TW524872B - Sputtering film formation device and process of sputtering film formation - Google Patents

Abstract

The present invention relates to a sputtering film formation device and a process of sputtering film formation, which is a sputtering film formation device can be provided an oscillating magnetron magnetic circuit on the back side of the target, lowers the formation of nodules on the surface of the target, and further increases the rate of operation of the device and facilitates to promote the production efficiency without recovering the surface of the target into the initial state by lowering the formation of nodules on the surface of the target. The sputtering film formation device of the present invention comprises: a target 20 facing the substrate 42; and a magnetron magnetic circuit 24 provided on the back side of the target; in addition, the sputtering film formation device oscillates the magnetron magnetic circuit along a certain direction so as to carry out the process of sputtering film formation on the surface of the substrate. The sputtering film formation device of the present invention further comprises a control circuit 272, and the control circuit 272 controls the oscillating velocity of the magnetron magnetic circuit so as to produce a plasma area 7 possessing the sputter ability on the surface of the target via the magnetron magnetic circuit, and further to carry out the sputter etching process successively over 1 second against each region of the surface of the target via the plasma area 7 possessing the sputter ability.

Description

524872 V. Description of the invention (l) [Detailed description of the invention] [Technical field to which the invention belongs] The present invention relates to a sputtering film forming apparatus and a sputtering film forming method; in particular, the present invention relates to a method having at least one The magnetron magnetic circuit configured to face the substrate, and the magnetron magnetic circuit is also shaken at a relatively slow speed to facilitate sputtering on the surface of the substrate. Sputtering film forming device for film processing and method for forming sputtered film. [Preceding technology] To =, in the prior art, 'system has been known to use, for example, a type 1 sputter film forming apparatus using a magnetron cathode (for example, Japanese Patent Laid-Open No. 7 _ ^ 18 = 5) . The basic structure of the sputtering film forming apparatus will be briefly described. & Finer f. The sputtering film-forming device is provided in the substrate-forming sputtering film-forming chamber, and is provided with a plurality of individual magnetron cathodes, which are generally located at s u 枉. After making the target, the head can be installed on the cathode body facing the transported god # on the back of the cathode body. The magnetic circuit of the magnetron, and the "fork is placed with a wide amplitude, along the same = to the electric = energy" dry magnetic circuit: the position is on the back of the standard trunk i, and: J by the magnetic field, i: ：:: The field is "and" is still on the surface of the target. The so-called rocking magnetron magnetic circuit is 4 524872. V. Description of the invention (2) The standard formed by the charged particles from the plasma is moved. Sputter etch processing efficiency caused by 俨 on the surface of the target. 2. It is used as a magnetic circuit for rocking the magnetron. Shaking mechanism.Single-vibration shaking mechanism = single-vibration type of movement: 彳 糸 It has the following special characteristics in the magnetron magnetic circuit to change the shaking speed in its shaking mechanism. Almost the center of the swinging cathode = 、, Youling, Asia, and the most #speed mouth in the magnetron system. The swinging speed in the reciprocating swinging mechanism, ★ in a specific direction (substrate transfer direction, ft control) f magnetic circuit of _ film formation device, _ rf 2) of The shaking of the erosion part; and the "direction length" of the target formed by the base plating etching the target is smaller in the shaking direction of the magnetron magnetic circuit, and the matching is: the second part is determined to be relatively long. The erosion part The area of the magnetic field line produced by the closed circuit is large: the so-called magnetic tube that can determine the invading part of the standard surface: meaning: for the stomach to interfere with the implementation area 4. When the magnetron surface: stop the dead ' Zeya's inability to fully use the target is just as described above. It follows the specific magnetic circuit of the magnetron. With the magnetron's magnetic circuit shaking, it shakes along the aforementioned direction along the shaking direction. = Real: 1. In the area where the erosion is carried out, pass each of 89l07738.ptd on the surface of the target. Page 6 524872 V. Description of the invention (3) In fact, the Risi Temple is reciprocated. When the surface of the target is on the upper surface, and the various parts on the implementation area are engraved on the day, the length of each magnetron in the direction of the movement of the various parts in the moving direction is the length of the magnetron. Time to mention The high film thickness is about 0.26 seconds before the shaking of the conventional circuit [the ash mines of the various parts of the invention on which the invention is intended are engraved with the rods engraved along the various parts of the target surface according to the private person Γ. In the movement, because of 4 ，, the erosion area, the upper part of the erosion area, passed through the long-neighboring neighbour 1 and repeatedly passed the mark in the area where the erosion was carried out: Feng "Sputter etching process for each part on the surface of the target. On the other hand, the surface of the target that passes through once in the in-position: Bΐ state and again: Time: the mark "Each area on the surface is equal to the 4% of the erosion area." The target of the target; the face of continuous life, the gate of jealousy, and the jealous man said that in the implementation area of the Yuyou, ^ 恷 the invasion of the implementation area, so as to be inclined to the :: bit, while she is processing, the two d σ The time T required for the sputter etching process of the bit is in the circuit, and the shaking speed is ν, and the shaking side of the erosion area is ^ _. I know the length in the shaking direction of the etching part) is w 1 = W ^ V formula, which refers to the time T as "continuous splash". In the conventional prior art sputtering film-forming apparatus, for uniformity, the time τ is set, which is a relatively short time called a large time. In other words, if the ash ore film-forming apparatus is used, the magnetron magnetic speed is set to a relatively high speed. The problem to be solved] In the former Θ technology sputtering deposit film forming device, the continuous sputtering and etching time T of the surface of the standard leather is relatively short.

