵（AUGa^xN)的寬能隙之η型侷限層 16、活性層18、材質為例如氮化鋁鎵（Αιχ〇αι·χΝ)的寬能隙 之P型的侷限層20、以及材質為例如氮化鎵（GaN)的ρ型 歐姆接觸層2 2，其中，上述之活性層1 8可為窄能隙的氮 化銦鎵（InxGa^N)之單層結構、或氮化銦鎵/氮化鎵 (IruGa^N/GaN)的η個週期多重量子井結構（η》1)，即完成 m族氮化物發光二極體的磊晶結構。接著，在磊晶結構上 鍍上導電電極24與導電電極26即完成發光二極體的製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) •........................、可......... (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531907 A7 -- __ 五、發明説明（） 作。此處所提及的導電電極24係為適合與p型半導體形成 良好歐姆接觸的金屬，例如鎳金合金（Ni/Au);而導電電極 26則為適合與n型半導體形成良好歐姆接觸的金屬，例如 鈦鋁合金（Ti/Al)。 習知瓜族氮化物發光二極體中包括兩個不同電性的導 電電極：p型的導電電極24、以及n型的導電電極26。所 以在習知瓜族氮化物發光二極體的製作過程中，必須經過 兩次的蒸鍍步驟才能完成金屬電極的製作。另外，習知瓜 族氮化物發光二極體的最上層結構中，大都為ρ型氮化 物，例如ρ型歐姆接觸層22，由於ρ·型氮化物往往比η型 氱化物的摻雜濃度低’並無法提供有效電流分散作用。再 者，習知m族氮化物發光二極體的結構中，由於ρ型I化 物暴路外界中’所以在經清洗或是姓刻的步驟時，往往會 使得外在的氫離子鑽入P型氮化物，使得P型氮化物的有 效載子濃度降低’影響到元件的發光特性。由於上述缺點 會導致Π族氮化物發光二極體的發光效率不佳，因此如何 有效地進一步提昇ΠΙ族氮化物發光二極體的發光效率，仍 是大家期盼的努力目標。 ......................、可......... (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 體 極 二 光 發 物 化 氮 族 知 習 3 中 景 背 明 : 發 述 之 概 述 及 上 的 於 目 鑒 明 發 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) A7531907 5. Description of the invention () Field of the invention: The present invention relates to nitride light-emitting diodes, and the last name is particularly to nitride light-emitting diodes having a p-type and a p-type. BACKGROUND OF THE INVENTION: Light-emitting diodes are currently widely used in daily life, such as electronic signage, indicator lights, and sensors. Figure 丨 shows a cross-sectional view of the structure of a conventional gaseous light-emitting diode of the conventional dish family. Please refer to Fig. 1. Generally, a guar nitride nitride light-emitting diode is in the form of upper P and lower η, that is, the active layer 18 is used to distinguish the upper surface of the pn-type structure and the n-type structure. The manufacturing method of the melons nitride light-emitting diode is as follows: · A low-temperature buffer layer 12 is sequentially formed on the substrate 10 made of sapphire, for example, and the material is GaN. The n-type ohmic contact layer 14 is made of, for example, an aluminum gallium nitride (AUGa ^ xN) wide-gap n-type confinement layer 16 and the active layer 18 is made of, for example, aluminum gallium nitride (Αιχ〇αι · χΝ). A wide band gap P-type confinement layer 20 and a p-type ohmic contact layer 22 made of, for example, gallium nitride (GaN). The active layer 18 may be a narrow band gap indium gallium nitride (InxGa). ^ N) single-layer structure, or η periodic multiple quantum well structure (η >> 1) of indium gallium nitride / gallium nitride (IruGa ^ N / GaN), which completes the m-nitride light-emitting diode.晶 结构。 Crystal structure. Then, plating the conductive electrode 24 and conductive electrode 26 on the epitaxial structure to complete the light-emitting diode manufacturing paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) • ... ........., OK ......... (Please read the notes on the back before filling out this page) Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 531907 A7-__ 5. Explanation of the invention (). The conductive electrode 24 mentioned here is a metal suitable for forming a good ohmic contact with a p-type semiconductor, such as nickel-gold alloy (Ni / Au); and the conductive electrode 26 is a metal suitable for forming a good ohmic contact with an n-type semiconductor. , Such as titanium aluminum alloy (Ti / Al). It is known that the melon nitride light-emitting diode includes two conductive electrodes of