TW523910B - Method to form at least two memory-cells of a semiconductor memory - Google Patents
Method to form at least two memory-cells of a semiconductor memory Download PDFInfo
- Publication number
- TW523910B TW523910B TW089118682A TW89118682A TW523910B TW 523910 B TW523910 B TW 523910B TW 089118682 A TW089118682 A TW 089118682A TW 89118682 A TW89118682 A TW 89118682A TW 523910 B TW523910 B TW 523910B
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- isolation
- trenches
- dielectric
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000002955 isolation Methods 0.000 claims description 117
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 68
- 239000003990 capacitor Substances 0.000 description 24
- 239000000945 filler Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 11
- 239000000126 substance Substances 0.000 description 9
- 230000002079 cooperative effect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100518501 Mus musculus Spp1 gene Proteins 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RKOQXLNCVUMHFI-UHFFFAOYSA-N [Hf].[Ba] Chemical compound [Hf].[Ba] RKOQXLNCVUMHFI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19944011A DE19944011B4 (de) | 1999-09-14 | 1999-09-14 | Verfahren zur Bildung mindestens zweier Speicherzellen eines Halbleiterspeichers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW523910B true TW523910B (en) | 2003-03-11 |
Family
ID=7921984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089118682A TW523910B (en) | 1999-09-14 | 2000-09-13 | Method to form at least two memory-cells of a semiconductor memory |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE19944011B4 (fr) |
| TW (1) | TW523910B (fr) |
| WO (1) | WO2001020643A2 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6551874B2 (en) * | 2001-06-22 | 2003-04-22 | Infineon Technologies, Ag | Self-aligned STI process using nitride hard mask |
| US6818534B2 (en) * | 2002-08-19 | 2004-11-16 | Infineon Technologies Richmond, Lp | DRAM having improved leakage performance and method for making same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4801988A (en) * | 1986-10-31 | 1989-01-31 | International Business Machines Corporation | Semiconductor trench capacitor cell with merged isolation and node trench construction |
| KR930003857B1 (ko) * | 1987-08-05 | 1993-05-14 | 마쯔시다덴기산교 가부시기가이샤 | 플라즈마 도우핑방법 |
| US5250829A (en) * | 1992-01-09 | 1993-10-05 | International Business Machines Corporation | Double well substrate plate trench DRAM cell array |
| US5895255A (en) * | 1994-11-30 | 1999-04-20 | Kabushiki Kaisha Toshiba | Shallow trench isolation formation with deep trench cap |
| US5543348A (en) * | 1995-03-29 | 1996-08-06 | Kabushiki Kaisha Toshiba | Controlled recrystallization of buried strap in a semiconductor memory device |
| US5643823A (en) * | 1995-09-21 | 1997-07-01 | Siemens Aktiengesellschaft | Application of thin crystalline Si3 N4 liners in shallow trench isolation (STI) structures |
| US5905279A (en) * | 1996-04-09 | 1999-05-18 | Kabushiki Kaisha Toshiba | Low resistant trench fill for a semiconductor device |
| US5937296A (en) * | 1996-12-20 | 1999-08-10 | Siemens Aktiengesellschaft | Memory cell that includes a vertical transistor and a trench capacitor |
| US5867420A (en) * | 1997-06-11 | 1999-02-02 | Siemens Aktiengesellschaft | Reducing oxidation stress in the fabrication of devices |
| US5831301A (en) * | 1998-01-28 | 1998-11-03 | International Business Machines Corp. | Trench storage dram cell including a step transfer device |
| US6762447B1 (en) * | 1999-02-05 | 2004-07-13 | Infineon Technologies North America Corp. | Field-shield-trench isolation for gigabit DRAMs |
| US6184107B1 (en) * | 1999-03-17 | 2001-02-06 | International Business Machines Corp. | Capacitor trench-top dielectric for self-aligned device isolation |
-
1999
- 1999-09-14 DE DE19944011A patent/DE19944011B4/de not_active Expired - Fee Related
-
2000
- 2000-09-11 WO PCT/DE2000/003154 patent/WO2001020643A2/fr active Application Filing
- 2000-09-13 TW TW089118682A patent/TW523910B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001020643A3 (fr) | 2001-10-04 |
| WO2001020643A2 (fr) | 2001-03-22 |
| DE19944011A1 (de) | 2001-03-22 |
| DE19944011B4 (de) | 2007-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW441032B (en) | Production-method for a trench-capacitor with an isolation-collar | |
| US6410391B1 (en) | Method for producing an EEPROM memory cell with a trench capacitor | |
| TW454341B (en) | A trench capacitor with isolation collar | |
| TW459386B (en) | Memory with trench-capacitor and selection-transistor and its production method | |
| TW513801B (en) | Semiconductor-memory-cell arrangement and its production method | |
| US6509599B1 (en) | Trench capacitor with insulation collar and method for producing the trench capacitor | |
| US6537870B1 (en) | Method of forming an integrated circuit comprising a self aligned trench | |
| US4650544A (en) | Shallow groove capacitor fabrication method | |
| TW448564B (en) | A trench capacitor with isolation collar and corresponding manufacturing method | |
| TW492187B (en) | Trench-capacitor with capacitor-electrodes and its production method | |
| EP0703625A2 (fr) | Procédé de DRAM à sillon profond sur SOI pour cellule DRAM à faible courant | |
| TW486787B (en) | Self-limiting polysilicon buffered LOCOS for DRAM cell | |
| US6787838B1 (en) | Trench capacitor DRAM cell using buried oxide as array top oxide | |
| US6828191B1 (en) | Trench capacitor with an insulation collar and method for producing a trench capacitor | |
| US6349052B1 (en) | DRAM cell arrangement and method for fabricating it | |
| TW531884B (en) | Memory-cell with trench and its production method | |
| JP2003031686A (ja) | 半導体記憶装置およびその製造方法 | |
| TW518751B (en) | Semiconductor-memory-cells with trench-capacitors and selection-transistors and its production method | |
| US6319787B1 (en) | Method for forming a high surface area trench capacitor | |
| TW434885B (en) | Trench-capacitor with isolation-collar and its corresponding manufacturing method | |
| KR20010089382A (ko) | Ｄｒａｍ 셀 장치의 제조 방법 | |
| JP2000049303A (ja) | 積層キャパシタの製造方法 | |
| TWI235480B (en) | Trench-capacitor with an insulation-collar and method to produce such a trench-capacitor | |
| TW523910B (en) | Method to form at least two memory-cells of a semiconductor memory | |
| US6417063B1 (en) | Folded deep trench capacitor and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |