526673 A7 '' ------------------- 五、發明說明（丨） 〔技術領域〕 本發明係關於主要用於半導體晶圓等的加熱之陶瓷加 熱器（半導體晶圓加熱裝置）及構成該陶瓷加熱器(半導體晶 圓加熱裝置)之陶瓷基板所使用的支持銷。 〔背景技術〕 包含蝕刻裝置、化學氣相成長裝置等之半導體製造、 檢查裝置等，以往所採用的加熱器，係使用不銹鋼或鋁合 金等金屬製基材。 然而，金屬製的加熱器，會有溫度控制性差、厚度變 厚而笨重且體積龐大的問題，又對腐蝕性氣體的耐蝕性也 不佳。 相對於此，日本特開平H — 40330號公報等揭示出的 加熱器，係取代金屬製者，而使用氮化鋁等的陶瓷。 〔發明之摘述〕 然而，這種加熱器，係將半導體晶圓等的被加熱物以 接觸陶瓷基板的狀態來載置，陶瓷基板表面的溫度分佈將 反映於半導體晶圓上，而無法對半導體晶圓等作均一地加 熱。 又，爲將半導體晶圓等均一地加熱，若要使陶瓷基板 的表面溫度均一化，必須採取非常複雜的控制，並不容易 控制溫度。 本發明之目的係爲解決上述先前技術所具有的問題點 ，而提供一陶瓷加熱器，特別能在100°C以上的溫度區域 將半導體晶圓等的被加熱物全體作均一地加熱；並提供該 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) tl---------Φ, 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產.局員工消費合作社印製 526673 A7 _ B7 五、發明說明（夂） 陶瓷加熱器所使用之能支持被加熱物之支持銷。 本發明係用於加熱半導體晶圓等的被加熱物之陶瓷加 熱器(加熱裝置）。 第一發明之陶瓷加熱器（半導體晶圓加熱裝置），係具 有在表面或內部形成有發熱體之陶瓷基板，其特徵在於： 將半導體晶圓等的被加熱物以離開陶瓷基板表面的方 式保持住，藉以進行加熱。 第二發明之陶瓷加熱器（半導體晶圓加熱裝置），係具 有在表面或內部形成有發熱體之陶瓷基板，其特徵在於： 是以陶瓷基板的發熱體未形成面、或陶瓷基板的一面 作爲加熱面，並將半導體晶圓等的被加熱物以離開該加熱 面的方式保持住，藉以進行加熱。 上述陶瓷加熱器較佳爲，在陶瓷基板上，形成有爲保 持半導體晶圓等的被加熱物之支持銷插通用的貫通孔，又 較佳爲，將半導體晶圓以離開陶瓷基板表面或加熱面 5〜5000 // m的方式來加熱。 又，上述陶瓷加熱器較佳爲，在陶瓷基板表面形成凸 狀體；因此，係在陶瓷基板上形成貫通孔，將支持銷插入 固定於該貫通孔中，藉以在陶瓷基板表面形成凸狀體；或 是，在陶瓷基板的加熱面形成凹部，將支持銷插入固定於 該凹部中，藉此在陶瓷基板表面形成凸狀體或凸狀部。 凸狀體較佳爲，能和被加熱物呈點接觸之尖塔狀或半 球狀。又支持銷的前端較佳爲尖塔狀或半球狀。 第三發明之支持銷，係將前端部分所形成的接觸部、 4 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) v526673 A7 B7 五、發明說明（今） 該接觸部下方所形成之直徑比接觸部爲大之嵌合部'該嵌 合部下方所形成之直徑比嵌合部爲小之柱狀體、該柱狀體 下端所形成之直徑比柱狀體爲大之固定部，形成爲一體而 構成。 第四發明之支持銷，係將柱狀體和直徑比其大的固定 部形成爲一體而構成。 上述第四發明之支持銷較佳爲，柱狀體的前端呈尖塔 狀或半球狀。 第五發明之陶瓷加熱器，係具有在表面或內部形成有 發熱體之陶瓷基板，並將半導體晶圓等的被加熱物以離開 陶瓷基板表面的方式保持住，藉以進行加熱，其特徵在於 陶瓷基板上形成有直徑互爲不同而相連通之貫通孔， 在該貫通孔中插入第三發明之支持銷，在該貫通孔之相對 上直徑爲大的部分插入並嵌合支持銷的嵌合部，在該支持 銷的固定部和陶瓷基板的底面間嵌入固定用構件。 第六發明之陶瓷加熱器，係具有在表面或內部形成有 發熱體之陶瓷基板，並將半導體晶圓等的被加熱物以離開 陶瓷基板表面的方式保持住，藉以進行加熱，其特徵在於 在陶瓷基板的加熱面側形成凹部，在該凹部插入第四 發明之支持銷，並將固定用彈片在圍繞柱狀體的狀態以抵 接於凹部壁面的方式嵌入。 上述陶瓷加熱器較佳爲，在陶瓷基板內部設有靜電電 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝---------訂---- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 526673 A7 五、發明說明（4) 極。 〔圖式之簡單說明〕 圖1係示意地顯示構成本發明的陶瓷加熱器之陶瓷基 板的俯視圖。 圖2係圖1所示的陶瓷基板之局部放大截面圖。 圖3係不意地顯示構成本發明的陶瓷加熱器之陶瓷基 板的另一例之俯視圖。 圖4(a)、（b)係示意地顯示本發明的支持銷之前視圖。 圖5(a)係示意地顯示構成本發明的陶瓷加熱器之陶瓷 基板的局部放大截面圖；圖5(b)係顯示固定用構件之立體 圖。 圖6(a)係市意地顯不構成本發明的陶瓷加熱器之陶瓷 基板的局部放大截面圖；圖6(b)係示意地顯示支持銷嵌合 於陶瓷基板凹部的樣子之立體圖。 圖7係示意地顯示構成本發明的陶瓷加熱器(靜電夾頭 )之陶瓷基板之局部放大截面圖。 圖8係示意地顯示構成本發明的陶瓷加熱器之陶瓷基 板的局部切開立體圖。 圖9係示意地顯示構成本發明的陶瓷加熱器之陶瓷基 板的局部切開立體圖。 圖10(a)係顯示具有配置於陶瓷基板凹部的半球狀部 分之凸狀體的截面圖，圖10(b)係顯示球狀的凸狀體之截面 圖。 〔符號說明〕 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁)526673 A7 '' ------------------- 5. Description of the Invention (丨) [Technical Field] The present invention relates to ceramic heating mainly used for heating semiconductor wafers and the like. Device (semiconductor wafer heating device) and a support pin used for a ceramic substrate constituting the ceramic heater (semiconductor wafer heating device). [Background Art] Conventionally used heaters, such as semiconductor manufacturing and inspection equipment including etching equipment and chemical vapor growth equipment, use metal substrates such as stainless steel or aluminum alloy. However, metal heaters have the problems of poor temperature control, thick and heavy, bulky, and poor corrosion resistance to corrosive gases. On the other hand, heaters disclosed in Japanese Patent Application Laid-Open No. H-40330 and the like use ceramics such as aluminum nitride instead of metal ones. [Summary of the Invention] However, this type of heater places a heated object such as a semiconductor wafer in contact with a ceramic substrate, and the temperature distribution on the surface of the ceramic substrate is reflected on the semiconductor wafer. Semiconductor wafers and the like are uniformly heated. Further, in order to uniformly heat a semiconductor wafer or the like, if the surface temperature of a ceramic substrate is to be uniformized, very complicated control must be adopted, and it is not easy to control the temperature. The purpose of the present invention is to provide a ceramic heater in order to solve the problems of the above-mentioned prior art, in particular, it can uniformly heat the entire object to be heated, such as a semiconductor wafer, in a temperature range of 100 ° C or more; and provide The 3 paper sizes are in accordance with China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) tl --------- Φ, Intellectual Property of the Ministry of Economic Affairs Bureau employee consumer cooperative prints the intellectual property of the Ministry of Economic Affairs. Bureau employee consumer cooperative prints 526673 A7 _ B7 V. Description of the invention (夂) The ceramic heaters are used to support the heated objects. The present invention is a ceramic heater (heating device) for heating an object to be heated such as a semiconductor wafer. The ceramic heater (semiconductor wafer heating device) of the first invention is a ceramic substrate having a heating element formed on the surface or inside thereof, and is characterized in that: a to-be-heated object such as a semiconductor wafer is held away from the surface of the ceramic substrate To heat. The ceramic heater (semiconductor wafer heating device) of the second invention is a ceramic substrate having a heating element formed on the surface or inside of the ceramic heater, and is characterized in that the non-formed surface of the heating element of the ceramic substrate or the side of the ceramic substrate is used as The heating surface is heated by holding a heated object such as a semiconductor wafer away from the heating surface. The ceramic heater is preferably formed on the ceramic substrate with a through hole commonly used to support a pin for holding a heated object such as a semiconductor wafer, and it is also preferable that the semiconductor wafer be separated from the surface of the ceramic substrate or heated. Surface 5 ~ 5000 // m way to heat. The ceramic heater preferably has a convex body formed on the surface of the ceramic substrate. Therefore, a through hole is formed in the ceramic substrate, and a support pin is inserted and fixed in the through hole to form a convex body on the surface of the ceramic substrate. Or, a concave portion is formed on the heating surface of the ceramic substrate, and a support pin is inserted and fixed in the concave portion, thereby forming a convex body or a convex portion on the surface of the ceramic substrate. The convex body is preferably a spire or hemispherical shape capable of making point contact with the object to be heated. The front end of the support pin is preferably a spire or hemisphere. The support pin of the third invention is the contact part formed by the front part, and the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ----- (Please read the precautions on the back before filling in this page) v526673 A7 B7 V. Description of the invention (today) A fitting part with a larger diameter than the contact part formed under the contact part 'under the fitting part The columnar body having a smaller diameter than the fitting portion formed by the square, and the fixed portion having a larger diameter than the columnar body formed at the lower end of the columnar body are integrally formed. The support pin of the fourth invention is formed by integrally forming a columnar body and a fixing portion having a larger diameter than the columnar body. The support pin of the fourth invention is preferably such that the front end of the columnar body is spire-shaped or hemispherical. The ceramic heater according to the fifth invention is a ceramic heater having a ceramic substrate having a heating element formed on the surface or inside thereof, and holding a heated object such as a semiconductor wafer away from the surface of the ceramic substrate for heating. A through hole having different diameters and communicating with each other is formed on the substrate. A support pin of the third invention is inserted into the through hole, and a fitting portion of the support pin is inserted and fitted in a relatively large diameter portion of the through hole. A fixing member is fitted between the fixing portion of the support pin and the bottom surface of the ceramic substrate. A ceramic heater according to a sixth invention includes a ceramic substrate having a heating element formed on the surface or inside thereof, and is used to heat a heated object such as a semiconductor wafer away from the surface of the ceramic substrate for heating. A recessed portion is formed on the heating surface side of the ceramic substrate, a support pin of the fourth invention is inserted into the recessed portion, and a fixing elastic piece is fitted in a state surrounding the columnar body to abut the wall surface of the recessed portion. The above ceramic heater is preferably provided with electrostatic electricity inside the ceramic substrate. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page). --------- Order ---- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by 526673 A7 V. Description of the Invention (4) Pole. [Brief Description of the Drawings] Fig. 1 is a plan view schematically showing a ceramic substrate constituting a ceramic heater of the present invention. FIG. 2 is a partially enlarged cross-sectional view of the ceramic substrate shown in FIG. 1. FIG. Fig. 3 is a plan view showing another example of the ceramic substrate constituting the ceramic heater of the present invention by accident. 4 (a) and 4 (b) are schematic front views of the support pins of the present invention. Fig. 5 (a) is a partially enlarged sectional view schematically showing a ceramic substrate constituting the ceramic heater of the present invention; and Fig. 5 (b) is a perspective view showing a fixing member. Fig. 6 (a) is a partially enlarged sectional view showing a ceramic substrate that intentionally does not constitute the ceramic heater of the present invention; and Fig. 6 (b) is a perspective view schematically showing a state in which a support pin is fitted into a recessed portion of a ceramic substrate. Fig. 7 is a partially enlarged sectional view schematically showing a ceramic substrate constituting the ceramic heater (electrostatic chuck) of the present invention. Fig. 8 is a partially cutaway perspective view schematically showing a ceramic substrate constituting the ceramic heater of the present invention. Fig. 9 is a partially cutaway perspective view schematically showing a ceramic substrate constituting the ceramic heater of the present invention. Fig. 10 (a) is a cross-sectional view showing a convex body having a hemispherical portion arranged in a concave portion of a ceramic substrate, and Fig. 10 (b) is a cross-sectional view showing a spherical convex body. [Symbols] 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) (Please read the precautions on the back before filling this page)