different electrical properties: a p-type conductive electrode 24 and an n-type conductive electrode 26. Therefore, in the manufacturing process of the conventional melon nitride light-emitting diode, the metal electrode must be completed by two evaporation steps. In addition, it is known that in the uppermost structure of a melamine nitride light-emitting diode, most of them are p-type nitrides, such as the p-type ohmic contact layer 22, because the dopant concentration of the p-type nitride is lower than that of the n-type halide. 'Does not provide effective current dispersion. Furthermore, in the structure of the conventional m-type nitride light-emitting diode, since the p-type I compound is exploded in the outside world, the external hydrogen ions are often drilled into the P during the cleaning or engraving step. -Type nitride, which reduces the effective carrier concentration of P-type nitride, which affects the light-emitting characteristics of the device. Due to the above disadvantages, the luminous efficiency of the group III nitride light-emitting diode is not good. Therefore, how to effectively further improve the luminous efficiency of the group III nitride light-emitting diode is still an expected goal of everyone. ........., OK ... (Please read the notes on the back before filling out this page) Intellectual Property of the Ministry of Economic Affairs Bureau of the Consumer Cooperatives printed body polarized two-color hair materialized nitrogen family knowledge 3 Zhongjing Mingming: the summary of the description and the above description of the head of the paper issued by the Chinese paper standard (CNS) A4 (210X297 mm) ) A7
531907 五、發明説明（） 的發光效率不i，因此本發明的目的之—，係提供一種新 的發光二極體結構及其製造方法，可得到較好的電流分散 肊力並且車乂不易叉到氫鈍化(?州—“〇幻的作用。而本發 明的另一目的，係提供一種新的發光二極體結構，可減少 不同電性之金屬電極的蒸鍍步驟，因此也同時減少元件製 作的時間。 根據以上所述之目的，本發明瓜族氮化物發光二極 體，包括：一基板；一退化接面位於基板之一側，此退化 接面為一江崎（Esaki)二極體，且由一 n+型層與位於n+型層 上之一 P型層所構成；一活性層位於退化接面上；一 p型 磊晶結構位於活性層與退化接面之間；一第一 η型磊晶結 構位於活性層上；以及，一第一 η型導電電極位於第一 η 型磊晶結構上。其中，本發明另一第二η型導電電極可位 於基板的另一側或位於具有暴露表面的η型歐姆接觸層 上。另外’上述之型層之材質係可選自於η+單層結構或 η +超晶格結構，而ρ +型層之材質係可選自於ρ +單層結構或 Ρ +超晶格結構。本發明皿族氮化物發光二極體中，更包括 一透明導電薄膜位於第一 η型蠢晶結構與第一 η型導電電 極之間。 本發明m族氮化物發光二極體之結構及其製造方法具 有減少製作時間、提高電流分散能力以及減少氫鈍化作用 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ..........’…·裝….....-訂.........輸 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531907 Α7 _____________Β7 經濟部智慧財產局員工消費合作社印製 五、發明説明（） 的優點，如此有助於發光二極體的生產與品質改善。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1圖所繪示為習知瓜族氮化物發光二極體之結構剖 面圖； 第2圖所緣示為根據本發明瓜族氮化物發光二極體之 結構剖面圖； 第3圖所繪示為第2圖中^型歐姆接觸層至p型侷限 層的能帶示意圖； 第4圖所繪示為根據本發明一較佳實施例之瓜族氮化 物發光二極體結構剖面圖；以及 第5圖所繪示為根據本發明另一實施例之m族氮化物 發光二極體結構剖面圖。 圖號對照說明： 10 基板 14 η型歐姆接觸層 18 活性層 22 Ρ型歐姆接觸層 12 緩衝層 16 η型侷限層 20 Ρ型侷限層 24 導電電極 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) ...........if: (請先閲讀背面之注意事項再填寫本頁) 、可 拳 531907 A7 _ —____— B7五、發明説明（） 26 導電電極 50 基板 52 缓衝層 54 η型歐姆接觸層 56 n +型層 58 ρ +型層 60 ρ型侷限層 62 活性層 64 η型侷限層 6 6 η型歐姆接觸層 68 導電電極 70 導電電極 72 退化接面 74 箭頭 76 箭頭 78 透明導電薄膜 .............- (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 發明詳細說明： 第2圖所緣示為根據本發明皿族氮化物發光二極體之 結構剖面圖。請參照第2圖，本發明係利用瓜族氮化物發 光二極體之製造方法來同步說明羾族氮化物發光二極體的 結構。首先，於基板5 0上形成一蠢晶結構，此蠢晶結構可 依序包括·低之緩衝層5 2 (又稱成核層）、η型歐姆接觸 層54、退化接面（Degenerate Junction)72、寬能隙的ρ型侷 限層60、活性層62、寬能隙的n型侷限層64、以及η型 歐姆接觸層66。接著，蒸鍵上η型的導電電極68與導電 電極7 0即完成本發明羾族氮化物發光二極體的製作。其 中，本發明瓜族氮化物發光二極體的特點在於形成一退化 接面7 2於活性層6 2下，企圖透過退化接面7 2，使得元件 由活性層62區分，可形成上η下ρ的結構。因此，請參职 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ' ---- 訂· 531907 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明説明（） 第1圖與第2圖，本發明ΠΙ族氮化物發光二極體與習知瓜 族氮化物發光二極體的結構極性相反，所以操作偏壓的極 性也不相同。