524872 V. Description of the invention (4) For the time being, therefore, M IT & & refers to Fig. 9 ~ Fig. 4 and the problem of Ai Yi occurs. , 乂 — In the center of the clothes, the magnetic circuit of the magnetron and the plasma are the direction of the movement of each person, and on the surface of the target, proceed:. = 9 is representative of the position dependence of the shaking speed of the magnetic circuit of the f: ί tube magnetic circuit. FIG. 12 is a diagram for showing that the surface of the target 20 at the time u at the conventional prior art magnetic field ΓΓ is subjected to an etch-down etching process M] t. On the back surface of the target 20, the freely swingable = magnetron magnetic circuit (permanent magnet) 24 is arranged, and also by 2: 3: magnetic circuit (permanent magnet) 24 'is formed according to the so-called == 标 把 2. The magnetic field of the magnetic field lines 6 on the surface part. Denso 7 is generated in the closed space formed by the loan 7: taxi: good 6. = Plasma 7 to create the aforementioned erosion area. If viewed from the top of figure j =, the eroded basal area formed by the plasma 7 has a circular shape as a whole. However, in Figure 2, due to the eroded area and the target The apparent relationship between the 20's is therefore that the part with the width known along the shaking side becomes the area where each surname is implemented. In the etched portion 20a, a sputter etching process is performed by using the area where the electric and etching is performed directly above. 1 = Shake of fork road 24, Electropoly 7 series is also on the surface of the standard leather, magnetic and also with the movement of the plasma 7, so that sputtering should be performed, the erosion of the part 2 〇a , Followed by the move. / Again ^ 1 1 | I 11 I 1 11 1 11 89107738.ptd