526673 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（<) 1、 11、81、91…陶瓷基板 lc、11c…有底孔 la、 11a…加熱面 lb、 1 lb…底面 2、 12…電阻發熱體 3…端子銷 4…發熱體層 5…金屬被覆層 6…焊料層 7…昇降銷 8…貫通孔 9…矽晶圓 13…測溫元件 1 5…通孔 16…袋孔 20、30…支持銷 21…接觸部(尖塔部） 22…嵌合部 23…柱狀部 24…固定部 27…構件 31…柱狀體 32…固定部 37…彈片 (請先閱讀背面之注意事項再填寫本頁) 裝 訂----- MT, 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（V) 41…貫通孔 42…凹部 43…靜電電極 81d、91d…凸狀部 〔發明之詳細揭示〕 本發明之陶瓷加熱器之共通特徵，係將半導體晶圓以 離開陶瓷基板表面（加熱面）的方式保持住來進行加熱。因 此，首先對這點作說明，之後才適當的說明上述第一〜第六 發明。 以下的說明中，以半導體晶圓爲被加熱物，舉使用該 半導體晶圓之半導體晶圓加熱裝置爲例來作說明。 本發明之陶瓷加熱器（半導體晶圓加熱裝置），係以和 陶瓷基板呈非接觸狀態來進行半導體晶圓的加熱。 藉由如此般之半導體晶圓和陶瓷基板呈非接觸狀態， 半導體晶圓將不受陶瓷基板表面的溫度分佈之影響，而能 將半導體晶圓全體的溫度均一化。加熱時，陶瓷基板的熱 能藉著空氣的對流和輻射傳達至半導體晶圓。又，由於陶 瓷基板和半導體晶圓不接觸，陶瓷基板所含之Na、B、Y 等的不純物元素、燒結助劑將不致污染半導體晶圓。 當使用表面形成有導體層之陶瓷基板時，係以陶瓷基 板之發熱體未形成面（發熱體形成面之相反側面）爲加熱面 。此乃基於，若形成有發熱體，和發熱體圖案相似的溫度 分佈將形成於半導體晶圓上之故。 又，當發熱體形成於內部時，較佳爲以遠離發熱體者 8 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） .—I----^--------- (請先閱讀背面之注意事項再填寫本頁) 526673 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（rj ) 爲加熱面。此乃基於，隨著熱傳送於陶瓷基板中，將使溫 度變得均一化。 爲了將半導體晶圓以離開陶瓷基板表面（加熱面）的狀 態來加熱，其方法雖沒有特別的限定，但較佳爲第二發明 所記載般，在陶瓷基板上形成爲保持半導體晶圓之凸狀體 或凸狀部。 此乃基於，能用該凸狀體或凸狀部來支持半導體晶圓 ，而以離開加熱面的方式來加熱半導體晶圓。這時可列舉 ，如圖8、9所示般，在陶瓷基板81、91表面形成凸狀部 81d、91d，用該凸狀部81d、91d保持半導體晶圓之方法； 如圖5、7所示般，在陶瓷基板1上形成貫通孔41，在貫 通孔41上插通支持銷20，用該支持銷20來保持半導體晶 圓之方法；如圖6所示般，在陶瓷基板1上形成凹部42， 在此固定支持銷30以保持半導體晶圓，並進行加熱之方法 等等。 凸狀體較佳爲，具有尖塔狀7(參照圖4〜7)或球狀或半 球狀(參照圖1〇)部分者。由於能和被加熱物成點接觸的狀 態之故。如圖10所示般，凸狀體可爲球狀，藉由將該球狀 體埋設於陶瓷基板之凹部，即可和半導體晶圓成點接觸。 圖10(a)顯示具有半球狀的部分之凸狀體50的截面圖，圖! 10(b)顯示球狀的凸狀體60之截面圖。 當在陶瓷基板的加熱面設置凸狀部時，可爲圖8所示: 般之圓錐狀或角錐狀(3角錐、4角錐等)的凸狀部81ci，亦 可爲圖9所示般之形成有環狀突起的凸狀部91d。 9 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公β ^ ^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 526673 A7 _____B7 五、發明說明（3) (請先閱讀背面之注意事項再填寫本頁} 就支持銷而言，如圖2所示般，除能利用矽晶圓之交 接用之昇降銷7外，也能使用圖4(a)、（b)所示之支持銷20 、30 〇 圖4(a)、（b)係示意地顯示支持銷的形狀之前視圖。圖 4(a)所示之支持銷20，係將前端所形成之接觸半導體晶圓 的接觸部21、該接觸部21下方所形成之直徑比接觸部21 爲大之嵌合部22、該嵌合部22下方所形成之直徑比嵌合 部22爲小之柱狀體23、該柱狀體23下端所形成之直徑比 柱狀體23爲大之固定部24，形成爲一體而構成。又接觸 部21較佳爲，尖塔板狀或尖塔柱狀(頂端角錐、下方角柱 的形狀，或頂端角錐、下方圓柱的形狀)之尖塔部，或半球 狀或半球柱狀之半球部。 經濟部智慧財產局員工消費合作社印製 支持銷20，如圖5所示般，係插入陶瓷基板1上所形 成之直徑互爲不同之呈連通的貫通孔41內，將嵌合部22 插入並嵌合於直徑較大的貫通孔41a，另一方面，支持銷 20的固定部24是露出陶瓷基板1的底面lb，在該固定部 24和底面lb間嵌入固定用之C字狀或E字狀之稱作扣環 (snap ring)的構件27而加以固定，以將支持銷20以不致從 基板1脫落的方式確實地固定住。 支持銷20，其前端呈尖塔狀或半球狀，並比陶瓷基板 1的加熱面la更向上突出，故會和陶瓷基板1上所載置的 半導體晶圓形成點接觸，而不致污染半導體晶圓，也不致 在半導體晶圓上產生特異點（接觸部分的溫度高之熱點或溫 度低之冷點）。 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526673 A7 B7 五、發明說明（1) 又，圖4(b)所不之支持銷30，是在前端呈尖塔狀的柱 狀體3 1上將直徑比柱狀體3 1爲大之固定部形成爲一體而 構成者。 該支持銷30，如圖6所示般，在陶瓷基板1上設置凹 部42，在該凹部42插入支持銷30後，將c字狀彈片37 在圍繞柱狀體31的狀態以抵接於凹部81壁面的方式嵌入 來作固定。C字狀彈片37，由於如圖6(b)所示般會向外側 擴開，若插入凹部42中，將抵接於凹部42的內壁而固定 住。另一方面，支持銷30的固定部32，由於被c字狀的 彈片37壓緊，故能將支持銷30確實地固定在凹部42內。 支持銷，可在中心部分形成1個，及/或在同心圓周狀 之線對稱或點對稱的位置形成複數個。 又，支持銷的個數，在直徑300mm以下的陶瓷基板 上，較佳爲形成1〜1 〇個。 在陶瓷基板1的加熱面la之相反側面(底面）ib上形 成電阻發熱體2時，由於在加熱面la設置凹部42，故能 提高圖案的自由度，又由於該凹部42並非貫通孔，故彈片 不會鬆脫而不致造成支持銷30的脫落。 又，支持銷30之柱狀體的前端較佳爲尖塔狀，其乃 基於和支持銷A同樣的理由。 C字狀的構件27和彈片37，較佳爲金屬製，特別是 不銹鋼、Ni合金製等不易生銹者。又，支持銷2〇、30，較 佳爲陶瓷製，更佳爲氧化鋁、二氧化矽等的氧化物陶瓷。 此乃基於熱傳導率低，而不易產生冷點、熱點等。 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公S ) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--- MT, 經濟部智慧財產局員工消費合作社印製 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（γ) 使用C字狀的構件27和彈片37之固定方法，不同於 使用接著材等的固定方法，由於是物理性的固定方法，該 等構件27和彈片37將不致因熱等而產生劣化。 貫通孔及凹部的直徑較佳爲1〜l〇〇mm，更佳爲 2〜10mm。此乃基於若過大將會產生冷點之故。 本發明中較佳爲，使半導體晶圓離開陶瓷基板的表面 或加熱面5〜5000 // m、更佳爲5〜500 //m。若未達5//m， 會受陶瓷基板溫度分佈的影響而使半導體晶圓的溫度變得 不均一，若超過5000 //m，半導體晶圓的溫度變得不易上 昇，結果半導體晶圓的溫度差變大。 特別是最佳爲，使半導體晶圓離開陶瓷基板的表面或 加熱面20〜200 // m。 本發明之陶瓷加熱器，如圖7所示般，可在陶瓷基板 1的內部形成靜電電極43。藉由靜電電極43之吸引矽晶圓 9等的半導體晶圓，能使半導體晶圓的板彎集中於一方向 ，而將加熱面la和半導體晶圓的距離不均縮小。其結果， 可使半導體晶圓的溫度更加均一化。 本發明之陶瓷基板含有碳，其含量較佳爲 200〜5000PPm。如此即可遮蔽電極，並變得較易利用黑體 輻射。 本發明之陶瓷基板較佳爲直徑150mm以上，以直徑 200mm以上最適合。此乃基於，有這麼大直徑的基板，加 熱面的溫度易變得不均一，而易在半導體晶圓上產生溫度 差之故。 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' ----------—裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（丨\) 本發明之陶瓷基板較佳爲使用於100°C以上，更佳爲 200°C以上。此乃基於，加熱面的溫度易變得不均一，而易 在半導體晶圓上產生溫度差之故。 本發明之構成半導體裝置用陶瓷基板之陶瓷材料並沒 有特別的限定，例如可列舉氮化物陶瓷、碳化物陶瓷、氧 化物陶瓷等。 作爲氮化物陶瓷，可列舉金屬氮化物陶瓷，例如氮化 鋁、氮化矽、氮化硼、氮化鈦等。 作爲碳化物陶瓷，可列舉金屬碳化物陶瓷，例如碳化 矽、碳化鉻、碳化鈦、碳化钽、碳化鎢等。 作爲氧化物陶瓷，可列舉金屬氧化物陶瓷，例如氧化 鋁、氧化鍩、堇青石、模來石等的金屬氧化物陶瓷。 這些陶瓷可單獨使用，亦可倂用2種以上。 這些陶瓷中，一般而言，由於氮化物陶瓷、碳化物陶 瓷的熱傳導率高，故比氧化物陶瓷爲佳。 又，氮化物陶瓷中以氮化鋁爲最佳，由於其熱傳導率 爲最高之180W/m · K之故。 本發明較佳爲，在陶瓷基板中含有燒結助劑。該燒結 助劑，可使用鹼金屬氧化物、鹼土類金屬氧化物、稀土類 氧化物，這些燒結助劑中，特別是以CaO、Y203、Na20、 Li2〇、Rb20爲佳。此等的含量較佳爲0.1〜10重量％。 上述陶瓷基板較佳爲，根據JIS Z 8721規定其明度値 爲N4 .以下者，此乃基於，具有該明度程度者，其輻射熱 量、遮蔽性的表現良好。 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 526673 經濟部智慧財產局員工消費合作社印刹衣 A7 B7 五、發明說明（π) 在此，明度之N，是取理想黑的明度爲〇 ’理想白的 明度爲10，在黑明度和白明度之間’以色明度的感覺成等 間隔的方式將各色分割成10等份’用NO〜N10的記號來表 示者。 又，實際測定時，是和對應於N0〜N10的色卡進行比 較。這時小數點第1位爲〇或5。 本發明之陶瓷基板的表面或內部所設之發熱體’較佳 爲金屬、導電性陶瓷。作爲金屬，較佳爲例如貴金屬(金、 銀、鉛、iE )、錯、鎮、銷、鎮等。作爲導電性陶瓷’例如 可列舉鎢、鉬的碳化物。其等可單獨使用或倂用2種以上 〇 圖1係顯示構成本發明的陶瓷加熱器之陶瓷基板的俯 視圖，圖2係其局部放大截面圖。 陶瓷基板1是形成圓板狀，電阻發熱體2，爲了使陶 瓷基板1的加熱面la的溫度成爲全體均一，是在陶瓷基板 1的底面形成伺心圓狀的圖案。又，電阻發熱體2，係由發 熱體層4和其表面所形成之金屬被覆層5所構成。 這些電阻發熱體2，是以互相靠近之雙重的同心圓爲 一組，並以成爲1根線的方式來作連接，在其兩端，透過 焊料層6來連接構成輸出入端子之端子銷3。又，在陶瓷 基板1之接近中央的部分，形成有爲插入昇降銷7之貫通 孔8，又在底面上，形成有爲插入測溫元件之有底孔lc。 如圖2所示般，該昇降銷7，係將矽晶圓9載置於上 方以使其上下移動，藉此，以將矽晶圓9移送至未圖示之 14 ------------.— (請先閱讀背面之注意事項再填寫本頁) 訂---- 華 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526673 A7 B7 五、發明說明（0) 搬送機，或接收來自搬送機之矽晶圓9。本發明較佳爲’ 在昇降銷7上接收矽晶圓9後，降下昇降銷7，將矽晶圓9 保持成離開陶瓷基板1表面5〜5000 //m，再進行加熱。加 熱較佳爲在150°C以上進行。 圖3係示意地顯示將電阻發熱體埋設於內部之陶瓷基 板的截面圖。 這時，電阻發熱體12，通常在陶瓷基板11的內部， 係成於比中心更靠近底面的部分，也能形成在比中心更偏 向加熱面11a的位置。又，在電阻發熱體12的端部之正下 方，形成有通孔15，在該通孔15下方形成袋孔16而使通 孔15露出，在露出後的通孔15上連接導線(未圖示)等， 藉以對電阻發熱體12來通電。 其次，說明本發明之上述陶瓷加熱器的製造方法之一 例。 (1) 首先，混合陶瓷粉末、結合劑、燒結助劑等。待混 合之粉末，平均粒徑較佳爲小到0.1〜5/zm左右。此乃基於 ，雖越微細其燒結性會越好，但若過於微細，生板片的體 積密度會變小，燒結收縮的程度會變大，而會有尺寸精度 變差的情形。 又，在製造氮化鋁基板等的情形，在上述混合物中添 加氧化釔(Y2〇3)等燒結助劑亦可。 (2) 接著，將所得的粉末混合物放入成型模內而得之成 形體，或將上述生板片的積層體（皆爲假燒成者），在氬、 氮等非活性環境氣氛下以1700〜1900°C、8〜20MPa的條件 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 」各、一 0 ί ϋ ammt ϋ ϋ i_i— —ϋ Μ ^ I i memmt —ϋ Μίν=口 S, 經濟部智慧財產局員工消費合作社印製 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（\4r) 加熱、加壓來實施燒結。 陶瓷基板，基本上可將陶瓷粉末的混合物構成之成形 體或生板片積層體施以燒成來製造出，但在將陶瓷粉末的 混合物放入成形模中時，或將構成發熱體之金屬板（箔）或 金屬線寺埋沒於粉末混合物中，或在待積層的生板片中之 1片生板片上形成構成發熱體用之導體糊層，藉此即可得 出內部具有電阻發熱體之陶瓷基板。 又，製造出燒結體後，在其表面（底面）形成導體糊層 ，藉由進行燒成，而在底面形成發熱體亦可。 製作發熱體用的導體糊並沒有特別的限定，除了要確 保導體電而含有金屬粒子或導電性陶瓷外，較佳爲含有樹 脂、溶劑、增粘劑等。 作爲金屬粒子，較佳爲例如貴金屬（金 '銀、鉑、鈀) 、鉛、鎢、鉬、鎳等。其等可單獨使用或倂用2種以上。 此乃基於，這些金屬較不易氧化，在成爲薄膜狀的電極等 時具有充分大的導電性，另一方面，成爲圖1所示般的線 狀（帶狀）電阻發熱體的情形，會具有發熱所需之充分的電 阻値。 作爲導電性陶瓷，例如可列舉鎢、鉬的碳化物等。這 些可單獨使用或倂用2種以上。 這些金屬粒子或導電性陶瓷粒子的粒徑較佳爲 0.1〜100/zm，此乃基於，若未達0.1# m而過於微細，將容 易被氧化，另一方面，若超過100/zm，將不易燒結，而使 電阻値變大。 16 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 24先閱讀背面之注音？事項再填寫本頁) 裝--------訂------ ΆΨ. 526673 A7 B7 五、發明說明（\<) 金屬粒子的形狀可爲球狀或鱗片狀。使用這些金屬粒 子時，也能是球狀物和鱗片狀物的混合物。 當金屬粒子爲鱗片狀物、或球狀物和鱗片狀物的混合 物時，由於金屬粒子間的金屬氧化物變得易保持，發熱體 和陶瓷基板間的密著性更確實，且能增大電阻値，因此是 有利的。 導體糊所使用的樹脂，例如可列舉環氧樹脂、酚樹脂 等。又作爲溶劑，例如可列舉異丙醇等。作爲增粘劑，可 列舉纖維素等。 要將發熱體用的導體糊形成於陶瓷基板表面時較佳爲 ，在導體糊中除金屬粒子外另添加金屬氧化物，藉以成爲 金屬粒子及金屬氧化物所燒結成者。如此般，藉由將金屬 氧化物和金屬粒子一起燒結，即可使陶瓷基板和金屬粒子 變得密著。 藉由混合金屬氧化物來改善和陶瓷基板的密著性之理 由雖不明確，但可考慮成，金屬粒子表面和非氧化物構成 的陶瓷基板等的表面，係稍被氧化而形成氧化膜，氧化膜 彼此係透過金屬氧化物進行燒結而成爲一體化，而使金屬 粒子和陶瓷的密著變得更確實。又，構成陶瓷基板的陶瓷 爲氧化物時，當然其表面是氧化物所構成，故能形成密著 性優異的導體層。 就上述金屬氧化物而言，較佳爲擇自氧化鉛、氧化鋅 、二氧化矽、氧化硼（B2〇3)、氧化鋁、三氧化二釔及二氧 化鈦所構成群中之至少1種。 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ▼裝 (請先閱讀背面之注意事項再填寫本頁) --訂-----1 華 經濟部智慧財產局員工消費合作社印製 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（士） 此乃基於，這些氧化物，不致增大發熱體的電阻値， 但能改善金屬粒子和陶瓷基板的密著性之故。 上述氧化鉛、氧化鋅、二氧化矽、氧化硼（B2〇3)、氧 化鋁、三氧化二釔及二氧化鈦的比例，當金屬氧化物的全 量爲100重量份時，較佳爲調整成：重量比下，氧化鉛 1〜10、二氧化砂1〜30、氧化硼5〜50、氧化鋅20〜70、氧化 鋁1〜10、三氧化二釔1〜50、二氧化鈦1〜50，且合計不超 過100重量份。 藉由以上述範圍來調整這些氧化物的量，特別是能改 善和陶瓷基板的密著性。 金屬氧化物相對於金屬粒子的添加量，較佳爲0.1重 量％〜10重量％。使用上述構成的導體糊來形成發熱體時的 面積電阻率較佳爲1〜1〇〇〇ηιΩ/Ε]。 此乃基於，若面積電阻率超過ΙΟΟΟιηΩ/□，相對施加 電壓量之發熱量變得過小，針對表面設有發熱體之陶瓷基 板，將不容易控制其發熱量。 當發熱體是形成於陶瓷基板的表面時，較佳爲在發熱 體的表面部分形成金屬被覆層。如此即可防止內部的金屬 燒結體被氧化而產生電阻値的改變。所形成的金屬被覆層 厚度較佳爲0.1〜10#m。 形成金屬被覆層時所使用的金屬，只要是非氧化性的 金屬即可，並沒有特別的限定，具體而言可列舉金、銀、 鈀、鉑、鎳等等。這些可單獨使用或倂用至少2種。其中 以鎳爲較佳。 18 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公' — — (請先閱讀背面之注意事項再填寫本頁) tr--------- 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（q) 又，將發熱體形成於陶瓷基板的內部時，由於發熱體 表面不致被氧化，被覆是不需要的。 接著，在設有電阻發熱體之陶瓷基板上，設置爲插入 支持銷之貫通孔或凹部，在其中插入支持銷，並連接外部 端子等，再視需要來設置有底孔，在其內部埋設熱電偶。 將如此般所得之陶瓷基板設置於支持容器等，將來自 電阻發熱體和測溫元件的配線連接於控制裝置等，如此即 完成半導體晶圓加熱裝置(陶瓷加熱器)的製造。 