TW529117B - Spiral inductor with high Q factor and its manufacturing method - Google Patents
Spiral inductor with high Q factor and its manufacturing method Download PDFInfo
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529117 五、發明說明α) 【發明領域】 本發明係有關於一種積體電路製程,特別是有關於一 種具有高品質因數(q Factor,簡稱Q值)之迴旋狀電感 (spiral inductor)及其製造方法。 【習知技術】 般均由纏繞成螺旋狀的導線所構成 電感器 ^ 一一… ' …… Μ ,丹社通 訊没備之射頻(radi〇 freqUency ;rf)電路上的應用相 §廣泛,例如可應用在行動電話、無線電路、無線數據 機以及其他的通訊器材。而在積體電路技術的進步下, 使知電感器可以利用積體電路技術來製造,且 其他元^於單—晶方(chip)上,例如是在石夕塊(電上529117 V. Description of the invention α) [Field of the invention] The present invention relates to an integrated circuit manufacturing process, and in particular, to a spiral inductor having a high quality factor (q Factor, referred to as Q value) and its manufacturing. method. [Knowledge technology] Inductors are generally composed of spirally wound wires ^……… Μ, Danshe Communication ’s unavailable radio frequency (radiofreqUency; rf) circuits are widely used, such as Can be used in mobile phones, wireless circuits, wireless modems and other communication equipment. With the advancement of integrated circuit technology, it is known that inductors can be manufactured using integrated circuit technology, and other elements are on single-crystal chips (chips, for example,
SlllC〇n)基底上、絕緣層上有矽(silicon on insulat〇r SOI)基底上或藍窨石卜古々γ·ι· ’ 寶石上有矽(silicon on sapphire,s〇s) 基底上,以降低製造電路所需耗費的成本。目 合於積體電路製程之雷咸哭沾钍搆&、 吊見整 ^ A I枉之電感态的結構為迴旋狀金屬層。鈇 而,在積體電路製程曰益要求縮小化的今曰:SlllCon) substrate, silicon on insulatr SOI substrate on the insulation layer or blue onyx boulder ·· ι · 'silicon on sapphire (sos) substrate To reduce the cost of manufacturing the circuit. The structure of the inductive state, which is suitable for the integrated circuit manufacturing process, is a convoluted metal layer.鈇 However, today's integrated circuit manufacturing process requires a reduction in size:
:化=氣相沉積方法整合於積體電路製程之單純:旋:J 地益、12加電感值而不得不增加電感面積的做法,已、軿 漸地無法符合現代積體電路縮小化、7忟法已漸 與高品質因數Q的需求。、 不此降低電感值L· 品質因數Q的計算公式如下所示·· Q= ωΐ/ r 其中ω為共振頻率,^為 阻。因此,如果要提 電二值:為電感本身的電 買因數Q,-個研究方向是提高 529117 五、發明說明(2) 電感值’另一個研究方向則是降低電感本身的電阻。在相 關研究方面’目前已有揭露許多種方法,例如調整電感線 圈(coil)縱深比(aspect ratio)以降低電感本身的電阻、 以銅線取代鋁合金製作電感線圈以降低電感本身的電阻、 增加電感區域面積以提南電感值、形成電感於非晶質( amophous)區域之上以避免與基底耦合產生鏡像電流 (eddy current )等等方法,另外在美國專利第6〇54329 號中’亦揭示採用鐵氧磁性材料(f e r r 〇 m a g n e ^ i c material)包覆電感線圈及以狹長片狀的鐵氧磁性材料當 作電感核芯(core)的方法。然而對於進一步符合積體電路 縮小化的做法,尚未發現有清楚詳述的揭露。 【發明之目的】 ,有鑑於此,本發明提供一種具有高Q值的迴旋狀電感 的製造方法,以有效增加電感值(亦或品質因素)及避免相 鄰電感的耦合干擾(coupling n〇ise),並減少電感區域的 面積以符合積體電路縮小化的要求。 再者本發明k供一種具有高Q值的迴旋狀電感,以 有效增加電感(亦或品質因素)及避免相鄰電感的耦合干擾 ’並減少電感區域的面積以符合積體電路縮小化的要求。 、因此,本發明提供一種具有高Q值的迴旋狀電感的製 仏方法,包括下列步驟:(a)提供一基底,並在該基底上 形成一介電層,(b)於該介電層上,形成一迴旋狀的第一 凹槽(c)填入第一金屬於該第一凹槽内以形成第一金屬 層用以當作電感線圈,以及(d )進行化學機械研磨處理: Chemical = Vapor deposition method is integrated into the simplicity of integrated circuit manufacturing process: Rotation: J Diyi, 12 The method of adding inductance value and having to increase the inductance area, has been gradually unable to meet the modern integrated circuit shrinking, 7 The method has gradually been demanded with high quality factor Q. The formula for calculating the figure of merit Q is not reduced. Q = ωΐ / r where ω is the resonance frequency and ^ is the resistance. Therefore, if you want to increase the binary value of electricity: the inductor's electricity purchase factor Q, one research