Page 8 24872 V. Description of the invention In addition, on the etched part, 8b. Next, the non-invaded part and the non-invaded part of the etched part in the cathode are processed. Processing at time 92. But when I was engraved, I went on 9 2 again. This makes prodromal phenomena not easy82. When it is long, it is precisely the non-aggression around the invading rice section 2 〇a on the surface of the marker 20 by the so-called condensed matter (nodule (5)) as shown in Figure 1 2 What is shown is that the particles for re-attachment are piled up in FIG. 13 'showing the total time of the magnetic field of the prior art ^ "The lower surface of the standard 20 passes through the base state. At time 11 At this time, due to the plasma 7, the moving part 9 2 is directly above the part 9 2 to be moved, so that the part 9 2 to be formed becomes the part 11 when it is etched and etched 11 by sputtering etching. Corresponds to the eroded part. The part deposited on the part and the particles 81 for attachment is sputtered ^ Yes, the sputtering is performed for all the re-adhesion particles 8 丨 = time required, It is not enough. Therefore, at the time of attachment of the particles 81, the remaining non-eroded portion, and after a certain period of time, the remaining adhesion due to the plasma 7 will be described. The particles 81 are heated and changed so that the remaining particles 81 for re-adhesion become The so-called spoiled particles with sputter etching treatment are re-adhered to the particles on the surface of the surface of the standard metal engraved on the surface of the standard metal bar 20 as shown in Figure 14 is the excavation of the standard The surface of the target 20, but the aforementioned phenomenon is reversed, it is impossible to excavate the site of the substance that is not easy to be sputtered and etched, so that the so-called not easy to sputter is described in f The etched portion is plated. The above-mentioned excavation residue 83 is called a "spheroid". "Nodule" will make the target 20 profit 89107738.ptd page 9 524872 V. Description of the invention (6) The utilization efficiency becomes worse. In the conventional prior art sputtering film-forming device, the continuous reduction of various parts on the surface of the target 20: the processing time τ (= w / 乂, about 0.26 seconds, etc.). H'l is formed), so that only about 35% of the target target I can be obtained. In addition, since the pellets are not easily etched by sputtering, the pellets are formed on the surface of the standard stem ( _uJ :: will increase with the increase of the amount of electric power input, so that ^ ^ is low. "X · in the figure U, the characteristic shown in 52, series; at the speed of: Film formation speed of the first two technology. Since the amount of power is increased with the increase of J :: two degrees, so 'in order to be on the substrate, the system must be timely The correction process of the input electric power is being performed. / 、 In addition, like on a substrate, Ar (argon) gas and J are used, and In-Sn-O (indium-tin-oxygen) -based transparent conductive film (;) The flow rate of the introduced reactive gas forms a pair = in the state of the thin film of value, t changes the thrown = finds the optimum for the reactive gas When the amount of introduction is changed. On the surface of 糸 2, nodules are formed, which results in == :: 臭:: 'The correction of the input electric power is also being performed, and so on; On the soil plate, a film with the same film thickness is attached to the most appropriate film characteristics, and the amount of oxygen introduced into the gas in order to support the gas. ”Μ 彡, the reaction should be corrected 89107738.ptd page 10 524872, invention Explanation (7) In addition, because the ratio of spheres (η 〇du 1 e) to thunder resistance, therefore, the ratio of the target irradiated by the plasma to the target should be easily charged. When the charged particles When the charged it becomes phase, the charged particle system becomes an arc, and the lightning will: arc above a certain level, so that there is a so-called cause that the position is in the pole. Sister Worship® with Electricity% & lt The phenomenon of appearance damage to a certain plate on the shot site occurs. The characteristic shown by " γ ^ ^ τ < χ in Fig. 11 is 5 4 which represents the conventional prior art sputtering film forming device. Dependence on the amount of power input. In addition, the arc of money changes the chemical state of the plasma. Like With the use of Ar (argon) gas and oxygen, the no film (In-Sn-〇 (indium-tin-oxygen) transparent conductive film) is subjected to a reactive sputtering film formation process, and it 〇 In the state where the amount of oxygen placed in the film forms a so-called thin film with the most appropriate film characteristics, the chemical state of the plasma generated by the system is changed by the arc, so that the film is changed to Ιτ〇 The amount of oxygen in the film may cause the problem of so-called degradation of the film quality. The purpose of the invention is to solve the aforementioned problems. Therefore, the present invention provides a kind of swing magnetron on the back of the target. In the old-time ore film forming device and the money ore film forming method of the magnetic circuit, the phenomenon of nodule formation on the surface of the handle can be reduced, and by reducing the standard bar ^ = upper nodule (n 〇dule) formation phenomenon, so that it does not need 2 ί dry surface, return to the initial state, and can improve the operation of the device '^' and 'cause the structure and method to increase the so-called production efficiency effect