又，用陶瓷基板上所形成的凸狀體等來將半導體晶圓 以和陶瓷基板間形成5〜500 //m的空間的方式加以保持， 並在150°C以上進行加熱，以對半導體晶圓施加各種處理 〇 〔用以實施本發明之最佳形態〕 (實施例1)陶瓷加熱器的製造 (1) 將氮化鋁粉末(德山公司製，平均粒徑l.l/zm)100重量 份、氧化i乙(Y2O3，平均粒徑〇.4//m)4重量份、丙烯酸系 結合劑10重量份混合，置入成形模中，於氮環境氣氛中， 在1890°C、壓力15MPa的條件下實施3小時熱壓，得出 氮化鋁燒結體。 接著，從該燒結體切出直徑210mm的圓板體以作爲陶 瓷基板1，在該陶瓷基板1上的3處以鑽孔加工來形成直 徑10mm的貫通孔8。 (2) 在上述（1)所得之陶瓷基板1底面lb上，以網版印刷法 來印刷導體糊。印刷圖案是採用圖1所示的同心圓狀圖案 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） —-----訂·-------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 526673 A7 __ B7 五、發明說明（\ 8) 〇 作爲導體糊，係使用印刷電路板的通孔形成用之德力 化學硏究所製的索魯貝斯特PS603D。 該導體糊爲銀-鉛糊劑，相對於銀100重量份’係含 有由氧化鉛（5重量％)、氧化鋅（55重量％)、二氧化矽（1〇 重量％)、氧化硼(25重量％)及氧化鋁（5重量％)所構成之金 屬氧化物7·5重量份。又銀粒子爲平均粒徑4.5/zm、呈鱗 片狀者。 (3) 接著，將印刷有導體糊之燒結體於780°C進行加熱燒成 ，以將導體糊中的銀、鉛燒結同時燒在燒結體上，而形成 發熱體4。銀-鉛發熱體4之厚度爲5//m、寬度爲2.4mm 、面積電阻率爲7.7πιΩ/Ε]。 (4) 在硫酸鎳80g/l、次磷酸鈉24g/l、醋酸鈉12g/：l、硼酸 8g/l、氯化銨6g/l之水溶液所構成的化學鍍浴中，浸入完 成上述處理的陶瓷基板1，以在銀-鉛發熱體4的表面析 出厚度l^zm的金屬被覆層5(鎳層），而得出電阻發熱體2 〇 (5) 在用以連接電源之端子的安裝部分，以網版印刷法印刷 銀-鉛焊料糊（田中貴金屬公司製)以形成焊料層。 接著，將柯伐合金製的端子銷3載置於焊料層6上， 於420°C加熱以進行熔焊，以將端子銷3裝設於發熱體2 表面。 (6) 將溫度控制用的熱電偶嵌入有底孔內，塡入聚醯亞胺樹 脂，以190°C硬化2小時，將該陶瓷(參照圖1、2)設於支 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（q) 持容器後，進行配線連接等，藉此來得出陶瓷加熱器。 接著’在陶瓷基板1的貫通孔8上插通昇降銷7，在 該昇降銷7上載置政晶圓9，慢慢降下昇降銷7而使砂晶 圓和陶瓷基板的距離成爲l〇〇//m。 又，以電阻發熱體2之未形成側作爲加熱面la。 又，將陶瓷基板2昇溫至600°C爲止，用熱觀測器（曰 本DATUM公司製，IR162012-0012)來測定矽晶圓9的最 高溫度和最低溫度。 矽晶圓的最高溫度爲600°C，最低溫度爲595°C，最 高溫和最低溫的差爲5°C。 使用螢光X射線分析裝置(Rigaku公司製RIX2100)來 確認矽晶圓有無受到Y的污染，結果沒有污染的情形。 (實施例2)內部具有發熱體之陶瓷加熱器（圖3)的製造 (1) 將氮化鋁粉末(德山公司製，平均粒徑重量 份、三氧化二釔(平均粒徑0.4//m)4重量份、丙烯酸系樹 脂結合劑Π.5重量份、分散劑0.5重量份、丙烯酸系結合 劑0.2重量份、1 - 丁醇和乙醇所構成的醇類53重量份混 合成糊劑，用刮刀法進行成形，製作出厚〇.47mm之生薄 (2) 接著，將該生薄片以80°C乾燥5小時後，鑽孔出爲插入 直徑5mm的昇降銷之貫通孔8構成部分、爲連接端子銷之 通孔15構成部分。 (3) 將平均粒徑l//m的碳化鎢粒子100重量份、丙燦酸系 結合劑3.0重量份、α -萜品醇溶劑3·5重量份及分散劑 21 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526673 經濟部智慧財產局員工消費合作社印制衣 A7 B7 五、發明說明（w) 0.3重量份加以混合，調製成導體糊A。 將平均粒徑3//m的碳化鎢粒子100重量份、丙烯酸 系結合劑1.9重量份、α -萜品醇溶劑3.7重量份及分散 劑0.2重量份加以混合，調製成導體糊Β。 以網版印刷法將導體糊Α印刷在生薄片上’以形成導 體糊層。印刷圖案係採同心圓圖案。 又，將導體糊B充塡於爲連接端子銷之通孔用貫通孔 〇 在完成上述處理後之生薄片上側（加熱面）、下側，分 別重疊未印刷鎢糊之生薄片37片、13片後，以13(TC、 8MPa的壓力進行積層。 (4) 接著，將生所的積層體，於氮氣中以60(TC脫脂5小時 ，以1890°C、壓力l5MPa熱壓3小時，得出厚度3mm的 氮化鋁板狀體。切出230mm的圓板狀後，即製作出內部具 有厚6// m、寬10mm的發熱體之陶瓷基板11。 (5) 接著，將(4)所得之陶瓷基板11用鑽石磨石硏磨後，載 置上遮罩，藉由SiC等的噴砂處理以在表面設置熱電偶用 的有底孔11c(直徑1.2mm、深度2.0mm)。 (6) 接著，挖去通孔用貫通孔的一部分來形成袋孔16後， 使用Ni- Au構成的金蠟，於700°C進行加熱熔焊，以在該 袋孔16接上柯伐合金製的外部端子銷(未圖示）。 外部端子銷的連接，以鎢支持體是形成3點支撐的構 造爲佳。如此將能確保連接可靠性。 (乃將溫度控制用之複數個熱電偶埋設於有底孔，將該陶瓷 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) π裝--------訂------ §· 526673 經濟部智慧財產局員工消費合作社印制衣 A7 B7 五、發明說明（τ\ ) 基板(參照圖3)設置於支持容器後，進行配線連接等’藉此 來得出陶瓷加熱器。 (8)接著，在陶瓷基板Π的貫通孔8內插通昇降銷7，用該 昇降銷7支持矽晶圓9，慢慢降下昇降銷7而使矽晶圓和 陶瓷基板的距離成爲150//m。又，以遠離發熱體2之側面 作爲加熱面la。 又，將陶瓷基板2昇溫至600°C爲止，用熱觀測器（曰 本DATUM公司製，IR162012-0012)來測定半導體晶圓的 最高溫度和最低溫度。 半導體晶圓的最高溫度爲600°C，最低溫度爲595°C ，最高溫和最低溫的差爲。 使用螢光X射線分析裝置(Rigaku公司製RIX2100)來 確認矽晶圓有無受到Y的污染，結果沒有污染的情形。 (實施例3)具備支持銷20之陶瓷基板的製造 基本上雖和實施例1相同，但設置在陶瓷基板的加熱 面側之直徑爲5mm、其相反側的直徑爲3mm之連通的貫 通孔41(參照圖5)，在此處，嵌入圖4(a)所示的形狀之氧 化鋁製支持銷30。該支持銷30的構成，其嵌合部22的直 徑爲約5mm，固定部24的直徑爲3mm，長度約6.1mm， 且其固定部24是露出陶瓷基板1的底面lb。在該固定部 24和陶瓷基板的底面(加熱面的相反面）lb間嵌入不銹鋼製 之C字狀構件27(參照圖5(b))來作固定。 該支持銷20是從晶圓加熱面la突出100//m。 (實施例4)具備支持銷30之陶瓷基板的製造 23 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 526673 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明 基本上雖和實施例1相同，但在陶瓷基板1的加熱面 側，設置直徑3mm、深2mm的凹部42，在此處，嵌入圖 4(b)所示的形狀之氧化鋁製支持銷30。該支持銷30，其柱 狀部31的直徑約2mm ’固疋部32的直徑3mm，長度約 3.1mm。且其固定部24是露出陶瓷基板1的底面lb。在凹 部42嵌入不銹鋼製之C字狀彈片37，以固定住支持銷30 〇 該支持銷2 〇是從晶圓加熱面1 a突出10 0 v m。 (實施例5)具有凸狀部之陶瓷基板的製造 基本上雖和實施例1相同，但藉由熱壓來在表面設置 圖8般之圓錐狀凸狀部81d。凸狀部81d之局度約40#!^ 〇 (實施例6)帶靜電夾頭的加熱器之製造 基本上雖和實施例2相同，但將導電糊A以網版印刷 法印刷於生薄片上來形成導體糊層時，除同心圓狀的發熱 體圖案外，另外還印刷生薄片雙極的靜電夾頭圖案。 又，和實施例3的情形同樣的在陶瓷基板1上設置貫 通孔41，將支持銷20插入貫通孔41後，用構件27加以 固疋’得出圖7所不的構造之陶瓷基板。將支持銷2 0調整 成從加熱面la突出300//m。 以上，對實施例1〜6的陶瓷加熱器，用熱觀測器（日 本DATUM公司製，IR162〇12-0012)來測定矽晶圓的溫度 ’求取最商溫度和最低溫度。又使用螢光X射線分析裝置 (Rigaku公司製RIX2100)來確認矽晶圓有無受到γ的污染 24 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^w* --------訂------— (請先閱讀背面之注意事項再填寫本頁) 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（y?) ，結果顯示於下述表1。 (實施例7)SiC製加熱板(hot plate) (1) 將碳化矽粉末（屋久島電工公司製，Diasic GC - 15，平 均粒徑1·1 # m) 100重量份、碳4重量份、丙烯酸系樹脂結 合劑I2重量份、B*C 5重量份、分散劑0.5重量份、1 — 丁 醇和乙醇所構成的醇類所組合成之組成物，進行噴乾來製 作出顆粒狀的粉末。 (2) 將該粉末置入模具中，成形爲平板狀而得出生成形體。 (3) 將完成加工處理後的生成形體，以溫度1900°C、壓力 20MPa的條件熱壓，得出厚3mm的碳化矽燒結體。 (4) 對該碳化矽燒結體，在氮氣中，於1600°C實施3小時的 退火處理，之後，從該板狀體切出直徑21〇mm的圓板體， 而得出陶瓷製的板狀體(陶瓷基板Π)。 之後，在表面塗佈玻璃糊(昭榮化學工業公司製，G- 5270) ，以600°C進行加熱、熔融，以在表面形成厚度2//m的 Si02 層。 接著，對該陶瓷基板施以鑽孔加工及切削構件之加工，以 形成爲插入昇降銷之貫通孔15、爲插入矽晶圓支持用的昇 降銷之貫通孔、爲埋設熱電偶之有底孔14(直徑 深度2mm)。然後，在用以加熱矽晶圓之加熱面側，於中心 點形成1個凹部’並於同心圓周上等間隔的形成3個凹部 〇 (5) 在上述(3)所得之燒結體底面上’以網版印刷法來印刷導 體糊。印刷圖案是採用圖1所示的同心圓狀圖案。 25 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） AW ^--------訂---------^^1 (請先閱讀背面之注意事項再填寫本頁) 526673 經濟部智慧財產局員工消費合作社印制衣 Α7 Β7 五、發明說明（次） 作爲導體糊，係使用印刷電路板的通孔形成用之德力化學 硏究所製的索魯貝斯特PS603D。 該導體糊爲銀-給糊劑’相對於銀100重量份，係含有由 氧化鉛（5重里/。）、氧化鉢（55重量％)、二氧化砂（1〇重量 %)、氧化硼(25重量％)及氧化鋁（5重量所構成之金屬氧 化物7.5重量份。又銀粒子爲平均粒徑4.5//m、呈鱗片狀 者。 (6) 接著，將印刷有導體糊之燒結體於780°C進行加熱燒成 ，以將導體糊中的銀、鉛燒結同時燒在燒結體上，而形成 電阻發熱體12。銀-鉛電阻發熱體12之厚度爲5//m、寬 度爲2.4mm、面積電阻率爲7.7mQ/〇。 (7) 接著，在表面上再塗佈前述玻璃糊，以600°C的燒成來 在表面施加玻璃塗層。 最後在中心部及其周圍的3個凹部，嵌入用以支持晶圓之 氧化鋁球體。 (比較例1) 雖和實施例1相同，但讓矽晶圓和陶瓷基板接觸，並 實施同樣的測定。矽晶圓的最高溫度爲605°C，最低溫度 爲595°C，最高溫和最低溫的差値爲10°C。又，使用螢光 X射線分析裝置(Rigaku公司製RIX2100)來確認矽晶圓有 無受到Y的污染，結果在矽晶圓的裏面發現Y之若干擴散 〇 (試驗例1) 雖和實施例1相同，但將矽晶圓和陶瓷基板的距離定 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公ίΤ (請先閱讀背面之注意事項再填寫本頁) 裝 n ·1 1>1 1·--^a* a···· iw * a····* *ι·ηι I ι 兮口 526673 A7 B7 五、發明說明（六） 爲3 // m，並實施同樣的測定。矽晶圓的最高溫度爲605°C ，最低溫度爲595°C，最高溫和最低溫的差値爲l〇t：。又 ，使用螢光X射線分析裝置(Rigaku公司製RIX2100)來確 認矽晶圓有無受到Y的污染，結果沒有污染的情形。 (試驗例2) 雖和實施例1相同，但將矽晶圓和陶瓷基板的距離定 爲510/2 m，並實施同樣的測定。矽晶圓的最高溫度爲597 °C，最低溫度爲594°C。雖將陶瓷基板昇溫至600°C，但矽 晶圓的溫度稍低。以熱觀測器來觀察陶瓷基板時，最高溫 度爲605°C，最低溫度爲595°C，最高溫和最低溫的差値爲 l〇°C。又，使用螢光X射線分析裝置（Rigaku公司製 RIX2100)來確認矽晶圓有無受到γ的污染，結果沒有污染 的情形。 (試驗例3) 雖和實施例1相同，但將矽晶圓和陶瓷基板的距離定 爲5 100 /z m，並實施同樣的測定。矽晶圓的最高溫度爲 410t，最低溫度爲400°C，最高溫和最低溫的差値爲l〇°C 。雖將陶瓷基板昇溫至600°C，但無法充分地提昇矽晶圓 的溫度。以熱觀測益來観察陶瓷基板時’取局溫度爲6 0 5 °C，最低溫度爲595°C，最高溫和最低溫的差値爲l〇°C。 又，使用螢光X射線分析裝置(Rigaku公司製RIX2100)來 確認矽晶圓有無受到Y的污染，結果沒有污染的情形。 以上之實施例、比較例、試驗例的結果記載於表1。 又實施例7中，離間距離爲50^m，最高溫度600°c 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝526673 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs <) 1, 11, 81, 91 ... ceramic substrates lc, 11c ... bottomed holes la, 11a ... heating surface lb, 1 lb ... bottom surface 2, 12 ... resistance heating element 3 ... terminal pin 4 ... heating element layer 5 ... metal Coating layer 6 ... Solder layer 7 ... Lifting pin 8 ... Through hole 9 ... Silicon wafer 13 ... Temperature measuring element 1 5 ... Through hole 16 ... Pocket hole 20, 30 ... Support pin 21 ... Contact portion (spire portion) 22 ... Embed Joining section 23 ... Columnar section 24 ... Fixing section 27 ... Member 31 ... Columnar body 32 ... Fixing section 37 ... Elastomer (Please read the precautions on the back before filling this page) Binding ----- MT, this paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 526673 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (V) 41 ... through hole 42 ... recess 43 ... static electrodes 81d, 91d ... convex section [detailed disclosure of the invention] A common feature of the ceramic heater of the present invention is that the semiconductor wafer is held away from the ceramic substrate surface (heating surface) for heating. Therefore, this point will be explained first, and then the first to sixth inventions described above will be appropriately described. In the following description, a semiconductor wafer is used as an object to be heated, and a semiconductor wafer heating device using the semiconductor wafer will be described as an example. The ceramic heater (semiconductor wafer heating device) of the present invention heats a semiconductor wafer in a non-contact state with a ceramic substrate. With such a non-contact state between the semiconductor wafer and the ceramic substrate, the semiconductor wafer is not affected by the temperature distribution on the surface of the ceramic substrate, and the temperature of the entire semiconductor wafer can be uniformized. During heating, the thermal energy of the ceramic substrate is transferred to the semiconductor wafer by air convection and radiation. In addition, since the ceramic substrate and the semiconductor wafer are not in contact, the impurity elements such as Na, B, and Y contained in the ceramic substrate and the sintering aid will not contaminate the semiconductor wafer. When a ceramic substrate with a conductor layer formed on the surface is used, the non-formed surface of the heating element of the ceramic substrate (the side opposite to the surface on which the heating element is formed) is used as the heating surface. This is based on the fact that if a heating element is formed, a temperature distribution similar to the pattern of the heating element will be formed on the semiconductor wafer. In addition, when the heating element is formed inside, it is preferable to apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) to the paper sheet size of 8 sheets away from the heating element. —I ---- ^ ---- ----- (Please read the precautions on the back before filling out this page) 526673 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau of the Ministry of Economic Affairs 5. The invention description (rj) is a heating surface. This is based on the fact that as the heat is transmitted through the ceramic substrate, the temperature becomes uniform. Although the method is not particularly limited in order to heat the semiconductor wafer away from the surface (heating surface) of the ceramic substrate, it is preferably formed on the ceramic substrate so as to hold the convexity of the semiconductor wafer as described in the second invention. Body or convex part. This is based on that the semiconductor wafer can be supported by the convex body or the convex portion, and the semiconductor wafer can be heated away from the heating surface. In this case, as shown in FIGS. 8 and 9, a method of forming convex portions 81 d and 91 d on the surfaces of the ceramic substrates 81 and 91 and holding the semiconductor wafer by the convex portions 81 d and 91 d is shown in FIGS. 5 and 7. Generally, a method of forming a through-hole 41 in the ceramic substrate 1, inserting a support pin 20 into the through-hole 41, and using the support pin 20 to hold a semiconductor wafer; as shown in FIG. 6, a recess is formed in the ceramic substrate 1. 