direction is to increase 529117 V. Description of the invention (2) Inductance value 'Another research direction is to reduce the resistance of the inductor itself. In related research, many methods have been disclosed, such as adjusting the aspect ratio of the inductor to reduce the resistance of the inductor itself, replacing the aluminum alloy with copper wires to reduce the resistance of the inductor itself, increasing The area of the inductance area is to raise the inductance value, form an inductance on the amorphous area to avoid coupling with the substrate to generate an eddy current, etc. In addition, it is also disclosed in US Patent No. 6054329. A method in which a ferrite magnetic material (ferromamag ^ ic material) is used to cover an inductor coil and a strip-shaped ferrite magnetic material is used as an inductor core. However, for further compliance with the miniaturization of integrated circuits, no clear and detailed disclosure has been found. [Objective of the Invention] In view of this, the present invention provides a method for manufacturing a convolute inductor with a high Q value, so as to effectively increase the inductance value (or quality factor) and avoid coupling interference of adjacent inductors (coupling noisy). ), And reduce the area of the inductance area to meet the requirements of integrated circuit reduction. Furthermore, the present invention provides a swirling inductor with a high Q value, so as to effectively increase the inductance (or quality factor) and avoid the coupling interference of adjacent inductors, and reduce the area of the inductor area to meet the requirements for the reduction of integrated circuits. . Therefore, the present invention provides a method for manufacturing a convolute inductor with a high Q value, including the following steps: (a) providing a substrate, and forming a dielectric layer on the substrate, (b) on the dielectric layer A circular first groove is formed (c) and a first metal is filled in the first groove to form a first metal layer to be used as an inductance coil; and (d) a chemical mechanical polishing process is performed
529117 五、發明說明(3) 。其中在該步驟(b )之後更包栝下列步驟··於迴旋狀的該 第一凹槽的中心部分,形成一既定形狀之第二凹槽,以及 填入第二金屬於該第二凹槽内以形成第二金屬層,用以當 作電感核芯。又其中在該步驟(b )之後更包括下列步驟: 於迴旋狀的該第一凹槽的外圍部分,形成一既定形狀之第 三凹槽,以及填入第三金屬於該第三凹槽内以形成第三金 屬層,用以當作相鄰電感耦合干擾之遮蔽屏障。 另外’本發明提供一種具有高Q值的迴旋狀電感,包 括下列構造:一基底,該基底上具有一介電層,一第一凹 槽,形成於該介電層上,以及一第一金屬層,形成於該介 電層的第一凹槽内。而該迴旋狀電感更包括下列構造:Λ 一 第二凹槽,形成於該第一凹槽的中心部分,以及一第二金 屬層,形成於該第二凹槽内。又該迴旋狀電咸爭白 構造:一第三凹槽,形成於該第一凹槽的2=括:: 一第三金屬層,形成於該第三凹槽内。 為讓本發明之上述目的、特徵及優點能更明顯 :文特舉-較佳實施例’並配合所附圖式,作詳細說明如 I · 【圖式簡單說明】 第1圖係繪示本發明之迴旋狀電感的結 第2圖至第4圖係繪示根據本發明較 再^面圖。 電感的上視示意圖。 耳施例之迴旋狀 【符號說明】 1 0〜基底; 1卜介電層;529117 V. Description of the invention (3). After the step (b), the following steps are further included: a second groove having a predetermined shape is formed at the center portion of the first groove in a convolute shape, and a second metal is filled in the second groove A second metal layer is formed inside, which is used as an inductor core. Furthermore, after the step (b), the method further includes the following steps: forming a third groove of a predetermined shape on a peripheral portion of the first groove of the convolution shape, and filling a third metal in the third groove; A third metal layer is formed to serve as a shielding barrier