89107738.ptd Page 11 524872 V. Description of the invention (8) And = to achieve the aforementioned purpose 'Therefore, the present invention is as follows to describe the sputtering of the present invention into a sloppy dress, which has ... A target with a substrate disposed oppositely in the membrane chamber; and a magnetron magnetic circuit provided in the target, the basement film-forming device of the present invention:, tied to; along the magnetron magnetic circuit 'to facilitate the surface of the substrate It is sputtered into a plutonium. The sputtering film-forming device mechanism controls the shaking speed of the magnetron's magnetic circuit so that the 5 tube magnetic: circuit 'is on the surface of the standard stem, and a plasma region with a sputtering: ability is produced (that is, by the The formation of the magnetron's magnetic circuit: the magnetic slurry; in order to make the surface of the standard stem fine: ::, and when the parts of the ";:, Γ" with the shovel ability are made, each of the target surface The target 2 of the target surface is left in the plasma area for more than 1 second. The time that the target stays in the electrode area continuously becomes 1. The second reason is that t parts of the 1H standard surface are continuously Perform sputtering # ά 'Λ 1 ί! The time T of the continuous sputtering etching treatment is described above, which is more than 1 second. It is =: 成方 L: It is based on the foregoing invention, ... ": 本The invention of the sputtered film is formed in the direction of the two sides of a certain plate, and the magnetron magnetic circuit disposed on the so-called back surface facing the if stem is shaken, so as to facilitate sputtering and forming a film on the substrate ^ ^ r Processing, wherein the method for forming a sputtered film according to the present invention is to shake a magnetron magnetic circuit to Easy to magnetize based on magnetron

89107738.ptd Page 12 524872 V. Description of the invention (9) Circuit, on the surface of the target, the plasma area with sputtering ability is manufactured, and in the plasma area with sputtering ability, When passing through various parts of the surface of the leather, the method of making each part of the target surface stay in the plasma area for more than 1 second. # In the conventional prior art film forming device of the swing type magnetron magnetic circuit, it is preferred to the low film thickness unevenness of the nodule machine, and the material is preferred for the purpose of control = The rocking action of the circuit, therefore, is set to control the magnetron's magnetic circuit action 'so as to be able to perform the magnetron magnetization' at the highest possible speed (for example, about 0.26 seconds when shaking) ,,,, Phase = shake with conventional prior art = road problem, therefore, it can be set to 、, two ball (n0dule): to facilitate the so-called film thickness is not: moving Asia and 'shopping can solve the ball ( nodule) positive σ results, in the conventional prior art towels, when the magnetron is magnetic, the phenomenon appears, therefore, there is no existence; the motion of the nodule magnetic circuit's shaking action Conception: = Into: The most suitable person H who solved the nodule problem with the magnetron, and found the so-called moving speed. Tian Zhi's Shake of the Magnetic Circuit [Implementation Mode of the Invention] The following is based on The accompanying drawings are appropriate for the invention The implementation form 89107738.ptd Page 13 V. Description of the invention (10) State 'is explained. It is a pattern for the silk maker to show the arrangement of each △ dagger membrane of the present invention; from the top _ Shuang \ The in-line sputtering system for forming evil is used to show the in-line type sputtering deposition film. This is to explain the internal structure of the ore-depositing film-forming device. The month of the description is added with the same component number. "The same elements are attached with:" Zhongzhong "is divided by the gate valve 4 ° 2, 4 0 3, and the use of ^ is constituted as a loading device Locking room m, = using room ;. : Load = chamber 3, in order to arrange m ^ 焱 plating film to 200 and unload lock chamber 300 in series. Magnetron cathodes 2a to 2d are arranged on the two side walls (upper and lower wall portions in Fig. I) of two sides sputtered to = 20. This is not shown in the figure ^ ^ for the load lock chamber 100 and the unload lock chamber 300, the exhaust gas is treated by the inlet, and the cryopump is also used. At 5a and 5d, the sputtering film forming chamber 200 was subjected to an exhaust treatment. In the sputtering film formation to 2000, a disc transfer mechanism not shown in the figure is started from the left side in FIG. 1 to the right, so that the installation is continuously carried in the example ^ = For example, a total of four substrates 42 are mounted on the two sets of disks 41. When the substrate 42 'is transported, the substrate 42' is subjected to a sputtering film-forming process through the corresponding magnetron cathodes 2a to 2d. In addition, the component number 400 is an inlet valve for carrying in the substrate 42, and the component number 400 is an outlet valve for carrying out the substrate 42. The arrow 405 indicates the direction of the substrate. 2 is the downside of the magnetron cathodes 2a ~ 2d in the sputtering film-forming device of FIG.