42. Here, the support pin 30 is fixed to hold the semiconductor wafer, and a method of heating is performed. The convex body preferably has a spire shape 7 (see Figs. 4 to 7) or a spherical or hemispherical shape (see Fig. 10). It can be in point contact with the object to be heated. As shown in FIG. 10, the convex body may be spherical. By embedding the spherical body in a recessed portion of the ceramic substrate, it is possible to make point contact with the semiconductor wafer. Fig. 10 (a) shows a cross-sectional view of a convex body 50 having a hemispherical portion, and Fig. 10 (b) shows a cross-sectional view of a spherical convex body 60. When the convex portion is provided on the heating surface of the ceramic substrate, it may be as shown in FIG. 8: the convex portion 81ci of a general conical shape or a pyramid shape (such as a 3-pyramid, a 4-pyramid, etc.) may be as shown in FIG. A convex portion 91d having an annular protrusion is formed. 9 This paper size applies to Chinese national standard (CNS> A4 specification (210 X 297 male β ^ ^ -------- ^ --------- (Please read the precautions on the back before filling in this Page) 526673 A7 _____B7 V. Description of the invention (3) (Please read the precautions on the back before filling out this page} As far as support pins are concerned, as shown in Figure 2, the lift pins for silicon wafer transfer can be used In addition, the support pins 20 and 30 shown in Figs. 4 (a) and (b) can also be used. Figs. 4 (a) and (b) are schematic front views showing the shape of the support pins. The support pin 20 shown is formed by contacting the semiconductor wafer contact portion 21 formed at the front end, and a fitting portion 22 having a larger diameter than the contact portion 21 formed below the contact portion 21 and formed below the fitting portion 22 The columnar body 23 having a smaller diameter than the fitting portion 22, and the fixed portion 24 having a larger diameter than the columnar body 23 formed at the lower end of the columnar body 23 are integrally formed. The contact portion 21 is preferably , A steeple plate or a steeple column (the shape of a top pyramid, a lower corner column, or a top pyramid, a lower column shape), or a hemispherical or hemispherical columnar hemisphere The support pin 20 is printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As shown in FIG. 5, the support pin 20 is inserted into the through-hole 41 having different diameters formed on the ceramic substrate 1. It fits into the through-hole 41a with a large diameter. On the other hand, the fixing portion 24 of the support pin 20 exposes the bottom surface lb of the ceramic substrate 1, and a C-shaped or E-shape for fixing is inserted between the fixing portion 24 and the bottom surface lb. A member 27 called a snap ring is fixed to securely support the support pin 20 so as not to fall off the substrate 1. The support pin 20 has a spire or hemispherical shape at the front end, and The heating surface 1a of the ceramic substrate 1 protrudes further upward, so that it will make point contact with the semiconductor wafer placed on the ceramic substrate 1 without contaminating the semiconductor wafer or causing specific points on the semiconductor wafer. Hot spot with high temperature or cold spot with low temperature). 10 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 526673 A7 B7 5. Description of the invention (1) and Figure 4 (b) No support pin 30 is pointed at the front end The columnar body 31 is formed by integrally forming a fixing portion having a larger diameter than the columnar body 31. The support pin 30 is provided with a recessed portion 42 on the ceramic substrate 1 as shown in FIG. After the concave portion 42 is inserted into the support pin 30, the c-shaped elastic piece 37 is fitted and fixed while abutting on the wall surface of the concave portion 81 while surrounding the columnar body 31. The C-shaped elastic piece 37 is shown in FIG. 6 (b). It will expand outward as shown, and if inserted into the recessed portion 42, it will be fixed against the inner wall of the recessed portion 42. On the other hand, the fixing portion 32 of the support pin 30 is pressed by the c-shaped elastic piece 37 Therefore, the support pin 30 can be reliably fixed in the recess 42. One support pin may be formed in the center portion, and / or a plurality of support pins may be formed in a line-symmetrical or point-symmetrical position in a concentric circumferential shape. The number of supporting pins is preferably 1 to 10 on a ceramic substrate having a diameter of 300 mm or less. When the resistance heating element 2 is formed on the opposite side (bottom surface) ib of the heating surface 1a of the ceramic substrate 1, since the recessed portion 42 is provided on the heating surface 1a, the degree of freedom of the pattern can be improved, and since the recessed portion 42 is not a through hole, The shrapnel does not come off without causing the support pin 30 to fall off. The tip of the columnar body of the support pin 30 is preferably a spire, for the same reason as the support pin A. The C-shaped member 27 and the elastic piece 37 are preferably made of metal, especially those which are hard to rust, such as stainless steel and Ni alloy. The supporting pins 20 and 30 are more preferably made of ceramics, and more preferably oxide ceramics such as alumina and silicon dioxide. This is based on the low thermal conductivity, and it is not easy to generate cold spots and hot spots. 11 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 male S) (Please read the precautions on the back before filling this page). -------- Order --- MT, Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative 526673 Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative A7 B7 V. Description of the invention (γ) The fixing method using the C-shaped member 27 and the elastic piece 37 is different from the fixing using adhesive materials, etc. Since the method is a physical fixing method, the members 27 and the elastic pieces 37 are not deteriorated by heat or the like. The diameter of the through hole and the recess is preferably 1 to 100 mm, and more preferably 2 to 10 mm. This is because if it is too large, it will cause a cold spot. In the present invention, the surface or heating surface of the semiconductor wafer from the ceramic substrate is preferably 5 to 5000 // m, and more preferably 5 to 500 // m. If it is less than 5 // m, the temperature of the semiconductor wafer will become uneven due to the temperature distribution of the ceramic substrate. If it exceeds 5000 // m, the temperature of the semiconductor wafer will not rise easily. The temperature difference becomes larger. Particularly, it is preferable that the semiconductor wafer is separated from the surface of the ceramic substrate or the heating surface by 20 to 200 // m. As shown in FIG. 7, in the ceramic heater of the present invention, an electrostatic electrode 43 can be formed inside the ceramic substrate 1. By attracting the semiconductor wafer such as the silicon wafer 9 by the electrostatic electrode 43, the plate bending of the semiconductor wafer can be concentrated in one direction, and the distance unevenness between the heating surface 1a and the semiconductor wafer can be reduced. As a result, the temperature of the semiconductor wafer can be made more uniform. The ceramic substrate of the present invention contains carbon, and its content is preferably 200 to 5000 PPm. This shields the electrodes and makes it easier to use blackbody radiation. The ceramic substrate of the present invention preferably has a diameter of 150 mm or more, and most preferably has a diameter of 200 mm or more. This is based on the fact that with such a large-diameter substrate, the temperature of the heating surface tends to become non-uniform, and a temperature difference easily occurs on the semiconductor wafer. 