for adjacent inductive coupling interference. In addition, the present invention provides a convolute inductor having a high Q value, including the following structures: a substrate having a dielectric layer on the substrate, a first groove formed on the dielectric layer, and a first metal Layer formed in the first groove of the dielectric layer. The convolute inductor further includes the following structures: a second groove formed in a central portion of the first groove, and a second metal layer formed in the second groove. The convolute electro-determination structure: a third groove formed in the first groove, including: a third metal layer formed in the third groove. In order to make the above-mentioned objects, features, and advantages of the present invention more obvious: Wentex-preferred embodiment 'and the accompanying drawings are described in detail as I. [Simplified description of the drawings] Figure 1 is a drawing Figures 2 to 4 of the junctions of the invention of the convolute inductor are further diagrams according to the present invention. Top view of the inductor. Ear-shaped example of convolution [Symbol description] 10 ~ substrate; 1 dielectric layer;
$29il7$ 29il7
12〜第一凹槽;13〜第二凹槽; 14〜第三凹槽;22〜第一金屬層(電感線圈); 23〜第二金屬層(電感核芯); 33 ’42〜第三金屬層(干擾遮蔽屏障)。 【貫施例】 第1圖係繪示本發明之迴旋狀電感的結構剖面圖。第2 $至第4圖係繪示根據本發明較佳實施例之迴旋狀電感的 上视示意圖。12 ~ first groove; 13 ~ second groove; 14 ~ third groove; 22 ~ first metal layer (inductive coil); 23 ~ second metal layer (inductive core); 33'42 ~ third Metal layer (interference shielding barrier). [Exemplary Embodiment] FIG. 1 is a cross-sectional view showing a structure of a swirling inductor of the present invention. Figures 2 to 4 are schematic top views of a whirling inductor according to a preferred embodiment of the present invention.
首先請參照第1、2圖,本發明之高品質因數〇之迴旋 ’電感的製造方法,包括下列步驟:(a)提供一基底1〇,First, please refer to FIG. 1 and FIG. 2. The manufacturing method of the high-quality factor gyration ’inductor of the present invention includes the following steps: (a) providing a substrate 10,
八=形成70件和内連線(未繪示),並在該基底1〇上形成一 ^、層11,4介電層丨丨例如是以熱氧化法或化學氣相沉積 所形成之二氧化矽層;(b)於該介電層1〇上,利用微影 =刻法,形成一迴旋狀的第一凹槽12 ;(c)填入第一金屬 顚该第-凹槽12内以形成第一金屬層22,用以當作電感線 圈,而該第-金屬例如是以化學氣相沉積法所填入的銅、 =、鈦、、金、銀或鋁銅合金等具有高導電性的金屬,以利 、低電感線圈本身的電阻,而提高品質因數Q值;以及 j行化學機械研磨處理,以磨去殘留於介電層i i表面的金 立在此強凋的是該迴旋狀可為方形、圓形或橢圓形等任 思迴旋形狀,本實施例以方形迴旋狀為例。 接著凊參照第1、2圖,其中在該步驟(b )之後更包括 下列步驟··於迴旋狀的該第一凹槽12的中心部分,形成一 既定形狀之第二凹槽13 ;以及填入第二金屬於該第二凹槽Eight = forming 70 pieces and interconnects (not shown), and forming a dielectric layer on the substrate 10, a layer 11, 4 dielectric layer 丨 丨 formed by thermal oxidation or chemical vapor deposition A silicon oxide layer; (b) forming a convoluted first groove 12 on the dielectric layer 10 by photolithography = engraving; (c) filling the first metal into the first groove 12 The first metal layer 22 is formed to be used as an inductor coil, and the first metal, such as copper, titanium, titanium, gold, silver, or aluminum-copper alloy, which is filled by a chemical vapor deposition method, has high conductivity. Metal, in order to improve the resistance of the low-inductance coil itself and improve the quality factor Q; and j-line chemical mechanical polishing to remove the gold standing on the surface of the dielectric layer II. It can be any convoluted shape such as a square, a circle, or an ellipse. This embodiment takes a square convoluted shape as an example. Next, referring to FIGS. 1 and 2, the following steps are further included after the step (b). A second groove 13 of a predetermined shape is formed at the center portion of the first groove 12 in a convoluted shape; and Insert a second metal into the second groove