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Page 524872

524872 V. Description of the invention (12) The magnetron 24 of the magnetron and the central magnetic clock 4 m. In it24 ”, iron is formed in the aforementioned space, and Denso 7 is formed: the component number 7A in the shape of the fruit magnet is shaped as shown in FIG. 3, and it is known to 7 people. If the spirit line section η, the lower straight section 72, and the left and right sides are curved when viewed in further segmentation, and the constant shape pattern is' as described later, each straight section "is: perpendicular to the magnetron The direction in which the magnetic circuit 24 is shaken, and the various parts on the surface of the standard bar 20, gray meaning, sub ===: each of the linear portions 71 and 72 described above are taken seriously as ground. In addition, I etch only a% area, and the difference is as follows: Bree: Piece 28 is used to apply a DC electric field to the target 20 source. Moreover, the component number 29 'is a mechanism for introducing gas.: ::: In the application mechanism 29, the component number is 291, which is oriented toward the base plating.

As: Open the two-shaped gas introduction nozzle ', and the gas introduction ^ is 291, which passes through the mass flow controllers 292 and 293, respectively, and becomes a high-pressure gas cylinder of argon (argon) that is used as a source of reducing gas. 2: The oxygen high-pressure gas cylinder which becomes the source of the reactive gas should also be used as the sputtering gas krypton (argon) and oxygen, leading to the base film chamber 200. Shoubazhu, base plating f sputtering chamber 200, through the conductivity valve (not shown) = Γ f has a low-temperature type cryopump, so that it can be adjusted by the adjuster. The flow rate and the opening of the conductance valve are introduced, and the ore-spattering film is adjusted 89107738.ptd Page 16 524872 V. Description of the invention (13) The pressure of the magnetron 24 in the chamber 200 is shaken. twenty four. With the plasma 7 above, it is also generated on the surface of the target 20 by the pole support. For the target surface / Λ1; ·? /, ㈣ in order to / etch processing. Under the repeated and discontinuous splash shovel like the front 沭 and 耆 control the motor 2 = 1 ', the control circuit ⑺: The circuit 272 shakes the magnetron: sex, it,:'. That is to say, for control purposes, Denso 7bis is moved, and at the surface of the target, it passes through various areas on the surface of the target 20 continuously. When the encroachment implementation area 20 formed by the straight portion 7 ^ straight portion 71 is formed by the encroachment implementation area 20, the formation of 4® (plasma) t is continuous. Staying in this erosion implementation ': The control of the above-mentioned shot target is controlled by the control circuit 272, where _ is more than 1 second. The dwell time and operating speed of each part on ^ Λ become μ · 1 σ Nuo 矹, which is the time τ for controlling the magnetron magnetic circuit 24's mining time, == state, in order to make the aforementioned continuous The formed erosion sinus # r is even if it is located τ with respect to the straight portion 72. In addition, the relevant domains can also apply the condition of the remaining time of continuous ore extinction, and subject to the upper limit of time described by Λ, because other systems refer to Figure 4 ~ ϋ, but they must be kept for at least 1 second. Time. —One ^ Lb, and in the sputtering film-forming device of this embodiment 89107738.ptd Page 17 V. Description of the invention (14) = Rita where nodule is formed on the surface of the target 20 ' Explained. Perch ^ is a diagram showing the state where the surface of 20 has been treated with splash 1 in order to show the target in t1. The electric opening 20a, which is directly above, is shown in Fig. 6, as shown in Fig. 6, except for the engraved portion m ^, and the non-eroded portion around the eroded portion 20a is shown in Fig. 4 No, the particles 81 for re-adhesion are deposited. In the two shown in FIG. 4, the water system shows a cross section of the above-mentioned erosion implementation area in a straight line. The section of the invasion application area is formed. Each of the foregoing two is electro-water. The ground is provided with a length w in the so-called shaking direction. Next, in FIG. 5, the state of the surface of the target 2 0 at time t 2 has been subjected to sputtering etching treatment. The paste 7 is used so that the portion 92 that becomes a non-eroded portion at time t1 becomes a so-called etched portion subjected to sputtering etching. The portion 91 is a portion corresponding to the etched portion at 11:00. Because the rocking speed of the magnetron magnetic circuit is a low speed state as described above, therefore, immediately above the portion 92 that should become the non-invading portion at time 11 o'clock, I have been jealous for a sufficient time. And the plasma 7 (the encroachment implementation area formed by the linear portion 72) is continuously moved. As a result, as described above, each point of the front part 9 2 is continuously retained in the plasma 7 Middle 丨 seconds ^ a, so, for the time 11 o'clock All of the reattachment particles 81 are subjected to a sputter etching process in order to excavate the surface of the target 20 as shown in FIG. 5. When the process like the above is repeatedly performed, the "on the label" When the surface of 20 was subjected to a long-time ore-sputter etching process,