其中，習知結構的正極加在上電極，負極加 在下電極；而本發明結構則為上電極加負極，下電極加正 極0 本發明Μ族氮化物發光二極體中的退化接面7 2，又稱 為江崎（Esaki)二極體，可以是高濃度的η+單層及高濃度的 Ρ +單層組合’也可以是高濃度η +超晶格加上高濃度ρ +超晶 格組合，或者由單層搭配超晶格的組合等不同極性的組 合，其中必須先形成一層η+型層56，再於其上形成Ρ +型層 58。退化接面72的主要原理在於：當半導體在高度掺雜 時，η型材料的費米能階（Fermi level)會高於導電能帶邊緣 (conduction band edge)，而p型材料的費米能階會低於價 電能帶邊緣（valence band edge)，將兩者相連接時因内建電 場的關係會使得η型材料與p型材料的接面厚度變窄，由 量子力學的觀點，載子穿透此薄層的機率將大為增加。當 此ρ + -η +接面順偏時，會產生負微分電阻（NDR)的現象，若 ρ - η接面反偏時，則接面電場愈顯強烈，能帶將更為陡力肖’ 連帶使得接面更薄，將更有利於載子以穿透的方式由Ρ型 價帶往η型導帶遷移，如第3圖所示。 第3圖所繪示為第2圖中η型歐姆接觸層至Ρ型侷限 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公爱) ..........…费.........、耵......... (請先閲讀背面之注意事項再填寫本頁) Α7531907 5. The luminous efficiency of the invention is not (i), so the purpose of the present invention is to provide a new light-emitting diode structure and a manufacturing method thereof, which can obtain better current dispersion force and make the car shaft difficult to fork. To hydrogen passivation (? Zhou-"Magic effect. Another object of the present invention is to provide a new light-emitting diode structure, which can reduce the evaporation step of metal electrodes with different electrical properties, and therefore also reduce the number of components Production time According to the above-mentioned purpose, the melons nitride light emitting diode of the present invention includes: a substrate; a degraded junction is located on one side of the substrate, and the degraded junction is an Esaki diode And consists of an n + -type layer and a P-type layer on the n + -type layer; an active layer is located on the degraded junction; a p-type epitaxial structure is located between the active layer and the degraded junction; a first η The epitaxial structure is located on the active layer; and a first n-type conductive electrode is located on the first n-type epitaxial structure. The second n-type conductive electrode of the present invention may be located on the other side of the substrate or may have a Η of exposed surface On the ohmic contact layer. In addition, the material of the above type layer may be selected from η + single layer structure or η + superlattice structure, and the material of the ρ + type layer may be selected from ρ + single layer structure or P + superlattice structure. The dish nitride nitride light-emitting diode of the present invention further includes a transparent conductive film located between the first n-type stupid crystal structure and the first n-type conductive electrode. The m-group nitride of the present invention emits light. The structure of the diode and its manufacturing method have the advantages of reducing production time, improving current dispersing ability, and reducing hydrogen passivation. The paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) .......... '... · Installation ........- Order ...... Lose (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 531907 Α7 _____________ Β7 Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperatives 5. The advantages of the invention description (), which will help to improve the production and quality of light-emitting diodes. Brief description of the drawings: The preferred embodiments of the present invention will be explained in the following text Zhongfu uses the following figures to explain in more detail. : Fig. 1 is a cross-sectional view showing the structure of a conventional melamine nitride light-emitting