529117 發明說明(5) 13内以形成第二金屬層23,田 , , 金屬例如是以沉積法所填入=以當作電感核怒,而該第二 ^ A. / A 1 . 、 、 的鐵氧磁性材料,例如鋁鋅# 透磁合金在此特: 因為鐵氧磁性材料中的原子磁矩是平行相同方 二士“:非排列’⑨具有自發磁化的保磁作用,填入鐵氧磁 # 、料於迴旋狀電感的中心(即具有最大磁通量的部分), 可以避免電磁能量耗損,進而增大電感的導磁係數“ (permeability),亦即增加電感值L和提高品質因數卩值。 另外上述形成一既定形狀之第二凹槽13,係表示該形 狀可為任意形狀,並不予限定,然重點是該既定形狀之第 二凹槽13至少要包含電感的中心(即具有最大磁通量的部 分)°再者,為了確保避免電磁能量耗損,第二凹槽丨3的 深度要比第一凹槽1 2深。 接著請參照第1、3及4圖,又其中在該步驟(b)之後更 包括下列步驟:於迴旋狀的該第一凹槽1 2的外圍部分,形 成一既定形狀之第三凹槽14 ;以及填入第三金屬於該第三 凹槽14内以形成第3圖之第三金屬層32,或第4圖之第三金 屬層42,用以當作相鄰電感耦合干擾之遮蔽屏障,而該第 三金屬例如是以沉積法所填入的鐵氧磁性材料,例如鋁鎳 鈷合金、透磁合金。在此強調的是,該既定形狀之第三四 槽14的形狀可為連續狀,而形成如第3圖之第三金屬層32 •’該既定形狀之第三凹槽14的形狀也可為不連續狀,而形 成如第4圖之第三金屬層42。也就是說,包圍電感的外圍 遮蔽屏障並不限定任何形狀,重點是在縮小化的積體電路529117 Description of the invention (5) 13 to form a second metal layer 23, Tian,, For example, the metal is filled with a deposition method = to be used as an inductor, and the second ^ A. / A 1.,, Ferromagnetic materials, such as aluminum zinc # magnetically permeable alloys are here: Because the magnetic moments of the atoms in the ferrite magnetic materials are parallel and the same square ": non-aligned '⑨ has the coercive effect of spontaneous magnetization, filled with ferrite Magnetic # is located in the center of the convolute inductor (that is, the part with the largest magnetic flux), which can avoid the loss of electromagnetic energy and increase the permeability of the inductor (permeability), that is, increase the inductance L and improve the quality factor 卩. In addition, the formation of the second groove 13 of a predetermined shape means that the shape can be any shape and is not limited, but the important point is that the second groove 13 of the predetermined shape must include at least the center of the inductance (that is, it has the maximum magnetic flux Part) ° Furthermore, in order to ensure the avoidance of electromagnetic energy loss, the depth of the second groove 3 is deeper than that of the first groove 12. Please refer to FIGS. 1, 3 and 4, and after the step (b), the following steps are further included: a third groove 14 having a predetermined shape is formed on the peripheral portion of the first groove 12 in a spiral shape. ; And a third metal is filled in the third groove 14 to form the third metal layer 32 in FIG. 3 or the third metal layer 42 in FIG. 4, which is used as a shielding barrier for adjacent inductive coupling interference. The third metal is, for example, a ferrite magnetic material filled by a deposition method, such as an aluminum-nickel-cobalt alloy or a magnetically permeable alloy. It is emphasized here that the shape of the third fourth groove 14 of the predetermined shape may be continuous, and the third metal layer 32 as shown in FIG. 3 is formed. The shape of the third groove 14 of the predetermined shape may also be Discontinuously, a third metal layer 42 is formed as shown in FIG. 4. In other words, the shielding barrier surrounding the inductor is not limited to any shape, and the focus is on the reduced integrated circuit
529117529117