89107738.ptd 524872

524872 V. Description of the invention (16) ^^ is for supply: it does not show the utilization efficiency of Biegeba 2 0, which is the time-dependent pattern of Biegeba 2 0 Ting Niang's processing. In the target 20 chain, the efficiency of the sputtering deposition film forming device of 0.26 seconds is 35%. In contrast, the time of the f: plating: engraving process in the target is more than the conventional i second. The sputtering film 7 ′ on the surface of the standard 20 does not form no ues. Therefore, the system can achieve the utilization efficiency of 45% of the target target. The dependence of the amount of input power on the film formation speed is shown as # ^^. The characteristic 51 shown in FIG. 10 is the dependency of the amount of input power on the film-forming speed in the aforementioned operation of performing the core operation. From the figure, it is clear that y, if the action of the foregoing embodiment is used, no spheres (nodu 1 e) that are the cause of the decrease in film-forming speed are formed. Until the amount of power input was 300 W · hr / cm2, the film-forming speed did not decrease at all. Fig. 11 is a graph showing the dependency of the amount of input power on the number of electric isolations. The characteristic 53 shown by "0" in Fig. 11 is the dependence of the amount of electric power inputted on the number of arcs in the operation of the aforementioned implementation form. From Fig. 11 ', it can be clearly understood that if the operation of the aforementioned embodiment is used, the system does not form the nodule which is the cause of the arc. Therefore, until the amount of electric power input becomes Up to 300w · hr / cm2, no arc was generated at all. In addition, in the device of the present invention, the absolute value of the speed of the magnetron magnetic circuit 24 with respect to the substrate transfer speed becomes a certain value or less.

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Page 20 524872 V. Description of the invention (17) ----- When it is attached to the substrate 42 and along the substrate conveying direction, unevenness with the film quality may occur. However, it is possible to eliminate the non-uniformity of the film thickness and film quality as previously disclosed by the technique disclosed by No. 2 Takahei No. 10-6-6178. In addition, although the sputtering film-forming device and the base film-forming device of the foregoing embodiments are used, the present invention can also be applied to the sputtering film-forming device of Yamoto, such as the blade of the tooth Type sputtering shovel into amine-like plate to form the sputtering film

Ii plating and film deposition and batch-type sputtering filming devices are used in this document to carry out 4 methods, in addition to the above-mentioned ITO amine / film (such as the electrical film) The 'system' can also be transparent with Γ0 (indium-tin-oxygen) system and nodules (n〇duie u: you: the reason for the use of particles (ZnO), the same as the emulsified indium (In2〇3) Although the oxidant is lacking in fire and germanium antimony tellurium (GeSbTe), etc. _Electricity: Reality:? State: It is assumed that in the state of plasma generation, if the indicator; surface = = electricity or intermittent discharge can also be Exercising the condition of time τ is the fruit of [invention]. Ming = 上 ίί: 控;: = When it is clear that if you use this hair, the speed of sexual movement in the standard. Becomes a low-speed phenomenon, and the brake field s forming a nodule with a good shot target will not change over time, and its film-forming speed is sufficient to meet the so-called no Due to electricity 89107738.ptd Page 21 524872 V. Description of the invention (18) The appearance damage of the substrate caused by the occurrence of the arc and the attachment on the substrate The ITO film (In-Sn-0 (In-Sn-O) transparent conductive film) has the effect of deteriorating the film quality. In addition, the so-called nodu 1 e Therefore, it can improve the operating utilization rate of the device, and also improve its production efficiency. [Explanation of the component number] T: the time required for sputtering 11: time 12: time v: the magnetron magnetic circuit Shaking speed w: length 2a in the shaking direction of the erosion area 2 magnetron 2b: magnetron 2c: magnetron 2d: magnetron 5a: low temperature type 5b: low temperature type 5c: low temperature type 5d: low temperature type 6 ： Magnetic field line 7 ： Plasma 7A: Invasion IK 20 •• Target 2 0 a: Invasion department cryopump cryopump cryopump cryopump