diode; Fig. 2 is a cross-sectional view showing a structure of a melamine-based nitride light-emitting diode according to the present invention; FIG. 4 is a schematic diagram of the energy band from the ^ -type ohmic contact layer to the p-type confinement layer in FIG. 2; and FIG. 4 is a cross-sectional view of a melons nitride light-emitting diode structure according to a preferred embodiment of the present invention; And FIG. 5 is a cross-sectional view showing a structure of a group m nitride light-emitting diode according to another embodiment of the present invention. Drawing number comparison description: 10 substrate 14 η-type ohmic contact layer 18 active layer 22 P-type ohmic contact layer 12 Buffer layer 16 η-type confinement layer 20 P-type confinement layer 24 Conductive electrode The paper size is applicable to China National Standard (CNS) A4 specification (210x297 mm) ........... if: (Please read first Note on the back, please fill out this page again), Ke Boxing 531907 A7 _ —____— B7 V. Description of the invention () 26 conductive electrode 50 substrate 52 buffer layer 54 n-type ohmic contact layer 56 n + type layer 58 ρ + type layer 60 ρ-type confinement layer 62 Active layer 64 η-type confinement layer 6 6 η-type ohmic contact layer 68 Electrode 70 Conductive electrode 72 Degraded interface 74 Arrow 76 Arrow 78 Transparent conductive film ............- (Please read the precautions on the back before filling this page) Consumption by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Detailed description of the invention printed by the cooperative: The edge of FIG. 2 is a cross-sectional view showing the structure of a dish-type nitride light-emitting diode according to the present invention. Referring to Fig. 2, the present invention uses a method for manufacturing a guar-nitride light-emitting diode to simultaneously explain the structure of a sulfide-nitride light-emitting diode. First, a stupid structure is formed on the substrate 50. This stupid structure may include a low buffer layer 5 2 (also referred to as a nucleation layer), an n-type ohmic contact layer 54 and a degenerate junction. 72. A p-type confinement layer 60 with a wide energy gap, an active layer 62, an n-type confinement layer 64 with a wide energy gap, and an n-type ohmic contact layer 66. Next, the n-type conductive electrode 68 and the conductive electrode 70 on the steam bond are completed to produce the Group VIII nitride light-emitting diode of the present invention. Among them, the melon-based nitride light-emitting diode of the present invention is characterized in that a degraded junction 72 is formed under the active layer 62, and an attempt is made to pass through the degraded junction 7 2 so that the element is distinguished by the active layer 62 and can form upper and lower η. Structure of ρ. Therefore, please participate in this paper. The size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm). ---- Order 531907 Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs A7 B7 V. Description of Invention () Section 1 As shown in FIG. 2 and FIG. 2, the III-nitride light-emitting diodes of the present invention have opposite polarities to the structures of the conventional melon-nitride light-emitting diodes, so the polarity of the operating bias is also different. Among them, the positive electrode of the conventional structure is added to the upper electrode, and the negative electrode is added to the lower electrode; and the structure of the present invention is an upper electrode plus a negative electrode, and a lower electrode plus a positive electrode. 