12 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) '------------ installed -------- order -------- -(Please read the precautions on the back before filling out this page) 526673 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (丨 \) The ceramic substrate of the present invention is preferably used above 100 ° C, More preferably, it is 200 ° C or more. This is because the temperature of the heating surface tends to become non-uniform, and a temperature difference easily occurs on the semiconductor wafer. The ceramic material constituting the ceramic substrate for a semiconductor device of the present invention is not particularly limited, and examples thereof include nitride ceramics, carbide ceramics, and oxide ceramics. Examples of the nitride ceramics include metal nitride ceramics, such as aluminum nitride, silicon nitride, boron nitride, and titanium nitride. Examples of the carbide ceramics include metal carbide ceramics, such as silicon carbide, chromium carbide, titanium carbide, tantalum carbide, and tungsten carbide. Examples of the oxide ceramic include metal oxide ceramics, such as metal oxide ceramics such as alumina, hafnium oxide, cordierite, and mullite. These ceramics can be used alone or in combination of two or more. Among these ceramics, nitride ceramics and carbide ceramics generally have better thermal conductivity than oxide ceramics. Among nitride ceramics, aluminum nitride is the most preferable, and its thermal conductivity is 180 W / m · K, which is the highest. In the present invention, a sintering aid is preferably contained in the ceramic substrate. The sintering aid may be an alkali metal oxide, an alkaline earth metal oxide, or a rare earth oxide. Among these sintering aids, CaO, Y203, Na20, Li20, and Rb20 are particularly preferred. These contents are preferably 0.1 to 10% by weight. It is preferable that the above-mentioned ceramic substrate has a lightness 値 of N4 in accordance with JIS Z 8721. This is based on the fact that those having such lightness have good radiant heat and shielding properties. 13 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- installation -------- order --------- (Please read the precautions on the back before filling this page) 526673 Printed clothing A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (π) Here, the brightness of N is the brightness of ideal black. The ideal white lightness is 10, and between the black lightness and the white lightness, 'each color is divided into 10 equal parts in such a way that the color lightness feels at equal intervals', which is indicated by the symbols of NO to N10. In the actual measurement, comparison is made with color cards corresponding to N0 to N10. In this case, the first decimal place is 0 or 5. The heating element 'provided on the surface or inside of the ceramic substrate of the present invention is preferably a metal or a conductive ceramic. The metal is preferably, for example, a noble metal (gold, silver, lead, iE), copper, pin, pin, or the like. Examples of the conductive ceramic 'include carbides of tungsten and molybdenum. These can be used alone or in combination of two or more kinds. Fig. 1 is a plan view showing a ceramic substrate constituting the ceramic heater of the present invention, and Fig. 2 is a partially enlarged sectional view thereof. The ceramic substrate 1 is formed in a disc shape, and the resistance heating element 2 is formed in a circular pattern on the bottom surface of the ceramic substrate 1 so that the temperature of the heating surface la of the ceramic substrate 1 is uniform throughout. The resistance heating element 2 is composed of a heating element layer 4 and a metal coating layer 5 formed on the surface thereof. These resistance heating elements 2 are a set of double concentric circles that are close to each other, and are connected as a single wire. At both ends, the terminal pins 3 constituting the input and output terminals are connected through a solder layer 6. . Further, a through hole 8 for inserting the lift pin 7 is formed in a portion near the center of the ceramic substrate 1, and a bottomed hole lc for inserting a temperature measuring element is formed on the bottom surface. As shown in FIG. 2, the lifting pin 7 is to place the silicon wafer 9 on the top to move it up and down, thereby transferring the silicon wafer 9 to 14 (not shown) ------ ------.— (Please read the precautions on the back before filling out this page) Order ---- Chinese paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 526673 A7 B7 5 Explanation of the invention (0) Transfer machine, or receive silicon wafer 9 from the transfer machine. In the present invention, after receiving the silicon wafer 9 on the lifting pin 7, the lifting pin 7 is lowered, and the silicon wafer 9 is held away from the surface of the ceramic substrate 1 by 5 to 5000 // m, and then heated. Heating is preferably performed at 150 ° C or higher. Fig. 3 is a cross-sectional view schematically showing a ceramic substrate in which a resistance heating element is embedded. At this time, the resistance heating element 12 is usually formed inside the ceramic substrate 11 at a portion closer to the bottom surface than the center, and can also be formed at a position that is more biased toward the heating surface 11a than the center. A through hole 15 is formed directly below the end of the resistance heating element 12. A pocket hole 16 is formed below the through hole 15 to expose the through hole 15, and a conductive wire (not shown) is connected to the exposed through hole 15. (Shown), etc., to energize the resistance heating element 12. Next, an example of a method for manufacturing the ceramic heater according to the present invention will be described. (1) First, ceramic powder, a binder, and a sintering aid are mixed. The average particle size of the powder to be mixed is preferably as small as about 0.1 to 5 / zm. This is based on the fact that the finer the sinterability, the better, but if it is too fine, the bulk density of the green sheet will decrease, the degree of sintering shrinkage will increase, and the dimensional accuracy may deteriorate. When an aluminum nitride substrate or the like is produced, a sintering aid such as yttrium oxide (Y203) may be added to the mixture. (2) Next, put the obtained powder mixture into a molding body, or a laminated body of the above-mentioned green sheet (both are false fired ones), in an inert environment atmosphere such as argon and nitrogen to Conditions of 1700 ~ 1900 ° C, 8 ~ 20MPa 15 The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling in this page) ”Each, one 0 ί ϋ ammt ϋ ϋ i_i— —ϋ Μ ^ I i memmt —ϋ Μίν = 口 S, printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 526673 printed by the Consumers’ Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (\ 4r ) Sintering is performed by heating and pressing. A ceramic substrate can basically be formed by firing a molded body or a green sheet laminated body composed of a mixture of ceramic powders, but when the mixture of ceramic powders is placed in a mold, the metal constituting the heating element The plate (foil) or metal wire is buried in the powder mixture, or a conductive paste layer forming a heating element is formed on one of the green sheets to be laminated, thereby obtaining a resistance heating element inside Ceramic substrate. Furthermore, after the sintered body is manufactured, a conductor paste layer is formed on the surface (bottom surface), and firing may be performed to form a heating element on the bottom surface. The conductor paste for the heating element is not particularly limited, and it is preferable to contain a resin, a solvent, a tackifier, etc., in addition to the metal particles or the conductive ceramics to ensure the electrical conductivity of the conductor. The metal particles are preferably, for example, a noble metal (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel, or the like. These can be used alone or in combination of two or more. This is based on the fact that these metals are less susceptible to oxidation and have a sufficiently large electrical conductivity when they become thin-film electrodes or the like. On the other hand, when they are linear (band-shaped) resistance heating elements as shown in FIG. Sufficient resistance required for heating. Examples of the conductive ceramics include tungsten and molybdenum carbides. These can be used alone or in combination of two or more. The particle diameter of these metal particles or conductive ceramic particles is preferably 0.1 to 100 / zm. This is based on the fact that if the particle size is less than 0.1 # m and is too fine, it will be easily oxidized. On the other hand, if it exceeds 100 / zm, It is not easy to sinter, which increases the resistance 値. 16 This paper size is in accordance with China National Standard (CNS) A4 (21 × X 297 mm). 24 Read the phonetic on the back? (Please fill in this page for matters) Install -------- Order ------ ΆΨ. 526673 A7 B7 V. Description of Invention (\ <) The shape of the metal particles may be spherical or scaly. When these metal particles are used, they can also be a mixture of balls and scales. When the metal particles are scale-like, or a mixture of spheres and scales, since the metal oxide between the metal particles becomes easy to hold, the adhesion between the heating element and the ceramic substrate is more reliable and can be increased. The resistance is 値 and is therefore advantageous. Examples of the resin used for the conductive paste include epoxy resin and phenol resin. Examples of the solvent include isopropanol. Examples of the tackifier include cellulose and the like. When the conductor paste for the heating element is to be formed on the surface of the ceramic substrate, it is preferable to add a metal oxide to the conductor paste in addition to the metal particles, so that the metal paste and the metal oxide are sintered. In this manner, by sintering the metal oxide and the metal particles together, the ceramic substrate and the metal particles can be made dense. Although the reason for improving the adhesion with the ceramic substrate by mixing the metal oxide is not clear, it can be considered that the surface of the metal particles and the surface of the ceramic substrate made of non-oxide are slightly oxidized to form an oxide film. The oxide films are sintered through the metal oxide to be integrated with each other, so that the adhesion of the metal particles and the ceramic is more reliable. When the ceramic constituting the ceramic substrate is an oxide, it is a matter of course that the surface is made of an oxide, so that a conductive layer having excellent adhesion can be formed. The metal oxide is preferably at least one selected from the group consisting of lead oxide, zinc oxide, silicon dioxide, boron oxide (B203), alumina, yttrium trioxide, and titanium dioxide. 