中’為了避免相鄰電感互相耦合干擾時,本發明的用以當 作干擾遮蔽屏障的該第三金4層,就能發揮屏障的作用。 另外,請參照第卜2、3及4圖,本發明提供一種具有 高Q值的迴旋狀電感,包括下列構造:一基底1(),該基底 上具有一介電層11,該介電層丨丨可為二氧化矽;一第一凹 槽12,形成於該介電層"上;以及—第一金屬層22,形成 於該介電層11的第一凹槽12内,而該第一金屬可以是銅、 鋁、鈦、金、銀或鋁銅合金等具有高導電性的金屬,以利 降低電感線圈本身的電P且’而提高品質因數_。該迴旋 狀電感更包括下列構造:一第二凹槽13,形成於該第一凹 槽13的中心部分;以及一第二金屬層23,开》成於該第二凹 槽1 3内,而該第二金屬可以是鐵氧磁性材料,例如鋁鎳鈷 合金(AlNiCo Alloy)、透磁合金(Permall〇y),用以避免 電磁能量耗損,增加電感值及Q值。又其中該迴旋狀電感 更包括下列構造:一第三凹槽14,形成於該第一凹槽14的 外圍部分,以及一第三金屬層32,形成於該第三凹槽14内 ,而該第二金屬可以是鐵氧磁性材料,例如鋁鎳鈷合金、 透磁合金,用以當作相鄰電感耦合干擾之遮蔽屏障。 在此強調的是,該既定形狀之第三凹槽14的形狀可為 連續狀,而形成如第3圖之第三金屬層32 ;該既定形狀之 第二凹槽14的形狀也可為不連續狀,而形成如第4圖之第 三金屬層42。 由於本發明利用鐵磁性材料,例如鋁鎳鈷合金、透磁 合金,一方面填入電感的中心(即具有最大磁通量的部分)In order to prevent adjacent inductors from coupling and interfering with each other, the third layer of gold 4 used as an interference shielding barrier in the present invention can play the role of a barrier. In addition, referring to FIGS. 2, 3, and 4, the present invention provides a swing-type inductor having a high Q value, including the following structures: a substrate 1 () having a dielectric layer 11 on the substrate, the dielectric layer丨 丨 may be silicon dioxide; a first groove 12 is formed on the dielectric layer; and a first metal layer 22 is formed in the first groove 12 of the dielectric layer 11, and the The first metal may be a metal having high conductivity such as copper, aluminum, titanium, gold, silver, or an aluminum-copper alloy, so as to reduce the electric P of the inductor coil itself and improve the quality factor. The convolute inductor further includes the following structure: a second groove 13 formed in a center portion of the first groove 13; and a second metal layer 23 formed in the second groove 13 and The second metal may be a ferrite magnetic material, such as AlNiCo Alloy or Permalloy, to avoid electromagnetic energy loss and increase the inductance value and Q value. The convolute inductor further includes the following structures: a third groove 14 formed in a peripheral portion of the first groove 14 and a third metal layer 32 formed in the third groove 14, and the The second metal may be a ferrite magnetic material, such as an aluminum-nickel-cobalt alloy or a magnetically permeable alloy, which is used as a shielding barrier for adjacent inductive coupling interference. It is emphasized here that the shape of the third groove 14 of the predetermined shape may be continuous, and a third metal layer 32 as shown in FIG. 3 is formed; the shape of the second groove 14 of the predetermined shape may also be different. Continuously, a third metal layer 42 as shown in FIG. 4 is formed. Since the present invention utilizes ferromagnetic materials, such as aluminum-nickel-cobalt alloys and magnetically permeable alloys, on the one hand, the center of the inductor is filled (that is, the part with the largest magnetic flux)
0503-6151TW ; TSMC2000-0947 ; Jacky.ptd 529117 五、發明說明(7) 並且為了確保避务雷磁 旦 電感線圈,,使J電感值::耗損,電感核芯的深度要比 高了 Cl f S ^ Λ I 為知做法的電感值高,亦即提 阿ί π口質因數Q值;當鈥另一 丨风 值的狀況下,本發明提供了链面來看’在提供相同電感 缩小化所C 另外,也為了避免積體電路 袖小化所π來的相鄰電感 供了一插刹田挪1 相稱合干擾的問>€,本發明提 供了種利用鐵磁性材料作為相鄰雷咸耦八千捧夕说献Μ 障的電感製作方法。因此太恭^電戊輛口干擾之遮蔽屏 進步性。 因此本發明對相關領域具有實用性與 【發明之特徵與效果】 綜上所述,本發明至少提供下列優點: 人今h =利用鐵磁性材料’例如鋁鎳鈷合金、透磁 =枝ΪΓΓ心(即具有最大磁通量的部分)以當作 m i要:雷二為了確保避免電磁能量耗損,電感核芯的 ,亦即提高了品質因_值。電感值比習知做法的電感值高 2.針對上述第丨點的另—方面來看,在提供相同電感 的狀況下’本發明提供了—種不增加甚至縮 ^ 電感面積)的電感製作方法,而人接脑+ ^ ^ 趨勢。 