0 Degraded junction in the group M nitride light emitting diode of the present invention 7 2 , Also known as Esaki diode, can be a high concentration of η + single layer and a high concentration of P + single layer combination 'can also be a high concentration η + superlattice plus a high concentration ρ + superlattice Combination, or a combination of different polarities, such as a combination of a single layer and a superlattice, in which a η + type layer 56 must be formed first, and then a P + type layer 58 is formed thereon. The main principle of the degraded junction 72 is that when the semiconductor is highly doped, the Fermi level of the η-type material will be higher than the conduction band edge, and the Fermi energy of the p-type material The order will be lower than the valence band edge. When the two are connected, the thickness of the interface between the η-type material and the p-type material will be narrowed due to the built-in electric field. From the viewpoint of quantum mechanics, the carrier The chance of penetrating this thin layer will greatly increase. When the ρ + -η + junction is forward-biased, a negative differential resistance (NDR) phenomenon will occur. If the ρ-η junction is reverse-biased, the electric field at the junction will be more intense and the energy band will be sharper. 'The joint makes the interface thinner, which will be more conducive for carriers to migrate from the P-type valence band to the n-type conduction band in a penetrating manner, as shown in Figure 3. Figure 3 shows the η-type ohmic contact layer to the P-type limitation in Figure 2. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210x297 public love) ............... fee. ........ 、 耵 ......... (Please read the notes on the back before filling in this page) Α7
531907 五、發明説明（） 層的能帶示意圖，其中由左至右分別為： + P型侷限層60、 P 51層58、η型層56與n蜇歐姆接觸層54。請參照第3 圖，當發光二極體元件受到反偏時，ρ'η +接面：得陡崎， 使得電子* “價帶輕易能穿透至η+導帶，如箭頭Μ所 示。換句話說，即相當於電洞往反方向移動至ρ型侷限層 ⑼，往活性層貢獻電洞，如箭頭76所示。故若此退化接面 72濃度夠高，薄膜品質夠女子，則此ρ'η +接面即相當於一個 非常小的線性電阻，對順向電壓降改變不大，但卻可使下ρ 上η的發光二極體架構順利達成，對元件的光特性將更有 幫助。 由於本發明瓜族氮化物發光二極體中，元件最上層為 高濃度η型半導體材料（η型歐姆接觸層66)與金屬材料（導 電電極70)的接觸，如此較第丨圖之習知結構中，低濃度ρ 型半導體材料（Ρ型歐姆接觸層22)與金屬材料（導電電極24) 的接觸電阻來的低。本發明之優點將可補償此因退化接面 7 2所多出的阻抗，甚至使得整體發光二極體的順向電壓降 更小。 在本發明一較佳實施例中，為了使發光二極體的元件 特性更為完備，因此會在蒸鍍導電電極70於η型歐姆接觸 層66之前，先鍍上一層透明、高導電率且功函數與η型歐 姆接觸層66適合的透明導電薄膜78。此透明導電薄膜78 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ....................、可.........,^9. (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 531907 Α7 ___ Β7 五、發明說明（) 的作用在於可使得晶粒整體的電流分散均勻，且須具備 80%以上的穿透率’避免將正向發射的光子遮蔽，如第4 圖所示。 本發明IE族氮化物發光二極體中，基板5 0的材質可選 自於藍寶石、氧化鋰鈣（UCa〇2)、氧化鋰鋁（LiAl〇2)、氧化 鎮銘（MgAl2〇4)、碳化矽（SiC)、矽（Si)、砷化鎵（GaAs)與氮 化链鎵銦（AlGalnN)中的任一者所構成。磊晶結構係由瓜族 氮化物所構成’其中缓衝層52之材質可以是氮化鋁鎵銦 (AlxGayInzN’ 其中 〇Sx、y、z$l、且 x+y+z=l)，以氮 化鎵為較佳材料，緩衝層5 2亦可摻雜雜質，如石夕或鎂 (Mg)，但以未摻雜者較佳；而^型歐姆接觸層54、退化接 面72、ρ型侷限層60、活性層62、η型侷限層64與η型 歐姆接觸層66等也可以由氮化鋁鎵銦（AlxGayinzN，其中〇 $x、y、z$l、且x+y+z=l)所構成。其中，各層組成， 亦即X值、y值與z值，全由設計的發光波長及元件電特性 而疋。形成退化接面7 2的材料須做一取捨，當材料的能隙 愈小時，其較易形成退化的能帶，但卻也必須避免當能隙 過窄時所造成光子再吸收的現象，所以必須儘量選擇能使 接面退化且不吸收活性層發出光子的材料。除此之外，ρ 型侷限層60與η型侷限層64的能隙也須大於活性層62 , 以有效侷限載子，提高發光效率。另外，活性層62可為比 Ρ型侷限層60與η型侷限層64能隙小的窄能隙單層結構， 9 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ..........::·裝…......、可.........S (請先閲讀背面之注意事項再填寫本頁) 531907 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 亦可為多層大小能隙交替的週期結構，搭配p型侷限層6〇 或η型侷限層64後，可形成雙異質接面發光二極體或是多 重1子井發光二極體。