17 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ▼ Package (Please read the precautions on the back before filling this page) --Order ----- 1 Intellectual Property Bureau, Ministry of Economic Affairs, China Printed by employee consumer cooperatives 526673 Printed by employees ’cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of invention (Justice) This is based on the fact that these oxides do not increase the resistance of heating elements, but can improve metal particles and ceramic substrates The reason for the closeness. When the proportion of the above-mentioned lead oxide, zinc oxide, silicon dioxide, boron oxide (B203), alumina, yttrium trioxide, and titanium dioxide is 100 parts by weight, it is preferably adjusted to: In comparison, lead oxide 1 to 10, sand dioxide 1 to 30, boron oxide 5 to 50, zinc oxide 20 to 70, alumina 1 to 10, yttrium trioxide 1 to 50, and titanium dioxide 1 to 50. More than 100 parts by weight. By adjusting the amount of these oxides within the above range, it is possible to particularly improve the adhesion to the ceramic substrate. The amount of the metal oxide added to the metal particles is preferably from 0.1% by weight to 10% by weight. The area resistivity when the heat-generating body is formed using the conductor paste having the above-mentioned configuration is preferably 1 to 1000 nm / E]. This is based on the fact that if the area resistivity exceeds 100 μmηΩ / □, the amount of heat generation relative to the amount of applied voltage becomes too small, and it will not be easy to control the heat generation of a ceramic substrate with a heating element on the surface. When the heating element is formed on the surface of the ceramic substrate, it is preferable to form a metal coating layer on the surface portion of the heating element. In this way, the internal metal sintered body can be prevented from being oxidized to change the resistance 値. The thickness of the formed metal coating layer is preferably 0.1 to 10 #m. The metal used in forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples include gold, silver, palladium, platinum, nickel, and the like. These can be used alone or in combination of at least two kinds. Among them, nickel is preferred. 18 ^ Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 male '— — (Please read the precautions on the back before filling this page) tr --------- 526673 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employee consumer cooperative A7 B7 V. Description of the invention (q) When the heating element is formed inside the ceramic substrate, the surface of the heating element will not be oxidized, so coating is unnecessary. Next, the resistor heating element is provided. A ceramic substrate is provided with a through hole or a recess for inserting a support pin, a support pin is inserted therein, and an external terminal is connected, and then a bottom hole is provided as necessary, and a thermocouple is embedded in the ceramic substrate. It is installed in a support container, etc., and the wiring from the resistance heating element and the temperature measuring element is connected to a control device, etc., so that the manufacture of a semiconductor wafer heating device (ceramic heater) is completed. In addition, a convex shape formed on a ceramic substrate is used. The semiconductor wafer is held to form a space of 5 to 500 // m between the ceramic substrate and the substrate, and is heated at 150 ° C or higher to apply various processes to the semiconductor wafer. [The best form for implementing the present invention] (Example 1) Manufacture of ceramic heater (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 11 / zm), and Y2O3, average particle size 0.4 // m) 4 parts by weight, 10 parts by weight of acrylic binder, mixed into a mold, and carried out in a nitrogen atmosphere at 1890 ° C and a pressure of 15 MPa for 3 hours The aluminum nitride sintered body was obtained by hot pressing. Then, a circular plate body with a diameter of 210 mm was cut out from the sintered body as a ceramic substrate 1, and through holes were formed at three positions on the ceramic substrate 1 to form through-holes with a diameter of 10 mm. 8. (2) On the bottom surface lb of the ceramic substrate 1 obtained in (1) above, a conductive paste is printed by screen printing. The printed pattern is a concentric circle pattern shown in Figure 1. 19 This paper is in accordance with Chinese national standards (CNS) A4 specification (210 x 297 mm) —----- Order · -------- (Please read the precautions on the back before filling this page) 526673 A7 __ B7 V. Description of the invention (\ 8) 〇 As a conductor paste, it is formed by using through holes of a printed circuit board Solubest PS603D, manufactured by Zenith Chemical Research. This conductor paste is a silver-lead paste containing 100 parts by weight of silver, and contains lead oxide (5% by weight) and zinc oxide (55% by weight). 7.5 parts by weight of a metal oxide composed of silicon dioxide (10% by weight), boron oxide (25% by weight), and alumina (5% by weight). The silver particles have an average particle diameter of 4.5 / zm. (3) Next, the sintered body on which the conductor paste is printed is heated and fired at 780 ° C. to sinter the silver and lead in the conductor paste on the sintered body to form a heating element 4. The silver-lead heating element 4 has a thickness of 5 // m, a width of 2.4 mm, and an area resistivity of 7.7 μmΩ / Ε]. (4) Immerse in an electroless plating bath composed of an aqueous solution of nickel sulfate 80g / l, sodium hypophosphite 24g / l, sodium acetate 12g /: l, boric acid 8g / l, and ammonium chloride 6g / l. The ceramic substrate 1 is formed by depositing a metal coating layer 5 (nickel layer) with a thickness of 1 ^ zm on the surface of the silver-lead heating element 4 to obtain a resistance heating element 2 〇 (5) at the mounting portion of the terminal for connecting the power source A silver-lead solder paste (manufactured by Tanaka Precious Metals) was printed by a screen printing method to form a solder layer. Next, a terminal pin 3 made of Kovar was placed on the solder layer 6 and heated at 420 ° C. to perform fusion welding, so that the terminal pin 3 was mounted on the surface of the heating element 2. (6) Insert the thermocouple for temperature control into the bottom hole, pour into the polyimide resin, and harden it at 190 ° C for 2 hours. Set the ceramic (refer to Figures 1 and 2) to 20 paper sizes. China National Standard (CNS) A4 Specification (210 X 297 mm) ----------- Installation -------- Order --------- (Please read the back first Note: Please fill in this page again.) 526673 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, A7, B7. 5. Description of the invention (q) After holding the container, perform wiring connections, etc., to obtain a ceramic heater. Next, 'the lift pin 7 is inserted into the through hole 8 of the ceramic substrate 1, and the wafer 9 is placed on the lift pin 7, and the lift pin 7 is slowly lowered so that the distance between the sand wafer and the ceramic substrate becomes 100 / / m. The non-formed side of the resistance heating element 2 is used as a heating surface la. The ceramic substrate 2 was heated up to 600 ° C, and the maximum temperature and the minimum temperature of the silicon wafer 9 were measured with a thermal observer (Japanese DATUM Corporation, IR162012-0012). The maximum temperature of a silicon wafer is 600 ° C, the minimum temperature is 595 ° C, and the difference between the highest temperature and the lowest temperature is 5 ° C. Using a fluorescent X-ray analyzer (RIX2100 manufactured by Rigaku), it was confirmed that the silicon wafer was not contaminated with Y, and as a result, there was no contamination. (Example 2) Production of ceramic heater (Fig. 3) with heating element inside (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size by weight, yttrium trioxide (average particle diameter 0.4 // m) 4 parts by weight, acrylic resin binder Π.5 parts by weight, dispersant 0.5 parts by weight, acrylic binder 0.2 part by weight, and 53 parts by weight of alcohols composed of 1-butanol and ethanol are mixed to form a paste. It is formed by a doctor blade method to produce a green thin sheet having a thickness of 0.47 mm. (2) Next, the green sheet is dried at 80 ° C for 5 hours. Part of the through hole 15 of the connecting terminal pin. (3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 // m, 3.0 parts by weight of acrylic acid-based