89107738.ptd Page 22 524872 V. Description of the invention (19) 21: Inner plate 22 • • Cathode body 23: Teflon plate 24: Magnetron permanent magnet) 24a 24b 25 26 27 28 29 41 42 51 53 54 71 72 73 81 82 83 91 92: Center magnet: Peripheral magnet Crank rod Disc Disk DC power supply gas plate mechanism Characteristics of the disc characteristics Upper linear part Lower linear part Excavation

89107738.ptd Page 23 524872 V. Description of the invention (20) 100 Load lock chamber 200 Sputtered film chamber 201 Wall 241 Arrow (amplitude) 271 Motor 272 Control circuit 291 Gas introduction nozzle 292 Mass flow controller 293 Mass flow controller 294 Ar (argon) gas cylinder 295 〇2 (. 氡) South pressure gas cylinder 300 Unlocking chamber 401 Inlet valve 402 Gate valve 403 Gate valve 404 Out π valve 405 Substrate transfer direction

89107738.ptd Page 24 524872 Brief description of drawings Figure 1 is a top view of a sputtering film-forming device according to an embodiment of the present invention. Fig. 2 is a schematic plan view for explaining the structure of a magnetron cathode. FIG. 3 is a plan view showing the overall shape of the rice paddle implemented by the plasma. D〇 FIG. 4 is a diagram for showing the first state of the standard bar in the cathode of the magnetron after being processed for a long time. &

Fig. 5 is a diagram showing the second state of the standard magnet in the cathode of the magnetron after the coin plating is processed. X Figure 6 is a cross-sectional view of the standard leather bar that was processed by the performer for a long time. Fig. 7 is a diagram showing the position dependence of the shaking speed of the magnetron magnetic circuit. Fig. 8 is a diagram for showing the relationship between the continuous time of cheap money plating and the utilization efficiency of standard leather. Fig. 9 is a diagram showing the position dependence of the shaking speed of a magnetron magnetic circuit in a conventional prior art sputtering film forming apparatus. Fig. 10 is a diagram showing the relationship between the amount of electric power input and the film forming speed. Β Figure 11 is a graph showing the relationship between the amount of electric power input and the number of arcs. Fig. 12 is a view showing the first state of the target in the known prior art magnetron cathode subjected to sputtering etching. Fig. 13 is a diagram showing the second state of the target in the known prior art magnetron cathode subjected to sputtering etching.

89107738.ptd Page 25 524872 Brief description of the drawings Figure 14 is a cross-sectional view showing the pellets (η 〇 d u 1 e) formed in a conventional prior art magnetron cathode. ilii 89107738.ptd Page 26

Claims (1)

52 52 9ί, 5 · ί3 correction yju 5 · Amendment 1 · A sputtering film-forming device provided with a target (20) arranged opposite to a substrate (42) existing in a sputtering chamber (200); and (2 0) on the back of the magnetron magnetic circuit (2 4), the device to; small along a direction, while shaking the aforementioned magnetron magnetic circuit (24), so that = W described substrate (4 2) The surface is subjected to sputtering and film-forming treatment, which is characterized by: equipped with a control mechanism that controls the aforementioned magnetron magnetic circuit (the d'J: based on the aforementioned magnetron magnetic circuit (24), and in the aforementioned = , On the surface of (20), a plasma region with a sputtering capability is manufactured, 钿 ⑴ ′, when the plasma region with a sputtering capability passes through each part of the adjacent mark, the foregoing mark is made. Each of the 4 bits on the surface of the target (20) stays in the plasma area for more than one second in a row; 门 = the formation method, which is at least along ... f becomes the magnetron management on the back of the target facing the substrate, and its features are more on the surface of the aforementioned substrate The electric deactivation at the ore-depositing film formation: = f circuit to facilitate the magnetic and electrical destruction of the magnetron according to the aforementioned :: the surface of the target · ^ 'produce the aforementioned 具备 * 2 # with plating ability, and The plasma area with the sputtering capability passes through the position; at each location, each part of the standard surface is kept far from the plasma area for more than 1 second. Page 27