其中量子井的數目可由丨個變化至 3 0個，但以具有1個至1 〇個量子井的發光二極體，其發 光效率較佳。而鍍在η型歐姆接觸層66上的透明導電薄膜 78之材質與習知鍍在ρ型材料者不盡相同，可為鈦鋁合金 (Ti/Al)、氧化銦（Ιη2〇3)、氧化錫（Sn〇2)、氧化銦錫（1丁〇)、 氧化錄錫（CTO)、氧化鋅（Zn〇）、或氮化鈦鎢（TiWN)中的任 一種材料。n型之導電電極68與導電電極70的材質可選 於鈦、鋁、金等單層金屬及其合金。 第5圖所繪示為根據本發明另一實施例之羾族氮化物 發光二極體結構剖面圖。若基板5〇為由η型之碳化石夕、珅 化鎵、或矽等材料所構成的導電基板，則本發明將發光二 極體元件製作成如第5圖之結構，以節省晶粒的面積。其 中’各層的結構大致與第2圖相同，在基板5 0具有蟲晶結 構’例如為緩衝層5 2、η型歐姆接觸層5 4、退化接面7 2 (η + 型層56與ρ +型層58)、ρ型侷限層6〇、活性層62、η型侷 限層64、η型歐姆接觸層66、以及透明導電薄膜78。另外， 在基板5 0不具蠢晶結構的一側具有η型之導電電極$ 8 , 而另一 η型之導電電極70係形成於透明導電薄膜78上。 本發明此一瓜族氮化物發光二極體於成長緩衝層52時，必 須考慮其導電性，所以緩衝層52須摻雜n型雜質。 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ------------^^裝---------、可--------- (請先閲讀背面之注意事項再填寫本頁) 531907531907 V. Schematic diagram of the energy band of the () layer, from left to right: + P-type confinement layer 60, P 51 layer 58, n-type layer 56 and n 蜇 ohmic contact layer 54. Please refer to FIG. 3, when the light-emitting diode element is reverse-biased, the ρ'η + junction: It is steep, so that the electron * "valence band can easily penetrate to the η + conduction band, as shown by arrow M. In other words, it is equivalent to the hole moving in the opposite direction to the ρ-type confined layer ⑼, and the hole is donated to the active layer, as shown by arrow 76. Therefore, if the concentration of the degraded junction 72 is high enough and the film quality is sufficient for women, then This ρ'η + junction is equivalent to a very small linear resistance, which does not change the forward voltage drop much, but can make the light-emitting diode structure of η above ρ smoothly reach, and the light characteristics of the device will be more It is helpful because the top layer of the element in the guar nitride nitride light-emitting diode of the present invention is the contact between the high-concentration n-type semiconductor material (n-type ohmic contact layer 66) and the metal material (conductive electrode 70). In the conventional structure, the contact resistance between the low-concentration ρ-type semiconductor material (the P-type ohmic contact layer 22) and the metal material (the conductive electrode 24) is low. The advantages of the present invention can compensate for this deterioration due to the junction 7 2 The extra impedance even makes the forward voltage of the overall light-emitting diode In a preferred embodiment of the present invention, in order to make the device characteristics of the light-emitting diode more complete, a transparent, high-level plating is performed before the conductive electrode 70 is evaporated on the n-type ohmic contact layer 66. A transparent conductive film 78 having a conductivity and a work function suitable for the n-type ohmic contact layer 66. This transparent conductive film 78 is suitable for the Chinese National Standard (CNS) A4 specification (210X297 mm) on this paper size ......... ..........., can ........., ^ 9. (Please read the notes on the back before filling out this page) The Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives, Printed Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 531907 Α7 ___ Β7 V. Description of the invention () The function of the invention is to make the current of the whole crystal grains uniform, and it must have a transmittance of more than 80%. The masking is shown in Figure 4. In the IE group nitride light-emitting diode of the present invention, the material of the substrate 50 may be selected from sapphire, lithium calcium oxide (UCa〇2), lithium aluminum oxide (LiAl〇2), Oxidation ballast (MgAl204), silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), and indium gallium nitride chain (AlGalnN). The epitaxial structure is made of melons nitride. 