binder, and 3.5 parts by weight of α-terpineol solvent And dispersant 21 ----------- loading -------- order --------- (Please read the precautions on the back before filling this page) This paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 526673 Printed clothing A7 B7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (w) 0.3 parts by weight To prepare conductor paste A. 100 parts by weight of tungsten carbide particles having an average particle diameter of 3 // m, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant were mixed and prepared. The conductor paste B is formed. The conductor paste A is printed on the green sheet by a screen printing method to form a conductor paste layer. The printed pattern is a concentric circle pattern. The conductor paste B is filled in the through holes for connecting terminal pins. Using the through hole 0, 37 sheets and 13 sheets of unprinted tungsten paste were superimposed on the upper side (heating surface) and the lower side of the green sheet after completion of the above treatment, and then laminated at a pressure of 13 (TC, 8 MPa. (4 ) Next, the laminate was degreased in nitrogen at 60 ° C for 5 hours, and hot-pressed at 1890 ° C and a pressure of 15 MPa for 3 hours to obtain an aluminum nitride plate having a thickness of 3 mm. A 230 mm disc After the shape, a ceramic substrate 11 having a heating element with a thickness of 6 // m and a width of 10 mm is produced. (5) Next, the ceramic substrate 11 obtained in (4) is honed with a diamond millstone, and then placed on a cover. The cover is provided with a bottomed hole 11c (1.2m in diameter for thermocouple) on the surface by blasting treatment such as SiC. m, depth 2.0mm). (6) Next, a part of the through hole for the through hole is excavated to form the bag hole 16, and then gold-wax made of Ni-Au is used for heat fusion welding at 700 ° C to place the bag in the bag. An external terminal pin (not shown) made of Kovar is connected to the hole 16. The connection of the external terminal pin is preferably a structure with a tungsten support forming a three-point support. This will ensure connection reliability. A plurality of thermocouples for control are buried in the bottomed hole. The 22 paper sizes of this ceramic are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page) π Installation -------- Order ------ § · 526673 Printed clothing A7 B7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (τ \) The base plate (refer to Figure 3) is set in the support container Then, wiring connection and the like are performed to obtain a ceramic heater. (8) Next, a lifting pin 7 is inserted into the through hole 8 of the ceramic substrate Π, and the silicon wafer 9 is supported by the lifting pin 7, and the lifting pin 7 is slowly lowered so that the distance between the silicon wafer and the ceramic substrate becomes 150 / / m. Further, a side surface remote from the heating element 2 is used as a heating surface la. In addition, the ceramic substrate 2 was heated to 600 ° C, and the maximum temperature and the minimum temperature of the semiconductor wafer were measured by a thermal observer (Japanese DATUM Corporation, IR162012-0012). The maximum temperature of a semiconductor wafer is 600 ° C, the minimum temperature is 595 ° C, and the difference between the highest temperature and the lowest temperature is. Using a fluorescent X-ray analyzer (RIX2100 manufactured by Rigaku), it was confirmed that the silicon wafer was not contaminated with Y, and as a result, there was no contamination. (Example 3) Although the manufacture of a ceramic substrate provided with a support pin 20 is basically the same as in Example 1, a communicating through hole 41 having a diameter of 5 mm on the heating surface side of the ceramic substrate and a diameter of 3 mm on the opposite side is provided. (See FIG. 5) Here, an alumina support pin 30 having a shape shown in FIG. 4 (a) is fitted. The supporting pin 30 has a structure in which the diameter of the fitting portion 22 is about 5 mm, the diameter of the fixing portion 24 is 3 mm, and the length is about 6.1 mm. The fixing portion 24 exposes the bottom surface 1b of the ceramic substrate 1. A C-shaped member 27 (see Fig. 5 (b)) made of stainless steel is fitted between the fixing portion 24 and the bottom surface (opposite surface of the heating surface) lb of the ceramic substrate for fixing. This support pin 20 protrudes 100 // m from the wafer heating surface la. (Example 4) Manufacture of ceramic substrate with support pin 30. This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm). ---- Order --------- (Please read the notes on the back before filling out this page) 526673 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 is the same, but a recessed portion 42 having a diameter of 3 mm and a depth of 2 mm is provided on the heating surface side of the ceramic substrate 1. Here, a support pin 30 made of alumina as shown in FIG. 4 (b) is fitted. The diameter of the columnar portion 31 of the support pin 30 is about 2 mm, and the diameter of the fixed portion 32 is 3 mm, and the length is about 3.1 mm. Further, the fixing portion 24 thereof exposes the bottom surface lb of the ceramic substrate 1. A C-shaped elastic piece 37 made of stainless steel is embedded in the recessed portion 42 to fix the support pin 30. The support pin 20 is projected from the wafer heating surface 1a by 100 vm. (Embodiment 5) The manufacture of a ceramic substrate having convex portions is basically the same as in Embodiment 1, but a conical convex portion 81d as shown in Fig. 8 is provided on the surface by hot pressing. The degree of the convex portion 81d is about 40 #! ^ 〇 (Example 6) Although the manufacture of the heater with an electrostatic chuck is basically the same as in Example 2, the conductive paste A is printed on the green sheet by screen printing When the conductor paste layer is formed, in addition to the concentric circular heater pattern, a bipolar electrostatic chuck pattern is also printed. Further, as in the case of the third embodiment, a through-hole 41 is provided in the ceramic substrate 1, and a support pin 20 is inserted into the through-hole 41, and then fixed by a member 27 'to obtain a ceramic substrate having a structure not shown in FIG. The support pin 20 is adjusted so as to protrude 300 // m from the heating surface la. In the above, for the ceramic heaters of Examples 1 to 6, the temperature of the silicon wafer was measured using a thermal observer (manufactured by DATUM Corporation, IR162〇12-0012) to obtain the best quotient temperature and the lowest temperature. A fluorescent X-ray analyzer (RIX2100, manufactured by Rigaku) was used to confirm whether the silicon wafer was contaminated by γ24. This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) ^ w *- ------ Order -------- (Please read the notes on the back before filling out this page) 526673 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (y?) The results are shown in Table 1 below. (Example 7) Hot plate made of SiC (1) Silicon carbide powder (Diaic GC-15, manufactured by Yakushima Electric Co., Ltd., average particle diameter 1.1 · m) 100 parts by weight, 4 parts by weight of carbon, acrylic acid A composition consisting of I2 parts by weight of resin binder, 5 parts by weight of B * C, 0.5 parts by weight of dispersant, and 1-butanol and ethanol, and spray-dried to produce a granular powder. (2) The powder is placed in a mold and formed into a flat plate shape to obtain a formed body. (3) The formed body after processing is hot-pressed at a temperature of 1900 ° C and a pressure of 20 MPa to obtain a silicon carbide sintered body having a thickness of 3 mm. (4) The silicon carbide sintered body was annealed in nitrogen at 1600 ° C for 3 hours, and then a circular plate body with a diameter of 21 mm was cut out from the plate-like body to obtain a ceramic plate. Shaped body (ceramic substrate Π). Thereafter, a glass paste (G-5270, manufactured by Zhaorong Chemical Industry Co., Ltd.) was coated on the surface, and heated and melted at 600 ° C to form a Si02 layer having a thickness of 2 // m on the surface. Next, the ceramic substrate is subjected to drilling processing and cutting member processing to form through-holes 15 for inserting lifting pins, through-holes for inserting lifting pins for supporting silicon wafers, and bottomed holes for embedding thermocouples. 14 (diameter depth 2mm). Then, on the heating surface side for heating the silicon wafer, a recessed portion 'is formed at the center point, and three recessed portions are formed at equal intervals on the concentric circumference. (5) On the bottom surface of the sintered body obtained in (3) above' The conductor paste is printed by screen printing. The printed pattern is a concentric circular pattern shown in FIG. 1. 25 This paper size applies to China National Standard (CNS) A4 (210 χ 297 mm) AW ^ -------- Order --------- ^^ 1 (Please read the note on the back first Please fill in this page for further details.) 