4衣杆乃^,而此付合積體電路縮小化的 “3从1避免積體電路縮小化所帶來的相鄰電感互相耦合 ,本發明提供了 —種利用鐵磁性材料作為相鄰 電感耦合干擾之遮蔽屏障的電感製作方法。 4·本發明所提供之高Q值電感的製造方法,其製造製 0503-6151TW ; TSMC2000-0947 ; Jacky.ptd 第10頁 529117 五、發明說明(8) 私簡單,極易與目前的製程相容 f槽時,可臨場(In—Situ)進行,沉^刻第一、二及三 知技術所能達成。 積金屬之方法亦為習 雖然本發明已以較佳實施例揭露如 限制本發明,任何熟習此項技藝I,在不脱非用以 神和範圍β,當可做更動與„,因,離本發明之精 當事後附之申請專利範圍所界定者為準。*明之保護範圍 0503-6151TWF : TSIC2000-0947 ; Jacky.ptd 第11頁0503-6151TW; TSMC2000-0947; Jacky.ptd 529117 V. Description of the invention (7) And in order to ensure the lightning protection magnetic inductance coil, make J inductance value: loss, the depth of the inductor core is higher than Cl f S ^ Λ I is known that the inductance value is high, that is to say, the Q factor of the π mouth quality factor; when the condition of another wind value, the present invention provides a chain surface view to provide the same inductance reduction In addition, in order to prevent the adjacent inductors from the integrated circuit from being reduced in size, an appropriate interference problem is provided. The present invention provides a method using ferromagnetic materials as adjacent lightning. Xianliang Baqian Xi said the method of making inductors with M barriers. Therefore, it ’s too respectful ^ The shielding screen of the electric vehicle ’s port interference is progressive. Therefore, the present invention has practicability and related features [effects and effects of the invention] In summary, the present invention provides at least the following advantages: h = use of ferromagnetic materials such as aluminum-nickel-cobalt alloy, magnetic permeability = branch (That is, the part with the largest magnetic flux) is taken as mi: In order to ensure that electromagnetic energy loss is avoided, the core of the inductor has improved the quality factor value. The inductance value is higher than the conventional value. In view of the other aspect of the above point 丨, under the condition that the same inductance is provided, the present invention provides a method of making an inductor that does not increase or even reduce the inductor area) , While people connect + ^ ^ trend. The 4 clothes rod is ^, and the "3 from 1" to reduce the integration circuit avoids the adjacent inductances caused by the reduction of the integration circuit. The present invention provides a kind of use of ferromagnetic material as the adjacent inductance. Coupling interference shielding barrier manufacturing method 4. The manufacturing method of high-Q inductor provided by the present invention, its manufacturing system 0503-6151TW; TSMC2000-0947; Jacky.ptd Page 10 529117 V. Description of the invention (8) It is simple and easy to be compatible with the current manufacturing process. It can be performed in-situ, and it can be achieved by the first, second, and third knowledge techniques. The method of metal deposition is also a practice. Although the present invention has been It is disclosed in a preferred embodiment that if the present invention is restricted, anyone who is familiar with this technique I can use changes and scope β without departing from the scope of the invention, because it is beyond the scope of the patent application attached to the essence of the invention The ones defined shall prevail. * The protection scope of Ming 0503-6151TWF: TSIC2000-0947; Jacky.ptd Page 11
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