'The material of the buffer layer 52 may be aluminum gallium indium nitride (AlxGayInzN', where 0Sx, y, z $ l, and x + y + z = l), using gallium nitride as the preferred material, and the buffer layer 52 may also be doped with impurities, such as Shi Xi or magnesium (Mg), but it is better to be undoped; and ^ ohm The contact layer 54, the degraded junction 72, the p-type constrained layer 60, the active layer 62, the n-type constrained layer 64, and the n-type ohmic contact layer 66 can also be made of indium aluminum gallium nitride (AlxGayinzN, of which 0 $ x, y, z $ l and x + y + z = 1). Among them, the composition of each layer, that is, the X value, y value, and z value, is all determined by the designed emission wavelength and the electrical characteristics of the element. The material that forms the degenerate junction 72 needs to be selected. When the energy gap of the material is smaller, it is easier to form a degraded energy band, but it is also necessary to avoid the phenomenon of photon reabsorption when the energy gap is too narrow. Materials that can degrade the junction and do not absorb photons emitted by the active layer must be selected as much as possible. In addition, the energy gap between the ρ-type confinement layer 60 and the η-type confinement layer 64 must also be greater than the active layer 62 to effectively confine carriers and improve luminous efficiency. In addition, the active layer 62 may have a narrow energy gap single-layer structure with a smaller energy gap than that of the P-type confinement layer 60 and the η-type confinement layer 64. 9 This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) .. ........ :: ........., but ......... S (Please read the notes on the back before filling out this page) 531907 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employee consumer cooperative A7 B7 V. Description of the invention () It can also be a periodic structure with alternating energy gaps of multiple sizes. When combined with p-type confinement layer 60 or η-type confinement layer 64, a double heterojunction light-emitting diode can be formed. Or multiple 1-well LEDs. Among them, the number of quantum wells can be changed from one to thirty, but a light emitting diode having one to ten quantum wells has better light emitting efficiency. The material of the transparent conductive film 78 plated on the η-type ohmic contact layer 66 is different from those conventionally plated on the ρ-type material, and can be titanium aluminum alloy (Ti / Al), indium oxide (Ιη203), and oxide. Any of tin (SnO2), indium tin oxide (1but0), tin oxide (CTO), zinc oxide (Zn0), or titanium tungsten nitride (TiWN). The material of the n-type conductive electrode 68 and the conductive electrode 70 may be selected from single-layer metals such as titanium, aluminum, and gold, and alloys thereof. FIG. 5 is a cross-sectional view showing a structure of a Group VIII nitride light-emitting diode according to another embodiment of the present invention. If the substrate 50 is a conductive substrate made of materials such as n-type carbonized carbide, gallium halide, or silicon, the present invention makes the light-emitting diode element into a structure as shown in FIG. 5 in order to save grains. area. Among