526673 Printed clothing A7 B7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (times) As a conductor paste, it is made by DELI Chemical Research Co., Ltd. using the formation of through-holes of printed circuit boards. Sorubest PS603D. The conductor paste is silver-giving paste 100 parts by weight with respect to silver, and contains lead oxide (5 weight percent), an oxide bowl (55% by weight), sand dioxide (10% by weight), and boron oxide ( 25% by weight) and alumina (7.5% by weight of metal oxide composed of 5% by weight. The silver particles are flaky with an average particle diameter of 4.5 // m.) (6) Next, a sintered body printed with a conductive paste is used. Heating and firing at 780 ° C to sinter the silver and lead in the conductor paste on the sintered body at the same time to form the resistance heating element 12. The thickness of the silver-lead resistance heating element 12 is 5 // m and the width is 2.4mm, area resistivity is 7.7mQ / 0. (7) Next, the surface of the glass paste is coated on the surface, and a glass coating is applied on the surface by firing at 600 ° C. Finally, the center and its surroundings Three recesses were embedded in alumina spheres to support the wafer. (Comparative Example 1) Although the same as in Example 1, the silicon wafer and the ceramic substrate were brought into contact and the same measurement was performed. The maximum temperature of the silicon wafer was 605 ° C, the lowest temperature is 595 ° C, and the difference between the highest and lowest temperature is 10 ° C. In addition, fluorescent X-ray analysis is used A device (RIX2100 manufactured by Rigaku) was used to check whether the silicon wafer was contaminated by Y. As a result, some diffusion of Y was found in the silicon wafer. (Experimental Example 1) Although the same as in Example 1, the silicon wafer and ceramic were used. The distance between the substrates is set to 26. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). (Please read the precautions on the back before filling in this page) Loading n · 1 1 > 1 1 ·-^ a * a ··· iw * a ··· * * ι · ηι I ι Xikou 526673 A7 B7 V. Description of the invention (6) is 3 // m and the same measurement is performed. The maximum temperature of the silicon wafer is 605 ° C, the lowest temperature is 595 ° C, and the difference between the highest temperature and the lowest temperature is 10t: In addition, a fluorescent X-ray analyzer (RIX2100 manufactured by Rigaku) was used to confirm whether the silicon wafer was contaminated by Y As a result, there was no contamination. (Experimental Example 2) Although the same as in Example 1, the distance between the silicon wafer and the ceramic substrate was set to 510/2 m, and the same measurement was performed. The maximum temperature of the silicon wafer was 597 ° C, the minimum temperature is 594 ° C. Although the ceramic substrate is heated to 600 ° C, the temperature of the silicon wafer is slightly lower. With a thermal observer When the ceramic substrate was observed, the maximum temperature was 605 ° C, the minimum temperature was 595 ° C, and the difference between the highest temperature and the lowest temperature was 10 ° C. In addition, the silicon was confirmed using a fluorescent X-ray analyzer (RIX2100 manufactured by Rigaku). Wafer was not contaminated with γ, and as a result, there was no contamination. (Test Example 3) Although the same as Example 1, the distance between the silicon wafer and the ceramic substrate was set to 5 100 / zm, and the same measurement was performed. The maximum temperature of the silicon wafer is 410t, the minimum temperature is 400 ° C, and the difference between the highest temperature and the lowest temperature is 10 ° C. Although the temperature of the ceramic substrate was raised to 600 ° C, the temperature of the silicon wafer could not be increased sufficiently. When using thermal observation to observe the ceramic substrate, the local temperature is 605 ° C, the minimum temperature is 595 ° C, and the difference between the highest temperature and the lowest temperature is 10 ° C. In addition, it was confirmed whether or not the silicon wafer was contaminated with Y by using a fluorescent X-ray analyzer (RIX2100 manufactured by Rigaku Corporation), and as a result, there was no contamination. The results of the above examples, comparative examples, and test examples are shown in Table 1. In Example 7, the separation distance is 50 ^ m, and the maximum temperature is 600 ° c. 27 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page ) Loaded
1T---------^_MWT 經濟部智慧財產局員工消費合作社印製 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（沁） ，最低溫度595°C，且沒有Y的污染。 又，加熱至150°C後，載置上25°C的晶圓，測定加熱 溫度回復到150°C所需的時間，實施例1〜7約爲25秒。相 對於此，比較例、試驗例1爲50秒，試驗例2約35秒， 試驗例3爲30秒。 表1 離間距離 (β m) 最高溫度 (°C) 最低溫度 (0〇 有無Y的 污染 實施例1 100 600 595 ^frrr Mil： j\w 實施例2 150 600 595 ^frrr 11II: j \ \\ 實施例3 100 600 595 >fnr Ί Π1: J \ \\ 實施例4 100 600 595 iitr J \ \\ 實施例5 400 598 595 irrr ΤΓΤΤ j \ \\ 實施例6 300 600 598 inL· TltT J \ \\ 比較例1 0 605 595 有 試驗例1 3 605 595 ^ΊΠΓΓ 111 IT J\\\ 試驗例2 510 597 594 ^fnT- ttn J\\\ 試驗例3 5100 400 410 >fn~r itiT J \ \\ 從上述表1的結果可明顯的看出，比較例1中，陶瓷 基板的溫度分佈是直接反映在矽晶圓的溫度分佈上。又， 試驗例1也是，陶瓷基板表面的溫度差直接反映於矽晶圓 的溫度差，而不具備充分的溫度均一性。另一方面，試驗 例2，其矽晶圓的溫度比陶瓷基板來得稍低。又試驗例3 中，相較於陶瓷基板表面，矽晶圓的溫度變得太低，完全 28 -----------AW --------訂·-------- (請先閱讀背面之注意事項再填寫本頁) 格 規 A4 S) N (C 準 標 家 國 國 中 用 適 度 尺 張 紙 本 (210 χ 297 公釐） 526673 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（1) 不實用。 實施例3、4之陶瓷基板，由於將支持銷加以固定， 不用調整也能經常使矽晶圓和陶瓷基板加熱面的距離成一 定。又，由於將支持銷以物理性的方式固定住，不易受熱 而損傷、劣化，也不致發生脫等。 實施例5之陶瓷基板，係在加熱面的表面形成圓錐狀 的凸狀部，而不須耗費爲固定支持銷等的工夫。又，由於 不須固定支持銷，故不須使用金屬製的彈片或固定構件， 因此在支持銷周圍之溫度降得極低之冷點將不致產生。 又實施例6之陶瓷基板，由於用靜電夾頭來吸引矽晶 圓，以使矽晶圓的板彎變形集中於單一方向，故能使矽晶 圓的溫度差幾乎完全消失。 從表1之實施例1〜6之矽晶圓有無受到Y污染的測定 結果可明顯的看出，藉由使矽晶圓和陶瓷基板呈分離，即 可完全防止Y朝向矽晶圓的擴散。 〔產業上之可利用性〕 如以上所說明般，本發明之陶瓷加熱器，能將半導體 晶圓以均一的溫度來加熱，又能防止半導體晶圓的污染。 又，本發明的支持銷，就算加熱也不致脫落，而能將半導 體晶圓和陶瓷基板的加熱面之距離經常保持一定。 29 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）1T --------- ^ _ MWT Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 526673 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 5. Description of the invention (Qin), the minimum temperature is 595 ° C, and No pollution from Y. After heating to 150 ° C, a 25 ° C wafer was placed, and the time required to return the heating temperature to 150 ° C was measured. Examples 1 to 7 were about 25 seconds. In contrast, Comparative Example and Test Example 1 were 50 seconds, Test Example 2 was about 35 seconds, and Test Example 3 was 30 seconds. Table 1 Distance (β m) Highest temperature (° C) Lowest temperature (0 with or without pollution of Y Example 1 100 600 595 ^ frrr Mil: j \ w Example 2 150 600 595 ^ frrr 11II: j \ \\ Example 3 100 600 595 > fnr Ί Π1: J \ \\ Example 4 100 600 595 iitr J \ \\ Example 5 400 598 595 irrr ΤΓΤΤ j \ \\ Example 6 300 600 598 inL · TltT J \ \\ Comparative example 1 0 605 595 Test example 1 3 605 595 ^ ΊΠΓΓ 111 IT J \\\ Test example 2 510 597 594 ^ fnT- ttn J \\\ Test example 3 5100 400 410 > fn ~ r itiT J \ \\ From the results in Table 1 above, it can be clearly seen that in Comparative Example 1, the temperature distribution of the ceramic substrate is directly reflected on the temperature distribution of the silicon wafer. Also, in Test Example 1, the temperature difference on the surface of the ceramic substrate is also It is directly reflected in the temperature difference of the silicon wafer, and does not have sufficient temperature uniformity. On the other hand, the temperature of the silicon wafer in Test Example 2 is slightly lower than that of the ceramic substrate. In Test Example 3, compared with ceramics, On the surface of the substrate, the temperature of the silicon wafer becomes too low, completely 28 ----------- AW -------- Order · -------- (Please read the back first Notice Please fill in this page again) Standard A4 S) N (C Standard bidding papers with moderate rule paper (210 x 297 mm) 526673 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs 1) Not practical. Because the ceramic pins of Examples 3 and 4 are fixed, the distance between the silicon wafer and the heating surface of the ceramic substrate can be constantly fixed without adjustment. Moreover, the physical pins It is fixed by the method, and is not easy to be damaged, deteriorated by heat, and does not cause detachment, etc. The ceramic substrate of Example 5 is formed with a conical convex portion on the surface of the heating surface, and it does not require labor for fixing the supporting pins. In addition, since the support pin does not need to be fixed, there is no need to use a metal dome or a fixing member, so a cold spot where the temperature around the support pin is extremely low will not be generated. The ceramic substrate of Example 6 uses an electrostatic clamp. The silicon wafer is attracted from the top so that the plate bending deformation of the silicon wafer is concentrated in a single direction, so that the temperature difference of the silicon wafer can be almost completely disappeared. Y measurement result of the contamination can be significantly seen, by making the silicon wafer and the ceramic substrate in isolated, i.e., Y direction can completely prevent diffusion of the silicon wafer. [Industrial Applicability] As described above, the ceramic heater of the present invention can heat a semiconductor wafer at a uniform temperature and prevent the semiconductor wafer from being contaminated. In addition, the support pin of the present invention does not fall off even if heated, and can keep the distance between the semiconductor wafer and the heating surface of the ceramic substrate constant. 29 ----------- Installation -------- Order --------- (Please read the notes on the back before filling this page) This paper size is applicable to China Standard (CNS) A4 specification (210 X 297 mm)