them, the structure of each layer is substantially the same as that in FIG. 2 and has a worm-like structure on the substrate 50. For example, the buffer layer 5 2, the n-type ohmic contact layer 5 4, and the degraded junction 7 2 (η + type layer 56 and ρ + Layer 58), p-type confinement layer 60, active layer 62, n-type confinement layer 64, n-type ohmic contact layer 66, and transparent conductive film 78. In addition, an n-type conductive electrode $ 8 is provided on one side of the substrate 50 having no stupid crystal structure, and another n-type conductive electrode 70 is formed on the transparent conductive film 78. When the melon-based nitride light-emitting diode of the present invention grows the buffer layer 52, its conductivity must be considered, so the buffer layer 52 must be doped with n-type impurities. This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ------------ ^^ pack --------- 、 may ------- -(Please read the notes on the back before filling this page) 531907
五、發明説明( 本發明HI族氮化物發光二極體的導電 电極6 8愈導電電 極70皆為η型，並可於同一步驟中蒸鍍相一 一 u何料，以減少 元件製作的時間。但是若以導電性基板所 作、並為節省 面積之發光二極體，導電電極68與導電電極7〇雖皆為[ 型且可由同樣金屬所構成，卻需分兩次蒸鍍步驟以开;成電 極。本發明元件結構的最上層為n型氮化物材料…型歐姆 接觸層66)，其可摻雜的濃度較p型氮化物材料高，所以可 較習知結構得到較好的電流分散能力。而本發明整個發光 二極體元件的外部，除了磊晶結構的側面外，其他暴露於 外界的部份皆為η型氮化物材料，如η型歐姆接觸層5 4與 η型歐姆接觸層66，由前人的研究中可知，^型氮化物較ρ 型氮化物不易受到氫鈍化，故在製作過程中較不易影響發 光二極體的元件特性。 (請先閲讀背面之注意事項再填寫本頁) 、一二 b 明範改 發利效 本專等 為請之 僅申成。 述之完内 所明所圍 上發下範 以衣神利 ，定精專 的限之請 解X矛申 瞭h揭之 所一所述 員 3 明下 人並發在 之，本含 術已離包 技Jft脫應 此例未均 悉施它， 熟實其飾 如佳凡修 較；或 之圍變 § 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)V. Description of the invention (The conductive electrodes of the HI-nitride light-emitting diodes of the present invention 6 and 8 are more conductive electrodes 70 are η-type, and can be vapor-deposited in the same step one by one to reduce material production. Time. However, if the light-emitting diode is made of a conductive substrate and saves area, although the conductive electrode 68 and the conductive electrode 70 are both [-type and can be composed of the same metal, two evaporation steps are required to open the electrode. ; The electrode. The uppermost layer of the element structure of the present invention is n-type nitride material ... type ohmic contact layer 66), which can be doped at a higher concentration than the p-type nitride material, so it can get better current than the conventional structure Dispersion ability. The exterior of the entire light-emitting diode device of the present invention, except for the side of the epitaxial structure, other parts exposed to the outside are η-type nitride materials, such as η-type ohmic contact layer 54 and η-type ohmic contact layer 66 According to previous studies, ^ -type nitride is less susceptible to hydrogen passivation than ρ-type nitride, so it is less likely to affect the device characteristics of light-emitting diodes during the manufacturing process. (Please read the precautions on the back before filling out this page), one or two b Ming Fan change the benefits of this book, etc. Please only apply for. Fan Yiyi Shenli was sent up and down in the end of the description, and the limit of the special limit was set. X Spear applied for a member of the uncovered place. 3 The next generation was concurrently included in the book. Baotiao Jft did not fully understand this case, and used it as it is. If it is correct, it may be modified. § The paper is printed in accordance with the Chinese National Standard (CNS) A4 specification. (210X297 mm)